WO2011007967A3 - 반도체 제조 장치 - Google Patents

반도체 제조 장치 Download PDF

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Publication number
WO2011007967A3
WO2011007967A3 PCT/KR2010/004104 KR2010004104W WO2011007967A3 WO 2011007967 A3 WO2011007967 A3 WO 2011007967A3 KR 2010004104 W KR2010004104 W KR 2010004104W WO 2011007967 A3 WO2011007967 A3 WO 2011007967A3
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WO
WIPO (PCT)
Prior art keywords
wafers
susceptors
boat
tube
processing
Prior art date
Application number
PCT/KR2010/004104
Other languages
English (en)
French (fr)
Other versions
WO2011007967A2 (ko
Inventor
류선호
박상준
김영준
Original Assignee
(주)아이피에스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)아이피에스 filed Critical (주)아이피에스
Priority to CN201080032024.5A priority Critical patent/CN102576669B/zh
Priority to JP2012520527A priority patent/JP2012533876A/ja
Publication of WO2011007967A2 publication Critical patent/WO2011007967A2/ko
Publication of WO2011007967A3 publication Critical patent/WO2011007967A3/ko
Priority to US13/347,896 priority patent/US8246747B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

반도체 제조 공정에서 웨이퍼 상에 막을 형성하는 등의 각종 공정에 사용되는 반도체 제조 장치를 개시한다. 튜브는 내부에 공정공간을 가지며, 일측에 배출구를 갖는다. 보트는 튜브의 하측 개구를 통해 출입 가능하게 된다. 서셉터는 보트 내에 상하로 서로 이격되어 지지되며, 각각의 회전 중심에 중앙 홀이 형성되며, 각각의 상면에 중심 둘레를 따라 웨이퍼가 다수 안착된다. 공급관은 보트의 상측으로부터 서셉터들의 각 중앙 홀에 관통하여 설치되며, 외부로부터 공급받은 공정가스를 서셉터들의 각 상면으로 분사하는 분사구들이 형성된다. 이에 따라, 한번에 공정 처리할 수 있는 웨이퍼의 수량을 증가시킬 수 있고, 공정 처리 시간을 단축할 수 있으며, 모든 웨이퍼들 상에 균일한 막을 형성할 수 있다.
PCT/KR2010/004104 2009-07-16 2010-06-24 반도체 제조 장치 WO2011007967A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201080032024.5A CN102576669B (zh) 2009-07-16 2010-06-24 半导体制造装置
JP2012520527A JP2012533876A (ja) 2009-07-16 2010-06-24 半導体製造装置
US13/347,896 US8246747B2 (en) 2009-07-16 2012-01-11 Apparatus for manufacturing semiconductor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0064952 2009-07-16
KR1020090064952A KR20110007434A (ko) 2009-07-16 2009-07-16 반도체 제조 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/347,896 Continuation US8246747B2 (en) 2009-07-16 2012-01-11 Apparatus for manufacturing semiconductor

Publications (2)

Publication Number Publication Date
WO2011007967A2 WO2011007967A2 (ko) 2011-01-20
WO2011007967A3 true WO2011007967A3 (ko) 2011-03-31

Family

ID=43449934

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004104 WO2011007967A2 (ko) 2009-07-16 2010-06-24 반도체 제조 장치

Country Status (6)

Country Link
US (1) US8246747B2 (ko)
JP (1) JP2012533876A (ko)
KR (1) KR20110007434A (ko)
CN (1) CN102576669B (ko)
TW (1) TWI492325B (ko)
WO (1) WO2011007967A2 (ko)

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KR101205436B1 (ko) * 2011-01-04 2012-11-28 삼성전자주식회사 화학 기상 증착 장치
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CN103184434B (zh) * 2011-12-31 2016-08-10 北京北方微电子基地设备工艺研究中心有限责任公司 托盘装置、托盘及半导体处理设备
CN103628039A (zh) * 2012-08-28 2014-03-12 北京北方微电子基地设备工艺研究中心有限责任公司 Mocvd反应腔及mocvd设备
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CN106245004A (zh) * 2016-10-10 2016-12-21 无锡宏纳科技有限公司 内外喷气式低压化学气相沉淀腔
CN106399972A (zh) * 2016-10-10 2017-02-15 无锡宏纳科技有限公司 低压化学气相沉淀腔
CN106399970A (zh) * 2016-10-10 2017-02-15 无锡宏纳科技有限公司 环管式低压化学气相沉淀腔
JP6952595B2 (ja) * 2017-12-20 2021-10-20 東京エレクトロン株式会社 縦型熱処理装置
CN113327884B (zh) * 2020-02-29 2023-10-17 长鑫存储技术有限公司 晶圆支撑件、晶圆加工装置及晶圆加工方法
CN116096939A (zh) * 2020-09-07 2023-05-09 苏州晶湛半导体有限公司 一种晶片承载盘
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Also Published As

Publication number Publication date
KR20110007434A (ko) 2011-01-24
JP2012533876A (ja) 2012-12-27
TWI492325B (zh) 2015-07-11
TW201115673A (en) 2011-05-01
CN102576669B (zh) 2015-06-03
US8246747B2 (en) 2012-08-21
CN102576669A (zh) 2012-07-11
US20120103260A1 (en) 2012-05-03
WO2011007967A2 (ko) 2011-01-20

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