TWI568025B - And a method of manufacturing the light-emitting element and the light-emitting element - Google Patents
And a method of manufacturing the light-emitting element and the light-emitting element Download PDFInfo
- Publication number
- TWI568025B TWI568025B TW103121069A TW103121069A TWI568025B TW I568025 B TWI568025 B TW I568025B TW 103121069 A TW103121069 A TW 103121069A TW 103121069 A TW103121069 A TW 103121069A TW I568025 B TWI568025 B TW I568025B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- layer
- emitting
- window layer
- emitting element
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000005530 etching Methods 0.000 claims description 35
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 30
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- 238000007788 roughening Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 208
- 239000000758 substrate Substances 0.000 description 25
- 239000007788 liquid Substances 0.000 description 21
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 229910005540 GaP Inorganic materials 0.000 description 13
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 238000005253 cladding Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910001868 water Inorganic materials 0.000 description 8
- 238000005275 alloying Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- XZGYRWKRPFKPFA-UHFFFAOYSA-N methylindium Chemical compound [In]C XZGYRWKRPFKPFA-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- -1 that is Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013134171A JP6131737B2 (ja) | 2013-06-26 | 2013-06-26 | 発光素子及び発光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201511335A TW201511335A (zh) | 2015-03-16 |
| TWI568025B true TWI568025B (zh) | 2017-01-21 |
Family
ID=52141363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103121069A TWI568025B (zh) | 2013-06-26 | 2014-06-18 | And a method of manufacturing the light-emitting element and the light-emitting element |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6131737B2 (fr) |
| CN (1) | CN105283970B (fr) |
| TW (1) | TWI568025B (fr) |
| WO (1) | WO2014207987A1 (fr) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010258039A (ja) * | 2009-04-21 | 2010-11-11 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法及び発光素子 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3470401B2 (ja) * | 1994-08-08 | 2003-11-25 | 昭和電工株式会社 | 発光ダイオード |
| JPH08213649A (ja) * | 1995-02-01 | 1996-08-20 | Sanken Electric Co Ltd | 半導体発光素子 |
| JP3881472B2 (ja) * | 1999-04-15 | 2007-02-14 | ローム株式会社 | 半導体発光素子の製法 |
| CN101241957A (zh) * | 2007-02-08 | 2008-08-13 | 大连路美芯片科技有限公司 | 四元发光二极管制造方法 |
| CN101859855A (zh) * | 2010-05-14 | 2010-10-13 | 厦门市三安光电科技有限公司 | 具有表面双层粗化的四元系垂直发光二极管及其制备方法 |
| JP5921091B2 (ja) * | 2011-06-03 | 2016-05-24 | 林純薬工業株式会社 | エッチング液組成物およびエッチング方法 |
| CN103682003A (zh) * | 2012-08-31 | 2014-03-26 | 山东华光光电子有限公司 | 一种湿法加工窗口层侧壁倾斜的AlGaInP四元LED芯片 |
-
2013
- 2013-06-26 JP JP2013134171A patent/JP6131737B2/ja active Active
-
2014
- 2014-05-16 WO PCT/JP2014/002574 patent/WO2014207987A1/fr active Application Filing
- 2014-05-16 CN CN201480033929.2A patent/CN105283970B/zh active Active
- 2014-06-18 TW TW103121069A patent/TWI568025B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010258039A (ja) * | 2009-04-21 | 2010-11-11 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法及び発光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201511335A (zh) | 2015-03-16 |
| CN105283970B (zh) | 2018-06-19 |
| CN105283970A (zh) | 2016-01-27 |
| JP2015012028A (ja) | 2015-01-19 |
| JP6131737B2 (ja) | 2017-05-24 |
| WO2014207987A1 (fr) | 2014-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI405350B (zh) | Light emitting element and manufacturing method thereof | |
| US8252662B1 (en) | Method and structure for manufacture of light emitting diode devices using bulk GaN | |
| Wang et al. | Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates | |
| JP2007088351A (ja) | 発光ダイオード用エピタキシャルウェハおよび発光ダイオード | |
| CN102569541B (zh) | 半导体发光芯片制造方法 | |
| KR101510377B1 (ko) | 질화물 반도체 및 수직형 발광 소자의 제조방법 | |
| TW201448265A (zh) | 半導體發光元件及其製造方法 | |
| JP2005019424A (ja) | 発光素子及び発光素子の製造方法 | |
| CN109888069B (zh) | InGaN/GaN量子阱结构及LED外延片制备方法 | |
| JP5287467B2 (ja) | 発光素子の製造方法 | |
| TWI568025B (zh) | And a method of manufacturing the light-emitting element and the light-emitting element | |
| TWI389338B (zh) | A light-emitting element manufacturing method, a compound semiconductor wafer, and a light-emitting element | |
| JP4341623B2 (ja) | 発光素子及びその製造方法 | |
| JPWO2009017017A1 (ja) | 高輝度発光ダイオ−ド及びその製造方法 | |
| JP2010199344A (ja) | 発光素子の製造方法 | |
| TWI446574B (zh) | A compound semiconductor substrate, a light-emitting element using the same, and a method for producing a compound semiconductor substrate | |
| TWI404231B (zh) | 高亮度發光二極體及其製造方法 | |
| JP4061497B2 (ja) | 発光素子の製造方法 | |
| JP2004260109A (ja) | 発光素子の製造方法、複合透光性基板及び発光素子 | |
| TWI411126B (zh) | A method for manufacturing a high luminance light emitting diode, a light emitting element substrate, and a high luminance light emitting diode | |
| KR100730755B1 (ko) | 수직형 발광소자 제조 방법 및 그 수직형 발광소자 | |
| JP2005079152A (ja) | 半導体発光素子及びその製造方法 | |
| KR20130024482A (ko) | 수직형 발광 다이오드용 기판 | |
| KR101198760B1 (ko) | 수직형 발광 소자 및 그 제조방법 | |
| TWI455358B (zh) | 半導體發光晶片製造方法 |