WO2015063969A1 - キャリアプレート及びワークの両面研磨装置 - Google Patents
キャリアプレート及びワークの両面研磨装置 Download PDFInfo
- Publication number
- WO2015063969A1 WO2015063969A1 PCT/JP2014/002975 JP2014002975W WO2015063969A1 WO 2015063969 A1 WO2015063969 A1 WO 2015063969A1 JP 2014002975 W JP2014002975 W JP 2014002975W WO 2015063969 A1 WO2015063969 A1 WO 2015063969A1
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- WO
- WIPO (PCT)
- Prior art keywords
- carrier plate
- plate
- polishing
- workpiece
- groove
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 110
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000002002 slurry Substances 0.000 description 41
- 235000012431 wafers Nutrition 0.000 description 37
- 230000000052 comparative effect Effects 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67383—Closed carriers characterised by substrate supports
Definitions
- the present invention relates to a carrier plate for holding a workpiece, and a workpiece double-side polishing apparatus equipped with the carrier plate, which is used in a workpiece double-side polishing apparatus.
- This double-side polishing generally uses a double-side polishing machine that has a carrier plate with a hole for holding the workpiece between the upper and lower surface plates, holds the workpiece in the holding hole of this carrier plate, and supplies polishing slurry. While rotating the upper and lower surface plates, the polishing pad affixed to the upper and lower surface plates and the front and back surfaces of the workpiece are slid to simultaneously polish both surfaces of the workpiece.
- the supply amount of the polishing slurry on the upper surface of the carrier plate is not sufficient, the friction between the polishing pad affixed to the upper surface plate and the upper surface of the work contacting the polishing pad increases, and the original mechanochemical is caused by frictional heat. The balance of the action may be lost, the polishing slurry may be heated to a high temperature, and the chemical action may be dominant. In such a case, sagging of the outer periphery of the workpiece may occur.
- the supply amount of the polishing slurry to the center of the workpiece is insufficient, the workpiece after polishing becomes a convex shape, and the desired workpiece shape is obtained. There was a problem that it could not be obtained.
- the polishing product cannot be discharged, and the polishing product accumulates on the polishing pad, and the pores near the surface of the polishing pad (the minute void for holding the polishing slurry).
- the polishing rate of the entire surface of the workpiece may be reduced due to clogging of the holes).
- the quality such as the polishing amount and the surface roughness may be different between the upper and lower surfaces of the workpiece.
- the present invention has been made in view of such problems, a carrier plate for holding a workpiece, used in a double-side polishing apparatus for a workpiece, which can sufficiently supply a polishing slurry to the upper surface of the workpiece, And it aims at providing the double-side polish apparatus provided with this carrier plate.
- the present inventor has intensively studied to solve the above problems.
- the inventor provides a groove extending from the holding hole to the outer periphery of the carrier plate, and introduces the polishing slurry around the carrier plate into the holding hole. It was newly found that it is more effective to increase the residence time of the polishing slurry on the upper surface of the carrier plate.
- the present inventor obtained new knowledge that the intended purpose can be advantageously achieved by providing a groove extending between the edges of the carrier plate defined by the holding hole on the upper surface of the carrier plate. The present invention has been completed.
- a carrier plate for a double-side polishing apparatus for a workpiece has one holding hole for holding a workpiece, and extends at least on the upper surface of the carrier plate between edges of the carrier plate defined by the holding hole. A plurality of main grooves are provided. According to this configuration, the residence time of the polishing slurry on the upper surface of the carrier plate can be lengthened, and the polishing amount of the upper surface of the workpiece can be made sufficient in double-side polishing.
- the “upper surface of the workpiece” means a surface on the side that slides with the polishing pad affixed to the upper surface plate side of the double-side polishing apparatus of the workpiece in double-side polishing, and the other surface. Is the lower surface of the workpiece.
- the plurality of main grooves are preferably provided concentrically. According to this configuration, the main groove can be disposed over the entire upper surface of the carrier plate, and the extension length of one main groove can be increased. It can be retained for a longer time.
- the carrier plate for the double-side polishing apparatus for workpieces of the present invention includes at least one of the main grooves, the main grooves and the outer periphery of the carrier plate, and the main grooves and the edges.
