JP5602157B2 - バッチ式基板処理装置 - Google Patents

バッチ式基板処理装置 Download PDF

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Publication number
JP5602157B2
JP5602157B2 JP2011547797A JP2011547797A JP5602157B2 JP 5602157 B2 JP5602157 B2 JP 5602157B2 JP 2011547797 A JP2011547797 A JP 2011547797A JP 2011547797 A JP2011547797 A JP 2011547797A JP 5602157 B2 JP5602157 B2 JP 5602157B2
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JP
Japan
Prior art keywords
gas
pipe
substrate processing
chamber
gas supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011547797A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012516564A (ja
Inventor
ホ、カンソン
ウィ、グァンヒ
チョ、ジェヒョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tera Semicon Corp
Original Assignee
Tera Semicon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090007371A external-priority patent/KR101016065B1/ko
Priority claimed from KR1020090035447A external-priority patent/KR101039153B1/ko
Application filed by Tera Semicon Corp filed Critical Tera Semicon Corp
Publication of JP2012516564A publication Critical patent/JP2012516564A/ja
Application granted granted Critical
Publication of JP5602157B2 publication Critical patent/JP5602157B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2011547797A 2009-01-30 2010-01-29 バッチ式基板処理装置 Active JP5602157B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2009-0007371 2009-01-30
KR1020090007371A KR101016065B1 (ko) 2009-01-30 2009-01-30 배치식 열처리 장치
KR1020090035447A KR101039153B1 (ko) 2009-04-23 2009-04-23 대면적 기판처리 시스템의 가스 인젝터
KR10-2009-0035447 2009-04-23
PCT/KR2010/000540 WO2010087638A2 (fr) 2009-01-30 2010-01-29 Appareil de traitement de substrat de type discontinu

Publications (2)

Publication Number Publication Date
JP2012516564A JP2012516564A (ja) 2012-07-19
JP5602157B2 true JP5602157B2 (ja) 2014-10-08

Family

ID=42396195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011547797A Active JP5602157B2 (ja) 2009-01-30 2010-01-29 バッチ式基板処理装置

Country Status (4)

Country Link
JP (1) JP5602157B2 (fr)
CN (1) CN102301461A (fr)
TW (1) TW201036090A (fr)
WO (1) WO2010087638A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102106969B1 (ko) * 2013-02-26 2020-05-08 삼성디스플레이 주식회사 기판 열처리 장치 및 그 방법
KR101527158B1 (ko) * 2013-10-24 2015-06-09 주식회사 테라세미콘 배치식 기판처리 장치
KR101695948B1 (ko) * 2015-06-26 2017-01-13 주식회사 테라세미콘 기판처리 시스템

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021116A (ja) * 1988-03-09 1990-01-05 Tel Sagami Ltd 熱処理装置
JPH03255618A (ja) * 1990-03-05 1991-11-14 Fujitsu Ltd 縦型ｃｖｄ装置
JPH05335247A (ja) * 1992-05-27 1993-12-17 Nec Kansai Ltd 半導体製造装置
JP3844274B2 (ja) * 1998-06-25 2006-11-08 独立行政法人産業技術総合研究所 プラズマｃｖｄ装置及びプラズマｃｖｄ方法
TWI232509B (en) * 2001-07-25 2005-05-11 Tokyo Electron Ltd Processing apparatus and processing method
KR101022662B1 (ko) * 2003-08-05 2011-03-22 주성엔지니어링(주) 균일한 막 증착을 위한 챔버 및 샤워 헤드
JP2004179672A (ja) * 2003-12-12 2004-06-24 Hitachi Kokusai Electric Inc 基板加熱装置及び半導体回路の形成方法
US20050287806A1 (en) * 2004-06-24 2005-12-29 Hiroyuki Matsuura Vertical CVD apparatus and CVD method using the same
KR100779118B1 (ko) * 2005-12-09 2007-11-27 주식회사 테라세미콘 평판표시장치 제조시스템
JP4994724B2 (ja) * 2006-07-07 2012-08-08 株式会社東芝 成膜装置及び成膜方法
JP2008034463A (ja) * 2006-07-26 2008-02-14 Hitachi Kokusai Electric Inc 基板処理装置
KR100833712B1 (ko) * 2007-02-28 2008-05-29 주식회사 테라세미콘 대면적 기판 처리 시스템의 가스 공급 장치

Also Published As

Publication number Publication date
WO2010087638A2 (fr) 2010-08-05
CN102301461A (zh) 2011-12-28
JP2012516564A (ja) 2012-07-19
TW201036090A (en) 2010-10-01
WO2010087638A3 (fr) 2010-10-28

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