WO2014104551A1 - Appareil de dépôt utilisant un dispositif de chauffage à plaque de type vertical - Google Patents

Appareil de dépôt utilisant un dispositif de chauffage à plaque de type vertical Download PDF

Info

Publication number
WO2014104551A1
WO2014104551A1 PCT/KR2013/009463 KR2013009463W WO2014104551A1 WO 2014104551 A1 WO2014104551 A1 WO 2014104551A1 KR 2013009463 W KR2013009463 W KR 2013009463W WO 2014104551 A1 WO2014104551 A1 WO 2014104551A1
Authority
WO
WIPO (PCT)
Prior art keywords
plate heater
substrate
substrates
deposition apparatus
chamber
Prior art date
Application number
PCT/KR2013/009463
Other languages
English (en)
Korean (ko)
Inventor
박형상
Original Assignee
Park Hyung Sang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Park Hyung Sang filed Critical Park Hyung Sang
Publication of WO2014104551A1 publication Critical patent/WO2014104551A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a deposition apparatus, and more particularly to a multiple substrate deposition apparatus using a vertical plate heater.
  • the thin film deposition process is a process of forming a thin film by reacting a substrate such as a wafer or glass with a gas, Chemical vapor deposition (CVD), atomic layer deposition (ALD), and sputtering are used.
  • CVD Chemical vapor deposition
  • ALD atomic layer deposition
  • sputtering are used.
  • Chemical vapor deposition which is mainly used among these deposition methods, is a technique of supplying a chemical source in a gas state into a diffusion furnace and generating a thin film such as a dielectric film, a conductive film and a semiconducting film on the substrate surface.
  • An apparatus for performing the deposition process is divided into a batch type and a single type according to the number of substrates processed at one time.
  • the batch type deposition apparatus has a high throughput per unit time compared to the single sheet method of processing the substrates one by one by simultaneously processing a plurality of substrates in one chamber.
  • the deposition apparatus is configured in a batch manner, the process is performed uniformly in a state where a plurality of substrates are mounted, thereby causing variation in process gas concentration and temperature for the entire area of all the substrates, and according to the installation position of the substrate. I had this changing problem.
  • the present invention is to solve the various problems caused, including the above-described problems, to prevent the temperature variation according to the position where the plurality of substrates are mounted, and to change the process gas concentration per region of the substrate By minimizing the change in deposition characteristics of the entire substrate by reducing the time, reducing the time required to raise the temperature of a plurality of substrates up to a predetermined temperature to improve the productivity, and the substrate is inclined so that despite the vibration or shaking
  • An object of the present invention is to provide a multiple substrate deposition apparatus using a vertical plate heater to maintain a stable arrangement.
  • these problems are exemplary, and the scope of the present invention is not limited thereby.
  • the chamber A showerhead installed to inject a process gas into the chamber; A plurality of plate heaters installed vertically side by side in the chamber; And a plurality of substrate supporting parts for supporting the substrate such that a pair of substrates are inclined at a predetermined angle for each of the plate heaters.
  • the shower head is installed to be positioned above the plate heater, and a plurality of injection holes for injecting process gas downward are formed, and the chamber has a discharge hole for discharging the reaction gas after the reaction is formed at the bottom. Can be.
  • the plate heater may be installed to secure a passage for passing the process gas from the upper side to the lower side between the plate heaters.
  • the plate heater may be arranged in a plurality of upper and lower heaters installed horizontally inside.
  • the apparatus may further include a control unit for independently controlling the heating temperature of each of the heaters installed in each of the plate heaters.
  • the substrate support may support a pair of the substrates installed to face each other between the plate heaters so that the lower interval is narrower than the upper interval.
  • the substrate supporting parts may be provided at lower ends of both sides of the plate heater, and a locking part may be formed to support the lower ends of the substrates while being spaced apart from the plate heaters.
  • the plate heater may be formed to taper both sides such that the width thereof becomes wider from the top to the bottom thereof, and the substrate support part may be formed to support the bottom of the substrate on both bottom ends of the plate heater.
  • the multiple substrate deposition apparatus using the vertical plate heater according to the present invention as described above, it is possible to prevent the temperature variation according to the position where the plurality of substrates are mounted, and to change the process gas concentration change for each region of the substrate.
  • the process gas concentration change for each region of the substrate By making it possible to minimize the change in the deposition characteristics of the entire substrate, and to reduce the time required to raise the temperature of a plurality of substrates to a predetermined temperature to improve the productivity, and the substrate is inclined so that despite the vibration or shaking And stable placement can be maintained.
  • the scope of the present invention is not limited by these effects.
  • FIG. 1 is a cross-sectional view illustrating a multiple substrate deposition apparatus using a vertical plate heater according to a first embodiment of the present invention.
  • FIG. 2 is a side view illustrating a plate heater of the multiple substrate deposition apparatus using the vertical plate heater according to the first embodiment of the present invention.
  • FIG 3 is a cross-sectional view showing a substrate support of the multiple substrate deposition apparatus using the vertical plate heater according to the first embodiment of the present invention.
  • FIG. 4 is a view for explaining the operation of the multiple substrate deposition apparatus using the vertical plate heater according to the first embodiment of the present invention.
  • FIG. 5 is a cross-sectional view illustrating main parts of a multiple substrate deposition apparatus using a vertical plate heater according to a second exemplary embodiment of the present invention.
  • FIG. 1 is a cross-sectional view illustrating a multiple substrate deposition apparatus using a vertical plate heater according to a first embodiment of the present invention.
  • a plurality of substrate deposition apparatuses 100 using a vertical plate heater may include a chamber 110, a shower head 120, and a plate heater. 130) and a substrate support 140, and the thin film may be formed by reaction of the substrate 1 with a process gas as in a thin film deposition process including a chemical vapor deposition process or an atomic layer deposition process. It can be applied to any device that performs a process to form.
