GB2553792A - Tray for holding at least one wafer - Google Patents
Tray for holding at least one wafer Download PDFInfo
- Publication number
- GB2553792A GB2553792A GB1615589.7A GB201615589A GB2553792A GB 2553792 A GB2553792 A GB 2553792A GB 201615589 A GB201615589 A GB 201615589A GB 2553792 A GB2553792 A GB 2553792A
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- GB
- United Kingdom
- Prior art keywords
- tray
- protrusions
- wafer
- back side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67383—Closed carriers characterised by substrate supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A tray 10 for holding at least one wafer, comprising at least one tray pocket 20 with a recess for holding the wafer such that a front side and a back side of the wafer can be coated by, for example, a gas state to a solid state deposition technique such as PECVD, wherein the tray pocket 20 comprises protrusions 40, 41, 42, 43 extending from an inner rim 17 of the tray pocket 20, the protrusions 40, 41, 42, 43 supporting the back side of the wafer, such that only a minor part of the outer edge of the back side of the wafer is supported by the tray 10. Less than 2% of the surface area of the back side of the wafer may be supported by the protrusions 40, 41, 42, 43. The pocket 20 may be rectangular or square and have equidistant trapezoidal protrusions at the corners or centres of the pocket 20 sides.
Description
(54) Title of the Invention: Tray for holding at least one wafer
Abstract Title: Tray for holding a wafer which contacts a minor fraction of the wafer outer edge (57) A tray 10 for holding at least one wafer, comprising at least one tray pocket 20 with a recess for holding the wafer such that a front side and a back side of the wafer can be coated by, for example, a gas state to a solid state deposition technique such as PECVD, wherein the tray pocket 20 comprises protrusions 40, 41,42, 43 extending from an inner rim 17 of the tray pocket 20, the protrusions 40, 41,42, 43 supporting the back side of the wafer, such that only a minor part of the outer edge of the back side of the wafer is supported by the tray 10. Less than 2% of the surface area of the back side of the wafer may be supported by the protrusions 40, 41,42, 43. The pocket 20 may be rectangular or square and have equidistant trapezoidal protrusions at the corners or centres of the pocket 20 sides.
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Fig. 9
TRAY FOR HOLDING AT LEAST ONE WAFER
FIELD OF THE INVENTION
The invention relates to a tray for holding at least one wafer. Furthermore, the present invention relates to a coating device for depositing a coating on each of opposing surfaces of a wafer.
TECHNICAL BACKGROUND
Trays for holding at least one wafer such that both opposing sides of the wafer can be coated are well known in the state of the art. The coating of both opposing sides is especially important for wafers to be used as solar cells. The tray generally comprises several tray pockets, wherein each pocket comprises one recess for receiving and holding the wafer during a coating process. The wafer can be a silicon wafer. The opposite sides of the wafer are to be provided with a coating. The coating is applied with a gas state to solid state process, e.g., chemical vapour deposition (CVD) or plasma enhanced chemical vapour deposition (PECVD).
One disadvantage of trays known in the state of the art may be that supporting elements supporting the wafer and holding the wafer in position during the coating process cover a substantial portion of a surface area of a back side of the wafer. This portion of the back side of the wafer, i.e., the portion of the wafer where the surface of the back side of the wafer is covered by the supporting elements, will not be covered with a deposition material in the coating process, since the supporting elements hinder the deposition material of coming in contact with the surface of the wafer. Therefore, a substantial portion of the surface area of the wafer will not be coated when held with trays according to the state of the art. Such non-coated surface areas may result in insufficient local surface passivation and, finally, in a reduced conversion efficiency of a solar cell produced with the wafer.
SUMMARY OF THE INVENTION
One object of the present invention is to provide a tray for holding at least one wafer, wherein a particularly large portion of the surface area of both opposing sides of the wafer can be coated.
This object is solved by a tray for holding at least one wafer according to claim 1.
In particular, the object is solved by a tray for holding at least one wafer, wherein the tray comprises at least one tray pocket with a recess for receiving and holding the wafer such that a front side of the wafer and a back side of the wafer can be coated, in particular with a gas state to a solid state deposition, wherein the tray pocket comprises protrusions extending from an inner rim of the tray pocket, the protrusions being configured for supporting the back side of the wafer, in particular an outer edge of the back side of the wafer, such that the back side of the wafer being held in the recess is supported by the tray such that only a minor part, in particular less than 25%, preferably less than 8%, more preferably less than 2%, of the outer edge of the back side of the wafer is supported by the tray.
One advantage thereof is that, in general, a very large portion of both sides of the wafer, i.e., the whole surface area of the front side and a very large portion of the back side of the wafer, can be coated/a coating can be deposited thereon. By supporting the wafer with protrusions which are in contact with the back side of the wafer, the wafer can be held securely in the recess of the tray pocket recess of the tray, normally.
The protrusions can be configured for supporting the back side of the wafer such that the back side of the wafer being held in the recess is supported by the tray such that less than 2%, preferably less than 1%, more preferably less than 0.5%, of a surface area of the back side of the wafer is supported by the tray. One benefit of this is that, generally, an even larger portion of the back side of the wafer is not covered by protrusions supporting the wafer and a coating can be deposited on a larger portion of the surface area of the back side of the wafer.
The recess of the at least one tray pocket can have a rectangular form, in particular a square form. One advantage thereof is that generally the wafer can be held even more securely. Furthermore, when the recess has a square form, the orientation of the wafer while placing the wafer in the recess is irrelevant. Normally, this leads to fewer damages of the wafer.
