WO2014073535A1

WO2014073535A1 - Polarization beam splitter, substrate processing apparatus, device manufacturing system, and device manufacturing method

Info

Publication number: WO2014073535A1
Application number: PCT/JP2013/079911
Authority: WO
Inventors: 加藤　正紀; 哲男鈴木; 剛忠鎌田; 正範荒井; 紘典北
Original assignee: 株式会社ニコン
Priority date: 2012-11-06
Filing date: 2013-11-05
Publication date: 2014-05-15
Also published as: KR20180008893A; CN104885012B; JP6512253B2; TWI683345B; CN107255911A; CN107272095A; CN107272095B; TW201738934A; TW201432785A; TWI627662B; TWI596652B; JP2018025810A; TW201738933A; KR101984451B1; KR20180071428A; HK1245410A1; KR20150083852A; HK1212476A1; KR102045713B1; JP6540027B2

Abstract

The present invention is provided with: a mask holding drum (21) that holds a reflective mask (M); a beam splitter (PBS), which reflects an inputted lighting luminous flux (EL1) toward the mask (M), and which passes through a projection luminous flux (EL2) obtained by having the lighting luminous flux (EL1) reflected by means of the mask (M); a lighting optical module (ILM) that inputs the lighting luminous flux (EL1) to the beam splitter (PBS); and a projection optical module (PLM) that performs projection exposure with respect to a substrate (P) using the projection luminous flux (EL2) that has passed through the beam splitter (PBS). The lighting optical module (ILM) and the beam splitter (PBS) are provided between the mask (M) and the projection optical module (PLM). Furthermore, the beam splitter (PBS) is provided with a first prism, a second prism, and a polarization film, and the polarization film (93) has a silicon dioxide first film body, and a hafnium oxide second film body laminated therein in the film thickness direction.

Description

Polarizing beam splitter, substrate processing apparatus, device manufacturing system, and device manufacturing method

The present invention relates to a polarizing beam splitter, a substrate processing apparatus, a device manufacturing system, and a device manufacturing method.

Conventionally, as a substrate processing apparatus, an exposure apparatus that irradiates a reflective cylindrical reticle (mask) with exposure light and projects the exposure light reflected from the mask onto a photosensitive substrate (wafer) is known (for example, Patent Document 1). The exposure apparatus of Patent Document 1 has a projection optical system that projects exposure light reflected from a mask onto a wafer, and the projection optical system performs exposure in an imaging optical path in accordance with the polarization state of incident exposure light. A polarization beam splitter that transmits and reflects light is included.

JP 2007-227438 A

In the exposure apparatus of Patent Document 1, the illumination light beam from the illumination optical system is irradiated obliquely onto the cylindrical mask from a direction different from the projection optical system, and the exposure light (projection light beam) reflected by the mask is the projection optical system. It is comprised so that it may inject into. When the illumination optical system and the projection optical system are arranged as in Patent Document 1, there is a problem that the use efficiency of the illumination light beam is low, and the image quality of the mask pattern projected onto the photosensitive substrate (wafer) is not preferable. . There is a coaxial epi-illumination system as an illumination form that is efficient and maintains good image quality. This is because light splitting elements such as half mirrors and beam splitters are arranged in the imaging optical path of the projection optical system, and the illumination light flux is irradiated onto the mask via the light splitting element, and the projection light flux reflected by the mask is also light. In this method, the light is guided to the photosensitive substrate through the dividing element.

When separating the illumination light beam directed to the mask and the projected light beam from the mask by the epi-illumination method, an efficient exposure with a low light loss of the illumination light beam and the projected light beam is achieved by using a polarization beam splitter as the light splitting element. Can do.

However, for example, when the illumination beam is reflected (or transmitted) and the projection beam is transmitted (or reflected) by the polarization beam splitter, the polarization beam splitter is shared between the illumination optical system and the projection optical system. There is a possibility that the optical system and the projection optical system physically interfere with each other.

When the polarizing beam splitter is used in the exposure apparatus of Patent Document 1, the polarizing film of the polarizing beam splitter reflects a part of the incident incident light beam as a reflected light beam and transmits a part of the incident light beam as a transmitted light beam. . At this time, the reflected light flux or the transmitted light flux is separated, resulting in energy loss. For this reason, in order to suppress the energy loss of the reflected light beam or transmitted light beam due to the separation, it is preferable that the incident light beam incident on the polarizing film is a laser beam having a uniform wavelength and phase.

However, the laser beam has a high energy density. For this reason, when the incident light beam is laser light, if the reflectance of the reflected light beam and the transmittance of the transmitted light beam in the polarizing film are low, the energy of the laser light is absorbed by the polarizing film, and the load applied to the polarizing film increases. End up. As a result, when light having a high energy density such as laser light is used as the incident light beam, the resistance of the polarizing film of the polarizing beam splitter is likely to be lowered, and thus it may be difficult to appropriately separate the incident light beam. is there.

An aspect of the present invention has been made in view of the above-described problems, and the purpose of the present invention is to physics the illumination optical system and the projection optical system even when the illumination light beam and the projection light beam are separated by the polarization beam splitter. It is an object of the present invention to provide a polarizing beam splitter, a substrate processing apparatus (exposure apparatus), a device manufacturing system, and a device manufacturing method capable of suppressing general interference and easily arranging an illumination optical system and projection optical system.

An aspect of the present invention has been made in view of the above-described problems. The purpose of the present invention is to reduce a load applied to the polarizing film even when the incident light beam has a high energy density, and a part of the incident light beam. It is intended to provide a polarizing beam splitter, a substrate processing apparatus, a device manufacturing system, and a device manufacturing method, in which a reflected light beam is reflected and a part of an incident light beam is transmitted to be a transmitted light beam.

According to the first aspect of the present invention, the mask holding member that holds the reflective mask and the incident illumination light beam are reflected toward the mask, while the illumination light beam is reflected by the mask. A beam splitter that transmits the obtained projection light beam, an illumination optical module that causes the illumination light beam to enter the beam splitter, and a projection optical module that projects the projection light beam transmitted through the beam splitter onto a light-sensitive substrate. An illumination optical system that guides the illumination light beam to the mask includes the illumination optical module and the beam splitter, and a projection optical system that guides the projection light beam to the substrate includes the projection optical module and the beam splitter. The illumination optical module and the beam splitter between the mask and the projection optical module. Provided by which a substrate processing apparatus (exposure apparatus) is provided.

According to a second aspect of the present invention, there is provided a device manufacturing system comprising a substrate processing apparatus according to the first aspect of the present invention and a substrate supply apparatus that supplies the substrate to the substrate processing apparatus.

According to a third aspect of the present invention, the substrate processing apparatus according to the first aspect of the present invention is used to project and expose the substrate, and to process the projected and exposed substrate, thereby Forming a pattern on the substrate.

According to the fourth aspect of the present invention, the mask holding member that holds the reflective mask and the incident illumination light beam are transmitted toward the mask, while the illumination light beam is reflected by the mask. A beam splitter that reflects the resulting projected light beam, an illumination optical module that causes the illumination light beam to enter the beam splitter, and a projection optical module that projects the projected light beam reflected by the beam splitter onto a light-sensitive substrate. An illumination optical system that guides the illumination light beam to the mask includes the illumination optical module and the beam splitter, and a projection optical system that guides the projection light beam to the substrate includes the projection optical module and the beam splitter. The illumination optical module and the beam splitter between the mask and the projection optical module. Provided by which a substrate processing apparatus (exposure apparatus) is provided.

According to the fifth aspect of the present invention, the first prism, the second prism having a surface opposed to one surface of the first prism, and the incident light flux from the first prism toward the second prism, Depending on the polarization state, between the opposing surfaces of the first prism and the second prism to separate into a reflected light beam reflected to the first prism side or a transmitted light beam transmitted to the second prism side. There is provided a polarizing beam splitter comprising: a polarizing film provided in a first film body including silicon dioxide as a main component and a second film body including hafnium oxide as a main component stacked in a film thickness direction.

According to a sixth aspect of the present invention, there is provided a substrate processing apparatus that irradiates a mask with an illumination light beam, and projects and exposes an image of a pattern formed on the mask onto a photosensitive substrate that is a projection target, A mask holding member that holds the reflective mask, an illumination optical module that guides the illumination light beam to the mask, and a projection optical module that projects the projection light beam reflected from the mask onto the projection target (substrate) A polarizing beam splitter according to the first aspect of the present invention, disposed between the illumination optical module and the mask and between the mask and the projection optical module, and a wave plate. The illumination light beam has an incident angle of the polarizing beam splitter with respect to the polarizing film in a predetermined angle range including a Brewster angle of 52.4 ° to 57.3 °; The wave plate polarizes the illumination light beam from the polarization beam splitter so that the light beam splitter reflects the illumination light beam toward the mask and transmits the projection light beam toward the projection optical module. In addition, there is provided a substrate processing apparatus for further polarizing the projection light beam from the mask.

According to a seventh aspect of the present invention, there is provided a device manufacturing system comprising: a substrate processing apparatus according to the sixth aspect of the present invention; and a substrate supply apparatus that supplies the projection target to the substrate processing apparatus. The

According to the eighth aspect of the present invention, projection exposure is performed on the projection object using the substrate processing apparatus according to the sixth aspect of the present invention, and the projection-exposed object is processed. To provide a device manufacturing method including forming a pattern of the mask.

According to the aspect of the present invention, even when the illumination light beam and the projection light beam are separated by the beam splitter used in the illumination optical system and the projection optical system, physical interference between the illumination optical system and the projection optical system. It is possible to provide a polarization beam splitter, a substrate processing apparatus, a device manufacturing system, and a device manufacturing method capable of suppressing the above-described problem and easily arranging the illumination optical system and the projection optical system.

Further, according to the aspect of the present invention, a polarizing beam splitter that reflects a part of an incident light beam as a reflected light beam and transmits a part of the incident light beam as a transmitted light beam while reducing a load applied to the polarizing film, A substrate processing apparatus, a device manufacturing system, and a device manufacturing method can be provided.

FIG. 1 is a diagram illustrating a configuration of a device manufacturing system according to the first embodiment. FIG. 2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. FIG. 3 is a view showing the arrangement of illumination areas and projection areas of the exposure apparatus shown in FIG. FIG. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. FIG. 5A is a diagram illustrating an illumination light beam and a projection light beam in a mask. FIG. 5B is a diagram illustrating the fourth relay lens viewed from the polarization beam splitter. FIG. 6 is a diagram showing an illumination light beam and a projection light beam in the polarization beam splitter. FIG. 7 is a diagram illustrating an arrangement region in which the illumination optical system can be arranged. FIG. 8 is a diagram illustrating a configuration around the polarizing film of the polarizing beam splitter according to the first embodiment. FIG. 9 is a diagram illustrating a configuration around a polarizing film of a polarizing beam splitter of a comparative example with respect to the first embodiment. FIG. 10 is a graph showing transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. FIG. 11 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in FIG. FIG. 12 is a flowchart illustrating the device manufacturing method according to the first embodiment. FIG. 13 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment. FIG. 14 is a view showing the arrangement of an exposure apparatus (substrate processing apparatus) according to the third embodiment. FIG. 15 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment. FIG. 16 is a view showing the arrangement of an exposure apparatus (substrate processing apparatus) according to the fifth embodiment. FIG. 17 is a diagram illustrating a configuration around the polarizing film of the polarizing beam splitter according to the sixth embodiment. FIG. 18 is a graph showing the transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. FIG. 19 is a diagram illustrating a configuration around the polarizing film of the polarizing beam splitter according to the seventh embodiment. FIG. 20 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in FIG. FIG. 21 is a diagram illustrating a configuration around the polarizing film of the polarizing beam splitter according to the eighth embodiment. FIG. 22 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in FIG.

DETAILED DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of the components can be made without departing from the scope of the present invention.

[First Embodiment]
The polarizing beam splitter of the first embodiment is provided in an exposure apparatus as a substrate processing apparatus that performs an exposure process on a photosensitive substrate that is a projection target. The exposure apparatus is incorporated in a device manufacturing system that manufactures devices by performing various processes on the exposed substrate. First, a device manufacturing system will be described.