  • the substrate 1 performing the deposition process may correspond to a semiconductor wafer (semiconductor wafer) in the case of a semiconductor device, and a glass substrate in the case of a flat panel display panel.
  • Various objects to be included may all be included.
  • the chamber 110 provides an internal space for performing a deposition process, is provided with a gate or a gate not shown for the entrance and exit of the substrate 1, the discharge hole 111 for discharging the process gas after the reaction is provided It may have a structure that can be formed and maintained in a vacuum state by the vacuum supplied to the inside according to the process to be performed.
  • the chamber 110 has a process gas between the plate heaters 130 installed inside to smoothly move the process gas along a predetermined path.
  • the plate heater 130 may be installed to secure the passage 112 for passing from the upper side to the lower side, and for this purpose, both sides of the plate heater 130 may be directly spaced apart from the bottom surface 113. It may be fixed or may be fixed using a fixing member such as a bracket.
  • the showerhead 120 is installed to inject a process gas into the chamber 110.
  • the chamber 110 may have a discharge hole 111 formed in the lower portion so that the process gas that has completed the reaction moves downward to be easily discharged.
  • the plate heater 130 is installed vertically in a plurality of side by side in the chamber 110, as in the present embodiment may have a plate shape, and further may have a rectangular parallelepiped structure, but is not necessarily limited to this shape, if the plate structure There is no limitation on the shape.
  • the plate heater 130 may be installed at the same height at equal intervals in the chamber 110 for the temperature uniformity in the chamber 120.
  • the plate heater 130 may be arranged in a plurality of upper and lower heaters in which a heater 131 is horizontally installed therein, and thus, the temperature of the upper and lower regions of the substrate 1 may be set, respectively.
  • the heater 131 may be, for example, a wire heater, and the present invention is not limited thereto. Any heater 131 may be used as long as it generates a heating element including a heating coil, a heating block, a halogen lamp, or a heat circulation supply unit.
  • the controller 150 may be provided.
  • the controller 150 may supply power supply for operation through the connector 132 of the heater 131, and may independently control the heating temperature of each heater 131 installed in a plurality of plate heaters 130. have.
  • the control unit 150 is, for example, each of the heaters 131 so that the temperature of the entire region of the substrate 1 is uniform from the data of measuring the temperatures of the upper and lower regions of the substrate 1 during the deposition process.
  • thermo couple thermo couple
  • Each of the heaters 131 may be subjected to feedback control so that the temperature is uniform.
  • the substrate supporter 140 supports the substrate 1 such that the pair of substrates 1 are installed to be inclined at a predetermined angle for each plate heater 130. It may be made of a number corresponding to the number of substrates (1) that can be loaded at one time 110.
  • the substrate supporting unit 140 has a pair of substrates 1 which are installed to face each other between the plate heaters 130 as in the present embodiment, and the lower interval d1 has an upper interval d2. It may be supported to be kept narrow compared to, for this purpose, for example, may be provided at each of the lower ends of the plate heater 130, the lower end of the substrate 1 is latched to be supported in a state spaced apart from the plate heater 130
  • the unit 141 may be formed. In this case, the upper surface of the substrate 1 may be supported by contacting the plate heater 130.
  • the substrate support 140 is not limited to that provided in the plate heater 130, as in this embodiment, and as another embodiment both ends are fixed to the inner surface of the chamber 110 to be separated from the plate heater 130 It may be installed as possible, in addition to this, it is possible to enable the inclined installation of the substrate 1 by various installation methods.
  • the substrate 1 installed to be inclined by the substrate support 140 may have an angle ⁇ of, for example, 3 to 15 degrees with respect to an imaginary vertical line, and the angle range is one example and is not necessarily limited thereto.
  • the angle ⁇ may vary depending on the size of the substrate 1 and the size of the chamber 110 and the plate heater 130.
  • FIG. 5 is a cross-sectional view illustrating main parts of a deposition apparatus using a vertical plate heater according to a second embodiment of the present invention.
  • a plate heater is used in the multiple substrate deposition apparatus using the vertical plate heater according to the second embodiment of the present invention.
  • An example of the structure of the 230 and the substrate support 240 is different from that of the previous embodiment, which will be described below.
  • the tapered portions 233 may be formed on both sides by tapering both sides of the plate heater 230 so as to widen from the upper end to the lower end.
  • the substrate supporter 240 may be formed to support the lower ends of the substrates 1 at both lower ends of the plate heater 230, and for example, the engaging grooves 241 for inserting and engaging the lower ends of the substrates 1. This can be formed.
  • the operation of the multi-substrate deposition apparatus using the vertical plate heater according to the embodiment of the present invention will be described, and for the sake of understanding, the multiple substrate deposition using the vertical plate heater according to the first embodiment of the present invention will be described.
  • the apparatus 100 will be described by way of example.
  • the present invention it is possible to configure a furnace type deposition equipment for simultaneously loading and depositing a plurality of substrates (1) in the chamber 110, at this time, to ensure the temperature uniformity of the substrate (1) and At the same time, as shown in FIG. 4, the portion downstream of the process gas is narrower than the portion corresponding to the upstream, thereby further inducing adsorption of the process gas and increasing the deposition uniformity.
  • a temperature variation may occur according to an installation position of the substrate 1 to prevent the deposition characteristics from being changed.
  • the substrate 1 placed at an intermediate position has a relatively low thermal conductivity, so that the temperature of the substrate 1 is lower than that of the outer substrate 1, and the configuration of the plate heater 130 and the heater 131 are shown.
  • the temperature setting or control configuration for each, but the time taken to raise the temperature of the substrate 1 to a specific temperature can be shortened.
  • the process gas passing through the substrate 1 since the process gas passing through the substrate 1 has a higher concentration per unit volume due to the funnel effect, the gas concentration may be lowered in the downstream region, thereby eliminating the disadvantage of changing deposition characteristics. .
  • the substrate 1 since the substrate 1 is inclined by the substrate support 140, the substrate 1 may be stably disposed in the chamber 110, and shaking may be suppressed.
  • injection hole 122 process gas line

