WO2011129492A1 - Unité d'injection de gaz et dispositif de dépôt en phase vapeur de couche mince, et procédé faisant appel à ladite unité et audit dispositif - Google Patents

Unité d'injection de gaz et dispositif de dépôt en phase vapeur de couche mince, et procédé faisant appel à ladite unité et audit dispositif Download PDF

Info

Publication number
WO2011129492A1
WO2011129492A1 PCT/KR2010/006021 KR2010006021W WO2011129492A1 WO 2011129492 A1 WO2011129492 A1 WO 2011129492A1 KR 2010006021 W KR2010006021 W KR 2010006021W WO 2011129492 A1 WO2011129492 A1 WO 2011129492A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
inner tube
reaction gas
injection
cooling fluid
Prior art date
Application number
PCT/KR2010/006021
Other languages
English (en)
Korean (ko)
Inventor
박형수
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to US13/377,324 priority Critical patent/US20120100292A1/en
Priority to JP2012546980A priority patent/JP5544669B2/ja
Priority to CN2010800573662A priority patent/CN102687242A/zh
Priority to EP10849896.5A priority patent/EP2560193A4/fr
Publication of WO2011129492A1 publication Critical patent/WO2011129492A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Definitions

  • the gas injection unit, the space between the outer tube and the second inner tube, the first area in fluid communication with the cooling fluid inlet port and the fluid communication with the cooling fluid outlet port may further include a separation plate that divides the second area and the third area into fluid communication with the first area and the second area.
  • the reaction gas includes a first reaction gas and a second reaction gas having a different component from the first reaction gas, and the first and second reaction gases are independently provided in the inner tube. After being introduced, they may be mixed with each other in the inner tube.
  • FIG. 7 is a view showing another arrangement structure of the gas injection unit and the substrate support unit.
  • FIG. 1 is a view showing a thin film deposition apparatus 10 according to an embodiment of the present invention.
  • the support plate 310 may have a disc shape.
  • the support plate 310 may be made of a graphite material having excellent electrical conductivity.
  • a plurality of first grooves 312 are formed along the circumferential direction in an edge region of the upper surface of the support plate 320.
  • the first grooves 312 may be formed to have a circular plane. In the present embodiment, a case where six first grooves 312 are provided will be described as an example. However, more or fewer first grooves 312 may be provided.
  • the center of each of the first grooves 312 may be located on the same circumference with respect to the center of the support plate 320.
  • Spiral grooves 313 are provided in the bottom surface of the first groove 312, and gas is supplied from the gas supply member (not shown) to the spiral grooves 313.
  • the supply gas flows along the spiral grooves 313 to provide rotational force to the lower surface of the substrate holder 320 and is exhausted through the space between the substrate holder 320 and the first groove 312.
  • the cooling fluid flows through the space between the inner tube 520 and the outer tube 540 to cool the reaction gases provided into the inner tube 520. Thereafter, the cooling fluid is recovered to the temperature controller 548 through the cooling fluid outlet port 546 and the cooling fluid recovery pipe 547. The recovered cooling fluid is again supplied to the outer tube 540 at a temperature controlled state.
  • an inert gas such as cooling water or nitrogen gas may be used.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne une unité d'injection de gaz et un dispositif de dépôt en phase vapeur de couche mince, et un procédé faisant appel à ladite unité et audit dispositif. L'unité d'injection de gaz comprend : un tube intérieur destiné à l'arrivée d'un gaz de réaction ; un tube extérieur recouvrant le tube intérieur et à travers lequel circule un fluide de refroidissement destiné à refroidir le gaz de réaction dans le tube intérieur ; et un tube d'injection destiné à injecter le gaz de réaction dans le tube intérieur vers l'extérieur du tube extérieur.
PCT/KR2010/006021 2010-04-12 2010-09-06 Unité d'injection de gaz et dispositif de dépôt en phase vapeur de couche mince, et procédé faisant appel à ladite unité et audit dispositif WO2011129492A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/377,324 US20120100292A1 (en) 2010-04-12 2010-09-06 Gas injection unit and a thin-film vapour-deposition device and method using the same
JP2012546980A JP5544669B2 (ja) 2010-04-12 2010-09-06 ガス噴射ユニット及びこれを利用する薄膜蒸着装置及び方法
CN2010800573662A CN102687242A (zh) 2010-04-12 2010-09-06 气体注入单元和使用该气体注入单元的薄膜气相沉积设备及方法
EP10849896.5A EP2560193A4 (fr) 2010-04-12 2010-09-06 Unité d'injection de gaz et dispositif de dépôt en phase vapeur de couche mince, et procédé faisant appel à ladite unité et audit dispositif