<Device manufacturing system>
FIG. 1 is a diagram illustrating a configuration of a device manufacturing system according to the first embodiment. A device manufacturing system 1 shown in FIG. 1 is a line (flexible display manufacturing line) for manufacturing a flexible display as a device. Examples of the flexible display include an organic EL display. The device manufacturing system 1 is configured such that the substrate P is sent out from a supply roll FR1 obtained by winding the flexible substrate P in a roll shape, and various processes are continuously performed on the sent out substrate P. In addition, a so-called roll-to-roll method is adopted in which the substrate P after processing is wound as a flexible device on a collecting roll FR2. In the device manufacturing system 1 according to the first embodiment, a substrate P that is a film-like sheet is sent out from the supply roll FR1, and the substrates P sent out from the supply roll FR1 are sequentially supplied to n processing apparatuses U1, U2. , U3, U4, U5,..., Un, and the winding roll FR2 is shown as an example. First, the board | substrate P used as the process target of the device manufacturing system 1 is demonstrated.

For the substrate P, for example, a foil (foil) made of a resin or a metal such as stainless steel or an alloy is used. Examples of the resin film material include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin. Includes one or more.

As the substrate P, for example, it is desirable to select a substrate whose thermal expansion coefficient is not remarkably large so that the amount of deformation caused by heat in various processes applied to the substrate P can be substantially ignored. The thermal expansion coefficient may be set smaller than a threshold corresponding to the process temperature or the like, for example, by mixing an inorganic filler with a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide or the like. The substrate P may be a single layer of ultrathin glass having a thickness of about 100 μm manufactured by a float process or the like, or a laminate in which the above resin film, foil, or the like is bonded to the ultrathin glass. It may be.

The substrate P configured in this way becomes a supply roll FR1 by being wound in a roll shape, and this supply roll FR1 is mounted on the device manufacturing system 1. The device manufacturing system 1 on which the supply roll FR1 is mounted repeatedly executes various processes for manufacturing devices on the substrate P sent out from the supply roll FR1. For this reason, the processed substrate P is in a state where a plurality of devices are connected. That is, the substrate P sent out from the supply roll FR1 is a multi-sided substrate. The substrate P may be activated by modifying the surface in advance by a predetermined pretreatment, or may have a fine partition structure (uneven structure) for precise patterning formed on the surface.

The treated substrate P is recovered as a recovery roll FR2 by being wound into a roll. The collection roll FR2 is attached to a dicing device (not shown). The dicing apparatus to which the collection roll FR2 is mounted divides the processed substrate P for each device (dicing) to form a plurality of devices. Regarding the dimensions of the substrate P, for example, the dimension in the width direction (short direction) is about 10 cm to 2 m, and the dimension in the length direction (long direction) is 10 m or more. In addition, the dimension of the board | substrate P is not limited to an above-described dimension.

Referring to FIG. 1, the device manufacturing system will be described. In FIG. 1, an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal to each other is shown. The X direction is a direction in which the supply roll FR1 and the recovery roll FR2 are connected in a horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is a direction (vertical direction) orthogonal to the X direction and the Y direction.

The device manufacturing system 1 includes a substrate supply device 2 that supplies a substrate P, processing devices U1 to Un that perform various processes on the substrate P supplied by the substrate supply device 2, and processing is performed by the processing devices U1 to Un. The substrate recovery apparatus 4 that recovers the processed substrate P and the host controller 5 that controls each device of the device manufacturing system 1 are provided.

The substrate supply device 2 is rotatably mounted with a supply roll FR1. The substrate supply apparatus 2 includes a driving roller R1 that sends out the substrate P from the mounted supply roll FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller R1 rotates while pinching both front and back surfaces of the substrate P, and feeds the substrate P to the processing apparatuses U1 to Un by feeding the substrate P in the transport direction from the supply roll FR1 to the collection roll FR2. At this time, the edge position controller EPC1 moves the substrate P in the width direction so that the position at the end (edge) in the width direction of the substrate P is within a range of about ± 10 μm to several tens μm with respect to the target position. To correct the position of the substrate P in the width direction.

The substrate collection device 4 is rotatably mounted with a collection roll FR2. The substrate recovery apparatus 4 includes a drive roller R2 that draws the processed substrate P toward the recovery roll FR2, and an edge position controller EPC2 that adjusts the position of the substrate P in the width direction (Y direction). The substrate collection device 4 rotates while sandwiching the front and back surfaces of the substrate P by the driving roller R2, pulls the substrate P in the transport direction, and rotates the collection roll FR2, thereby winding the substrate P. At this time, the edge position controller EPC2 is configured in the same manner as the edge position controller EPC1, and corrects the position in the width direction of the substrate P so that the end portion (edge) in the width direction of the substrate P does not vary in the width direction. .

The processing device U1 is a coating device that applies a photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material, a UV curable resin liquid, or the like is used. The processing apparatus U1 is provided with a coating mechanism Gp1 and a drying mechanism Gp2 in order from the upstream side in the transport direction of the substrate P. The coating mechanism Gp1 includes a pressure drum DR1 around which the substrate P is wound, and a coating roller DR2 facing the pressure drum DR1. The coating mechanism Gp1 sandwiches the substrate P between the pressure drum roller DR1 and the coating roller DR2 in a state where the supplied substrate P is wound around the pressure drum roller DR1. Then, the application mechanism Gp1 applies the photosensitive functional liquid by the application roller DR2 while rotating the impression cylinder DR1 and the application roller DR2 to move the substrate P in the transport direction. The drying mechanism Gp2 blows drying air such as hot air or dry air, removes the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid. A photosensitive functional layer is formed on the substrate P.

The processing device U2 is a heating device that heats the substrate P conveyed from the processing device U1 to a predetermined temperature (for example, about several tens to 120 ° C.) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. It is. The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in order from the upstream side in the transport direction of the substrate P. The heating chamber HA1 is provided with a plurality of rollers and a plurality of air turn bars therein, and the plurality of rollers and the plurality of air turn bars constitute a transport path for the substrate P. The plurality of rollers are provided in rolling contact with the back surface of the substrate P, and the plurality of air turn bars are provided in a non-contact state on the surface side of the substrate P. The plurality of rollers and the plurality of air turn bars are arranged to form a meandering transport path so as to lengthen the transport path of the substrate P. The substrate P passing through the heating chamber HA1 is heated to a predetermined temperature while being transported along a meandering transport path. The cooling chamber HA2 cools the substrate P to the environmental temperature so that the temperature of the substrate P heated in the heating chamber HA1 matches the environmental temperature of the subsequent process (processing apparatus U3). The cooling chamber HA2 is provided with a plurality of rollers, and the plurality of rollers are arranged in a meandering manner in order to lengthen the conveyance path of the substrate P, similarly to the heating chamber HA1. The substrate P passing through the cooling chamber HA2 is cooled while being transferred along a meandering transfer path. A driving roller R3 is provided on the downstream side in the transport direction of the cooling chamber HA2, and the driving roller R3 rotates while sandwiching the substrate P that has passed through the cooling chamber HA2, thereby moving the substrate P toward the processing apparatus U3. Supply.

The processing apparatus (substrate processing apparatus) U3 projects and exposes a pattern such as a circuit for display or wiring on the substrate (photosensitive substrate) P having a photosensitive functional layer formed on the surface supplied from the processing apparatus U2. This is a scanning exposure apparatus. Although the details will be described later, the processing device U3 illuminates the reflective cylindrical mask M with the illumination light beam, and the projection light beam obtained by the illumination light beam being reflected by the mask M can rotate the substrate support drum 25. Projection exposure is performed on the substrate P supported on the outer peripheral surface of the substrate. The processing apparatus U3 includes a driving roller R4 that sends the substrate P supplied from the processing apparatus U2 to the downstream side in the transport direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). The drive roller R4 rotates while pinching both front and back surfaces of the substrate P, and feeds the substrate P toward the exposure position by sending the substrate P downstream in the transport direction. The edge position controller EPC3 is configured in the same manner as the edge position controller EPC1, and corrects the position in the width direction of the substrate P so that the width direction of the substrate P at the exposure position becomes the target position.

Further, the processing apparatus U3 has two sets of drive rollers R5 and R6 that send the substrate P to the downstream side in the transport direction in a state in which the substrate P after the exposure is slackened. The two sets of drive rollers R5 and R6 are arranged at a predetermined interval in the transport direction of the substrate P. The driving roller R5 rotates while sandwiching the upstream side of the substrate P to be transported, and the driving roller R6 rotates while sandwiching the downstream side of the substrate P to be transported, thereby directing the substrate P toward the processing apparatus U4. Supply. At this time, since the substrate P is slack, it is possible to absorb fluctuations in the conveyance speed that occur downstream in the conveyance direction with respect to the driving roller R6, and to eliminate the influence of the exposure process on the substrate P due to fluctuations in the conveyance speed. can do. In addition, in the processing apparatus U3, an alignment microscope that detects an alignment mark or the like formed in advance on the substrate P in order to relatively align (align) a partial image of the mask pattern of the mask M with the substrate P. AM1 and AM2 are provided.

The processing apparatus U4 is a wet processing apparatus that performs wet development processing, electroless plating processing, and the like on the exposed substrate P transferred from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, and BT3 that are hierarchized in the vertical direction (Z direction) and a plurality of rollers that transport the substrate P therein. The plurality of rollers are arranged so as to serve as a conveyance path through which the substrate P sequentially passes through the three processing tanks BT1, BT2, and BT3. A driving roller R7 is provided on the downstream side in the transport direction of the processing tank BT3. The driving roller R7 rotates while sandwiching the substrate P that has passed through the processing tank BT3, so that the substrate P is directed toward the processing apparatus U5. Supply.

Although illustration is abbreviate | omitted, the processing apparatus U5 is a drying apparatus which dries the board | substrate P conveyed from the processing apparatus U4. The processing apparatus U5 adjusts the moisture content adhering to the substrate P wet-processed in the processing apparatus U4 to a predetermined moisture content. The substrate P dried by the processing apparatus U5 is transferred to the processing apparatus Un through several processing apparatuses. Then, after being processed by the processing device Un, the substrate P is wound up on the recovery roll FR2 of the substrate recovery device 4.

The host control device 5 performs overall control of the substrate supply device 2, the substrate recovery device 4, and the plurality of processing devices U1 to Un. The host control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to transport the substrate P from the substrate supply device 2 toward the substrate recovery device 4. In addition, the host controller 5 controls the plurality of processing apparatuses U1 to Un to execute various processes on the substrate P while synchronizing with the transport of the substrate P.

<Exposure device (substrate processing device)>
Next, the configuration of an exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to FIGS. FIG. 2 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. FIG. 3 is a view showing the arrangement of illumination areas and projection areas of the exposure apparatus shown in FIG. FIG. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. FIG. 5A is a diagram illustrating an illumination light beam and a projection light beam in a mask. FIG. 5B is a diagram illustrating the fourth relay lens viewed from the polarization beam splitter. FIG. 6 is a diagram showing an illumination light beam and a projection light beam in the polarization beam splitter. FIG. 7 is a diagram illustrating an arrangement region in which the illumination optical system can be arranged.

The exposure apparatus U3 shown in FIG. 2 is a so-called scanning exposure apparatus, and transfers an image of a mask pattern formed on the outer peripheral surface of the cylindrical mask M while transporting the substrate P in the transport direction (scanning direction). Projection exposure is performed on the surface. 2 and 4 to 7 are orthogonal coordinate systems in which the X direction, the Y direction, and the Z direction are orthogonal to each other, and the same orthogonal coordinate system as that in FIG. 1 is used.

First, the mask M used in the exposure apparatus U3 will be described. The mask M is a reflective cylindrical mask using, for example, a metal cylinder. The mask M is formed in a cylindrical body having an outer peripheral surface (circumferential surface) having a curvature radius Rm with the first axis AX1 extending in the Y direction as the center, and has a constant thickness in the radial direction. The circumferential surface of the mask M is a mask surface P1 on which a predetermined mask pattern is formed. The mask surface P1 includes a high reflection part that reflects the light beam in a predetermined direction with high efficiency, and a reflection suppression part (or light absorption part) that does not reflect the light beam in the predetermined direction or reflects it with low efficiency, and the mask pattern is It is formed by a high reflection portion and a reflection suppression portion. Since such a mask M is a metal cylinder, it can be produced at low cost.

