WO2014003298A1 - Chambre de traitement et procédé de traitement de substrat - Google Patents

Chambre de traitement et procédé de traitement de substrat Download PDF

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Publication number
WO2014003298A1
WO2014003298A1 PCT/KR2013/002751 KR2013002751W WO2014003298A1 WO 2014003298 A1 WO2014003298 A1 WO 2014003298A1 KR 2013002751 W KR2013002751 W KR 2013002751W WO 2014003298 A1 WO2014003298 A1 WO 2014003298A1
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WO
WIPO (PCT)
Prior art keywords
gas
boat
space
injection
chamber
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PCT/KR2013/002751
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English (en)
Korean (ko)
Inventor
윤송근
이종화
고혁준
이장혁
Original Assignee
(주)이노시티
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Publication of WO2014003298A1 publication Critical patent/WO2014003298A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Definitions

  • the present invention relates to a process chamber and a substrate processing method, and a process chamber capable of improving substrate processing capability and a substrate processing method using the same.
  • sputtering In general, in the manufacturing process of a semiconductor device, sputtering, chemical vapor deposition (CVD), and atomic layer deposition (ALD) are applied to uniformly deposit a thin film.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • a thin film having a required thickness is deposited on a substrate using a reaction gas and a decomposition gas.
  • Chemical Vapor Deposition (CVD) first injects various gases into the process chamber and deposits a thin film of the required thickness on the substrate by chemically reacting gases induced by high energy such as heat, light and plasma.
  • the chemical vapor deposition method increases the deposition rate by controlling the reaction conditions through the ratio and amount of plasma or gases applied by the reaction energy.
  • the fast reactions make it very difficult to control the thermodynamic stability of atoms and degrade the physical, chemical and electrical properties of thin films.
  • atomic layer deposition is a method for depositing an atomic layer by alternately supplying a source gas (reaction gas) and a purge gas, the thin film formed thereby has a good coating properties and is applied to large diameter substrates and ultra-thin film Excellent electrical and physical properties.
  • atomic layer deposition involves first supplying a first source gas to chemically adsorb a layer of the first source onto the substrate surface and purging the excess physically adsorbed sources by flowing a purge gas.
  • the second source gas is supplied to the source of the layer to chemically react the first source and the second source gas of one layer to deposit the desired atomic layer thin film, and the excess reaction gas flows through the purge gas to purge. the thin film is deposited.
  • the atomic layer deposition method can obtain not only a stable thin film but also a uniform thin film by using a surface reaction mechanism.
  • the atomic layer deposition method separates the source gas and the reaction gas from each other and sequentially injects and purges the particles, thereby suppressing particle generation by gas phase reaction, compared to chemical vapor deposition.
  • FIG. 1 is a schematic view showing the configuration of an atomic layer thin film deposition apparatus of a showerhead method.
  • the showerhead type atomic layer thin film deposition apparatus includes a process chamber (2) having a reaction space (1) in which reactant gas and purge gas are sequentially supplied, and atomic layer deposition is performed on the substrate (3), and the process chamber (2).
  • a substrate support 4 provided at a lower portion of the substrate 3 on which the substrate 3 is mounted, and a shower head 5 and the shower head 5 which inject gas into the reaction space 1 to face the substrate stand 4. It is provided in each of the supply path to be supplied includes a valve (6) for opening and closing the gas supply.
  • the process chamber 2 is connected with pumping means for discharging the gas supplied to the reaction space 1 to the outside.
  • the conventional atomic layer thin film deposition apparatus has a small volume of process chamber 2 for rapid gas supply and removal in the reactor 1 in order to uniformly expose the density of the reaction gas and the purge gas on the substrate 3. ).
  • the technical problem of the present invention is to provide a process gas injection means of a horizontal injection type structure, rather than a conventional process gas injection means of a vertical injection type structure.
  • a process chamber includes a boat in which a plurality of substrates are stacked up and down, a lower chamber housing having a first inner space as an inner space, and a second inner space positioned at an upper layer of the lower chamber housing.
