WO2014193138A1 - Dispositif de support de substrat et dispositif de traitement de substrat le comprenant - Google Patents

Dispositif de support de substrat et dispositif de traitement de substrat le comprenant Download PDF

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Publication number
WO2014193138A1
WO2014193138A1 PCT/KR2014/004707 KR2014004707W WO2014193138A1 WO 2014193138 A1 WO2014193138 A1 WO 2014193138A1 KR 2014004707 W KR2014004707 W KR 2014004707W WO 2014193138 A1 WO2014193138 A1 WO 2014193138A1
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WO
WIPO (PCT)
Prior art keywords
bushing
substrate
hole
susceptor
lift pin
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PCT/KR2014/004707
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English (en)
Korean (ko)
Inventor
최종성
권봉성
유지환
이명진
정석철
Original Assignee
주성엔지니어링(주)
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Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Publication of WO2014193138A1 publication Critical patent/WO2014193138A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C29/00—Bearings for parts moving only linearly
    • F16C29/02—Sliding-contact bearings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate supporting apparatus capable of preventing breakage of a plurality of lift pins supporting a substrate and a substrate processing apparatus including the same.
  • a flat panel display panel, a solar cell, a predetermined circuit pattern or an optical pattern must be formed on a surface of a substrate, and for this, a thin film deposition process of depositing a thin film of a specific material on a substrate.
  • a substrate treatment process may be performed such as a photo process that selectively exposes the thin film using a photosensitive material, and an etching process that forms a pattern by removing the thin film of the selectively exposed region.
  • the substrate treatment process is performed in a process chamber, and the process chamber is provided in a substrate support apparatus for supporting a substrate such as a glass substrate or a semiconductor wafer.
  • the substrate supporting apparatus is inserted perpendicularly to a susceptor for supporting the substrate and a pin insertion hole formed to penetrate the susceptor, thereby seating the substrate on the susceptor or seated on the susceptor.
  • a plurality of lift pins are provided for raising the substrate to the substrate loading / unloading position.
  • FIG. 1 is a view for explaining a substrate processing process using a conventional substrate support apparatus.
  • each of the plurality of lift pins 40 is spaced apart from the upper surface of the susceptor 20 by lowering the susceptor 20 to a predetermined height.
  • the substrate S is loaded into the process chamber and seated on the plurality of lift pins 40.
  • each of the plurality of lift pins 40 is inserted into a pin insertion hole formed in the upper surface of the susceptor 20.
  • a substrate treatment process such as a thin film deposition or etching process on the substrate S mounted on the susceptor 20 is performed.
  • the susceptor 20 is lowered to seat the substrate S seated on the susceptor 20 on the plurality of lift pins 40, and then the plurality of lifts.
  • substrate S mounted on the pin 40 is conveyed to the exterior of a process chamber.
  • the lift pin 40 is often broken or broken due to the repeated lifting of the susceptor 20. That is, the lift pin 40 is inclined in a diagonal direction in the state of being inserted into the pin insertion hole of the susceptor 20 without maintaining a vertical state according to the load and / or bending of the substrate S, When the susceptor 20 moves up and down in this state, a momentary shear force is generated by friction with the inner wall of the pin insertion hole, thereby causing the lift pin 40 to be broken or broken. As such, when the lift pin 40 is damaged, productivity must be stopped in order to replace the damaged lift pin 40, and thus productivity is lowered, and the substrate S supported by the lift pin 40 is damaged. There is a problem that can be broken or broken.
  • the present invention has been made to solve the above-described problem, and to provide a substrate supporting apparatus capable of preventing breakage of a plurality of lift pins supporting a substrate and a substrate processing apparatus including the same.
  • the substrate support apparatus for achieving the above technical problem is a susceptor on which the substrate is seated; A lift pin installed to vertically penetrate the susceptor to support the substrate; And a bushing installed in the susceptor to insert the lift pin, wherein the bushing includes a self-lubricating material to prevent damage to the lift pin.
