WO2015041392A1 - Élément chauffant et appareil de traitement de substrat comportant ce dernier - Google Patents

Élément chauffant et appareil de traitement de substrat comportant ce dernier Download PDF

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Publication number
WO2015041392A1
WO2015041392A1 PCT/KR2014/002385 KR2014002385W WO2015041392A1 WO 2015041392 A1 WO2015041392 A1 WO 2015041392A1 KR 2014002385 W KR2014002385 W KR 2014002385W WO 2015041392 A1 WO2015041392 A1 WO 2015041392A1
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Prior art keywords
hot wire
substrate
heating
heater member
wire
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PCT/KR2014/002385
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English (en)
Korean (ko)
Inventor
방홍주
김상연
신동화
김민석
양진영
Original Assignee
국제엘렉트릭코리아 주식회사
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Application filed by 국제엘렉트릭코리아 주식회사 filed Critical 국제엘렉트릭코리아 주식회사
Priority to US15/022,729 priority Critical patent/US20160230282A1/en
Priority to JP2016538486A priority patent/JP6200092B2/ja
Priority to CN201480052215.6A priority patent/CN105580127B/zh
Publication of WO2015041392A1 publication Critical patent/WO2015041392A1/fr

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    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a heater member.
  • an atomic layer deposition method is introduced in the deposition process for manufacturing a semiconductor device.
  • the atomic layer deposition method is a process of forming a deposition layer with a desired thickness by repeating a unit reaction cycle for depositing an atomic layer thickness.
  • the atomic layer deposition method is used for chemical vapor deposition (CVD) or sputter method.
  • CVD chemical vapor deposition
  • sputter method a process of forming a deposition layer with a desired thickness by repeating a unit reaction cycle for depositing an atomic layer thickness.
  • CVD chemical vapor deposition
  • sputter method sputter method.
  • the deposition rate is very slow, and it takes a lot of time to grow the film to the desired thickness, thereby reducing productivity.
  • the temperature uniformity of the susceptor on which the substrate is placed is one of the biggest factors that influence the uniformity of the thickness of the thin film deposited on the substrate.
  • an edge temperature drop occurs due to an increase in the number of substrates and heat loss of the susceptor.
  • corrosion of the heater due to process gas penetration and degradation of the heater due to oxide film deposition are generated.
  • An object of the present invention is to provide a heater member and a substrate processing apparatus having the same that can increase the temperature uniformity.
  • an object of the present invention is to provide a heater member and a substrate processing apparatus having the same that can prevent corrosion of the hot wire by the process gas during the process.
  • the process chamber A substrate susceptor installed in the process chamber and having a plurality of substrates disposed on the same plane and connected to a rotating shaft to rotate; A heater member positioned on a bottom surface of the substrate susceptor; And an injection member for injecting gas to the entire processing surface of the substrate at a position corresponding to each of the plurality of substrates placed on the substrate susceptor;
  • the heater member has an inner space, and in the inner space, heating wires for heating the substrate susceptor are disposed in a plurality of rows horizontally and vertically in concentric circles about a rotation axis of the substrate susceptor. do.
  • the heater member may further include hot wire supporters for supporting the hot wire to prevent sagging and twisting of the hot wire due to thermal expansion of the hot wire.
  • the hot wire supporter may include a concave support surface formed in a direction orthogonal to the longitudinal direction of the hot wire to ensure fluidity due to thermal expansion of the hot wire.
  • the hot wire supporter is a support block; And installed on the upper surface of the support block, to minimize the contact surface with the heating wire to prevent heat loss, the rod-shaped support rods in point contact with the heating wire to prevent brokin of the heating wire supporter due to the high heat of the heating wire can do.
  • the support rod may be the same material as the heating wire.
  • the support rod may be provided long in the direction orthogonal to the longitudinal direction of the heating wire.
  • the heater member may further include a housing provided by the upper wall, the lower wall and side walls so that the inner space in which the heating wire is installed is isolated from the inside of the process chamber.
  • the heater member may further include a supply port provided at the lower wall and supplying a purge gas to the inner space such that process gas does not penetrate into the inner space.
  • the heater member may further include an exhaust port provided on the lower wall and through which the purge gas supplied to the internal space through the supply port is exhausted.
  • the heater member may be formed on the sidewall of the housing, and may include side holes through which the purge gas supplied to the internal space is exhausted.
  • the upper wall may be made of a transparent quartz material capable of passing the radiant heat emitted from the hot wire.
  • a radiant heat transfer space may be formed between the substrate susceptor and the heater member to radiate the heat source of the heating wire in a radiation manner.
  • the housing is provided with an inner space by the upper wall and the lower wall and the side walls to be isolated from the external environment; And a heater member in which heat wires for heating the substrate susceptor in the inner space are arranged in a plurality of rows horizontally and vertically on a concentric circle with the center of the substrate susceptor.
