WO2016108568A1 - Appareil de traitement par plasma - Google Patents

Appareil de traitement par plasma Download PDF

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Publication number
WO2016108568A1
WO2016108568A1 PCT/KR2015/014392 KR2015014392W WO2016108568A1 WO 2016108568 A1 WO2016108568 A1 WO 2016108568A1 KR 2015014392 W KR2015014392 W KR 2015014392W WO 2016108568 A1 WO2016108568 A1 WO 2016108568A1
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WIPO (PCT)
Prior art keywords
capacitively coupled
plasma
power
chamber
capacitive coupling
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PCT/KR2015/014392
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English (en)
Korean (ko)
Inventor
김규동
구자현
안효승
Original Assignee
(주)젠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from KR1020140194870A external-priority patent/KR101577272B1/ko
Priority claimed from KR1020140194862A external-priority patent/KR101633652B1/ko
Priority claimed from KR1020150175675A external-priority patent/KR101775361B1/ko
Application filed by (주)젠 filed Critical (주)젠
Publication of WO2016108568A1 publication Critical patent/WO2016108568A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes

Definitions

  • the present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus for a roll-to-roll process for distributing a large area by distributing a current by using a power splitter in a roll-to-roll process, and a power splitter in an inline system.
  • Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules.
  • the active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, ashing, and the like.
  • plasma sources for generating plasma there are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency.
  • inductively coupled plasma sources can easily increase the ion density with the increase of radio frequency power supply, and thus the ion bombardment is relatively low and suitable for obtaining a high density plasma. Therefore, inductively coupled plasma sources are commonly used to obtain high density plasma. Inductively coupled plasma sources are typically developed using a radio frequency antenna (RF antenna) and a transformer (also called transformer coupled plasma). The development of technology to improve the characteristics of plasma, and to increase the reproducibility and control ability by adding an electromagnet or a permanent magnet or adding a capacitive coupling electrode.
  • RF antenna radio frequency antenna
  • transformer also called transformer coupled plasma
  • Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control.
  • the energy of the radio frequency power supply is almost exclusively connected to the plasma through capacitive coupling, the plasma ion density can only be increased or decreased by increasing or decreasing the capacitively coupled radio frequency power.
  • radio frequency power supplied to the electrode is not uniform, it is difficult to generate a uniform plasma.
  • the present invention has been made in view of the above problems, and an object of the present invention is to uniformly supply power to a capacitively coupled electrode using a power splitter, thereby discharging a large density of uniform plasma in a roll-to-roll process to a substrate. It is to provide a plasma processing apparatus for a roll-to-roll process that can process.
  • Another object of the present invention is to provide an inline substrate processing apparatus using a power splitter for uniformly discharging high density large area plasma by uniformly supplying power to a process chamber using a power splitter in an inline system.
  • Plasma processing apparatus for achieving the above object, a plurality of capacitive coupling electrode for discharging the capacitively coupled plasma; A power splitter for receiving power from a power source and distributing power to each of the plurality of capacitive coupling electrodes; A substrate transfer part supporting the flexible substrate in a curved shape in the plasma region and having a support roller for transferring in a roll-to-roll manner; And a process chamber provided inside the capacitively coupled electrode and the substrate transfer part to process the flexible substrate in an internal discharge space, wherein the plurality of capacitively coupled electrodes are spaced apart from the support roller and are arranged around the circumference of the support roller. Characterized in that is installed along.
  • a plasma processing apparatus comprising: a plurality of process chambers for plasma processing a substrate to be processed provided in an inline manner; A plurality of capacitive coupling electrodes provided in the plurality of process chambers for discharging the plasma capacitively coupled into the process chamber; And a power splitter for distributing power to each of the plurality of capacitively coupled electrodes.
  • a plasma processing apparatus for achieving the above object, a plurality of process chambers for plasma processing the substrate to be provided provided connected in an inline manner; A plurality of capacitively coupled electrode assemblies provided in each of the plurality of process chambers and having a plurality of capacitively coupled electrodes for discharging the plasma capacitively coupled into the process chamber; And a plurality of power splitters connected to each of the plurality of capacitively coupled electrode assemblies to distribute power to the plurality of capacitively coupled electrodes of the capacitively coupled electrode assembly.
  • the loading chamber is connected in an in-line manner for loading the substrate to be processed into the process chamber; And an unloading chamber connected in an inline manner to unload the plasma treated substrate from the process chamber.
  • the apparatus may further include a substrate transfer means for supporting and moving the substrate.
  • the power splitter may further include a power supply source for supplying radio frequency power; An inner shield connected to the power source and an outer shield into which the inner core is inserted; A dielectric provided between the inner core and the outer shield; And a plurality of secondary windings installed around the inner core to induce current and connected to each of the plurality of capacitive coupling electrodes.
