WO2015034078A1 - 電子部品搭載基板およびその製造方法 - Google Patents
電子部品搭載基板およびその製造方法 Download PDFInfo
- Publication number
- WO2015034078A1 WO2015034078A1 PCT/JP2014/073599 JP2014073599W WO2015034078A1 WO 2015034078 A1 WO2015034078 A1 WO 2015034078A1 JP 2014073599 W JP2014073599 W JP 2014073599W WO 2015034078 A1 WO2015034078 A1 WO 2015034078A1
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- WIPO (PCT)
- Prior art keywords
- electronic component
- plate
- component mounting
- copper
- silver
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000010949 copper Substances 0.000 claims abstract description 122
- 229910052751 metal Inorganic materials 0.000 claims abstract description 114
- 239000002184 metal Substances 0.000 claims abstract description 114
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 104
- 229910052802 copper Inorganic materials 0.000 claims abstract description 104
- 238000007747 plating Methods 0.000 claims abstract description 83
- 229910052709 silver Inorganic materials 0.000 claims abstract description 73
- 239000004332 silver Substances 0.000 claims abstract description 72
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 56
- 230000003746 surface roughness Effects 0.000 claims abstract description 17
- 238000004381 surface treatment Methods 0.000 claims abstract description 12
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 27
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000005422 blasting Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 5
- 238000007788 roughening Methods 0.000 abstract 1
- 238000005304 joining Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 239000010419 fine particle Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000011164 primary particle Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000003825 pressing Methods 0.000 description 5
- 239000010944 silver (metal) Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000002612 dispersion medium Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- BEFDCLMNVWHSGT-UHFFFAOYSA-N ethenylcyclopentane Chemical compound C=CC1CCCC1 BEFDCLMNVWHSGT-UHFFFAOYSA-N 0.000 description 2
- 239000010946 fine silver Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229940075582 sorbic acid Drugs 0.000 description 2
- 235000010199 sorbic acid Nutrition 0.000 description 2
- 239000004334 sorbic acid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to an electronic component mounting substrate and a method for manufacturing the same, and more particularly to an electronic component such as a semiconductor chip on the other surface of a metal plate of a metal-ceramic bonding substrate in which one surface of a copper plate or a copper plating plate is bonded to a ceramic substrate.
- the present invention relates to an electronic component mounting board to which is attached and a method for manufacturing the same.
- a power module is used to control a large current of an electric vehicle, a train, a machine tool, and the like.
- a metal-ceramic insulating substrate is fixed to one surface of a metal plate or composite material called a base plate, and a semiconductor chip is fixed onto the metal plate of the metal-ceramic insulating substrate by soldering.
- a silver paste containing silver fine particles has been used as a bonding material, a bonding material is interposed between objects to be bonded such as a copper plate, and heated for a predetermined time while applying pressure between the objects to be bonded.
- a method has been proposed in which the Ag portion of a semiconductor element and a Cu circuit board on a ceramic insulating substrate are joined by heating with a metal nano paste in which Ag nanoparticles are dispersed in an organic solvent.
- a concave portion is formed on the surface of the Cu circuit board where the Cu circuit board is bonded to the Ag portion of the semiconductor element, which is advantageous for large area bonding.
- the present invention maintains a good bonding state even after an electronic component is bonded on a copper plate or a copper plating plate with few bonding defects and a heat cycle is applied.
- An object of the present invention is to provide an electronic component mounting substrate having excellent thermal shock resistance and a method for manufacturing the same.
- the inventors of the present invention have provided a method for manufacturing an electronic component mounting substrate in which an electronic component is mounted on one surface of a copper plate or a copper plating plate.
- the method for manufacturing an electronic component mounting board according to the present invention is a method for manufacturing an electronic component mounting board in which an electronic component is mounted on one surface of a copper plate or a copper plating plate.
- the surface processing is preferably wet blasting. Further, after the surface treatment, it is preferable to anneal the copper plate or the copper plating plate before applying the silver paste, and it is preferable that the Vickers hardness Hv of the copper plate or the copper plating plate is 40 or less by this annealing. . Moreover, it is preferable to heat the silver component in the silver paste while pressing the electronic component against the copper plate or the copper plating plate.
- the surface joined to one surface of the copper plate or the copper plating plate of the electronic component is plated with at least one metal selected from the group consisting of gold, silver and palladium, or an alloy thereof.
- the electronic component mounting board according to the present invention is an electronic component mounting board in which an electronic component is mounted on one surface of a copper plate or a copper plating plate, and the surface roughness of one surface of the copper plate or the copper plating plate is 0.4 ⁇ m.
- an electronic component is bonded to one surface of the copper plate or the copper plating plate by a silver bonding layer.
- the surface roughness of one surface of the copper plate or the copper plating plate is preferably 0.5 to 2.0 ⁇ m.
- the Vickers hardness Hv of one surface of a copper plate or a copper plating plate is 100 or less, and it is further more preferable that it is 40 or less.
- the surface joined to one surface of the copper plate or the copper plating plate of the electronic component is plated with at least one metal selected from the group consisting of gold, silver and palladium, or an alloy thereof.
- a silver joining layer contains the sintered compact of silver.
- an electronic component can be bonded on a copper plate or a copper plating plate with few bonding defects, and a good bonding state can be maintained even after a heat cycle is applied, and excellent in thermal shock resistance.
- An electronic component mounting substrate and a manufacturing method thereof can be provided.
- FIG. 1 is a cross-sectional view of an embodiment of an electronic component mounting substrate according to the present invention.
- FIG. 2 is a perspective view of the electronic component mounting substrate of FIG.
- a silver plate is formed on one main surface of a metal plate 10 having a substantially rectangular planar shape (for mounting electronic components).
- the electronic component 14 is bonded by the silver bonding layer 12 (including the body).
