WO2010087638A3 - Appareil de traitement de substrat de type discontinu - Google Patents

Appareil de traitement de substrat de type discontinu Download PDF

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Publication number
WO2010087638A3
WO2010087638A3 PCT/KR2010/000540 KR2010000540W WO2010087638A3 WO 2010087638 A3 WO2010087638 A3 WO 2010087638A3 KR 2010000540 W KR2010000540 W KR 2010000540W WO 2010087638 A3 WO2010087638 A3 WO 2010087638A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
substrate
substrates
chamber
batch
Prior art date
Application number
PCT/KR2010/000540
Other languages
English (en)
Korean (ko)
Other versions
WO2010087638A2 (fr
Inventor
허관선
위광희
조재현
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090007371A external-priority patent/KR101016065B1/ko
Priority claimed from KR1020090035447A external-priority patent/KR101039153B1/ko
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to JP2011547797A priority Critical patent/JP5602157B2/ja
Priority to CN2010800061503A priority patent/CN102301461A/zh
Publication of WO2010087638A2 publication Critical patent/WO2010087638A2/fr
Publication of WO2010087638A3 publication Critical patent/WO2010087638A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un appareil de traitement de substrat de type discontinu, qui peut traiter simultanément une pluralité de substrats, et dans lequel un tuyau d'alimentation en gaz et un tuyau d'évacuation de gaz destinés à fournir et à évacuer un gaz pour créer une atmosphère pendant un traitement de substrat sont opposés l'un à l'autre dans une chambre et peuvent alimenter uniformément en gaz de processus de substrat, le substrat chargé dans la chambre. Selon l'invention, un appareil de traitement de substrat de type discontinu (1), qui peut traiter simultanément une pluralité de substrats, comprend : une chambre (20) destinée à offrir un espace de traitement de substrat à une pluralité de substrats (10); un élément formant nacelle (30) sur laquelle la pluralité de substrats (10) sont chargés et pris en charge ; une pluralité d'éléments de chauffage (70) agencés selon des intervalles prédéterminés le long de la direction de stratification du substrat ; et une base de tuyaux de gaz (300) disposée dans la chambre (20), le tuyau d'alimentation en gaz (100) et le tuyau d'évacuation de gaz (200) étant reliés à la base de tuyaux de gaz (300).
PCT/KR2010/000540 2009-01-30 2010-01-29 Appareil de traitement de substrat de type discontinu WO2010087638A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011547797A JP5602157B2 (ja) 2009-01-30 2010-01-29 バッチ式基板処理装置
CN2010800061503A CN102301461A (zh) 2009-01-30 2010-01-29 批处理式基板处理装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0007371 2009-01-30
KR1020090007371A KR101016065B1 (ko) 2009-01-30 2009-01-30 배치식 열처리 장치
KR1020090035447A KR101039153B1 (ko) 2009-04-23 2009-04-23 대면적 기판처리 시스템의 가스 인젝터
KR10-2009-0035447 2009-04-23

Publications (2)

Publication Number Publication Date
WO2010087638A2 WO2010087638A2 (fr) 2010-08-05
WO2010087638A3 true WO2010087638A3 (fr) 2010-10-28

Family

ID=42396195

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/000540 WO2010087638A2 (fr) 2009-01-30 2010-01-29 Appareil de traitement de substrat de type discontinu

Country Status (4)

Country Link
JP (1) JP5602157B2 (fr)
CN (1) CN102301461A (fr)
TW (1) TW201036090A (fr)
WO (1) WO2010087638A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102106969B1 (ko) * 2013-02-26 2020-05-08 삼성디스플레이 주식회사 기판 열처리 장치 및 그 방법
KR101527158B1 (ko) * 2013-10-24 2015-06-09 주식회사 테라세미콘 배치식 기판처리 장치
KR101695948B1 (ko) * 2015-06-26 2017-01-13 주식회사 테라세미콘 기판처리 시스템

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004179672A (ja) * 2003-12-12 2004-06-24 Hitachi Kokusai Electric Inc 基板加熱装置及び半導体回路の形成方法
KR20050015931A (ko) * 2003-08-05 2005-02-21 주성엔지니어링(주) 균일한 막 증착을 위한 챔버 및 샤워 헤드
KR20060048480A (ko) * 2004-06-24 2006-05-18 도쿄 엘렉트론 가부시키가이샤 종형 ｃｖｄ 장치 및 이를 사용하는 ｃｖｄ 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021116A (ja) * 1988-03-09 1990-01-05 Tel Sagami Ltd 熱処理装置
JPH03255618A (ja) * 1990-03-05 1991-11-14 Fujitsu Ltd 縦型ｃｖｄ装置
JPH05335247A (ja) * 1992-05-27 1993-12-17 Nec Kansai Ltd 半導体製造装置
JP3844274B2 (ja) * 1998-06-25 2006-11-08 独立行政法人産業技術総合研究所 プラズマｃｖｄ装置及びプラズマｃｖｄ方法
TWI232509B (en) * 2001-07-25 2005-05-11 Tokyo Electron Ltd Processing apparatus and processing method
KR100779118B1 (ko) * 2005-12-09 2007-11-27 주식회사 테라세미콘 평판표시장치 제조시스템
JP4994724B2 (ja) * 2006-07-07 2012-08-08 株式会社東芝 成膜装置及び成膜方法
JP2008034463A (ja) * 2006-07-26 2008-02-14 Hitachi Kokusai Electric Inc 基板処理装置
KR100833712B1 (ko) * 2007-02-28 2008-05-29 주식회사 테라세미콘 대면적 기판 처리 시스템의 가스 공급 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050015931A (ko) * 2003-08-05 2005-02-21 주성엔지니어링(주) 균일한 막 증착을 위한 챔버 및 샤워 헤드
JP2004179672A (ja) * 2003-12-12 2004-06-24 Hitachi Kokusai Electric Inc 基板加熱装置及び半導体回路の形成方法
KR20060048480A (ko) * 2004-06-24 2006-05-18 도쿄 엘렉트론 가부시키가이샤 종형 ｃｖｄ 장치 및 이를 사용하는 ｃｖｄ 방법

Also Published As

Publication number Publication date
WO2010087638A2 (fr) 2010-08-05
JP5602157B2 (ja) 2014-10-08
CN102301461A (zh) 2011-12-28
JP2012516564A (ja) 2012-07-19
TW201036090A (en) 2010-10-01

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