WO2014080774A1 - 光化学反応装置 - Google Patents
光化学反応装置 Download PDFInfo
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- WO2014080774A1 WO2014080774A1 PCT/JP2013/080198 JP2013080198W WO2014080774A1 WO 2014080774 A1 WO2014080774 A1 WO 2014080774A1 JP 2013080198 W JP2013080198 W JP 2013080198W WO 2014080774 A1 WO2014080774 A1 WO 2014080774A1
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- Prior art keywords
- catalyst layer
- reduction
- oxidation
- photochemical reaction
- layer
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- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/50—Processes
- C25B1/55—Photoelectrolysis
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/02—Electrodes; Manufacture thereof not otherwise provided for characterised by shape or form
- C25B11/03—Electrodes; Manufacture thereof not otherwise provided for characterised by shape or form perforated or foraminous
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B3/00—Electrolytic production of organic compounds
- C25B3/20—Processes
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
- C25B9/70—Assemblies comprising two or more cells
- C25B9/73—Assemblies comprising two or more cells of the filter-press type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Definitions
- the present invention relates to a photochemical reaction device.
- Plants use a system that excites light energy in two stages, called the Z scheme.
- plants obtain electrons from water (H 2 O) and reduce carbon dioxide (CO 2 ) to synthesize cellulose and saccharides.
- Patent Document 1 discloses, as a photochemical reaction device, an oxidation reaction electrode that oxidizes H 2 O to generate oxygen (O 2 ), and a reduction reaction electrode that reduces CO 2 to generate a carbon compound.
- the oxidation reaction electrode is provided with an oxidation catalyst for oxidizing H 2 O on the surface of the photocatalyst, and obtains a potential by light energy.
- the reduction reaction electrode is provided with a reduction catalyst for reducing CO 2 on the surface of the photocatalyst, and is connected to the oxidation reaction electrode with an electric wire.
- the reduction reaction electrode obtains a reduction potential of CO 2 from the oxidation reaction electrode, thereby reducing CO 2 to generate formic acid (HCOOH).
- HCOOH formic acid
- the solar energy conversion efficiency is as low as about 0.04%. This is due to the low energy efficiency of the photocatalyst excited with visible light. Further, since the reduction reaction electrode is connected to the oxidation reaction electrode by the electric wire, the efficiency of taking out electricity (current) is reduced by the wiring resistance, and as a result, the efficiency is lowered.
- Patent Document 2 a configuration is considered in which a silicon solar cell is used in order to obtain a reaction potential, and a catalyst is provided on both sides to cause a reaction.
- an electrolytic reaction of H 2 O is performed by using a structure in which silicon solar cells are stacked in order to obtain a reaction potential, and providing a catalyst on both surfaces thereof.
- the solar energy conversion efficiency in these is as high as 2.5%.
- this device has a structure that does not require wiring, it is easy to increase the size. Further, since the cell itself can act as a partition plate to isolate the product, the product separation step is unnecessary.
- JP 2011-094194 A Japanese Patent Laid-Open No. 10-290017 S. Y. Reece, et al., Science. Vol.334. Pp.645 (2011)
- a photochemical reaction device having a CO 2 decomposition technology with high photoreaction efficiency.
- the photochemical reaction device includes an oxidation catalyst layer that oxidizes water to generate oxygen and protons, a reduction catalyst layer that reduces carbon dioxide to generate a carbon compound, the oxidation catalyst layer, and the reduction catalyst layer. And a semiconductor layer that separates charges by light energy, and an ion transfer path that moves ions between the oxidation catalyst layer side and the reduction catalyst layer side. .
- Sectional drawing which shows the structure of the photochemical reaction cell which concerns on embodiment Sectional drawing which shows the operation
- Sectional drawing which shows the structure of the modification 4 in the photochemical reaction apparatus which concerns on 1st Embodiment.
- the top view which shows the structure of the photochemical reaction apparatus which concerns on 1st Embodiment.
- the top view which shows the structure of the photochemical reaction apparatus which concerns on 1st Embodiment.
- the top view which shows the structure of the photochemical reaction apparatus which concerns on 1st Embodiment.
- Sectional drawing which shows the structure of the photochemical reaction apparatus which concerns on 2nd Embodiment.
- the graph which shows the relationship between the periodic width of the through-hole in the photochemical reaction apparatus which concerns on 2nd Embodiment, and the light absorption rate by a multijunction solar cell.
- FIG. 6 is a plan view showing the structure of a photochemical reaction device in Example 3. Sectional drawing which shows the structure of the photochemical reaction apparatus in Example 3. FIG. Sectional drawing which shows the electrolytic vessel which measures the photochemical reaction apparatus in Example 3 and a comparative example.
- Photochemical Reaction Cell The photochemical reaction cell according to this embodiment will be described below with reference to FIGS. 1 and 2.
- FIG. 1 is a cross-sectional view showing the structure of the photochemical reaction cell according to this embodiment.
- the photochemical reaction cell includes a substrate 11, a reflective layer 12, a reduction electrode layer 13, a multijunction solar cell 17, an oxidation electrode layer 18, an oxidation catalyst layer 19, and a reduction catalyst layer. 20 is provided. On the surface (light incident surface) of the substrate 11, a reflective layer 12, a reduction electrode layer 13, a multijunction solar cell 17, an oxidation electrode layer 18, and an oxidation catalyst layer 19 are formed. On the other hand, a reduction catalyst layer 20 is formed on the back surface of the substrate 11.
- the substrate 11 is provided to support the photochemical reaction cell and increase its mechanical strength.
- the substrate 11 has conductivity and is made of a metal plate such as Cu, Al, Ti, Ni, Fe, or Ag, or an alloy plate such as SUS including at least one of them.
- the substrate 11 may be made of a conductive resin or the like.
- the substrate 11 may be composed of a semiconductor substrate such as Si or Ge. As will be described later, the substrate 11 may be formed of an ion exchange membrane.
- the reflective layer 12 is formed on the surface of the substrate 11.
- the reflection layer 12 is made of a material capable of reflecting light, and is made of, for example, a distributed Bragg reflection layer made of a metal layer or a semiconductor multilayer film.
- the reflection layer 12 is formed between the substrate 11 and the multijunction solar cell 17, thereby reflecting light that could not be absorbed by the multijunction solar cell 17 and entering the multijunction solar cell 17 again. Let Thereby, the light absorption rate in the multijunction solar cell 17 can be improved.
- the reducing electrode layer 13 is formed on the reflective layer 12.
- the reduction electrode layer 13 is formed on the surface of the n-type semiconductor layer (an n-type amorphous silicon layer 14a described later) of the multi-junction solar cell 17. For this reason, it is desirable that the reduction electrode layer 13 be made of a material that can make ohmic contact with the n-type semiconductor layer.
- the reduction electrode layer 13 is made of, for example, a metal such as Ag, Au, Al, or Cu, or an alloy containing at least one of them.
- the reduction electrode layer 13 is made of transparent conductive oxide such as ITO (Indium Tin Oxide) zinc oxide (ZnO), FTO (fluorine-doped tin oxide), AZO (aluminum-doped zinc oxide), or ATO (antimony-doped tin oxide). Composed of things.
- the reduction electrode layer 13 is, for example, a structure in which a metal and a transparent conductive oxide are laminated, a structure in which a metal and another conductive material are combined, or a composite of a transparent conductive oxide and another conductive material. It may be configured with a structured.
- the multi-junction solar cell 17 is formed on the reduction electrode layer 13 and includes a first solar cell 14, a second solar cell 15, and a third solar cell 16.
- Each of the first solar cell 14, the second solar cell 15, and the third solar cell 16 is a solar cell using a pin junction semiconductor and has different light absorption wavelengths. By laminating these in a planar shape, the multi-junction solar cell 17 can absorb light with a wide wavelength of sunlight, and can utilize solar energy more efficiently. Moreover, since each solar cell is connected in series, a high open circuit voltage can be obtained.
- the first solar cell 14 includes an n-type amorphous silicon (a-Si) layer 14a, an intrinsic amorphous silicon germanium (a-SiGe) layer 14b, p formed in order from the lower side.
- a-Si n-type amorphous silicon
- a-SiGe intrinsic amorphous silicon germanium
- ⁇ c-Si microcrystalline silicon
- the a-SiGe layer 14b is a layer that absorbs light in a short wavelength region of about 400 nm. That is, in the first solar cell 14, charge separation occurs due to light energy in the short wavelength region.
- the second solar cell 15 includes an n-type a-Si layer 15a, an intrinsic a-SiGe layer 15b, and a p-type ⁇ c-Si layer 15c, which are sequentially formed from the lower side.
- the a-SiGe layer 15b is a layer that absorbs light in the intermediate wavelength region of about 600 nm. That is, in the second solar cell 15, charge separation occurs due to light energy in the intermediate wavelength region.
- the third solar cell 16 includes an n-type a-Si layer 16a, an intrinsic a-Si layer 16b, and a p-type ⁇ c-Si layer 16c formed in this order from the lower side.
- the a-Si layer 16b is a layer that absorbs light in a long wavelength region of about 700 nm. That is, in the third solar cell 16, charge separation occurs due to light energy in the long wavelength region.
- the multijunction solar cell 17 charge separation occurs due to light in each wavelength region. That is, holes are separated on the positive electrode side (front surface side) and electrons are separated on the negative electrode side (back surface side). Thereby, the multijunction solar cell 17 generates an electromotive force.
- the multi-junction solar cell 17 configured with a stacked structure of three solar cells has been described as an example, but the present invention is not limited thereto.
- the multi-junction solar cell 17 may be composed of a laminated structure of two or four or more solar cells. Alternatively, one solar cell may be used instead of the multi-junction solar cell 17.
- the solar cell using a pin junction semiconductor was demonstrated, the solar cell using a pn junction type semiconductor may be sufficient.
- the example comprised by Si and Ge was shown as a semiconductor layer, it is not restricted to this, For example, you may comprise by GaAs, GaInP, AlGaInP, CdTe, CuInGaSe.
- various forms such as single crystal, polycrystal, and amorphous can be applied.
- the oxidation electrode layer 18 is formed on the multi-junction solar cell 17.
- the oxidation electrode layer 18 is formed on the p-type semiconductor layer (p-type ⁇ c-Si layer 16c) surface of the multi-junction solar cell 17.
- the oxidation electrode layer 18 be made of a material capable of ohmic contact with the p-type semiconductor layer.
- the oxidation electrode layer 18 is made of, for example, a metal such as Ag, Au, Al, or Cu, or an alloy containing at least one of them.
- the oxidation electrode layer 18 is made of a transparent conductive oxide such as ITO, ZnO, FTO, AZO, or ATO.