  • the substrate processing apparatus for achieving the above technical problem is a process chamber for providing a process space; Substrate support means disposed in the process chamber to support a substrate; And gas injection means installed in the process chamber so as to face the susceptor and injecting a process gas to the substrate, wherein the substrate support means may include the substrate support device.
  • the substrate supporting apparatus and the substrate processing apparatus including the same according to the present invention have the following effects.
  • the lift pins are held vertically by a bushing made of a self-lubricating material installed on the susceptor, and the lifting of the susceptor is guided, thereby preventing or minimizing the breakage of the lift pins caused by the repeated lifting of the susceptor. have.
  • the productivity of the substrate processing apparatus can be improved because breakage of the lift pins is prevented or minimized, thereby extending the replacement cycle of the lift pins and bushings.
  • FIG. 1 is a view for explaining a substrate processing process using a conventional substrate support apparatus.
  • FIG. 2 is a cross-sectional view illustrating a substrate support apparatus according to an exemplary embodiment of the present invention.
  • FIG. 3 shows the bushing shown in FIG. 2.
  • FIG. 4 is a cross-sectional view for describing a substrate supporting apparatus according to another exemplary embodiment of the present invention.
  • FIG. 5 shows the bushing shown in FIG. 4.
  • FIG. 6 is a view for explaining a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating a substrate support apparatus according to an exemplary embodiment of the present invention
  • FIG. 3 is a view illustrating a bushing illustrated in FIG. 2.
  • the substrate support apparatus 100 includes a susceptor 120, a plurality of lift pins 140, a plurality of bushings 160, and It may be configured to include a plurality of pin holder bracket 180.
  • the susceptor 120 is mounted on the inner bottom surface of a process chamber (not shown) for performing a substrate processing process to support the substrate S.
  • the susceptor 120 may be formed of a metal material, for example, aluminum (Al), and in some cases, a heater (not shown) for heating the substrate may be embedded.
  • the susceptor 120 is formed with a plurality of vertical holes 121 through which the plurality of lift pins 140 are vertically inserted.
  • Each of the plurality of vertical holes 121 may include a bushing installation hole 121a, a pin seating hole 121b, and a stepped ring 121c.
  • the bushing installation hole 121a is formed concave to have a first height and a first diameter from a lower surface of the susceptor 120.
  • the pin seating hole 121b is recessed to have a second height and a second diameter from an upper surface of the susceptor 120.
  • the second height may be relatively lower than the first height.
  • the stepped ring 121c forms an upper surface of the bushing mounting hole 121a and a bottom surface of the pin seating hole 121b, and is formed between the bushing mounting hole 121a and the pin seating hole 121b. It is formed to 3 heights.
  • the lift pin 140 is inserted into the stepped ring 121c and penetrates through the stepped ring 121c.
  • the thickness of the susceptor 120 may be the sum of the first to third heights.
  • Each of the plurality of lift pins 140 is installed to vertically penetrate the susceptor 120 to support the substrate S transported onto the susceptor 120.
  • Each of the plurality of lift pins 140 may include a pin supporter 142 and a pin head portion 144.
  • the pin support 142 is formed in a " ⁇ " shape to have a length relatively longer than the thickness of the susceptor 120 is inserted into the vertical hole 121 formed in the susceptor 120.
  • the lower surface of the pin support 142 may be fixed to a weight member (or weight) having a fixed weight fixed to the inner bottom surface of the process chamber or placed on the inner bottom surface of the process chamber.
  • the pin support 142 may be made of a ceramic material such as alumina (Al 2 O 3 ), but is not limited thereto and may be made of the same material as the susceptor 120.
  • the pin head portion 144 is coupled to the upper surface of the pin support 142 serves to support the substrate (S).
  • the pin head 144 may be formed in a disc or polygonal plate having a predetermined thickness, and may be made of the same material as the pin support 142 or a material having a higher thermal conductivity than the pin support 142.
