WO2014185313A1 - プラズマエッチング装置及びプラズマエッチング方法 - Google Patents
プラズマエッチング装置及びプラズマエッチング方法 Download PDFInfo
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- WO2014185313A1 WO2014185313A1 PCT/JP2014/062272 JP2014062272W WO2014185313A1 WO 2014185313 A1 WO2014185313 A1 WO 2014185313A1 JP 2014062272 W JP2014062272 W JP 2014062272W WO 2014185313 A1 WO2014185313 A1 WO 2014185313A1
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- gas
- plasma etching
- processing
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- plasma
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims description 39
- 238000012545 processing Methods 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 18
- 239000007789 gas Substances 0.000 description 211
- 235000012431 wafers Nutrition 0.000 description 52
- 238000009792 diffusion process Methods 0.000 description 21
- 239000003507 refrigerant Substances 0.000 description 16
- 238000005192 partition Methods 0.000 description 15
- 230000002093 peripheral effect Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- -1 fluorocarbon fluorine compound Chemical class 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241000894007 species Species 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- Various aspects and embodiments of the present invention relate to a plasma etching apparatus.
- a plasma etching device that performs etching on a wafer by irradiating the wafer with plasma.
- a gas containing fluorine, chlorine, oxygen, or the like is used as a processing gas to form plasma.
- the plasma contains active species such as charged particles (hereinafter referred to as “ions”) and neutral particles (hereinafter referred to as “radicals”).
- ions charged particles
- radicals neutral particles
- the surface of the wafer reacts with the plasma containing ions and radicals to generate a reaction product, and the reaction product generated volatilizes, whereby etching proceeds.
- the disclosed plasma etching apparatus etches a substrate with a plasma process gas.
- the plasma etching apparatus has a processing container.
- the plasma etching apparatus includes a holding unit that is provided in the processing container and holds the substrate.
- the plasma etching apparatus includes an electrode plate provided in the processing container and facing the holding unit.
- the plasma etching apparatus has n (n is a natural number of 2 or more) concentrically with respect to the radial direction of the substrate for supplying a processing gas to a space between the holding portion and the electrode plate. And a plurality of supply portions for supplying a processing gas from gas supply holes formed at equal intervals in each of the regions.
- the plasma etching apparatus includes a high frequency power source that converts the processing gas supplied to the space by the plurality of supply units into plasma by supplying high frequency power to at least one of the holding unit and the electrode plate.
- the plasma etching apparatus includes a control unit that controls the flow rate of the gas supplied from the gas supply hole in each of the regions according to the following equation.
- Q Total flow rate of processing gas
- Q1 ′ to Qn ′ Process gas flow rates D1 to Dn of each of the n divided areas: Gas concentration ratios N1 to Nn of each of the n divided areas N1 to Nn: Gas of each of the divided areas Supply hole number
- FIG. 1 is a schematic diagram showing an example of the configuration of the plasma etching apparatus according to the first embodiment.
- FIG. 2 is a schematic diagram for explaining an example of the structure of the shower head in the first embodiment.
- FIG. 3A is a schematic diagram showing the Peclet number at a radial position of the wafer in the present embodiment.
- FIG. 3B is a schematic diagram showing the Peclet number at the radial position of the wafer in the present embodiment.
- FIG. 4A is a schematic diagram showing changes in the etch rate when the processing gas supply conditions in the present embodiment are changed.
- FIG. 4B is a schematic diagram showing changes in the etch rate when the processing gas supply conditions in the present embodiment are changed.
- FIG. 4A is a schematic diagram showing changes in the etch rate when the processing gas supply conditions in the present embodiment are changed.
- FIG. 4C is a schematic diagram showing changes in the etch rate when the processing gas supply conditions in the present embodiment are changed.
- FIG. 4D is a schematic diagram showing a change in the etch rate when the process gas supply condition in the present embodiment is changed.
- FIG. 5A is a diagram illustrating a relationship between an area ratio and a gas concentration ratio in the first embodiment.
- FIG. 5B is a diagram illustrating a relationship between an area ratio and a gas concentration ratio in the first embodiment.
- the plasma etching apparatus for etching a substrate with a plasma-ized processing gas according to the first embodiment has a processing container in one example of the embodiment. Further, the plasma etching apparatus has a holding unit that is provided in the processing container and holds the substrate. In addition, the plasma etching apparatus has an electrode plate provided in the processing container and facing the holding unit. Further, the plasma etching apparatus is divided into n (n is a natural number of 2 or more) concentrically with respect to the radial direction of the substrate for supplying a processing gas to a space sandwiched between the holding portion and the electrode plate. And a plurality of supply portions for supplying process gas from gas supply holes formed at equal intervals in each region.
- the plasma etching apparatus has a high frequency power source that converts the processing gas supplied to the space by the plurality of supply units into plasma by supplying high frequency power to at least one of the holding unit and the electrode plate.