In one embodiment, the protrusions of the tray pocket are each disposed at a centre of inner sides of tray pocket. One advantage thereof, i.e., of having the protrusions of the tray pocket each disposed at the centre, i.e., the middle, of the inner sides of the tray pocket, is that generally the wafer can be held even more securely. Furthermore, acting forces are distributed across the tray in a better way. Fewer protrusions are needed, normally. Also, generally, tilting of the wafer in the recess is prevented.
The tray pocket can comprise corner protrusions in the corners of the recess, the corner protrusions being configured for supporting the back side of the wafer, in particular an outer edge of the back side of the wafer. Advantageous of this is that the wafer can be held more securely, normally. One further advantage thereof is that tilting of the wafer in the recess is prevented, generally.
The tray pocket can comprise at least two protrusions, in particular at least three protrusions, preferably at least four protrusions. By having several protrusions the tray can support the wafer more securely, in general. Furthermore, acting forces are distributed over several protrusions. Thus, the each protrusion has to carry only one portion of the acting forces, generally.
In a further embodiment, the at least two protrusions, in particular the at least three protrusions, preferably the at least four protrusions, of the tray pocket are arranged equidistantly along the inner rim of the tray pocket. Thus, generally, the forces acting on the protrusions are distributed more favorably. Furthermore, normally, tilting of the wafer is prevented even more.
Lower sides of the protrusions which are opposite to upper sides of the protrusions, respectively, the upper sides of the protrusions being configured for contacting and supporting the back side of the wafer, and/or lower sides of the corner protrusions which are opposite to upper sides of the corner protrusions, respectively, the upper sides of the corner protrusions being configured for contacting and supporting the back side of the wafer, can be flush with a lower surface of the tray. Generally, one advantage thereof is that the protrusions and/or corner protrusions are reinforced on the back side of the tray, i.e., the side of the tray which is closer to the back side of the wafer than the front side of the wafer when the wafer is held by the tray. The risk that protrusions and/or corner protrusions break off due to forces exerted on the protrusions is minimized since the protrusions and/or corner protrusions can sustain larger forces, generally. Thus, the wafer can be held more securely, normally.
The tray pocket can be symmetrical to an axis which extends perpendicularly to a front side of the tray and through the centre of the recess of the tray pocket.
Generally, one advantage thereof is that producing the tray is made technically easier. The tray pocket and the recess of the tray pocket can be created very easily. This saves costs for producing the tray, normally.
The protrusions can have a trapezoidal shape. Generally, this allows the wafer to be held securely while covering only a very small fraction of the surface area of the back side of the wafer. Furthermore, normally, the trapezoidal shape is very robust and can resist high forces.
The protrusions can have a width along the inner rim of the tray pocket of less than 10%, in particular less than 5%, preferably less than 2%, of a width of the inner rim from which the protrusions extend. One advantage thereof is that, generally, an even larger percentage of the surface area of the back side of the wafer can be coated.
The protrusions can have a width along the inner rim of the tray pocket of less than 10 mm, in particular less than 5 mm, preferably less than 2 mm. One advantage thereof is, normally, that an even larger part of the surface area of the back side of the wafer can be coated.
The protrusions can have a length perpendicular to the inner rim of the tray pocket of less than 10 mm, in particular less than 5 mm, preferably less than 2 mm. One advantage thereof is that, normally, an even larger part of the surface area of the back side of the wafer can be coated while the wafer can be held very securely in the recess of the tray pocket.
The tray pocket can comprise at least one protrusion at each of opposing inner sides of the tray pocket. By having one protrusion at one inner side of the four sides of the tray pocket, assuming a rectangular form, and one protrusion at the opposing side, generally, the wafer can held very securely with an especially low number of protrusions.
The object is also solved by a coating device according to claim 15. In particular, the object is solved by a coating device for depositing a coating on each of opposing surfaces of a wafer, the coating device comprising a coating chamber, and a tray as described above arranged within the coating chamber. One advantage thereof is that, in general, a very large portion of both sides of the wafer, i.e., the whole surface area of the front side and a very large portion of the back side of the wafer, can be coated/a coating can be deposited thereon in the coating chamber. By supporting the wafer with protrusions which are in contact with the back side of the wafer, the wafer can be held securely in the recess of the tray pocket of the tray during the coating of the wafer, normally. Thus, normally, the risk of wafers falling off the tray is reduced.
Hence, generally, the risk of damaging the coating device is reduced and a negative impact on the coating process (such as wafers covering the gas outlets) can be avoided.
It may be noted that possible features and/or benefits of embodiments of the present invention are described herein partly with respect to a tray and partly with respect to a coating device. A person skilled in the art will understand that features described for embodiments of an inventive tray may be applied in analogy in an embodiment of a coating device according to the invention, and vice versa. Furthermore, one skilled in the art will understand that features of various embodiments may be combined with or replaced by features of other embodiments and/or may be modified in order to come to further embodiments of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
In the following, embodiments of the invention will be described herein with reference to the enclosed drawings. However, neither the drawings nor the description shall be interpreted as limiting the invention.
Fig. 1 shows a frontal view of the front side of an embodiment of the tray according to the invention;
Fig. 2 shows a frontal view of the back side of the tray of Fig. 1;
Fig. 3 shows a frontal view of the front side of a tray pocket of the tray of Fig. 1;
Fig. 4 shows a frontal view of the back side of the tray pocket of Fig. 3;
Fig. 5 shows a perspective view of the tray pocket of Fig. 3;
Fig. 6 shows a detailed front view of one of the protrusions of Fig. 1;
Fig. 7 shows a detailed back view of one of the protrusions of Fig. 1;
Fig. 8 shows a detailed view of the leftmost and topmost tray pocket of Fig. 1;
and
Fig. 9 a schematic cross-section of an embodiment of a tray according to the invention.