- one main surface of a ceramic substrate 16 having a substantially rectangular plane shape is joined to the other main surface of the metal plate 10, and a heat radiating metal having a substantially rectangular planar shape is bonded to the other main surface of the ceramic substrate 16.
- a plate (metal base plate) 18 may be joined.
- the copper plating film 20 may be formed on one main surface of the metal plate 10, and the electronic component 14 may be bonded to the copper plating film 20 by the silver bonding layer 12.
- the metal plate 10 is made of copper or aluminum (in the case of forming the copper plating film 20) or aluminum alloy, and one main surface of the metal plate 10 (or the surface of the copper plating film 20) (the electronic component 14 is The surface roughness of the surfaces to be joined is 0.4 ⁇ m or more, preferably 0.5 to 2.0 ⁇ m.
- the Vickers hardness Hv of one main surface of the metal plate 10 (or the surface of the copper plating film 20) (the surface to which the electronic component 14 is joined) is preferably 100 or less, and more preferably 40 or less. preferable.
- the surface joined to one main surface of the metal plate 10 of the electronic component 14 (the surface to which the electronic component 14 is bonded) (the surface of the copper plating film 20 when the copper plating film 20 is formed) is gold. It is preferably covered with a metal that can be bonded by the silver bonding layer 12, such as at least one metal selected from the group consisting of silver, copper, and palladium, or an alloy thereof, and the group consisting of gold, silver, and palladium. It is preferable to plate with at least one metal selected from the group consisting of these or alloys thereof.
- one main surface of the metal plate 10 (or the surface of the copper plating film 20) (surface on which the electronic component 14 is bonded) is roughened. Then, surface treatment is performed to make the surface roughness 0.4 ⁇ m or more, preferably 0.5 to 2.0 ⁇ m, and a silver paste is applied to the main surface (or the surface of the copper plating film 20) to attach the electronic component 14.
- the silver in the silver paste is sintered to form the silver bonding layer 12, and the electronic component 14 is placed on one main surface of the metal plate 10 (or the surface of the copper plating film 20) by the silver bonding layer 12.
- the electronic component 14 is placed on one main surface of the metal plate 10 (or the surface of the copper plating film 20) by the silver bonding layer 12.
- one main surface of the metal plate 10 (or the surface of the copper plating film 20) is heat-treated and annealed. It is preferable that the Vickers hardness Hv of the metal plate 10 (or the copper plating film 20) is (reduced) to be 40 or less (soft) by this annealing.
- the heating temperature at the time of annealing is preferably 300 to 650 ° C, and more preferably 350 to 450 ° C. Further, the heating time during the annealing is preferably 15 to 90 minutes, and more preferably 30 to 60 minutes.
- the silver in the silver paste is preferably sintered by heating the electronic component 14 while applying pressure to the metal plate 10 (or the copper plating film 20).
- the heating temperature during the sintering is preferably 200 to 400 ° C, more preferably 220 to 300 ° C.
- the heating time during the sintering is preferably 1 to 10 minutes.
- the pressure applied during the sintering may be 10 MPa or less, preferably 2 to 10 MPa, and more preferably 3 to 8 MPa.
- one main surface of a ceramic substrate 16 having a substantially rectangular plane shape is joined to the other main surface of the metal plate 10, and a heat radiating metal having a substantially rectangular planar shape is bonded to the other main surface of the ceramic substrate 16.
- a plate (metal base plate) 18 may be joined.
- one main surface of the metal plate 10 (or the surface of the copper plating film 20) (electronic component) 14 is bonded to the main surface (or the surface of the copper plating film 20) to dispose the electronic component 14 and then sinter the silver in the silver paste.
- a silver bonding layer 12 is formed, and the electronic component 14 may be bonded to one main surface of the metal plate 10 (or the surface of the copper plating film 20) by the silver bonding layer 12.
- the metal plate 10 is made of a copper plate
- the metal plate 10 and the ceramic substrate 16 and the ceramic substrate 16 and the metal base plate 18 may be directly bonded, or may be bonded via a brazing material. Also good.
- one main surface of the metal plate 10 (or the surface of the copper plating film 20). Surface processing may be performed.
- the Vickers hardness of the metal plate 10 is heated by heating the metal plate 10 (or the copper plating film 20) without performing annealing by heat treatment after the surface processing.
- the height Hv can be (reduced) to be 40 or less (soft).
- the metal base plate 18 is preferably formed and directly joined.
- Surface processing includes blasting (such as wet blasting in which an abrasive slurry containing fine particles in a liquid is sprayed onto the surface of a metal plate) or metal plate on a lapping machine via a lapping agent as abrasive grains. It is preferable to carry out by lapping (placement and sliding by applying pressure to the metal plate and polishing).
- a paste containing silver fine particles that can be sintered at a temperature of 400 ° C. or lower can be used, which is coated with an organic compound having 8 or less (preferably 6 to 8) carbon atoms such as sorbic acid.
- a bonding material for example, PA-HT-1503M-C manufactured by DOWA Electronics Co., Ltd.
- a bonding material for example, PA-HT-1503M-C manufactured by DOWA Electronics Co., Ltd.
- silver fine particles having an average primary particle diameter of 1 to 200 nm are dispersed in a dispersion medium (preferably a polar solvent).
- a dispersion medium preferably a polar solvent.
- Such fine silver particles having an average primary particle size in the dispersion medium by dispersing (D 50 diameter) of 0.5 ⁇ 3.0 [mu] m (spherical) bonding material silver particles were further dispersed e.g., DOWA Electronics Co. of PA -HT-1001L
- the silver in the silver paste is sintered, it is heated at a low temperature of about 250 to 260 ° C. while being pressurized at a low pressure of about 5 to 7 MPa.