- the sub-groove is provided so as to have a discontinuous portion between the edge portion and the outer periphery of the carrier plate in the radial direction of the carrier plate. According to this configuration, the residence time of the polishing slurry on the upper surface of the carrier plate can be adjusted by the sub-groove.
- the double-side polishing apparatus for a workpiece is provided on a rotating surface plate having an upper surface plate and a lower surface plate, a sun gear provided at the center of the rotating surface plate, and an outer peripheral portion of the rotating surface plate. And an internal gear and the carrier plate provided between the upper surface plate and the lower surface plate. According to this configuration, the residence time of the polishing slurry on the upper surface of the carrier plate can be lengthened, and the polishing amount of the upper surface of the workpiece can be made sufficient in double-side polishing.
- a carrier plate for holding a work and a double-side polishing apparatus provided with the carrier plate, which is used in a work double-side polishing apparatus capable of sufficiently supplying a polishing slurry to the upper surface of the work.
- a work double-side polishing apparatus capable of sufficiently supplying a polishing slurry to the upper surface of the work.
- (A) It is a vertical direction sectional view which shows the double-side polish apparatus of the workpiece
- (B) It is the top view which looked at the double-side polish apparatus of the workpiece
- FIG. 1A is a vertical sectional view showing a double-side polishing apparatus for a workpiece according to an embodiment of the present invention
- FIG. 1B shows the double-side polishing apparatus with the upper surface plate removed. It is the top view seen from right above.
- the double-side polishing apparatus 1 is provided at a central portion of a rotating surface plate 4 having an upper surface plate 2 and a lower surface plate 3 opposite to the upper surface plate 2, and the rotating surface plate 4.
- a sun gear 5 and an internal gear 6 provided in an annular shape on the outer periphery of the rotating surface plate 4 are provided.
- FIG. 1A is a vertical sectional view showing a double-side polishing apparatus for a workpiece according to an embodiment of the present invention
- FIG. 1B shows the double-side polishing apparatus with the upper surface plate removed. It is the top view seen from right above.
- the double-side polishing apparatus 1 is provided at a central portion of a rotating surface plate 4 having an upper surface plate 2 and a lower surface plate 3 opposite to the upper
- the opposing surfaces of the upper and lower rotating surface plates 4, that is, the lower surface side, which is the polishing surface of the upper surface plate 2, and the upper surface side, which is the polishing surface of the lower surface plate 3, respectively. 7 is affixed.
- the apparatus 1 is provided between the upper surface plate 2 and the lower surface plate 3, and has a single holding hole 8 that holds the workpiece W.
- Five carrier plates 9 are provided.
- the apparatus 1 includes five carrier plates 9, but one or more carrier plates 9 may be provided, and the number of carrier plates 9 is not particularly limited.
- a workpiece (wafer in this embodiment) W is held in the hole 8.
- the material of the carrier plate 9 can be, for example, stainless steel, other metals, a resin composite material such as glass epoxy, or a coating of these.
- FIG. 2 is a plan view of one of the carrier plates 9 shown in FIGS. 1A and 1B as viewed from directly above with the upper surface plate removed.
- ten main grooves 10 are provided on at least the upper surface of the carrier plate 9 in a concentric manner in the illustrated example.
- the carrier plate 9 is partitioned into 11 land portions 11 by the main grooves 10 and the holding holes 8 in the illustrated example.
- the main groove 10 extends between the edge portions 12 of the carrier plate 9 defined by the holding holes 8. That is, the start end and the end of each main groove 10 are connected to the edge 12 of the carrier plate 9.
- each main groove 10 does not extend to the outer periphery 13 of the carrier plate 9 but terminates in the carrier plate 9.
- the start and end of each main groove 10 are connected to different positions on the edge 12 of the carrier plate 9, but the start and end of each main groove 10 are connected to the edge 12 of the carrier plate 9. It can also comprise so that it may connect to the same position.
- an inserter made of resin or the like may be attached along the edge 12 in order to protect the peripheral edge of the wafer W from damage caused by contact with the carrier plate.
