WO2021162447A2 - Dispositif de traitement de substrat - Google Patents

Dispositif de traitement de substrat Download PDF

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Publication number
WO2021162447A2
WO2021162447A2 PCT/KR2021/001781 KR2021001781W WO2021162447A2 WO 2021162447 A2 WO2021162447 A2 WO 2021162447A2 KR 2021001781 W KR2021001781 W KR 2021001781W WO 2021162447 A2 WO2021162447 A2 WO 2021162447A2
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WO
WIPO (PCT)
Prior art keywords
showerhead
susceptor
shower head
slide
support member
Prior art date
Application number
PCT/KR2021/001781
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English (en)
Korean (ko)
Other versions
WO2021162447A3 (fr
Inventor
김용기
손성균
허동빈
이태호
Original Assignee
주식회사 유진테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 유진테크 filed Critical 주식회사 유진테크
Publication of WO2021162447A2 publication Critical patent/WO2021162447A2/fr
Publication of WO2021162447A3 publication Critical patent/WO2021162447A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of adjusting a distance between a showerhead and a susceptor.
  • a process of manufacturing a semiconductor device includes a plurality of processes including a thin film deposition process, which is a process of forming a thin film of a predetermined material to form a circuit pattern on the surface of a substrate such as a silicon wafer.
  • a thin film deposition process which is a process of forming a thin film of a predetermined material to form a circuit pattern on the surface of a substrate such as a silicon wafer.
  • the thin film deposition process is a process of introducing a substrate into the chamber, supplying a process gas to the inside of the chamber through a showerhead installed on the substrate, and depositing it on the surface of the substrate.
  • the thickness of the deposited thin film should have uniformity above a certain level regardless of the part of the substrate, but the actually deposited thin film may have uniformity less than a certain level due to deviation depending on the part of the substrate, and the cause is the process
  • Non-uniform supply of gas, temperature deviation of the substrate, asymmetry of the internal space of the chamber, and the like may be mentioned.
  • a substrate processing apparatus includes a susceptor on which a substrate is placed; a showerhead positioned above the susceptor and supplying a process gas toward the susceptor; first and second support members installed on the showerhead to support one side and the other side of the showerhead with respect to the center of the showerhead, respectively; and a first driving unit connected to the first support member to adjust a distance between one side of the shower head and the susceptor.
  • the substrate processing apparatus may include: a first slide fastened to a lower end of the first support member in a ball joint manner and movable in a radial direction of the shower head; And it is installed on one side of the shower head coupled to the first slide, may further include a first guide capable of guiding the movement of the first slide.
  • the substrate processing apparatus may include: a second slide fastened to a lower end of the second support member in a ball joint manner and movable in a radial direction of the shower head;
  • a second guide installed on the other side of the showerhead and coupled to the second slide may further include a second guide capable of guiding the movement of the second slide.
  • the first guide is rotatable with respect to the showerhead.
  • the substrate processing apparatus may include: a chamber providing a process space in which the susceptor and the showerhead are installed; And it may further include a bellows installed between the ceiling surface of the chamber and the shower head to limit the movement of the process gas to the upper portion of the shower head.
  • the shower head may include a plurality of supply holes for supplying the process gas;
  • a supply port communicating with the supply holes to receive the process gas may be provided, and the supply holes may have inner injection holes and outer injection holes arranged with respect to the center of the shower head.
  • a substrate processing apparatus a susceptor on which a substrate is placed; a showerhead positioned above the susceptor and supplying a process gas toward the susceptor; first to third support members installed on the showerhead to support first to third points of the showerhead that are isometrically disposed with respect to the center of the showerhead; a first driving unit connected to the first support member to adjust a distance between the first point of the showerhead and the susceptor; a first slide fastened to a lower end of the first support member in a ball-joint manner and movable along a radial direction of the shower head; and a first guide installed on one side of the showerhead, coupled to the first slide, and capable of guiding the movement of the first slide.
  • the substrate processing apparatus may include: a chamber providing a process space in which the susceptor and the showerhead are installed; And it may further include a bellows installed between the ceiling surface of the chamber and the shower head to limit the movement of the process gas to the upper portion of the shower head.
  • a substrate processing apparatus a susceptor on which a substrate is placed; an inner shower head positioned on the susceptor and supplying a first process gas to the center of the susceptor; an outer shower head positioned above the susceptor and supplying a second process gas to an edge of the susceptor; First to third inner support members installed on the inner side of the shower head to support the first to third points of the inner shower head isometrically arranged with respect to the center of the inner shower head, respectively; a first inner driving unit connected to the first inner support member to adjust the distance between the first point of the inner shower head and the susceptor; a first inner slide fastened to the lower end of the first inner support member in a ball joint manner and movable along the radial direction of the inner shower head; a first inner guide installed on one side of the inner shower head and coupled to the first inner slide, capable of guiding the movement of the first inner slide; First to third outer support members installed on the upper portion of the outer shower head to support the first
