WO2014156601A1 - Cible de pulvérisation igzo et film igzo - Google Patents

Cible de pulvérisation igzo et film igzo Download PDF

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WO2014156601A1
WO2014156601A1 PCT/JP2014/056250 JP2014056250W WO2014156601A1 WO 2014156601 A1 WO2014156601 A1 WO 2014156601A1 JP 2014056250 W JP2014056250 W JP 2014056250W WO 2014156601 A1 WO2014156601 A1 WO 2014156601A1
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Prior art keywords
phase
raw material
powder
sputtering
zno
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PCT/JP2014/056250
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English (en)
Japanese (ja)
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幸三 長田
浩二 角田
敏也 栗原
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Jx日鉱日石金属株式会社
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Priority to JP2015508253A priority Critical patent/JP5883990B2/ja
Priority to KR1020157001570A priority patent/KR20150023832A/ko
Priority to CN201480002040.8A priority patent/CN105308208A/zh
Priority to KR1020177004745A priority patent/KR101973873B1/ko
Publication of WO2014156601A1 publication Critical patent/WO2014156601A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
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Definitions

  • the present invention relates to an IGZO target suitable for use in manufacturing a transparent semiconductor IGZO film used for an active layer of a thin film transistor in a liquid crystal display device or an organic EL display device by a sputtering method, and sputtering the target.
  • the IGZO film obtained by doing this.
  • Thin film transistors using an active layer made of a silicon-based material for driving each pixel are used in display elements such as active matrix liquid crystal display devices.
  • the aperture ratio is increased due to the increase in the area occupied by transistors as pixels become smaller.
  • a thin film transistor using a transparent oxide semiconductor has been developed due to a decrease in the number of films and a need for high-temperature film formation.
  • Transparent oxide semiconductors are attracting attention from the viewpoint of being able to form a uniform film over a large area by a sputtering method, and having high mobility.
  • In—Ga—Zn—O containing indium, gallium, zinc, and oxygen as constituent elements.
  • the mobility of an amorphous IGZO film made of a base material (hereinafter referred to as “IGZO”) is higher than that of amorphous silicon, and a field effect transistor using the amorphous IGZO film as an active layer is turned on / off. Since it has characteristics such as a large ratio and a low off-state current value, it is considered promising (see Non-Patent Document 1 and Patent Document 1).
  • a sputtering method that is excellent in mass productivity is the most appropriate.
  • the IGZO target needs to have a high density.
  • Patent Document 2 describes a method for producing an indium oxide-based sputtering target using indium oxide powder having a chlorine concentration of 50 mass ppm or less. However, only the effect of the chlorine concentration contained in the indium oxide powder is disclosed in the specification. Patent Document 3 has a description relating to an indium oxide powder having a low halogen element content. However, in the examples, only indium nitrate is used as a raw material.
  • Patent Document 4 discloses that "an oxide including an indium element (In), a gallium element (Ga, and a zinc element (Zn), and an oxide crystal phase represented by (Ga, In) 2 O 3" .
  • the oxide (the oxide crystal phase represented by Ga, In 2 O 3 is 50% by mass or more with respect to the entire crystal phase contained in the oxide.
  • Indium element (In), gallium element ( The oxide is described in which the atomic ratio of each element with respect to the sum of Ga) and zinc element (Zn) (In + Ga + Zn) satisfies the relationships of the following formulas (1) to (3).
  • 0.05 ⁇ Zn / (In + Ga + Zn) ⁇ 0.9 (3) 0.05 ⁇ Zn / (In + Ga + Zn) ⁇ 0.9 (3)
  • Patent Document 5 discloses that “a sputtering target containing oxide A shown below and indium oxide (In 2 O 3 ) having a Bix (registered trademark) byte type crystal structure.
  • Oxide A Indium It contains an element (In), a gallium element (Ga), and a zinc element (Zn).
  • the incident angle (2 ⁇ ) is 7.0 ° to 8.4 °, 30.6 by X-ray diffraction measurement (Cuk ⁇ ray).
  • the component composition of a wide range of target is described, there is a problem that the effect of suppressing abnormal discharge is small because the crystal structure (phase) of the target is not sufficiently adjusted.
