WO2015015982A1 - 封止用シート、及び、当該封止用シートを用いた半導体装置の製造方法 - Google Patents
封止用シート、及び、当該封止用シートを用いた半導体装置の製造方法 Download PDFInfo
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- WO2015015982A1 WO2015015982A1 PCT/JP2014/067396 JP2014067396W WO2015015982A1 WO 2015015982 A1 WO2015015982 A1 WO 2015015982A1 JP 2014067396 W JP2014067396 W JP 2014067396W WO 2015015982 A1 WO2015015982 A1 WO 2015015982A1
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
Definitions
- the present invention relates to a sealing sheet and a method for manufacturing a semiconductor device using the sealing sheet.
- a sealing resin for example, a thermosetting resin sheet is known (see, for example, Patent Document 1).
- the sealing resin is for sealing, the laser marking property may be poor.
- This invention is made
- the objective is to provide the manufacturing method of the semiconductor device using the sheet
- the present invention is a thermosetting sealing sheet used for sealing an electronic device,
- the surface roughness (Ra) of one surface is 3 ⁇ m or less.
- the surface roughness (Ra) of one surface is 3 ⁇ m or less. Since the surface roughness (Ra) of the one surface is as flat as 3 ⁇ m or less, the laser marking property of the one surface is excellent. Moreover, since the surface roughness (Ra) of said one surface is as flat as 3 micrometers or less, it is excellent in external appearance property. In addition, since the surface roughness (Ra) of the one surface is as flat as 3 ⁇ m or less, when the processing such as grinding is not performed, the suction by the suction collet is easily performed. As a result, conveyance mistakes can be suppressed.
- the surface roughness (Ra) may be 3 ⁇ m or less before curing, 3 ⁇ m or less after curing, and 3 ⁇ m or less before and after curing. That is, the present invention (1) When the surface roughness (Ra) is 3 ⁇ m or less before curing and not 3 ⁇ m or less after curing, (2) the surface roughness (Ra) is 3 ⁇ m or less after curing and not 3 ⁇ m or less before curing; and (3) The case where the surface roughness (Ra) is 3 ⁇ m or less before curing and 3 ⁇ m or less after curing is included.
- a colorant is added to the one surface side.
- the visibility of the laser-marked portion can be further improved.
- the present invention also provides a method for manufacturing a semiconductor device, Flip-chip bonding the electronic device to the circuit forming surface of the semiconductor wafer; and A step B of embedding the electronic device flip-chip bonded to the semiconductor wafer in a sealing sheet to form a sealing body;
- the surface roughness (Ra) of the surface opposite to the surface facing the semiconductor wafer in the sealing sheet is 3 ⁇ m or less.
- the surface roughness (Ra) of the surface of the encapsulant in which the electronic device is embedded in the encapsulating sheet is 3 ⁇ m or less. Since the surface roughness (Ra) of the surface of the sealing body is as flat as 3 ⁇ m or less, the laser marking property is excellent. Moreover, since the surface roughness (Ra) of the surface of the sealing body is as flat as 3 ⁇ m or less, the appearance is excellent.
- the surface roughness (Ra) of the surface of the sealing body is as flat as 3 [mu] m or less, when the processing such as grinding is not performed, it is easy to perform the suction by the suction collet. As a result, conveyance mistakes can be suppressed.
- a colorant is added to the surface of the sealing sheet opposite to the surface facing the semiconductor wafer.
- the visibility of the laser-marked portion can be further improved.
- the present invention it is possible to provide a sealing sheet excellent in laser marking properties and a method for manufacturing a semiconductor device using the sealing sheet.
- the manufacturing method of the semiconductor device is as follows: Flip-chip bonding the semiconductor chip to the circuit forming surface of the semiconductor wafer; and And a step B of forming a sealing body by embedding the semiconductor chip flip-chip bonded to the semiconductor wafer in a sealing sheet. And the surface roughness (Ra) of the surface on the opposite side to the surface facing the said semiconductor wafer in the said sheet
- FIG. 1 to 11 are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to an embodiment of the present invention.
- the semiconductor chip 23 is flip-chip bonded to the circuit forming surface 22a of the semiconductor wafer 22 (step A).
- a known device such as a flip chip bonder or a die bonder can be used.
- the bumps 23b formed on the circuit formation surface 23a of the semiconductor chip 23 and the electrodes 22b formed on the circuit formation surface 22a of the semiconductor wafer 22 are electrically connected.
- the resin sheet 24 for underfill may be affixed on the circuit formation surface 23a of the semiconductor chip 23.
- the gap between the semiconductor chip 23 and the semiconductor wafer 22 can be resin-sealed.
- a method for flip-chip bonding the semiconductor chip 23 to which the underfill resin sheet 24 is attached to the semiconductor wafer 22 is disclosed in, for example, Japanese Patent Application Laid-Open No. 2013-115186. Detailed description is omitted.
- a sealing sheet 10 is prepared as shown in FIG.
- the sealing sheet 10 may be prepared in a state of being laminated on a release liner 11 such as a polyethylene terephthalate (PET) film.
- the release liner 11 may be subjected to a release treatment in order to easily peel the sealing sheet 10.
- the surface roughness (Ra) of one surface is 3 micrometers or less.
- the one surface is a surface opposite to the surface facing the semiconductor wafer 22 when the semiconductor chip 23 is sealed.
- the surface roughness (Ra) is preferably 1 nm to 2 ⁇ m, and more preferably 20 nm to 1 ⁇ m. Since the surface roughness (Ra) is as flat as 3 ⁇ m or less, the laser marking property of the one surface is excellent. Moreover, since the surface roughness (Ra) of said one surface is as flat as 3 micrometers or less, it is excellent in external appearance property.
- the surface roughness (Ra) of the one surface is as flat as 3 ⁇ m or less, when the processing such as grinding is not performed, the suction by the suction collet is easily performed. As a result, conveyance mistakes can be suppressed.
- the surface roughness is measured by the method described in the examples.
- the constituent material of the sealing sheet 10 includes an epoxy resin and a phenol resin as a curing agent. Thereby, favorable thermosetting is obtained.
- the epoxy resin is not particularly limited.
- triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
- the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
- the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
- a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
- These phenolic resins may be used alone or in combination of two or more.
- phenol resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and phenol phenol is particularly preferable from the viewpoint of high curing reactivity.
- a novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
- the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
- the total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 2.5% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to the semiconductor chip 23, the semiconductor wafer 22, etc. is acquired favorably as it is 2.5 weight% or more.
