WO2014206775A1 - Verfahren zum bearbeiten eines elektronischen bauelements und elektronische bauelementeanordnung - Google Patents
Verfahren zum bearbeiten eines elektronischen bauelements und elektronische bauelementeanordnung Download PDFInfo
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- WO2014206775A1 WO2014206775A1 PCT/EP2014/062449 EP2014062449W WO2014206775A1 WO 2014206775 A1 WO2014206775 A1 WO 2014206775A1 EP 2014062449 W EP2014062449 W EP 2014062449W WO 2014206775 A1 WO2014206775 A1 WO 2014206775A1
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- FWXNJWAXBVMBGL-UHFFFAOYSA-N 9-n,9-n,10-n,10-n-tetrakis(4-methylphenyl)anthracene-9,10-diamine Chemical compound C1=CC(C)=CC=C1N(C=1C2=CC=CC=C2C(N(C=2C=CC(C)=CC=2)C=2C=CC(C)=CC=2)=C2C=CC=CC2=1)C1=CC=C(C)C=C1 FWXNJWAXBVMBGL-UHFFFAOYSA-N 0.000 description 1
- RJMORVKVIQBMAP-UHFFFAOYSA-N C1(=CC=CC2=CC=CC=C12)C1C(C=CC(=C1)NC1=CC=CC=C1)(C1=CC=C(N)C=C1)C1=CC=CC=C1 Chemical compound C1(=CC=CC2=CC=CC=C12)C1C(C=CC(=C1)NC1=CC=CC=C1)(C1=CC=C(N)C=C1)C1=CC=CC=C1 RJMORVKVIQBMAP-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 102000003978 Tissue Plasminogen Activator Human genes 0.000 description 1
- 108090000373 Tissue Plasminogen Activator Proteins 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical class C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical class O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- FJAOBQORBYMRNO-UHFFFAOYSA-N f16cupc Chemical compound [Cu+2].[N-]1C(N=C2C3=C(F)C(F)=C(F)C(F)=C3C(N=C3C4=C(F)C(F)=C(F)C(F)=C4C(=N4)[N-]3)=N2)=C(C(F)=C(F)C(F)=C2F)C2=C1N=C1C2=C(F)C(F)=C(F)C(F)=C2C4=N1 FJAOBQORBYMRNO-UHFFFAOYSA-N 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002503 iridium Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 239000006072 paste Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003366 poly(p-phenylene terephthalamide) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- BPEVHDGLPIIAGH-UHFFFAOYSA-N ruthenium(3+) Chemical compound [Ru+3] BPEVHDGLPIIAGH-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- RFDGVZHLJCKEPT-UHFFFAOYSA-N tris(2,4,6-trimethyl-3-pyridin-3-ylphenyl)borane Chemical class CC1=C(B(C=2C(=C(C=3C=NC=CC=3)C(C)=CC=2C)C)C=2C(=C(C=3C=NC=CC=3)C(C)=CC=2C)C)C(C)=CC(C)=C1C1=CC=CN=C1 RFDGVZHLJCKEPT-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/851—Division of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- a method for processing an electronic device and a
- organic light emitting diode find more widespread use in general lighting.
- An organic optoelectronic component for example an OLED, conventionally has on a carrier an anode and a cathode with a
- the organic functional layer system in between.
- the organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures of each two or more charge carrier pair generation layers
- Charge carrier pair generation and one or more
- Electron block layers also referred to as
- Hole transport layer and one or more hole block layers, also referred to as electron transport layer (s) (ETL), for directing current flow.
- Conventional carriers of organic light-emitting diodes are
- Supports for OLEDs can be made in a conventional manner by means of a Scribing and crushing system (Scribe & Break) are separated from the plate level to individual components, in that by means of a "scribing wheel" with a certain force at corresponding breaking or separating edges or
- a conventional method for separating does not work anymore with a hybrid OLED, since it is not possible at the same time to separate glass and plastic foils or metal foils by means of a scoring wheel.
- Metal foils which are to be applied to the OLED, before laminating on the OLED individual components and - form rightly cut and then glued to the respective positions of the carrier individually on the OLEDs / laminated, Such a process is carried out sequentially and is as
- a method for processing an electronic device and a
- a method of processing an electronic device comprising: applying a planar structure provided with desired separation points to the device
- Structure having a film or be, for example, a metal foil, a plastic film or a thin glass.
- Structure be formed such that it has one of the following effects: heat conduction; Scattering, Reflecting, Filtering and / or Absorbing Electromagnetic
- the electronic component can be fixed in a conclusive manner by means of the planar structure on a surface.
- a conclusive connection and a conclusive fixing is understood to form a coherent connection, that is, a cohesive, positive and / or
- Connecting means is the means or medium by means of which a coherent connection between a first body and a second body is formed, for example an adhesive or a clamp.
- the electronic component may have an optoelectronic component.
- Optoelectronic component having an organic light emitting diode.
- Optoelectronic component having a solar cell and / or a photodetector.
- the electronic component may have two or more electronic component units, wherein the planar structure is applied to or over the two or more electronic component units.
- At least one target separating point can be formed between two electronic component units.
- the electronic component may have an electrical contact region, wherein the removed part of the applied planar structure is removed from the electrical contact region.
- the removal may further include peeling off the part to be removed
- the part to be removed can
- the electronic component may be formed on a carrier, wherein a planar structure is applied to or over the electronic component and / or wherein a planar structure is applied on or above the side of the carrier, which faces away from the electronic component ,
- the application of the planar structure can be a material-locking connection of the
- cohesive connection are formed by means of: a double-sided adhesive tape; a liquid adhesive; a UV-curable adhesive and / or a pressure-sensitive adhesive.
- the planar structure can be laminated onto the electronic component
- the means for forming the material connection can be structured on or above the electronic component and / or the
- the area between the part of the planar structure to be removed and the electronic component can remain free from a conclusive connection means.
- the means for forming the integral connection between the zu removing part of the sheet structure and the electronic component have a lower adhesion and / or cohesion than in the area between the non-removable planar structure and the electronic
- the support and the planar structure may differ in at least one of the following properties: the chemical resistance to an acid, a base or a
- Solvent the mechanical deformation resistance with respect to a singulation process.