  • Process gas injection means for horizontally injecting different process gases from the walls of the upper chamber housing to the spaced stacked substrates of the boat separately from the walls of the upper chamber housing, and the gas in the inner space of the upper chamber housing
  • Process gas discharging means for discharging the gas, the boat driving means for elevating the boat from the first inner space of the lower chamber housing to the second inner space of the upper chamber housing, and rotating the boat; And a substrate transfer gate penetrated through the sidewalls.
  • the process gas is characterized in that at least any one of the process gas, including a source gas, a reaction gas and a purge gas.
  • the upper chamber housing includes an upper chamber inner housing in which the boat lifted through the opened lower side is accommodated, and an upper chamber outer housing surrounding the upper surface and sidewalls of the upper chamber inner housing.
  • the process gas injection means has an internal space, a process gas inlet space formed in the wall of the upper chamber housing, a plurality of gas injection holes formed in the wall surface of the process gas inlet space in contact with the boat, and the process gas It includes at least one process gas supply pipe connected to the internal space of the inlet space to introduce the process gas.
  • the process gas supply pipe includes a source gas supply pipe for supplying the source gas, a reaction gas supply pipe for supplying the reaction gas, and at least one or more purge gas supply pipe for supplying the purge gas, and each of the supply pipes is separated and each independently gas.
  • the process gas inflow space is divided into a plurality of partitions, and any one of the source gas supply pipe, the reaction gas supply pipe, and the purge gas supply pipe is connected to the partition space between each partition wall.
  • the gas injection hole formed in the wall surface of the partition space injects different process gases according to the type of supply pipes supplied to each partition space, each partition wall is formed so as to vertically divide the inside of the process gas inlet space.
  • the substrate processing method horizontally processes the process gas through the injection hole of the inner sidewall between the boat on which the plurality of substrates are stacked up and down and the boat is placed in the inner space and the substrate is spaced apart on the boat.
  • a method of depositing an atomic layer of a process chamber having a flowing chamber housing comprising: laminating a substrate vertically on a boat, placing the boat in an inner space of the chamber housing, and rotating the boat And vertically dividing the injection holes of the inner sidewall of the chamber housing into a plurality of injection groups, and simultaneously spraying different process gases on each of the injection groups onto the rotating substrate while being spaced apart or spraying at different times. .
  • the process of injecting purge gas through the purge gas injection group when the substrate processing process is started, and the reaction gas is not injected while maintaining the purge gas injection Source gas injection process for injecting the source gas through the source gas injection group in the non-state, and reaction for injecting the reaction gas through the reaction gas injection group while the source gas is not injected while maintaining the purge gas injection
  • the substrate processing ability can be improved by spraying the process gas horizontally after laminating the substrates in the vertical direction.
  • various process treatment methods may be performed.
  • the present invention may be applied to a CVD or an ALD device.
  • the plasma generating means by providing the plasma generating means, the efficiency of the substrate processing ability and the film quality can be improved.
  • FIG. 1 is a schematic view showing the configuration of an atomic layer thin film deposition apparatus of a showerhead method.
  • FIG 2 is an external perspective view of a process chamber according to an embodiment of the present invention.
  • FIG 3 is an exploded view of a process chamber in accordance with an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a process chamber in which a boat is raised or lowered according to an embodiment of the present invention.
  • FIG 5 is a view showing a state in which the boat is raised in stages as the substrate is mounted on the boat according to an embodiment of the present invention.
  • FIG. 6 is a view illustrating a process gas inlet space, a process gas discharge space, and a plasma generating means provided on an inner sidewall of an upper inner housing according to an exemplary embodiment of the present invention.
  • FIG. 7 is a diagram illustrating a process gas flow above the process chamber in accordance with an embodiment of the present invention.
  • FIG. 8 is a view showing the sealing sealing coupled to each other the lower housing chamber and the boat housing in accordance with an embodiment of the present invention.
  • FIG. 9 is a view illustrating a process in which a substrate is loaded into a boat, processed in a chamber housing, and then unloaded again according to an embodiment of the present invention.
  • FIG. 10 is a view of the partition wall of the process gas from the top according to an embodiment of the present invention.
  • FIG. 11 is a perspective view of a process gas inlet space in which three partitions are formed according to an embodiment of the present invention.
