WO2015053128A1 - ボンディングワイヤ用銅素線、及びボンディングワイヤ用銅素線の製造方法 - Google Patents

ボンディングワイヤ用銅素線、及びボンディングワイヤ用銅素線の製造方法 Download PDF

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WO2015053128A1
WO2015053128A1 PCT/JP2014/075999 JP2014075999W WO2015053128A1 WO 2015053128 A1 WO2015053128 A1 WO 2015053128A1 JP 2014075999 W JP2014075999 W JP 2014075999W WO 2015053128 A1 WO2015053128 A1 WO 2015053128A1
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Prior art keywords
wire
bonding
copper
strand
purity
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PCT/JP2014/075999
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English (en)
French (fr)
Japanese (ja)
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訓 熊谷
雨 谷
雄次 佐藤
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三菱マテリアル株式会社
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Priority to SG11201602116YA priority Critical patent/SG11201602116YA/en
Priority to CN201480004297.7A priority patent/CN104904000B/zh
Publication of WO2015053128A1 publication Critical patent/WO2015053128A1/ja
Priority to PH12016500617A priority patent/PH12016500617A1/en

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent

Definitions

  • the present invention relates to a copper wire for bonding wire for forming a bonding wire.
  • the semiconductor element and the lead are connected by a bonding wire.
  • a bonding wire As a bonding wire, Au wire is mainly used from the viewpoints of drawability and conductivity.
  • Au is expensive, a bonding wire made of a Cu wire is provided as a bonding wire that replaces the Au wire.
  • a bonding wire made of Cu wire is obtained by drawing a cast material having a wire diameter of 4 mm to 8 mm to 0.5 mm to obtain a copper wire for bonding wire, and further drawing the copper wire for bonding wire. It is manufactured by processing to a wire diameter of 30 ⁇ m to 50 ⁇ m.
  • Patent Documents 1 and 2 propose bonding wires made of Cu wire of high-purity copper (so-called 6NCu) having a purity of 99.9999% by mass or more. Since this bonding wire has high purity, its strength is low, the loop shape of the wire is easily formed, and the reliability is improved. Moreover, since there is high purity, there are few inclusions and it can suppress that a disconnection arises at the time of wire drawing.
  • the copper wire for bonding wire for forming the bonding wire is required to have a workability that does not break during the wire drawing even if the wire is thinned.
  • the present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a copper wire for a bonding wire that has good workability and hardly breaks even if it is thinned.
  • the inventors of the present invention have made a copper wire for bonding wire drawn to produce a bonding wire, and the copper wire for bonding wire is perpendicular to the wire drawing direction. It was found that by controlling the area ratio of the (001) plane in a simple cross section to a specific range, the workability of the copper wire for bonding wire can be improved and the disconnection during wire drawing can be suppressed.
  • the present invention has been completed based on the above findings, and the gist thereof is as follows.
  • the copper wire for bonding wire according to the first aspect of the present invention is a copper wire for bonding wire for forming a bonding wire, and is made of high-purity copper having a purity of 99.9999% by mass or more.
  • the wire diameter is 0.5 mm or more and 3.5 mm or less, and the area ratio of the (001) plane is 15% or more and 30% or less in a cross section perpendicular to the drawing direction.
  • the manufacturing method of the copper strand for bonding wires which concerns on the 2nd aspect of this invention is the heat
  • a cold-drawing process a cold-drawing process in which the produced wire is cold-drawn within a range of 80% to 99.6%, and the drawn wire
  • the hot working is a hot extrusion process in which the area reduction rate is 99% or more and 99.95% or less at a temperature of 700 ° C. or more and 900 ° C. or less. May be.
  • the area ratio of the (001) plane is 15% or more and 30% or less in the cross section perpendicular to the drawing direction. It is possible to improve, and the occurrence of disconnection during wire drawing can be suppressed.
  • the area ratio of the (001) plane is less than 15%, other orientations including the (111) plane increase, the strength decreases, and the wire breaks during wire drawing. Is likely to occur.
  • the area ratio of the (001) plane is more than 30% in a cross section perpendicular to the wire drawing direction, the elongation is lowered, and breakage is likely to occur during the wire drawing.
  • the area ratio of the (001) plane is set in the above range. Further, since the copper wire for bonding wire is made of high-purity copper having a purity of 99.9999% by mass or more, the strength of the bonding wire using the copper wire for bonding wire is sufficiently lowered, and the reliability of the bonding wire is improved. Can be improved. Moreover, since high purity copper with a purity of 99.9999% by mass or more has few inclusions, it is possible to suppress the occurrence of disconnection due to the inclusions during wire drawing. According to the method for manufacturing a copper wire for bonding wire according to the second aspect of the present invention, the area ratio of the (001) plane in the cross section perpendicular to the drawing direction of the copper wire for bonding wire is 15% or more and 30%. It can be as follows.
  • the copper wire for bonding wire according to the present embodiment is used as a wire when manufacturing a bonding wire having a wire diameter of 80 ⁇ m or less, preferably 5 ⁇ m or more and 50 ⁇ m or less.
  • the copper wire for bonding wire has a wire diameter of 0.5 mm to 3.5 mm.
  • the copper wire for bonding wires is made of high-purity copper (6NCu) having a purity of 99.9999% by mass or more.
  • the copper wire for bonding wire has an area ratio of (001) plane of 15% to 30% in a cross section perpendicular to the drawing direction.
  • the cross section perpendicular to the drawing direction is a cross section that includes the central axis of the copper wire for bonding wire and is orthogonal to the central axis.
