WO2014123310A1 - Support de substrat et appareil de traitement de substrat comportant ledit support de substrat - Google Patents

Support de substrat et appareil de traitement de substrat comportant ledit support de substrat Download PDF

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Publication number
WO2014123310A1
WO2014123310A1 PCT/KR2014/000452 KR2014000452W WO2014123310A1 WO 2014123310 A1 WO2014123310 A1 WO 2014123310A1 KR 2014000452 W KR2014000452 W KR 2014000452W WO 2014123310 A1 WO2014123310 A1 WO 2014123310A1
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WO
WIPO (PCT)
Prior art keywords
substrate
support
disposed
protrusions
protrusion
Prior art date
Application number
PCT/KR2014/000452
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English (en)
Inventor
Sang Hyun Ji
Chang Min Kwon
Yong Soo Moon
Seung Ae Choi
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Ap Systems Inc.
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Publication date
Application filed by Ap Systems Inc. filed Critical Ap Systems Inc.
Publication of WO2014123310A1 publication Critical patent/WO2014123310A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Definitions

  • the present disclosure relates to a substrate support, and more particularly, to a substrate support that is capable of preventing heat loss of a substrate from occurring in a substrate treating process and a substrate treating apparatus having the same.
  • the thermal treating process is applied to thermal oxidization of a substrate, thermal diffusion of injected ions, and various annealing processes.
  • the thermal treating process may include an annealing process for recovering crystalline after impurity ions are injected and an annealing process for improving contact characteristics between aluminum (Al) and silicon (Si) and interface characteristics between silicon (Si) and silicon oxide (SiO 2 ).
  • the thermal treating apparatus for performing the thermal treating process includes a furnace and a rapid thermal processing (RTP) device.
  • the RTP device is being widely used because the RTP device obtains a desired effect at a high temperature and also performs a thermal treating process for a short time (usually, approximately several ten seconds to approximately several minutes), thereby minimizing side effects such as generation of impurities.
  • the general RTP device is provided with a process chamber in which a substrate is treated.
  • a plurality of heat sources e.g., tungsten halogen lamps for supplying heat e.g., radiant energy into a chamber is disposed in an upper portion of the inside the process chamber.
  • a substrate rotation unit supporting the substrate is disposed in a lower portion of the inside the process chamber to face the plurality of heat sources.
  • the substrate loaded into the chamber is supported by the substrate rotation unit, and the substrate rotation unit rotates the substrate.
  • the heat source supplies radiant energy into the rotating substrate to heat a surface of the substrate to a desired temperature.
  • the substrate rotation unit is provided with an edge ring on which the substrate is seated, and predetermined heat is lost through the edge ring contacting and supporting the substrate.
  • a heat loss through the edge ring has a relatively less influence on temperature formation of the substrate when compared to high-temperature radiant heat.
  • the heat loss may be compensated within a range of a feedback temperature control in the RTP process through the substrate temperature measured by a pyrometer provided in the RTP device.
  • the present disclosure provides a substrate support that is capable of preventing heat loss from occurring in a substrate and a substrate treating apparatus having the same.
  • the present disclosure provides a substrate support which is easily detached and repaired at low costs and a substrate treating apparatus having the same.
  • the present disclosure provides a substrate support of which heat loss is reduced to improve process stability and product quality and a substrate treating apparatus having the same.
  • Each of the protrusions may have a thickness so that a top surface of the protrusion is disposed under a top surface of the ring unit.
  • the substrate support may further include a plurality of guide pins respectively disposed on the protrusions outside the side surface of the substrate, the plurality of guide pins being exposed to the upper sides of the protrusion parts, wherein at least one of the support pins and the guide pins is disposed on at least three positions of the protrusions along a circumference of the ring unit.
  • Each of the guide pins may be disposed on the protrusion on which the support pin is disposed or on which the support pin is not disposed.