  • the apparatus may further include hot wire supporters for supporting the hot wire to prevent sagging and twisting of the hot wire due to thermal expansion of the hot wire;
  • the hot wire supporter may include a concave support surface formed in a direction orthogonal to the longitudinal direction of the hot wire to ensure fluidity due to thermal expansion of the hot wire.
  • the apparatus may further include hot wire supporters for supporting the hot wire to prevent sagging and twisting of the hot wire due to thermal expansion of the hot wire;
  • the hot wire supporter is a support block; And installed on the upper surface of the support block, to minimize the contact surface with the heating wire to prevent heat loss, the rod-shaped support rods in point contact with the heating wire to prevent brokin of the heating wire supporter due to the high heat of the heating wire can do.
  • the heater member may include a supply port for supplying a purge gas to the inner space such that process gas does not penetrate into the inner space; And an exhaust port through which the purge gas supplied to the internal space through the supply port is exhausted.
  • temperature uniformity can be improved.
  • corrosion of the hot wire by the process gas can be prevented.
  • FIG. 1 is a view for explaining an atomic layer deposition apparatus according to the present invention.
  • FIG. 2a and 2b are a perspective view and a cross-sectional view of the injection member shown in FIG.
  • FIG. 3 is a perspective view of the substrate susceptor shown in FIG. 1.
  • FIG. 4 is a sectional view of principal parts of the substrate processing apparatus for explaining the heater member.
  • FIG. 5 is a view showing hot wires supported by the hot wire supporter.
  • FIG. 6 is a view showing before and after thermal expansion of a heating wire.
  • FIG. 7 is a diagram illustrating another example of the hot wire supporter.
  • FIG. 1 is a view for explaining an atomic layer deposition apparatus according to the present invention.
  • 2a and 2b are a perspective view and a cross-sectional view of the injection member shown in FIG. 3 is a perspective view of the substrate susceptor shown in FIG. 1.
  • an atomic layer deposition apparatus 10 includes a process chamber 100, a substrate susceptor 200 that is a substrate support member, and injection.
  • the member 300, the supply member 400 and the heater member 800 are included.
  • Process chamber 100 is provided with an entrance 112 on one side.
  • the entrance and exit 112 enters and exits the substrates W during the process.
  • the process chamber 100 includes an exhaust duct 120 and an exhaust pipe 114 for exhausting a reaction gas and a purge gas supplied to the process chamber at the lower edge and a reaction dispersion generated during the atomic layer deposition process.
  • the exhaust duct 120 is formed in a ring type located outside the substrate susceptor 200.
  • the injection member 300 injects gas into each of four substrates placed on the substrate susceptor 200.
  • the injection member 300 receives the first and second reaction gases and the purge gas from the supply member 400.
  • the injection member 300 may include a head 310 having first to fourth baffles 320a to 320d for injecting gases provided from the supply member 400 to the entire processing surface of the substrate at positions corresponding to each of the substrates.
  • the shaft 330 is installed to penetrate the upper center of the process chamber 100 and support the head 310.
  • the head 310 has a disk shape, and the first to fourth baffles 320a-320d having independent spaces for accommodating respective gases therein are partitioned at 90 degree intervals from the center of the head 310.
  • the gas outlets 312 are formed on the bottom. Gases provided from the supply member 400 are supplied to the independent spaces of each of the first to fourth baffles 320a to 320d, which are sprayed through the gas ejection ports 312 to be provided to the substrate.
  • the first reaction gas is provided to the first baffle 320a
  • the second reaction gas is provided to the third baffle 320c
  • the second baffle is positioned between the first baffle 320a and the third baffle 320c.
  • the purge gas 320b and the fourth baffle 320d are provided to prevent mixing of the first reaction gas and the second reaction gas and to purge the unreacted gas.
  • the head 310 is formed in a fan shape with the first to fourth baffles 320a to 320d spaced at 90 degree intervals, but the present invention is not limited thereto, and the head 310 is spaced at 45 degree intervals or 180 degree intervals depending on the process purpose or characteristics.
  • the size of each baffle may be configured differently.
  • the supply member 400 includes a first gas supply member 410a, a second gas supply member 410b, and a purge gas supply member 420.
  • the first gas supply member 410a supplies a first reaction gas for forming a predetermined thin film on the substrate w to the first baffle 320a
  • the second gas supply member 410b supplies a second reaction gas.
  • Is supplied to the third baffle 320c, and the purge gas supply member 420 supplies the purge gas to the second and fourth baffles 320b and 320d.
  • the purge gas supply member 420 continuously supplies the purge gas at a constant flow rate, but the first gas supply member 410a and the second gas supply member 410b are operated at high pressure by using high pressure charging tanks (not shown). Charged reaction gas is released in a short time (flash supply method) to diffuse on the substrate.
  • two gas supply members are used to supply two different reaction gases, but it is obvious that a plurality of gas supply members may be applied to supply three or more different reaction gases according to process characteristics. .
  • the substrate susceptor 200 is installed in an internal space of the process chamber 100.
  • the substrate susceptor 200 is a batch type in which four substrates are placed.
