CN104904000B - Copper wire for bonding wire and method for manufacturing copper wire for bonding wire - Google Patents
Copper wire for bonding wire and method for manufacturing copper wire for bonding wire Download PDFInfo
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- CN104904000B CN104904000B CN201480004297.7A CN201480004297A CN104904000B CN 104904000 B CN104904000 B CN 104904000B CN 201480004297 A CN201480004297 A CN 201480004297A CN 104904000 B CN104904000 B CN 104904000B
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- copper wires
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title description 33
- 238000004519 manufacturing process Methods 0.000 title description 17
- 238000005491 wire drawing Methods 0.000 claims abstract description 91
- 239000010949 copper Substances 0.000 claims abstract description 71
- 229910052802 copper Inorganic materials 0.000 claims abstract description 68
- 230000008602 contraction Effects 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 11
- 238000001192 hot extrusion Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 31
- 238000001887 electron backscatter diffraction Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 7
- 229910000831 Steel Inorganic materials 0.000 description 5
- 239000010813 municipal solid waste Substances 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Wire Bonding (AREA)
- Metal Extraction Processes (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The copper wire for bonding wires of the present invention is a copper wire for bonding wires used for forming bonding wires, and is composed of high-purity copper having a purity of 99.9999 mass% or more, has a wire diameter of 0.5mm to 3.5mm, and has an area ratio of a (001) plane in a cross section perpendicular to a wire drawing direction of 15% to 30%.
Description
Technical field
The present invention relates to a kind of closing line copper wires for being used to form closing line.
It is preferential this application claims patent application the 2013-213114th based on October 10th, 2013 in Japanese publication
Power, and its content is applied at this.
Background technique
In general, semiconductor element is connect with lead by closing line in the semiconductor device of semiconductor element mounted thereon.With
It is past, for viewpoints such as stringiness and electric conductivity, Au line is mainly used as closing line.However since Au price is higher, make
The closing line being made of Cu line is provided to replace the closing line of Au line.
The closing line being made of Cu line for example manufactures by the following method, i.e., adds the casting material wire drawing of line footpath 4mm~8mm
Work is to 0.5mm, using as after closing line copper wires, to closing line copper wires further progress wire drawing, from line
30 μm of diameter are machined to 50 μm.Such as it proposes by purity to be the high-purity copper (institute of 99.9999 mass % or more in patent document 1,2
Call 6NCu) Cu line constitute closing line.The closing line purity is higher and intensity is lower, the annular shape of copper wire easy to form
Deng, and reliability is improved.Also, due to purity is higher and field trash is less, be able to suppress carry out wire drawing when generation
Broken string.
Patent document 1: the clear 62-111455 bulletin of Japanese Patent Publication
Patent document 2: Japanese Patent Publication 04-247630 bulletin
But recently as the miniaturization of semiconductor device and the cost effective graph thinning for requiring closing line, it is contemplated that will
The line footpath for carrying out closing line will be carefully to such as 10 μm or less.Therefore, it is needed as the closing line for being used to form closing line with copper wires
Even if the processability that will not break when carrying out wire drawing with experience graph thinning.
However, when closing line shown in manufacture patent document 1,2, if by carrying out wire drawing with copper wires to closing line
Being machined to such as line footpath is 10 μm, then the extensibility of wire rod is not enough, and leads to the broken string for frequently occurring wire rod.If such as
This breaks when carrying out wire drawing with copper wires to closing line, then can lead to the problem of causes productivity to be remarkably decreased.
Summary of the invention
The present invention completes in view of the foregoing, its purpose is to provide a kind of processability is good, even and if experience filament
Change the closing line copper wires for being also not susceptible to broken string.
The inventors of the present invention are to solve the above subject to obtain following opinion through research, i.e., by being carried out to closing line with copper wires
Wire drawing is come when manufacturing closing line, in closing line copper wires, by (001) face in the section vertical with wire-drawing direction
The area ratio controls in particular range, thus, it is possible to improve the processability of closing line copper wires, and inhibits to carry out wire drawing
When broken string.
The present invention is completed according to above-mentioned opinion, and objective is as follows.