- the oxidation electrode layer 18 has, for example, a structure in which a metal and a transparent conductive oxide are laminated, a structure in which a metal and other conductive materials are combined, or a combination of a transparent conductive oxide and other conductive materials. It may be configured with a structured.
- the irradiation light passes through the oxidation electrode layer 18 and reaches the multi-junction solar cell 17.
- the oxidation electrode layer 18 disposed on the light irradiation surface side has light transmittance with respect to the irradiation light. More specifically, the permeability of the oxidation electrode layer 18 on the irradiation surface side is preferably at least 10% or more, more preferably 30% or more, of the irradiation amount of irradiation light.
- the oxidation catalyst layer 19 is formed on the oxidation electrode layer 18.
- the oxidation catalyst layer 19 is formed on the positive electrode side of the multi-junction solar cell 17 and oxidizes H 2 O to generate O 2 and H + .
- the oxidation catalyst layer 19 is made of a material that reduces activation energy for oxidizing H 2 O. In other words, it is made of a material that reduces the overvoltage when H 2 O is oxidized to generate O 2 and H + .
- the form of the oxidation catalyst layer 19 is not limited to a thin film, but may be a lattice, a particle, or a wire.
- the irradiation light passes through the oxidation catalyst layer 19 and reaches the multi-junction solar cell 17 in the same manner as the oxidation electrode layer 18.
- the oxidation catalyst layer 19 disposed on the light irradiation surface side is light transmissive to the irradiation light. More specifically, the permeability of the oxidation catalyst layer 19 on the irradiation surface side is at least 10% or more, more desirably 30% or more, of the irradiation amount of irradiation light.
- the reduction catalyst layer 20 is formed on the back surface of the substrate 11.
- the reduction catalyst layer 20 is formed on the negative electrode side of the multi-junction solar cell 17 and reduces CO 2 to reduce carbon dioxide (for example, carbon monoxide (CO), formic acid (HCOOH), methane (CH 4 ), methanol ( CH 3 OH), ethanol (C 2 H 5 OH), etc.).
- CO carbon monoxide
- HCOOH formic acid
- CH 4 methane
- CH 3 OH methane
- C 2 H 5 OH ethanol
- the reduction catalyst layer 20 is made of a material that reduces activation energy for reducing CO 2 . In other words, it is composed of a material that reduces the overvoltage when CO 2 is reduced to produce a carbon compound.
- the form of the reduction catalyst layer 20 is not limited to a thin film shape, and may be a lattice shape, a particle shape, or a wire shape.
- the arrangement relationship between the polarity of the multi-junction solar cell 17 and the substrate 11 is arbitrary.
- the oxidation catalyst layer 19 is disposed on the light incident surface side, but the reduction catalyst layer 20 may be disposed on the light incident surface side. That is, in the photochemical reaction cell, the positions of the oxidation catalyst layer 19 and the reduction catalyst layer 20, the positions of the oxidation electrode layer 18 and the reduction electrode layer 13, and the polarity of the multijunction solar cell may be interchanged. In this case, it is desirable that the reduction catalyst layer 20 and the reduction electrode layer 13 have transparency.
- a protective layer is disposed on the surface of the multi-junction solar cell 17 or between the electrode layer on the light irradiation surface side and the catalyst layer (between the oxidation electrode layer 18 and the oxidation catalyst layer 19 in this example). May be.
- the protective layer has conductivity and prevents corrosion of the multijunction solar cell 17 in the oxidation-reduction reaction. As a result, the lifetime of the multijunction solar cell 17 can be extended.
- a protective layer has a light transmittance as needed.
- As the protective layer for example TiO 2, ZrO 2, Al2O 3 , SiO 2, or a dielectric thin film of HfO 2 and the like.
- the film thickness is preferably 10 nm or less, more preferably 5 nm or less in order to obtain conductivity by the tunnel effect.
- FIG. 2 is a cross-sectional view showing the operation principle of the photochemical reaction cell according to the present embodiment.
- the reflection layer 12, the reduction electrode layer 13, and the oxidation electrode layer 18 are omitted.
- the multi-junction solar cell 17 absorbs light, it generates photoexcited electrons and holes paired therewith and separates them. That is, in each solar cell (the first solar cell 14, the second solar cell 15, and the third solar cell 16), the photoexcited electrons move to the n-type semiconductor layer side (reduction catalyst layer 20 side), and the p-type Charge separation occurs in which holes generated as pairs of photoexcited electrons move to the semiconductor layer side (oxidation catalyst layer 19 side). Thereby, an electromotive force is generated in the multi-junction solar cell 17.
- the photoexcited electrons generated in the multi-junction solar cell 17 are used for the reduction reaction in the reduction catalyst layer 20 that is the negative electrode, and the holes are used for the oxidation reaction in the oxidation catalyst layer 19 that is the positive electrode. .
- the reaction of the formula (1) occurs near the oxidation catalyst layer 19 and the reaction of the formula (2) occurs near the reduction catalyst layer 20.
- the multi-junction solar cell 17 needs to have an open circuit voltage equal to or higher than the potential difference between the standard oxidation-reduction potential of the oxidation reaction occurring in the oxidation catalyst layer 19 and the standard oxidation-reduction potential of the reduction reaction occurring in the reduction catalyst layer 20.
- the standard redox potential of the oxidation reaction in the formula (1) is 1.23 [V]
- the standard redox potential of the reduction reaction in the formula (2) is ⁇ 0.1 [V].
- the open voltage of the multi-junction solar cell 17 needs to be 1.33 [V] or more. More preferably, the open circuit voltage needs to be equal to or greater than the potential difference including the overvoltage. More specifically, for example, when the overvoltage of the oxidation reaction in Formula (1) and the reduction reaction in Formula (2) is 0.2 [V], the open circuit voltage may be 1.73 [V] or more. desirable.
- Photochemical Reaction Device A photochemical reaction device using the photochemical reaction cell according to the present embodiment will be described below with reference to FIGS.
- the photochemical reaction device includes an oxidation catalyst layer 19, a reduction catalyst layer 20, a photochemical reaction cell including a stacked body of multijunction solar cells 17 formed therebetween, an oxidation catalyst
- An ion movement path for moving ions between the layer 19 and the reduction catalyst layer 20 is an example. Accordingly, H + produced on the oxidation catalyst layer 19 side can be moved to the reduction catalyst layer 20 with high photoreaction efficiency, and carbon dioxide can be decomposed on the reduction catalyst layer 20 side by this H + . it can.
- the first embodiment will be described in detail.
- FIG. 3 is a perspective view showing the structure of the photochemical reaction device according to the first embodiment.
- FIG. 4 is a cross-sectional view showing the structure of the photochemical reaction device according to the first embodiment. In FIG. 3, an ion movement path to be described later is omitted.
- the photochemical reaction device according to the first embodiment is connected to the photochemical reaction cell, the electrolytic cell 31 including the photochemical reaction cell therein, and the electrolytic cell 31 as an ion transfer path. And an electrolytic cell channel 41.
- the photochemical reaction cell is formed in a flat plate shape, and at least the substrate 11 separates the electrolytic cell 31 into two. That is, the electrolytic cell 31 includes an oxidation reaction electrolytic cell 45 in which the photocatalytic reaction cell oxidation catalyst layer 19 is disposed, and a reduction reaction electrolytic cell 46 in which the photochemical reaction cell reduction catalyst layer 20 is disposed. In the oxidation reaction electrolytic tank 45 and the reduction reaction electrolytic tank 46, it is possible to supply separate electrolytic solutions.
- the oxidation reaction electrolytic tank 45 is filled with, for example, a liquid containing H 2 O as an electrolytic solution.
- a liquid containing H 2 O as an electrolytic solution.
- electrolytic solution include those containing an arbitrary electrolyte, but it is desirable to promote an oxidation reaction of H 2 O.
- H 2 O is oxidized by the oxidation catalyst layer 19 to generate O 2 and H + .
- the electrolytic cell for reduction reaction 46 is filled with a liquid containing, for example, CO 2 as an electrolytic solution. It is desirable that the electrolytic solution in the reduction reaction electrolytic tank 46 has a CO 2 absorbent that reduces the reduction potential of CO 2 , has high ionic conductivity, and absorbs CO 2 .
- an electrolytic solution an ionic liquid or an aqueous solution thereof which is composed of a salt of a cation such as imidazolium ion or pyridinium ion and an anion such as BF 4 ⁇ or PF 6 ⁇ and is in a liquid state in a wide temperature range. Can be mentioned.
- examples of the electrolytic solution include amine solutions such as ethanolamine, imidazole, and pyridine, or aqueous solutions thereof.
- the amine may be any of primary amine, secondary amine, tertiary amine, and quaternary amine. Examples of primary amines include methylamine, ethylamine, propylamine, butylamine, pentylamine, and hexylamine.
- the amine hydrocarbon may be substituted with alcohol or halogen. Examples of the substituted amine hydrocarbon include methanolamine, ethanolamine, and chloromethylamine. Moreover, an unsaturated bond may exist. These hydrocarbons are the same for secondary amines and tertiary amines.
- Secondary amines include dimethylamine, diethylamine, dipropylamine, dibutylamine, dipentylamine, dihexylamine, dimethanolamine, diethanolamine, dipropanolamine, and the like.
- the substituted hydrocarbon may be different.
- examples of hydrocarbons that are different include methylethylamine and methylpropylamine.
- Tertiary amines include trimethylamine, triethylamine, tripropylamine, tributylamine, trihexylamine, trimethanolamine, triethanolamine, tripropanolamine, tributanolamine, tripropanolamine, triexanolamine, methyldiethylamine, methyl Such as dipropylamine.
- Examples of the cation of the ionic liquid include 1-ethyl-3-methylimidazolium ion, 1-methyl-3-propylimidazolium ion, 1-butyl-3-methylimidazole ion, 1-methyl-3-pentylimidazolium ion 1-hexyl-3-methylimidazolium ion, and the like.
- the 2-position of the imidazolium ion may be substituted.
- Examples of the pyridinium ion include methylpyridinium, ethylpyridinium, propylpyridinium, butylpyridinium, pentylpyridinium, hexylpyridinium, and the like.
- an alkyl group may be substituted and an unsaturated bond may exist.
- anion examples include fluoride ion, chloride ion, bromide ion, iodide ion, BF 4 ⁇ , PF 6 ⁇ , CF 3 COO ⁇ , CF 3 SO 3 ⁇ , NO 3 ⁇ , SCN ⁇ , (CF 3 SO 2 3 C ⁇ , bis (trifluoromethoxysulfonyl) imide, bis (trifluoromethoxysulfonyl) imide, bis (perfluoroethylsulfonyl) imide and the like.
- the zwitterion which connected the cation and the anion of the ionic liquid with the hydrocarbon may be sufficient.