Note that the mask M may be formed with the whole or a part of the panel pattern corresponding to one display device, or may be a multi-surface pattern in which panel patterns corresponding to a plurality of display devices are formed. May be. Further, a plurality of panel patterns may be repeatedly formed in the circumferential direction around the first axis AX1, or a plurality of small panel patterns may be repeatedly formed in a direction parallel to the first axis AX1. May be. Further, the mask M may be formed with a panel pattern for the first display device and a panel pattern for the second display device having a size different from that of the first display device. Moreover, the mask M should just have the circumferential surface used as the curvature radius Rm centering on 1st axis | shaft AX1, and is not limited to the shape of a cylindrical body. For example, the mask M may be an arc-shaped plate having a circumferential surface. The mask M may be a thin plate, or the thin mask M may be curved and attached to a columnar base material or a cylindrical frame so as to have a circumferential surface.

Next, the exposure apparatus U3 shown in FIG. 2 will be described. In addition to the drive rollers R4 to R6, the edge position controller EPC3, and the alignment microscopes AM1 and AM2, the exposure apparatus U3 includes a mask holding mechanism 11, a substrate support mechanism 12, an illumination optical system IL, and a projection optical system PL. And a lower control device 16. The exposure apparatus U3 guides the illumination light beam EL1 emitted from the light source device 13 by the illumination optical system IL and the projection optical system PL, thereby supporting the mask pattern image of the mask M held by the mask holding mechanism 11 on the substrate. Projection is performed on the substrate P supported by the mechanism 12.

The lower-level control device 16 controls each part of the exposure apparatus U3 and causes each part to execute processing. The lower level control device 16 may be a part or all of the higher level control device 5 of the device manufacturing system 1. Further, the lower level control device 16 may be a device controlled by the higher level control device 5 and different from the higher level control device 5. The lower control device 16 includes, for example, a computer.

The mask holding mechanism 11 includes a mask holding drum (mask holding member) 21 that holds the mask M, and a first drive unit 22 that rotates the mask holding drum 21. The mask holding drum 21 holds the mask M so that the first axis AX1 of the mask M is the center of rotation. The first drive unit 22 is connected to the lower control device 16 and rotates the mask holding drum 21 around the first axis AX1.

The mask holding mechanism 11 holds the cylindrical mask M with the mask holding drum 21, but is not limited to this configuration. The mask holding mechanism 11 may wind and hold a thin plate-like mask M following the outer peripheral surface of the mask holding drum 21. The mask holding mechanism 11 may hold the mask M, which is an arcuate plate material, on the outer peripheral surface of the mask holding drum 21.

The substrate support mechanism 12 includes a cylindrical substrate support drum (substrate support member) 25 that supports the substrate P, a second drive unit 26 that rotates the substrate support drum 25, a pair of air turn bars ATB1 and ATB2, and a pair.

Guide rollers

27 and 28. The substrate support drum 25 is formed in a cylindrical shape having an outer peripheral surface (circumferential surface) having a radius of curvature Rfa around the second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and a plane passing through the first axis AX1 and the second axis AX2 is a center plane CL. A part of the circumferential surface of the substrate support drum 25 is a support surface P2 that supports the substrate P. That is, the substrate support drum 25 supports the substrate P by winding the substrate P around the support surface P2. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support drum 25 about the second axis AX2. The pair of air turn bars ATB1 and ATB2 are respectively provided on the upstream side and the downstream side in the transport direction of the substrate P with the substrate support drum 25 interposed therebetween. The pair of air turn bars ATB1 and ATB2 are provided on the surface side of the substrate P, and are disposed below the support surface P2 of the substrate support drum 25 in the vertical direction (Z direction). The pair of

guide rollers

27 and 28 are respectively provided on the upstream side and the downstream side in the transport direction of the substrate P with the pair of air turn bars ATB1 and ATB2 interposed therebetween. The pair of

guide rollers

27, 28 guides the substrate P, one of which is conveyed from the driving roller R4, to the air turn bar ATB1, and the other guide roller 28, which is conveyed from the air turn bar ATB2. P is guided to the driving roller R5.

Therefore, the substrate support mechanism 12 guides the substrate P conveyed from the driving roller R4 to the air turn bar ATB1 by the guide roller 27, and introduces the substrate P that has passed through the air turn bar ATB1 into the substrate support drum 25. The substrate support mechanism 12 rotates the substrate support drum 25 by the second drive unit 26, thereby supporting the substrate P introduced into the substrate support drum 25 on the support surface P2 of the substrate support drum 25, while the air turn bar ATB2. Transport toward The substrate support mechanism 12 guides the substrate P conveyed to the air turn bar ATB2 to the guide roller 28 by the air turn bar ATB2, and guides the substrate P that has passed through the guide roller 28 to the drive roller R5.

At this time, the low-order control device 16 connected to the first drive unit 22 and the second drive unit 26 synchronously rotates the mask holding drum 21 and the substrate support drum 25 at a predetermined rotation speed ratio, thereby The image of the mask pattern formed on the mask surface P1 is continuously and repeatedly projected and exposed on the surface of the substrate P (surface curved along the circumferential surface) wound around the support surface P2 of the substrate support drum 25.

The light source device 13 emits an illumination light beam EL1 that is illuminated by the mask M. The light source device 13 includes a light source 31 and a light guide member 32. The light source 31 is a light source that emits light of a predetermined wavelength that gives a chemical action to the photosensitive layer formed on the surface of the substrate P. As the light source 31, for example, a lamp light source such as a mercury lamp, a laser diode, a light emitting diode (LED), or the like is used. Illumination light emitted from the light source 31 includes, for example, bright ultraviolet rays (g-line, h-line, i-line) emitted from a lamp light source, far-ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm), and ArF excimer laser light. (Wavelength 193 nm). Here, it is preferable that the light source 31 emits an illumination light beam EL1 including a wavelength equal to or shorter than i-line (365 nm wavelength). As the light source 31 that generates the illumination light beam EL1 having a wavelength of i-line or less, a YAG third harmonic laser that emits laser light with a wavelength of 355 nm, a YAG fourth harmonic laser that emits laser light with a wavelength of 266 nm, or A KrF excimer laser or the like that emits laser light having a wavelength of 248 nm can be used.

Here, the illumination light beam EL1 emitted from the light source device 13 is incident on a polarization beam splitter PBS described later. The illumination light beam EL1 is preferably a light beam that reflects almost all of the incident illumination light beam EL1 on the polarization beam splitter PBS in order to suppress energy loss due to separation of the illumination light beam EL1 by the polarization beam splitter PBS. . The polarization beam splitter PBS reflects a light beam that becomes S-polarized linearly polarized light and transmits a light beam that becomes P-polarized linearly polarized light. For this reason, the light source device 13 emits the illumination light beam EL1 in which the illumination light beam EL1 incident on the polarization beam splitter PBS becomes a linearly polarized light (S-polarized light). Therefore, the light source device 13 emits polarized laser light having the same wavelength and phase to the polarization beam splitter PBS.

The light guide member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guide member 32 includes an optical fiber or a relay module using a mirror. When a plurality of illumination optical systems IL are provided, the light guide member 32 separates the illumination light beam EL1 from the light source 31 into a plurality of light beams and guides the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. For example, when the light beam emitted from the light source 31 is polarized laser light, the light guide member 32 uses a polarization maintaining fiber (polarization plane preserving fiber) as the optical fiber, and polarization of the polarized laser light by the polarization maintaining fiber. The light may be guided while maintaining the state.

Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment is an exposure apparatus assuming a so-called multi-lens system. 3 shows a plan view (left view of FIG. 3) of the illumination area IR on the cylindrical mask M held on the mask holding drum 21 as viewed from the −Z side, and the substrate supported by the substrate support drum 25. A plan view (right view of FIG. 3) of the projection area PA on P viewed from the + Z side is shown. 3 indicates the moving direction (rotating direction) of the mask holding drum 21 and the substrate support drum 25. The multi-lens type exposure apparatus U3 illuminates a plurality of (for example, six in the first embodiment) illumination areas IR1 to IR6 on the mask M with the illumination light beam EL1, respectively, and each illumination light beam EL1 corresponds to each illumination area IR1 to IR6. A plurality of projection light beams EL2 obtained by being reflected by the projection are projected and exposed to a plurality of projection areas PA1 to PA6 (for example, six in the first embodiment) on the substrate P.

First, a plurality of illumination areas IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in FIG. 3, the plurality of illumination areas IR1 to IR6 are arranged in two rows in the rotation direction across the center plane CL, and the odd-numbered first illumination areas IR1 on the mask M on the upstream side in the rotation direction, The third illumination region IR3 and the fifth illumination region IR5 are arranged, and the even-numbered second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are arranged on the mask M on the downstream side in the rotation direction. Each illumination region IR1 to IR6 is an elongated trapezoidal (rectangular) region having parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. At this time, each of the trapezoidal illumination areas IR1 to IR6 is an area where the short side is located on the center plane CL side and the long side is located outside. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. In addition, the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are arranged at a predetermined interval in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Similarly, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is disposed between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. The illumination areas IR1 to IR6 are arranged such that the triangular portions of the oblique sides of the adjacent trapezoidal illumination areas IR overlap (overlapping) when viewed from the circumferential direction of the mask M. In the first embodiment, the illumination areas IR1 to IR6 are trapezoidal areas, but may be rectangular areas.

The mask M has a pattern formation area A3 where a mask pattern is formed and a pattern non-formation area A4 where a mask pattern is not formed. The pattern non-formation region A4 is a region that hardly absorbs the illumination light beam EL1, and is arranged so as to surround the pattern formation region A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged so as to cover the entire width in the Y direction of the pattern formation region A3.

A plurality of (for example, six in the first embodiment) illumination optical systems IL are provided according to the plurality of illumination regions IR1 to IR6. The illumination light beam EL1 from the light source device 13 is incident on each of the plurality of illumination optical systems IL1 to IL6. Each illumination optical system IL1 to IL6 guides each illumination light beam EL1 incident from the light source device 13 to each illumination region IR1 to IR6. That is, the first illumination optical system IL1 guides the illumination light beam EL1 to the first illumination region IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 transmit the illumination light beam EL1 to the second to sixth illumination regions IR2. Lead to IR6. The plurality of illumination optical systems IL1 to IL6 are arranged in two rows in the circumferential direction of the mask M across the center plane CL. The plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third, and fifth illumination regions IR1, IR3, and IR5 are arranged (left side in FIG. 2) with the center plane CL interposed therebetween. IL1, third illumination optical system IL3, and fifth illumination optical system IL5 are arranged. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. In addition, the plurality of illumination optical systems IL1 to IL6 has the second illumination on the side where the second, fourth, and sixth illumination regions IR2, IR4, and IR6 are disposed (right side in FIG. 2) with the center plane CL interposed therebetween. An optical system IL2, a fourth illumination optical system IL4, and a sixth illumination optical system IL6 are arranged. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3 is disposed between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction. The fourth illumination optical system IL4 is disposed between the third illumination optical system IL3 and the fifth illumination optical system IL5 in the axial direction. The fifth illumination optical system IL5 is disposed between the fourth illumination optical system IL4 and the sixth illumination optical system IL6 in the axial direction. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5, and the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are from the Y direction. As a result, they are arranged symmetrically about the center plane CL.

Next, the illumination optical systems IL1 to IL6 will be described with reference to FIG. Since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter simply referred to as illumination optical system IL) will be described as an example.

The illumination optical system IL applies the Koehler illumination method so that the illumination light beam EL1 irradiating the illumination region IR (first illumination region IR1) has a uniform illuminance distribution. The illumination optical system IL is an epi-illumination system using a polarization beam splitter PBS. The illumination optical system IL includes an illumination optical module ILM, a polarization beam splitter PBS, and a quarter wavelength plate 41 in order from the incident side of the illumination light beam EL1 from the light source device 13.

As shown in FIG. 4, the illumination optical module ILM includes a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, a cylindrical lens 54, and an illumination field stop 55 in order from the incident side of the illumination light beam EL1. The plurality of relay lenses 56 are provided on the first optical axis BX1. The collimator lens 51 is provided on the emission side of the light guide member 32 of the light source device 13. The optical axis of the collimator lens 51 is disposed on the first optical axis BX1. The collimator lens 51 irradiates the entire incident side surface of the fly-eye lens 52. The fly-eye lens 52 is provided on the emission side of the collimator lens 51. The center of the exit side surface of the fly-eye lens 52 is disposed on the first optical axis BX1. The fly-eye lens 52 divides the illumination light beam EL1 from the collimator lens 51 into light beams that diverge from each of a large number of point light source images. At this time, the exit-side surface of the fly-eye lens 52 on which the point light source image is generated is formed by various lenses from the fly-eye lens 52 through the illumination field stop 55 to the first concave mirror 72 of the projection optical system PL described later. The reflecting surface of the first concave mirror 72 is arranged so as to be optically conjugate with the pupil plane on which it is located.