  • Each of the support pins may have a diameter that gradually decreases upward along a longitudinal direction thereof, and each of the guide pins may have an inclined surface that is inclined downward from an upper portion thereof.
  • a top surface of each of the guide pins may have a height higher than that of each of the support pins.
  • a substrate treating apparatus includes: a chamber having a substrate treating space; a heating block disposed on an upper portion of the chamber; and a substrate support disposed inside the chamber to face the heating block, the substrate support being configured to support the substrate; wherein the substrate support includes at least one of a plurality of support pins and a plurality of guide pins which are detachable to the substrate support.
  • the substrate support may include an annular ring unit and protrusions, each having a length so that the protrusion protrudes from an inner surface of the ring unit and is disposed inside of a side surface of the substrate, wherein the protrusions may be spaced apart from each other along a circumference of the ring unit, and the support pins and the guide pins may be mounted on the protrusions.
  • Each of the protrusions may have first and second through-holes that vertically pass through the protrusion from an end of the protrusion toward the ring unit, each of the support pins may be detachably disposed in the first through-hole; and each of the guide pins may be detachably disposed in the second through-hole.
  • the support pin may be disposed on at least four to eight positions of the substrate support.
  • a top surface in a region of the protrusion in which the first through-hole may be lower than that in a region of the protrusion in which the second through-hole is defined.
  • the substrate support including the support pin that is capable of reducing the contact surface with the substrate while stably supporting the substrate in various substrate treating processes may be provided to effectively prevent heat loss of the substrate from occurring.
  • the guide pin capable of guiding the movement of the substrate so that the substrate is aligned at the desired position on the substrate support when the substrate is elevated may be disposed on the substrate support.
  • the guide pin may be disposed on the side surface of the substrate seated on the substrate support to prevent the substrate from being separated, thereby stably supporting the substrate.
  • the support pin and the guide pin may be detachably disposed on the substrate support. Therefore, when the support pin and the guide pin in contact with the substrate to support the substrate are worn by the contact thereof, the support pin and the guide pin may be easily replaced to easily repair the substrate support. In addition, the repair costs may be reduced.
  • the substrate support when the substrate support is provided in the RTP device, the substrate support may contact and support the substrate through the support pin and may stably support the rotating substrate through the guide pin at a position spaced apart from the side surface of the substrate.
  • the contact surface between the substrate support and the substrate may be effectively reduced, and the heat loss through the contact area may be prevented to allow the substrate to have uniform temperature distribution. Therefore, the produced substrate may be improved in quality.
  • FIG. 1 is a schematic view of a substrate treating apparatus in accordance with an embodiment.
  • FIG. 2 is a schematic view of a substrate support in accordance with an embodiment.
  • FIG. 3 is a cross-sectional view of the substrate support in accordance with an embodiment.
  • FIG. 4 is a conceptual view illustrating an arrangement of a support pin and a guide pin in accordance with a modified embodiment.
  • FIG. 5 is a view comparing a temperature distribution of a substrate heated by the substrate treating apparatus to which a substrate support in accordance with the modified embodiment is applied with that of a substrate in accordance with a related art.
  • FIG. 6 is a view comparing a thermal deformation of the substrate heated by the substrate treating apparatus to which the substrate support in accordance with the modified embodiment is applied with that of the substrate in accordance with a related art.
  • FIG. 1 is a schematic view of a substrate treating apparatus in accordance with an embodiment
  • FIG. 2 is a schematic view of a substrate support in accordance with an embodiment
  • FIG. 3 is a cross-sectional view of the substrate support in accordance with an embodiment
  • FIG. 4 is a conceptual view illustrating an arrangement of a support pin and a guide pin in accordance with a modified embodiment.
  • FIG. 2a is a plan view illustrating a state where a substrate is seated on the substrate support in accordance with an embodiment
  • FIG. 2b is a schematic view illustrating a state where the substrate support is connected to three protrusions of a plurality of protrusions disposed on the substrate support in accordance with an embodiment
  • FIGS. 4a to 4d are schematic views illustrating various arrangements of the support pin and the guide pin in accordance with a modified embodiment.
