WO2014148512A1 - 透明導電体、及び、電子デバイス - Google Patents
透明導電体、及び、電子デバイス Download PDFInfo
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- WO2014148512A1 WO2014148512A1 PCT/JP2014/057403 JP2014057403W WO2014148512A1 WO 2014148512 A1 WO2014148512 A1 WO 2014148512A1 JP 2014057403 W JP2014057403 W JP 2014057403W WO 2014148512 A1 WO2014148512 A1 WO 2014148512A1
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- WIPO (PCT)
- Prior art keywords
- layer
- admittance
- transparent conductor
- light
- conductive layer
- Prior art date
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/017—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of aluminium or an aluminium alloy, another layer being formed of an alloy based on a non ferrous metal other than aluminium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/412—Transparent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
Definitions
- the present invention relates to a transparent conductor and an electronic device including the transparent conductor.
- An organic electroluminescence device (so-called organic EL device) using electroluminescence (hereinafter referred to as EL) of an organic material is a thin-film type completely solid device capable of emitting light at a low voltage of several V to several tens V. It has many excellent features such as high brightness, high luminous efficiency, thinness, and light weight. For this reason, it has been attracting attention in recent years as surface light emitters such as backlights for various displays, display boards such as signboards and emergency lights, and illumination light sources.
- Such an organic electroluminescent element has a configuration in which a light emitting layer composed of an organic material is sandwiched between two electrodes, and emitted light generated in the light emitting layer passes through the electrode and is extracted outside. For this reason, at least one of the two electrodes is configured as a transparent conductor.
- oxide semiconductor materials such as indium tin oxide (ITO) and materials aiming at low resistance by laminating ITO and silver have been studied (for example, the following) (See Patent Document 1 and Patent Document 2).
- ITO indium tin oxide
- Patent Document 2 the material cost is high, and it is necessary to anneal at about 300 ° C. after formation in order to reduce resistance.
- the structure which ensures electroconductivity by the thickness thinner than silver alone by mixing aluminum with silver is also proposed (for example, refer patent document 3 below).
- the present invention provides a transparent conductor having both sufficient conductivity and light transmittance, and an electronic device whose performance is improved by using this transparent conductor.
- an admittance adjusting layer and a conductive layer are laminated in this order.
- the conductive layer includes a metal material layer having a thickness of 15 nm or less and a platinum group element-containing layer containing at least one of Pt and Pd.
- at least one of x 1 and x 2 is 1.6 or more.
- the electronic device of this invention is equipped with the said transparent conductor.
- the transparent conductor of the present invention since it has a conductive layer in which a metal material is formed adjacent to the platinum group element-containing layer, interaction between the platinum group element and the metal material can be obtained, and it is thin but uniform. A thick conductive layer is obtained. Furthermore, by adjusting the optical admittances Y 1 and Y 2 of the conductor layer by the admittance adjusting layer, the light transmittance of the transparent conductor can be improved. Therefore, in the transparent conductor, it is possible to achieve both improvement in conductivity and improvement in light transmittance. Moreover, the electronic device excellent in electroconductivity and light transmittance can be comprised using this transparent conductor.
- FIG. 1 It is a figure which shows schematic structure of the transparent conductor of 1st Embodiment. It is a figure which shows the admittance locus
- FIG. 1 It is a figure which shows the admittance locus
- the transparent conductor 10 includes an admittance adjusting layer 12 and a conductive layer 15.
- the conductive layer 15 has a configuration in which a metal material layer 14 and a platinum group element-containing layer 13 adjacent to the metal material layer 14 are provided.
- the platinum group element-containing layer 13 has a configuration sandwiched between the metal material layer 14 and the admittance adjustment layer 12.
- the transparent conductor 10 is formed on the substrate 11 with the admittance adjusting layer 12 and the conductive layer 15 including the platinum group element-containing layer 13 and the metal material layer 14.
- the transparent conductor 10 has a configuration in which the admittance adjusting layer 12, the platinum group element-containing layer 13, and the metal material layer 14 are laminated on the base material 11 in this order.
- the platinum group element-containing layer 13 is sandwiched between the admittance adjusting layer 12 and the metal material layer 14.
- the transparent conductor 10 preferably has an average absorptance of light with a wavelength of 400 nm to 800 nm of 15% or less and a maximum absorptance of 25% or less.
- the transparent conductor 10 has an average absorptance of light having a wavelength of 400 nm to 800 nm of 15% or less, preferably 12% or less, and more preferably 10% or less.
- the maximum value of the absorptance of light having a wavelength of 400 nm to 800 nm is 25% or less, preferably 20% or less, and more preferably 15% or less.
- the light absorption rate of the transparent conductor 10 can be reduced by suppressing the plasmon absorption rate of the conductive layer 15 and the light absorption rate of the material constituting each layer.
- the average transmittance of light having a wavelength of 450 nm to 800 nm of the transparent conductor 10 is preferably 50% or more, more preferably 70% or more, and further preferably 80% or more.
- the average reflectance of light having a wavelength of 500 nm to 700 nm of the transparent conductor 10 is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less.
- the transparent conductor 10 is applicable also to the use as which high transparency is requested
- the absorptance, average transmittance, and average reflectance are values measured by allowing measurement light to enter the transparent conductor from an angle inclined by 5 ° with respect to the front surface of the transparent conductor. Absorptivity, average transmittance and average reflectance are measured with a spectrophotometer.
- the surface resistance of the transparent conductor 10 is 30 ⁇ / sq. Or less, more preferably 15 ⁇ / sq. It is as follows.
- the surface resistance value of the transparent conductor 10 can be adjusted by the thickness of the conductive layer 15 and the like.
- the surface resistance value of the transparent conductor 10 can be measured according to, for example, JIS K7194, ASTM D257, and the like. It can also be measured by a commercially available surface resistivity meter.
- transparent conductor 10 of this example means that the light transmittance at a wavelength of 550 nm is 50% or more.
- the base material 11 on which the transparent conductor 10 is formed is a support material for various elements formed thereon.
- the substrate 11 preferably has high transparency to visible light. Examples of such a substrate 11 include glass, quartz, and a transparent resin film, but are not limited thereto.
- the base material 11 preferably has an average transmittance of light having a wavelength of 450 to 800 nm of 70% or more, more preferably 80% or more, and further preferably 85% or more.
- the average light transmittance of the substrate 11 is low, the average light transmittance of the entire transparent conductor is lowered.
- the average absorptance of light having a wavelength of 450 to 800 nm of the substrate 11 is preferably 10% or less, more preferably 5% or less, and further preferably 3% or less.
- the average transmittance of the base material 11 is a value measured by allowing measurement light to enter from an angle inclined by 5 ° with respect to the front surface of the base material 11.
- Average transmittance and average reflectance are measured with a spectrophotometer.
- the refractive index of the substrate 11 is preferably 1.40 to 1.95, more preferably 1.45 to 1.75, and still more preferably 1.45 to 1.70.
- the refractive index of the substrate 11 is usually determined by the material of the substrate 11.
- the refractive index of the substrate 11 is the refractive index of light having a wavelength of 510 nm, and is measured with an ellipsometer.
- the thickness of the substrate 11 is preferably 1 ⁇ m to 20 mm, more preferably 10 ⁇ m to 2 mm.
- the thickness of the base material 11 is thinner than 1 ⁇ m, the strength of the base material 11 becomes low, and there is a possibility that the base material 11 is damaged when an element is formed on the base material 11.
- the thickness of the base material 11 is too thick, it may cause the flexibility and light transmittance of the transparent conductor to decrease.
- the glass examples include silica glass, soda lime silica glass, lead glass, borosilicate glass, and alkali-free glass.
- silica glass soda lime silica glass
- lead glass lead glass
- borosilicate glass alkali-free glass.
- physical treatment such as polishing, coating films made of inorganic or organic materials, and the like, as necessary
- a hybrid film is formed by combining these films.
- polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate (TAC), cellulose acetate butyrate, cellulose acetate propionate ( CAP), cellulose esters such as cellulose acetate phthalate, cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by J
- a film made of an inorganic material or an organic material or a hybrid film combining these films may be formed on the surface of the resin film.
- Such coatings and hybrid coatings have a water vapor transmission rate (25 ⁇ 0.5 ° C., relative humidity 90 ⁇ 2% RH) measured by a method according to JIS-K-7129-1992 of 0.01 g / ( m 2 ⁇ 24 hours) or less of a barrier film (also referred to as a barrier film or the like) is preferable.
- the oxygen permeability measured by the method according to JIS-K-7126-1987 is 10 ⁇ 3 ml / (m 2 ⁇ 24 hours ⁇ atm) or less, and the water vapor permeability is 10 ⁇ 5 g / (m (2 ⁇ 24 hours) or less is preferable.
- the material for forming the barrier film as described above a material having a function of suppressing the intrusion of elements such as moisture and oxygen causing deterioration of the resin film is used.
- silicon oxide, silicon dioxide, silicon nitride, or the like can be used.
- the method for forming the barrier film is not particularly limited.
- the vacuum deposition method, the sputtering method, the reactive sputtering method, the molecular beam epitaxy method, the cluster ion beam method, the ion plating method, the plasma polymerization method, the atmospheric pressure plasma weight A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
- the atmospheric pressure plasma polymerization method described in JP-A-2004-68143 can be preferably used.
- the admittance adjusting layer 12 is a layer provided for adjusting optical characteristics such as reflectance and transmittance of the transparent conductor 10, in particular, the reflectance of the conductive layer 15. The admittance adjustment of the transparent conductor 10 by the admittance adjustment layer 12 will be described later.
- the admittance adjusting layer 12 is preferably a layer containing a dielectric material or an oxide semiconductor material.
- the material constituting the admittance adjusting layer 12 is preferably a metal oxide or a metal sulfide.
- the admittance adjusting layer 12 may include only one type of dielectric material or oxide semiconductor material, or may include two or more types.
- the admittance adjusting layer 12 preferably has a higher refractive index than the layer in contact with the admittance adjusting layer 12 on the side opposite to the side where the conductive layer 15 is provided.
- the admittance adjustment layer 12 preferably has a higher refractive index than the base material 11 on which the transparent conductor 10 is provided.
- the refractive index of the admittance adjusting layer 12 is preferably 1.8 or more, more preferably 2.1 or more and 2.5 or less. As will be described later, when the refractive index of the admittance adjusting layer 12 is higher than 1.8, the light transmittance of the transparent conductor 10 tends to increase. Further, the refractive index of the admittance adjusting layer 12 is preferably greater than the refractive index of the substrate 11 by 0.1 to 1.1 or more, and more preferably 0.4 to 1.0 or more.
- the refractive index of the admittance adjusting layer 12 is a refractive index of light having a wavelength of 510 nm, and is measured by an ellipsometer. The refractive index of the admittance adjusting layer 12 is adjusted by the material constituting the admittance adjusting layer 12, the density of the material in the admittance adjusting layer 12, and the like.
- the thickness of the admittance adjusting layer 12 is preferably 10 to 150 nm, more preferably 20 to 80 nm. If the thickness of the admittance adjusting layer 12 is less than 10 nm, it is difficult to sufficiently increase the light transmittance of the transparent conductor 10. On the other hand, when the thickness of the admittance adjusting layer 12 exceeds 150 nm, the transparency (antireflection property) of the transparent conductor 10 does not increase. The thickness of the admittance adjusting layer 12 is measured with an ellipsometer.
- the admittance adjusting layer 12 may be a layer formed by a general vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, a thermal CVD method, or the like. From the viewpoint of increasing the refractive index (density) of the admittance adjusting layer 12, a layer formed by an electron beam evaporation method or a sputtering method is preferable. In the case of the electron beam evaporation method, it is desirable to have assistance such as IAD (ion assist) in order to increase the film density.
- IAD ion assist
- the conductive layer 15 includes a metal material layer 14 mainly constituting the conductive layer 15 and a platinum group element-containing layer 13 provided adjacent to the metal material layer 14.
- the absorption of the conductive layer is determined by the total of two absorptions, absorption inherent to the metal (hereinafter referred to as intrinsic absorption) and plasmon absorption mainly due to the surface shape of the conductive layer.
- the intrinsic absorption is smaller as the conductive layer is thinner, and the plasmon absorption is smaller as the surface is smoother. Therefore, it is effective in reducing the absorption of the conductive layer that the conductive layer is as thin as possible and the surface is smooth.
- the plasmon absorption rate of the conductive layer 15 is preferably 20% or less over the entire wavelength range of 400 nm to 800 nm. Furthermore, the plasmon absorption rate of the conductive layer 15 is preferably 15% or less, more preferably 7% or less, and further preferably 5% or less. When the plasmon absorptance at the wavelength is large, the light transmittance of the conductive layer 15 is lowered. Further, if there is a region having a large plasmon absorption rate in a part of the wavelength of 400 nm to 800 nm, the transmitted light of the conductive layer 15 is easily colored.
- the platinum group element-containing layer 13 is a layer containing at least one of platinum (Pt) and palladium (Pd) provided adjacent to the metal material layer 14.
- the platinum group element-containing layer 13 is a layer formed directly on the admittance adjusting layer 12.
- the metal material constituting the metal material layer 14 becomes the admittance adjustment layer 12. It becomes difficult to move on. Further, in Pt and Pd, the interval between the growth nuclei can be narrower than the interval between the lumps formed by surface diffusion of atoms. Therefore, when the film grows starting from this growth nucleus, a flat film is likely to be formed even if the thickness is small. That is, it is possible to form the metal material layer 14 that is conductive even when the thickness is small and that is less likely to cause plasmon absorption.
- the above growth nuclei are formed of a metal that hardly diffuses on the admittance adjusting layer 12.
- a metal the above-mentioned platinum (Pt), palladium (Pd) simple substance, or a material containing at least one of Pt and Pd can be used.
- Pt and Pd only one of these may be used, or two may be used in combination.
- an alloy containing, for example, gold, cobalt, nickel, molybdenum, titanium, aluminum, chromium, nickel, or the like may be used.
- the platinum group element-containing layer 13 is difficult to diffuse on the surface of the admittance adjusting layer 12 and needs to have high affinity with the metal material constituting the metal material layer 14. Moreover, it is preferable that a dense and fine growth nucleus is obtained. For example, a desired layer (growth nucleus) can be obtained by forming the layer to be grown while being crushed using an assist such as IAD.
- the average thickness of the layer (growth nucleus) constituting the platinum group element-containing layer 13 is preferably 3 nm or less, more preferably 0.1 nm or less, and still more preferably a monoatomic layer.
- the average thickness of the layer (growth nucleus) is adjusted by the formation speed and the formation time.
