WO2015029608A1 - エレクトロルミネッセンス装置、及びその製造方法 - Google Patents
エレクトロルミネッセンス装置、及びその製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 239000010410 layer Substances 0.000 claims abstract description 272
- 239000012044 organic layer Substances 0.000 claims abstract description 211
- 238000007789 sealing Methods 0.000 claims abstract description 89
- 230000003247 decreasing effect Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 76
- 238000005401 electroluminescence Methods 0.000 claims description 69
- 230000007423 decrease Effects 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000003566 sealing material Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 171
- 230000000052 comparative effect Effects 0.000 description 32
- 238000010586 diagram Methods 0.000 description 26
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000035515 penetration Effects 0.000 description 6
- 230000008595 infiltration Effects 0.000 description 4
- 238000001764 infiltration Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000012466 permeate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229920002396 Polyurea Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Definitions
- the present invention relates to an electroluminescence device having an EL (electroluminescence) element, and a manufacturing method thereof.
- flat panel displays have been used in various products and fields, and further flat panel displays are required to have larger sizes, higher image quality, and lower power consumption.
- an organic EL display device equipped with an organic EL (electroluminescence) element using electroluminescence of an organic material is an all-solid-state type, can be driven at a low voltage, has high-speed response, and self-emission.
- an organic EL display device equipped with an organic EL (electroluminescence) element using electroluminescence of an organic material is an all-solid-state type, can be driven at a low voltage, has high-speed response, and self-emission.
- a thin-film organic EL element is provided on a substrate on which a TFT (thin film transistor) is provided.
- TFT thin film transistor
- an organic EL layer including a light emitting layer is laminated between a pair of electrodes.
- a TFT is connected to one of the pair of electrodes.
- An image is displayed by applying a voltage between the pair of electrodes to cause the light emitting layer to emit light.
- the density and thickness increase from the central portion to the edge portion of the organic EL display device. It has been proposed to provide an increasing sealing film. In this conventional organic EL display device, the penetration of moisture and oxygen in the lateral direction can be prevented.
- a sealing film in which organic layers and inorganic layers are alternately stacked is provided. It has been proposed that each organic layer other than the organic layer is formed in a narrower region than the inorganic layer. That is, in this conventional organic EL display device, the organic layers other than the uppermost organic layer, which are in close contact with the sealing glass substrate, are laminated to each other so that the end portions are not exposed to the outside. Covered by two inorganic layers. In this conventional organic EL display device, it is possible to prevent the deterioration of the organic layer due to exposure.
- an object of the present invention is to provide an electroluminescent device excellent in reliability and a method for manufacturing the same while reliably suppressing moisture permeation.
- an electroluminescence device is an electroluminescence device including a substrate and an electroluminescence element provided on the substrate, A sealing film for sealing the electroluminescence element;
- the sealing film is provided with two or more organic layers and two or more inorganic layers, In the sealing film, the organic layer and the inorganic layer are alternately provided, Each organic layer of the two or more layers is formed so that the film thickness at the end gradually decreases,
- the uppermost layer is provided with the inorganic layer, and the uppermost inorganic layer is provided so as to cover an end portion of the lower organic layer and an end portion of the lower inorganic layer. It is characterized by this.
- the electroluminescence device configured as described above, two or more organic layers and two or more inorganic layers are provided in the sealing film, and these organic layers and inorganic layers are alternately provided. . Further, each of the two or more organic layers is formed so that the film thickness at the end portion is gradually reduced.
- an inorganic layer is provided as the uppermost layer, and the uppermost inorganic layer is provided so as to cover an end portion of the lower organic layer and an end portion of the lower inorganic layer.
- each of the two or more inorganic layers is formed so that the film thickness at the end portions does not gradually decrease.
- the sealing property of the sealing film with respect to the electroluminescence element can be easily improved.
- a gradually decreasing region in which the film thickness is gradually decreased in each of the two or more organic layers is provided in an outer region of the electroluminescence element on the substrate.
- each of the two or more organic layers is formed so that the film thickness on the portion of the electroluminescence element is substantially uniform.
- the sealing property of the sealing film with respect to the electroluminescence element can be easily improved, and the performance of the electroluminescence device can be prevented from being deteriorated.
- a counter substrate facing the substrate; It is preferable that a frame-shaped sealing material that encloses the electroluminescence element is provided between the substrate and the counter substrate.
- a method for manufacturing an electroluminescence device including a substrate and an electroluminescence element provided on the substrate, Forming a first organic layer having a thickness gradually reduced at an end on the electroluminescence element or on the lowermost inorganic layer sealing the electroluminescence element; Forming an intermediate inorganic layer on the first organic layer; Forming a second organic layer having a gradually reduced thickness at an end on the inorganic layer of the intermediate layer; And a step of forming an uppermost inorganic layer so as to cover an end portion of the inorganic layer and each end portion of the first and second organic layers.
- the first organic layer whose thickness at the end portion is gradually reduced on the electroluminescence element or the lowermost inorganic layer in which the electroluminescence element is sealed.
- a step of forming an inorganic layer of an intermediate layer on the first organic layer, a step of forming a second organic layer having a gradually reduced thickness at an end portion on the inorganic layer of the intermediate layer, and an inorganic layer The step of forming the uppermost inorganic layer is sequentially performed so as to cover the end and each end of the first and second organic layers.
- the inorganic layer may be formed using a CVD method or an ALD method.
- the inorganic layer can be formed accurately and easily.
- At least the second organic layer of the first and second organic layers may be formed using a vapor deposition method or a sputtering method.
- At least the second organic layer can be formed accurately and easily.
- the first organic layer formed on the electroluminescence element may be formed using a wet method.
- the first organic layer can be formed accurately, easily and at low cost.