- the main groove 10 extends between the edge portions 12 of the carrier plate 9 so that the main groove 10 is not formed on the upper surface of the inserter.
- FIG. 3 is a plan view of a carrier plate 9 according to another embodiment.
- the carrier plate 9 shown in FIG. 3 is the same as the carrier plate 9 shown in FIG. 2 with respect to the arrangement of the main grooves 10, except that the sub-grooves 14 are formed as described below. It differs from the carrier plate 9 shown in FIG. That is, as shown in FIG. 3, on the upper surface of the carrier plate 9 of this embodiment, between the main grooves 10, between the main grooves 10 and the outer periphery 13 of the carrier plate 9, and between the main grooves 10 and the edges 12.
- a plurality of sub-grooves 14 are provided to connect each other.
- sub-grooves 14 are provided so as to have a discontinuous portion between the edge 12 and the outer periphery 13 of the carrier plate 9 in the radial direction of the carrier plate 9. That is, the sub-groove 14 is not arranged in a straight line from the edge 12 to the outer periphery 13 of the carrier plate 9 in the radial direction of the carrier plate 9, and in this example, is adjacent to the radial direction of the carrier plate 9.
- the auxiliary grooves 14 provided between the land portions 11 are provided so as to be offset from each other in the circumferential direction of the carrier plate 9.
- a plurality of sub-grooves 14 are provided so as to form five intermittent sub-groove groups 15 that intermittently extend between adjacent land portions 11.
- FIG. 4 is a schematic partial sectional view in the vertical direction of the double-side polishing apparatus 1 according to one embodiment of the present invention.
- the naturally dropped polishing slurry 16 is supplied to the upper surface of the wafer W and the carrier plate 9 through a slurry nozzle 17 provided on the upper surface plate 2.
- a part of the polishing slurry 16 supplied to the upper surface of the carrier plate 9 flows in the main groove 10 provided on the upper surface or the upper surface of the carrier plate 9, and the remaining part of the carrier slurry 9 from between the carrier plates 9 or the like by gravity. Is supplied to the lower surface side.
- the polishing slurry 17 flowing through the main groove 10 provided on the upper surface of the carrier plate 9 is Therefore, it is difficult to be discharged out of the carrier plate 9, so that it can stay in the main groove 10 for a long time, and the main groove 10 functions as a storage groove for the polishing slurry 17. Further, since both the start end and the end of the main groove 10 are connected to the edge portion 12 of the carrier plate 9, the polishing groove is sufficiently applied to the upper surface of the wafer W held by the holding holes 8 that define the edge portion 12. 16 can be supplied.
- the residence time of the polishing slurry 16 on the upper surface of the carrier plate 9 can be increased and the polishing slurry 16 can be sufficiently supplied to the upper surface of the wafer W.
- the polishing amount of the upper surface of the substrate can be made sufficient. Therefore, according to the present invention, the difference in polishing amount and surface roughness between the upper and lower surfaces of the wafer W after double-side polishing can be reduced and the quality can be made equivalent. Further, the polishing product 16 staying on the upper surface of the wafer W for a long time makes it easy to discharge the polishing product.
- FIGS. 2 and 3 it is preferable to provide a plurality of main grooves 10 on at least the upper surface of the carrier plate 9. This is because the amount of polishing slurry 16 that can increase the residence time on the upper surface of the carrier plate 9 can be secured. Further, the dispersibility of the polishing slurry 16 over the entire polishing pad 7 can be improved.
- each main groove 10 is circular (a part thereof), and the center of each main groove 10 is also coincident, but one main groove 10 extending between the edge portions 12.
- the main groove 10 does not necessarily need to be circular, and the centers do not have to coincide with each other.
- the main groove 10 is concentrically arranged and has a shape extending in a curved shape, but the main groove 10 may be entirely or partially linear. You may arrange
- the arrangement, number, groove width, groove depth, etc. of the main grooves 10 are not particularly limited, and may be determined according to the desired residence time of the polishing slurry 16.