The condenser lens 53 is provided on the emission side of the fly-eye lens 52. The optical axis of the condenser lens 53 is disposed on the first optical axis BX1. The condenser lens 53 superimposes each of the illumination light beams EL1 divided by the fly-eye lens 52 on the illumination field stop 55 via the cylindrical lens 54. Accordingly, the illumination light beam EL1 has a uniform illuminance distribution on the illumination field stop 55. The cylindrical lens 54 is a plano-convex cylindrical lens in which the incident side is flat and the emission side is convex. The cylindrical lens 54 is provided on the exit side of the condenser lens 53. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1.

The cylindrical lens 54 converges the principal ray of the illumination light beam EL1 in a direction orthogonal to the first optical axis BX1 in the XZ plane in FIG. The cylindrical lens 54 is provided adjacent to the incident side of the illumination field stop 55. The opening of the illumination field stop 55 is formed in a rectangular shape such as a trapezoid or a rectangle having the same shape as the illumination region IR, and the center of the opening of the illumination field stop 55 is on the first optical axis BX1. Be placed. At this time, the illumination field stop 55 is arranged on a surface optically conjugate with the illumination region IR on the mask M by various lenses from the illumination field stop 55 to the mask M. The relay lens 56 is provided on the emission side of the illumination field stop 55. The optical axis of the relay lens 56 is disposed on the first optical axis BX1. The relay lens 56 causes the illumination light beam EL1 from the illumination field stop 55 to enter the polarization beam splitter PBS.

When the illumination light beam EL1 enters the illumination optical module ILM, the illumination light beam EL1 becomes a light beam that irradiates the entire incident-side surface of the fly-eye lens 52 by the collimator lens 51. The illumination light beam EL1 incident on the fly-eye lens 52 becomes the illumination light beam EL1 divided into a number of point light source images, and enters the cylindrical lens 54 via the condenser lens 53. The illumination light beam EL1 incident on the cylindrical lens 54 is converged in the direction orthogonal to the first optical axis BX1 in the XZ plane. The illumination light beam EL 1 that has passed through the cylindrical lens 54 enters the illumination field stop 55. The illumination light beam EL1 incident on the illumination field stop 55 passes through an opening (a trapezoid or a rectangular shape such as a rectangle) of the illumination field stop 55, and enters the polarization beam splitter PBS via the relay lens 56.

The polarization beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL. The polarization beam splitter PBS reflects the illumination light beam EL1 from the illumination optical module ILM and transmits the projection light beam EL2 reflected by the mask M. That is, by making the illumination light beam EL1 from the illumination optical module ILM into S-polarized linearly polarized light, the projected light beam EL2 incident on the polarization beam splitter PBS is converted into P-polarized linearly polarized light by the action of the quarter wavelength plate 41. Is transmitted through the polarization beam splitter PBS.

Although details of the polarization beam splitter PBS will be described later, the polarization beam splitter PBS is provided between the first prism 91, the second prism 92, and the first prism 91 and the second prism 92, as shown in FIG. And a polarizing film (wavefront dividing surface) 93 provided on the surface. The first prism 91 and the second prism 92 are made of quartz glass and are triangular prisms in the XZ plane. The polarizing beam splitter PBS has a quadrangular shape in the XZ plane by joining the triangular first prism 91 and the second prism 92 with the polarizing film 93 interposed therebetween.

The first prism 91 is a prism on the side on which the illumination light beam EL1 and the projection light beam EL2 are incident. The second prism 92 is a prism on the side from which the projection light beam EL 2 that passes through the polarizing film 93 is emitted. The illumination light beam EL 1 traveling from the first prism 91 to the second prism 92 is incident on the polarizing film 93. The polarizing film 93 reflects the S-polarized (linearly polarized) illumination light beam EL1 and transmits the P-polarized (linearly polarized) light beam EL2.

The polarizing beam splitter PBS preferably reflects most of the illumination light beam EL1 reaching the polarizing film (wavefront dividing surface) 93 and transmits most of the projection light beam EL2. The polarization splitting characteristic at the wavefront splitting plane of the polarization beam splitter PBS is expressed by the extinction ratio, but the extinction ratio also changes depending on the incident angle of the light beam toward the wavefront splitting plane. The design is made in consideration of the NA (numerical aperture) of the illumination light beam EL1 and the projection light beam EL2 so that the influence on the imaging performance is not a problem.

The quarter wavelength plate 41 is disposed between the polarization beam splitter PBS and the mask M. The quarter wavelength plate 41 converts the illumination light beam EL1 reflected by the polarization beam splitter PBS from linearly polarized light (S polarized light) to circularly polarized light. The light (circularly polarized light) reflected by the mask M by the irradiation of the circularly polarized illumination light beam EL1 is converted by the quarter wavelength plate 41 into the P-polarized light beam (linearly polarized light beam) EL2.

FIG. 5A exaggerates the behavior of the illumination light beam EL1 applied to the illumination region IR on the mask M and the projection light beam EL2 reflected by the illumination region IR in the XZ plane (plane perpendicular to the first axis AX1). FIG. As shown in FIG. 5A, the illumination optical system IL described above irradiates the illumination area IR of the mask M so that the principal ray of the projection light beam EL2 reflected by the illumination area IR of the mask M is telecentric (parallel system). The chief ray of the illumination light beam EL1 is intentionally made non-telecentric in the XZ plane (plane perpendicular to the first axis AX1) and telecentric in the YZ plane (parallel to the center plane CL). Such a characteristic of the illumination light beam EL1 is given by the cylindrical lens 54 shown in FIG. Specifically, an intersection point Q2 between a line that passes through the central point Q1 in the circumferential direction of the illumination region IR on the mask surface P1 and goes to the first axis AX1 and a circle that is ½ of the radius Rm of the mask surface P1. When set, the curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set so that each principal ray of the illumination light beam EL1 passing through the illumination region IR is directed to the intersection point Q2 on the XZ plane. In this way, each principal ray of the projection light beam EL2 reflected in the illumination region IR is in a state (telecentric) parallel to a straight line passing through the first axis AX1, the point Q1, and the intersection point Q2 in the XZ plane.

Next, a plurality of projection areas PA1 to PA6 that are projected and exposed by the projection optical system PL will be described. As shown in FIG. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in correspondence with the plurality of illumination areas IR1 to IR6 on the mask M. That is, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in two rows in the transport direction across the center plane CL, and the odd-numbered first projection areas PA1 and the first projection areas PA1 on the substrate P on the upstream side in the transport direction are arranged. The third projection area PA3 and the fifth projection area PA5 are arranged, and the even-numbered second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged on the substrate P on the downstream side in the transport direction. Each of the projection areas PA1 to PA6 is an elongated trapezoidal (rectangular) area having a short side and a long side extending in the width direction (Y direction) of the substrate P. At this time, each of the trapezoidal projection areas PA1 to PA6 is an area where the short side is located on the center plane CL side and the long side is located outside. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at predetermined intervals in the width direction. Further, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is arranged between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is arranged between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is disposed between the third projection area PA3 and the fifth projection area PA5. The fifth projection area PA5 is disposed between the fourth projection area PA4 and the sixth projection area PA6. As in the illumination areas IR1 to IR6, the projection areas PA1 to PA6 are overlapped so that the triangular portions of the oblique sides of the adjacent trapezoidal projection areas PA overlap each other when viewed from the transport direction of the substrate P. ) Is arranged. At this time, the projection area PA has such a shape that the exposure amount in the area where the adjacent projection areas PA overlap is substantially the same as the exposure amount in the non-overlapping area. The first to sixth projection areas PA1 to PA6 are arranged so as to cover the entire width in the Y direction of the exposure area A7 exposed on the substrate P.

Here, in FIG. 2, when viewed in the XZ plane, the circumference from the center point of the illumination region IR1 (and IR3, IR5) on the mask M to the center point of the illumination region IR2 (and IR4, IR6) is The circumferential length from the center point of the projection area PA1 (and PA3, PA5) on the substrate P following the support surface P2 to the center point of the projection area PA2 (and PA4, PA6) is set to be substantially equal.

A plurality of projection optical systems PL (for example, six in the first embodiment) are provided according to the plurality of projection areas PA1 to PA6. A plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 are incident on the plurality of projection optical systems PL1 to PL6, respectively. Each projection optical system PL1 to PL6 guides each projection light beam EL2 reflected by the mask M to each projection area PA1 to PA6. That is, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination area IR1 to the first projection area PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 are second to sixth. Each projection light beam EL2 from the illumination regions IR2 to IR6 is guided to the second to sixth projection regions PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are arranged in two rows in the circumferential direction of the mask M across the center plane CL. The plurality of projection optical systems PL1 to PL6 has a first projection optical system on the side (left side in FIG. 2) on which the first, third, and fifth projection areas PA1, PA3, and PA5 are arranged with the center plane CL interposed therebetween. PL1, a third projection optical system PL3, and a fifth projection optical system PL5 are arranged. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. Further, the plurality of projection optical systems PL1 to PL6 has the second projection on the side (the right side in FIG. 2) on which the second, fourth, and sixth projection areas PA2, PA4, and PA6 are arranged with the center plane CL interposed therebetween. An optical system PL2, a fourth projection optical system PL4, and a sixth projection optical system PL6 are arranged. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3 is disposed between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction. The fourth projection optical system PL4 is disposed between the third projection optical system PL3 and the fifth projection optical system PL5. The fifth projection optical system PL5 is disposed between the fourth projection optical system PL4 and the sixth projection optical system PL6. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5, and the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are from the Y direction. As a result, they are arranged symmetrically about the center plane CL.

Again, the projection optical systems PL1 to PL6 will be described with reference to FIG. Since the projection optical systems PL1 to PL6 have the same configuration, the first projection optical system PL1 (hereinafter simply referred to as the projection optical system PL) will be described as an example.

The projection optical system PL projects an image of the mask pattern in the illumination area IR (first illumination area IR1) on the mask M onto the projection area PA on the substrate P. The projection optical system PL includes the quarter-wave plate 41, the polarization beam splitter PBS, and the projection optical module PLM in order from the incident side of the projection light beam EL2 from the mask M.

The quarter-wave plate 41 and the polarization beam splitter PBS are also used as the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share the quarter wavelength plate 41 and the polarization beam splitter PBS.

As described with reference to FIG. 5A, the projection light beam EL2 reflected by the illumination region IR becomes a telecentric light beam (in which the principal rays are parallel to each other) and enters the projection optical system PL. The projection light beam EL2 that is circularly polarized light reflected by the illumination region IR is converted from circularly polarized light to linearly polarized light (P-polarized light) by the quarter wavelength plate 41, and then enters the polarization beam splitter PBS. The projection light beam EL2 incident on the polarization beam splitter PBS passes through the polarization beam splitter PBS and then enters the projection optical module PLM.

The projection optical module PLM is provided corresponding to the illumination optical module ILM. That is, the projection optical module PLM of the first projection optical system PL1 converts the mask pattern image of the first illumination area IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 into the first projection area on the substrate P. Project to PA1. Similarly, the projection optical modules PLM of the second to sixth projection optical systems PL2 to PL6 have second to sixth illumination regions IR2 to IR2 illuminated by the illumination optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image of the IR6 mask pattern is projected onto the second to sixth projection areas PA2 to PA6 on the substrate P.

As shown in FIG. 4, the projection optical module PLM includes a first optical system 61 that forms an image of the mask pattern in the illumination region IR on the intermediate image plane P7, and at least an intermediate image formed by the first optical system 61. A second optical system 62 for re-imaging a part of the image on the projection area PA of the substrate P, and a projection field stop 63 disposed on the intermediate image plane P7 on which the intermediate image is formed are provided. The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism (polarization adjustment means) 68.

The first optical system 61 and the second optical system 62 are, for example, telecentric catadioptric optical systems obtained by modifying a Dyson system. The first optical system 61 has its optical axis (hereinafter referred to as the second optical axis BX2) substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflecting member 70, a first lens group 71, and a first concave mirror 72. The first deflecting member 70 is a triangular prism having a first reflecting surface P3 and a second reflecting surface P4. The first reflecting surface P3 is a surface that reflects the projection light beam EL2 from the polarization beam splitter PBS and causes the reflected projection light beam EL2 to enter the first concave mirror 72 through the first lens group 71. The second reflecting surface P4 is a surface on which the projection light beam EL2 reflected by the first concave mirror 72 enters through the first lens group 71 and reflects the incident projection light beam EL2 toward the projection field stop 63. . The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The first concave mirror 72 is disposed on the pupil plane of the first optical system 61 and is set in an optically conjugate relationship with a number of point light source images generated by the fly-eye lens 52.