- a reverse-tapered mask is used in the step of forming the inorganic layer other than the uppermost inorganic layer and the first and second organic layers. Is preferred.
- the manufacturing process can be simplified and the manufacturing time can be shortened.
- FIG. 1 is a cross-sectional view illustrating an organic EL display device according to a first embodiment of the present invention.
- FIG. 2 is a cross-sectional view illustrating a specific configuration of the sealing film shown in FIG.
- FIG. 3 is an enlarged cross-sectional view showing an end portion of the sealing film.
- FIG. 4 is a top view of the organic EL display device.
- FIG. 5 is a diagram for explaining a mask used in the manufacturing process of the organic EL display device, and FIG. 5A shows a first process used for forming an inorganic layer and an organic layer other than the uppermost inorganic layer.
- FIG. 6 is a diagram for explaining main manufacturing steps of the organic EL display device, and FIGS. 6A to 6B show a series of main manufacturing steps.
- FIG. 7 is a diagram for explaining the main manufacturing process of the organic EL display device.
- FIGS. 7A to 7B are a series of steps performed subsequent to the process shown in FIG. 6B. The main manufacturing process is explained.
- FIG. 8 is a diagram for explaining a specific effect of the sealing film
- FIG. 8A is a diagram for explaining a specific problem in the first comparative example
- FIG. 8 is a diagram for explaining a specific problem in the second comparative example, and FIG. 8C is a diagram for explaining a specific effect of the sealing film.
- FIG. 9 is a cross-sectional view illustrating a specific configuration of the sealing film in the organic EL display device according to the second embodiment of the present invention.
- FIG. 10 is an enlarged cross-sectional view showing an end portion of the sealing film shown in FIG.
- FIG. 11 is a diagram for explaining main manufacturing steps of the organic EL display device shown in FIG. 9, and FIGS. 11 (a) to 11 (b) show a series of main manufacturing steps.
- FIG. 12 is a diagram for explaining the main manufacturing process of the organic EL display device shown in FIG. 9.
- FIGS. 12A to 12B are a continuation of the process shown in FIG.
- FIG. 13 is a diagram for explaining a specific effect of the sealing film shown in FIG. 9, and FIG. 13 (a) is a diagram for explaining a specific problem in the third comparative example.
- FIG. 13B is a diagram for explaining a specific problem in the fourth comparative example, and
- FIG. 13C is a diagram for explaining a specific effect of the sealing film shown in FIG.
- FIG. 14 is a cross-sectional view illustrating an organic EL display device according to the third embodiment of the present invention.
- FIG. 1 is a cross-sectional view illustrating an organic EL display device according to a first embodiment of the present invention.
- an organic EL display device 1 according to the present embodiment includes a TFT substrate 2 as a substrate and an organic EL element 4 as an electroluminescence element provided on the TFT substrate 2.
- the organic EL element 4 forms a rectangular pixel region A having a plurality of pixels, and the organic EL element 4 is sealed by the sealing film 14. Yes.
- the pixel area A constitutes the display unit of the organic EL display device 1 and displays information.
- the TFT substrate 2 is made of, for example, a glass material. Further, the TFT substrate 2 is provided with a base film (insulating film) 6 so as to cover the entire surface, and a TFT (thin film transistor) 7 is provided for each pixel in the pixel region A on the base film 6. ing. On the base film 6, wirings 8 including a plurality of source lines (signal lines) and a plurality of gate lines provided in a matrix are formed. A source driver and a gate driver are respectively connected to the source line and the gate line (not shown), and the TFT 7 for each pixel is driven in accordance with an image signal input from the outside.
- the TFT 7 functions as a switching element that controls the light emission of the corresponding pixel, and has a color of any one of red (R), green (G), and blue (B) formed by the organic EL element 4. The light emission at the pixel is controlled.
- the base film 6 is for preventing the characteristics of the TFT 7 from deteriorating due to impurity diffusion from the TFT substrate 2 to the TFT 7. If there is no concern about such deterioration, the base film 6 may be omitted. it can.
- an interlayer insulating film 9, an edge cover 10, and a first electrode 11 of the organic EL element 4 are formed on the TFT substrate 2, on the TFT substrate 2, an interlayer insulating film 9, an edge cover 10, and a first electrode 11 of the organic EL element 4 are formed.
- the interlayer insulating film 9 also functions as a planarizing film, and is provided on the base film 6 so as to cover the TFT 7 and the wiring 8.
- the edge cover 10 is formed on the interlayer insulating film 9 so as to cover the pattern end of the first electrode 11.
- the edge cover 10 also functions as an insulating layer for preventing a short circuit between the first electrode 11 and a second electrode 13 described later.
- the first electrode 11 is connected to the TFT 7 through a contact hole formed in the interlayer insulating film 9.
- the opening of the edge cover 10, that is, the portion where the first electrode 11 is exposed substantially constitutes the light emitting region of the organic EL element 4, and emits one of RGB color lights as described above.
- the organic EL display device 1 of the present embodiment is configured so that full color display can be performed.
- the organic EL layer 12 and the second electrode 13 are formed on the first electrode 11, and the organic EL element 4 is configured by the first electrode 11, the organic EL layer 12, and the second electrode 13.
- the organic EL element 4 is a light emitting element that can emit light with high luminance by, for example, low-voltage direct current driving, and includes a first electrode 11, an organic EL layer 12, and a second electrode 13.
- the organic EL layer 12 when the first electrode 11 is an anode, the organic EL layer 12 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like from the first electrode 11 side. Laminated (not shown), and further, a second electrode 13 as a cathode is formed. In addition to this description, a single layer may have two or more functions such as a hole injection layer / hole transport layer. In the organic EL layer 12, a carrier blocking layer or the like may be appropriately inserted.
- the layer order in the organic EL layer 12 is reversed from the above.