  • FIG. 12 is a view showing a state in which the distribution flow of each gas is viewed from above according to an embodiment of the present invention.
  • FIG. 13 is a view illustrating a process gas inlet space body having a plurality of partition spaces according to an exemplary embodiment of the present invention.
  • FIG. 14 is a flowchart illustrating a process of simultaneously spraying a process gas in the process of depositing a space-division atomic layer according to an embodiment of the present invention.
  • FIG. 15 is a diagram illustrating a flow graph for simultaneously spraying a process gas during a space-division atomic layer deposition process according to an exemplary embodiment of the present invention.
  • 16 is a diagram illustrating a sequence in which a substrate is exposed to the process gas when the process gas is simultaneously sprayed according to the exemplary embodiment of the present invention.
  • FIG. 17 is a flowchart illustrating a process of spraying process gas at a time difference in space-division atomic layer deposition according to an embodiment of the present invention.
  • FIG. 18 is a diagram illustrating a flow graph in which process gas is injected at a time difference in the space-division atomic layer deposition process according to an exemplary embodiment of the present invention.
  • the process chamber according to the embodiment of the present invention can be applied to various processing apparatuses such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • a semiconductor such as an LED device and a memory device may be manufactured using a process chamber that injects gas from the sidewall and discharges the gas to the other side. It can be applied to.
  • FIG. 2 is an external perspective view of a process chamber according to an embodiment of the present invention
  • FIG. 3 is an exploded view of the process chamber according to an embodiment of the present invention
  • FIG. 4 is a view of a boat being raised or lowered according to an embodiment of the present invention.
  • 5 is a cross-sectional view of a process chamber of FIG. 5 is a view illustrating a state in which a boat is stepped up as a substrate is mounted on the boat according to an embodiment of the present invention
  • FIG. 6 is an upper inner housing according to an embodiment of the present invention.
  • FIG. 7 is a view illustrating a process gas inlet space, a process gas discharge space, and a plasma generating means provided on an inner sidewall of the same, and FIG. One drawing.
  • the process chamber stacks a plurality of substrates up and down and then flows the process gas between the stacked substrates so that substrate processing such as deposition and etching is performed on the surface of the substrate.
  • the process chamber includes a boat 300 in which a plurality of substrates are spaced apart from each other, and the boat is lifted up and positioned in an internal space. It comprises a chamber housing (100,200), a boat driving means 400 for raising and lowering the boat into the chamber housing, and a substrate transfer gate 500 through one side wall of the chamber housing.
  • the Boat 300 is a plurality of substrates are stacked spaced apart up and down, there is a gap between the stacked substrates so that the process gas flows between these gaps flows to the other side. Therefore, the process gas may be in contact with the upper surface of the substrate, so that substrate processing such as deposition or etching may be performed on the substrate.
  • the boat 300 includes a plurality of support bars 330 and 330a connecting the upper plate plate 310, the lower plate plate 320, the upper plate plate 310, and the lower plate plate 320 to separate the substrates. 330b and 330c, and a plurality of substrate seating grooves 331 formed on sidewalls of the support bar.
  • the substrate seating grooves 331 are grooves excavated from the sidewall of the support bar 330, and each substrate is seated in these grooves.
  • the boat may rotate and repeatedly expose the substrate to the source gas, purge gas, and reaction gas.
  • the substrate transfer gate 500 is a gate formed on one side wall of the lower chamber housing 200 to allow the substrate to enter and exit the boat. Each substrate is transferred through the substrate transfer gate as it is loaded or unloaded into the boat 300.
  • the boat driving means 400 raises or lowers the boat 300 between an inner space of the upper chamber housing 100 and an inner space of the lower chamber housing 200, and the boat support 420 and the lowering rotary drive shaft. 410.
  • the boat support 420 supports the lower plate plate 320 at the upper surface, and the elevating rotation drive shaft 410 penetrates the bottom surface of the lower chamber housing 200 to lower the boat's bottom surface, that is, the lower plate of the boat.
  • the bottom surface of the boat support 420 is connected to the lifting and lowering rotation drive shaft 410 is raised and lowered in accordance with the drive of the up and down reciprocating drive source, such as a motor, the up and down piston reciprocating movement to raise or lower the boat.
