WO2011136603A2 - Appareil de traitement au plasma - Google Patents

Appareil de traitement au plasma Download PDF

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Publication number
WO2011136603A2
WO2011136603A2 PCT/KR2011/003191 KR2011003191W WO2011136603A2 WO 2011136603 A2 WO2011136603 A2 WO 2011136603A2 KR 2011003191 W KR2011003191 W KR 2011003191W WO 2011136603 A2 WO2011136603 A2 WO 2011136603A2
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WO
WIPO (PCT)
Prior art keywords
chamber
plasma
unit
electrode
substrate
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Application number
PCT/KR2011/003191
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English (en)
Korean (ko)
Other versions
WO2011136603A3 (fr
Inventor
이경호
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to CN2011800204056A priority Critical patent/CN102859665A/zh
Priority to JP2013507889A priority patent/JP2013529358A/ja
Publication of WO2011136603A2 publication Critical patent/WO2011136603A2/fr
Publication of WO2011136603A3 publication Critical patent/WO2011136603A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Definitions

  • the present invention relates to a plasma processing apparatus. More particularly, the present invention relates to a plasma processing apparatus capable of minimizing offset of electromagnetic fields generated by interaction between a plurality of plasma electrodes.
  • RF Plasma Processes or RF Plasma Processing. &Quot;
  • the process using plasma has been used in etching and deposition techniques in semiconductor manufacturing techniques such as large-scale integrated circuits, and particularly in the manufacture of display apparatuses such as liquid crystal displays (LCDs). have.
  • LCDs liquid crystal displays
  • a process using a plasma plays an important role.
  • the main method used to increase the density of the plasma is to use a plurality of plasma electrodes.
  • FIG. 1 is a view schematically showing the configuration of a conventional plasma processing apparatus.
  • RF antennas and grounds disposed at one end and the other end of the plurality of plasma electrodes 50 are alternately arranged oppositely. do.
  • a plurality of plasma electrodes 50 are installed on a substrate 40 supported inside the reaction chamber 30, and RF antennas and grounds are disposed at one end and the other end of the plurality of plasma electrodes 50, respectively. Connected. At this time, it can be seen that the RF antenna and the ground are alternately arranged in opposite directions.
  • the present invention has been made to solve the above problems of the prior art, the present invention is to provide a plasma processing apparatus that can minimize the offset of the electromagnetic field generated by the interaction between a plurality of plasma electrodes. do.
  • FIG. 1 is a diagram schematically showing the configuration of a conventional plasma processing apparatus.
  • FIG. 2 is a diagram illustrating a configuration of a plasma processing apparatus according to an embodiment of the present invention.
  • FIG 3 is a view showing only the configuration of a unit plasma electrode according to an embodiment of the present invention.
  • FIG. 4 is a diagram schematically illustrating how an RF signal flows in a unit plasma electrode according to an exemplary embodiment of the present invention.
  • FIG. 5 is a perspective view showing an external configuration of a plasma processing apparatus according to an embodiment of the present invention.
  • FIG. 6 is a diagram schematically illustrating a disposition state of a plurality of first electrode parts and a second electrode part according to an exemplary embodiment of the present invention.
  • FIG. 7 is a diagram illustrating a configuration around an RF antenna connected to a unit plasma electrode.
  • FIG. 8 is a view showing the configuration of a plasma processing apparatus according to another embodiment of the present invention.
  • a plasma processing apparatus comprises a unit chamber assembly having a first chamber and a second chamber disposed independently of each other, the substrate is injected into the plasma processing; It has a bent shape and comprises a unit plasma electrode for generating a plasma in the first chamber and the second chamber.
  • the plasma processing apparatus is a plasma processing apparatus comprising a unit chamber assembly having a first chamber and a second chamber disposed up and down independently of each other, the substrate is injected into the plasma processing; And a unit plasma electrode configured to generate plasma for plasma processing the substrate, the unit plasma electrode being disposed in the unit chamber assembly, wherein the unit plasma electrode is disposed in the first chamber to generate a plasma inside the first chamber. 1 electrode portion; A second electrode part disposed in the second chamber to generate a plasma inside the second chamber; And a bent portion connecting the first electrode portion and the second electrode portion.
  • FIG. 2 is a diagram illustrating a configuration of a plasma processing apparatus according to an embodiment of the present invention.