- the organic EL display device 1 is a bottom emission type in which light is emitted from the TFT substrate 2 side.
- the organic EL display device 1 is a top emission type that emits light from the sealing film 14.
- the organic EL element 4 is sealed by the sealing film 14, and moisture, oxygen, and the like permeate (infiltrate) from the outside by the sealing film 14. ) To prevent the organic EL element 4 from deteriorating.
- sealing film 14 of the present embodiment will be specifically described with reference to FIGS.
- FIG. 2 is a cross-sectional view illustrating a specific configuration of the sealing film shown in FIG.
- FIG. 3 is an enlarged cross-sectional view showing an end portion of the sealing film.
- FIG. 4 is a top view of the organic EL display device.
- the sealing film 14 of the present embodiment includes, for example, a total of five inorganic layers and organic layers, and these inorganic layers and organic layers are alternately provided. That is, the first inorganic layer 14 a is provided on the sealing film 14 of this embodiment so as to cover the organic EL element 4.
- the first organic layer 14b is provided on the first inorganic layer 14a
- the second inorganic layer 14c is provided on the first organic layer 14b.
- the second organic layer 14d is provided on the second inorganic layer 14c
- the third inorganic layer 14e is provided on the second organic layer 14d.
- the third inorganic layer 14 e which is the uppermost inorganic layer, includes the end portions of the lower first and second inorganic layers 14 a and 14 c and the lower first and second organic layers. It is provided so as to cover each end of the layers 14b and 14d. That is, in the sealing film 14, the inner surface of the third inorganic layer 14e is in contact with the end surfaces of the first and second inorganic layers 14a and 14c and the end surfaces of the first and second organic layers 14b and 14d. It is configured.
- each of the first to third inorganic layers 14a, 14c, and 14e is formed so that the film thickness at the end portions does not gradually decrease. That is, in each of the first to third inorganic layers 14a, 14c, and 14e, the film thickness at the end and the portion on the organic EL element 4 (that is, the portion of the pixel region A, hereinafter referred to as the central portion). The film thickness is substantially the same.
- the influence of the thickness of the organic EL element 4 is simply described, but the first inorganic layer 14 a is formed following the step of the base,
- the film thickness at the end portion 14a2 is formed substantially the same as the film thickness at the central portion 14a1.
- the second inorganic layer 14c is formed with substantially the same film thickness, and the film thickness at the central portion 14c1 and the film thickness at the end portion 14c2 are formed substantially the same. Yes.
- the film thickness is formed substantially the same, and the film thickness in the central part 14e1 and the film thickness in the end part 14e2 are formed substantially the same. ing.
- Each of the first to third inorganic layers 14a, 14c, and 14e is made of an inorganic film such as silicon nitride, silicon oxide, silicon oxynitride, or Al 2 O 3 .
- Each of the first and second organic layers 14b and 14d is formed so that the film thickness at the end thereof is gradually reduced, and the film thickness at the central part is formed to be substantially uniform. Has been. That is, each of the first and second organic layers 14b and 14d is formed so that the film thickness at the end gradually decreases from the film thickness at the central part (the part on the organic EL element 4). ing.
- the first organic layer 14b is formed such that the film thickness at the end 14b2 gradually decreases from the film thickness at the central part 14b1.
- the second organic layer 14d is formed so that the film thickness at the end 14d2 gradually decreases from the film thickness at the central part 14d1.
- the film thickness at the end surface of the end portion 14b2 and the film thickness at the end surface of the end portion 14d2 are adjusted to, for example, several to several tens of nm. Accordingly, the first organic layer 14b is configured to prevent the first and second inorganic layers 14a and 14c from being in direct contact with each other and stacked as much as possible, and the second organic layer 14d includes the second organic layer 14d. In addition, the third inorganic layers 14c and 14e are configured to prevent as much as possible from laminating in direct contact with each other.
- first and second inorganic layers 14a and 14c are prevented from overlapping each other in the direction perpendicular to the surface of the TFT substrate 2 by the first organic layer 14b, and the second and third inorganic layers 14a and 14c are prevented.
- the layers 14c and 14e are prevented from overlapping each other in the direction perpendicular to the surface of the TFT substrate 2 by the second organic layer 14d.
- each of the first and second organic layers 14b and 14d is formed above the TFT substrate 2 so that the end surface of the end portion 14b2 and the end surface of the end portion 14d2 coincide with each other as illustrated in FIG. Yes.
- a gradually decreasing region D in which the film thickness gradually decreases is provided in an outer region of the organic EL element 4 on the TFT substrate 2. ing. That is, in each of the first and second organic layers 14b and 14d, the uniform areas of the central portions 14b1 and 14d1 in which the film thickness corresponding to the rectangular pixel area A is substantially uniform, and the uniform areas In addition, as shown by a one-dot chain line B in FIG. 4, the film thickness is substantially uniform in the intermediate region set outside by a predetermined dimension.
- end surface of the end portion 14b2 and the end surface of the end portion 14d2 are provided outside the uniform region and the intermediate region as indicated by a one-dot chain line C in FIG. It is provided in the outer region of (organic EL element 4).
- the first and second organic layers 14b and 14d are made of organic films such as acrylate, polyurea, parylene, polyimide, and polyamide.
- the first and second inorganic layers 14a and 14c and the first and second organic layers 14b and 14d use one mask as will be described in detail later. And formed on the TFT substrate 2.
- FIG. 5 is a diagram for explaining a mask used in the manufacturing process of the organic EL display device, and FIG. 5A shows a first process used for forming an inorganic layer and an organic layer other than the uppermost inorganic layer. It is a top view which shows a mask, FIG.5 (b) is a top view which shows the 2nd mask used for the formation process of the uppermost inorganic layer.
