WO2014188845A1 - 積層セラミックコンデンサ - Google Patents
積層セラミックコンデンサ Download PDFInfo
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- WO2014188845A1 WO2014188845A1 PCT/JP2014/061657 JP2014061657W WO2014188845A1 WO 2014188845 A1 WO2014188845 A1 WO 2014188845A1 JP 2014061657 W JP2014061657 W JP 2014061657W WO 2014188845 A1 WO2014188845 A1 WO 2014188845A1
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- dielectric ceramic
- multilayer ceramic
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- capacitor
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- 239000003985 ceramic capacitor Substances 0.000 title claims description 50
- 239000000919 ceramic Substances 0.000 claims abstract description 84
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 229910052788 barium Inorganic materials 0.000 claims abstract description 9
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 4
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 3
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 239000003990 capacitor Substances 0.000 claims description 31
- -1 and Sm) Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 abstract description 2
- 239000000843 powder Substances 0.000 description 31
- 239000000203 mixture Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 239000002994 raw material Substances 0.000 description 13
- 238000007747 plating Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 238000009616 inductively coupled plasma Methods 0.000 description 9
- 238000002156 mixing Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000004611 spectroscopical analysis Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000001027 hydrothermal synthesis Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
- H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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- H—ELECTRICITY
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- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
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- H—ELECTRICITY
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- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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- H01G4/00—Fixed capacitors; Processes of their manufacture
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- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
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- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/248—Terminals the terminals embracing or surrounding the capacitive element, e.g. caps
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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Definitions
- the present invention relates to a multilayer ceramic capacitor used in a high temperature environment such as that used in vehicles.
- the guaranteed temperature on the high temperature side of multilayer ceramic capacitors is determined based on insulation and high temperature load reliability (lifetime in high temperature load tests).
- the guaranteed temperature is generally 85 ° C. for consumer use and 125 ° C. for industrial equipment that requires high reliability.
- a dielectric ceramic composition suitable for use in a multilayer ceramic capacitor that satisfies such requirements is described in, for example, Japanese Patent Application Laid-Open No. 2011-207630 (Patent Document 1).
- the dielectric ceramic composition described in Patent Document 1 has a composition formula: 100 (Ba 1-x Ca x ) TiO 3 + aR 2 O 3 + bV 2 O 5 + cZrO 2 + dMnO (where R is Y, La, Sm) , Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, and a, b, c and d represent a molar ratio. 0.03 ⁇ x ⁇ 0.20, 0.05 ⁇ a ⁇ 3.50, 0.22 ⁇ b ⁇ 2.50, 0.05 ⁇ c ⁇ 3.0, and 0.01 ⁇ d ⁇ 0. Each of the 30 conditions is satisfied.
- the multilayer ceramic capacitor using the above dielectric ceramic composition has an MTTF (Mean Time To Failure) of 50 hours or more in a high-temperature load test in which a DC voltage having an electric field strength of 20 V / ⁇ m is applied at a temperature of 175 ° C. It has been confirmed that it has excellent high temperature load reliability.
- MTTF Mel Time To Failure
- Multilayer ceramic capacitors for in-vehicle use are assumed to be used as parts for electrical equipment mounted in engine rooms that are always in a high temperature environment.
- a multilayer ceramic capacitor used in an ECU (Electronic Control Unit) mounted near the cylinder head of an engine may be exposed to a particularly high temperature.
- a higher guaranteed temperature of 200 ° C. or higher may be required.
- an object of the present invention is to provide a multilayer ceramic capacitor having excellent high temperature load reliability even when used in a high temperature environment such as in-vehicle use.
- the dielectric ceramic composition used for the dielectric ceramic layer is improved.
- the multilayer ceramic capacitor according to the present invention includes a capacitor body and a plurality of external electrodes.
- the capacitor body includes a plurality of laminated dielectric ceramic layers and a plurality of internal electrodes formed along the interface between the dielectric ceramic layers.
- the plurality of external electrodes are formed at different positions on the outer surface of the capacitor body and are electrically connected to the internal electrodes.
- the dielectric ceramic layer includes Ba, Re (where Re is at least one element selected from La, Ce, Pr, Nd, and Sm), Ti, Zr, and M (elements).
