JPH02264449A - Substrate holder - Google Patents
Substrate holderInfo
- Publication number
- JPH02264449A JPH02264449A JP1085973A JP8597389A JPH02264449A JP H02264449 A JPH02264449 A JP H02264449A JP 1085973 A JP1085973 A JP 1085973A JP 8597389 A JP8597389 A JP 8597389A JP H02264449 A JPH02264449 A JP H02264449A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas discharge
- semiconductor substrate
- plasma
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 230000002093 peripheral effect Effects 0.000 claims abstract 3
- 239000004065 semiconductor Substances 0.000 abstract description 30
- 210000000078 claw Anatomy 0.000 description 10
- 230000005684 electric field Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241001446467 Mama Species 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、例えばプラズマによって薄膜形成やエツチン
グ等の処理を半導体基板に施す際に使用して好適な基板
ホルダーに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a substrate holder suitable for use when a semiconductor substrate is subjected to processing such as thin film formation or etching using plasma, for example.
一般に、この種の基板ホルダーとしては、種々色々なも
のが知られており、この中には従来より第３図（ａｌお
よび（ｂ）に示すようなものがある。これを同図に基づ
いて説明すると、同図において、符号１で示すものは気
体放電によって発生するプラズマ２中に晒される半導体
基板３を保持する保持体である。この保持体１には、半
導体基板３を収納する収納孔４およびこの収納孔４内に
半導体基板３を保持する４個の爪部５が設けられている
。Generally, various kinds of substrate holders are known as this type of substrate holder, and among these, there is a conventional one as shown in FIG. To explain, in the same figure, the reference numeral 1 is a holder that holds a semiconductor substrate 3 that is exposed to plasma 2 generated by gas discharge. 4 and four claw portions 5 for holding the semiconductor substrate 3 in the storage hole 4 are provided.
このように構成された基板ホルダーによって半導体基板
３を保持するには、保持体１の収納孔４内に半導体基板
３を挿入することにより行う。このとき、収納孔４内の
半導体基板３は端縁が爪部５によって抜は止めされる。The semiconductor substrate 3 is held by the substrate holder configured in this way by inserting the semiconductor substrate 3 into the storage hole 4 of the holder 1. At this time, the edge of the semiconductor substrate 3 in the storage hole 4 is prevented from being pulled out by the claw portion 5.
このようにして保持体１によって保持された半導体基板
３の主面（被処理面） ３ａに対し、気体放電によって
プラズマ２を発生させ、このプラズマ２中に発生する化
学活性種によって加工を施すことができる。Plasma 2 is generated by gas discharge on the main surface (surface to be processed) 3a of the semiconductor substrate 3 held by the holder 1 in this manner, and processing is performed using chemically active species generated in the plasma 2. I can do it.
ところで、この種の基板ホルダーにおいては、半導体基
板３を収納孔４内に位置付けるものであるため、半導体
基板３の主面３ａと保持板１ａとの間に段差が生じ、加
工時に半導体基板３の端縁付近では加工時に電界が歪ん
でいた。この結果、気体放電によって生じるプラズマ２
が不均一になり、半導体基板３の主面３ａでの加工特性
にばらつきが発生するという問題があった。By the way, in this type of substrate holder, since the semiconductor substrate 3 is positioned in the storage hole 4, a step is created between the main surface 3a of the semiconductor substrate 3 and the holding plate 1a, which causes the semiconductor substrate 3 to be damaged during processing. Near the edges, the electric field was distorted during processing. As a result, the plasma 2 generated by the gas discharge
There is a problem in that the processing characteristics become non-uniform and variations occur in the processing characteristics on the main surface 3a of the semiconductor substrate 3.
本発明はこのような事情に鑑みてなされたもので、加工
時に気体放電によって生じるプラズマが均一になり、半
導体基板に対する加工特性のばらつき発生を防止するこ
とができる基板ホルダーを提供するものである。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a substrate holder that can uniformize the plasma generated by gas discharge during processing and prevent variations in the processing characteristics of semiconductor substrates.
本発明に係る基板ホルダーは、気体放電中に晒される基
板を保持する保持体からなり、この保持体に基板を収納
する収納孔を設けると共に、この収納孔の一側開口周縁
と基板の主面とを同一の面上に位置付ける保持部を設け
たものである。The substrate holder according to the present invention consists of a holder that holds a substrate exposed to gas discharge, and this holder is provided with a storage hole for storing the substrate, and the holder is provided with a storage hole for storing the substrate, and the periphery of the opening on one side of the storage hole and the main surface of the substrate. A holding section is provided for positioning the two on the same surface.
