WO2014077004A1 - 正特性サーミスタおよびその製造方法 - Google Patents
正特性サーミスタおよびその製造方法 Download PDFInfo
- Publication number
- WO2014077004A1 WO2014077004A1 PCT/JP2013/069710 JP2013069710W WO2014077004A1 WO 2014077004 A1 WO2014077004 A1 WO 2014077004A1 JP 2013069710 W JP2013069710 W JP 2013069710W WO 2014077004 A1 WO2014077004 A1 WO 2014077004A1
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- WIPO (PCT)
- Prior art keywords
- ceramic body
- donor element
- ceramic
- conductive paste
- external electrodes
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed as one or more layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/032—Housing; Enclosing; Embedding; Filling the housing or enclosure plural layers surrounding the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
Definitions
- the present invention relates to a positive temperature coefficient thermistor and a manufacturing method thereof, and more particularly to an improvement for improving the moisture resistance of the positive temperature coefficient thermistor.
- FIG. 3 is a sectional view of the positive temperature coefficient thermistor described in Patent Document 1.
- the positive temperature coefficient thermistor 1 is disposed so that the ceramic body 2 having positive thermistor characteristics and the ceramic body 2 face each other through a part of the ceramic body 2.
- the plurality of sets of first and second inner electrodes 3 and 4 arranged on the outer surface of the ceramic body 2 so as to be electrically connected to the first and second inner electrodes 3 and 4, respectively.
- a conductive paste for forming the external electrodes 5 and 6 is prepared.
- the external electrodes 5 and 6 are formed by applying and baking a conductive paste on the outer surface of the sintered ceramic body 2 obtained by firing the raw ceramic body. 1 method and (2) A conductive paste film to be the external electrodes 5 and 6 is formed by applying a conductive paste on the outer surface of the raw ceramic body, and then the raw ceramic body and the conductive paste are formed. A second method of simultaneously firing the film, thereby obtaining a sintered ceramic body 2 in which the first and second external electrodes 5 and 6 are formed on the outer surface; Is described.
- a moisture resistant layer 7 made of glass is formed by applying and baking a glass paste on a region where the external electrodes 5 and 6 are not disposed on the outer surface of the ceramic body 2, as shown in FIG. 3.
- the positive characteristic thermistor 1 is completed.
- a plating process is further performed, and although not shown, for example, a Ni plating film and an Sn plating film may be formed on the external electrodes 5 and 6.
- FIG. 4 is an enlarged view of a portion A in FIG. FIG. 4 shows the end portions of the first external electrode 5 and the moisture-resistant layer 7 on the ceramic body 2.
- the end portion of the second external electrode 6 is not shown in an enlarged manner, but is substantially the same as the end portion of the first external electrode 5 shown in FIG.
- the external electrode 5 and the moisture-resistant layer 7 are in a butted state, and a gap 8 may be formed between the edge of the external electrode 5 and the edge of the moisture-resistant layer 7.
- the gap 8 can be a moisture intrusion path into the ceramic body 2.
- a similar gap may be formed between the edge of the second external electrode 6 and the edge of the moisture-resistant layer 7.
- an object of the present invention is to provide a positive temperature coefficient thermistor having high moisture resistance and a method for manufacturing the same.
- the present invention includes a ceramic body having a positive thermistor characteristic, and first and second internal electrodes disposed so as to face each other through a part of the ceramic body within the ceramic body, First and second external electrodes arranged on the outer surface of the ceramic body to be electrically connected to the first and second inner electrodes, respectively, and an external surface on the outer surface of the ceramic body
- a ceramic element body is in contact with an external electrode and is first directed to a positive temperature coefficient thermistor comprising a moisture resistant layer formed in a region where no electrode is disposed When classified into the layer portion and the remaining portion, the density of the surface layer portion is higher than the density of the remaining portion.
- the ceramic body is made of a barium titanate-based ceramic containing a donor element
- the ratio of the content of the donor element to the content of the titanium element in the ceramic body is the surface layer compared to the balance.
- the part is higher.
- a part of the donor element present in the surface layer portion may be different from the donor element present in the remainder.
- the present invention is characterized in that the conductive paste used for forming the external electrode is higher than the content of the donor element in the ceramic material contained in the raw ceramic body. It includes a ceramic material containing a donor element at a rate.
- the donor element contained in the conductive paste diffuses into the ceramic body based on the difference in content, and suppresses the grain growth of the ceramic in the surface layer portion in contact with the external electrode.
- the surface layer portion is densified.
- a high-density layer is formed by utilizing the diffusion of a donor element from an external electrode during firing, so that a ceramic can be formed without newly providing a special process.
- a high-density layer can be reliably and efficiently formed on the surface layer portion in contact with the external electrode in the element body.