- CO 2 is reduced by the reduction catalyst layer 20 to generate a carbon compound.
- the temperature of the electrolytic solution filled in the oxidation reaction electrolytic tank 45 and the reduction reaction electrolytic tank 46 may be the same or different depending on the use environment.
- the temperature of the electrolytic solution is higher than the atmospheric temperature.
- the temperature of the electrolytic solution is 30 ° C. or higher and 150 ° C. or lower, more preferably 40 ° C. or higher and 120 ° C. or lower.
- the electrolytic cell channel 41 is provided on the side of the electrolytic cell 31, for example.
- One of the electrolytic cell channels 41 is connected to the oxidation reaction electrolytic cell 45, and the other is connected to the reduction reaction electrolytic cell 46. That is, the electrolytic cell channel 41 connects the oxidation reaction electrolytic cell 45 and the reduction reaction electrolytic cell 46.
- a portion of the electrolytic cell channel 41 is filled with an ion exchange membrane 43, and the ion exchange membrane 43 allows only specific ions to pass therethrough. Thereby, only specific ions are moved through the electrolytic cell channel 41 provided with the ion exchange membrane 43 while separating the electrolytic solution between the electrolytic cell 45 for oxidation reaction and the electrolytic cell 46 for reduction reaction. be able to. That is, the photochemical reaction device has a partition structure through which a substance is selectively passed.
- the ion exchange membrane 43 is a proton exchange membrane, and H + generated in the oxidation reaction electrolytic cell 45 can be moved to the reduction reaction electrolytic cell 46 side. More specifically, examples of the ion exchange membrane 43 include a cation exchange membrane such as Nafion or Flemion, and an anion exchange membrane such as Neoceptor or Selemion.
- an ion that can move and can separate the electrolytic solution for example, agar such as a salt bridge may be used.
- agar such as a salt bridge
- ion transfer performance is good.
- a circulation mechanism 42 such as a pump may be provided in the electrolytic cell channel 41.
- the circulation of ions (H + ) can be improved between the oxidation reaction electrolytic cell 45 and the reduction reaction electrolytic cell 46.
- two electrolytic cell channels 41 may be provided, and the reduction reaction is performed from the oxidation reaction electrolytic cell 45 through one electrolytic cell channel 41 using the circulation mechanism 42 provided in at least one of them.
- the ions may be moved to the electrolytic cell 46, and may be moved from the reduction reaction electrolytic cell 46 to the oxidation reaction electrolytic cell 45 via the other electrolytic cell channel 41.
- a plurality of circulation mechanisms 42 may be provided.
- a plurality (three or more) of electrolytic cell channels 41 may be provided. Further, by transporting the liquid, the generated gas bubbles do not stay on the electrode surface or the electrolytic layer surface, and the efficiency reduction and light quantity distribution due to the scattering of sunlight by the bubbles may be suppressed.
- the moving direction of the liquid is arbitrary.
- a temperature difference is generated in the electrolytic solution by using heat raised by irradiating light on the surface of the multi-junction solar cell 17, thereby reducing ion diffusion and circulating ions more efficiently. Also good. In other words, ion movement can be promoted by convection other than ion diffusion.
- the electrolytic solution used in the reduction reaction electrolytic bath 46 is an amine absorbing solution containing CO 2 discharged from the factory, the temperature of the electrolytic solution is usually higher than room temperature. Thereby, a temperature difference arises with the electrolyte solution of the electrolytic tank 46 for reduction reaction, and the electrolyte solution of the electrolytic tank 45 for oxidation reaction, and the movement of ion can be promoted.
- a temperature adjusting mechanism 44 for adjusting the temperature of the electrolytic solution is provided in the electrolytic cell channel 41 or the electrolytic cell 31, and the solar cell performance and the catalyst performance can be controlled by temperature control.
- the temperature of the reaction system can be made uniform.
- temperature rise can be prevented for system stability.
- Temperature control can change the selectivity of the solar cell and the catalyst, and can also control the product.
- the end of the substrate 11 protrudes from the ends of the multi-junction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20, but the present invention is not limited thereto.
- the substrate 11, the multi-junction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20 may have a flat plate shape having the same area.
- 5 to 8 are cross-sectional views showing the structures of Modifications 1 to 4 in the photochemical reaction device according to the first embodiment.
- differences from the above structure will be mainly described.
- Modification 1 of the photochemical reaction device according to the first embodiment is formed on the substrate 11 as a photochemical reaction cell, an electrolytic cell 31 including the photochemical reaction cell inside, and an ion transfer path. And an opening 51.
- the opening 51 is provided, for example, so as to penetrate the end of the substrate 11 from the oxidation reaction electrolytic cell 45 side to the reduction reaction electrolytic cell 46 side. Thus, the opening 51 connects the oxidation reaction electrolytic cell 45 and the reduction reaction electrolytic cell 46.
- a part of the opening 51 is filled with an ion exchange membrane 43, and the ion exchange membrane 43 allows only specific ions to pass therethrough. Thus, only specific ions can be moved through the opening 51 provided with the ion exchange membrane 43 while separating the electrolytic solution between the oxidation reaction electrolytic tank 45 and the reduction reaction electrolytic tank 46. it can.
- Modification 2 of the photochemical reaction device includes a photochemical reaction cell, an electrolytic cell 31 including the photochemical reaction cell, a substrate 11 as an ion transfer path, and a multi-junction type. And an opening 51 formed in the solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20.
- the opening 51 is provided so as to penetrate, for example, the substrate 11, the multi-junction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20 from the oxidation reaction electrolytic tank 45 side to the reduction reaction electrolytic tank 46 side. Yes. Thus, the opening 51 connects the oxidation reaction electrolytic cell 45 and the reduction reaction electrolytic cell 46.
- a part of the opening 51 is filled with an ion exchange membrane 43, and the ion exchange membrane 43 allows only specific ions to pass therethrough.
- the ion exchange membrane 43 allows only specific ions to pass therethrough.
- only specific ions can be moved through the opening 51 provided with the ion exchange membrane 43 while separating the electrolytic solution between the oxidation reaction electrolytic tank 45 and the reduction reaction electrolytic tank 46. it can.
- the ion exchange membrane 43 is formed in part of the opening 51, but the ion exchange membrane 43 may be formed so as to embed the opening 51.
- the modification 3 in the photochemical reaction device includes a photochemical reaction cell, an electrolytic cell 31 including the photochemical reaction cell inside, a substrate 11 as an ion transfer path, and a multi-junction type. And an opening 51 formed in the solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20.
- the opening 51 is provided so as to penetrate, for example, the substrate 11, the multi-junction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20 from the oxidation reaction electrolytic tank 45 side to the reduction reaction electrolytic tank 46 side. Yes. Thus, the opening 51 connects the oxidation reaction electrolytic cell 45 and the reduction reaction electrolytic cell 46.
- an ion exchange membrane 43 is provided so as to cover the light irradiation surface of the photochemical reaction cell (the surface of the oxidation catalyst layer 19). As a result, the oxidation reaction electrolytic cell 45 side of the opening 51 is covered with the ion exchange membrane 43.
- the ion exchange membrane 43 allows only specific ions to pass through. Thus, only specific ions can be moved through the opening 51 provided with the ion exchange membrane 43 while separating the electrolytic solution between the oxidation reaction electrolytic tank 45 and the reduction reaction electrolytic tank 46. it can.
- the surface of the oxidation catalyst layer 19 is covered with the ion exchange membrane 43.
- the ion exchange membrane 43 functions as the oxidation catalyst layer 19 and further as a protective layer of the multi-junction solar cell 17.
- the ion exchange membrane 43 may have a concavo-convex structure, and a part of the oxidation catalyst layer 19 may be exposed from the concave portion. Thereby, a part of the oxidation catalyst layer 19 can be brought into contact with the oxidation reaction electrolyte solution 31, and the oxidation reaction can be promoted.
- the ion exchange membrane 43 may be provided so as to cover the surface of the reduction catalyst layer 20. That is, it is arbitrary whether the ion exchange membrane 43 is provided on the oxidation catalyst layer 19 or the reduction catalyst layer 20. Further, the ion exchange membrane 43 may be provided on both surfaces of the oxidation catalyst layer 19 and the reduction catalyst layer 20.
- the modification 4 in the photochemical reaction device includes a photochemical reaction cell, an electrolytic cell 31 including the photochemical reaction cell inside, and a multi-junction solar cell 17 as an ion transfer path. And an opening 51 formed in the oxidation catalyst layer 19 and the reduction catalyst layer 20.
- an ion exchange membrane 43 is provided instead of the substrate 11. That is, the multi-junction solar cell 17 and the oxidation catalyst layer 19 are formed on the surface of the ion exchange membrane 43, and the reduction catalyst layer 20 is formed on the back surface.
- the opening 51 is provided so as to penetrate, for example, the multi-junction solar cell 17 and the oxidation catalyst layer 19 from the oxidation reaction electrolytic cell 45 side to the reduction reaction electrolytic cell 46 side, and the reduction catalyst layer 20 is subjected to oxidation reaction electrolysis. It is provided so as to penetrate from the tank 45 side to the reduction reaction electrolytic tank 46 side. Thereby, the ion exchange membrane 43 is provided in the opening 51. In other words, the oxidation reaction electrolytic cell 45 side and the reduction reaction electrolytic cell 46 are separated only by the ion exchange membrane 43.
- the ion exchange membrane 43 allows only specific ions to pass through. Thus, only specific ions can be moved through the opening 51 provided with the ion exchange membrane 43 while separating the electrolytic solution between the oxidation reaction electrolytic tank 45 and the reduction reaction electrolytic tank 46. it can. Also, ions can be moved not only at the opening 51 but also at the end of the protruding ion exchange membrane 43.
- FIGS. 9 to 11 are plan views showing the structure of the photochemical reaction device according to the first embodiment, and mainly showing an example of the planar shape of the opening 51.
- the opening 51 penetrates the substrate 11, the multijunction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20, and the planar shape thereof is formed as a circular through hole 52. Is done.
- a plurality of through holes 52 may be formed.
- the arrangement configuration of the plurality of through holes 52 is, for example, a quadrangular lattice (tetragonal lattice) in the first direction and the second direction orthogonal to the first direction.
- the lower limit of the diameter (equivalent circle diameter) of the through hole 52 is such a size that H + can move, and is preferably 0.3 nm or more.
- the equivalent circle diameter is defined by ((4 ⁇ area) / ⁇ ) 0.5 .