  • the present invention has been made by paying attention to such a situation, and an object thereof is to provide a high-density IGZO target as a sputtering target necessary for forming a transparent semiconductor IGZO film by sputtering. Further, it is an object to provide an IGZO target technology capable of reducing the bulk resistance of a sputtering target, keeping the carrier concentration and mobility of the sputtered film within a certain range, minimizing arcing, and performing DC sputtering. And
  • An IGZO sintered sputtering target composed of indium (In), gallium (Ga), zinc (Zn), and oxygen (O), and In, Ga, and Zn are 0.575 ⁇ In / (In + Ga) ⁇ 0 500, and a composition range of Zn / (In + Ga + Zn) ⁇ 0.333, and a single phase structure composed of (In x Ga (1-x) ) 2 ZnO 4 (1>x> 0) phase.
  • a sputtering target comprising: 2) An IGZO sintered sputtering target composed of indium (In), gallium (Ga), zinc (Zn), and oxygen (O), and In, Ga, and Zn are 0.575 ⁇ In / (In + Ga) ⁇ 0 .500 and a composition range of Zn / (In + Ga + Zn) ⁇ 0.333, and is composed of an (In x Ga (1-x) ) 2 ZnO 4 (1>x> 0) phase and an In 2 O 3 phase.
  • a sputtering target having a structure of a two-phase structure and having a maximum diameter of the In 2 O 3 phase of 10 ⁇ m or less.
  • a high-density IGZO oxide sintered body used as a sputtering target for producing a transparent semiconductor IGZO film can provide a high-density IGZO target, and a sputtering target.
  • IGZO target technology capable of DC sputtering by reducing the bulk resistance of the substrate, keeping the carrier concentration and mobility of the sputtered film within a certain range, minimizing the occurrence of arcing, and active matrix driving.
  • the transparent semiconductor IGZO film which becomes an active layer portion of the thin film transistor in the liquid crystal display element or the organic EL display element, has an effect that it can be produced with high quality and efficiency.
  • the oxide sintered body used in the present invention contains indium (In), gallium (Ga), zinc (Zn), and oxygen (O) as constituent elements.
  • the oxygen partial pressure during film formation is reduced to obtain predetermined film characteristics (carrier concentration, mobility).
  • the carrier concentration in the film decreases as the oxygen partial pressure during film formation increases.
  • a carrier concentration of the order of 10 15 (cm ⁇ 3 ) or less is necessary, and in order to obtain this, it is necessary to introduce oxygen during film formation.
  • As the oxygen partial pressure increases negative factors such as a decrease in sputtering rate and plasma instability occur, so a lower oxygen partial pressure is preferable.
  • the IGZO sputtering target composed of indium (In), gallium (Ga), zinc (Zn), and oxygen (O) has an In, Ga, and Zn content excluding oxygen of 0.575 ⁇ In / (In + Ga) ⁇ 0. 500 and a composition range of Zn / (In + Ga + Zn) ⁇ 0.333.
  • DC sputtering can be performed while keeping the carrier concentration and mobility in a certain range, minimizing the occurrence of arcing.
  • the In 2 O 3 phase grows remarkably, and a large different phase having different electrical characteristics exists in the IGZO phase, leading to abnormal discharge.
  • the carrier concentration in the film tends to increase, and in order to obtain a film with a low carrier concentration, it is necessary to introduce a large amount of oxygen at the time of film formation, which makes the plasma during sputtering uneasy, and this also causes abnormal discharge. Become.
  • the amount of In is too small, the mobility of the film will be insufficient, so a certain amount or more is necessary. In order to ensure a predetermined mobility while avoiding abnormalities during sputtering, it is necessary to control the In composition in the present specification.
  • the IGZO target of the present invention has only the (In x Ga (1-x) ) 2 ZnO 4 (1>x> 0) phase, or (In x Ga (1-x) ) 2 ZnO 4 (1> x It is one of the major features that part of the In 2 O 3 phase is contained in addition to the> 0) phase and the bulk resistance is 15 m ⁇ ⁇ cm or less.
  • the sputtering target is characterized by having a structure in which the maximum diameter of the In 2 O 3 phase is 10 ⁇ m or less and having a relative density of 95% or more.