  • the power splitter preferably provides an antiphase current to neighboring electrodes of the plurality of capacitively coupled electrodes.
  • the capacitive coupling electrode may include an electrode body having a shower head shape having a plurality of gas injection holes for supplying a process gas provided from a gas supply source to a plasma region; A gas supply path formed in the electrode body and injected with a process gas, and formed of a conductive material and connected to a power splitter for supplying power to the electrode body; And a plurality of gas injection holes provided on a lower surface of the electrode body to inject process gas into the chamber.
  • a magnetic installation member having a shape in which one side is opened is installed on the upper portion of the capacitive coupling electrode to fix the magnet in the open space.
  • the process chamber is preferably formed with a gas outlet connected to the exhaust pump.
  • a plasma processing apparatus comprising: a capacitively coupled electrode assembly configured to discharge a capacitively coupled plasma, the capacitively coupled electrode assembly having a plurality of capacitively coupled electrodes arranged in one direction; A power splitter for receiving power from a power source and distributing power to each of said plurality of capacitively coupled electrodes; A substrate transfer part having a support roller for transferring in-line or roll-to-roll into the plasma region; And a chamber for processing the substrate in an internal discharge space provided inside the capacitive coupling electrode and the substrate transfer unit.
  • the plurality of capacitively coupled electrodes of the capacitively coupled electrode assembly may be linearly arranged in two rows in one direction on the top of the chamber.
  • the capacitive coupling electrode has a shower head shape, an electrode body on a square plate; A gas supply passage formed in the electrode body and injecting a process gas and connected to the power splitter for supplying power to the electrode body; And a plurality of gas injection holes provided on a lower surface of the electrode body to inject a process gas into the chamber.
  • a water cooling cooling block is further installed on the gas supply path to control overheating therein.
  • the vacuum unit is installed on the upper portion of the electrode body on the square plate.
  • the rectangular body of the electrode body is preferably to increase the surface area of the edge portion in a range that does not block the plurality of gas injection holes.
  • the gas supply passage is preferably formed of a conductive material.
  • the plasma processing apparatus and the inline substrate processing apparatus for the roll-to-roll process according to the present invention described above since the power is uniformly supplied to the capacitively coupled electrode using the power splitter, the effect of uniformly discharging the high density large area plasma is have.
  • the plasma discharge efficiency of the process gas may be improved, and the amount of particles generated during the process may be reduced, and impedance matching may be performed through the power splitter.
  • the roll-to-roll process not only enables continuous processing of the flexible substrate at a low process cost, but also the roll-to-roll process to realize the vapor barrier film deposition technology for printed electronics, which is the most accessible in the market. By using the equipment, it is possible to realize low cost, high quality and high productivity.
  • a plurality of capacitively coupled electrodes for discharging the capacitively coupled plasma are linearly arranged in two rows in the transverse direction in the upper part of the chamber, so that 5G scale ( Not only scalability is possible, but also low temperature, high speed, and high density thin film deposition is possible.
  • the electrode body is formed in a square plate shape can greatly increase the number of gas injection holes formed on the lower surface has the advantage of improving the uniformity of the gas distribution.
  • a plurality of cooling blocks of water type are further installed on the plurality of capacitive coupling electrodes to control the overheating inside.
  • the capacitively coupled electrode assembly having a plurality of capacitively coupled electrodes arranged in two rows linearly on the upper side of the chamber can be applied to both the in-line method or the roll-to-roll method.
  • FIG. 1 is a view schematically showing a plasma processing apparatus according to a preferred embodiment of the present invention.
  • FIG. 2 illustrates the shape of the capacitive coupling electrode of FIG. 1.
  • FIG 3 illustrates a capacitively coupled electrode connected to a power splitter.
  • FIG. 4 is a diagram illustrating an electrode structure having a showerhead shape.
  • 5 through 7 are diagrams illustrating a power splitter.
  • FIG 8 is a view illustrating a state in which the length of the inner core and the secondary winding overlap with each other is varied.
  • FIG. 9 is a view schematically showing a plasma processing apparatus according to another embodiment of the present invention.
  • FIG. 10A and 10B are schematic perspective views of a chamber in which the capacitively coupled electrodes of FIG. 9 are arranged in two rows in a transverse direction.
  • FIG. 11 is a view showing the shape of the capacitive coupling electrode of the plasma processing apparatus according to another embodiment of the present invention.
  • FIG. 12 is a schematic cross-sectional view of a chamber in which the capacitive coupling electrode of FIG. 9 is arranged in a horizontal direction.
  • FIG. 13 is a schematic view of a plasma processing apparatus according to another preferred embodiment of the present invention.
  • FIG. 14 is a view schematically showing a plasma processing apparatus according to another preferred embodiment of the present invention.
  • FIG. 15 is a view schematically illustrating the structure of the process chamber of FIG. 14.