- the planar shape of the through hole 52 is not limited to a circular shape, and may be an elliptical shape, a triangular shape, or a quadrangular shape. Further, the arrangement configuration of the plurality of through holes 52 is not limited to a rectangular lattice shape, but may be a triangular lattice shape or a random lattice shape. Moreover, the through-hole 52 should just have the space
- the diameter of the through hole 52 from the oxidation catalyst layer 19 to the multijunction solar cell 17 may be different from the diameter of the through hole 52 from the reduction catalyst layer 20 to the multijunction solar cell 17. Further, even if burrs and roughness are generated on the side wall of the through hole 52, the effect is not lost.
- the opening 51 penetrates, for example, the substrate 11, the multijunction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20, and the planar shape thereof is a slit 53 having a rectangular shape. It is formed.
- a plurality of slits 53 may be formed.
- the plurality of slits 53 extend in parallel in the first direction and are arranged side by side in the second direction.
- the lower limit of the width (short width) of the slit 53 is such a size that H + can move, and is preferably 0.3 nm or more.
- the opening 51 separates, for example, the substrate 11, the multijunction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20, and has a planar shape as a slit 54. It is formed. That is, a plurality of laminated bodies composed of the substrate 11, the multi-junction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20 are formed, and a slit 54 is formed between the plurality of laminated bodies. In addition, a some laminated body is supported by the flame
- the planar shape of the substrate 11 is not limited to a quadrangle. Depending on the planar shape of the substrate 11, the slit 54 has various planar shapes.
- a structure including the substrate 11, the reflective layer 12, the reduction electrode layer 13, the multijunction solar cell 17, and the oxidation electrode layer 18 is prepared.
- the reflective layer 12, the reduction electrode layer 13, the multi-junction solar cell 17, and the oxidation electrode layer 18 are sequentially formed on the surface of the substrate 11.
- a multijunction solar cell 17 including a first solar cell 14, a second solar cell 15, and a third solar cell 16 using a pin junction semiconductor is used as the solar cell.
- an oxidation catalyst layer 19 is formed on the oxidation electrode layer 18 by, for example, sputtering or coating.
- the oxidation catalyst layer 19 includes, for example, manganese oxide (Mn—O), iridium oxide (Ir—O), nickel oxide (Ni—O), cobalt oxide (Co—O), iron oxide (Fe—O), or ruthenium oxide.
- Binary metal oxides such as (Ru—O), ternary metal oxides such as Ni—Co—O, La—Co—O, Ni—La—O, Sr—Fe—O, Pb—Ru— It is composed of a quaternary metal oxide such as Ir—O or La—Sr—Co—O, or a metal complex such as a Ru complex or an Fe complex.
- the form of the oxidation catalyst layer 19 is not limited to a thin film, but may be a lattice, a particle, or a wire.
- the reduction catalyst layer 20 is formed on the back surface of the substrate 11 by, for example, a vacuum deposition method, a sputtering method, or a coating method.
- the reduction catalyst layer 20 is made of, for example, a metal such as Au, Ag, Cu, Pt, C, Ni, Zn, graphene, CNT, fullerene, ketjen black, or Pd, or an alloy containing at least one of them, or a Ru complex or It is composed of a metal complex such as an Re complex.
- the form of the reduction catalyst layer 20 is not limited to a thin film shape, and may be a lattice shape, a particle shape, or a wire shape.
- a photochemical reaction cell composed of a laminate of the substrate 11, the reflective layer 12, the reduction electrode layer 13, the multijunction solar cell 17, the oxidation electrode layer 18, the oxidation catalyst layer 19, and the reduction catalyst layer 20. It is formed.
- a through hole 52 penetrating from the oxidation catalyst layer 19 to the reduction catalyst layer 20 is formed in the photochemical reaction cell.
- the through hole 52 for example, there is a method of etching after forming a mask pattern. More specifically, after a mask pattern is formed on the oxidation catalyst layer 19 (front surface side) or the reduction catalyst layer 20 (back surface side), the substrate 11, the reflective layer 12, and the reduction electrode layer 13 are formed using this mask pattern. The multi-junction solar cell 17, the oxidation electrode layer 18, the oxidation catalyst layer 19, and the reduction catalyst layer 20 are etched.
- a method for forming a mask pattern a method of forming by general optical lithography or electron beam lithography can be used.
- the method using an imprint the method using the self-organization pattern of a block copolymer or particle
- the etching method include dry etching using a reactive gas such as chlorine gas, or wet etching using an acid solution or an alkali solution.
- direct processing by laser processing, press processing, or cutting processing has an advantage that the number of steps is small and is useful.
- the photochemical reaction device includes an oxidation catalyst layer 19, a reduction catalyst layer 20, and a photochemical reaction cell including a multilayer body of multijunction solar cells 17 formed therebetween. And an ion movement path for moving ions (H + ) between the oxidation catalyst layer 19 and the reduction catalyst layer 20.
- H + generated in the oxidation catalyst layer 19 can be transported to the reduction catalyst layer 20 via the ion transfer path.
- CO 2 reductive decomposition reaction in the reduction catalyst layer 20 can be promoted, and high photoreduction efficiency can be obtained.
- the energy (potential) required for the oxidation of H 2 O in the vicinity of the oxidation catalyst layer 19 and the reduction of CO 2 in the vicinity of the reduction catalyst layer 20 is supplied by the electromotive force generated in the multi-junction solar cell 17.
- an electrode is provided for taking out the photoexcited electrons subjected to charge separation, but a transparent electrode is used for entering light.
- the transparent electrode has high resistance, the efficiency of taking out electricity is reduced.
- a non-transparent metal wiring or the like may be connected to the transparent electrode as an auxiliary electrode.
- the light is blocked by the metal wiring and the amount of incident light is reduced, so that the efficiency is lowered.
- the metal wiring is formed long and thin, and electricity (electrons) is collected through the metal wiring, so that the resistance becomes high.
- the planar oxidation catalyst layer 19 and the reduction catalyst layer 20 are formed on the front and back surfaces of the multi-junction solar cell 17. For this reason, an oxidation-reduction reaction takes place by the catalyst on the spot where the multi-junction solar cell 17 is separated by charge. In other words, charge separation occurs in the multijunction solar cell 17, and a redox reaction occurs in the oxidation catalyst layer 19 and the reduction catalyst layer 20. Thereby, resistance is not increased by metal wiring or the like, and the electromotive force generated by the multi-junction solar cell 17 can be efficiently applied to the oxidation catalyst layer 19 and the reduction catalyst layer 20. In addition, since it is not necessary to form metal wiring or the like, the structure can be simplified.
- the oxidation catalyst layer 19, and the reduction catalyst layer 20 are stacked, an area other than the electrodes is unnecessary. For this reason, even if the size is reduced, the electrode area can be increased, and the reaction is possible at a relatively low current density. As a result, a wide range of options for the catalyst metal can be used, and a general-purpose metal can be used. It is also easy to obtain reaction selectivity.
- FIG. 12 is an experimental result showing the photoreduction efficiency of CO 2 in Example 1 with respect to the comparative example. More specifically, it is obtained by relativizing photoreduction efficiency of CO 2 in the first embodiment in the case of the 1.00 photoreduction efficiency of CO 2 in the comparative example (1-1 to 1-12). Hereinafter, FIG. 12 will be described in more detail.
- Example 1 is an example of a photochemical reaction cell in the photochemical reaction device according to the first embodiment. More specifically, the photochemical reaction cell in Example 1 has a through-hole 52 that can only transport H + and has a relatively large equivalent circle diameter.
- 12 different types of photochemical reaction cells evaluation cell numbers 1-1 to 1-12 in which the equivalent circle diameter of the through hole 52 is 50, 100, 200 ⁇ m and the area ratio is 10, 20, 30, 40% are shown. It was prepared and its photoreduction efficiency of CO 2 was evaluated.
- These photochemical reaction cells in Example 1 were produced as follows.
- a multi-junction solar cell 17 composed of a pin-type a-Si layer, an a-SiGe layer, and an a-SiGe layer, an oxidation electrode layer 18 composed of ITO formed on the surface of the multi-junction solar cell 17,
- the reduction electrode layer 13 made of ZnO formed on the back surface of the multi-junction solar cell 17, the reflective layer 12 made of Ag formed on the back surface of the reduction electrode layer 13, and the back surface of the reflection layer 12.
- a structure having the SUS substrate 11 is prepared.
- the multi-junction solar cell 17 has a thickness of 500 nm
- the oxidation electrode layer 18 has a thickness of 100 nm
- the reduction electrode layer 13 has a thickness of 300 nm
- the reflective layer 12 has a thickness of 200 nm
- the SUS substrate 11 has a thickness. Is 1.5 mm.
- the oxidation catalyst layer 19 is disposed on the p-type surface of the multijunction semiconductor
- the reduction catalyst layer 20 is disposed on the n-type surface.
- an oxidation catalyst layer 19 made of Co 3 O 4 is formed on the surface of the oxidation electrode layer 18 by sputtering. Further, a reduction catalyst layer 20 made of Au is formed on the back surface of the SUS substrate 11 by vacuum deposition.
- the film thickness of the oxidation catalyst layer 19 is 100 nm
- the film thickness of the reduction catalyst layer 20 is 100 nm.
- a laminate including the substrate 11, the reflective layer 12, the reduction electrode layer 13, the multi-junction solar cell 17, the oxidation electrode layer 18, the oxidation catalyst layer 19, and the reduction catalyst layer 20 is formed.
- the laminate is irradiated with light from the surface of the oxidation catalyst layer 19 by a solar simulator (AM1.5, 1000 W / m 2 ), and the open voltage of the cell at that time is measured.
- the open circuit voltage of the cell is set to 1.9 [V].
- a through hole 52 is formed in the cell.
- the through-hole 52 is formed by irradiating the obtained cell with laser light.
- the laser light irradiation conditions are a wavelength of 515 nm, a pulse width of 15 ps, and a repetition frequency of 82 MHz.
- This laser beam is condensed by a 10 ⁇ objective lens and irradiated to the cell.
- a plurality of through holes 52 having a triangular lattice shape are formed in the cell.
- trimming is again performed using laser light so that each through hole 52 has a vertical shape.
- the cell in which the through hole 52 is formed is cut into a square shape, and the edge portion is sealed with an epoxy resin so that the area of the exposed portion becomes 1 cm 2 . Then, after photographing with an optical microscope or a scanning electron microscope at an angle of view where about 100 through-holes 52 are contained, the average equivalent circle diameter and area ratio of the through-holes 52 of each cell are measured by image processing software. Thus, photochemical reaction cells (evaluation cell numbers 1-1 to 1-12) in Example 1 were produced.
- the comparative example is a photochemical reaction cell that does not have the through hole 52, and the structure other than the through hole 52 has the same structure as that of the first embodiment.