- the platinum group element-containing layer 13 may be a continuous and homogeneous film, a film having a non-continuous portion in which defects or vacancies are not formed, or metal atoms are separated from each other. It may be a so-called island structure attached in a dispersed state. Preferably, the metal atoms are in a state of being attached to be separated from each other. Furthermore, it may be formed as a single layer composed solely of the platinum group element-containing layer 13 or may be a layer mixed with the metal material of the metal material layer 14 formed on the platinum group element-containing layer 13.
- the platinum group element-containing layer 13 can form a layer (growth nucleus) containing Pt and Pd having a thickness of 3 nm or less by using a sputtering method or a vapor deposition method. Alternatively, a layer containing Pt and Pd can be formed, and this layer can be dry-etched to leave a platinum group element layer (growth nucleus).
- sputtering methods examples include ion beam sputtering, magnetron sputtering, reactive sputtering, bipolar sputtering, and bias sputtering.
- the sputtering time is appropriately selected according to the average thickness of the platinum group element layer (growth nucleus) to be formed and the formation speed.
- the sputter formation rate is preferably 0.1 to 15 ⁇ / second, more preferably 0.1 to 7 ⁇ / second.
- the vapor deposition method for example, a vacuum vapor deposition method, an electron beam vapor deposition method, an ion plating method, an ion beam vapor deposition method, or the like can be used.
- the deposition time is appropriately selected according to the layer to be formed (growth nuclei) and the formation speed.
- the deposition rate is preferably 0.1 to 15 ⁇ / second, more preferably 0.1 to 7 ⁇ / second.
- the method of forming the platinum group element layer is not particularly limited.
- a vapor deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, a plasma CVD method, or a thermal CVD method, or a wet deposition method such as a plating method can be used.
- the average thickness of the platinum group element layer to be formed is preferably 3 to 15 nm, and more preferably 5 to 10 nm. If the average thickness of the platinum group element layer is less than 3 nm, the amount of metal is small, and sufficient growth nuclei may not be obtained.
- etching method of a platinum group element layer an etching method involving physical collision of an etching gas, ions, radicals or the like is used, and reactive gas etching that performs etching only by a chemical reaction is not included.
- the etching method is not particularly limited as long as it involves such physical collision, and for example, ion beam etching, reverse sputter etching, plasma etching, or the like can be used.
- ion beam etching is particularly preferable from the viewpoint that desired unevenness can be easily formed on the etched thin film (growth nucleus).
- the layer (growth nucleus) constituting the platinum group element-containing layer 13 is too thick, it is difficult to obtain a thin and smooth metal material layer 14 even if the growth nucleus is formed. Further, the metal material layer 14 formed starting from the growth nucleus of the platinum group element-containing layer 13 becomes thicker.
- the average thickness of the growth nucleus of the platinum group element-containing layer 13 is determined from the difference between the thickness of the platinum group element layer and the etching thickness of the platinum group element layer.
- the etching thickness of the platinum group element layer is the product of the etching rate and the etching time.
- the etching rate is obtained from the time until a platinum group element layer having a thickness of 50 nm separately prepared on a glass substrate is etched under the same conditions and the light transmittance after etching becomes equivalent to that of the glass substrate (approximately 0 nm thickness). .
- the average thickness of the growth nucleus of the platinum group element-containing layer 13 is adjusted by the dry etching time.
- the metal material layer 14 is a layer made of a metal material and formed adjacent to the platinum group element-containing layer 13.
- the metal contained in the metal material layer 14 is not particularly limited, and for example, silver, copper, gold, platinum group, titanium, chromium, or the like can be used.
- the metal material layer 14 may contain only one kind of these metals or two or more kinds.
- the metal material layer 14 is preferably a layer composed mainly of silver or silver (Ag) from the viewpoint of low intrinsic absorption and high electrical conductivity.
- the alloy mainly composed of silver (Ag) constituting the metal material layer 14 is preferably an alloy containing 50% by mass or more of silver.
- Examples of the alloy mainly composed of silver include silver magnesium (AgMg), silver copper (AgCu), silver palladium (AgPd), silver palladium copper (AgPdCu), and silver indium (AgIn).
- the metal material layer 14 as described above may have a configuration in which silver or an alloy layer mainly containing silver is divided into a plurality of layers as necessary.
- a method using a wet process such as a coating method, an inkjet method, a coating method, a dip method, a vapor deposition method (resistance heating, EB method, etc.), a sputtering method, a CVD method, or the like. And a method using the dry process.
- the vapor deposition method is preferably applied.
- the metal material layer 14 is formed on the platinum group element-containing layer 13, and thus has sufficient conductivity even without a high-temperature annealing treatment after the formation, etc. Alternatively, high temperature annealing treatment or the like may be performed after the formation.
- the metal material layer 14 preferably has a thickness in the range of 3 to 15 nm.
- a thickness of 15 nm or less, particularly 12 nm or less, is preferable because the absorption component or reflection component of the layer can be kept low and the light transmittance of the transparent conductor is maintained.
- the metal material layer 14 has a thickness of at least 3 nm, the conductivity of the transparent conductor 10 is ensured.
- the thickness of the metal material layer 14 is set so that the total thickness of the metal material layer 14 and the platinum group element-containing layer 13 is 15 nm or less so as not to hinder the light transmittance of the transparent conductor 10.
- the total thickness is preferably 12 nm or less.
- a total thickness of the metal material layer 14 and the platinum group element-containing layer 13 of 15 nm or less is preferable because the absorption component and the reflection component of the layer are kept low and the light transmittance of the transparent conductor 10 is maintained.
- the light transmittance of the transparent conductor 10 is further improved by setting the total thickness of the metal material layer 14 and the platinum group element-containing layer 13 to 12 nm or less.
- the conductor 15 including the platinum group element-containing layer 13 and the metal material layer 14 provided adjacent to the platinum group element-containing layer 13 as described above is covered with a protective film on the upper part of the metal material layer 14. Or another conductive layer may be laminated. In this case, it is preferable that the protective film and the conductive layer have light transmittance so as not to impair the light transmittance of the transparent conductor 10.
- the admittance adjustment layer 12 of the transparent conductor 10 has a function of adjusting the intrinsic absorption and reflectance of the conductive layer 15.
- the reflectance R of the surface of the transparent conductor 10 is determined from the optical admittance y 0 of the medium on which light is incident and the equivalent admittance Y E of the surface of the transparent conductor 10, and these relationships are expressed by the following equations. Is done.
- the reflectance R decreases as
- the optical admittance y 0 of air is 1. Therefore, the closer the equivalent admittance Y E is to 1, the closer the reflectance R of the transparent conductor 10 is. Becomes lower.
- the optical admittance y 0 of the medium the light is incident is a value determined by the refractive index of the material constituting the organic EL layer.
- the organic EL layer if having a structure in which a organic material having a refractive index of 1.8 on the transparent conductor 10, the optical admittance y 0 of the medium the light is incident becomes 1.8. Therefore, as the equivalent admittance Y E is the closer to 1.8, the reflectance of the transparent conductor 10 R is lowered.
- the optical admittance Y is obtained from the ratio (H / E) between the electric field strength and the magnetic field strength, and is usually the same as the refractive index.
- the equivalent admittance Y E is obtained from the optical admittance Y of each layer constituting the transparent conductor 10. For example, when the transparent conductor 10 is composed of one layer, the equivalent admittance Y E of the transparent conductor 10 is equal to the optical admittance Y of the layer.
- the optical admittance Y x (E x H x ) of the laminate from the first layer to the x layer is from the first layer to the (x ⁇ 1) layer. It is represented by the product of the optical admittance Y x-1 (E x-1 H x-1 ) of the laminate and a specific matrix; specifically, it is obtained by the following formula (1) or formula (2) .
- the x-th layer is a layer made of a dielectric material or an oxide semiconductor material
- ⁇ 2 ⁇ nd / ⁇
- y n (admittance of the x-th layer film)
- d is the thickness of the m-th layer film.
- ⁇ 2 ⁇ kd / ⁇
- d the thickness of the x-th layer film
- k the refractive index (imaginary part) of the film.
- the optical admittance Yx (E x H x ) of the laminate from the transparent support material to the outermost layer when the x-th layer is the outermost layer becomes the equivalent admittance Y E of the transparent conductor 10.
- FIG. 2 shows an admittance locus with a wavelength of 570 nm when the conductive layer 15 is formed directly on the substrate 11.
- FIG. 3 shows an admittance locus with a wavelength of 570 nm when the conductive layer 15 is formed on the substrate 11 via the admittance adjusting layer 12.
- This Y 2 corresponds to the equivalent admittance Y E of the transparent conductor 10. Note that the interface between the Y 1 opposite a surface opposite to the admittance adjusting layer 12 of the conductive layer 15 in the substrate 11 and the interface on the opposite side, and FIG. 3 of the conductive layer 15 in FIG. 2.
- the vertical axis (IM) is the imaginary part of the optical admittance, that is, y in the equation.
- the admittance locus shown in FIG. 2 the start point coordinates of admittance locus, an equivalent admittance Y Z of the conductive layer 15 side of the substrate 11, a admittance coordinates (x Z, y Z). Further, the equivalent admittance Y 2 of the interface of the base material 11 and the opposite side of the conductive layer 15 is admittance coordinates (x 2, y 2).
- FIG. 2 shows the case where the conductive layer 15 is directly formed on the base material
- the admittance locus shown in FIG. 3, the coordinates of the start point of the admittance locus is the interface between the equivalent admittance Y Z between the substrate 11 and the admittance adjustment layer 12, the admittance coordinates (x Z, y Z) (1.5, 0).
- the equivalent admittance Y 1 at the interface between the conductive layer 15 and the admittance adjusting layer 12 is the admittance coordinates (x 1 , y 1 ).
- the equivalent admittance Y 2 at the interface of the conductive layer 15 opposite to the admittance adjusting layer 12 is admittance coordinates (x 2 , y 2 ).
- the coordinates of the end point of the admittance locus are the equivalent admittance Y E of the transparent conductor 10.
- the distance between the admittance coordinates (x E , y E ) of the equivalent admittance Y E of the transparent conductor 10 and the admittance coordinates (x 0 , y 0 ) of the optical admittance y 0 of the medium on which light is incident is the transparent conductor 10 It is proportional to the reflectance R of the surface.
- the equivalent admittance Y E of the transparent conductor 10 is equal to the equivalent admittance Y 2 of the interface of the conductive layer 15 opposite to the admittance adjustment layer 12. Therefore, in this example, the distance between the admittance coordinates (x 2 , y 2 ) of the equivalent admittance Y 2 of the conductive layer 15 and the admittance coordinates (x 0 , y 0 ) of the optical admittance y 0 of the medium on which light is incident is The closer it is, the smaller the reflectance R of the transparent conductor 10 is.
- the organic layer such as an organic EL element
- admittance coordinates (x 0, y 0) of the optical admittance y 0 (1.8, 0).
- the reflectance R based on the relational expression between the reflectance R, the equivalent admittance Y E , and the optical admittance y 0 of the medium on which light is incident, the coordinates (x E , y E ) of the equivalent admittance Y E are incident on the light. If it is on the right side of the admittance coordinates (x 0 , y 0 ) of the medium to be reflected, the reflectance R tends to be small.
- x-coordinate x E of the equivalent admittance Y E that is, x-coordinate x 2 of the equivalent admittance Y 2 of the conductive layer 15 is preferably larger than the x-coordinate x 0 of the optical admittance y 0 of the medium the light is incident .
- the optical admittances at the wavelength of 570 nm of both main surfaces of the conductive layer 15 are Y 1 and Y 2 .
- at least one of x 1 and x 2 is 1.6 or more.
- both x 1 and x 2 are 1.6 or more. That is, the horizontal coordinate of at least one of Y 1 (x 1 , y 1 ) and Y 2 (x 2 , y 2 ) in the admittance locus in FIG. 3 is 1.6 or more. The reason is as follows.
- the metal material constituting the conductive layer 15 generally has a large value of the imaginary part of the optical admittance, and when the metal material is laminated, the admittance locus greatly moves in the vertical axis (imaginary part) direction.
- the optical admittance Y 2 of the conductive layer 15 (equivalent admittance Y E of the transparent conductor 10) becomes the admittance coordinate of the optical admittance y 0 of the medium on which light is incident. Move away from (x 0 , y 0 ). For this reason, the optical admittance Y 2 of the conductive layer 15 is changed to the optical admittance y 0 of the medium on which light is incident, for example, the admittance coordinates (1, 0) of air or the admittance coordinates (1.8, 0) of organic material. It becomes difficult to get closer.
- the start point (x z , y z ) of the admittance locus which is the admittance Y 1 of the interface on the base material 11 side of the conductive layer 15, hardly moves from the admittance coordinates (1.5, 0) of the base material 11. It is difficult for the admittance trajectory to be symmetric about the horizontal axis of the graph.
- admittance locus and not about the horizontal axis line symmetry in other wavelengths (other than 570 nm), admittance locus liable shake, the coordinates of the equivalent admittance Y E is less likely to be constant. For this reason, a wavelength region in which the antireflection effect is not sufficient tends to occur.
- the admittance Y 1 of the conductive layer 15 is caused by the admittance adjusting layer 12.
- Admittance coordinates (x 1 , y 1 ) greatly move in the positive direction of the horizontal axis (real part) and the vertical axis (imaginary part) from the start point (x A , y A ) of the admittance locus.
- the admittance coordinates of admittance Y 1 of the conductive layer 15 (x 1, y 1) is the starting point of the admittance locus From (x z , y z ), it moves greatly in the positive direction of the imaginary part.
- the admittance locus of the conductive layer 15 tends to be line symmetric about the horizontal axis of the graph. Therefore, in other wavelengths (other than 570 nm), admittance locus tends linear symmetry around the horizontal axis of the graph, the coordinates of the equivalent admittance Y E of each wavelength is approximately the same.
- the value of the equivalent admittance Y E tends to approach the admittance coordinates (x 0 , y 0 ) of the optical admittance y 0 of the medium on which light is incident. This indicates that a sufficient antireflection effect can be obtained at any wavelength.
- the conductive layer 15 When a metal material is used as the conductive layer 15, two sources of light absorption generated in the conductive layer 15 can be considered. One is absorption inherent in the metal material, and the other is plasmon absorption resulting from the structure of the conductive layer 15. By keeping the admittance of the conductive layer 15 high, the inherent absorption of the metal material can be minimized.
- the following relational expression holds between the admittance Y at the interface of each layer and the electric field strength E existing in each layer.
- the admittance adjustment layer 12 adjusting the coordinates x 1 of the real part of the admittance Y 1 of the conductive layer 15 such that 1.6 or more, admittance Y 1 of the conductive layer 15 is increased, the light by the conductive layer 15 Less absorption.
- the admittance adjustment layer 12 the real part coordinate x 2 of the admittance Y 2 of the conductive layer 15 when adjusted to 1.6 or more even, admittance Y 2 of the conductive layer 15 is increased, the light by the conductive layer 15 Less absorption. Also.