- the plasma etching apparatus has a control unit that controls the flow rate of gas supplied from the gas supply holes in each region according to the following equation.
- Q Total flow rate of processing gas
- Q1 ′ to Qn ′ Process gas flow rates D1 to Dn in each of the regions divided into n (n is a natural number of 2 or more): Process gas concentration ratios N1 to Nn in each of the regions divided into n: n Number of gas supply holes in each of the divided areas
- the plasma etching method for etching a substrate with a plasma process gas according to the first embodiment includes a holding step of holding the substrate by a holding unit provided in the processing container. Further, the plasma etching method according to the first embodiment is concentrically formed with respect to the radial direction of the substrate in a space provided between the electrode plate facing the holding unit and the holding unit provided in the processing container. A process gas supply step of supplying a process gas from gas supply holes formed at equal intervals in each area by a plurality of supply sections arranged in each of the divided areas.
- high-frequency power is supplied to at least one of the holding portion and the electrode plate by a high-frequency power source, and the plasma etching method is supplied to the space from the gas supply hole provided in each region.
- a high-frequency power supply step for converting the processing gas into plasma is supplied to the space from the gas supply hole provided in each region.
- the process gas supply step controls the flow rate of the gas supplied from the gas supply hole in each region according to the following equation.
- Q Total flow rate of processing gas
- Q1 ′ to Qn ′ Process gas flow rates D1 to Dn in each of the regions divided into n (n is a natural number of 2 or more): Process gas concentration ratios N1 to Nn in each of the regions divided into n: n Number of gas supply holes in each of the divided areas
- FIG. 1 is a schematic diagram showing an example of the configuration of the plasma etching apparatus according to the first embodiment.
- the plasma etching apparatus 100 according to the first embodiment is, for example, a parallel plate type plasma etching apparatus.
- the plasma etching apparatus 100 has a chamber (processing vessel) 102 formed into a cylindrical shape made of aluminum whose surface is anodized (anodized), for example.
- the chamber 102 is grounded.
- a substantially cylindrical susceptor support 104 is provided at the bottom of the chamber 102 via an insulating plate 103 such as ceramic. Further, a susceptor 105 constituting a lower electrode is provided on the susceptor support 104. A high pass filter (HPF) 105 a is connected to the susceptor 105.
- HPF high pass filter
- the upper center portion of the susceptor 105 is formed in a convex disk shape, and an electrostatic chuck 111 having substantially the same shape as a wafer W which is an example of an object to be processed is provided thereon.
- the electrostatic chuck 111 has a configuration in which an electrostatic electrode 112 is interposed between insulating materials.
- the electrostatic chuck 111 is made of a disk-shaped ceramic member, and a DC power source 113 is connected to the electrostatic electrode 112.
- a first high-frequency power source 114 and a second high-frequency power source 116 are connected to the susceptor 105 via a first matching unit 115 and a second matching unit 117, respectively.
- the first high frequency power supply 114 applies bias power, which is high frequency power of a relatively low frequency, for example, 13.6 MHz, to the susceptor 105.
- the second high frequency power supply 116 applies a plasma generation power that is a relatively high frequency, for example, a high frequency power of 40 MHz, to the susceptor 105.
- the susceptor 105 applies plasma generation power to the inside of the chamber 102.
- the insulating plate 103, the susceptor support 104, the susceptor 105, and the electrostatic chuck 111 are formed with gas passages 118 for supplying a heat transfer medium (for example, a backside gas such as He gas) to the back surface of the wafer W. Yes. Heat is transferred between the susceptor 105 and the wafer W through the heat transfer medium, and the wafer W is maintained at a predetermined temperature.
- a heat transfer medium for example, a backside gas such as He gas
- An annular focus ring 119 is disposed at the upper peripheral edge of the susceptor 105 so as to surround the wafer W supported on the electrostatic chuck 111.
- the focus ring 119 is made of a dielectric material such as ceramic or quartz, or a conductor, for example, a conductive material such as single crystal silicon that is the same as the material constituting the wafer W.
- the plasma density on the outer periphery side of the wafer W can be maintained at the same level as the plasma density on the center side of the wafer W by expanding the plasma distribution area to the focus ring 119. Thereby, the uniformity of the plasma etching in the surface of the wafer W can be improved.
- An upper electrode 120 is provided above the susceptor 105 so as to face the susceptor 105 in parallel.
- a DC power source 123 is connected to the upper electrode 120.
- a low pass filter (LPF) 124 is connected to the upper electrode 120.
- the upper electrode 120 is configured to be driven by the upper electrode driving unit 200 in the vertical direction, for example.
- the distance (hereinafter referred to as “gap”) G between the upper electrode 120 and the susceptor 105 can be adjusted.