- the electronic component can be bonded with sufficient bonding strength on the metal plate (copper plate or copper plating plate) (there is almost no bonding defect such as a void in the bonding portion).
- surface roughness refers to the arithmetic average roughness Ra calculated based on JIS B0601 (2001).
- the “average primary particle diameter of silver particles (D 50 diameter)” refers to the 50% particle diameter (D 50 diameter) (cumulative 50 mass% particle diameter) of silver particles measured by a laser diffraction method.
- the “average primary particle diameter of the fine particles” means an average value of primary particle diameters of the silver fine particles according to a transmission electron micrograph (TEM image).
- TEM image transmission electron micrograph
- a metal plate (for electronic component mounting) and a metal base plate (for heat dissipation) made of oxygen-free copper of 48 mm ⁇ 57 mm ⁇ 0.25 mm were prepared.
- one main surface of a ceramic substrate made of AlN of 49 mm ⁇ 58 mm ⁇ 0.64 mm is placed on one surface of a metal plate (for mounting electronic components) through an Ag—Cu brazing material containing Ti as an active metal.
- a metal base plate (for heat dissipation) was bonded to the other surface of the ceramic substrate to produce a metal-ceramic bonding substrate.
- a wet blasting apparatus model number NFR-737 manufactured by Macau Corporation.
- processing conditions of the wet blasting apparatus an air pressure of 0.20 MPa, a processing speed of 0.3 m / min, a projection distance of 20 mm, a projection angle of 90 °, and 15 volumes of alumina # 320 having an average particle diameter of 40 ⁇ m as abrasive grains in water. % Abrasive slurry was used.
- any surface of the metal plate From the result of measuring the line roughness along an arbitrary straight line having a length of 100 ⁇ m parallel to one side of a 100 ⁇ m ⁇ 100 ⁇ m square region, the surface roughness (arithmetic average roughness Ra) is based on JIS B0601 (2001). ) was 0.81 ⁇ m.
- the Vickers hardness Hv of the other surface of the metal plate was 97.8 when measured with a micro hardness tester (Fischer scope HM2000 manufactured by Helmoth Fischer) under the condition of 300 mN / 10 s.
- This silver paste is applied to the electronic component mounting portion on the (surface-treated) surface of the metal plate (for electronic component mounting) of the metal-ceramic bonding substrate, and the bottom surface (back surface) is gold-plated as an electronic component thereon.
- the joint between the metal plate (for electronic component mounting) and the Si chip was observed with an ultrasonic flaw detector (SAT) (FineSAT FS100II manufactured by Hitachi Construction Machinery Finetech Co., Ltd.).
- SAT ultrasonic flaw detector
- the joint was not peeled off, and there was no joint defect such as a void, and the joint was satisfactorily joined.
- the manufactured electronic component mounting substrate is held at ⁇ 40 ° C. for 15 minutes, then held at room temperature for 1 minute, then held at 175 ° C. for 15 minutes and then held at room temperature for 1 minute after 100 cycles and 300 cycles.
- a metal-ceramic bonding substrate subjected to surface treatment of a metal plate was subjected to the same method as in Example 1 except that it was heated and annealed in hydrogen gas at 370 ° C. for 30 minutes in a reducing gas atmosphere.
- An electronic component mounting substrate was produced.
- the surface roughness (arithmetic average roughness Ra) of the (surface-treated) surface of the metal plate (for electronic component mounting) after annealing is 0.77 ⁇ m
- the (surface) of the metal plate (for electronic component mounting) The (treated) surface Vickers hardness Hv was 36.1.
- the joint between the metal plate (for electronic component mounting) and the Si chip was observed by the same method as in Example 1.
- a ceramic substrate made of AlN having a size of 78 mm ⁇ 95 mm ⁇ 0.64 mm is placed in the mold, and after pouring a 99.9 mass% molten aluminum so as to be in contact with both main surfaces of the ceramic substrate, Is cooled and solidified, each main surface of the ceramic substrate has a metal plate (for mounting electronic components) of 68 mm ⁇ 85 mm ⁇ 0.2 mm and a size of 68 mm ⁇ 85 mm ⁇ 0.2 mm (heat dissipation).
- a metal base plate was formed and bonded directly to the main surface of the ceramic substrate.
- the surface treatment of the metal plate (for electronic component mounting) was performed by the same wet blast apparatus as in Example 1.
- the treatment conditions of the wet blasting apparatus are air pressure 0.20 MPa, treatment speed 0.3 m / min, projection distance 30 mm, projection angle 90 °, and 15 volumes of alumina # 320 having an average particle size of 40 ⁇ m as abrasive grains in water. % Abrasive slurry was used.
- the surface roughness (arithmetic mean roughness Ra) of the metal plate (for electronic component mounting) after the wet blasting treatment was calculated by the same method as in Example 1 and was 1.6 ⁇ m.
- the metal plate had a Vickers hardness Hv of 29.1.
- the metal (for mounting electronic components) is immersed in an electroless nickel plating solution (Top Nicolon TOM-LF manufactured by Okuno Pharmaceutical Co., Ltd.) after the double zincate treatment (for mounting electronic components).
- a Ni plating layer having a thickness of 4 to 5 ⁇ m was formed on the plate.
- the metal plate on which the Ni plating layer is formed is immersed in an electroless copper plating solution (AIS-Adcopper CT manufactured by Okuno Pharmaceutical Co., Ltd.), thereby mounting the metal plate.
- a Cu plating layer having a thickness of 0.4 to 0.5 ⁇ m was formed on the upper Ni plating layer.
- the surface roughness (arithmetic mean roughness Ra) of the surface of the Cu plating layer on the metal plate (for electronic component mounting) after forming the Cu plating layer is 1.6 ⁇ m
- the Vickers hardness Hv is 29. 1
- a Si chip was bonded to the Cu plating layer on the metal plate (for mounting electronic components) in the same manner as in Example 1 except that the pressure during bonding was set to 5 MPa.