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0033318 2010-04-12
KR1020100033318A KR100996210B1 (ko) 2010-04-12 2010-04-12 가스 분사 유닛 및 이를 이용한 박막 증착 장치 및 방법

Publications (1)

Publication Number Publication Date
WO2011129492A1 true WO2011129492A1 (fr) 2011-10-20

Family

ID=43410042

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006021 WO2011129492A1 (fr) 2010-04-12 2010-09-06 Unité d'injection de gaz et dispositif de dépôt en phase vapeur de couche mince, et procédé faisant appel à ladite unité et audit dispositif

Country Status (7)

Country Link
US (1) US20120100292A1 (fr)
EP (1) EP2560193A4 (fr)
JP (1) JP5544669B2 (fr)
KR (1) KR100996210B1 (fr)
CN (1) CN102687242A (fr)
TW (1) TWI435948B (fr)
WO (1) WO2011129492A1 (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452168B (zh) * 2010-06-21 2014-09-11 Hon Hai Prec Ind Co Ltd 電漿式鍍膜裝置
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
KR101205425B1 (ko) * 2010-12-27 2012-11-28 국제엘렉트릭코리아 주식회사 질화갈륨계 엘이디 박막성장을 위한 화학기상증착장치
KR101205426B1 (ko) * 2010-12-27 2012-11-28 국제엘렉트릭코리아 주식회사 질화갈륨계 엘이디 박막성장을 위한 화학기상증착장치 및 방법
KR101205424B1 (ko) * 2010-12-27 2012-11-28 국제엘렉트릭코리아 주식회사 질화갈륨계 엘이디 박막성장을 위한 화학기상증착장치
KR101205436B1 (ko) * 2011-01-04 2012-11-28 삼성전자주식회사 화학 기상 증착 장치
US8821641B2 (en) * 2011-09-30 2014-09-02 Samsung Electronics Co., Ltd. Nozzle unit, and apparatus and method for treating substrate with the same
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
KR101412643B1 (ko) * 2012-06-29 2014-07-08 주식회사 티지오테크 복수의 가스를 공급하기 위한 가스 공급부 및 그 제조방법
KR101955580B1 (ko) * 2012-07-06 2019-03-08 세메스 주식회사 기판처리장치
US20140144380A1 (en) * 2012-11-28 2014-05-29 Samsung Electronics Co., Ltd. Gas supply pipes and chemical vapor deposition apparatus
CN103849855A (zh) * 2012-12-06 2014-06-11 光达光电设备科技（嘉兴）有限公司 化学气相沉积设备及其用于该设备的承载机构
US9536710B2 (en) * 2013-02-25 2017-01-03 Applied Materials, Inc. Tunable gas delivery assembly with internal diffuser and angular injection
JP6058515B2 (ja) * 2013-10-04 2017-01-11 漢民科技股▲分▼有限公司 気相成膜装置
JP6320824B2 (ja) * 2014-03-31 2018-05-09 株式会社東芝 ガス供給管、およびガス処理装置
KR101573522B1 (ko) 2014-04-30 2015-12-02 (주)피앤테크 유기금속 화학기상 증착장치의 노즐 유닛
KR102330279B1 (ko) * 2014-08-04 2021-11-25 세메스 주식회사 기판 처리 장치
CN105764307B (zh) * 2016-04-11 2018-06-01 联想(北京)有限公司 散热装置及电子设备
US11077410B2 (en) 2017-10-09 2021-08-03 Applied Materials, Inc. Gas injector with baffle
US10662522B1 (en) * 2018-11-08 2020-05-26 Sandisk Technologies Llc Thermal metal chemical vapor deposition process
US20220235466A1 (en) * 2019-06-06 2022-07-28 Picosun Oy Porous inlet
US11772058B2 (en) * 2019-10-18 2023-10-03 Taiwan Semiconductor Manufacturing Company Limited Gas mixing system for semiconductor fabrication
DE102019131794A1 (de) * 2019-11-25 2021-05-27 Aixtron Se Wandgekühltes Gaseinlassorgan für einen CVD-Reaktor
CN114351118A (zh) * 2020-10-13 2022-04-15 东部超导科技（苏州）有限公司 Mocvd反应系统及rebco高温超导带材的制法
KR102622987B1 (ko) * 2020-12-10 2024-01-11 세메스 주식회사 기판 처리 장치 및 이에 제공되는 필러 부재
CN115681653A (zh) * 2021-07-29 2023-02-03 北京北方华创微电子装备有限公司 半导体工艺设备及其进气装置
CN114293173B (zh) * 2021-12-17 2024-02-09 厦门钨业股份有限公司 一种碳掺杂化学气相沉积钨涂层的装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060177579A1 (en) * 2002-09-17 2006-08-10 Shin Cheol H Method for manufacturing semiconductor device
KR20070109384A (ko) * 2006-05-11 2007-11-15 삼성전자주식회사 원자층 증착 공정 장비의 샤워 헤드
US20080099147A1 (en) * 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
KR20090086374A (ko) * 2009-07-02 2009-08-12 주식회사 아이피에스 박막증착장치