- a separation of the electronic component with a planar structure can by means of a physical process, such as a water jet cutting, or plasma cutting, - a
- the carrier can be separated by one of the methods mentioned, wherein the planar structure for this method in the area without a target separation point
- the desired separation point and the planar structure may differ in at least one of the following properties:
- the carrier and the planar structure may be a different material
- the carrier and the planar structure may have the same material but be of different design. By means of different manufacturing processes can materially same
- Structures in physical properties differ, for example, a different density or
- an electronic component assembly is provided that is electronic
- Component assembly comprising: an electronic
- planar structure Component on a support; and a planar structure, wherein the planar structure, a planar structure on the support and / or a planar structure on the electronic component, and wherein the planar structure has predetermined separation points, wherein the planar structure is formed such that a part of the flat structure is removable after a separation of the desired separation points of the electronic component assembly.
- the planar structure may be flexible, for example, mechanically flexible, for example, reversibly bendable.
- the planar structure may comprise or be a foil.
- the planar structure may be formed such that it has one of the following effects: heat conduction; Scattering, reflecting, filtering and / or absorbing electromagnetic radiation;
- Damage component such as protection against water, oxygen, UV radiation; Decoupling or coupling of electromagnetic radiation from / into the electronic
- Component Change the visual appearance of the electronic component, for example as
- the target separation point and the planar structure may differ in at least one of the following properties: the chemical resistance with respect to an acid, a base or a
- the means for forming the integral connection between the part of the planar structure to be removed and the electronic component may have a lower adhesion and / or cohesion than in the region between the non-removable planar structure and the electronic component.
- the sheet structure may have a thickness in a range of about 10 ⁇ to about 500 ⁇ .
- the electronic component may have an optoelectronic component.
- the optoelectronic component can have an organic light-emitting diode.
- the optoelectronic component can / have a solar cell and / or a photodetector.
- the electronic component may have two or more electronic component units, wherein the planar structure is formed on or above the two or more electronic component units.
- At least one desired separation point between two electronic component units is
- Component units is formed.
- Separating the desired separation points can already be the resistance of the electronic component with respect to the separation of the electronic component units in the area of the separated target separation point to be reduced, for example by the planar structure when separating the
- electronic component units may be formed between the two electronic component units, a region which is free after removal of the part of the sheet-like structure between these desired separation points of planar structure. This can be a singling of the
- Device units in this area can be simplified and / or facilitated.
- the electronic component may have an electrical contact region, wherein the removable part of the applied planar structure is formed over the electrical contact region.
- the planar structure may be formed such that the removable part of the planar
- Structure is formed removable to a piece.
- the planar structure is formed removable to a piece.
- the planar structure is formed removable to a piece.
- the cohesive connection can be formed by means of: a double-sided adhesive tape; a liquid adhesive of a UV-curable adhesive and / or a pressure-sensitive adhesive.
- planar structure may be laminated onto the electronic component.
- the means for forming the cohesive connection can be structured on or above the electronic component and / or the planar structure.
- the support and the sheet structure may differ in at least one of the following properties: chemical resistance to acid, base or solvent, mechanical resistance to deformation
- the carrier and the planar structure may have a different material. In one embodiment, the carrier and the planar structure may have the same material but be designed differently. Embodiments of the invention are illustrated in the figures and are explained in more detail below.
- FIG. 1 shows a schematic cross-sectional view of an electronic component arrangement with a planar structure according to various
- Figure 2 is a diagram of a method for processing an electronic component assembly
- FIGS 3A-F are schematic representations of optoelectronic
- FIGS 4A-C are schematic representations of optoelectronic
- FIGS 5A-F are schematic representations of optoelectronic
- a target separation point is a region of a structure that has a lower resistance with respect to a
- Separation method has as at least the areas of the structure adjacent to the desired separation point.
- Design of the desired separation point may be dependent on the method used for separating the target separation point.
- the target separation point may have a lower mechanical resistance than the regions of the structure adjoining the desired separation point.
- the desired separation point may be structured, for example having a recess, cavities or perforations. This can reduce the amount of material that is removable in the desired separation point, thereby reducing mechanical resistance.
- the desired separation point may have a higher solubility than the regions of the structure adjacent to the desired separation point. A higher chemical solubility can be formed by forming the target separation point from a different material and / or another method such that the
- Target release parts have a higher solubility in terms of a solvent, an acid or a base.
- the desired separation point may be structured, for example having recesses, cavities or perforations. This can reduce the amount of material that is removable in the desired separation point.
- connection of a first body with a second body may be positive, non-positive and / or cohesive.
- the connections may be detachable, i. reversible.
- a reversible, interlocking connection can be realized, for example, as a screw connection, a clamp, a catch connection and / or by means of clamps and / or holding pins.
- the connections can not be detachable, i. irreversible.
- a non-detachable connection can only by destroying the
- Lanyard to be separated. may be an irreversible, interlocking connection, for example, realized as a riveted joint, an adhesive bond or a solder joint.
- a cohesive connection the first body may be connected to the second body by means of atomic and / or molecular forces.
- Cohesive compounds can often be non-releasable compounds.
- a substance-consistent connection
- the cohesive connection can be, for example, an electrically conductive adhesive bond (anisotropic conductive film bonding - ACF bonding).
- the cohesive connection can be effected by means of a friction welding process (ultrasonic bonding - US bonding), hardening with UV radiation or drying of a liquid cohesive bonding agent.
- a friction welding process ultrasonic bonding - US bonding
- the first barrier layer 104 is formed such that it is made of substances that the optoelectronic component
- the barrier layer may be formed as a single layer, a layer stack or a layer structure.
- the barrier layer has a plurality of partial layers formed on one another.
- the barrier layer has a plurality of sub-layers formed on one another, wherein the
- Sublayers can be laterally structured.
- 1 shows a schematic cross-sectional view of an electronic component arrangement with a planar structure according to various exemplary embodiments.
- An optoelectronic component may include a hermetically sealed substrate, an electrically active region 106 and a
- the hermetically sealed substrate may iron the carrier 102 and a first barrier layer 104.
- the electrically active region 106 may be a first
- Electrode 110 an organic functional layered structure
- the organic functional layer structure 112 may include a first organic functional layer structure unit 116, an intermediate layer 118, and a second organic layer structure
- the encapsulation structure may include a second barrier layer 108, an adhesive layer 122, and a cover 124
- the optoelectronic component 130 can absorb and / or provide electromagnetic radiation
- the optoelectronic component 130 may be formed as an organic light emitting diode 130, an organic photodetector 130 or an organic solar cell.
- An organic light emitting diode 130 may be referred to as a so-called
- a top emitter and / or bottom emitter may also be optically transparent or optically translucent.
- the carrier 102 may be glass, quartz, and / or a
- the carrier may comprise or be formed from a plastic film or a laminate with one or more plastic films.