本発明においては、収納孔の一側開口周縁と基板の主面
とを同一の面上に位置付けたことから、加工時に基板の
端縁付近での電界の歪みを低減させることができる。In the present invention, since the periphery of one side opening of the storage hole and the main surface of the substrate are positioned on the same plane, distortion of the electric field near the edge of the substrate during processing can be reduced.
以下、本発明の構成等を図に示す実施例によって詳細に
説明する。EMBODIMENT OF THE INVENTION Hereinafter, the structure etc. of this invention will be explained in detail by the Example shown in the figure.
第１図（ａ）および（ｂ）は本発明に係る基板ホルダー
を示す斜視図とそのｂ−ｂ線断面図である。同図におい
て、符号１１で示すものは気体放電中によって発生する
プラズマ１２中に晒される半導体基板１３を保持する保
持体で、反応容器（図示せず）内に設けられている。こ
の保持体１１には、例えば平面視矩形状の半導体基板１
３を収納する収納孔１４およびこの収納孔１４の一側開
口周縁（基準面）と半導体基板１３の主面１３ａとを同
一の面上に位置付ける４個の保持部としての爪部１５が
一体に設けられている。このうち爪部１５は、前記保持
体１１のプラズマ発生側に向かって突出する逆円錐台形
状に形成され、かつ外形寸法が半導体基板１３の外形寸
法と比較して十分に小さい寸法に設定されている。FIGS. 1(a) and 1(b) are a perspective view and a sectional view taken along line bb--b of the substrate holder according to the present invention. In the figure, the reference numeral 11 denotes a holder for holding a semiconductor substrate 13 exposed to plasma 12 generated during gas discharge, and is provided in a reaction vessel (not shown). This holder 11 includes, for example, a semiconductor substrate 1 having a rectangular shape in plan view.
The storage hole 14 for storing the storage hole 14 and the four claw portions 15 as holding portions that position the one side opening periphery (reference surface) of the storage hole 14 and the main surface 13a of the semiconductor substrate 13 on the same surface are integrated. It is provided. Among these, the claw portion 15 is formed in an inverted truncated cone shape protruding toward the plasma generation side of the holder 11, and has an external dimension set to be sufficiently smaller than the external dimension of the semiconductor substrate 13. There is.
このように構成された基板ホルダーを用いて半導基板１
３に加工を施すには、これを保持体１１の爪部１５に保
持し、次に気体放電によってプラズマ１２を発生させ、
このプラズマＩ２中に発生する化学活性種によって半導
体基板１３の主面１３ａに対して加工を施すことができ
る。この場合、収納孔１４の一側開口周縁と半導体基板
１３の主面１３ａとを同一の面上に位置付けたことから
、加工時に半導体基板１３の端縁付近での電界の歪みを
低減させることができる。ここで、本実施例においては
、爪部１５の外形寸法を半導体基板１３の外形寸法と比
較して十分に小さい寸法に設定し、かつテーパ状に形成
したから、爪部１５付近の電界の乱れがきわめて小さく
なる。Using the substrate holder configured in this way, the semiconductor substrate 1
3, it is held in the claw portion 15 of the holder 11, and then plasma 12 is generated by gas discharge.
The main surface 13a of the semiconductor substrate 13 can be processed by chemically active species generated in the plasma I2. In this case, since the one-side opening periphery of the storage hole 14 and the main surface 13a of the semiconductor substrate 13 are positioned on the same plane, it is possible to reduce distortion of the electric field near the edge of the semiconductor substrate 13 during processing. can. Here, in this embodiment, since the outer dimensions of the claw portion 15 are set to be sufficiently smaller than the outer dimensions of the semiconductor substrate 13 and are formed in a tapered shape, the electric field near the claw portion 15 is disturbed. becomes extremely small.
なお、本実施例においては、プラズマ１２が半導体基板
１３の下方で発生する場合に使用するものを示したが、
本発明はこれに限定されるものではなく、半導体基板１
３の上方で発生する場合には第２図に示すように半導体
基板１３を収納する収納孔２１およびこの孔２１内の半
導体基板１３を保持する保持部２２を有する保持体２３
としても実施例と同様に使用することができる。Note that in this embodiment, the plasma used when the plasma 12 is generated below the semiconductor substrate 13 is shown.
The present invention is not limited to this, and the semiconductor substrate 1
3, as shown in FIG.
It can also be used in the same way as in the embodiment.
