KR200461589Y1 - 대면적 기판처리 시스템의 가스 공급 장치 - Google Patents

대면적 기판처리 시스템의 가스 공급 장치 Download PDF

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Publication number
KR200461589Y1
KR200461589Y1 KR2020100009125U KR20100009125U KR200461589Y1 KR 200461589 Y1 KR200461589 Y1 KR 200461589Y1 KR 2020100009125 U KR2020100009125 U KR 2020100009125U KR 20100009125 U KR20100009125 U KR 20100009125U KR 200461589 Y1 KR200461589 Y1 KR 200461589Y1
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KR
South Korea
Prior art keywords
gas
injection tube
gas injection
nozzle
processing system
Prior art date
Application number
KR2020100009125U
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English (en)
Korean (ko)
Other versions
KR20120001700U (ko
Inventor
김상문
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to KR2020100009125U priority Critical patent/KR200461589Y1/ko
Priority to PCT/KR2011/001320 priority patent/WO2012030033A1/fr
Publication of KR20120001700U publication Critical patent/KR20120001700U/ko
Application granted granted Critical
Publication of KR200461589Y1 publication Critical patent/KR200461589Y1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR2020100009125U 2010-08-31 2010-08-31 대면적 기판처리 시스템의 가스 공급 장치 KR200461589Y1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR2020100009125U KR200461589Y1 (ko) 2010-08-31 2010-08-31 대면적 기판처리 시스템의 가스 공급 장치
PCT/KR2011/001320 WO2012030033A1 (fr) 2010-08-31 2011-02-25 Appareil d'alimentation en gaz dans un grand système de traitement de substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2020100009125U KR200461589Y1 (ko) 2010-08-31 2010-08-31 대면적 기판처리 시스템의 가스 공급 장치

Publications (2)

Publication Number Publication Date
KR20120001700U KR20120001700U (ko) 2012-03-08
KR200461589Y1 true KR200461589Y1 (ko) 2012-07-23

Family

ID=45773080

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2020100009125U KR200461589Y1 (ko) 2010-08-31 2010-08-31 대면적 기판처리 시스템의 가스 공급 장치

Country Status (2)

Country Link
KR (1) KR200461589Y1 (fr)
WO (1) WO2012030033A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014158457A1 (fr) * 2013-03-12 2014-10-02 Applied Materials, Inc. Injecteur indexé de jet de gaz pour système de traitement de substrat
KR101557037B1 (ko) * 2013-08-14 2015-10-02 (주) 예스티 대면적 유리기판 열처리장치
KR102256105B1 (ko) * 2019-12-13 2021-05-27 주식회사 금강쿼츠 반도체 제조에 사용되는 예열용 2중관 노즐

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7074790B2 (ja) * 2020-03-17 2022-05-24 株式会社Kokusai Electric 基板処理装置、及び半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100562994B1 (ko) * 2005-05-27 2006-03-22 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP2008205151A (ja) * 2007-02-20 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4267434B2 (ja) * 2003-12-03 2009-05-27 株式会社日立国際電気 基板処理装置
JP3960987B2 (ja) * 2004-04-23 2007-08-15 株式会社日立国際電気 反応容器
KR100965401B1 (ko) * 2007-11-28 2010-06-24 국제엘렉트릭코리아 주식회사 노즐 유닛 및 그 유닛을 갖는 원자층 증착 설비

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100562994B1 (ko) * 2005-05-27 2006-03-22 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP2008205151A (ja) * 2007-02-20 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014158457A1 (fr) * 2013-03-12 2014-10-02 Applied Materials, Inc. Injecteur indexé de jet de gaz pour système de traitement de substrat
US10119194B2 (en) 2013-03-12 2018-11-06 Applied Materials, Inc. Indexed gas jet injector for substrate processing system
KR101557037B1 (ko) * 2013-08-14 2015-10-02 (주) 예스티 대면적 유리기판 열처리장치
KR102256105B1 (ko) * 2019-12-13 2021-05-27 주식회사 금강쿼츠 반도체 제조에 사용되는 예열용 2중관 노즐

Also Published As

Publication number Publication date
KR20120001700U (ko) 2012-03-08
WO2012030033A1 (fr) 2012-03-08

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