  • an IGZO film having film characteristics with a carrier concentration of 5 ⁇ 10 15 (cm ⁇ 3 ) or less and a mobility of 5 (cm 2 / Vs) or more can be obtained. These conditions can be set as necessary according to the purpose of improving the characteristics.
  • the relative density of the oxide sintered body of the present invention can be 95% or more, can be 98% or more, and can be 99% or more.
  • the relative density of the oxide sintered body is less than 95%, the variation in the carrier concentration of the film becomes large.
  • the oxide sintered body is used as a sputtering target and sputtered, The advantage of the present invention is clear because there is a disadvantage that the occurrence of arcing increases with the passage of time and the obtained film characteristics deteriorate.
  • the measurement method of the relative density of the oxide sintered body can first determine the value of the density at which the relative density of the oxide sintered body is 100% from each constituent element and form for each composition.
  • the density of the actually produced oxide sintered body can be obtained by the Archimedes method or the like, and the relative density can be obtained by dividing by the density value of 100%.
  • the measurement of the particle size of In 2 O 3 contained in the oxide sintered body becomes the maximum of each In 2 O 3 phase by image analysis from a structural photograph containing In 2 O 3 by a reflected electron image of SEM or the like. The diameter was measured and the maximum diameter in one field of view was determined. Five fields of view were measured at random, and the maximum value among them was taken as the maximum length.
  • the sputtering voltage during film formation can be lowered by reducing the bulk resistance of the target of the present invention.
  • the sputtering voltage is high, the film formed by the secondary ions and high energy scattering particles generated by sputtering is impacted and damaged, resulting in many oxygen vacancies.
  • the amount of oxygen vacancies in the film is reduced, and the partial pressure of oxygen during sputtering necessary for obtaining a predetermined carrier concentration can be reduced.
  • the size of the In 2 O 3 phase can be controlled by the component composition and the sintering temperature. That is, the higher the In concentration, the larger the In 2 O 3 phase grows, and the larger the size when sintered at a high temperature. Thus, the size of the In 2 O 3 phase can be controlled.
  • the sintering temperature is preferably 1420 ° C. or higher and 1480 ° C. or lower. If the sintering temperature is raised too much, the In 2 O 3 phase becomes coarse and the number of arcing increases, which is not preferable.
  • a representative example of the production process of the oxide sintered body according to the present invention is as follows.
  • a raw material indium oxide (In 2 O 3 ), gallium oxide (Ga 2 O 3 ), and zinc oxide (ZnO) can be used.
  • In 2 O 3 indium oxide
  • gallium oxide Ga 2 O 3
  • zinc oxide ZnO
  • Each raw material powder is weighed so as to have a desired composition ratio. As described above, impurities inevitably contained in these are included.
  • the target is prepared by calcining the raw material as necessary. After mixing each raw material with a super mixer, if necessary, they are packed in an alumina sagger and calcined at a temperature in the range of 950 to 1350 ° C. The holding time for the calcination is 2 to 10 hours in an oxygen atmosphere or an air atmosphere.
  • the mixed raw material is finely pulverized in units of 1 to 20 kg per batch, for example, with an attritor ( ⁇ 3 mm zirconia beads, agitator rotation speed 300 rpm) or LMZ (Star Mill: manufactured by Ashizawa Finetech) for about 2 to 5 hours.
  • an attritor ⁇ 3 mm zirconia beads, agitator rotation speed 300 rpm
  • LMZ Star Mill: manufactured by Ashizawa Finetech
  • the raw material is batched in units of 20 to 1000 kg and finely pulverized by LMZ (Star Mill: manufactured by Ashizawa Finetech) for about 2 to 8 hours ( ⁇ 0.5 mm zirconia beads, input power 2.0 to 20.0 kW ⁇ Hr )
  • the finely pulverized slurry is added with a binder, dried with a granulator at 100 to 250 ° C., and sieved with a sieve having an opening of 250 ⁇ m to collect powder.
  • the specific surface area of each powder is measured before and after pulverization. 50 to 200 cc of an aqueous PVA solution (6% PVA solid content) is mixed with 1000 g of IGZO powder.