- the photoreduction efficiency of CO 2 was measured as follows. First, the cell is immersed in a closed water tank (electrolysis tank 31) containing a 0.1M (mol / l) KHCO 3 solution in which CO 2 gas is bubbled for 10 minutes. Next, light is irradiated for 10 minutes from the oxidation catalyst layer 19 surface side by a solar simulator (AM1.5, 1000 W / m 2 ). Then, the quantitative analysis of the gas in a water tank was performed by gas chromatogram mass spectrometry (GCMS). As a result of the analysis, the detected gas species were O 2 , H 2 , and CO. The generated CO is generated by reduction of CO 2 . The amount of CO generated in the cell in the comparative example was set to 1.00, and the amount of CO obtained in the various cells in Example 1 calculated as a relative value was defined as the photoreduction efficiency of CO 2 .
- GCMS gas chromatogram mass spectrometry
- the area ratio of the through-holes 52 of the cell is preferably 40% or less, more preferably 10% or less.
- the area ratio is not limited to this.
- Example 1 when the through hole 52 has the same area ratio, the larger the equivalent circle diameter of the through hole 52, the higher the CO 2 photoreduction efficiency compared to the comparative example. This is because the structure composed of the through-holes 52 having a larger equivalent circle diameter has a larger processing area (processing area) per unit area and is less affected by processing damage.
- the through hole 52 when the through hole 52 is formed as the ion movement path, by adjusting the equivalent circle diameter and the area ratio of the through hole 52, the CO 2 having a higher CO 2 than the comparative example. Photoreduction efficiency can be obtained.
- the photoreduction efficiency of CO 2 when the through hole 52 is formed as the ion migration path is mainly not only the H + transport efficiency by the through hole 52 but also the multijunction solar cell 17. It is also determined by the amount of light absorbed by. This is because when the through-hole 52 is provided in the photochemical reaction cell, the area of the multi-junction solar cell 17 is reduced, resulting in a decrease in light absorption. As a result, the number of electrons and holes generated by light decreases, and the reaction efficiency of the oxidation-reduction reaction decreases. For this reason, it is required to suppress the loss of light absorption by the multi-junction solar cell 17 caused by the formation of the through hole 52.
- 2nd Embodiment is an example which suppresses the loss of the amount of light absorption accompanying the area reduction of the multijunction type solar cell 17 by adjusting the size, shape, or structure of the through-hole 52.
- the second embodiment will be described in detail below. Note that in the second embodiment, description of the same points as in the first embodiment will be omitted, and different points will be mainly described.
- FIG. 13 is a cross-sectional view showing the structure of the photochemical reaction device according to the second embodiment, and is a cross-sectional view along the line AA shown in FIG.
- the second embodiment is different from the first embodiment in that the size of the through hole 52 is defined. More specifically, the periodic width (pitch) w1 of the through hole 52 is 3 ⁇ m or less, or the equivalent circle diameter (diameter) w2 is 1 ⁇ m or less. That is, the through hole 52 in the second embodiment is formed relatively finely. The basis for this will be described below.
- FIG. 14 is a graph showing the relationship between the periodic width w1 of the through hole 52 and the light absorptance of the multi-junction solar cell 17 in the photochemical reaction device according to the second embodiment.
- FIG. 15 is a graph showing the relationship between the equivalent circle diameter w2 of the through hole 52 and the light absorption rate by the multi-junction solar cell 17 in the photochemical reaction device according to the second embodiment.
- FIG. 14 and FIG. 15 each show a relative value when the amount of sunlight absorbed by the photochemical reaction device (hereinafter referred to as a comparative example) without the through hole 52 is 1. The area ratio of the through hole 52 is calculated as 9, 30, 50, 70%.
- the absorption amount does not decrease as compared with the comparative example, and a high absorption amount can be obtained. This is because incident light is diffracted and scattered in the a-Si layer by the formed through-hole structure. That is, it is considered that incident light enters the a-Si layer due to diffraction and scattering, further increases the optical path length, and increases the amount of light absorbed by the a-Si layer.
- the planar shape of the through hole 52 is not limited to a circular shape, and may be an elliptical shape, a quadrangular shape, or a triangular shape.
- it does not have to be a regular shape and arrangement, and a diffraction effect can be obtained if the structure has fluctuations in period and diameter, and even a random structure can reduce the amount of light absorbed by the light scattering effect. An increase is obtained.
- the substrate 11, the reflective layer 12, the reduction electrode layer 13, the multi-junction solar cell 17, the oxidation electrode layer 18, the oxidation catalyst layer 19, and the reduction catalyst layer 20 are configured.
- a photochemical reaction cell is formed.
- a through hole 52 penetrating from the oxidation catalyst layer 19 to the reduction catalyst layer 20 is formed in the photochemical reaction cell.
- a resist is applied on the oxidation catalyst layer 19 and baked. Thereafter, the resist is irradiated with light or an electron beam by an exposure apparatus or an electron beam drawing apparatus, and then a resist pattern is formed by pre-baking and development processing.
- etching is performed from the oxidation catalyst layer 19 to the reduction catalyst layer 20 by RIE (Reactive Ion Etching) using the resist pattern as a mask. That is, the oxidation catalyst layer 19, the oxidation electrode layer 18, the multi-junction solar cell 17, the reduction electrode layer 13, the reflection layer 12, the substrate 11, and the reduction catalyst layer 20 are etched in order. Thereafter, the resist is removed by an ashing process.
- RIE Reactive Ion Etching
- the substrate 11 can be formed of a material having a large film thickness and difficult to process by dry etching such as RIE. For this reason, it becomes difficult to form the fine through holes 52 in the second embodiment on the substrate 11. From such a manufacturing point of view, as shown in FIG. 16, the through hole 52 may be formed as follows.
- a resist is applied on the oxidation catalyst layer 19 (on the surface) and baked. Thereafter, the resist is irradiated with light or an electron beam by an exposure apparatus or an electron beam drawing apparatus, and then a resist pattern is formed by pre-baking and development processing.
- etching is performed from the oxidation catalyst layer 19 to the reflective layer 12 by RIE, using the resist pattern as a mask. That is, the oxidation catalyst layer 19, the oxidation electrode layer 18, the multijunction solar cell 17, the reduction electrode layer 13, and the reflection layer 12 are sequentially etched from the surface side, and the through hole 52 is formed. At this time, the substrate 11 and the reduction catalyst layer 20 are not etched. Thereafter, the resist is removed by an ashing process.
- a resist is formed on the exposed surfaces of the processed oxidation catalyst layer 19, oxidation electrode layer 18, multi-junction solar cell 17, reduction electrode layer 13, and reflection layer 12 to protect them. Thereafter, a resist is applied on the reduction catalyst layer 20 (on the back surface) and baked. Thereafter, the resist is irradiated with light or an electron beam by an exposure apparatus or an electron beam drawing apparatus, and then a resist pattern is formed by pre-baking and development processing.
- etching is performed from the reduction catalyst layer 20 to the substrate 11 by wet etching using the resist pattern as a mask. That is, the reduction catalyst layer 20 and the substrate 11 are etched in order from the back side.
- the substrate 11 and the reduction catalyst layer 20 are isotropically etched by wet etching. For this reason, as shown in FIG. 16, a through hole 62 having a larger equivalent circle diameter than the through hole 52 is formed in the substrate 11 and the reduction catalyst layer 20.
- the resist on the oxidation catalyst layer 19 the oxidation electrode layer 18, the multijunction solar cell 17, the reduction electrode layer 13, and the reflection layer 12 and the resist on the reduction catalyst layer 20 are subjected to ultrasonic cleaning in an organic solvent. Is removed.
- the through hole 52 is formed in the oxidation catalyst layer 19, the oxidation electrode layer 18, the multi-junction solar cell 17, the reduction electrode layer 13, and the reflection layer 12, and the through hole 62 is formed in the reduction catalyst layer 20 and the substrate 11. Is formed. Then, the photochemical reaction cell in which the through-hole 52 was formed is installed in the electrolytic cell 31, and a photochemical reaction apparatus is formed.
- the periodic width w1 of the through-hole 52 formed in the photochemical reaction cell is 3 ⁇ m or less, and the equivalent circle diameter w2 is 1 ⁇ m or less.
- FIG. 17 is an experimental result showing the photoreduction efficiency of CO 2 in Example 2 with respect to the comparative example. More specifically, it is obtained by relativizing photoreduction efficiency of CO 2 in the second embodiment when made into 1.00 photoreduction efficiency of CO 2 in the comparative example (2-1 to 2-4). Hereinafter, FIG. 17 will be described in more detail.
- Example 2 is an example of a photochemical reaction cell in the photochemical reaction device according to the second embodiment. More specifically, the photochemical reaction cell in Example 2 has a through hole 52 that can only transport H + and has a relatively small equivalent circle diameter.
- evaluation holes evaluation cell numbers 2-1 to 2-4
- the equivalent circle diameter of the through hole 52 being 0.1, 0.5, 1.0, 2.0 ⁇ m and the area ratio being 30% are shown.
- a photochemical reaction cell was prepared and its photoreduction efficiency of CO 2 was evaluated. These photochemical reaction cells in Example 2 were produced as follows.
- a multi-junction solar cell 17 composed of a pin-type a-Si layer, an a-SiGe layer, and an a-SiGe layer, an oxidation electrode layer 18 composed of ITO formed on the surface of the multi-junction solar cell 17,
- the reduction electrode layer 13 made of ZnO formed on the back surface of the multi-junction solar cell 17, the reflective layer 12 made of Ag formed on the back surface of the reduction electrode layer 13, and the back surface of the reflection layer 12.
- a structure having the SUS substrate 11 is prepared.
- the multi-junction solar cell 17 has a thickness of 500 nm
- the oxidation electrode layer 18 has a thickness of 100 nm
- the reduction electrode layer 13 has a thickness of 300 nm
- the reflective layer 12 has a thickness of 200 nm
- the SUS substrate 11 has a thickness.
- an oxidation catalyst layer 19 made of nickel oxide is formed on the surface of the oxidation electrode layer 18 by sputtering. Further, a reduction catalyst layer 20 made of Ag is formed on the back surface of the SUS substrate 11 by vacuum deposition.
- the film thickness of the oxidation catalyst layer 19 was 50 nm, and the film thickness of the reduction catalyst layer 20 was 100 nm.
- a laminate (cell) composed of the substrate 11, the reflective layer 12, the reduction electrode layer 13, the multi-junction solar cell 17, the oxidation electrode layer 18, the oxidation catalyst layer 19, and the reduction catalyst layer 20 is formed.
- the through hole 52 and the through hole 62 are formed in the cell.
- the through hole 52 and the through hole 62 are formed as follows.