  • the area ratio of the region in which the ⁇ 001> direction is oriented is the area ratio of the (001) plane.
  • the area ratio of the (001) plane when the area ratio of the (001) plane is less than 15% in the cross section perpendicular to the wire drawing direction, the strength decreases because other orientations including the (111) plane increase, and the wire breaks during wire drawing. Is likely to occur. Further, when the area ratio of the (001) plane is more than 30% in a cross section perpendicular to the wire drawing direction, the elongation is lowered, and breakage is likely to occur during the wire drawing. For these reasons, the area ratio of the (001) plane in the cross section perpendicular to the drawing direction is set in the above range.
  • the area ratio of the (001) plane is preferably 18% or more and 28% or less, but is not limited thereto.
  • the area ratio of the (001) plane of the cross section perpendicular to the drawing direction can be measured by an electron back scattering diffraction pattern (EBSD method).
  • EBSD method is obtained by connecting an EBSD detector to an SEM (scanning electron microscope), analyzing the orientation of the diffraction image (EBSD) of each crystal generated when the sample surface is irradiated with a focused electron beam, and analyzing it.
  • SEM scanning electron microscope
  • the crystal orientation of the material is measured from the obtained orientation data and position information of the measurement point.
  • the method for manufacturing a copper wire for bonding wire includes a hot working step S1, a wire drawing step S2, and a heat treatment step S3. Details of each step will be described below.
  • a billet (ingot) having a diameter of 250 mm and a length of 700 mm made of high-purity copper having a purity of 99.9999% by mass or more is prepared. Then, the billet is heated to a temperature range of 700 ° C. to 900 ° C. and hot-extruded in a range of 99% to 99.95% of the area reduction rate to produce a strand having a wire diameter of 6 mm to 20 mm. To do.
  • this hot working step S1 in order to destroy the cast structure of the billet (ingot) and make a fine and uniform hot worked structure as compared with the cast structure, in the above temperature range and area reduction rate. Hot extrusion is performed. In this embodiment, heating was performed at 800 ° C., and hot extrusion was performed under the condition of a surface reduction rate of 99.9% to produce a strand having a wire diameter of 8 mm.
  • Wire drawing process S2 The wire produced in the hot working step S1 described above is drawn (cold drawing) within a range of the area reduction rate of 80% or more and 99.6% or less, and the wire diameter is 0.5 mm or more and 3 Process to 5mm or less.
  • the wire drawing may be performed in one pass, but is preferably performed in a plurality of passes.
  • the hot work structure (crystal grains) formed in the hot work process S1 extends in the wire drawing direction to form a fibrous metal structure.
  • processing is performed from 8 mm to 1 mm in diameter (wire diameter) in 15 passes, and the area reduction rate is 98%.
  • a peeling wire drawing process may be performed.
  • Heat treatment step S3 The element wire drawn in the wire drawing step S2 is subjected to heat treatment within a range of 200 ° C. to 260 ° C. and 30 minutes to 300 minutes.
  • the heat treatment step S3 is performed in a batch annealing furnace having a reducing atmosphere.
  • a part of the metal structure made fibrous in the wire drawing step S2 is recrystallized, and a metal structure in which a fibrous metal structure and an equiaxed recrystallized structure coexist. It has become.
  • the wire is heat-treated in a reducing gas atmosphere by a batch-type annealing furnace at 220 ° C. for 60 minutes.
  • the copper wire for bonding wire according to the present embodiment is manufactured.
  • this copper wire for bonding wires into a bonding wire it is set as a 20-micrometer bonding wire, for example by drawing at a surface reduction rate of 99.96%.
  • the area ratio of the (001) plane is 15% or more and 30% or less in the cross section perpendicular to the drawing direction. The workability can be improved and the occurrence of disconnection at the time of wire drawing can be suppressed.
  • the copper wire for bonding wire is made of high-purity copper having a purity of 99.9999% by mass or more, the strength of the bonding wire using the copper wire for bonding wire is sufficiently lowered, and the reliability of the bonding wire is improved. Can be improved. Moreover, since high purity copper with a purity of 99.9999% by mass or more has few inclusions, it is possible to suppress the occurrence of disconnection due to the inclusions during wire drawing.
  • the manufacturing method of the copper wire for bonding wires which concerns on this embodiment is the hot working process S1 which hot-processes the ingot which consists of high purity copper, and produces a strand, and a surface area reduction rate of a strand
  • a heat treatment step S3 for performing the heat treatment inside. For this reason, the copper wire for bonding wires in which the area ratio of the (001) plane is 15% or more and 30% or less in a cross section perpendicular to the wire drawing direction can be manufactured.
  • the wire drawing step S2 When the wire drawing step S2 is performed within the range of the area reduction rate of 80% or more and 99.6% or less with respect to the strand produced in the hot working step S1, the crystal grains become fibrous in the drawing direction.
  • An elongated metal structure is formed, and the (001) plane increases in a cross section perpendicular to the drawing direction.
  • the elongation may be small (it is difficult to elongate) and may break.
  • the area reduction rate in the wire drawing step S2 is preferably 89% or more and 99.5% or less, but is not limited thereto.
  • the wire drawn in the wire drawing step S2 is subjected to a heat treatment within a range of 200 ° C. to 260 ° C. and 30 minutes to 300 minutes by a batch annealing furnace. I do. For this reason, the area ratio of the (001) plane in the cross section perpendicular to the wire drawing direction can be reliably controlled to 15% or more and 30% or less.