  • the lifting and lowering rotation drive shaft 410 ascends or descends the boat step by step instead of raising and lowering the boat at the same time during the lifting (up / down) operation of the boat.
  • the boat driving means performs one step in the boat as shown in FIG. 5 (b). It is further raised to allow the next substrate seating groove to reach the substrate transfer gate.
  • the board may be finally mounted and inserted into the inner space of the upper chamber housing.
  • the elevating rotary drive shaft also rotates the boat support, which in turn can rotate the boat connected to the boat support. Therefore, regardless of the CVD process or the ALD process, as the boat rotates as the process proceeds, the substrate placed on the boat may be sequentially exposed to the source gas, the purge gas, and the reaction gas.
  • the chamber housings 100 and 200 are positioned in the inner space by raising the boat, and spray the process gas in a horizontal direction from one inner wall to flow between the stacked substrates and discharge them to the outside.
  • the chamber housing which is an embodiment of the present invention, includes a lower chamber housing 200 and an upper chamber housing 100.
  • the lower chamber housing 200 has an upper side open to have an inner space (hereinafter, referred to as a “first inner space”).
  • first inner space an inner space
  • the lowered boat 300 is located in the first inner space of the lower chamber housing 200 as shown in FIG. 4 (b).
  • the boat 300 is loaded in step by step into the substrate mounting groove, the boat 300 does not exist in the first inner space of the upper chamber housing 100.
  • the upper chamber housing 100 is positioned above the lower chamber housing 200 with the lower side opened to have an inner space (hereinafter, referred to as a “second inner space”).
  • the boat raised from the first inner space of the lower chamber housing is positioned in the second inner space of the upper chamber housing 100, and the boat is mounted with the substrates spaced apart from each other in the substrate seating grooves.
  • Process gas is injected from one inner wall of the upper chamber housing 100, flows between the substrates stacked on the boat, and passes through the other inner wall of the upper chamber housing to be discharged.
  • the upper chamber housing When the process gas is injected from one inner wall of the upper chamber housing 100 to the other inner wall, the upper chamber housing may be implemented as a single wall, but may be implemented in a double wall form. That is, the upper chamber housing 100 may be implemented in the form of a housing having a dual structure of the upper chamber inner housing 110 and the upper chamber outer housing 120 spaced apart from each other.
  • the upper chamber inner housing 110 located inside accommodates the boat 300 lifted from the lower chamber housing 200, and the upper chamber outer housing 120 located outside the upper and side walls of the upper chamber inner housing 110. Wrap it apart.
  • One side inner wall of the upper chamber inner housing 110 is provided with a process gas injection means for injecting a process gas toward the other inner wall opposite and a process gas discharge means for discharging the process gas inside the housing to the outside.
  • a process gas injection means for injecting a process gas toward the other inner wall opposite
  • a process gas discharge means for discharging the process gas inside the housing to the outside.
  • the gas injection means 130 includes a process gas inflow space 131 having an internal space and a plurality of gas injection holes 132 formed on a wall surface of the process gas inflow space contacting the boat. And a process gas supply pipe 133 for introducing the process gas into the inner space of the process gas inflow space.
  • the process gas inflow space 131 is a space having an internal space due to the up, down, left, and right walls, and gas introduced from the process gas supply pipe 133 is present in the internal space.
  • a plurality of gas injection holes 132 penetrating into the interior space of the process gas inlet space 131 are formed in the wall surface of the process gas inlet space so that the process gas is formed in the upper chamber through the gas injection holes 132.
  • the gas injection holes 132 are formed in plural numbers at positions corresponding to gaps between the substrate gaps mounted on the boat.
  • the wall of the process gas inlet space is the wall facing the boat.
  • the process gas supply pipe 133 injects the process gas into the internal space of the process gas inflow space 131, and supplies the process gas stored in the process gas storage tank to the process gas inflow space 131. Therefore, the process gas supply pipe 133 has a conduit connected to the process gas storage tank along the inside of the wall of the upper chamber inner housing to supply the process gas to the process gas inlet space.
  • the upper chamber inner housing is provided with a process gas discharge means 140 for discharging the processed process gas to the outside.