- the admittance locus of the conductive layer 15 is likely to be line symmetric about the horizontal axis of the graph, and the electric field of the conductive layer 15 is reduced, so that light absorption by the conductive layer 15 is suppressed.
- At least one of x 1 and x 2 is preferably 1.6 or more and 7.0 or less. More preferably, x 1 and x 2 is both 1.6 to 7.0. More preferably, x 1 and / or x 2 is 1.8 to 5.5, is preferably further 2.0 to 3.0.
- x 1 is 1.6 or more.
- x 1 is adjusted by the refractive index of the admittance adjusting layer 12, the thickness of the admittance adjusting layer 12, and the like.
- x 2 is 1.3 to 5.5, further preferably 1.5 to 3.5.
- x 2 is the refractive index and the material of the conductive layer 15 is adjusted by the thickness and the like of the conductive layer 15.
- of the difference between x 1 and x 2 is preferably 1.5 or less, more preferably 1.0 or less, and even more preferably 0.8 or less. is there.
- / x cross is preferably smaller than 0.5, more preferably, when the coordinate Ycross (x cross , 0) of the intersection point between the admittance locus of the conductive layer 15 and the horizontal axis is used. Is 0.3 or less, more preferably 0.2 or less.
- ) is preferably 0.9 or less, more preferably 0.6 or less, and still more preferably 0.3 or less.
- the transparent conductor 10 configured as described above has a configuration in which a conductive layer 15 in which a metal material layer 14 is formed adjacent to the platinum group element-containing layer 13 is provided.
- a conductive layer 15 in which a metal material layer 14 is formed adjacent to the platinum group element-containing layer 13 is provided.
- the metal atoms constituting the metal material layer 14 interact with Pt and Pd constituting the platinum group element containing layer 13.
- the diffusion distance of the metal atoms on the surface of the platinum group element-containing layer 13 is reduced, and aggregation of the metal material is suppressed.
- the metal material layer 14 that is easily isolated in an island shape by growth of the nuclear growth type (Volumer-Weber: VW type) is grown as a single-layer growth type (Frank-van der Merwe: FM type). It will be formed by. Therefore, the thin conductive layer 15 having a uniform thickness can be obtained.
- the transparent conductor 10, the real part x 1 at the interface of the optical admittance Y 1 of the conductive layer 15, the real part x 2 optical admittance Y 2 is the admittance adjustment layer 12, adjusted to be 1.6 or more Has been.
- the admittance at the interface of the conductive layer 15 with the admittance adjusting layer 12 reflection of the transparent conductor 10 can be suppressed, and light transmittance can be improved.
- FIG. 4 the schematic block diagram (sectional drawing) of the transparent conductor of 2nd Embodiment is shown.
- the transparent conductor 20 of the second embodiment includes only a first admittance adjustment layer 21 and a second admittance adjustment layer 22 as the admittance adjustment layer 12. Different from the transparent conductor 10 of the embodiment.
- the detailed description which overlaps about the component similar to 1st Embodiment is abbreviate
- the transparent conductor 20 includes a first admittance adjustment layer 21 and a second admittance adjustment layer 22 as the admittance adjustment layer 12, and further includes a conductive layer 15.
- the conductive layer 15 includes a metal material layer 14 and a platinum group element-containing layer 13 formed at a position adjacent to the metal material layer 14. That is, in the conductive layer 15, the platinum group element-containing layer 13 is sandwiched between the metal material layer 14 and the admittance adjusting layer 12.
- a transparent conductor 20 composed of the second admittance adjustment layer 22, the first admittance adjustment layer 21, the platinum group element-containing layer 13, and the conductive layer 15 is formed on the substrate 11.
- the transparent conductor 20 has a configuration in which the second admittance adjustment layer 22, the first admittance adjustment layer 21, the platinum group element-containing layer 13, and the metal material layer 14 are laminated on the base material 11 in this order.
- the platinum group element-containing layer 13 is sandwiched between the first admittance adjusting layer 21 and the metal material layer 14.
- the platinum group element-containing layer 13 and the metal material layer 14 constituting the conductive layer 15 have the same configuration as in the first embodiment.
- the first admittance adjustment layer 21 can have the same configuration as the admittance adjustment layer of the transparent conductor according to the first embodiment described above. Therefore, the detailed description of the configuration of the first admittance adjusting layer 21 and the conductive layer 15, the platinum group element-containing layer 13, and the metal material layer 14 formed thereon is omitted.
- the second admittance adjustment layer 22 is a layer provided on the side where the conductive layer 15 is not formed, out of the two layers constituting the admittance adjustment layer 12. That is, in the admittance adjustment layer 12, the first admittance adjustment layer 21 is provided on the side where the conductive layer 15 is formed, and the second admittance adjustment layer 22 is provided on the side opposite to the side where the conductive layer 15 is formed. ing.
- the second admittance adjustment layer 22 is a layer having a lower refractive index than the first admittance adjustment layer 21.
- the second admittance adjusting layer 22 preferably has a refractive index lower than that of the first admittance adjusting layer 21 by 0.2 or more, particularly at a wavelength of 550 nm.
- the second admittance adjusting layer 22 is made of, for example, a material having a low refractive index and light transmittance.
- Poly (1,1,1,3,3,3-hexafluoroisopropyl methacrylate): n 1.39
- the thickness of the second admittance adjusting layer 22 is preferably 40 to 200 nm, more preferably 50 to 180 nm. When the thickness of the admittance adjusting layer 12 is less than 40 nm or exceeds 200 nm, it is difficult to sufficiently increase the light transmittance of the transparent conductor 20. The thickness of the admittance adjusting layer 12 is measured with an ellipsometer.
- FIG. 5 shows an admittance locus of the transparent conductor 20 at a wavelength of 570 nm.
- Let the admittance be Y 2 x 2 + iy 2 .
- the admittance coordinates (x 2 , y 2 ) of the optical admittance Y 2 of the conductive layer 15 correspond to the equivalent admittance Y E of the transparent conductor 20.
- the admittance locus shown in FIG. 5 the coordinates of the start point of the admittance locus, an equivalent admittance Y Z of the conductive layer 15 side of the substrate 11, a admittance coordinates (x Z, y Z).
- the transparent conductor 20 includes the second admittance adjustment layer 22 having a refractive index lower than that of the first admittance adjustment layer 21, so that the admittance locus is determined from the admittance coordinates (x Z , y Z ) on the horizontal axis (real part). ) To the point W in the negative direction. The moved point W corresponds to the optical admittance at the interface between the first admittance adjustment layer 21 and the second admittance adjustment layer 22.
- the admittance locus of the transparent conductor 20 can do. Further, the admittance locus of the conductive layer 15 can be brought close to line symmetry about the horizontal axis of the graph.
- the action of the first admittance adjusting layer 21 on the transparent conductor 20 is the same as the action of the admittance adjusting layer on the transparent conductor described in the first embodiment.
- the admittance locus moves in the negative direction on the horizontal axis (imaginary part). Move in the negative direction.
- the admittance coordinates (x 1 , y 1 ) of the optical admittance Y 1 of the conductive layer 15 in the positive direction and the optical are compared with the case of the above-described first embodiment that does not include the second admittance adjustment layer 22. Both admittance coordinates (x 2 , y 2 ) of admittance Y 2 move in the negative direction.
- the optical admittance Y 2 of the conductive layer 15 is changed to the optical admittance y 0 of the medium on which light is incident, for example, the admittance coordinate (1, 0) of air or the admittance coordinate (1.8, 0) of organic material. You can get closer.
- the value of the equivalent admittance Y E is, light is easily accessible to the admittance coordinates of the optical admittance y 0 of the medium which enters (x 0, y 0), to reduce the reflectivity of the transparent conductor 20, the light permeability Can be improved. Further, the original absorption of the metal material can be minimized by keeping the admittance of the conductive layer 15 high.
- the admittance adjusting layer 12 when the admittance adjusting layer 12 is formed of a plurality of layers, the degree of freedom in design is improved by appropriately combining materials and thicknesses constituting the admittance adjusting layer 12. For this reason, compared with the case where the admittance adjusting layer is formed as a single layer, the optical admittances Y 1 and Y 2 of the conductive layer 15 can be easily adjusted, and there is a range in which the optical admittances Y 1 and Y 2 can be optimized. spread. Therefore, the light transmittance of the transparent conductor can be improved by forming the admittance adjusting layer 12 from a plurality of layers like the first admittance adjusting layer 21 and the second admittance adjusting layer 22.
- FIG. 6 is a cross-sectional configuration diagram of the organic electroluminescent element of this embodiment. The configuration of the organic electroluminescent element will be described below based on this figure.
- An organic electroluminescent element 30 shown in FIG. 6 is provided on a base material 11 that is a transparent substrate, and in order from the base material 11 side, a transparent conductor 20 that serves as an anode, a light emitting functional layer 16, and a counter electrode that serves as a cathode.
- the electrode 17 is laminated.
- the transparent conductor 20 the transparent conductor 20 of the first embodiment described above is used.
- the organic electroluminescent element 30 is configured as a bottom emission type in which generated light (hereinafter referred to as emitted light h) is extracted from at least the substrate 11 side.
- the overall layer structure of the organic electroluminescent element 30 is not limited to the above, and may be a general layer structure.
- the transparent conductor 20 is disposed on the anode (ie, anode) side, and the metal material layer 14 of the conductive layer 15 mainly functions as an anode, while the counter electrode 17 functions as a cathode (ie, cathode).
- the light emitting functional layer 16 includes [hole injection layer 16a / hole transport layer 16b / light emission layer 16c / electron transport layer 16d / electron injection layer 16e] in this order on the transparent conductor 20 as an anode.
- the laminated structure can be illustrated, it has the light emitting layer 16c comprised among these at least using the organic material.
- the hole injection layer 16a and the hole transport layer 16b may be provided as a hole transport / injection layer having a hole transport property and a hole injection property.
- the electron transport layer 16d and the electron injection layer 16e may be provided as a single layer having electron transport properties and electron injection properties.
- the electron injection layer 16e may be made of an inorganic material.
- the light emitting functional layer 16 may be laminated with a hole blocking layer, an electron blocking layer, or the like as necessary.
- the light emitting layer 16c has each color light emitting layer for generating light emission in each wavelength region, and each of these color light emitting layers is laminated through a non-light emitting intermediate layer to form a light emitting layer unit. Also good.
- the intermediate layer may function as a hole blocking layer and an electron blocking layer.
- the counter electrode 17 as a cathode may also have a laminated structure as required. In such a configuration, only a portion where the light emitting functional layer 16 is sandwiched between the transparent conductor 20 and the counter electrode 17 becomes a light emitting region in the organic electroluminescent element 30.
- an auxiliary electrode may be provided in contact with the conductive layer 15 of the transparent conductor 20 for the purpose of reducing the resistance of the transparent conductor 20.
- the details of the main layers for constituting the organic electroluminescent element 30 described above are as follows: the substrate 11, the transparent conductor 20, the counter electrode 17, the light emitting layer 16 c of the light emitting functional layer 16, and other layers of the light emitting functional layer 16. And the auxiliary electrode will be described in this order. Then, the manufacturing method of the organic electroluminescent element 30 is demonstrated.
- the base material 11 is made of a transparent material having light permeability among the base materials on which the transparent conductor 20 of the first embodiment shown in FIG. 1 is provided.
- the transparent conductor 20 is the transparent conductor 20 of the above-described embodiment, and from the substrate 11 side, the second admittance adjustment layer 22, the first admittance adjustment layer 21, the platinum group element-containing layer 13, and the conductive layer 15 are used. Is a configuration formed in this order.
- the conductive layer 15 constituting the transparent conductor 20 is a substantial anode.
- the counter electrode 17 is a conductive layer that functions as a cathode for supplying electrons to the light emitting functional layer 16, and a metal, an alloy, an organic or inorganic conductive compound, and a mixture thereof are used. Specifically, gold, aluminum, silver, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, indium, lithium / aluminum mixture, rare earth metal, ITO, ZnO, TiO 2 and oxide semiconductors such as SnO 2 .
- the counter electrode 17 can be produced by forming a thin layer of these conductive materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the counter electrode 17 is several hundred ⁇ / sq. The following is preferable, and the thickness is usually selected in the range of 5 nm to 5 ⁇ m, preferably 5 nm to 200 nm.
- the light emitting layer 16c used for the organic electroluminescent element of this embodiment contains, for example, a phosphorescent compound as a light emitting material.
- the light emitting layer 16c is a layer that emits light by recombination of electrons injected from the electrode or the electron transport layer 16d and holes injected from the hole transport layer 16b, and the light emitting portion of the light emitting layer 16c. Even within the layer, it may be an interface with an adjacent layer in the light emitting layer 16c.
- the configuration of the light emitting layer 16c is not particularly limited as long as the light emitting material included satisfies the light emission requirements. Moreover, there may be a plurality of layers having the same emission spectrum and emission maximum wavelength. In this case, it is preferable to have a non-light emitting intermediate layer (not shown) between the light emitting layers 16c.
- the total thickness of the light emitting layer 16c is preferably in the range of 1 to 100 nm, and more preferably 1 to 30 nm because it can be driven at a lower voltage.
- the sum total of the thickness of the light emitting layer 16c is a thickness also including the said intermediate
- the thickness of each light emitting layer is preferably adjusted to a range of 1 to 50 nm, and more preferably adjusted to a range of 1 to 20 nm.
- the plurality of stacked light emitting layers correspond to the respective emission colors of blue, green, and red, there is no particular limitation on the relationship between the thicknesses of the blue, green, and red light emitting layers.
- the light emitting layer 16c as described above can be formed of a light emitting material or a host compound, which will be described later, by a known thin film forming method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink jet method.
- a known thin film forming method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink jet method.
- the light emitting layer 16c may be a mixture of a plurality of light emitting materials, or a phosphorescent light emitting material and a fluorescent light emitting material (also referred to as a fluorescent dopant or a fluorescent compound) may be mixed and used in the same light emitting layer 16c.
- the structure of the light emitting layer 16c preferably includes a host compound (also referred to as a light emitting host) and a light emitting material (also referred to as a light emitting dopant compound or a guest material) and emits light from the light emitting material.
- a host compound also referred to as a light emitting host
- a light emitting material also referred to as a light emitting dopant compound or a guest material
- the host compound contained in the light emitting layer 16c As the host compound contained in the light emitting layer 16c, a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C.) of less than 0.1 is preferable. Furthermore, the compound whose phosphorescence quantum yield is less than 0.01 is preferable.
- the host compound preferably has a volume ratio in the layer of 50% or more among the compounds contained in the light emitting layer 16c.
