WO2014089861A1 - 基于氮的双受主共掺氧化锌薄膜的制备方法 - Google Patents

基于氮的双受主共掺氧化锌薄膜的制备方法 Download PDF

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WO2014089861A1
WO2014089861A1 PCT/CN2012/086951 CN2012086951W WO2014089861A1 WO 2014089861 A1 WO2014089861 A1 WO 2014089861A1 CN 2012086951 W CN2012086951 W CN 2012086951W WO 2014089861 A1 WO2014089861 A1 WO 2014089861A1
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source
deposition
doping
nitrogen
thin film
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French (fr)
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卢维尔
夏洋
李超波
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中国科学院微电子研究所
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides

Definitions

  • the invention relates to the technical field of preparation and doping of an oxidized film, and in particular to a method for preparing a nitrogen-based double acceptor co-doped oxidized film. Background technique
  • ZnO Oxidation
  • ZnO thin films have low growth temperature, good radiation resistance, stimulated radiation with low threshold power and high energy conversion efficiency. These advantages make ZnO become optoelectronics, microelectronics, and information.
  • the double acceptor co-doping technology has been studied, mainly including Li-N, N-As and NP double acceptor doping techniques.
  • Krtschil et al. used the MOVPE technology to fabricate N-As double acceptor co-doped ZnO thin films. It was found that the N or As doped ZnO thin films do not have p-type conductivity, ie the doping characteristics are very good.
  • Non-uniform which is the source of the instability of the p-type ZnO doped by the main acceptor; in contrast, for the N-As doped ZnO thin film, almost the entire film is p-type conductive, n-type conductive The area is almost non-existent, and the repeatability and stability of p-type ZnO have been greatly improved. According to reports, N-As The p-type conductivity of double acceptor doped ZnO thin films can be stable for several months, see: Krtschil et al, Appl. Phys. Lett., 87, 262105, 2005. In 2007, Vlasenflin et al.
  • Atomic Layer Deposition has excellent controllability on the composition and thickness of the film.
  • the prepared film has good shape retention, high purity and uniformity, and is widely used in the production of high quality film materials. It has developed rapidly and has become a film preparation technology with both technical advantages and market potential. Therefore, expanding the application range of ALD technology and seeking dual acceptor co-doping technology using ALD technology has immeasurable scientific and application value for the preparation of p-type ZnO thin films.
  • the technical problem to be solved by the present invention is to provide a method for preparing a nitrogen-based double acceptor co-doped oxidized film which can be doped with As and N elements in an oxidized film.
  • the present invention provides a method for preparing a nitrogen-based double acceptor co-doped oxidized film, comprising:
  • the substrate is placed in a reaction chamber of an atomic layer deposition apparatus; a multi-component composite deposition is performed; the composite deposition includes introduction of a deposition of an As dopant source and introduction of a nitrogen impurity prior to deposition of the oxygen source prior to the deposition of the source. Deposition of the source; the multi-component composite is cyclically deposited to obtain a double acceptor co-doped oxidized film of N-As prepared by atomic layer deposition.
  • the substrate is a silicon wafer, sapphire or glass which has been treated with concentrated sulfuric acid and hydrogen peroxide and supersonicized with ultrapure water, and has a hydroxyl group on the surface of the substrate.
  • the deposition order of the As doping source refers to deposition of an As doping source before deposition of the Zn source, deposition into the chamber at the same time as Zn deposition, or deposition of the first Zn source.
