WO2014207987A1 - Élément électroluminescent et procédé de fabrication d'élément électroluminescent - Google Patents

Élément électroluminescent et procédé de fabrication d'élément électroluminescent Download PDF

Info

Publication number
WO2014207987A1
WO2014207987A1 PCT/JP2014/002574 JP2014002574W WO2014207987A1 WO 2014207987 A1 WO2014207987 A1 WO 2014207987A1 JP 2014002574 W JP2014002574 W JP 2014002574W WO 2014207987 A1 WO2014207987 A1 WO 2014207987A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
layer
light
quaternary
emitting element
Prior art date
Application number
PCT/JP2014/002574
Other languages
English (en)
Japanese (ja)
Inventor
実 川原
鈴木　金吾
Original Assignee
信越半導体株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Priority to CN201480033929.2A priority Critical patent/CN105283970B/zh
Publication of WO2014207987A1 publication Critical patent/WO2014207987A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Definitions

  • the present invention relates to a light emitting element having a quaternary light emitting layer and window layers above and below, and a method for manufacturing the light emitting element.
  • a quaternary light emitting layer and a light extraction window layer are grown on a GaAs substrate as a growth substrate in a MOVPE reactor.
  • a light emitting device of a type in which a thicker window layer is grown on the window layer in the reactor and then formed into chips is improved by increasing the thickness of the window layer.
  • the material of the window layer is selected to be transparent to the light emitted from the quaternary light emitting layer.
  • this type of light-emitting element light emitted from the light-emitting layer is extracted from the upper and lower window layers, so that higher luminance can be achieved.
  • the surface of the GaP window layer is roughened by performing wet etching with an etching solution containing iodine, acetic acid, hydrofluoric acid, and nitric acid using GaP as the window layer.
  • the GaP window layer is etched as described above, but the quaternary light emitting layer is not etched. Therefore, the side surface of the quaternary light emitting layer is outside the side surface of the window layer.
  • the side surface of the light emitting element is formed in a convex shape. In this state, when the light emitting element is sealed with resin to manufacture the light emitting device, the chemical solution that has entered the light emitting device through the lead frame easily erodes the light emitting layer that protrudes to the outside.
  • the portion disappeared by the erosion of the luminescent layer becomes a cavity, and the chemical solution becomes more easily penetrated, and the reaction amount increases at an accelerated rate. As a result, the light emitting element is likely to be broken and unlit. Even when the lamp is not turned off, if the light emitting layer protrudes to the outside, there is a problem in that the light emission output and Vf fluctuate.
  • the present invention has been made in view of the above-described problems, and provides a high-luminance light-emitting element that can reduce the problem of being destroyed and become unlit, and that can suppress fluctuations in light output and Vf, and a method for manufacturing the same. With the goal.
  • a quaternary luminescent layer a first window layer formed on one main surface side of the quaternary luminescent layer, and the other of the quaternary luminescent layer.
  • a light emitting device having a second window layer formed on the main surface side of the light emitting device, wherein a side surface of the quaternary light emitting layer is recessed inside the light emitting device from a side surface of the first and second window layers.
  • Such a light-emitting element can suppress fluctuations in light emission output and Vf and chemical solution from contacting the light-emitting layer, and as a result, a high-intensity light-emitting element that can reduce the problem of being destroyed and not being lit.
  • the side surfaces of the first and second window layers are roughened. With such a light emitting element, the luminance becomes higher and the present invention is particularly effective.
  • the side surface of the quaternary light emitting layer is recessed inwardly within a range of 2 ⁇ m or less than the side surfaces of the first and second window layers.
  • the quaternary light emitting layer may be made of AlGaInP, and the first and second window layers may be made of GaP. Such a light emitting device is of high quality.
  • the step of forming the first window layer on one main surface side of the quaternary light emitting layer, and the formation of the second window layer on the other main surface side of the quaternary light emitting layer comprising: forming a side surface of the quaternary light-emitting layer so as to be recessed inside the light-emitting element from the side surfaces of the first and second window layers.
  • a method for manufacturing a light emitting device is provided.
  • the side surface of the quaternary light emitting layer can be formed to be recessed inwardly within a range of 2 ⁇ m or less from the side surfaces of the first and second window layers. If it does in this way, when sealing with resin at the time of light-emitting device manufacture, the light emitting element which can reduce the malfunction of the sealing by a recessed part can be manufactured.
