WO2015087005A1 - Procédé permettant la création de structures nanométriques par l'auto-assemblage de copolymères a blocs - Google Patents
Procédé permettant la création de structures nanométriques par l'auto-assemblage de copolymères a blocs Download PDFInfo
- Publication number
- WO2015087005A1 WO2015087005A1 PCT/FR2014/053279 FR2014053279W WO2015087005A1 WO 2015087005 A1 WO2015087005 A1 WO 2015087005A1 FR 2014053279 W FR2014053279 W FR 2014053279W WO 2015087005 A1 WO2015087005 A1 WO 2015087005A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- block copolymer
- block
- copolymer
- assembly
- self
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00428—Etch mask forming processes not provided for in groups B81C1/00396 - B81C1/0042
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Definitions
- the invention relates to a method for the creation of nanometric structures by self - assembly of block copolymers, at least one of which blocks is crystallizable or has at least one liquid crystal phase.
- the invention also relates to the use of these materials in the fields of lithography (lithography masks), the storage of information but also the production of porous membranes or as a catalyst support.
- the invention also relates to the block copolymer masks obtained according to the method of the invention.
- Block copolymers it is possible to structure the arrangement of the constituent blocks of the copolymers, by phase segregation between the blocks thus forming nano-domains, at scales of less than 50 nm. Because of this ability to nano-structure, the use of Block copolymers in the fields of electronics or optoelectronics are now well known.
- block copolymer films in particular based on polystyrene-poly (methyl methacrylate), noted hereinafter PS-b-PMMA, appear as very promising solutions because they allow you to create patterns with high resolution.
- a block of the copolymer film In order to be able to use such a block copolymer film as an etching mask, a block of the copolymer must be selectively removed to create a porous film of the residual block, the patterns of which can be subsequently transferred by etching to an underlying layer.
- the minority block that is, PMMA (Poly (methyl methacrylate)
- PS Polystyrene
- the nano-domains must be oriented perpendicular to the surface of the underlying layer.
- Such structuring of the domains requires special conditions such as the preparation of the surface of the underlying layer, but also the composition of the block copolymer.
- the ratios between the blocks make it possible to control the shape of the nano-domains and the molecular mass of each block makes it possible to control the dimension of the blocks.
- Another very important factor is the phase segregation factor, also referred to as the Flory-Huggins interaction parameter and denoted "X".
- This parameter makes it possible to control the size of the nano domains. More particularly, it defines the tendency of blocks of the block copolymer to separate into nano-domains.
- the product ⁇ of the degree of polymerization, N, and the Flory-Huggins parameter ⁇ gives an indication of the compatibility of two blocks and if they can separate. For example, a di-block copolymer of symmetrical composition separates into micro-domains if the product ⁇ is greater than 10. If this product ⁇ is less than 10, the blocks mix and the phase separation is not observed.
- US Patents 8304493 and US 8450418 describe a process for modifying block copolymers as well as modified block copolymers. These modified block copolymers have a value of the modified Flory-Huggins interaction parameter, such that the block copolymer has nano-domains of small sizes.
- a block copolymer of which at least one of the blocks is crystallizable or having at least one liquid crystal phase, has the following advantages when it is deposited on a surface:
- a rapid self-assembly kinetics (between 1 and 20 minutes) for low molecular weights leading to domain sizes well below 10 nm, and at low temperatures (between 333 and 603 K and preferably between 373K and 603K).
- the invention relates to a nano - structured assembly process using a composition comprising a block copolymer of which at least one of the blocks is crystallizable or has at least one liquid crystal phase and comprising the following steps: - Solution of the block copolymer in a solvent. -Deposit of this solution on a surface.
- surface is meant a surface that can be flat or non-planar.
- annealing is meant a step of heating at a certain temperature for one evaporation of the solvent when it is present, and allowing the establishment of the nanostructuring searched in a given time ( ⁇ self assembly). Annealing also means the establishment of nano-structuring of the block copolymer film when said film is subjected to a controlled atmosphere of solvent vapors (s), these vapors giving the polymer chains sufficient mobility for s' arrange by themselves on the surface.