The figures are only schematic representations and not to scale. Same reference signs indicate same or similar features.
DESCRIPTION OF PREFERRED EMBODIMENTS
Fig. 1 shows a frontal view of the front side 13 of an embodiment of the tray 10 according to the invention. Fig. 2 shows a frontal view of the back side 15 of the tray of Fig. 1. Fig. 3 shows a frontal view of the front side 13 of a tray pocket 20, 21, 22 of the tray 10 of Fig. 1. Fig. 4 show a frontal view of the back side 15 of the tray pocket
20, 21, 22 of Fig. 3. Fig. 5 shows a perspective view of the tray pocket 20, 21, 22 of Fig.
3.
The tray 10 comprises tray pockets 20, 21, 22 and has the outer form of a rectangle. The tray pockets 20, 21, 22 are aligned in 5 columns and 9 rows. Other configurations,
e.g., 4 columns by 6 rows, 5 columns by 10 rows or 4 columns by 5 rows, are possible.
Each tray pocket 20, 21, 22 comprises a recess 18. The recess 18 has the form of a hollow or a cavity. The recess 18 as well as the tray pocket 20, 21, 22 has a square form. Each recess 18 is adapted for receiving and holding one wafer (not shown). The wafer has a form which corresponds to the form of the recess 18. The embodiment shown in the figures is adapted to receive a square-formed wafer. The wafer can be a silicon wafer, in particular a silicon wafer for a solar cell. Other kinds of materials of the wafer are possible. Furthermore, the wafer can have a non-square rectangular, circular or elliptical form. Then, the recess 18 would have a corresponding non-square rectangular, circular or elliptical form. Also, the wafer can have a pseudo-square shape (square with rounded corners or non-regular hexagon). In this case, the recess 18 would also have a pseudo-square shape.
Each tray pocket 20, 21, 22 comprises protrusions 40, 41, 42, 43 (also called projections or pins) which extend from the inner rim 17 of the tray pocket 20, 21, 22 to the inside or centre of the recess 18. The tray pocket 20, 21, 22 comprises four protrusions 40, 41, 42, 43, one in the centre of each inner side of the four sides of the square of the recess 18, and four corner protrusions 30, 31, 32, 33 in the corners of the square-formed recess 18, respectively. The corner protrusions 30, 31, 32, 33 can be omitted. It is also possible that only two protrusions in the form of two opposing corner protrusions are provided, i.e., there are no protrusions at the sides of the recess. Also, it is possible that only four corner protrusions 30, 31, 32, 33, but no protrusions 40, 41, 42, 43 at the inner sides of the four sides of the square of the recess 18 are provided. Another possibility is that there are two protrusions 40, 41, 42, 43 on each inner side of the inner rim, i.e., there are eight protrusions 40, 41, 42, 43 (not counting corner protrusions 30, 31, 32, 33). The eight protrusions 40,41, 42, 43 can be distributed equally, i.e., the two protrusions 40, 41, 42, 43 at each side have the same distance from one another as the distance of the protrusions 40,41, 42, 43 to the corner of the tray pocket 20, 21, 22/recess 18.
Furthermore, it is possible to provide the protrusions 40,41, 42, 43 at another position along the inner rim 17 of the tray pocket 20, 21, 22. Also, two, three, five or more than five protrusions per tray pocket 20, 21, 22 are possible, wherein the corner protrusions 30, 31, 32, 33 are not counted. The centre of each inner side of the square has the same distance to both corners of the recess 18. The centre is the middle of each inner side of the square. The protrusions 40,41,42, 43 are provided equidistantly along the inner rim 17 of the tray pocket 20, 21, 22. Also, it is possible that the protrusions 40, 41,42, 43 are not provided equidistantly.
Each side of the square of each recess 18 is parallel to the corresponding side of the squares of the other recesses 18. I.e., each side of the tray pocket 20, 21, 22 is in parallel to the corresponding side of the squares of the other tray pockets 20, 21, 22.
Fig. 6 and Fig. 7 show a detailed view of one protrusion of a tray pocket 20, 21, 22 from the top and from the bottom, respectively. The protrusion 40, 41,42,43 has (in top view, cf. Fig. 3) the form of a trapezium. Other forms, e.g., the form of a rectangle, a square or an ellipse are also possible. The width of the protrusions 40, 41, 42, 43 along the inner rim 17 of the tray pocket 20, 21, 22 is ca. 3 mm. The width is measured along the inner rim 17 of the tray pocket 20, 21, 22, i.e., in Fig. 7 from the top left to the bottom right. The protrusions 40, 41, 42, 43 extend beyond the inner rim 17 of the tray pocket 20, 21, 22 to the inside of the recess 18 ca. 4 mm. The length of the protrusions 40, 41, 42, 43 is measured from the inner rim 17 of the tray pocket 20, 21, 22 into the direction to the centre of the recess 18.