  • FIG. 1 is a view schematically showing a plasma processing apparatus according to an embodiment of the present invention
  • Figure 2 is a view showing the shape of the capacitive coupling electrode of FIG.
  • the plasma processing apparatus 100 includes a chamber 110, a capacitive coupling electrode assembly 120, a power splitter 130, and a substrate transfer unit 140.
  • the chamber 110 has a plasma discharge space formed therein, and is provided with a capacitively coupled electrode assembly 120 for generating capacitively coupled plasma and a substrate transfer part 140 for transferring the flexible substrate 141.
  • the chamber 110 is provided with a gas inlet through which a process gas is supplied from the outside of the chamber 110.
  • the chamber 110 is provided with a gas exhaust port connected to the exhaust pump 114 to perform the plasma process by maintaining the interior of the chamber 110 in a vacuum state, maintaining the atmospheric pressure state of the chamber 110 and performing the plasma process. It can also be done.
  • the chamber 110 may be made of a metal material such as aluminum, stainless steel, or copper. Or it may be made of coated metal, for example anodized aluminum or nickel plated aluminum. Alternatively, it may be made of refractory metal. Alternatively, it is possible to fabricate the chamber 110 in whole or in part from an electrically insulating material such as quartz or ceramic. As such, chamber 110 may be made of any material suitable for performing the intended plasma process.
  • the structure of the chamber 110 may have a structure suitable for uniform generation of plasma, for example, a circular structure or a square structure, and any other structure.
  • the flexible substrate 141 is a flexible substrate and includes various substrates for plasma processing.
  • the capacitively coupled electrode assembly 120 includes a plurality of capacitively coupled electrodes 121.
  • the capacitive coupling electrode 121 receives power from the power splitter 130 and discharges the capacitively coupled plasma into the chamber 110.
  • the capacitive coupling electrodes 121 are spaced apart from the cylindrical support rollers 142 supporting the flexible substrate 141 in the form of surface electrodes and are disposed along the circumferential direction of the support rollers 142.
  • the plurality of capacitive coupling electrodes 121 may be arranged in parallel to form a ceiling of the chamber 110 in the form of a surface electrode.
  • the capacitive coupling electrode 121 is disposed along the circumference of the support roller 142, thereby concentrating plasma discharged by the capacitive coupling electrode 121 around the support roller 142, thereby increasing the plasma processing efficiency of the flexible substrate 141. Can increase.
  • the arrangement of the plasma capacitive coupling electrode 121 may be arranged in various forms separately from the example illustrated in the drawings.
  • the power splitter 130 distributes and supplies the current induced to the plurality of capacitively coupled electrodes 121 of the capacitively coupled electrode assembly 120. At this time, the current distributed in the power splitter 130 is discharged out of phase by providing current to the neighboring capacitive coupling electrode 121 to maximize the discharge effect to discharge a uniform and large-area high density plasma.
  • the structure of the power splitter 130 and the current distribution method will be described in detail below.
  • the substrate transfer unit 140 transfers the flexible substrate 141 from the inside or the outside of the chamber 110 to the plasma discharge space in a roll-to-roll manner, and serves as a structure for supporting the flexible substrate 141 during the plasma processing.
  • the substrate transfer unit 140 is provided on both sides of the support roller 142 and the support roller 142 for supporting the flexible substrate 141, and the first and second guide rollers 146 and 148 for transferring the flexible substrate 141. It consists of.
  • the flexible substrate 141 supplied from the supply roll 144 is supported by the cylindrical support roller 142 and is plasma-processed by the capacitive coupling electrode assembly 120 to be wound up by the winding roll 149.
  • the support roller 142 is provided with a heater as a heating means for applying heat to the flexible substrate 141 can heat the flexible substrate 141.
  • the controller 150 controls the driving unit 152 that drives the driving mechanism for controlling the amount of current of the power splitter 130.
  • the controller 150 performs impedance matching by controlling the driver 152.
  • the flexible substrate 141 may be plasma-processed at a low cost in a roll-to-roll manner.
  • the plasma treatment process is stable and can minimize parasitic discharge.
  • FIG 3 illustrates a capacitively coupled electrode connected to a power splitter.
  • the power splitter 130 connected to the power supply 132 and receiving power distributes power to each of the plurality of capacitive coupling electrodes 121.
  • An insulator 123 is provided between the plurality of capacitive coupling electrodes 121.
  • the plurality of wires 162 connected in the power splitter 130 are connected to the plurality of capacitive coupling electrodes 121, respectively.
  • the number of wires 162 is provided to correspond to the number of capacitive coupling electrodes 121. Current induced in the wire 162 is supplied to the capacitive coupling electrode 121.
  • the power splitters 130 provide out-of-phase currents to neighboring capacitive coupling electrodes 121 connected to the plurality of wires 162.
  • FIG. 4 is a diagram illustrating an electrode structure of a shower head shape.