- the host compound a known host compound may be used alone, or a plurality of types may be used. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic electroluminescence device 30 can be made highly efficient. In addition, by using a plurality of kinds of light emitting materials described later, it is possible to mix different light emission, thereby obtaining an arbitrary light emission color.
- the host compound used may be a conventionally known low molecular compound, a high molecular compound having a repeating unit, or a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (evaporation polymerizable light emitting host). .
- Tg glass transition temperature
- the host compound applicable to the organic electroluminescence device include compounds H1 to H79 described in paragraphs [0163] to [0178] of JP2013-4245A.
- Compounds H1 to H79 described in paragraphs [0163] to [0178] of JP2013-4245A are incorporated in the present specification.
- Luminescent material examples of the light-emitting material that can be used in the organic electroluminescent element of this embodiment include phosphorescent compounds (also referred to as phosphorescent compounds and phosphorescent materials).
- a phosphorescent compound is a compound in which light emission from an excited triplet is observed. Specifically, a phosphorescent compound emits phosphorescence at room temperature (25 ° C.), and a phosphorescence quantum yield of 0.01 at 25 ° C. Although defined as the above compounds, the preferred phosphorescence quantum yield is 0.1 or more.
- the phosphorescent quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, when the phosphorescent compound is used in this example, the phosphorescence quantum yield (0.01 or more) is achieved in any solvent. It only has to be done.
- phosphorescent compounds There are two types of light emission principles of phosphorescent compounds. One is that recombination of carriers occurs on the host compound to which carriers are transported to generate an excited state of the host compound, and this energy is transferred to the phosphorescent compound to obtain light emission from the phosphorescent compound.
- the other is a carrier trap type in which the phosphorescent compound becomes a carrier trap, and carriers are recombined on the phosphorescent compound to emit light from the phosphorescent compound. In either case, it is a condition that the excited state energy of the phosphorescent compound is lower than the excited state energy of the host compound.
- the phosphorescent compound can be appropriately selected and used from known materials used for the light emitting layer 16c of a general organic electroluminescent device, and preferably a group 8-10 metal in the periodic table of elements is used. It is a complex compound. More preferred are iridium compounds, osmium compounds, platinum compounds (platinum complex compounds), and rare earth complexes, and most preferred are iridium compounds.
- At least one light emitting layer 16c may contain two or more types of phosphorescent compounds, and the concentration ratio of the phosphorescent compounds in the light emitting layer 16c is the light emitting layer 16c. It may change in the thickness direction.
- the phosphorescent compound is preferably 0.1% by volume or more and less than 30% by volume with respect to the total amount of the light emitting layer 16c.
- the general formulas (4), (5), and (6) described in paragraphs [0185] to [0235] of JP2013-4245A can be used.
- exemplary compounds can be preferably mentioned.
- Ir-46, Ir-47, and Ir-48 are shown below.
- Compounds represented by general formula (4), general formula (5) and general formula (6) described in paragraphs [0185] to [0235] of JP2013-4245A, and exemplified compounds (Pt-1 ⁇ Pt-3, Os-1, Ir-1 ⁇ Ir-45) are incorporated herein.
- phosphorescent compounds are, for example, OrganicOrLetters magazine vol.3 No.16 2579-2581 (2001), Inorganic Chemistry, Vol.30, No.8 1685-1687. (1991), J. Am. Chem. Soc., 123 4304 (2001), Inorganic Chemistry, Vol. 40, No. 7, 704 1704-1711 (2001), Inorganic Chemistry, Vol. 41 No. 12 3055-3066 (2002), New Journal of ⁇ Chemistry., 26261171 (2002), European Journal of Organic Chemistry, Vol.4 695-709 (2004), further described in these documents Can be synthesized by applying a method such as the reference.
- Fluorescent materials include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes Examples thereof include dyes, polythiophene dyes, and rare earth complex phosphors.
- injection layer hole injection layer, electron injection layer
- the injection layer is a layer provided between the electrode and the light emitting layer 16c in order to lower the driving voltage and improve the light emission luminance.
- the injection layer can be provided as necessary.
- the hole injection layer 16a is disposed between the anode and the light emitting layer 16c or the hole transport layer 16b, and the electron injection layer 16e is disposed between the cathode and the light emitting layer 16c or the electron transport layer 16d.
- the details of the hole injection layer 16a are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069, and the like.
- Specific examples thereof include phthalocyanine typified by copper phthalocyanine.
- Examples thereof include a layer, an oxide layer typified by vanadium oxide, an amorphous carbon layer, and a polymer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
- the details of the electron injection layer 16e are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like, and specifically represented by strontium, aluminum and the like.
- Examples thereof include a metal layer, an alkali metal halide layer typified by potassium fluoride, an alkaline earth metal compound layer typified by magnesium fluoride, and an oxide layer typified by molybdenum oxide.
- the electron injection layer 16e is desirably a very thin layer, and its thickness is preferably in the range of 1 nm to 10 ⁇ m, although it depends on the material.
- the hole transport layer 16b is made of a hole transport material having a function of transporting holes, and in a broad sense, the hole injection layer 16a and the electron blocking layer are also included in the hole transport layer 16b.
- the hole transport layer 16b can be provided as a single layer or a plurality of layers.
- the hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic.
- triazole derivatives oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives
- Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
- hole transport material those described above can be used, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
- aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminoph
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
- p-type hole transport materials as described in JP-A-11-251067, J. Huang et al., Applied Physics Letters, 80 (2002), p. 139 can be used. . These materials are preferably used because a highly efficient light-emitting element can be obtained.
- the hole transport layer 16b is formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an inkjet method, or an LB method. be able to.
- the thickness of the hole transport layer 16b is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the hole transport layer 16b may have a single layer structure composed of one or more of the above materials.
- the electron transport layer 16d is made of a material having a function of transporting electrons. In a broad sense, the electron transport layer 16e and a hole blocking layer (not shown) are also included in the electron transport layer 16d.
- the electron transport layer 16d can be provided as a single layer structure or a stacked structure of a plurality of layers.
- an electron transport material (also serving as a hole blocking material) constituting the layer portion adjacent to the light emitting layer 16c in the electron transport layer 16d having a single layer structure and the electron transport layer 16d having a multilayer structure
- electrons injected from the cathode are used. What is necessary is just to have the function to transmit to the light emitting layer 16c.
- Such a material can be arbitrarily selected from conventionally known compounds. Examples include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane, anthrone derivatives, and oxadiazole derivatives.
- a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group are also used as the material for the electron transport layer 16d.
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq3), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, A metal complex replaced with Cu, Ca, Sn, Ga, or Pb can also be used as the material of the electron transport layer 16d.
- metal-free or metal phthalocyanine or the terminal thereof is substituted with an alkyl group or a sulfonic acid group, it can be preferably used as a material for the electron transport layer 16d.
- a distyrylpyrazine derivative exemplified also as the material of the light emitting layer 16c can be used as the material of the electron transport layer 16d, and n-type-Si, n-type, like the hole injection layer 16a and the hole transport layer 16b.
- An inorganic semiconductor such as -SiC can also be used as the material of the electron transport layer 16d.
- the electron transport layer 16d can be formed by thinning the above material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- the thickness of the electron transport layer 16d is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the electron transport layer 16d may have a single layer structure made of one or more of the above materials.
- the electron transport layer 16d preferably contains potassium, a potassium compound, or the like.
- the potassium compound for example, potassium fluoride can be used.
- Examples of the material (electron transporting compound) for the electron transport layer 16d include, for example, the general formulas (1), (2), and paragraphs [0057] to [0148] described in JP2013-4245A.
- compounds 112 to 134 are shown below.
- the compounds represented by general formula (1), general formula (2), and general formula (3) described in paragraphs [0057] to [0148] of JP2013-4245A are incorporated in the present specification. .
- Blocking layer hole blocking layer, electron blocking layer
- the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. There is a hole blocking (hole blocking) layer.
- the hole blocking layer has the function of the electron transport layer 16d in a broad sense.
- the hole blocking layer is made of a hole blocking material that has a function of transporting electrons but has a very small ability to transport holes, and recombines electrons and holes by blocking holes while transporting electrons. Probability can be improved.
- the structure of the electron carrying layer 16d mentioned later can be used as a hole-blocking layer as needed.
- the hole blocking layer is preferably provided adjacent to the light emitting layer 16c.
- the electron blocking layer has the function of the hole transport layer 16b in a broad sense.
- the electron blocking layer is made of a material that has a function of transporting holes but has a very small ability to transport electrons, and improves the probability of recombination of electrons and holes by blocking electrons while transporting holes. be able to.
- the structure of the positive hole transport layer 16b mentioned later can be used as an electron blocking layer as needed.
- the thickness of the blocking layer is preferably 3 to 100 nm, and more preferably 5 to 30 nm.
- the auxiliary electrode is provided for the purpose of reducing the resistance of the transparent conductor 20 and is provided in contact with the conductive layer 15 of the transparent conductor 20.
- the material for forming the auxiliary electrode is preferably a metal having low resistance such as gold, platinum, silver, copper, or aluminum. Since these metals have low light transmittance, a pattern is formed in a range not affected by extraction of the emitted light h from the light extraction surface. Examples of a method for forming such an auxiliary electrode include a vapor deposition method, a sputtering method, a printing method, an ink jet method, and an aerosol jet method.
- the line width of the auxiliary electrode is preferably 50 ⁇ m or less from the viewpoint of the aperture ratio for extracting light, and the thickness of the auxiliary electrode is preferably 1 ⁇ m or more from the viewpoint of conductivity.
- the sealing material covers the organic electroluminescent element 30, is a plate-shaped (film-shaped) sealing member, and may be fixed to the substrate 11 side by an adhesive, and is a sealing layer. May be.
- This sealing material is provided so as to cover at least the light emitting functional layer 16 in a state where the terminal portions of the transparent conductor 20 and the counter electrode 17 in the organic electroluminescent element 30 are exposed.
- an electrode may be provided in the sealing material so that the transparent conductor 20 of the organic electroluminescent element 30 and the terminal portion of the counter electrode 17 are electrically connected to this electrode.
- the plate-like (film-like) sealing material examples include a glass substrate and a polymer substrate, and these substrate materials may be used in the form of a thinner film.
- the glass substrate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
- the polymer substrate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone.
- a polymer substrate in the form of a thin film can be preferably used as a sealing material.
- the polymer substrate in the form of a film has an oxygen permeability measured by a method according to JIS-K-7126-1987 of 1 ⁇ 10 ⁇ 3 ml / (m 2 ⁇ 24 h ⁇ atm) or less, and JIS-K.
- the water vapor permeability (25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)% RH) measured by a method according to ⁇ 7129-1992 is 1 ⁇ 10 ⁇ 3 g / (m 2 ⁇ 24 h) or less It is preferable that
- the above substrate material may be processed into a concave plate shape and used as a sealing material.
- the above-described substrate member is subjected to processing such as sandblasting or chemical etching, and is formed into a concave shape.
- the present invention is not limited to this, and a metal material may be used.
- the metal material include one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
- the adhesive for fixing such a plate-shaped sealing material to the base material 11 side is for sealing the organic electroluminescent element 30 sandwiched between the sealing material and the base material 11.
- used as a sealant used as a sealant.
- Specific examples of such an adhesive include photocuring and thermosetting adhesives having a reactive vinyl group of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing types such as 2-cyanoacrylates. Mention may be made of adhesives.
- examples of such an adhesive include epoxy-based heat and chemical curing types (two-component mixing).
- hot-melt type polyamide, polyester, and polyolefin can be mentioned.
- a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
- the organic material which comprises the organic electroluminescent element 30 may deteriorate with heat processing. For this reason, it is preferable to use an adhesive that can be adhesively cured from room temperature to 80 ° C. Further, a desiccant may be dispersed in the adhesive.
- Application of the adhesive to the bonding portion between the sealing material and the base material 11 may be performed using a commercially available dispenser or may be printed like screen printing.
- this gap when a gap is formed between the plate-shaped sealing material, the base material 11 and the adhesive, this gap has an inert gas such as nitrogen or argon or fluorinated carbonization in the gas phase and the liquid phase. It is preferable to inject an inert liquid such as hydrogen or silicon oil. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
- an inert gas such as nitrogen or argon or fluorinated carbonization in the gas phase and the liquid phase. It is preferable to inject an inert liquid such as hydrogen or silicon oil. A vacuum is also possible.
- a hygroscopic compound can also be enclosed inside.
- hygroscopic compound examples include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate).
- metal oxides for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide
- sulfates for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate.
- metal halides eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.
- perchloric acids eg perchloric acid Barium, magnesium perchlorate, and the like
- anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
- a sealing layer is used as the sealing material, the light emitting functional layer 16 in the organic electroluminescent element 30 is completely covered and the terminal portions of the transparent conductor 20 and the counter electrode 17 in the organic electroluminescent element 30 are exposed.
- a sealing layer is provided on the substrate 11.
- Such a sealing layer is composed of an inorganic material or an organic material.
- it is made of a material having a function of suppressing entry of a substance that causes deterioration of the light emitting functional layer 16 in the organic electroluminescent element 30 such as moisture and oxygen.
- a material for example, an inorganic material such as silicon oxide, silicon dioxide, or silicon nitride is used.
- a layered structure may be formed by using a layer made of an organic material together with a layer made of these inorganic materials.
- the method for forming these layers is not particularly limited.
- vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
- a protective layer or a protective plate may be provided between the substrate 11 and the organic electroluminescent element EL and a sealing material.
- This protective layer or protective plate is for mechanically protecting the organic electroluminescent element EL, and particularly when the sealing material is a sealing layer, mechanical protection for the organic electroluminescent element EL is prevented. Since it is not sufficient, it is preferable to provide such a protective layer or protective plate.
- a glass plate, a polymer plate, a thinner polymer film, a metal plate, a thinner metal film, a polymer material film or a metal material film is applied.
- a polymer film because it is lightweight and thin.
- the second admittance adjusting layer 22 is formed on the substrate 11 to a thickness of about 90 nm.
- the first admittance adjusting layer 21 is formed to a thickness of about 40 nm.
- a platinum group element-containing layer 13 is formed on the first admittance adjusting layer 21 to a thickness of about 1 nm, and then the metal material layer 14 is formed to have a thickness of 3 nm to 15 nm.
- the platinum group element-containing layer 13 and the metal material layer 14 can be formed by the method described in the first embodiment.
- the anode-side transparent conductor 20 is produced on the base material 11.
- the formation of the first admittance adjusting layer 21 and the second admittance adjusting layer 22 includes a vapor deposition method (EB method and the like), a sputtering method, and the like. From the point that a dense layer is easily obtained, an ion-assisted EB vapor deposition method or a sputtering method is used. Is particularly preferred.
