WO2013058454A1 - Appareil de traitement de substrat - Google Patents

Appareil de traitement de substrat Download PDF

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Publication number
WO2013058454A1
WO2013058454A1 PCT/KR2012/003339 KR2012003339W WO2013058454A1 WO 2013058454 A1 WO2013058454 A1 WO 2013058454A1 KR 2012003339 W KR2012003339 W KR 2012003339W WO 2013058454 A1 WO2013058454 A1 WO 2013058454A1
Authority
WO
WIPO (PCT)
Prior art keywords
main body
gas
end side
substrate
gas supply
Prior art date
Application number
PCT/KR2012/003339
Other languages
English (en)
Korean (ko)
Inventor
박경완
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to CN201280051208.5A priority Critical patent/CN103890642A/zh
Publication of WO2013058454A1 publication Critical patent/WO2013058454A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Definitions

  • the present invention relates to a substrate processing apparatus capable of uniformly distributing an atmospheric gas.
  • Substrate processing apparatuses are used in the manufacture of flat panel displays, and are roughly classified into vapor deposition apparatuses and annealing apparatuses.
  • the deposition apparatus is a device for forming a transparent conductive layer, an insulating layer, a metal layer, or a silicon layer, which constitute the core of a flat panel display, and is a chemical vapor deposition such as low pressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD). Devices and physical vapor deposition devices such as sputtering.
  • LPCVD low pressure chemical vapor deposition
  • PECVD plasma-enhanced chemical vapor deposition
  • the annealing device is a device for improving the properties of the deposited film after depositing a film on the substrate, and is a heat treatment device for crystallizing or phase changing the deposited film.
  • Heat treatment apparatuses are roughly classified into a single substrate type for heat treating one substrate and a batch type for heat treating a plurality of substrates, and a batch substrate processing apparatus is frequently used for mass production.
  • the substrate processing apparatus includes a main body having a chamber, which is a space in which a substrate is processed, a plurality of heaters installed inside the main body and generating heat required for processing the substrate, Ar, N 2 , And a gas supply pipe for supplying an atmosphere gas such as H 2 , and a gas discharge pipe for discharging the atmosphere gas to the outside.
  • an inlet pipe through which atmospheric gas is introduced and a discharge pipe through which atmospheric gas are discharged are respectively provided on one side and the other side of the main body which face each other, and the atmosphere gas is introduced into one side of the main body to the other side. Discharge it. That is, the atmospheric gas introduced into one inner side of the main body flows to the other inner side of the main body and is discharged to the outside of the main body through the other side of the main body.
  • the present invention has been made to solve the problems of the prior art as described above, the object of the present invention is to uniformly distribute the atmosphere gas for each part of the interior of the main body, thereby uniformizing the temperature inside the main body of the substrate treatment process It is to provide a substrate processing apparatus that can improve the reliability.
  • a substrate processing apparatus including a main body having a chamber formed therein and a front door having an entrance through which the substrate enters and exits; A plurality of heaters installed inside the main body and generating heat for processing the substrate; A plurality of gas supply pipes installed inside the main body and having a plurality of discharge holes formed therein, and supplying an atmosphere gas for processing the substrate into the main body; A plurality of suction holes are formed in the main body, and a plurality of suction holes are formed, respectively, and include a plurality of gas discharge pipes that suck and discharge the atmosphere gas introduced into the main body.
  • the atmosphere gas is uniformly supplied to the inside of the main body through the discharge hole of the gas supply pipe installed in the main body, and the atmospheric gas is supplied to the inside of the main body through the suction hole of the gas discharge pipe installed in the main body. It is discharged to the outside through the whole area. Then, since the atmosphere gas is uniformly distributed for each part inside the main body, the temperature inside the main body is uniform for each part. Therefore, there is an effect of improving the reliability of the substrate processing process.
  • FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention.
  • Figure 2 is a perspective view of the gas supply pipe and the gas discharge pipe shown in FIG.
  • FIG. 3 is a bottom perspective view of FIG. 2;
  • FIG. 4 is a right side view of FIG. 1;
  • FIG. 5 is a right side view of a substrate processing apparatus according to another embodiment of the present invention.
  • the treatment of the substrate includes processes for heating and cooling the substrate, all processes for depositing a predetermined film on the substrate, and all heat treatment processes for annealing, crystallizing, or phase changing the film deposited on the substrate.
  • the material of the substrate is not particularly limited and may be formed of a material such as glass, plastic, polymer, silicon wafer or stainless steel.
  • FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention.
  • the substrate processing apparatus includes a main body 110 forming an appearance.
  • the main body 110 is formed in a substantially rectangular parallelepiped shape, and a chamber, which is an enclosed space in which the substrate 50 is processed, is formed therein.
  • the main body 110 may be formed in various shapes according to the shape of the substrate 50 as well as the rectangular parallelepiped shape.
  • An entrance 113 through which the substrate 50 enters and exits is formed on a front surface of the main body 110, and the entrance and exit 113 is opened and closed by a door 115 installed on the front surface of the main body 110.
  • the substrate 50 is loaded by the arm (not shown) of the robot and the like to load the substrate 50 into the chamber.
  • the substrate 50 is processed while the door 115 is closed to close the chamber.
  • An open part (not shown) may be formed on an upper surface of the main body 110, and the open part is opened and closed by a cover 117. Parts necessary for the processing of the substrate 50 are installed inside the main body 110. When repairing or replacing the parts, the cover 117 is opened to communicate the chamber with the outside.
  • the components necessary for processing the substrate 50 include a heater 120, a gas supply pipe 130, a gas discharge pipe 140, and the like.