  • the capacitive coupling electrode 121 is formed in the shape of a shower head such that a process gas is supplied into the chamber 110 through the capacitive coupling electrode 121.
  • the process gas may be directly supplied with a gas injection hole formed in the chamber 110 or uniformly distributed through the capacitive coupling electrode 121 having a shower head shape and supplied into the chamber 110.
  • the capacitive coupling electrode 121 is formed in the electrode body 122, the gas supply path 126 formed in the electrode body 122, into which the process gas is injected, and a gas injection hole for injecting the process gas into the chamber 110 ( 124).
  • the gas supply path 126 is connected to the gas supply source 128 by a passage through which a process gas can be supplied into the electrode body 122.
  • the lower surface of the electrode body 122 is provided with a plurality of gas injection holes 124, the process gas supplied to the gas supply path 126 is supplied into the chamber 110 through the gas injection hole 124.
  • the gas supply passage 126 is formed of a conductive material and is connected to the power splitter 130 that supplies power to the electrode body 122.
  • the magnetic 129 is further provided on the capacitive coupling electrode 121.
  • One or more magnetics 129 may be installed on each capacitive coupling electrode 121, and may be installed to cover the entire or part of the upper portion of the capacitive coupling electrode 121.
  • a magnetic mounting member 127 having a shape in which one side is opened is installed on the upper portion of the capacitive coupling electrode 121 to fix the magnetic 129 in the open space. Since the electric force generated in the capacitive coupling electrode assembly 120 by the magnetic 129 is concentrated on the lower surface of the capacitive coupling electrode 121, that is, inside the chamber 110, the plasma discharge efficiency is increased.
  • 5 to 7 are diagrams illustrating a power splitter.
  • the power splitter 130 includes an impedance matching network that is in the shape of a stub tuner 131.
  • the impedance matching circuit may be provided by the stub tuner 131.
  • the output of the stub tuner 131 is connected to one section of the transmission line 132, and the impedance of the power supply 133 connected to the transmission line 132 is connected to the plurality of secondary windings 160. It is used to match the impedance of transmission line 132 with 121.
  • the controller 150 controls the power splitter 130 to match impedance through an impedance matching circuit. Although described with reference to exemplary installations of power splitters, they may be equally configured for use as signal couplers or power couplers / couplers.
  • the stub tuner 131 is composed of two stubs 131a and 131b.
  • the stub tuner 131 may include one or more individual stubs, each of which includes a sliding short to enable tuning of the stub homogenizer 131.
  • the output of the stub tuner 131 is connected to a transmission line 132 shorted at its distal end.
  • the transmission line 132 is provided by a coaxial cable having an inner core 134 and an outer shield 136 separated from the dielectric 138.
  • the inner core 134 is inserted into the outer shield 136.
  • the power source 133 is connected to the inner core 134 and the outer shield 136, and a dielectric 138 is included between the inner core 134 and the outer shield 136.
  • a plurality of secondary windings 160 are arranged coaxially around the inner core 134 and installed along the longitudinal direction of the inner core 134.
  • the secondary winding 160 forms a twisted pair of wires 162 that are available outside of the transmission line 132.
  • the end of the wire 162 is connected to the capacitive coupling electrode 121 for providing power.
  • the power is inductively coupled to the secondary windings 160 and supplied to each capacitive coupling electrode 121 connected to the secondary winding 160.
  • If two twisted pairs are provided in each twisted pair, they can be used to create a push pull pair, each end of each pushed pair being connected to neighboring capacitive coupling electrodes 121 Provides power that is out of phase.
  • a twisted pair configuration is used to provide differential outputs.
  • the number of secondary windings 160 is preferably selected corresponding to the number of capacitive coupling electrodes 121 that need to be supplied with power.
  • the winding 300 on which the secondary winding 160 is wound is made of Teflon or some other suitable material and provides a template where the secondary windings 160 can be located. do.
  • Secondary windings 160 are provided in the winding 300 prior to insertion into the transmission line 132. Shows pairs of wires 162 exiting transmission line 132 through holes 303 in conducting plate or flange 305 that act as short circuits for transmission line 132.
  • a plurality of second windings 160 may be provided in a circumferential arrangement around the inner core 134. The second windings 160 are provided inside the winding 300 and run through openings 405 and 410 both radially distal and proximate to the central point, respectively.
  • the second windings 160 can then exit through the shorted end-plate or flange 305. Since the current distribution in the transmission line 132 is uniform in theta direction (the current is in the short direction on the center conductor and the current flows away from the short on the outer conductor at one particular pointer in the RF phase), the azimuth is The magnetic field is uniform in strength.
  • each of the plurality of capacitive coupling electrodes 121 provides a wideband coupler in an environment of a plasma source to which divided power is supplied.