- M contains at least one element selected from Mg, Al, Mn and V) and Si, and optionally contains Sr.
- the dielectric ceramic layer includes a perovskite type compound including Ba, Re, Ti, and Zr as compounds, and optionally including Sr.
- the amount of elements contained in the dielectric ceramic layer is expressed in mole parts
- the amount of Sr is 0 ⁇ a ⁇ 20.0
- Re amount b is 0.5 ⁇ b ⁇ 10.0
- Zr amount c is 46 ⁇ c ⁇ 90
- M amount d is 0.5 ⁇ d ⁇ 10.0
- Si amount e is 0.5 ⁇
- e ⁇ 5.0 and the ratio m of the sum of Ba, Sr and Re to the sum of Ti and Zr is 0.990 ⁇ m ⁇ 1.050 ( Hereinafter, the first condition is satisfied.
- the multilayer ceramic capacitor described above has excellent high temperature load reliability that MTTF is 100 hours or more when a high temperature load test is performed at a temperature of 200 ° C. and a DC voltage of an electric field strength of 15 V / ⁇ m is applied. Moreover, the dielectric constant ( ⁇ r ) of the dielectric ceramic is 70 or more.
- the amount of elements contained in the dielectric ceramic layer when the amount of elements contained in the dielectric ceramic layer is expressed in mole parts, when the total of the amount of Ti and the amount of Zr is 100, the amount of Sr a Is 0 ⁇ a ⁇ 20.0, Re amount b is 0.5 ⁇ b ⁇ 5.0, Zr amount c is 46 ⁇ c ⁇ 80, M amount d is 0.5 ⁇ d ⁇ 5.0, The amount m of Si is 1.0 ⁇ e ⁇ 3.0, and the ratio m of the sum of the amount of Ba, the amount of Sr, and the amount of Re to the sum of the amount of Ti and the amount of Zr is 0.990 ⁇ You may make it satisfy
- fill each condition (henceforth the 2nd condition) of m ⁇ 1.050.
- the above multilayer ceramic capacitor has excellent high-temperature load test of the further dielectric ceramic epsilon r of 100 or more.
- the amount of elements contained in the dielectric ceramic layer when the total of the amount of Ti and the amount of Zr is 100, the amount of Sr a Is 0 ⁇ a ⁇ 20.0, Re amount b is 1.0 ⁇ b ⁇ 5.0, Zr amount c is 60 ⁇ c ⁇ 80, M amount d is 1.0 ⁇ d ⁇ 5.0, The amount m of Si is 1.0 ⁇ e ⁇ 3.0, and the ratio m of the sum of the amount of Ba, the amount of Re, and the amount of Sr to the sum of the amount of Ti and the amount of Zr is 1.010 ⁇ You may make it satisfy
- fill each condition (henceforth the 3rd condition) of m ⁇ 1.040.
- the MTTF When the above multilayer ceramic capacitor is subjected to a high temperature load test under the above conditions, the MTTF has a further excellent high temperature load reliability of 150 hours or more, and the dielectric ceramic has an ⁇ r of 100 or more. .
- the multilayer ceramic capacitor according to the present invention has excellent high temperature load reliability that MTTF is 100 hours or more when a high temperature load test is performed at a temperature of 200 ° C. and a DC voltage of an electric field strength of 15 V / ⁇ m is applied.
- ⁇ r of the dielectric ceramic is 70 or more.
- FIG. 1 is a perspective view showing an appearance of a multilayer ceramic capacitor 1 according to an embodiment of the present invention.
- FIG. 2 is a front sectional view of the multilayer ceramic capacitor 1 shown in FIG. 1. It is a figure for demonstrating the measuring method of the thickness of the dielectric ceramic layer 3 of the multilayer ceramic capacitor 1 shown in FIG.
- the multilayer ceramic capacitor 1 includes a capacitor body 2.
- the capacitor body 2 includes a plurality of dielectric ceramic layers 3 that are stacked, and a plurality of internal electrodes 4 and 5 that are formed along a plurality of interfaces between the plurality of dielectric ceramic layers 3, respectively.