  • the substrate susceptor has a disc shape in which first to fourth stages 212a to 212d on which substrates are placed are formed.
  • the first to fourth stages 212a-212d provided in the substrate susceptor may have a circular shape similar to that of the substrate.
  • the first to fourth stages 212a-212d are disposed at intervals of 90 degrees on the concentric circles about the center of the substrate susceptor 200.
  • substrate susceptors 200 may be applied instead of four.
  • the substrate susceptor 200 is rotated by the driver 290 connected to the rotation shaft 280.
  • the driving unit 290 for rotating the substrate susceptor 200 it is preferable to use a stepping motor provided with an encoder capable of controlling the rotation speed and the rotation speed of the driving motor, and one cycle of the injection member 300 by the encoder. Process (first reaction gas-purge gas-second reaction gas-purge gas) time is controlled.
  • the substrate susceptor 200 may be provided with a plurality of lift pins (not shown) for lifting and lowering the substrate W at each stage.
  • the lift pins lift and lower the substrate W to space the substrate W away from the stage of the substrate susceptor 200 or to rest on the stage.
  • FIG. 4 is a sectional view of principal parts of the substrate processing apparatus for explaining the heater member
  • FIG. 5 is a diagram showing a heating wire supported by the heating wire supporter
  • 6 is a view showing before and after thermal expansion of a heating wire.
  • the heater member 800 is positioned below the substrate susceptor 200.
  • the heater member 800 heats the substrate susceptor 200 to raise the temperature of the substrate to a predetermined temperature (process temperature).
  • a few mm of air gap 808 may be provided between the heater member 800 and the substrate susceptor 200.
  • the thermal energy of the heater member may be transmitted to the substrate susceptor in a radiation transfer manner rather than in a conductive manner by the voids, thereby improving temperature uniformity of the substrate susceptor 200.
  • the heater member 800 includes a housing 810, hot wires 820, and hot wire supporters 830.
  • the housing 810 has an interior space 802 that is isolated from the outside environment (the processing space of the process chamber), and the interior space 802 is defined by the top wall 812, the bottom wall 814, and the side walls 816. Is provided.
  • the heating wires 820 are installed in the interior space 802.
  • the upper wall 812 may be made of a transparent quartz material capable of passing radiant heat emitted from the heating wire 820.
  • the lower wall 814 of the housing 810 is provided with a supply port 852 and an exhaust port 854, respectively.
  • the supply port 852 is connected to a supply line 853 for supplying a purge gas.
  • the pressure inside the housing is maintained higher than the process chamber pressure by the purge gas supplied through the supply port 852 to prevent the process gas from penetrating into the interior space of the housing 810 during the process.
  • an exhaust line 855 is connected to the exhaust port 854. The purge gas supplied to the internal space through the supply port 852 is exhausted to the exhaust line 855 through the exhaust port 854.
  • the purge gas exhaust inside the housing 810 may also be made through side holes 858 formed in the side wall 816 in addition to the exhaust port 854.
  • the side holes 858 are connected to the exhaust duct 120.
  • the purge gas may be exhausted through one of the exhaust port 854 and the side holes 858.
  • the heating wires 820 are heating elements for heating the substrate susceptor 200, and are arranged in a plurality of rows horizontally and vertically on a concentric circle with respect to the rotation center of the substrate susceptor 200.
  • the heat wires 820 may be disposed in a plurality of rows horizontally and vertically in the internal space 802 to improve the substrate susceptor 200 temperature decrease due to the increase in the number of substrates and the pumping of the chamber edge.
  • the heating wires 820 are arranged in two rows in the vertical direction and five rows in the horizontal direction.
  • the heater member 800 may maintain the temperature uniformity of the substrate susceptor 200 by allowing the heating wires 820 to be individually controlled for each zone. Zone-specific temperature control of the hot wire 820 may be made according to temperature values of temperature sensors (not shown) installed on the inner surface of the substrate susceptor 200.
  • the hot wire supporters 830 are configured to support the hot wire 820 and are provided to prevent sagging and twisting of the hot wire 820 due to thermal expansion of the hot wire 820.
  • the hot wire supporter 830 may be installed in the hot wire 820 at a predetermined length or at a predetermined angle.
  • the hot wire supporter 830 has a concave support surface 832 formed in a direction orthogonal to the longitudinal direction of the hot wire 820 to secure fluidity due to thermal expansion of the hot wire 820.
  • the length of the support surface 832 may be provided 2-3 times wider than the diameter of the heating wire 820. As shown in FIG. 6, even if the radius of the heating wire becomes wide due to thermal expansion, the heating support 830 stably supports the heating wire 820.
  • FIG. 7 is a diagram illustrating another example of the hot wire supporter.
  • the hot wire supporter 840 includes a support block 842 and a support rod 844 installed on an upper surface of the support block 842.
  • the support rod 844 has a rod shape which is in point contact with the hot wire 820 to minimize the contact surface with the hot wire 820 to prevent heat loss and to prevent brokines of the hot wire supporter 840 due to the high heat of the hot wire.
  • the support rod 844 may be made of the same material as the heating wire 820.