  • AlGaInP can be used for the quaternary light emitting layer, and GaP can be used for the first and second window layers. In this way, a high quality light emitting device can be manufactured.
  • the side surface of the quaternary light emitting layer is brought into the inner side. It can be formed to be recessed. In this way, the concave portion on the side surface of the quaternary light emitting layer can be easily formed at low cost.
  • the side surface of the quaternary light emitting layer is formed so as to be recessed inside the light emitting element from the side surfaces of the first and second window layers, the light emission output and the variation in Vf and the chemical solution contact the light emitting layer. As a result, it is possible to obtain a high-luminance light-emitting element that can reduce a problem that the lamp is broken and becomes unlit.
  • FIG. 3 is a diagram schematically illustrating a light emitting device substrate from which a GaAs substrate and a GaAs buffer layer are removed in the manufacturing process of the method for manufacturing a light emitting device of the present invention. It is the figure which showed the outline of the light emitting element substrate in which the GaP transparent substrate layer was formed in the manufacture process of the manufacturing method of the light emitting element of this invention.
  • the light-emitting element 10 of the present invention includes a second window layer 21, an n-type connection layer 13, a quaternary light-emitting layer 17, a p-type connection layer 18, and a first window layer 19. Yes.
  • the first window layer 19 is formed on the main surface side above the quaternary light emitting layer 17 via the p-type connection layer 18, and the second window layer 21 is on the main surface side below the quaternary light emitting layer 17.
  • the quaternary light emitting layer 17 includes an n-type cladding layer 14, an active layer 15, and a p-type cladding layer 16.
  • Each layer of the quaternary light emitting layer 17 can be made of, for example, AlGaInP, and the first window layer 19, the second window layer 21, the n-type connection layer 13, and the p-type connection layer 18 are made of, for example, GaP. It can be made up of.
  • the electrode 24 is formed on the main surface above the first window layer 19 so as to cover the bonding alloyed layer 24a, and the bonding wire 28 is connected to the electrode 24.
  • An electrode 25 is formed on the main surface below the second window layer 21 so as to cover the bonding alloyed layer 25a.
  • the light emitting device 10 of the present invention is a light emitting device with extremely high brightness because light emitted from the quaternary light emitting layer 17 is extracted from the upper and lower window layers 19 and 21.
  • the side surfaces of the first window layer 19 and the second window layer 21 and the exposed main surface can be roughened as shown in FIG. This roughening can be performed, for example, by etching as described later.
  • the side surface of the quaternary light-emitting layer 17 is recessed inside the light-emitting element from both side surfaces of the first window layer 19 and the second window layer 21. That is, when both side surfaces of the first window layer 19 and the second window layer 21 are defined as reference surfaces, both side surfaces of the quaternary light emitting layer 17 are recessed inward from the corresponding reference surfaces.
  • both side surfaces of the first window layer 19 and the second window layer 21 are defined as reference surfaces
  • both side surfaces of the quaternary light emitting layer 17 are recessed inward from the corresponding reference surfaces.
  • the amount by which the quaternary light-emitting layer 17 is recessed is not particularly limited, but can be, for example, in a range of 2 ⁇ m or less from the side surfaces of the first and second window layers. By making it within this range, when manufacturing the light emitting device by sealing the light emitting element of the present invention with a resin, it is possible to reduce sealing defects such as a resin unfilled portion in the recess.
  • the lower limit of the dent amount can be set to 1 ⁇ m, for example. If the dent amount is at least 1 ⁇ m, the destruction of the quaternary light emitting layer 17 can be surely reduced.
  • an n-type GaAs single crystal substrate 11 is prepared as a growth substrate (step 1 in FIG. 2). Thereafter, as shown in FIG. 3, an n-type GaAs buffer layer 12 is epitaxially grown to a thickness of, for example, 0.5 ⁇ m on the main surface of the n-type GaAs single crystal substrate 11 (step 2 in FIG. 2). An n-type connection layer 13 is epitaxially grown on the buffer layer 12.
  • the quaternary light-emitting layer 17 is made of n-type cladding layer 14 and active layer 15 each made of (Al x Ga 1-x ) y In 1-y P (where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1).
  • the p-type cladding layer 16 is formed (step 2 in FIG. 2). Specifically, first, for example, an n-type cladding layer 14 having a thickness of 1 ⁇ m (the n-type dopant is Si) is epitaxially grown as a first conductivity type cladding layer.