The width and length of the recess 18 is 158 mm and 158 mm, respectively. By this, the wafer which has normally a size of 156 mm * 156 mm cannot fall off through the recess 18, when it is received and held in the recess 18 of the tray pocket 20, 21, 22 by the protrusions 40, 41, 42, 43 and/or the corner protrusions 30, 31, 32, 33. When the wafer moves as far as possible to one side within the recess 18, the wafer is still supported by the protrusions 40, 41, 42, 43 on the other side (opposite to the one side). The distance between two opposite protrusions 40, 41, 42, 43 is ca. 154 mm. The distance between two adjacent corner protrusions 30, 31, 32, 33 is ca. 148 mm.
Alternatively, the width and length of the recess 18 can be 159 mm and 159 mm, respectively. By this, a mono wafer with a size of 157 mm * 157 mm cannot fall through the recess 18, when it is received and held in the recess 18 of the tray pocket
20, 21, 22 by the protrusions 40, 41, 42, 43 and/or the corner protrusions 30, 31, 32,
33.
On the back side of the tray pocket 20, 21, 22, an elongated cavity 19 is provided immediately adjacent to the recess 18. The elongated cavity 19 is part of a kind of step structure at the back side of the tray pocket 20, 21, 22. The elongated cavity 19 runs in parallel to the inner rim 17 of one side of the tray pocket 20, 21, 22. At each back side of the square-formed tray pockets 20, 21, 22 are two elongated cavities 19, divided by the lower part 51 of the protrusion 40, 41, 42, 43. The depth of the elongated cavity is ca. 4 mm. The depth is measured from left to right for the most left cavity in Fig. 4. Two opposing elongated cavities of each tray pocket 20, 21, 22 have the same first depth. The other two opposing elongated cavities of each tray pocket 20, 21, 22 have the same second depth. The first depth is different from the second depth. The first depth can be ca. 4 mm. The second depth can be ca. 2 mm.
The upper side of the protrusion 40, 41,42, 43 as well as the upper side of the corner protrusions 30, 31, 32, 33 is ca. 0.8 mm below the plane of the front side 13 of the tray 10. I.e., the tray pockets 20, 21, 22 have a depth of 0.8 mm. The depth of the tray pocket 20, 21, 22 is measured from the surface of the tray 10 down to the upper side of the protrusions 40, 41, 42, 43. The upper side is also called the front side.
Corner protrusions 30, 31, 32, 33 are provided in the corners of the recess 18, i.e., in the corners of the tray pocket 20, 21, 22. The corner protrusions 30, 31, 32, 33 have the form of a quarter-circle and extend from the inner rim 17 of the tray pocket 20,
21, 22 to the inside of the recess 18. The radius of the quarter-circle is ca. 5 mm.
Two side pins 60, 60' are provided next to the tray pockets 20, 21, 22 in the most left and most right column in Fig. 1.1.e., there are two side pins 60, 60' left to each of the tray pockets 20, 21, 22 in the most left column and two side pins 60, 60' right to each of the tray pockets 20, 21, 22 in the most right column. Furthermore, there are two side pins 60, 60' above each of the tray pockets 20, 21, 22 in the top column and two side pins 60, 60' below each of the tray pockets 20, 21, 22 in the bottom column. The distance of the outer edge of each of the side pins 60, 60' to the edge of the tray pocket 20, 21, 22 is ca. 1.5 mm to ca. 2 mm, respectively. The side pins 60, 60' prevent the wafer from sliding out of the recess 18 or outside of the tray pocket 20, 21, 22. Each side pin 60, 60' has a cylindrical form with a diameter of about 3 mm and a height of about 3 mm.
The upper side and the lower side of the protrusions 40, 41,42, 43 is flat. Furthermore, the upper sides of the protrusions 40, 41,42, 43 and the lower sides of the protrusions
40,41, 42, 43 are parallel to each other.
The tray 10 can comprise or be made of metal, a metal alloy, plastic and/or carboncarbon composite material among others.
The tray 10 is adapted for holding wafers in a device for gas state to solid state deposition, in particular chemical vapour deposition (CVD), more particularly plasma enhanced chemical vapour deposition (PECVD). Only about 1.9% of the outer edge of the back side of the wafer, in particular of the length of the outer edge of the back side of the wafer, is covered by the protrusions 40, 41, 42, 43 of the side of the tray 10 which supports the wafer on the back side when the wafer is held within the recess 18 in the tray 10. For example, at least 0.5% of the outer edge of the back side of the wafer is supported by protrusions 40, 41, 42, 43. The inner rim 17 of the tray pocket 20, 21, 22 is also the outer boundary of the recess 18. The inner rim 17 of the tray pocket 20, 21, 22 is a lateral surface of the tray pocket 20, 21, 22. The inner rim 17 of the tray pocket 20, 21, 22 is the boundary surface between the material of the tray pocket 20, 21, 22 and the recess 18, wherein there is essentially no material in the recess 18, when no wafer is in the recess 18.
The percentage of the surface of the back side of the wafer covered by the protrusions 40, 41, 42,43 and by the corner protrusions 30, 31, 32, 33 is less than about 2%, preferably less than 1%, of the whole surface area, for example ca. 0.323%. For example, 0.148% of the surface area of the back side of the wafer is covered by protrusions 40, 41, 42,43. The front side of the wafer opposite to the back side of the wafer is not covered by any supporting element. Preferably, the wafer is only supported by the protrusions along the inner rim 17 of the tray pocket 20, 21, 22 and the corner protrusions, i.e., there are no other supporting elements in contact with the wafer. The outer edge of the back side of the wafer comes partly in contact with the upper side of the protrusions 40, 41, 42, 43 of the tray pocket 20, 21, 22.