- the internal electrodes 4 and 5 are formed so as to reach the outer surface of the capacitor body 2.
- the internal electrode 4 is formed so as to reach one end face 6 of the capacitor body 2
- the internal electrode 5 is formed so as to reach the other end face 7.
- the internal electrodes 4 and the internal electrodes 5 are alternately arranged inside the capacitor body 2.
- External electrodes 8 and 9 are formed on the outer surface of the capacitor body 2 and on the end faces 6 and 7, respectively. If necessary, a first plating layer made of Ni, Cu, or the like may be formed on the external electrodes 8 and 9, respectively. Furthermore, a second plating layer made of solder, Sn or the like may be formed thereon.
- a raw material powder for the dielectric ceramic composition is prepared, this is slurried, and this slurry is formed into a sheet shape to obtain a green sheet for the dielectric ceramic layer 3.
- the dielectric ceramic raw material powder the raw material powder for the dielectric ceramic composition according to the present invention is used as will be described in detail later.
- the dielectric ceramic raw material powder manufacturing method is not limited as long as the type and compound of the element contained in the dielectric ceramic layer 3 and the amount of the element satisfy each condition defined in the present invention. Various methods may be used. As the material to be used, various forms such as carbonates, oxides, hydroxides, and chlorides can be used.
- a manufacturing method (synthesis method) of the perovskite type compound powder various known methods such as a hydrothermal method as well as a solid phase method in which materials made of carbonates and oxides are mixed and calcined are synthesized. It may be used. Also, BaTiO 3 or BaZrO 3 prepared by a hydrothermal method or the like and a variety of materials are mixed so as to obtain a desired perovskite type compound composition, and calcined to produce a perovskite type compound powder. Also good.
- the dielectric ceramic raw material powder may be a mixture of BaTiO 3 or BaZrO 3 produced by a hydrothermal method and various materials. Then, when the capacitor body is fired, they may react to synthesize a perovskite type compound including Ba, Re, Ti, and Zr, and optionally including Sr.
- the internal electrodes 4 and 5 are formed on each main surface of the specific one of the obtained green sheets.
- the conductive material constituting the internal electrodes 4 and 5 Ni, Ni alloy, Cu, Cu alloy, or the like can be used. Usually, Ni or Ni alloy is used.
- These internal electrodes 4 and 5 are usually formed by a screen printing method or a transfer method using a conductive paste containing the above conductive material powder.
- the internal electrodes 4 and 5 are not limited to these, and may be formed by any method.
- the required number of green sheets for the dielectric ceramic layer 3 on which the internal electrodes 4 or 5 are formed are stacked, and the green sheets are sandwiched between an appropriate number of green sheets on which the internal electrodes are not formed.
- a raw capacitor body is obtained by thermocompression bonding.
- This raw capacitor body is fired at a predetermined temperature in a predetermined reducing atmosphere to obtain a sintered capacitor body 2.
- External electrodes 8 and 9 are formed on both end faces 6 and 7 of sintered capacitor body 2 so as to be electrically connected to internal electrodes 4 and 5, respectively.
- the conductive material constituting these external electrodes 8 and 9 Ni, Ni alloy, Cu, Cu alloy, Ag, Ag alloy, or the like can be used. Usually, Cu or Cu alloy is used.
- the external electrodes 8 and 9 are usually formed by applying a conductive paste obtained by adding glass frit to a conductive material powder on both end faces 6 and 7 of the capacitor body 2 and baking the conductive paste.
- the conductive paste to be the external electrodes 8 and 9 may be applied to the raw capacitor body before firing and baked simultaneously with firing to obtain the capacitor body 2.
- the multilayer ceramic capacitor 1 is completed as described above.
- powders of MgCO 3 , Al 2 O 3 , MnCO 3 , and V 2 O 5 were prepared as M materials contained in the dielectric ceramic layer.
- a SiO 2 powder was prepared as a Si material. Each powder had a purity of 99% by weight or more.
- the amount of M is d, where the sum of the amount of Ti and the amount of Zr is 100.