  • each of the individual secondary windings 160 independently couples the power from the magnetic field generated by the transmission line 132, the characteristics of the output signal generated from each of the windings can be changed independently of the characteristics of the other windings.
  • FIG 8 is a view illustrating a state in which the length of the inner core and the secondary winding overlap with each other is varied.
  • the lengths L1, L2, L3, where the inner core 134 and the secondary winding 160 overlap may be varied to optimize the desired amount of power induced by each of the secondary windings 160.
  • the length L1 of the inner core 134 and the secondary winding 160 overlapping with each other may be adjusted.
  • the overlapping length (L2) by moving the inner core 134 by driving the drive mechanism using the drive
  • the overlapping length (L3) by moving the outer shield 136 by driving the drive mechanism using the drive unit 152
  • the lengths L1, L2, and L3 of the inner core 134 and the secondary winding 160 overlap with each other to control the power provided to the capacitive coupling electrode 121 by varying by driving the driving mechanism using the driving unit 152.
  • FIG. 9 is a view schematically showing a plasma processing apparatus according to another embodiment of the present invention
  • FIGS. 10A and 10B are schematic views of a chamber in which the capacitive coupling electrodes of FIG. 9 are arranged in two rows in a horizontal direction. Perspective views.
  • the plasma processing apparatus 200 includes a chamber 210 and a plurality of capacitively coupled electrodes arranged in two rows in a horizontal direction on the chamber 210.
  • the capacitive coupling electrode assembly 220, the power splitter 230, and the substrate transfer unit 240 are formed.
  • the chamber 210 includes a capacitively coupled electrode assembly 220 having a plasma discharge space formed therein and having a plurality of capacitively coupled electrodes 221 linearly arranged in two rows in a horizontal direction to generate a capacitively coupled plasma; And a substrate transfer part 240 for transferring the substrate 241.
  • the chamber 210 is provided with a gas inlet through which a process gas is supplied from the outside of the chamber 210.
  • the chamber 210 is provided with a gas exhaust port connected to the exhaust pump 214 to perform the plasma process by maintaining the inside of the chamber 210 in a vacuum state, maintaining the atmospheric pressure state inside the chamber 210 and performing the plasma process. It can also be done.
  • the chamber 210 may be made of a metal material such as aluminum, stainless steel, or copper. Or it may be made of coated metal, for example anodized aluminum or nickel plated aluminum. Alternatively, it may be made of refractory metal. Alternatively, it is possible to fabricate the chamber 210 in whole or in part from an electrically insulating material such as quartz or ceramic. As such, chamber 210 may be made of any material suitable for performing the intended plasma process.
  • the structure of the chamber 210 may have a structure suitable for uniform generation of plasma, for example, a circular structure or a square structure, and any other structure.
  • the substrate 241 may include various substrates for plasma processing.
  • the capacitively coupled electrode assembly 220 includes a plurality of capacitively coupled electrodes 221 linearly arranged in two rows in the transverse direction in the process space of the chamber 210.
  • the capacitive coupling electrode 221 receives power from the power splitter 130 and discharges the capacitively coupled plasma into the chamber 210.
  • the capacitively coupled electrode assembly 220 includes a total of 20 capacitively coupled electrodes 221 linearly arranged in two rows in the transverse direction on the top of the chamber 210. This allows for scalability beyond the 5G scale.
  • the plurality of capacitive coupling electrodes 221 are spaced apart from the plurality of cylindrical support rollers 244 supporting the substrate 241 in the form of surface electrodes.
  • the plurality of capacitively coupled electrodes 221 linearly arranged in two rows are disposed above the substrate 241 supported on the plurality of support rollers 244, so that the plasma discharged by the respective capacitively coupled electrodes 221 is transferred onto the substrate.
  • the plasma processing efficiency of the substrate 241 can be improved.
  • an insulator 228 may be provided between the plurality of capacitive coupling electrodes 221.
  • the power splitter 230 distributes and supplies current induced to the plurality of capacitively coupled electrodes 221 of the capacitively coupled electrode assembly 220. At this time, the current distributed in the power splitter 230 maximizes the discharge effect by providing out-of-phase currents to the neighboring capacitive coupling electrodes 221 to discharge a uniform and large-area high density plasma.
  • the substrate transfer unit 240 transfers the substrate 241 to the plasma discharge space in or out of the chamber 210 in an inline manner, and serves as a structure for supporting the substrate 241 during plasma processing.
  • the support roller 244 may be provided with a heater as a heating means for applying heat to the substrate 241 to heat the substrate 241.
  • the controller 250 controls the driver 252 for driving the driving mechanism for controlling the amount of current of the power splitter 230.
  • the controller 250 performs impedance matching by controlling the driver 252.
  • the controller 250 and the driver 252 control each of the plurality of power splitters 230.