  • the composite deposition includes sequentially using an As doping source, a source, and a vacuum in a vacuum environment.
  • the nitrogen doping source and the oxygen source are deposited to obtain an N-As double acceptor co-doped ZnO thin film.
  • the exposure time of the As doping source, the source, the nitrogen doping source and the oxygen source in the deposition chamber are 0.08 s, 0.075 s, 5 s, 0.08 s, 50 s, and the substrate temperature is 300 ° C. .
  • the deposition chamber was cleaned with high purity nitrogen after each deposition.
  • the source of the word is an alkyl compound or a compound containing a word
  • the oxygen source is a water vapor or an oxygen plasma
  • the nitrogen dopant source is N 2 0, N 2 , NO, NO 2 or NH 3
  • the As doping source is an As-containing alkylate, an As-containing hydride or an As-containing halide.
  • the word-containing compound is a chlorinated ZnCh
  • the hydrazine-containing alkyl compound is diethyl Zn(C 2 H 5 ) 2 or dimethyl Zn(CH 3 ) 2
  • the alkyl group containing As is methyl arsenic As (CH 3 ) 3 or triethyl arsenic As (CH 2 CH 3 ) 3
  • the As-containing hydride is hydrogen arsenic AsH 3 .
  • the preparation method further comprises adjusting a ratio of nitrogen doping source to oxygen in the doped oxidation film by controlling a ventilation time of the nitrogen doping source and water; controlling aeration time of the As doping source and the source To adjust the ratio of A s doping to rhetoric in the doped oxidized film.
  • the preparation method of the nitrogen-based double acceptor co-doped oxidation film provided by the invention uses the ALD technology to complete the co-doping of the whole film structure in the process of the growth of the oxidation film, and obtain the co-doping of the N-As double acceptor. .
  • the preparation process of the invention is simple, and the deposition and doping processes are easy to control.
  • the preparation of the co-doped oxidized film is beneficial to the p-type doping of the oxidized film and the stability of the p-type electrical property.
  • FIG. 1 is a schematic flow chart of a method for preparing a nitrogen-based double acceptor co-doped oxidized film according to an embodiment of the present invention.
  • a method for preparing a nitrogen-based double acceptor co-doped oxidized film includes:
  • the vacuum is applied and the bottom of the village, the chamber and the pipeline are heated to achieve various working environments required for the experiment, wherein the temperature at the bottom of the village is 300 °C.
  • a group V dopant source As(CH 3 ) 3 is introduced into the reaction chamber of the ALD device, and the dopant source is deposited as an acceptor dopant on the surface of the substrate, and then the reaction chamber is purged with a N 2 carrier gas.
  • the access time of the doping source is 0.08 s, and the purge time of N2 is 50 s.
  • the source Zn(C 2 H 5 ) 2 is introduced into the reaction chamber, and the group whose surface is not reacted with the As dopant source reacts with the source to form an oxygen bond; the reaction chamber is purged with a carrier gas; The source has a pass time of 0.075 s and a N 2 purge time of 50 s.
  • the RF plasma is activated, and N 2 plasma is introduced into the reaction chamber as another acceptor doping source N, and the reaction chamber is purged with N 2 carrier gas; wherein the plasma is introduced for 5 s, discharge The power is 50 W, the discharge time is 10 s, and the purge time of the carrier gas N2 is 50 s.
  • Water is introduced into the reaction chamber as an oxygen source, and the water reacts with the -Zn-C 2 H 5 group which is not reacted by the N 2 plasma to form a Zn-OH bond, and reacts with the -As-CH 3 group to form As- OH; wherein the water inlet time is 0.08 s and the N 2 purge time is 50 s.