- the groove width of the main groove 10 is too narrow, the amount of the polishing slurry 16 to be retained decreases, and if the groove width of the main groove 10 is too wide, the polishing pad 7 sinks. Since the pad 7 and the bottom of the main groove 10 come into contact with each other and there is a risk that accumulated slurry or the like staying in the groove will be scattered on the upper surface of the carrier plate 9, the groove width of the main groove 10 is in the range of 0.5 to 10 mm. It is preferable to arrange.
- the groove depth of the main groove 10 is preferably 10 to 50% of the thickness of the carrier plate 9.
- the sub-groove 14 that connects at least one of the main grooves 10, the main grooves 10 and the outer periphery 13 of the carrier plate 9, and the main grooves 10 and the edge portions 12 is provided.
- the provided and auxiliary groove 14 is preferably provided so as to have a discontinuous portion between the edge 12 and the outer periphery 13 of the carrier plate 9 in the radial direction 9 of the carrier plate.
- the polishing slurry 16 passes through the sub-groove 14. This is because it is easy to be discharged to the outside of the carrier plate 9.
- the secondary groove 14 extends in the radial direction of the carrier plate 9, but the present invention is not limited to this case, and the secondary groove 14 extends in any direction. May be present. Further, the sub-groove 14 can also have a curved shape.
- the arrangement, number, groove width, groove depth and the like of the sub-grooves 14 are not particularly limited, and may be determined according to the desired residence time of the polishing slurry 16.
- the groove width and the groove depth are preferably in the range of 0.5 to 10 mm, and the groove depth is preferably 10 to 50% of the thickness of the carrier plate 9.
- the main groove 10 and the sub-groove 14 are provided only on the upper surface of the carrier plate 9, but the main groove 10 and the sub-groove 14 may be provided also on the lower surface 9 of the carrier plate 9.
- a hole 18 penetrating from the upper surface to the lower surface of the carrier plate 9 can be provided in order to adjust the residence time. Examples of the present invention will be described below, but the present invention is not limited to these examples.
- a wafer was subjected to double-side polishing using the carrier plates according to the following invention examples and comparative examples, and the shape and thickness of the wafer after double-side polishing and the roughness of the front and back surfaces were measured and compared.
- a double-side polishing apparatus having the carrier plate shown in FIG. 3 and having the same configuration as shown in FIG. 1 except for the carrier plate was used.
- the groove width of the main groove and the subgroove was 2 mm
- the groove depth was 200 ⁇ m
- the pitch interval between the main grooves was 10 mm.
- FIGS. 5 and 6 it has a carrier plate provided with six perforations 18 penetrating from the upper surface to the lower surface, and the configuration other than the carrier plate is the same as that shown in FIG.
- a double-side polishing apparatus having the same was used.
- a silicon wafer having a diameter of 300 mm was used as a wafer to be polished.
- the carrier plate was made of stainless steel
- the polishing pad was a urethane pad
- the polishing slurry was an alkali base solution added with colloidal silica. Polishing was performed until the total polishing amount on both sides reached 20 ⁇ m.
- the shape and thickness of the polished silicon wafer were measured using a nano metro manufactured by Kuroda Seiko Co., Ltd., and the surface roughness (Rms) was measured using a Chapman manufactured by Raytex.
- Rms surface roughness
- FIG. 7A is a cross-sectional view showing the wafer shape after polishing according to the comparative example
- FIG. 7B is a cross-sectional view showing the wafer shape after polishing according to the invention example.
- the vertical axis indicates the thickness direction of the wafer.
- the horizontal axis indicates the distance from the wafer center when the wafer center is 0, and the radius of the wafer is R.
- the polished wafer according to the comparative example is insufficient in the polishing amount at the center, and the thickness is not uniform as a whole. It can be seen that the polished wafer according to the above has higher flatness.
- polishing amount difference was defined and evaluated as the amount of polishing on the lower surface of the wafer minus the amount of polishing on the upper surface of the wafer. As shown in Table 1 below, in the polished wafer according to the comparative example, the difference in polishing amount between the upper and lower surfaces of the wafer was large, whereas in the polished wafer according to the inventive example, the polished amount of the upper and lower surfaces of the wafer It can be seen that the difference is small.
- Table 2 shows the measurement results of the surface roughness (Rms) of the upper and lower surfaces of the polished wafer. As shown in Table 2, it can be seen that the surface roughness of the upper surface of the polished wafer according to the invention example is small. Moreover, it turns out that it is the surface roughness equivalent to a comparative example also about a lower surface.