  • the plasma processing apparatus 1 of the present invention may perform all processes using plasma in the overall semiconductor processing field. Therefore, the " plasma treatment " of the substrate 10 hereinafter will not only form a semiconductor layer on the substrate 10, but also modify the surface of the semiconductor formed on the substrate 10 and It should be understood that the present invention may be interpreted as a meaning including etching the semiconductor layer formed on the substrate.
  • the material of the substrate 10 processed by the plasma processing apparatus 1 of the present invention is preferably a glass substrate, but is not limited thereto. Therefore, it is found that substrates of various materials such as plastic, polymer, silicon wafer, stainless steel, etc. can be processed in the plasma processing apparatus 1 of the present invention. And the board
  • substrate 10 is formed in substantially rectangular shape.
  • the plasma processing apparatus 1 may include a unit chamber assembly 100.
  • the unit chamber assembly 100 is basically a unit composed of the first chamber 110 and the second chamber 120 disposed independently of each other.
  • the independent arrangement of the first chamber 110 and the second chamber 120 may be interpreted to mean that the first chamber 110 and the second chamber 120 are separated in position to provide different plasma processing spaces. Can be. That is, different substrates 10 may be plasma-processed independently in the first chamber 110 and the second chamber 120.
  • FIG. 2 illustrates that one substrate 10 is plasma-processed at a time in the first chamber 110 and the second chamber 120, in some cases, the first substrate 10 may be a boat (not shown).
  • the plurality of substrates 10 may be simultaneously plasma treated in the chamber 110 and the second chamber 120, respectively.
  • General components of the process chamber may be installed in the first chamber 110 and the second chamber 120 to provide an independent plasma processing space for the substrate 10.
  • a plurality of driving roller units having a predetermined length may be installed in the first chamber 110 and the second chamber 120.
  • the plurality of driving roller units may perform a function of moving the substrate 10 in an inline manner while supporting the substrate 10.
  • the plurality of driving roller units are rotated in the advancing direction of the substrate 10, which is a direction of the unloading portion of the substrate 10 to be described later, while contacting the lower surface of the substrate 10 to rotate the substrate 10 in the first chamber.
  • the substrate 10 is loaded into the 110 and the second chamber 120.
  • the plurality of driving roller units support the substrate 10 while the plasma processing is performed on the substrate 10, and when the plasma processing is performed on the substrate 10, the substrate 10. May rotate in the advancing direction of the substrate 10 while contacting the bottom surface of the substrate 10 to unload the substrate 10 to the outside.
  • the plurality of driving roller units may be formed in different widths according to the installation position, but the diameters are preferably all the same.
  • a loading unit having a predetermined width and height may be installed in front of the first chamber 110 and the second chamber 120 in which the unit plasma electrode 200 is not disposed.
  • the loading part may be opened to serve as a passage through which the substrate 10 is loaded. Since the loading unit needs to be blocked to seal the first chamber 110 and the second chamber 120 while the plasma processing is performed, a door (not shown) that is opened and closed in the vertical direction may be installed in the loading unit. .
  • an unloading part having a predetermined width and height may be formed on the rear surfaces of the first chamber 110 and the second chamber 120 facing the surface on which the loading part is disposed. .
  • the unloading part may be opened to serve as a passage through which the substrate 10 is unloaded.
  • the unloading part since the unloading part needs to be blocked to seal the first chamber 110 and the second chamber 120 while the heat treatment process is performed, the unloading part is opened and closed in the vertical direction.
  • a door (not shown) may be installed.
  • a heater may be installed in the first chamber 110 and the second chamber 120.
  • the heater may be installed inside or outside the first and second chambers 110 and 120 to perform a function of supplying heat required for plasma processing to the substrate 10.
  • the heater may include a plurality of rod-shaped unit heaters (not shown) in which a heating element is inserted into the quartz tube.
  • FIG. 2 shows that the substrate 10 is loaded alone or plasma-processed into the first chamber 110 or the second chamber 120, but preferably the substrate 10 is a substrate holder ( It may be loaded in the first chamber 110 or the second chamber 120 in a state seated in the (not shown) to be plasma-processed. This is to prevent deformation of the substrate 10 that may occur when the substrate 10 is heated by the heater in the plasma processing process for the substrate 10.
  • a gas supply unit for supplying process gas into the first chamber 110 and the second chamber 120 may be installed in the first chamber 110 and the second chamber 120. Can be. The gas supplied to the first chamber 110 and the second chamber 120 may be converted into plasma to participate in plasma processing of the substrate 10.