  • a mold of ⁇ 210 mm is filled with 1000 g of powder and pressed at a surface pressure of 400 to 1000 kgf ⁇ cm 2 to obtain a molded body.
  • This molded body is double vacuum packed with vinyl and CIPed at 1500 to 4000 kgf / cm 2 .
  • sintering is performed at a predetermined temperature (retention time 5 to 24 hours, in an oxygen atmosphere) to obtain a sintered body.
  • the oxide sintered body obtained as described above is processed into a target of, for example, 152.4 ⁇ ⁇ 5 tmm by performing cylindrical grinding on the outer periphery and surface grinding on the surface side.
  • an indium alloy or the like is bonded to a copper backing plate as a bonding metal to obtain a sputtering target.
  • the raw material powder used in the examples is as shown in Table 1.
  • IGZO raw materials prepare In, Ga, Zn excluding oxygen in the metal ratio, In / (In + Ga) ⁇ 0.575, Zn / (In + Ga + Zn) ⁇ 0.333, and balance with Ga composition. Then, these raw material combinations and production conditions (fine pulverization, calcination temperature, sintering temperature) were changed to produce targets, and various tests were performed. Details thereof are shown in Examples 1 to 7 in Table 1.
  • the bulk resistance value was measured by a four-probe method using a resistivity measuring instrument ( ⁇ -5 +, manufactured by NP Corporation).
  • sputtering conditions As the sputtering apparatus, a DC magnetron sputtering apparatus was used. The film formation conditions were room temperature, DC 500 W, oxygen concentration 6%, and the annealing conditions were 300 ° C. ⁇ 1 hr in an air atmosphere.
  • the carrier concentration and mobility of the film were measured using a Toyo Technica (ResiTest8400 Hall effect measuring device).
  • the target was a carrier concentration of 5 ⁇ 10 15 (cm ⁇ 3 ) or less and a mobility of 5 (cm 2 / Vs) or more.
  • Example 1 In 2 O 3 as raw materials, using In 2 O 3 powder having a particle size of 1.3 .mu.m, specific surface area (BET) 4.4m 2 / g, as Ga 2 O 3 raw material, the particle size 5.6 [mu] m, a specific surface area 9.
  • BET specific surface area
  • a 1 m 2 / g Ga 2 O 3 powder was used, and a ZnO powder having a particle size of 1.1 ⁇ m and a specific surface area of 3.8 m 2 / g was used as a ZnO raw material.
  • the In 2 O 3 raw material is 46.6 wt%
  • the Ga 2 O 3 raw material is 28.6 wt%
  • the ZnO raw material is 24.8 wt%
  • the total is 100 wt%
  • the metal ratio of In, Ga, and Zn is 0.524 in In / (In + Ga), Zn / (In + Ga + Zn) is 0.323, and the balance is Ga.
  • the specific surface area before pulverization was 6.0 m 2 / g.
  • the specific surface area after pulverization was 17.8 m 2 / g. This difference was 11.8 m 2 / g.
  • the sintering temperature of the powder was 1430 ° C., and the sintering atmosphere was sintered in an oxygen atmosphere.
  • the density is 6.32 g / cm 3
  • the relative density is 96.8%
  • the bulk resistance value is 3.8 m ⁇ ⁇ cm, and it has a low bulk resistance value that allows DC sputtering sufficiently. It was.
  • the maximum size (major axis) of the In 2 O 3 phase was 4.9 ⁇ m, and the phase state was two phases of In x Ga (1-x ) 2 ZnO 4 phase and In 2 O 3 phase.
  • the carrier concentration was 2.21 ⁇ 10 15 (cm ⁇ 3 ) and the mobility was 9.14 (cm 2 / Vs).
  • the occurrence of arcing during sputtering was as small as 121 times. All satisfied the conditions of the present invention.
  • Example 2 In 2 O 3 powder, particle size 1.3 .mu.m, using In 2 O 3 powder having a specific surface area of 4.4 m 2 / g, as Ga 2 O 3 raw material, the particle size 5.6 [mu] m, a specific surface area of 9.1 m 2 / g using Ga 2 O 3 powder, ZnO as a raw material, with particle size 1.1 .mu.m, ZnO powder having a specific surface area of 3.8 m 2 / g.