- the joint between the Cu plating layer on the metal plate (for electronic component mounting) and the Si chip was observed by the same method as in Example 1. There was no good bonding.
- the manufactured electronic component mounting substrate is held at ⁇ 40 ° C.
- the surface roughness (arithmetic mean roughness Ra) of the (plated) surface of the Cu plating layer on the metal plate (for electronic component mounting) is 0.15 ⁇ m, and the Vickers of the metal plate (for electronic component mounting) Hardness Hv was 29.1.
- the joint portion between the metal plate (for electronic component mounting) and the Si chip was observed by the same method as in Example 3. It was joined.
- the joining state after the heat cycle similar to Example 1 was confirmed about the produced electronic component mounting board
- a ceramic substrate made of AlN having a size of 34 mm ⁇ 31 mm ⁇ 0.6 mm is placed in a mold, and a metal (for mounting electronic components) having a size of 30 mm ⁇ 27 mm ⁇ 0.4 mm is disposed on each main surface of the ceramic substrate.
- a metal plate is directly bonded to each main surface of the ceramic substrate in the same manner as in Example 3 except that a plate and a metal base plate (for heat dissipation) of 30 mm ⁇ 27 mm ⁇ 0.4 mm are formed.
- a metal plate was subjected to surface treatment and double zincate treatment to form a Ni plating layer and a Cu plating layer.
- the surface roughness (arithmetic average roughness Ra) of the surface of the Cu plating layer on the metal plate (for electronic component mounting) after forming the Cu plating layer is 1.5 ⁇ m, and the Vickers hardness Hv is 29. 0.
- the same silver paste as in Example 1 was applied to the electronic component mounting portion on the surface of the Cu plating layer on the metal plate (for electronic component mounting) of the produced metal-ceramic bonding substrate, and the electronic component was further formed thereon.
- a Si chip (bottom layer (back surface) a Ti plating layer having a thickness of 1 ⁇ m and a Ni plating layer having a thickness of 3 ⁇ m (on it) were formed, and these foundation layers were plated with gold (7 mm ⁇ 7 mm).
- Si chip is placed, heated in a nitrogen atmosphere at a heating rate of 1 ° C./s, and then heated at 250 ° C. for 5 minutes while being pressurized at 6 MPa (for mounting electronic components) ) Si chip was bonded to the Cu plating layer on the metal plate.
- an ultrasonic flaw detector (SAT) (manufactured by Hitachi Construction Machinery Finetech Co., Ltd.) is used to connect the joint between the Cu plating layer on the metal plate and the Si chip (for electronic component mounting).
- SAT ultrasonic flaw detector
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
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- Die Bonding (AREA)