  • a substrate treating apparatus 1000 in which a substrate support 400 is mounted in accordance with an embodiment includes a chamber having a treating space in which a substrate S loaded therein is treated, a heating block 200 disposed on an upper portion of the chamber 100 to supply heat, for example, radiant energy into the chamber 100, and a base plate 300 disposed on a lower portion of the chamber 100 and including a substrate rotation unit 310 for rotating the substrate S loaded into the chamber 100.
  • the substrate support 400 supporting the substrate S is disposed on an upper portion of the substrate rotation unit 310 to face the heating block 200 in the chamber 100.
  • the substrate treating apparatus 1000 further includes a process control unit (not shown) measuring an internal temperature, an internal pressure, and a temperature of the substrate S during a substrate treating process and controlling internal atmosphere of the chamber 100 by using the measured values. Therefore, the substrate treating apparatus 1000 may control internal atmosphere of the chamber 100.
  • a process control unit (not shown) measuring an internal temperature, an internal pressure, and a temperature of the substrate S during a substrate treating process and controlling internal atmosphere of the chamber 100 by using the measured values. Therefore, the substrate treating apparatus 1000 may control internal atmosphere of the chamber 100.
  • the substrate S may be a substrate having a disc shape treated in a general rapid thermal processing (RTP) device.
  • the substrate S may have a predetermined diameter (approximately 300 mm), and a wafer that serves as a base of a semiconductor device is exemplified.
  • the chamber 100, the heating block 200, and the base plate 300 are not limited to any specific configurations. Therefore, the chamber 100, the heating block 200, and the base plate 300 will be simply described below.
  • the chamber 100 may have a block shape having an inner space that is opened vertically.
  • the inner space of the chamber 100 may have a shape corresponding to that of the substrate S loaded into the chamber 100.
  • a substrate treating space having a cylindrical shape corresponding to the disc shape of the substrate S is defined inside the chamber 100.
  • An opening 110 through which the substrate S is loaded or unloaded and an opening/closing unit (not shown) for opening or closing the opening 110 are defined in one surface of the chamber 100.
  • the opening 110 may have a diameter greater than that of the substrate S so that the substrate S is easily loaded or unloaded through the opening 110.
  • a substrate transfer unit 120 for loading or unloading the substrate S into or from the chamber 100 may be provided in the chamber 100.
  • a transfer unit having a robot arm that is provided as the substrate transfer unit 120 may be disposed outside the opening 110.
  • the substrate transfer unit 120 moves the robot arm forward into the chamber 100 through the opening 110.
  • an elevation pin 320 mounted on the substrate rotation unit 310 to vertically elevate the substrate S lifts the substrate S up to separate the substrate S from the substrate support.
  • the robot arm may contact and support a bottom surface of the substrate S to transfer the substrate S to the outside of the chamber 100.
  • the present disclosure is not limited thereto.
  • various substrate transfer units 120 capable of loading and unloading the substrate S into/from the chamber 100 may be applied to the current embodiment.
  • the heating block 200 is disposed on the upper portion of the chamber 100 to cover and seal a top surface of the chamber 100 and plays a role as a heat supply source for supplying heat, for example, radiant energy into the chamber 100.
  • the heating block 200 in accordance with an embodiment may supply heat into the chamber 100 at a temperature increasing rate of approximately 30°C to approximately 100°C per unit time (second) to maintain the internal atmosphere of the chamber 100 at a temperature ranging from approximately 200°C to approximately 600°C.
  • second unit time
  • various heat supply sources that are capable of providing various internal atmospheres of the chamber 100, for example, various process temperatures may be applied to the heating block 200.
  • a sealing unit may be disposed on a coupling surface between the heating block 200 and the chamber 100 to seal the heating block 200 and the chamber 100.