  • the process gas discharge unit 140 includes a process gas discharge space 141, a gas discharge hole 142, a process gas discharge pipe 143, and a discharge pump (not shown).
  • the process gas discharge space 141 is a space having an inner space due to the upper, lower, left, and right walls.
  • the process gas remaining in the upper chamber inner housing 110 flows into the process gas and exists inside the space.
  • a plurality of gas discharge holes 142 are formed on the surface of the process gas discharge space so that the process gas remaining after the substrate treatment in the inner space of the upper chamber inner housing passes through the gas discharge hole 142. Flows inside).
  • the wall surface of the process gas discharge space 141 in which the gas discharge hole is formed is a surface facing the boat.
  • the process gas discharge pipe 143 connects the discharge space and the internal space of the fixed gas discharge space.
  • the process gas discharge pipe 143 is connected to the inside of the process gas discharge space 141 and is connected to an external discharge pump (not shown) along the inside of the wall of the upper chamber inner housing. Therefore, the process gas inside the process gas discharge space 141 is discharged to the outside via the process gas discharge pipe 143.
  • the discharge pump (not shown) performs the pumping to discharge the process gas to the outside through the process gas discharge pipe.
  • the process gas inlet space 131 and the process gas discharge space 141 having the internal space as described above are formed on the wall of the upper housing inner housing, the process gas inlet space 131 and the process gas discharge space ( 141 are formed at opposite positions facing each other with the boat in between.
  • the process gas injected from the process gas inlet space 131 flows into the process gas discharge space 141 through a gap between the substrates mounted on the boat by the pumping discharge pressure and then is discharged to the outside.
  • the process gas inlet space 131 and the process gas discharge space 141 may be buried in the side wall of the upper chamber inner housing, but may be coupled to the inner surface of the side wall as a separate mechanism.
  • FIG. 7 is a view of the process chamber according to an embodiment of the present invention as seen from above, and shows a process gas flows from one side wall to the other side wall of the upper chamber inner housing.
  • the process gas injected from the gas injection hole of the process gas inlet space 130 horizontally crosses the inner space of the upper chamber inner housing 110 and is disposed on the other side wall of the process gas discharge space facing each other. 140) can be seen flowing.
  • the process gas flow may be induced by a pump discharge pressure connected to the process gas discharge space 140.
  • the boat and the upper chamber housing should be sealed to each other to maintain the seal with the outside.
  • the boat support 420 and the upper chamber inner housing 120 are sealed by a sealant combination such as an O-ring.
  • a sealant combination such as an O-ring.
  • an o-ring groove 421 is formed on the outer circumferential outer upper surface of the boat support 420.
  • the outer circumferential outer upper surface is a surface in contact with the bottom surface of the lower chamber 110 inside the upper chamber.
  • An O-ring 111 is formed at a bottom surface of the upper chamber inner housing 110 in contact with the boat support 420 at a position opposite to the O-ring groove 421 of the boat support. Therefore, when the boat 300 is lifted up and stored in the upper chamber inner housing 110, as shown in FIG. 8B, an O-ring formed on the bottom surface of the upper chamber inner housing is the upper surface of the boat support. Can be inserted into the O-ring groove formed in the, to maintain the sealing.
  • an embodiment of the present invention includes a plasma generating means.
  • Plasma generating means is used to excite the process gas into a plasma state.
  • Plasma generating means may be provided with a plasma generating means in the upper chamber housing, in the case of the upper chamber housing of the dual structure, the plasma generating means may be provided between the upper chamber inner housing and the upper chamber outer housing.
  • the plasma generating means is characterized by being implemented as a U-shaped plasma antenna. That is, as shown in FIG.
  • the connecting line 600c is formed of a plasma antenna penetrating in a U shape between the upper chamber inner housing and the upper chamber outer housing.
  • the U-shaped plasma antenna may be driven in a Capacitively Coupled Plasma (CCP) method of exciting plasma using RF.
  • the plasma may be driven by a high frequency inductively coupled plasma (ICP) method.
  • the process chamber may be provided with a heating means for heating the substrate. That is, substrate heating means such as a heater for heating the substrate in a boat or upper chamber housing may be provided to provide a heat source during substrate processing.
