CN210506518U - Carrier for growing two-dimensional film by CVD method - Google Patents

Abstract

The utility model provides a carrier for growing two-dimensional film by using CVD method, which is applied to a CVD device, and comprises a base, a bottom plate and a plurality of growth plates. The base is provided with a first limiting structure; the bottom plate is arranged on the base, the lower surface of the bottom plate is provided with a second limiting structure matched with the first limiting structure, and the upper surface of the bottom plate is provided with a third limiting structure; the base is provided with an arched support leg, so that the conveying is facilitated; the plurality of growth plates are used for bearing a plurality of growth substrates, are stacked and are arranged on the upper surface of the bottom plate; the lower surface of the growth plate positioned at the lowest part in the plurality of growth plates is provided with a fourth limit structure matched with the third limit structure; and a fifth limiting structure and a sixth limiting structure which are matched with each other are respectively arranged on two opposite surfaces of two adjacent growth plates. The utility model discloses a carrier is mutually supported with the help of first to sixth limit structure for firm in connection is difficult for taking place dislocation or slope, and has the part few, easily dismantles the advantage of assembly.

Description

Carrier for growing two-dimensional film by CVD method

Technical Field

The utility model discloses relate to two-dimensional film material preparation field on the whole, particularly, relate to a carrier that utilizes CVD method to grow two-dimensional film.

Background

Two-dimensional thin film materials, such as graphene, hexagonal boron nitride, etc., have excellent electronic and optoelectronic properties, and are receiving wide attention from the academic and industrial fields. The high-quality two-dimensional thin film material is mostly prepared by a chemical vapor Deposition (CVD for short) method, which mainly includes the processes of cracking of a precursor at a high temperature, nucleating on a growth substrate, growing and splicing to form a continuous thin film. During large-scale preparation, the placement of the growth substrate and the design of air flow are crucial to the quality of the prepared material, and the design of the growth carrier is not separated.

Some carriers capable of mass-producing thin films have been disclosed in the prior art, but there are still many problems in practical applications, for example, the number of components of the carrier is large, which makes the assembly and disassembly complicated; between a plurality of growth plates in the carrier to and the growth plate is connected firmly inadequately with the base, easily appear the dislocation even the problem of slope when leading to carrying the carrier.

The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not constitute prior art that is already known to a person of ordinary skill in the art.

SUMMERY OF THE UTILITY MODEL

A primary object of the present invention is to overcome at least one of the above-mentioned drawbacks of the prior art, and to provide a carrier for growing two-dimensional thin films by using a CVD method, so as to solve the problems of the prior art that the disassembly and assembly are complicated and the occurrence of dislocation or even inclination is easy.

In order to realize the purpose of the utility model, the utility model adopts the following technical scheme:

according to an aspect of the present invention, there is provided a carrier for growing a two-dimensional thin film by a CVD method, which is applied to a CVD apparatus, the carrier comprising a base, a bottom plate and a plurality of growth plates. The base is provided with a first limiting structure; the bottom plate is arranged on the base, the lower surface of the bottom plate is provided with a second limiting structure matched with the first limiting structure, and the upper surface of the bottom plate is provided with a third limiting structure; the plurality of growth plates are used for bearing a plurality of growth substrates, are stacked and are arranged on the upper surface of the bottom plate; the lower surface of the growth plate positioned at the lowest part in the plurality of growth plates is provided with a fourth limiting structure matched with the third limiting structure; and two opposite surfaces of two adjacent growth plates are respectively provided with a fifth limiting structure and a sixth limiting structure which are matched with each other.

According to the utility model discloses an embodiment, the upper surface of base still stands out all around and is equipped with the spacing portion of a plurality of detachable, the bottom plate is with a plurality of the growth plate is located a plurality of in the space that spacing portion demarcated, highly being greater than of spacing portion the bottom plate is with a plurality of height after the growth plate piles up.

According to an embodiment of the present invention, the limiting portion is a cylinder.