- solvent vapors solvent vapors
- Any block copolymer may be used in the context of the invention, be it diblock copolymer, linear or star triblock, linear multiblock, comb or as a star, provided that at least blocks of the block copolymer is crystallizable or has at least one liquid crystal phase.
- these are diblock or triblock copolymers, and more preferably diblock copolymers.
- copolymers may be synthesized by any techniques known to those skilled in the art among which polycondensation, ring-opening polymerization, anionic, cationic or radical polymerization may be mentioned, these techniques being able to be controlled or not.
- radical polymerization they may be controlled by any known technique such as NMP ("Nitroxide Mediated Polymerization"), RAFT ("Reversible Addition and Fragmentation Transfer”), ATRP ("Atom Transfer Radical Polymerization") , INIFERTER ("Initiator-Transfer-Termination”), RITP ("Reverse Iodine Transfer Polymerization"), ITP (“Iodine Transfer Polymerization”).
- crystallizable block or having at least one liquid crystal phase is meant a block having at least one measurable transition temperature by differential enthalpic analysis, whether it be a crystal-> smectic, smectic-> nematic, nematic-
- the block copolymer having a liquid crystal block may be a block copolymer having a lyotropic or thermotropic block.
- the block copolymer having a crystallizable block may be block copolymer having a crystalline or semi-crystalline block.
- the crystallizable blocks or having at least one liquid crystal phase may be of any type but preferably they will be chosen such that the Flory-Huggins parameter ⁇ of the block copolymer is between 0.01 and 100 and preferably between 0.04 and 25.
- the blocks which are not crystallizable or do not exhibit a liquid crystal phase consist of the following monomers: at least one vinyl, vinylidene, diene, olefinic, allylic or (meth) acrylic or cyclic monomer.
- These monomers are chosen more particularly from vinylaromatic monomers such as styrene or substituted styrenes, in particular alpha-methylstyrene, and acrylic monomers such as alkyl, cycloalkyl or aryl acrylates, such as methyl acrylate, dicyclohexyl acrylate and the like. ethyl, butyl, ethylhexyl or phenyl, ether alkyl acrylates such as 2-methoxyethyl acrylate, alkoxy- or aryloxypolyalkyleneglycol acrylates such as methoxypolyethylene glycol acrylates, ethoxypolyethylene glycol acrylates and the like.
- vinylaromatic monomers such as styrene or substituted styrenes, in particular alpha-methylstyrene
- acrylic monomers such as alkyl, cycloalkyl or aryl acrylates, such as methyl
- methoxypolypropylene glycol acrylates methoxypolyethylene glycol-polypropylene glycol acrylates or mixtures thereof, aminoalkyl acrylates such as 2- (dimethylamino) ethyl acrylate (ADAME), fluorinated acrylates, phosphorus acrylates such as alkylene glycol phosphate acrylates, glycidyl acrylates, dicyclopentenyloxyethyl acrylates, alkyl, cycloalkyl, alkenyl or aryl methacrylates such as methyl methacrylate (MMA), lauryl, cyclohexyl, allyl, phenyl or naphthyl, ether alkyl methacrylates such as 2-ethoxyethyl methacrylate, alkoxy- or aryloxy-polyalkylene glycol methacrylates such as methoxypolyethylene glycol methacrylates, ethoxypolyethylene glycol methacrylates
- acrylamide or substituted acrylamides 4-acryloylmorpholine, N-methylolacrylamide, methacrylamide or substituted methacrylamides, N-methylolmethacrylamide, methacrylamido-propyltrimethyl ammonium chloride (MAPTAC), glycidyl, dicyclopentenyloxyethyl methacrylates, anhydride maleic, alkyl or alkoxy- or aryloxy-polyalkylene glycol maleates or hemimaleate, vinylpyridine, vinylpyrrolidinone, (alkoxy) poly (alkylene glycol) vinyl ether or divinyl ether, such as methoxy poly (ethylene glycol) vinyl ether, poly (ethylene glycol) divinyl ether, olefinic monomers, among which mention may be made of ethylene, butene, hexene and 1-octene, diene monomers including butadiene, isoprene and fluorinated olefinic monomers
- the block copolymer is synthesized, it is dissolved in a suitable solvent and then deposited on a surface according to techniques known to those skilled in the art such as the so-called “spin coating” technique, “Doctor Blade””knifesystem”,”Slot die System” but any other technique can be used such as a dry deposit, that is to say without going through a prior dissolution.