- the plastic may contain one or more polyolefins
- the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),
- the carrier 102 may comprise or be formed of a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel.
- the carrier 102 may be translucent or even transparent.
- the carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way.
- the carrier 102 may be referred to as
- the first barrier layer 104 may comprise or be formed from one of the following materials:
- Indium zinc oxide aluminum-doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof.
- the first. Barrier layer 104 may by means of one of
- Atomic layer deposition method Atomic La er deposition (ALD)
- ALD Atomic layer deposition
- PALD Physical Light Deposition
- PECVD Plasma Enhanced Chemical Vapor Deposition
- a first barrier layer 104 the more
- Sublayers all sublayers can be formed by means of a Atom fürabscheide Kunststoffs.
- a layer sequence that has only ALD layers can also al
- Nanolaminate be referred to.
- Partial layers may have one or more
- Atomic layer deposition processes are deposited
- the first barrier layer 104 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm
- a layer thickness of about 10 nm to about 100 nm for example, a layer thickness of about 10 nm to about 100 nm according to an embodiment
- the first barrier layer 104 may be one or more
- having high refractive index materials for example one or more high refractive index materials, for example having a refractive index of at least 2.
- Barrier layer 104 can be omitted, for example, in the event that the carrier 102 hermetically sealed
- the electrically active region 106 can be understood as the region of the optoelectronic component 130 in which an electric current flows for the operation of the optoelectronic component 130.
- the first electrode 110 may be formed of or be made of an electrically conductive material, such as a metal, a conductive transparent oxide (TCO), metallic networks
- Nanowires and particles for example of Ag
- Networks of carbon nanotubes Graphene particles and layers; Networks of semiconducting nanowires; an electrically conductive polymer or transition metal oxides or a layer stack of several layers thereof
- the first electrode 110 may comprise as metal one of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials.
- the first electrode 110 may have, as a transparent conductive oxide, one of the following materials:
- metal oxides for example, zinc oxide,
- binary metal oxygen compounds such as ZnO, SnO 2, or 1 ⁇ 03
- ternary metal oxygen compounds such as AlZnO, Zn2Sn04, CdSn03, ⁇ 5 ⁇ 3, MgI 2 ⁇ , Galn03, ⁇ 2 ⁇ 2 ⁇ 5 or In 4 Sn30i2 or mixtures of different transparent conductive oxides to the group of TCOs and can in different
- Embodiments are used. Farther
- the TCOs do not necessarily correspond to a stoichiometric composition and may furthermore be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).
- the first electrode 110 may be formed by a
- Layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.
- ITO indium tin oxide
- the first electrode 110 may have a layer thickness of less than or equal to about 25 nm, for example a
- the first electrode 110 may have, for example, a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm, for example a layer thickness of less than or equal to approximately 18 nm
- the first electrode 110 may have a layer thickness, for example
- the first electrode 110 may be one of the following structures on iron or formed from: a
- a network of metallic nanowires such as Ag, combined with conductive polymers; a network of carbon nanotubes combined with conductive polymers; or graphene layers and
- the first electrode 110 may have a layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm,
- the first electrode 110 can be used as the anode, ie as
- hole-injecting electrode may be formed or as
- Cathode so as an electron injecting electrode.
- the first electrode 110 may be a first electrical
- the first electrical potential may be provided by a power source (not shown), such as a power source or a voltage source 11e).
- the first electrical potential may be applied to an electrically conductive carrier 102 and the first Electrode 110 be indirectly fed by the carrier 102 electrically.
- the first electrical potential can be provided by a power source (not shown), such as a power source or a voltage source 11e).
- the first electrical potential may be applied to an electrically conductive carrier 102 and the first Electrode 110 be indirectly fed by the carrier 102 electrically.
- the first electrical potential can be provided by a power source (not shown), such as a power source or a voltage source 11e).
- the ground potential for example, the ground potential or another
- FIG. 1 shows an optoelectronic component 130 having a first organic functional layer structure unit 116 and a second organic functional one
- Layer structure 112 but also have one or more than two organic functional layer structures, for example, 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example 70th
- the second organic functional layered structure unit 120 or the other organic functional
- the first organic functional layer structure unit 116 may include a hole injection layer, a
- one or more of said layers may be provided, wherein the same layer may be in physical contact with each other only electrically
- each other may be connected or even electrically isolated from each other, for example can be arranged side by side. Individual layers of said layers may be optional.
- a hole nj edictions slaughter may be formed on or above the first electrode 110.
- the hole injection layer may include one or more of the following materials exhibit or can be formed therefrom: HAT-CN, Cu (I) pFBz, MoO x, WO x, VO x, ReO x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc ; NPB ( ⁇ , ⁇ '-bis (naphthalen-1-yl) -N, 1 -bis (phenyl) -benzidine); beta-NPB ⁇ , ⁇ '-bis (naphthalen-2-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine); TPD
- the hole-injection layer may have a layer thickness in a range from about 10 nra to about 1000 nra, for example in a range from about 30 nra to about 300 nm, for example in a range from about 50 nm to about 200 nm.
- a layer thickness in a range from about 10 nra to about 1000 nra, for example in a range from about 30 nra to about 300 nm, for example in a range from about 50 nm to about 200 nm.
- a layer thickness in a range from about 10 nra to about 1000 nra, for example in a range from about 30 nra to about 300 nm, for example in a range from about 50 nm to about 200 nm.
- Hole transport layer be formed.
- Hole transport layer may comprise or be formed from one or more of the following materials: NPB (N, N 1 -bis (naphthalen-1-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine); beta-NPB ⁇ , ⁇ '-bis (naphthalen-2-yl) - ⁇ , ⁇ '-bis (phenyl) -benzidine); TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) benzidine); Spiro TPD ( ⁇ , ⁇ '-bis (3-methylphenyl) -N, N 1 -bis (phenyl) -benzidine); Spiro-NPB ('N'-bis (naphthalen-1-yl) -N,' -bis (phenyl) -spiro); DMFL-TPD ⁇ , ⁇ '-bis (3-methylphenyl) - ⁇ , ⁇ '-bis (phenyl) -9,9-d
- the hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm,
- nm for example, in a range of about 10 nm to about 30 nm, for example about 20 nm.
- Emitter layer be formed.
- Each of the organic functional layer structure units 116, 120 may each have one or more Have emitter layers, for example with fluorescent and / or phosphorescent emitters.