- the amount e of Si were weighed and prepared so that the values shown in Tables 1 and 2 were obtained. At the time of blending, the blending amount was corrected according to the purity of each powder.
- a material such as ZrO 2 may be added at the stage of mixing the perovskite type compound powder, the M material, and the Si material.
- ZrO 2 may be mixed from materials other than the weighed material, such as when YSZ (Ytria Stabilized Zirconia) balls are used as media in the wet mixing process. In that case, the blending amount of the ZrO 2 powder was adjusted so that the composition of Table 1 and Table 2 including the mixing amount was obtained.
- YSZ Ytria Stabilized Zirconia
- These raw material powders for dielectric ceramics may contain Ca and Hf as inevitable impurities, but it has been separately confirmed that they do not affect the effects of the present invention.
- ICP emission spectral analysis is an abbreviation for Inductively Coupled Plasma (high frequency inductively coupled plasma) emission spectral analysis.
- the dielectric ceramic raw material powder had substantially the same composition as the compositions shown in Tables 1 and 2.
- a polyvinyl butyral binder, a plasticizer and an organic solvent such as ethanol were added and wet mixed by a ball mill to obtain a slurry containing the dielectric ceramic composition.
- These slurries were formed into a sheet shape on a carrier film made of polyethylene terephthalate to obtain a green sheet containing a dielectric ceramic composition.
- An internal electrode pattern was printed on the obtained green sheet using a conductive paste containing Ni as a conductive material. They were stacked so as to constitute a plurality of capacitances facing each other, and an appropriate number of ceramic green sheets having no internal electrode pattern formed on their upper and lower surfaces were stacked and thermocompression bonded to obtain a raw capacitor body.
- the obtained raw capacitor body was held in the atmosphere at a temperature of 290 ° C. for 3 hours to burn the binder.
- the capacitor body after burning the binder was fired by holding at a temperature of 1150 to 1250 ° C. for 2 hours in a reducing atmosphere to obtain a sintered capacitor body.
- a mixed gas of N 2 —H 2 —H 2 O was used for the reducing atmosphere.
- the oxygen partial pressure PO 2 was set to 10 ⁇ 12 to 10 ⁇ 9 MPa at which Ni contained in the internal electrode was not oxidized at the above temperature.
- a conductive paste containing B 2 O 3 —SiO 2 —BaO-based glass frit was applied to both end faces of the sintered capacitor body, and the temperature was 800 ° C. in an N 2 atmosphere.
- the external electrode electrically connected to the internal electrode was formed by baking.
- a Ni plating layer (first plating layer) was formed on the surface of the external electrode by barrel plating, and an Sn plating layer (second plating layer) was further formed on the Ni plating layer.
- multilayer ceramic capacitors according to samples Nos. 1 to 68 were obtained.
- the outer dimensions of the multilayer ceramic capacitor according to each sample thus obtained were 1.0 mm in width, 2.0 mm in length, and 1.0 mm in thickness. Further, the number of dielectric ceramic layers for obtaining the capacitance was 85, and the counter electrode area per layer was 1.6 mm 2 .
- the capacitor body after removing the external electrode of the multilayer ceramic capacitor according to each obtained sample was dissolved with acid, and ICP emission spectroscopic analysis was performed. There are no particular restrictions on the method of dissolving the capacitor body to obtain a solution.
- the dielectric ceramic layer had substantially the same composition as the preparation composition shown in Tables 1 and 2.
- the kind of element contained in the dielectric ceramic layer of the multilayer ceramic capacitor according to the present invention and the condition of the element amount or the preferable condition of the element amount are defined based on the compositions shown in Tables 1 and 2. It shall be.
- Three multilayer ceramic capacitors related to each sample are held in such a posture that the width (W) direction is along the vertical direction, and the periphery of the sample is hardened with resin, and the length (L) and thickness (T) of the sample are fixed.
- the LT surface defined by (1) was exposed from the resin. Thereafter, the LT surface of each sample was polished by a polishing machine and polished to a depth of about 1 ⁇ 2 of the width (W) direction of each sample. In order to eliminate the extension of the internal electrode due to polishing, the polished surface was processed by ion milling.