  • FIG 11 is a view showing the shape of the capacitively coupled electrode of the plasma processing apparatus according to another embodiment of the present invention
  • Figure 12 is a schematic cross-sectional view of a chamber showing a state in which the capacitively coupled electrode of Figure 9 is arranged in a horizontal direction. .
  • the capacitive coupling electrode 221 applied to the plasma processing apparatus 200 includes an electrode body 222 having a substantially square plate shape in a shower head shape; A gas supply path is formed in the upper center of the electrode body 222 in a vertical direction to inject a process gas and is connected to a power splitter 230 that is formed of a conductive material and supplies power to the electrode body 222. 223; And a plurality of gas injection holes 224 provided on the bottom surface of the electrode body 222 to inject a process gas into the chamber 210.
  • the gas injection port 225 is formed integrally or separately on the upper end of the pipe-shaped gas supply path 223 to receive a process gas through a gas supply source (not shown).
  • a water-cooled cooling block 226 is further installed on the pipe-shaped gas supply path 223 to effectively control overheating therein.
  • a vacuum unit 227 sealed to a predetermined size is installed along the upper circumference of the electrode body 222 on the square plate to remove the plasma, thereby preventing the generation of plasma outside the source space while increasing the power density. Increase it.
  • the electrode body 222 is formed in a square plate shape can greatly increase the number of gas injection holes 224 formed on the lower surface can improve the uniformity of the gas distribution.
  • the electrode body 222 on the square plate is to reduce the amount of cutting of the edge portion of the square shower head and the rear side in contact with the gas shower holes in the range that does not block the gas injection hole, and at the same time to increase the surface area in the form of a padding. It is desirable to maximize the thermal conductivity of the electrode.
  • the gas supply path 223 is connected to a gas supply source (not shown) through a passage through which process gas can be supplied into the electrode body 222.
  • the process gas supplied to the gas supply path 223 through the plurality of gas injection holes 224 on the lower surface of the electrode body 222 is supplied into the chamber 210.
  • the gas supply path 223 is formed of a conductive material and is connected to the power splitter 230 that supplies power to the electrode body 222.
  • FIG. 13 is a schematic view of a plasma processing apparatus according to another preferred embodiment of the present invention.
  • the transfer method of the substrate to be processed in the plasma region is different in that it uses a roll-to-roll method that is transferred in a curved form rather than an in-line method as shown in FIG.
  • the plasma processing apparatus 300 is the power splitter 330 and the controller 350 is the same as the embodiment of Figure 9, other components are roll-to-roll For the roll to roll chamber 310, a roll-to-roll capacitive coupling electrode assembly 320, and a roll-to-roll substrate transfer unit 340.
  • the roll-to-roll chamber 310 has a plasma discharge space therein, and a roll-to-roll substrate transfer part 340 for transferring the roll-to-roll capacitively coupled electrode assembly 320 and the flexible substrate 341 to generate the capacitively coupled plasma.
  • a process gas supplied from the outside of the chamber 310.
  • the chamber 310 is provided with a gas exhaust port connected to the exhaust pump 314 to maintain the interior of the chamber 310 in a vacuum state to perform a plasma process.
  • the flexible substrate 341 is a flexible substrate for a roll-to-roll method, and includes various substrates for plasma processing.
  • the capacitive coupling electrode assembly 320 includes a plurality of capacitive coupling electrodes 321.
  • the capacitive coupling electrode 321 receives power from the power splitter 330 and discharges the capacitively coupled plasma into the chamber 310.
  • the plurality of capacitive coupling electrodes 321 are spaced apart from the cylindrical support roller 342 supporting the flexible substrate 341 in the form of a surface electrode, and are disposed along the circumferential direction of the support roller 342.
  • the capacitive coupling electrode 321 is disposed along the circumference of the support roller 342 so that the plasma discharged by the capacitive coupling electrode 321 is concentrated around the support roller 342 so that the plasma processing efficiency of the flexible substrate 341 is improved. Can increase.
  • the power splitter 230 distributes and supplies current induced to the plurality of capacitively coupled electrodes 321 of the capacitively coupled electrode assembly 320.
  • the substrate transfer part 340 transfers the flexible substrate 341 from the inside or the outside of the chamber 310 to the plasma discharge space in a roll-to-roll manner, and serves as a structure for supporting the flexible substrate 341 during plasma processing.
  • the substrate transfer part 340 is provided on both sides of the support roller 342 and the support roller 342 for supporting the flexible substrate 341 and the first and second guide rollers 346 and 348 for conveying the flexible substrate 341. It consists of.
  • the flexible substrate 341 supplied from the supply roll 344 is supported by the cylindrical support roller 342 and is plasma-processed by the capacitive coupling electrode assembly 320 to be wound up by the winding roll 349.
  • the support roller 342 is provided with a heater as a heating means for applying heat to the flexible substrate 341 to heat the flexible substrate 341.