  • the pin head portion 144 protrudes a predetermined height from the upper surface of the susceptor 120 when the susceptor 120 is lowered, and when the susceptor 120 rises, The pin is inserted into the pin seating hole 121b and seated on the stepped ring 121c.
  • the pin support 142 and the pin head portion 144 may be formed of one body so as to have a " ⁇ " shape made of the same material.
  • Each of the plurality of lift pins 140 may not include the pin head portion 144 described above, but may include only the pin support 142.
  • Each of the plurality of bushings 160 is installed in the vertical hole 121 of the susceptor 120 so that the lift pin 140 is inserted therethrough.
  • Each of the plurality of bushings 160 is configured to include a self-lubricating material to guide the lifting of the susceptor 120 that is repeatedly lifted. That is, each of the plurality of bushings 160 minimizes the friction between the lift pin 140 and the lifting susceptor 120 which are positioned in the vacuum and high temperature environment in the process chamber to minimize the friction of the lift pin 140 due to the friction. Prevent or minimize breakage.
  • each of the plurality of bushings 160 is a self-lubricating material, and has a continuous use temperature of 170 ° C to 310 ° C, or a continuous use temperature of 170 ° C to 310 ° C and a friction coefficient of 0.05 to 0.5. It may be configured to include a self-lubricating material having.
  • Each of the plurality of bushings 160 may include a main bushing 210, an upper guide bushing 220, and a lower guide bushing 230 formed to penetrate the lift pin 140, that is, the pin support 142. It is configured to include).
  • the main bushing 210 may be formed in a tubular shape made of a metal material such as aluminum (Al) or a ceramic material such as alumina (Al 2 O 3 ).
  • the main bushing 210 may be formed in a tubular shape having a main bushing hole 211 to include an upper body 213, a lower body 215, and a bushing fixing part 217.
  • the main bushing hole 211 is formed to have a diameter larger than the diameter of the lift pin 140, that is, the pin support 142 does not contact the lift pin 140.
  • the upper body 213 is an upper region of the main bushing 210 and is coupled to the upper guide bushing 220 and is formed on a lower surface of the susceptor 120 in a state of being coupled to the upper guide bushing 220. It is inserted into the bushing installation hole 121a.
  • the upper male thread mountain 213a having a diameter smaller than the diameter of the upper body 213 is formed on the upper portion of the upper body 213.
  • the lower body 215 is a lower region of the main bushing 210 and is coupled to the lower guide bushing 230 and protrudes from the lower surface of the susceptor 120 in a state of being coupled with the lower guide bushing 230.
  • the lower male thread mountain 215a having a diameter smaller than the diameter of the lower body 215 is formed below the lower body 215.
  • the bushing fixing part 217 is formed to protrude between the upper body 213 and the lower body 215 to have a diameter and a constant height larger than the diameter of the upper body 213 and the lower body 215. do.
  • the upper surface of the bushing fixing part 217 is in contact with or coupled to the lower surface of the susceptor 120 to limit the insertion depth of the upper body 213 inserted into the bushing mounting hole 121a or the bushing mounting hole. The separation of the main bushing 210 inserted into 121a is prevented.
  • the main bushing 210 is inserted into and installed in the bushing installation hole 121a.
  • An O-ring or the like is provided between the outer circumferential surface of the main bushing 210 and the bushing installation hole 121a.
  • the first sealing member 240 may be interposed.
  • a first sealing member mounting groove 219 is formed on the outer circumferential surface of the main bushing 210 to be provided in the first sealing member 240.
  • the upper guide bushing 220 is formed in a tubular shape made of a material different from the main bushing 210 to be coupled to an upper portion of the main bushing 210, that is, an upper portion of the upper body 213, and the main bushing ( It is inserted into the bushing installation hole 121a formed in the lower surface of the susceptor 120 in a state coupled to 210. Accordingly, the upper guide bushing 220 serves to maintain the lift pin 140 in a vertical state and guide the lifting and lowering of the susceptor 120.