The percentage of the outer edge of the back side of the wafer which is in contact or comes in contact with the tray pocket is less than 25%, preferably less than 8%, more preferably less than 2%. I.e., at least 75%, preferably at least 92%, more preferably at least 98% of the outer edge of the back side of the wafer is not in contact with any supporting elements of the tray 10. When there are no corner protrusions and only four protrusions 40, 41, 42, 43 per tray pocket 20, 21, 22, only about 12 mm of the outer edge of the wafer (i.e., four times the width of one protrusion which is ca. 3 mm) is in contact with the tray 10, i.e., in contact with supporting elements of the tray 10. Hence, only about 1.923% of the outer edge of the wafer (assuming a square-formed wafer with the dimension 156 mm * 156 mm) is in contact with the tray 10, in particular supporting elements of the tray 10. The supporting elements are the protrusions 40, 41, 42, 43 and/or the corner protrusions 30, 31, 32, 33.
Thus, a very large portion of the back side of the wafer and the outer edge of the back side of the wafer comes in contact with the gas during the coating process and a coating can be applied thereto. The area of contact between the protrusions 40, 41,
42,43 of the tray 10 and the wafer held by the tray 10 is very small. The minor part is defined as 50% or less.
The percentage of the outer edge of the back side of the wafer which is supported by protrusions of the tray 10 can be less than 5%, even less than 1%. For example, at ca.
0.323% of the outer edge of the back side of the wafer is supported by protrusions 40,
41, 42, 43 and/or corner protrusions 30, 31, 32, 33.
The wafer has a dimension of 156 mm by 156 mm for the calculations herein. Other dimensions of the wafer are possible.
For a wafer of the size of the dimension 157 mm * 157 mm, only about 1.911% of the outer edge of the wafer is in contact with the tray 10, in particular supporting elements of the tray 10, when there are no corner protrusions and only four protrusions 40, 41, 42, 43 per tray pocket 20, 21, 22.
Since the wafer has a dimension of 156 mm by 156 mm and there are four protrusions
40,41, 42, 43 at the inner rim 17 of the tray pocket 20, 21, 22, wherein each protrusions 40, 41, 42,43 has a width of 3 mm, and four corner projections/protrusions 30, 31, 32, 33 having the form of a quarter circle with a radius of 5 mm, the total length of the inner rim 17 of the tray pocket 20, 21, 22 is 4 * 156 mm = 624 mm and the total sum of the widths of the protrusions 40, 41, 42,43 and the corner protrusions 30, 31, 32, 33 along the inner rim 17 of the tray pocket 20, 21, 22 is about 40 mm (4*3 mm of the protrusions along the sides of the inner rim 17 of the tray pocket 20, 21, 22 plus 4*7 mm of the corner protrusions; the wafer having a dimension of 156 mm by 156 mm while the recess has a dimension of 158 mm by 158 mm is in contact with only 7 mm of the 10 mm length of each of the corner projections along one inner side of the tray pocket 20, 21, 22). Thus, about 6.410%, i.e., less than 7% and less than 8%, of the outer edge of the wafer is in contact with supporting elements of the tray 10.
For a wafer with the dimension of 157 mm * 157 mm, only about 6.370% of the outer edge of the wafer is in contact with supporting elements of the tray, if there are four protrusions 40, 41, 42,43 at the inner rim 17 of the tray pocket 20, 21, 22, wherein each protrusions 40, 41, 42, 43 has a width of 3 mm, and four corner protrusions 30, 31, 32, 33 having the form of a quarter circle with a radius of 5 mm.
If the corner protrusions 30, 31, 32, 33 have the form of a rectangular triangle wherein the two legs have a length of 8 mm and there are two protrusions 40, 41, 42, 43 on each side of the inner rim 17 of the tray pocket, the percentage of the outer edge of the wafer covered by corner protrusions 30, 31, 32, 33 and protrusions 40, 41, 42, 43 is about 12.739% (wafer dimension of 157 mm * 157 mm) and about 12.821% (wafer dimension of 156 mm * 156 mm).
For a wafer with dimension 157 mm * 157 mm, if there are four triangle corner protrusions 30, 31, 32, 33 with leg lengths of 8 mm and four protrusion 40, 41, 42,43 of a trapezoidal shape, the area covered by the protrusions is about 82 mm (about (7 mm * 7 mm) / 2 - 7 mm - 6mm for each corner protrusion 30, 31, 32 and about 3 mm* 3 mm for each protrusion 40, 41, 42,43). Thus, about 0.333% of the area of the back side of the wafer is covered. For the same forms and sizes of the corner protrusions 30, 31, 32, 33 and the protrusions 40, 41, 42, 43 for a wafer with the dimension 156 mm * 156 mm, about 0.337% of the area of the back side of the wafer is covered.
Alternatively, the four rectangular triangle corner protrusions 30, 31, 32, 33 can have a leg size of 14 mm, respectively.
The surface area covered by supporting elements, e.g., protrusions 40, 41, 42,43 for supporting the wafer, is not reached by the gas and, thus, no deposition is made on this surface area. By covering only a very small portion of surface area, almost all the surface area, i.e., the surface area of the front side and of the back side, can be coated with a coating.
The coating can be SiNx AlOx, SiOx and/or SiOxNy. The tray 10 is also adapted for holding and transporting the wafers held in the tray pockets 20, 21, 22 through a chamber of a coating device, in particular a PECVD chamber.
