WO2014156302A1 - Composition céramique diélectrique et élément diélectrique - Google Patents
Composition céramique diélectrique et élément diélectrique Download PDFInfo
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- WO2014156302A1 WO2014156302A1 PCT/JP2014/052480 JP2014052480W WO2014156302A1 WO 2014156302 A1 WO2014156302 A1 WO 2014156302A1 JP 2014052480 W JP2014052480 W JP 2014052480W WO 2014156302 A1 WO2014156302 A1 WO 2014156302A1
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- dielectric
- ceramic composition
- dielectric ceramic
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- 239000000203 mixture Substances 0.000 title claims abstract description 55
- 239000000919 ceramic Substances 0.000 title claims abstract description 45
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 5
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 5
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 4
- 230000014509 gene expression Effects 0.000 claims description 3
- 239000002131 composite material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 19
- 230000005684 electric field Effects 0.000 description 16
- 239000000843 powder Substances 0.000 description 12
- 238000010304 firing Methods 0.000 description 10
- 239000011734 sodium Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- 239000003985 ceramic capacitor Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- -1 Tb2O3 Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- NVDNLVYQHRUYJA-UHFFFAOYSA-N hafnium(iv) carbide Chemical compound [Hf+]#[C-] NVDNLVYQHRUYJA-UHFFFAOYSA-N 0.000 description 1
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910003451 terbium oxide Inorganic materials 0.000 description 1
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
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- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
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- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
- C04B2235/3203—Lithium oxide or oxide-forming salts thereof
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
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- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
Definitions
- the present invention relates to a dielectric porcelain composition and an electronic component using the same, and more particularly to a dielectric porcelain composition and a dielectric element that are suitably used for medium to high voltage applications having a relatively high rated voltage.
- the rated voltage used in equipment such as ECM (engine electric computer module), fuel injection device, electronic control throttle, inverter, converter, HID headlamp unit, hybrid engine battery control unit, digital still camera, etc. will exceed 100V
- ECM engine electric computer module
- fuel injection device fuel injection device
- electronic control throttle electronic control throttle
- inverter electronic control throttle
- inverter converter
- HID headlamp unit hybrid engine battery control unit
- digital still camera digital still camera
- the conventional dielectric ceramic composition has been designed on the assumption that it is used under a DC voltage with a low electric field strength of, for example, about 1 V / ⁇ m, so that the multilayer ceramic capacitor used has been made thinner.
- DC bias rate of change the rate of change of capacitance with respect to an applied DC electric field
- high electric field refers to, for example, an electric field strength of 5 V / ⁇ m
- a high dielectric constant refers to, for example, 1000.
- barium titanate having an alkali metal oxide content of 0.02% by weight or less, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide , Erbium oxide, thulium oxide and ytterbium oxide, barium zirconate, magnesium oxide, and manganese oxide, and the following composition formula: ⁇ BaO ⁇ m TiO2 + ⁇ R2O3 + ⁇ BaZrO3 + ⁇ MgO + gMnO (However, R2O3 is at least one selected from Eu2O3, Gd2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3, Tm2O3 and Yb2O3, and ⁇ , ⁇ , ⁇ and g are mo.
- the perovskite-type barium titanate crystal particles (BCT-type crystal particles) containing Ca, Sr, Mg, Mn, and rare earth elements and part of the A site substituted with the Ca are described above.
- the main crystal particles have a core-shell structure in which the Ca concentration is larger on the particle surface side than the particle center, and Sr, Mg, Mn, and rare earth elements are unevenly distributed on the particle surface side, and the average particle size is 0.1 to
- a dielectric ceramic composition characterized by a thickness of 0.5 ⁇ m is disclosed.
- the relative dielectric constant is as large as 2500 or more, but the DC bias change rate of 5 V / ⁇ m is as large as ⁇ 70%, so that the DC bias characteristic is large. Is not good.
- the present invention has been made in view of such a situation, and the object thereof is suitable for use in medium- and high-voltage applications having a relatively high rated voltage, and the DC bias change rate of 5 V / ⁇ m is as very small as ⁇ 15%.