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- Computer Hardware Design (AREA)
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Abstract
Description
さらに、研磨スラリーの供給量が十分でないと、研磨生成物の排出ができずに、該研磨生成物が研磨パッド上に堆積し、研磨パッド表面付近のポア(研磨スラリーを保持するための微小空孔)が目詰まりを起こし、ワーク全面の研磨レートが低下してしまう場合があるという問題もあった。
このように、上定盤への研磨スラリーの供給量が十分でないと、ワークの上下面で研磨量や表面粗さ等の品質が相違するおそれがあった。
そして、本発明者は、キャリアプレートの上面に、保持孔により区画されるキャリアプレートの縁部間を延びる溝を設けることで、所期した目的を有利に達成することができるという新規知見を得て本発明を完成するに至った。
本発明のワークの両面研磨装置用のキャリアプレートは、ワークを保持する1つの保持孔を有し、前記キャリアプレートの少なくとも上面に、前記保持孔により区画される前記キャリアプレートの縁部間を延びる、複数本の主溝を設けたことを特徴とする。
この構成によれば、研磨スラリーの、キャリアプレートの上面での滞留時間を長くして、両面研磨においてワークの上面の研磨量を十分なものとすることができる。
なお、本明細書において、「ワークの上面」とは、両面研磨において、ワークの両面研磨装置の上定盤側に貼布した研磨パッドと摺動する側の面をいうものとし、他方の面をワークの下面というものとする。
この構成によれば、キャリアプレートの上面全面にわたって主溝を配置することができ、また、1本の主溝の延在長さを長くすることができるため、キャリアプレートの上面に研磨スラリーを、より長時間滞留させることができる。
前記副溝は、前記キャリアプレートの径方向において、前記縁部から前記キャリアプレートの外周までの間に途切れた部分を有するように設けてなることが好ましい。
この構成によれば、副溝により、キャリアプレートの上面における研磨スラリーの滞留時間を調整することができる。
この構成によれば、研磨スラリーの、キャリアプレートの上面での滞留時間を長くして、両面研磨においてワークの上面の研磨量を十分なものとすることができる。
図1(a)(b)に示すように、この両面研磨装置1は、上定盤2及びそれに対向する下定盤3を有する回転定盤4と、回転定盤4の中心部に設けられたサンギア5と、回転定盤4の外周部に円環状に設けられたインターナルギア6とを備えている。図1(a)に示すように、上下の回転定盤4の対向面、すなわち、上定盤2の研磨面である下面側及び下定盤3の研磨面である上面側には、それぞれ研磨パッド7が貼布されている。
ここで、キャリアプレート9の材質は、例えば、ステンレスやその他の金属、ガラスエポキシなどの樹脂複合材、あるいは、これらをコーティングしたものとすることができる。
図2に示すように、本実施形態において、キャリアプレート9の少なくとも上面に、同心円状に配置された、図示例で10本の主溝10が設けられている。これらの主溝10及び保持孔8によりキャリアプレート9は、図示例で11個の陸部11に区画されている。
図2に示すように、主溝10は、保持孔8により区画されるキャリアプレート9の縁部12間を延びている。すなわち、各主溝10の始端および終端のそれぞれは、キャリアプレート9の縁部12に繋がっている。換言すれば、各主溝10は、キャリアプレート9の外周13までは延びておらず、キャリアプレート9内で終端している。
なお、図示例では、各主溝10の始端及び終端は、キャリアプレート9の縁部12の異なる位置に繋がっているが、各主溝10の始端と終端とがキャリアプレート9の縁部12の同一の位置に繋がるように構成することもできる。
すなわち、図3に示すように、この実施形態のキャリアプレート9の上面には、主溝10間、主溝10とキャリアプレート9の外周13との間、及び主溝10と縁部12との間を接続する副溝14が複数本設けられている。