  • the plasma processing apparatus 1 of the present invention may include a controller (not shown) that controls the amount of process gas supplied to the first and second chambers 110 and 120.
  • the cooling unit may be installed in the first chamber 110 and the second chamber 120.
  • the cooling unit may perform a function of cooling the substrate 10 on which the plasma process is completed.
  • the cooling unit may employ the principle of construction of a variety of known cooling means, including water-cooled and air-cooled.
  • first chamber 110 and the second chamber 120 may be arranged independently from each other, but may be preferably arranged up and down independently of each other, as shown in FIG. If any one of the first chamber 110 and the second chamber 120 is located at the top, it is natural that the other is located at the bottom. In the following description, it is assumed that the first chamber 110 is positioned above the second chamber 120 for convenience of description.
  • the plasma processing apparatus 1 may include a unit plasma electrode 200.
  • the unit plasma electrode 200 may perform a function of generating plasma by receiving power from the outside.
  • the method of generating the plasma by the unit plasma electrode 200 of the present invention is not particularly limited, but preferably, the plasma may be generated by an inductive coupling method.
  • the unit plasma electrode 200 may convert the process gas supplied into the first and second chambers 110 and 120 into plasma by receiving an RF power supplying a high frequency voltage to generate an electromagnetic field.
  • one unit plasma electrode 200 having a bent shape generates a plasma in both the first chamber 110 and the second chamber 120.
  • FIG. 3 is a view showing only the configuration of a unit plasma electrode according to an embodiment of the present invention.
  • the shape and configuration of the unit plasma electrode 200 will be described in detail with reference to FIG. 3 along with FIG. 2.
  • the unit plasma electrode 200 of the present invention has a bent shape. More specifically, the unit plasma electrode 200 of the present invention includes a first electrode portion 210 disposed in the first chamber 110, a second electrode portion 220 disposed in the second chamber 120, and a first electrode. It is configured to include a bent portion 230 for interconnecting the electrode portion 210 and the second electrode portion 220.
  • the bent portion 230 may have one or more bend points, and preferably have two bend points as shown in FIG. 3.
  • the unit plasma electrode 200 may have a 'c' or inverse 'c' shape. Since the unit plasma electrode 200 is configured in this manner, it is easy to arrange one unit plasma electrode 200 in both the first chamber 110 and the second chamber 120.
  • the RF antenna 300 is connected to the end of the first electrode unit 210 and the ground 400 is connected to the end of the second electrode unit 220.
  • the RF antenna 300 may perform a function of applying an RF signal to the unit plasma electrode 200, and the ground 400 performs a function of allowing the applied RF signal to flow through the unit plasma electrode 200. can do.
  • the RF antenna 300 is connected to the end of the first electrode unit 210, but the RF antenna 300 is connected to one end of one unit plasma electrode 200 and the ground 400 is connected to the other end. ), It is not important to which electrode unit the RF antenna 300 is connected. Therefore, the RF antenna 300 may be connected to the end of the second electrode unit 220, and the ground 400 may be connected to the end of the first electrode unit 210. However, hereinafter, it is assumed that the RF antenna 300 is connected to the end of the first electrode unit 210 will be described.
  • FIG. 4 is a diagram schematically illustrating how an RF signal flows in a unit plasma electrode according to an exemplary embodiment of the present invention.
  • an RF signal is applied to the first electrode part 210 disposed in the first chamber 110, and an RF signal flows to the second electrode part 220 disposed in the second chamber 120.
  • the RF signal applied from the RF antenna 300 is the RF antenna 300-> the first electrode portion 210-> the bent portion 230-> the second electrode portion 220-> the ground 400 Can flow in order.
  • plasma may be generated and maintained by the first electrode unit 210 in the first chamber 110, and plasma may be generated by the second electrode unit 220 in the second chamber 120. Can be generated and maintained.
  • the unit plasma electrode 200 may be formed of a hollow quartz tube. Since the quartz tube has excellent physical properties such as heat resistance, it may help to prevent deformation of the unit plasma electrode 200.
  • a predetermined metal wire (not shown) through which an RF signal flows may be disposed in the central empty space formed inside the quartz tube.
  • the metal wire for example, copper wire having excellent conductivity may be used.
  • FIG. 5 is a perspective view showing an external configuration of a plasma processing apparatus according to an embodiment of the present invention.
  • a plurality of unit plasma electrodes 200 may be disposed in one unit chamber assembly 100. That is, a plurality of first electrode parts 210 are disposed in the first chamber 110 of the unit chamber assembly 100, and the second electrode part 220 is disposed in the second chamber 120 of the unit chamber assembly 100. It may be arranged in plurality.