  • the In 2 O 3 raw material is 44.7 wt%
  • the Ga 2 O 3 raw material is 29.6 wt%
  • the ZnO raw material is 25.7 wt%
  • the total is 100 wt%
  • In, Ga, and Zn have a metal ratio of In / (In + Ga) of 0.505, Zn / (In + Ga + Zn) of 0.331, and the balance of Ga.
  • the specific surface area before pulverization was 6.0 m 2 / g.
  • the specific surface area after pulverization was 18.0 m 2 / g. This difference was 12.0 m 2 / g.
  • the sintering temperature of the powder was 1430 ° C., and the sintering atmosphere was sintered in an oxygen atmosphere.
  • the density is 6.33 g / cm 3
  • the relative density is high as 97.3%
  • the bulk resistance value is 5.8 m ⁇ ⁇ cm, and it has a low bulk resistance value that allows DC sputtering sufficiently.
  • the phase state was a single phase of In x Ga (1-x) ) 2 ZnO 4 phase.
  • the carrier concentration was 1.34 ⁇ 10 15 (cm ⁇ 3 ) and the mobility was 6.46 (cm 2 / Vs).
  • the occurrence of arcing during sputtering was as small as 86 times. All satisfied the conditions of the present invention.
  • Example 3 In 2 O 3 powder, particle size 1.3 .mu.m, using In 2 O 3 powder having a specific surface area of 4.4 m 2 / g, as Ga 2 O 3 raw material, the particle size 5.6 [mu] m, a specific surface area of 9.1 m 2 / g of Ga 2 O 3 powder was used, and ZnO powder having a particle size of 1.1 ⁇ m and a specific surface area of 3.8 m 2 / g was used as a ZnO raw material.
  • the density is 6.33 g / cm 3
  • the relative density is 97.1%
  • the bulk resistance value is 4.3 m ⁇ ⁇ cm, and it has a low bulk resistance value that enables DC sputtering sufficiently. It was.
  • the maximum size (major axis) of the In 2 O 3 phase was 5.2 ⁇ m, and the phase state was two phases of In x Ga (1-x ) 2 ZnO 4 phase and In 2 O 3 phase.
  • the carrier concentration was 1.56 ⁇ 10 15 (cm ⁇ 3 ) and the mobility was 7.23 (cm 2 / Vs).
  • the occurrence of arcing during sputtering was as small as 130 times. All satisfied the conditions of the present invention.
  • Example 4 In 2 O 3 powder, particle size 1.3 .mu.m, using In 2 O 3 powder having a specific surface area of 4.4 m 2 / g, as Ga 2 O 3 raw material, the particle size 5.6 [mu] m, a specific surface area of 9.1 m 2 / g using Ga 2 O 3 powder, ZnO as a raw material, with particle size 1.1 .mu.m, ZnO powder having a specific surface area of 3.8 m 2 / g.
  • the In 2 O 3 raw material is 46.6 wt%
  • the Ga 2 O 3 raw material is 28.6 wt%
  • the ZnO raw material is 24.8 wt%
  • the total is 100 wt%
  • the metal ratio of In, Ga, and Zn is 0.524 in In / (In + Ga), Zn / (In + Ga + Zn) is 0.323, and the balance is Ga.
  • the density is 6.32 g / cm 3
  • the relative density is as high as 96.8%
  • the bulk resistance value is 2.9 m ⁇ ⁇ cm, and it has a low bulk resistance value that allows DC sputtering sufficiently. It was.
  • the maximum size (major axis) of the In 2 O 3 phase was 4.3 ⁇ m, and the phase state was two phases of In x Ga (1-x ) 2 ZnO 4 phase and In 2 O 3 phase.
  • the carrier concentration was 1.72 ⁇ 10 15 (cm ⁇ 3 ) and the mobility was 8.62 (cm 2 / Vs).
  • the occurrence of arcing during sputtering was as small as 128 times. All satisfied the conditions of the present invention.