- the gap G is a parameter that greatly affects the diffusion and flow of the processing gas. Therefore, by adopting a structure in which the gap G can be adjusted, the plasma distribution between the upper electrode 120 inside the chamber 102 and the susceptor 105 can be controlled, as will be described later.
- the amount of movement along the vertical direction of the upper electrode 120 driven by the upper electrode driving unit 200 is not particularly limited.
- the moving amount along the vertical direction of the upper electrode 120 can be set to 70 mm, and the gap G can be adjusted to 20 mm or more and 90 mm or less.
- the plasma etching apparatus 100 may be configured such that the configuration shown in FIG. 1 is rotated by 90 ° and tilted sideways, or may be configured upside down.
- the upper electrode 120 is supported on the upper inner wall of the chamber 102 via a bellows 122.
- the bellows 122 is attached to the upper inner wall of the chamber 102 by a fixing means such as a bolt via an annular upper flange 122a, and is attached to the upper surface of the upper electrode 120 by a fixing means such as a bolt via an annular upper flange 122b.
- the configuration of the upper electrode driving unit 200 for adjusting the gap G will be described in detail.
- the upper electrode driving unit 200 includes a substantially cylindrical support member 204 that supports the upper electrode 120.
- the support member 204 is attached to the upper center of the upper electrode 120 with a bolt or the like.
- the support member 204 is disposed so as to be able to enter and exit through a hole 102 a formed in the approximate center of the upper wall of the chamber 102. Specifically, the outer peripheral surface of the support member 204 is supported inside the hole 102 a of the chamber 102 via the slide mechanism 210.
- the slide mechanism 210 is, for example, supported by a guide member 216 fixed to a vertical portion of the fixing member 214 via a fixing member 214 having an L-shaped cross section at the upper portion of the chamber 102, and slidably supported by the guide member 216. And a rail portion 212 formed in one direction (vertical direction in the present embodiment) on the outer peripheral surface of the member 204.
- the fixing member 214 that fixes the guide member 216 of the slide mechanism 210 has its horizontal portion fixed to the upper portion of the chamber 102 via an annular horizontal adjustment plate 218. With the horizontal adjustment plate 218, the horizontal position of the upper electrode 120 is adjusted.
- the horizontal adjustment plate 218 is fixed to the chamber 102 by, for example, a plurality of bolts arranged at equal intervals in the circumferential direction of the horizontal adjustment plate 218. Moreover, the structure which can be adjusted with the protrusion amount of these volt
- the horizontal adjustment plate 218 adjusts the inclination with respect to the horizontal direction, and the guide member 216 of the slide mechanism 210 adjusts the inclination with respect to the vertical direction, whereby the inclination of the upper electrode 120 in the horizontal direction can be adjusted. That is, the upper electrode 120 can always be kept in a horizontal position.
- a pneumatic cylinder 220 for driving the upper electrode 120 is attached to the upper side of the chamber 102 via a cylindrical body 201. That is, the lower end of the cylinder 201 is airtightly attached with a bolt or the like so as to cover the hole 102 a of the chamber 102, and the upper end of the cylinder 201 is airtightly attached to the lower end of the pneumatic cylinder 220.
- the pneumatic cylinder 220 has a rod 202 that can be driven in one direction.
- a lower end of the rod 202 is connected to a substantially upper center of the support member 204 with a bolt or the like.
- the upper electrode 120 is driven along the slide mechanism 210 by the support member 204.
- the rod 202 is configured, for example, in a cylindrical shape, and the internal space of the rod 202 communicates with a central hole formed in the approximate center of the support member 204 so as to be released into the atmosphere.
- the wiring grounded via the upper electrode 120 and the low-pass filter (LPF) 124 and the power supply line for applying a DC voltage from the DC power source 123 to the upper electrode 120 are supplied from the internal space of the rod 202 to the support member 204. Wiring can be made so as to connect to the upper electrode 120 through the central hole.
- LPF low-pass filter
- a position detecting means for detecting the position of the upper electrode 120 such as a linear encoder 205 is provided on the side of the pneumatic cylinder 220.
- a position detecting means for detecting the position of the upper electrode 120 such as a linear encoder 205 is provided on the side of the pneumatic cylinder 220.
- an upper end member 207 having an extending portion 207a extending laterally from the rod 202 is provided at the upper end of the rod 202.
- the extended portion 207a of the upper end member 207 is in contact with the detecting portion 205a of the linear encoder 205. Since the upper end member 207 is interlocked with the movement of the upper electrode 120, the position of the upper electrode 120 can be detected by the linear encoder 205.
- the pneumatic cylinder 220 includes a cylindrical cylinder body 222, an upper support plate 224 and a lower support plate 226.
- the cylindrical cylinder body 222 is sandwiched between an upper support plate 224 and a lower support plate 226.