- the positive temperature coefficient thermistor 11 having the above-described characteristic configuration, not only the moisture resistant layer 17 is formed, but also a high density layer is formed on the surface layer portion 18 in contact with the external electrodes 15 and 16 in the ceramic body 12. Therefore, the moisture resistance can be further perfected. Therefore, it is possible to make it difficult for the positive temperature coefficient thermistor 11 to encounter such a disadvantage that the characteristics deteriorate due to moisture intrusion.
- the moisture resistant layer 17 is made of glass or resin
- the wettability with respect to the external electrodes 15 and 16 is poor regardless of whether the glass or resin is used. Since the moisture-resistant layer 17 cannot be formed so as to be covered, the significance of existence of the above-described high-density surface layer portion 18 is further enhanced.
- the donor element contained in the conductive paste applied for forming the external electrodes 15 and 16 is based on the difference in content with the donor element in the raw ceramic body. Ceramic grain growth in the surface layer portion 18 that diffuses into the body 12 and contacts the external electrodes 15 and 16 is suppressed. As a result, the surface layer portion 18 is densified.
- the ceramic body 12 is made of, for example, a barium titanate ceramic, at this stage, as described above, the ratio of the content of the donor element to the content of the titanium element in the ceramic body 12 is larger than that of the remaining portion 19. A state is obtained in which the layer portion 18 is higher.
- the donor element shown in the column of “donor element” in Table 1 was used, and the composition of the ceramic material contained in the raw ceramic body was (Ba) for samples 1 to 3 0.998 Sm 0.002 ) TiO 3 and Samples 4 to 6 were (Ba 0.998 Nd 0.002 ) TiO 3 .
- the internal electrode was formed by printing a conductive paste containing Ni as a conductive component.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Thermistors And Varistors (AREA)
- Manufacturing & Machinery (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
(1)上記生のセラミック素体を焼成して得られた焼結後のセラミック素体2の外表面上に導電性ペーストを塗布し、焼き付けることによって、外部電極5および6を形成する、第1の方法と、
(2)上記生のセラミック素体の外表面上に導電性ペーストを塗布することによって、外部電極5および6となるべき導電性ペースト膜を形成した上で、生のセラミック素体と導電性ペースト膜とを同時に焼成し、それによって、第1および第2の外部電極5および6が外表面上に形成された焼結後のセラミック素体2を得る、第2の方法と、
が記載されている。
ΔR=[{(耐湿試験後の抵抗値)-(初期抵抗値)}/(初期抵抗値)]×100
の式により求めた。その結果が表1の「ΔR」の欄に示されている。
12 セラミック素体
13,14 内部電極
15,16 外部電極
17 耐湿層
18 表面層部分
19 残部
Claims (3)
- 正のサーミスタ特性を有するセラミック素体と、
前記セラミック素体の内部において、当該セラミック素体の一部を介して互いに対向するように配置された第1および第2の内部電極と、
前記セラミック素体の外表面上において、前記第1および第2の内部電極とそれぞれ電気的に接続されるように配置された第1および第2の外部電極と、
前記セラミック素体の外表面上の、前記外部電極が配置されていない領域に形成された耐湿層と、
を備え、
前記セラミック素体を、前記外部電極と接する表面層部分とそれ以外の残部とに分類したとき、前記表面層部分は前記残部より密度が高い、
正特性サーミスタ。 - 前記セラミック素体は、ドナー元素を含有するチタン酸バリウム系セラミックからなり、
前記セラミック素体におけるチタン元素の含有量に対するドナー元素の含有量の比率は、前記残部に比べて前記表面層部分の方が高い、
請求項1に記載の正特性サーミスタ。 - ドナー元素を含有し、焼成後に正のサーミスタ特性を発現するセラミック材料を含む、生のセラミック素体であって、内部に当該生のセラミック素体の一部を介して互いに対向するように第1および第2の内部電極が配置された、生のセラミック素体を用意する工程と、
導電性ペーストを用意する工程と、
前記生のセラミック素体の外表面上に、前記第1および第2の内部電極とそれぞれ電気的に接続される第1および第2の外部電極となるべき導電性ペースト膜を、前記導電性ペーストを用いて形成する工程と、
前記導電性ペースト膜が形成された前記生のセラミック素体を焼成し、それによって、前記第1および第2の外部電極が外表面上に形成された焼結後のセラミック素体を得る工程と、
前記セラミック素体の外表面上の、前記外部電極が配置されていない領域に耐湿層を形成する工程と、
を備え、
前記導電性ペーストは、前記生のセラミック素体に含まれるセラミック材料におけるドナー元素の含有率より高い含有率をもってドナー元素を含有するセラミック材料を含む、
正特性サーミスタの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014546891A JP5943091B2 (ja) | 2012-11-15 | 2013-07-21 | 正特性サーミスタおよびその製造方法 |
CN201380059515.2A CN104813418B (zh) | 2012-11-15 | 2013-07-21 | 正特性热敏电阻及其制造方法 |