The protrusion 40, 41, 42, 43 has a trapezoidal shape or form. Other shapes or forms, e.g., square, rectangle or triangle, are possible. The protrusion 40, 41, 42, 43 has a front surface 45 which is perpendicular to the upper side of the tray 10. The front surface 45 of the protrusion 40, 41, 42, 43 is perpendicular to the upper side of the protrusion 40, 41, 42, 43 which comes in direct contact with the wafer, in particular with the back side of the wafer. Immediately adjacent to the front surface 45 are two side surfaces 46. The two side surfaces 46 are provided at opposite edges of the front surface 45. The angle between each of the side surfaces 46 and the front surface 45 is ca. 45°. The upper part 50 of the protrusion 40, 41, 42, 43 which is closer to the wafer than the lower part 51 of the protrusion 40, 41, 42,43 when the wafer is held in the recess 18 comprises two end surfaces 47, 47', immediately adjacent to the side surfaces 46. The end surfaces 47, 47' of the upper part 50 of the protrusion 40, 41,42, 43 transform/merge smoothly into the inner rim 17 of the tray pocket 20, 21, 22.
The lower part 51 of the protrusion 40, 41,42, 43 comprises intermediate surfaces 48 between the side surfaces 46 and the end surfaces 47, 47'. The intermediate surfaces 48 have an angle of about 90° to the front surface 45. The end surfaces 47, 47' of the lower part 51 of the protrusion 40, 41, 42,43 transform/merge smoothly into the step-like part of the back side 15 of the tray pocket 20, 21, 22.
The upper part 50 of the protrusion 40,41,42, 43 as well as the lower part 51 of the protrusion 40, 41, 42, 43 is symmetrical to a plane which runs perpendicularly to the upper side/front side 13 of the tray 10 and perpendicularly to the elongated cavity 19 on the back side 15 of the tray pocket 20, 21, 22. The tray pocket 20, 21, 22 and the protrusions 40, 41, 42, 43 are symmetric to an axis which is perpendicular to the drawing plane of Fig. 1 and runs through the centre of the recess 18.
The front surface 45 has a width of ca. 1.5 mm. The sum of the widths of the front surface 45, the intermediate surfaces 46 and the two end surfaces 50 of the upper part of the protrusion 40, 41, 42,43 is ca. 3 mm. The lower part of the protrusion 40,
41,42, 43 has an equal width as or a larger width than the upper part of the protrusion 40,41,42, 43.
The lower part 51 of the protrusion 40, 41,42, 43 extends from the lower side of the tray 10 up to the upper end of the elongated cavity 19. The upper part 50 of the protrusion 40, 41, 42, 43 extends from the elongated cavity 19 and above.
A cavity is provided close to some of the corner protrusions 30, 31, 32, 33.
A lower side of each of the protrusions 40,41, 42, 43 and/or a lower side of each of the corner protrusions 30, 31, 32, 33 which is opposite to an upper side of the protrusions 40, 41, 42, 43 or the corner protrusions 30, 31, 32, 33 for contacting and supporting the back side of the wafer, respectively, can be flush with a lower surface of the tray. This act as a kind of reinforcement of the protrusions 40, 41,42, 43 and/or corner protrusions 30, 31, 32, 33 at the back side of the tray 10.
Fig. 8 shows a detailed view of the leftmost and topmost tray pocket of Fig. 1. The upper side of the two leftmost corner protrusions 30, 33 of the tray pockets 20, 21, 22 in the leftmost column in Fig. 1 and the upper side of the rightmost corner protrusions 30, 31, 32, 33 of the tray pockets 20, 21, 22 in the rightmost column in Fig. 1 are flush, i.e., level, with the front side/upper side of the tray 10. Also, the leftmost protrusion 40 of the tray pockets 20, 21, 22 in the leftmost column in Fig. 1 and the rightmost protrusion 40, 41,42, 43 of the tray pockets 20, 21, 22 in the rightmost column are flush, i.e., level, with the front side/upper side of the tray 10. The tray has a sloped upper side or upper surface, so that the wafer in that recess 18, i.e., in that tray pocket 20, 21, 22, is in contact with all protrusions 40, 41, 42, 43 and all corner protrusions 30, 31, 32, 33.
The upper side of the other corner protrusions 30, 31, 32, 33 and the other protrusions 40, 41, 42,43 are not flush, i.e., level, with the upper side of the tray 10,
i.e., they lie ca. 0.8 mm below the upper side of the tray 10. The upper side is also called the front side.
The distance between two adjacent corner protrusions 30, 31, 32, 33 is about 148 mm. The distance between two protrusions 40,41, 42, 43 of the same orientated side, e.g., the left side of the square, of two immediately adjacent tray pockets 20, 21, 22 is ca. 166 mm. The corner protrusions have a larger radius in their lower part than in their upper part.
Some of the tray pockets 20, 21, 22 have a cavity immediately adjacent to the corner protrusion 30, 31, 32, 33.
Fig. 9 shows a schematic cross-section of an embodiment of a tray 10 according to the invention. Only the cross-section of a part of the tray 10 is shown in Fig. 9. The side cover 70, the corner protrusions 30, 31, 32, 33 and the protrusions 40, 41, 42,43 are drawn over each other to show the different sizes. However, Fig. 9 is not drawn to scale. The protrusions 40, 41, 42, 43 and/or the corner protrusions 30, 31, 32, 33 have an inclined surface, wherein the inclined surface faces the inner rim 17 of the tray pocket 20, 21, 22. The protrusions 40, 41, 42, 43 and/or the corner protrusions 30, 31, 32, 33 can have a horizontal contact area 99, 99' at the far side of the inclined surface, wherein the contact area 99 is for contacting the back side of the wafer 75. The inclined surface projects ca. 2 mm from the inner rim 17. The contact area 99, 99' has a width (measured perpendicularly to the inner rim 17) of ca. 1 mm. The length of the protrusion 40, 41, 42, 43 (measured parallel to the inner rim 17) can be ca. 4 mm. The contact area 99, 99' has a length of ca. 3 mm, wherein two inclined surfaces of a length of ca. 0. 5 mm each are directly adjacent to it. The corner protrusions 30, 31,
32, 33 have a quarter-circular form with a radius of ca. 5 mm.