I.e. closing line involved in the 1st aspect of the present invention is the closing line copper for being used to form closing line with copper wires
Wire rod, wherein its by purity be 99.9999 mass % or more high-purity copper constitute, line footpath be 0.5mm or more 3.5mm hereinafter,
The area ratio in (001) face is 15% or more 30% or less in the section vertical with wire-drawing direction.
Also, the manufacturing method of closing line copper wires involved in the 2nd aspect of the present invention has: hot procedure,
Hot-working is carried out to make wire rod to the ingot bar being made of the high-purity copper that purity is 99.9999 mass % or more；Wire drawing
Process carries out cold-drawn wire to the made wire rod in the range that the contraction percentage of area is 80% or more 99.6% or less and adds
Work；And heating treatment step, 200 DEG C or more 260 DEG C or less, 30 minutes or more 300 are carried out to the wire rod through wire drawing
Minute or less heat treatment in range.
In the manufacturing method of engagement copper wires involved in second method, the hot-working be can be at 700 DEG C or more 900
Hot extrusion is carried out at DEG C temperature below until the contraction percentage of area reaches 99% or more 99.95% processing below.
Also, it can use periodic annealing furnace in the heating treatment step and heat the wire rod.
Closing line copper wires involved in first method according to the present invention, in the section vertical with wire-drawing direction
(001) the area ratio in face is 15% or more 30% hereinafter, therefore can be improved processability, and is able to suppress generation when carrying out wire drawing
Broken string.
When the area ratio in (001) face in the section vertical with wire-drawing direction is less than 15%, cause headed by (111) face
Other orientation increase, intensity decline, and are easy to be broken when carrying out wire drawing.Also, when vertical with wire-drawing direction
When the area ratio in (001) face is more than 30% in section, extensibility decline, and be easy to be broken when carrying out wire drawing.Cause
This, the area ratio in (001) face is set within the above range.
In addition, closing line is made of with copper wires the high-purity copper that purity is 99.9999 mass % or more, therefore can fill
Divide the intensity for reducing the closing line using the closing line copper wires, and improves the reliability of closing line.Also, purity is
Field trash is less in the high-purity copper of 99.9999 mass % or more, therefore is able to suppress when carrying out wire drawing by field trash
Cause to break.
The manufacturing method of closing line copper wires involved in second method according to the present invention can will be used with closing line
The area ratio in (001) face is set as 15% or more 30% or less in the vertical section of the wire-drawing direction of copper wires.
It is capable of providing that a kind of processability is good according to the present invention, even and if graph thinning is undergone also to be not susceptible to the engagement of broken string
Line copper wires.
Detailed description of the invention
Fig. 1 is the flow chart of the manufacturing method of closing line copper wires involved in embodiments of the present invention.
Specific embodiment
Hereinafter, to the manufacturer of closing line copper wires and closing line copper wires involved in embodiments of the present invention
Method is illustrated.
Closing line involved in present embodiment is used as manufacturing line footpath being 80 μm hereinafter, preferably 5 μ of line footpath with copper wires
Wire rod when 50 μm of closing lines below of m or more.Also, the line footpath of closing line copper wires is 0.5mm or more 3.5mm or less.
Closing line copper wires are made of the high-purity copper (6NCu) that purity is 99.9999 mass % or more.
Also, in the closing line copper wires, in the section vertical with wire-drawing direction the area ratio in (001) face be 15% with
Upper 30% or less.In present embodiment, the section vertical with wire-drawing direction refers to the central axis including closing line copper wires, and
With the section of the orthogonality of center shaft.Also, in present embodiment, by the profile orientation vertical with wire-drawing direction, relative to
(001) drift angle in face is the gross area rate of the crystal face within 15 °, i.e. 001 direction > < takes within 15 ° relative to wire-drawing direction
To the area ratio in region be set as the area ratio in (001) face.
Wherein, when the area ratio in (001) face is less than 15% in the section vertical with wire-drawing direction, headed by (111) face
Other orientation increase, therefore intensity declines, and is easy to happen fracture when carrying out wire drawing.Also, it is vertical with wire-drawing direction
Section in the area ratio in (001) face when being more than 30%, extensibility decline, and be easy to happen fracture when carrying out wire drawing.
In view of this reason, the area ratio in (001) face is set within the above range in the section vertical with wire-drawing direction.
(001) the area ratio in face is preferably 18% or more 28% hereinafter, but it is not limited to this.