  • a plurality of heating lamps 210 generating radiant energy may be disposed in the heating block 200.
  • the heating lamp 210 is disposed in the heating block 200 to face the top surface of the chamber 100, thereby radiating near infrared energy onto the substrate S.
  • a halogen lamp is exemplified as the heating lamp 210.
  • the current embodiment is not limited thereto.
  • various kinds of lamps capable of generating radiant energy for example, arc lamps may be applied as the heating lamp 210.
  • a gas supply unit (not shown) supplying a process gas into the chamber 100 that is coupled to the lower portion of the heating block 200 is disposed in the heating block 200.
  • the gas supply unit (not shown) may be provided as various devices supplying a process gas used in the general rapid RTP device.
  • the base plate 300 is disposed on the lower portion of the chamber 100 to seal a bottom surface of the chamber 100.
  • a sealing unit may be disposed on a coupling surface between the base plate 300 and the chamber 100 to seal the base plate 300 and the chamber 100.
  • the base plate 300 is disposed to face a bottom surface of the heating block 200.
  • the substrate support 400 on which the substrate S is seated, the substrate rotation unit 310 disposed on a lower portion of the substrate support 400 to horizontally rotates the substrate support 400, and the elevation pin 320 disposed on an upper portion of the substrate rotation unit 310 to protrude upward from the substrate rotation unit 310 and lift the substrate may be disposed on the base plate 300.
  • a substrate rotation unit provided in the general RTP device may be applied to the substrate rotation unit 310.
  • the substrate rotation unit 310 may rotate the substrate support 400 and the substrate S seated on the substrate support 400 at a desired rotation rate during the substrate treating process.
  • the substrate rotation unit 310 capable of rotating the substrate S at a rate of approximately 100 rpm and approximately 240 rpm is exemplified.
  • the heating block 200, the chamber 100, and the base plate 300 are coaxially aligned with each other to form a sealed reaction space inside the chamber 100.
  • the heating lamp 210 and the substrate support 400 are disposed in the upper and lower portions of the chamber 100 to face each other, respectively.
  • the substrate S is seated on the top surface of the substrate support 400 to receive heat from the heating lamp (not shown).
  • the substrate support 400 and the substrate S supported by the substrate support 400 may be horizontally rotated by the substrate rotation unit 310 to uniformly supply heat to the substrate S.
  • the substrate support 400 includes an annular ring unit 410 having an inner diameter greater than a diameter of the substrate S, a plurality of protrusions 420 inwardly protruding from an inner surface of the ring unit 410 and spaced apart from each other, and a plurality of support pins 431 respectively disposed on the protrusions 420 to face an edge of the bottom surface of the substrate S and exposed to upper sides of the protrusions 420.
  • the substrate support 400 may further include a plurality of guide pins 432 respectively disposed on the protrusions 420 outside a side surface of the substrate S and exposed to the upper sides of the protrusions 420.
  • the support pins 431 and the guide pins 432 may be detachably disposed on the protrusions 420, respectively.
  • Support units 430 (431 and 432) may be disposed on at least three positions of the substrate support 400.
  • the support pins 431 may be disposed on at least four to eight positions of the substrate support 400.
  • the guide pins 432 may be disposed on at least three positions of the substrate support 400.
  • the guide pins 432 may be disposed on the protrusions 420 on which the support pins 431 are disposed or on which the support pins 431 are not disposed, respectively.
  • a top surface of each of the support pins 431 may contact an edge of the bottom surface of the substrate S, and each of the guide pins 432 may be disposed outside on the side surface of the substrate S.
  • the substrate S may be supported on the substrate support 400.
