KR20090055346A - 노즐 유닛 및 그 유닛을 갖는 원자층 증착 설비 - Google Patents
노즐 유닛 및 그 유닛을 갖는 원자층 증착 설비 Download PDFInfo
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- KR20090055346A KR20090055346A KR1020070122222A KR20070122222A KR20090055346A KR 20090055346 A KR20090055346 A KR 20090055346A KR 1020070122222 A KR1020070122222 A KR 1020070122222A KR 20070122222 A KR20070122222 A KR 20070122222A KR 20090055346 A KR20090055346 A KR 20090055346A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
온도 | O3 라이프 타임 |
-50℃ | ∼3달 |
-25℃ | ∼18일 |
20℃ | ∼3일 |
250℃ | ∼1.5초 |
Claims (15)
- 반도체 제조를 위한 노즐유닛에 있어서:기판으로 가스를 공급하는 노즐; 및상기 노즐을 감싸도록 설치되고, 상기 노즐이 복사열로 인해 가열되지 않도록 상기 노즐로 제공되는 복사열을 흡수하여 방열하는 열방출부재를 포함하는 것을 특징으로 하는 반도체 제조를 위한 노즐유닛.
- 제1항에 있어서,상기 열방출부재는상기 노즐이 수납되는 공간을 갖는 보호관; 및상기 보호관의 열기를 방열하는 방열부를 포함하는 것을 특징으로 하는 반도체 제조를 위한 노즐유닛.
- 제2항에 있어서,상기 보호관은 히트파이프로 이루어지는 것을 특징으로 하는 반도체 제조를 위한 노즐유닛.
- 제2항에 있어서,상기 보호관은상기 노즐로부터 분사되는 가스가 상기 기판으로 제공되도록 개구를 갖는 히트파이프를 포함하는 것을 특징으로 하는 반도체 제조를 위한 노즐유닛.
- 제2항에 있어서,상기 방열부는다수의 방열핀들을 갖는 방열블럭을 포함하는 것을 특징으로 하는 반도체 제조를 위한 노즐유닛.
- 제6항에 있어서,상기 방열부는상기 방열블럭에 설치되는 방열팬을 더 포함하는 것을 특징으로 하는 반도체 제조를 위한 노즐유닛.
- 제2항에 있어서,상기 열방출부재는상기 방열부의 신속한 냉각을 위해 상기 방열부로 냉각수를 공급하는 냉각수 공급부를 더 포함하는 것을 특징으로 하는 반도체 제조를 위한 노즐유닛.
- 반도체 제조를 위한 원자층 증착 설비에 있어서:복수의 기판들이 수납되는 보우트가 수용되는 공정튜브;상기 공정튜브를 둘러싸도록 설치되는 히터 어셈블리;상기 공정튜브 안으로 상기 기판 표면에 박막을 형성하기 위한 가스들을 공급하는 노즐; 및상기 히터 어셈블리의 복사열로 인한 상기 노즐의 온도 상승을 방지하기 위한 열방출부재를 포함하는 것을 특징으로 하는 반도체 제조를 위한 원자층 증착 설비.
- 제8항에 있어서,상기 열방출부재는 히트파이프를 포함하는 것을 특징으로 하는 반도체 제조를 위한 원자층 증착 설비.
- 제8항에 있어서,상기 열방출부재는상기 공정 튜브 내에 위치되며, 상기 노즐이 위치되는 내부 공간을 갖는 보호관; 및상기 공정 튜브의 외부에 위치되며 상기 보호관의 열기를 방열하는 방열부를 포함하는 것을 특징으로 하는 반도체 제조를 위한 원자층 증착 설비.
- 제10항에 있어서,상기 보호관은 히트파이프로 이루어지는 것을 특징으로 하는 반도체 제조를 위한 원자층 증착 설비.
- 제10항에 있어서,상기 보호관은상기 노즐로부터 분사되는 공정가스가 상기 웨이퍼 보우트를 향하도록 개구를 포함하는 것을 특징으로 하는 반도체 제조를 위한 원자층 증착 설비.
- 제10항에 있어서,상기 방열부는다수의 방열핀들을 갖는 방열블럭을 포함하는 것을 특징으로 하는 반도체 제조를 위한 원자층 증착 설비.
- 제13항에 있어서,상기 방열부는상기 방열블럭에 설치되는 방열팬을 더 포함하는 것을 특징으로 하는 반도체 제조를 위한 원자층 증착 설비.
- 제10항에 있어서,상기 열방출부재는상기 방열부의 신속한 냉각을 위해 상기 방열부로 냉각수를 공급하는 냉각수 공급부를 더 포함하는 것을 특징으로 하는 반도체 제조를 위한 원자층 증착 설비.
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KR1020070122222A KR100965401B1 (ko) | 2007-11-28 | 2007-11-28 | 노즐 유닛 및 그 유닛을 갖는 원자층 증착 설비 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011007967A2 (ko) * | 2009-07-16 | 2011-01-20 | (주)아이피에스 | 반도체 제조 장치 |
WO2012030033A1 (ko) * | 2010-08-31 | 2012-03-08 | 주식회사 테라세미콘 | 대면적 기판처리 시스템의 가스 공급 장치 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08218171A (ja) * | 1995-02-08 | 1996-08-27 | Nippon Sanso Kk | シャワーヘッド式cvd装置 |
KR20060082141A (ko) * | 2005-01-10 | 2006-07-18 | 국제엘렉트릭코리아 주식회사 | 원자층 증착 설비 |
JP4566787B2 (ja) | 2005-02-28 | 2010-10-20 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
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- 2007-11-28 KR KR1020070122222A patent/KR100965401B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011007967A2 (ko) * | 2009-07-16 | 2011-01-20 | (주)아이피에스 | 반도체 제조 장치 |
WO2011007967A3 (ko) * | 2009-07-16 | 2011-03-31 | (주)아이피에스 | 반도체 제조 장치 |
US8246747B2 (en) | 2009-07-16 | 2012-08-21 | Wonik Ips Co., Ltd. | Apparatus for manufacturing semiconductor |
WO2012030033A1 (ko) * | 2010-08-31 | 2012-03-08 | 주식회사 테라세미콘 | 대면적 기판처리 시스템의 가스 공급 장치 |
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