- a dielectric ceramic composition having a relatively high relative dielectric constant of 1000 or more, and a dielectric element using the dielectric ceramic composition.
- the present invention provides a dielectric ceramic composition which is a composite oxide represented by the following formula (1).
- A represents at least one element selected from Li, Na, and K.
- a, b, c, d, s, t, u, v, and x are numbers satisfying the following expressions, respectively.
- the dielectric ceramic composition of the present invention has the above-described configuration, the DC bias change rate of 5 V / ⁇ m is very small within ⁇ 15% and a relatively high relative dielectric constant of 1000 or more can be obtained.
- the present invention also provides a dielectric element comprising the above dielectric ceramic composition.
- Such a dielectric element has the above dielectric ceramic composition, it is useful for a capacitor for protecting a circuit used in, for example, a high electric field application circuit that requires a large dielectric constant when a high electric field is applied. is there.
- the DC bias change rate of 5 V / ⁇ m is very small within ⁇ 15% and a relatively high relative dielectric constant of 1000 or more.
- a dielectric element using the dielectric ceramic composition is very small.
- FIG. 1 is a preferred embodiment of a dielectric element according to the present invention. It is sectional drawing which shows another embodiment of the dielectric material which concerns on this invention.
- FIG. 1 shows a preferred embodiment of a dielectric element according to the present invention.
- a dielectric element 100 shown in FIG. 1 forms a capacitor including a disk-shaped dielectric 1 and a pair of electrodes 2 and 3 formed on both surfaces of the dielectric 1.
- Dielectric 1 is formed of a dielectric ceramic composition represented by the following formula (1).
- A represents at least one element selected from Li, Na, and K.
- a, b, c, d, s, t, u, v, and x are numbers satisfying the following expressions, respectively.
- Such a dielectric porcelain composition has the above-described configuration, so that the DC bias change rate of 5 V / ⁇ m can be made extremely small within ⁇ 15% while the relative dielectric constant is 1000 or more.
- the dielectric ceramic of the present invention is a combination of a ferroelectric and an antiferroelectric composition. By having this specific combination, a dielectric ceramic composition having a relatively high relative dielectric constant and good DC bias characteristics is obtained. can get.
- the dielectric constant will be 1000 or less, the DC bias change rate of 5 V / ⁇ m will be -15% or more, and the withstand voltage will be low. Therefore, it is not preferable.
- the content of the composite oxide represented by the formula (1) is 90% by mass or more based on the entire dielectric ceramic composition.
- the balance may contain impurities such as P and Zr that may be mixed in the manufacturing process in addition to the subcomponents such as the paraelectric ceramic composition.
- the composition of the dielectric ceramic composition can be measured by, for example, fluorescent X-ray analysis or ICP emission spectroscopic analysis.
- the relative density of the dielectric ceramic composition is preferably 95% or more.
- the relative density refers to a measured value of density with respect to the theoretical density.
- the theoretical density is calculated from the lattice constant obtained by X-ray diffraction and the stoichiometric ratio obtained by assuming a perfect crystal.
- the relative density of the dielectric ceramic composition can be measured, for example, by the Archimedes method.
- the relative density of the dielectric ceramic composition can be adjusted by changing the firing temperature and firing time.
- the powder raw material is weighed so that the dielectric ceramic composition (sintered body) after the main firing satisfies the composition of the dielectric ceramic composition according to the present embodiment.
- each raw material powder weighed is wet mixed by a ball mill or the like.
- a calcined product is obtained by calcining the mixture obtained by wet mixing.
- the calcination is usually performed in air.
- the calcination temperature is preferably 700 to 900 ° C., and the calcination time is preferably 1 to 10 hours.
- the obtained calcined product is wet pulverized with a ball mill or the like and then dried to obtain a calcined powder.
- a small amount of a binder is added to the obtained calcined powder and press-molded to obtain a molded body.
- the molding pressure is preferably about 5 t / cm 2 .
- the shape of a molded object For example, it can be set as the disk shaped molded object of planar dimension (PHI) 17mm and thickness about 1mm.