- 116, 120 may generally be one or more
- the one or more electroluminescent layers may or may not be organic polymers, organic oligomers,
- organic monomers organic small, non-polymers
- the optoelectronic component 130 may be in a
- Emitter layer comprise or be formed from one or more of the following materials: organic or
- organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (bis 2-pyridyl) phenyl - (2-carboxypyridyl) iridium III), green phosphorescent
- non-polymeric emitters are, for example, by means of
- Polymer emitter are used, which are deposited, for example by means of a wet chemical process, such as a spin-on (also referred to as spin coating).
- the emitter materials can be used in suitably embedded in a matrix material, for example a technical ceramic or a polymer, for example an epoxide; or a silicone, in various embodiments, the
- Emitter layer have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.
- the emitter materials may be selected such that the optoelectronic component 130 emits white light.
- the emitter layer (s) can have several
- emitter materials for example blue and yellow or blue, green and red emitting emitter materials
- the emitter layer (s) may also be composed of several sublayers, such as a blue one
- the emission of light can result in a white color impression.
- it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially covers the primary radiation
- Primary radiation through the combination of primary radiation and secondary radiation gives a white color impression.
- the emitter materials of various organic functional layered structure units 116, 120 may be or may be chosen so that, although the individual emitter materials emit light of different colors (eg, blue, green or red, or any other color combinations, for example, any other complementary color combinations) for example, the total that emits from all organic functional layer structures as a whole is emitted from the OLED to the outside, is a light of predetermined color, such as white light.
- different colors eg, blue, green or red, or any other color combinations, for example, any other complementary color combinations
- the organic functional layer structure unit 116 may include one or more electroluminescent layers
- the organic functional layer structure unit 116 may comprise one or more emitter layers, which is or are embodied as an electron transport layer, such that, for example, an effective electron injection into an electroluminescent layer or a layer may occur
- electroluminescent region is made possible.
- Be formed electron transport layer for example, be deposited.
- the electron transport layer may include or be formed from one or more of the following materials: NET- 18; 2,2 ', 2 "- ⁇ 1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1 , 3, 4 -oxadiazoles, 2, 9-dimethyl, 7-diphenyl-l, 10-phenanthrolines (BCP) 8-hydroxyquinolinolato-lithium, 4 - (naphthalen-1-yl) -3, 5-diphenyl-4H- l, 2, 4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazol-5-yl] benzene; 4,7-diphenyl-1 , 10-phenanthrolines (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-buty
- the electron transport layer may have a layer thickness
- iron in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.
- the electron transport layer may be a
- An electron injection layer may include or may be formed of one or more of the following materials: NDN-26, MgAg, Cs 2 C0 3 , Cs 3 P0 4 , Na, Ca, K, Mg, Cs, Li, LiF; 2,2 ', 2 "- (1,3,5-benzinetriyl) tris (1-phenyl-1-H-benzimidazole); 2 - (-biphenylyl) -5- (-tert-butylphenol 1) - 1, 3, 4-oxadiazoles, 2, 9-dimethyl-4,7-diphenyl-l, 10-phenanthroline (BCP), 8-hydroxyquinolinolato-lithium, 4 - (naphthalen-1-yl) -3, 5-diphenyl-4H -l, 2,4-triazoles; 1,3-bis [2- (2,2-bipyridine-6-yl) -1,3-oxadiazol-5-yl] benzene; 4,7-diphenyl-1
- the electron injection layer may have a layer thickness in a range of about 5 nm to about 200 nm, for example, in a range of about 20 nm to about 50 nm, for example about 30 nm.
- the second organic functional layer structure unit 120 may be formed above or next to the first functional layer structure units 116. Between the organic functional
- Layer structure units 116, 120 may be a
- Intermediate layer 118 may be formed.
- An intermediate electrode 118 may be electrically connected to an external voltage source.
- the external voltage source may, for example, have a third electrical potential at the intermediate electrode 118
- the intermediate electrode 118 may also have no external electrical connection,
- the intermediate electrode having a floating electrical potential.
- the intermediate electrode having a floating electrical potential.
- Intermediate layer 118 may be formed as a charge generation layer layer structure 118 (a so-called charge generation layer CGL).
- a charge carrier pair Generation layer structure 118 may include one or more electron-conducting charge carrier pair generation layer (s) and one or more hole-conducting charge carrier pair generation layer (s). The electron-conducting
- the charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) may each be formed of an intrinsic conductive substance or a dopant in a matrix.
- the carrier pair generation layer pattern 118 should be formed with respect to the energy levels of the electron-conducting carrier generation layer (s) and the hole-conducting carrier generation layer (s) such that at the interface of an electron-conducting carrier generation pair with a hole-conducting Charge carrier generation layer can be a separation of electron and hole.
- the carrier pair generation layer structure 118 may include a layer between adjacent layers
- Interlayer structure for example, as
- Layer structures may be provided a respective charge carrier pair generation layer structure.
- Each organic radioactive layered structure unit 116, 120 may have a layer thickness on iron of at most
- a layer thickness of ma imal about 1, 2 ⁇ for example, a layer thickness of at most about 1 ⁇ , for example, a layer thickness of at most about 800 nm, for example, a layer thickness of about 500 nm, for example, a maximum layer thickness about 400 nm, for example, a layer thickness of at most about 300 nm.
- the optoelectronic component 130 may optionally have further organic functional layers, for example arranged on or over one or more
- the further organic functional layers can be, for example, internal or external coupling / decoupling structures, which are the
- the second electrode 114 may be formed.
- the second electrode 114 may be formed according to any one of the configurations of the first electrode 110, wherein the first electrode 110 and the second electrode 114 may be the same or different. In various embodiments, metals are particularly suitable.
- the second electrode 114 can be used as the anode, ie as
- hole-injecting electrode may be formed or as
- Cathode so as an electron injecting electrode.
- the second electrode 114 may have a second electrical connection to which a second electrical connection
- the second electrical potential can be applied.
- the second electrical potential may be from the same or another source of energy
- the second electrical potential may be different from the first electrical potential and / or the optionally third electrical potential.
- the second electric potential may have a value such that the difference from the first electric potential has a value in a range of about 1.5 V to about 20 V, for example, a value in a range of about 2.5 H V until approx 15V, for example, a value in a range of about 3V to about 12V.
- the second barrier layer 108 may also be referred to as
- Thin-layer encapsulation may be referred to.
- Barrier layer 108 may be formed according to any of the embodiments of first barrier layer 104.