- a hole injection layer 16a, a hole transport layer 16b, a light emitting layer 16c, an electron transport layer 16d, and an electron injection layer 16e are formed in this order, and the light emitting functional layer 16 is formed.
- the formation of each of these layers includes a spin coating method, a casting method, an ink jet method, a vapor deposition method, a sputtering method, a printing method, etc., but it is easy to obtain a homogeneous layer, and pinholes are difficult to generate. Vacuum deposition or spin coating is particularly preferred. Further, different formation methods may be applied for each layer.
- the vapor deposition conditions vary depending on the type of compound used, but generally the boat heating temperature storing the compound is 50 ° C. to 450 ° C., and the degree of vacuum is 10 ⁇ 6 Pa to 10 ⁇ . It is desirable to select each condition as appropriate within a range of 2 Pa, a deposition rate of 0.01 nm / second to 50 nm / second, a substrate temperature of ⁇ 50 ° C. to 300 ° C., and a thickness of 0.1 ⁇ m to 5 ⁇ m.
- the counter electrode 17 serving as a cathode is formed by an appropriate forming method such as a vapor deposition method or a sputtering method.
- a pattern is formed in a shape in which terminal portions are drawn out from the upper side of the light emitting functional layer 16 to the periphery of the base material 11 while maintaining the insulating state with respect to the transparent conductor 20 by the light emitting functional layer 16.
- the organic electroluminescent element 30 is obtained. Thereafter, a sealing material that covers at least the light emitting functional layer 16 is provided in a state in which the terminal portions of the transparent conductor 20 and the counter electrode 17 in the organic electroluminescent element 30 are exposed. At this time, the sealing material is bonded to the substrate 11 side using an adhesive, and the organic electroluminescent element 30 is sealed between the sealing material and the substrate 11.
- a desired organic electroluminescent element 30 is obtained on the substrate 11.
- a forming method may be applied. At that time, it is necessary to consider that the work is performed in a dry inert gas atmosphere.
- the conductive layer 15 as an anode has a positive polarity
- the counter electrode 17 as a cathode has a negative polarity
- the voltage is 2 V or more and 40 V.
- Luminescence can be observed when the following is applied.
- An alternating voltage may be applied.
- the alternating current waveform to be applied may be arbitrary.
- the configuration in which the transparent conductor according to the second embodiment is applied to the bottom emission type organic electroluminescence device has been described.
- an organic electric field using the transparent conductor according to the first embodiment is described.
- a light-emitting element can also be configured.
- the organic electroluminescent element to which these transparent conductors are applied is not limited to the bottom emission type, for example, a top emission type configuration in which light is extracted from the counter electrode side, or a dual emission type configuration in which light is extracted from both sides. It is good.
- the organic electroluminescent device is a top emission type
- a transparent material is used for the counter electrode, and an opaque base material having reflectivity is used instead of the base material of the transparent conductor, and the emitted light h is reflected by the substrate. It is also possible to take out from the counter electrode side.
- the organic electroluminescent element is a double-sided light emitting device, a transparent material may be used for the counter electrode in the same manner as the transparent conductor, and the emitted light h may be extracted from both sides.
- the organic electroluminescent element of the third embodiment described above is transparent in addition to the configuration using the transparent conductor as an anode.
- the present invention can also be applied to a configuration in which a conductor is a cathode.
- the organic electroluminescent element of each embodiment mentioned above is a surface light emitter as mentioned above, it can be used as various light emission sources.
- lighting devices such as home lighting and interior lighting, backlights for clocks and liquid crystals, lighting for billboard advertisements, light sources for traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, Examples include, but are not limited to, a light source of an optical sensor, and can be effectively used as a backlight of a liquid crystal display device combined with a color filter and a light source for illumination.
- the organic electroluminescence device of each embodiment may be used as a kind of lamp for illumination or exposure light source, or a projection device for projecting an image, or directly viewing a still image or a moving image. It may be used as a type of display device (display).
- display display
- the light emitting surface may be enlarged by so-called tiling, in which light emitting panels provided with organic electroluminescent elements are joined together in a plane.
- the drive method when used as a display device for moving image reproduction may be either a simple matrix (passive matrix) method or an active matrix method.
- a color or full-color display device can be produced by using two or more organic electroluminescent elements of the present invention having different emission colors.
- Lighting device (fourth embodiment)> [Lighting device-1]
- a fourth embodiment of the present invention will be described.
- 4th Embodiment demonstrates the illuminating device using the organic electroluminescent element of the above-mentioned 3rd Embodiment as an example of an electronic device.
- the organic electroluminescent element used in the illumination device of the present embodiment may be designed such that the organic electroluminescent element having the configuration of the third embodiment described above has a resonator structure.
- Examples of the purpose of use of the organic electroluminescence device configured as a resonator structure include, but are not limited to, a light source of an optical storage medium, a light source of an electrophotographic copying machine, a light source of an optical communication processor, a light source of an optical sensor, and the like. Not. Moreover, you may use for the said use by making a laser oscillation.
- the material used for the organic electroluminescent element can be applied to an organic electroluminescent element that emits substantially white light (also referred to as a white organic electroluminescent element).
- a plurality of light emitting materials can simultaneously emit a plurality of light emission colors to obtain white light emission by color mixing.
- three emission maximum wavelengths of three primary colors of red, green, and blue may be included, or two emission using a complementary color relationship such as blue and yellow, blue green and orange, etc.
- a maximum wavelength may be included.
- a combination of light emitting materials for obtaining a plurality of emission colors includes a combination of a plurality of phosphorescent or fluorescent materials, a light emitting material that emits fluorescent or phosphorescent light, and light from the light emitting material as excitation light.
- a combination with a dye material that emits light may also be used.
- a plurality of light emitting dopants may be combined and mixed.
- Such a white organic electroluminescent element is different from a configuration in which organic electroluminescent elements emitting each color are individually arranged in parallel to obtain white light emission, and the organic electroluminescent element itself emits white light. For this reason, a mask is not required for the formation of most layers constituting the element, and for example, a conductive layer can be formed on one surface by vapor deposition, casting, spin coating, ink jet, printing, etc., and productivity is improved. .
- a luminescent material used for the light emitting layer of such a white organic electroluminescent element For example, if it is a backlight in a liquid crystal display element, it will match the wavelength range corresponding to CF (color filter) characteristic.
- the metal complex described in the embodiment of the organic electroluminescent device described above or any material selected from known light-emitting materials may be selected and combined to be whitened.
- the white organic electroluminescent element described above it is possible to produce a lighting device that emits substantially white light.
- the lighting device can increase the area of the light emitting surface by using, for example, a plurality of organic electroluminescent elements.
- the light emitting surface is enlarged by arranging (that is, tiling) a plurality of light emitting panels provided with organic electroluminescent elements on a base material on a support substrate.
- the support substrate may also serve as a sealing material, and each light-emitting panel is tiled in a state where the organic electroluminescence element is sandwiched between the support substrate and the base material of the light-emitting panel.
- An adhesive may be filled between the support substrate and the base material, thereby sealing the organic electroluminescent element. Note that the terminals of the transparent conductor and the counter electrode are exposed around the light emitting panel.
- the center of each light emitting panel is a light emitting region, and a non-light emitting region is generated between the light emitting panels.
- a light extraction member for increasing the amount of light extracted from the non-light-emitting area may be provided in the non-light-emitting area of the light extraction surface.
- a light collecting sheet or a light diffusion sheet can be used as the light extraction member.
- a base material made of PET was fixed to a base material holder of a commercially available vacuum vapor deposition apparatus and attached to a vacuum tank of the vacuum vapor deposition apparatus.
- silver (Ag) was put into the resistance heating boat made from tungsten, and it attached in the said vacuum chamber.
- the resistance heating boat was energized and heated, and each of the conductive layers made of silver was deposited at a deposition rate of 0.1 nm / second to 0.2 nm / second. Formed in thickness.
- the sample 101 was formed with a thickness of 8 nm, and the sample 102 was formed with a thickness of 12 nm.
- an admittance adjusting layer made of indium tin oxide (ITO) was formed with a thickness of 40 nm on a PET substrate, and a conductive layer made of silver was formed with a thickness of 8 nm on the upper part. .
- a transparent PET substrate is fixed to a substrate holder of a commercially available electron beam evaporation apparatus, indium tin oxide (ITO) is put into a heating boat, and these substrate holder and heating boat are connected to the electron beam evaporation apparatus. Attached to a vacuum chamber. Moreover, silver (Ag) was put into the resistance heating boat made from tungsten, and it attached to the vacuum chamber of a commercially available vacuum evaporation system.
- ITO indium tin oxide
- the heating boat containing indium tin oxide (ITO) was irradiated with an electron beam and heated, and the deposition rate was 0.1 nm / second.
- An admittance adjusting layer made of ITO having a thickness of 40 nm was provided on the substrate at a rate of ⁇ 0.2 nm / second.
- the base material formed up to the admittance adjustment layer is transferred to a vacuum chamber of a vacuum deposition apparatus while being vacuumed, and the vacuum chamber is depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then a heating boat containing silver is energized and heated. did.
- a conductive layer made of silver having a thickness of 8 nm is formed at a deposition rate of 0.1 nm / second to 0.2 nm / second, and the transparent conductive of the sample 103 having a laminated structure of the admittance adjusting layer and the conductive layer on the upper side is formed.
- a transparent conductor of Sample 104 was obtained in the same procedure as Sample 103, except that the admittance adjusting layer was composed of titanium oxide (TiO 2 ).
- an admittance adjusting layer made of indium tin oxide (ITO) was formed on a PET substrate with a thickness of 40 nm. Further, a platinum group element-containing layer (Pd layer) made of palladium (Pd) is formed as a conductive layer on the upper portion with a thickness of 0.1 nm, and a metal material layer made of silver is formed on the upper portion with a thickness of 6 nm. Formed.
- ITO indium tin oxide
- a base material made of PET is fixed to a base material holder of a commercially available electron beam evaporation apparatus, indium tin oxide (ITO) is placed in a heating boat, and these substrate holder and heating boat are connected to a vacuum chamber of the electron beam evaporation apparatus. Attached to.
- a palladium (Pd) target was attached to the vacuum chamber of the sputtering apparatus.
- silver (Ag) was put into the resistance heating boat made from tungsten, and it attached to the vacuum chamber of the vacuum evaporation system.
- the heating boat containing ITO is irradiated with an electron beam and heated to evaporate at a deposition rate of 0.1 nm / second to 0.2 nm / second.
- An admittance adjusting layer made of ITO having a thickness of 40 nm was provided on the substrate in seconds.
- the substrate formed up to the admittance adjustment layer is transferred to the vacuum chamber of the sputtering apparatus while being vacuumed, the pressure is reduced to 4 ⁇ 10 ⁇ 4 Pa, a voltage is applied to the Pd target, and the admittance adjustment layer is placed on the admittance adjustment layer.
- a platinum group element-containing layer made of Pd was provided with a thickness of 0.1 nm.
- the base material formed up to the platinum group element-containing layer was transferred to a vacuum chamber of a vacuum deposition apparatus while being vacuumed, and the vacuum chamber was depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then a resistance heating boat containing silver was energized. And heated. Thereby, a metal material layer made of silver having a thickness of 6 nm was formed at a deposition rate of 0.1 nm / second to 0.2 nm / second. Thereby, the transparent conductor of the sample 105 by which the admittance adjustment layer and the conductive layer which consists of a platinum group element containing layer and a metal material layer were laminated
- a transparent conductor of Sample 106 was obtained in the same procedure as Sample 105 except that the admittance adjusting layer was composed of titanium oxide (TiO 2 ).
- a transparent conductor of Sample 107 was obtained in the same procedure as Sample 105 except that the admittance adjusting layer was composed of niobium oxide (Nb 2 O 5 ).
- a transparent conductor of Sample 108 was obtained in the same procedure as Sample 105 except that the thickness of the metal material layer made of silver was 8 nm.
- a transparent conductor of Sample 109 was obtained in the same procedure as Sample 106 except that the thickness of the metal material layer made of silver was 8 nm.
- a transparent conductor of Sample 110 was obtained in the same procedure as Sample 107 except that the thickness of the metal material layer made of silver was 8 nm.
- a transparent conductor of Sample 111 was obtained in the same procedure as Sample 107 except that the thickness of the metal material layer made of silver was 10 nm.
- a transparent conductor of Sample 112 was obtained in the same procedure as Sample 107 except that the thickness of the metal material layer made of silver was 12 nm.
- a second admittance adjusting layer made of magnesium fluoride (MgF 2 ) is formed on a PET substrate with a thickness of 180 nm, and a first portion made of titanium oxide (TiO 2 ) is formed on the upper part.
- An admittance adjusting layer was formed with a thickness of 40 nm.
- a platinum group element-containing layer (Pd layer) made of palladium (Pd) is formed as a conductive layer on the upper portion with a thickness of 0.1 nm, and a metal material layer made of silver is formed on the upper portion with a thickness of 8 nm. Formed.
- a base material made of PET is fixed to a base material holder of a commercially available electron beam evaporation apparatus, magnesium fluoride (MgF 2 ) is put into a heating boat, and these substrate holders and the heating boat are connected to a vacuum of the electron beam evaporation apparatus. Attached to the tank. Further, titanium oxide (TiO 2 ) was put into a heating boat and attached to the vacuum chamber of the electron beam evaporation apparatus.
- a target of palladium (Pd) was attached to the vacuum chamber of the sputtering apparatus.
- silver (Ag) was put into the resistance heating boat made from tungsten, and it attached to the vacuum chamber of the vacuum evaporation system.
- the vacuum chamber of the electron beam evaporation apparatus was depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then heated by irradiating an electron beam onto a heating boat containing magnesium fluoride (MgF 2 ), with a deposition rate of 0.1 nm /
- a second admittance adjusting layer made of magnesium fluoride having a thickness of 180 nm was provided on the substrate at a rate of from second to 0.2 nm / second.
- a heating boat containing titanium oxide (TiO 2 ) is irradiated with an electron beam and heated, and a titanium oxide having a thickness of 40 nm is formed on the second admittance adjusting layer at a deposition rate of 0.1 nm / second to 0.2 nm / second.
- the 1st admittance adjustment layer which consists of was provided.
- the base material formed up to the first admittance adjustment layer is transferred to the vacuum chamber of the sputtering apparatus while being vacuumed, and after the vacuum chamber is depressurized to 4 ⁇ 10 ⁇ 4 Pa, a voltage is applied to the Pd target, A platinum group element-containing layer made of Pd was provided on the admittance adjusting layer to a thickness of 0.1 nm.
- the base material formed up to the platinum group element-containing layer is transferred to a vacuum chamber of a vacuum deposition apparatus while maintaining a vacuum, and after the pressure in the vacuum chamber is reduced to 4 ⁇ 10 ⁇ 4 Pa, a heating boat containing silver is energized. And heated.