- the total content of the epoxy resin and the phenol resin in the sealing sheet 10 is preferably 20% by weight or less, and more preferably 10% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.
- the sealing sheet 10 preferably contains a thermoplastic resin. Thereby, the handleability at the time of non-hardening and the low stress property of hardened
- thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Plastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. Is mentioned. These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferable from the viewpoint of low stress and low water absorption.
- the content of the thermoplastic resin in the sealing sheet 10 is preferably 1.5% by weight or more, and more preferably 2.0% by weight or more. A softness
- the content of the thermoplastic resin in the sealing sheet 10 is preferably 6% by weight or less, and more preferably 4% by weight or less. Adhesiveness with the semiconductor chip 23 and the semiconductor wafer 22 is favorable as it is 4 weight% or less.
- the sealing sheet 10 preferably contains an inorganic filler.
- the inorganic filler is not particularly limited, and various conventionally known fillers can be used.
- quartz glass, talc, silica such as fused silica and crystalline silica
- alumina aluminum nitride
- nitriding Examples thereof include silicon and boron nitride powders. These may be used alone or in combination of two or more. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
- silica powder is preferable, and fused silica powder is more preferable.
- fused silica powder examples include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable.
- the sealing sheet 10 has a surface roughness (Ra) of one surface of 3 ⁇ m or less.
- the surface roughness (Ra) of the sealing sheet 10 can be adjusted by the particle size (average particle size, maximum particle size, etc.) and blending amount of the inorganic filler.
- the particle diameter of such an inorganic filler it is preferable to select an average particle diameter or a maximum particle diameter of 50 nm to 3 ⁇ m, but even if it exceeds 3 ⁇ m, the thickness of the sealing sheet 10 and the inorganic filling
- the surface roughness (Ra) of the sealing sheet 10 can be 3 ⁇ m or less.
- the average particle diameter of the inorganic filler is preferably 100 nm to 2 ⁇ m, more preferably 300 nm to 1 ⁇ m.
- the maximum particle size of the inorganic filler is preferably 5 ⁇ m or less, more preferably 4 ⁇ m or less (particularly preferably 3 ⁇ m or less).
- the sealing sheet 10 can be obtained.
- the content of the inorganic filler in the sealing sheet 10 is preferably 75 to 95% by weight, more preferably 78 to 91% by weight with respect to the entire sealing sheet 10.
- the sealing sheet 10 contains a curing accelerator.
- the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
- organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate
- 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
- 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature during kneading increases, and the sealing sheet 10 can be satisfactorily produced.
- the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
- the sealing sheet 10 preferably contains a flame retardant component. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation.
- a flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.
- the content of the phosphorus element contained in the phosphazene flame retardant is preferably 12% by weight or more.
- the content of the flame retardant component in the sealing sheet 10 is preferably 10% by weight or more and more preferably 15% by weight or more in the total organic components (excluding the inorganic filler). A flame retardance is favorably acquired as it is 10 weight% or more.
- the content of the thermoplastic resin in the sealing sheet 10 is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high temperature resin strength).
- the sealing sheet 10 contains a silane coupling agent.
- the silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
- the content of the silane coupling agent in the sealing sheet 10 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption rate can be lowered. If it is 3% by weight or less, the outgas amount can be lowered.
- the sealing sheet 10 is preferably colored. Thereby, excellent marking properties and appearance can be exhibited, and a semiconductor device having an added-value appearance can be obtained. Since the colored sealing sheet 10 has excellent marking properties, it can be marked to give various information such as character information and graphic information. In particular, by controlling the coloring color, it is possible to visually recognize information (character information, graphic information, etc.) given by marking with excellent visibility. Furthermore, the sealing sheet 10 can be color-coded for each product. When the sealing sheet 10 is colored (when it is colorless and not transparent), it is not particularly limited as a color exhibited by coloring, but it is preferably a dark color such as black, blue, red, etc. It is suitable that it is black.
- the dark basically, L * a * b * L * is defined by a color system, 60 or less (0 to 60) [preferably 50 or less (0 to 50), More preferably, it means a dark color of 40 or less (0 to 40)].
- L * a * b * L * defined by the color system is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25 This means a blackish color which is (0 to 25) below.
- a * and b * defined in the L * a * b * color system can be appropriately selected according to the value of L * .
- a * and b * for example, both are preferably ⁇ 10 to 10, more preferably ⁇ 5 to 5, particularly in the range of ⁇ 3 to 3 (in particular, 0 or almost 0). Is preferred.
- L * , a * , and b * defined in the L * a * b * color system are color difference meters (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is calculated
- the L * a * b * color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L * a * b * ) color system. It means that.
- the L * a * b * color system is defined in JISZ 8729 in the Japanese Industrial Standard.
- the sealing sheet 10 When the sealing sheet 10 is colored, a coloring material (coloring agent) can be used according to the target color.
- the sealing sheet of the present invention may have a single layer structure or a plurality of layers, but at least a colorant is added to the side opposite to the surface facing the semiconductor wafer. It is preferable.
- the entire encapsulating sheet may contain a colorant uniformly, and the colorant is present on the side opposite to the surface facing the semiconductor wafer.
- a colorant may be contained in an unevenly distributed manner.
- the colorant may be added to the layer on the side opposite to the surface facing the semiconductor wafer 22 and the colorant may not be added to the other layers.
- seat for sealing of this invention is the sheet
- a color material various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable.
- the color material any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more.
- the dye any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used.
- the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.
- the dye when a dye is used as the colorant, the dye is dissolved or evenly dispersed in the sealing sheet 10, so that the sealing sheet 10 having a uniform or almost uniform coloring density can be easily obtained. Can be manufactured, and marking properties and appearance can be improved.
- the black color material is not particularly limited, and can be appropriately selected from, for example, inorganic black pigments and black dyes.
- a black color material a color material mixture in which a cyan color material (blue-green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be.
- Black color materials can be used alone or in combination of two or more.
- the black color material can be used in combination with a color material other than black.
- the black color material for example, carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, azo pigment (azomethine) Azo black, etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black Examples thereof include dyes and anthraquinone organic black dyes.
- black color material C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C.
- Black dyes such as Disperse Black 1, 3, 10, and 24;
- Black pigments such as CI Pigment Black 1 and 7 can also be used.
- Examples of such a black color material include a product name “OilOBlack BY”, a product name “OilBlack BS”, a product name “OilBlackHBB”, a product name “Oil Black803”, a product name “Oil Black860”, and a product name “Oil Black860”.
- Oil Black 5970 ”, trade name“ Oil Black 5906 ”, trade name“ Oil Black 5905 ”(manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.