- An annular partition member 208 that partitions the pneumatic cylinder 220 into an upper space 232 and a lower space 234 is provided on the outer peripheral surface of the rod 202.
- Compressed air is introduced into the upper space 232 of the pneumatic cylinder 220 from the upper port 236 of the upper support plate 224. Further, compressed air is introduced into the lower space 234 of the pneumatic cylinder 220 from the lower port 238 of the lower support plate 226.
- the rod 202 can be driven and controlled in one direction (for example, the vertical direction).
- the amount of air introduced into the pneumatic cylinder 220 is controlled by a pneumatic circuit 300 provided in the vicinity of the pneumatic cylinder 220.
- the upper electrode driving unit 200 has a control unit 290, and the control unit 290 is connected to the device control unit 190. A control signal from the apparatus control unit 190 is transmitted to the control unit 290, and each unit of the upper electrode driving unit 200 is driven and controlled by the control unit 290.
- the temperature distribution adjusting unit 106 includes heaters 106a and 106b, heater power sources 106c and 106d, thermometers 106e and 106f, and refrigerant flow paths 107a and 107b.
- a center heater 106a and an outer heater 106b are provided from the center side toward the outer periphery side.
- a center heater power source 106c is connected to the center side heater 106a
- an outer periphery side heater power source 106d is connected to the outer periphery side heater 106b.
- the center side heater power supply 106c and the outer periphery side heater power supply 106d can independently adjust the power supplied to the center side heater 106a and the outer periphery side heater 106b, respectively. Thereby, temperature distribution along the radial direction of the wafer W can be generated on the susceptor support 104 and the susceptor 105. That is, the temperature distribution along the radial direction of the wafer W can be adjusted.
- a center side thermometer 106e and an outer side thermometer 106f are provided from the center side toward the outer periphery side.
- the center side thermometer 106e and the outer periphery side thermometer 106f measure the temperatures of the center side and the outer periphery side of the susceptor support base 104, respectively, and thereby can derive the temperatures of the center side and the outer periphery side of the wafer W.
- the temperatures measured by the center-side thermometer 106e and the outer peripheral-side thermometer 106f are sent to the device control unit 190 described later.
- the apparatus control unit 190 adjusts the outputs of the central heater power supply 106c and the outer peripheral heater power supply 106d so that the temperature of the wafer W derived from the measured temperature becomes the target temperature.
- a center-side refrigerant channel 107a and an outer-side refrigerant channel 107b may be provided from the center side toward the outer periphery side. Then, for example, cooling water and a fluorocarbon refrigerant having different temperatures may be circulated.
- the refrigerant is introduced into the center-side refrigerant flow path 107a through the center-side introduction pipe 108a and discharged from the center-side discharge pipe 109a.
- the refrigerant is introduced into the outer peripheral side refrigerant flow path 107b through the outer peripheral side introduction pipe 108b and discharged from the outer peripheral side discharge pipe 109b.
- the temperature of the susceptor 105 is adjusted by heating by the heaters 106a and 106b and cooling from the refrigerant. Therefore, the wafer W is adjusted to have a predetermined temperature by the amount of heat generated by radiation from plasma or irradiation of ions contained in the plasma, and the transfer of heat with the susceptor 105 described above.
- the susceptor support 104 includes a center heater 106a (and a center refrigerant passage 107a) and an outer heater 106b (and an outer refrigerant passage 107b). Therefore, the temperature of the wafer W can be adjusted independently at the center side and the outer peripheral side.
- a heat insulating material is used as a heat insulating layer between the center heater 106a and the outer heater 106b or between the center refrigerant channel 107a and the outer refrigerant channel 107b.
- a space may be provided.
- An exhaust pipe 131 is connected to the bottom of the chamber 102, and an exhaust device 135 is connected to the exhaust pipe 131.
- the exhaust device 135 includes a vacuum pump such as a turbo molecular pump, and adjusts the inside of the chamber 102 to a predetermined reduced pressure atmosphere (for example, 0.67 Pa or less).
- a gate valve 132 is provided on the side wall of the chamber 102. By opening the gate valve 132, the wafer W can be loaded into the chamber 102 and the wafer W can be unloaded from the chamber 102. For example, a transfer arm is used to transfer the wafer W.
- the plasma etching apparatus 100 includes a gas supply condition adjustment unit 130 for adjusting the supply condition of the plasma gas supplied to the wafer W supported by the susceptor 105.
- the gas supply condition adjustment unit 130 includes a shower head 140 configured integrally with the upper electrode 120 and a gas supply device 150.
- the shower head 140 ejects a predetermined processing gas (may be a mixed gas) onto the wafer W supported by the susceptor 105.
- the shower head 140 includes a circular electrode plate 141 (upper electrode 120) having a large number of gas supply holes 141a, and an electrode support 142 that detachably supports the upper surface side of the electrode plate 141.