  • the support unit 430 may be disposed on various positions of the substrate support 400. At least one of the support pins 431 and the guide pins 432 may be disposed along a circumference of the ring unit 410, and thus the substrate S may contact the pins 431 and 432 and be supported by the pins 431 and 432. For example, when the support pin 431 is not disposed on the protrusion 420, the substrate S may directly contact a top surface of the protrusion 420 and be supported by the protrusion 420. Also, when the guide pin 432 is not disposed to the protrusion 420, an inner surface of the ring unit 410 may be disposed on the side surface of the substrate S to prevent the substrate S from being separated in left and right directions when the substrate S is rotated.
  • the protrusion 420 and the support pin 431 may have a thickness and a length so that the top surface of the protrusion 420 or the top surface of the support pin 431 disposed on the protrusion 420 are disposed under a top surface of the ring unit 410.
  • the protrusion 420 may have a thickness so that the top surface of the protrusion 420 is flush with the top surface of the ring unit 410.
  • the ring unit 410 plays a role as a body of the substrate support 400.
  • the ring unit 410 may be manufactured in a shape corresponding to that of the substrate S.
  • the ring unit 410 having an annular shape corresponding to the disc shape of the substrate S is exemplified.
  • the ring unit 410 may have an inner diameter greater than the diameter of the substrate S so that the ring unit 410 is spaced a predetermined distance outward from the side surface of the substrate S.
  • heat loss of the substrate S may be prevented due to the contact with the ring unit 410 in the substrate treating process, for example, the RTP process.
  • the top surface of the ring unit 410 may be parallel to the bottom surface of the heating block 200.
  • the bottom surface of the ring unit 410 may be manufactured in a shape corresponding to that of the top surface of the substrate rotation unit 310 on which the ring unit 410 is seated.
  • a slot is defined in the bottom surface of the ring unit 410 in a direction crossing the bottom surface of the ring unit 410 to extend along the circumference of the ring unit 410. At least a portion of the substrate rotation units 310 is inserted into the slot.
  • a ring unit coupling unit (not shown) may be disposed on the contact surface between the ring unit 410 and the substrate rotation unit 310 to couple to the ring unit 410 to the substrate rotation unit 310, and the ring unit 410 may be mounted on the substrate rotation unit 310 through the ring unit coupling member (not shown).
  • the rotation of the substrate rotation unit 310 may be transferred to the ring unit 410.
  • the ring unit 410 may be formed of a material used in an attached device supporting the substrate in the general RTP device, for example, a quartz material.
  • Each of the protrusions 420 may extend by at a predetermined length from the inner surface of the ring unit 410 toward a center of the ring unit 410, and the protrusions 420 are spaced apart from each other along the circumference of the ring unit 410 on at least three positions of the inner surface of the ring unit 410.
  • the protrusions 420 spaced at the same angle from each other about a vertical central axis of the ring unit 410 and disposed on eight positions of the inner surface of the ring unit 410 are exemplified.
  • Each of the protrusions 420 may have a thickness so that the top surface of the protrusion 420 is disposed under the top surface of the ring unit 410.
  • the ring unit 410 may be disposed outside the side surface of the substrate S to prevent the substrate S from being separated to the outside of the ring unit 410 when the substrate S is rotated.
  • the current embodiment is not limited thereto.
  • the protrusion 420 may have a thickness so that the top surface of the protrusion 420 is flush with the top surface of the ring unit 410.
  • the protrusion 420 may have a length longer than that corresponding to a difference between the inner diameter of the ring unit 410 and the diameter of the substrate S.
  • a first through-hole 421 and a second through-hole 422 vertically passing through the protrusion 420 from an end of the protrusion 420 toward the ring unit 410 may be defined in the protrusion 420.
  • the support pin 431 that will be described below may be detachably disposed in the first through-hole, and the guide pin 432 that will be described below may be detachably disposed in the second through-hole.
  • the protrusion 420 may have a thickness so that the top surface in which the first through-hole 421 is defined may be lower than the top surface in which the second through-hole 422 is defined.
  • the protrusion 420 may have a multistage top surface having a stair shape of which a thickness gradually decreases from the inner surface of the ring unit 410 toward to the end of the protrusion 420.