  • Example 5 In 2 O 3 powder, particle size 1.3 .mu.m, using In 2 O 3 powder having a specific surface area of 4.4 m 2 / g, as Ga 2 O 3 raw material, the particle size 5.6 [mu] m, a specific surface area of 9.1 m 2 / g of Ga 2 O 3 powder was used, and ZnO powder having a particle size of 1.1 ⁇ m and a specific surface area of 3.8 m 2 / g was used as a ZnO raw material.
  • the In 2 O 3 raw material is 46.6 wt%
  • the Ga 2 O 3 raw material is 28.6 wt%
  • the ZnO raw material is 24.8 wt%
  • the total is 100 wt%
  • the metal ratio of In, Ga, and Zn is 0.524 in In / (In + Ga), Zn / (In + Ga + Zn) is 0.323, and the balance is Ga.
  • the specific surface area before pulverization was 5.9 m 2 / g.
  • the specific surface area after pulverization was 17.5 m 2 / g. This difference was 11.6 m 2 / g.
  • the sintering temperature of the powder was 1370 ° C., and the sintering atmosphere was sintered in an oxygen atmosphere.
  • the density is 6.32 g / cm 3
  • the relative density is 96.8%
  • the bulk resistance value is 8.0 m ⁇ ⁇ cm, and it has a low bulk resistance value that allows DC sputtering sufficiently. It was.
  • the maximum size (major axis) of the In 2 O 3 phase was 3.5 ⁇ m, and the phase state was two phases of In x Ga (1-x ) 2 ZnO 4 phase and In 2 O 3 phase.
  • the carrier concentration was 2.61 ⁇ 10 15 (cm ⁇ 3 ) and the mobility was 8.89 (cm 2 / Vs). Moreover, the occurrence of arcing during sputtering was as small as 142 times. All satisfied the conditions of the present invention.
  • Example 6 In 2 O 3 powder, particle size 1.3 .mu.m, using In 2 O 3 powder having a specific surface area of 4.4 m 2 / g, as Ga 2 O 3 raw material, the particle size 5.6 [mu] m, a specific surface area of 9.1 m 2 / g of Ga 2 O 3 powder was used, and ZnO powder having a particle size of 1.1 ⁇ m and a specific surface area of 3.8 m 2 / g was used as a ZnO raw material.
  • the In 2 O 3 raw material is 49.9 wt%
  • the Ga 2 O 3 raw material is 24.9 wt%
  • the ZnO raw material is 25.3 wt%
  • the total is 100 wt%
  • the metal ratio of In, Ga, and Zn is 0.575 in In / (In + Ga), Zn / (In + Ga + Zn) is 0.332, and the balance is Ga.
  • the density is 6.38 g / cm 3
  • the relative density is as high as 97.5%
  • the bulk resistance value is 9.8 m ⁇ ⁇ cm, and it has a low bulk resistance value that allows DC sputtering sufficiently.
  • the phase state was a single phase of In x Ga (1-x) ) 2 ZnO 4 phase.
  • the carrier concentration was 3.53 ⁇ 10 15 (cm ⁇ 3 ) and the mobility was 9.53 (cm 2 / Vs).
  • the occurrence of arcing during sputtering was as small as 134 times. All satisfied the conditions of the present invention.
  • Example 7 In 2 O 3 powder, particle size 1.3 .mu.m, using In 2 O 3 powder having a specific surface area of 4.4 m 2 / g, as Ga 2 O 3 raw material, the particle size 5.6 [mu] m, a specific surface area of 9.1 m 2 / g of Ga 2 O 3 powder was used, and ZnO powder having a particle size of 1.1 ⁇ m and a specific surface area of 3.8 m 2 / g was used as a ZnO raw material.
  • the In 2 O 3 raw material is 52.4 wt%
  • the Ga 2 O 3 raw material is 26.2 wt%
  • the ZnO raw material is 21.4 wt%
  • the total is 100 wt%
  • In, Ga, and Zn are metal ratios
  • In / (In + Ga) is 0.575
  • Zn / (In + Ga + Zn) is 0.286
  • the balance is Ga.
  • the specific surface area before pulverization was 6.2 m 2 / g.
  • the specific surface area after pulverization was 15.5 m 2 / g. This difference was 9.3 m 2 / g.
  • the sintering temperature of the powder was 1430 ° C., and the sintering atmosphere was sintered in an oxygen atmosphere.