- a positive type resist or positive type electron beam resist for i-line exposure is applied on the oxidation catalyst layer 19 (on the surface) by spin coating and baked. Thereafter, the resist is irradiated with light or an electron beam by an exposure apparatus or an electron beam drawing apparatus, and then a resist pattern having a triangular lattice opening pattern is formed by pre-baking and development processing.
- etching is performed from the oxidation catalyst layer 19 to the reflective layer 12 by inductively coupled plasma (ICP) RIE using a chlorine-argon mixed gas, using the resist pattern as a mask. That is, the oxidation catalyst layer 19, the oxidation electrode layer 18, the multijunction solar cell 17, the reduction electrode layer 13, and the reflection layer 12 are sequentially etched from the surface side, and the through hole 52 is formed. At this time, the substrate 11 and the reduction catalyst layer 20 are not etched. Thereafter, the resist is removed by an ashing process.
- ICP inductively coupled plasma
- a resist is formed on the exposed surfaces of the processed oxidation catalyst layer 19, oxidation electrode layer 18, multi-junction solar cell 17, reduction electrode layer 13, and reflection layer 12 to protect them. Thereafter, a positive resist for i-line exposure is applied on the reduction catalyst layer 20 (on the back surface) and baked. Thereafter, the resist is irradiated with light or an electron beam by an exposure apparatus or an electron beam drawing apparatus, and then a resist pattern is formed by pre-baking and development processing.
- etching from the reduction catalyst layer 20 to the substrate 11 is performed by wet etching using an acid, using the resist pattern as a mask. That is, the reduction catalyst layer 20 and the substrate 11 are etched in order from the back side.
- the substrate 11 and the reduction catalyst layer 20 are isotropically etched by wet etching. Therefore, a through hole 62 having a larger equivalent circle diameter than the through hole 52 is formed in the substrate 11 and the reduction catalyst layer 20.
- the equivalent circle diameter of the through hole 62 is 15 ⁇ m, and the area ratio is 10%.
- the arrangement configuration of the plurality of through holes 62 is a triangular lattice shape.
- the resist on the oxidation catalyst layer 19 the oxidation electrode layer 18, the multijunction solar cell 17, the reduction electrode layer 13, and the reflection layer 12 and the resist on the reduction catalyst layer 20 are subjected to ultrasonic cleaning in an organic solvent. Is removed.
- the cell in which the through hole 52 is formed is cut into a square shape, and the edge portion is sealed with an epoxy resin so that the area of the exposed portion becomes 1 cm 2 . Then, after photographing with an optical microscope or a scanning electron microscope at an angle of view where about 100 through holes 52 were accommodated, the average equivalent circle diameter and area ratio of the through holes 52 of each cell were measured by image processing software. Thus, photochemical reaction cells (evaluation cell numbers 2-1 to 2-4) in Example 2 were produced.
- the comparative example is a photochemical reaction cell that does not have the through hole 52 (and the through hole 62), and the structure other than the through hole 52 has the same structure as that of the second embodiment.
- the photoreduction efficiency of CO 2 was measured as follows. First, the cell is immersed in a closed water tank (electrolysis tank 31) containing a 0.1M (mol / l) KHCO 3 solution in which CO 2 gas is bubbled for 10 minutes. Next, light is irradiated for 10 minutes from the oxidation catalyst layer 19 surface side by a solar simulator (AM1.5, 1000 W / m 2 ). Then, the quantitative analysis of the gas in a water tank was performed by gas chromatogram mass spectrometry (GCMS). As a result of the analysis, the detected gas species were O 2 , H 2 , and CO. The generated CO is generated by reduction of CO 2 . The amount of CO generated in the cell in the comparative example was set to 1.00, and the amount of CO obtained in the various cells in Example 2 was calculated as a relative value to be the CO 2 photoreduction efficiency.
- GCMS gas chromatogram mass spectrometry
- Example 2 when the equivalent circle diameter is 0.1, 0.5, and 1.0 ⁇ m, higher photoreduction efficiency of CO 2 can be obtained as compared with the comparative example. This is because the increase in efficiency due to the improvement in H + transport is reflected, and incident light is diffracted and scattered by making the equivalent circle diameter relatively small, and the amount of light absorbed by the multijunction solar cell 17 is increased. . In particular, in the evaluation cell number 2-2 (equivalent circle diameter W2 is 0.5 ⁇ m), higher CO 2 photoreduction efficiency can be obtained. However, when the equivalent circle diameter is 2.0 ⁇ m, the influence of the diffraction effect is reduced, and the obtained effect is lower than that of the comparative example.
- Example 2 in the second embodiment by adjusting the equivalent circle diameter of the through hole 52 to 1 ⁇ m or less, it is possible to obtain a higher CO 2 photoreduction efficiency compared to the comparative example.
- FIG. 18 is an experimental result showing the photoreduction efficiency of CO 2 in Example 3 with respect to the comparative example. More specifically, it is obtained by relativizing photoreduction efficiency of CO 2 in the third embodiment when made into 1.00 photoreduction efficiency of CO 2 in the comparative example (3-1 to 3-2).
- FIG. 19 is a plan view showing the structure of the photochemical reaction device in Example 3.
- FIG. 20 is a cross-sectional view showing the structure of the photochemical reaction device in Example 3.
- FIGS. 18 to 20 will be described in more detail.
- Example 3 is an example of a photochemical reaction cell in the photochemical reaction device according to the second embodiment. More specifically, the photochemical reaction cell in Example 2 has a through hole 52 that can only transport H + and has a relatively small equivalent circle diameter.
- Example 3 in the photochemical reaction device in Example 3, the equivalent circle diameters and arrangement configurations of the plurality of through holes 52 are random. Furthermore, in Example 3, the electrolyte solution in contact with the reduction catalyst layer 20 and the electrolyte solution in contact with the oxidation catalyst layer 19 are different, and light is irradiated from the reduction catalyst layer 20 side to develop a photochemical reaction.
- a multijunction solar cell 17 composed of an InGaP layer (third solar cell 16) having an pn junction, an InGaAs layer (second solar cell 15), and a Ge layer (first solar cell 14), a multijunction solar cell A structure having a reduction electrode layer 13 made of ITO formed on the surface (light incident surface) 17 and an oxidation electrode layer 18 made of Au formed on the back surface of the multi-junction solar cell 17 is prepared.
- the p-type surface of the multi-junction solar cell 17 is disposed on the oxidation electrode layer 18 side, and the n-type surface is disposed on the reduction electrode layer 13 side.
- the detailed structure of the multi-junction solar cell 17 is n-InGaAs (contact layer) / n-AlInP (window layer) / n-InGaP / p-InGaP / p-AlInP (Back-Surface-Field (BSF) layer) / p-AlGaAs (tunnel layer) / p-InGaP (tunnel layer) / n-InGaP (window layer) / n-InGaAs / p-InGaP (BSF layer) / p-GaAs (tunnel layer) / n-GaAs (tunnel layer) ) / N-InGaAs / p-Ge (Substrate).
- BSF Back-Surface-Field
- an oxidation catalyst layer 19 made of nickel oxide is formed on the back surface of the oxidation electrode layer 18 by sputtering. Further, a reduction catalyst layer 20 made of Ag is formed on the surface of the reduction electrode layer 13 by vacuum vapor deposition.
- the film thickness of the oxidation catalyst layer 19 was 50 nm
- the film thickness of the reduction catalyst layer 20 was 15 nm.
- the open voltage was 2.4V.
- the through hole 52 and the through hole 62 are formed in the cell.
- the through hole 52 and the through hole 62 are formed as follows.
- a positive thermosetting resist for i-line exposure is applied on the reduction catalyst layer 20 (on the surface) by spin coating and baked on a hot plate.
- a quartz stamper as a mold is prepared.
- the stamper pattern is produced by transferring the self-assembled pattern of the block copolymer.
- the pattern formed on the stamper has an average equivalent circle diameter of 120 nm (standard deviation of 31 nm), and has an arrangement configuration in which pillars with irregular diameters are irregularly arranged.
- the surface of the stamper is coated with a fluorine-based release agent such as perfluoropolyether, and the release energy is improved by lowering the surface energy of the stamper.
- a stamper is pressed against the resist using a heater plate press at a temperature of 128 ° C. and a pressure of 60 kN. And after returning to room temperature over 1 hour, the mold reversal pattern is formed in the resist by releasing vertically. Thereby, a resist pattern having an opening is created.
- the reduction catalyst layer 20 made of Ag is etched by ion milling, and the reduction-side electrode layer 13 made of ITO is etched by wet etching using oxalic acid. Further, the InGaP layer 16 and the InGaAs layer 15 of the multi-junction solar cell 17 are etched by ICP-RIE using chlorine gas.
- a resist is formed on the exposed surfaces of the processed reduction catalyst layer 20, reduction electrode layer 13, InGaP layer 16, and InGaAs layer 15 to protect them. Thereafter, a positive resist for i-line exposure is applied on the oxidation catalyst layer 19 (on the back surface) and baked. Thereafter, the resist is exposed to light and developed to form an open resist pattern.
- the Ge layer 14 is etched by a wet etching process using an acid.
- through holes 62 are formed in the oxidation catalyst layer 19, the oxidation side electrode layer 18, and the Ge layer 14.
- the equivalent circle diameter of the through hole 62 is 30 ⁇ m, and the area ratio is 15%.
- the arrangement configuration of the through holes 62 is a triangular lattice shape.
- the resist on the reduction catalyst layer 20, the reduction electrode layer 19, the InGaP layer 16, and the InGaAs layer 15 and the resist on the oxidation catalyst layer 19 are removed by ultrasonic cleaning in an organic solvent.
- the ion exchange membrane 43 is filled in the through holes 52 and 62. More specifically, the ion exchange membrane 43 is filled in the through holes 52 and 62 by dipping and drying the Nafion solution.
- the cell in which the through hole 52 is formed is cut into a square shape, and the edge portion is sealed with an epoxy resin so that the area of the exposed portion becomes 1 cm 2 . In this way, a photochemical reaction cell in evaluation cell number 3-1 was produced.
- the photochemical reaction cell in the evaluation cell number 3-2 is a photochemical reaction cell that does not have the ion exchange membrane 43 in the through hole 52 (and the through hole 62). It has the same structure.
- the comparative example is a photochemical reaction cell that does not have the through hole 52 (and the through hole 62) and the ion exchange membrane 43. Except for the through hole 52, Example 3 (Evaluation cell numbers 3-1 and 3) -2).
- FIG. 21 is a cross-sectional view showing an electrolytic cell 31 for measuring the photochemical reaction device in Example 3 and Comparative Example.
- the cells in Example 3 and the comparative example are set at the center of a closed H-type electrolytic layer 31.
- the electrolytic cell 31 has an oxidation reaction electrolytic cell 45 and a reduction reaction electrolytic cell 46, and the widths of these connecting portions are formed small.