- color materials other than black color materials include cyan color materials, magenta color materials, and yellow color materials.
- cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.
- magenta dye examples include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 13, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.
- magenta pigment examples include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc.
- yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I.
- Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more.
- the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.
- the light transmittance (visible light transmittance) by visible light (wavelength: 380 nm to 800 nm) in the sealing sheet 10 is not particularly limited, but is preferably in the range of 20% to 0%, for example. Is from 10% to 0%, particularly preferably from 5% to 0%.
- the visible light transmittance of the sealing sheet 10 is set to 20% or less, the print visibility can be improved. Further, it is possible to prevent an adverse effect on the semiconductor element due to the passage of light.
- the visible light transmittance (%) of the sealing sheet 10 is such that the sealing sheet 10 having a thickness (average thickness): 10 ⁇ m is prepared, and the sealing sheet 10 (thickness: 10 ⁇ m) Using “UV-2550” (manufactured by Shimadzu Corporation), visible light having a wavelength of 380 nm to 800 nm is irradiated with a predetermined intensity.
- the light intensity of visible light transmitted through the sealing sheet 10 by this irradiation can be measured and calculated by the following formula.
- Visible light transmittance (%) ((light intensity of visible light after transmission through sealing sheet 10) / (initial light intensity of visible light)) ⁇ 100
- the said calculation method of light transmittance (%) is applicable also to calculation of the light transmittance (%) of the sheet
- the absorbance A 10 at 10 ⁇ m can be calculated as follows according to Lambert Beer's law.
- a 10 ⁇ ⁇ L 10 ⁇ C (1) (Where L 10 is the optical path length, ⁇ is the extinction coefficient, and C is the sample concentration) Also, the absorbance A X of a thickness X ([mu] m) can be represented by the following formula (2).
- a X ⁇ ⁇ L X ⁇ C (2)
- the absorbance A 20 at a thickness of 20 ⁇ m can be expressed by the following formula (3).
- the thickness (average thickness) of the sealing sheet when determining the light transmittance (%) of the sealing sheet is 10 ⁇ m.
- the thickness of the sealing sheet is only sealed. It is the thickness at the time of obtaining the light transmittance (%) of the stop sheet, and does not mean that the sealing sheet in the present invention is 10 ⁇ m.
- the light transmittance (%) of the sealing sheet 10 is controlled by the type and content of the resin component, the type and content of the colorant (pigment, dye, etc.), the type and content of the filler, and the like. be able to.
- the thickness of the sealing sheet 10 is not particularly limited, but is, for example, 50 ⁇ m to 2000 ⁇ m from the viewpoint of use as a sealing sheet.
- seat 10 for sealing is not specifically limited, The method of coating the kneaded material obtained by preparing the kneaded material of the resin composition for forming the sheet
- a kneaded product is prepared by melt-kneading each component described below with a known kneader such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded product is coated or plastically processed into a sheet. Shape.
- the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 to 150 ° C., and preferably 40 to 140 ° C., more preferably 60 to 120 in consideration of the thermosetting property of the epoxy resin. ° C.
- the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
- the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration
- the pressure under reduced pressure is preferably 0.1 kg / cm 2 or less, more preferably 0.05 kg / cm 2 or less.
- the lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 ⁇ 10 ⁇ 4 kg / cm 2 or more.
- the kneaded material after melt-kneading is applied in a high temperature state without cooling.
- the coating method is not particularly limited, and examples thereof include a bar coating method, a knife coating method, and a slot die method.
- the temperature at the time of coating is preferably not less than the softening point of each component described above, and considering the thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C.
- the surface roughness can be made desired by controlling the content and particle size of the inorganic filler.
- the kneaded material after melt-kneading is plastically processed in a high temperature state without cooling.
- the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendar molding method.
- the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
- the surface roughness can be made desired by controlling the content and particle size of the inorganic filler.
- the sealing sheet 10 can also be obtained by dissolving and dispersing a resin or the like for forming the sealing sheet 10 in an appropriate solvent to adjust the varnish and coating the varnish on the release sheet. .
- the surface roughness can be made desired by controlling the content and particle size of the inorganic filler.
- the desired surface roughness of the coating layer (sealing sheet 10) on the release sheet surface side can be obtained. .
- seat is piled up and it dries after that and forms the sheet
- the first release sheet or the second release sheet one that can smooth the surface roughness of the sealing sheet 10 is selected. What is necessary is just to select what can make surface roughness (Ra) in the range of 3 micrometers or less.
- Step of arranging sealing sheet and laminate After the step of preparing the sealing sheet, as shown in FIG. 3, the stacked body 20 is disposed on the lower heating plate 32 with the surface on which the semiconductor chip 23 is mounted facing upward, and the semiconductor of the stacked body 20 The sealing sheet 10 is disposed on the surface on which the chip 23 is mounted.
- the laminated body 20 may be first disposed on the lower heating plate 32, and then the sealing sheet 10 may be disposed on the laminated body 20, and the sealing sheet 10 may be disposed on the laminated body 20.
- a laminate obtained by laminating first and then laminating the laminate 20 and the sealing sheet 10 may be disposed on the lower heating plate 32.
- Step B the semiconductor chip 23 is embedded in the sealing sheet 10 by hot pressing with the lower heating plate 32 and the upper heating plate 34 (step B).
- the sealing sheet 10 functions as a sealing resin for protecting the semiconductor chip 23 and its accompanying elements from the external environment. Thereby, the sealing body 28 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10 is obtained.
- the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C.
- the pressure is, for example, 0.1 to 10 MPa, preferably Is 0.5 to 8 MPa
- the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
- the pressure reducing conditions the pressure is, for example, 0.1 to 5 kPa, preferably 0.1 to 100 Pa, and the reduced pressure holding time (the time from the start of pressure reduction to the start of pressing) is, for example, 5 to 600 seconds. Yes, preferably 10 to 300 seconds.
- the sealing sheet 10 is thermoset. Specifically, for example, the entire sealing body 28 in which the semiconductor chip 23 mounted on the semiconductor wafer 22 is embedded in the sealing sheet 10 is heated.
- the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher.
- the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
- the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
- the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
- you may pressurize as needed Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more.
- the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
- laser marking step 1 laser marking step before grinding sealing sheet
- laser marking is performed on the sealing sheet 10 using a laser marking laser 36 (hereinafter also referred to as “step E-1”).
- the conditions for laser marking are not particularly limited, but it is preferable to irradiate the sealing sheet 10 with laser [wavelength: 532 nm] under the conditions of intensity: 0.3 W to 2.0 W. Moreover, it is preferable to irradiate so that the processing depth (depth) in this case may be 2 ⁇ m or more.
- the upper limit of the processing depth is not particularly limited, but can be selected, for example, from a range of 2 ⁇ m to 25 ⁇ m, preferably 3 ⁇ m or more (3 ⁇ m to 20 ⁇ m), more preferably 5 ⁇ m or more (5 ⁇ m to 15 ⁇ m). .
- excellent laser marking properties are exhibited.
- the laser workability of the sealing sheet 10 includes the type and content of the constituent resin component, the type and content of the colorant, the type and content of the crosslinking agent, the type and content of the filler, and the like. Can be controlled.
- the place where laser marking is performed on the sealing sheet 10 is not particularly limited, and may be directly above the semiconductor chip 23, or above the place where the semiconductor chip 23 is not disposed (for example, Or the outer peripheral portion of the sealing sheet 10).
- the information marked by the laser marking may be character information, graphic information, or the like for enabling distinction in units of sealing bodies. It may be character information, graphic information, or the like for enabling distinction.
- the sealing sheet 10 of the sealing body 28 is ground to expose the back surface 23c of the semiconductor chip 23 (step C).
- the method for grinding the sealing sheet 10 is not particularly limited, and examples thereof include a grinding method using a grindstone that rotates at high speed. It should be noted that the marking applied in step E-1 disappears when the thickness ground in step C is thicker than the marking depth (processing depth). On the other hand, if the thickness ground in step C is thinner than the marking depth (processing depth), the marking remains.
- laser marking process 2 laser marking process after grinding of sealing sheet
- laser marking is performed on the sealing sheet 10 using a laser marking laser 38 (hereinafter also referred to as “step E-2”).
- the conditions for laser marking are not particularly limited, but it is preferable to irradiate the sealing sheet 10 with laser [wavelength: 532 nm] under the conditions of intensity: 0.3 W to 2.0 W. Moreover, it is preferable to irradiate so that the processing depth (depth) in this case may be 2 ⁇ m or more.
- the upper limit of the processing depth is not particularly limited, but can be selected, for example, from a range of 2 ⁇ m to 25 ⁇ m, preferably 3 ⁇ m or more (3 ⁇ m to 20 ⁇ m), more preferably 5 ⁇ m or more (5 ⁇ m to 15 ⁇ m). .
- excellent laser marking properties are exhibited.
- the place where the laser marking is performed on the sealing sheet 10 is not particularly limited, but may be above the place where the semiconductor chip 23 is not disposed.
- the information marked by the laser marking may be character information, graphic information, or the like for enabling distinction in units of sealing bodies. It may be character information, graphic information, or the like for enabling distinction.
- the sealing body 28 and the semiconductor device are made to have mutual discrimination again even after the sealing sheet 10 is ground. It becomes possible. Further, the information marked by laser marking may be graphic information for alignment (alignment mark) that can be used in a dicing process described later.
- the surface of the semiconductor wafer 22 opposite to the side on which the semiconductor chip 23 is mounted is ground to form a via (Via) 22c (see FIG. 9), and then the wiring layer 27 having the wiring 27a. (See FIG. 10).
- the method for grinding the semiconductor wafer 22 is not particularly limited, and examples thereof include a grinding method using a grindstone that rotates at high speed.
- bumps 27b protruding from the wiring 27a may be formed.
- Conventionally known circuit board and interposer manufacturing techniques such as a semi-additive method and a subtractive method can be applied to the method of forming the wiring layer 27, and thus detailed description thereof is omitted here.
- a substrate mounting step for mounting the semiconductor device 29 on a separate substrate can be performed.
- a known device such as a flip chip bonder or a die bonder can be used.
- the surface roughness (Ra) of the surface of the sealing body 28 is 3 ⁇ m or less after curing. Since it is flat, it is excellent in laser marking properties (laser marking properties in the laser marking process 1). Moreover, since the surface roughness (Ra) of the surface of the sealing body 28 is as flat as 3 ⁇ m or less, the appearance is excellent. Specifically, (1) when the surface roughness (Ra) of the surface of the sealing body 28 is 3 ⁇ m or less before curing and not 3 ⁇ m or less after curing, the appearance before curing is excellent.
- step C may not be performed.
- the surface roughness (Ra) of the surface of the sealing body 28 is as flat as 3 ⁇ m or less, it is easy to perform adsorption by the adsorption collet. As a result, conveyance mistakes can be suppressed.
- the timing of performing the step E-1 is not limited to this example.
- the timing of performing the step E-1 may be after the step of forming the sealing body and before the release liner peeling step. Further, it may be after the release liner peeling step and before the thermosetting step.
- thermosetting process for thermosetting the sealing sheet of the sealing body is performed after the process B (sealing body forming process) and before the process C (sealing sheet grinding process).
- the timing which performs the said thermosetting process is not limited to this example, You may carry out simultaneously with the process A (process which forms a sealing body).
- the thermosetting step may be performed after step E-1 (laser marking step before grinding the sealing sheet).
- the surface roughness (Ra) of the surface of the sealing body 28 is 3 ⁇ m or less before the thermosetting. It is preferable.
- the laser marking property laser marking property in the laser marking step 1 is excellent.
- the release liner 11 is peeled before the thermosetting process has been described.
- the release liner 11 may be peeled after the thermosetting process.
- the present invention is not limited to the above-described embodiment, and it is only necessary to perform the process A and the process B, and other processes are optional and may or may not be performed. Further, it is only necessary to perform the process A and the process B, and the other processes may be performed in any order.
- the surface roughness (Ra) is 3 ⁇ m or less before curing and 3 ⁇ m or less after curing, or (2) the surface roughness (Ra) is 3 ⁇ m or less after curing. Whether it is 3 ⁇ m or less before curing and (3) whether the surface roughness (Ra) is 3 ⁇ m or less before curing and 3 ⁇ m or less after curing depends on the order of the steps to be adopted Can be determined.
- the electronic device of the present invention is a semiconductor chip.
- the electronic device in the present invention is not limited to this.
- Electronic devices in the present invention include sensors, MEMS (Micro Electro Mechanical Systems), electronic devices having a hollow structure such as SAW (Surface Acoustic Wave) filters (hollow electronic devices); semiconductor chips, ICs (integrated circuits), transistors And semiconductor elements; capacitors; resistors and the like.
- the hollow structure refers to a structure in which an electronic device and a substrate on which the electronic device is mounted are hollow.
- Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.
- Flame retardant FP-100 (phenoxycyclophosphazene oligomer) manufactured by Fushimi
- Pharmaceutical Carbon black # 20 (particle size 50 nm) manufactured by Mitsubishi Chemical Corporation Curing accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
- Thermoplastic resin SIBSTAR 072T (polystyrene-polyisobutylene-polystyrene copolymer) manufactured by Kaneka Corporation
- Filler A FB-950 (fused spherical silica powder, average particle size 23.8 ⁇ m) manufactured by Denki Kagaku Kogyo Co., Ltd.
- Filler B FB-9454 manufactured by Denki Kagaku Kogyo Co., Ltd. (fused spherical silica powder, average particle size 19.9 ⁇ m)
- Filler C FB-7SDC manufactured by Denki Kagaku Kogyo Co., Ltd.
- Filler D FB-560 manufactured by Denki Kagaku Kogyo Co., Ltd. (fused spherical silica powder, average particle size 30 ⁇ m)
- ⁇ Preparation of sealing sheet> The above components were blended according to the following Table 1, and melt kneaded using a roll kneader at 60 to 120 ° C. under reduced pressure (0.01 kg / cm 2 ) to prepare a kneaded product. Next, the obtained kneaded material was placed on a separator (Mitsubishi Chemical Corporation, product name “MRF38”, surface) on a press plate provided with a 100 ⁇ m spacer of an instantaneous vacuum laminator (VS008-1515 manufactured by Mikado Technos).
- a separator Mitsubishi Chemical Corporation, product name “MRF38”, surface
- the separator is peeled off from the sealing sheets prepared in Examples and Comparative Examples, and the surface roughness (Ra) of the exposed surface is determined according to JIS B 0601, a non-contact three-dimensional roughness measuring device (NT3300 manufactured by WYKO). ).
- the measurement conditions were 50 times, and the measurement values were obtained by applying a median filter to the measurement data.
- the measurement was performed 5 times for each sealing sheet while changing the measurement location, and the average value was defined as the surface roughness (Ra). This was the surface roughness before curing.
- Table 1 The results are shown in Table 1 below.
- seat for sealing was hardened on 150 degreeC and the conditions for 1 hour. Thereafter, the surface roughness after curing of the sealing sheet was measured in the same manner as the measurement of the surface roughness before curing. The results are shown in Table 1 below.
- the separator is peeled off from the sealing sheets prepared in Examples and Comparative Examples, and the exposed surface is placed on the upper surface.
- a laser printing device (trade name “MD-S9900”, manufactured by KEYENCE)
- the laser printing was performed under the irradiation conditions.
- Laser wavelength 532 nm
- Laser power 1.2W
- Frequency 32kHz
- the adhesive sheet printed with laser is irradiated with oblique illumination from all directions to the sealing sheet surface using a device name of KEYENCE company: CA-DDW8, and a CCD camera (device name: CV-0350) (KEYENCE). Reflected light.
- the brightness of the reflected light taken in was measured using a device name: CV-5000 manufactured by KEYENCE Corporation.
- the brightness measurement was performed on both the laser printing part and the non-printing part.
- the lightness is a value in which white is 100% and black is 0%, and in this specification, the value is measured using the above-mentioned KEYENCE device name, CV-5000.
- the difference between the lightness of the laser-printed portion and the lightness of the non-printed portion was defined as contrast [%], and the case of 40% or more was evaluated as ⁇ , and the case of less than 40% was evaluated as ⁇ . This was evaluated as the contrast before curing. The results are shown in Table 1.
- seat for sealing was hardened on 150 degreeC and the conditions for 1 hour. Thereafter, laser printing was performed in the same manner as the contrast evaluation before curing, and the contrast was evaluated. This was used as the contrast evaluation after curing. The results are shown in Table 1 below.
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Abstract
Description
一方の面の表面粗さ(Ra)が、3μm以下であることを特徴とする。
本発明において、前記表面粗さ(Ra)は、硬化前に3μm以下であってもよく、硬化後に3μm以下であってもよく、硬化前及び硬化後に3μm以下であってよい。
すなわち、本発明は、
(1)前記表面粗さ(Ra)が、硬化前に3μm以下であり且つ硬化後は3μm以下ではない場合、
(2)前記表面粗さ(Ra)が、硬化後に3μm以下であり且つ硬化前は3μm以下ではない場合、及び、
(3)前記表面粗さ(Ra)が、硬化前に3μm以下であり且つ硬化後に3μm以下である場合を含む。
電子デバイスを半導体ウエハの回路形成面にフリップチップボンディングする工程Aと、
前記半導体ウエハにフリップチップボンディングされた前記電子デバイスを封止用シートに埋め込んで封止体を形成する工程Bとを有し、
前記封止用シートにおける前記半導体ウエハと対向する面とは反対の面の表面粗さ(Ra)が、3μm以下であることを特徴とする。
半導体チップを半導体ウエハの回路形成面にフリップチップボンディングする工程Aと、
前記半導体ウエハにフリップチップボンディングされた前記半導体チップを封止用シートに埋め込んで封止体を形成する工程Bとを少なくとも有する。
そして、前記封止用シートにおける前記半導体ウエハと対向する面とは反対の面の表面粗さ(Ra)が、3μm以下である。
図1に示すように、本実施形態に係る半導体装置の製造方法では、まず、回路形成面23aを有する1又は複数の半導体チップ23と、回路形成面22aを有する半導体ウエハ22とを準備する。なお、以下では、複数の半導体チップを半導体ウエハにフリップチップボンディングする場合について説明する。
次に、図2に示すように、半導体チップ23を半導体ウエハ22の回路形成面22aにフリップチップボンディングする(工程A)。半導体チップ23の半導体ウエハ22への搭載には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。具体的には、半導体チップ23の回路形成面23aに形成されたバンプ23bと、半導体ウエハ22の回路形成面22aに形成された電極22bとを電気的に接続する。これにより、複数の半導体チップ23が半導体ウエハ22に実装された積層体20が得られる。この際、半導体チップ23の回路形成面23aにアンダーフィル用の樹脂シート24が貼り付けられていてもよい。この場合、半導体チップ23を半導体ウエハ22にフリップチップボンディングすると、半導体チップ23と半導体ウエハ22との間の間隙を樹脂封止することができる。なお、アンダーフィル用の樹脂シート24が貼り付けられた半導体チップ23を半導体ウエハ22にフリップチップボンディングする方法については、例えば、特開2013-115186号公報等に開示されているため、ここでの詳細な説明は省略する。
また、本実施形態に係る半導体装置の製造方法では、図3に示すように、封止用シート10を準備する。封止用シート10は、ポリエチレンテレフタレート(PET)フィルムなどの剥離ライナー11上に積層された状態で準備してもよい。この場合、剥離ライナー11には封止用シート10の剥離を容易に行うために離型処理が施されていてもよい。
封止用シート10は、一方の面の表面粗さ(Ra)が、3μm以下である。なお、当該一方の面は、半導体チップ23を封止する際に、半導体ウエハ22と対向する面とは反対側の面となる。前記表面粗さ(Ra)は、1nm~2μmであることが好ましく、20nm~1μmであることがより好ましい。前記表面粗さ(Ra)が、3μm以下と平坦であるため、当該一方の面のレーザーマーキング性に優れる。また、前記一方の面の表面粗さ(Ra)が3μm以下と平坦であるため、外観性に優れる。また、前記一方の面の表面粗さ(Ra)が3μm以下と平坦であるため、研削等の処理が行なわれない場合には、吸着コレットによる吸着が行い易い。その結果、搬送ミスを抑制することができる。表面粗さの測定方法は、実施例に記載の方法による。
なお、封止用シート10の表面粗さ(Ra)を、硬化前に3μm以下とする場合には、硬化前に3μm以下となるように無機充填剤を調整すればよい。また、封止用シート10の表面粗さ(Ra)を、硬化後に3μm以下とする場合には、硬化後に3μm以下となるように無機充填剤を調整すればよい。また、封止用シート10の表面粗さ(Ra)を、硬化前及び硬化後に3μm以下とする場合には、硬化前及び硬化後に3μm以下となるように無機充填剤を調整すればよい。
可視光線透過率(%)=((封止用シート10の透過後の可視光線の光強度)/(可視光線の初期の光強度))×100
(式中、L10は光路長、αは吸光係数、Cは試料濃度を表す)
また、厚さX(μm)での吸光度AXは下記式(2)により表すことができる。
AX=α×LX×C (2)
更に、厚さ20μmでの吸光度A20は下記式(3)により表すことができる。
A10=-log10T10 (3)
(式中、T10は厚さ10μmでの光線透過率を表す)
前記式(1)~(3)より、吸光度AXは、
AX=A10×(LX/L10)
=-[log10(T10)]×(LX/L10)
と表すことができる。これにより、厚さX(μm)での光線透過率TX(%)は、下記により算出することができる。
TX=10-AX
但し、AX=-[log10(T10)]×(LX/L10)
封止用シートを準備する工程の後、図3に示すように、下側加熱板32上に積層体20を半導体チップ23が実装された面を上にして配置するとともに、積層体20の半導体チップ23が実装された面上に封止用シート10を配置する。この工程においては、下側加熱板32上にまず積層体20を配置し、その後、積層体20上に封止用シート10を配置してもよく、積層体20上に封止用シート10を先に積層し、その後、積層体20と封止用シート10とが積層された積層物を下側加熱板32上に配置してもよい。
次に、図4に示すように、下側加熱板32と上側加熱板34とにより熱プレスして、半導体チップ23を封止用シート10に埋め込む(工程B)。封止用シート10は、半導体チップ23及びそれに付随する要素を外部環境から保護するための封止樹脂として機能することとなる。これにより、半導体ウエハ22上に実装されている半導体チップ23が封止用シート10に埋め込まれた封止体28が得られる。
前記減圧条件としては、圧力が、例えば、0.1~5kPa、好ましくは、0.1~100Paであり、減圧保持時間(減圧開始からプレス開始までの時間)が、例えば、5~600秒であり、好ましくは、10~300秒である。
次に、剥離ライナー11を剥離する(図5参照)。
次に、封止用シート10を熱硬化する。具体的には、例えば、半導体ウエハ22上に実装されている半導体チップ23が封止用シート10に埋め込まれた封止体28全体を加熱する。
次に、図6に示すように、レーザーマーキング用のレーザー36を用いて、封止用シート10にレーザーマーキングを行なう(以下、「工程E-1」ともいう)。レーザーマーキングの条件としては、特に限定されないが、封止用シート10に、レーザー[波長:532nm]を、強度:0.3W~2.0Wの条件で照射することが好ましい。また、この際の加工深さ(深度)が2μm以上となるように照射することが好ましい。前記加工深さの上限は特に制限されないが、例えば、2μm~25μmの範囲から選択することができ、好ましくは3μm以上(3μm~20μm)であり、より好ましくは5μm以上(5μm~15μm)である。レーザーマーキングの条件を前記数値範囲内とすることにより、優れたレーザーマーキング性が発揮される。
次に、図7に示すように、封止体28の封止用シート10を研削して半導体チップ23の裏面23cを表出させる(工程C)。封止用シート10を研削する方法としては、特に限定されず、例えば、高速回転する砥石を用いるグラインディング法を挙げることができる。
なお、工程E-1により付されたマーキングは、工程Cにおいて研削した厚さがマーキング深さ(加工深さ)よりも厚い場合は、マーキングは消失する。一方、工程Cにおいて研削した厚さがマーキング深さ(加工深さ)よりも薄い場合は、マーキングは残される。
次に、図8に示すように、レーザーマーキング用のレーザー38を用いて、封止用シート10にレーザーマーキングを行なう(以下、「工程E-2」ともいう)。レーザーマーキングの条件としては、特に限定されないが、封止用シート10に、レーザー[波長:532nm]を、強度:0.3W~2.0Wの条件で照射することが好ましい。また、この際の加工深さ(深度)が2μm以上となるように照射することが好ましい。前記加工深さの上限は特に制限されないが、例えば、2μm~25μmの範囲から選択することができ、好ましくは3μm以上(3μm~20μm)であり、より好ましくは5μm以上(5μm~15μm)である。レーザーマーキングの条件を前記数値範囲内とすることにより、優れたレーザーマーキング性が発揮される。
次に、半導体ウエハ22における、半導体チップ23が搭載されている側とは反対側の面を研削して、ビア(Via)22cを形成した後(図9参照)、配線27aを有する配線層27を形成する(図10参照)。半導体ウエハ22を研削する方法としては、特に限定されず、例えば、高速回転する砥石を用いるグラインディング法を挙げることができる。配線層27には、配線27aから突出したバンプ27bを形成してもよい。配線層27を形成する方法には、セミアディティブ法や、サブトラクティブ法など、従来公知の回路基板やインターポーザの製造技術を適用することができるから、ここでの詳細な説明は省略する。
続いて、図11に示すように、半導体チップ23の裏面23cが表出している封止体28をダイシングする(工程D)。これにより、半導体チップ23単位での半導体装置29を得ることができる。
必要に応じて、半導体装置29を別途の基板(図示せず)に実装する基板実装工程を行うことができる。半導体装置29の前記別途の基板への実装には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。
また、封止体28の表面の前記表面粗さ(Ra)が3μm以下と平坦であるため、外観性に優れる。具体的に、(1)封止体28の表面の前記表面粗さ(Ra)が、硬化前に3μm以下であり且つ硬化後は3μm以下ではない場合、硬化前の外観性に優れる。(2)封止体28の表面の前記表面粗さ(Ra)が、硬化後に3μm以下であり且つ硬化前は3μm以下ではない場合、硬化後の外観性に優れる。(3)封止体28の表面の前記表面粗さ(Ra)が、硬化前に3μm以下であり且つ硬化後に3μm以下である場合、硬化前及び硬化後の外観性に優れる。
実施例、比較例で使用した成分について説明する。
<成分>
エポキシ樹脂:新日鐵化学(株)製のYSLV-80XY(ビスフェノールF型エポキシ樹脂、エポキン当量200g/eq.軟化点80℃)
フェノール樹脂:明和化成社製のMEH-7851-SS(ビフェニルアラルキル骨格を有するフェノール樹脂、水酸基当量203g/eq.軟化点67℃)
シランカップリング剤:信越化学社製のKBM-403(3-グリシドキシプロピルトリメトキシシラン)
難燃剤:伏見製薬所製のFP-100(フェノキシシクロホスファゼンオリゴマー)
カーボンブラック:三菱化学社製の#20(粒子径50nm)
硬化促進剤:四国化成工業社製の2PHZ-PW(2-フェニル-4,5-ジヒドロキシメチルイミダゾール)
熱可塑性樹脂:カネカ社製のSIBSTAR 072T(ポリスチレン-ポリイソブチレン-ポリスチレン共重合体)
フィラーA:電気化学工業社製のFB-950(溶融球状シリカ粉末、平均粒子径23.8μm)
フィラーB:電気化学工業社製のFB-9454(溶融球状シリカ粉末、平均粒子径19.9μm)
フィラーC:電気化学工業社製のFB-7SDC(親水性フュームドシリカ、平均粒子径5.8nm)
フィラーD:電気化学工業社製のFB-560(溶融球状シリカ粉末、平均粒子径30μm)
上記各成分を下記表1に従って配合し、ロール混練機により60~120℃、減圧条件下(0.01kg/cm2)で溶融混練し、混練物を調製した。次いで、得られた混練物を、瞬時真空積層装置(ミカドテクノス社製のVS008-1515)の100μmのスペーサ―を設置したプレス板上に、セパレータ(三菱化学社製、製品名「MRF38」、表面粗さ0.038μm)に挟んだ状態で載置し、これを真空プレスした(プレス条件:真空保持時間30秒、加圧時間60秒、圧力203.9g/cm2、プレス温度90℃)。このようにして本実施例1~3及び比較例1に係る封止用シートを作製した。
実施例、比較例にて作成した封止用シートからセパレータを剥離し、露出面の表面粗さ(Ra)を、JIS B 0601に基づき、WYKO社製の非接触三次元粗さ測定装置(NT3300)を用いて測定した。測定条件は、50倍とし、測定値は、測定データにMedian filterをかけて求めた。測定は、各封止用シートについて、測定箇所を変更しながら5回行い、その平均値を表面粗さ(Ra)とした。これを硬化前の表面粗さとした。結果を下記表1に示す。
また、実施例、比較例にて作成した封止用シートからセパレータを剥離した後、150℃、1時間の条件で封止用シートを硬化させた。その後、硬化前の表面粗さの測定と同様にして、封止用シートの硬化後の表面粗さを測定した。結果を下記表1に示す。
実施例、比較例にて作成した封止用シートからセパレータを剥離し、露出面が上面となるように置き、レーザー印字装置(商品名「MD-S9900」、KEYENCE社製)を用いて、下記の照射条件にて、レーザー印字した。
<レーザー印字の照射条件>
レーザー波長:532nm
レーザーパワー:1.2W
周波数:32kHz
レーザー印字された接着シートに、KEYENCE社の装置名:CA-DDW8を用いて、封止用シート面に対し全方位方向から斜光照明を照射し、CCDカメラ(装置名:CV-0350)(KEYENCE社製)で反射光を取り込んだ。取り込んだ反射光の明度をKEYENCE社の装置名:CV-5000を用いて測定した。明度測定は、レーザー印字部と非印字部との両方に対して行なった。なお、明度とは、白色を100%と黒色を0%とした値であり、本明細書においては、上述したKEYENCE社の装置名、CV-5000を用いて測定した値とする。レーザー印字部の明度と非印字部の明度の差をコントラスト[%]とし、40%以上の場合を○、40%未満の場合を×として評価した。これを硬化前のコントラストとして評価した。結果を表1に示す。
また、実施例、比較例にて作成した封止用シートからセパレータを剥離した後、150℃、1時間の条件で封止用シートを硬化させた。その後、硬化前のコントラスト評価と同様にして、レーザー印字し、コントラストを評価した。これを硬化後のコントラスト評価とした。結果を下記表1に示す。
20 積層体
22 半導体ウエハ
23 半導体チップ
28 封止体
29 半導体装置
Claims (4)
- 電子デバイスの封止に使用する熱硬化性の封止用シートであって、
一方の面の表面粗さ(Ra)が、3μm以下であることを特徴とする封止用シート。 - 前記一方の面側に、着色剤が添加されていることを特徴とする請求項1に記載の封止用シート。
- 電子デバイスを半導体ウエハの回路形成面にフリップチップボンディングする工程Aと、
前記半導体ウエハにフリップチップボンディングされた前記電子デバイスを封止用シートに埋め込んで封止体を形成する工程Bとを有し、
前記封止用シートにおける前記半導体ウエハと対向する面とは反対の面の表面粗さRa)が、3μm以下であることを特徴とする半導体装置の製造方法。 - 前記封止用シートにおける前記半導体ウエハと対向する面とは反対の面側には、着色剤が添加されていることを特徴とする請求項3に記載の半導体装置の製造方法。
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US14/908,687 US9754894B2 (en) | 2013-08-01 | 2014-06-30 | Sheet for sealing and method for manufacturing semiconductor device using said sheet for sealing |
CN201480043139.2A CN105431937B (zh) | 2013-08-01 | 2014-06-30 | 密封用片、以及使用了该密封用片的半导体装置的制造方法 |
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JP2016139763A (ja) * | 2015-01-29 | 2016-08-04 | ソニー株式会社 | 撮像装置、電子機器 |
KR20180037238A (ko) * | 2015-08-28 | 2018-04-11 | 히타치가세이가부시끼가이샤 | 반도체 장치 및 그 제조 방법 |
JP2017085412A (ja) * | 2015-10-29 | 2017-05-18 | 日本電波工業株式会社 | 水晶デバイス |
US9741617B2 (en) * | 2015-11-16 | 2017-08-22 | Amkor Technology, Inc. | Encapsulated semiconductor package and method of manufacturing thereof |
JP6754183B2 (ja) * | 2015-11-20 | 2020-09-09 | 日東電工株式会社 | 電子デバイス封止用シート、及び、電子デバイスパッケージの製造方法 |
JP6719674B2 (ja) | 2016-12-09 | 2020-07-08 | エルジー・ケム・リミテッド | シール材組成物 |
US10522526B2 (en) * | 2017-07-28 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | LTHC as charging barrier in InFO package formation |
JP2020035820A (ja) * | 2018-08-28 | 2020-03-05 | 太陽誘電株式会社 | モジュールおよびその製造方法 |
JP6795673B2 (ja) * | 2019-12-19 | 2020-12-02 | 日東電工株式会社 | 電子デバイス封止用シート、及び、電子デバイスパッケージの製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0823005A (ja) * | 1993-09-14 | 1996-01-23 | Toshiba Corp | 樹脂封止型半導体装置の製造方法、樹脂封止型半導体装置及び封止用樹脂シート |
WO2005071731A1 (ja) * | 2004-01-22 | 2005-08-04 | Murata Manufacturing Co., Ltd. | 電子部品の製造方法 |
JP2006321216A (ja) * | 2005-04-19 | 2006-11-30 | Hitachi Chem Co Ltd | 封止用シート |
JP2010056328A (ja) * | 2008-08-28 | 2010-03-11 | Furukawa Electric Co Ltd:The | チップ保護用フィルム |
JP2011256372A (ja) * | 2010-05-10 | 2011-12-22 | Ajinomoto Co Inc | 樹脂組成物 |
JP2012028404A (ja) * | 2010-07-20 | 2012-02-09 | Nitto Denko Corp | フリップチップ型半導体裏面用フィルム、及び、ダイシングテープ一体型半導体裏面用フィルム |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5641997A (en) | 1993-09-14 | 1997-06-24 | Kabushiki Kaisha Toshiba | Plastic-encapsulated semiconductor device |
US6365968B1 (en) * | 1998-08-07 | 2002-04-02 | Corning Lasertron, Inc. | Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device |
TW465123B (en) * | 2000-02-02 | 2001-11-21 | Ind Tech Res Inst | High power white light LED |
JP2002229200A (ja) * | 2001-02-02 | 2002-08-14 | Hitachi Chem Co Ltd | 感光性フィルム |
DE602004002623T2 (de) * | 2003-07-17 | 2007-01-18 | Nitto Denko Corporation, Ibaraki | Verfahren zur Herstellung eines Harzverkapselungsscheibchens für Halbleiter |
JP4730652B2 (ja) | 2004-06-02 | 2011-07-20 | ナガセケムテックス株式会社 | 電子部品の製造方法 |
US7422707B2 (en) * | 2007-01-10 | 2008-09-09 | National Starch And Chemical Investment Holding Corporation | Highly conductive composition for wafer coating |
JP4430085B2 (ja) * | 2007-03-01 | 2010-03-10 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP5101931B2 (ja) * | 2007-06-13 | 2012-12-19 | 日東電工株式会社 | 熱硬化型接着シート |
JP5135246B2 (ja) * | 2009-01-30 | 2013-02-06 | 三洋電機株式会社 | 半導体モジュールおよびその製造方法、ならびに携帯機器 |
JP5367656B2 (ja) * | 2010-07-29 | 2013-12-11 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム及びその用途 |
JP5385247B2 (ja) * | 2010-12-03 | 2014-01-08 | 信越化学工業株式会社 | ウエハモールド材及び半導体装置の製造方法 |
US8823186B2 (en) * | 2010-12-27 | 2014-09-02 | Shin-Etsu Chemical Co., Ltd. | Fiber-containing resin substrate, sealed substrate having semiconductor device mounted thereon, sealed wafer having semiconductor device formed thereon, a semiconductor apparatus, and method for manufacturing semiconductor apparatus |
JP2013007028A (ja) | 2011-05-20 | 2013-01-10 | Nitto Denko Corp | 封止用シートおよび電子部品装置 |
JP5884477B2 (ja) * | 2011-12-27 | 2016-03-15 | 日立化成株式会社 | 半導体装置の製造方法、それにより得られる半導体装置及びそれに用いる熱硬化性樹脂組成物 |
-
2013
- 2013-08-01 JP JP2013160535A patent/JP6216180B2/ja not_active Ceased
-
2014
- 2014-06-30 KR KR1020167003670A patent/KR20160037935A/ko not_active Application Discontinuation
- 2014-06-30 SG SG11201600747VA patent/SG11201600747VA/en unknown
- 2014-06-30 US US14/908,687 patent/US9754894B2/en active Active
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- 2014-06-30 CN CN201480043139.2A patent/CN105431937B/zh active Active
- 2014-07-24 TW TW103125382A patent/TWI631669B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0823005A (ja) * | 1993-09-14 | 1996-01-23 | Toshiba Corp | 樹脂封止型半導体装置の製造方法、樹脂封止型半導体装置及び封止用樹脂シート |
WO2005071731A1 (ja) * | 2004-01-22 | 2005-08-04 | Murata Manufacturing Co., Ltd. | 電子部品の製造方法 |
JP2006321216A (ja) * | 2005-04-19 | 2006-11-30 | Hitachi Chem Co Ltd | 封止用シート |
JP2010056328A (ja) * | 2008-08-28 | 2010-03-11 | Furukawa Electric Co Ltd:The | チップ保護用フィルム |
JP2011256372A (ja) * | 2010-05-10 | 2011-12-22 | Ajinomoto Co Inc | 樹脂組成物 |
JP2012028404A (ja) * | 2010-07-20 | 2012-02-09 | Nitto Denko Corp | フリップチップ型半導体裏面用フィルム、及び、ダイシングテープ一体型半導体裏面用フィルム |
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JP2015032660A (ja) | 2015-02-16 |
KR20160037935A (ko) | 2016-04-06 |
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CN105431937B (zh) | 2021-06-25 |
CN105431937A (zh) | 2016-03-23 |
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