  • the density is 6.42 g / cm 3
  • the relative density is 97.2%
  • the bulk resistance value is 2.1 m ⁇ ⁇ cm
  • the maximum size (major axis) of the In 2 O 3 phase was 8.8 ⁇ m
  • the phase state was two phases of In x Ga (1-x ) 2 ZnO 4 phase and In 2 O 3 phase.
  • the carrier concentration was 4.55 ⁇ 10 15 (cm ⁇ 3 ) and the mobility was 7.34 (cm 2 / Vs).
  • the occurrence of arcing during sputtering was as small as 173 times. All satisfied the conditions of the present invention.
  • the density was 6.33 g / cm 3
  • the relative density was as high as 97.3%
  • the bulk resistance value was as high as 32 m ⁇ ⁇ cm
  • DC sputtering was not sufficient.
  • the phase state was a single phase of In x Ga (1-x) ) 2 ZnO 4 phase.
  • the carrier concentration increased to 5.87 ⁇ 10 15 (cm ⁇ 3 ).
  • the mobility was 8.92 (cm 2 / Vs).
  • the occurrence of arcing during sputtering was as small as 92 times. The conditions of the present invention were not satisfied.
  • the In 2 O 3 raw material is 46.6 wt%
  • the Ga 2 O 3 raw material is 28.6 wt%
  • the ZnO raw material is 24.8 wt%
  • the total is 100 wt%
  • the metal ratio of In, Ga, and Zn is 0.500 in In / (In + Ga), Zn / (In + Ga + Zn) is 0.333, and the balance is Ga.
  • the density was 6.32 g / cm 3
  • the relative density was 97.2%
  • the bulk resistance was as high as 80 m ⁇ ⁇ cm
  • DC sputtering was not sufficient.
  • the phase state was a single phase of In x Ga (1-x) ) 2 ZnO 4 phase.
  • the carrier concentration increased to 10.8 ⁇ 10 15 (cm ⁇ 3 ).
  • the mobility was 10.5 (cm 2 / Vs).
  • the occurrence of arcing during sputtering was as small as 76 times. The conditions of the present invention were not satisfied.
  • the In 2 O 3 raw material is 61.7 wt%
  • the Ga 2 O 3 raw material is 16.7 wt%
  • the ZnO raw material is 21.7 wt%
  • the total is 100 wt%
  • the metal ratio of In, Ga, and Zn is 0.714 in In / (In + Ga), Zn / (In + Ga + Zn) is 0.333, and the balance is Ga.
  • the specific surface area before pulverization was 5.1 m 2 / g.
  • the specific surface area after pulverization was 16.0 m 2 / g. This difference was 10.9 m 2 / g.
  • the sintering temperature of the powder was 1430 ° C., and the sintering atmosphere was sintered in an oxygen atmosphere.
  • the density is 6.55 g / cm 3
  • the relative density is 98.3%
  • the bulk resistance value is 2.7 m ⁇ ⁇ cm, and it has a low bulk resistance value that allows DC sputtering sufficiently. It was.
  • the maximum size (major axis) of the In 2 O 3 phase was increased to 11.1 ⁇ m, and the phase state was two phases of In x Ga (1-x ) 2 ZnO 4 phase and In 2 O 3 phase.
  • the carrier concentration increased to 1.15 ⁇ 10 19 (cm ⁇ 3 ).
  • the mobility was 29.0 (cm 2 / Vs).
  • arcing occurred during sputtering as many times as 366 times. This is a result of an increase in the In 2 O 3 phase and did not satisfy the conditions of the present invention.
  • the In 2 O 3 raw material is 52.4 wt%
  • the Ga 2 O 3 raw material is 26.2 wt%
  • the ZnO raw material is 21.4 wt%
  • the total is 100 wt%
  • In, Ga, and Zn are metal ratios
  • In / (In + Ga) is 0.575
  • Zn / (In + Ga + Zn) is 0.286
  • the balance is Ga.
  • the specific surface area before pulverization was 6.2 m 2 / g.
  • the specific surface area after pulverization was 15.5 m 2 / g. This difference was 9.3 m 2 / g.
  • the sintering temperature of the powder was 1490 ° C., and the sintering atmosphere was sintered in an oxygen atmosphere.