- a cell is disposed in the connection portion having the small width.
- the cell oxidation catalyst layer 19 was placed in the oxidation reaction electrolytic bath 45 and the cell reduction catalyst layer 20 was placed in the reduction reaction electrolytic bath 46.
- As the electrolytic solution in the oxidation reaction electrolytic tank 45 a 0.5 mol / L sodium sulfate aqueous solution was used.
- the photoreduction efficiency and gas product of CO 2 were measured as follows. First, light is irradiated for 10 minutes from the reduction catalyst layer 20 surface side by a solar simulator (AM1.5, 1000 W / m 2 ). Then, the quantitative analysis of the gas in each water tank was performed by gas chromatogram mass spectrometry (GCMS). The amount of CO 2 reducing substance generated in the cell in the comparative example was set to 1.00, and the amount of CO obtained in the various cells in Example 3 was calculated as a relative value as the CO 2 photoreduction efficiency. .
- GCMS gas chromatogram mass spectrometry
- the light of CO 2 is sufficiently high compared to the comparative example. Reduction efficiency can be obtained. Furthermore, in Example 3, compared with Example 2, the high photoreduction efficiency of CO 2 can be obtained. This is because when the electrolytic solution in the oxidation reaction electrolytic tank 45 and the electrolytic solution in the reduction reaction electrolytic tank 46 are partitioned by cells, the comparison does not have an H + movement path (through hole 52 and through hole 62). This is because the photoreduction reaction of CO 2 is extremely low in the example.
- FIG. 22 and 23 are cross-sectional views showing the structures of Modification 1 and Modification 2 in the photochemical reaction device according to the second embodiment.
- differences from the above structure will be mainly described.
- the through hole 52 has an equivalent circle diameter w2 that increases from the front surface side (incident surface side) to the back surface side. Formed. That is, the through hole 52 has a tapered shape such that the equivalent circle diameter w2 increases from the oxidation catalyst layer 19 toward the reduction catalyst layer 20. For this reason, the equivalent circle diameter of the through hole 52 on the front surface side of the multi-junction solar cell 17 is larger than the equivalent circle diameter of the through hole 52 on the back surface side.
- the equivalent circle diameter of the through hole 52 on the back surface side of the multi-junction solar cell 17 is preferably about 10 to 90% of the equivalent circle diameter of the through hole 52 on the front surface side.
- the through hole 52 having a tapered shape is formed by adjusting an etching gas during the etching process by ICP-RIE. More specifically, the through-hole 52 having a tapered shape is formed by isotropic etching using a chlorine-argon mixed gas having an increased argon ratio as an etching gas.
- a GI (Graded Index) effect that gives a gradient in the refractive index distribution from the front surface side to the back surface side can be provided.
- produces when light injects can be acquired.
- more light since more light enters the multi-junction solar cell 17, more light can be absorbed.
- the efficiency obtained by the various cells of Example 2 was improved by about 10% to 15% due to the light reflection preventing effect.
- a protective layer 61 is formed on the inner surface of the through hole 52.
- the protective layer 61 is formed on the side surfaces of the substrate 11, the multijunction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20 in the through hole 52.
- the protective layer 61 is composed of a dielectric (insulator) thin film such as SiO 2 , TiO 2 , ZrO 2 , Al 2 O 3 , or HfO 2 , and the film thickness of the protective layer 61 is, for example, about 30 nm. It is.
- the protective layer 61 is formed on the inner surface of the through hole 52 by an ALD (Atomic Layer Deposition) method or a CVD (chemical vapor deposition) method. And formed on the resist. Thereafter, the protective layer 61 and the resist on the resist are removed, so that the protective layer 61 is formed only on the inner surface of the through hole 52.
- ALD Atomic Layer Deposition
- CVD chemical vapor deposition
- the formation of the protective layer 61 is not limited to the ALD method and the CVD method.
- An immersion method in which the cell is immersed in a solution containing metal ions and then heat treatment is also effective.
- the protective layer 61 As a result of measuring the photoreduction efficiency of CO 2 in the same manner as in Example 2, the efficiency obtained by various cells of Example 2 was improved by about 5% to 10% due to leakage prevention.
- a photochemical reaction device will be described with reference to FIGS.
- the third embodiment is an example in which the photochemical reaction cell is applied to tubular (pipe-shaped) piping.
- a compound produced by the oxidation catalyst layer 19 and the reduction catalyst layer 20 can be easily transported, it can be used as chemical energy.
- the third embodiment will be described in detail. Note that in the third embodiment, description of the same points as in the first photochemical reaction device will be omitted, and different points will be mainly described.
- FIG. 24 is a perspective view showing the structure of the photochemical reaction device according to the third embodiment.
- FIG. 25 is a cross-sectional view showing the structure of the photochemical reaction device according to the third embodiment. In FIG. 24, the ion movement path is omitted.
- a pipe 101 is used as the electrolytic cell 31.
- the photochemical reaction device according to the third embodiment includes a photochemical reaction cell, a pipe 101 including (including) a photochemical reaction cell therein, a substrate 11, a multijunction solar cell 17, an oxidation catalyst layer as an ion movement path. 19 and an opening 51 formed in the reduction catalyst layer 20.
- piping means a pipe or pipe system for guiding a fluid.
- the photochemical reaction cell is formed in a cylindrical shape (tubular shape) with the light irradiation surface side (oxidation catalyst layer 19 side) as the outside. That is, the photochemical reaction cell has a tubular structure in which the oxidation catalyst layer 19, the multi-junction solar cell 17, the substrate 11, and the reduction catalyst layer 20 are formed in order from the outside. With this tubular structure, the pipe 101 is separated into two along the flow direction.
- the tubular photochemical reaction cell and the tubular pipe 101 may not have a common central axis. In other words, these cross-sectional shapes may not be concentric. Also, it may be oval, distorted circle, or polygon.
- the pipe 101 includes an outer oxidation reaction electrolytic cell 102 in which the photocatalytic reaction cell oxidation catalyst layer 19 is disposed, and an inner reduction reaction electrolytic cell 103 in which the photochemical reaction cell reduction catalyst layer 20 is disposed. Is provided.
- the oxidation reaction electrolytic cell 102 and the reduction reaction electrolytic cell 103 it is possible to supply separate electrolytic solutions.
- a structure in which the cell structure is reversed (a structure in which the reduction catalyst layer 20, the multijunction solar cell 17, the substrate 11, and the oxidation catalyst layer 19 are sequentially formed from the outside) may be used.
- 102 and the electrolytic cell 103 for reduction reaction are reversed.
- the electrolytic reaction electrolytic cell 102 is filled with, for example, a liquid containing H 2 O as an electrolytic solution.
- H 2 O is oxidized by the oxidation catalyst layer 19 to generate O 2 and H + .
- the electrolytic cell 103 for reduction reaction is filled with a liquid containing, for example, CO 2 as an electrolytic solution.
- CO 2 is reduced by the reduction catalyst layer 20 to generate a carbon compound.
- the opening 51 is provided so as to penetrate, for example, the substrate 11, the multi-junction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20 from the oxidation reaction electrolytic cell 102 side to the reduction reaction electrolytic cell 103 side. Yes. As a result, the opening 51 connects the oxidation reaction electrolytic cell 102 and the reduction reaction electrolytic cell 103.
- a part of the opening 51 is filled with an ion exchange membrane 43, and the ion exchange membrane 43 allows only specific ions to pass therethrough. Thereby, it is possible to move only specific ions through the opening 51 provided with the ion exchange membrane 43 while separating the electrolytic solution between the oxidation reaction electrolytic cell 102 and the reduction reaction electrolytic cell 103. it can.
- the ion exchange membrane 43 is a proton exchange membrane, and H + generated in the oxidation reaction electrolytic cell 102 can be moved to the reduction reaction electrolytic cell 103 side.
- the photochemical reaction device according to the third embodiment is constituted by a pipe 101. Therefore, O 2 generated in the oxidation reaction electrolytic cell 102 and CO generated in the reduction reaction electrolytic cell 103 can be easily transported by flowing along the flow direction of the pipe 101. Thus, at each facility, it is possible to use the product by decomposition of CO 2 as chemical energy.
- FIG. 26 is a perspective view showing a modification of the structure of the photochemical reaction device according to the third embodiment.
- FIG. 27 is a cross-sectional view showing a modification of the structure of the photochemical reaction device according to the third embodiment. In FIG. 22, the ion movement path is omitted.
- a pipe 101 is used as the electrolytic cell 31.
- the photochemical reaction cell provided in the pipe 101 is formed in a flat plate shape. With this flat plate-like structure, the pipe 101 is separated into two along the flow direction. That is, the piping 101 is, for example, an upper-side oxidation reaction electrolytic cell 102 in which the photochemical reaction cell oxidation catalyst layer 19 is arranged, and a lower-side electrolysis reaction electrolysis cell in which the photochemical reaction cell reduction catalyst layer 20 is arranged.
- a tank 103 In the oxidation reaction electrolytic cell 102 and the reduction reaction electrolytic cell 103, it is possible to supply separate electrolytic solutions.
- the electrolytic reaction electrolytic cell 102 is filled with, for example, a liquid containing H 2 O as an electrolytic solution.
- H 2 O is oxidized by the oxidation catalyst layer 19 to generate O 2 and H + .
- the electrolytic cell 103 for reduction reaction is filled with a liquid containing, for example, CO 2 as an electrolytic solution.
- CO 2 is reduced by the reduction catalyst layer 20 to generate a carbon compound.
- the opening 51 is provided so as to penetrate, for example, the substrate 11, the multi-junction solar cell 17, the oxidation catalyst layer 19, and the reduction catalyst layer 20 from the oxidation reaction electrolytic cell 102 side to the reduction reaction electrolytic cell 103 side. Yes. As a result, the opening 51 connects the oxidation reaction electrolytic cell 102 and the reduction reaction electrolytic cell 103.
- a part of the opening 51 is filled with an ion exchange membrane 43, and the ion exchange membrane 43 allows only specific ions to pass therethrough. Thereby, it is possible to move only specific ions through the opening 51 provided with the ion exchange membrane 43 while separating the electrolytic solution between the oxidation reaction electrolytic cell 102 and the reduction reaction electrolytic cell 103. it can.
- the ion exchange membrane 43 is a proton exchange membrane, and H + generated in the oxidation reaction electrolytic cell 102 can be moved to the reduction reaction electrolytic cell 103 side.
- the photochemical reaction cell is applied to a tubular pipe.
- the photochemical reaction cell while decomposing CO 2, it can be easily transported along a compound produced by the oxidation catalyst layer 19 and the reduction catalyst layer 20 in the flow direction through a pipe structure. And the produced
- the generated gas bubbles do not stay on the electrode surface or the electrolytic layer surface. Thereby, the efficiency fall and light quantity distribution resulting from scattering of the sunlight by a bubble can be suppressed.