- FIG. 6 is a diagram for explaining main manufacturing steps of the organic EL display device, and FIGS. 6A to 6B show a series of main manufacturing steps.
- FIG. 7 is a diagram for explaining the main manufacturing process of the organic EL display device.
- FIGS. 7A to 7B are a series of steps performed subsequent to the process shown in FIG. 6B. The main manufacturing process is explained.
- the mask M1 is used in the process of forming the first and second inorganic layers 14a and 14c and the first and second organic layers 14b and 14d, and is configured in an inversely tapered shape. ing. That is, the mask M1 is configured such that the opening is widened when viewed from the supply side of a material such as a film forming gas.
- a material such as a film forming gas.
- an opening K1 defined by the four sides M1a is provided on the surface facing the material supply side during film formation. It has been.
- openings K2 defined by the four sides M1b are provided on the surface opposed to the TFT substrate 2 side during film formation.
- the opening K2 on the TFT substrate 2 side is configured to have an opening larger than the opening K1, and the mask M1 is formed in an inversely tapered shape. That is, the mask M1 has a reverse tapered opening cross section as shown in FIG.
- the mask M2 is used in the step of forming the third inorganic layer 14e and has a uniform opening K3. That is, as shown in FIG. 5B, the mask M2 is provided with the opening K3 defined by the four sides M2a.
- the opening K3 is configured to have an opening larger than the openings K1 and K2 of the mask M1.
- a step of forming the first inorganic layer 14a on the organic EL element 4 on the TFT substrate 2 is performed. That is, as shown in FIG. 6A, the mask M1 is disposed so that the lower surface on which the side M1b is formed faces the TFT substrate 2, and the organic EL element 4 is disposed in the opening K2. It is arranged on the base film 6 of the TFT substrate 2 so as to be arranged. Then, the first inorganic layer 14 a is formed so as to cover the organic EL element 4 by using, for example, a CVD (Chemical Vapor Deposition) method or an ALD (Atomic Layer Deposition) method.
- CVD Chemical Vapor Deposition
- ALD Atomic Layer Deposition
- the CVD method and the ALD method are film formation methods with high coverage (coverability), and the first inorganic layer 14a is formed such that the height from the base is constant by film formation using these methods. Can be formed accurately and easily (the same applies to the second and third inorganic layers 14c and 14e).
- a first organic layer 14b having a thickness gradually reduced at the end is formed on the first inorganic layer 14a which is the lowermost layer in which the organic EL element 4 is sealed.
- the process to perform is performed. That is, in this step, as in the step shown in FIG. 6A, the mask M1 is used.
- the first organic layer 14b is changed to the first organic layer 14b. It is formed on the inorganic layer 14a.
- the vapor deposition method and the sputtering method have a directivity in the flying direction of the film formation particles, and therefore, by using an inversely tapered mask M1, the side is defined by the side M1a formed on the upper surface of the mask M1.
- the film-forming particles flying from the inside of the upper opening K1 contribute to the film formation at the left end of the opening K1, but the film-forming particles flying from the outside of the opening K1 are formed at the left end. Does not contribute to the membrane. Due to such a phenomenon, the first organic layer 14b whose thickness gradually decreases at the end can be accurately and easily formed (the same applies to the second organic layer 14d).
- the second inorganic layer 14c is changed to the first inorganic layer 14c.
- the second organic layer 14d is formed on the second inorganic layer 14c by using a vapor deposition method or a sputtering method.
- a CVD method, an ALD method, or the like is used. Therefore, even when the mask M1 is used, the film can be formed with a substantially uniform film thickness.
- the degree of gradual decrease in film thickness is controlled by adjusting the taper angle of the mask M1 (the angle formed by the side M1a and the side M1b). can do. Further, for example, by adjusting the position of the film-forming particle supply source (for example, so-called oblique vapor deposition in which vapor deposition is performed obliquely with respect to the opening K1, etc.), the gradual decrease in film thickness at the end is controlled. can do. In this case, the reverse tapered mask M1 is not necessarily used.
- the first and second layers can be realized.
- the CVD method or the ALD method may be used in the steps of forming the first and second organic layers 14b and 14d.
- the first, second, and third inorganic layers 14a, 14c, and 14e and the first and second organic layers 14b and 14d can be consistently formed in the same film formation chamber, and throughput can be improved. It is possible to reduce the generation of foreign matters mixed during improvement or switching of the film formation chamber.
- the end portions of the first and second inorganic layers 14a and 14c and the end portions of the first and second organic layers 14b and 14d are covered so as to cover the ends.
- a step of forming the third inorganic layer 14e as the upper layer is performed. That is, in the mask M2, as shown in FIG. 7B, the first and second inorganic layers 14a and 14c and the first and second organic layers 14b and 14d are disposed inside the opening K3. Thus, it is disposed on the base film 6 of the TFT substrate 2.
- the third inorganic layer 14e is formed by the end portions of the first and second inorganic layers 14a and 14c and the first and second organic layers 14b and 14d. It forms so that each edge part may be covered.
- the organic EL display device 1 of the present embodiment is completed.
- the first and second organic layers 14b and 14d and the first to third inorganic layers 14a, 14c, and 14e are alternately provided.
- the first and second organic layers 14b and 14d are formed so that the film thicknesses at the end portions 14b2 and 14d2 are gradually reduced.
- the third inorganic layer 14e is provided as the uppermost layer, and the third inorganic layer 14e includes the first and second organic layers 14b and 14d as the lower layers.
- FIG. 8 is a diagram for explaining a specific effect of the sealing film
- FIG. 8A is a diagram for explaining a specific problem in the first comparative example
- FIG. 8 is a diagram for explaining a specific problem in the second comparative example
- FIG. 8C is a diagram for explaining a specific effect of the sealing film.
- a base film 52 and an organic EL element 53 are sequentially provided on the TFT substrate 51.
- the first inorganic layer 54 is provided so as to cover the organic EL element 53.
- the first organic layer 55, the second inorganic layer 56, the second organic layer 57, and the third inorganic layer 58 are sequentially provided on the first inorganic layer 54.
- the end surfaces of the first and second organic layers 55 and 57 are exposed to the outside.
- the second inorganic layer 56 underneath is blocked. Even if pinholes are generated in the second inorganic layer 56, they are diffused by the first organic layer 55 and further blocked by the first inorganic layer 54. That is, in order for the moisture indicated by the arrow H1 to reach the organic EL element 53, diffusion in the second organic layer 57, passage of pinholes in the second inorganic layer 56, and first organic layer It is necessary to go through diffusion in 55 and pass pinholes in the first inorganic layer 54.
- a base film 62 and an organic EL element 63 are sequentially provided on the TFT substrate 61.
- the first inorganic layer 64 is provided so as to cover the organic EL element 63.
- a first organic layer 65, a second inorganic layer 66, and a second organic layer 67 are sequentially provided on the first inorganic layer 64.
- the third inorganic layer 68 covers the end faces of the first and second inorganic layers 64 and 66 and the end faces of the first and second organic layers 65 and 67. Is provided.
- the second organic layer 67 does not enter unless it passes through the pinhole of the third inorganic layer 68. Does not reach the organic EL element 63. Moreover, even if it reaches on the organic EL element 63, it is blocked by the second inorganic layer 66 below it as shown by an arrow H6 in FIG. 8B. That is, in the second comparative example, the intrusion of moisture is suppressed as compared with the infiltration of moisture indicated by the arrow H1 in FIG.
- the first organic layer 65 does not enter unless it passes through the pinhole of the third inorganic layer 68. Therefore, in the second comparative example, the intrusion of moisture is suppressed as compared with the infiltration of moisture indicated by the arrow H3 in FIG.
- the first organic layer 14b other than the uppermost second organic layer 14d penetrates the second and third inorganic layers 14c and 14e. Otherwise, moisture cannot reach the first organic layer 14b. Therefore, even if pinholes are generated in the third inorganic layer 14e, the penetration of moisture can be effectively suppressed.
- the gradually decreasing region D in which the film thickness is gradually decreased is provided in the outer region of the organic EL element 4 on the TFT substrate 2. .
- optical characteristics such as transmittance and viewing angle characteristics vary depending on the display region (or light emitting region, etc.), so that the performance of the electroluminescence device (for example, the display quality of the organic EL display device 1 and the light emission of the organic EL lighting device). Quality).
- the performance of the electroluminescence device for example, the display quality of the organic EL display device 1 and the light emission of the organic EL lighting device. Quality.
- the optical characteristics of the display region (or the light emitting region, etc.) become uniform, so that the performance of the electroluminescence device does not deteriorate. .
- the step of forming the first inorganic layer 14a on the organic EL element 4 on the TFT substrate 2, and the end of the first inorganic layer 14a Forming a first organic layer 14b having a gradually reduced thickness at a portion, forming a second inorganic layer 14c as an intermediate layer on the first organic layer 14b, and a second inorganic layer 14c
- a step of forming a second organic layer 14d having a gradually reduced thickness at the end, and each end of the first and second inorganic layers 14a and 14c, the first and second organic layers 14b, and A step of forming a third inorganic layer 14e as the uppermost layer is performed so as to cover each end of 14d.
- a reverse taper is formed in the step of forming the first and second inorganic layers 14a and 14c other than the uppermost third inorganic layer 14e and the first and second organic layers 14b and 14d.
- a mask M1 is used in the step of forming the first and second inorganic layers 14a and 14c other than the uppermost third inorganic layer 14e and the first and second organic layers 14b and 14d.
- FIG. 9 is a cross-sectional view illustrating a specific configuration of the sealing film in the organic EL display device according to the second embodiment of the present invention.
- FIG. 10 is an enlarged cross-sectional view showing an end portion of the sealing film shown in FIG.
- the main difference between the present embodiment and the first embodiment is that a first organic layer is provided on the organic EL element in the sealing film, and the first organic layer is provided on the first organic layer.
- the second inorganic layer and the second organic layer are provided, and the second inorganic layer as the uppermost inorganic layer is provided.
- symbol is attached
- the organic EL display device 1 of the present embodiment includes, for example, a total of four inorganic layers and organic layers as the sealing film 14 that seals the organic EL element 4. These inorganic layers and organic layers are alternately provided. That is, the first organic layer 14 f is provided on the sealing film 14 of this embodiment so as to cover the organic EL element 4. The first inorganic layer 14g is provided on the first organic layer 14f, and the second organic layer 14h is provided on the first inorganic layer 14g. Furthermore, the second inorganic layer 14i is provided on the second organic layer 14h.
- each of the second inorganic layer 14i which is the uppermost inorganic layer, includes an end portion of the lower first inorganic layer 14g and the lower first and second organic layers 14f and 14h. It is provided so as to cover the end. That is, the sealing film 14 is configured such that the inner surface of the second inorganic layer 14i is in contact with the end surface of the first inorganic layer 14g and the end surfaces of the first and second organic layers 14f and 14h.
- first and second inorganic layers 14g and 14i are formed so that the film thickness at the end portions does not gradually decrease. That is, in each of the first and second inorganic layers 14g and 14i, the film thickness at the end portion and the film thickness at the central portion (portion on the organic EL element 4) are substantially the same. Is formed.
- the film thickness is substantially the same, and the film thickness at the central part 14g1 and the end part 14g2 Are formed with substantially the same film thickness.
- the film thickness in the second inorganic layer 14i is formed substantially the same, and the film thickness in the central part 14i1 and the film thickness in the end part 14i2 are formed substantially the same. ing.
- Each of the first and second inorganic layers 14g and 14i is formed of an inorganic film such as silicon nitride, silicon oxide, silicon oxynitride, or Al 2 O 3 as in the first embodiment. ing.
- Each of the first and second organic layers 14f and 14h is formed so that the film thickness at the end portion thereof gradually decreases, and the film thickness at the central portion thereof is formed to be substantially uniform. Has been. That is, each of the first and second organic layers 14h and 14h is formed such that the film thickness at the end portion is gradually decreased from the film thickness at the inner portion of the end portion and becomes thinner.
- the organic EL element 4 covered by the first organic layer 14f between the central portion 14f1 and the end portion 14f2. Is provided with a predetermined intermediate region having a thickness obtained by adding the thickness at the central portion 14f1 having a substantially uniform thickness, and the thickness at the end portion 14f2 is determined in the intermediate region. It is formed so as to gradually decrease from the film thickness.
- the second organic layer 14h is formed so that the film thickness at the end 14h2 gradually decreases from the film thickness at the central part 14h1.
- the intermediate region of the first organic layer 14f is different from the intermediate regions of the first and second organic layers 14b and 14d of the first embodiment in that the film thickness is the center. It is configured to be thicker than the film thickness at the portion 14f1.
- the film thickness at the end face of the end portion 14f2 and the film thickness at the end face of the end portion 14h2 are, for example, several, as in the first embodiment. It is adjusted to ⁇ tens of nm. Accordingly, the second organic layer 14h is configured to prevent the first and second inorganic layers 14g and 14i from being stacked on each other as much as possible. In other words, the first and second inorganic layers 14g and 14i are prevented from overlapping each other in the direction perpendicular to the surface of the TFT substrate 2 by the second organic layer 14h.
- each of the first and second organic layers 14f and 14h is formed above the TFT substrate 2 so that the end surface of the end portion 14f2 and the end surface of the end portion 14h2 coincide with each other. Yes.
- the end surface of the end portion 14f2 of the first organic layer 14f may be configured to be positioned closer to the organic EL element 4 than the end surface of the end portion 14h2 of the second organic layer 14h. Good.
- each of the first and second organic layers 14f and 14h is formed of an organic film such as acrylate, polyurea, parylene, polyimide, polyamide, or the like, as in the first embodiment.
- FIG. 11 is a diagram for explaining a main manufacturing process of the organic EL display device shown in FIG. 9, and FIGS. 11 (a) to 11 (b) show a series of main manufacturing processes.
- FIG. 12 is a diagram for explaining the main manufacturing process of the organic EL display device shown in FIG. 9.
- FIGS. 12A to 12B are a continuation of the process shown in FIG. A series of main manufacturing steps to be performed is described.
- the first organic layer 14f whose thickness at the end is gradually reduced is formed on the organic EL element 4 on the TFT substrate 2.
- a forming step is performed. That is, in this step, unlike the first embodiment, the first organic layer 14f is formed by using a wet method such as a printing method without using the mask M1.
- the first organic layer 14f is formed by applying a liquefied organic layer precursor and solidifying it by UV exposure or heat treatment (cure baking).
- the material include UV resin and epoxy resin.
- the coating end can be formed into a gentle film thickness decreasing shape by surface tension.
- the film thickness gradually decreasing shape at the end can be controlled also by reflow during the heat treatment.
- the first organic layer 14f may be formed by, for example, vapor deposition or sputtering using the mask M1.
- a step of forming a first inorganic layer 14g as an intermediate layer on the first organic layer 14f is performed. That is, in this step, as in the step shown in FIG. 6A, the mask M1 is used. For example, by using the CVD method, the ALD method, or the like, the first inorganic layer 14g is changed to the first layer 14g. It is formed on the organic layer 14f. In the step of forming the first inorganic layer 14g, a CVD method, an ALD method, or the like is used. Therefore, even when the mask M1 is used, the film can be formed with a substantially uniform film thickness.
- a step of forming a second organic layer 14h having a thickness gradually reduced at the end portion is performed on the first inorganic layer 14g. That is, in these steps, as in the step shown in FIG. 11B, the mask M1 is used. For example, by using a vapor deposition method, a sputtering method, or the like, the second organic layer 14h becomes the first organic layer 14h. Formed on the inorganic layer 14g.
- the second layer as the uppermost layer is formed so as to cover the end of the first inorganic layer 14g and the ends of the first and second organic layers 14f and 14h.
- a step of forming the inorganic layer 14i is performed. That is, in this step, the mask M2 is used as in the step shown in FIG. Then, by using, for example, a CVD method or an ALD method, the second inorganic layer 14i covers the end portion of the first inorganic layer 14g and the end portions of the first and second organic layers 14f and 14h. Formed.
- the organic EL display device 1 of the present embodiment is completed.
- the present embodiment can achieve the same operations and effects as the first embodiment.
- FIG. 13 is a diagram for explaining a specific effect of the sealing film shown in FIG. 9, and FIG. 13 (a) is a diagram for explaining a specific problem in the third comparative example.
- FIG. 13B is a diagram for explaining a specific problem in the fourth comparative example, and
- FIG. 13C is a diagram for explaining a specific effect of the sealing film shown in FIG.
- a base film 72 and an organic EL element 73 are sequentially provided on the TFT substrate 71.
- the first organic layer 74 is provided so as to cover the organic EL element 73.
- a first inorganic layer 75, a second organic layer 76, and a second inorganic layer 77 are sequentially provided on the first organic layer 74.
- the end surfaces of the first and second organic layers 74 and 76 are exposed to the outside.
- the first inorganic layer 75 underneath is blocked. Even if a pinhole is generated in the first inorganic layer 75, it is diffused by the first organic layer 74 and reaches the organic EL element 73. That is, in order for the moisture indicated by the arrow H11 to reach the organic EL element 73, diffusion in the second organic layer 76, passage of pinholes in the first inorganic layer 75, and first organic It is necessary to go through diffusion in layer 74.
- the base film 82 and the organic EL element 83 are sequentially provided on the TFT substrate 81.
- the first organic layer 84 is provided so as to cover the organic EL element 83.
- the first inorganic layer 85 and the second organic layer 86 are sequentially provided on the first organic layer 84.
- the second inorganic layer 87 is provided so as to cover the end faces of the first and second organic layers 84 and 86 and the end face of the first inorganic layer 85.
- the second organic layer 86 does not enter unless it passes through the pinhole of the second inorganic layer 87. Does not reach the organic EL element 83. Moreover, even if it reaches on the organic EL element 83, it is blocked by the first inorganic layer 85 therebelow as indicated by an arrow H16 in FIG. That is, in the fourth comparative example, the ingress of moisture is suppressed as compared with the invasion of moisture indicated by the arrow H11 in FIG.
- the first organic layer 84 does not enter unless it passes through the pinhole of the second inorganic layer 87. Therefore, in the fourth comparative example, the intrusion of moisture is suppressed as compared with the infiltration of moisture indicated by the arrow H13 in FIG.
- the first organic layer 14f other than the uppermost second organic layer 14h penetrates the first and second inorganic layers 14g and 14i. Otherwise, moisture cannot reach the first organic layer 14f. Therefore, even if pinholes are generated in the second inorganic layer 14i, moisture penetration can be effectively suppressed.
- the first organic layer 14f is formed using a wet method, the first organic layer 14f can be formed accurately, easily, and at low cost.
- the first organic layer 14f can be formed thick, which makes it easier to cover the extraneous matter on the organic EL element 4, and the stress of the first and second inorganic layers 14g and 14i. Can be further suppressed from being added to the organic EL element 4. As a result, in this embodiment, it is possible to improve the manufacturing yield of the organic EL display device 1.
- FIG. 14 is a cross-sectional view illustrating an organic EL display device according to the third embodiment of the present invention.
- the main difference between this embodiment and the first embodiment is that on the organic EL element side, the organic EL element is disposed between the counter substrate facing the TFT substrate and between the TFT substrate and the counter substrate.
- the sealing resin as a frame-shaped sealing material to be sealed is provided.
- symbol is attached
- the counter substrate 3 is made of, for example, a glass material.
- the sealing resin 5 is made of, for example, a resin such as an epoxy resin in which spacers that define a cell gap between the TFT substrate 2 and the counter substrate 3 and inorganic particles are dispersed. Moreover, in the sealing resin 5, moisture permeability can be further reduced by dispersing inorganic particles.
- FIG. 14 shows a configuration in which the sealing resin 5 is formed on the sealing film 14. In addition to this configuration, the sealing film 14 is formed on the inner side of the sealing resin 5 and sealed. The structure which forms the stop resin 5 on the base film 6 may be sufficient.
- an inert gas is sealed in a space between the counter substrate 3, the sealing resin 5, and the sealing film 13.
- a desiccant or an oxygen absorbent may be provided or a resin may be filled. Moreover, you may make this resin contain a desiccant and an oxygen absorber.
- an organic EL element is used as an electroluminescence element.
- the present invention is not limited to this, and for example, an inorganic EL element having an inorganic compound may be used.
- the present invention is not limited to this, and can be applied to an illumination device such as a backlight device.
- the sealing film two or more organic layers and two or more inorganic layers are provided, and in the sealing film, the organic layers and the inorganic layers are alternately provided, and two or more layers are provided.
- Each of the organic layers is formed so that the film thickness at the end thereof gradually decreases, and the sealing film is provided with an inorganic layer at the uppermost layer, and the uppermost inorganic layer includes the lower organic layer and There is no limitation as long as it is provided so as to cover each end of the lower inorganic layer.
- a sealing film composed of a total of six or more organic layers and inorganic layers can be used.
- each inorganic layer of two or more layers has been described so that the film thickness at the end thereof is not gradually reduced.
- the present invention is not limited to this, and each inorganic layer The layer may be formed so that the film thickness at the end gradually decreases.
- the sealing property of the sealing film with respect to the electroluminescent element is greater in the case where each of the inorganic layers of two or more layers is formed so that the film thickness at the end portion does not gradually decrease. Is preferable in that it can be easily improved. Further, it is also preferable in that the formation of the inorganic layer, and hence the manufacture of the electroluminescence device can be simplified easily.
- the present invention is not limited to this, and a flexible material such as plastic is used.
- a substrate or a counter substrate may be configured.
- a display device or the like having a display surface formed in a curved surface shape can be easily configured.
- problems such as peeling of the inorganic layer due to stress applied at the time of bending are generated. It can prevent as much as possible.
- the present invention is useful for an electroluminescent device excellent in reliability and its manufacturing method while reliably suppressing the penetration of moisture.
- Organic EL display device TFT substrate (substrate) 3 Counter substrate 4 Organic EL device (electroluminescence device) 5 Sealing resin (sealing material) 14 Sealing film 14a First inorganic layer (lower inorganic layer) 14b First organic layer (lower organic layer) 14b1 Center portion 14b2 End portion 14c Second inorganic layer (lower inorganic layer) 14d Second organic layer (lower organic layer) 14d1 center portion 14d2 end portion 14e third inorganic layer (uppermost inorganic layer) 14f First organic layer (lower organic layer) 14f1 center portion 14f2 end portion 14g first inorganic layer (lower inorganic layer) 14h Second organic layer (lower organic layer) 14h1 Central portion 14h2 End portion 14i Second inorganic layer (uppermost inorganic layer) M1 (reverse taper) mask D Decreasing region
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Abstract
Description
前記エレクトロルミネッセンス素子を封止する封止膜を備え、
前記封止膜には、2層以上の有機層及び2層以上の無機層が設けられるとともに、
前記封止膜では、前記有機層と前記無機層とが交互に設けられ、
前記2層以上の各有機層では、その端部での膜厚が漸減するように形成され、
前記封止膜では、その最上層に前記無機層が設けられるとともに、当該最上層の無機層は下層の前記有機層の端部及び下層の前記無機層の端部を覆うように設けられていることを特徴とするものである。
前記基板と前記対向基板との間で、前記エレクトロルミネッセンス素子を封入する枠状のシール材を備えていることが好ましい。
前記エレクトロルミネッセンス素子上、または前記エレクトロルミネッセンス素子を封止した最下層の無機層上に、端部での膜厚が漸減した第1の有機層を形成する工程と、
前記第1の有機層上に中間層の無機層を形成する工程と、
前記中間層の無機層上に、端部での膜厚が漸減した第2の有機層を形成する工程と、
前記無機層の端部と前記第1及び第2の有機層の各端部を覆うように、最上層の無機層を形成する工程とを具備していることを特徴とするものである。
図1は、本発明の第1の実施形態にかかる有機EL表示装置を説明する断面図である。図1において、本実施形態の有機EL表示装置1は、基板としてのTFT基板2、及びこのTFT基板2上に設けられたエレクトロルミネッセンス(Electro Luminescence)素子としての有機EL素子4を備えている。
図9は、本発明の第2の実施形態にかかる有機EL表示装置での封止膜の具体的な構成を説明する断面図である。図10は、図9に示した封止膜の端部を示す拡大断面図である。
図14は、本発明の第3の実施形態にかかる有機EL表示装置を説明する断面図である。
2 TFT基板(基板)
3 対向基板
4 有機EL素子(エレクトロルミネッセンス素子)
5 封止樹脂(シール材)
14 封止膜
14a 第1の無機層(下層の無機層)
14b 第1の有機層(下層の有機層)
14b1 中央部
14b2 端部
14c 第2の無機層(下層の無機層)
14d 第2の有機層(下層の有機層)
14d1 中央部
14d2 端部
14e 第3の無機層(最上層の無機層)
14f 第1の有機層(下層の有機層)
14f1 中央部
14f2 端部
14g 第1の無機層(下層の無機層)
14h 第2の有機層(下層の有機層)
14h1 中央部
14h2 端部
14i 第2の無機層(最上層の無機層)
M1 (逆テーパ状の)マスク
D 漸減領域
Claims (10)
- 基板と、前記基板上に設けられたエレクトロルミネッセンス素子を備えたエレクトロルミネッセンス装置であって、
前記エレクトロルミネッセンス素子を封止する封止膜を備え、
前記封止膜には、2層以上の有機層及び2層以上の無機層が設けられるとともに、
前記封止膜では、前記有機層と前記無機層とが交互に設けられ、
前記2層以上の各有機層では、その端部での膜厚が漸減するように形成され、
前記封止膜では、その最上層に前記無機層が設けられるとともに、当該最上層の無機層は下層の前記有機層の端部及び下層の前記無機層の端部を覆うように設けられている、
ことを特徴とするエレクトロルミネッセンス装置。 - 前記2層以上の各無機層では、その端部での膜厚が漸減しないように形成されている請求項1に記載のエレクトロルミネッセンス装置。
- 前記2層以上の各有機層では、その膜厚が漸減している漸減領域は前記基板上の前記エレクトロルミネッセンス素子の外側領域に設けられている請求項1または2に記載のエレクトロルミネッセンス装置。
- 前記2層以上の各有機層では、その前記エレクトロルミネッセンス素子上の部分での膜厚が実質的に均一となるように形成されている請求項1~3のいずれか1項に記載のエレクトロルミネッセンス装置。
- 前記エレクトロルミネッセンス素子側で、前記基板に対向する対向基板と、
前記基板と前記対向基板との間で、前記エレクトロルミネッセンス素子を封入する枠状のシール材を備えている請求項1~4のいずれか1項に記載のエレクトロルミネッセンス装置。 - 基板と、前記基板上に設けられたエレクトロルミネッセンス素子を備えたエレクトロルミネッセンス装置の製造方法であって、
前記エレクトロルミネッセンス素子上、または前記エレクトロルミネッセンス素子を封止した最下層の無機層上に、端部での膜厚が漸減した第1の有機層を形成する工程と、
前記第1の有機層上に中間層の無機層を形成する工程と、
前記中間層の無機層上に、端部での膜厚が漸減した第2の有機層を形成する工程と、
前記無機層の端部と前記第1及び第2の有機層の各端部を覆うように、最上層の無機層を形成する工程と
を具備していることを特徴とするエレクトロルミネッセンス装置の製造方法。 - 前記無機層は、CVD法またはALD法を用いて、形成されている請求項6に記載のエレクトロルミネッセンス装置の製造方法。
- 前記第1及び第2の有機層のうち、少なくとも前記第2の有機層は、蒸着法またはスパッタ法を用いて、形成されている請求項6または7に記載のエレクトロルミネッセンス装置の製造方法。
- 前記エレクトロルミネッセンス素子上に形成された前記第1の有機層は、ウェット法を用いて、形成されている請求項6~8のいずれか1項に記載のエレクトロルミネッセンス装置の製造方法。
- 前記最上層の無機層以外の前記無機層、及び前記第1及び第2の有機層を形成する工程では、逆テーパ状のマスクが用いられている請求項6~8のいずれか1項に記載のエレクトロルミネッセンス装置の製造方法。
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