- a surface include silicon, silicon having a native or thermal oxide layer, hydrogenated or halogenated silicon, germanium, hydrogenated or halogenated germanium, platinum and platinum oxide, tungsten and oxides, gold, titanium nitrides, graphenes.
- the surface is mineral and more preferably silicon. Even more preferably, the surface is silicon having a native or thermal oxide layer.
- the orientation of the block copolymer is defined by the thickness of the deposited block copolymer film. It is obtained in relatively short times, between 1 and 20 minutes inclusive and preferably between 1 and 5 minutes and at temperatures between 333 and 603 K and preferably between 373K and 603 K and still more preferably between 373 and 403 K.
- the method of the invention is advantageously applicable to the field of nano-lithography using block copolymer masks, or more generally in the field of nanostructuring of surfaces for electronics.
- the process of the invention also allows the manufacture of porous membranes or catalyst supports for which one of the domains of the block copolymer is degraded to obtain a porous structure.
- a first block is prepared according to a protocol described by Yamaoka et al., Macromolecules, 1995, 28, 7029-7031.
- the next block is constructed in the same way by sequentially adding the MMA, with a 1,1-diphenyl ethylene addition step to allow control of the reactivity of the active center.
- lithium chloride 85 mg
- 20 ml of THF 20 ml of heptane
- the solution is cooled to -50 ° C.
- 0.00025 moles of sec-BuLi are then introduced, followed by addition of 0.01 moles of 1,1-dimethylsilacyclobutane.
- the reaction mixture is stirred for 1 h and then 0.2 ml of 1,1-diphenyl ethylene is added.
- the molecular weights and dispersions corresponding to the ratio between weight-average molecular weight (Mw) and number-average molecular weight (Mn), are obtained by SEC (Size exclusion Chromatography), using 2 columns in series AGILENT 3ym ResiPore, in stabilized THF medium to BHT at a flow rate of 1 mL / min at 40 ° C with concentrated samples at 1 g / L, with prior calibration with calibrated polystyrene samples using a prepared Easical PS-2 pack.
- the films of Examples 1 and 2 were prepared by spin coating from 1.5% by weight solution in toluene and the thickness of the film was controlled by varying the spin-coating speed (1500 to 3000). rpm, typically less than 100 nm
- the promotion of the self-assembly inherent to the phase segregation between the blocks of the copolymer was obtained by short annealing (5 min) on a hot plate at 453 K. While the copolymer of Example 1 has a clearly visible phase transition by DSC ( Figure 1), the copolymer of Example 2 shows no transition, behaving amorphously ( Figure 2).
- the copolymer 1 shows a self assembly visible in Figure 3, while the copolymer 2 has no self ⁇ assembly (Figure 4).
- FIG. 1 is a DSC of the copolymer 1 during a heating-cooling-heating cycle under nitrogen at 10 ° C./min. The data presented represents cooling and the second heating.
- Figure 2 is a DSC of copolymer 2 during a heating-cooling-heating cycle under nitrogen at 10 ° C / min. The data presented represents cooling and the second heating.
- FIG. 3 is a photograph taken under AFM microscopy of a thin film self-assembly with a thickness less than 100 nm of the block copolymer of Example 1 having cylinders oriented perpendicularly to the substrate. Scale 100 nm.