In addition, the area ratio in (001) face of the section vertical with wire-drawing direction, can pass through electron backscatter diffraction picture
(Electron Back Scatter Diffraction Patterns) method (EBSD method) measures.The EBSD method is in SEM
(scanning electron microscope) connects EBSD detector, to will assemble generated each crystallization when electron beam is irradiated to specimen surface
The orientation of diffraction image (EBSD) analyzed, and surveyed according to the location information of the bearing data and measuring point that are obtained by analysis
Determine the method for the crystal orientation of material.
Then, the manufacturing method of the copper wires of closing line involved in present embodiment is illustrated.Such as such as Fig. 1 institute
Show, the manufacturing method of closing line copper wires has hot procedure S1, wire drawing process S2 and heating treatment step S3.With
Under each process is described in detail.
(hot procedure S1)
Firstly, preparing the diameter 250mm, the length 700mm that are made of the high-purity copper that purity is 99.9999 mass % or more
Steel billet (ingot bar).
Later, heat the steel billet with 700 DEG C or more 900 DEG C of temperature ranges below, and with the contraction percentage of area be 99% with
Upper 99.95% range below carries out hot extrusion processing, to make line footpath as 6mm or more 20mm wire rod below.The hot-working
In process S1, in order to destroy cast sturcture possessed by steel billet (ingot bar), and become finer and uniform compared with cast sturcture
Hot-working tissue, hot extrusion processing is carried out with above-mentioned temperature range and the contraction percentage of area.
In present embodiment, 800 DEG C are heated to, and the condition for being 99.9% with the contraction percentage of area carries out hot extrusion processing,
To make line footpath as the wire rod of 8mm.
(wire drawing process S2)
To the line made in above-mentioned hot procedure S1 in the range that the contraction percentage of area is 80% or more 99.6% or less
Material carries out wire drawing (cold-drawn wire processing), and being machined to line footpath is 0.5mm or more 3.5mm or less.Wherein, wire drawing can be with
1 passage is carried out, multiple passages is preferably divided to carry out.In wire drawing process S2, the hot-working that is formed in hot procedure S1
It organizes (crystal grain) to extend to wire drawing direction, becomes the metal structure of threadiness.
In present embodiment, point 15 passages carry out the processing of diameter (line footpath) 8mm to 1mm, the contraction percentage of area 98%.
In addition, peeling wire drawing can also be carried out in wire drawing process S2.
(heating treatment step S3)
200 DEG C or more 260 DEG C or less, 30 minutes or more are carried out to the wire rod through wire drawing in above-mentioned wire drawing process S2
Heat treatment in 300 minutes or less ranges.Wherein, heating treatment step S3 is in the periodic annealing furnace for becoming reducing atmosphere
It carries out.In heating treatment step S3, become a part in the metal structure of threadiness in wire drawing process S2 through again
Crystallization, and become the metal structure that fibrous metal tissue is mixed with isometric recrystallized structure.
In present embodiment, carried out in reducing gas atmosphere by periodic annealing furnace with the condition of 220 DEG C, 60 minutes
The heat treatment of wire rod.
Closing line copper wires involved in present embodiment manufactured as above.
It in addition, when the closing line is processed into closing line with copper wires, such as by carrying out the contraction percentage of area is 99.96%
Wire drawing make 20 μm of closing line.
According to closing line copper wires involved in present embodiment as constructed as above, in the section vertical with wire-drawing direction
(001) the area ratio in face becomes 15% or more 30% hereinafter, therefore can be improved processability, and be able to suppress disconnected when carrying out wire drawing
The generation of line.
In addition, closing line is made of with copper wires the high-purity copper that purity is 99.9999 mass % or more, therefore can fill
Divide the intensity for reducing the closing line using the closing line copper wires, and improves the reliability of closing line.Also, purity is
Field trash is less in the high-purity copper of 99.9999 mass % or more, therefore is able to suppress and drawn when wire drawing by field trash
The generation of the broken string risen.