- the electrode support 142 is formed in a disk shape having the same diameter as the electrode plate 141, and a circular buffer chamber 143 is formed therein.
- the electrode plate 141 is provided with a gas supply hole for supplying a gas such as a processing gas to the wafer W (hereinafter sometimes referred to as a gas supply hole 141).
- FIG. 2 is a schematic diagram for explaining an example of the structure of the shower head in the first embodiment.
- one or more annular partition members 145 made of an O-ring are provided in the buffer chamber 143.
- the one or more annular partition members 145 are disposed at different positions with respect to the radial direction of the shower head.
- the annular partition member 145 is indicated by a first annular partition member 145a, a second annular partition member 145b, and a third annular partition member 145c from the center side with respect to the radial direction of the shower head. .
- the buffer chamber 143 is divided into a first buffer chamber 143a, a second buffer chamber 143b, a third buffer chamber 143c, and a fourth buffer chamber 143d from the center side.
- the buffer chamber 143 is divided into a plurality of regions.
- the number of the annular partition members 145 is not particularly limited as long as it is one or more, but may be three as shown in FIG. 2, two, or four or more, for example.
- the number of the annular partition members 145 is three from the viewpoint of achieving both easy control of the processing gas and in-plane uniformity of etching by the plasma etching method described later. (That is, it has a buffer chamber divided into four parts). Note that by arranging n annular partition members 145, it is possible to install N + 1 buffer chambers.
- a predetermined processing gas is supplied to each of the buffer chambers 143a, 143b, 143c, and 143d by the gas supply device 150.
- one or more gas supply holes 141 communicate with the lower surfaces of the buffer chambers 143a, 143b, 143c, and 143d, and a predetermined processing gas is supplied onto the wafer W through the gas supply holes 141. Can be erupted. Regarding the arrangement and number of the gas supply holes 141, it is preferable that the processing gas is uniformly ejected with respect to the wafer W.
- the gas supply holes 141 are formed at equal intervals in each region divided by the annular partition member 145.
- the gas supply holes 141 are provided so that the number of the gas supply holes 141 per area is equal.
- the gas supply device 150 includes a gas supply source 161 that supplies a processing gas in which one or a plurality of gases are mixed, and flow rate control units (MFCs, mass flow controllers) 174a to 174d. Also, one pipe extending from the gas supply source 161 is branched and connected to the flow rate control units 174a to 174d. Further, the branched pipes are provided with valves 175a to 175d for closing and opening the pipes between the gas supply source 161 and the flow rate control units 174a to 174d, respectively. Further, each of the flow rate control units 174a to 174d is connected to one of the four buffer chambers. Valves 176a to 176d are provided in the pipes connecting the flow rate control units 174a to 174d and the four buffer chambers.
- MFCs mass flow controllers
- the processing gas supplied from the gas supply source 161 is controlled in flow rate by any one of the flow rate control units 174a to 174d, and is then supplied to the four buffer chambers via any one of the pipes 171 to 174. Supplied to either. Thereafter, the processing gas supplied to the buffer chamber is ejected from a gas supply hole 141 provided in the buffer chamber.
- a fluorocarbon-based fluorine compound CF-based
- Ar gas Ar gas
- N 2 gas N 2 gas
- He gas He gas
- the processing gas is not limited to this, and any processing gas may be used.
- the operation by the flow rate control units 174a to 174d is controlled by, for example, an apparatus control unit 190 described later of the plasma etching apparatus 100.
- the apparatus control unit 190 of the plasma etching apparatus 100 includes an arithmetic processing unit (not shown) made of, for example, a CPU and a recording medium (not shown) made of, for example, a hard disk.
- the device control unit 190 controls the operations of the first high-frequency power source 114, the second high-frequency power source 116, the temperature distribution adjusting unit 106, the upper electrode driving unit 200, and the gas supply condition adjusting unit 130 described above.
- the device control unit 190 operates each of the above-described units, for example, the CPU of the device control unit 190, for example, according to a program corresponding to each etching process recorded in the hard disk of the device control unit 190, Control each part.
- Plasma etching method An example of a plasma etching method using the plasma etching apparatus 100 will be described.
- the concentration distribution of gas components (for example, radicals) transported by “diffusion” and “flow” differs depending on which of “diffusion” and “flow” factors depending on the position of the gas supply hole.
- the Peclet number (Pe) is known as a dimensionless number that qualitatively indicates how much it depends on which factor of “diffusion” or “flow”.
- the Peclet number is represented by the following formula (2) using the gas flow velocity u (m / s), the mutual diffusion coefficient DAB (m2 / s) of the gas species, and the representative length L (m).
- the gas transport is considered to be “diffusion”, and if Pe is greater than 1 (or 1), the gas transport is “flow”. Is said to be dominant.
- FIG. 3A shows the Peclet number at the radial position of the wafer in this embodiment.