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil de dépôt pour une pluralité de substrats utilisant un dispositif de chauffage à plaque de type vertical comprenant : une chambre ; une tête d'arrosage disposée dans la chambre de manière à pulvériser un gaz de traitement ; une pluralité de dispositifs de chauffage à plaque disposés verticalement de manière à être parallèles les uns aux autres dans la chambre ; et des unités de support pour la pluralité de substrats, qui soutiennent une paire de substrats de sorte que les substrates soient inclinés à un certain angle de manière à être disposés dans chacun des dispositifs de chauffage à plaque. Selon la présente invention, des écarts de température, suivant les positions auxquelles la pluralité de substrats sont installés, peuvent être évités, et les changements de caractéristiques de dépôt par rapport à tous les substrats peuvent être réduits au minimum parce que les changements de concentrations de gaz de traitement peuvent être compensés dans chaque zone du substrat. De plus, la productivité peut être améliorée parce que le temps passé à élever la température de la pluralité de substrats à une température prédéterminée peut être économisé, et les substrats sont placés à un angle de manière à maintenir un agencement stable malgré les vibrations, une oscillation, ou similaire.
PCT/KR2013/009463 2012-12-31 2013-10-23 Appareil de dépôt utilisant un dispositif de chauffage à plaque de type vertical WO2014104551A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20120157872A KR101490993B1 (ko) 2012-12-31 2012-12-31 수직형 플레이트 히터를 이용한 증착 장치
KR10-2012-0157872 2012-12-31

Publications (1)

Publication Number Publication Date
WO2014104551A1 true WO2014104551A1 (fr) 2014-07-03

