TW201036090A - Batch type substrate treatment apparatus - Google Patents

Batch type substrate treatment apparatus Download PDF

Info

Publication number
TW201036090A
TW201036090A TW99101932A TW99101932A TW201036090A TW 201036090 A TW201036090 A TW 201036090A TW 99101932 A TW99101932 A TW 99101932A TW 99101932 A TW99101932 A TW 99101932A TW 201036090 A TW201036090 A TW 201036090A
Authority
TW
Taiwan
Prior art keywords
gas
pipe
substrate processing
gas supply
injection
Prior art date
Application number
TW99101932A
Other languages
English (en)
Chinese (zh)
Inventor
Kwan-Sun Hur
Kwang-Hee Wee
Jae-Hyun Cho
Original Assignee
Tera Semicon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090007371A external-priority patent/KR101016065B1/ko
Priority claimed from KR1020090035447A external-priority patent/KR101039153B1/ko
Application filed by Tera Semicon Corp filed Critical Tera Semicon Corp
Publication of TW201036090A publication Critical patent/TW201036090A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW99101932A 2009-01-30 2010-01-25 Batch type substrate treatment apparatus TW201036090A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090007371A KR101016065B1 (ko) 2009-01-30 2009-01-30 배치식 열처리 장치
KR1020090035447A KR101039153B1 (ko) 2009-04-23 2009-04-23 대면적 기판처리 시스템의 가스 인젝터

Publications (1)

Publication Number Publication Date
TW201036090A true TW201036090A (en) 2010-10-01

Family

ID=42396195

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99101932A TW201036090A (en) 2009-01-30 2010-01-25 Batch type substrate treatment apparatus

Country Status (4)

Country Link
JP (1) JP5602157B2 (fr)
CN (1) CN102301461A (fr)
TW (1) TW201036090A (fr)
WO (1) WO2010087638A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102106969B1 (ko) * 2013-02-26 2020-05-08 삼성디스플레이 주식회사 기판 열처리 장치 및 그 방법
KR101527158B1 (ko) * 2013-10-24 2015-06-09 주식회사 테라세미콘 배치식 기판처리 장치
KR101695948B1 (ko) * 2015-06-26 2017-01-13 주식회사 테라세미콘 기판처리 시스템

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021116A (ja) * 1988-03-09 1990-01-05 Tel Sagami Ltd 熱処理装置
JPH03255618A (ja) * 1990-03-05 1991-11-14 Fujitsu Ltd 縦型ｃｖｄ装置
JPH05335247A (ja) * 1992-05-27 1993-12-17 Nec Kansai Ltd 半導体製造装置
JP3844274B2 (ja) * 1998-06-25 2006-11-08 独立行政法人産業技術総合研究所 プラズマｃｖｄ装置及びプラズマｃｖｄ方法
TWI232509B (en) * 2001-07-25 2005-05-11 Tokyo Electron Ltd Processing apparatus and processing method
KR101022662B1 (ko) * 2003-08-05 2011-03-22 주성엔지니어링(주) 균일한 막 증착을 위한 챔버 및 샤워 헤드
JP2004179672A (ja) * 2003-12-12 2004-06-24 Hitachi Kokusai Electric Inc 基板加熱装置及び半導体回路の形成方法
US20050287806A1 (en) * 2004-06-24 2005-12-29 Hiroyuki Matsuura Vertical CVD apparatus and CVD method using the same
KR100779118B1 (ko) * 2005-12-09 2007-11-27 주식회사 테라세미콘 평판표시장치 제조시스템
JP4994724B2 (ja) * 2006-07-07 2012-08-08 株式会社東芝 成膜装置及び成膜方法
JP2008034463A (ja) * 2006-07-26 2008-02-14 Hitachi Kokusai Electric Inc 基板処理装置
KR100833712B1 (ko) * 2007-02-28 2008-05-29 주식회사 테라세미콘 대면적 기판 처리 시스템의 가스 공급 장치

Also Published As

Publication number Publication date
WO2010087638A2 (fr) 2010-08-05
JP5602157B2 (ja) 2014-10-08
CN102301461A (zh) 2011-12-28
JP2012516564A (ja) 2012-07-19
WO2010087638A3 (fr) 2010-10-28

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