WO2012030033A1 - Appareil d'alimentation en gaz dans un grand système de traitement de substrat - Google Patents

Appareil d'alimentation en gaz dans un grand système de traitement de substrat Download PDF

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Publication number
WO2012030033A1
WO2012030033A1 PCT/KR2011/001320 KR2011001320W WO2012030033A1 WO 2012030033 A1 WO2012030033 A1 WO 2012030033A1 KR 2011001320 W KR2011001320 W KR 2011001320W WO 2012030033 A1 WO2012030033 A1 WO 2012030033A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
injection tube
gas injection
processing system
nozzle
Prior art date
Application number
PCT/KR2011/001320
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English (en)
Korean (ko)
Inventor
김상문
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Publication of WO2012030033A1 publication Critical patent/WO2012030033A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • the present invention relates to a gas supply apparatus of a large area substrate processing system, and more particularly, to a gas supply apparatus of a large area substrate processing system for injecting gas evenly onto a large area substrate.
  • the deposition apparatus is a device that is responsible for forming a transparent conductive layer, an insulating layer, a metal layer, or a silicon layer, which form a core component of a flat panel display, such as low pressure chemical vapor deposition (LPCVD) or plasma enhanced chemical vapor deposition (PECVD).
  • LPCVD low pressure chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • There are physical vapor deposition devices such as chemical vapor deposition devices and sputtering.
  • the heat treatment apparatus is a device that is responsible for the annealing step that follows the deposition process.
  • a typical deposition apparatus is an amorphous silicon deposition apparatus of a thin film transistor (TFT), and a typical heat treatment apparatus is an apparatus for crystallizing amorphous silicon into polysilicon.
  • TFT thin film transistor
  • Such a vapor deposition apparatus or heat treatment apparatus requires a gas supply apparatus.
  • the deposition apparatus is essentially provided with a device capable of supplying a source gas (for example, SiH4, PH3, B2H6 gas, etc. required for forming amorphous silicon) required for the formation of a transparent conductive layer, an insulating layer, a metal layer, or a silicon layer. do.
  • a source gas for example, SiH4, PH3, B2H6 gas, etc. required for forming amorphous silicon
  • an atmosphere gas for example, Ar, N2, H2 gas, etc. required for crystallization of amorphous silicon
  • substrate processing systems have also become large enough to accommodate a plurality of large area substrates (for example, glass or quartz substrates) for flat panel displays.
  • large area substrates for example, glass or quartz substrates
  • the role of the device for supplying the reaction gas and the atmosphere gas required for substrate processing in the system has become important. That is, when the reaction gas and the atmosphere gas are smoothly and uniformly supplied into the large area substrate processing system by the gas supply device, characteristics of the composition, thickness, film quality, etc. of the film deposited and heat-treated over the plurality of large area substrates are constant. Can be maintained.
  • the present invention has been made to solve the above-mentioned problems of the prior art, and provides a gas supply apparatus of a large-area substrate processing system capable of uniformly securing the temperature of each of a plurality of substrates loaded in a large-area substrate processing system. It aims to do it.
  • any part of the substrate is cooled by the gas by flowing the gas flowing out of the nozzle of the gas injection tube in various directions on the side of the substrate.
  • substrate uniformly can be acquired.
  • FIG. 1 is a front view of a gas supply apparatus of a large-area substrate processing system according to an embodiment of the present invention.
  • FIG. 2 is a plan view of FIG. 1.
  • FIG. 3 is a cross-sectional view of a second gas injection tube installed in the first gas injection tube of FIG. 2.
  • FIG. 4 is a flow diagram of gas for the curved panel of FIG. 1.
  • FIG. 4 is a flow diagram of gas for the curved panel of FIG. 1.
  • the gas supply device of the large-area substrate processing system for achieving the above object is a gas supply device which is installed in the gas supply manifold of the large-area substrate processing system to supply gas to the substrate, the gas is discharged A first gas injection tube 100 having a plurality of first nozzles 101; And a shade 110 installed to rotate outside the first gas injection tube 100 to allow the gas flowing out of the first nozzle 101 to flow in various directions with respect to the substrate side.
  • the shade 110 is installed along the first gas injection tube 100 at an outer side of the first gas injection tube 100 to rotate around the first gas injection tube 100. It may include.
  • the curved panel 117 may be semicircular.
  • the curvature of the curved panel 117 may coincide with the curvature of the rotation section of the curved panel 117 with respect to the first gas injection tube 100.
  • a second nozzle 121 may be formed inside the first gas injection tube 100 to install a second gas injection tube 120 that discharges gas to the first nozzle 101.
  • FIG. 1 is a front view of a gas supply apparatus of a large-area substrate processing system according to an embodiment of the present invention.
  • FIG. 2 is a plan view of FIG. 1.
  • a gas supply apparatus of a large area substrate processing system is installed in a gas supply manifold (not shown) of a large area substrate processing system to supply gas to a substrate.
  • a gas supply device a first gas injection tube 100 including a plurality of first nozzles 101 through which gas flows out, and a first gas injection tube 100 are rotatably installed outside the first gas injection tube 100. It may include a shade 110 for flowing the gas flowing out from the 101 in various directions with respect to the substrate side.
  • a plurality of first gas injection tubes 100 may be installed on the manifold (not shown), and may be detachably inserted into the support 115 fixed to the upper surface of the manifold. When any one of the plurality of first gas injection tubes 100 is broken, only the broken first gas injection tube 100 may be replaced.