Family

ID=51021564

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/009463 WO2014104551A1 (fr) 2012-12-31 2013-10-23 Appareil de dépôt utilisant un dispositif de chauffage à plaque de type vertical

Country Status (2)

Country Link
KR (1) KR101490993B1 (fr)
WO (1) WO2014104551A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021227133A1 (fr) * 2020-05-13 2021-11-18 深圳市纳设智能装备有限公司 Structure de turbine à chambre de réaction pour appareil de dépôt chimique en phase vapeur (cvd)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101695388B1 (ko) * 2015-06-30 2017-01-12 (주) 나인테크 인라인 화학기상증착시스템

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01313924A (ja) * 1988-06-13 1989-12-19 Fuji Electric Co Ltd 縦型プラズマｃｖｄ装置
JP2007284766A (ja) * 2006-04-19 2007-11-01 Shimadzu Corp 縦型プラズマｃｖｄ装置
KR20100128864A (ko) * 2009-05-29 2010-12-08 주식회사 케이씨텍 원자층 증착장치
KR20110104219A (ko) * 2010-03-16 2011-09-22 주식회사 케이씨텍 가스분사 유닛 및 이를 구비하는 직립방식 증착장치
KR101134277B1 (ko) * 2010-10-25 2012-04-12 주식회사 케이씨텍 원자층 증착 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2670561B2 (ja) * 1993-10-25 1997-10-29 株式会社 半導体エネルギー研究所 プラズマ気相反応による被膜形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01313924A (ja) * 1988-06-13 1989-12-19 Fuji Electric Co Ltd 縦型プラズマｃｖｄ装置
JP2007284766A (ja) * 2006-04-19 2007-11-01 Shimadzu Corp 縦型プラズマｃｖｄ装置
KR20100128864A (ko) * 2009-05-29 2010-12-08 주식회사 케이씨텍 원자층 증착장치
KR20110104219A (ko) * 2010-03-16 2011-09-22 주식회사 케이씨텍 가스분사 유닛 및 이를 구비하는 직립방식 증착장치
KR101134277B1 (ko) * 2010-10-25 2012-04-12 주식회사 케이씨텍 원자층 증착 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021227133A1 (fr) * 2020-05-13 2021-11-18 深圳市纳设智能装备有限公司 Structure de turbine à chambre de réaction pour appareil de dépôt chimique en phase vapeur (cvd)

Also Published As

Publication number Publication date
KR101490993B1 (ko) 2015-02-06
KR20140087505A (ko) 2014-07-09

Similar Documents

Publication Publication Date Title
CN102082072B (zh) 气体喷射装置及具备该气体喷射装置的处理室
WO2014168331A1 (fr) Dispositif de traitement de substrat
WO2015102256A1 (fr) Appareil de traitement de substrat et procédé de traitement de substrat
WO2013147481A1 (fr) Appareil et équipement en amas pour croissance épitaxiale sélective
WO2015030457A1 (fr) Appareil à plasma pour gravure et nettoyage en phase gazeuse
WO2014098486A1 (fr) Appareil de traitement de substrat et procédé pour commander la température d'un élément chauffant
WO2014104551A1 (fr) Appareil de dépôt utilisant un dispositif de chauffage à plaque de type vertical
WO2015083884A1 (fr) Appareil de traitement de substrat
WO2010140766A2 (fr) Unité de support de substrat et appareil de traitement de substrat la comprenant
WO2015041392A1 (fr) Élément chauffant et appareil de traitement de substrat comportant ce dernier
WO2011136604A2 (fr) Appareil de traitement de substrat
WO2013191414A1 (fr) Appareil de traitement de substrat
WO2009120034A2 (fr) Appareil et procédé de traitement d’un substrat
WO2014061979A1 (fr) Contrôleur de flux gazeux pour la fabrication de tranches à planéité supérieure
WO2015083883A1 (fr) Appareil permettant de traiter un substrat
WO2013058454A1 (fr) Appareil de traitement de substrat
WO2011136603A2 (fr) Appareil de traitement au plasma
KR102166491B1 (ko) 배치식 기판처리 장치
KR101152598B1 (ko) 기판처리장치
KR101167989B1 (ko) 기판 처리 장치
WO2014073806A1 (fr) Tête d'aspersion, et appareil de dépôt de film mince comprenant celle-ci
KR20170106760A (ko) 기판 처리장치에 구비되는 기판안착부
KR20100077813A (ko) 반도체 제조용 수직형 확산로
KR101199939B1 (ko) 기판 처리 장치
KR20110013631A (ko) 대면적 챔버의 가스분사장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13868393

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13868393

Country of ref document: EP

Kind code of ref document: A1