  • a substrate processing apparatus a susceptor on which a substrate is placed; first to third showerheads positioned above the susceptor and supplying process gases to first to third regions of the susceptor that are isometrically arranged with respect to the center of the susceptor; first to third support members installed on the first showerhead to support the first to third points of the first showerhead that are isometrically disposed with respect to the center of the first showerhead, respectively; a first driving unit connected to the first support member to adjust a distance between a first point of the first showerhead and the susceptor; a first slide fastened to a lower end of the first support member in a ball-joint manner and movable along a radial direction of the shower head; and a first guide installed on one side of the first showerhead, coupled to the first slide, and capable of guiding the movement of the first slide.
  • the uniformity of the process can be improved by adjusting the distance between the showerhead and the susceptor to change the supply amount or supply direction of the process gas, the supply pressure, and the like.
  • FIG. 1 is a view schematically showing a conventional substrate processing apparatus.
  • FIGS. 2 and 3 are diagrams schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
  • FIGS. 2 and 3 are views showing the slide and guide, the support member and the driving unit shown in FIGS. 2 and 3 .
  • FIG. 5 is a view showing the slide and guide, the support member and the driving unit shown in FIG. 4 .
  • FIG. 6 is a view showing the operation of the showerhead shown in FIG. 2 .
  • FIG. 7 is a view schematically showing a substrate processing apparatus according to another embodiment of the present invention.
  • FIG. 8 is a view schematically showing a substrate processing apparatus according to another embodiment of the present invention.
  • FIG. 1 is a view schematically showing a conventional substrate processing apparatus.
  • a susceptor is installed in the chamber and supported by a support shaft penetrating the lower portion of the chamber, and a substrate to be processed (not shown) is placed on the susceptor.
  • the showerhead is located above the susceptor, and supply holes formed in the showerhead supply the process gas toward the susceptor (or the substrate to be processed).
  • the process gas moves downward toward the susceptor and forms a thin film on the surface of the substrate.
  • the unreacted gas and reaction by-products flow along the edge of the susceptor and move to the exhaust port installed under the susceptor, and an exhaust pump (not shown) is installed in the exhaust port to forcibly discharge unreacted gas and the like.
  • the spraying surface of the showerhead is disposed substantially parallel to the upper surface of the susceptor, and the showerhead and the susceptor are spaced apart from each other at regular intervals. Therefore, the process gas is theoretically supplied to the target substrate at a constant supply amount and constant supply pressure, regardless of the portion of the target substrate, but there may be deviations in the actual supply amount and supply pressure.
  • a heater is installed inside the susceptor to uniformly heat the target substrate to a theoretically constant temperature, but in actual processing the substrate may have a heating deviation depending on the region.
  • the chamber has a passage through which the substrate to be processed can move in and out, and the passage is formed on one side wall of the chamber. Therefore, the inner space of the chamber cannot achieve complete symmetry with respect to the center of the susceptor.
  • the above factors act as factors that hinder the uniform process on the target substrate, which causes the thin film formed on the target substrate to have a thickness deviation depending on the region, resulting in the uniformity being less than a certain level.
  • FIG. 2 and 3 are diagrams schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
  • the chamber provides a process space formed therein, and a susceptor and a showerhead, which will be described later, are installed in the process space.
  • the chamber has a passage (not shown) formed in the sidewall, and the substrate S to be processed moves to the process space through the passage and is placed on the susceptor.
  • the chamber has an exhaust port formed at a lower portion, and may discharge unreacted gas and reaction by-products in the process space through an exhaust pump connected to the exhaust port.
  • the unreacted gas and reaction by-products may flow along the edge of the susceptor and be discharged through the exhaust port.
  • the showerhead is installed on the upper portion of the susceptor, and has a width greater than the width of the susceptor (based on the cross-section).
  • the showerhead has a supply port and a plurality of supply holes (not shown), and the process gas moves into the showerhead through the supply port and then is supplied to the susceptor through the supply holes.
  • the supply holes communicate with the supply port, and may be divided into inner supply holes and outer supply holes, and intermediate supply holes disposed between the inner supply holes and the outer supply holes based on the center of the shower head. That is, the inner supply holes are disposed at positions corresponding to the center of the substrate (or susceptor) to inject the process gas into the center of the substrate, and the outer supply holes are arranged at positions corresponding to the edges of the substrate (or susceptor). to inject the process gas to the edge of the substrate, and the intermediate supply holes are disposed at positions corresponding to the middle (between the center and the edge) of the substrate (or susceptor) to inject the process gas to the middle of the substrate.
  • the shower head is supported through a plurality of supporting members, and the driving motor (or driving unit) moves the supporting member in the vertical direction (or the longitudinal direction of the supporting member) to form a susceptor and The distance between the showerheads can be adjusted.