- FIG. 3A shows a case where a mixed gas of Ar and C4F8 (the mutual diffusion coefficient DAB is 1.23 ⁇ 10 ⁇ 1 m 2 / s) is used as a gas species, and the representative length L (ie, the susceptor 105 and the upper electrode 120).
- the gap G) was set to 0.03 m, and the gas flow rate u was calculated by calculation to obtain the Peclet number.
- the horizontal axis in FIG. 3A indicates the Peclet number in the radial direction with the center of the wafer having a diameter of 300 mm being set to 0 mm.
- FIG. 3A shows that “diffusion” is dominant and “flow” is dominant, with the diameter of 86 mm from the wafer center as a boundary.
- FIG. 3B shows the etch rate ratio with respect to the wafer position when a wafer having a diameter of 300 mm is used.
- the buffer chamber is divided into four zones (Center, Middle, Edge, Verry Edge) by three annular partition members, and gas is ejected from each zone.
- the plasma etching was performed to obtain the etch rate ratio with respect to the wafer position.
- the gas supply holes corresponding to the center zone four gas supply holes are arranged on the circumference of 11 mm from the center of the shower head, and twelve gas supply holes are arranged on the circumference of 33 mm.
- gas supply holes were arranged on a circumference of 55 mm from the center of the shower head, and 36 gas supply holes were arranged on a circumference of 77 mm.
- 48 gas supply holes were arranged on a circumference of 99 mm from the center of the shower head, and 60 gas supply holes were arranged on a circumference of 121 mm.
- 80 gas supply holes were arranged on a circumference of 143 mm from the center of the shower head, and 100 gas supply holes were arranged on a circumference of 165 mm.
- the description regarding the supply of gas from Center, Middle, Edge, and Very Edge refers to the arrangement of the gas supply holes described above.
- FIG. 3B shows the normalized position with the position having the highest etch rate as 1.
- FIG. 3B shows that when the gas is supplied from the center and middle zones, the etch rate generally increases at a position corresponding to the position where the gas is supplied. This is because “diffusion” is dominant in the transport of gas in the Center and Middle zones (see FIG. 3A). Further, it is presumed that the gas supplied from the Center and Middle zones also affects the etch rate of the Edge and Very Edge zones.
- the diffusion of the supply gas depends on the mean free path l (m) of the diffusing molecules (gas molecules) and the gas flow velocity u (m / s).
- the mean free path l of the diffusing molecule is expressed by the following formula (3) when it is assumed that the gas is an ideal gas and the velocity of the diffusing molecule follows the mask well distribution.
- C1 is a constant
- d is the collision molecular diameter (m) of the diffusing molecule
- P is the pressure (atm) in the system
- T is the temperature (K) in the system.
- the flow velocity u of the supply gas is also expressed by the following formula (4) when it is assumed that the gas is an ideal gas.
- C2 is a constant
- Q is a flow rate at 1 atm (m3 / s)
- P is a pressure in the system
- V is a volume (m3) in the system.
- Expression (5) is derived from Expression (3) and Expression (4).
- C3 is a constant.
- the diffusion region of the supply gas depends on the volume in the system, the flow rate of the supply gas, the temperature in the system, and the collision molecular diameter.
- the volume in the system is approximated to the volume of the space between the upper electrode 120 and the susceptor 105 in this embodiment, but the diameter of the object to be processed does not change during plasma etching.
- the distance of the space (gap G) between the electrode 120 and the susceptor 105 is indicated.
- the flow rate of the supply gas is also correlated with the pressure in the system.
- the collision molecular diameter varies depending on the type of supply gas (that is, the molecular weight of the supply gas)
- the diffusion region of the supply gas also depends on the molecular weight of the supply gas.
- FIG. 4A to FIG. 4D are shown for experiments in which the diffusion region of the supply gas is confirmed to depend on parameters (supply conditions) such as the supply gas flow rate (and supply gas pressure), the supply gas molecular weight, and the gap G.
- supply conditions such as the supply gas flow rate (and supply gas pressure), the supply gas molecular weight, and the gap G. The description will be given with reference.
- 4A to 4D are schematic diagrams showing changes in the etch rate when the process gas supply conditions in the present embodiment are changed.
- the buffer chamber is divided into four zones (Center, Middle, Edge, and Very Edge) by three annular partition members, and the partial pressure of gas supplied from each gas supply hole (see etching conditions described later) To be constant.
- the partial pressure of gas supplied from each gas supply hole see etching conditions described later
- an additional gas in an amount indicated by the following etching conditions is supplied, The etch rate was plotted.
- 4A to 4D indicate the silicon oxide etch rate in a BEOL (Back End of Line) trench pattern of a target object in which silicon oxide is deposited as a hard mask on a silicon wafer. ing.
- the vertical axis in FIG. 4B is normalized and shown with 1 being the position with the highest etch rate (outermost circumference).