また、本実施例においては、保持体１１に爪部１５を一
体に設ける構造としたが、本発明は着脱可能な構造とし
ても何等差し支えない。Further, in this embodiment, the structure is such that the claw portion 15 is integrally provided on the holder 11, but the present invention may have a detachable structure.
さらに、本実施例においては、プラズマによって薄膜形
成やエツチング等の処理を半導体基板に施す半導体製造
装置に適用する例を示したが、本発明は例えば合成ダイ
ヤモンドや超伝導体等の材料を加工する装置にも適用可
能である。Furthermore, in this embodiment, an example was shown in which the present invention is applied to a semiconductor manufacturing device that performs processing such as thin film formation and etching on a semiconductor substrate using plasma. It is also applicable to devices.
この他、本発明における半導体基板１３の形状。In addition, the shape of the semiconductor substrate 13 in the present invention.
材質や爪部１５の形状１個数、設定位置等は、前述した
実施例に限定されるものでないことは勿論である。Of course, the material, shape, number of claws 15, setting positions, etc. are not limited to those of the embodiments described above.
以上説明したように本発明によれば、気体放電中に晒さ
れる基板を保持する保持体からなり、この保持体に基板
を収納する収納孔を設けると共に、この収納孔の一側開
口周縁と基板の主面とを同一の面上に位置付ける保持部
を設けたので、収納孔の一側開口周縁と基板の主面とを
同一の面上に位置付けたことから、加工時に基板の端縁
付近での電界の歪みを低減させることができる。したが
って、気体放電によって生じるプラズマが均一になるか
ら、半導体基板に対する加工特性のばらつき発生を防止
することができる。As explained above, according to the present invention, the holder includes a holder that holds the substrate exposed during gas discharge, and the holder is provided with a storage hole for accommodating the substrate. Since the holder is provided to position the main surface of the board on the same surface, the periphery of the opening on one side of the storage hole and the main surface of the board are located on the same surface. The distortion of the electric field can be reduced. Therefore, since the plasma generated by the gas discharge becomes uniform, it is possible to prevent variations in the processing characteristics of the semiconductor substrate.
第１図（ａ）および（ｂ）は本発明に係る基板ホルダー
を示す斜視図とそのｂ−ｂ線断面図、第２図は他の実施
例を示す断面図、第３図（ａ）および山）は従来の基板
ホルダーを示す斜視図とそのｂ−ｂ線断面図である。
１１・・・・保持体、１２・・・・プラズマ、１３・・
・・半導体基板、１３ａ ・・・・主面、１４・・・
・収納孔、１５・・・・爪部。
代 理 人 大 岩 増 雄
第
図
１１：未肴本
１２；プラス゛マ
１３：千４４木坂
１３ｑ１シω
１４：枳ぜＩル
１５：入（ｐFIGS. 1(a) and (b) are a perspective view and a cross-sectional view taken along the line b-b of the substrate holder according to the present invention, FIG. 2 is a cross-sectional view showing another embodiment, and FIGS. 3(a) and 3) is a perspective view and a sectional view taken along line bb of the conventional substrate holder. 11...Holding body, 12...Plasma, 13...
...Semiconductor substrate, 13a ...Main surface, 14...
・Storage hole, 15...Claw part. Representative Masuo Daiiwa Diagram 11: Uneaten copy 12; Plus mama 13: 144 Kisaka 13q1 ω 14: Assembled Ile 15: Enter (p
Claims (1)
この保持体に基板を収納する収納孔を設けると共に、こ
の収納孔の一側開口周縁と基板の主面とを同一の面上に
位置付ける保持部を設けたことを特徴とする基板ホルダ
ー。It consists of a holder that holds the substrate exposed during the gas discharge,
A substrate holder characterized in that the holder is provided with a storage hole for storing the substrate, and a holding portion is provided for positioning the peripheral edge of one side opening of the storage hole and the main surface of the substrate on the same plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1085973A JPH02264449A (en) | 1989-04-05 | 1989-04-05 | Substrate holder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1085973A JPH02264449A (en) | 1989-04-05 | 1989-04-05 | Substrate holder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02264449A true JPH02264449A (en) | 1990-10-29 |
Family
ID=13873666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1085973A Pending JPH02264449A (en) | 1989-04-05 | 1989-04-05 | Substrate holder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02264449A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2553792A (en) * | 2016-09-14 | 2018-03-21 | Rec Solar Pte Ltd | Tray for holding at least one wafer |
-
1989
- 1989-04-05 JP JP1085973A patent/JPH02264449A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2553792A (en) * | 2016-09-14 | 2018-03-21 | Rec Solar Pte Ltd | Tray for holding at least one wafer |
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