- FIG. 4 is a photograph taken under AFM microscopy and shows the absence of self-assembly of the copolymer of
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480068285.0A CN105980494A (zh) | 2013-12-13 | 2014-12-11 | 允许通过嵌段共聚物的自组装产生纳米结构体的方法 |
EP14827499.6A EP3080218A1 (fr) | 2013-12-13 | 2014-12-11 | Procédé permettant la création de structures nanométriques par l'auto-assemblage de copolymères a blocs |
US15/103,740 US20160333221A1 (en) | 2013-12-13 | 2014-12-11 | Process that enables the creation of nanometric structures by self-assembly of block copolymers |
SG11201604777YA SG11201604777YA (en) | 2013-12-13 | 2014-12-11 | Method allowing the creation of nanometric structures by self-assembly of block copolymers |
JP2016538584A JP6404353B2 (ja) | 2013-12-13 | 2014-12-11 | ブロックコポリマーの自己組織化によりナノメートル構造体の作製を可能にする方法 |
KR1020167018199A KR101990187B1 (ko) | 2013-12-13 | 2014-12-11 | 블록 공중합체의 자가-어셈블리에 의한 나노계측 구조의 제조를 가능하게 하는 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1362597A FR3014888B1 (fr) | 2013-12-13 | 2013-12-13 | Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres a blocs |
FR13.62597 | 2013-12-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015087005A1 true WO2015087005A1 (fr) | 2015-06-18 |
Family
ID=50828979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2014/053279 WO2015087005A1 (fr) | 2013-12-13 | 2014-12-11 | Procédé permettant la création de structures nanométriques par l'auto-assemblage de copolymères a blocs |
Country Status (9)
Country | Link |
---|---|
US (1) | US20160333221A1 (fr) |
EP (1) | EP3080218A1 (fr) |
JP (1) | JP6404353B2 (fr) |
KR (1) | KR101990187B1 (fr) |
CN (1) | CN105980494A (fr) |
FR (1) | FR3014888B1 (fr) |
SG (1) | SG11201604777YA (fr) |
TW (1) | TWI547519B (fr) |
WO (1) | WO2015087005A1 (fr) |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017501261A (ja) * | 2013-12-06 | 2017-01-12 | エルジー・ケム・リミテッド | ブロック共重合体 |
WO2017068259A1 (fr) * | 2015-10-23 | 2017-04-27 | Arkema France | Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres di-blocs |
US10081698B2 (en) | 2013-12-06 | 2018-09-25 | Lg Chem, Ltd. | Block copolymer |
US10087276B2 (en) | 2013-12-06 | 2018-10-02 | Lg Chem, Ltd. | Block copolymer |
US10150832B2 (en) | 2013-12-06 | 2018-12-11 | Lg Chem, Ltd. | Block copolymer |
US10160822B2 (en) | 2013-12-06 | 2018-12-25 | Lg Chem, Ltd. | Monomer and block copolymer |
US10184021B2 (en) | 2013-12-06 | 2019-01-22 | Lg Chem, Ltd. | Block copolymer |
US10196475B2 (en) | 2013-12-06 | 2019-02-05 | Lg Chem, Ltd. | Block copolymer |
US10202480B2 (en) | 2013-12-06 | 2019-02-12 | Lg Chem, Ltd. | Block copolymer |
US10202481B2 (en) | 2013-12-06 | 2019-02-12 | Lg Chem, Ltd. | Block copolymer |
US10227436B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
US10227437B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
US10227438B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
US10240035B2 (en) | 2014-09-30 | 2019-03-26 | Lg Chem, Ltd. | Block copolymer |
US10239980B2 (en) | 2013-12-06 | 2019-03-26 | Lg Chem, Ltd. | Block copolymer |
US10253130B2 (en) | 2013-12-06 | 2019-04-09 | Lg Chem, Ltd. | Block copolymer |
US10281820B2 (en) | 2014-09-30 | 2019-05-07 | Lg Chem, Ltd. | Block copolymer |
US10287429B2 (en) | 2014-09-30 | 2019-05-14 | Lg Chem, Ltd. | Block copolymer |
US10287430B2 (en) | 2014-09-30 | 2019-05-14 | Lg Chem, Ltd. | Method of manufacturing patterned substrate |
US10295908B2 (en) | 2014-09-30 | 2019-05-21 | Lg Chem, Ltd. | Block copolymer |