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  • Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
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  • General Chemical & Material Sciences (AREA)
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  • Health & Medical Sciences (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Surface Heating Bodies (AREA)
  • Resistance Heating (AREA)

Abstract

La présente invention se rapporte à un appareil de traitement de substrat. L'appareil de traitement de substrat selon la présente invention comprend : une chambre de traitement ; un suscepteur de substrat, installé dans la chambre de traitement, qui tourne en rapport avec un arbre rotatif, une pluralité de substrats étant disposés sur le même plan de ce dernier ; un élément chauffant situé sur la surface inférieure du suscepteur de substrat ; et un élément de pulvérisation destiné à pulvériser un gaz sur toute la surface de traitement du substrat à une position qui correspond à chaque substrat de la pluralité de substrats disposés sur le suscepteur de substrat, l'élément chauffant comportant un espace interne dans lequel des fils chauds destinés à chauffer le suscepteur de substrat sont agencés selon une pluralité de lignes verticales et horizontales dans un cercle concentrique basé sur l'arbre rotatif du suscepteur de substrat.
PCT/KR2014/002385 2013-09-23 2014-03-21 Élément chauffant et appareil de traitement de substrat comportant ce dernier WO2015041392A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US15/022,729 US20160230282A1 (en) 2013-09-23 2014-03-21 Heater member and substrate processing apparatus having the same
JP2016538486A JP6200092B2 (ja) 2013-09-23 2014-03-21 ヒーター部材及びそれを有する基板処理装置
CN201480052215.6A CN105580127B (zh) 2013-09-23 2014-03-21 加热构件及具有该加热构件的基板处理装置

Applications Claiming Priority (2)

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KR1020130112841A KR101466816B1 (ko) 2013-09-23 2013-09-23 히터 부재 및 그것을 갖는 기판 처리 장치
KR10-2013-0112841 2013-09-23

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JP (1) JP6200092B2 (fr)
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WO (1) WO2015041392A1 (fr)

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US20170353994A1 (en) * 2016-06-06 2017-12-07 Applied Materials, Inc. Self-centering pedestal heater
IT201600099783A1 (it) * 2016-10-05 2018-04-05 Lpe Spa Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati
KR102238016B1 (ko) * 2019-11-07 2021-04-08 주식회사 한화 열 구멍이 마련된 기판 처리 장치
KR102621848B1 (ko) * 2020-12-18 2024-01-09 세메스 주식회사 지지 유닛 및 기판 처리 장치

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JP2002373862A (ja) * 2001-06-15 2002-12-26 Ngk Spark Plug Co Ltd セラミックヒータ
KR20070110736A (ko) * 2006-05-15 2007-11-20 주성엔지니어링(주) 기판 처리 장치
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KR20130007149A (ko) * 2011-06-29 2013-01-18 세메스 주식회사 기판처리장치

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CN105580127A (zh) 2016-05-11
TWI580813B (zh) 2017-05-01
JP6200092B2 (ja) 2017-09-20
KR101466816B1 (ko) 2014-12-10
TW201512450A (zh) 2015-04-01
CN105580127B (zh) 2019-05-21
US20160230282A1 (en) 2016-08-11
JP2016537822A (ja) 2016-12-01

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