  • a plurality of first nozzles 101 are formed in the first gas injection tube 100 at regular intervals, and the first nozzles 101 are arranged in parallel with the central axis of the first gas injection tube 100.
  • the first nozzle 101 of the first gas injection tube 100 may be fixed to a substrate mounted on a boat (not shown) or disposed in a predetermined direction to supply gas in a predetermined direction to the substrate.
  • the upper end of the first gas injection tube 100 may be closed so that the supplied gas is not discharged to the upper surface part.
  • the formation interval of the first nozzle 101 is the same as that of the substrate mounted on the boat, but the central axis of the first nozzle 101 is located at an intermediate position between the substrate and the substrate so that the gas exiting from the first nozzle 101 is transferred to the substrate. You can also pass the top of the.
  • the shade 110 may include a curved panel 117 installed along the first gas injection tube 100 outside the first gas injection tube 100 to rotate around the first gas injection tube 100.
  • the curved panel 117 may be semicircular.
  • the curvature of the curved panel 117 may coincide with the curvature of the rotation section of the curved panel 117 with respect to the first gas injection tube 100.
  • the curved panel 117 may be manufactured in a semicircular shape or some circular shape in which the rotational section and the curvature coincide. As the curved portion of the curved panel 117 coincides with the curvature, the outflow section of the gas to the substrate side along the rotation section may be continuously changed.
  • the curved panel 117 is operated to rotate around the first gas injection tube 100, and may be connected to a driving means capable of providing rotational force, such as an electric motor, and various power transmission means.
  • FIG. 3 is a cross-sectional view in which the second gas injection tube 120 is installed in the first gas injection tube 100 of FIG. 2.
  • a second nozzle 121 may be formed inside the first gas injection tube 100 to install a second gas injection tube 120 that discharges gas to the first nozzle 101.
  • the second gas injection tube 120 which is made of a quartz tube like the first gas injection tube 100, may be installed on an inner central axis of the first gas injection tube 100.
  • the lower side of the second gas injection tube 120 is integrally formed with the inner lower portion of the first gas injection tube 100, so that the gas supplied through the manifold is preferentially
  • the second gas injection tube 120 may be supplied to the second gas injection tube 120, and may flow out through the first nozzle 101 of the first gas injection tube 100 via the second nozzle 121.
  • the outer circumferential surface of the second gas injection tube 120 is spaced apart from the inner circumferential surface of the first gas injection tube 100 at a predetermined interval.
  • the upper end of the first gas injection tube 100 and the upper end of the second gas injection tube 120 may be spaced apart, or may be configured to be in contact with each other.
  • a plurality of second nozzles 121 may be formed on the second gas injection tube 120 in parallel with the central axis of the second gas injection tube 120.
  • the size and spacing of the first nozzle 101 and the second nozzle 121 may be the same.
  • the second nozzle 121 is disposed between the first nozzles 101 for indirect flow of the gas to the first nozzle 101 side and faces in the opposite direction of the substrate opposite to the first nozzles 101. can do.
  • gas is supplied to the substrate side through the first gas injection tube 100 through the manifold to proceed with the deposition or heat treatment process, and the gas supplied to the substrate side is It may be recovered through a gas recovery tube (not shown).
  • the gas is uniformly injected from each of the plurality of first nozzles 101 formed in the first gas injection tube 100. It should be possible.
  • the gas flows into the second gas injection tube 120 installed inside the first gas injection tube 100 on the manifold side, and then opens the second nozzle 121 formed in the second gas injection tube 120. Sprayed through. Since the second nozzle 121 may be formed to be opposite to the direction in which the first nozzle 101 is formed, the gas injected through the second nozzle 121 may be the first gas injection tube 100 and the second gas injection tube. May be diffused into the clearance space of 120.
  • the pressure in the clearance space may be different depending on the position in the clearance space, but the pressure in the clearance space is uniform as a result of the continuous supply of gas through the second nozzle 121. Can be maintained.
  • the injection pressures of the gas injected through each of the plurality of first nozzles 101 may also be maintained the same, so that the gas discharged through the first nozzles 101 It can be supplied uniformly to each of the plurality of substrates loaded on the boat.
  • FIG. 4 is a flow diagram of gas for the curved panel 117 of FIG. 1.
  • the curved panel 117 of the shade 110 rotates around the first gas injection tube 100, and gas flows out of the first nozzle 101 of the first gas injection tube 100.
  • the gas flowing out of the first nozzle 101 is blocked in the direction in which the curved panel 117 intersects, and may flow into both spaces without the curved panel 117.
  • the arrow is the flow direction of the gas.
  • FIG. 5 is diagrams illustrating a flow of gas in a state in which the curved panel 117 of FIG. 4 is rotated.
  • the gas flowing out of the first nozzle 101 may be a curved panel ( 117 may be varied in direction and then flow into the substrate-side space.
  • Gas supplied through the first gas injection tube 100 may flow in various directions on the substrate side by the curved surface panel 117 rotating around the first nozzle 101 and the first nozzle 101.
  • the arrow is the flow direction of the gas.
  • the action of hitting the curved panel 117 to disperse the gas in various directions may be similar to the action of spreading the water stream sprayed from the sprinkler.
  • the gas flowing out of the first gas injection tube 100 is wider than the state in which the first gas injection tube 100 is fixed. It can reach the substrate side while spreading.