- FIG. 28 is a plan view showing an application example of the photochemical reaction device according to the third embodiment. More specifically, it is an example in which a photochemical reaction device that is a tubular pipe according to the third embodiment is used as a system.
- the piping structure includes a piping 101 composed of the above-described outer oxidation reaction electrolytic cell 102 and inner reduction reaction electrolytic cell 103, a CO 2 flow path 104 connected thereto, and H 2 O.
- the CO 2 channel 104 is connected to one side of the reduction reaction electrolytic cell 103, and the CO channel 105 is connected to the other side of the reduction reaction electrolytic cell 103.
- the H 2 O channel 106 is connected to one side of the oxidation reaction electrolytic cell 102, and the O 2 channel 107 is connected to the other side of the oxidation reaction electrolytic cell 102. That is, the reduction reaction electrolytic cell 103 and the oxidation reaction electrolytic cell 102 constituting the pipe 101 are branched on one side to become the CO 2 flow path 104 and the H 2 O flow path 106. Further, the reduction reaction electrolytic bath 103 and the oxidation reaction electrolytic bath 102 constituting the pipe 101 are branched on the other side to become a CO flow path 105 and an O 2 flow path 107.
- CO 2 is introduced from the outside.
- CO 2 may be introduced as a gas, or may be introduced as an electrolytic solution containing a CO 2 absorbent.
- CO 2 flow path 104 (an integral), which is the connected to the reduction reaction electrolyzer 103 for, consists of those forming the photochemical reaction cell in tubular, not limited to this, CO 2 and a gas an electrolytic solution containing a CO 2 absorbent may be made in what can flow.
- the H 2 O flow path 106 H 2 O is introduced from the outside.
- H 2 O may be introduced as a gas or a liquid. Since the H 2 O flow path 106 is connected (integrated) with the oxidation reaction electrolytic cell 102, it is configured by the same thing as the tubular pipe 101 having light permeability, but is not limited thereto, and of H 2 O liquid may be made in what can be supplied.
- H 2 O that has flowed from the H 2 O flow path 106 flows into the oxidation reaction electrolytic cell 102. Then, H 2 O is oxidized by the oxidation catalyst layer 19 to generate O 2 and H + .
- CO 2 that has flowed from the CO 2 flow path 104 flows into the electrolytic cell 103 for reduction reaction. Then, CO 2 is reduced by the reduction catalyst layer 20 to generate a carbon compound (CO or the like).
- the CO channel 105 flows out a carbon compound such as CO generated in the reduction reaction electrolytic cell 103 to the outside.
- CO may flow out as a gas or liquid.
- the CO channel 105 is connected to the other of the reduction reaction electrolytic cell 103. For this reason, although it is comprised with what formed the photochemical reaction cell in the shape of a tube, not only this but what should just be comprised with what can flow out CO which is gas and liquid.
- the O 2 flow path 107 flows out O 2 generated in the oxidation reaction electrolytic cell 102 to the outside.
- O 2 may flow out as a gas or may flow out as a liquid.
- the O 2 flow path 107 is connected to the other side of the oxidation reaction electrolytic cell 102. Therefore, composed of the same as the pipe 101 of the tubular having light transmittance, not limited thereto, and may be made of the O 2 gas and liquid in what can flow.
- the reflecting plate 108 may be disposed on the light exit surface side of the pipe 101.
- the reflection plate 108 is, for example, a concave mirror along the tubular pipe 101, and can reflect light and enter the pipe 101 again. Thereby, the improvement of photochemical reaction efficiency can be aimed at.
- the reflection condition can be changed by filling the pipe 101 with a liquid. Thereby, the light can enter the pipe 101 by reflection or refraction at the pipe 101 or the gas-liquid interface, and the photochemical reaction efficiency can be improved.
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Abstract
Description
以下に図1および図2を用いて、本実施形態に係る光化学反応セルについて説明する。
2CO2+4H++4e- → 2CO+2H2O ・・・(2)
(1)式に示すように、酸化触媒層19付近において、H2Oが酸化されて(電子を失い)O2とH+が生成される。そして、酸化触媒層19側で生成されたH+は、後述するイオン移動経路を介して還元触媒層20側に移動する。
以下に図3乃至図23を用いて、本実施形態に係る光化学反応セルを用いた光化学反応装置について説明する。
図3乃至図12を用いて、第1の実施形態に係る光化学反応装置について説明する。
まず、第1の実施形態に係る光化学反応装置の構造について説明する。
次に、第1の実施形態に係る光化学反応装置における変形例について説明する。
次に、第1の実施形態に係る光化学反応装置の製造方法について説明する。ここでは、イオン移動経路となる開口部51として貫通孔52を形成する場合を例に説明する。
上記第1の実施形態によれば、光化学反応装置は、酸化触媒層19、還元触媒層20、およびこれらの間に形成された多接合型太陽電池17の積層体で構成される光化学反応セルと、酸化触媒層19と還元触媒層20との間でイオン(H+)を移動させるイオン移動経路と、を備える。これにより、酸化触媒層19で発生するH+を、イオン移動経路を介して還元触媒層20に輸送することが可能になる。その結果、還元触媒層20におけるCO2の還元分解反応を促進することができ、高い光還元効率を得ることが可能である。
図13乃至図19を用いて、第2の実施形態に係る光化学反応装置について説明する。
まず、第2の実施形態に係る光化学反応装置の構造について説明する。
次に、第2の実施形態に係る光化学反応装置の製造方法について説明する。
上記第2の実施形態によれば、第1の実施形態と同様の効果を得ることができる。
次に、第2の実施形態に係る光化学反応装置における変形例について説明する。
図24乃至図27を用いて、第3の実施形態に係る光化学反応装置について説明する。第3の実施形態は、光化学反応セルを管状(パイプ状)の配管に適用する例である。これにより、CO2を分解しつつ、酸化触媒層19および還元触媒層20で生成された化合物を容易に運搬することができ、化学エネルギーとして利用することができる。以下に、第3の実施形態について詳説する。なお、第3の実施形態において、上記第1の光化学反応装置と同様の点については説明を省略し、主に異なる点について説明する。
まず、第3の実施形態に係る光化学反応装置の構造について説明する。
次に、第3の実施形態に係る光化学反応装置における変形例について説明する。
上記第3の実施形態によれば、第1の実施形態と同様の効果を得ることができる。
次に、第3の実施形態に係る光化学反応装置の適用例について説明する。
Claims (20)
- 水を酸化して酸素とプロトンを生成する酸化触媒層と、二酸化炭素を還元して炭素化合物を生成する還元触媒層と、前記酸化触媒層と前記還元触媒層との間に形成され、光エネルギーにより電荷分離する半導体層と、を有する積層体と、
前記酸化触媒層側と前記還元触媒層側との間でイオンを移動させるイオン移動経路と、
を具備することを特徴とする光化学反応装置。 - 前記積層体を内部に含み、前記積層体によって分離された前記酸化触媒層側に配置される酸化反応用電解槽と前記還元反応用電極側に配置される還元反応用電解槽とを備える電解槽をさらに具備することを特徴とする請求項1に記載の光化学反応装置。
- 前記イオン移動経路は、前記積層体を貫通する開口部であることを特徴とする請求項2に記載の光化学反応装置。
- 前記積層体における前記開口部の面積率は、40%以下であることを特徴とする請求項3に記載の光化学反応装置。
- 前記イオン移動経路は、イオン交換膜を含むことを特徴とする請求項2に記載の光化学反応装置。
- 前記イオン移動経路は、前記電解槽に接続された電解槽流路であることを特徴とする請求項2に記載の光化学反応装置。
- 前記積層体は、前記酸化触媒層、前記還元触媒層、および前記半導体層を支持し、前記酸化反応用電解槽と前記還元反応用電解槽とを分離し、イオン交換膜で構成される基板をさらに有することを特徴とする請求項2に記載の光化学反応装置。
- 前記還元反応用電解槽は、二酸化炭素吸収剤を含むことを特徴とする請求項2に記載の光化学反応装置。
- 前記二酸化炭素吸収剤は、アミン構造またはイオン液体を有することを特徴とする請求項8に記載の光化学反応装置。
- 前記電解槽および前記イオン移動経路においてイオンを循環させる循環機構をさらに具備することを特徴とする請求項2に記載の光化学反応装置。
- 前記炭素化合物は、一酸化炭素、蟻酸、メタノール、および/またはメタンであることを特徴とする請求項1に記載の光化学反応装置。
- 前記半導体層の開放電圧が、前記酸化触媒層で生じる酸化反応の標準酸化還元電位と前記還元触媒層で生じる還元反応の標準酸化還元電位との差よりも大きいことを特徴とする請求項1に記載の光化学反応装置。
- 水を酸化して酸素とプロトンを生成する酸化触媒層と、二酸化炭素を還元して炭素化合物を生成する還元触媒層と、前記酸化触媒層と前記還元触媒層との間に形成され、光エネルギーにより電荷分離する半導体層と、を有する積層体と、
前記酸化触媒層側と前記還元触媒層側との間でイオンを移動させるイオン移動経路と、
前記積層体を内部に含み、前記積層体によって分離された前記酸化触媒層側に配置される酸化反応用電解槽と前記還元反応用電極側に配置される還元反応用電解槽とを備え、管状の配管である電解槽をさらに具備することを特徴とする光化学反応装置。 - 前記積層体は、平板状であることを特徴とする請求項13に記載の光化学反応装置。
- 前記積層体は、前記電解槽に内包され、前記酸化触媒層および前記還元層の一方を外側、他方を内側にした管状であることを特徴とする請求項13に記載の光化学反応装置。
- 水を酸化して酸素とプロトンを生成する酸化触媒層と、二酸化炭素を還元して炭素化合物を生成する還元触媒層と、前記酸化触媒層と前記還元触媒層との間に形成され、光エネルギーにより電荷分離する半導体層と、を有する積層体と、
前記酸化触媒層側と前記還元触媒層側との間でイオンを移動させ、前記積層体を貫通する貫通孔と、
を具備することを特徴とする光化学反応装置。 - 前記貫通孔の円相当径は、1μm以下であることを特徴とする請求項16に記載の光化学反応装置。
- 前記複数の貫通孔の周期幅は、3μm以下であることを特徴とする請求項16に記載の光化学反応装置。
- 前記貫通孔は、光の入射面側からその裏面側に向かって円相当径が小さくなるテーパー形状であることを特徴とする請求項16に記載の光化学反応装置。
- 前記貫通孔の内面上に、誘電体で構成される保護層が形成されることを特徴とする請求項16に記載の光化学反応装置。
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