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Abstract
Description
近年、銀微粒子を含む銀ペーストを接合材として使用し、銅板などの被接合物間に接合材を介在させ、被接合物間に圧力を加えながら所定時間加熱して、接合材中の銀を焼結させて、被接合物同士を接合することが提案されており(例えば、特開2011−80147号公報参照)、このような銀微粒子を含む銀ペーストからなる接合材を半田の代わりに使用して、金属−セラミックス絶縁基板の金属板上に半導体チップなどの電子部品を固定する試みがなされている。
このように電子部品を基板上に固定する方法として、半導体素子の端子と基板の電極との間に低温で焼結するAgナノ粒子を介在させ、Agナノ粒子を焼結させて、半導体素子の端子と基板の電極とを接合する方法が提案されている(例えば、特開2007−208082号公報参照)。
また、半導体素子のAg部分とセラミックス絶縁基板上のCu回路板とを、Agナノ粒子を有機系溶媒中に分散させた金属ナノペーストを介在させて、加熱して接合する方法が提案されている(例えば、特開2006−202586号公報参照)。この方法では、Cu回路板が半導体素子のAg部分と接合するCu回路板の表面に凹部を形成して、大面積の接合に有利にしている。
しかし、特開2011−80147号公報、特開2007−208082号公報および特開2006−202586号公報の方法では、(電子部品搭載用)金属板として銅板または(アルミニウム板に銅めっきを施した)銅めっき板を使用して、銀ペーストからなる接合材によって、金属板上に半導体チップなどの電子部品を接合した場合、接合欠陥が少ない状態で接合することができず、接合後にヒートサイクルを付与すると、良好な接合状態を保持することができなかった。
本発明者らは、上記課題を解決するために鋭意研究した結果、銅板または銅めっき板の一方の面に電子部品が搭載された電子部品搭載基板の製造方法において、銅板または銅めっき板の一方の面の表面粗さを0.4μm以上にする表面加工を行い、その面に銀ペーストを塗布して電子部品を配置した後、銀ペースト中の銀を焼結させて銀接合層を形成し、この銀接合層によって電子部品を銅板または銅めっき板の一方の面に接合することにより、銅板または銅めっき板上に電子部品を接合欠陥が少ない状態で接合して、ヒートサイクルを付与した後にも良好な接合状態を保持することができることを見出し、本発明を完成するに至った。
すなわち、本発明による電子部品搭載基板の製造方法は、銅板または銅めっき板の一方の面に電子部品が搭載された電子部品搭載基板の製造方法において、銅板または銅めっき板の一方の面の表面粗さを0.4μm以上にする表面加工を行い、その面に銀ペーストを塗布して電子部品を配置した後、銀ペースト中の銀を焼結させて銀接合層を形成し、この銀接合層によって電子部品を銅板または銅めっき板の一方の面に接合することを特徴とする。
この電子部品搭載基板の製造方法において、表面加工がウエットブラスト処理であるのが好ましい。また、表面加工を行った後、銀ペーストを塗布する前に、銅板または銅めっき板を焼鈍するのが好ましく、この焼鈍により銅板または銅めっき板のビッカース硬さHvを40以下にするのが好ましい。また、銀ペースト中の銀の焼結は、銅板または銅めっき板に対して電子部品を加圧しながら加熱するのが好ましい。また、電子部品の銅板または銅めっき板の一方の面に接合される面が、金、銀およびパラジウムからなる群から選ばれる少なくとも一種の金属またはこれらの合金でめっきされているのが好ましい。また、銅板または銅めっき板の他方の面にセラミックス基板の一方の面を接合するのが好ましく、セラミックス基板の他方の面に金属ベース板を接合するのが好ましい。
また、本発明による電子部品搭載基板は、銅板または銅めっき板の一方の面に電子部品が搭載された電子部品搭載基板において、銅板または銅めっき板の一方の面の表面粗さが0.4μm以上であり、この銅板または銅めっき板の一方の面に銀接合層により電子部品が接合されていることを特徴とする。
この電子部品搭載基板において、銅板または銅めっき板の一方の面の表面粗さが0.5~2.0μmであるのが好ましい。また、銅板または銅めっき板の一方の面のビッカース硬さHvが100以下であるのが好ましく、40以下であるのがさらに好ましい。また、電子部品の銅板または銅めっき板の一方の面に接合される面が、金、銀およびパラジウムからなる群から選ばれる少なくとも一種の金属またはこれらの合金でめっきされているのが好ましい。また、銀接合層が銀の焼結体を含むのが好ましい。また、銅板または銅めっき板の他方の面にセラミックス基板の一方の面が接合されているのが好ましく、セラミックス基板の他方の面に金属ベース板が接合されているのが好ましい。
本発明によれば、銅板または銅めっき板上に電子部品を接合欠陥が少ない状態で接合して、ヒートサイクルを付与した後にも良好な接合状態を保持することができる、耐熱衝撃性に優れた電子部品搭載基板およびその製造方法を提供することができる。
Fig.2は、図1の電子部品搭載基板の斜視図である。
図1および図2に示すように、本発明による電子部品搭載基板の実施の形態では、平面形状が略矩形の(電子部品搭載用)金属板10の一方の主面に、(銀の焼結体を含む)銀接合層12により電子部品14が接合されている。また、金属板10の他方の主面に、平面形状が略矩形のセラミックス基板16の一方の主面を接合し、このセラミックス基板16の他方の主面に、平面形状が略矩形の放熱用金属板(金属ベース板)18を接合してもよい。また、金属板10の一方の主面に銅めっき皮膜20を形成し、その銅めっき皮膜20上に、銀接合層12により電子部品14を接合してもよい。
なお、金属板10は、銅あるいは(銅めっき皮膜20を形成する場合には)アルミニウムまたはアルミニウム合金からなり、金属板10の一方の主面(または銅めっき皮膜20の表面)(電子部品14が接合される面)の表面粗さが0.4μm以上、好ましくは0.5~2.0μmになっている。また、金属板10の一方の主面(または銅めっき皮膜20の表面)(電子部品14が接合される面)のビッカース硬さHvが100以下であるのが好ましく、40以下であるのがさらに好ましい。