  • the heating temperature in the heat treatment step S3 is preferably 210 ° C. or higher and 250 ° C. or lower, but is not limited thereto.
  • the heating time is less than 30 minutes, sufficient recrystallized grains are not generated, and it becomes difficult to control the area ratio of the (001) plane to 30% or less.
  • the heating time exceeds 300 minutes, recrystallization proceeds too much, and it becomes difficult to control the area ratio of the (001) plane to 15% or more.
  • the heating temperature is preferably 60 minutes or more and 180 minutes or less, but is not limited thereto.
  • the heat treatment conditions of the heat treatment step are set in the range of 200 ° C. to 260 ° C. and 30 minutes to 300 minutes.
  • the area ratio of the (001) plane can be stably controlled within the above range by performing the heat treatment under the above heating conditions using a batch annealing furnace.
  • the shape and size of the ingot which consists of high purity copper of purity 99.9999 mass% or more, and it is not limited to this embodiment.
  • Comparative Example 1 a copper wire for bonding wire was manufactured without performing heat treatment after wire drawing. That is, a copper wire for bonding wire of Comparative Example 1 was manufactured in the same manner as the above-described example of the present invention except that the heat treatment after the wire drawing was not performed.
  • Comparative Example 2 First, an ingot made of high-purity copper having a purity of 99.9999% or more was prepared. Using this ingot as a raw material, a strand having a diameter of 8 mm was cast. Next, a wire having a diameter of 1 mm was drawn to a diameter of 1 mm, including cold peel drawing. In this wire drawing, the area reduction rate was 98%, and the number of passes was 15. Thus, the copper wire for bonding wires of Comparative Example 2 was produced. In addition, also in the comparative example 2, the heat processing after a wire drawing process are not performed.
  • EBSD measurement was performed on a cross section perpendicular to the drawing direction, and the area ratio of the (001) plane was measured.
  • the EBSD measurement procedure will be described below.
  • a cross section perpendicular to the wire drawing direction of the copper wire for bonding wire was mechanically polished using water-resistant abrasive paper and diamond abrasive grains, and then finish-polished using a colloidal silica solution.
  • an EBSD measuring device HITACHI S4300-SEM, EDAX / TSL OIM Data Collection
  • analysis software EDAX / TSL OIM Data Analysis ver.5.2
  • an electron beam is irradiated to each measurement point within the measurement range of the sample surface (cross section perpendicular to the drawing direction of the copper wire for bonding wire), and the electron beam is scanned two-dimensionally on the sample surface. Then, orientation analysis by backscattered electron diffraction was performed. In addition, the measurement point interval was 1.80 ⁇ m, and EBSD measurement was performed on an area of 600 ⁇ m ⁇ 940 ⁇ m. In the cross section of the copper wire for bonding wire measured by EBSD, a crystal plane with a deviation angle of 15 ° or less (crystal plane with an angle of (001) plane within 15 °) with respect to the (001) plane. Considering it as the (001) plane, the area ratio of the (001) plane in the measurement region was evaluated.
  • the manufactured copper wire for bonding wire was further drawn to a diameter of 5 ⁇ m.
  • wire drawing was performed from a diameter of 1 mm (1000 ⁇ m) to 100 ⁇ m, and wire drawing was further carried out to 100 ⁇ m to 50 ⁇ m, 50 ⁇ m to 25 ⁇ m, 25 ⁇ m to 10 ⁇ m, and 10 ⁇ m to 5 ⁇ m.
  • this wire drawing process was implemented so that the wire of 100 m of full length might be obtained in the step processed to 5 micrometers.
  • Comparative Example 1 since wire breakage occurred frequently in the wire drawing process, the production of the wire (drawing process) was stopped halfway. The measurement results are shown in Table 1.
  • Examples 1 to 5 of the present invention had good workability because the number of wire breaks was small even when wire drawing was performed from 100 ⁇ m to 5 ⁇ m.
  • Examples 1 to 5 of the present invention are copper wires for bonding wires that are less likely to be broken even if they are thinned.
  • Comparative Example 1 since the heat treatment was not performed after the wire was drawn to a diameter of 1 mm, the area ratio of the (001) plane was over 30%, and the number of disconnections was increased compared to the inventive example.
  • Comparative Example 2 an element wire having a diameter of 8 mm is cast, and the element wire is drawn to a diameter of 1 mm. The area reduction rate of the drawing process to a diameter of 1 mm is insufficient as compared with the example of the present invention. For this reason, the area ratio of the (001) plane was less than 15%, and the number of disconnections increased compared to the inventive example.
  • the workability is good and disconnection hardly occurs even if the wire is thinned, so that the bonding wire can be thinned.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
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  • Metallurgy (AREA)
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  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Bonding (AREA)
  • Metal Extraction Processes (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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PCT/JP2014/075999 2013-10-10 2014-09-30 ボンディングワイヤ用銅素線、及びボンディングワイヤ用銅素線の製造方法 WO2015053128A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG11201602116YA SG11201602116YA (en) 2013-10-10 2014-09-30 Copper wire for bonding wire and method of producing copper wire for bonding wire
CN201480004297.7A CN104904000B (zh) 2013-10-10 2014-09-30 接合线用铜线材及接合线用铜线材的制造方法
PH12016500617A PH12016500617A1 (en) 2013-10-10 2016-04-05 Copper wire for bonding wire and method of producing copper wire for bonding wire