  • Each of the pair of through-holes 421 and 422 may have a diameter corresponding to a size of the support unit 430.
  • a coupling unit (not shown) for coupling the support unit 430, for example, a thread line may be disposed on an inner wall of each of the pair of through holes 421 and 422.
  • Each of the support unit 430 includes the support pin 431 coupled to the first through-hole to contact an edge of the bottom surface of the substrate S and the guide pin 432 coupled to the second through-hole to face the side surface of the substrate S.
  • the support units 430 may be spaced apart from each other along the circumference of the ring unit 410 and be respectively disposed on the protrusions 420.
  • the guide pin 432 may be disposed on the protrusion 420 on which the support pin 431 is disposed or on which the support pin 431 is not disposed.
  • Each of the support pin 431 and the guide pin 432 may be divided into a lower body which is inserted into each of the through-holes 421 and 422 of the protrusion 420 and an upper body that protrudes upward from the top surface of the protrusion 420.
  • a coupling unit (not shown) corresponding to the coupling unit (not shown) disposed on each of the inner walls of the pair of through-holes 421 and 422 may be disposed on the lower body.
  • a thread line corresponding to the thread line on the inner wall may be disposed on the lower body of each of the support pin 431 and the guide pin 432, and the support unit 430 may be detachably mounted on the protrusion 420 through the thread line.
  • the top surface of the guide pin 432 may have a height higher than that of the support pin 431.
  • the support pin 431 and the guide pin 432 may be disposed in the first and second through-holes 421 and 422 to support the substrate S, respectively.
  • the support pin 431 is disposed in the first through-hole 421 and contact the bottom surface of the substrate S at a position spaced apart from the end of the substrate S, thereby supporting the substrate S.
  • the guide pin 432 may be disposed in the second through-hole 422 and spaced apart outward from the side surface of the substrate S in parallel with the substrate S, thereby preventing the substrate S from being separated.
  • the support pin 431 may have a shape of which a diameter gradually decreasing toward an upper side thereof in a longitudinal direction. Also, a plane having a predetermined area may be defined on the top surface of the upper body of the support pin 431 to face the bottom surface of the substrate S. The top surface of the support pin 431 and the bottom surface of the substrate S may point-contact or surface-contact therebetween with a predetermined area to support the substrate S. A roughness (not shown) or a contact pad (not shown) may be further disposed on the top surface of the support pin 431 to increase a friction force of the contact surface between the support pin 431 and the substrate S, thereby preventing the substrate S from being slid.
  • the guide pin 432 When the substrate S is seated on the substrate support 400, the guide pin 432 may have a top surface and a side surface so that the top surface of the guide pin 432 is aligned with the top surface of the substrate S, and the side surface of the guide pin 432 surface-contact the side surface of the substrate S.
  • the guide pin 432 may have an inclined surface inclined downward from an upper portion to a lower portion thereof, and thus the guide pin 432 may guide the substrate S so that the substrate S is disposed at a desired position on the substrate support 400 while the substrate S is elevated.
  • the support pin 431 may be variously arranged and coupled to the protrusion 420.
  • the support pins 431 may be spaced apart from each other along the circumference of the ring unit 410 and be coupled to three to eight positions of the protrusions 420 to support the substrate S, Preferably, the support pins 431 may be disposed on four to eight positions of the protrusions 420.
  • the number of support pins 431 coupled to the protrusions 420 is proportional to a rotation rate of the substrate S rotated by the substrate treating apparatus 1000.
  • three support units 430 may be spaced apart from each other and respectively disposed on the protrusions 420 with respect to the substrate S rotated at a rotation rate of approximately 100 rpm to approximately 150 rpm, and four to eight support pins 431 may be respectively disposed on the protrusions 420 with respect to the substrate S rotated at a rotation rate of approximately 240 rpm.