Thus, no or almost no part of the outer rim of the wafer can be in contact with the protrusions 40, 41, 42, 43 and/or the corner protrusions 30, 31, 32, 33. Less than 1% of the outer edge of the back side of the wafer 75 can be in contact with protrusions 40,
41,42, 43 and/or corner protrusions 30, 31, 32, 33.
The corner protrusions 30, 31, 32, 33 can have an inclined surface such that the part of the corner protrusions 30, 31, 32, 33 farthest away from the inner rim 17 of the tray pocket 20, 21, 22 comprises a contact area 99' for contacting the back side of the wafer 75, while the rest of each of the corner protrusions 30, 31, 32, 33 is not in contact with the back side of the wafer 75.
Furthermore, a side cover 70 in the form of a projection running along all of the inner rim 17 of the tray pocket 20, 21, 22 can be provided. This projection/side cover 70 has a width of ca. 0.5 mm projecting from the inner rim 17. This projection prevents gas from reaching the other surface of the wafer 75, i.e., when the back side of the wafer 75 is coated with a CVD or a PECVD, gas is prevented from reaching the front side (and vice versa). Thus, no deposition occurs on the respective other side of the wafer 75. The side cover has a height (running in Fig. 9 from bottom to top) which is less than the height of the protrusions 40, 41, 42, 43 and/or corner protrusions 30, 31, 32,
33.
Only a fraction/part of the wafer 75 is shown in Fig. 9. The wafer 75 extends further to the right of Fig. 9.
Finally, it should be noted that terms such as comprising do not exclude other elements or steps and the a or an does not exclude a plurality. Also elements described in association with different embodiments may be combined. It should also be noted that reference signs in the claims should not be construed as limiting the scope of the claims.
LIST OF REFERENCE SIGNS tray front side of the tray back side of the tray inner rim of the tray pocket recess of the tray pocket elongated cavity of the back side of the tray 20, 21, 22 tray pocket
30, 31, 32, 33 corner protrusion
40,41, 42, 43 protrusion front surface of the protrusion side surface of the protrusion
47,47' end surfaces of the protrusion intermediate surface of the protrusion upper part of the protrusion lower part of the protrusion
60, 60' side pin side cover wafer
99, 99' contact area
Claims (14)
1. Tray (10) for holding at least one wafer, wherein the tray (10) comprises at least one tray pocket (20, 21, 22) with a 5 recess (18) for receiving and holding the wafer such that a front side of the wafer and a back side of the wafer can be coated, in particular with a gas state to a solid state deposition, wherein the tray pocket (20, 21, 22) comprises protrusions (40, 41, 42, 43) extending 10 from an inner rim (17) of the tray pocket (20, 21, 22), the protrusions (40,41, 42, 43) being configured for supporting the back side of the wafer, in particular an outer edge of the back side of the wafer, such that the back side of the wafer being held in the recess (18) is supported by the tray (10) such that only a minor part, in particular less than 25%, preferably less than
15 8%, more preferably less than 2%, of the outer edge of the back side of the wafer is supported by the tray (10).
2. Tray (10) according to claim 1, wherein the protrusions (40, 41, 42,43) are configured for supporting the back 20 side of the wafer such that the back side of the wafer being held in the recess (18) is supported by the tray (10) such that less than 2%, preferably less than 1%, more preferably less than 0.5%, of a surface area of the back side of the wafer is supported by the tray (10).
3. Tray (10) according to claim 1 or 2, wherein the recess (18) of the at least one tray pocket (20, 21, 22) has a rectangular form, in particular a square form.
4. Tray (10) according to one of the preceding claims, wherein the protrusions (40,41, 42, 43) of the tray pocket (20, 21, 22) are each 5 disposed at a centre of inner sides of the tray pocket (20, 21, 22).
5. Tray (10) according to one of the preceding claims, wherein the tray pocket (20, 21, 22) comprises corner protrusions (30, 31, 32, 33) in the corners of the recess (18), the corner protrusions (30, 31, 32, 33) being
10 configured for supporting the back side of the wafer, in particular an outer edge of the back side of the wafer.
6. Tray (10) according to one of the preceding claims, wherein the tray pocket (20, 21, 22) comprises at least two protrusions (40, 41,
15 42, 43), in particular at least three protrusions (40, 41, 42, 43), preferably at least four protrusions (40, 41, 42, 43).
7. Tray (10) according to one of the preceding claims, wherein the at least two protrusions (40, 41, 42, 43), in particular the at least 20 three protrusions (40, 41, 42, 43), preferably the at least four protrusions (40, 41,
42, 43), of the tray pocket (20, 21, 22) are arranged equidistantly along the inner rim (17) of the tray pocket (20, 21, 22).
8. Tray (10) according to one of the preceding claims,
25 wherein lower sides of the protrusions (40, 41,42, 43) which are opposite to upper sides of the protrusions (40, 41, 42,43), respectively, the upper sides of the protrusions (40,41,42, 43) being configured for contacting and supporting the back side of the wafer, and/or lower sides of the corner protrusions (30, 31, 32, 33) which are opposite to
5 upper sides of the corner protrusions (30, 31, 32, 33), respectively, the upper sides of the corner protrusions (30, 31, 32, 33) being configured for contacting and supporting the back side of the wafer, are flush with a lower surface of the tray (10).