US10310378B2 (en) | 2014-09-30 | 2019-06-04 | Lg Chem, Ltd. | Block copolymer |
US10370529B2 (en) | 2014-09-30 | 2019-08-06 | Lg Chem, Ltd. | Method of manufacturing patterned substrate |
US10377894B2 (en) | 2014-09-30 | 2019-08-13 | Lg Chem, Ltd. | Block copolymer |
US10633533B2 (en) | 2014-09-30 | 2020-04-28 | Lg Chem, Ltd. | Block copolymer |
WO2020120916A1 (fr) * | 2018-12-12 | 2020-06-18 | Arkema France | Procede de fabrication d'un copolymere a blocs contenant des ions metalliques |
US10703897B2 (en) | 2014-09-30 | 2020-07-07 | Lg Chem, Ltd. | Block copolymer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030118800A1 (en) * | 2001-05-25 | 2003-06-26 | Thomas Edwin L. | Large area orientation of block copolymer microdomains in thin films |
WO2012144735A2 (fr) * | 2011-04-22 | 2012-10-26 | Lg Chem, Ltd. | Nouveau copolymère diblocs, son procédé de préparation, et procédé de formation d'un nanomotif à l'aide de celui-ci |
US8304493B2 (en) | 2010-08-20 | 2012-11-06 | Micron Technology, Inc. | Methods of forming block copolymers |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3979470B2 (ja) * | 2002-09-11 | 2007-09-19 | 財団法人理工学振興会 | ブロック共重合体、及びミクロ相分離構造膜の製造方法 |
JP3926360B2 (ja) * | 2004-10-13 | 2007-06-06 | 株式会社東芝 | パターン形成方法およびそれを用いた構造体の加工方法 |
JP5313664B2 (ja) * | 2006-04-19 | 2013-10-09 | 独立行政法人科学技術振興機構 | 表面に微小金属塊が整列した基板の製法 |
US7553760B2 (en) * | 2006-10-19 | 2009-06-30 | International Business Machines Corporation | Sub-lithographic nano interconnect structures, and method for forming same |
JP5598970B2 (ja) * | 2010-06-18 | 2014-10-01 | 凸版印刷株式会社 | 微細構造体の製造方法、複合体 |
JP5652092B2 (ja) * | 2010-09-30 | 2015-01-14 | 凸版印刷株式会社 | ブロック共重合体及びそれを用いた太陽電池 |
JP2012236866A (ja) * | 2011-05-09 | 2012-12-06 | Asahi Kasei E-Materials Corp | ブロック共重合体 |
US8939709B2 (en) * | 2011-07-18 | 2015-01-27 | General Electric Company | Clearance control for a turbine |
JP5988258B2 (ja) * | 2011-07-29 | 2016-09-07 | 凸版印刷株式会社 | 微細構造体の製造方法、複合体の製造方法 |
US10253187B2 (en) * | 2011-11-08 | 2019-04-09 | Samsung Electronics Co., Ltd. | Nano-structure of block copolymer and method of manufacturing the same |
US8513356B1 (en) * | 2012-02-10 | 2013-08-20 | Dow Global Technologies Llc | Diblock copolymer blend composition |
CN102627774A (zh) * | 2012-03-26 | 2012-08-08 | 复旦大学 | 一种聚烷基噻吩与聚氧化乙烯的嵌段共聚物及其制备方法 |
-
2013
- 2013-12-13 FR FR1362597A patent/FR3014888B1/fr not_active Expired - Fee Related
-
2014
- 2014-12-11 CN CN201480068285.0A patent/CN105980494A/zh active Pending
- 2014-12-11 JP JP2016538584A patent/JP6404353B2/ja active Active
- 2014-12-11 KR KR1020167018199A patent/KR101990187B1/ko active IP Right Grant
- 2014-12-11 WO PCT/FR2014/053279 patent/WO2015087005A1/fr active Application Filing
- 2014-12-11 EP EP14827499.6A patent/EP3080218A1/fr not_active Withdrawn
- 2014-12-11 US US15/103,740 patent/US20160333221A1/en not_active Abandoned
- 2014-12-11 TW TW103143324A patent/TWI547519B/zh not_active IP Right Cessation
- 2014-12-11 SG SG11201604777YA patent/SG11201604777YA/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030118800A1 (en) * | 2001-05-25 | 2003-06-26 | Thomas Edwin L. | Large area orientation of block copolymer microdomains in thin films |
US8304493B2 (en) | 2010-08-20 | 2012-11-06 | Micron Technology, Inc. | Methods of forming block copolymers |
US8450418B2 (en) | 2010-08-20 | 2013-05-28 | Micron Technology, Inc. | Methods of forming block copolymers, and block copolymer compositions |
WO2012144735A2 (fr) * | 2011-04-22 | 2012-10-26 | Lg Chem, Ltd. | Nouveau copolymère diblocs, son procédé de préparation, et procédé de formation d'un nanomotif à l'aide de celui-ci |