The projection light beam EL2 from the polarization beam splitter PBS is reflected by the first reflecting surface P3 of the first deflecting member 70, and enters the first concave mirror 72 through the upper half field region of the first lens group 71. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72, passes through the lower half field of view of the first lens group 71, and enters the second reflective surface P4 of the first deflecting member 70. The projection light beam EL2 incident on the second reflection surface P4 is reflected by the second reflection surface P4, passes through the focus correction optical member 64 and the image shift optical member 65, and enters the projection field stop 63.

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA.

The second optical system 62 has the same configuration as that of the first optical system 61, and is provided symmetrically with the first optical system 61 with the intermediate image plane P7 interposed therebetween. The second optical system 62 has an optical axis (hereinafter referred to as a third optical axis BX3) that is substantially perpendicular to the center plane CL and parallel to the second optical axis BX2. The second optical system 62 includes a second deflecting member 80, a second lens group 81, and a second concave mirror 82. The second deflecting member 80 has a third reflecting surface P5 and a fourth reflecting surface P6. The third reflecting surface P5 is a surface that reflects the projection light beam EL2 from the projection field stop 63 and causes the reflected projection light beam EL2 to enter the second concave mirror 82 through the second lens group 81. The fourth reflecting surface P6 is a surface on which the projection light beam EL2 reflected by the second concave mirror 82 enters through the second lens group 81 and reflects the incident projection light beam EL2 toward the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The second concave mirror 82 is disposed on the pupil plane of the second optical system 62 and is set in an optically conjugate relationship with a number of point light source images formed on the first concave mirror 72.

The projection light beam EL2 from the projection field stop 63 is reflected by the third reflecting surface P5 of the second deflecting member 80, and enters the second concave mirror 82 through the upper half field region of the second lens group 81. The projection light beam EL 2 that has entered the second concave mirror 82 is reflected by the second concave mirror 82, passes through the lower half field of view of the second lens group 81, and enters the fourth reflecting surface P 6 of the second deflecting member 80. The projection light beam EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6, passes through the magnification correction optical member 66, and is projected onto the projection area PA. Thereby, the image of the mask pattern in the illumination area IR is projected to the projection area PA at the same magnification (× 1).

The focus correction optical member 64 is disposed between the first deflection member 70 and the projection field stop 63. The focus correction optical member 64 adjusts the focus state of the mask pattern image projected onto the substrate P. For example, the focus correction optical member 64 is formed by superposing two wedge-shaped prisms in opposite directions (in the opposite direction in the X direction in FIG. 4) so as to form a transparent parallel plate as a whole. By sliding the pair of prisms in the direction of the slope without changing the distance between the faces facing each other, the thickness of the parallel plate is made variable. As a result, the effective optical path length of the first optical system 61 is finely adjusted, and the focus state of the mask pattern image formed on the intermediate image plane P7 and the projection area PA is finely adjusted.

The image shifting optical member 65 is disposed between the first deflecting member 70 and the projection field stop 63. The image shift optical member 65 adjusts the image of the mask pattern projected onto the substrate P so as to be movable in the image plane. The image shifting optical member 65 is composed of a transparent parallel flat glass that can be tilted in the XZ plane of FIG. 4 and a transparent parallel flat glass that can be tilted in the YZ plane of FIG. By adjusting the respective tilt amounts of the two parallel flat glass plates, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

The magnification correcting optical member 66 is disposed between the second deflection member 80 and the substrate P. In the magnification correcting optical member 66, for example, a concave lens, a convex lens, and a concave lens are arranged coaxially at predetermined intervals, the front and rear concave lenses are fixed, and the convex lens between them is moved in the optical axis (principal ray) direction. It is configured. As a result, the mask pattern image formed in the projection area PA is isotropically enlarged or reduced by a small amount while maintaining a telecentric imaging state. The optical axes of the three lens groups constituting the magnification correcting optical member 66 are inclined in the XZ plane so as to be parallel to the principal ray of the projection light beam EL2.

The rotation correction mechanism 67 is a mechanism that slightly rotates the first deflection member 70 around an axis parallel to the Z axis by an actuator (not shown), for example. The rotation correction mechanism 67 can rotate the first deflecting member 70 to slightly rotate the image of the mask pattern formed on the intermediate image plane P7 within the intermediate image plane P7.

The polarization adjustment mechanism 68 adjusts the polarization direction by rotating the quarter-wave plate 41 around an axis orthogonal to the plate surface by an actuator (not shown), for example. The polarization adjusting mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the quarter wavelength plate 41.

In the thus configured projection optical system PL, the projection light beam EL2 from the mask M is emitted from the illumination region IR in the normal direction of the mask surface P1, and passes through the quarter-wave plate 41 and the polarization beam splitter PBS. The light enters the first optical system 61. The projection light beam EL2 incident on the first optical system 61 is reflected by the first reflecting surface (plane mirror) P3 of the first deflecting member 70 of the first optical system 61, passes through the first lens group 71, and is reflected by the first concave mirror 72. Reflected. The projection light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again and is reflected by the second reflecting surface (planar mirror) P4 of the first deflecting member 70, and the focus correction optical member 64 and the image shifter. The light passes through the optical member 65 and enters the projection field stop 63. The projection light beam EL2 that has passed through the projection field stop 63 is reflected by the third reflecting surface (planar mirror) P5 of the second deflecting member 80 of the second optical system 62, and then reflected by the second concave mirror 82 through the second lens group 81. Is done. The projection light beam EL2 reflected by the second concave mirror 82 passes through the second lens group 81 again, is reflected by the fourth reflecting surface (plane mirror) P6 of the second deflecting member 80, and enters the magnification correcting optical member 66. . The projection light beam EL2 emitted from the magnification correcting optical member 66 is incident on the projection area PA on the substrate P, and an image of the mask pattern appearing in the illumination area IR is projected to the projection area PA at the same magnification (× 1). .

In the present embodiment, the second reflecting surface (plane mirror) P4 of the first deflecting member 70 and the third reflecting surface (plane mirror) P5 of the second deflecting member 80 are relative to the center plane CL (or the optical axes BX2, BX3). The first reflecting surface (plane mirror) P3 of the first deflecting member 70 and the fourth reflecting surface (plane mirror) P6 of the second deflecting member 80 are center plane CL (or light). An angle other than 45 ° is set with respect to the axes BX2, BX3). The angle α ° (absolute value) with respect to the center plane CL (or the optical axis BX2) of the first reflecting surface P3 of the first deflecting member 70 is the straight line and center passing through the point Q1, the intersection point Q2, and the first axis AX1 in FIG. When the angle between the surface CL and the surface CL is θ °, the relationship is α ° = 45 ° + θ ° / 2. Similarly, the angle β ° (absolute value) with respect to the center plane CL (or the optical axis BX2) of the fourth reflecting surface P6 of the second deflecting member 80 is within the projection area PA in the circumferential direction of the outer peripheral surface of the substrate support drum 25. When the angle in the ZX plane between the principal ray of the projection light beam EL2 passing through the center point and the center plane CL is ε °, the relationship is β ° = 45 ° + ε ° / 2.

<Configuration of illumination optical system and projection optical system>
Furthermore, with reference to FIGS. 6 and 7 together with FIG. 4, the configuration of the illumination optical system IL and the projection optical system PL of the exposure apparatus U3 of the first embodiment will be described in detail.

As described above, the illumination optical system IL shown in FIG. 4 has the illumination optical module ILM, the projection optical system PL has the projection optical module PLM, and the illumination optical system IL and the projection optical system PL are polarized beams. The splitter PBS and the quarter wave plate 41 are shared. The illumination optical module ILM and the polarization beam splitter PBS are provided between the mask M and the projection optical module PLM in the direction (Z direction) in which the center plane CL extends. Specifically, the polarization beam splitter PBS is provided between the mask M and the first deflection member 70 of the projection optical module PLM in the Z direction, and between the center plane CL and the illumination optical module ILM in the X direction. Provided. The illumination optical module ILM is provided between the mask M and the first lens group 71 of the projection optical module PLM in the Z direction, and is opposite to the center plane CL side with the polarization beam splitter PBS in the X direction. Is provided.

Here, with reference to FIG. 7, the arrangement area E in which the illumination optical module ILM can be arranged will be described. The arrangement area E in the XZ plane is an area partitioned by the first line L1, the second line L2, and the third line L3. The second line L2 is the principal ray of the projection light beam EL2 reflected by the mask M (for example, passing through the point Q1 in FIG. 5A). The first line L1 is a tangent (tangent surface) of the mask surface P1 at an intersection (for example, a point Q1 in FIG. 5A) where the principal ray of the projection light beam EL2 reflected by the mask M and the mask surface P1 intersect. The third line L3 is a line set in parallel with the second optical axis BX2 of the first optical system 61 so as not to spatially interfere with the projection optical module PLM. The illumination optical module ILM is arranged in an arrangement area E surrounded by the first line L1, the second line L2, and the third line L3. When the mask M is a cylinder, as shown in FIG. 7, the first line L1 can be inclined so that the distance between the third line L3 and the first line L1 in the Z direction increases as the distance from the center plane CL increases. Therefore, installation of the illumination optical module ILM is facilitated.

The arrangement of the illumination optical module ILM is also defined by the incident angle β of the chief ray of the illumination light beam EL1 incident on the polarization film 93 of the polarization beam splitter PBS from the illumination optical module ILM. As shown in FIG. 6, an angle formed by the principal ray (for example, passing through the point Q1 in FIG. 5A) of the projection light beam EL2 reflected by the illumination region IR and the center plane CL is defined as θ. At this time, in the illumination optical module ILM, the incident angle β (described as θ1 in the following) of the illumination light beam EL1 incident on the polarizing film 93 of the polarization beam splitter PBS is 45 ° × 0.8 ≦ β It arrange | positions so that it may become in the range of <= (45 degrees + (theta) / 2) * 1.2. That is, the angle range of the incident angle β is such that the illumination light beam EL1 is incident at an incident angle β suitable for the polarizing film 93 of the polarizing beam splitter PBS, but does not physically interfere with the mask M and the projection optical module PLM. The illumination optical module ILM can be disposed. The angle range of the incident angle β is determined in consideration of an angular distribution determined by the numerical aperture (NA) of the illumination light beam EL1, but 45 ° ≦ β ≦ (45 ° + θ / 2) is more preferable. Further, the optimum incident angle β is such that the illumination light beam is applied to the polarizing film 93 of the polarization beam splitter PBS in a state where the first optical axis BX1 of the illumination optical module ILM is parallel to the second optical axis BX2 of the projection optical module PLM. It is an incident angle when EL1 is incident.

The polarizing beam splitter PBS is composed of two triangular prisms (for example, made of quartz) 91 and 92 joined with a polarizing film 93 interposed therebetween. The incident surface of the prism (first prism) 91 that receives the illumination light beam EL1 from the illumination optical module ILM is set perpendicular to the optical axis BX1 of the illumination optical module ILM, and is a surface that emits the illumination light beam EL1 toward the mask M. Is set perpendicular to the principal ray of the projection light beam EL2 (for example, a line connecting the point Q1 in FIG. 5A and the rotation center axis (first axis) AX1). The exit surface of the prism (second prism) 92 that transmits the projection light beam EL2 from the mask M to the projection optical module PLM through the prism 91 and the polarizing film 93 is also the principal ray (for example, FIG. 5A is set perpendicular to a line connecting the point Q1 in 5A and the rotation center axis AX1. Therefore, the polarization beam splitter PBS is an optical parallel plate having a certain thickness with respect to the projection light beam EL2 having a telecentric principal ray.

As shown in FIG. 4, the illumination optical module ILM is likely to physically interfere with the projection optical module PLM on the polarization beam splitter PBS side, and therefore, one of various lenses (first lenses) included in the illumination optical module ILM. The part is notched. In addition, although 1st Embodiment demonstrates the case where a part of various lenses of the illumination optical module ILM are notched, it is not restricted to this structure. That is, since the projection optical module PLM also easily physically interferes with the illumination optical module ILM on the polarization beam splitter PBS side, some of the various lenses (second lenses) included in the projection optical module PLM are cut out. Also good. Accordingly, some of the various lenses included in both the illumination optical module ILM and the projection optical module PLM may be cut out. However, in general, the illumination optical module ILM requires lower optical accuracy than the projection optical module PLM, and therefore it is simple and preferable to cut out some of the various lenses of the illumination optical module ILM.