  • the upper guide bushing 220 is the lift while minimizing the generation of the instantaneous shear force caused by the friction between the lift pin 140 and the lifting susceptor 120 fixed in the vacuum and high temperature environment in the process chamber
  • By maintaining the pin 140 in a vertical state is formed of a self-lubricating material that can smoothly guide the lifting of the susceptor 120.
  • the upper guide bushing 220 is formed of a self-lubricating material having a continuous use temperature of 170 ° C ⁇ 310 ° C or a continuous use temperature of 170 ° C ⁇ 310 ° C and a friction coefficient of 0.05 ⁇ 0.5, for example
  • the engineering plastic material may be made of a material of self-lubricating PTFE (polytetrafluoroethylene), PI (polyimid), PEI (polyetherimide), PBI (Polybenzimidazole), PAI (PolyAmide Imide), or PEEK (polyetheretherketone).
  • An upper through hole 221, an upper guide hole 223, and an upper female threaded mountain 225 are formed in the upper guide bushing 220.
  • the upper through hole 221 is formed to vertically penetrate the upper guide bushing 220, and has a diameter relatively larger than the diameter of the pin support 142 of the lift pin 140.
  • the upper guide hole 223 is formed from the inner wall of the upper through hole 221 to have a diameter equal to the diameter of the pin support 142 of the lift pin 140 based on the center of the upper through hole 221. Protruding toward the center of the upper through-hole 221 is formed.
  • the inner wall of the upper guide hole 223 may be formed in a line or surface shape. Accordingly, the inner wall of the upper guide hole 223 maintains the lift pin 140 in a vertical state by making line contact or surface contact with the outer circumferential surface of the lift pin 140 to be inserted and lifting the susceptor 120. Guide.
  • the upper female thread 225 is formed on the lower inner surface of the upper guide bushing 220 to be screwed to the upper male thread 213a.
  • the upper guide bushing 220 is inserted into and installed in the bushing mounting hole 121a.
  • An O-ring is formed between the outer circumferential surface of the upper guide bushing 220 and the bushing mounting hole 121a.
  • a second sealing member 250 such as the like may be interposed.
  • a second sealing member mounting groove 227 provided in the second sealing member 250 is formed on the outer circumferential surface of the upper guide bushing 220.
  • the lower guide bushing 230 is formed in a tubular shape made of a material different from that of the main bushing 210 to be coupled to a lower portion of the main bushing 210, that is, an upper portion of the lower body 215, and the main bushing ( In the state coupled to the 210 protrudes to the lower surface of the susceptor 120 together with the lower body 215 of the main bushing (210).
  • the lower guide bushing 230 is formed of a self-lubricating material having a continuous use temperature of 170 ° C ⁇ 310 ° C or a continuous use temperature of 170 ° C ⁇ 310 ° C and a friction coefficient of 0.05 ⁇ 0.5, for example, engineering Among the plastic materials, polytetrafluoroethylene (PTFE), polyimide (PI), polyetherimide (PEI), polybenzimidazole (PBI), polyamide imide (PAI), polyetheretherketone (PEI), or the same material as the upper guide bushing 220 having self-lubricating properties. It may be formed of, or may be formed of a material different from the upper guide bushing 220 of the engineering plastic material having the self-lubrication.
  • PTFE polytetrafluoroethylene
  • PI polyimide
  • PEI polyetherimide
  • PBI polybenzimidazole
  • PAI polyamide imide
  • PEI polyetheretherketone
  • the upper guide bushing 220 and the lower guide bushing 230 are formed of different materials among the materials, the upper guide bushing 220 is relatively frictional than the lower guide bushing 230 among the materials. It is more preferable that it is formed of a material having a low coefficient and a high continuous use temperature. That is, when the lift pin 140 is inclined in the diagonal direction based on the vertical direction Z without being maintained in the vertical state, the lift pin inclined at the upper guide bushing 220 rather than the lower guide bushing 230.