  • the density is 6.43 g / cm 3
  • the relative density is 97.4%
  • the bulk resistance value is 1.2 m ⁇ ⁇ cm
  • the maximum size (major axis) of the In 2 O 3 phase increased to 13.5 ⁇ m, and the phase state was two phases of In x Ga (1-x ) 2 ZnO 4 phase and In 2 O 3 phase.
  • the carrier concentration was 4.55 ⁇ 10 15 (cm ⁇ 3 ) and the mobility was 7.34 (cm 2 / Vs).
  • the occurrence of arcing during sputtering was as high as 514 times.
  • Example 7 the component composition is the same as in Example 7, in Comparative Example 4, coarsening of the In 2 O 3 phase was observed. This is probably because the sintering of the In 2 O 3 phase was coarsened because the sintering temperature was higher at 1490 ° C. in Comparative Example 4 than at 1430 ° C. in Example 7.
  • the In 2 O 3 raw material is 42.9 wt%
  • the Ga 2 O 3 raw material is 31.9 wt%
  • the ZnO raw material is 25.2 wt%
  • the total is 100 wt%
  • In, Ga, and Zn have a metal ratio of In / (In + Ga) of 0.476, Zn / (In + Ga + Zn) of 0.323, and the balance of Ga.
  • the density was 5.60 g / cm 3 and the relative density was as low as 86.5%, and there was no conductivity and DC sputtering could not be performed.
  • the phase state was a single phase of In x Ga (1-x) ) 2 ZnO 4 phase. Since sputtering was not performed, thin film characteristics could not be evaluated.
  • the high-density IGZO oxide sintered body used as the sputtering target for producing the transparent semiconductor IGZO film of the present invention can provide a high-density IGZO target, and can reduce the bulk resistance of the sputtering target and the sputtered film.
  • the IGZO target technology that allows DC sputtering to be performed while keeping the carrier concentration and mobility in a certain range, minimizing the occurrence of arcing, and providing an excellent effect that stable DC sputtering is possible. Have As a result, the target life can be lengthened, and there is little variation in quality, so that mass productivity can be improved.
  • This In—Ga—Zn—O-based (IGZO) material is useful for a field effect transistor because an amorphous oxide having an electron carrier concentration of less than 10 18 / cm 3 can be obtained. Moreover, since it can be used as an IGZO target without hindrance for a wide range of applications, its industrial utility value is high.

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Abstract

La présente invention se rapporte à une cible de pulvérisation de corps fritté IGZO qui comprend de l'indium (In), du gallium (Ga), du zinc (Zn) et de l'oxygène (O) et qui est caractérisée par le fait : que l'indium (In), le gallium (Ga) et le zinc (Zn) satisfont la relation 0,575 ≥ In/(In + Ga) ≥ 0,500 et se trouvent dans une plage de composition qui est représentée par la relation Zn/(In + Ga + Zn) > 0,333 ; qu'elle présente une structure monophasique comprenant une phase InxGa(1-x))2ZnO4(1 > X > 0) ou une structure biphasique comprenant une phase (InxGa(1-x))2ZnO4(1 > X > 0) et une phase In2O3 ; et que la phase In2O3 présente un diamètre maximal égal ou inférieur à 10 µm. La présente invention se rapporte également à une technologie de cible IGZO qui rend une pulvérisation à courant continu (CC) possible, qui présente une faible résistance de volume dans une cible de pulvérisation, une concentration de porteurs qui est égale ou inférieure à une plage fixée et une cible ayant une densité élevée et qui maintient l'apparition d'arcs électriques au minimum.
PCT/JP2014/056250 2013-03-29 2014-03-11 Cible de pulvérisation igzo et film igzo WO2014156601A1 (fr)

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KR1020157001570A KR20150023832A (ko) 2013-03-29 2014-03-11 Igzo 스퍼터링 타깃 및 igzo 막
CN201480002040.8A CN105308208A (zh) 2013-03-29 2014-03-11 Igzo溅射靶和igzo膜
KR1020177004745A KR101973873B1 (ko) 2013-03-29 2014-03-11 Igzo 스퍼터링 타깃 및 igzo 막

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