Also, the manufacturing method of closing line copper wires involved in present embodiment has: hot procedure S1, to by
The ingot bar that high-purity copper is constituted carries out hot-working to make wire rod；Wire drawing process S2 is 80% or more in the contraction percentage of area
Cold-drawn wire processing is carried out to wire rod in 99.6% or less range；And heating treatment step S3, to the wire rod through wire drawing into
Heat treatment in 200 DEG C of row or more 260 DEG C or less, 30 minutes or more 300 minutes or less ranges.Therefore it can manufacture and wire drawing
The area ratio in (001) face is 15% or more 30% closing line copper wires below in the vertical section in direction.
For the wire rod made in hot procedure S1, if being 80% or more 99.6% or less range in the contraction percentage of area
Interior progress wire drawing process S2 then becomes the metal structure that crystal grain is extended into threadiness to wire-drawing direction, hangs down with wire-drawing direction
(001) face will increase in straight section.If, can be because to the metal structure further progress wire drawing for being extended into the threadiness
Span less (being difficult to stretch) and be broken.For this purpose, carrying out heating treatment step S3 with above-mentioned condition, thus make to be extended into
A part in the metal structure of threadiness is recrystallized, within the specified scope by the area ratio control in (001) face, to change
Kind extensibility, and improve processability when carrying out wire drawing.The contraction percentage of area in wire drawing process S2 is preferably 89% or more
99.5% hereinafter, but it is not limited to this.
Also, in heating treatment step S3, to, by the wire rod of wire drawing, passing through periodic annealing furnace in wire drawing process S2
Heated in range within 300 minutes or less with 200 DEG C or more 260 DEG C or less, 30 minutes or more.It therefore, can will be with drawing
The area ratio in (001) face in the vertical section in silk direction is reliably controlled in 15% or more 30% or less.
In heating treatment step S3, when heating temperature is less than 200 DEG C, enough recrystallization particles will not be generated and be difficult to
The area ratio in (001) face is controlled 30% hereinafter, therefore extensibility declines, result is possible to the hair when carrying out wire drawing
Raw fracture.Also, when heating temperature is more than 260 DEG C, excessively recrystallized so that being difficult to control the area ratio in (001) face
15% or more, therefore intensity declines, and causes be easily broken off when wire drawing.Heating temperature in heating treatment step S3
Preferably 210 DEG C or more 250 DEG C of degree hereinafter, but it is not limited to this.
Also, in heating treatment step S3, when heated between be less than 30 minutes when, enough recrystallization grains will not be generated
Son, so that being difficult to control the area ratio in (001) face below 30%.Also, when between when heated more than 300 minutes, excessively
It is recrystallized so that being difficult to control the area ratio in (001) face 15% or more.Heating temperature is preferably 60 minutes or more 180
Minute is hereinafter, but it is not limited to this.
For the above reason, the heat treatment condition of heating treatment step is at 200 DEG C or more 260 DEG C or less, 30 minutes or more
In 300 minutes or less ranges.
For example, in heat treatment between high temperature, short time as current annealing, can not formed by wire drawing
It is stably formed recrystallized structure in the tissue of threadiness, and is difficult to (001) face in the section vertical with wire-drawing direction
The area ratio is controlled in above range.On the other hand, in present embodiment, by utilizing periodic annealing furnace with above-mentioned heating condition
Heated, can steadily be controlled the area ratio in (001) face within the above range.
More than, embodiments of the present invention are illustrated, but the present invention is not limited thereto, are not departing from its invention
It can be suitably changed in the range of technical idea.
In addition, the shape and size for the ingot bar being made of the high-purity copper that purity is 99.9999 mass % or more are not
Limitation, and it is not limited to present embodiment.
Embodiment
Hereinafter, being illustrated to the result of the confirmation experiment carried out for confirmation effectiveness of the invention.
(example 1~5 of the present invention)
Firstly, preparing the diameter 250mm, the length 700mm that are made of the high-purity copper that purity is 99.9999 mass % or more
Steel billet.By the heating steel billet at 800 DEG C, and hot extrusion processing is carried out, to make the wire rod of diameter 8mm.
Then, the wire drawing including cold peeling wire drawing is carried out to the wire rod of diameter 8mm until diameter reaches 1mm.
In addition, the contraction percentage of area is set as 98% in the wire drawing, passage number is set as 15 times.
Then, the wire rod through wire drawing is packed into periodic annealing furnace, with heating temperature shown in table 1, heating time
Heated.In addition, the atmosphere of periodic annealing furnace is set as reducing atmosphere.