- a dielectric ceramic composition sample is obtained by firing the obtained molded body.
- the firing is usually performed in air.
- the firing temperature is preferably 950 to 1300 ° C., and the firing time is preferably 2 to 10 hours.
- metal electrodes such as silver are formed on both surfaces of the obtained dielectric ceramic composition sample.
- the electrodes are formed by methods such as vapor deposition, sputtering, baking, and electroless plating.
- FIG. 2 is a cross-sectional view showing another embodiment of the dielectric element according to the present invention.
- a laminated dielectric element 200 shown in FIG. 2 includes a rectangular parallelepiped laminated body 5 and a pair of terminal electrodes 11 ⁇ / b> A and 11 ⁇ / b> B respectively formed on opposite end surfaces of the laminated body 5.
- the laminated body 5 includes an element body 8 formed by alternately laminating internal electrode layers (electrode layers) 6A and 6B via a dielectric layer 7, and the element body 8 is arranged on both end surfaces in the laminating direction (upper and lower sides in the figure). It is comprised from a pair of protective layers 9 and 10 provided so that it may be inserted
- the dielectric layer 7 is a layer made of the dielectric ceramic composition according to the present invention.
- the thickness per layer of the dielectric layer 7 can be arbitrarily set, and can be set to 1 to 100 ⁇ m, for example.
- the internal electrode layers 6A and 6B are provided in parallel to each other.
- the internal electrode layer 6 ⁇ / b> A is formed so that one end is exposed on the end surface of the multilayer body 5 where the terminal electrode 11 ⁇ / b> A is formed.
- the internal electrode layer 6B is formed so that one end portion is exposed on the end surface of the multilayer body 5 where the terminal electrode 11B is formed.
- the internal electrode layer 6A and the internal electrode layer 6B are arranged so that most of them overlap in the stacking direction.
- a metal such as Au, Pt, or Ag is used as the material of the internal electrode layers 6A and 6B.
- the terminal electrodes 11A and 11B are in contact with the end portions of the internal electrode layers 6A and 6B exposed at the end surfaces at the end surfaces of the multilayer body 5 on which the terminal electrodes 11A and 11B are provided. Thereby, terminal electrode 11A, 11B is electrically connected with internal electrode layer 6A, 6B, respectively.
- the terminal electrodes 11A and 11B can be made of a conductive material whose main component is Ag, Au, Cu or the like.
- the thicknesses of the terminal electrodes 11A and 11B are appropriately set depending on the application, the size of the multilayer dielectric element, and the like, but can be set to 10 to 50 ⁇ m, for example.
- the dielectric ceramic composition and the dielectric element of the present embodiment have been described above. However, since the dielectric ceramic composition has good DC bias characteristics when a high electric field is applied, for example, it is relatively rated. It can be suitably used for medium and high voltage capacitors having a high voltage.
- the present invention is not limited to the above embodiment.
- a known element can be used as a configuration other than the dielectric ceramic composition.
- the calcined powder can be produced by a hydrothermal synthesis method or the like.
- (BiNa) TiO 3 , (BiK) TiO 3 , BaTiO 3 , and NaNbO 3 can be prepared, mixed, and sintered as precursors.
- Example 1 to 26 In order to produce a dielectric ceramic composition, as starting materials, bismuth oxide (Bi 2 O 3 ), sodium carbonate (Na 2 CO 3 ), potassium carbonate (K 2 CO 3 ), barium carbonate (BaCO 3 ), titanium oxide (TiO 2 ) and niobium oxide (Nb 2 O 5 ) powder were prepared. In Example 15, in addition to the above, a powder of lithium carbonate (Li 2 CO 3 ) was also prepared. For Examples 16 and 17, in addition to the above, a powder of potassium carbonate (K 2 CO 3 ) was also prepared.
- a, b, c, d, s + u, t, v, and x in Table 1 are numerical values of a, b, c, d, s + u, t, v, and x in the following formula (1), respectively. Indicates. For Examples and Comparative Examples other than Examples 15 to 17, the A component is Na, Example 15 is the A component Li, Example 16 is K, and Example 17 is Na and K.