  • the controller 250 controls the driver 252 for driving the driving mechanism for controlling the amount of current of the power splitter 230.
  • the controller 250 performs impedance matching by controlling the driver 252.
  • the plasma processing apparatus 300 also includes a capacitively coupled electrode assembly 320 having a plurality of capacitively coupled electrodes 321 arranged in two rows in a lateral direction.
  • the capacitive coupling electrode assembly 320 itself is basically the same structure as that of FIG. 9 except that the capacitively coupled electrode assembly 320 is actually curved to be applied to the roll-to-roll method.
  • a curved insulator 323 is provided between the plurality of capacitive coupling electrodes 321.
  • FIG. 14 is a view schematically showing a plasma processing apparatus according to another preferred embodiment of the present invention
  • FIG. 15 is a view schematically showing the structure of the process chamber of FIG.
  • the plasma processing apparatus 400 is connected in an inline manner and includes a loading chamber 480, first, second and third process chambers 410a, 410b and 410c and an unloading chamber 490. It consists of.
  • the loading chamber 480 receives the substrate 441 from the loader 485 and loads the substrate 441 for plasma processing into the process chambers 410a, 410b, and 410c.
  • the loading chamber 480 is provided with a substrate transfer robot (not shown) to move the substrate 441.
  • the plasma processing apparatus 400 may include a substrate transfer roller 444 for supporting and transferring the substrate 441 in each chamber, and may further include a substrate transfer robot for transferring the substrate. have.
  • a conveyor belt may be used as a transfer means for supporting the substrate 441 and moving the substrate between the chambers to continuously perform the operation.
  • the substrate 441 is supplied to a plurality of process chambers 410a, 410b, and 410c connected to the loading chamber 480.
  • the plurality of process chambers 410a, 410b, and 410c are connected to the loading chamber 480 inline as a chamber for plasma processing.
  • Each of the plurality of process chambers 410a, 410b, and 410c is provided with a capacitively coupled electrode assembly 420 for discharging the capacitively coupled plasma into each chamber.
  • the capacitively coupled electrode assembly 420 includes a plurality of capacitively coupled electrodes 421, and a plurality of capacitively coupled electrodes 421 are disposed on the process chamber 100 in parallel to discharge the plasma capacitively coupled into the chamber. .
  • An insulator 423 is provided between the capacitive coupling electrodes 421.
  • the plurality of capacitive coupling electrodes 421 are arranged in parallel to be spaced apart from the substrate 441 being moved in the form of a surface electrode.
  • the capacitive coupling electrode 421 may be arranged in various forms separately from the example illustrated in the drawings.
  • Each of the plurality of process chambers 410a, 410b, and 410c is provided with a capacitively coupled electrode assembly 420, and each of the capacitively coupled electrode assemblies 420 is connected to a plurality of power splitters 430, respectively, to induce induced power distribution. Supplied.
  • the unloading chamber 490 is connected inline with the plurality of process chambers 410a, 410b, and 410c to unload the plasma treated substrate to the unloader 495 while passing through the plurality of process chambers 410.
  • the unloading chamber 490 is provided with a substrate transfer robot (not shown) for moving the substrate 441.
  • the loading chamber 480, the plurality of process chambers 410a, 410b, and 410c and the unloading chamber 490 are connected inline to continuously process and process the substrate 441.
  • the gate 446 is provided between the chambers to allow the substrate 441 to enter and exit, and the gate 446 may further include a substrate transfer robot for transferring the substrate 441.
  • the controller 450 controls the driver 452 driving the driving mechanism for controlling the amount of current of the power splitter 430.
  • the controller 450 performs impedance matching by controlling the driver 452.
  • the controller 450 and the driver 452 control each of the plurality of power splitters 430.
  • the process chambers 410a, 410b, and 410c have a capacitively coupled electrode assembly 420 having a plurality of capacitively coupled electrodes 421 disposed in parallel in the form of surface electrodes.
  • an insulator 423 is provided between the plurality of capacitive coupling electrodes 421.
  • the substrate 441 is plasma-processed while sequentially moving the process chambers 410a, 410b, and 410c horizontally.
  • the plurality of capacitive coupling electrodes 421 included in the capacitively coupled electrode assembly 420 are connected to one power splitter 430 and are driven by receiving power distributed from the power splitter 430. Therefore, a current is uniformly supplied to the plurality of capacitively coupled electrodes 421 of the process chamber 410 to achieve a uniform plasma discharge of a large area.
  • the power splitter 430 distributes and supplies current induced to the plurality of capacitively coupled electrodes 421 of the capacitively coupled electrode assembly 420. At this time, as described above, the current distributed in the power splitter 430 provides out-of-phase currents to neighboring capacitive coupling electrodes 421 to maximize the discharge effect to generate a high-density plasma discharge. .