The illumination optical module ILM has a part of a plurality of relay lenses 56 provided on the polarization beam splitter PBS side. The plurality of relay lenses 56 are, in order from the incident side of the illumination light beam EL1, a first relay lens 56a, a second relay lens 56b, a third relay lens 56c, and a fourth relay lens 56d. The fourth relay lens 56d is provided adjacent to the polarization beam splitter PBS. The third relay lens 56c is provided adjacent to the fourth relay lens 56d. The second relay lens 56b is provided at a predetermined interval from the third relay lens 56c, and the second relay lens 56b and the first relay lens are provided between the second relay lens 56b and the third relay lens 56c. It is longer than 56a. The first relay lens 56a is provided adjacent to the second relay lens 56b. The first relay lens 56a and the second relay lens 56b on the side far from the polarization beam splitter PBS are formed in a circle around the optical axis. On the other hand, the third relay lens 56c and the fourth relay lens 56d on the side close to the polarization beam splitter PBS have a shape in which a part of a circle is cut out.

When the illumination light beam EL1 enters the third relay lens 56c and the fourth relay lens 56d, the incident region S2 where the illumination light beam EL1 enters and the illumination light beam EL1 do not enter the third relay lens 56c and the fourth relay lens 56d. A non-incident region S1 is formed. The third relay lens 56c and the fourth relay lens 56d are formed in a shape in which a part of a circular shape is cut out by forming a part of the non-incident region S1. Specifically, the third relay lens 56c and the fourth relay lens 56d have a shape in which both sides in the orthogonal direction orthogonal to the first optical axis BX1 are cut by surfaces perpendicular to the orthogonal direction in the XZ plane. Therefore, when viewed from above the first optical axis BX1, the third relay lens 56c and the fourth relay lens 56d have a shape including a substantially elliptical shape, a substantially oval shape, a substantially oval shape, and the like.

Here, an example of the outer shape of the fourth relay lens 56d closest to the polarization beam splitter PBS in FIG. 4 will be described with reference to FIG. 5B. FIG. 5B is a view of the fourth relay lens 56d from the polarization beam splitter PBS side. A non-incident region S1 where the illumination light beam EL1 does not pass vertically in the Z direction is sandwiched between the incident region S2 through which the illumination light beam EL1 passes. Exists. The fourth relay lens 56d is manufactured by cutting a portion corresponding to the non-incident region S1 after being manufactured as a circular lens having a predetermined diameter.

The diameter of the circular lens depends on the size of the illumination area IR on the mask M, the working distance, the numerical aperture (NA) of the illumination light beam EL1, and the degree of non-telecentricity of the chief ray of the illumination light beam EL1 described in FIG. 5A. Can be decided. In FIG. 5B, attention is paid to the four corners of the illumination region IR set on the mask M (here, a rectangle having a long side in the Y direction around the point Q1 through which the optical axis BX1 passes). Assuming that one of the four corners is FFa, the point FFa in the illumination region IR is irradiated with a substantially circular partial illumination light beam EL1a out of the illumination light beam EL1 passing through the fourth relay lens 56d. The size of the circular distribution of the partial illumination light beam EL1a on the fourth relay lens 56d is determined by the working distance (focal length) and the numerical aperture (NA) of the illumination light beam EL1.

Further, as described with reference to FIG. 5A, each principal ray of the illumination light beam EL1 on the mask M is in a non-telecentric state in the XZ plane, and thus the principal illumination light beam EL1a passing through the point FFa on the mask M The light beam is shifted by a certain amount in the Z direction on the fourth relay lens 56d. As described above, an incident region on the fourth relay lens 56d is obtained by superimposing all the distributions on the fourth relay lens 56d of the partial illumination light beam that irradiates each of the four corners (and on the outer edge) of the illumination region IR. The illumination light beam EL1 distributed in S2. Accordingly, the distribution (spreading) of the illumination light beam EL1 on the fourth relay lens 56d is obtained in consideration of the non-telecentric state in the XZ plane of the illumination light beam EL1, and the incident region S2 (distribution region of the illumination light beam EL1). What is necessary is just to determine the shape and dimension of the 4th relay lens 56d so that it may become the magnitude | size which covers this.

Similar to the fourth relay lens 56d, the other lens 56c in FIG. 4 or the

lenses

56a and 56b are also sized so as to cover the distribution area of the substantial illumination light beam EL1 in consideration of the distribution area. The outer shape and dimensions of the lens can be determined.

In general, a high-precision lens having power (refractive power) is made by polishing the surface of a circular glass material such as optical glass or quartz. From the beginning, for example, an incident region S2 determined as shown in FIG. 5B. An approximately oval, approximately oval, approximately oval, or approximately rectangular glass material having a size corresponding to 1 may be prepared, and the surface thereof may be polished to form a desired lens surface. In that case, a step of cutting a portion corresponding to the non-incident region S1 becomes unnecessary.

<Polarized beam splitter>
Next, the configuration of the polarization beam splitter PBS provided in the exposure apparatus U3 of the first embodiment will be described with reference to FIGS. 6 and 8 to 11. FIG. FIG. 8 is a diagram illustrating a configuration around the polarizing film of the polarizing beam splitter according to the first embodiment. FIG. 9 is a diagram illustrating a configuration around a polarizing film of a polarizing beam splitter of a comparative example with respect to the first embodiment. FIG. 10 is a graph showing transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. FIG. 11 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in FIG.

As shown in FIG. 6, the polarizing beam splitter PBS includes a first prism 91, a second prism 92, and a polarizing film 93 provided between the first prism 91 and the second prism 92. The first prism 91 and the second prism 92 are made of quartz glass and are triangular prisms having different triangular shapes in the XZ plane. The polarizing beam splitter PBS has a quadrangular shape in the XZ plane by joining the triangular first prism 91 and the second prism 92 with the polarizing film 93 interposed therebetween.

The first prism 91 is a prism on the side on which the illumination light beam EL1 and the projection light beam EL2 are incident. The first prism 91 has a first surface D1 on which the illumination light beam EL1 from the illumination optical module ILM is incident, and a second surface D2 on which the projection light beam EL2 from the mask M is incident. The first surface D1 is a surface perpendicular to the chief ray of the illumination light beam EL1. The second surface D2 is a surface perpendicular to the principal ray of the projection light beam EL2.

The second prism 92 is a prism on the side from which the projection light beam EL2 transmitted through the polarizing film 93 is emitted. The second prism 92 has a third surface D3 that faces the first surface D1 of the first prism 91, and a fourth surface D4 that faces the second surface D2 of the first prism 91. The fourth surface D4 is a surface on which the projection light beam EL2 incident on the first prism 91 is transmitted through the polarizing film 93 and is emitted, and is a surface perpendicular to the principal light beam of the projection light beam EL2 to be emitted. At this time, the first surface D1 is non-parallel to the opposing third surface D3, while the second surface D2 is parallel to the opposing fourth surface D4.

The illumination light beam EL 1 traveling from the first prism 91 to the second prism 92 is incident on the polarizing film 93. The polarizing film 93 reflects the S-polarized (linearly polarized) illumination light beam EL1 and transmits the P-polarized (linearly polarized) light beam EL2. The polarizing film 93 is formed by laminating a film body whose main component is silicon dioxide (SiO ₂ ) and a film body whose main component is hafnium oxide (HfO ₂ ) in the film thickness direction. Hafnium oxide is a material that absorbs as little light as quartz, and hardly changes due to the absorption of light. The polarizing film 93 is a film having a predetermined Brewster angle θB. Here, the Brewster angle θB is an angle at which the reflectance of P-polarized light becomes zero.

The Brewster angle θB is calculated from the following equation. Note that nh is the refractive index of hafnium oxide, nL is the refractive index of silicon dioxide, and ns is the refractive index of the prism (quartz glass).
θB = arcsin ([(nh ² × nL ² ) / {ns ² (nh ² + nL ² )}] ^0.5 )
Here, when nh = 2.07 (HfO ₂ ), nL = 1.47 (SiO ₂ ), and ns = 1.47 (quartz glass), the Brewster angle θB of the polarizing film 93 is , Approximately 54.6 °.

However, the refractive indexes nh, nL, and ns of the respective materials are not uniquely limited to the above numerical values. The refractive index generally varies with the wavelength used from ultraviolet to visible light, and has a certain range. In addition, the refractive index may change by slightly adding various materials. For example, the refractive index nh of hafnium oxide is distributed in the range of 2.00 to 2.15, and the refractive index nL of silicon dioxide is distributed in the range of 1.45 to 1.48. In consideration of the change in refraction depending on the wavelength used, the refractive index ns of the prism (quartz glass) also changes. Assuming that the refractive index ns is in the range of 1.45 to 1.48 as in the case of SiO ₂ above, the Brewster angle θB of the polarizing film 93 derived from the above formula is 52.4 ° to 57.3 °. Will have a range.

As described above, since the refractive indexes nh, nL, and ns of each material slightly change depending on the material composition and the wavelength used, the Brewster angle θB can also be changed. However, in the following specific example, explanation will be made assuming that θB = 54.6 °. .

At this time, when the auxiliary line (dotted line) L1 is drawn as shown in FIG. 6, the angle θ2 formed between the polarizing film 93 and the first surface D1 is the incident angle θ1 of the principal ray of the illumination light beam EL1 incident on the polarizing film 93. It turns out that it becomes the same angle. That is, the first prism 91 is formed such that the angle θ2 formed by the first surface D1 and the polarizing film 93 is the same as the incident angle θ1 of the principal ray of the illumination light beam EL1.

In FIG. 6, the polarization beam splitter PBS is configured such that the illumination light beam EL1 is reflected by the polarization film 93 and the reflected light from the mask M (projection light beam EL2) is transmitted through the polarization film 93. The reflection / transmission characteristics of the illumination light beam EL1 and the projection light beam EL2 may be reversed. That is, the illumination light beam EL1 may be transmitted through the polarizing film 93, and the reflected light from the mask M (projection light beam EL2) may be reflected by the polarizing film 93. Such an embodiment will be described later.

As shown in FIG. 8, in the polarizing film 93, the direction connecting the first prism 91 and the second prism 92 is the film thickness direction. The polarizing film 93 includes a first film body H1 of silicon dioxide and a second film body H2 of hafnium oxide, and the first film body H1 and the second film body H2 are stacked in the film thickness direction. . Specifically, the polarizing film 93 is a periodic layer in which a plurality of layer bodies H composed of the first film body H1 and the second film body H2 are periodically stacked in the film thickness direction. Here, when the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 becomes the Brewster angle θB of 54.6 °, the polarizing film 93 has the layered body H of 18 cycles or more and 30 cycles or less. Formed in the periodic layer. The layer body H is provided on the both sides in the film thickness direction with the first film body H1 having a thickness of λ / 4 wavelength with respect to the wavelength λ of the illumination light beam EL1 and the first film body H1, and the illumination light beam EL1. And a pair of second film bodies H2 having a thickness of λ / 8 wavelength with respect to the wavelength λ. A plurality of layer bodies H configured as described above are laminated in the film thickness direction so that each second film body H2 of the layer body H is integrated with each second film body H2 of the adjacent layer body H. The second film body H2 having a film thickness of λ / 4 wavelength is formed. Therefore, in the polarizing film 93, the film bodies on both sides in the film thickness direction become a pair of second film bodies H2 having a film thickness of λ / 8 wavelength, and a pair of second films having a film thickness of λ / 8 wavelength. Between the bodies H2, first film bodies H1 having a thickness of λ / 4 wavelength and second film bodies H2 having a thickness of λ / 4 wavelength are alternately provided.

Further, the polarizing film 93 is fixed between the first prism 91 and the second prism 92 by an adhesive or an optical contact. For example, the polarizing beam splitter PBS is formed by forming the polarizing film 93 on the first prism 91 and then bonding the second prism 92 on the polarizing film 93 via an adhesive.

Next, the transmission characteristics and reflection characteristics of the polarizing beam splitter PBS will be described with reference to FIG. In FIG. 10, the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarization film 93 of the polarization beam splitter PBS is set to a Brewster angle θB of 54.6 °, the polarization film 93 is a 21 period layer, and the illumination light beam EL1 uses a YAG laser of the third (triple) harmonic. In the graph shown in FIG. 10, the horizontal axis represents the incident angle θ1, and the vertical axis represents the transmittance / reflectance. In the graph shown in FIG. 10, Rs is an S-polarized reflected light beam incident on the polarizing film 93, Rp is a P-polarized reflected light beam incident on the polarizing film 93, and Ts is incident on the polarizing film 93. An S-polarized transmitted light beam, and Tp is a P-polarized transmitted light beam incident on the polarizing film 93.