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Abstract

本发明公开基于氮的双受主共掺氧化锌薄膜的制备方法，其包括：将基片放入原子层沉积设备的反应腔室中；进行多组分的复合沉积；所述复合沉积包括在锌源沉积之前引入一次As掺杂源的沉积和氧源沉积之前引入一次氮掺杂源的沉积；循环沉积该多组分复合体，得到原子层沉积制备的N-As的双受主共掺的氧化锌薄膜。本发明提供的基于氮的双受主共掺氧化锌薄膜的制备方法，利用ALD技术，在氧化锌薄膜生长的过程中，完成整个薄膜结构的共掺，得到N-As双受主的共掺。本发明制备工艺筒单，沉积和掺杂过程易于控制，制备所得共掺氧化锌薄膜有利于氧化锌薄膜的p型掺杂和提高p型电学性质的稳定性。

Description

基于氮的双受主共掺氧化锌薄膜的制备方法
技术领域
本发明涉及氧化辞薄膜的制备与掺杂技术领域， 具体涉及一种基于氮 的双受主共掺氧化辞薄膜的制备方法。 背景技术
氧化辞 (ZnO)作为一种新型的 II - VI族直接带隙宽禁带化合物，具有大 的室温禁带宽度 3.37 eV, 而且自由激子结合能高达 60 meV, 作为半导体材 料越来越受到人们的重视。 与其它宽禁带半导体材料相比， ZnO薄膜生长 温度低，抗辐射性好， 受激辐射有较低的阈值功率和很高的能量转换效率， 这些优点使 ZnO正成为光电子、 微电子、 信息等高新技术的关键基础材料。 然而本征 ZnO由于存在缺陷， 使得 ZnO呈 n型， p型 ZnO薄膜制备是目前 ZnO 相关研究的热点和难点。氮掺杂虽然在理论上的计算使得 p型 ZnO的制备成 为可能， 但是众多实验表明， 可能是由于掺入的 N原子会结合形成 N分子， 占据置换位置 ((N2)o), 形成一种双施主缺陷， 导致单独 N掺杂 ZnO薄膜的不 稳定性。 为了解决该问题， 目前共掺被认为是制备出相对稳定的 p-ZnO薄 膜最有发展前景的方向之一。
为了提高 p型 ZnO薄膜的稳定性， 人们对双受主共掺杂技术进行了研 究， 主要包括 Li-N、 N-As和 N-P双受主掺杂技术。 2005年， Krtschil等人利 用 MOVPE技术制备出了 N-As双受主共掺杂 ZnO薄膜，研究发现单独 N或 As 掺杂的 ZnO薄膜并非整个样品都具有 p型导电性能， 即掺杂特性很不均匀， 这是单独受主掺杂 p型 ZnO不稳定性的根源； 与此相对， 对于 N-As双受主掺 杂的 ZnO薄膜而言， 几乎整个薄膜都是 p型导电， n型导电的区域几乎不存 在了， 因而 p型 ZnO的可重复性和稳定性都有了大幅度提高。 据报道， N-As 双受主掺杂 ZnO薄膜的 p型导电性能可以稳定存在几个月之久， 参见： Krtschil等, Appl. Phys. Lett. , 87 , 262105 , 2005。 2007年， Vlasenflin等人 [30]利用超声喷雾热分解技术制备出 N-P双受主掺杂的 ZnO薄膜。 研究者认 为， 在 N-P双受主掺杂 ZnO中， 形成 PZn-2VZn。 复合体受主， 并可能进一步 形成 No-PZn-2VZn的双受主复合体， 参见： Vlasenflin等， Solid State
Communications, 142, 292-294, 2007。
原子层沉积技术 (ALD)对薄膜的成分和厚度具有出色地控制能力， 所 制备的薄膜保形性好、 纯度高且均匀性好， 被广泛的应用于制取高质量的 薄膜材料， 并得到了迅速发展， 成为一种既有技术上的优势， 又有市场潜 力的薄膜制备技术。 因此， 扩展 ALD技术的应用范围， 寻求采用 ALD技术 的双受主共掺技术，对于 p型 ZnO薄膜的制备具有不可估量的科学和应用价 值。
发明内容
本发明所要解决的技术问题是提供一种可以将 As与 N元素共同掺杂 在氧化辞薄膜中的基于氮的双受主共掺氧化辞薄膜的制备方法。
为解决上述技术问题，本发明提供了一种基于氮的双受主共掺氧化辞 薄膜的制备方法， 包括：