  • the high-density uniform plasma may be discharged by supplying the induced phase of the anti-phase induced current through the power splitter 430 to the capacitive coupling electrode assembly 420.
  • the discharge efficiency of the process gas is increased to prevent the formation of unnecessary particles.
  • the power splitter 430 connected to the power supply 433 and receiving power distributes power to each of the plurality of capacitive coupling electrodes 421.
  • a plurality of wires (not shown) connected by the power splitter 430 are respectively connected to the plurality of capacitive coupling electrodes 421.
  • the wires provide out-of-phase currents to neighboring capacitive coupling electrodes 421.
  • the illustrated example shows an example in which a plurality of process chambers 410a, 410b, and 410c are connected to the power splitter 430, respectively, but a plurality of capacitively coupled electrodes provided in the plurality of process chambers 410a, 410b, and 410c.
  • the assembly 120 may be supplied with power induced through one power splitter 130. That is, the plurality of capacitively coupled electrodes 421 constituting the plurality of capacitively coupled electrode assemblies 420 may be supplied with power through one power splitter 430.
  • the power splitter can be used to distribute the current to discharge the plasma in a large area, and the process stability can be extended beyond 5G scale without generating interference in the deposition process.
  • Excellent high density thin film deposition can be usefully applied to a variety of plasma processing apparatus or system, such as a plasma processing apparatus for a roll-to-roll process, an in-line plasma processing apparatus, and a linear array plasma processing apparatus.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)

Abstract

La présente invention concerne un appareil de traitement par plasma, et plus précisément un appareil de traitement par plasma pour un processus de rouleau à rouleau, pour distribuer un courant à l'aide d'un diviseur de puissance dans un processus rouleau à rouleau, ce qui permet une décharge de plasma sur une grande surface ; un appareil de traitement par plasma en ligne utilisant un diviseur de puissance, pour distribuer un courant à l'aide du diviseur de puissance dans un système en ligne, ce qui permet de décharger le courant ; et un appareil de traitement par plasma permettant une extensibilité supérieure ou égale à l'échelle 5G sans apparition d'interférence dans un processus de dépôt, et permettant également un dépôt de couches minces à haute densité tout en présentant une excellente stabilité de traitement.
PCT/KR2015/014392 2014-12-31 2015-12-29 Appareil de traitement par plasma WO2016108568A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2014-0194870 2014-12-31
KR10-2014-0194862 2014-12-31
KR1020140194870A KR101577272B1 (ko) 2014-12-31 2014-12-31 롤투롤 공정을 위한 플라즈마 처리장치
KR1020140194862A KR101633652B1 (ko) 2014-12-31 2014-12-31 전력 스플리터를 이용한 인라인 기판처리 시스템
KR1020150175675A KR101775361B1 (ko) 2015-12-10 2015-12-10 플라즈마 처리장치
KR10-2015-0175675 2015-12-10

Publications (1)

Publication Number Publication Date
WO2016108568A1 true WO2016108568A1 (fr) 2016-07-07

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PCT/KR2015/014392 WO2016108568A1 (fr) 2014-12-31 2015-12-29 Appareil de traitement par plasma

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WO (1) WO2016108568A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113658843A (zh) * 2020-05-12 2021-11-16 细美事有限公司 基板处理装置
TWI788390B (zh) * 2017-08-10 2023-01-01 美商應用材料股份有限公司 用於電漿處理的分佈式電極陣列

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030079983A1 (en) * 2000-02-25 2003-05-01 Maolin Long Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources
JP2007221149A (ja) * 2007-02-26 2007-08-30 Canon Anelva Corp プラズマ処理方法および半導体デバイスの製造方法
KR20100129370A (ko) * 2009-05-31 2010-12-09 위순임 대면적 플라즈마를 이용한 연속 기판 처리 시스템
KR20110025738A (ko) * 2008-04-04 2011-03-11 더블린 시티 유니버시티 전력 스플리터
JP2011195873A (ja) * 2010-03-18 2011-10-06 Fujifilm Corp 成膜装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030079983A1 (en) * 2000-02-25 2003-05-01 Maolin Long Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources
JP2007221149A (ja) * 2007-02-26 2007-08-30 Canon Anelva Corp プラズマ処理方法および半導体デバイスの製造方法
KR20110025738A (ko) * 2008-04-04 2011-03-11 더블린 시티 유니버시티 전력 스플리터
KR20100129370A (ko) * 2009-05-31 2010-12-09 위순임 대면적 플라즈마를 이용한 연속 기판 처리 시스템
JP2011195873A (ja) * 2010-03-18 2011-10-06 Fujifilm Corp 成膜装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI788390B (zh) * 2017-08-10 2023-01-01 美商應用材料股份有限公司 用於電漿處理的分佈式電極陣列
CN113658843A (zh) * 2020-05-12 2021-11-16 细美事有限公司 基板处理装置

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