- a metal material layer made of silver having a thickness of 8 nm was formed at a deposition rate of 0.1 nm / second to 0.2 nm / second.
- a transparent conductor of Sample 115 was obtained in the same procedure as Sample 107 except that the thickness of the metal material layer made of silver was 15 nm.
- a transparent conductor of Sample 116 was obtained in the same procedure as Sample 107 except that the thickness of the metal material layer made of silver was 16 nm.
- the plasmon absorption rate of the conductive layer was measured as follows. First, palladium was formed on a transparent glass substrate at 0.2 s (0.1 nm) on the substrate using a magnetron sputtering apparatus (MSP-1S) manufactured by Vacuum Device Corporation. The average thickness of palladium was calculated from the film formation rate at the manufacturer's nominal value of the sputtering apparatus. Thereafter, 20 nm of silver was formed on the substrate on which palladium was adhered, using a BMC-800T vapor deposition machine manufactured by SYNCHRON. The resistance heating at this time was 210 A, and the film formation rate was 5 ⁇ / s.
- MSP-1S magnetron sputtering apparatus
- the light transmittance was measured using a spectrophotometer (U-3300, manufactured by Hitachi, Ltd.), and the average light transmittance was measured in the measurement light (light with a wavelength of 450 nm to 800 nm) using the same base material as the sample as the baseline. .
- the surface resistance was measured using a resistivity meter (MCP-T610 manufactured by Mitsubishi Chemical Corporation) by a four-terminal four-probe method and a constant current application method.
- Table 1 shows the configurations of the samples 101 to 116 and the measurement results of optical admittance, absorption rate (%), average visible light transmittance (%), and surface resistance ( ⁇ / sq.).
- the sample 103 and the sample 104 having the admittance adjusting layer have an improved average visible light transmittance as compared with the sample 101 not having the admittance adjusting layer. From this result, it turns out that the light transmittance of a transparent conductor improves by providing an admittance adjustment layer.
- Samples 105 to 107 and Samples 108 to 110 are samples in which the admittance adjusting layers are made of ITO, TiO 2 , and Nb 2 O 5 , respectively, and the metal material layers have different thicknesses.
- the optical absorptance x 1 and x 2 increase, and the light absorption rate of the transparent conductor decreases.
- x 1 and x 2 is the sample 105 and sample 108 is less than 1.8
- x 1 and x 2 is 2.0 or more samples 106, the sample 107, the sample 109 and sample 110, the maximum transparent conductor Absorption rate is decreasing.
- the sample 107 and the sample 110 having the largest x 1 and x 2 have the lowest light absorption rate. Therefore, by increasing the x 1 and x 2, the light absorption of the transparent conductive material is lowered.
- the best measurement results were obtained in the sample 106 and the sample 109 using TiO 2 in which x 1 and x 2 are values between ITO and Nb 2 O 5 . From this result, if x 1 and x 2 are too large, the light absorption rate of the transparent conductor can be reduced, but the reflection increases in the conductive layer, and as a result, the visible light average transmittance of the transparent conductor is lowered. This is considered to be a factor.
- the thickness of the conductive layer needs to be 15 nm or less.
- the sample 113 and the sample 114 provided with two admittance adjusting layers have a lower average absorptivity and an improved average visible light transmittance as compared with the sample 109 and the sample 110 provided with the same thickness of the conductive layer. .
- the optical admittance of the conductor layer can be easily adjusted.
- the light transmittance of a transparent conductor can be improved by adjusting preferably the optical admittance of a conductor layer.
- each transparent conductor 32 was formed on the transparent base material 31 made of non-alkali glass or polyethylene terephthalate (PET). Each transparent conductor 32 was formed in the same procedure as the samples 101 to 116 in Example 1.
- a hole-transporting material that serves as both a hole-injecting layer and a hole-transporting layer made of ⁇ -NPD is heated by energizing a heating boat containing ⁇ -NPD represented by the following structural formula as a hole-transporting injecting material.
- An injection layer 33 was formed on the transparent conductor 32. At this time, the deposition rate was 0.1 nm / second to 0.2 nm / second, and the thickness was 20 nm.
- each of the heating boat containing the host material H4 having the structural formula shown above and the heating boat containing the phosphorescent compound Ir-4 having the structural formula shown above were energized independently to each other.
- a light emitting layer 34 made of H4 and phosphorescent compound Ir-4 was formed on the hole transport / injection layer 33.
- the thickness was 30 nm.
- a hole-blocking layer 35 made of BAlq was formed on the light-emitting layer 34 by heating a heated boat containing BAlq represented by the following structural formula as a hole-blocking material. At this time, the deposition rate was 0.1 nm / second to 0.2 nm / second, and the thickness was 10 nm.
- the base material 31 on which the light emitting functional layer is formed is transferred into the second vacuum chamber of the vacuum evaporation apparatus, the pressure inside the second vacuum chamber is reduced to 4 ⁇ 10 ⁇ 4 Pa, and then the second vacuum
- the resistance heating boat containing aluminum attached in the tank was energized and heated.
- the counter electrode 37 made of aluminum having a thickness of 100 nm was formed at a deposition rate of 0.3 nm / second.
- the counter electrode 37 is used as a cathode.
- a bottom emission type organic electroluminescence device was formed on the base material 31.
- the organic electroluminescent element is covered with a sealing material made of a glass substrate having a thickness of 300 ⁇ m, and an adhesive (sealant) is placed between the transparent sealing material and the base material 31 in a state of surrounding the organic electroluminescent element. Filled.
- an adhesive epoxy photocurable adhesive (Luxtrac LC0629B manufactured by Toagosei Co., Ltd.) was used. The adhesive filled between the transparent sealing material and the base material 31 was irradiated with UV light from the glass substrate (transparent sealing material) side, and the adhesive was cured to seal the organic electroluminescent element. .
- the organic electroluminescent element In the formation of the organic electroluminescent element, a vapor deposition mask is used for forming each layer, and the central 4.5 cm ⁇ 4.5 cm of the 5 cm ⁇ 5 cm base material 31 is used as the light emitting region, and the width of the entire light emitting region is wide. A non-light emitting area of 0.25 cm was provided.
- the conductive layer of the transparent conductor 32 serving as the anode and the counter electrode 37 serving as the cathode are insulated from the hole transport / injection layer 33 by the electron transport / injection layer 36 on the periphery of the substrate 31.
- the terminal portion was formed in a drawn shape.
- organic electroluminescent elements were provided on the substrate 31, and each light emitting panel of the organic electroluminescent elements of Samples 201 to 216 was obtained by sealing this with a transparent sealing material and an adhesive. In each of these light emitting panels, the emitted light h of each color generated in the light emitting layer 34 is extracted from the substrate 31 side.
- Table 2 shows the configurations of the samples 201 to 216 and the measurement results of the driving voltage (V) and the chromaticity difference ( ⁇ xy).
- the sample 206 when the measurement result of the color change is seen, in the sample 206, the sample 207, the sample 209, and the sample 210 using TiO 2 or Nb 2 O 5 as the admittance adjustment layer, the sample 205 and the sample using ITO as the admittance adjustment layer Compared with 208, good results were obtained. From this result, it is considered preferable to use TiO 2 or Nb 2 O 5 as the admittance adjusting layer.
- sample 213 and sample 214 provided with two admittance adjusting layers obtained better results in measurement results of color change than sample 209 and sample 210 provided with the same thickness of conductive layer. That is, by forming a plurality of admittance adjustment layers like the sample 213 and the sample 214, it is possible to adjust the optical admittance of the conductor layer, and to improve the optical characteristics of the organic EL element.
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Abstract
Description
また、本発明の電子デバイスは、上記透明導電体を備える。
さらに、アドミッタンス調整層により導体層の光学アドミッタンスY1及びY2を調整することにより、透明導電体の光透過性を向上させることができる。