  • substrate heating means such as a heater for heating the substrate in a boat or upper chamber housing
  • the lower plate plate 310 of the boat may be provided with a heating means such as a heating wire.
  • the heating wire 121 may be provided on the inner wall of the upper chamber inner housing. The heating wire located on the inner wall of the upper inner housing may be embedded in the wall and formed in a zigzag shape.
  • FIG. 9 is a view illustrating a process in which a substrate is loaded into a boat, processed in a chamber housing, and then unloaded again according to an embodiment of the present invention.
  • the loading process will be described.
  • the substrate is transferred and seated from the substrate seating groove at the end of the boat through the substrate transfer gate.
  • the boat is lifted so that the next substrate seating groove is located at the substrate transfer gate, and the substrate being transported is seated in the substrate seating recess.
  • the boat is raised and the substrate is seated in each substrate seating groove.
  • the boat on which the substrate is seated in the substrate seating groove is accommodated in the upper chamber internal housing. Subsequently, as shown in FIG.
  • the process gas flows out of the sidewall and contacts the upper surface of the substrate, thereby processing the substrate.
  • the substrate processing process is completed, as shown in FIG. 9E, the substrate is again unloaded to be discharged to the outside through the substrate transfer gate.
  • the boat is stored in the inner space of the lower chamber housing.
  • the lower chamber housing serves as the substrate loading chamber and the upper chamber housing serves as the process chamber through the process gas injection.
  • the present invention is not limited thereto, and it will be apparent that the lower chamber housing may be applied to a process chamber for injecting a process gas and a configuration such that the upper chamber housing serves as a substrate loading chamber. Therefore, the lower chamber housing also has a plurality of gas injection holes and process gas inlet spaces capable of performing the same function as the upper chamber housing, so that the process can be performed separately in the lower chamber housing, or both the lower chamber housing and the upper chamber housing You will be able to proceed with the equivalent process.
  • the process chamber is a process chamber used for a chemical vapor deposition or an atomic layer deposition process using a plurality of process gases
  • the process gas injection means at the time of carrying out the atomic layer deposition process which has a source gas, a reaction gas, and a purge gas as a process gas is demonstrated.
  • the interior of the process gas inlet space 131 is divided into a plurality of partitions, as shown in FIG. 10, and each partition 135.
  • the barrier rib space 136 between) has a structure in which any one of the source gas supply pipe, the reaction gas supply pipe and the purge gas supply pipe is connected.
  • 10 is a diagram illustrating a conceptual diagram of a supply pipe connected to an internal space of a process gas inlet space. Referring to FIG. 10, the interior of the process gas inlet space 131, in which the upper chamber inner housing 110 forms a part, is separated into a plurality of partitions.
  • the source gas supply pipe 133a, the purge gas supply pipe 133b, and the reaction gas supply pipe 133c are connected to the partition space 136 separated by the partition 135. That is, the source gas supply pipe 133a is connected to the first partition space 136a, the purge gas supply pipe 136b is connected to the second partition space 136b, and the reaction gas supply pipe 136c is connected to the third partition space. ) Is connected, and source gas, purge gas, and reaction gas are supplied to each partition space.
  • FIG. 11 which is a perspective view of a process gas inflow space having a partition
  • the partition 135 is formed to vertically divide the inside of the process gas inflow space.
  • the same process gas is injected vertically between the gaps between the substrates.
  • the source gas, the reaction gas, and the supply gas have the structure of FIG. 10 connected to each partition space, the top of the distribution flow of each gas is shown in FIG. 12. Referring to FIG. 12, it can be seen that the source gas, the reaction gas, and the supply gas provided in each partition space may be provided at the same time.
  • the above-described process gas is just one example, and the same process gas (eg, source gas) is supplied to all of the partition spaces so that the same process gas into the inside of the chamber housing is temporarily provided at the gas injection holes formed in all of the partition spaces. Will be able to spray.
  • FIG. 13 is a diagram illustrating a process gas inflow space having a plurality of partition spaces, wherein a source gas supply pipe (SH 4 , Si 2 H 6, or the like) is introduced into the first partition space 136a.
  • a source gas supply pipe SH 4 , Si 2 H 6, or the like
  • 133a may be connected.