将基片放入原子层沉积设备的反应腔室中； 进行多组分的复合沉积； 所述复合沉积包括在辞源沉积之前引入一次 As掺杂源的沉积和氧源 沉积之前引入一次氮掺杂源的沉积； 循环沉积该多组分复合体， 得到原子 层沉积制备的 N - A s的双受主共掺的氧化辞薄膜。
进一步地， 所述基片是经过浓硫酸和双氧水处理， 并经超纯水超声过 的硅片、 蓝宝石或玻璃， 村底表面带有羟基。
进一步地， 所述 As掺杂源的沉积顺序是指在 Zn源沉积之前、 与 Zn同 时通入腔室进行沉积或先 Zn源沉积之后沉积 As掺杂源。
进一步地， 所述复合沉积包括在真空环境下依次用 As掺杂源、 辞源、 氮掺杂源和氧源进行沉积得到 N-As双受主共掺的 ZnO薄膜。
进一步地， 所述 As掺杂源、 辞源、 氮掺杂源和氧源在沉积室内暴露时 间依次为 0.08 s、 0.075 s、 5 s、 0.08 s、 50 s, 基片村底温度为 300 °C。
进一步地， 在每次沉积之后采用高纯氮气清洗沉积室。
进一步地， 所述辞源是含辞的烷基化合物或含辞的 化物， 所述氧源 是水蒸汽或氧气等离子体； 所述氮掺杂源为 N20、 N2、 NO、 NO2或 NH3等 离子体，所述 As掺杂源是含 As的烷基化物、含 As的氢化物或含 As的卤化物。
进一步地， 所述含辞的 化物是氯化辞 ZnCh, 所述含辞的烷基化合 物是二乙基辞 Zn(C2H5)2或二甲基辞 Zn(CH3)2 , 所述含 As的烷基化物是甲基 砷 As(CH3)3或三乙基砷 As(CH2CH3)3, 所述含 As的氢化物是氢化砷 AsH3。
进一步地，该制备方法还包括通过控制所述的氮掺杂源与水的通气时 间来调节掺杂氧化辞薄膜中氮掺杂源与氧的比例； 通过控制 As掺杂源与辞 源的通气时间来调节掺杂氧化辞薄膜中 A s掺杂与辞的比例。
本发明提供的基于氮的双受主共掺氧化辞薄膜的制备方法，利用 ALD 技术， 在氧化辞薄膜生长的过程中， 完成整个薄膜结构的共掺， 得到 N-As 双受主的共掺。 本发明制备工艺筒单， 沉积和掺杂过程易于控制， 制备所 得共掺氧化辞薄膜有利于氧化辞薄膜的 p型掺杂和提高 p型电学性质的稳定 性。
附图说明
图 1为本发明实施例提供的基于氮的双受主共掺氧化辞薄膜的制备方 法流程示意图。
具体实施方式
参见图 1 , 本发明实施例提供的一种基于氮的双受主共掺氧化辞薄膜 的制备方法包括：
将硅村底或者玻璃村底用浓硫酸双氧水进行处理， 再用超纯水超声波 进行清洗， N2吹干， 其中浓硫酸： 双氧水 = 4 : 1 , 使得村底表面带有羟基 (-OH)。
抽真空并对村底、腔室和管道进行加热， 达到实验所需各种工作环境， 其中村底温度为 300 °C。
向 ALD设备反应腔室中通入一种 V族掺杂源者 As(CH3)3, 该掺杂源 作为受主掺杂源沉积在村底表面，之后采用 N2载气吹扫反应腔室； 其中掺 杂源的通入时间为 0.08 s , N2的吹扫时间为 50 s。
向反应腔室中通入辞源 Zn(C2H5)2, 村底表面未与 As掺杂源反应的基 团与辞源反应形成辞氧键； 采用载气吹扫反应腔室； 其中掺杂源的通入时 间为 0.075 s , N2的吹扫时间为 50 s。
启动射频等离子体， 向反应腔室中通入 N2等离子体，作为另一受主掺 杂源 N, 采用 N2载气吹扫反应腔室； 其中等离子体的通入时间为 5 s, 放 电功率为 50 W, 放电时间为 10 s, 载气 N2的吹扫时间为 50 s。
向反应腔室中通入水作为氧源， 水与未被 N2等离子体反应的 -Zn-C2H5 基团发生反应形成 Zn-OH键， 与 -As-CH3基团反应形成 As-OH; 其中水的 通入时间为 0.08 s , N2的吹扫时间为 50 s。
重复上述循环沉积 N-As共掺的 ZnO薄膜。 辞薄膜， 其中 As在 ZnO中替辞的位置 (VZn), N替代 0的位置， 在薄膜中 形成一定的复合体，双受主的共掺有利于对 p型 ZnO的可重复性和稳定性 都有大幅度的提高。
而非限制， 尽管参照实例对本发明进行了详细说明， 本领域的普通技术人 员应当理解， 可以对本发明的技术方案进行修改或者等同替换， 而不脱离 本发明技术方案的精神和范围，其均应涵盖在本发明的权利要求范围当中。