  • FIG. 4 is a view showing the slide and guide, support member and driving unit shown in FIGS. 2 and 3
  • FIG. 5 is a view showing the slide and guide, support member and driving unit shown in FIG. 4 .
  • the first to third guides are respectively installed at the first to third points (123) of the upper surface of the showerhead, and the first to third points (123) are equiangular (for example, 120 degrees) can be arranged.
  • the first to third points may be arranged on concentric circles with respect to the center of the showerhead.
  • the first to third slides are respectively coupled to the first to third guides, and as shown in FIG. 4 , the first to third guides have the first to third slides in the radial direction (X1, X2, It guides you to move to X3). 5, since the lower end of the support member is fastened to the slide in a ball joint manner, the support member can rotate in the ⁇ direction and the ⁇ direction.
  • FIG. 6 is a view showing the operation of the showerhead shown in FIG. 2 .
  • the X-direction (X1, X2, X3) movement of the first to third slides and the ⁇ -direction/ ⁇ -direction rotation of the support member provide degrees of freedom due to the Y-direction movement of the support member.
  • the operation of the shower head will be described with reference to FIG. 6 .
  • the thin film formed on the substrate to be processed has a thickness deviation depending on the region, and when the uniformity does not reach a certain level, it is necessary to improve the uniformity by correcting this, and Uniformity can be improved by tilting the showerhead (tilting) or bringing it closer to the susceptor by adjusting the distance between the scepters.
  • the spraying surface (the surface opposite to the susceptor) of the first showerhead is the susceptor's It may be disposed parallel to the upper surface (or substrate) (refer to FIG. 2 ).
  • the second 1 By moving the support member, the distance between the first point of the showerhead and the susceptor can be adjusted to be close, and through this, the thickness of the thin film can be increased by increasing the supply amount of process gas to the portion of the substrate corresponding to the first point.
  • the shower head is tilted, and not only the angle between the first support member and the shower head, but also the second and The angle formed by the third support member and the shower head is different, and the first to third support members may be rotated in the ⁇ direction/ ⁇ direction.
  • the first to third slides may move in the X direction along the first to third guides. That is, the X-direction movement of the first to third guides as well as the ⁇ -direction/ ⁇ -direction rotation of the support member corresponds to the follow-up according to the movement of the first to third support members.
  • At least one of the first to third guides may be installed to be rotatable around the first to third points (123), and in this case, the first to third guides move in the moving direction of the first to third slides. can be switched in a direction other than the radial direction (X direction). That is, the degree of freedom of the first to third slides can be greatly increased through the rotation of the first to third guides.
  • the moving directions of the first to third slides are aligned in one direction, and the first to third slides are moved by the weight of the showerhead so that the showerhead moves to one side. Since it may be tilted, some of the first to third slides need to remain non-rotatable.
  • the showerhead is tilted to one side. can solve the problem
  • the first support member is raised and the second and third support members are lowered to form a gap between the first point of the showerhead and the susceptor. It is possible to increase the distance, thereby reducing the thickness of the thin film by reducing the supply amount of the process gas to the portion of the substrate corresponding to the first point.
  • the first to third support members move in the ⁇ direction. It can rotate in the / ⁇ direction, and the first to third slides can move along the first to third guides in a radial direction or in a direction different from the radial direction.
  • the bellows may be installed between the ceiling surface of the chamber and the showerhead, and blocks the process space from the outside to prevent the reaction gas in the process space from leaking to the outside and prevent the slide and guide from being exposed to the reaction gas.
  • the shower head may include an inner shower head for supplying a process gas to the center of the susceptor, and an outer shower head for supplying a process gas to the edge of the susceptor, as described above. , it is possible to tilt the inner shower head/outer shower head or approach/separate the susceptor from each other through the support member/drive unit/slide/guide.
  • the showerhead includes a first showerhead supplying a process gas to a first region of the susceptor, a second showerhead supplying a process gas to a second region of the susceptor, and a second showerhead of the susceptor.
  • a third showerhead for supplying a process gas to the three regions may be provided, and as described above, the first to third showerheads are tilted through the support member/drive unit/slide/guide, respectively, or approach the susceptor/ can be separated.
  • the present invention can be applied to various types of semiconductor manufacturing equipment and manufacturing methods.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Selon un mode de réalisation de la présente invention, un dispositif de traitement de substrat comprend : un suscepteur sur lequel un substrat est placé; une pomme de douche située au-dessus du suscepteur et envoyant un gaz de traitement vers le suscepteur; des premier et second éléments de support qui sont installés au-dessus de la pomme de douche et supportent respectivement un côté et l'autre côté de la pomme de douche par rapport au centre de la pomme de douche; et une première unité d'entraînement qui est reliée au premier élément de support et qui peut régler la distance entre le côté de la pomme de douche et le suscepteur.
PCT/KR2021/001781 2020-02-13 2021-02-10 Dispositif de traitement de substrat WO2021162447A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0017833 2020-02-13
KR1020200017833A KR102355932B1 (ko) 2020-02-13 2020-02-13 기판 처리 장치