- each raw material powder weighed was wet mixed by a ball mill, and the obtained mixture was calcined in air at 850 ° C. for 2 hours to obtain a calcined product.
- the obtained calcined product was wet pulverized by a ball mill to obtain a calcined powder.
- a small amount of binder was added to the calcined powder, and it was molded at a pressure of about 5 t / cm 2 to obtain a disk-shaped molded body having a planar dimension of ⁇ 17 mm and a thickness of about 1 mm.
- the obtained molded body is fired in the air at a firing temperature of 950 to 1300 ° C. and a firing time of 2 to 10 hours under a relative density of 95% to obtain a dielectric ceramic composition sample. It was.
- the density measurement was performed on the obtained dielectric ceramic sample, the density of all the samples was 95% or more of the theoretical density.
- composition of the obtained dielectric ceramic composition sample was analyzed, it was equal to the weighed composition ratio.
- An Ag electrode was vapor-deposited on both surfaces of the obtained dielectric ceramic composition sample to produce a dielectric element.
- a withstand voltage test was performed by applying a DC electric field of 10 V / ⁇ m to each dielectric element.
- Table 1 shows the dielectric constant and DC bias characteristics at room temperature of 25 ° C.
- the bar portion in the table indicates that charge leaked during measurement and the value was not obtained.
- those that did not break down were indicated by ⁇ , and those that did break down were indicated by ⁇ .
- Those having a relative dielectric constant of 1000 or more, a DC bias change rate of 5 V / ⁇ m within ⁇ 15%, and having no dielectric breakdown in a DC electric field of 10 V / ⁇ m were judged good.
- the dielectric ceramic compositions of Examples 01 to 26 had a small DC bias change rate and a practically sufficiently large dielectric constant when a high electric field was applied.
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Abstract
L'invention a pour objet une composition céramique diélectrique qui, lorsqu'une polarisation en continu de 5 V/μm y est appliquée, présente un très petit taux de variation de capacité s'inscrivant dans une plage de 0 à -15 % et qui a une constante diélectrique relativement élevée supérieure ou égale à 1000 ; et un élément diélectrique utilisant la composition céramique diélectrique. La composition céramique diélectrique selon l'invention est constituée d'un oxyde composite représenté par la formule (1) {[(BisNat)a (BiuKv)bBac]1-dAd}xTi1-dNbdO3 [dans laquelle : A représente au moins un élément choisi parmi Li, Na et K ; et a, b, c, d, s, t, u, v et x représentent respectivement des nombres satisfaisant aux formules 0,10≤a<0,95 0,00<b≤0,85 0,05≤c≤0,70 a+b+c=1 0,10≤d≤0,50 0,90≤s+u≤1,00 0,45≤t≤0,50 0,45≤v≤0,50 et 0,95≤x≤1,05].
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US14/780,017 US9530563B2 (en) | 2013-03-28 | 2014-02-04 | Dielectric ceramic composition and dielectric element |
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WO2016189003A1 (fr) * | 2015-05-27 | 2016-12-01 | Epcos Ag | Composition diélectrique à base de titanate de bismuth sodium strontium, et élément diélectrique, composant électronique et composant électronique stratifié correspondants |
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WO2016189005A1 (fr) * | 2015-05-27 | 2016-12-01 | Epcos Ag | Composition diélectrique à base de titanate de bismuth-sodium-strontium, élément diélectrique, composant électronique et composant électronique stratifié correspondants |
WO2016189003A1 (fr) * | 2015-05-27 | 2016-12-01 | Epcos Ag | Composition diélectrique à base de titanate de bismuth sodium strontium, et élément diélectrique, composant électronique et composant électronique stratifié correspondants |
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US10497514B2 (en) | 2015-07-17 | 2019-12-03 | Tdk Electronics Ag | Dielectric composition, dielectric element, electronic component and laminated electric component |
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JP6102410B2 (ja) | 2017-03-29 |
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