Claims

权 利 要 求 书
1.一种基于氮的双受主共掺氧化辞薄膜的制备方法， 其特征在于， 包 括：
将基片放入原子层沉积设备的反应腔室中； 进行多组分的复合沉积； 所述复合沉积包括在辞源沉积之前引入一次 As掺杂源的沉积和氧源 沉积之前引入一次氮掺杂源的沉积； 循环沉积该多组分复合体， 得到原子 层沉积制备的 N- As的双受主共掺的氧化辞薄膜。
2.根据权利要求 1所述的制备方法， 其特征在于， 所述基片是经过浓 硫酸和双氧水处理， 并经超纯水超声过的硅片、 蓝宝石或玻璃， 村底表面 带有羟基。
3.根据权利要求 2所述的制备方法， 其特征在于，
所述 As掺杂源的沉积顺序是指在 Zn源沉积之前、 与 Zn同时通入腔室 进行沉积或先 Zn源沉积之后沉积 As掺杂源。
4.根据权利要求 3所述的制备方法， 其特征在于， 所述复合沉积包括： 在真空环境下依次用 As掺杂源、辞源、 氮掺杂源和氧源进行沉积得到
N-As双受主共掺的 ZnO薄膜。
5.根据权利要求 4所述的制备方法， 其特征在于， 所述 As掺杂源、 辞 源、 氮掺杂源和氧源在沉积室内暴露时间依次为 0.08 s、 0.075 s、 5 s、 0.08 s、 50 s, 基片村底温度为 300 °C。
6.根据权利要求 5所述的制备方法， 其特征在于， 在每次沉积之后采 用高纯氮气清洗沉积室。
7.根据权利要求 1-6任一项所述的制备方法， 其特征在于， 所述辞源是 含辞的烷基化合物或含辞的 化物， 所述氧源是水蒸汽或氧气等离子体； 所述氮掺杂源为 N20、 N2、 NO、 NO2或 NH3等离子体， 所述 As掺杂源是含 As的烷基化物、 含 As的氢化物或含 As的卤化物。
8.根据权利要求 7所述的制备方法， 其特征在于， 所述含辞的 化物 是氯化辞 ZnCh, 所述含辞的烷基化合物是二乙基辞 Zn(C2H5)2或二甲基辞 Zn(CH3)2, 所述含 As的烷基化物是甲基砷 As(CH3)3或三乙基砷
As(CH2CH3)3 , 所述含 As的氢化物是氢化砷 AsH3。
9.根据权利要求 7所述的制备方法， 其特征在于， 还包括：
通过控制所述的氮掺杂源与水的通气时间来调节掺杂氧化辞薄膜中 氮掺杂源与氧的比例； 通过控制 A s掺杂源与辞源的通气时间来调节掺杂氧 化辞薄膜中 A s掺杂与辞的比例。
PCT/CN2012/086951 2012-12-11 2012-12-19 基于氮的双受主共掺氧化锌薄膜的制备方法 WO2014089861A1 (zh)

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