  • the upper guide bushing 220 is preferably formed of the above-described self-lubricating material having a relatively higher coefficient of friction and continuous use temperature than the lower guide bushing 230.
  • a lower through hole 231, a lower guide hole 233, and a lower female threaded mountain 235 are formed in the lower guide bushing 230.
  • the lower through hole 231 is formed to vertically penetrate the lower guide bushing 230, and has a diameter relatively larger than the diameter of the pin support 142 of the lift pin 140.
  • the lower guide hole 233 is formed from the inner wall of the lower through hole 231 to have a diameter equal to the diameter of the pin support 142 of the lift pin 140 with respect to the center of the lower through hole 231. Protruding toward the center of the lower through-hole 231 is formed.
  • the inner wall of the lower guide hole 233 may be formed in a line or surface shape.
  • the lower guide hole 233 maintains the lift pin 140 in a vertical state by linearly or in surface contact with an outer circumferential surface of the lift pin 140 inserted into the lower through hole 231. Guide the ascent of 120).
  • the lower female thread mount 235 is formed on the lower inner surface of the lower guide bushing 230 to be screwed to the lower male thread mount 215a.
  • Each of the plurality of pin holder brackets 180 is coupled to a bottom surface of the susceptor 120 so as to surround a side surface of the bushing 160 inserted into the bushing installation hole 121a of the susceptor 120 and the bushing ( By fixing the position of the 160, the lift pin 140 protruding through the bushing 160 to the lower surface of the susceptor 120 is maintained in a vertical state.
  • each of the plurality of pin holder brackets 180 may be coupled to the bottom surface of the susceptor 120 by a plurality of screws or bolts.
  • Each of the plurality of pin holder brackets 180 may include a bushing insertion hole 182 and a bushing fixing groove 184.
  • the bushing insertion hole 182 is formed to penetrate the pin holder bracket 180 in the vertical direction to insert the lower body 215 and the lower guide bushing 230 of the main bushing 210.
  • the bushing fixing groove 184 is formed to be concave to a certain depth from the upper surface of the pin holder bracket 180 to have a diameter corresponding to the diameter of the bushing fixing portion 217 formed in the main bushing 210. .
  • the bushing fixing part 217 of the main bushing 210 inserted into the bushing insertion hole 182 is inserted into the bushing fixing groove 184.
  • a portion which is not in contact with the lift pin 140 is formed of a material such as aluminum (Al), and a portion which is in contact with the lift pin 140 is magnetic.
  • the lift pin 140 is maintained in a vertical state by the bushing 160 including a lubricity material, and the lift pin 140 is guided by the lifting and lowering of the susceptor 120. Breakage of 140 can be prevented or minimized.
  • FIG. 4 is a cross-sectional view illustrating a substrate support apparatus according to another exemplary embodiment of the present invention
  • FIG. 5 is a view illustrating a bushing illustrated in FIG. 4, which changes a structure of a bushing. Accordingly, only the bushing will be described below.
  • the bushing 360 may include a main bushing 410 and an upper guide bushing 420.
  • the main bushing 410 may be formed in a tubular shape made of a metal material such as aluminum (Al) or a ceramic material such as alumina (Al 2 O 3 ).
  • the main bushing 410 according to an embodiment may be formed in a tubular shape having a main bushing hole 411 to include an upper body 413, a lower body 415, and a bushing fixing part 417.
  • the main bushing hole 411 is formed to have a diameter larger than the diameter of the lift pin 140, that is, the pin support 142.
  • the main bushing 410 has no male thread formed at each of the upper and lower portions of the upper body 413 and the lower portion of the lower body 415, and each of the upper body 413 and the lower body 415 has a cylindrical tube shape. Except for being formed, since it has the same structure as the main bushing 210 shown in FIG. 3, redundant description thereof will be omitted.
  • the upper guide bushing 420 is inserted into the main bushing hole 411 of the main bushing 410, and the bushing installation hole formed on the lower surface of the susceptor 120 in the state of being inserted into the main bushing 410. It is inserted in 121a. Accordingly, the upper guide bushing 420 serves to maintain the lift pin 140 in a vertical state and guide the lifting and lowering of the susceptor 120.