また、電子部品14の金属板10の一方の主面(電子部品14が接合される面)(銅めっき皮膜20を形成する場合には銅めっき皮膜20の表面)に接合される面が、金、銀、銅およびパラジウムからなる群から選ばれる少なくとも一種の金属またはこれらの合金のように、銀接合層12で接合可能な金属で覆われているのが好ましく、金、銀およびパラジウムからなる群から選ばれる少なくとも一種の金属またはこれらの合金でめっきされているのが好ましい。
本発明による電子部品搭載基板の製造方法の実施の形態では、銅あるいは(銅めっき皮膜20を形成する場合には)アルミニウムまたはアルミニウム合金からなる金属板10の一方の主面(または銅めっき皮膜20の表面)に電子部品14が搭載された電子部品搭載基板の製造方法において、金属板10の一方の主面(または銅めっき皮膜20の表面)(電子部品14が接合される面)を粗くしてその表面粗さを0.4μm以上、好ましくは0.5~2.0μmにする表面加工を行い、その主面(または銅めっき皮膜20の表面)に銀ペーストを塗布して電子部品14を配置した後、銀ペースト中の銀を焼結させて銀接合層12を形成し、この銀接合層12によって電子部品14を金属板10の一方の主面(または銅めっき皮膜20の表面)に接合する。
また、表面加工を行った後、銀ペーストを塗布する前に、金属板10の一方の主面(または銅めっき皮膜20の表面)(電子部品14が接合される面)を加熱処理して焼鈍するのが好ましく、この焼鈍により金属板10(または銅めっき皮膜20)のビッカース硬さHvを(小さくして)40以下に(軟らかく)するのが好ましい。この焼鈍の際の加熱温度は、300~650℃であるのが好ましく、350~450℃であるのがさらに好ましい。また、この焼鈍の際の加熱時間は、15~90分間であるのが好ましく、30~60分間であるのがさらに好ましい。
なお、銀ペースト中の銀の焼結は、金属板10(または銅めっき皮膜20)に対して電子部品14を加圧しながら加熱することによって行うのが好ましい。この焼結の際の加熱温度は、200~400℃であるのが好ましく、220~300℃であるのがさらに好ましい。また、この焼結の際の加熱時間は、1~10分間であるのが好ましい。また、この焼結の際に加圧する圧力は、10MPa以下でよく、2~10MPaであるのが好ましく、3~8MPaであるのがさらに好ましい。
また、金属板10の他方の主面に、平面形状が略矩形のセラミックス基板16の一方の主面を接合し、このセラミックス基板16の他方の主面に、平面形状が略矩形の放熱用金属板(金属ベース板)18を接合してもよい。この場合、これらの金属板10とセラミックス基板16の間およびセラミックス基板16と金属ベース板18の間の接合の後に、金属板10の一方の主面(または銅めっき皮膜20の表面)(電子部品14が接合される面)の表面加工を行い、その主面(または銅めっき皮膜20の表面)に銀ペーストを塗布して電子部品14を配置した後、銀ペースト中の銀を焼結させて銀接合層12を形成し、この銀接合層12によって電子部品14を金属板10の一方の主面(または銅めっき皮膜20の表面)に接合すればよい。
なお、金属板10が銅板からなる場合には、金属板10とセラミックス基板16の間およびセラミックス基板16と金属ベース板18の間を直接接合してもよいし、ろう材を介して接合してもよい。これらの場合、金属板10とセラミックス基板16の間(およびセラミックス基板16と金属ベース板18の間)の接合の前に、金属板10の一方の主面(または銅めっき皮膜20の表面)の表面加工を行ってもよい。この場合、表面加工後に加熱処理による焼鈍をしなくても、接合の際に金属板10(または銅めっき皮膜20)が加熱されることにより、金属板10(または銅めっき皮膜20)のビッカース硬さHvを(小さくして)40以下に(軟らかく)することができる。
また、金属板10がアルミニウムまたはアルミニウム合金からなる場合には、金属板10とセラミックス基板16の間およびセラミックス基板16と金属ベース板18の間の接合では、(図示しない)鋳型内にセラミックス基板16を配置した後、セラミックス基板16の両主面に接触するようにアルミニウムまたはアルミニウム合金の溶湯を注湯した後に溶湯を冷却して固化させることにより、セラミックス基板16の各々の主面に金属板10および金属ベース板18を形成して直接接合させるのが好ましい。
また、表面加工は、(液体中に微粒子を含む研磨材スラリーを金属板の表面に噴射するウエットブラスト処理などの)ブラスト処理や、(砥粒としてラップ剤を介してラップ盤上に金属板を配置して金属板に圧力を加えてスライディングさせて研磨する)ラップ加工によって行うのが好ましい。
また、銀ペーストとして、400℃以下の温度で焼結可能な銀微粒子を含むペーストを使用することができ、ソルビン酸などの炭素数8以下(好ましくは6~8)の有機化合物で被覆された平均一次粒子径1~200nmの銀微粒子が分散媒(好ましくは極性溶媒)に分散した接合材(例えば、DOWAエレクトロニクス株式会社製のPA−HT−1503M−C)を使用するのが好ましい。このような銀微粒子が分散した分散媒に平均一次粒径(D50径)が0.5~3.0μmの(球状)銀粒子がさらに分散した接合材(例えば、DOWAエレクトロニクス株式会社製のPA−HT−1001L)を使用してもよい。
本発明による電子部品搭載基板の製造方法の実施の形態では、銀ペースト中の銀の焼結の際に5~7MPa程度の低い圧力で加圧しながら250~260℃程度の低温で加熱した場合でも、金属板(銅板または銅めっき板)上に(接合部に空隙などの接合欠陥が殆どなく)十分な接合強度で電子部品を接合することができる。
なお、本明細書中において、「表面粗さ」とは、JIS B0601(2001年)に基づいて算出した算術平均粗さRaをいう。また、「銀粒子の平均一次粒径(D50径)」とは、レーザー回折法により測定した銀粒子の50%粒径(D50径)(累積50質量%粒径)をいい、「銀微粒子の平均一次粒子径」とは、透過型電子顕微鏡写真(TEM像)による銀微粒子の一次粒子径の平均値をいう。
以下、本発明による電子部品搭載基板およびその製造方法の実施例について詳細に説明する。
次に、活性金属としてTiを含有するAg−Cu系ろう材を介して、(電子部品搭載用)金属板の一方の面を49mm×58mm×0.64mmのAlNからなるセラミックス基板の一方の主面に接合するとともに、(放熱用)金属ベース板をそのセラミックス基板の他方の面に接合して、金属−セラミックス接合基板を作製した。