- the optoelectronic device 130 may, for example, comprise a further iron encapsulation structure, whereby a second barrier layer 108 may be optional, for example a cover 124, for example one
- one or more input / output coupling layers may be formed in the optoelectronic component 130, for example one, external outcoupling foil on or above the carrier 102 or an internal decoupling layer (not
- the input / outcoupling layer may have a matrix and scattering centers distributed therein, wherein the mean refractive index of the input / outcoupling layer is greater than the average refractive index of the layer from which the
- one or more antireflection coatings for example, one or more antireflection coatings
- Optoelectronic device 130 may be provided.
- a layer of an adhesive 122 may be provided on or over the second barrier layer 108 by means of which, for example, one
- Cover 124 on the second barrier layer 108 is conclusively connected, for example, is glued.
- the layer of adhesive 122 may be transparent or
- a layer of transparent adhesive 122 may
- the layer of adhesive 122 can act as a scattering layer and can lead to an improvement in the color angle acquisition and the coupling-out efficiency.
- dielectric As light-scattering particles, dielectric
- Streupartikei be provided, for example, from a
- Metal oxide for example silicon oxide (SiC> 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga20 x ) aluminum oxide, or titanium oxide.
- Other particles may also be suitable, provided that they have a refractive index that is different from the effective refractive index of the matrix of the layer of adhesive 122 and / or the protective varnish 122, for example air bubbles, acrylate or glass hollow spheres.
- Be provided light scattering particles.
- the layer of adhesive 122 may have a layer thickness of greater than 1 ⁇ , for example, a layer thickness of several ⁇ .
- the adhesive may include or may be a lamination adhesive.
- the adhesive 122 may be configured to have a refractive index that is less than that
- an adhesive may be, for example, a low-refractive adhesive such as an acrylate having a refractive index of about 1.3.
- an adhesive 122 may also be be high-refractive adhesive having, for example, high-refractive, non-diffusing particles and a schientdickenhav refractive index, the
- an electrically insulating layer (not shown) may be applied or be, for example SiN,
- Embodiments can be dispensed with entirely an adhesive 122, for example in embodiments in which the cover 124 are applied to the second barrier layer 108, for example, a cover 124 made of glass, which is formed by means of plasma spraying.
- a so-called getter layer or getter structure ie a laterally structured getter layer, can furthermore be arranged (not shown).
- the getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the electrically active region 106.
- a getter layer may comprise a zeolite derivative or be formed from it.
- the getter layer can be dispensed with entirely an adhesive 122, for example in embodiments in which the cover 124 are applied to the second barrier layer 108, for example, a cover 124 made of glass, which is formed by means of plasma spraying.
- a so-called getter layer or getter structure ie a laterally structured getter layer
- the getter layer may include or be formed of a
- the getter layer may have a layer thickness of greater than about 1 ⁇ , for example, a layer thickness of several Jim.
- the getter layer may include a lamination adhesive or be embedded in the layer of adhesive 122.
- the layer of adhesive 122 may be a
- Cover 124 may be formed.
- the cover 124 may be formed.
- the cover 124 may
- a glass cover 124 For example, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a glass cover 124, a
- the glass cover 124 may be provided, for example, by means of a frit bonding / glass soldering / seal glass bonding using a conventional glass solder in the geometric edge regions of the organic optoelectronic component 130 with the second barrier layer 108 or the electrically active region 106 be connected conclusively.
- the cover 124 and / or the layer of adhesive 122 may have a refractive index (for example, at a
- a planar structure 128 has at least one planar structure 128 which is on or above the carrier 102
- a planar structure 128 above the carrier 102 may be formed on the cover 124, for example.
- a planar structure 128 may have two or more planar structures.
- a planar structure 128 can For example, have a first planar structure and a second planar structure.
- the carrier 102 Between a first planar structure and a second planar structure, the carrier 102, the cover 124, the electrically active region 106 and / or the
- optoelectronic component 130 may be formed.
- the planar structure 128 may be formed as an internal and / or an external coupling-out structure.
- the sheet structure 128 may be patterned before, during or after being applied and / or formed on or over the backing.
- the sheet structure 128 may be applied in one piece to or over the carrier or
- planar structure as a
- Prestructure in the form of a solution, suspension, dispersion or paste are applied to or over the carrier 102.
- the pre-structure can be applied, for example, structured, for example by means of a mask process.
- the pre-structure can then be cured or crosslinked, for example, to a paint. This can be the area
- Structure 128 may be formed on or above the carrier 02.
- planar structure 128 is structured during application or by means of a
- structured application structured.
- a planar structure 128 in the form of a coating which is cured and / or crosslinked after application to or via the support, can be structured or structured only after curing and / or crosslinking.
- the Flat structure 128 may be patterned after application, for example serially by laser or a masking process, or during / after the conclusive
- a sheet structure 128 may be formed as a film or a crosslinked coating.
- a sheet-like structure 128 in the form of a film can be formed as a film or a crosslinked coating.
- a plastic film for example, be a plastic film, a metal foil or a thin glass.
- a sheet-like structure 128 in the form of a plastic film may comprise one of the following materials:
- PEN Polyethylene naphthalate
- PET polyethylene terephthalate
- PC polycarbonate
- PI polyimide
- a sheet-like structure 128 in the form of a metal foil may comprise or be made of one of the following materials
- Alloys for example steel, for example SUS.
- a sheet-like structure 128 in the form of a thin glass can be, for example, a soda lime glass with a thickness up to
- a sheet-like structure 128 may be formed as a heat-conducting structure, for example as a heat-conducting foil.
- a sheet-like structure 128 as a heat conduction structure may include or may be made of a thermally conductive layer
- a heat-conducting structure can be understood as having as its product its thickness d and its thermal conductivity k a value greater than about 1000 ptW / K, for example greater than about 5000 xW / K, for example greater than about 20000 ⁇ / ⁇ .
- the thickness of the layer may be less than about 10 mm, for example, less than about 2 mm, for example, less than about 100 ⁇ , ⁇ .
- a heat-conducting structure may comprise, for example, a graphene layer, for example a graphene-coated film, for example an aluminum foil, copper foil or a foil coated with aluminum or copper.
- a sheet-like structure 128 may be formed as a hermetically sealed structure with respect to light and / or water, for example as a barrier film, for example in the form of a plastic film with a barrier layer or a metal foil.
- the barrier layer of the planar structure may be formed, for example, according to one of the embodiments of the first barrier layer 104.
- a planar structure 128 may be formed as a decoupling film or coupling film, for example
- a planar structure 128 may be designed as UV protection, for example in that the planar structure 128 comprises or is formed from a UV-absorbing substance, for example one of the following substances: T1O2, CeC> 2, B12O3, ZnO, SnC> 2, a phosphor, UV-absorbing glass particles and / or suitable UV-absorbing metallic nanoparticles, wherein the phosphor, the glass particles and / or the
- Nanoparticles an absorption of electromagnetic
- a planar structure 128 may be designed as scratch protection, for example in that the planar structure 128 has a greater hardness than the carrier 102, the cover 124 and / or the optoelectronic component 130.