  • the upper guide bushing 420 is formed of the same material as the upper guide bushing 220 described above with reference to FIGS. 2 and 3.
  • the upper guide bushing 420 is formed to include a bushing support 422, a bushing head 424, and a pin insertion hole 426, and the pin insertion hole 426 is vertically formed by a “T”. "Shaped in the form of a tube.
  • the bushing support 422 is formed in a cylindrical shape to have a diameter that can be inserted into the main bushing hole 411 of the main bushing 410.
  • the bushing head part 424 is coupled to an upper surface of the bushing support 422 and seated on an upper surface of the main bushing 410.
  • the pin insertion hole 426 is formed to vertically penetrate the center portion of the bushing head 424 and the bushing support 422, and has the same diameter as the pin support 142 of the lift pin 140 described above. It is formed to have.
  • the upper guide bushing 420 is disposed between the main bushing hole 411 of the main bushing 410 and the pin support 142 of the lift pin 140 to move the lift pin 140 in a vertical state. Maintaining and guiding the lifting of the susceptor 120 prevents the lift pin 140 from being damaged due to the lifting of the susceptor 120.
  • the lift pin 140 is maintained in a vertical state by a bushing 360 made of different materials, and the lifting of the susceptor 120 is performed. By being guided, breakage of the lift pins 140 generated by the repetitive lifting of the susceptor 120 may be prevented or minimized.
  • the bushings 160 and 360 may be modified in various forms while including the aforementioned self-lubricating material.
  • the bushing according to the present invention comprises the main bushing 210, the upper guide bushing 220, and the lower guide bushing 230 shown in FIG. 3, all of which are made of the above-described self-lubricating material. It may be formed, and further may be formed as a single body.
  • the bushing according to the present invention may be composed of only the main bushing 210 and the upper guide bushing 220 shown in FIG.
  • both the main bushing 210 and the upper guide bushing 220 may be formed of the above-described self-lubricating material, and may be formed of one body.
  • the bushing according to the present invention is a coating layer coated with the aforementioned self-lubricating material on the inner diameter of the main bushing 410 and the main bushing hole 411 of the main bushing 410 ( It may be configured to include.
  • the main bushing 410 may be formed of aluminum (Al) -based material.
  • FIG. 6 is a view for explaining a substrate processing apparatus according to an embodiment of the present invention.
  • a substrate processing apparatus includes a process chamber 510, a substrate supporting means 520, and a gas ejecting means 530.
  • the process chamber 510 provides a process space for performing a chemical vapor deposition process, and may include a lower chamber 512 and an upper chamber 514.
  • the lower chamber 512 is formed in a “U” shape with an upper opening.
  • One side of the lower chamber 512 is formed with a substrate entrance (not shown) through which the substrate enters and exits, and an exhaust port for exhausting gas from the process space is formed at one side of the bottom surface.
  • the upper chamber 514 is installed on the lower chamber 512 to cover the upper portion of the lower chamber 512.
  • an insulating member such as an O-ring is interposed between the lower chamber 512 and the upper chamber 514 to electrically connect the lower chamber 512 and the upper chamber 514. Are separated from each other.
  • the substrate supporting means 520 is provided to be elevated in the lower chamber 512 of the process chamber 510 to support the substrate S carried into the process space by a substrate transfer device (not shown).
  • the substrate supporting means 520 is a substrate supporting apparatus 100 according to the embodiments of the present invention illustrated in FIGS. 2 to 5, and includes a susceptor 120, a plurality of lift pins 140, and a plurality of substrate supporting apparatuses 520.
  • Bushing (160, 360), and a plurality of pin holder bracket 180 is configured to include, duplicate description thereof will be omitted.
  • the susceptor 120 of the substrate supporting means 520 is supported to be liftable by the lifting shaft 522 penetrating the bottom surface of the lower chamber 512.