これらの副溝14は、キャリアプレート9の径方向において、縁部12からキャリアプレート9の外周13までの間に途切れた部分を有するように設けられている。すなわち、副溝14は、キャリアプレート9の径方向に、縁部12からキャリアプレート9の外周13まで連続した直線状に配置されてはおらず、この例では、キャリアプレート9の径方向に隣接する陸部11間に設けられた副溝14は、キャリアプレート9の周方向に互いにオフセットするように設けられている。図示例では、隣接する陸部11間を1つ置きに断続的に延びる5つの断続副溝群15を形成するようにして、複数の副溝14が設けられている。
以下、本発明の作用効果について説明する。
図4に示すように、自然滴下された研磨スラリー16は、上定盤2に設けられたスラリーノズル17を介してウェーハW及びキャリアプレート9の上面に供給される。キャリアプレート9の上面に供給された研磨スラリー16は、一部がキャリアプレート9の上面や上面に設けた主溝10内を流れ、残りの部分は、重力によってキャリアプレート9間等からキャリアプレート9の下面側へと供給される。
本発明によれば、キャリアプレート9の上面に設けた主溝10がキャリアプレートの外周13まで延びていない構成としているため、キャリアプレート9の上面に設けられた主溝10を流れる研磨スラリー17は、キャリアプレート9の外へは排出されづらく、従って該主溝10内に長時間滞留することができ、主溝10は、研磨スラリー17の貯留溝として機能する。
さらに、主溝10は、その始端及び終端の双方がキャリアプレート9の縁部12に繋がっているため、該縁部12を区画する保持孔8により保持されるウェーハWの上面へ十分に研磨スラリー16を供給することができる。
従って、本発明によれば、研磨スラリー16の、キャリアプレート9の上面での滞留時間を長くして、ウェーハWの上面に十分に研磨スラリー16を供給することができるため、両面研磨においてウェーハWの上面の研磨量を十分なものとすることができる。よって、本発明によれば、両面研磨後のウェーハWの上下面の研磨量や表面粗さの差異を低減して、同等の品質とすることができる。また、ウェーハWの上面に長時間滞留している研磨スラリー16により研磨生成物を排出しやすくなる。
キャリアプレート9の上面での滞留時間を長くさせることのできる研磨スラリー16の量を確保することができるからである。また、研磨パッド7全体への研磨スラリー16の分散性を良くすることができるからである。
キャリアプレート9の上面全面にわたって主溝10を配置することができ、また、1つの主溝10の始端から終端までの距離(延在長さ)を確保することができるため、研磨スラリー16をキャリアプレート9の上面に、より長時間滞留させるのに適しているからである。
なお、図2、図3に示す例では、各主溝10は円形(の一部)であり、各主溝10の中心も一致しているが、縁部12間を延びる1つの主溝10に対してキャリアプレート9の外周側に縁部12間を延びる別の主溝10を配置し、主溝10の本数に合わせてそれを繰り返したような配置としても、上記とほぼ同様の効果が得られるため、主溝10は、必ずしも円形である必要ななく、また、中心が一致していなくても良い。
なお、本発明においては、主溝10の溝幅が狭すぎると、滞留させる研磨スラリー16の量が低下してしまい、主溝10の溝幅が広すぎると、研磨パッド7の沈み込みにより研磨パッド7と主溝10底部が接触して溝内に滞留する堆積スラリーなどをキャリアプレート9上面上に飛散させてしまうおそれがあるため、主溝10の溝幅は0.5~10mmの範囲で配置することが好ましい。また、主溝10の溝深さが深すぎると、キャリアプレート9そのものの剛性が保てなくなるおそれがあり、一方、主溝10の溝深さが浅すぎると、キャリアプレート9表面の磨耗により溝が消失してしまうおそれがあるため、主溝10の溝深さは、キャリアプレート9の厚さの10~50%とすることが好ましい。
上記のような副溝14を設けることにより、副溝14は、研磨スラリー16の排出用溝として機能し、主溝10の始端から終端までの迂回ルートを形成して、キャリアプレート9の上面における研磨スラリー16の滞留時間を調整することができるからである。また、副溝14がキャリアプレートの径方向において、キャリアプレート9の縁部12から外周13まで途切れた部分を有さずに連続的に延びてしまうと、研磨スラリー16が副溝14を介して、キャリアプレート9の外部まで排出されやすくなってしまうからである。