KR1020157011408A KR101604576B1 (ko) | 2012-11-15 | 2013-07-21 | 정특성 서미스터 및 그 제조 방법 |
DE112013005441.8T DE112013005441B4 (de) | 2012-11-15 | 2013-07-21 | Thermistor mit positivem Temperaturkoeffizienten und Herstellungsverfahren für denselben |
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JP2012250752 | 2012-11-15 | ||
JP2012-250752 | 2012-11-15 |
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WO2014077004A1 true WO2014077004A1 (ja) | 2014-05-22 |
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JP (1) | JP5943091B2 (ja) |
KR (1) | KR101604576B1 (ja) |
CN (1) | CN104813418B (ja) |
DE (1) | DE112013005441B4 (ja) |
WO (1) | WO2014077004A1 (ja) |
Cited By (1)
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JP2020071923A (ja) * | 2018-10-29 | 2020-05-07 | 株式会社村田製作所 | 電子部品 |
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DE102022121865A1 (de) * | 2022-08-30 | 2024-02-29 | Tdk Electronics Ag | Monolithisches Funktionskeramikelement und Verfahren zur Herstellung einer Kontaktierung für eine Funktionskeramik |
Citations (7)
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JPH053134A (ja) * | 1991-06-24 | 1993-01-08 | Tokin Corp | 積層セラミツクコンデンサの外部電極の製造方法 |
JP2003017356A (ja) * | 2001-06-28 | 2003-01-17 | Kyocera Corp | 積層型電子部品およびその製法 |
JP2004015016A (ja) * | 2002-06-11 | 2004-01-15 | Murata Mfg Co Ltd | チップ型電子部品及びチップ型電子部品の製造方法 |
JP2004128488A (ja) * | 2002-09-10 | 2004-04-22 | Murata Mfg Co Ltd | チップ型電子部品 |
JP2006278557A (ja) * | 2005-03-28 | 2006-10-12 | Tdk Corp | 積層セラミック電子部品 |
JP2007088182A (ja) * | 2005-09-21 | 2007-04-05 | Murata Mfg Co Ltd | セラミック電子部品およびその製造方法 |
JP2012059786A (ja) * | 2010-09-06 | 2012-03-22 | Tdk Corp | セラミック積層ptcサーミスタ |
Family Cites Families (3)
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US7089659B2 (en) | 2001-05-25 | 2006-08-15 | Kyocera Corporation | Method of producing ceramic laminates |
JP3726035B2 (ja) * | 2001-05-25 | 2005-12-14 | 京セラ株式会社 | セラミック積層体の製法 |
TW200903527A (en) | 2007-03-19 | 2009-01-16 | Murata Manufacturing Co | Laminated positive temperature coefficient thermistor |
-
2013
- 2013-07-21 DE DE112013005441.8T patent/DE112013005441B4/de active Active
- 2013-07-21 CN CN201380059515.2A patent/CN104813418B/zh active Active
- 2013-07-21 WO PCT/JP2013/069710 patent/WO2014077004A1/ja active Application Filing
- 2013-07-21 JP JP2014546891A patent/JP5943091B2/ja active Active
- 2013-07-21 KR KR1020157011408A patent/KR101604576B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH053134A (ja) * | 1991-06-24 | 1993-01-08 | Tokin Corp | 積層セラミツクコンデンサの外部電極の製造方法 |
JP2003017356A (ja) * | 2001-06-28 | 2003-01-17 | Kyocera Corp | 積層型電子部品およびその製法 |
JP2004015016A (ja) * | 2002-06-11 | 2004-01-15 | Murata Mfg Co Ltd | チップ型電子部品及びチップ型電子部品の製造方法 |
JP2004128488A (ja) * | 2002-09-10 | 2004-04-22 | Murata Mfg Co Ltd | チップ型電子部品 |
JP2006278557A (ja) * | 2005-03-28 | 2006-10-12 | Tdk Corp | 積層セラミック電子部品 |
JP2007088182A (ja) * | 2005-09-21 | 2007-04-05 | Murata Mfg Co Ltd | セラミック電子部品およびその製造方法 |
JP2012059786A (ja) * | 2010-09-06 | 2012-03-22 | Tdk Corp | セラミック積層ptcサーミスタ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020071923A (ja) * | 2018-10-29 | 2020-05-07 | 株式会社村田製作所 | 電子部品 |
JP7131298B2 (ja) | 2018-10-29 | 2022-09-06 | 株式会社村田製作所 | 電子部品 |
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Publication number | Publication date |
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JP5943091B2 (ja) | 2016-06-29 |
JPWO2014077004A1 (ja) | 2017-01-05 |
DE112013005441T5 (de) | 2015-08-13 |
KR101604576B1 (ko) | 2016-03-17 |
CN104813418B (zh) | 2017-08-25 |
DE112013005441B4 (de) | 2022-01-05 |
CN104813418A (zh) | 2015-07-29 |
KR20150064170A (ko) | 2015-06-10 |
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