Here, the polarizing film 93 of the polarizing beam splitter PBS is configured to reflect the reflected light beam (illumination light beam) of S-polarized light and transmit the transmitted light beam (projected light beam) of P-polarized light. A polarizing film 93 having high reflectance and excellent film characteristics with high transmittance of the transmitted light beam Tp is obtained. In other words, a polarizing film having excellent film characteristics in which the reflectance of the reflected light beam Rp is low and the transmittance of the transmitted light beam Ts is low. In FIG. 10, the range of transmittance / reflectance of the polarizing film 93 that can be used optimally is the transmittance with respect to the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp at the Brewster angle θB of 54.6 °. -Reflectance is in a range that allows a decrease of -5%. That is, since the transmittance / reflectance at the Brewster angle θB is 100%, the range in which the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp are 95% or more can be optimally used. This is the range of transmittance and reflectance. In the case shown in FIG. 10, in the range where the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp are 95% or more, the range of the incident angle θ1 is 46.8 ° or more and 61.4 ° or less.

From the above, in FIG. 10, when the incident angle θ1 of the chief ray of the illumination beam EL1 incident on the polarizing film 93 of the polarization beam splitter PBS is set to a Brewster angle θB of 54.6 °, other than the chief ray of the illumination beam EL1 Since the incident angle range of the light beam can be 46.8 ° or more and 61.4 ° or less, the incident angle range of the illumination light beam EL1 incident on the polarizing film 93 can be set to a range of 14.6 °. I understand.

Therefore, in the illumination optical module ILM of the exposure apparatus U3, the angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 of the polarization beam splitter PBS is 46.8 ° or more and 61.4 ° or less, and illumination is performed. The illumination light beam EL1 can be emitted so that the principal ray of the light beam EL1 has a Brewster angle θB of 54.6 °.

Next, a polarization beam splitter PBS as a comparative example with respect to the polarization beam splitter PBS of the first embodiment shown in FIG. 8 will be described with reference to FIG. A polarizing beam splitter PBS as a comparative example has substantially the same configuration as that of the first embodiment, and is provided between the first prism 91, the second prism 92, and the first prism 91 and the second prism 92. The polarizing film 100. Since the first prism 91 and the second prism 92 are the same as those in the first embodiment, description thereof is omitted.

The polarizing film 100 of the polarizing beam splitter PBS as a comparative example is a film in which the principal ray of the illumination light beam EL1 incident on the polarizing film 100 has an incident angle θ1 of 45 °. Specifically, when the chief ray of the illumination light beam EL1 incident on the polarizing film 100 has an incident angle θ1 of 45 °, the polarizing film 100 includes the same layered body H as in the first embodiment for 31 periods or more in the film thickness direction. It is a periodic layer with 40 cycles or less.

Next, the transmission characteristics and reflection characteristics of the polarizing beam splitter PBS of the comparative example will be described with reference to FIG. In FIG. 11, the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarization film 100 of the polarization beam splitter PBS is 45 °, the polarization film 100 is a 33-period layer, and the illumination light beam EL1 is the first light beam EL1. A YAG laser of 3 (three times) harmonics is used. In the graph shown in FIG. 11, the horizontal axis represents the incident angle, the vertical axis represents the transmittance / reflectance, Rs represents the S-polarized reflected light beam incident on the polarizing film 100, and Rp represents the polarizing film 100 as in FIG. 10. An incident P-polarized reflected beam, Ts is an S-polarized transmitted beam incident on the polarizing film 100, and Tp is a P-polarized transmitted beam incident on the polarizing film 100.

In FIG. 11, the range of transmittance and reflectance of the polarizing film 100 that can be optimally used is a range in which the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp are 95% or more. In the case shown in FIG. 11, in the range where the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp are 95% or more, the range of the incident angle θ1 is 41.9 ° or more and 48.7 ° or less.

From the above, in FIG. 11, when the incident angle θ1 of the chief ray of the illumination beam EL1 incident on the polarizing film 100 of the polarization beam splitter PBS is 45 °, the incident angle θ1 of the beam other than the chief ray of the illumination beam EL1 Since the angle range can be 41.9 ° or more and 48.7 ° or less, it can be seen that the angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 100 can be set to a range of 6.8 °. Therefore, the polarization beam splitter PBS shown in FIG. 8 can make the angle range of the incident angle θ1 of the illumination light beam EL1 about twice as large as that of the polarization beam splitter PBS shown in FIG.

<Device manufacturing method>
Next, a device manufacturing method will be described with reference to FIG. FIG. 12 is a flowchart illustrating the device manufacturing method according to the first embodiment.

In the device manufacturing method shown in FIG. 12, first, the function / performance design of a display panel using, for example, a self-luminous element such as an organic EL is performed, and necessary circuit patterns and wiring patterns are designed using CAD or the like (step S201). Next, a mask M for a necessary layer is manufactured based on the pattern for each layer designed by CAD or the like (step S202). In addition, a supply roll FR1 around which a flexible substrate P (resin film, metal foil film, plastic, etc.) serving as a display panel base material is wound is prepared (step S203). Note that the roll-shaped substrate P prepared in step S203 has a surface modified as necessary, a pre-formed base layer (for example, micro unevenness by an imprint method), and light sensitivity. The functional film or transparent film (insulating material) previously laminated may be used.

Next, a backplane layer composed of electrodes, wiring, insulating film, TFT (thin film semiconductor), etc. constituting the display panel device is formed on the substrate P, and an organic EL or the like is laminated on the backplane. A light emitting layer (display pixel portion) is formed by the self light emitting element (step S204). This step S204 includes a conventional photolithography process in which the photoresist layer is exposed using the exposure apparatus U3 described in the previous embodiments, but a photosensitive silane coupling material is applied instead of the photoresist. Patterning the exposed substrate P to form a pattern based on hydrophilicity and water repellency on the surface, and wet processing for patterning the photosensitive catalyst layer and patterning the metal film (wiring, electrode, etc.) by electroless plating The process includes a process or a printing process in which a pattern is drawn with a conductive ink containing silver nanoparticles, or the like.

Next, the substrate P is diced for each display panel device continuously manufactured on the long substrate P by a roll method, and a protective film (environmental barrier layer) or a color filter is formed on the surface of each display panel device. A device is assembled by pasting sheets or the like (step S205). Next, an inspection process is performed to determine whether the display panel device functions normally or satisfies desired performance and characteristics (step S206). As described above, a display panel (flexible display) can be manufactured.

As described above, in the first embodiment, in the illumination optical system IL that is epi-illumination using the polarization beam splitter PBS, when the illumination light beam EL1 is reflected by the polarization beam splitter PBS and the projection light beam EL2 is transmitted, the polarization beam splitter PBS is used. The illumination optical module is shared by the illumination optical system IL and the projection optical system PL, and the outer shape of the lens element in the illumination optical module ILM at least near the polarization beam splitter PBS is set to a shape corresponding to the distribution of the illumination light beam EL1. An ILM and a polarizing beam splitter PBS can be provided between the mask M and the projection optical module PLM. For this reason, the physical interference between the illumination optical system IL and the projection optical system PL, particularly the physical interference condition between the illumination optical module ILM and the projection optical module PLM, is alleviated, and the illumination optical module ILM and the polarization beam splitter PBS The degree of freedom of arrangement and the degree of freedom of arrangement of the projection optical module PLM and the polarization beam splitter PBS can be increased, and the illumination optical system IL and the projection optical system PL can be easily arranged.

In the first embodiment, the fourth relay lens 56d and the third relay lens 56c adjacent to the polarization beam splitter PBS substantially include a portion (incident region S2) through which the illumination light beam EL1 passes, and substantially the illumination light beam. Since the lens outer shape does not have a portion where EL1 does not pass (non-incident region S1), the illumination condition (telecentricity, illuminance) of the illumination region IR is hardly lost while the compact illumination optical module ILM is obtained. The degree of freedom of arrangement of the illumination optical module ILM and the projection optical module PLM can be increased while maintaining uniformity and the like with high accuracy.

In the first embodiment, a part of the lens included in the illumination optical module ILM is lost to reduce the outer shape, but a part of the lens included in the projection optical module PLM may be lost to reduce the outer shape. Good. Also in this case, as in the illumination optical module ILM, the outer shape is reduced by deleting a part of the lens near the polarizing beam splitter PBS, for example, a part of the first lens group 71 on the first deflection member 70 side. be able to.

In the first embodiment, the polarizing film 93 of the polarizing beam splitter PBS can be formed by laminating the first film body H1 of silicon dioxide and the second film body H2 of hafnium oxide in the film thickness direction. Therefore, the polarizing film 93 has a high reflectance of the S-polarized reflected light beam (illumination light beam) incident on the polarizing film 93 and the transmittance of the P-polarized transmitted light beam (projected light beam) incident on the polarizing film 93. can do. As a result, the polarizing beam splitter PBS can suppress the load applied to the polarizing film 93 even when the illumination light beam EL1 having a high energy density having a wavelength equal to or shorter than the i-line is incident on the polarizing film 93. The light beam and the transmitted light beam can be suitably separated.

Further, in the first embodiment, the polarizing film 93 can be formed into a film in which the incident angle θ1 of the principal ray of the illumination light beam EL1 incident on the polarizing film 93 is a Brewster angle θB of 54.6 °. In other words, by setting the principal ray of the illumination light beam EL1 incident on the polarizing film 93 to a Brewster angle θB of 54.6 °, the angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 is 46 It can be set to 8 ° or more and 61.4 ° or less. For this reason, the angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 can be widened. As a result, the numerical aperture NA of the lens provided adjacent to the polarization beam splitter PBS can be increased by the amount that the angle range of the incident angle θ1 of the illumination light beam EL1 can be widened. For this reason, since it becomes possible to use a lens with a large numerical aperture NA, the resolution of the exposure apparatus U3 can be increased, and a fine mask pattern can be exposed to the substrate P.

The Brewster angle θB of the polarizing film 93 in the first embodiment can be in the range of 52.4 ° to 57.3 ° due to variations in the refractive index of the material (film body) constituting the polarizing film 93. The angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 may be set in consideration of the range.

In the first embodiment, the first surface D1 and the third surface D3 of the polarization beam splitter PBS can be made non-parallel, and the second surface D2 and the fourth surface D4 can be made parallel. In the first embodiment, the angle θ2 formed by the first surface D1 and the polarizing film 93 can be made the same as the incident angle θ1 of the principal ray of the illumination light beam EL1 incident on the polarizing film 93. For this reason, the first surface D1 can be a vertical surface with respect to the principal ray of the illumination light beam EL1 incident on the first surface D1, and the principal ray of the projection light beam EL2 incident on the second surface D2 The second surface D2 can be a vertical surface. Thereby, the polarization beam splitter PBS can suppress the reflection of the illumination light beam EL1 on the first surface D1, and can suppress the reflection of the projection light beam EL2 on the second surface D2.

In the first embodiment, the polarizing film 93 serving as a periodic layer can be formed by periodically laminating a plurality of predetermined layer bodies H in the film thickness direction. At this time, as an example, the polarizing film 93 (FIG. 8) in which the incident angle θ1 of the chief ray of the illumination light beam EL1 becomes the Brewster angle θB of 54.6 ° has the incident angle θ1 of the chief light beam of the illumination light beam EL1. Compared with the polarizing film 100 (FIG. 9) of the polarizing beam splitter PBS that is 45 °, the number of periodic layers can be reduced. Therefore, the polarizing film 93 shown in FIG. 8 can have a simple structure because the number of periodic layers is smaller than that of the polarizing film 100 shown in FIG. 9, and the manufacturing cost of the polarizing beam splitter PBS can be reduced.

In the first embodiment, the polarizing film 93 can be suitably fixed between the first prism 91 and the second prism 92 by an adhesive or an optical contact. In the first embodiment, the polarization beam splitter PBS and the quarter-wave plate 41 may be integrally fixed with an adhesive or an optical contact. In this case, the occurrence of relative positional deviation between the polarizing beam splitter PBS and the quarter wavelength plate 41 can be suppressed.