従って、透明導電体において、導電性の向上と光透過性の向上との両立が可能となる。また、この透明導電体を用いて、導電性と光透過性とに優れる電子デバイスを構成することができる。
なお、説明は以下の順序で行う。
1.透明導電体(第1実施形態)
2.透明導電体(第2実施形態)
3.有機電界発光素子(第3実施形態)
4.照明装置(第4実施形態)
本発明の第1実施形態について説明する。図1に、第1実施形態の透明導電体の概略構成図(断面図)を示す。
図1に示すように、透明導電体10は、アドミッタンス調整層12と、導電層15とを備える。導電層15は、金属材料層14と、この金属材料層14に隣接する白金族元素含有層13が設けられた構成である。また、白金族元素含有層13は、金属材料層14とアドミッタンス調整層12との間に挟まれた構成を有している。そして、アドミッタンス調整層12と、白金族元素含有層13及び金属材料層14からなる導電層15とを透明導電体10が、基材11上に形成されている。
つまり、透明導電体10は、基材11上に、アドミッタンス調整層12、白金族元素含有層13、及び、金属材料層14がこの順に積層された構成である。そして、導電層15において、白金族元素含有層13が、アドミッタンス調整層12と金属材料層14との間に挟持された構成である。
透明導電体10は、波長400nm~800nmの光の平均吸収率が15%以下、好ましくは12%以下であり、さらに10%以下であることが好ましい。また、波長400nm~800nmの光の吸収率の最大値は25%以下であり、好ましくは20%以下であり、さらに15%以下であることが好ましい。透明導電体10の光の吸収率は、導電層15のプラズモン吸収率や、各層を構成する材料の光吸収率を抑制することで、低減することができる。
透明導電体10が形成される基材11は、この上に形成される各種素子の支持材である。基材11は、可視光に対する透明性が高いことが好ましく、このような基材11としては、例えばガラス、石英、透明樹脂フィルム等を挙げることができるが、これらに限定されない。
アドミッタンス調整層12は、透明導電体10の反射率や透過率等の光学特性、特に、導電層15の反射率を調整するために設けられる層である。アドミッタンス調整層12による透明導電体10のアドミッタンス調整に関しては、後述する。
導電層15は、導電層15を主として構成する金属材料層14と、この金属材料層14に隣接して設けられた白金族元素含有層13とから構成される。
白金族元素含有層13は、金属材料層14に隣接して設けられた白金(Pt)、及び、パラジウム(Pd)の少なくともいずれかを含む層である。また、本例では、白金族元素含有層13は、アドミッタンス調整層12上に直接形成されている層である。
また、PtやPdでは成長核同士の間隔を、原子が表面拡散して形成される塊同士の間隔よりも狭くすることができる。従って、この成長核を起点として膜が成長すると、厚みが薄くても平坦な膜となりやすい。つまり、厚みが薄くても導通が得られ、さらにプラズモン吸収の生じ難い金属材料層14を形成することができる。
さらに、白金族元素含有層13のみによる単独層として形成されていてもよく、白金族元素含有層13上に形成される金属材料層14の金属材料と混在した層となっていてもよい。
特にエッチング後の薄膜(成長核)に所望の凹凸を形成しやすいとの観点から、イオンビームエッチングが特に好ましい。
金属材料層14は、白金族元素含有層13に隣接して形成された、金属材料からなる層である。
金属材料層14に含まれる金属は特に制限されず、例えば銀、銅、金、白金族、チタン、クロム等を用いることができる。金属材料層14は、これらの金属が1種のみ含まれてもよく、2種以上が含まれてもよい。
以上のような金属材料層14は、銀又は銀を主成分とする合金の層が、必要に応じて複数の層に分けて積層された構成であってもよい。
次に、透明導電体10の光学アドミッタンスについて説明する。透明導電体10のアドミッタンス調整層12は、導電層15の固有吸収と反射率を調整する機能を有する。
また、別の例として、透明導電体10の上に有機EL層を積層した場合、光が入射する媒質の光学アドミッタンスy0は、有機EL層を構成する材料の屈折率で決まる値となる。例えば、有機EL層として、透明導電体10の上に屈折率1.8の有機材料を積層した構成の場合、光が入射する媒質の光学アドミッタンスy0は1.8となる。このため、等価アドミッタンスYEが1.8に近ければ近いほど、透明導電体10の反射率Rが低くなる。
さらに、図2及び図3において、導電層15の上記Y1と反対側の界面の波長570nmの光学アドミッタンスを、Y2=x2+iy2とする。このY2が、透明導電体10の等価アドミッタンスYEに相当する。なお、上記Y1と反対側の界面とは、図2においては導電層15の基材11と反対側の界面、図3においては導電層15のアドミッタンス調整層12と反対側の界面である。
そして、このアドミッタンス軌跡の始点は、基材11の表面であるため、基材11側の等価アドミッタンスY1が基材11の屈折率(例えば、n:1.5)に依存し、YZとY1のアドミッタンス座標(xZ,yZ)=(x1,y1)=(1.5,0)となる。
そして、導電層15とアドミッタンス調整層12との界面の等価アドミッタンスY1がアドミッタンス座標(x1,y1)である。導電層15のアドミッタンス調整層12と反対側の界面の等価アドミッタンスY2がアドミッタンス座標(x2,y2)である。
従って、導電層15の等価アドミッタンスY2のアドミッタンス座標(x2,y2)が、光学アドミッタンスy0のアドミッタンス座標(1,0)や(1.8,0)に近づくほど、透明導電体10の反射率Rが小さくなる。
従って、金属材料層14と白金族元素含有層13とからなる導電層15の場合には、アドミッタンス調整層12側の白金族元素含有層13の界面の光学アドミッタンスをY1=x1+iy1とする。そして、アドミッタンス調整層12と反対側の金属材料層14の界面の光学アドミッタンスをY2=x2+iy2とする。
例えば、アドミッタンス調整層12を設けずに、基材11上に直接導電層15を積層すると、上述の図2に示すように、アドミッタンス軌跡が、始点(xz,yz)である基材11のアドミッタンス座標(1.5,0)から、縦軸(虚部)方向にある(x2,y2)に大きく移動する。つまり、アドミッタンス座標の虚部の絶対値が非常に大きくなる。このように、アドミッタンス座標の虚部の絶対値が大きくなると、導電層15の光学アドミッタンスY2(透明導電体10の等価アドミッタンスYE)は、光が入射する媒質の光学アドミッタンスy0のアドミッタンス座標(x0,y0)から遠ざかる方向に移動する。このため、導電層15の光学アドミッタンスY2を、光が入射する媒質の光学アドミッタンスy0、例えば、空気のアドミッタンス座標(1,0)や、有機材料のアドミッタンス座標(1.8,0)に近づけることが難しくなる。
特に、Y1の実部の座標x1を1.6以上とすると、アドミッタンス軌跡の円弧が大きくなり、導電層15のアドミッタンスY1のアドミッタンス座標(x1,y1)が、アドミッタンス軌跡の始点(xz,yz)から、虚部の正方向に大きく移動する。
ここで、各層界面のアドミッタンスYと、各層に存在する電場強度Eとの間には、下記関係式が成り立つ。
以上のように構成された透明導電体10は、白金族元素含有層13に隣接させて金属材料層14が形成された、導電層15を設けた構成である。これにより、白金族元素含有層13に隣接させて金属材料層14を形成する際には、金属材料層14を構成する金属原子が白金族元素含有層13を構成するPtやPdと相互作用し、金属原子の白金族元素含有層13表面での拡散距離が減少し、金属材料の凝集が抑えられる。このため、一般的には核成長型(Volumer-Weber:VW型)での成長により島状に孤立し易い金属材料層14が、単層成長型(Frank-van der Merwe:FM型)の成長によって形成されるようになる。従って、薄いながらも、均一な厚さの導電層15が得られるようになる。
次に、本発明の第2実施形態について説明する。図4に、第2実施形態の透明導電体の概略構成図(断面図)を示す。図4に示すように、第2実施形態の透明導電体20は、アドミッタンス調整層12として、第1アドミッタンス調整層21と第2アドミッタンス調整層22とを備えることのみが、図1に示す第1実施形態の透明導電体10と異なる。以下、第1実施形態と同様の構成要素についての重複する詳細な説明は省略し、第2実施形態の透明導電体20の構成を説明する。
導電層15は、金属材料層14と、金属材料層14に隣接する位置に形成された白金族元素含有層13とからなる。つまり、導電層15において、白金族元素含有層13が、金属材料層14とアドミッタンス調整層12との間に挟まれた構成である。そして、第2アドミッタンス調整層22、第1アドミッタンス調整層21、白金族元素含有層13、及び、導電層15からなる透明導電体20が、基材11上に形成されている。
つまり、透明導電体20は、基材11上に、第2アドミッタンス調整層22、第1アドミッタンス調整層21、白金族元素含有層13、及び、金属材料層14がこの順に積層された構成であり、第1アドミッタンス調整層21と金属材料層14とに白金族元素含有層13が挟持された構成である。
第2アドミッタンス調整層22は、アドミッタンス調整層12を構成する2層のうち、導電層15が形成されない側に設けられた層である。つまり、アドミッタンス調整層12では、導電層15が形成されている側に第1アドミッタンス調整層21が設けられ、導電層15が形成されている側と反対側に第2アドミッタンス調整層22が設けられている。
次に、透明導電体20の光学アドミッタンスについて説明する。
図5に、透明導電体20の波長570nmのアドミッタンス軌跡を示す。
導電層15の光学アドミッタンスY2のアドミッタンス座標(x2,y2)が、透明導電体20の等価アドミッタンスYEに相当する。
そして、透明導電体20では、第1アドミッタンス調整層21よりも屈折率の低い第2アドミッタンス調整層22を備えることにより、アドミッタンス軌跡がアドミッタンス座標(xZ,yZ)から、横軸(実部)の負方向にある点Wに移動する。この移動した点Wは、第1アドミッタンス調整層21と第2アドミッタンス調整層22との界面の光学アドミッタンスに相当する。
第1アドミッタンス調整層21による透明導電体20への作用は、上述第1実施形態で説明した透明導電体へのアドミッタンス調整層の作用と同様である。
この結果、導電層15の光学アドミッタンスY2を、光が入射する媒質の光学アドミッタンスy0、例えば、空気のアドミッタンス座標(1,0)や、有機材料のアドミッタンス座標(1.8,0)に近づけることできる。
従って、アドミッタンス調整層12を、第1アドミッタンス調整層21と第2アドミッタンス調整層22のように複数の層から構成することで、透明導電体の光透過性を向上させることができる。
次に、本発明の第3実施形態について説明する。第3実施形態は、電子デバイスの一例として、上述の第2実施形態の透明導電体を用いたボトムエミッション型の有機電界発光素子について説明する。図6に、本実施形態の有機電界発光素子の断面構成図を示す。以下にこの図に基づいて有機電界発光素子の構成を説明する。
図6に示す有機電界発光素子30は、透明基板である基材11上に設けられており、基材11側から順に、アノードとなる透明導電体20、発光機能層16、及びカソードとなる対向電極17が積層されている。このうち、透明導電体20として、上述の第1実施形態の透明導電体20が用いられている。このため有機電界発光素子30は、発生させた光(以下、発光光hと記す)を、少なくとも基材11側から取り出すボトムエミッション型として構成されている。
基材11は、上述の図1に示す第1実施形態の透明導電体20が設けられる基材のうち、光透過性を有する透明な材料が用いられる。
透明導電体20は、上述の実施形態の透明導電体20であり、基材11側から、第2アドミッタンス調整層22、第1アドミッタンス調整層21、白金族元素含有層13、及び、導電層15がこの順に形成された構成である。ここでは特に、透明導電体20を構成する導電層15が実質的なアノードとなる。
対向電極17は、発光機能層16に電子を供給するためのカソードとして機能する導電層であり、金属、合金、有機又は無機の導電性化合物、及びこれらの混合物が用いられる。具体的には、金、アルミニウム、銀、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、インジウム、リチウム/アルミニウム混合物、希土類金属、ITO、ZnO、TiO2、SnO2等の酸化物半導体等が挙げられる。
本実施形態の有機電界発光素子に用いられる発光層16cは、発光材料として例えば燐光発光化合物が含有されている。
発光層16cに含有されるホスト化合物としては、室温(25℃)における燐光発光の燐光量子収率が0.1未満の化合物が好ましい。さらに、燐光量子収率が0.01未満である化合物が好ましい。また、ホスト化合物は、発光層16cに含有される化合物の中で、層中での体積比が50%以上であることが好ましい。
本実施形態の有機電界発光素子に用いることのできる発光材料としては、燐光発光性化合物(燐光性化合物、燐光発光材料ともいう)が挙げられる。
蛍光発光材料としては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、又は希土類錯体系蛍光体等が挙げられる。
注入層とは、駆動電圧低下や発光輝度向上のために電極と発光層16cの間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)に詳細に記載されており、正孔注入層16aと電子注入層16eとがある。
正孔輸送層16bは、正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層16a、電子阻止層も正孔輸送層16bに含まれる。正孔輸送層16bは単層又は複数層設けることができる。
電子輸送層16dは、電子を輸送する機能を有する材料からなり、広い意味で電子注入層16e、正孔阻止層(図示せず)も電子輸送層16dに含まれる。電子輸送層16dは単層構造又は複数層の積層構造として設けることができる。
阻止層は、上述のように有機化合物薄膜の基本構成層の他に、必要に応じて設けられる。例えば、特開平11-204258号公報、同11-204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。
補助電極は、透明導電体20の抵抗を下げる目的で設けられ、透明導電体20の導電層15に接して設けられる。補助電極を形成する材料は、金、白金、銀、銅、アルミニウム等の抵抗が低い金属が好ましい。これらの金属は光透過性が低いため、光取り出し面からの発光光hの取り出しの影響のない範囲でパターン形成される。このような補助電極の形成方法としては、蒸着法、スパッタリング法、印刷法、インクジェット法、エアロゾルジェット法などが挙げられる。補助電極の線幅は、光を取り出す開口率の観点から50μm以下であることが好ましく、補助電極の厚さは、導電性の観点から1μm以上であることが好ましい。
封止材は、有機電界発光素子30を覆うものであって、板状(フィルム状)の封止部材であって接着剤によって基材11側に固定されていてもよく、封止層であってもよい。この封止材は、有機電界発光素子30における透明導電体20及び対向電極17の端子部分を露出させる状態で、少なくとも発光機能層16を覆う状態で設けられている。また封止材に電極を設け、有機電界発光素子30の透明導電体20及び対向電極17の端子部分と、この電極とを導通させるように構成されていてもよい。
尚、ここでの図示は省略したが、基材11との間に有機電界発光素子EL及び封止材を挟んで保護層若しくは保護板を設けてもよい。この保護層若しくは保護板は、有機電界発光素子ELを機械的に保護するためのものであり、特に封止材が封止層である場合には、有機電界発光素子ELに対する機械的な保護が十分ではないため、このような保護層若しくは保護板を設けることが好ましい。
ここでは一例として、図6に示す有機電界発光素子30の製造方法を説明する。
次に、第1アドミッタンス調整層21上に、白金族元素含有層13を1nm程度形成し、その後、金属材料層14を3nm~15nmとなるように形成する。白金族元素含有層13と金属材料層14は、上述の第1実施形態に記載の方法で形成することができる。以上により、アノード側の透明導電体20を基材11上に作製する。
第1アドミッタンス調整層21、第2アドミッタンス調整層22の形成は、蒸着法(EB法等)、スパッタリング法等があるが、緻密な層が得られやすい点から、イオンアシストEB蒸着法又はスパッタリング法が特に好ましい。
さらに、これらの透明導電体が適用される有機電界発光素子は、ボトムエミッション型に限られず、例えば、対向電極側から光を取り出すトップエミッション型の構成や、両面から光を取り出す両面発光型の構成としてもよい。有機電界発光素子がトップエミッション型であれば、対向電極に透明な材料を用いると共に、透明導電体の基材に換えて反射性を有する不透明な基材を用い、発光光hを基板で反射させて対向電極側から取り出す構成としてもよい。また、有機電界発光素子が両面発光型であれば、対向電極に透明導電体と同様に透明な材料を用い、発光光hを両面から取り出す構成としてもよい。
また、ボトミエミッション型、トップエミッション型及び両面発光型の有機電界発光素子においても、上述の第3実施形態の有機電界発光素子のように、透明導電体をアノードとする構成以外にも、透明導電体をカソードとする構成にも適用可能である。
上述した各実施形態の有機電界発光素子は、上述したように面発光体であるため各種の発光光源として用いることができる。例えば、家庭用照明や車内照明などの照明装置、時計や液晶用のバックライト、看板広告用照明、信号機の光源、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、これに限定するものではなく、特にカラーフィルターと組み合わせた液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
[照明装置-1]
本発明の第4実施形態について説明する。第4実施形態は、電子デバイスの一例として上述の第3実施形態の有機電界発光素子を用いた照明装置について説明する。
また、照明装置は、例えば有機電界発光素子を複数用いることにより、発光面を大面積化することもできる。この場合、基材上に有機電界発光素子を設けた複数の発光パネルを、支持基板上に複数配列する(すなわちタイリングする)ことによって発光面を大面積化する。支持基板は、封止材を兼ねるものであってもよく、この支持基板と、発光パネルの基材との間に有機電界発光素子を挟持する状態で各発光パネルをタイリングする。支持基板と基材との間には接着剤を充填し、これによって有機電界発光素子を封止してもよい。尚、発光パネルの周囲には、透明導電体及び対向電極の端子を露出させておく。
[透明導電体の作製]
試料101~114の各透明導電体を、導電性領域の面積が5cm×5cmとなるように作製した。下記表1に、試料101~114の各透明導電体の構成を示す。
以下のようにして、ポリエチレンテレフタレート(PET)製の基材上に、下記表1に示すそれぞれの厚さで銀からなる導電層を形成した。
以下のようにして、PET製の基材上に、酸化インジウムスズ(ITO)からなるアドミッタンス調整層を40nmの厚さで形成し、この上部に銀からなる導電層を8nmの厚さで形成した。
アドミッタンス調整層を酸化チタン(TiO2)で構成した以外は、上記試料103と同様の手順で試料104の透明導電体を得た。
以下のようにして、PET製の基材上に、酸化インジウムスズ(ITO)からなるアドミッタンス調整層を40nmの厚さで形成した。さらに、この上部に導電層として、パラジウム(Pd)からなる白金族元素含有層(Pd層)を0.1nmの厚さで形成し、この上部に銀からなる金属材料層を6nmの厚さで形成した。
アドミッタンス調整層を酸化チタン(TiO2)で構成した以外は、上記試料105と同様の手順で試料106の透明導電体を得た。
アドミッタンス調整層を酸化ニオブ(Nb2O5)で構成した以外は、上記試料105と同様の手順で試料107の透明導電体を得た。
銀からなる金属材料層の厚さを8nmで構成した以外は、上記試料105と同様の手順で試料108の透明導電体を得た。
銀からなる金属材料層の厚さを8nmで構成した以外は、上記試料106と同様の手順で試料109の透明導電体を得た。
銀からなる金属材料層の厚さを8nmで構成した以外は、上記試料107と同様の手順で試料110の透明導電体を得た。
