KR101130037B1 - 보트 - Google Patents
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- Publication number
- KR101130037B1 KR101130037B1 KR1020090066722A KR20090066722A KR101130037B1 KR 101130037 B1 KR101130037 B1 KR 101130037B1 KR 1020090066722 A KR1020090066722 A KR 1020090066722A KR 20090066722 A KR20090066722 A KR 20090066722A KR 101130037 B1 KR101130037 B1 KR 101130037B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- boat
- main body
- substrate processing
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 125
- 239000007789 gas Substances 0.000 claims description 144
- 238000000034 method Methods 0.000 claims description 6
- 239000002912 waste gas Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- -1 that is Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D85/00—Containers, packaging elements or packages, specially adapted for particular articles or materials
- B65D85/30—Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure
- B65D85/48—Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure for glass sheets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
Claims (6)
- 삭제
- 하부 프레임, 상기 하부 프레임의 상측에 위치된 상부 프레임, 상기 하부 프레임과 상기 상부 프레임을 연결하는 복수의 수직 프레임, 상기 수직 프레임에 형성되어 기판을 각각 지지하는 복수의 지지 로드를 각각 가지면서 상호 대칭을 이루는 제1 메인 바디부 및 제2 메인 바디부를 포함하는 보트로서,상기 제1 메인 바디부의 상기 수직 프레임의 내부에는 가스의 유입을 안내하는 제1 가스 라인이 형성되고, 상기 제1 메인 바디부의 상기 지지 로드와 상기 지지 로드 사이의 상기 수직 프레임 부위에는 상기 제1 가스 라인과 연통되어 가스를 상기 기판으로 분사하는 제1 가스 홀이 형성되며,상기 제2 메인 바디부의 상기 수직 프레임의 내부에는 가스의 배출을 안내하는 제2 가스 라인이 형성되고, 상기 제2 메인 바디부의 상기 지지 로드와 상기 지지 로드 사이의 상기 수직 프레임 부위에는 상기 제1 가스 홀과 대응되게 형성되어 상기 기판의 처리에 사용된 폐가스를 흡입하여 상기 제2 가스 라인으로 전달하는 제2 가스 홀이 형성되며,가스는 상기 제1 메인 바디부의 상기 수직 프레임의 하측에서 상측을 향하여 상기 제1 가스 라인으로 공급되고,상기 제1 및 제2 가스 홀의 직경은, 상기 제1 및 제2 메인 바디부의 상기 수직 프레임을 기준으로, 하측에서 상측으로 갈수록 점점 크게 형성된 것을 특징으로 하는 보트.
- 삭제
- 삭제
- 삭제
- 제2항에 있어서,상기 제1 가스 홀의 직경 보다, 상기 제1 가스 홀과 각각 대응하는, 각각의 상기 제2 가스 홀의 직경이 큰 것을 특징으로 하는 보트.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090066722A KR101130037B1 (ko) | 2009-07-22 | 2009-07-22 | 보트 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090066722A KR101130037B1 (ko) | 2009-07-22 | 2009-07-22 | 보트 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110009359A KR20110009359A (ko) | 2011-01-28 |
KR101130037B1 true KR101130037B1 (ko) | 2012-03-23 |
Family
ID=43615056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090066722A KR101130037B1 (ko) | 2009-07-22 | 2009-07-22 | 보트 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101130037B1 (ko) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010001419A (ko) * | 1999-06-04 | 2001-01-05 | 윤종용 | 반도체소자 제조용 보트 및 이를 구비한 공정튜브 |
JP2004095575A (ja) * | 2002-08-29 | 2004-03-25 | Toshiba Corp | 減圧化学気相成長装置 |
JP2004319695A (ja) * | 2003-04-15 | 2004-11-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
KR20090076451A (ko) * | 2008-01-09 | 2009-07-13 | 삼성전자주식회사 | 반도체 제조설비 그의 웨이퍼 로딩/언로딩 방법 |
-
2009
- 2009-07-22 KR KR1020090066722A patent/KR101130037B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010001419A (ko) * | 1999-06-04 | 2001-01-05 | 윤종용 | 반도체소자 제조용 보트 및 이를 구비한 공정튜브 |
JP2004095575A (ja) * | 2002-08-29 | 2004-03-25 | Toshiba Corp | 減圧化学気相成長装置 |
JP2004319695A (ja) * | 2003-04-15 | 2004-11-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
KR20090076451A (ko) * | 2008-01-09 | 2009-07-13 | 삼성전자주식회사 | 반도체 제조설비 그의 웨이퍼 로딩/언로딩 방법 |
Also Published As
Publication number | Publication date |
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KR20110009359A (ko) | 2011-01-28 |
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