WO2014128996A1 - Élément de thermistance à coefficient de température positif de type puce - Google Patents

Élément de thermistance à coefficient de température positif de type puce Download PDF

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Publication number
WO2014128996A1
WO2014128996A1 PCT/JP2013/072706 JP2013072706W WO2014128996A1 WO 2014128996 A1 WO2014128996 A1 WO 2014128996A1 JP 2013072706 W JP2013072706 W JP 2013072706W WO 2014128996 A1 WO2014128996 A1 WO 2014128996A1
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WO
WIPO (PCT)
Prior art keywords
thermistor element
external electrode
tmax
chip
face
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PCT/JP2013/072706
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English (en)
Japanese (ja)
Inventor
有民 西郷
洋 井原木
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株式会社村田製作所
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Publication of WO2014128996A1 publication Critical patent/WO2014128996A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
    • H01C7/025—Perovskites, e.g. titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/148—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element

Definitions

  • the present invention relates to a chip type positive temperature coefficient thermistor element having a volume of 0.12 mm 3 or less.
  • a thermistor element As an example of a conventional chip-type positive temperature coefficient thermistor element (hereinafter simply referred to as a thermistor element), for example, there is one described in Patent Document 1 below.
  • This thermistor element includes a ceramic base having a substantially rectangular parallelepiped shape, and external electrodes provided on both end faces of the thermistor element.
  • Each external electrode has a structure in which a conductive metal layer, a conductive resin layer, and a metal plating layer are laminated.
  • the conductive metal layer is formed immediately above both end faces of the ceramic substrate, and the metal plating layer is the outermost layer.
  • a glass layer is formed on the four side surfaces of the ceramic substrate on which no external electrode is provided in order to improve mechanical strength and the like.
  • the conventional thermistor element is not limited to the one described in Patent Document 1, and is typically used for overheating detection of a heat source. Specifically, the thermistor element is mounted in the vicinity of the heat source. When the temperature of the heat source (that is, the ambient temperature) increases, the temperature of the ceramic substrate increases and the resistance value increases. A power supply voltage is supplied to the thermistor element. Then, a voltage representing the ambient temperature is output between the output terminals of the thermistor element and supplied to the IC. The IC determines whether the heat source is in an overheated state based on the input voltage.
  • miniaturization for example, a volume of 0.12 mm 3 or less
  • miniaturization for example, a volume of 0.12 mm 3 or less
  • Even such a small thermistor element is required to respond at high speed (for example, within 1 second) after the heat source is overheated.
  • a general technique for that purpose is to thermally couple the thermistor element and the heat source with a resin or the like.
  • the cost becomes high.
  • an object of the present invention is to provide a chip-type positive temperature coefficient thermistor element having an element volume of 0.12 [mm 3 ] or less and excellent in responsiveness at low cost.
  • one aspect of the present invention is a chip-type positive temperature coefficient thermistor element having a volume of 0.12 [mm 3 ] or less, and faces in parallel with each other and faces in a predetermined direction.
  • a ceramic substrate having a second end face and a side face connecting the first end face and the second end face, wherein the internal resistance varies with temperature change, the first end face and the second end face.
  • a first external electrode and a second external electrode provided on the end face, the first external electrode and the second external electrode containing metal.
  • a distance d [ ⁇ m] in a predetermined direction between the first end surface and the second end surface is 300 ⁇ d ⁇ 700, and the first external electrode and / or the second external electrode are arranged in a predetermined direction.
  • the thickness tmax [ ⁇ m] at the maximum thickness is tmax ⁇ 0.015 ⁇ d ⁇ 1.5.
  • the first external electrode and / or the second external electrode containing metal has a sufficient thickness tmax ⁇ 0.015 ⁇ d ⁇ 1.5 [ ⁇ m]. Therefore, when the thermistor element is mounted in the vicinity of the heat source, the distance between the first external electrode and / or the second external electrode and the heat source is relatively short, so that heat from the heat source is transmitted to the ceramic base at high speed. As a result, it is possible to provide a thermistor element having excellent responsiveness. Further, since it is not necessary to cover the thermistor element and the heat source with resin or the like, it is possible to detect overheating at a low cost.
  • thermistor element chip type positive temperature coefficient thermistor element (hereinafter simply referred to as a thermistor element) according to an embodiment of the present invention will be described with reference to the drawings.
  • the X axis, the Y axis, and the Z axis shown in FIG. 1 are defined.
  • the X axis, Y axis, and Z axis indicate the left-right direction, the front-rear direction, and the vertical direction of the thermistor element 1.
  • the thermistor element 1 includes a ceramic base 2 and a pair of external electrodes 3a and 3b.
  • the ceramic substrate 2 is made of, for example, a ceramic material in which a predetermined additive is added to BaTiO 3 (barium titanate).
  • the additive is a rare earth, typically Sm (samarium).
  • Sm samarium
  • Nd neodymium
  • La lanthanum
  • the ceramic substrate 2 may have a single plate structure or a laminated structure.
  • FIG. 1 illustrates a single plate structure.
  • the ceramic base 2 has, for example, a substantially rectangular parallelepiped shape that is long in the left-right direction, and at least one connecting the first end surface Sa and the second end surface Sb and the first end surface Sa and the second end surface Sb. And two side surfaces Sc.
  • the end surfaces Sa and Sb are parallel to each other and face each other in the X-axis direction.
  • both end surfaces Sa and Sb have a substantially rectangular shape.
  • the side surface Sc includes the first side surface Sc1 to the fourth side surface Sc4 each having a substantially rectangular shape.
  • the length of the ceramic substrate 2 in the X-axis direction (hereinafter referred to as L dimension) is defined as a distance d [ ⁇ m] between the two end surfaces Sa and Sb. d is selected such that 300 ⁇ d ⁇ 700.