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3854443A (en) * 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
JPS59919A (ja) * 1982-06-25 1984-01-06 Toshiba Corp ガス導入器
JPH04132213A (ja) * 1990-09-25 1992-05-06 Furukawa Electric Co Ltd:The 半導体薄膜気相成長装置
JP2602590B2 (ja) * 1991-07-03 1997-04-23 日立造船株式会社 ゲートのシール装置
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
KR100492258B1 (ko) * 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
US6562141B2 (en) * 2000-07-03 2003-05-13 Andrew Peter Clarke Dual degas/cool loadlock cluster tool
US20020086529A1 (en) * 2001-01-03 2002-07-04 Mcfeely Fenton Read Actively cooled dispenser system for improved resistivity and phase control in metal CVD from organometallic precursors
DE10118130A1 (de) * 2001-04-11 2002-10-17 Aixtron Ag Vorrichtung oder Verfahren zum Abscheiden von insbesondere kristallinen Schichten auf insbesondere kristallinen Substraten aus der Gasphase
SG125069A1 (en) * 2001-05-17 2006-09-29 Sumitomo Chemical Co Method and system for manufacturing III-V group compound semiconductor and III-V group compound semiconductor
JP3971603B2 (ja) * 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
DE10163394A1 (de) * 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
US6758591B1 (en) * 2002-03-22 2004-07-06 Novellus Systems, Inc. Mixing of materials in an integrated circuit manufacturing equipment
JP4324663B2 (ja) * 2002-09-05 2009-09-02 独立行政法人産業技術総合研究所 シャワーヘッド及びシャワーヘッドを用いた半導体熱処理装置
JP4542859B2 (ja) * 2004-10-04 2010-09-15 大陽日酸株式会社 気相成長装置
KR100706790B1 (ko) * 2005-12-01 2007-04-12 삼성전자주식회사 산화 처리 장치 및 방법
KR100849929B1 (ko) * 2006-09-16 2008-08-26 주식회사 피에조닉스 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치
JP5219562B2 (ja) * 2007-04-02 2013-06-26 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
WO2009017322A1 (fr) * 2007-07-30 2009-02-05 Ips Ltd. Réacteur servant à déposer un film mince sur une plaquette
US8465802B2 (en) * 2008-07-17 2013-06-18 Gang Li Chemical vapor deposition reactor and method
JP5026373B2 (ja) * 2008-09-04 2012-09-12 シャープ株式会社 気相成長装置及び気相成長方法
DE102008055582A1 (de) * 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060177579A1 (en) * 2002-09-17 2006-08-10 Shin Cheol H Method for manufacturing semiconductor device
KR20070109384A (ko) * 2006-05-11 2007-11-15 삼성전자주식회사 원자층 증착 공정 장비의 샤워 헤드
US20080099147A1 (en) * 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
KR20090086374A (ko) * 2009-07-02 2009-08-12 주식회사 아이피에스 박막증착장치

