MY177767A - Copper wire for bonding wire - Google Patents

Copper wire for bonding wire

Info

Publication number
MY177767A
MY177767A MYPI2016701080A MYPI2016701080A MY177767A MY 177767 A MY177767 A MY 177767A MY PI2016701080 A MYPI2016701080 A MY PI2016701080A MY PI2016701080 A MYPI2016701080 A MY PI2016701080A MY 177767 A MY177767 A MY 177767A
Authority
MY
Malaysia
Prior art keywords
wire
copper
bonding
copper wire
bonding wire
Prior art date
Application number
MYPI2016701080A
Inventor
Kumagai Satoshi
Gu Yu
Sato Yuji
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of MY177767A publication Critical patent/MY177767A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Bonding (AREA)
  • Metal Extraction Processes (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

A copper wire for a bonding wire for forming a bonding wire is disclosed, in which the copper wire is formed of high-purity copper having a purity of 99.9999 mass% or more, a wire diameter of the copper wire is 0.5 mm to 3.5 mm, and an area ratio of a (001) plane in a cross-section of the copper wire perpendicular to a wire-drawing direction is 15% to 30%.
MYPI2016701080A 2013-10-10 2014-09-30 Copper wire for bonding wire MY177767A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013213114A JP5747970B2 (en) 2013-10-10 2013-10-10 Copper wire for bonding wire

Publications (1)

Publication Number Publication Date
MY177767A true MY177767A (en) 2020-09-23

Family

ID=52812946

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2016701080A MY177767A (en) 2013-10-10 2014-09-30 Copper wire for bonding wire

Country Status (8)

Country Link
JP (1) JP5747970B2 (en)
KR (1) KR101558138B1 (en)
CN (1) CN104904000B (en)
MY (1) MY177767A (en)
PH (1) PH12016500617A1 (en)
SG (1) SG11201602116YA (en)
TW (1) TWI540212B (en)
WO (1) WO2015053128A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019031497A1 (en) * 2017-08-09 2019-02-14 日鉄ケミカル＆マテリアル株式会社 Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
CN111033706B (en) * 2017-08-09 2021-05-25 日铁化学材料株式会社 Cu alloy bonding wire for semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786325A (en) * 1993-09-14 1995-03-31 Hitachi Cable Ltd Copper wire for electronic device
EP1903119B1 (en) * 2005-06-15 2015-09-23 JX Nippon Mining & Metals Corporation A method of manufacturing high purity copper
JP4885117B2 (en) * 2007-12-03 2012-02-29 新日鉄マテリアルズ株式会社 Bonding wires for semiconductor devices
US20130042949A1 (en) * 2011-08-17 2013-02-21 Hitachi Cable, Ltd. Method of manufacturing soft-dilute-copper-alloy-material

Also Published As

Publication number Publication date
CN104904000A (en) 2015-09-09
KR101558138B1 (en) 2015-10-06
TWI540212B (en) 2016-07-01
SG11201602116YA (en) 2016-05-30
PH12016500617B1 (en) 2016-06-13
JP5747970B2 (en) 2015-07-15
WO2015053128A1 (en) 2015-04-16
KR20150085126A (en) 2015-07-22
CN104904000B (en) 2019-05-17
TW201522673A (en) 2015-06-16
JP2015076559A (en) 2015-04-20
PH12016500617A1 (en) 2016-06-13

Similar Documents

Publication Publication Date Title
MX2015015922A (en) Encapsulates.
HK1221980A1 (en) Copper alloy wire material and method for producing same
MX2015009888A (en) Aluminium casting alloy.
SG11201508519YA (en) Copper bond wire and method of making the same
SG11201505623XA (en) Pb-FREE SOLDER ALLOY
PH12016000308A1 (en) Palladium (pd)-coated copper wire for ball bonding
IN2015DN02883A (en)
IN2013MU00646A (en)
EP3006582A4 (en) Copper alloy wire
WO2015061686A3 (en) Retinoid x receptor-gamma agonists and retinoid x receptor-alpha antagonists for treatment of cancer
EP3013509A4 (en) Welding process gas metal arc welding - double cold wire (gmaw-dcw)
HK1206866A1 (en) Through-type furnace for substrates and die bonder
MY177767A (en) Copper wire for bonding wire
SI2873475T1 (en) Method of manufacturing wires of Cu-Ag alloys
SG10201603986XA (en) Copper alloy bonding wire
MX2016001720A (en) Surface-modified metal colloids and production thereof.
IN2014DN07191A (en)
MY170453A (en) Etching material
EP3006600A4 (en) Supplement, surface-treated metal material, and production method therefor
IN2013MU02528A (en)
MX2016006150A (en) Brass alloy comprising ceramic alumina nanoparticles and having improved machinability.
BR112017020037A2 (en) mineral pastes
BR112014028816A2 (en) diisobutene manufacturing method
IN2013MU03016A (en)
EP3066683A4 (en) Adjustable losses of bond wire arrangement