  • an active layer 15 (non-doped) having a thickness of 0.6 ⁇ m is epitaxially grown, and then, for example, a p-type cladding layer 16 having a thickness of 1 ⁇ m (p-type dopant is Mg: C from an organometallic molecule is also used as a p-type dopant).
  • the second conductivity type cladding layer is epitaxially grown in this order.
  • each dopant concentration of the p-type cladding layer 16 and the n-type cladding layer 14 can be set to, for example, 1 ⁇ 10 17 / cm 3 or more and 2 ⁇ 10 18 / cm 3 or less.
  • the quaternary light emitting layer 17 has a double hetero structure in which an AlGaInP active layer is sandwiched between an n-type AlGaInP clad layer and a p-type AlGaInP clad layer having a larger band gap, for example,
  • a high-luminance element can be realized in a wide wavelength range from green to red.
  • the p-type connection layer 18 is epitaxially grown on the p-type cladding layer 16 (step 3 in FIG. 2).
  • the epitaxial growth of each of the above layers can be performed by a known MOVPE method.
  • the following can be used as the source gas that becomes the source of each component of Al, Ga, In, and P.
  • Al source gas trimethylaluminum (TMAl), triethylaluminum (TEAl), etc.
  • Ga source gas trimethylgallium (TMGa), triethylgallium (TEGa), etc.
  • P source gas trimethyl phosphorus (TMP), triethyl phosphorus (TEP), phosphine (PH 3 ) and the like.
  • the first window layer 19 made of p-type GaP is vapor-phase grown by HVPE as a light extraction layer (step 4 in FIG. 2).
  • the thickness of the first window layer 19 to be vapor grown is set to 10 ⁇ m or more.
  • the group III element Ga is heated and held at a predetermined temperature in the container, and hydrogen chloride is introduced onto the Ga to obtain the following formula (1): GaCl is generated by the above reaction, and is supplied onto the substrate together with H 2 gas which is a carrier gas.
  • H 2 gas which is a carrier gas.
  • the temperature in the container is set to, for example, 640 ° C. or more and 860 ° C. or less.
  • GaCl is excellent in reactivity with PH 3, and the window layer can be efficiently grown by the reaction of the following formula (2).
  • the light emitting element substrate 20 shown in FIG. 3 is obtained through the above steps.
  • the n-type GaAs substrate 11 and the n-type GaAs buffer layer 12 are chemically treated using an etching solution such as a mixed solution of ammonia and hydrogen peroxide. It removes by etching (process 5 of FIG. 2).
  • an etching solution such as a mixed solution of ammonia and hydrogen peroxide. It removes by etching (process 5 of FIG. 2).
  • a separately prepared n-type GaP single crystal substrate is bonded to form a second window layer 21 to form a light emitting element substrate 20 ′ (step 6 in FIG. 2).
  • the second window layer 21 can also be formed by epitaxial growth by the HVPE method.
  • the main surface above the first window layer 19 (the surface on the side opposite to the p-type connection layer 18) and the second are formed by sputtering or vacuum evaporation.
  • a metal layer for forming a bonded alloying layer is formed on the main surface below the window layer 21 (the surface opposite to the n-type connecting layer 13), and further heat treatment for alloying (so-called sintering treatment) is performed.
  • the bonded alloyed layers 24a and 25a are obtained.
  • the electrode 24 and the electrode 25 are formed so that these joining alloying layers may be covered, respectively (process 7 of FIG. 2).
  • the composition of the roughening etching solution can be a known composition comprising acetic acid, hydrofluoric acid, nitric acid, iodine, and water.
  • composition ratios are acetic acid (CH 3 COOH conversion): 37.4 mass% to 94.8 mass%, hydrofluoric acid (HF conversion): 0.4 mass% to 14.8 mass%, nitric acid (HNO 3 conversion): 1.3 mass% or more and 14.7 mass% or less, iodine (I2 conversion): contained in the range of 0.12 mass% or more and 0.84 mass% or less, and the water content is 2. It can be 4 mass% or more and 45 mass% or less.
  • Step 9 in FIG. 2 the reason why the dicing direction is the ⁇ 100> direction is that cracks and chips along the edge of the chip region are less likely to occur.
  • a processing damage layer having a relatively high crystal defect density is formed on the side surface exposed by dicing.
  • a sulfuric acid-hydrogen peroxide aqueous solution can be used, and for example, the mass blending ratio of sulfuric acid: hydrogen peroxide: water can be 3: 1: 1.
  • the liquid temperature is adjusted to 40 ° C. or higher and 60 ° C. or lower, and etching for about 6 minutes may be required.
  • the first and second window layers can be roughened on the side surface of the light-emitting element chip from which the processing damage layer has been removed, and the quaternary light-emitting layer 17 is placed on the inner side from the side surfaces of the first and second window layers.
  • the side surfaces of the first window layer 19 (the main surface may also be roughened at this time) and the side surfaces of the second window layer 21 are made different by contacting an etching solution that can be both recessed.
  • the side surface of the quaternary light-emitting layer 17 is etched and concaved simultaneously with isotropic etching to roughen the surface (step 11 in FIG. 2).