According to the utility model discloses an embodiment, the base includes: two first beams, at least two support legs and two second beams. The two first beams are oppositely arranged; two of the at least two support legs are respectively connected to two ends of the two first beams; the two oppositely arranged second beams are connected to the two first beams and positioned between the two support legs; the second beam and the support leg which are positioned at the same end jointly define a through groove, and the through groove is the first limiting structure; wherein the upper surfaces of the two first beams, the upper surfaces of the at least two legs, and the upper surfaces of the two second beams are flush with each other to form a contact surface for contacting the lower surface of the floor.

According to an embodiment of the present invention, the at least two support legs comprise three support legs, wherein one support leg is located between two support legs;

the support leg is in an arch shape, the arch shape comprises an inner surface and two side surfaces, each side surface and the inner surface form an angle, and the angle is between 90 and 135 degrees.

According to the utility model discloses an embodiment, the lower surface of bottom plate the second limit structure includes two first archs the lower surface of bottom plate laminate in when the contact surface, two first arch inserts two respectively lead to the groove, first bellied height is between 5mm ~ 100 mm.

According to an embodiment of the present invention, the third limiting structure of the upper surface of the bottom plate includes a plurality of second protrusions, and the plurality of second protrusions are arranged along a circumference of the upper surface of the bottom plate; a plurality of in the growth plate with the bottom plate contact the fourth limit structure of the lower surface of growth plate include a plurality of with protruding complex a plurality of recesses of second, the protruding height of second is 1mm ~ 100 mm.

According to an embodiment of the present invention, two opposite surfaces of the growth plate are respectively provided with a plurality of mutually-matched third protrusions and second grooves.

According to the utility model discloses an embodiment, it is a plurality of first recess and a plurality of the closed angle department of second recess is equipped with the circular arc breach.

According to an embodiment of the present invention, the base, the bottom plate and the growth plate are made of any one of quartz, graphite, silicon carbide, graphite with a silicon carbide coating layer or graphite with a tantalum carbide coating layer; or the like, or, alternatively,

the distance between two opposite surfaces of two adjacent growth plates is 0.2 mm-15 mm; or the like, or, alternatively,

the width of the base is 5 mm-50 mm.

According to the above technical scheme, the utility model discloses an utilize CVD method to grow carrier of two-dimensional film's advantage and positive effect lie in:

the utility model discloses embodiment's carrier, when using, from bottom to top assembles base, bottom plate and a plurality of growth plates that pile up according to the preface, wherein realize spacingly through the first limit structure of complex and second limit structure between base and the bottom plate, realizes spacingly through complex third limit structure and fourth limit structure between bottom plate and the growth plate of below, realizes spacingly through complex fifth limit structure and sixth limit structure between a plurality of growth plates, according to this, the utility model discloses a carrier assembly is accomplished the back, and firm in connection is difficult for taking place dislocation or slope. Additionally, the utility model discloses a carrier still has the part few, easily dismantles the advantage of assembly.

Drawings

The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.

Fig. 1 is a front view of a carrier for growing a two-dimensional thin film using a CVD method according to an exemplary embodiment.

Fig. 2 is a side view of a carrier for growing a two-dimensional thin film using a CVD method according to an exemplary embodiment.

FIG. 3 is a top view of a base plate shown disposed on a base, according to an exemplary embodiment.

Fig. 4 is a schematic diagram illustrating a carrier disposed within a quartz tube according to an exemplary embodiment.

FIG. 5 is a perspective view of a base shown in accordance with an exemplary embodiment.

FIG. 6 is a top view of a base plate shown according to an exemplary embodiment.

Fig. 7 is a bottom view of a base plate according to an exemplary embodiment.

FIG. 8 is a top view of a growth plate shown according to an exemplary embodiment.

FIG. 9 is a bottom view of a growth plate shown according to an exemplary embodiment.