- a flat structure 128 may be the color
- Change appearance of the optoelectronic device 130, for example, by the planar structure 128 has a high gloss coating and / or color pigments.
- a planar structure 128 as a crosslinked coating can be formed, for example, from a plastic, which is crosslinked after application to the optoelectronic component 130 and optionally structured.
- the sheet structure 128 may comprise a crosslinked polymer or a silicone.
- a hermetically sealed carrier and a planar structure 128 having different materials form a so-called hybrid carrier 126.
- a hermetically sealed carrier may be an intrinsically hermetically sealed carrier, for example a carrier 102 made of a metal, glass or ceramic, or a carrier 102 having a first one
- FIG. 2 shows a diagram for a method for processing an electronic component arrangement.
- the method may include providing 202 a carrier with one electronic device or multiple electronic device units.
- the provision may be, for example, forming an optoelectronic component according to one of the
- Embodiments of the optoelectronic component 130 have the description of Fig.l.
- two or more identical or different electronic component units for example optoelectronic components according to one embodiment of the optoelectronic component 130 of FIG. 1, may be formed side by side on or above a common carrier.
- the method may include applying 204 a planar
- the application of the planar structure 204 may include applying a film or forming a crosslinkable surface coating.
- a planar structure, which is formed as a foil, may for example be a lamination foil,
- a plastic for example, a plastic, a plastic film, a coated plastic film, a metal foil, a
- the planar structure can be structured before application or structured after application.
- the structured planar structure may, for example, have nominal separation points, for example in the region of
- the application 204 of the planar structure may have an application 204 of a planar structure on the side of the carrier which faces away from the electronic component; or above the vehicle on the side of the electronic
- Component i. on the electronic component.
- the application 204 of the planar structure may include
- the application 204 of the planar structure can also have an application of the planar structure on or over individual regions of the carrier.
- the method can be a conclusive linking 206 of the
- a coherent bonding 206 of a sheet-like structure, which is formed as a film, for example, substance can be liquid, for example, a lamination. Lamination can be achieved, for example, by means of curing a
- UV-curable adhesive
- the conclusive bonding of the film to the carrier or an electronic component can be structured, for example, by applying the coherent bonding agent structured and / or cured.
- Connecting means can be formed, for example, different conclusive connections, if the
- the cohesive compound in the structured areas of the planar structure may have different cohesion and / or adhesion.
- the part of the sheet-like structure to be removed can be conclusively connected to the support and / or the electronic component in such a way that the removable part has less adhesion to the support or to the electronic component than the part of the planar structure that is located on the support Carrier or should remain on the electronic component.
- the different areas of laminated films may be printed with adhesives of different adhesive force, or be provided only in the adhesive areas with adhesive, so that the films in the areas that are to be removed later, can be easily removed.
- a conclusive connection 206 of a planar structure, which is formed as a crosslinkable coating can be easily removed.
- the method may include removing 208 a portion of
- Structure can be removed over an area for which external access or access should be possible.
- the part of the planar structure to be removed can be removed from the electronic component in which an electrical contact region is formed; from the carrier, is provided in the separation area.
- the contact region can be designed to contact the electronic component with an external voltage source.
- the separation area can be between two electronic component units for separating the electronic
- Component units may be arranged.
- the removal 208 of a part of the planar structure may include a separation or dissolution of the target separation points.
- the removal 208 of a part of the planar structure may also have a detachment of a part of the planar structure from the support or the electronic component 1, for example a removal, for example in one process step.
- the part of the sheet to be removed may be removed
- Structure in the interlocking connection 206 are not connected to the carrier or the electronic component conclusive.
- no coherent connection can be formed between the planar structure and the carrier or electronic component in the region of the part of the planar structure to be removed, for example, in that no adhesive is applied in this area or the adhesive is not cured.
- the method can be a singling of the plurality of electronic component units and / or a
- Components-units can be made in the area of the carrier on which the part of the sheet-like structure has been removed. This has the advantage that in the case of a carrier and a flat structure, which are materially different, the separating device needs to be set up only for severing the material of the carrier - because the flat surface
- Contacting the electronic component has an advantage that the contact areas are exposed in a defined manner.
- a provided electronic component 300 may have on a carrier 102 an electronic component 130 or a plurality of electronic component units 130.
- An electronic component 300 having a plurality of electronic component units 130n may have a plurality of same or
- n is an integer and the individual electronic
- On-device unit 13 On can be designed, for example, according to one of the embodiments of the descriptions of FIG. 1, for example as an organic light-emitting diode, as
- an electronic component 130 may comprise or be a micro electro mechanical system (MEMS).
- the electronic component 300 may, for example, have a plurality of light-emitting organic light-emitting diodes 13 On, which are set up as so-called bottom emitters.
- the carrier 102 the electronic component 300 may
- An electronic component 130 can be electrically connected to an external voltage source by means of electrical contact regions 302.
- the electrical contact regions 302 can be connected to the electrodes 110, 118, 114 of an embodiment of the optoelectronic component 130 of the description of FIG. 1, for example.
- An electronic component 130 may have two or more electrical
- the provided carrier 102 On the carrier 102 or over the carrier 102, i. on the electronic component 130, the provided
- a planar structure 128 may be applied or formed.
- Structure 128 may be patterned, for example having nominal separation locations 304 (shown in dashed lines 304 in FIG. 3B).
- the planar structure 128 may be formed, for example, as scratch protection on the optically inactive rear side of the organic light emitting diodes 13 On and the organic light emitting diode 130
- the planar structure 128 as scratch protection can be designed, for example, as scratch-resistant foil, for example as a metal foil, a plastic foil or a barrier foil.
- the planar structure 128 can For example, after the second barrier layer 108 (see description of FIG. 1) has been formed, it can be formed over the entire surface of the second barrier layer 108. For example, the planar structure 128 can be laminated onto the second barrier layer 108 as scratch-resistant foil 128.
- Desired separation points 304 can be selected design-specific, so that the
- Regions of the light emitting region of the organic light emitting diode 130 are divided.
- the planar structure 128 may, with regard to the desired separation points 304, if they are already formed in the planar structure, and the electronic
- Carrier 102 and / or the electronic component units are connected
- the desired separation points 304 may be formed only after the coherent connection of the planar structure 128 with the electronic component 300.