  • the composition of the etching solution used at this time about 10% by mass of hydrochloric acid can be added to the above-mentioned roughening etching solution composed of a mixture of acetic acid, hydrofluoric acid, nitric acid, iodine and water.
  • iodine, acetic acid, hydrofluoric acid, and nitric acid contribute to the roughening of the side and main surfaces of the GaP window layers 19 and 21, and hydrochloric acid contributes to the etching of the quaternary light emitting layer 17 made of AlGaInP.
  • the amount of indentation of the quaternary light emitting layer 17 is not particularly limited as described above.
  • the amount can be within a range of 2 ⁇ m or less from the side surfaces of the first and second window layers. . Since this dent amount has a linear relationship with the etching time, the dent amount can be adjusted by the etching time.
  • step 11 the roughening of the window layer and the etching of the quaternary light emitting layer can be performed simultaneously.
  • the roughening of the window layer and the etching of the quaternary light emitting layer are performed separately. You can also.
  • quaternary emission is performed with an etching solution composed of 34.8% by mass of acetic acid, 58.8% by mass of sulfuric acid, 0.7% by mass of hydrochloric acid, 0.6% by mass of hydrogen peroxide, and 5.2% by mass of water.
  • etching solution composed of 34.8% by mass of acetic acid, 58.8% by mass of sulfuric acid, 0.7% by mass of hydrochloric acid, 0.6% by mass of hydrogen peroxide, and 5.2% by mass of water.
  • a known roughening etchant comprising iodine, acetic acid, hydrofluoric acid, nitric acid, and water.
  • Each light emitting element chip that has been subjected to the surface roughening treatment as described above is bonded to the metal stage via the Ag paste layer on the lower main surface side, and the bonding wire 28 is connected to the light extraction side electrode 24. If a mold part (not shown) made of epoxy resin is formed, a final light emitting element is completed.
  • a light emitting device having a quaternary light emitting layer recessed inward was prepared.
  • the window layer was roughened using an etching solution comprising 71.7% by mass of acetic acid, 5% by mass of hydrofluoric acid, 5% by mass of nitric acid, 0.3% by mass of iodine, 8% by mass of water, and 10% by mass of hydrochloric acid. Planarization and etching of the quaternary light emitting layer were performed. At this time, etching was performed while changing the etching time, and the amount of dents was evaluated.
  • the light emitting device was manufactured by adjusting the etching time, and 50 light emitting devices each having a dent amount of 1.0 ⁇ m and 1.5 ⁇ m were prepared.
  • the side surface of the quaternary light emitting layer is formed by performing etching without adding hydrochloric acid to the roughening treatment of the window layer. Fifty light emitting elements that protrude 1.0 ⁇ m outside the side surface of the window layer and 50 light emitting elements that protrude 1.5 ⁇ m outside were prepared.
  • the 50 light-emitting elements prepared in the above example, comparative example 1 and comparative example 2 were each mounted on a bullet-type lamp having a diameter of 5 mm, and after initial measurement, an environmental exposure test was performed. In order to sufficiently permeate the flux and moisture, it was immersed in the flux for 1 hour, and then a reflow test was performed. After the reflow test, a temperature cycle test of ⁇ 50 ° C. to 80 ° C. was performed for 48 hours, and the ratio of the lamp whose luminance and Vf fluctuated by 10% or more was evaluated. Thereafter, an energization test was conducted at 20 mA for 100 hours.
  • Table 1 summarizes the number of lamps that were not lit after the energization test and the number of lamps that did not turn off but had luminance and Vf characteristics varying by 10% or more.
  • “+” means a bulge
  • “ ⁇ ” means a dent.
  • the ratio of non-lighting was the highest in the light emitting element of Comparative Example 1, and four of the light emitting elements with protruding amounts of 1.0 ⁇ m and 1.5 ⁇ m were unlighted. On the other hand, two of the light emitting elements of Comparative Example 2 were unlit.
  • the cause of the non-lighting is that when the quaternary light emitting layer is not recessed inward, the chemical solution that has entered the lamp contacts the quaternary light emitting layer and the contact portion becomes a cavity, so that the chemical solution is more likely to accumulate. This is considered to be because the reaction proceeds at an accelerated rate.
  • the ratio of the lamp in which the characteristic has changed exceeds 40% regardless of the protruding amount. This is presumably because when the light emitting layer protrudes to the outside, the contact with the resin is improved, so that stress transmission to the light emitting layer due to thermal contraction of the resin that occurs when a temperature cycle is applied is promoted.
  • the ratio of the lamp whose characteristics were changed was suppressed to 2% or less regardless of the dent amount.
  • the light-emitting element of the present invention can also suppress changes in luminance and Vf due to temperature changes.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