Wherein the reference numerals are as follows:

10. base seat

110. First beam

120. Second beam

130. Supporting leg

131. Inner surface

132. Side surface

140. Through groove

20. Base plate

210. First bump

220. Second projection

30. Growth plate

310. Third bump

320. The first groove

321. Arc notch

40. Limiting part

50. Quartz tube

Detailed Description

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.

Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". The terms "a," "an," "the," and "said" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first," "second," "third," and "fourth," etc. are used merely as labels, and are not limiting as to the number of their objects.

Referring to fig. 1, a carrier for growing a two-dimensional thin film by CVD method, which embodies the principles of the present invention, is representatively illustrated in fig. 1. In the exemplary embodiment, the carrier for growing a two-dimensional thin film by using a CVD method provided by the present invention is illustrated by taking a graphene thin film as an example. It will be appreciated by those skilled in the art that other two-dimensional thin film materials may be grown and that various modifications, additions, substitutions, deletions, or other changes may be made to the embodiments described below while remaining within the scope of the present invention.

An embodiment of the utility model provides an utilize CVD method to grow carrier of two-dimensional film is applied to a CVD equipment, particularly, the utility model discloses a carrier can be placed in the quartz capsule in CVD equipment.

The carrier comprises a base, a bottom plate and a plurality of growth plates. The base is provided with a first limiting structure; the bottom plate is arranged on the base, the lower surface of the bottom plate is provided with a second limiting structure matched with the first limiting structure, and the upper surface of the bottom plate is provided with a third limiting structure; the plurality of growth plates are used for bearing a plurality of growth substrates, are stacked and are arranged on the upper surface of the bottom plate; the lower surface of the growth plate, which is in contact with the bottom plate, in the plurality of growth plates is provided with a fourth limit structure matched with the third limit structure; and a fifth limiting structure and a sixth limiting structure which are matched with each other are respectively arranged on two opposite surfaces of two adjacent growth plates.

The utility model discloses embodiment's carrier, when using, from bottom to top assembles base, bottom plate and a plurality of growth plates that pile up according to the preface, wherein realize spacingly through the first limit structure of complex and second limit structure between base and the bottom plate, realizes spacingly through complex third limit structure and fourth limit structure between bottom plate and the growth plate of below, realizes spacingly through complex fifth limit structure and sixth limit structure between a plurality of growth plates, according to this, the utility model discloses a carrier assembly is accomplished the back, and firm in connection is difficult for taking place dislocation or slope. Additionally, the utility model discloses a carrier still has the part few, easily dismantles the advantage of assembly.

The structure, connection mode and functional relationship of the main components of the carrier for growing a two-dimensional thin film by CVD according to the present invention will be described in detail with reference to the accompanying drawings.

Fig. 1 is a front view of a carrier for growing a two-dimensional thin film using a CVD method according to an exemplary embodiment. Fig. 2 is a side view of a carrier for growing a two-dimensional thin film using a CVD method according to an exemplary embodiment. FIG. 3 is a top view of a base plate shown disposed on a base, according to an exemplary embodiment. Fig. 4 is a schematic diagram illustrating a carrier disposed within a quartz tube according to an exemplary embodiment. FIG. 5 is a perspective view of a base shown in accordance with an exemplary embodiment. FIG. 6 is a top view of a base plate shown according to an exemplary embodiment. Fig. 7 is a bottom view of a base plate according to an exemplary embodiment. FIG. 8 is a top view of a growth plate shown according to an exemplary embodiment. FIG. 9 is a bottom view of a growth plate shown according to an exemplary embodiment.

As shown in fig. 1 and 2, one embodiment of the present invention provides a carrier for growing a two-dimensional thin film by a CVD method, the carrier comprising a base 10, a bottom plate 20, and a plurality of growth plates 30. The base 10 is provided with a first limiting structure; the bottom plate 20 is arranged on the base 10, the lower surface of the bottom plate 20 is provided with a second limiting structure matched with the first limiting structure, and the upper surface of the bottom plate 20 is provided with a third limiting structure; the plurality of growth plates 30 are used for bearing a plurality of growth substrates, and the plurality of growth plates 30 are stacked and arranged on the upper surface of the bottom plate 20; the lower surface of the growth plate 30, which is in contact with the bottom plate 20, of the plurality of growth plates 30 has a fourth limit structure cooperating with the third limit structure; and a fifth limiting structure and a sixth limiting structure which are matched with each other are respectively arranged on two opposite surfaces of two adjacent growth plates 30.