以下、本発明の実施例について説明するが、本発明はこの実施例には何ら限定されない。
以下の発明例及び比較例にかかるキャリアプレートを用いてウェーハの両面研磨を行い、両面研磨後のウェーハの形状、厚さ及び表裏面の粗さを計測し、比較する試験を行った。
まず、発明例として、図3に示すキャリアプレートを有し、キャリアプレート以外は図1に示すのと同様の構成を有する両面研磨装置を用いた。なお、キャリアプレートの上面に設けた主溝及び副溝については、主溝及び副溝の溝幅は2mm、溝深さは200μmとし、主溝間のピッチ間隔は10mmとした。
また、比較例として、図5、図6に示すような、上面から下面までを貫通する穿孔18を6つ設けたキャリアプレートを有し、キャリアプレート以外は図1に示すのと同様の構成を有する両面研磨装置を用いた。
研磨は、両面の合計の研磨量が20μmとなるまで行った。
研磨後のシリコンウェーハについて、形状及び厚さは、黒田精工社製ナノメトロを用いて計測し、表面粗さ(Rms)については、レイテックス社製チャップマンを用いて計測した。
以下、評価結果について説明する。
図7(a)は、比較例にかかる研磨後のウェーハ形状を示す断面図であり、図7(b)は、発明例にかかる研磨後のウェーハ形状を示す断面図である。図7(a)(b)において、縦軸は、ウェーハの厚さ方向を示している。また、図7(a)(b)において、横軸は、ウェーハ中心を0としたときのウェーハ中心からの距離を、ウェーハの半径をRとして示している。
図7(a)(b)に示すように、比較例にかかる研磨後のウェーハは、中央部の研磨量が不足しており、全体的に厚さの不均一さが見られるが、発明例にかかる研磨後のウェーハは、より平坦度が高いことがわかる。
研磨量差を、ウェーハ下面の研磨量からウェーハ上面の研磨量を差し引いたものとして定義して評価した。
以下の表1に示すように、比較例にかかる研磨後のウェーハでは、ウェーハ上下面の研磨量の差が大きかったのに対し、発明例にかかる研磨後のウェーハでは、ウェーハ上下面の研磨量の差が小さいことがわかる。
研磨後のウェーハの上面、下面それぞれの表面粗さ(Rms)の計測結果を、以下の表2に示す。表2に示すように、発明例にかかる研磨ウェーハは、上面の表面粗さが小さくなっていることがわかる。また、下面についても比較例と同等の表面粗さとなっていることがわかる。
2 上定盤
3 下定盤
4 回転定盤
5 サンギア
6 インターナルギア
7 研磨パッド
8 保持孔
9 キャリアプレート
10 主溝
11 陸部
12 縁部
13 外周
14 副溝
15 断続副溝群
16 研磨スラリー
17 スラリーノズル
18 穿孔
W ワーク(ウェーハ)
Claims (4)
- ワークを保持する1つの保持孔を有する、ワークの両面研磨装置用のキャリアプレートであって、
前記キャリアプレートの少なくとも上面に、前記保持孔により区画される前記キャリアプレートの縁部間を延びる、複数本の主溝を設けたことを特徴とする、ワークの両面研磨装置用のキャリアプレート。 - 前記複数本の主溝を、同心円状に設けてなる、請求項1に記載のワークの両面研磨装置用のキャリアプレート。
- 前記主溝間、前記主溝と前記キャリアプレートの外周との間、及び前記主溝と前記縁部との間のうち、少なくとも1箇所を接続する副溝を設け、
前記副溝は、前記キャリアプレートの径方向において、前記縁部から前記キャリアプレートの外周までの間に途切れた部分を有するように設けてなる、請求項1又は2に記載のワークの両面研磨装置用のキャリアプレート。 - 上定盤及び下定盤を有する回転定盤と、前記回転定盤の中心部に設けられたサンギアと、前記回転定盤の外周部に設けられたインターナルギアと、前記上定盤と前記下定盤との間に設けられた、請求項1~3のいずれか一項に記載のキャリアプレートと、を備えたことを特徴とする、ワークの両面研磨装置。
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