　La présente invention concerne un élément électroluminescent comportant une couche électroluminescente quaternaire, une première couche de fenêtre formée sur un côté surface principale de la couche électroluminescente quaternaire, et une seconde couche de fenêtre formée sur l'autre côté surface principale de la couche électroluminescente quaternaire, l'élément électroluminescent étant caractérisé en ce que les surfaces latérales de la couche électroluminescente quaternaire sont davantage renfoncées vers l'intérieur de l'élément électroluminescent que ne le sont les surfaces latérales des première et seconde couches de fenêtre. Cela permet d'obtenir et de fabriquer un élément électroluminescent hautement lumineux dans lequel il est possible de réduire des défauts entraînant la rupture et le non-allumage de l'élément et de supprimer des variations de sortie d'émission de lumière et de Vf.
PCT/JP2014/002574 2013-06-26 2014-05-16 Élément électroluminescent et procédé de fabrication d'élément électroluminescent WO2014207987A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201480033929.2A CN105283970B (zh) 2013-06-26 2014-05-16 发光元件及发光元件的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013134171A JP6131737B2 (ja) 2013-06-26 2013-06-26 発光素子及び発光素子の製造方法
JP2013-134171 2013-06-26

Publications (1)

Publication Number Publication Date
WO2014207987A1 true WO2014207987A1 (fr) 2014-12-31

Family

ID=52141363

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/002574 WO2014207987A1 (fr) 2013-06-26 2014-05-16 Élément électroluminescent et procédé de fabrication d'élément électroluminescent

Country Status (4)