As shown in fig. 2 and 3, a plurality of detachable limiting portions 40 are further protruded from the periphery of the upper surface of the base 10, the bottom plate 20 and the plurality of growth plates 30 are located in a space defined by the plurality of limiting portions 40, and the height of the plurality of limiting portions 40 is greater than the height of the stacked bottom plate 20 and the plurality of growth plates 30.

In the present embodiment, when the spacing structure between the bottom plate 20 and the growth plate 30 located at the lowermost position and/or the spacing structure between two adjacent growth plates 30 fails, the plurality of spacing portions 40 may additionally space the plurality of growth plates 30 in real time, further enhancing the stability between the components.

In some embodiments, the stop 40 may be cylindrical and may be rectangular or circular in cross-section. Of course, in other embodiments, the limiting portion 40 may have other shapes, and the present invention is not limited thereto.

As shown in fig. 5, in an exemplary embodiment, the base 10 includes two first beams 110, two second beams 120, and three legs 130.

The two first beams 110 are oppositely arranged, the two second beams 120 are oppositely arranged, the two support legs 130 are respectively connected to two ends of the two first beams 110, and the two second beams 120 are connected to the two first beams 110 and located between the two support legs 130. Wherein, the second beam 120 and the support leg 130 at the same end define a through groove 140, and the through groove 140 is a first limiting structure; wherein the upper surfaces of the two first beams 110, the upper surfaces of the at least two legs 130, and the upper surfaces of the two second beams 120 are flush with each other to form a contact surface for contacting the lower surface of the floor 20.

Of course, in other embodiments, the first limiting structure of the base 10 may also adopt other structures, for example, the first limiting structure includes a protrusion, a groove, and the like.

As shown in fig. 1 and 5, three legs 130 are sequentially spaced along the length direction of the first beam 110, wherein one leg 130 is located between the other two legs 130, so as to increase the connection stability between the base 10 and the quartz tube 50. Further, the leg 130 is in an arch shape, the arch shape includes an inner surface 131 and two side surfaces 132, and each side surface 132 is at an angle of 90-135 degrees, preferably 95-110 degrees, with the inner surface 131.

In the present embodiment, the arch structure of the legs 130 is designed to make the contact between the supporting member and the base 10 more stable when the operator uses the supporting member to carry the carrier, and at the same time, the angles between the two side surfaces 132 and the inner surface 131 are designed to make the supporting member more easily inserted into the base 10.

In some embodiments, the distance between the outermost peripheries of the two oppositely disposed first beams 110 is between 5mm and 50mm, in other words, the width of the base 10 is between 5mm and 50 mm.

As shown in fig. 1 and 4, fig. 4 shows a schematic view of the carrier placed inside a quartz tube 50. In the present embodiment, the portion of the base 10 contacting the quartz tube 50 is designed to be arc-shaped, and the radian of the arc is matched with the radian of the inner surface 131 of the quartz tube 50, so that the carrier is not easy to move in the quartz tube 50, and the carrier can be horizontally placed.

As shown in fig. 7, in some embodiments, the second limiting structure of the lower surface of the bottom plate 20 includes two first protrusions 210, and when the lower surface of the bottom plate 20 is attached to the upper surface of the base 10, the two first protrusions 210 can be respectively inserted into the two through grooves 140 to limit the position between the bottom plate 20 and the base 10, wherein the height of the first protrusions 210 is between 5mm and 100 mm.

As shown in fig. 6, in some embodiments, the third limiting structure of the upper surface of the bottom plate 20 comprises a plurality of second protrusions 220, the plurality of second protrusions 220 being arranged along the periphery of the upper surface of the bottom plate 20; as shown in fig. 9, the fourth position-limiting structure of the lower surface of the lowermost growth plate 30 of the plurality of growth plates 30 includes a plurality of first grooves 320 engaged with the second protrusions 220, wherein the height of the second protrusions 220 is 1mm to 100 mm.

The second protrusions 220 collectively define a space in which a growth substrate for growing the graphene thin film can be placed. Meanwhile, the plurality of second protrusions 220 not only cooperate with the first grooves 320 to prevent the dislocation of the growth plate 30 above, but also restrict the movement of the growth substrate because the plurality of second protrusions 220 protrude from the upper surface of the growth plate 30.

For example, the plurality of second protrusions 220 may enclose a rectangle, and accordingly, the growth substrate is also rectangular in shape, and the size of the growth substrate is slightly smaller than the size of the rectangle enclosed by the plurality of second protrusions 220, so that the boundary of the growth substrate does not exceed the range defined by the plurality of second protrusions 220.

As shown in fig. 8 and 9, in some embodiments, two opposing surfaces of two adjacent growth plates 30 are provided with a plurality of third protrusions 310 and second grooves, respectively, that cooperate with each other. Specifically, the upper surface of each growth plate 30 is provided with a plurality of third protrusions 310, the lower surface of each growth plate 30 is provided with a plurality of second grooves, and the plurality of growth plates 30 are limited by the cooperation of the protrusions and the grooves.

A plurality of growth plates 30 are stacked on the base plate 20, and a distance between adjacent two growth plates 30 is determined by a height of the third protrusion 310 and a depth of the second groove, and preferably, a distance between two opposite surfaces of adjacent two growth plates 30 is 0.2mm to 15 mm.

In some embodiments, the heights of the third protrusions 310 formed on the upper surfaces of the plurality of growth plates 30 may be different, thereby enabling the growth of the graphene thin film under different gas flow conditions.

In some embodiments, the cross-sectional shape of the third protrusion 310 on the upper surface of the growth plate 30 may be rectangular, although other shapes are possible.

As shown in fig. 9, in some embodiments, the sharp corners of the first and second grooves 320 and 321 are provided with rounded notches. The design of circular arc breach 321 for it is more smooth and easy when the dismouting that arch and recess prevent to take place to interfere the card dead at the closed angle department. Meanwhile, the design of the arc notch 321 facilitates the processing technology of the groove.

In some embodiments, the base plate 10, the bottom plate 20, and the growth plate 30 are made of any one of quartz, graphite, silicon carbide, graphite with a silicon carbide coating, or graphite with a tantalum carbide coating.

It should be noted that the first, second, third, fourth, fifth and sixth limiting structures may also be other structures, for example, a groove is formed on the upper surface of the growth plate 30, and a protrusion matched with the groove is formed on the lower surface of the growth plate 30; alternatively, the upper and lower surfaces of the growth plate 30 may be provided with other structures that can act as a stop.

To sum up, the utility model discloses embodiment's carrier, when using, from bottom to top assembles base 10, bottom plate 20 and a plurality of growth plate 30 that pile up according to the preface, wherein realize spacingly through first limit structure of complex and second limit structure between base 10 and the bottom plate 20, realizes spacingly through complex third limit structure and fourth limit structure between bottom plate 20 and the growth plate 30 of below, realizes spacingly through complex fifth limit structure and sixth limit structure between a plurality of growth plate 30, according to this, the utility model discloses a carrier assembly accomplishes the back, firm in connection is difficult for taking place dislocation or slope. Additionally, the utility model discloses a carrier still has the part few, easily dismantles the advantage of assembly.

It should be noted here that the carrier for growing a two-dimensional thin film by CVD method shown in the drawings and described in the present specification is only one example of applying the principles of the present invention. It should be clearly understood by those skilled in the art that the principles of the present invention are not limited to any of the details or any of the components of the apparatus shown in the drawings or described in the specification.