  • the current embodiment is not limited to the number of support pins.
  • the number of support units 430 and protrusions 420 provided on the substrate support 400 may be further add by number enough to stably support the substrate to correspond to various rotation rates of the substrate in the substrate treating process for treating various substrates.
  • the guide pins 432 may be spaced apart from each other along the inner circumferential surface of the ring unit 432 and disposed on at least three to eight positions of the protrusion 420. As shown in FIG. 4a, the guide pins 432 may be disposed on three positions of the protrusions 420 to support the side surface of the substrate S, respectively. Also, as shown in FIGS. 4b to 4d, the guide pins 432 may be spaced apart from each other to support the side surface of the substrate S at four positions of the protrusion 420.
  • the support pins 431 and the guide pins 432 may variously vary in position.
  • the substrate S thermally treated by the substrate treating apparatus 1000 in which the substrate support 400 is provided may be prevented from being thermally deformed due to heat loss and heat stress thereof when compared to that of the related art.
  • the substrate support 400 in which four support units 430 are spaced apart from each other and respectively mounted on the protrusion parts 420 as the substrate support 400 provided in the substrate treating apparatus 1000 is exemplified.
  • heat applied onto the substrate S may have a temperature of approximately 500°C.
  • FIG. 5 is a view comparing a temperature distribution of a substrate heated by the substrate treating apparatus to which a substrate support in accordance with the modified embodiment is applied with that of a substrate in accordance with a related art
  • FIG. 6 is a view comparing a thermal deformation of the substrate heated by the substrate treating apparatus to which the substrate support in accordance with the modified embodiment is applied with that of the substrate in accordance with a related art
  • FIG. 5a is a schematic view illustrating temperature distribution of a substrate heated by a substrate treating apparatus in accordance with the related art
  • FIG. 5b is a schematic view illustrating temperature distribution of a substrate heated by the substrate treating apparatus in accordance with an embodiment
  • FIG. 6a is a schematic view illustrating thermal deformation of the substrate heated by the substrate treating apparatus in accordance with the related art
  • FIG. 6b is a schematic view illustrating thermal displacement of the substrate heated by the substrate treating apparatus in accordance with the embodiment.
  • results obtained by comparing a temperature deviation of a substrate treated in the substrate treating apparatus 1000 in accordance with an embodiment to that of a substrate treated in a substrate treating apparatus in accordance with the related art are as follows.
  • a temperature gradient having a concentric shape is formed on a top portion of a substrate S. It is seen that temperature gradients of 484.76°C, 490.57°C, 496.38°C, 502.18°C, 507.99°C, and 513.80°C are formed from the end of the substrate toward the center of the substrate (see FIG. 5a).
  • a uniform temperature region is formed on the top surface of the substrate S thermally treated in the substrate treating apparatus 1000 in accordance with an embodiment except for a predetermined region of the edge of the substrate S in contact with each of the supporting parts 430. That is, a region having a high temperature is defined on a relatively wide area when compared to that of the substrate in accordance with the related art. It is seen that the substrate S may have temperature gradients of 500.85°C, 503.27°C, 505.68°C, 505.68°C, 508.09°C, 510.50°C, and 512.91°C from the contact surface between the substrate S and the supporting parts 430 toward a center of the substrate S.
  • the substrate S has a temperature gradient of 512.91°C on a relatively wide area when compared to that of the substrate in accordance with the related art (see FIG. 5b). Also, the substrate S in accordance with the related art has a temperature deviation of approximately 29°C, and the substrate S in accordance to an embodiment has a temperature deviation of approximately 12°C. Therefore, the substrate treating apparatus 1000 in accordance with an embodiment may decrease a temperature deviation of the substrate when compared that of the substrate in accordance with the related art.
  • results obtained by comparing thermal warpage of the substrate treated in the substrate treating apparatus 1000 in accordance with an embodiment to that of the substrate in accordance with the related art are as follows.