Non-Patent Citations (8)
Title |
---|
H. TAKAHASHI ET AL., MACROMOLECULES, vol. 45, 2012, pages 6253 |
HAIFENG YU ET AL: "Novel Wormlike Nanostructures Self-Assembled in a Well Defined Liquid Crystalline Diblock Copolymer with Azobenzene Moieties", MACROMOLECULAR RAPID COMMUNICATIONS, vol. 28, no. 8, 16 April 2007 (2007-04-16), pages 927 - 931, XP055139505, ISSN: 1022-1336, DOI: 10.1002/marc.200600901 * |
HAIFENG YU ET AL: "Novel Wormlike Nanostructures Self-Assembled in a Well-Defined Liquid- Crystalline Diblock Copolymer with Azobenzene Moieties", SUPPORTING INFORMATION FOR MACROMOL. RAPID COMMUN, vol. 28, 1 January 2007 (2007-01-01), pages 927, XP055139506 * |
M.D. RODWOGIN ET AL., ACS NANO, vol. 4, 2010, pages 725 |
QUOC DAT NGHIEM ET AL: "Direct Preparation of High Surface Area Mesoporous SiC-Based Ceramic by Pyrolysis of a Self-Assembled Polycarbosilane- block -Polystyrene Diblock Copolymer", CHEMISTRY OF MATERIALS, vol. 20, no. 11, 1 June 2008 (2008-06-01), pages 3735 - 3739, XP055138637, ISSN: 0897-4756, DOI: 10.1021/cm702688j * |
S. JI, ACS NANO, vol. 6, 2012, pages 5440 |
Y. ZHAO, MACROMOLECULES, vol. 41, 2008, pages 9948 |
YAMAOKA, MACROMOLECULES, vol. 28, 1995, pages 7029 - 7031 |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10227438B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
US10087276B2 (en) | 2013-12-06 | 2018-10-02 | Lg Chem, Ltd. | Block copolymer |
JP2017501261A (ja) * | 2013-12-06 | 2017-01-12 | エルジー・ケム・リミテッド | ブロック共重合体 |
US10081698B2 (en) | 2013-12-06 | 2018-09-25 | Lg Chem, Ltd. | Block copolymer |
US10253130B2 (en) | 2013-12-06 | 2019-04-09 | Lg Chem, Ltd. | Block copolymer |
US10150832B2 (en) | 2013-12-06 | 2018-12-11 | Lg Chem, Ltd. | Block copolymer |
US10160822B2 (en) | 2013-12-06 | 2018-12-25 | Lg Chem, Ltd. | Monomer and block copolymer |
US10184021B2 (en) | 2013-12-06 | 2019-01-22 | Lg Chem, Ltd. | Block copolymer |
US10196475B2 (en) | 2013-12-06 | 2019-02-05 | Lg Chem, Ltd. | Block copolymer |
US10196474B2 (en) | 2013-12-06 | 2019-02-05 | Lg Chem, Ltd. | Block copolymer |
US10202480B2 (en) | 2013-12-06 | 2019-02-12 | Lg Chem, Ltd. | Block copolymer |
US10239980B2 (en) | 2013-12-06 | 2019-03-26 | Lg Chem, Ltd. | Block copolymer |
US10227436B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
US10227437B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
US10202481B2 (en) | 2013-12-06 | 2019-02-12 | Lg Chem, Ltd. | Block copolymer |
US10310378B2 (en) | 2014-09-30 | 2019-06-04 | Lg Chem, Ltd. | Block copolymer |
US10295908B2 (en) | 2014-09-30 | 2019-05-21 | Lg Chem, Ltd. | Block copolymer |
US10240035B2 (en) | 2014-09-30 | 2019-03-26 | Lg Chem, Ltd. | Block copolymer |
US10281820B2 (en) | 2014-09-30 | 2019-05-07 | Lg Chem, Ltd. | Block copolymer |
US10287429B2 (en) | 2014-09-30 | 2019-05-14 | Lg Chem, Ltd. | Block copolymer |
US10703897B2 (en) | 2014-09-30 | 2020-07-07 | Lg Chem, Ltd. | Block copolymer |
US10370529B2 (en) | 2014-09-30 | 2019-08-06 | Lg Chem, Ltd. | Method of manufacturing patterned substrate |
US10287430B2 (en) | 2014-09-30 | 2019-05-14 | Lg Chem, Ltd. | Method of manufacturing patterned substrate |
US10633533B2 (en) | 2014-09-30 | 2020-04-28 | Lg Chem, Ltd. | Block copolymer |
US10377894B2 (en) | 2014-09-30 | 2019-08-13 | Lg Chem, Ltd. | Block copolymer |
FR3042794A1 (fr) * | 2015-10-23 | 2017-04-28 | Arkema France | Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres di-blocs |