  • FIG. 6 is a diagram schematically illustrating a disposition state of a plurality of first electrode parts and a second electrode part according to an exemplary embodiment of the present invention.
  • FIG. 6 is a view schematically showing how a plurality of first electrode portions 210 are disposed in the first chamber 110
  • FIG. 6 (b) shows a second chamber ( 120 is a diagram schematically illustrating how a plurality of second electrode units 220 are disposed inside.
  • the first chamber 110 has a planar shape having a substantially rectangular shape, and the plurality of first electrode portions 210 of the plurality of unit plasma electrodes 200 may include the first chamber ( 110 may be disposed with a predetermined interval in parallel with the short side direction of the substrate 10 disposed inside. Accordingly, the plasma treatment of the substrate 10 may be more uniformly performed in the first chamber 110.
  • the RF signal is applied in one constant direction, that is, from the bottom to the top of the first chamber 110. If the directions of the RF signals applied to the plurality of first electrode portions 210 are opposite to each other, the RF signals may be canceled, but according to the present invention, the RF signals applied to the plurality of first electrode portions 210 may be offset. Since A is the same direction, the signal attenuation does not appear, so that the strength of the electromagnetic field can be kept uniform.
  • the planar shape of the first chamber 110 is formed in a substantially rectangular shape, and similarly to the first electrode part 210, a plurality of unit plasma electrodes 200 may be provided.
  • the two second electrode portions 220 may be disposed at regular intervals in parallel with the short side direction of the substrate 10 disposed in the second chamber 120. Accordingly, the plasma treatment of the substrate 10 may be more uniformly performed in the second chamber 120.
  • the RF signal is applied in one constant direction, that is, from the top to the bottom.
  • the RF signals applied to the plurality of second electrode parts 220 are in the same direction, the attenuation of the signal does not appear and the intensity of the electromagnetic field can be maintained uniformly.
  • FIG. 7 is a diagram illustrating a configuration around an RF antenna connected to a unit plasma electrode.
  • a tube 310 surrounding the RF antenna 300 is formed outside the RF antenna 300, and an insulating portion 320 may be formed on the outer circumferential surface of the tube 310.
  • the insulating part 320 may be in contact with the first chamber 110 of the plasma processing apparatus 1, and may be fixed by a flange 330 and a washer 340 for fixing the RF antenna 300.
  • the tube 310 is brought into contact with the flange 330 by the RF antenna sealing cap 350 and the RF antenna sealing ferrule 360, which may be fixed to the first chamber 110 of the plasma processing apparatus 1. Will be.
  • the RF antenna sealing cap 350 and the RF antenna sealing ferrule 360 may be made of an insulating material.
  • One or more O-rings 370 may be further provided for sealing between the RF antenna 300 and the tube 310 surrounding the RF antenna 300 and the first chamber 110.
  • FIG. 8 is a view showing the appearance of a plasma processing apparatus according to another embodiment of the present invention.
  • the plasma processing apparatus 1a basically includes a plurality of unit chamber assemblies 100a including the first chamber 110a and the second chamber 120a. Can be.
  • FIG. 8 illustrates that the plasma processing apparatus 1a includes two unit chamber assemblies 100a, but the present invention is not limited thereto, and the number of unit chamber assemblies 100a required for the purposes of the present invention may be plasma. It may be included in the processing apparatus 1a.
  • the plurality of unit chamber assemblies 100a are preferably arranged in a vertical line as shown in FIG. 8. Accordingly, the first chamber 110a and the second chamber 120a are alternately arranged vertically. For example, if the plasma processing apparatus 1a includes two unit chamber assemblies 100a, the first chamber 110a-> second chamber 120a-> first chamber 110a-> The two chambers 120a are arranged in order.
  • the plasma processing apparatus 1 may confirm that four substrates 10a are simultaneously plasma processed. In other words.
  • the productivity of the process can be improved.
  • the plasma processing apparatus 1a according to another embodiment of the present invention has the same configuration as the plasma processing apparatus 1a according to the embodiment of the present invention described above, except that the unit chamber assembly 100a is provided in plurality.
  • a unit plasma electrode 200a having a bent shape is disposed in one unit chamber assembly 100a. Therefore, the components described in the plasma processing apparatus 1 according to the embodiment of the present invention may be equally applied to the plasma processing apparatus 1a according to another embodiment of the present invention, and thus detailed description thereof will be omitted. Let's do it.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treatment Of Fiber Materials (AREA)