The closing line copper wires of example 1~5 of the present invention manufactured as above.
(comparative example 1)
In comparative example 1, closing line copper wires have been manufactured without the heat treatment after wire drawing.I.e. in addition to without
Except heat treatment after wire drawing, the closing line copper of comparative example 1 is produced in a manner of identical with aforementioned present invention example
Wire rod.
(comparative example 2)
Firstly, preparing the ingot bar being made of the high-purity copper that purity is 99.9999% or more.Using the ingot bar as raw material and
Cast the wire rod of diameter 8mm.
Then, the wire drawing including cold peeling wire drawing is carried out to the wire rod of diameter 8mm until diameter reaches 1mm.
In addition, the contraction percentage of area is set as 98% in the wire drawing, passage number is set as 15 times.
So produce the closing line copper wires of comparative example 2.In addition, after also not carrying out wire drawing in comparative example 2
Heat treatment.
In closing line copper wires manufactured as above, the EBSD measurement of the section vertical with wire-drawing direction is carried out, and is measured
(001) the area ratio in face.
The sequence of EBSD measurement is illustrated below.Firstly, utilizing water-proof abrasive paper and diamond abrasive grain pair and closing line
After carrying out mechanical lapping with the vertical section of the wire-drawing direction of copper wires, refined using silicic acid sol solution.Later, pass through
EBSD measurement device (S4300-SEM, EDAX/TSL Co. of HITACHI Co., Ltd. manufacture, the OIM Data of Ltd. manufacture
Collection it) and analyzes software (the OIM Data Analysis ver.5.2 of EDAX/TSL Co., Ltd. manufacture), measures
The crystal orientation of the section vertical with the wire-drawing direction of closing line copper wires.Specifically, (being used to specimen surface with closing line
The vertical section of the wire-drawing direction of copper wires) measurement range in each measuring point irradiating electron beam, and specimen surface 2 tie up
Scanning beam, to carry out the orientation analysis based on electron backscattered diffraction.In addition, measuring point interval is set as 1.80 μm,
EBSD measurement is carried out to 940 μm of 600 μ m of regions.
In addition, through EBSD measurement closing line copper wires section in, will relative to (001) face drift angle 15 ° with
Interior crystal plane (with (001) face at angle be crystal plane within 15 °) be considered as (001) face, in evaluation measurement region
(001) the area ratio in face.
Also, it for manufactured closing line copper wires further progress wire drawing, is machined to diameter and reaches 5 μm.
Specifically, from diameter 1mm (1000 μm) wire drawing to 100 μm, further from 100 μm of wire drawings to 50 μm, from 50 μm
Wire drawing to 25 μm, from 25 μm of wire drawings to 10 μm, from 10 μm of wire drawings to 5 μm.At this point, measurement is carried out from 100 μm
Broken string number when being processed to 5 μm of each diameters.In addition, implementing the wire drawing, so as to obtain in the stage for being machined to 5 μm
Obtain the copper wire that overall length is 100m.
In addition, take place frequently broken string in wire drawing about comparative example 1, therefore midway has ceased the manufacture of copper wire (wire drawing adds
Work).
Said determination result is shown in table 1.
[table 1]
As shown in table 1, confirm in example 1~5 of the present invention, even if from 100 μm of wire drawings to 5 μm, broken string number also compared with
Few, processability is good.Even if confirming example 1~5 of the present invention is the closing line copper for undergoing graph thinning to be not easy to produce broken string
Wire rod.
In comparative example 1, do not heated after wire drawing reaches 1mm to diameter, therefore (001) face
The area ratio is more than 30%, therefore the number that breaks becomes more compared with example of the present invention.
Also, in comparative example 2, the wire rod of diameter 8mm is cast, and wire rod wire drawing to the diameter is reached into 1mm, due to
The contraction percentage of area to the wire drawing of diameter 1mm is not sufficient enough compared with example of the present invention, and therefore the area ratio in (001) face is less than
15%, and the number that breaks becomes more compared with example of the present invention.
Industrial availability
Related closing line copper wires according to the present invention, even if since processability is good and experience graph thinning is also not easy
Broken string is generated, therefore can realize the graph thinning of closing line.
Symbol description
S1- hot procedure, S2- wire drawing process, S3- heating treatment step.