  • the heater 120 generates heat for processing the substrate 50.
  • the heater 120 is formed in a bar shape and is installed inside the main body 120, and is installed while being parallel with the left and right directions and the front and rear directions of the main body 110, respectively.
  • the heater 121 which is parallel to the left and right direction of the main body 110, the left end side and the right end side is supported on the left side and the right side of the main body 110, respectively, the front side, the rear side, the upper surface side and It is installed in the lower surface side, respectively.
  • the substrate 50 may be mounted and supported directly on the heater 121, may be mounted and supported on a support pin (not shown) formed on the heater 121, and a separate support member (not shown) installed inside the main body 110. C) or a support bar (not shown).
  • the gas supply pipe 130 supplies atmospheric gases such as Ar, N 2 , and H 2 to the inside of the main body 110, and the gas discharge pipe 140 discharges the atmospheric gas to the outside of the main body 110.
  • the atmosphere gas controls the temperature inside the main body 110 while creating an atmosphere necessary for processing the substrate 50.
  • FIGS. 1 to 4. 2 is a perspective view of the gas supply pipe and the gas discharge pipe shown in Figure 1
  • Figure 3 is a bottom perspective view of Figure 2
  • Figure 4 is a right side view of FIG.
  • the gas supply pipe 130 is located on the left side outside the left side of the main body 110 and the right end side passes through the left side of the main body 110 is supported on the right side, the inside of the main body 110 Is installed.
  • the gas supply pipe 130 is installed inside the space formed by the heater 121 in parallel with the heater 121 that is parallel to the left and right directions of the main body 110.
  • the gas supply pipe 130 is installed with equal intervals in the vertical direction of the main body 110 and at the same time in the front and rear directions of the main body 110.
  • Each of the gas supply pipes 130 is formed with a plurality of discharge holes 131 for discharging the atmosphere gas into the body 110, and the discharge holes 131 are directed downward.
  • the left end of the gas supply pipe 130 exposed to the outside of the left side of the main body 110 is preferably communicated with each other to receive the atmospheric gas through a single pipe 133.
  • the pipeline 133 of the gas supply pipe 130 communicates with a compression tank (not shown) in which the atmosphere gas is stored.
  • the gas discharge pipe 140 is located at the right end side outside the right side of the main body 110 and the left end side passes through the right side of the main body 110 and is supported on the left side, and is installed inside the main body 110.
  • the gas discharge pipe 140 is installed inside the space formed by the heater 121 in parallel with the heater 121 that is parallel to the left and right directions of the main body 110.
  • the gas discharge pipe 140 is installed with equal intervals in the vertical direction of the main body 110 and at the same time with equal intervals in the front and rear directions of the main body 110.
  • Each gas discharge pipe 140 is formed with a plurality of suction holes 141 for sucking the atmosphere gas introduced into the main body 110, the suction hole 141 is preferably directed upward.
  • the right end side of the gas discharge pipe 140 exposed to the outside of the right side of the main body 110 is communicated with each other, it is preferable to discharge the atmosphere gas through one pipe 143.
  • the pipeline 143 of the gas discharge pipe 140 is in communication with the vacuum pump (not shown) side.
  • the diameter of the suction hole 141 may be larger than the diameter of the discharge hole 131. Since the diameter of the suction hole 141 is larger than the diameter of the discharge hole 131, the diameter of the gas discharge pipe 140 is preferably larger than the diameter of the gas supply pipe 130.
  • the diameters of the discharge holes 131 and the diameters of the suction holes 141 may be uniform, respectively, or may be nonuniform, respectively, depending on the processing conditions of the substrate 50, and the like.
  • a heater 125 may be further installed between the gas supply pipes 130 or between the gas discharge pipes 140.
  • the heater 125 is installed in the same manner as the heater 121 and forms parallel to the left and right directions of the main body 110.
  • the gap between the main body 110 and the heater 120, the gap between the main body 110 and the gas supply pipe 130, and the gap between the main body 110 and the gas discharge pipe 140 are sealed.
  • the atmospheric gas is uniformly supplied into the main body 110 through the discharge hole 131 of the gas supply pipe 130 installed inside the main body 110, and Atmospheric gas is discharged to the outside through the entire inner portion of the body 110 through the suction hole 141 of the gas discharge pipe 140 installed therein. Then, since the atmosphere gas is uniformly distributed for each part of the main body 110, the temperature inside the main body 110 is maintained uniformly.
  • FIG. 5 is a right side view of the substrate processing apparatus according to another embodiment of the present invention, and describes only differences from FIG. 4.
  • each of the gas supply pipe 230 and the gas discharge pipe 240 may be installed with an uneven interval in the front and rear directions of the main body 210 and at the same time with an uneven interval in the vertical direction of the main body 210. have.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un appareil de traitement de substrat. Dans l'appareil de traitement de substrat selon la présente invention, un gaz ambiant est fourni de manière uniforme dans un corps principal à travers un orifice de décharge d'un tuyau d'alimentation en gaz installé dans le corps principal et le gaz ambiant est déchargé vers l'extérieur à travers un orifice d'admission d'un tuyau de décharge gazeuse installé dans le corps principal et à travers l'ensemble des parties internes du corps principal. Ainsi, le gaz ambiant est réparti uniformément vers chaque partie à l'intérieur du corps principal et la température à l'intérieur du corps principal est uniforme sur l'ensemble des parties. En conséquence, l'efficacité et la fiabilité de traitement du substrat sont améliorées.
PCT/KR2012/003339 2011-10-18 2012-04-30 Appareil de traitement de substrat WO2013058454A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201280051208.5A CN103890642A (zh) 2011-10-18 2012-04-30 基板处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0106297 2011-10-18
KR1020110106297A KR101284084B1 (ko) 2011-10-18 2011-10-18 기판 처리 장치