Abstract

La présente invention concerne un appareil de traitement au plasma. Selon un mode de réalisation de l'invention, l'appareil de traitement au plasma (1) comporte une première et une deuxième chambres (110, 120) qui sont disposées indépendamment l'une de l'autre, un ensemble chambre unitaire (100) pour traiter au plasma un substrat (10) devant y être introduit, et une électrode au plasma unitaire (200) qui a une forme courbe et génère le plasma dans les première et deuxième chambres (110, 120).
PCT/KR2011/003191 2010-04-30 2011-04-29 Appareil de traitement au plasma WO2011136603A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2011800204056A CN102859665A (zh) 2010-04-30 2011-04-29 等离子体处理装置
JP2013507889A JP2013529358A (ja) 2010-04-30 2011-04-29 プラズマ処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0041048 2010-04-30
KR1020100041048A KR101205242B1 (ko) 2010-04-30 2010-04-30 플라즈마 처리 장치

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WO2011136603A2 true WO2011136603A2 (fr) 2011-11-03
WO2011136603A3 WO2011136603A3 (fr) 2012-03-08

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JP (1) JP2013529358A (fr)
KR (1) KR101205242B1 (fr)
CN (1) CN102859665A (fr)
TW (1) TW201201246A (fr)
WO (1) WO2011136603A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013214445A (ja) * 2012-04-03 2013-10-17 Ihi Corp プラズマ処理装置
CN105990080A (zh) * 2015-02-02 2016-10-05 苏州爱特维电子科技有限公司 等离子体处理装置

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CN110828273B (zh) * 2018-08-09 2022-07-22 北京北方华创微电子装备有限公司 等离子体设备和等离子体系统

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KR100576093B1 (ko) * 2004-03-15 2006-05-03 주식회사 뉴파워 프라즈마 다중 배열된 진공 챔버를 구비한 플라즈마 반응 챔버
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013214445A (ja) * 2012-04-03 2013-10-17 Ihi Corp プラズマ処理装置
CN105990080A (zh) * 2015-02-02 2016-10-05 苏州爱特维电子科技有限公司 等离子体处理装置

Also Published As

Publication number Publication date
CN102859665A (zh) 2013-01-02
KR20110121448A (ko) 2011-11-07
JP2013529358A (ja) 2013-07-18
WO2011136603A3 (fr) 2012-03-08
TW201201246A (en) 2012-01-01
KR101205242B1 (ko) 2012-11-27

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