Claims (1)
1. a kind of closing line copper wires, which is characterized in that
It is constituted by the material of hot extrusion processing and wire drawing, which is added with 700 DEG C or more 900 DEG C of temperature ranges below
The ingot bar of hot copper, and be after 99% or more 99.95% range below carries out hot extrusion processing, to be drawn with the contraction percentage of area
Silk processing obtains, and
It is made of the high-purity copper that purity is 99.9999 mass % or more,
Line footpath be 0.5mm or more 3.5mm hereinafter,
The area ratio in (001) face is 15% or more 30% or less in the section vertical with wire-drawing direction.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013213114A JP5747970B2 (en) | 2013-10-10 | 2013-10-10 | Copper wire for bonding wire |
| JP2013-213114 | 2013-10-10 | ||
| PCT/JP2014/075999 WO2015053128A1 (en) | 2013-10-10 | 2014-09-30 | Bonding-wire copper strand, and manufacturing method for bonding-wire copper strand |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104904000A CN104904000A (en) | 2015-09-09 |
| CN104904000B true CN104904000B (en) | 2019-05-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480004297.7A Active CN104904000B (en) | 2013-10-10 | 2014-09-30 | Copper wire for bonding wire and method for manufacturing copper wire for bonding wire |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JP5747970B2 (en) |
| KR (1) | KR101558138B1 (en) |
| CN (1) | CN104904000B (en) |
| MY (1) | MY177767A (en) |
| PH (1) | PH12016500617A1 (en) |
| SG (1) | SG11201602116YA (en) |
| TW (1) | TWI540212B (en) |
| WO (1) | WO2015053128A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3667709B1 (en) * | 2017-08-09 | 2024-05-15 | NIPPON STEEL Chemical & Material Co., Ltd. | Cu alloy bonding wire for semiconductor device |
| CN111033706B (en) * | 2017-08-09 | 2021-05-25 | 日铁化学材料株式会社 | Cu alloy bonding wire for semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0786325A (en) * | 1993-09-14 | 1995-03-31 | Hitachi Cable Ltd | Copper wire for electronic device |
| CN102953022A (en) * | 2011-08-17 | 2013-03-06 | 日立电线株式会社 | Method of manufacturing soft-dilute-copper-alloy-material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101006035B1 (en) * | 2005-06-15 | 2011-01-06 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Ultrahigh-purity copper and process for producing the same, and bonding wire comprising ultrahigh-purity copper |
| JP4885117B2 (en) * | 2007-12-03 | 2012-02-29 | 新日鉄マテリアルズ株式会社 | Bonding wires for semiconductor devices |
-
2013
- 2013-10-10 JP JP2013213114A patent/JP5747970B2/en active Active
-
2014
- 2014-09-30 WO PCT/JP2014/075999 patent/WO2015053128A1/en active Application Filing
- 2014-09-30 KR KR1020157018027A patent/KR101558138B1/en active IP Right Grant
- 2014-09-30 MY MYPI2016701080A patent/MY177767A/en unknown
- 2014-09-30 SG SG11201602116YA patent/SG11201602116YA/en unknown
- 2014-09-30 CN CN201480004297.7A patent/CN104904000B/en active Active
- 2014-10-03 TW TW103134559A patent/TWI540212B/en active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0786325A (en) * | 1993-09-14 | 1995-03-31 | Hitachi Cable Ltd | Copper wire for electronic device |
| CN102953022A (en) * | 2011-08-17 | 2013-03-06 | 日立电线株式会社 | Method of manufacturing soft-dilute-copper-alloy-material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5747970B2 (en) | 2015-07-15 |
| WO2015053128A1 (en) | 2015-04-16 |
| KR20150085126A (en) | 2015-07-22 |
| TWI540212B (en) | 2016-07-01 |
| MY177767A (en) | 2020-09-23 |
| SG11201602116YA (en) | 2016-05-30 |
| CN104904000A (en) | 2015-09-09 |
| PH12016500617B1 (en) | 2016-06-13 |
| TW201522673A (en) | 2015-06-16 |
| PH12016500617A1 (en) | 2016-06-13 |
| JP2015076559A (en) | 2015-04-20 |
| KR101558138B1 (en) | 2015-10-06 |
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