  • the lifting shaft 522 is sealed by the bellows 524 and is lifted according to the driving of the lifting device (not shown).
  • the gas injection means 530 is installed in the upper chamber 514 of the process chamber 510 to communicate with the gas supply pipe 532 passing through the upper chamber 514. In order to form a predetermined thin film on the substrate S, the gas injection means 530 uniformly diffuses the process gas supplied through the gas supply pipe 532 and injects onto the substrate S.
  • a DC power source, an AC power source, or a high frequency power source may be applied to the gas injection unit 530 according to the thin film deposition process by the process gas.
  • each of the plurality of lift pins 140 inserted into each of the plurality of bushings 160 and 360 installed in the susceptor 120 and vertically coupled to the lower chamber 512 may have an upper surface of the susceptor 120. Protrude from a certain height.
  • the substrate S is carried into the process space of the process chamber 510 and seated on the fin head of each of the plurality of lift pins 140.
  • the lifting shaft 522 is raised to raise the susceptor 120 to the process position. Accordingly, the susceptor 120 rises as the lifting shaft 522 rises and rises to the process position while supporting the substrates S supported by the pin heads of the plurality of lift pins 140. At this time, each of the pin head portions of the plurality of lift pins 140 is inserted into the pin seating holes of the susceptor 120.
  • a vacuum atmosphere is formed in the process chamber 510, and a thin film is deposited on the substrate S by spraying a process gas for a chemical vapor deposition process on the substrate S through the gas injection means 530. .
  • each of the plurality of lift pins 140 is not coupled to the lower chamber 512, the weight member (not shown) Can be coupled to.
  • each of the plurality of lift pins 140 maintains a vertical state by a weight member supported on the bottom surface of the lower chamber 512 as the susceptor 120 descends, As lift, each of the plurality of lift pins 140 is suspended by the weight member perpendicular to the susceptor 120.

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Abstract

La présente invention porte sur un dispositif de support de substrat apte à empêcher un endommagement sur une pluralité de broches d'élévation pour porter un substrat, et sur un dispositif de traitement de substrat comprenant ce dernier. Le dispositif de support de substrat selon la présente invention comprend : un suscepteur sur lequel un substrat est placé ; une broche d'élévation agencée afin de traverser verticalement le suscepteur et pour porter le substrat ; et une douille agencée sur le suscepteur afin de permettre à une broche d'élévation d'être introduite en son sein, la douille comprenant un matériau auto-lubrifiant, empêchant ainsi un endommagement sur la broche d'élévation.
PCT/KR2014/004707 2013-05-28 2014-05-27 Dispositif de support de substrat et dispositif de traitement de substrat le comprenant WO2014193138A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0060676 2013-05-28
KR1020130060676A KR102197189B1 (ko) 2013-05-28 2013-05-28 기판 지지 장치

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CN111244329A (zh) * 2018-11-29 2020-06-05 三星显示有限公司 基底处理设备
CN112779521A (zh) * 2019-11-04 2021-05-11 三星显示有限公司 沉积装置以及利用该沉积装置的基板处理方法
US11302565B2 (en) 2016-07-13 2022-04-12 Siltronic Ag Device for handling a semiconductor wafer in an epitaxy reactor and method for producing a semiconductor wafer having an epitaxial layer

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KR20230082405A (ko) * 2021-12-01 2023-06-08 주식회사 유진테크 리프트핀 프로텍션 어셈블리 및 기판 처리 장치

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US11302565B2 (en) 2016-07-13 2022-04-12 Siltronic Ag Device for handling a semiconductor wafer in an epitaxy reactor and method for producing a semiconductor wafer having an epitaxial layer
CN111244329A (zh) * 2018-11-29 2020-06-05 三星显示有限公司 基底处理设备
CN112779521A (zh) * 2019-11-04 2021-05-11 三星显示有限公司 沉积装置以及利用该沉积装置的基板处理方法

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