  • the width W in the Y-axis direction and the thickness T in the Z-axis direction are not particularly limited, but the size of the ceramic base 2 is determined so that the entire thermistor element 1 has a volume V of 0.12 [mm 3 ] or less. It is done.
  • the ceramic substrate 2 has a substantially rectangular parallelepiped shape.
  • the actual edge portion of the ceramic substrate 2 is not completely right but rounded.
  • the distance d is not the distance between the rounded portions of the two end surfaces Sa and Sb, but the distance between the planar portions occupying most of the two end surfaces Sa and Sb.
  • External electrodes 3a and 3b are formed on end surfaces Sa and Sb, and have base electrodes 4a and 4b, first plating films 5a and 5b, and second plating films 6a and 6b.
  • the base electrodes 4a and 4b are made of, for example, an Ag—Zn (silver / zinc) alloy and Ag (silver). Specifically, an Ag—Zn alloy layer is ohmic-bonded to each of the end faces Sa and Sb, and an Ag (silver) layer is formed on the Ag—Zn alloy layer.
  • the first plating films 5a and 5b are made of, for example, Ni and are formed on the base electrodes 4a and 4b.
  • the second plating films 6a and 6b are made of, for example, Sn (tin) and are formed on the first plating films 5a and 5b.
  • the maximum thickness tmax is basically the thickness of the portion of the target external electrodes 3a and 3b where the thickness in the X-axis direction (in other words, the normal direction of the end surfaces Sa and Sb) is maximum. .
  • the edge portion of the ceramic substrate 2 is not perfectly right but rounded.
  • the external electrodes 3a and 3b are also formed on the rounded portions of the end surfaces Sa and Sb. The thickness of this portion in the X-axis direction is determined with reference to the extended surface (virtual surface) Sv of the planar portion of the end surfaces Sa and Sb, as indicated by arrows in FIG.
  • the maximum thickness tmax As for the maximum thickness tmax defined as described above, at least a lower limit value is determined. Specifically, when the distance d [ ⁇ m] is 300 ⁇ d ⁇ 700, the maximum thickness tmax is determined as tmax ⁇ 0.015 ⁇ d ⁇ 1.5, as will be described in detail later. Further, the upper limit value of the maximum thickness tmax is set to 120 [ ⁇ m] in order to prevent the occurrence of the tombstone phenomenon when the thermistor element 1 is mounted.
  • An example of the manufacturing process of the thermistor element 1 generally includes the following processes.
  • a BaTiO 3 ceramic powder capable of obtaining desired characteristics is press-molded to a size of 150 [mm] ⁇ 150 [mm]. Thereafter, a predetermined degreasing / firing process is performed on the press-molded ceramic powder. Thereby, a mother substrate is obtained. The mother substrate is lapped until its thickness (corresponding to thickness T) reaches a predetermined value. Thereafter, a strip-shaped substrate having a predetermined width (corresponding to the width W in the front-rear direction) is obtained by dicing cut.
  • the strip-shaped substrate is diced again so that the L dimension is 300 [ ⁇ m] or more and 700 [ ⁇ m] or less (for example, 500 [ ⁇ m]).
  • an Ag—Zn paste that provides an ohmic junction with the ceramic is applied to each of the end surfaces Sa and Sb of the ceramic substrate 2. Thereafter, the ceramic substrate 2 coated with the Ag—Zn-based paste is baked. Then, after a thermosetting Ag paste is applied on the Ag—Zn alloy layer, the Ag paste is heated and cured. Thereby, the base electrodes 4a and 4b are formed. At this time, the maximum thickness tmax [ ⁇ m] of the external electrodes 3a and 3b is set to 0.015 ⁇ d ⁇ 1.5 ⁇ tmax ⁇ 120 (for example, about 80 [ ⁇ m]). The electrodes 4a and 4b are applied on the end surfaces Sa and Sb.
  • the ceramic substrate 2 is moved in the vertical direction, and the end surfaces Sa and Sb are immersed in the electrode paste.
  • the thickness of the base electrodes 4a and 4b is adjusted by controlling the speed of this vertical movement.
  • the thickness of the base electrodes 4a and 4b can be adjusted by adjusting the viscosity of the electrode paste or by scraping the electrode paste once applied to the end surfaces Sa and Sb.
  • first plating films 5a and 5b of Ni are formed on the surfaces of the base electrodes 4a and 4b by electroplating, and then the second plating film 6a of Sn is formed on the first plating films 5a and 5b. , 6b are formed.
  • the thermistor element 1 is completed through the above steps.
  • samples 1 to 9, 14, and 15 are 0.12 [mm 3 ]
  • samples 10 to 13 are 0.18 [mm 3 ].
  • Samples 1 to 3 and 14 are 700 [ ⁇ m]
  • Samples 4 to 6, 12, 13, and 15 are 500 [ ⁇ m]
  • Samples 7 to 9 are 300 [ ⁇ m].
  • Samples 10 and 11 are 1000 [ ⁇ m].
  • Samples 1, 10, and 12 are 9 [ ⁇ m]
  • Samples 2, 5, and 8 are 15 [ ⁇ m]
  • Samples 3, 6, 9, 11, and 13 are 120 [ ⁇ m].
  • sample 4 is 6 [ ⁇ m]
  • samples 7, 14, and 15 are 3 [ ⁇ m].
  • samples 1 to 9 have the element volume V, L dimension d, and maximum thickness tmax of the thermistor element 1. Samples 10-15 are listed in Table 1 for comparison with Samples 1-9.
  • the measurement system M includes any one of samples 1 to 15 and an oscilloscope 10.
  • Each sample 1 to 15 is supplied with a predetermined constant current I. Accordingly, the temperature of the ceramic substrate of each sample 1 to 15 increases, and the resistance value increases.
  • the oscilloscope 10 measures the voltage Vout between both terminals of each sample 1-15.
  • the applicant of the present application measures the initial voltage Vout when the current I is supplied to each of the samples 1 to 15 using the measurement system M as described above. Then, after the current I is supplied, the time until the measurement voltage Vout becomes, for example, 100 times the initial voltage Vout is measured as the response time Tres. According to the measurement results of the present inventors, it has been found that Samples 1 to 9 have an excellent response time of 1 second or less. That is, when the L dimension d [ ⁇ m] is 300 ⁇ d ⁇ 700 and 0.015 ⁇ d ⁇ 1.5 ⁇ tmax, the chip-type positive temperature coefficient thermistor element 1 having excellent responsiveness can be provided. it can.
  • the thermistor element 1 has an excellent response time of 1 second or less as a single element, so that it is not necessary to thermally couple the thermistor element 1 and the heat source with a resin or the like during actual use. As a result, it is possible to detect overheating at a low cost.
  • the chip-type positive temperature coefficient thermistor element according to the present invention has excellent responsiveness and is useful for overheating detection and overcurrent protection of a heat source.