- radical control that is, gas concentration distribution is important in controlling etching uniformity.
- the plasma etching apparatus supplies gas from a region divided into n (n is a natural number of 2 or more), and the distribution ratio of the gas supplied from each region to the reaction chamber is correlated with the gas concentration. Preference is given to using high parameters.
- the plasma etching apparatus 100 according to the first embodiment obtains desired etching characteristics by controlling the flow rate of the gas supplied to the reaction chamber.
- the number of the gas supply holes 141 and the area of the region are correlated. That is, if the area ratio of the divided regions is determined, the number of gas supply holes 141 formed in the region can be replaced. Based on this, the plasma etching apparatus 100 controls the flow rate of gas supplied from each region to the reaction chamber based on the number of gas supply holes 141 in each region.
- the plasma etching apparatus 100 includes a control unit that controls the flow rate of the gas supplied from the gas supply hole in each region according to the equation (1).
- Q Total flow rate of processing gas
- Q1 to Qn Process gas flow rates D1 to Dn in each of the divided areas (n is a natural number of 2 or more)
- D1 to Dn Process gas concentration ratios N1 to Nn in each of the divided areas are divided into n Number of gas supply holes in each region
- control unit of the plasma etching apparatus transmits the gas flow rate ratio of “Q1 / Q” to “Qn / Q” to the flow rate control unit 174 corresponding to each of n regions, for example, The flow rate of the processing gas supplied from each to the reaction chamber is controlled.
- control unit of the plasma etching apparatus converts the above equation (1) into the following equation (6) and then supplies the gas from the gas supply holes in each region.
- the gas flow rate will be controlled.
- FIGS. 5A and 5B are diagrams showing the relationship between the area ratio and the gas concentration ratio in the first embodiment.
- FIGS. 5A and 5B for convenience of explanation, a case where there are a region A and a region B is illustrated as an example.
- the area ratio between the region A and the region B is “1: 2”
- the area ratio between the region A and the region B is “1: 1”.
- a description will be given using a case.
- the gas concentration ratio D of the region A and the region B is equal in the equation (1)
- the gas flow rate ratio is obtained by the number of gas supply holes.
- the flow rate in the region A is “150 sccm”, and the flow rate in the region B is “150 sccm”.
- the case where the gas concentration ratio in the region A and the region B is 2: 1 will be described as an example.
- the flow rate in the region A is “150 sccm” and the flow rate in the region B is “150 sccm”.
- the flow rate in the region A is “200 sccm”
- the flow rate in the region B is “100 sccm”.
- the flow rate is determined by determining the flow rate ratio of the processing gas so as to obtain a desired processing gas concentration ratio based on the equation (1). This makes it possible to easily adjust the relationship between the etching rates in each region even if the region setting (for example, the area ratio) in the shower head is changed.
- desired etching characteristics can be obtained by controlling the gas flow rate ratio so that each region has a desired gas concentration ratio. Is possible.
- the present invention is not limited to the specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Can be modified or changed.
- the present invention is not limited to the concentric circle but can be similarly applied to a polygon such as a square.
- the to-be-processed object which can be etched with the plasma etching apparatus of this invention is not specifically limited.
- a wafer made of a silicon substrate, on which a silicon dioxide (SiO2) film, a film to be etched made of a polysilicon film, a mask layer made of one or more layers, an antireflection film ( Bottom Anti-Reflective Coating (BARC) or a film on which a photoresist film is formed can be used.
- the resist film is previously exposed and developed to form a predetermined pattern.