10 9. Tray (10) according to one of the preceding claims, wherein the tray pocket (20, 21, 22) is symmetrical to an axis which extends perpendicularly to a front side (13) of the tray (10) and through the centre of the recess (18) of the tray pocket (20, 21, 22).
15 10. Tray (10) according to one of the preceding claims, wherein the protrusions (40, 41,42, 43) have a trapezoidal shape.
11. Tray (10) according to one of the preceding claims, wherein the protrusions (40, 41, 42, 43) have a width along the inner rim (17) of
20 the tray pocket (20, 21, 22) of less than 10%, in particular less than 5%, preferably less than 2%, of a width of the inner rim (17) from which the protrusions (40,41, 42, 43) extend.
12. Tray (10) according to one of the preceding claims,
25 wherein the protrusions (40, 41, 42, 43) have a width along the inner rim (17) of the tray pocket (20, 21, 22) of less than 10 mm, in particular less than 5 mm, preferably less than 2 mm.
13. Tray (10) according to one of the preceding claims, wherein the protrusions (40,41, 42, 43) have a length perpendicular to the 5 inner rim (17) of the tray pocket (20, 21, 22) of less than 10 mm, in particular less than 5 mm, preferably less than 2 mm.
14. Tray (10) according to one of the preceding claims, wherein the tray pocket (20, 21, 22) comprises at least one protrusion (40, 41 10 42, 43) at each of opposing inner sides of the tray pocket (20, 21, 22).
15. Coating device for depositing a coating on each of opposing surfaces of a wafer, the coating device comprising a coating chamber, and
15 a tray (10) according to one of the preceding claims arranged within the coating chamber.
Intellectual
Property
Office
Application No: GB1615589.7 Examiner: Dr Thomas Martin
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1615589.7A GB2553792A (en) | 2016-09-14 | 2016-09-14 | Tray for holding at least one wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1615589.7A GB2553792A (en) | 2016-09-14 | 2016-09-14 | Tray for holding at least one wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB201615589D0 GB201615589D0 (en) | 2016-10-26 |
| GB2553792A true GB2553792A (en) | 2018-03-21 |
Family
ID=57234625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1615589.7A Withdrawn GB2553792A (en) | 2016-09-14 | 2016-09-14 | Tray for holding at least one wafer |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2553792A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110223950B (en) * | 2019-07-11 | 2024-05-14 | 通威太阳能（成都）有限公司 | Tray structure for chemical vapor deposition silicon-based film passivation layer and manufacturing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02264449A (en) * | 1989-04-05 | 1990-10-29 | Mitsubishi Electric Corp | Substrate holder |
| US6217663B1 (en) * | 1996-06-21 | 2001-04-17 | Kokusai Electric Co., Ltd. | Substrate processing apparatus and substrate processing method |
| US6462411B1 (en) * | 1997-12-05 | 2002-10-08 | Kokusai Electric Co., Ltd | Semiconductor wafer processing apparatus for transferring a wafer mount |
| JP2005129575A (en) * | 2003-10-21 | 2005-05-19 | Hitachi Kokusai Electric Inc | Substrate treatment equipment and manufacturing method for semiconductor device |
| US7048488B1 (en) * | 1999-05-07 | 2006-05-23 | Asm International N.V. | Apparatus for transferring wafer and ring |
| WO2010127038A2 (en) * | 2009-04-29 | 2010-11-04 | Applied Materials, Inc. | End effector for handling substrates |
| CN202796885U (en) * | 2012-07-05 | 2013-03-13 | 中节能太阳能科技有限公司 | Silicon wafer bearing device used for film coating of crystalline silicon solar cell |
| WO2014123310A1 (en) * | 2013-02-06 | 2014-08-14 | Ap Systems Inc. | Substrate support and substrate treating apparatus having the same |
-
2016
- 2016-09-14 GB GB1615589.7A patent/GB2553792A/en not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02264449A (en) * | 1989-04-05 | 1990-10-29 | Mitsubishi Electric Corp | Substrate holder |
| US6217663B1 (en) * | 1996-06-21 | 2001-04-17 | Kokusai Electric Co., Ltd. | Substrate processing apparatus and substrate processing method |
| US6462411B1 (en) * | 1997-12-05 | 2002-10-08 | Kokusai Electric Co., Ltd | Semiconductor wafer processing apparatus for transferring a wafer mount |
| US7048488B1 (en) * | 1999-05-07 | 2006-05-23 | Asm International N.V. | Apparatus for transferring wafer and ring |
| JP2005129575A (en) * | 2003-10-21 | 2005-05-19 | Hitachi Kokusai Electric Inc | Substrate treatment equipment and manufacturing method for semiconductor device |
| WO2010127038A2 (en) * | 2009-04-29 | 2010-11-04 | Applied Materials, Inc. | End effector for handling substrates |
| CN202796885U (en) * | 2012-07-05 | 2013-03-13 | 中节能太阳能科技有限公司 | Silicon wafer bearing device used for film coating of crystalline silicon solar cell |
| WO2014123310A1 (en) * | 2013-02-06 | 2014-08-14 | Ap Systems Inc. | Substrate support and substrate treating apparatus having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201615589D0 (en) | 2016-10-26 |
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| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |