WO2010087638A2 - Appareil de traitement de substrat de type discontinu - Google Patents

Appareil de traitement de substrat de type discontinu Download PDF

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Publication number
WO2010087638A2
WO2010087638A2 PCT/KR2010/000540 KR2010000540W WO2010087638A2 WO 2010087638 A2 WO2010087638 A2 WO 2010087638A2 KR 2010000540 W KR2010000540 W KR 2010000540W WO 2010087638 A2 WO2010087638 A2 WO 2010087638A2
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WO
WIPO (PCT)
Prior art keywords
gas
pipe
gas supply
injection
substrate
Prior art date
Application number
PCT/KR2010/000540
Other languages
English (en)
Korean (ko)
Other versions
WO2010087638A3 (fr
Inventor
허관선
위광희
조재현
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090007371A external-priority patent/KR101016065B1/ko
Priority claimed from KR1020090035447A external-priority patent/KR101039153B1/ko
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to JP2011547797A priority Critical patent/JP5602157B2/ja
Priority to CN2010800061503A priority patent/CN102301461A/zh
Publication of WO2010087638A2 publication Critical patent/WO2010087638A2/fr
Publication of WO2010087638A3 publication Critical patent/WO2010087638A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

  • the present invention relates to a batch substrate processing apparatus. More specifically, a plurality of substrates can be simultaneously processed and substrate processing is performed on substrates in which a gas supply pipe and a gas exhaust pipe for supplying and discharging gas for atmosphere formation are disposed opposite to the inside of the chamber and loaded in the chamber. It is related with the batch type substrate processing apparatus which can supply a gas uniformly.
  • the vapor deposition apparatus is an apparatus for forming a transparent conductive layer, an insulating layer, a metal layer, or a silicon layer constituting a flat panel display.
  • the heat treatment apparatus is an apparatus for performing heat treatment in order to crystallize and phase change the layers constituting the flat panel display.
  • a typical heat treatment apparatus is a silicon crystallization apparatus that crystallizes amorphous silicon deposited on a glass substrate with polysilicon in manufacturing a thin film transistor for a liquid crystal display. Recently, such a silicon crystallization apparatus has been widely used to form a polysilicon layer corresponding to a light absorption layer in manufacturing a thin film solar cell.
  • a substrate processing apparatus includes a sheet type that can perform heat treatment on one substrate and a batch type that can simultaneously perform substrate processing on a plurality of substrates.
  • substrates simultaneously has attracted much attention.
  • a batch substrate processing apparatus has recently become large enough to accommodate a plurality of large area substrates (eg, glass or quartz substrates).
  • the batch type substrate processing apparatus becomes large in area, it is very important to smoothly and uniformly supply the source gas or the atmosphere gas required for substrate processing in the substrate processing apparatus. That is, only when the source gas or the atmosphere gas is smoothly and uniformly supplied into the batch substrate processing apparatus, the characteristics of the film to be substrate-processed over the plurality of large area substrates can be kept uniform.
  • an object of the present invention is to solve the problems of the prior art as described above, by uniformly supplying the gas required for processing the substrate in the chamber so that the substrate can be uniformly processed for all substrates loaded in the chamber. It is an object to provide a batch substrate processing apparatus.
  • the present invention by uniformly supplying the gas required for substrate processing in the chamber, there is an effect that the substrate treatment is uniformly applied to all the substrates loaded in the chamber.
  • FIG. 2 is a perspective view showing an arrangement state of a substrate, a main heater unit, and an auxiliary heater unit of the batch heat treatment apparatus.
  • FIG 3 is a perspective view showing the configuration of a boat of a batch heat treatment apparatus.
  • FIG. 4 is a cross-sectional view taken along the line A-A of FIG.
  • FIG. 5 is a view showing a state in which a gas supply pipe and a gas exhaust pipe are arranged in a chamber.
  • FIG. 6 is a perspective view showing a state in which a gas supply pipe and a gas exhaust pipe are connected to a gas pipe base;
  • FIG. 7 is a view illustrating a gas diffusion plate installed inside the gas pipe base.
  • FIG. 8 is a perspective view illustrating a state in which a gas supply pipe is disposed in a chamber.
  • FIG. 9 is a sectional perspective view showing a state in which the gas supply pipe of FIG. 8 is connected to a gas pipe base.
  • FIG. 10 is a view showing a state in which gas supplied through a gas supply port is diffused in a main body.
  • FIG. 11 is a diagram illustrating a state in which gas supplied through a gas supply port is diffused through a gas diffusion plate installed inside the main body.
  • the front view which shows the structure of the gas supply line of a batch type substrate processing apparatus.
  • the perspective view which shows the structure of the gas supply line of a batch type substrate processing apparatus.
  • FIG. 14 is a view showing a state of use of a gas supply pipe of a batch substrate processing apparatus.
  • a batch substrate processing apparatus capable of simultaneously processing a plurality of substrates, comprising: a chamber for providing a substrate processing space for the plurality of substrates; A boat on which the plurality of substrates are loaded and supported; A plurality of heaters disposed at predetermined intervals along the stacking direction of the substrate; And a gas pipe base installed at an inner side of the chamber, wherein the gas pipe base is connected to a gas supply pipe and a gas exhaust pipe; Characterized in that it comprises a.
  • a batch type substrate processing apparatus capable of simultaneously processing a plurality of substrates, comprising: a chamber providing a substrate processing space for the plurality of substrates; A boat on which the plurality of substrates are loaded and supported; A plurality of heaters disposed at predetermined intervals along the stacking direction of the substrate; And a gas pipe base installed at both sides of the chamber, wherein the gas pipe base is connected to a gas supply pipe or a gas exhaust pipe; Characterized in that it comprises a.
  • the gas supply pipes and the gas exhaust pipes may be alternately connected.
  • a plurality of gas supply holes and gas exhaust holes may be formed in the gas supply pipe and the gas exhaust pipe, respectively.
  • the gas supply hole and the gas exhaust hole may be formed to face the inside of the chamber and to correspond to the substrate loaded in the boat.
  • the gas pipe base may include a main body having a space formed therein; A gas port connected to the main body; And a connection hole formed in the main body and connected to at least one of the gas supply pipe and the gas exhaust pipe.
  • the gas port may be any one of a gas supply port corresponding to the gas supply pipe and a gas exhaust port corresponding to the gas exhaust pipe.
  • the gas pipe base may further include a gas diffusion plate installed inside the main body.
  • a plurality of diffusion holes may be formed in the gas diffusion plate.
  • the gas supply pipe may include a plurality of gas injection pipes having a plurality of injection holes formed on a surface thereof, and the plurality of gas injection pipes may be disposed in parallel with the substrate.
  • the gas injection pipe may include a first gas injection pipe, a second gas injection pipe, and a third gas injection pipe.
  • the substrate treating gas supplied to the gas supply pipe may be firstly injected from the uppermost gas injection pipe of the plurality of gas injection pipes.
  • the diameter of the injection hole of the gas injection pipe of the plurality of gas injection pipes may be gradually increased along the traveling direction of the substrate processing gas in the gas supply pipe.
  • the diameter of the injection hole of the gas injection pipe of the plurality of gas injection pipes is the same, the diameter of the injection hole of the gas injection pipe of the arbitrary gas injection pipe of the gas injection pipe disposed above the any gas injection pipe It may be larger than the diameter of the injection hole.
  • the batch substrate processing apparatus includes a chamber in which a substrate processing space is provided, a boat supporting a loaded substrate, a heater for heating a substrate, and an atmosphere gas for supplying and exhausting an atmosphere gas for controlling the atmosphere of the substrate processing process. It may be configured to include a gas supply pipe and a gas exhaust pipe. Since a general configuration of such a batch substrate processing apparatus and a substrate processing process using the same are well known in the art, a detailed description thereof will be omitted.
  • FIG. 1 is a perspective view showing the configuration of a batch substrate processing apparatus 1.
  • the material of the substrate 10 loaded in the batch type substrate processing apparatus 1 is not particularly limited, and the substrate 10 of various materials such as glass, plastic, polymer, silicon wafer, stainless steel, and the like may be loaded.
  • the substrate 10 of various materials such as glass, plastic, polymer, silicon wafer, stainless steel, and the like may be loaded.
  • a description will be given assuming a rectangular glass substrate that is most commonly used in the field of flat panel displays such as LCDs and OLEDs or thin film silicon solar cells.
  • the batch substrate processing apparatus 1 includes a rectangular parallelepiped chamber 20 that provides a substrate processing space for the substrate 10 and a frame (not shown) that supports the chamber 20.
  • the material of the chamber 20 is preferably stainless steel, but is not necessarily limited thereto.
  • the first opening 22 is formed at one side of the chamber 20.
  • the substrate 10 may be loaded and unloaded using a substrate loading device (not shown) such as a transfer arm.
  • the first opening 22 may be provided with, for example, a door (not shown) that can be opened and closed in the vertical direction.
  • the second opening 24 may be formed in the upper portion of the chamber 20. As the second opening 24, repair and replacement of, for example, a boat, a gas supply pipe, and a gas exhaust pipe installed in the chamber 20 may be performed.
  • the second opening 24 may be provided with an openable cover (not shown).
  • a plurality of heaters 70 having a tubular shape for directly heating the substrate 10 with respect to each of the plurality of substrates 10 may be installed at regular intervals.
  • the heater 70 may be inserted and fixed through the holes 26 formed in plural along the outer wall of the chamber 20. The configuration of the heater 70 will be described later.
  • FIG. 2 is a perspective view showing an arrangement state of the substrate 10, the main heater unit 40, and the auxiliary heater unit 50 of the batch heat treatment apparatus 1.
  • the main heater unit 40 includes a plurality of unit main heaters 70 disposed at regular intervals in parallel with the short side direction of the substrate 10.
  • the unit main heater 70 is a rod-shaped heater having a conventional long length, and the heating element is inserted into the quartz tube and constitutes a main heater unit 40 that generates heat by receiving external power through terminals provided at both ends. It is a unit.
  • the main heater unit 40 includes 14 unit main heaters 70, but the number of unit main heaters 70 constituting the main heater unit 40 is loaded on the chamber 20. It may be variously changed according to the size of (10).
  • the plurality of main heater units 40 are disposed at regular intervals along the stacking direction of the substrate 10.
  • the substrate 10 is disposed between the plurality of main heater units 40.
  • three substrates 10 are arranged between four main heater units 40, but the number of main heater units 40 is the number of substrates 10 loaded in the chamber 20. It may vary depending on the number.
  • the substrate 10 is preferably disposed at the center between the main heater units 40.
  • the substrate 10 and the main heater unit 40 is spaced apart so as not to interfere with the behavior of the transfer arm (not shown) of the substrate transfer device when loading the substrate 10 in the chamber 20. desirable.
  • the batch type heat treatment apparatus 10 is provided with a main heater unit 40 composed of 14 unit main heaters 70 that can cover the entire area of the substrate 10 on the upper and lower portions of the substrate 10.
  • the substrate 10 may be uniformly applied with heat from the 28 unit main heaters 70 over the entire area, and thus the substrate 10 may be uniformly treated.
  • the auxiliary heater unit 50 includes a first auxiliary heater unit 50a disposed in parallel along the short side direction of the substrate 10 and a second auxiliary heater unit 50b disposed along the long side direction of the substrate 10. do.
  • the first auxiliary heater unit 50a includes a plurality of first unit auxiliary heaters 52a disposed at both sides of the main heater unit 40 in parallel with the unit main heater 70.
  • the first auxiliary heater unit 50a is composed of all eight first unit auxiliary heaters 52a disposed on both sides of the four main heater units 40, but the first auxiliary heater unit 50a is provided.
  • the number of the first unit auxiliary heaters 52a constituting the can be variously changed according to the number of main heater units 40 installed in the chamber 20.
  • the second auxiliary heater unit 50b includes a plurality of second unit auxiliary heaters 52b disposed vertically with the unit main heater 70 on both sides of the main heater unit 40.
  • the second auxiliary heater unit 50b is composed of ten second unit auxiliary heaters 52b which are disposed on both upper and lower sides of the four main heater units 40, but the second auxiliary heater
  • the number of second unit auxiliary heaters 52b constituting the unit 50b may be variously changed according to the number of main heater units 40 installed in the chamber 20.
  • the main heater unit 40 is preferably disposed at the center between the second auxiliary heater units 50b.
  • first unit auxiliary heater 52a and the second unit auxiliary heater 52b it is preferable to use a rod-shaped heater having the same general length as the unit main heater 70 as described above.
  • the batch type heat treatment apparatus 1 includes a first auxiliary heater unit 50a composed of eight first unit auxiliary heaters 52a and ten second unit auxiliary heaters at four outer circumferences of the main heater unit 40.
  • the second auxiliary heater unit 50b constituted by 52b
  • the four outer peripheral portions of the main heater unit 40 receive heat from 18 unit auxiliary heaters 52a and 52b so that the main heater unit 40 4
  • the outer circumference can prevent heat loss inside the chamber 20, which is inevitably generated by contacting the external environment.
  • FIG. 3 is a perspective view showing the configuration of the boat 30 of the batch heat treatment apparatus 1.
  • a plurality of boats 30 are installed in the chamber 20 to support the substrate 10 loaded into the chamber.
  • the boat 30 is preferably installed to support the long side of the substrate 10.
  • six boats 30 are provided on both sides of the board 10 in each of three long sides.
  • the boats 30 may be installed in a larger number than the boat 10 in order to stably support the board 10. It can be changed in various ways.
  • the material of the boat 30 is preferably quartz.
  • the substrate 10 is preferably loaded into the boat 30 to be seated on the holder 12.
  • the substrate treatment temperature reaches the softening temperature of the glass substrate during the substrate treatment process, the substrate warpage occurs due to the weight of the substrate itself. In particular, such a warpage problem becomes more problematic as the substrate becomes larger in area.
  • the substrate 10 is processed in a state in which the substrate 10 is seated on the holder 12.
  • FIG. 4 is a sectional perspective view taken along the line A-A of FIG.
  • one side of the chamber 20 is provided with a gas pipe base 300 to which a plurality of gas supply pipes 100 and a plurality of gas exhaust pipes 200 are connected.
  • a gas pipe base 300 to which a plurality of gas supply pipes 100 and a plurality of gas exhaust pipes 200 are connected.
  • the gas supply pipe 100 supplies a gas for forming a substrate processing atmosphere into the chamber 20 when the substrate processing is performed on the substrate 10.
  • the gas exhaust pipe 200 exhausts the waste gas used for the substrate treatment to the outside of the chamber 20.
  • the cross-sectional shape of the gas supply pipe 100 and the gas exhaust pipe 200 is not specifically limited, It is preferable to make it circular for convenience of manufacture.
  • the diameter of the gas exhaust pipe 200 is preferably larger than the diameter of the gas supply pipe 100.
  • the material of the gas supply pipe 100 and the gas exhaust pipe 200 may include quartz.
  • the gas supply pipe 100 and the gas exhaust pipe 200 are alternately arranged on the gas pipe base 300 to smoothly diffuse the gas in the chamber 20 and exhaust the gas from the chamber 20. It is preferable in terms of.
  • the gas pipe base 300 supports the gas supply pipe 100 and the gas exhaust pipe 200 while the gas supply pipe 100 and the gas exhaust pipe 200 are installed outside the chamber 20 and the gas supply part (not shown) and the gas exhaust part. It connects with each other (not shown).
  • FIG 5 is a view illustrating a state in which the gas supply pipe 100 and the gas exhaust pipe 200 are disposed in the chamber 20.
  • the gas pipe base 300 is provided on both sides of the chamber 20, and each gas pipe base 300 is provided with a gas supply pipe 100 and a gas exhaust pipe. 200 is connected.
  • four gas pipe bases 300 may be installed at two sides of the chamber 20, but the number of the gas pipe bases 300 may be the size of the chamber 20 and the ease of installation of the gas pipe base 300. It may be changed in various ways in consideration of the overall. If necessary, two gas pipe bases 300 may be installed on both sides of the chamber 20.
  • the gas supply pipe 100 and the gas exhaust pipe 200 are alternately connected to the gas pipe base 300.
  • the state of the gas supply pipe 100 and the gas exhaust pipe 200 which are alternately arranged in this way is also applied to the arrangement of the gas supply pipe 100 and the gas exhaust pipe 200 connected to the gas pipe base 300 facing each other. It is preferable. That is, as shown in FIG. 5, the arbitrary gas supply pipes 100 face each other with the gas exhaust pipe 200 with the substrate (not shown) interposed therebetween, and the optional gas exhaust pipe 200 with the substrate (not shown) interposed therebetween.
  • the arrangement of the gas supply pipe 100 and the gas exhaust pipe 200 may be set so as to face each other with the gas supply pipe 200.
  • three gas supply pipes 100 and two gas exhaust pipes 200 are connected to the gas pipe base 300 installed at one side of the chamber 20, and installed at the other side of the chamber 20.
  • Two gas supply pipes 100 and three gas exhaust pipes 200 may be connected to the gas pipe base 300, but the number of the gas supply pipes 100 and the gas exhaust pipes 200 connected to each gas pipe base 300 may include a chamber ( 20 may be variously changed in consideration of the size, ease of installation of the gas supply pipe 100 and the gas exhaust pipe 200, and the like.
  • the total number of the gas supply pipe 100 and the gas exhaust pipe 200 installed in the chamber 20 is preferably maintained in the same manner so as to smoothly diffuse and exhaust the gas.
  • a plurality of gas supply holes 110 through which gas flows is formed in the gas supply pipe 100, and a plurality of gas exhaust holes 210 through which gas is introduced into the gas exhaust pipe 200.
  • the gas supply hole 110 and the gas exhaust hole 210 are formed along the longitudinal direction of the gas supply pipe 100 and the gas exhaust pipe 200, respectively, and are formed toward the inner side of the chamber 20, that is, toward the substrate 10. It is desirable to be.
  • the number of the gas supply holes 110 and the gas exhaust holes 210 may be maintained at the same number as the number of substrates loaded in the chamber 20, but may be variously changed in consideration of smooth supply and exhaust of gas.
  • FIG. 6 is a perspective view illustrating a state in which the gas supply pipe 100 and the gas exhaust pipe 200 are connected to the gas pipe base 300.
  • the gas pipe base 300 may include a main body 310, a connection hole 320, and a gas port 330.
  • the main body 310 may be formed in a predetermined size and have a space formed therein to be used as a diffusion space of a gas supplied from the outside. According to the figure, the main body 310 is formed of a rectangular parallelepiped, but is not necessarily limited to the illustrated form.
  • the partition 312 may divide the inside of the body 310 into a plurality.
  • the partition wall 312 is formed between the connection hole 320 and the gas supply port 330a and the gas exhaust port 330b which will be described later, the gas supplied through the gas supply port 330a corresponds to the gas supply pipe
  • the gas may be introduced into the gas 100, and the gas introduced into the gas exhaust pipe 200 may be exhausted to the corresponding gas exhaust port 330b.
  • the interior of the main body 310 is divided into five by four partitions 312, but the number of partitions 312 may be increased or decreased depending on the number of gas supply pipes 100 and gas exhaust pipes 200. .
  • the formation of such a partition 312 can additionally obtain the effect of strengthening the durability of the main body 310, and further, the gas pipe base 300.
  • connection holes 320 are formed in the upper portion of the main body 310, and at least one of the gas supply pipe 100 and the gas exhaust pipe 200 is connected to each of the connection holes 320.
  • the diameters of the connection holes 320 may be different from each other.
  • a flange 322 may be further connected to the connection hole 320 to secure the connection of the gas supply pipe 100 or the gas exhaust pipe 200 connected to the connection hole 320.
  • the gas port 330 may include a gas supply port 330a for receiving gas from the outside and a gas exhaust port 330b for exhausting the waste gas to the outside.
  • the gas supply port 330a may be connected to at least one lower portion of the body 310.
  • the gas supply port 330a introduces a gas supplied from the outside into the gas pipe base 300.
  • the gas exhaust port 330b may be connected to at least one lower portion of the gas pipe base 300.
  • the gas exhaust port 330b exhausts the waste gas introduced through the gas exhaust pipe 200 to the outside of the chamber 20.
  • FIG. 7 is a diagram illustrating a gas diffusion plate 340 installed inside the gas pipe base 300.
  • the gas diffusion plate 340 is formed in a plate shape and installed horizontally inside the main body 310.
  • the gas diffusion plate 340 is provided with a plurality of diffusion holes 342 at regular intervals throughout.
  • the diameter of the diffusion hole 342 is preferably smaller than the diameter of the gas supply port 330a. The gas supplied from the outside diffuses through the diffusion hole 342 formed over the entire area of the gas diffusion plate 340.
  • FIGS. 8 and 9 The arrangement of the gas supply pipe 100 and the gas exhaust pipe 200 may be changed as shown in FIGS. 8 and 9.
  • 8 is a perspective view showing a state in which the gas supply pipe 100 is disposed in the chamber 20.
  • 9 is a cross-sectional perspective view illustrating a state in which the gas supply pipe 100 of FIG. 8 is connected to the gas pipe base 300.
  • the gas pipe base 300 is installed at both sides of the chamber 20, and is installed at one side of the chamber 20.
  • the gas supply pipe 100 is connected to the gas pipe base 300
  • the gas exhaust pipe 200 is connected to the gas pipe base 300 installed at the other side of the inside of the chamber 20.
  • FIGS. 8 and 9 illustrate only the gas pipe base 300 to which the gas supply pipe 100 of one side of the chamber 20 is connected for convenience.
  • the batch substrate processing apparatus 1 may operate as described below.
  • the heater 70 is operated to perform a substrate treatment process on the substrate 10.
  • an atmosphere gas such as, for example, nitrogen or argon is supplied through the gas supply port 330a to form the inside of the chamber 20 in a substrate processing atmosphere.
  • the gas supplied to the gas supply port 330a is supplied into the chamber 20 through the gas supply pipe 100 and the gas supply hole 110.
  • FIG. 10 is a diagram illustrating a state in which gas supplied through the gas supply port 330a is diffused in the main body 310.
  • the gas supplied from the outside through the gas supply port 330a is uniformly diffused into the body 310 and is supplied into the chamber 20 through the gas supply pipe 100.
  • FIG. 11 is a diagram illustrating a state in which gas supplied through the gas supply port 330a is diffused through the gas diffusion plate 340 installed inside the main body 310.
  • the gas supplied from the outside through the gas supply port 330a is uniformly diffused in the internal space of the main body 310 (lower space of the gas diffusion plate 340) and the gas diffusion plate 340 is diffused.
  • the gas supply pipe 100 moves through the hole 342 to the internal space of the main body 310 (upper space of the gas diffusion plate 340) and is uniformly diffused in the upper space of the gas diffusion plate 340. It is supplied through the chamber 20 through.
  • the waste gas used for the composition of the substrate processing atmosphere is the gas exhaust port 200 through the gas exhaust pipe 200 and the gas exhaust hole 210 that are alternately arranged or opposed to the gas supply pipe 100 is a gas exhaust port ( It is exhausted to the outside of the chamber 20 through 330b.
  • the gas diffusion plate 340 is installed inside the main body 310. After spreading more sufficiently in the double space derived accordingly] by the gas supply pipe 100 is supplied into the chamber 20 by the gas for processing the substrate is uniformly supplied into the chamber 20 loading in the chamber 20. There is an advantage that the substrate treatment can be made uniform for all the substrates 10.
  • the gas supply pipe 100 and the gas exhaust pipe 200 are alternately and / or opposed to each other in a state in which the substrate processing gas is supplied and exhausted so that the substrate processing gas pressure during the substrate processing process is the chamber 20.
  • the substrate treatment can be made uniform for all the substrates 10 loaded in the chamber 20 by being kept uniform throughout.
  • FIG. 12 is a front view which shows the structure of the gas supply line 400 of the batch type substrate processing apparatus 1.
  • FIG. 13 is a perspective view which shows the structure of the gas supply line 400 of the batch type substrate processing apparatus 1.
  • the gas supply pipe 400 includes a unit supply pipe 410, first, second and third injection pipes 420a, 420b, and 420c, and first, second and third injection holes ( 430a, 430b, and 430c and first and second connection pipes 440a and 440b.
  • the substrate processing gas is supplied from the outside through the unit supply pipe 410.
  • the unit supply pipe 410 is formed to have a predetermined length, is installed vertically inside the chamber, and one end of the unit supply pipe 410 is connected to an external gas supply device (not shown).
  • One end of the unit supply pipe 410 is formed to receive the substrate processing gas, and the other end of the unit supply pipe 410 is orthogonally connected to the first injection pipe 420a to be described later.
  • the first, second, and third injection pipes 420a, 420b, and 420c receive a substrate processing gas through the unit supply pipe 410, and then supply gas to the plurality of loaded substrates 10.
  • the first, second, and third injection pipes 420a, 420b, and 420c are disposed in order from the upper side to the lower side in the chamber.
  • the first, second, and third injection pipes 420a, 420b, and 420c are disposed in parallel to the long side direction of the substrate 10.
  • the gas supply pipe 400 is configured to include three injection pipes 420a, 420b, and 420c, but the number of the injection pipes may be variously changed.
  • the first injection pipe 420a is connected to the end of the unit supply pipe 410, and the second and third injection pipes 420b and 420c are connected to the first injection pipe by the first and second connection pipes 440a and 440b.
  • 420a is continuously connected.
  • one end of the first injection pipe 420a is connected to one end of the unit supply pipe 410, and the other end of the first injection pipe 420a is connected to the second injection pipe 440a by the first connection pipe 440a.
  • the first, second and third injection pipes (420a, 420b, 420c) and the first and second connection pipes (440a, 440b) are connected orthogonally to each other, as shown in the overall '5' shape Can have
  • both ends of the first and second injection pipe (420a, 420b) is open.
  • one end connected to the second connection pipe 440b of the third injection pipe 420c may be opened, and the other end of the third injection pipe 420c may be closed.
  • one end of the third injection pipe 420c may be closed using the cover 460.
  • the cover 460 may also be used when one end of the first connecting pipe 440a is closed.
  • a plurality of first, second and third injection holes 430a, 430b, and 430c may be formed on the surface of the first, second and third injection pipes 420a, 420b, and 420c toward the substrate 100.
  • the first, second and third injection holes 430a, 430b, and 430c may be formed in a straight line in the length direction of each of the injection pipes 420a, 420b, and 420c.
  • the diameters of the first, second, and third injection holes 430a, 430b, and 430c may be gradually increased along the traveling direction of the gas.
  • the connection between the first injection pipe 420a and the first connection pipe 440a is larger than the diameter of the first injection hole 430a formed at the connection portion between the unit supply pipe 410 and the first injection pipe 420a.
  • the diameter of the first injection hole 430a formed in the portion may be larger.
  • the diameters of the second and third injection holes 430b and 430c may be gradually increased along the advancing direction of the gas.
  • the diameters of the first, second, and third injection holes 430a, 430b, and 430c may increase in stages along the gas traveling direction.
  • the diameters of the injection holes 430a, 430b, and 430c are the same in each of the injection pipes 420a, 420b, and 420c, but the second injection holes 430b of the second injection pipe 420b are made of The diameter is larger than that of the first injection hole 430a of the first injection pipe 420a, and the third injection hole 430c of the third injection pipe 420c is the second injection hole of the second injection pipe 420b.
  • 430b) may be larger in diameter.
  • the diameter of the injection holes 430a, 430b, and 430c gradually or stepwise increases in the gas flow direction in the gas supply pipe 400 so that the gas supplied through the unit supply pipe 410 is supplied to the unit supply pipe 410. This is to prevent the pressure of the gas from decreasing and the amount of gas injected through the injection hole decreases away from the supply pipe.
  • the gas supply pipe 400 is preferably to be supported by installing the support (450).
  • the support 450 may be installed to be connected to the first connection pipe 440a while being parallel to the unit supply pipe 410. Specifically, the upper end of the support 450 is in contact with the first connection pipe 440a connecting the first injection pipe 420a and the second injection pipe 420b, the lower end of the support 450 is a gas pipe In contact with the base 300.
  • one end of the third injection pipe 420c may be in contact with one side of the support 450 to ensure structural stability of the gas supply pipe 400.
  • FIG. 14 is a figure which shows the use state of the gas supply line 400 of the batch type substrate processing apparatus 1.
  • FIG. 14 is a figure which shows the use state of the gas supply line 400 of the batch type substrate processing apparatus 1.
  • three gas supply pipes 400 may be installed in the long side of the substrate 10 in the chamber 20. This is a case where a plurality of gas supply pipes 400 are disposed so as to correspond to the size of the substrate 10 after reducing the overall size of the gas supply pipes 400.
  • the number of the gas supply pipe 400 is illustrated as three, but may be variously changed according to the size of the substrate 10 and the gas supply pipe 400.
  • Gas supplied from the outside of the chamber 20 to the gas supply pipe 400 flows into the unit supply pipe 410, and the introduced gas flows into the first injection pipe 420a connected to the unit supply pipe 410.
  • Gas is supplied to the substrate 10 through the first injection hole 430a of the first injection tube 420a.
  • Gas not injected from the first injection pipe 420a flows into the second injection pipe 420b through the first connection pipe 440a, and opens the second injection hole 430b formed in the second injection pipe 420b. It is supplied to the substrate 10 through.
  • Gas not injected from the second injection pipe 420b flows into the third injection pipe 420c through the second connection pipe 440b and opens the third injection hole 430c formed in the third injection pipe 420c. It is supplied to the substrate 10 through.
  • the diameters of the first, second, and third injection holes 430a, 430b, and 430c may be gradually or stepwise increased in the gas supply pipe 400 according to the traveling direction of the gas. .
  • the substrate treatment may be uniformly performed on all the substrates 10 loaded in the chamber 20 by uniformly supplying the substrate treatment gas into the chamber 20.
  • FIG. 15 is a figure which shows the use state of the gas supply line 400a of the batch type substrate processing apparatus 1.
  • FIG. 15 is a figure which shows the use state of the gas supply line 400a of the batch type substrate processing apparatus 1.
  • two gas supply pipes 400a may be installed in the long side of the substrate 10 in the chamber 20. This is a case where only one gas supply pipe 400 is disposed after the entire size of the gas supply pipe 400 can correspond to the size of the substrate 10. That is, in this use example, the lengths of the first, second and third injection pipes 420a, 420b, and 420c of the gas supply pipe 400a may be substantially the same as the long side length of the substrate 10. Since the structure of other gas supply pipe 400a is the same as that of the gas supply pipe 400 of a 1st use example, detailed description is abbreviate
  • FIG. 16 is a figure which shows the use state of the gas supply line 400 of the batch type substrate processing apparatus 1.
  • FIG. According to this use example, the gas supply pipe 400 of the first use example can be connected to the gas pipe base 300 described above. Since the configuration of the gas pipe base 300 and the connection method of the gas supply pipe 400 and the gas pipe base 300 are the same as described above, detailed description thereof will be omitted.
  • FIG. 17 is a figure which shows the use state of the gas supply line 400a of the batch type substrate processing apparatus 1.
  • FIG. 17 it is possible to connect the gas supply pipe 400a of the second use example to the gas pipe base 300 described above. Since the configuration of the gas pipe base 300 and the connection method of the gas supply pipe 400 and the gas pipe base 300 are the same as described above, detailed description thereof will be omitted.

Abstract

L'invention concerne un appareil de traitement de substrat de type discontinu, qui peut traiter simultanément une pluralité de substrats, et dans lequel un tuyau d'alimentation en gaz et un tuyau d'évacuation de gaz destinés à fournir et à évacuer un gaz pour créer une atmosphère pendant un traitement de substrat sont opposés l'un à l'autre dans une chambre et peuvent alimenter uniformément en gaz de processus de substrat, le substrat chargé dans la chambre. Selon l'invention, un appareil de traitement de substrat de type discontinu (1), qui peut traiter simultanément une pluralité de substrats, comprend : une chambre (20) destinée à offrir un espace de traitement de substrat à une pluralité de substrats (10); un élément formant nacelle (30) sur laquelle la pluralité de substrats (10) sont chargés et pris en charge ; une pluralité d'éléments de chauffage (70) agencés selon des intervalles prédéterminés le long de la direction de stratification du substrat ; et une base de tuyaux de gaz (300) disposée dans la chambre (20), le tuyau d'alimentation en gaz (100) et le tuyau d'évacuation de gaz (200) étant reliés à la base de tuyaux de gaz (300).
PCT/KR2010/000540 2009-01-30 2010-01-29 Appareil de traitement de substrat de type discontinu WO2010087638A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011547797A JP5602157B2 (ja) 2009-01-30 2010-01-29 バッチ式基板処理装置
CN2010800061503A CN102301461A (zh) 2009-01-30 2010-01-29 批处理式基板处理装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0007371 2009-01-30
KR1020090007371A KR101016065B1 (ko) 2009-01-30 2009-01-30 배치식 열처리 장치
KR10-2009-0035447 2009-04-23
KR1020090035447A KR101039153B1 (ko) 2009-04-23 2009-04-23 대면적 기판처리 시스템의 가스 인젝터

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WO2010087638A2 true WO2010087638A2 (fr) 2010-08-05
WO2010087638A3 WO2010087638A3 (fr) 2010-10-28

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CN (1) CN102301461A (fr)
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KR102106969B1 (ko) * 2013-02-26 2020-05-08 삼성디스플레이 주식회사 기판 열처리 장치 및 그 방법
KR101527158B1 (ko) * 2013-10-24 2015-06-09 주식회사 테라세미콘 배치식 기판처리 장치
KR101695948B1 (ko) * 2015-06-26 2017-01-13 주식회사 테라세미콘 기판처리 시스템

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WO2010087638A3 (fr) 2010-10-28
JP2012516564A (ja) 2012-07-19
CN102301461A (zh) 2011-12-28
JP5602157B2 (ja) 2014-10-08
TW201036090A (en) 2010-10-01

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