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JP2013213114A JP5747970B2 (ja) 2013-10-10 2013-10-10 ボンディングワイヤ用銅素線
JP2013-213114 2013-10-10

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KR (1) KR101558138B1 (zh)
CN (1) CN104904000B (zh)
MY (1) MY177767A (zh)
PH (1) PH12016500617A1 (zh)
SG (1) SG11201602116YA (zh)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019031498A1 (ja) * 2017-08-09 2019-02-14 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ
WO2019031497A1 (ja) * 2017-08-09 2019-02-14 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ

Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH0786325A (ja) * 1993-09-14 1995-03-31 Hitachi Cable Ltd 電子機器用銅線
JP2013057121A (ja) * 2011-08-17 2013-03-28 Hitachi Cable Ltd 軟質希薄銅合金材料の製造方法

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Publication number Priority date Publication date Assignee Title
JP4750112B2 (ja) * 2005-06-15 2011-08-17 Ｊｘ日鉱日石金属株式会社 超高純度銅及びその製造方法並びに超高純度銅からなるボンディングワイヤ
JP4885117B2 (ja) * 2007-12-03 2012-02-29 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786325A (ja) * 1993-09-14 1995-03-31 Hitachi Cable Ltd 電子機器用銅線
JP2013057121A (ja) * 2011-08-17 2013-03-28 Hitachi Cable Ltd 軟質希薄銅合金材料の製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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WO2019031497A1 (ja) * 2017-08-09 2019-02-14 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ
JPWO2019031497A1 (ja) * 2017-08-09 2019-11-07 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ
JPWO2019031498A1 (ja) * 2017-08-09 2020-01-09 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ
CN110998814A (zh) * 2017-08-09 2020-04-10 日铁化学材料株式会社 半导体装置用Cu合金接合线
TWI692822B (zh) * 2017-08-09 2020-05-01 日商日鐵化學材料股份有限公司 半導體裝置用銅合金接合導線
US10790259B2 (en) 2017-08-09 2020-09-29 Nippon Steel Chemical & Material Co., Ltd. Cu alloy bonding wire for semiconductor device
CN110998814B (zh) * 2017-08-09 2021-04-23 日铁化学材料株式会社 半导体装置用Cu合金接合线
US10991672B2 (en) 2017-08-09 2021-04-27 Nippon Steel Chemical & Material Co., Ltd. Cu alloy bonding wire for semiconductor device

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PH12016500617B1 (en) 2016-06-13
SG11201602116YA (en) 2016-05-30
TWI540212B (zh) 2016-07-01
KR20150085126A (ko) 2015-07-22
CN104904000B (zh) 2019-05-17
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MY177767A (en) 2020-09-23
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