It is to be understood that the invention is not limited in its application to the details of construction and the arrangement of components set forth in the description. The present invention is capable of other embodiments and of being practiced and carried out in a variety of ways. The foregoing variations and modifications fall within the scope of the present invention. It will be understood that the invention disclosed and defined in this specification extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute various alternative aspects of the present invention. The embodiments set forth herein explain the best modes known for practicing the invention and will enable others skilled in the art to utilize the invention.

Claims (10)

1. A carrier for growing two-dimensional films by a CVD method is applied to a CVD device, and is characterized by comprising:

the base is provided with a first limiting structure;

the bottom plate is arranged on the base, the lower surface of the bottom plate is provided with a second limiting structure matched with the first limiting structure, and the upper surface of the bottom plate is provided with a third limiting structure; and

the growth plates are used for bearing a plurality of growth substrates, are stacked and are arranged on the upper surface of the bottom plate; the lower surface of the growth plate positioned at the lowest part in the plurality of growth plates is provided with a fourth limiting structure matched with the third limiting structure; and two opposite surfaces of two adjacent growth plates are respectively provided with a fifth limiting structure and a sixth limiting structure which are matched with each other.

2. The carrier of claim 1, wherein a plurality of removable limiting portions protrude from the periphery of the upper surface of the base, the bottom plate and the plurality of growth plates are located in a space defined by the plurality of limiting portions, and the height of the limiting portions is greater than the height of the stacked bottom plate and the plurality of growth plates.

3. The carrier for growing two-dimensional thin films by CVD method according to claim 2, wherein the position-limiting portion is a cylinder.

4. The carrier for growing two-dimensional thin films by CVD method according to claim 1, wherein the base comprises:

two first beams arranged oppositely;

at least two support legs, wherein two of the at least two support legs are respectively connected to two ends of the two first beams; and

the two second beams are oppositely arranged and connected with the two first beams and positioned between the two support legs;

the second beam and the support leg which are positioned at the same end jointly define a through groove, and the through groove is the first limiting structure;

wherein the upper surfaces of the two first beams, the upper surfaces of the at least two legs, and the upper surfaces of the two second beams are flush with each other to form a contact surface for contacting the lower surface of the floor.

5. The carrier for growing two-dimensional thin films by using CVD method according to claim 4, wherein said at least two legs includes three of said legs, one of said legs being located between two of said legs;

the support leg is in an arch shape, the arch shape comprises an inner surface and two side surfaces, each side surface and the inner surface form an angle, and the angle is between 90 and 135 degrees.

6. The carrier of claim 4, wherein the second limiting structure of the bottom plate comprises two first protrusions, the two first protrusions are respectively inserted into the two through grooves when the bottom surface of the bottom plate is attached to the contact surface, and the height of the first protrusions is 5mm to 100 mm.

7. The carrier for growing two-dimensional thin films by using CVD method according to claim 1, wherein the third stopper structure of the upper surface of the base plate includes a plurality of second protrusions arranged along a periphery of the upper surface of the base plate; a plurality of in the growth plate with the bottom plate contact the fourth limit structure of the lower surface of growth plate include a plurality of with protruding complex a plurality of recesses of second, the protruding height of second is 1mm ~ 100 mm.

8. The carrier for growing two-dimensional thin films by CVD method according to claim 7, wherein a plurality of third protrusions and second grooves are formed on two opposite surfaces of two adjacent growth plates respectively.

9. The carrier of claim 8, wherein the first and second grooves have arc notches at their sharp corners.

10. The carrier for growing two-dimensional films by using the CVD method according to claim 1, wherein the base, the bottom plate and the growth plate are made of any one of quartz, graphite, silicon carbide, graphite with a silicon carbide coating layer or graphite with a tantalum carbide coating layer; or the like, or, alternatively,

the distance between two opposite surfaces of two adjacent growth plates is 0.2 mm-15 mm; or the like, or, alternatively,

the width of the base is 5 mm-50 mm.

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