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WO2021162447A2 true WO2021162447A2 (fr) 2021-08-19
WO2021162447A3 WO2021162447A3 (fr) 2021-10-07

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115354310A (zh) * 2022-09-29 2022-11-18 江苏邑文微电子科技有限公司 一种等离子增强化学气相沉积装置及其沉积方法

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KR20230059286A (ko) 2021-10-26 2023-05-03 주식회사 한화 기판 처리용 공정 챔버 및 반응가스 분사용 샤워헤드
KR20230064110A (ko) 2021-11-03 2023-05-10 주식회사 한화 샤워 헤드 및 이를 포함하는 기판 처리 장치

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JP2005039123A (ja) * 2003-07-17 2005-02-10 Renesas Technology Corp 化学気相成長装置
KR20100039980A (ko) * 2008-10-09 2010-04-19 주식회사 동부하이텍 반도체 제조장비의 샤워헤드와 히터블록간의 간격조정장치
KR20110076386A (ko) * 2009-12-29 2011-07-06 세메스 주식회사 반도체 제조에 사용되는 원자층 증착 장치
US8741288B2 (en) 2010-07-07 2014-06-03 Chang Gung Medical Foundation, Linkou Branch Protein markers for detecting liver cancer and method for identifying the markers thereof
KR101435100B1 (ko) * 2012-06-20 2014-08-29 주식회사 엠티에스나노테크 원자층 증착 장치
KR102112130B1 (ko) * 2013-10-23 2020-05-19 주식회사 디엠에스 샤워헤드 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115354310A (zh) * 2022-09-29 2022-11-18 江苏邑文微电子科技有限公司 一种等离子增强化学气相沉积装置及其沉积方法
CN115354310B (zh) * 2022-09-29 2022-12-30 江苏邑文微电子科技有限公司 一种等离子增强化学气相沉积装置及其沉积方法

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KR102355932B1 (ko) 2022-01-27
KR20210103278A (ko) 2021-08-23

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