- a line (orthogonal line) OL perpendicular to the dielectric ceramic layer 3 was drawn at a position about 1/2 in the L direction of the LT cross section as shown in FIG.
- the region where the dielectric ceramic layer 3 relating to the acquisition of the capacitance was laminated was divided into three equal parts in the thickness (T) direction, and was divided into three regions: an upper region, a central region, and a lower region.
- each dielectric ceramic layer on the orthogonal line OL was measured for 10 layers, and the average value was obtained. That is, since measurement was performed on 10 layers in three regions of three samples, the number of data for obtaining an average value is 90. As a result, in each of samples Nos. 1 to 68, the thickness of the dielectric ceramic layer was 10.0 ⁇ m. The thickness of the dielectric ceramic layer was measured using a scanning electron microscope.
- the capacitance (C) of 20 multilayer ceramic capacitors for each sample was measured using an impedance analyzer (manufactured by Agilent Technologies: HP4194A) at a temperature of 25 ⁇ 2 ° C., a voltage of 1 V rms , and a frequency of 1 kHz. The voltage was applied and measured, and the average value was obtained. ⁇ r of the dielectric ceramic was calculated from the obtained average value of C, the area of the internal electrode, and the thickness of the dielectric ceramic layer obtained above.
- a high temperature load test is performed by applying a DC voltage of 150 V at a temperature of 200 ° C., The change over time in the resistance values was measured.
- the electric field strength applied to the dielectric ceramic layer is 15 kV / mm when calculated from the thickness of the dielectric ceramic layer obtained above and the applied voltage.
- the time when the resistance value became 1 M ⁇ or less was defined as a failure time, and the MTTF of each sample was obtained from the Weibull analysis of the failure time.
- the MTTF is 100 hours or more. It was confirmed that the dielectric ceramic had ⁇ r of 70 or more.
- the MTTF is more excellent in that it is 150 hours or more. It is more preferable because it has reliability and the dielectric ceramic has an ⁇ r of 100 or more.
- the high temperature load reliability and / or ⁇ r are not preferable. It was confirmed that
- the capacitor body after removing the external electrode of the multilayer ceramic capacitor according to each sample is dissolved with an acid, and the known internal electrode
- the element excluding the element contained in the sample was regarded as the result of ICP emission spectroscopic analysis of the solution obtained by dissolving the dielectric ceramic layer.
- the dielectric ceramic layer is separated from the internal electrode by, for example, a method such as peeling the dielectric ceramic layer from the capacitor body, and then dissolved with an acid to perform ICP emission spectroscopic analysis. Also good.
