WO2021162447A3 - Dispositif de traitement de substrat - Google Patents

Dispositif de traitement de substrat Download PDF

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Publication number
WO2021162447A3
WO2021162447A3 PCT/KR2021/001781 KR2021001781W WO2021162447A3 WO 2021162447 A3 WO2021162447 A3 WO 2021162447A3 KR 2021001781 W KR2021001781 W KR 2021001781W WO 2021162447 A3 WO2021162447 A3 WO 2021162447A3
Authority
WO
WIPO (PCT)
Prior art keywords
shower head
susceptor
processing device
substrate processing
substrate
Prior art date
Application number
PCT/KR2021/001781
Other languages
English (en)
Korean (ko)
Other versions
WO2021162447A2 (fr
Inventor
김용기
손성균
허동빈
이태호
Original Assignee
주식회사 유진테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 유진테크 filed Critical 주식회사 유진테크
Publication of WO2021162447A2 publication Critical patent/WO2021162447A2/fr
Publication of WO2021162447A3 publication Critical patent/WO2021162447A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Selon un mode de réalisation de la présente invention, un dispositif de traitement de substrat comprend : un suscepteur sur lequel un substrat est placé; une pomme de douche située au-dessus du suscepteur et envoyant un gaz de traitement vers le suscepteur; des premier et second éléments de support qui sont installés au-dessus de la pomme de douche et supportent respectivement un côté et l'autre côté de la pomme de douche par rapport au centre de la pomme de douche; et une première unité d'entraînement qui est reliée au premier élément de support et qui peut régler la distance entre le côté de la pomme de douche et le suscepteur.
PCT/KR2021/001781 2020-02-13 2021-02-10 Dispositif de traitement de substrat WO2021162447A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020200017833A KR102355932B1 (ko) 2020-02-13 2020-02-13 기판 처리 장치
KR10-2020-0017833 2020-02-13

Publications (2)

Publication Number Publication Date
WO2021162447A2 WO2021162447A2 (fr) 2021-08-19
WO2021162447A3 true WO2021162447A3 (fr) 2021-10-07

Family

ID=77292429

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2021/001781 WO2021162447A2 (fr) 2020-02-13 2021-02-10 Dispositif de traitement de substrat

Country Status (2)

Country Link
KR (1) KR102355932B1 (fr)
WO (1) WO2021162447A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102673266B1 (ko) 2021-10-07 2024-06-11 (주)한화 분체용기용 파손 검사장치, 이를 포함하는 분체용기의 분류 시스템 및 분체용기의 분류 방법
KR20230059286A (ko) 2021-10-26 2023-05-03 주식회사 한화 기판 처리용 공정 챔버 및 반응가스 분사용 샤워헤드
KR20230064110A (ko) 2021-11-03 2023-05-10 주식회사 한화 샤워 헤드 및 이를 포함하는 기판 처리 장치
CN115354310B (zh) * 2022-09-29 2022-12-30 江苏邑文微电子科技有限公司 一种等离子增强化学气相沉积装置及其沉积方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005039123A (ja) * 2003-07-17 2005-02-10 Renesas Technology Corp 化学気相成長装置
KR20100039980A (ko) * 2008-10-09 2010-04-19 주식회사 동부하이텍 반도체 제조장비의 샤워헤드와 히터블록간의 간격조정장치
KR20110076386A (ko) * 2009-12-29 2011-07-06 세메스 주식회사 반도체 제조에 사용되는 원자층 증착 장치
KR20140061330A (ko) * 2012-06-20 2014-05-21 주식회사 엠티에스나노테크 원자층 증착 장치
KR20150047654A (ko) * 2013-10-23 2015-05-06 주식회사 디엠에스 샤워헤드 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8741288B2 (en) 2010-07-07 2014-06-03 Chang Gung Medical Foundation, Linkou Branch Protein markers for detecting liver cancer and method for identifying the markers thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005039123A (ja) * 2003-07-17 2005-02-10 Renesas Technology Corp 化学気相成長装置
KR20100039980A (ko) * 2008-10-09 2010-04-19 주식회사 동부하이텍 반도체 제조장비의 샤워헤드와 히터블록간의 간격조정장치
KR20110076386A (ko) * 2009-12-29 2011-07-06 세메스 주식회사 반도체 제조에 사용되는 원자층 증착 장치
KR20140061330A (ko) * 2012-06-20 2014-05-21 주식회사 엠티에스나노테크 원자층 증착 장치
KR20150047654A (ko) * 2013-10-23 2015-05-06 주식회사 디엠에스 샤워헤드 장치

Also Published As

Publication number Publication date
KR102355932B1 (ko) 2022-01-27
KR20210103278A (ko) 2021-08-23
WO2021162447A2 (fr) 2021-08-19

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