  • the substrate S treated in the substrate treating apparatus 1000 in accordance with an embodiment has a shape in which the deformation gradually increases inward about the contact area of the supporting part 430, and the deformation is a the magnitude of 0.0521 mm in the vicinity of the contact point with the supporting part 430 and 0.2603 mm at a central position of the substrate S.
  • the substrate treating apparatus 1000 in accordance with an embodiment may prevent the substrate from being deformed when compared to that in accordance with the related art.
  • RTP device is described as an example in the foregoing embodiment, the embodiment can be applied to various equipment for performing the substrate treating process.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention concerne un support de substrat et un appareil de traitement de substrat comportant ledit support de substrat. Le support de substrat comprend une unité annulaire dont un diamètre intérieur est supérieur à un diamètre du substrat, une pluralité de protubérances qui font saillie vers l'intérieur à partir d'une surface intérieure de l'unité annulaire, la pluralité de protubérances étant espacées les unes des autres, une pluralité de tiges de support disposées respectivement sur les parties protubérances pour faire face à un bord d'une surface inférieure du substrat, la pluralité de tiges de support étant exposées à des côtés supérieurs des protubérances, et une pluralité de tiges de guidage disposées respectivement sur les protubérances à l'extérieur de la surface latérale du substrat. Ledit support de substrat peut empêcher la perte thermique du substrat de se produire, et le support de substrat peut être facilement enlevé et réparé.
PCT/KR2014/000452 2013-02-06 2014-01-16 Support de substrat et appareil de traitement de substrat comportant ledit support de substrat WO2014123310A1 (fr)

Applications Claiming Priority (2)

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KR1020130013281A KR101432157B1 (ko) 2013-02-06 2013-02-06 기판 지지대 및 이를 구비하는 기판 처리 장치
KR10-2013-0013281 2013-02-06

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Cited By (3)

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GB2553792A (en) * 2016-09-14 2018-03-21 Rec Solar Pte Ltd Tray for holding at least one wafer
US11018045B2 (en) 2017-11-16 2021-05-25 Samsung Electronics Co., Ltd. Deposition apparatus including upper shower head and lower shower head
US11345998B2 (en) 2017-11-16 2022-05-31 Samsung Electronics Co., Ltd. Deposition apparatus including upper shower head and lower shower head

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KR102006435B1 (ko) * 2017-09-01 2019-08-01 주식회사 한화 보트 장치
KR102099110B1 (ko) 2017-10-12 2020-05-15 세메스 주식회사 기판 정렬 장치, 기판 처리 장치 및 기판 처리 방법
KR102238691B1 (ko) * 2018-12-17 2021-04-12 주식회사 선익시스템 웨이퍼 크기 확장 장치 및 이를 포함하는 웨이퍼 정렬 장치
KR102214357B1 (ko) * 2018-12-18 2021-02-10 주식회사 선익시스템 웨이퍼 크기 확장 장치 및 이를 포함하는 웨이퍼 정렬 장치
KR102185623B1 (ko) * 2019-05-20 2020-12-02 주식회사 테스 박막증착장치 및 박막증착방법
KR102653264B1 (ko) * 2019-12-16 2024-04-02 에이피시스템 주식회사 로드락 장치 및 기판 정렬 방법

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2553792A (en) * 2016-09-14 2018-03-21 Rec Solar Pte Ltd Tray for holding at least one wafer
US11018045B2 (en) 2017-11-16 2021-05-25 Samsung Electronics Co., Ltd. Deposition apparatus including upper shower head and lower shower head
US11345998B2 (en) 2017-11-16 2022-05-31 Samsung Electronics Co., Ltd. Deposition apparatus including upper shower head and lower shower head

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TW201442141A (zh) 2014-11-01
TWI515822B (zh) 2016-01-01
KR20140100221A (ko) 2014-08-14
KR101432157B1 (ko) 2014-08-20

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