  • a purge gas supply pipe 133b may be connected to the second partition space 136b and the fourth partition space 136d so that purge gas such as Ar and N 2 may be introduced therein.
  • first reaction gas supply pipe 133c may be connected to the third partition space 136c so that the first reaction gas such as O 2 , O 3 , NH 3 flows therein, and the B 2 H is connected to the fifth partition space 136e.
  • the second reaction gas supply pipe 133d may be connected to allow the second reaction gas such as 6 , PH 3 , C 2 H 4 , and H 2 to flow therein.
  • FIG. 14 is a flowchart illustrating a process of simultaneously injecting process gases in a space-division atomic layer deposition process according to an embodiment of the present invention
  • FIG. 15 is a process gas in a space-division atomic layer deposition process according to an embodiment of the present invention
  • FIG. 16 is a diagram illustrating a flow graph of simultaneous spraying
  • FIG. 16 is a diagram illustrating a sequence in which the substrate is exposed to the process gas when the process gas is simultaneously sprayed according to an embodiment of the present invention.
  • the boat After stacking the substrate up and down on the boat (S1401), the boat is positioned in the inner space of the chamber housing (S1402). Thereafter, the boat is rotated (S1403), and as a result, the substrate stacked on the boat is rotated.
  • the partition space is formed to spray the source gas, the purge gas and the reaction gas in order as shown in FIG. 13 to facilitate the explanation, the A region, which is a part of the substrate, is exposed to the process gas as the substrate is rotated. Will be described with reference to FIG. 16.
  • the source gas and the source gas may be further improved.
  • the purge gas may be implemented to be injected at a time difference. This will be described with reference to FIGS. 17 and 18.
  • FIG. 17 is a flowchart illustrating a process of spraying process gas at a time difference in a space-division atomic layer deposition process according to an exemplary embodiment of the present invention
  • FIG. 18 is a flowchart of a space-division atomic layer deposition process according to an embodiment of the present invention. This figure shows the flow graph of spraying process gas with time difference.
  • the boat After stacking the substrate up and down on the boat (S1701), the boat is positioned in the inner space of the chamber housing (S1702). Thereafter, the boat is rotated (S1703), and as a result, the substrate stacked on the boat is rotated.
  • different process gases such as source gas, reaction gas, and purge gas
  • source gas such as source gas, reaction gas, and purge gas
  • purge gas is continuously injected through the purge gas injection group.
  • the source gas is injected through the source gas injection group while the injection of the reaction gas is not performed.
  • the reaction gas is injected through the reaction gas injection group while the injection of the source gas is not performed while maintaining the purge gas injection.
  • the injection time difference between the source gas and the reaction gas is determined by a preset time. That is, the reaction gas injection is made after a predetermined time elapses after the source gas injection is stopped, and likewise, the source gas injection is performed after the predetermined time elapses after the reaction gas injection is stopped.
  • Plasma is applied.
  • Plasma is applied during the reaction gas injection to increase the reaction of the source gas and the reaction gas. Since plasma application occurs in the process gas inlet space, the substrate is rotated to improve uniformity of the thin film so that all regions of the substrate reach around the process gas inlet space, thereby allowing the plasma to reach the entire substrate evenly. .
  • the source gas supply pipe and the purge gas supply pipe are connected to the partition space corresponding to the source gas injection group by a valve to enable selective gas supply.
  • purge gas may be injected through the reaction gas injection group to improve the purge capacity.

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Abstract

La présente invention concerne une chambre de traitement et un procédé de traitement de substrat. La chambre de traitement selon un mode de réalisation de la présente invention comprend : une nacelle dans laquelle une pluralité de substrats sont empilés verticalement de façon espacée les uns des autres ; un logement de chambre de couche inférieure qui comporte un premier espace intérieur qui est à l'intérieur de l'espace interne de la nacelle ; un logement de chambre de couche supérieure qui est positionné dans la couche supérieure du logement de chambre de couche inférieure et qui comporte un second espace intérieur qui est à l'intérieur de l'espace interne de la nacelle ; un moyen d'injection de gaz de traitement qui injecte horizontalement différents gaz de traitement individuellement entre les substrats de la nacelle qui sont empilés de façon espacée les uns des autres à partir du corps de paroi du logement de chambre de couche supérieure ; un moyen de décharge de gaz de traitement qui décharge le gaz dans l'espace intérieur du logement de chambre de couche supérieure vers l'extérieur ; un moyen d'entraînement de nacelle qui élève la nacelle jusqu'au premier espace intérieur du logement de chambre de couche inférieure et jusqu'au second espace intérieur du logement de chambre de couche supérieure, et abaisse la nacelle à partir de ceux-ci, et fait tourner la nacelle ; et une porte de transfert de substrat qui pénètre dans une paroi latérale du logement de chambre de couche inférieure.