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Abstract
Description
Q1’~Qn’:n個に分割された領域各々の処理ガス流量
D1~Dn:n個に分割された領域各々における処理ガスの濃度比
N1~Nn:n個に分割された領域各々のガス供給孔数
第1の実施形態に係るプラズマ化された処理ガスにより基板をエッチングするプラズマエッチング装置は、実施形態の一例において、処理容器を有する。また、プラズマエッチング装置は、処理容器内に設けられた、基板を保持する保持部を有する。また、プラズマエッチング装置は、処理容器内に設けられた、保持部と対向する電極板を有する。また、プラズマエッチング装置は、保持部と電極板とに挟まれた空間に処理ガスを供給するための、基板の径方向に対して同心円状にn(nは2以上の自然数)個に分割された領域各々に配置され、領域各々に均等間隔で形成されたガス供給孔から処理ガスを供給する複数の供給部を有する。また、プラズマエッチング装置は、保持部又は電極板の少なくとも一方に高周波電力を供給することによって、複数の供給部により空間に供給された処理ガスをプラズマ化する高周波電源を有する。また、プラズマエッチング装置は、以下の式により、領域各々のガス供給孔から供給されるガス流量を制御する制御部を有する。
Q1’~Qn’:n個(nは2以上の自然数)に分割された領域各々の処理ガス流量
D1~Dn:n個に分割された領域各々における処理ガスの濃度比
N1~Nn:n個に分割された領域各々のガス供給孔数
Q1’~Qn’:n個(nは2以上の自然数)に分割された領域各々の処理ガス流量
D1~Dn:n個に分割された領域各々における処理ガスの濃度比
N1~Nn:n個に分割された領域各々のガス供給孔数
図1は、第1の実施形態に係るプラズマエッチング装置の構成の一例を示す概略図である。第1の実施形態に係るプラズマエッチング装置100は、例えば、平行平板型のプラズマエッチング装置である。
プラズマエッチング装置100を用いた、プラズマエッチング方法の例について説明する。
ギャップG:30mm(ギャップ変更時:22mm~50mm)
高周波電源パワー(40MHz/13MHz):700/1000W
上部電極の電位 :0V
処理ガスの流量(全圧換算) :C4F8/Ar/N2/O2=30/1200/70/17sccm(ただし、最外周領域には、C4F8(分子量変更時には、O2又はCH2F2)=20sccmを添加し、流量変更時は、上記流量×0.33~×1.5の範囲で行った。
処理時間 :60秒
図4A~図4Dのエッチレートのプロットより、各々のパラメータが、供給ガスの拡散に対してどのような影響を及ぼすかがわかる。すなわち、供給ガスの流量を低くする、供給ガスの分子量を小さくする、系内圧力を大きくする、ギャップGを広くすることにより、供給ガスの拡散が広くなることがわかる。すなわち、これらのパラメータを制御することにより、ガス(すなわち、ラジカル)の濃度分布を制御することができるため、プラズマエッチング時におけるウェハの面内形状について、面内均一性を向上できることがわかった。
Q1~Qn:n個(nは2以上の自然数)に分割された領域各々の処理ガス流量
D1~Dn:n個に分割された領域各々における処理ガスの濃度比
N1~Nn:n個に分割された領域各々のガス供給孔数
100 プラズマエッチング装置
105 サセプタ(支持部)
106 温度分布調節部
120 上部電極(電極)
122 ベローズ
130 ガス供給条件調節部
140 シャワーヘッド
141 ガス供給孔
143 バッファ室
145 環状隔壁部材
150 ガス供給装置
174 流量制御部
190 装置制御部
200 上部電極駆動部(間隔調節部)
Claims (2)
- プラズマ化された処理ガスにより基板をエッチングするプラズマエッチング装置において、
処理容器と、
前記処理容器内に設けられた、基板を保持する保持部と、
前記処理容器内に設けられた、前記保持部と対向する電極板と、
前記保持部と前記電極板とに挟まれた空間に処理ガスを供給するための、前記基板の径方向に対して同心円状にn(nは2以上の自然数)個に分割された領域各々に配置され、前記領域各々に均等間隔で形成されたガス供給孔から処理ガスを供給する複数の供給部と、
前記保持部又は前記電極板の少なくとも一方に高周波電力を供給することによって、前記複数の供給部により前記空間に供給された処理ガスをプラズマ化する高周波電源と、
以下の式により、前記領域各々の前記ガス供給孔から供給されるガス流量を制御する制御部と
を有することを特徴とするプラズマエッチング装置。
Q1’~Qn’:n個に分割された領域各々の処理ガス流量
D1~Dn:n個に分割された領域各々における処理ガスの濃度比
N1~Nn:n個に分割された領域各々のガス供給孔数 - プラズマ化された処理ガスにより基板をエッチングするプラズマエッチング方法において、
処理容器内に設けられた保持部により基板を保持する保持ステップと、
前記処理容器内に設けられた、前記保持部と対向する電極板と前記保持部とに挟まれた空間に、前記基板の径方向に対して同心円状にn(nは2以上の自然数)個に分割された領域各々に配置された複数の供給部により、前記領域各々に均等間隔で形成されたガス供給孔から処理ガスを供給する処理ガス供給ステップと、
前記保持部又は前記電極板の少なくとも一方に、高周波電源により高周波電力を供給することによって、前記領域各々に設けられた前記ガス供給孔から前記空間に供給された処理ガスをプラズマ化する高周波電力供給ステップと、
を有し、
前記処理ガス供給ステップは、
以下の式により、前記領域各々の前記ガス供給孔から供給されるガス流量を制御するプラズマエッチング方法。
Q1’~Qn’:n個に分割された領域各々の処理ガス流量
D1~Dn:n個に分割された領域各々における処理ガスの濃度比
N1~Nn:n個に分割された領域各々のガス供給孔数
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TW201507026A (zh) | 2015-02-16 |
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US9583315B2 (en) | 2017-02-28 |
US20160056021A1 (en) | 2016-02-25 |
KR102155395B1 (ko) | 2020-09-11 |
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JP6030994B2 (ja) | 2016-11-24 |
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