Abstract

La présente invention concerne un appareil d'alimentation en gaz installé dans un collecteur destiné à alimenter en gaz un substrat dans un grand système de traitement de substrat, ledit appareil d'alimentation en gaz comprenant : un premier tube de pulvérisation de gaz (100) comprenant une pluralité de premières buses (101) pulvérisant le gaz; et un couvercle (110) installé de manière rotative en dehors du premier tube de pulvérisation de gaz (100) pour diriger le flux de gaz pulvérisé depuis la première buse (101) vers le substrat dans une pluralité de directions.
PCT/KR2011/001320 2010-08-31 2011-02-25 Appareil d'alimentation en gaz dans un grand système de traitement de substrat WO2012030033A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20-2010-0009125 2010-08-31
KR2020100009125U KR200461589Y1 (ko) 2010-08-31 2010-08-31 대면적 기판처리 시스템의 가스 공급 장치

Publications (1)

Publication Number Publication Date
WO2012030033A1 true WO2012030033A1 (fr) 2012-03-08

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KR (1) KR200461589Y1 (fr)
WO (1) WO2012030033A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021150410A (ja) * 2020-03-17 2021-09-27 株式会社Kokusai Electric 基板処理装置、及び半導体装置の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205177786U (zh) * 2013-03-12 2016-04-20 应用材料公司 用于在基板处理腔室中使用的转位式喷射器及基板处理工具
KR101557037B1 (ko) * 2013-08-14 2015-10-02 (주) 예스티 대면적 유리기판 열처리장치
KR102256105B1 (ko) * 2019-12-13 2021-05-27 주식회사 금강쿼츠 반도체 제조에 사용되는 예열용 2중관 노즐

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004228601A (ja) * 2004-04-23 2004-08-12 Hitachi Kokusai Electric Inc 基板処埋装置
JP2005167021A (ja) * 2003-12-03 2005-06-23 Hitachi Kokusai Electric Inc 基板処理装置
KR100562994B1 (ko) * 2005-05-27 2006-03-22 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP2008205151A (ja) * 2007-02-20 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置
KR20090055346A (ko) * 2007-11-28 2009-06-02 국제엘렉트릭코리아 주식회사 노즐 유닛 및 그 유닛을 갖는 원자층 증착 설비

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167021A (ja) * 2003-12-03 2005-06-23 Hitachi Kokusai Electric Inc 基板処理装置
JP2004228601A (ja) * 2004-04-23 2004-08-12 Hitachi Kokusai Electric Inc 基板処埋装置
KR100562994B1 (ko) * 2005-05-27 2006-03-22 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP2008205151A (ja) * 2007-02-20 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置
KR20090055346A (ko) * 2007-11-28 2009-06-02 국제엘렉트릭코리아 주식회사 노즐 유닛 및 그 유닛을 갖는 원자층 증착 설비

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021150410A (ja) * 2020-03-17 2021-09-27 株式会社Kokusai Electric 基板処理装置、及び半導体装置の製造方法
JP7074790B2 (ja) 2020-03-17 2022-05-24 株式会社Kokusai Electric 基板処理装置、及び半導体装置の製造方法

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Publication number Publication date
KR200461589Y1 (ko) 2012-07-23
KR20120001700U (ko) 2012-03-08

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