銀からなる金属材料層の厚さを10nmで構成した以外は、上記試料107と同様の手順で試料111の透明導電体を得た。
銀からなる金属材料層の厚さを12nmで構成した以外は、上記試料107と同様の手順で試料112の透明導電体を得た。
以下のようにして、PET製の基材上に、フッ化マグネシウム(MgF2)からなる第2アドミッタンス調整層を180nmの厚さで形成し、この上部に酸化チタン(TiO2)からなる第1アドミッタンス調整層を40nmの厚さで形成した。さらに、この上部に導電層として、パラジウム(Pd)からなる白金族元素含有層(Pd層)を0.1nmの厚さで形成し、この上部に銀からなる金属材料層を8nmの厚さで形成した。
さらに、酸化チタン(TiO2)の入った加熱ボートに電子ビームを照射して加熱し、蒸着速度0.1nm/秒~0.2nm/秒で第2アドミッタンス調整層上に厚さ40nmの酸化チタンからなる第1アドミッタンス調整層を設けた。
フッ化マグネシウム(MgF2)からなる第2アドミッタンス調整層の厚さを90nmで構成し、酸化ニオブ(Nb2O5)からなる第1アドミッタンス調整層を25nmの厚さで形成した以外は、上記試料113と同様の手順で試料114の透明導電体を得た。
銀からなる金属材料層の厚さを15nmで構成した以外は、上記試料107と同様の手順で試料115の透明導電体を得た。
銀からなる金属材料層の厚さを16nmで構成した以外は、上記試料107と同様の手順で試料116の透明導電体を得た。
上記で作製した試料101~116の各透明導電体の光学特性として、光学アドミッタンスの決定、吸収率(平均吸収率、最大吸収率、プラズモン吸収率:%)の測定を行った。
また、試料101~116の各透明導電体について、可視光平均透過率(%)、及び、表面抵抗(Ω/sq.)を測定した。
光学アドミッタンスの決定、吸収率(%)、可視光平均透過率(%)、及び、表面抵抗(Ω/sq.)の測定は、以下のように行った。
透明導電体を構成する各界面のアドミッタンスは、薄膜設計ソフトEssential Macleod Ver.9.4.375で算出した。なお、算出に必要な各層の厚みd、屈折率n、及び吸収係数kは、J.A.Woollam Co.Inc.製のVB-250型VASEエリプソメーターで測定した。
透明導電体の正面に対して、5°傾けた角度から測定光(波長450nm~800nmの光)を入射させ、日立株式会社製:分光光度計 U4100にて、光の平均透過率及び平均反射率を測定した。そして、平均吸収率は、100-(平均透過率+平均反射率)の計算式より算出した。なお、測定光は、基材側から入射させた。
また、上記と同様の方法で波長450nm~800nmの透過率及び反射率を測定した。そして、各波長における吸収率を100-(透過率+反射率)の計算式より算出し、得られた値の最大値を最大吸収率とした。
導電層のプラズモン吸収率は、以下のように測定した。
まず、透明ガラス基板上に、パラジウムを真空デバイス社製のマグネトロンスパッタ装置(MSP-1S)を用いて基板上に0.2s(0.1nm)で形成した。パラジウムの平均厚みは、スパッタ装置のメーカー公称値の成膜速度から算出した。その後、パラジウムが付着した基板上にシンクロン製のBMC-800T蒸着機を用いて銀を20nm形成した。このときの抵抗加熱は210A、成膜レートは5Å/sとした。
得られた導電層の反射率及び透過率を測定し、吸収率=100-(透過率+反射率)として算出した。この導電層にはプラズモン吸収が無いと仮定し、実施例で作成した各試料の透明導電体の導電層の吸収率を測定したデータから差し引き、プラズモン吸収率を測定した。
光の透過率及び反射率は、日立株式会社製:分光光度計 U4100にて測定した。
光透過率の測定は、分光光度計(日立製作所製U-3300)を用い、測定光(波長450nm~800nmの光)において、試料と同じ基材をベースラインとして光の平均透過率を測定した。
表面抵抗の測定は、抵抗率計(三菱化学社製MCP-T610)を用い、4端子4探針法定電流印加方式で行った。
アドミッタンス調整層、及び、白金族元素含有層と金属材料層とからなる導電層がこの順に形成されている試料105~116の透明導電体では、各吸収率が低く、可視光平均透過率、表面抵抗においても良好な結果が得られた。
一方、可視光平均透過率では、x1及びx2がITOとNb2O5の間の値であるTiO2を用いた試料106及び試料109において、最もよい測定結果が得られた。
この結果から、x1及びx2が大き過ぎると、透明導電体の光吸収率をさげられるものの、導電層で反射が増加するため、結果的に透明導電体の可視光平均透過率を低下させる要因となると考えられる。
実施例1で作製した透明導電体の試料101~116を、アノードとして発光機能層の下部に設けたボトムエミッション型の有機電界発光素子(有機EL素子)の試料201~216を作製した。図7を参照し、作製手順を説明する。尚、下記表2には、試料201~216の有機電界発光素子に用いた透明導電体の構成を示している。各有機電界発光素子の試料201~216には、試料番号の下2ケタが一致する実施例1の各試料101~116の透明導電体を用いた。
(透明導電体の形成)
先ず、試料201~216の作製において、透明な無アルカリガラス製又はポリエチレンテレフタレート(PET)製の基材31の上部に、各透明導電体32を形成した。各透明導電体32の形成は、実施例1の試料101~116と同様の手順で行った。
まず、正孔輸送注入材料として下記構造式に示すα-NPDが入った加熱ボートに通電して加熱し、α-NPDよりなる正孔注入層と正孔輸送層とを兼ねた正孔輸送・注入層33を、透明導電体32上に形成した。この際、蒸着速度0.1nm/秒~0.2nm/秒、厚さ20nmとした。
次に、先に構造式を示したホスト材料H4の入った加熱ボートと、先に構造式を示した燐光発光性化合物Ir-4の入った加熱ボートとを、それぞれ独立に通電し、ホスト材料H4と燐光発光性化合物Ir-4とよりなる発光層34を、正孔輸送・注入層33上に形成した。この際、蒸着速度がホスト材料H4:燐光発光性化合物Ir-4=100:6となるように、加熱ボートの通電を調節した。また厚さ30nmとした。
次に、正孔阻止材料として下記構造式に示すBAlqが入った加熱ボートに通電して加熱し、BAlqよりなる正孔阻止層35を、発光層34上に形成した。この際、蒸着速度0.1nm/秒~0.2nm/秒、厚さ10nmとした。
その後、電子輸送材料として先に構造式を示した化合物10の入った加熱ボートと、フッ化カリウムの入った加熱ボートとを、それぞれ独立に通電し、化合物10とフッ化カリウムとよりなる電子注入層と電子輸送層とを兼ねた電子輸送・注入層36を、正孔阻止層35上に形成した。この際、蒸着速度が化合物10:フッ化カリウム=75:25になるように、加熱ボートの通電を調節した。また厚さ30nmとした。
以上の後には、発光機能層が形成された基材31を、真空蒸着装置の第2真空槽内に移送し、第2真空槽内を4×10-4Paまで減圧した後、第2真空槽内に取り付けられたアルミニウムの入った抵抗加熱ボートを通電して加熱した。これにより、蒸着速度0.3nm/秒で厚さ100nmのアルミニウムからなる対向電極37を形成した。この対向電極37は、カソードとして用いられる。以上により基材31上に、ボトムエミッション型の有機電界発光素子を形成した。
その後、有機電界発光素子を、厚さ300μmのガラス基板からなる封止材で覆い、有機電界発光素子を囲む状態で、透明封止材と基材31との間に接着剤(シール材)を充填した。接着剤としては、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を用いた。透明封止材と基材31との間に充填した接着剤に対して、ガラス基板(透明封止材)側からUV光を照射し、接着剤を硬化させて有機電界発光素子を封止した。
試料201~216で作製した有機電界発光素子について、駆動電圧(V)、及び、色度差(Δxy)を測定した。この結果を下記表2に合わせて示す。
駆動電圧の測定においては、各試料201~216の有機電界発光素子の透明導電体32側(すなわち基材31側)での正面輝度が1000cd/m2となるときの電圧を駆動電圧として測定した。なお、輝度の測定には分光放射輝度計CS-1000(コニカミノルタセンシング製)を用いた。得られた駆動電圧の数値が小さいほど、好ましい結果であることを表わす。
色変化の測定においては、各試料201~216の有機電界発光素子に2.5mA/cm2の電流を加え、角度の異なる位置からCIE1931表色系における色度を測定した。この際、透明導電体32側の発光面に対する法線方向となる0°の位置と、垂直水平(上下左右)方向にそれぞれ45°の各位置とで色度を測定した。角度の異なる位置において測定した色度の差を、色変化(Δxy)として下記表2に示した。色変化は、色度の視野角特性を表し、数値が小さいほど好ましい結果となる。
アドミッタンス調整層、及び、白金族元素含有層と金属材料層とからなる導電層がこの順に形成された透明導電体を備える試料205~216の有機EL素子では、駆動電圧、色変化共に良好な結果が得られた。
Claims (12)
- アドミッタンス調整層と、導電層とがこの順に積層された透明導電体であって、
前記導電層が、厚さ15nm以下の金属材料層と、Pt及びPdの少なくとも一方を含む白金族元素含有層とからなり、
前記導電層の前記アドミッタンス調整層側の界面における波長570nmの光学アドミッタンスをY1=x1+iy1、前記導電層の前記アドミッタンス調整層と反対側の界面における波長570nmの光学アドミッタンスをY2=x2+iy2、で表した場合に、x1及びx2の少なくとも一方が1.6以上である
透明導電体。 - 前記アドミッタンス調整層が、誘電体材料、又は、酸化物半導体材料を含有する請求項1に記載の透明導電体。
- 前記導電層のプラズモン吸収率が、波長400nm~800nmの全範囲で15%以下である請求項1に記載の透明導電体。
- x1及びx2が共に1.6以上である請求項1に記載の透明導電体。
- 前記光学アドミッタンスY1のy1と、前記光学アドミッタンスY2のy2とが、y1×y2<0の関係を満たす請求項1に記載の透明導電体。
- 前記金属材料層が銀又は銀を主成分とする合金を含む請求項1に記載の透明導電体。
- 前記アドミッタンス調整層が、TiO2、又は、Nb2O5を含む請求項1に記載の透明導電体。
- 前記アドミッタンス調整層の屈折率が1.8以上2.5以下である請求項1に記載の透明導電体。
- 前記アドミッタンス調整層が、第1アドミッタンス調整層と、第2アドミッタンス調整層とからなり、前記第1アドミッタンス調整層側に前記導電層が設けられている請求項1に記載の透明導電体。
- 前記第1アドミッタンス調整層の屈折率が、前記第2アドミッタンス調整層の屈折率よりも0.2以上大きい請求項1に記載の透明導電体。
- 前記請求項1から10のいずれかに記載の透明導電体を備える電子デバイス。
- 前記透明導電体上に発光機能層を有する請求項11に記載の電子デバイス。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160138328A1 (en) * | 2013-04-10 | 2016-05-19 | Cardinal Ig Company | Multilayer film with electrically switchable optical properties |
WO2017149772A1 (ja) * | 2016-03-04 | 2017-09-08 | パイオニア株式会社 | 発光装置および発光システム |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9818976B2 (en) * | 2014-05-13 | 2017-11-14 | Apple Inc. | Encapsulation layers with improved reliability |
JP6487173B2 (ja) * | 2014-10-08 | 2019-03-20 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
JP6056895B2 (ja) | 2015-03-23 | 2017-01-11 | マツダ株式会社 | 直噴エンジンの燃料噴射制御装置 |
US20190353321A1 (en) * | 2018-05-15 | 2019-11-21 | GM Global Technology Operations LLC | Light guide with molded in graphic |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105740A (ja) * | 1993-10-08 | 1995-04-21 | Mitsui Toatsu Chem Inc | 透明導電性フィルム |
JPH0973001A (ja) * | 1995-07-06 | 1997-03-18 | Sony Corp | 反射防止膜 |
JPH10264287A (ja) * | 1997-03-25 | 1998-10-06 | Mitsui Chem Inc | 透明積層体及びそれを用いた調光体及びディスプレイ用フィルター |
JPH11174993A (ja) * | 1997-12-10 | 1999-07-02 | Nippon Sheet Glass Co Ltd | 透明導電膜付き基板およびそれを用いた平面型表示素子 |
JP2001179868A (ja) * | 1999-12-27 | 2001-07-03 | Nitto Denko Corp | 透明積層体の製造方法 |
JP2002170429A (ja) * | 2000-11-29 | 2002-06-14 | C Uyemura & Co Ltd | 高密度触媒核分散層を有する基体並びに改質酸化亜鉛皮膜を有する導電性物品及びその作製方法 |
JP2004342375A (ja) * | 2003-05-13 | 2004-12-02 | Mitsui Chemicals Inc | 発光体 |
JP2006184849A (ja) * | 2004-11-30 | 2006-07-13 | Toppan Printing Co Ltd | 反射防止積層体、光学機能性フィルタ、光学表示装置および光学物品 |
WO2014030324A1 (ja) * | 2012-08-23 | 2014-02-27 | コニカミノルタ株式会社 | 透明金属膜、及びその製造方法 |
WO2014064939A1 (ja) * | 2012-10-24 | 2014-05-01 | コニカミノルタ株式会社 | 透明導電体 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3273744B2 (ja) | 1997-03-26 | 2002-04-15 | 松下電工株式会社 | スイッチング素子駆動回路 |
JP2002015623A (ja) | 2000-04-27 | 2002-01-18 | Mitsui Chemicals Inc | 透明電極 |
JP2003121603A (ja) * | 2001-10-12 | 2003-04-23 | Bridgestone Corp | 反射防止フィルム |
EP1781310B1 (en) * | 2004-08-02 | 2015-10-14 | Ramot at Tel Aviv University Ltd. | Articles of peptide nanostructures and method of forming the same |
JP2006164961A (ja) | 2004-11-09 | 2006-06-22 | Ulvac Seimaku Kk | 積層型透明電極層の製造方法及びこの方法に使用する積層型透明電極形成用の積層体 |
JP2009151963A (ja) | 2007-12-19 | 2009-07-09 | Institute Of Physical & Chemical Research | 透明電極およびその製造方法 |
-
2014
- 2014-03-18 KR KR1020157025307A patent/KR101862915B1/ko active IP Right Grant
- 2014-03-18 US US14/777,606 patent/US9899624B2/en active Active
- 2014-03-18 WO PCT/JP2014/057403 patent/WO2014148512A1/ja active Application Filing
- 2014-03-18 JP JP2015506809A patent/JP6337883B2/ja active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105740A (ja) * | 1993-10-08 | 1995-04-21 | Mitsui Toatsu Chem Inc | 透明導電性フィルム |
JPH0973001A (ja) * | 1995-07-06 | 1997-03-18 | Sony Corp | 反射防止膜 |
JPH10264287A (ja) * | 1997-03-25 | 1998-10-06 | Mitsui Chem Inc | 透明積層体及びそれを用いた調光体及びディスプレイ用フィルター |
JPH11174993A (ja) * | 1997-12-10 | 1999-07-02 | Nippon Sheet Glass Co Ltd | 透明導電膜付き基板およびそれを用いた平面型表示素子 |
JP2001179868A (ja) * | 1999-12-27 | 2001-07-03 | Nitto Denko Corp | 透明積層体の製造方法 |
JP2002170429A (ja) * | 2000-11-29 | 2002-06-14 | C Uyemura & Co Ltd | 高密度触媒核分散層を有する基体並びに改質酸化亜鉛皮膜を有する導電性物品及びその作製方法 |
JP2004342375A (ja) * | 2003-05-13 | 2004-12-02 | Mitsui Chemicals Inc | 発光体 |
JP2006184849A (ja) * | 2004-11-30 | 2006-07-13 | Toppan Printing Co Ltd | 反射防止積層体、光学機能性フィルタ、光学表示装置および光学物品 |
WO2014030324A1 (ja) * | 2012-08-23 | 2014-02-27 | コニカミノルタ株式会社 | 透明金属膜、及びその製造方法 |
WO2014064939A1 (ja) * | 2012-10-24 | 2014-05-01 | コニカミノルタ株式会社 | 透明導電体 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160138328A1 (en) * | 2013-04-10 | 2016-05-19 | Cardinal Ig Company | Multilayer film with electrically switchable optical properties |
US10190363B2 (en) * | 2013-04-10 | 2019-01-29 | Cardinal Ig Company | Multilayer film with electrically switchable optical properties |
WO2017149772A1 (ja) * | 2016-03-04 | 2017-09-08 | パイオニア株式会社 | 発光装置および発光システム |
JPWO2017149772A1 (ja) * | 2016-03-04 | 2018-12-27 | パイオニア株式会社 | 発光装置および発光システム |
US10686155B2 (en) | 2016-03-04 | 2020-06-16 | Pioneer Corporation | Transmission-type light-emitting device and transmission-type light-emitting system for reducing leakage light |
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