- the present invention is not limited to the above-described embodiment, and various applications within the scope of the present invention relate to the number of dielectric ceramic layers and internal electrodes constituting the capacitor body, the composition of the dielectric ceramic, etc. It is possible to add deformation.
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Abstract
Description
以下に本発明の実施形態を示して、本発明の特徴とするところをさらに詳しく説明する。
積層セラミックコンデンサ1は、コンデンサ本体2を備えている。コンデンサ本体2は、積層される複数の誘電体セラミック層3と、複数の誘電体セラミック層3の間の複数の界面に沿ってそれぞれ形成される複数の内部電極4および5とをもって構成される。
次に、上記の積層セラミックコンデンサ1の製造方法について、製造工程順に説明する。
次に、この発明を実験例に基づいてより具体的に説明する。これらの実験例は、この発明に係る積層セラミックコンデンサの誘電体セラミック層に含まれる元素の量の条件、または元素の量の好ましい条件を規定する根拠を与えるためのものでもある。実験例では、試料として、図1および図2に示すような積層セラミックコンデンサを作製した。
誘電体セラミック層に含まれるペロブスカイト型化合物を構成するBaの素材としてBaCO3、Srの素材としてSrCO3、Reの素材としてLa2O3、CeO2、Pr6O11、Nd2O3およびSm2O3、Tiの素材としてTiO2、およびZrの素材としてZrO2の各粉末を準備した。各粉末は、純度99重量%以上のものを用いた。
これらの誘電体セラミック原料粉末に、ポリビニルブチラール系のバインダー、可塑剤およびエタノールなどの有機溶剤を加え、ボールミルにより湿式混合して、誘電体セラミック組成物を含むスラリーを得た。これらのスラリーを、ポリエチレンテレフタレートからなるキャリアフィルム上にシート状に成形して、誘電体セラミック組成物を含むグリーンシートを得た。
このようにして得られた各試料に係る積層セラミックコンデンサの外形寸法は、幅が1.0mm、長さが2.0mm、および厚さが1.0mmであった。また、静電容量の取得に係る誘電体セラミック層の数は85であり、1層当たりの対向電極面積は1.6mm2であった。
上記のようにして作製した試料番号1~68の試料に係る積層セラミックコンデンサを、各試料で3個ずつ準備した。
上記のようにして作製した試料番号1~68の試料に係る積層セラミックコンデンサを、各試料で20個ずつ準備した。
上記のようにして作製した試料番号1~68の試料に係る積層セラミックコンデンサを、各試料で100個ずつ準備した。
Claims (3)
- 積層された複数の誘電体セラミック層と、前記誘電体セラミック層間の界面に沿って形成された複数の内部電極とをもって構成される、コンデンサ本体と、
前記コンデンサ本体の外表面上の互いに異なる位置に形成され、かつ前記内部電極に電気的に接続される、複数の外部電極と
を備える積層セラミックコンデンサであって、
前記誘電体セラミック層が、元素として、Baと、Re(ただし、ReはLa、Ce、Pr、NdおよびSmの中から選ばれる少なくとも1種類の元素)と、Tiと、Zrと、
M(ただし、MはMg、Al、MnおよびVから選ばれる少なくとも1種類の元素)と、
Siとを含み、Srを任意で含み、かつ、化合物として、Baと、Reと、Tiと、Zrとを含み、Srを任意で含んで構成される、ペロブスカイト型化合物を含み、
前記誘電体セラミック層に含まれる元素の量をモル部で表した場合、Tiの量とZrの量との合計を100としたときに、
Srの量aが0≦a≦20.0、
Reの量bが0.5≦b≦10.0、
Zrの量cが46≦c≦90、
Mの量dが0.5≦d≦10.0、
Siの量eが0.5≦e≦5.0、および、
Baの量とSrの量とReの量との合計の、Tiの量とZrの量との合計に対する比mが0.990≦m≦1.050の各条件を満たす、積層セラミックコンデンサ。 - 前記誘電体セラミック層に含まれる元素の量をモル部で表した場合、Tiの量とZrの量との合計を100としたときに、
Srの量aが0≦a≦20.0、
Reの量bが0.5≦b≦5.0、
Zrの量cが46≦c≦80、
Mの量dが0.5≦d≦5.0、
Siの量eが1.0≦e≦3.0、および、
Baの量とSrの量とReの量との合計の、Tiの量とZrの量との合計に対する比mが0.990≦m≦1.050の各条件を満たす、請求項1に記載の積層セラミックコンデンサ。 - 前記誘電体セラミック層本体に含まれる元素の量をモル部で表した場合、Tiの量とZrの量との合計を100としたときに、
Srの量aが0≦a≦20.0、
Reの量bが1.0≦b≦5.0、
Zrの量cが60≦c≦80、
Mの量dが1.0≦d≦5.0、
Siの量eが1.0≦e≦3.0、および
Baの量とSrの量とReの量との合計の、Tiの量とZrの量との合計に対する比mが1.010≦m≦1.040の各条件を満たす、請求項2に記載の積層セラミックコンデンサ。
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2014
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KR20160013130A (ko) | 2016-02-03 |
US20160071649A1 (en) | 2016-03-10 |
TW201447942A (zh) | 2014-12-16 |
CN105229762A (zh) | 2016-01-06 |
JP6135757B2 (ja) | 2017-05-31 |
US9627135B2 (en) | 2017-04-18 |
CN105229762B (zh) | 2018-11-27 |
KR101800211B1 (ko) | 2017-11-22 |
TWI537998B (zh) | 2016-06-11 |
JPWO2014188845A1 (ja) | 2017-02-23 |
DE112014002548T5 (de) | 2016-03-03 |
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