Also Published As

Publication number Publication date
KR100996210B1 (ko) 2010-11-24
CN102687242A (zh) 2012-09-19
JP5544669B2 (ja) 2014-07-09
TWI435948B (zh) 2014-05-01
US20120100292A1 (en) 2012-04-26
TW201137162A (en) 2011-11-01
EP2560193A4 (fr) 2014-07-02
EP2560193A1 (fr) 2013-02-20
JP2013516080A (ja) 2013-05-09

Similar Documents

Publication Publication Date Title
WO2011129492A1 (fr) Unité d'injection de gaz et dispositif de dépôt en phase vapeur de couche mince, et procédé faisant appel à ladite unité et audit dispositif
WO2015057023A1 (fr) Appareil de traitement de substrat
WO2010101369A2 (fr) Appareil de distribution de gaz et appareil de traitement de substrat comprenant ce dernier
WO2012036499A2 (fr) Dispositif de dépôt de couches minces
EP1159465B1 (fr) Procedes de depot en couches atomiques
WO2011007967A2 (fr) Appareil de fabrication de semi-conducteurs
WO2013105730A1 (fr) Pomme de douche de type à refroidissement et appareil de traitement de substrat doté de celle-ci
WO2014168331A1 (fr) Dispositif de traitement de substrat
WO2012096466A2 (fr) Appareil de dépôt de film mince et système de traitement de substrat le comprenant
WO2013154297A1 (fr) Appareil de traitement de substrat à élément chauffant ascendant/descendant
WO2014035096A1 (fr) Dispositif de traitement de substrat
WO2013022127A1 (fr) Appareil de mocvd
WO2014003298A1 (fr) Chambre de traitement et procédé de traitement de substrat
WO2015083884A1 (fr) Appareil de traitement de substrat
WO2014098486A1 (fr) Appareil de traitement de substrat et procédé pour commander la température d'un élément chauffant
WO2013009000A2 (fr) Dispositif pour la fabrication de led
WO2013100462A1 (fr) Dispositif de traitement de substrat
US20150368830A1 (en) One-piece injector assembly and one-piece exhaust liner
WO2013191415A1 (fr) Appareil de traitement de substrat
WO2014042488A2 (fr) Appareil de traitement de substrat
WO2014112747A1 (fr) Dispositif de traitement de substrat
WO2014157835A1 (fr) Appareil servant au traitement de substrat
WO2013191414A1 (fr) Appareil de traitement de substrat
WO2015041392A1 (fr) Élément chauffant et appareil de traitement de substrat comportant ce dernier
WO2015072661A1 (fr) Unité d'entraînement de réaction, appareil de traitement de substrat, et procédé de dépôt de film mince

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080057366.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10849896

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 13377324

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2012546980

Country of ref document: JP

REEP Request for entry into the european phase

Ref document number: 2010849896

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2010849896

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE