WO2015003434A1 - 发光二极管像素单元电路、其驱动方法及显示面板 - Google Patents

发光二极管像素单元电路、其驱动方法及显示面板 Download PDF

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Publication number
WO2015003434A1
WO2015003434A1 PCT/CN2013/085242 CN2013085242W WO2015003434A1 WO 2015003434 A1 WO2015003434 A1 WO 2015003434A1 CN 2013085242 W CN2013085242 W CN 2013085242W WO 2015003434 A1 WO2015003434 A1 WO 2015003434A1
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Prior art keywords
module
light
transistor
node
signal line
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PCT/CN2013/085242
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English (en)
French (fr)
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谭文
祁小敬
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京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Priority to US14/366,881 priority Critical patent/US9697767B2/en
Publication of WO2015003434A1 publication Critical patent/WO2015003434A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0814—Several active elements per pixel in active matrix panels used for selection purposes, e.g. logical AND for partial update
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G09G2320/045—Compensation of drifts in the characteristics of light emitting or modulating elements

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an LED pixel unit circuit, a driving method thereof, and a display panel. Background technique
  • AMOLED Active Matrix Organic Light Emitting Diode
  • AMOLED Active Matrix Organic Light Emitting Diode
  • FIG. 1(b) is The P-type TFT in the prior art drives the AMOLED basic pixel circuit structure.
  • VDATA is the data level signal
  • VSCAN is the scan signal
  • VDD is the high voltage level signal
  • VSS is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇ voltage level signal
  • Tl is the ⁇
  • Oxide TFTs are the development direction of large-size AMOLEDs, and the device characteristics of oxide TFTs are mostly depleted, that is, the N-type threshold voltage is negative.
  • 2 is an I ds -V gs characteristic curve of an N-type depletion TFT in the prior art, wherein I ds is a current between a drain and a source of the TFT, and V gs is between a gate and a source of the TFT; Voltage. It can be seen from Fig. 2 that the most characteristic feature of the N-type depletion TFT is that the threshold voltage is less than zero.
  • Fig. 3(a) shows an AMOLED pixel driving circuit with threshold voltage compensation function in the prior art.
  • the gate of the driving thin film transistor T1 is g, the source is extremely s, the drain is d, C is a storage capacitor, and D1 is a light emitting diode, VINI
  • VDD is the high voltage level signal
  • VSS is the low voltage level signal
  • DATA is the data level signal
  • G n is the gate control signal of the thin film transistors T2 and T4, respectively
  • G n4 is the thin film transistor T5.
  • Gate control signal, EM is thin film crystal Gate control signals for body tubes T3 and ⁇ 6.
  • the threshold voltage is positive, as shown in FIG. 4( a ), the voltage across the storage capacitor can be normally discharged to V TH to realize threshold voltage compensation. However, when the driving thin film transistor is depleted, the threshold voltage is negative. As shown in FIG. 4(b), when the voltage across the storage capacitor is discharged through the diode-connected driving thin film transistor, the source-drain voltage of the driving thin film transistor is changed. At zero-off, the sub-threshold conduction state is still not discharged, that is, the voltage across the storage capacitor is 0 instead of V TH (V TH ⁇ 0), therefore, the pixel drive threshold voltage compensation fails, where Figure 4 (a) And V ds in Fig. 4 (b) represents the voltage between the drain and source of the TFT.
  • the depletion TFT adopts the AMOLED pixel driving circuit design of the conventional N-type TFT, when the threshold voltage is compensated by the diode connection method, since the threshold voltage is a negative value, the TFT enters the subthreshold saturation before the cutoff, the source and drain voltages Zero is terminated early, thus losing the threshold voltage compensation function.
  • Embodiments of the present invention provide an active matrix organic light emitting diode (AMOLED) pixel unit circuit, a driving method thereof, and a display panel for implementing a threshold voltage compensation function.
  • AMOLED active matrix organic light emitting diode
  • An active matrix organic light emitting diode (AMOLED) pixel unit circuit includes:
  • a light emitting module configured to emit light under driving of a driving current
  • a driving module configured to drive the lighting module
  • a light emitting control module configured to gate the light emitting module to cause the light emitting module to emit light
  • a threshold compensation module configured to perform threshold voltage compensation on the driving module
  • a data voltage writing module for inputting a data voltage to the driving module
  • An initialization module for initializing the threshold compensation module includes the AMOLED pixel unit circuit.
  • a method for driving a pixel unit circuit according to an embodiment of the present invention the pixel unit circuit includes the active matrix light emitting diode pixel unit circuit, and the method includes the following steps:
  • the displaying step causes the light emitting module to emit light under the driving of the driving current.
  • the AMOLED pixel unit circuit includes a light emitting module; a driving module for driving the light emitting module; An illumination control module for controlling illumination of the illumination module; a threshold compensation module for threshold voltage compensation of the drive module; a data voltage writing module for inputting a data voltage to the driving module; and an initialization module for initializing the threshold compensation module
  • the driving TFT gate is fixedly set to a data level lower than the high level, so that in the compensation phase, the sub-threshold saturation cut-off state is entered before the source-drain voltage is zero, and the threshold voltage compensation is realized.
  • FIG. 1(a) and 1(b) are schematic diagrams showing the structure of a basic pixel circuit of an AMOLED in the prior art; and FIG. 2 is a graph showing current-voltage characteristics of a depletion TFT in the prior art;
  • FIG. 3( a ) and FIG. 3( b ) are schematic diagrams of an AMOLED pixel driving circuit commonly having a threshold voltage compensation function in the prior art
  • FIG. 4( a ) is a schematic diagram of circuit-enhanced TFT threshold voltage compensation in the prior art
  • FIG. 4 ( b ) is a schematic diagram of a circuit depletion TFT threshold voltage compensation failure in the prior art
  • FIG. 5 is a schematic diagram of a circuit of an AMOLED pixel unit of a depletion TFT threshold voltage compensation according to an embodiment of the invention
  • FIG. 6 is a timing diagram of control signals of an AMOLED pixel unit circuit of a depletion TFT threshold voltage compensation according to an embodiment of the present invention
  • FIG. 7(a), 7(b), and 7(c) are schematic diagrams showing the operation principle of a depletion TFT threshold voltage compensation AMOLED pixel unit circuit according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of a threshold voltage compensation implementation of a depletion TFT according to an embodiment of the present invention
  • FIG. 9 is a circuit diagram of an AMOLED pixel unit of a depletion TFT threshold voltage compensation according to another embodiment of the present invention. detailed description
  • an active matrix organic light emitting diode is provided
  • the AMOLED pixel unit circuit, its driving method, and the display panel are used to implement the threshold voltage compensation function.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • FIG. 5 an active matrix organic light emitting diode according to an embodiment of the present invention is shown.
  • the AMOLED pixel unit circuit includes: a light emitting module 50, a driving module 51, an illumination control module 52, a threshold compensation module 53, a data voltage writing module 54, and an initialization module 55;
  • the driving module 51 is used to drive the light emitting module 50;
  • the illumination control module 52 is configured to control whether the illumination module 50 emits light
  • the threshold compensation module 53 is configured to perform threshold voltage compensation on the driving module 51.
  • the data voltage writing module 54 is configured to input a data voltage to the driving module 51;
  • the initialization module 55 is used to initialize the threshold compensation module 53.
  • the driving module 51 includes a first transistor T1 whose gate is connected to the first node N1 of the circuit, and the other two poles respectively correspond to the second node N2 of the circuit and a high voltage level signal line (corresponding to The high voltage level signal VDD is connected; wherein the first node N1 is a common connection point between the driving module 51 and the lighting control module 52 and the data voltage writing module 54, and the second node N2 It is a common connection point of the driving module 51, the lighting control module 52, the threshold compensation module 53 and the initialization module 55.
  • the illuminating control module 52 includes a second transistor T2 and a sixth transistor T6, wherein a gate of the second transistor T2 is connected to a second control signal line (corresponding to the AMOLED pixel unit circuit second control signal S2), The other two poles are respectively connected to the first node N1 and the third node N3; the gate of the sixth transistor T6 is connected to the second control signal line (corresponding to the second control signal S2 of the AMOLED pixel unit circuit), and the other two poles are respectively connected to the second node N2
  • the third node N3 is a common connection point between the initialization module 55 and the illumination control module 52 and the threshold compensation module 53.
  • the light emitting module 50 includes a light emitting diode D1 having an anode connected to the light emitting control module 52 and a cathode connected to a low voltage level signal line (corresponding to a low voltage level signal VSS).
  • the light emitting diode D1 is an organic light emitting diode.
  • the threshold compensation module 53 includes a storage capacitor C1 having one end connected to the second node N2 and the other end connected to the third node N3.
  • the data voltage writing module 54 includes a third transistor T3, wherein a gate of the third transistor T3 is connected to a first control signal line (corresponding to the first control signal S1 of the AMOLED pixel unit circuit), and the other two poles are respectively Connecting with the first node N1 and a data signal line (corresponding to a data level signal VDATA);
  • the initialization module 55 includes a fourth transistor T4 and a fifth transistor T5, wherein the gate of the fourth transistor T4 is connected to the first control signal line (corresponding to the AMOLED pixel unit circuit first control signal S1), and the other two poles Connected to the high voltage level signal line (corresponding to the high voltage level signal VDD) and the third node N3, respectively; the gate of the fifth transistor T5 and the third control signal line (corresponding to the third control signal S3 of the AMOLED pixel unit circuit) Connected, the other two poles are respectively connected to the second node N2 and the data signal line (corresponding to the data level signal VDATA).
  • the gate of the fourth transistor T4 is connected to the first control signal line (corresponding to the AMOLED pixel unit circuit first control signal S1), and the other two poles Connected to the high voltage level signal line (corresponding to the high voltage level signal VDD) and the third node N3, respectively; the gate of the fifth transistor T5 and the third control signal line (corresponding to the third control signal S3 of the A
  • the transistors T1, ⁇ 2, ⁇ 3, ⁇ 4, ⁇ 5, and ⁇ 6 are all ⁇ -type thin film transistors.
  • FIG. 6 The working principle of the AMOLED pixel unit circuit of the first embodiment of the present invention will be described below with reference to FIG. 6, FIG. 7(a), FIG. 7(b) and FIG. 7(c).
  • FIG. 6 is a timing diagram of control signals of an AMOLED pixel unit circuit according to an embodiment of the present invention.
  • S1 and S2 are control signals of opposite polarities
  • S3 is an initialization control signal.
  • the operation of the AMOLED pixel unit circuit includes three phases: an initialization phase a, a data write and threshold compensation phase b, and an OLED illumination display phase c.
  • the first control signal S1 and the third control signal that is, the initialization control signal S3 is at a high level
  • the second control signal S2 is at a low level
  • DATA is The data level signal VDATA whose voltage is called gray scale voltage V DATA ( V SS ⁇ V DAT A ⁇ V DD ), where V ss is the voltage of the low voltage level signal VSS, and V DD is the high voltage level signal VDD Voltage, transistors T3, ⁇ 4 and ⁇ 5 are turned on, and transistors ⁇ 2 and ⁇ 6 are turned off.
  • the gate of the transistor T1 is charged to V DATA
  • the storage capacitor C1 is connected to the source of the transistor T1 and charged to V DATA
  • the other end is charged V DD
  • the voltage across the storage capacitor CI is V DD -V DATA .
  • transistors T3 and T4 are turned on, and transistors T2, ⁇ 5 and ⁇ 6 are turned off.
  • the gate of the transistor T1 is kept at V DATA . Since V TH ⁇ 0, the voltage across the storage capacitor C1 is still charged through the transistor T1 until the T1 subthreshold is saturated, that is, the source level of T1 is V DATA -V TH , where
  • V ds in FIG. 8 represents the voltage between the drain and the source of the TFT.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • another active matrix organic light emitting diode (AMOLED) pixel unit circuit includes: a light emitting module 80, a driving module 81, an illumination control module 82, a threshold compensation module 83, a data voltage writing module 84, and Initialization module 85; wherein
  • the driving module 81 is used to drive the light emitting module 80;
  • the illumination control module 82 is configured to control whether the illumination module 80 emits light
  • the threshold compensation module 83 is configured to perform threshold voltage compensation on the driving module 81;
  • the data voltage writing module 84 is configured to input a data voltage to the driving module 81;
  • the initialization module 85 is used to initialize the threshold compensation module 83.
  • the driving module 81 includes a first transistor T1 whose gate is connected to the first node N1 of the circuit, and the other two poles respectively correspond to the second node N2 of the circuit and a high voltage level signal line (corresponding to The high voltage level signal VDD is connected; wherein the first node N1 is a common connection point between the driving module 81 and the light emission control module 82 and the data voltage writing module 84, and the second node N2 It is a common connection point of the driving module 81, the lighting control module 82, the threshold compensation module 83, and the data initialization module 85.
  • the illuminating control module 82 includes a second transistor T2 and a sixth transistor T6, wherein a gate of the second transistor T2 is connected to a second control signal line (corresponding to the AMOLED pixel unit circuit second control signal S2), The other two poles are respectively connected to the first node N1 and the third node N3; the gate of the sixth transistor T6 is connected to the second control signal line (corresponding to the second control signal S2 of the AMOLED pixel unit circuit), and the other two poles are respectively connected to the second node N2
  • the third node N3 is a common connection point between the initialization module 55 and the illumination control module 82 and the threshold compensation module 83.
  • the light emitting module 80 includes a light emitting diode D1 having one end connected to the light emitting control module 82 and the other end connected to a low voltage level signal line (corresponding to a low voltage level signal VSS).
  • the threshold compensation module 83 includes a storage capacitor C1 having one end connected to the second node N2 and the other end connected to the third node N3.
  • the data voltage writing module 84 includes a third transistor T3, wherein a gate of the third transistor T3 is connected to a first control signal line (corresponding to the first control signal S1 of the AMOLED pixel unit circuit), and the other two poles are respectively Connecting with the first node N1 and a data signal line (corresponding to a data level signal VDATA);
  • the initialization module 85 includes a fourth transistor T4 and a fifth transistor T5, wherein a gate of the fourth transistor T4 is connected to the first control signal line (corresponding to the first control signal S1 of the AMOLED pixel unit circuit), and the other two poles Connected to the high voltage level signal line (corresponding to the high voltage level signal VDD) and the third node N3, respectively; the gate of the fifth transistor T5 and the third control signal line (corresponding to the third control signal S3 of the AMOLED pixel unit circuit) Connected, the other two poles are respectively connected to the second node N2 and the low voltage level signal line (corresponding to the low voltage level signal VSS).
  • the anode of the light emitting diode D1 is connected to the sixth transistor T6, and the cathode is connected to a low voltage level signal line (corresponding to the low voltage level signal VSS).
  • the transistors T1, ⁇ 2, ⁇ 3, ⁇ 4, ⁇ 5, and ⁇ 6 are all ⁇ -type thin film transistors.
  • the working principle of the circuit of the second embodiment of the present invention is the same as that of the circuit of the first embodiment of the present invention. The only difference is that the end of the capacitor C1 connected to the source of the transistor T1 is charged to a different voltage during initialization, so no further description is provided herein. .
  • the embodiment of the invention further provides a display panel, including the AMOLED pixel unit Road.
  • the pixel unit circuit includes the above-described active matrix light emitting diode pixel unit circuit, the method comprising the following steps: an initialization step, performing a threshold compensation module Initialize
  • the displaying step causes the light emitting module to emit light under the driving of the driving current.
  • the AMOLED pixel unit circuit includes a light emitting module; a driving module for driving the light emitting module; An illumination control module for controlling illumination of the illumination module; a threshold compensation module for threshold voltage compensation of the drive module; a charging module for charging the threshold compensation module; and a data voltage writing module for inputting a data voltage to the driving module,
  • the gate of the driving TFT is fixedly set to a data level lower than the high level, so that in the compensation phase, the sub-threshold saturation cut-off state is entered before the source-drain voltage is zero, and the threshold voltage compensation is realized.

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  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
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  • Electroluminescent Light Sources (AREA)
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Abstract

公开了一种有源矩阵有机发光二极管AMOLED像素单元电路、其驱动方法以及显示面板，用于实现阈值电压补偿。所述 AMOLED像素单元电路包括发光模块；用于驱动发光模块的驱动模块；用于控制发光模块发光的发光控制模块；用于对驱动模块进行阈值电压补偿的阈值补偿模块；用于给驱动模块输入数据电压的数据电压写入模块；以及用于将阈值补偿模块初始化的初始化模块。通过改进预充电方式，使驱动 TFT栅极固定设置为低于高电平的数据电平，从而在补偿阶段，源漏电压为零之前就进入亚阈饱和截止状态，实现阈值电压补偿。

Description

发光二极管像素单元电路、 其驱动方法及显示面板 技术领域
本发明涉及显示技术领域， 具体涉及一种发光二极管像素单元电路、 其 驱动方法及显示面板。 背景技术
在显示技术领域，有源矩阵有机发光二极管（ Active Matrix Organic Light Emitting Diode, AMOLED )显示装置以其超薄、 抗震性能好、 可视角度大、 响应时间短、 低温性好、 发光效率高、 可制成柔性显示器等多种优点， 逐渐 受到人们的关注。 图 1(a)是现有技术中的 N 型薄膜晶体管 （Thin Film Transistor, TFT )驱动有源矩阵有机发光二极管（ Active Matrix Organic Light Emitting Diode, AMOLED )基本像素电路结构， 图 1(b)是现有技术中的 P 型 TFT驱动 AMOLED基本像素电路结构。 图 1(a)和图 1(b)中的 VDATA为 数据电平信号， VSCAN为扫描信号， VDD为高电压电平信号， VSS为氐电 压电平信号， Tl、 Τ2为薄膜晶体管， C1为电容， D1为发光二极管。 图 1(a) 和图 1(b)中的电路适用于所有类型晶体管， 包括耗尽型 TFT, 但该像素电路 不具有阈值电压补偿功能， 不能解决由于工艺均匀性导致的阈值电压均一性 问题和有机发光二极管 （ Organic Light Emitting Diode, OLED )驱动发光均 一性问题。
氧化物 TFT是大尺寸 AMOLED的发展方向，氧化物 TFT的器件特性大 都具有耗尽型的特点， 即 N型阈值电压为负。 图 2为现有技术中 N型耗尽型 TFT的 Ids-Vgs特性曲线，其中， Ids为 TFT漏极与源极之间的电流， Vgs为 TFT 栅极与源极之间的电压。由图 2可以看出 N型耗尽型 TFT的最大特点是阈值 电压小于 0。
图 3 ( a ) 为现有技术中常见具有阈值电压补偿功能的 AMOLED像素驱 动电路， 驱动薄膜晶体管 T1的栅极为 g, 源极为 s, 漏极为 d, C为存储电 容， D1为发光二极管， VINI为初始电平信号， VDD为高电压电平信号， VSS 为低电压电平信号， DATA为数据电平信号， Gn分别为薄膜晶体管 T2和 T4 的栅极控制信号， Gn4为薄膜晶体管 T5的栅极控制信号， EM分别为薄膜晶 体管 T3和 Τ6的栅极控制信号。 在电压编程阶段， 如图 3 ( b )所示， 首先切 断 T1与高电压电平信号 VDD和低电压电平信号 VSS的联系， 将存储电容 接 T1栅极 g的一端充电至初始电平电压 VJM, 存储电容连接 T1源极 s的一 端充电至数据电平电压 VDATA, 然后将驱动薄膜晶体管 T1的栅极 g与漏极 d 连接（即， 使图 3 ( a ) 中的晶体管 T4导通 )组成二极管连接方式进行放电， 即将存储电容两端电压由 VJM-VDATA放电至驱动薄膜晶体管 T1亚阈导通状态 VTH。 其中， VTH表示 T1的阈值电压。 当驱动薄膜晶体管为一般增强型特性 时， 阈值电压为正， 如图 4 ( a )所示， 存储电容两端电压可以正常放电至 VTH, 实现阈值电压补偿。 但是， 当驱动薄膜晶体管为耗尽型特性时， 阈值 电压为负， 如图 4 ( b )所示， 存储电容两端电压通过二极管连接的驱动薄膜 晶体管放电时， 驱动薄膜晶体管的源漏电压变为零截止时， 依然未放电达到 亚阈导通状态， 即存储电容两端电压为 0, 而不是 VTH ( VTH<0 ), 因此， 像 素驱动阈值电压补偿失效， 其中图 4 ( a )和图 4 ( b )中的 Vds表示 TFT漏极 与源极之间的电压。
综上所述， 耗尽型 TFT若采用传统 N型 TFT的 AMOLED像素驱动电 路设计，在采用二极管连接方式补偿阈值电压时， 由于阈值电压为负值， TFT 进入亚阈饱和截止之前， 源漏电压为零而提前截止， 从而失去阈值电压补偿 功能。 发明内容
本发明实施例提供了一种有源矩阵有机发光二极管 AMOLED像素单元 电路、 其驱动方法， 以及显示面板， 用于实现阈值电压补偿功能。
本发明实施例的一种有源矩阵有机发光二极管 AMOLED 像素单元电 路， 包括：
发光模块， 用于在驱动电流的驱动下发光；
驱动模块， 用于驱动发光模块；
发光控制模块， 用于选通发光模块以使所述发光模块发光；
阈值补偿模块， 用于对驱动模块进行阈值电压补偿；
数据电压写入模块， 用于给驱动模块输入数据电压；
初始化模块， 用于将阈值补偿模块初始化。 本发明实施例的一种显示面板， 包括所述 AMOLED像素单元电路。 本发明实施例的一种像素单元电路的驱动方法， 所述像素单元电路包括 所述的有源矩阵发光二极管像素单元电路， 所述方法包括下述步骤：
初始化步骤， 对阈值补偿模块进行初始化；
数据写入和阈值补偿步骤， 给驱动模块输入数据电压并对驱动模块进行 阈值电压补偿；
显示步骤， 使发光模块在驱动电流的驱动下发光显示。
综上所述， 本发明实施例的一种有源矩阵有机发光二极管 AMOLED像 素单元电路、 其驱动方法以及显示面板中， 所述 AMOLED像素单元电路包 括发光模块； 用于驱动发光模块的驱动模块； 用于控制发光模块发光的发光 控制模块； 用于对驱动模块进行阈值电压补偿的阈值补偿模块； 用于给驱动 模块输入数据电压的数据电压写入模块以及用于将阈值补偿模块初始化的初 始化模块， 通过改进预充电方式， 使驱动 TFT栅极固定设置为低于高电平的 数据电平， 从而在补偿阶段， 源漏电压为零之前就进入亚阈饱和截止状态， 实现阈值电压补偿。 附图说明
图 l(a)、 图 1(b)是现有技术中的 AMOLED基本像素电路结构示意图； 图 2是现有技术中耗尽型 TFT电流 -电压特性曲线图；
图 3( a )、图 3( b )是现有技术中常见具有阈值电压补偿功能的 AMOLED 像素驱动电路示意图；
图 4 ( a )是现有技术中电路增强型 TFT阈值电压补偿示意图； 图 4 ( b ) 是现有技术中电路耗尽型 TFT阈值电压补偿失效示意图；
图 5是本发明实施例的一种耗尽型 TFT阈值电压补偿的 AMOLED像素 单元电路示意图；
图 6是本发明实施例的耗尽型 TFT阈值电压补偿的 AMOLED像素单元 电路的控制信号的时序图；
图 7 ( a )、 图 7 ( b )、 图 7 ( c )是本发明实施例的一种耗尽型 TFT阈值 电压补偿的 AMOLED像素单元电路的工作原理示意图；
图 8是本发明实施例的耗尽型 TFT阈值电压补偿实现的示意图； 图 9是本发明另一实施例的一种耗尽型 TFT阈值电压补偿的 AMOLED 像素单元电路示意图。 具体实施方式
按照本发明的示例性实施例， 提供了一种有源矩阵有机发光二极管
AMOLED像素单元电路、 其驱动方法， 以及显示面板， 用于实现阈值电压 补偿功能。
下面给出按照本发明实施例的技术方案的详细举例说明。
实施例一：
参见图 5 , 其中示出本发明实施例的一种有源矩阵有机发光二极管
AMOLED像素单元电路， 包括： 发光模块 50、 驱动模块 51、 发光控制模块 52、 阈值补偿模块 53、 数据电压写入模块 54和初始化模块 55; 其中，
驱动模块 51用于驱动发光模块 50;
发光控制模块 52用于控制发光模块 50是否发光；
阈值补偿模块 53用于对驱动模块 51进行阈值电压补偿；
数据电压写入模块 54用于给驱动模块 51输入数据电压；
初始化模块 55用于将阈值补偿模块 53初始化。
可选择地， 所述驱动模块 51包括第一晶体管 T1 , 其栅极与所述电路的 第一节点 N1连接，另外两极分别与所述电路的第二节点 N2和高电压电平信 号线（对应高电压电平信号 VDD )连接； 其中， 所述第一节点 N1为所述驱 动模块 51与所述发光控制模块 52和所述数据电压写入模块 54的共同连接 点， 所述第二节点 N2为所述驱动模块 51、 所述发光控制模块 52、 所述阈值 补偿模块 53和所述初始化模块 55的共同连接点。
可选择地， 所述发光控制模块 52包括第二晶体管 T2和第六晶体管 T6, 其中， 第二晶体管 T2的栅极与第二控制信号线（对应 AMOLED像素单元电 路第二控制信号 S2 )连接， 另外两极分别与第一节点 N1和第三节点 N3连 接； 第六晶体管 T6的栅极与第二控制信号线（对应 AMOLED像素单元电路 第二控制信号 S2 )连接， 另外两极分别与第二节点 N2和发光模块 50连接； 其中， 所述第三节点 N3为所述初始化模块 55与所述发光控制模块 52和所 述阈值补偿模块 53的共同连接点。 可选择地， 所述发光模块 50包括发光二极管 D1 , 其阳极与所述发光控 制模块 52连接， 阴极与低电压电平信号线（对应低电压电平信号 VSS )连 接。
可选择地， 所述发光二极管 D1为有机发光二极管。
可选择地， 所述阈值补偿模块 53包括存储电容 C1 , 其一端与所述第二 节点 N2连接， 另一端与所述第三节点 N3连接。
可选择地， 所述数据电压写入模块 54包括第三晶体管 T3, 其中， 第三 晶体管 T3的栅极与第一控制信号线（对应 AMOLED像素单元电路第一控制 信号 S1 )连接， 另外两极分别与所述第一节点 N1和数据信号线（对应数据 电平信号 VDATA )连接；
可选择地，所述初始化模块 55包括第四晶体管 T4和第五晶体管 T5,其 中第四晶体管 T4的栅极与第一控制信号线（对应 AMOLED像素单元电路第 一控制信号 S1 )连接， 另外两极分别与高电压电平信号线（对应高电压电平 信号 VDD )和所述第三节点 N3连接； 第五晶体管 T5的栅极与第三控制信 号线（对应 AMOLED像素单元电路第三控制信号 S3 )连接， 另外两极分别 与所述第二节点 N2和数据信号线 （对应数据电平信号 VDATA )连接。
可选择地， 所述晶体管 Tl、 Τ2、 Τ3、 Τ4、 Τ5和 Τ6均为 Ν型薄膜晶体 管。
下面结合图 6、 图 7 ( a )、 图 7 ( b )和图 7 ( c )说明本发明实施例一的 AMOLED像素单元电路的工作原理。
图 6为本发明实施例提供的 AMOLED像素单元电路的控制信号的时序 图。 如图 6所示， S1和 S2为极性相反的控制信号， S3为初始化控制信号。 该 AMOLED像素单元电路的工作包括三个阶段：初始化阶段 a、数据写入和 阈值补偿阶段 b和 OLED发光显示阶段 c。
在初始化阶段 a: 如图 6和图 7 ( a )所示， 第一控制信号 S1和第三控制 信号， 即初始化控制信号 S3为高电平， 第二控制信号 S2为低电平， DATA 为数据电平信号 VDATA, 其电压称为灰阶电压 VDATA ( VSS<VDATA<VDD ), 其 中 Vss为低电压电平信号 VSS的电压， VDD为高电压电平信号 VDD的电压， 晶体管 T3、 Τ4和 Τ5导通， 晶体管 Τ2和 Τ6截止。 晶体管 T1的栅极充电至 VDATA, 存储电容 C1连接晶体管 T1源极的一端充电至 VDATA, 另一端充电为 VDD, 则存储电容 CI两端电压为 VDD-VDATA。
在数据写入和阈值补偿阶段 b: 如图 6和图 7 ( b )所示， S1为高电平，
S2和 S3为低电平， 晶体管 T3和 T4导通， 晶体管 T2、 Τ5和 Τ6截止。 晶体 管 T1栅极保持为 VDATA, 由于 VTH<0, 存储电容 C1两端电压依然通过晶体 管 T1充电直至 T1亚阈饱和截止， 即 T1的源极电平为 VDATA-VTH, 其中，
VTH表示 T1的阈值电压。 而存储电容 C1另一端仍然保持为 VDD, 则存储电 容 C1两端电压为 VDD- ( VDATA-VTH ) =VDD-VDATA+VTH。
在 OLED发光显示阶段 c: 如图 6和图 7 ( c )所示， S2为高电平， S1 和 S3为低电平， 晶体管 T3、 Τ4和 Τ5截止， 晶体管 Τ2和 Τ6导通， 晶体管 T1 栅源 电压为 VDD-VDATA+VTH , 因 此， 晶体管 T1 漏 电流为
IDS=^k .(VDD-VDATA +VTH-VTH )2 = k .(VDD-VDATA )2 , 其中， k为预设常数， 发光二极 管 D1在晶体管 T1漏电流驱动下发光显示， 同时晶体管 T1漏电流与阈值电 压无关， 实现了对 T1阈值电压的补偿。
由于上述 T1漏电流与阈值电压无关， 因此本发明实施例的耗尽型 TFT 能够实现阈值电压补偿， 如图 8所示， 图 8中的 Vds表示 TFT漏极与源极之 间的电压。
实施例二：
参见图 9,本发明实施例的另外一种有源矩阵有机发光二极管 AMOLED 像素单元电路， 包括： 发光模块 80、 驱动模块 81、 发光控制模块 82、 阈值 补偿模块 83、 数据电压写入模块 84和初始化模块 85; 其中，
驱动模块 81用于驱动发光模块 80;
发光控制模块 82用于控制发光模块 80是否发光；
阈值补偿模块 83用于对驱动模块 81进行阈值电压补偿；
数据电压写入模块 84用于给驱动模块 81输入数据电压；
初始化模块 85用于将阈值补偿模块 83初始化。
可选择地， 所述驱动模块 81包括第一晶体管 T1 , 其栅极与所述电路的 第一节点 N1连接，另外两极分别与所述电路的第二节点 N2和高电压电平信 号线（对应高电压电平信号 VDD )连接； 其中， 所述第一节点 N1为所述驱 动模块 81与所述发光控制模块 82和所述数据电压写入模块 84的共同连接 点， 所述第二节点 N2为所述驱动模块 81、 所述发光控制模块 82、 所述阈值 补偿模块 83和所述数据初始化模块 85的共同连接点。 可选择地， 所述发光控制模块 82包括第二晶体管 T2和第六晶体管 T6, 其中， 第二晶体管 T2的栅极与第二控制信号线（对应 AMOLED像素单元电 路第二控制信号 S2 )连接， 另外两极分别与第一节点 N1和第三节点 N3连 接； 第六晶体管 T6的栅极与第二控制信号线（对应 AMOLED像素单元电路 第二控制信号 S2 )连接， 另外两极分别与第二节点 N2和发光模块 80连接； 其中， 所述第三节点 N3为所述初始化模块 55与所述发光控制模块 82和所 述阈值补偿模块 83的共同连接点。
可选择地， 所述发光模块 80包括发光二极管 D1 , 其一端与所述发光控 制模块 82连接， 另一端与低电压电平信号线（对应低电压电平信号 VSS ) 连接。
可选择地， 所述阈值补偿模块 83包括存储电容 C1 , 其一端与所述第二 节点 N2连接， 另一端与所述第三节点 N3连接。
可选择地， 所述数据电压写入模块 84包括第三晶体管 T3, 其中， 第三 晶体管 T3的栅极与第一控制信号线（对应 AMOLED像素单元电路第一控制 信号 S1 )连接， 另外两极分别与所述第一节点 N1和数据信号线（对应数据 电平信号 VDATA )连接；
可选择地，所述初始化模块 85包括第四晶体管 T4和第五晶体管 T5,其 中第四晶体管 T4的栅极与第一控制信号线（对应 AMOLED像素单元电路第 一控制信号 S1 )连接， 另外两极分别与高电压电平信号线（对应高电压电平 信号 VDD )和所述第三节点 N3连接； 第五晶体管 T5的栅极与第三控制信 号线（对应 AMOLED像素单元电路第三控制信号 S3 )连接， 另外两极分别 与所述第二节点 N2和低电压电平信号线（对应低电压电平信号 VSS )连接。
可选择地， 所述发光二极管 D1的阳极与所述第六晶体管 T6连接， 阴极 与低电压电平信号线 （对应低电压电平信号 VSS )连接。
可选择地， 所述晶体管 Tl、 Τ2、 Τ3、 Τ4、 Τ5和 Τ6均为 Ν型薄膜晶体 管。
本发明实施例二的电路的工作原理与本发明实施例一的电路的工作原理 相同， 区别仅在于初始化时将电容 C1连接晶体管 T1源极的一端充电至不同 的电压， 故在此不予赘述。
本发明实施例还提供了一种显示面板， 包括所述 AMOLED像素单元电 路。
本发明实施例提供的一种像素单元电路的驱动方法， 所述像素单元电路 包括以上所述的有源矩阵发光二极管像素单元电路，所述方法包括下述步骤： 初始化步骤， 对阈值补偿模块进行初始化；
数据写入和阈值补偿步骤， 给驱动模块输入数据电压并对驱动模块进行 阈值电压补偿；
显示步骤， 使发光模块在驱动电流的驱动下发光显示。
综上所述， 在本发明实施例的有源矩阵有机发光二极管 AMOLED像素 单元电路、 其驱动方法以及显示面板中， 所述 AMOLED像素单元电路包括 发光模块； 用于驱动发光模块的驱动模块； 用于控制发光模块发光的发光控 制模块； 用于对驱动模块进行阈值电压补偿的阈值补偿模块； 用于为阈值补 偿模块充电的充电模块以及用于给驱动模块输入数据电压的数据电压写入模 块， 通过改进预充电方式， 使驱动 TFT栅极固定设置为低于高电平的数据电 平， 从而在补偿阶段， 源漏电压为零之前就进入亚阈饱和截止状态， 实现阈 值电压补偿。
尽管上述实施例中， 以有机发光二极管为例进行了说明， 然而本领域的 技术人员应当明白， 上述像素电路可以应用于其他发光二极管 （例如无机发 光二极管） 的驱动， 而不仅限于有机发光二极管。 发明的精神和范围。 这样， 倘若本发明的这些修改和变型属于本发明权利要 求及其等同技术的范围之内， 则本发明也意图包含这些改动和变型在内。

Claims

权 利 要 求 书
1、 一种有源矩阵发光二极管像素单元电路， 包括：
发光模块， 用于在驱动电流的驱动下发光；
驱动模块， 用于驱动发光模块；
发光控制模块， 用于选通发光模块以使所述发光模块发光；
阈值补偿模块， 用于对驱动模块进行阈值电压补偿；
数据电压写入模块， 用于给驱动模块输入数据电压；
初始化模块， 用于将阈值补偿模块初始化。
2、 根据权利要求 1所述的电路， 其中， 所述驱动模块包括第一晶体管， 其栅极与所述电路的第一节点连接， 另外两极分别与所述电路的第二节点和 高电压电平信号线连接； 其中， 所述第一节点为所述驱动模块与所述发光控 制模块和所述数据电压写入模块的共同连接点， 所述第二节点为所述驱动模 块、所述发光控制模块、所述阈值补偿模块和所述初始化模块的共同连接点。
3、根据权利要求 2所述的电路， 其中， 所述发光控制模块包括第二晶体 管和第六晶体管， 其中， 第二晶体管的栅极与第二控制信号线连接， 另外两 极分别与第一节点和第三节点连接； 第六晶体管的栅极与第二控制信号线连 接， 另外两极分别与第二节点和发光模块连接； 其中， 所述第三节点为所述 初始化模块与所述发光控制模块和所述阈值补偿模块的共同连接点。
4、 根据权利要求 3所述的电路， 其中， 所述发光模块包括发光二极管， 其阳极与所述发光控制模块连接， 阴极与低电压电平信号线连接。
5、根据权利要求 4所述的电路， 其中， 所述发光二极管为有机发光二极 管。
6、根据权利要求 2所述的电路，其中，所述阈值补偿模块包括存储电容， 其一端与所述第二节点连接， 另一端与所述第三节点连接。
7、根据权利要求 2所述的电路， 其中， 所述数据电压写入模块包括第三 晶体管， 其中， 第三晶体管的栅极与第一控制信号线连接， 另外两极分别与 所述第一节点和数据信号线连接。
8、根据权利要求 2所述的电路， 其中， 所述初始化模块包括第四晶体管 和第五晶体管， 所述第四晶体管的栅极与第一控制信号线连接， 另外两极分 别与高电压电平信号线和所述第三节点连接； 第五晶体管的栅极与第三控制 信号线连接， 另外两极分别与所述第二节点和数据信号线连接。
9、根据权利要求 2所述的电路， 其中， 所述初始化模块包括第四晶体管 和第五晶体管， 所述第四晶体管的栅极与第一控制信号线连接， 另外两极分 别与高电压电平信号线和所述第三节点连接； 所述第五晶体管的栅极与第三 控制信号线连接， 另外两极分别与所述第二节点和低电压电平信号线连接。
10、 根据权利要求 2-9任一权项所述的电路， 其中， 所述晶体管均为 N 型薄膜晶体管 TFT。
11、一种显示面板， 包括权利要求 1-10任一权项所述的有源矩阵发光二 极管像素单元电路。
12、一种像素单元电路的驱动方法，所述像素单元电路为如权利要求 1-10 任一权项所述的有源矩阵发光二极管像素单元电路，所述方法包括下述步骤： 初始化步骤， 对阈值补偿模块进行初始化；
数据写入和阈值补偿步骤， 给驱动模块输入数据电压并对驱动模块进行 阈值电压补偿；
显示步骤， 使发光模块在驱动电流的驱动下发光显示。
PCT/CN2013/085242 2013-07-08 2013-10-15 发光二极管像素单元电路、其驱动方法及显示面板 WO2015003434A1 (zh)

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