PCT/KR2013/002751 2012-06-27 2013-04-03 Chambre de traitement et procédé de traitement de substrat WO2014003298A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111243994A (zh) * 2015-07-17 2020-06-05 株式会社国际电气 气体供给喷嘴、衬底处理装置及半导体器件的制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101507556B1 (ko) * 2013-02-28 2015-04-07 주식회사 엔씨디 대면적 기판용 수평형 원자층 증착장치
KR101507557B1 (ko) * 2013-04-25 2015-04-07 주식회사 엔씨디 대면적 기판용 수평형 원자층 증착장치
KR101499467B1 (ko) * 2013-11-05 2015-03-06 주식회사 엔씨디 대면적 기판용 수평형 원자층 증착장치
KR101698021B1 (ko) * 2014-12-31 2017-01-19 주식회사 엔씨디 대면적 원자층 증착장치
KR101841326B1 (ko) 2015-04-24 2018-03-23 한양대학교 산학협력단 박막 제조 장치 및 그 제조 방법
KR101789512B1 (ko) * 2017-01-09 2017-10-26 주식회사 아르케 탄화규소 태양전지 제작방법
WO2024091305A1 (fr) * 2022-10-27 2024-05-02 Applied Materials, Inc. Procédés de corrélation de zones de chambres de traitement, et systèmes et procédés associés

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037075A (ja) * 2001-07-26 2003-02-07 Tokyo Electron Ltd 移載装置の制御方法および熱処理方法並びに熱処理装置
JP2003109798A (ja) * 2001-09-27 2003-04-11 Ishikawajima Harima Heavy Ind Co Ltd 放電装置、プラズマ処理方法および太陽電池
KR20100077445A (ko) * 2008-12-29 2010-07-08 주식회사 케이씨텍 배치타입 원자층 증착장치
KR20100105520A (ko) * 2010-09-01 2010-09-29 주성엔지니어링(주) 공정챔버의 측벽을 통하여 공정가스를 분사하고 배출하는 플라즈마 공정장비 및 이를 이용한 기판의 처리방법
KR20110110063A (ko) * 2011-04-25 2011-10-06 (주)이노시티 웨이퍼 저장 장치
KR20110131158A (ko) * 2011-11-09 2011-12-06 주성엔지니어링(주) 박막 제조 장치 및 이를 이용한 박막 증착 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037075A (ja) * 2001-07-26 2003-02-07 Tokyo Electron Ltd 移載装置の制御方法および熱処理方法並びに熱処理装置
JP2003109798A (ja) * 2001-09-27 2003-04-11 Ishikawajima Harima Heavy Ind Co Ltd 放電装置、プラズマ処理方法および太陽電池
KR20100077445A (ko) * 2008-12-29 2010-07-08 주식회사 케이씨텍 배치타입 원자층 증착장치
KR20100105520A (ko) * 2010-09-01 2010-09-29 주성엔지니어링(주) 공정챔버의 측벽을 통하여 공정가스를 분사하고 배출하는 플라즈마 공정장비 및 이를 이용한 기판의 처리방법
KR20110110063A (ko) * 2011-04-25 2011-10-06 (주)이노시티 웨이퍼 저장 장치
KR20110131158A (ko) * 2011-11-09 2011-12-06 주성엔지니어링(주) 박막 제조 장치 및 이를 이용한 박막 증착 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111243994A (zh) * 2015-07-17 2020-06-05 株式会社国际电气 气体供给喷嘴、衬底处理装置及半导体器件的制造方法

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