次に、ウエットブラスト装置(マコー株式会社製の型番NFR−737)により、金属−セラミックス接合基板の(電子部品搭載用)金属板の他方の面の表面処理を行った。なお、ウエットブラスト装置の処理条件として、エアー圧0.20MPa、処理速度0.3m/分、投射距離20mm、投射角度90°とし、水中に砥粒として平均粒径40μmのアルミナ#320を15体積%含む研磨材スラリーを使用した。このウエットブラスト処理後の(電子部品搭載用)金属板について、超深度表面形状測定顕微鏡(株式会社キーエンス製のVK−8500)の線粗さ測定機能を使用して、金属板の表面の任意の100μm×100μmの正方形の領域の1辺に平行な長さ100μmの任意の直線に沿った線粗さを測定した結果から、JIS B0601(2001年)に基づいて表面粗さ(算術平均粗さRa)を算出したところ、0.81μmであった。なお、この金属板の他方の面のビッカース硬さHvを微小硬さ試験機(ヘルモートフィッシャー社製のフィッシャースコープHM2000)により300mN/10sの条件で測定したところ、97.8であった。
次に、銀微粒子と銀粒子が分散媒に分散した銀ペーストとして、ソルビン酸で被覆された平均一次粒子径100nmの銀微粒子(銀ナノ粒子)の凝集体の乾燥粉末と平均一次粒径(D50径)1.0μmの球状銀粒子の粉末(DOWAエレクトロニクス株式会社製の2−1C球状銀粉末)とを分散剤とともに分散媒に混合した銀ペースト(DOWAエレクトロニクス株式会社製のPA−HT−1001L)を用意した。この銀ペーストを上記の金属−セラミックス接合基板の(電子部品搭載用)金属板の(表面処理した)表面の電子部品搭載部分に塗布し、その上に電子部品として底面(裏面)が金めっきされた(13mm×13mmの大きさの)Siチップを配置し、大気中において、100℃で10分間予備加熱した後、Siゴムシートを介して7MPaで加圧しながら260℃で2分間加熱して、(電子部品搭載用)金属板にSiチップを接合した。
このようにして作製した電子部品搭載基板について、(電子部品搭載用)金属板とSiチップとの接合部を超音波探傷装置(SAT)(日立建機ファインテック株式会社製のFineSAT FS100II)により観察したところ、接合部の剥がれはなく、ボイドなどの接合欠陥がなく良好に接合されていた。
また、作製した電子部品搭載基板を−40℃で15分間保持した後に室温で1分間保持し、その後、175℃で15分間保持した後に室温で1分間保持するヒートサイクルの100サイクル後と300サイクル後の接合状態を確認したところ、100サイクル後の電子部品搭載基板では、(電子部品搭載用)金属板とSiチップが良好に接合されていたが、300サイクル後の電子部品搭載基板では、(わずかにボイドなどの接合欠陥による不良状態が見られたが)ほぼ良好に接合されていた。
このようにして作製した電子部品搭載基板について、実施例1と同様の方法により、(電子部品搭載用)金属板とSiチップとの接合部を観察したところ、接合部の剥がれはなく、良好に接合されていた。
また、作製した電子部品搭載基板について、実施例1と同様のヒートサイクル後の接合状態を確認したところ、100サイクル後と300サイクル後のいずれも、(電子部品搭載用)金属板とSiチップが良好に接合されていた。
比較例1
ウエットブラスト処理を行わなかった以外は、実施例1と同様の方法により、電子部品搭載基板を作製した。なお、(電子部品搭載用)金属板の(表面処理した)表面の表面粗さ(算術平均粗さRa)は0.09μmであり、(電子部品搭載用)金属板のビッカース硬さHvは35.4であった。
このようにして作製した電子部品搭載基板について、実施例1と同様の方法により、(電子部品搭載用)金属板とSiチップとの接合部を観察したところ、(わずかに不良状態が見られたが)ほぼ良好に接合されていた。
また、作製した電子部品搭載基板について、実施例1と同様のヒートサイクル後の接合状態を確認したところ、100サイクル後の電子部品搭載基板では、(わずかに不良状態が見られたが)ほぼ良好に接合されていたか、一部不良状態があったが接合部の剥がれまでには至っておらず、300サイクル後の電子部品搭載基板では、一部不良状態があったが接合部の剥がれまでには至っていなかった。
次に、実施例1と同様のウエットブラスト装置により(電子部品搭載用)金属板の表面処理を行った。なお、ウエットブラスト装置の処理条件として、エアー圧0.20MPa、処理速度0.3m/分、投射距離30mm、投射角度90°とし、水中に砥粒として平均粒径40μmのアルミナ#320を15体積%含む研磨材スラリーを使用した。このウエットブラスト処理後の(電子部品搭載用)金属板について、実施例1と同様の方法により、表面粗さ(算術平均粗さRa)を算出したところ、1.6μmであった。なお、この金属板のビッカース硬さHvは29.1であった。
次に、表面処理後の(電子部品搭載用)金属板の表面の脱脂および化学研磨を行い、この脱脂および化学研磨後の(電子部品搭載用)金属板を、25℃の亜鉛置換液(奥野製薬工業株式会社製のサブスターZN−111)に30秒間浸漬して亜鉛置換を行い、水洗し、硝酸に室温で30秒間浸漬して酸洗し、水洗し、上記と同じ亜鉛置換液に30秒間浸漬して2回目の亜鉛置換を行った後、水洗することにより、(電子部品搭載用)金属板のダブルジンケート処理(2回亜鉛置換)を行った。
次に、ダブルジンケート処理後の(電子部品搭載用)金属板を無電解ニッケルめっき液(奥野製薬工業株式会社製のトップニコロンTOM−LF)に浸漬することにより、(電子部品搭載用)金属板上に厚さ4~5μmのNiめっき層を形成した。
次に、Niめっき層を形成した(電子部品搭載用)金属板を無電解銅めっき液(奥野製薬工業株式会社製のAIS−アドカッパーCT)に浸漬することにより、電子部品搭載用)金属板上のNiめっき層上に厚さ0.4~0.5μmのCuめっき層を形成した。
なお、Cuめっき層を形成した後の(電子部品搭載用)金属板上のCuめっき層の表面の表面粗さ(算術平均粗さRa)は1.6μmであり、ビッカース硬さHvは29.1であった。
次に、接合の際の圧力を5MPaとした以外は、実施例1と同様の方法により、電子部品搭載用)金属板上のCuめっき層にSiチップを接合した。
このようにして作製した電子部品搭載基板について、実施例1と同様の方法により、(電子部品搭載用)金属板上のCuめっき層とSiチップとの接合部を観察したところ、接合部の剥がれはなく、良好に接合されていた。
また、作製した電子部品搭載基板を−40℃で15分間保持した後に室温で1分間保持し、その後、250℃で5分間保持した後に室温で1分間保持するヒートサイクルの100サイクル後、300サイクル後および1000サイクル後の接合状態を確認したところ、100サイクル後、300サイクル後および1000サイクル後のいずれも、(電子部品搭載用)金属板上のCuめっき層とSiチップが良好に接合されていた。
比較例2
表面処理としてウエットブラスト処理に代えてパフ研磨を行った以外は、実施例3と同様の方法により、電子部品搭載基板を作製した。なお、(電子部品搭載用)金属板上のCuめっき層の(表面処理した)表面の表面粗さ(算術平均粗さRa)は0.15μmであり、(電子部品搭載用)金属板のビッカース硬さHvは29.1であった。
このようにして作製した電子部品搭載基板について、実施例3と同様の方法により、(電子部品搭載用)金属板とSiチップとの接合部を観察したところ、接合部の剥がれはなく、良好に接合されていた。
また、作製した電子部品搭載基板について、実施例1と同様のヒートサイクル後の接合状態を確認したところ、100サイクル後の電子部品搭載基板では、(電子部品搭載用)金属板とSiチップが良好に接合され、300サイクル後の電子部品搭載基板では、(わずかに不良状態が見られたが)ほぼ良好に接合されていたか、一部不良状態があったが接合部の剥がれまでには至っておらず、1000サイクル後の電子部品搭載基板では、一部不良状態があったが接合部の剥がれまでには至っていなかった。
次に、作製した金属−セラミックス接合基板の(電子部品搭載用)金属板上のCuめっき層の表面の電子部品搭載部分に、実施例1と同様の銀ペーストを塗布し、その上に電子部品としてSiチップ(底面(裏面)に下地層として厚さ1μmのTiめっき層と(その上の)厚さ3μmのNiめっき層が形成されるとともにこれらの下地層が金めっきされた(7mm×7mmの大きさの)Siチップ)を配置し、窒素雰囲気中において、昇温速度1℃/sで昇温させた後、6MPaで加圧しながら250℃で5分間加熱して、(電子部品搭載用)金属板上のCuめっき層にSiチップを接合した。
このようにして作製した電子部品搭載基板について、(電子部品搭載用)金属板上のCuめっき層とSiチップとの接合部を超音波探傷装置(SAT)(日立建機ファインテック株式会社製のFineSAT FS100II)により観察したところ、接合部の剥がれはなく、良好に接合されていた。また、(電子部品搭載用)金属板とSiチップとの接合部のせん断強度をせん断強度測定器(ライジ社製のDAGE200)により測定したところ、40MPa以上であり、良好に接合されていた。
また、作製した電子部品搭載基板について、実施例3と同様のヒートサイクルの100サイクル後と500サイクル後と1000サイクル後の接合状態をSAMにより観察したところ、100サイクル後と500サイクル後と1000サイクル後のいずれも、(電子部品搭載用)金属板上のCuめっき層とSiチップが良好に接合されていた。また、実施例3と同様のヒートサイクルの100サイクル後と500サイクル後と1000サイクル後の(電子部品搭載用)金属板上のCuめっき層とSiチップとの接合部のせん断強度を測定したところ、100サイクル後と500サイクル後のせん断強度は40MPa以上、1000サイクル後のせん断強度は29MPaであり、良好に接合されていた。
Claims (16)
- 銅板または銅めっき板の一方の面に電子部品が搭載された電子部品搭載基板の製造方法において、銅板または銅めっき板の一方の面の表面粗さを0.4μm以上にする表面加工を行い、その面に銀ペーストを塗布して電子部品を配置した後、銀ペースト中の銀を焼結させて銀接合層を形成し、この銀接合層によって電子部品を銅板または銅めっき板の一方の面に接合することを特徴とする、電子部品搭載基板の製造方法。
- 前記表面加工がウエットブラスト処理であることを特徴とする、請求項1に記載の電子部品搭載基板の製造方法。
- 前記表面加工を行った後、前記銀ペーストを塗布する前に、前記銅板または銅めっき板を焼鈍することを特徴とする、請求項1に記載の電子部品搭載基板の製造方法。
- 前記焼鈍により前記銅板または銅めっき板のビッカース硬さHvを40以下にすることを特徴とする、請求項1に記載の電子部品搭載基板の製造方法。
- 前記焼結が、前記銅板または銅めっき板に対して前記電子部品を加圧しながら加熱することによって行われることを特徴とする、請求項1に記載の電子部品搭載基板の製造方法。
- 前記電子部品の前記銅板または銅めっき板の一方の面に接合される面が、金、銀およびパラジウムからなる群から選ばれる少なくとも一種の金属またはこれらの合金でめっきされていることを特徴とする、請求項1に記載の電子部品搭載基板の製造方法。
- 前記銅板または銅めっき板の他方の面にセラミックス基板の一方の面を接合することを特徴とする、請求項1に記載の電子部品搭載基板の製造方法。
- 前記セラミックス基板の他方の面に金属ベース板を接合することを特徴とする、請求項7に記載の電子部品搭載基板の製造方法。
- 銅板または銅めっき板の一方の面に電子部品が搭載された電子部品搭載基板において、銅板または銅めっき板の一方の面の表面粗さが0.4μm以上であり、この銅板または銅めっき板の一方の面に銀接合層により電子部品が接合されていることを特徴とする、電子部品搭載基板。
- 前記銅板または銅めっき板の一方の面の表面粗さが0.5~2.0μmであることを特徴とする、請求項9に記載の電子部品搭載基板。
- 前記銅板または銅めっき板の一方の面のビッカース硬さHvが100以下であることを特徴とする、請求項9または10に記載の電子部品搭載基板。
- 前記銅板または銅めっき板の一方の面のビッカース硬さHvが40以下であることを特徴とする、請求項9または10に記載の電子部品搭載基板。
- 前記電子部品の前記銅板または銅めっき板の一方の面に接合される面が、金、銀およびパラジウムからなる群から選ばれる少なくとも一種の金属またはこれらの合金でめっきされていることを特徴とする、請求項9に記載の電子部品搭載基板。
- 前記銀接合層が銀の焼結体を含むことを特徴とする、請求項9に記載の電子部品搭載基板。
- 前記銅板または銅めっき板の他方の面にセラミックス基板の一方の面が接合されていることを特徴とする、請求項9に記載の電子部品搭載基板。
- 前記セラミックス基板の他方の面に金属ベース板が接合されていることを特徴とする、請求項15に記載の電子部品搭載基板。
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