WO2017068259A1 (fr) * | 2015-10-23 | 2017-04-27 | Arkema France | Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres di-blocs |
WO2020120916A1 (fr) * | 2018-12-12 | 2020-06-18 | Arkema France | Procede de fabrication d'un copolymere a blocs contenant des ions metalliques |
FR3089981A1 (fr) * | 2018-12-12 | 2020-06-19 | Arkema France | Procédé de fabrication d’un copolymère à blocs contenant des ions métalliques |
Also Published As
Publication number | Publication date |
---|---|
JP2017503043A (ja) | 2017-01-26 |
TWI547519B (zh) | 2016-09-01 |
JP6404353B2 (ja) | 2018-10-10 |
US20160333221A1 (en) | 2016-11-17 |
KR20160095125A (ko) | 2016-08-10 |
EP3080218A1 (fr) | 2016-10-19 |
TW201538605A (zh) | 2015-10-16 |
CN105980494A (zh) | 2016-09-28 |
FR3014888B1 (fr) | 2017-05-26 |
FR3014888A1 (fr) | 2015-06-19 |
KR101990187B1 (ko) | 2019-06-17 |
SG11201604777YA (en) | 2016-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2015087005A1 (fr) | Procédé permettant la création de structures nanométriques par l'auto-assemblage de copolymères a blocs | |
van Zoelen et al. | Thin films of complexed block copolymers | |
US10011675B2 (en) | Process for the nanostructuring of a block copolymer film using a nonstructured block copolymer based on styrene and on methyl methacrylate, and nanostructured block copolymer film | |
EP3080198A1 (fr) | Procédé de réalisation d'un film de copolymère a blocs sur un substrat. | |
FR3008986A1 (fr) | Procede de controle de la periode caracterisant la morphologie obtenue a partir d'un melange de copolymere a blocs et de (co) polymeres de l'un des blocs | |
FR3010413A1 (fr) | Procede de controle de la periode d'un assemblage nano-structure comprenant un melange de copolymeres a blocs | |
FR3022249A1 (fr) | Procede de controle de la periode d'un film de copolymere a blocs nanostructue a base de styrene et de methacrylate de methyle, et film de copolymere a blocs nanostructure | |
FR3010414A1 (fr) | Procede d'obtention de films epais nano-structures obtenus a partir d'une composition de copolymeres a blocs | |
EP3080217B1 (fr) | Procédé permettant la création de structures nanométriques par l'auto-assemblage de copolymères a blocs | |
WO2015004392A1 (fr) | Procede d'orientation perpendiculaire de nanodomaines de copolymeres a blocs par l'utilisation de copolymeres statistiques ou a gradient dont les monomeres sont au moins en partie differents de ceux presents respectivement dans chacun des blocs du copolymere a blocs | |
FR3010412A1 (fr) | Procede d'obtention de films epais nano-structures obtenus a partir de copolymeres a blocs | |
WO2017068259A1 (fr) | Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres di-blocs | |
EP3105295B1 (fr) | Procede de controle de l'energie de surface d'un substrat | |
EP3191894A1 (fr) | Procede de controle du taux de defauts dans des films obtenus avec des melanges de copolymeres a blocs et de polymeres | |
FR3060008A1 (fr) | Film de copolymere a blocs nanostructure comprenant un bloc amorphe |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14827499 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016538584 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15103740 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
REEP | Request for entry into the european phase |
Ref document number: 2014827499 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2014827499 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20167018199 Country of ref document: KR Kind code of ref document: A |