Abstract

L'invention concerne un élément de thermistance à coefficient de température positif de type puce (1) dont le volume d'élément ne dépasse pas 0,12 [mm3]. Afin d'améliorer la capacité de réponse, un tel élément comporte : un matériau de base (2) en céramique qui a des surfaces d'extrémité (Sa, Sb) qui se font face en parallèle dans la direction de l'axe X et des surfaces latérales (Sc) qui relient les surfaces d'extrémité (Sa, Sb) et dont la valeur de résistance change en fonction d'un changement de température ; et une première électrode externe (4) et une seconde électrode externe (4b) contenant du métal qui sont disposées sur les surfaces d'extrémité (Sa, Sb). La distance (d [µm]) dans la direction de l'axe X entre les surfaces d'extrémité (Sa, Sb) est 300 ≤ d ≤ 700, et l'épaisseur de point maximale (tmax [µm]) de l'épaisseur dans la direction de l'axe X de la première électrode externe (4a) et de la seconde électrode externe (4b) est tmax ≥ 0,015 × d − 1,5.
PCT/JP2013/072706 2013-02-21 2013-08-26 Élément de thermistance à coefficient de température positif de type puce WO2014128996A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-031771 2013-02-21
JP2013031771 2013-02-21

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WO2014128996A1 true WO2014128996A1 (fr) 2014-08-28

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092606A (ja) * 1996-09-13 1998-04-10 Mitsubishi Materials Corp チップ型サーミスタ及びその製造方法
JPH1183641A (ja) * 1997-09-08 1999-03-26 Kurabe Ind Co Ltd ガラス封止型サーミスタ
JP2006108221A (ja) * 2004-10-01 2006-04-20 Shibaura Electronics Co Ltd 高温耐熱型サーミスタ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4492737B2 (ja) * 2008-06-16 2010-06-30 株式会社村田製作所 電子部品
CN102483978B (zh) * 2009-08-28 2015-03-11 株式会社村田制作所 热敏电阻及其制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092606A (ja) * 1996-09-13 1998-04-10 Mitsubishi Materials Corp チップ型サーミスタ及びその製造方法
JPH1183641A (ja) * 1997-09-08 1999-03-26 Kurabe Ind Co Ltd ガラス封止型サーミスタ
JP2006108221A (ja) * 2004-10-01 2006-04-20 Shibaura Electronics Co Ltd 高温耐熱型サーミスタ

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TW201434056A (zh) 2014-09-01

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