- Light-emitting diode 130 was laminated, for example, by means of a punching process or laser structuring be formed.
- a portion 306 of the sheet structure 128 may be removed from an area above the carrier 102, so that at least a portion of the sheet structure 128 over the
- Carrier 102 remains.
- the removed portion 306 of the sheet structure 128 may be removed, for example, peeled off in one piece (shown in Fig. 3D as an offset portion of the sheet 128).
- the desired separation points 304 were separated before removal.
- the separation can be done for example by means of a ballistic exposure, a mechanical force or by means of a chemical removal.
- Ballistic exposure can be achieved, for example, by bombarding the area to be cleared with particles,
- Molecules, atoms, ions, electrons and / or photons can be realized.
- a shelling with photons can be realized.
- a chemical removal may, for example, be a dissolution of the desired separation sites with a solvent or etching of the desired separation sites.
- the electronic component arrangement 310 after removing a part 306 of the planar structure with respect to the provided electronic component 300 differs in that a part of the planar structure 128 on the carrier 102 and / or on the electronic component
- the removed part 306 of the planar structure 128 may, for example, be a separating region 308 (shown in FIG. 3E by means of the dashed-dotted line) and / or a
- the dicing region 308 is free of planar structure 128, the
- Separation device 312 be set up with respect to a severing of the material of the carrier 102. By means of the uncovering of the singulation region 308, the wear of the singling device 312 can thus be reduced and / or it is only possible to singulate in the first place.
- a singulator 312 may be, for example, a laser or a scoring wheel (shown in Fig. 3E).
- a plurality of electronic components 130 with a planar structure 128 are formed (shown in FIG. 3F by means of the electronic components 314 shown separately).
- the singulation can, for example, by means of a
- the glass carrier 102 can be divided by a scoring wheel 308 in a scoring and crushing experience, so that the electronic
- Components-units 130n is divided into individual components. This is possible, for example, even with thick glass supports 102. Such glass supports 102 are organic
- Light emitting diodes 130 which are equipped with a glass cover (see
- 4A-C show schematic illustrations of optoelectronic component arrangements in the method for processing according to various exemplary embodiments.
- the sheet structure 128 is formed as a foil and is applied to the electronic component 130 above the carrier 102, with subsequent removal of a portion of the planar structure 128 - shown in a side view in FIG. 4A, in one piece Part 306 of the plane
- the planar structure 128 may, for example, a
- Be plastic film for example, PEN, PET, PC, PI, optionally with a barrier layer; a metal foil and / or a thermal pad; for example, according to one of the above embodiments.
- the carrier 102 may be or have a glass
- a soda-lime glass for example, having a thickness greater than about 1 mm, for example according to one of the above embodiments.
- the carrier 102 may be formed of a metal or have a metal. Nevertheless, in order to couple or emit light into the optoelectronic device, the planar structure 128 should be transparent or translucent.
- the planar structure 128 can be applied to the carrier 102 or over the carrier 102 in a structured or full-surface manner.
- planar structure 128 When applying or forming the planar structure 128 over the carrier 102, the planar structure 128 can be applied or formed on the carrier 102 and / or on the electronic component 130.
- the electronic component 130 may be an optoelectronic component 130, which is designed as a so-called bottom emitter, top emitter, or a transparent component.
- the method can be used, for example, when applying a scratch-resistant foil, a barrier foil or a UV protective foil, for example on an optically inactive side of the organic light-emitting diode.
- a further planar structure on the support 102 may be applied (illustrated in FIG. 4B by means of the reference numeral 402).
- the further planar structure can be applied to the carrier 102 in a structured or full-surface manner. From the others
- Fig. 4B shown by reference numeral 404) to expose an area requiring external access.
- the further planar structure 402 may be formed as a coupling-out foil 402,
- the Electronic Component Units 13 may be applied to a scratch contactor (indicated by reference numeral 406 in Fig. 4C).
- the scratcher 406 may be, for example, a glass or a paint and, for example, have a greater hardness than the electronic component 130.
- the scratcher 406, for example, according to one of
- Embodiments of the cover 124 may be formed.
- a further planar structure 402 can or will be applied on the side of the carrier 102 which faces away from the electronic component units 130.
- organic light-emitting diodes 130n can be singled, which have a glass carrier 102 and a glass cover 406, and in which on the
- Disk plane i. on the level of the electronic component 300, perforated scattering films 402 on the
- planar structure 402 of the singulation area the carrier 102 with a planar structure 402 could not be singulated.
- One reason for this is analogous to the representation in the description of FIG. 3, that the planar structure 402 can not be scratched.
- 5A-5F show schematic illustrations of optoelectronic component arrangements in the method for processing according to various exemplary embodiments.
- the provided electronic component 300 has on a carrier an electronic component 130 or a plurality of electronic component units 13 On - shown in FIG. 5A - as described in connection with FIG. 3A.
- Electronic components 300 may be formed according to any of the embodiments described above.
- the electronic component 300 may, for example, a plurality of light-emitting organic light-emitting diodes 130n on iron, which are set up as so-called bottom emitter.
- An organic light-emitting diode 130 may have on the optically inactive back contact areas, which to a
- Structure 128 applied or formed, are formed in the desired separation points 304 or formed.
- the planar structure 128 may be formed such that the desired separation points 304 surround a part of the planar structure to be removed (shown in FIG. 5B with the reference numeral 306).
- the planar structure 128 can, for example, as scratch protection on the optically inactive back of the organic
- Light emitting diodes 130 may be formed and the organic
- planar structure 128 as a scratch protection can be configured for example as scratch-resistant.
- the scratch protection film can in the contact areas of an organic compound
- Light-emitting diode 130n should be provided for nominal separation points
- the planar structure 128 may have regard to the structure and arrangement of the electronic component 130 or the electronic component units 130n and / or the
- Contact areas 302 are formed or applied.
- planar structure 128 can be aligned or formed in such a way that the part 306 of the planar structure 128 to be removed is above the contact areas 302 - shown in FIG. 5C by means of the area 306 to be removed above the contact areas 302.
- the part 306 of the planar structure 128 to be removed can be removed from the contact regions 302 of the electronic component 130 after separating the desired separating locations 128 from the electronic component 300, for example in one piece in each case - illustrated in FIG removing areas 306.
- the areas 306 to be removed can be removed from the electronic component 300, for example, by means of an adhesive-coated roll in one piece. Except the removal of the sheet structure 128 over the
- planar structure 128 can optionally also be removed from separation areas 308 (see description in FIG. 3). In other words, the separation of the carrier and the planar structure can take place at the same place.