Country Link
JP (1) JP6131737B2 (fr)
CN (1) CN105283970B (fr)
TW (1) TWI568025B (fr)
WO (1) WO2014207987A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0851233A (ja) * 1994-08-08 1996-02-20 Showa Denko Kk 発光ダイオード
JPH08213649A (ja) * 1995-02-01 1996-08-20 Sanken Electric Co Ltd 半導体発光素子
JP2000299494A (ja) * 1999-04-15 2000-10-24 Rohm Co Ltd 半導体発光素子の製法
JP2010258039A (ja) * 2009-04-21 2010-11-11 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
JP2012253226A (ja) * 2011-06-03 2012-12-20 Hayashi Junyaku Kogyo Kk エッチング液組成物およびエッチング方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101241957A (zh) * 2007-02-08 2008-08-13 大连路美芯片科技有限公司 四元发光二极管制造方法
CN101859855A (zh) * 2010-05-14 2010-10-13 厦门市三安光电科技有限公司 具有表面双层粗化的四元系垂直发光二极管及其制备方法
CN103682003A (zh) * 2012-08-31 2014-03-26 山东华光光电子有限公司 一种湿法加工窗口层侧壁倾斜的AlGaInP四元LED芯片

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0851233A (ja) * 1994-08-08 1996-02-20 Showa Denko Kk 発光ダイオード
JPH08213649A (ja) * 1995-02-01 1996-08-20 Sanken Electric Co Ltd 半導体発光素子
JP2000299494A (ja) * 1999-04-15 2000-10-24 Rohm Co Ltd 半導体発光素子の製法
JP2010258039A (ja) * 2009-04-21 2010-11-11 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
JP2012253226A (ja) * 2011-06-03 2012-12-20 Hayashi Junyaku Kogyo Kk エッチング液組成物およびエッチング方法

Also Published As

Publication number Publication date
TW201511335A (zh) 2015-03-16
CN105283970B (zh) 2018-06-19
CN105283970A (zh) 2016-01-27
JP2015012028A (ja) 2015-01-19
TWI568025B (zh) 2017-01-21
JP6131737B2 (ja) 2017-05-24

Similar Documents

Publication Publication Date Title
TWI405350B (zh) Light emitting element and manufacturing method thereof
EP2006921B1 (fr) Procédé de fabrication d'une diode électroluminescente à base de GaN
KR100668351B1 (ko) 질화물계 발광소자 및 그 제조방법
US7687376B2 (en) Method of manufacturing vertical gallium nitride-based light emitting diode
US20090275154A1 (en) Method of fabricating light emitting device
CN102569541B (zh) 半导体发光芯片制造方法
EP2985793A1 (fr) Élément électroluminescent à semi-conducteurs et procédé de fabrication associé
JP2007324551A (ja) 発光素子及びその製造方法
US8309381B2 (en) Group III nitride semiconductor light-emitting device and production method therefor
JP5287467B2 (ja) 発光素子の製造方法
JP4341623B2 (ja) 発光素子及びその製造方法
JP6131737B2 (ja) 発光素子及び発光素子の製造方法
JP2010199344A (ja) 発光素子の製造方法
JPWO2009017017A1 (ja) 高輝度発光ダイオ−ド及びその製造方法
JP5251185B2 (ja) 化合物半導体基板及びそれを用いた発光素子並びに化合物半導体基板の製造方法
JP2004260109A (ja) 発光素子の製造方法、複合透光性基板及び発光素子
JP6008661B2 (ja) ＧａＮ系結晶及び半導体素子の製造方法
TWI596797B (zh) Gallium nitride-based crystal and semiconductor device manufacturing method, and light-emitting Device and method of manufacturing the light-emitting device
JP2894779B2 (ja) 半導体発光素子およびその製造方法
JP5338748B2 (ja) 化合物半導体基板の製造方法及び化合物半導体基板
JP2008227539A (ja) 発光素子の製造方法
JP2005150646A (ja) 発光素子及びその製造方法
JP2011100835A (ja) 発光素子の製造方法
JP2007184645A (ja) 半導体発光素子の製法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201480033929.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14817609

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14817609

Country of ref document: EP

Kind code of ref document: A1