Publications (1)

Publication Number Publication Date
WO2013058454A1 true WO2013058454A1 (fr) 2013-04-25

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Application Number Title Priority Date Filing Date
PCT/KR2012/003339 WO2013058454A1 (fr) 2011-10-18 2012-04-30 Appareil de traitement de substrat

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KR (1) KR101284084B1 (fr)
CN (1) CN103890642A (fr)
WO (1) WO2013058454A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101661178B1 (ko) * 2014-11-18 2016-10-04 주식회사 테라세미콘 기판 프로세싱 장치
KR102630347B1 (ko) * 2018-12-17 2024-01-30 주식회사 원익아이피에스 기판 처리 장치
CN111326447B (zh) * 2018-12-17 2023-08-04 圆益Ips股份有限公司 基板处理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100008722A (ko) * 2008-07-16 2010-01-26 주식회사 테라세미콘 배치식 열처리 장치
KR20100128854A (ko) * 2009-05-29 2010-12-08 주식회사 테라세미콘 배치식 기판 처리 장치
KR20110066864A (ko) * 2009-12-11 2011-06-17 도쿄엘렉트론가부시키가이샤 기판처리장치, 기판처리방법 및 이 기판처리방법을 실행시키기 위한 프로그램을 기록한 기록매체
KR20110103630A (ko) * 2010-03-15 2011-09-21 주식회사 티지솔라 배치식 에피택셜층 형성장치 및 그 형성방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100008722A (ko) * 2008-07-16 2010-01-26 주식회사 테라세미콘 배치식 열처리 장치
KR20100128854A (ko) * 2009-05-29 2010-12-08 주식회사 테라세미콘 배치식 기판 처리 장치
KR20110066864A (ko) * 2009-12-11 2011-06-17 도쿄엘렉트론가부시키가이샤 기판처리장치, 기판처리방법 및 이 기판처리방법을 실행시키기 위한 프로그램을 기록한 기록매체
KR20110103630A (ko) * 2010-03-15 2011-09-21 주식회사 티지솔라 배치식 에피택셜층 형성장치 및 그 형성방법

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Publication number Publication date
CN103890642A (zh) 2014-06-25
KR20130042157A (ko) 2013-04-26
KR101284084B1 (ko) 2013-07-10

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