- individualization of the electronic component units 130n may be possible without removing the planar structure 128 from the singulation area 308 from the carrier 102 (shown in FIG. 5A with a planar structure 128 over the singulation area 308). This may for example be the case when the planar structure 128 and the carrier 102 with respect to the
- planar structure 128 and the carrier 102 can be designed such that they can be severed at the same time, so that removal of the planar structure 128 from the singulation region 308 becomes optional.
- the singulation can take place according to an embodiment mentioned above,
- a method for processing an electronic device and a
- the lamination of the scattering film can already be carried out on the board level instead of on a single-component level as hitherto.
- the contact areas of the OLED can thereby be exposed in a very simple way when producing an OLED.
- the singulation of the substrate of the OLED and a film on the substrate may be at the same location
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- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020167002170A KR102234462B1 (ko) | 2013-06-25 | 2014-06-13 | 전자 컴포넌트를 프로세싱하기 위한 방법 및 전자 컴포넌트 어레인지먼트 |
CN201480036806.4A CN105409030B (zh) | 2013-06-25 | 2014-06-13 | 用于加工电子器件的方法和电子器件装置 |
US14/901,110 US9741965B2 (en) | 2013-06-25 | 2014-06-13 | Method for processing an electronic component and electronic component arrangement |
Applications Claiming Priority (2)
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DE102013106631.3 | 2013-06-25 | ||
DE102013106631.3A DE102013106631B4 (de) | 2013-06-25 | 2013-06-25 | Verfahren zum Bearbeiten eines elektronischen Bauelements und elektronische Bauelementeanordnung |
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US (1) | US9741965B2 (de) |
KR (1) | KR102234462B1 (de) |
CN (1) | CN105409030B (de) |
DE (1) | DE102013106631B4 (de) |
WO (1) | WO2014206775A1 (de) |
Families Citing this family (6)
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DE102010055901A1 (de) * | 2010-12-23 | 2012-06-28 | Merck Patent Gmbh | Organische Elektrolumineszenzvorrichtung |
CN105633281B (zh) * | 2016-01-06 | 2018-07-17 | 京东方科技集团股份有限公司 | 一种柔性显示面板及其封装方法、显示装置 |
DE102016116132A1 (de) | 2016-08-30 | 2018-03-01 | Osram Oled Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen desselben |
DE102016012644A1 (de) * | 2016-10-24 | 2018-04-26 | Azur Space Solar Power Gmbh | Nutzen von Solarzelleneinheiten und Herstellungsverfahren |
DE102016012645A1 (de) * | 2016-10-24 | 2018-04-26 | Azur Space Solar Power Gmbh | Halbzeuganordnung auf einer Folie und ein Herstellungsverfahren für eine Halbzeuganordnung auf einer Folie |
KR20190007942A (ko) * | 2017-07-14 | 2019-01-23 | 코닝 인코포레이티드 | 다층 구조물 패터닝 방법 |
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JP2006331905A (ja) * | 2005-05-27 | 2006-12-07 | Optrex Corp | 光学パネルの製造方法 |
US20060286718A1 (en) * | 2005-06-17 | 2006-12-21 | Alps Electric Co., Ltd. | Manufacturing method capable of simultaneously sealing a plurality of electronic parts |
WO2009110067A1 (ja) * | 2008-03-04 | 2009-09-11 | 東北パイオニア株式会社 | 有機elパネルの製造方法及び有機elパネル |
WO2012164612A1 (ja) * | 2011-05-31 | 2012-12-06 | パナソニック株式会社 | 接合体の製造方法及び接合体 |
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DE20215401U1 (de) * | 2002-10-07 | 2004-02-19 | Schott Glas | Verbund aus einem Dünnstsubsrat und einem Trägersubstrat mit lösbarem Verbindungsmittel |
JP2007234331A (ja) | 2006-02-28 | 2007-09-13 | Tohoku Pioneer Corp | 自発光パネルの封止用部材、自発光パネルの製造方法、および自発光パネル |
JP2009123645A (ja) * | 2007-11-19 | 2009-06-04 | Hitachi Displays Ltd | 有機el表示装置およびその製造方法 |
DE102008031533B4 (de) | 2008-07-03 | 2021-10-21 | Pictiva Displays International Limited | Organisches elektronisches Bauelement |
KR20130025113A (ko) * | 2011-09-01 | 2013-03-11 | 엘지디스플레이 주식회사 | 평판 표시장치의 제조방법 |
KR101174834B1 (ko) | 2012-04-05 | 2012-08-17 | 주식회사 다보씨앤엠 | 공정필름을 이용한 필름형 디스플레이 기판의 제조방법 및 이에 사용되는 필름형 디스플레이 기판 제조용 공정필름 |
-
2013
- 2013-06-25 DE DE102013106631.3A patent/DE102013106631B4/de active Active
-
2014
- 2014-06-13 US US14/901,110 patent/US9741965B2/en active Active
- 2014-06-13 CN CN201480036806.4A patent/CN105409030B/zh active Active
- 2014-06-13 WO PCT/EP2014/062449 patent/WO2014206775A1/de active Application Filing
- 2014-06-13 KR KR1020167002170A patent/KR102234462B1/ko active IP Right Grant
Patent Citations (5)
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JP2006331905A (ja) * | 2005-05-27 | 2006-12-07 | Optrex Corp | 光学パネルの製造方法 |
US20060286718A1 (en) * | 2005-06-17 | 2006-12-21 | Alps Electric Co., Ltd. | Manufacturing method capable of simultaneously sealing a plurality of electronic parts |
WO2009110067A1 (ja) * | 2008-03-04 | 2009-09-11 | 東北パイオニア株式会社 | 有機elパネルの製造方法及び有機elパネル |
WO2012164612A1 (ja) * | 2011-05-31 | 2012-12-06 | パナソニック株式会社 | 接合体の製造方法及び接合体 |
US20140127480A1 (en) * | 2011-05-31 | 2014-05-08 | Panasonic Corporation | Method for manufacturing joined body, and joined body |
Also Published As
Publication number | Publication date |
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US20160149158A1 (en) | 2016-05-26 |
CN105409030B (zh) | 2018-12-18 |
KR102234462B1 (ko) | 2021-03-30 |
DE102013106631A1 (de) | 2015-01-08 |
CN105409030A (zh) | 2016-03-16 |
DE102013106631B4 (de) | 2017-07-27 |
KR20160024395A (ko) | 2016-03-04 |
US9741965B2 (en) | 2017-08-22 |
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