In the first embodiment, a wavelength of i-line or less can be used as the illumination light beam EL1, and for example, a harmonic laser or an excimer laser can be used. Therefore, the illumination light beam EL1 suitable for exposure processing is used. Is possible.

In the first embodiment, since the illuminance of the projection area PA can be adjusted by adjusting the polarization direction of the quarter-wave plate 41 by the polarization adjustment mechanism 68, the illuminance of the plurality of projection areas PA1 to PA6 is adjusted. Can be made uniform.

[Second Embodiment]
Next, an exposure apparatus U3 according to the second embodiment will be described with reference to FIG. In order to avoid overlapping descriptions, only different parts from the first embodiment will be described, and the same components as those in the first embodiment will be described with the same reference numerals as those in the first embodiment. FIG. 13 is a view showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment. Although the exposure apparatus U3 of the first embodiment is configured to hold the cylindrical reflective mask M on the rotatable mask holding drum 21, the exposure apparatus U3 of the second embodiment has a flat plate-like reflection. The mold mask MA is held by a movable mask holding mechanism 11.

In the exposure apparatus U3 of the second embodiment, the mask holding mechanism 11 scans and moves the mask stage 110 that holds the planar mask MA and the mask stage 110 along the X direction within a plane orthogonal to the center plane CL. A moving device (not shown).

Since the mask surface P1 of the mask MA in FIG. 13 is a plane substantially parallel to the XY plane, the principal ray of the projection light beam EL2 reflected from the mask MA is perpendicular to the XY plane. For this reason, the principal rays of the illumination light beam EL1 from the illumination optical systems IL1 to IL6 that illuminate the illumination regions IR1 to IR6 on the mask MA are also arranged so as to be perpendicular to the XY plane.

When the chief ray of the projection light beam EL2 reflected by the mask MA becomes perpendicular to the XY plane, the first line L1 and the second line L2 that partition the arrangement area E also change according to the chief ray of the projection light beam EL2. That is, the second line L2 is a direction perpendicular to the XY plane from the intersection point where the mask MA and the principal ray of the projection beam EL2 intersect, and the first line L1 is from the intersection point where the mask MA and the principal ray of the projection beam EL2 intersect. The direction is parallel to the XY plane. For this reason, the arrangement of the illumination optical module ILM is appropriately changed in accordance with the change in the arrangement region E, and the arrangement of the polarization beam splitter PBS is also appropriately changed in accordance with the change in the arrangement of the illumination optical module ILM.

When the principal ray of the projection light beam EL2 reflected from the mask MA is perpendicular to the XY plane, the first reflection surface P3 of the first deflecting member 70 included in the first optical system 61 of the projection optical module PLM is polarized. The projection light beam EL2 from the beam splitter PBS is reflected, and the reflected projection light beam EL2 is incident on the first concave mirror 72 through the first lens group 71. Specifically, the first reflecting surface P3 of the first deflecting member 70 is set to substantially 45 ° with respect to the second optical axis BX2 (XY surface).

Also in the second embodiment, similarly to FIG. 2, the illumination region IR2 (and IR4, IR6) from the center point of the illumination region IR1 (and IR3, IR5) on the mask MA when viewed in the XZ plane. ) To the center point of the projection area PA1 (and PA3, PA5) on the substrate P following the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6). The length is set substantially equal.

Also in the exposure apparatus U3 of FIG. 13, the lower order control device 16 controls the moving device (scanning exposure linear motor, fine movement actuator, etc.) of the mask holding mechanism 11 and is synchronized with the rotation of the substrate support drum 25. The mask stage 110 is driven. In the exposure apparatus U3 of FIG. 13, after performing scanning exposure by synchronous movement of the mask MA in the + X direction, an operation (rewinding) of returning the mask MA to the initial position in the −X direction is required. Therefore, when the substrate support drum 25 is continuously rotated at a constant speed and the substrate P is continuously fed at a constant speed, pattern exposure is not performed on the substrate P during the rewinding operation of the mask MA, and the transport direction of the substrate P is not related. The panel pattern is formed in a jump (separated) manner. However, since the speed of the substrate P (peripheral speed here) and the speed of the mask MA during scanning exposure are assumed to be 50 mm / s to 100 mm / s in practice, the mask stage is used when the mask MA is rewound. If 110 is driven at a maximum speed of, for example, 500 mm / s, the margin in the transport direction between panel patterns formed on the substrate P can be reduced.

[Third Embodiment]
Next, an exposure apparatus U3 of the third embodiment will be described with reference to FIG. In order to avoid overlapping descriptions, only parts different from the first embodiment (or the second embodiment) will be described, and the same components as those in the first embodiment (or the second embodiment) will be described in the first embodiment. The same reference numerals as those of the form (or the second embodiment) are given for explanation. FIG. 14 is a view showing the arrangement of an exposure apparatus (substrate processing apparatus) according to the third embodiment. The exposure apparatus U3 in FIG. 14 projects the reflected light (projected light beam EL2) from the reflective cylindrical mask M onto the flexible substrate P that is transported in a planar manner, as in the previous embodiments. On the other hand, the scanning exposure apparatus synchronizes the peripheral speed by the rotation of the cylindrical mask M and the transport speed of the substrate P.

The exposure apparatus U3 of the third embodiment is an example of an exposure apparatus when the reflection / transmission characteristics of the illumination light beam EL1 and the projection light beam EL2 in the polarization beam splitter PBS are reversed. In FIG. 14, among the relay lenses 56 arranged along the optical axis BX1 of the illumination optical module ILM, at least the relay lens 56 closest to the polarization beam splitter PBS does not pass the illumination light beam EL1 (non-incident region S1). By eliminating the shape, spatial interference with the projection optical module PLM is avoided. In addition, the extension line of the optical axis BX1 of the illumination optical module ILM intersects the first axis AX1 (line serving as the rotation center).

The polarization beam splitter PBS is disposed such that the second surface D2 and the fourth surface D4 parallel to each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, and the first surface D1 is projected. The optical module PLM is arranged so as to be perpendicular to the optical axis BX4 (fourth optical axis) of the optical module PLM. The intersection angle between the optical axis BX1 and the optical axis BX4 in the XZ plane is the same as that of the polarizing film 93 in FIG. 6, but here the projection light beam EL2 is changed to the Brewster angle θB (52.4 ° ˜ It is set to an angle other than 90 ° so as to reflect at 57.3 °.

The polarizing film 93 (wavefront splitting surface) of the polarizing beam splitter PBS in the present embodiment can be formed by stacking a plurality of silicon dioxide first film bodies and hafnium oxide second film bodies in the film thickness direction. Therefore, the polarizing film 93 can increase the reflectance of S-polarized light incident on the polarizing film 93 and the transmittance of P-polarized light incident on the polarizing film 93. As a result, the polarizing beam splitter PBS can suppress the load applied to the polarizing film 93 even when the illumination light beam EL1 having a high energy density having a wavelength equal to or shorter than the i-line is incident on the polarizing film 93. The light beam and the transmitted light beam can be suitably separated. The polarizing film 93 having a laminated structure of the first film body H1 of silicon dioxide and the second film body H2 of hafnium oxide is also applied to the polarizing beam splitter PBS used in the first embodiment or the second embodiment. The same applies.

In the case of the third embodiment, the P-polarized illumination light beam EL1 is incident from the fourth surface D4 of the polarization beam splitter PBS. Therefore, the illumination light beam EL1 passes through the polarizing film 93 and exits from the second surface D2, passes through the quarter-wave plate 41, is converted into circularly polarized light, and the illumination region IR on the mask surface P1 of the mask M. Is irradiated. As the mask M rotates, the projection light beam EL2 (circularly polarized light) generated (reflected) from the mask pattern appearing in the illumination region IR is converted to S-polarized light by the quarter-wave plate 41, and the first light beam of the polarizing beam splitter PBS. Incident on two surfaces D2. The projection light beam EL2 that has become S-polarized light is reflected by the polarizing film 93 and is emitted from the first surface D1 of the polarization beam splitter PBS toward the projection optical module PLM.

In the present embodiment, the principal ray Ls passing through the center (point Q1) of the illumination region IR on the mask M in the projection light beam EL2 is decentered from the optical axis BX4 of the projection optical module PLM, and the projection optical module PLM The light enters the first lens system G1. When the spread (numerical aperture NA) of the projection light beam EL2 is small, the polarizing beam splitter PBS is brought close to the cylindrical mask M by eliminating the portion of the lens system G1 through which the projection light beam EL2 does not substantially pass. In this case, a part of the projection optical module PLM (lens system G1) can be prevented from spatially interfering with a part of the cylindrical mask M and the illumination optical module ILM (lens 56).

In FIG. 14, the projection optical module PLM will be described as an all-refractive projection optical system in which the lens system G1 and the lens system G2 are arranged along the optical axis BX4. However, the projection optical module PLM is not limited to such a system. Alternatively, it may be a catadioptric projection optical system combining a flat mirror and a lens. Further, the lens system G1 may be an all-refractive system, and the lens system G2 may be a catadioptric system. When the image of the pattern in the illumination area IR on the mask surface P1 is formed on the projection area PA on the substrate P, The magnification may be any of enlargement or reduction other than equal magnification (× 1).

In FIG. 14, the substrate support member PH that supports the substrate P has a flat surface, and an air bearing layer (gas bearing) of about several μm is formed between the surface and the back surface of the substrate P. Within a predetermined range including at least the projection area PA of the substrate P, a constant tension is applied to the substrate P by using a nip type driving roller and the substrate P is flattened while the substrate P is in the longitudinal direction (X direction). A transport mechanism is provided for feeding to Of course, in this embodiment, the substrate P may be wound around a part of a cylindrical body such as the substrate support drum 25 as shown in FIG.

Further, as shown in FIG. 14, an exposure unit composed of the illumination optical module ILM, the polarization beam splitter PBS, the quarter wavelength plate 41, and the projection optical module PLM is connected to the rotation center axis (first axis) AX1 of the mask M. In the case where a plurality is provided in the direction to make a multi-layer, the exposure units may be arranged symmetrically with a center plane CL including the first axis AX1 that is the rotation center line of the mask M and parallel to the ZY plane.

In the third embodiment described above, the polarization beam splitter PBS provided with the polarizing film (multilayer film) 93 having a laminated structure of the hafnium oxide film body and the silicon dioxide film body is used, so that the illumination light beam EL1 has an ultraviolet wavelength region. Even when a high-intensity laser beam is used, high-resolution pattern exposure can be stably continued. The polarizing beam splitter PBS provided with such a polarizing film 93 can be similarly used in the first and second embodiments.

[Fourth Embodiment]
Next, an exposure apparatus U3 according to the fourth embodiment will be described with reference to FIG. In order to avoid overlapping descriptions, only the parts different from the first embodiment (from the third embodiment) will be described, and the same components as those in the first embodiment (from the third embodiment) will be described in the first embodiment. Description will be made with the same reference numerals as those of the embodiment (from the third embodiment). FIG. 15 is a view showing the overall arrangement of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment. Although the exposure apparatus U3 of the first embodiment is configured to hold the cylindrical reflective mask M on the rotatable mask holding drum 21, the exposure apparatus U3 of the fourth embodiment has a flat plate-like reflection. The mold mask MA is held by a movable mask holding mechanism 11.

In the exposure apparatus U3 of the fourth embodiment, the mask holding mechanism 11 scans and moves the mask stage 110 that holds the planar mask MA and the mask stage 110 along the X direction in a plane orthogonal to the center plane CL. A moving device (not shown).

Since the mask surface P1 of the mask MA in FIG. 15 is substantially a plane parallel to the XY plane, the principal ray of the projection light beam EL2 reflected from the mask MA is perpendicular to the XY plane. For this reason, the principal rays of the illumination light beam EL1 from the illumination optical systems IL1 to IL6 that illuminate the illumination regions IR1 to IR6 on the mask MA are also arranged so as to be perpendicular to the XY plane.

When the principal ray of the illumination light beam EL1 illuminated by the mask MA is perpendicular to the XY plane, the polarization beam splitter PBS is configured such that the incident angle θ1 of the principal beam of the illumination light beam EL1 incident on the polarizing film 93 is the Brewster angle θB (52 .4 ° to 57.3 °), and the principal ray of the illumination light beam EL1 reflected by the polarizing film 93 is arranged so as to be perpendicular to the XY plane. With the change in the arrangement of the polarization beam splitter PBS, the arrangement of the illumination optical module ILM is also changed as appropriate.

Also in the fourth embodiment, similarly to FIG. 2, the illumination region IR2 (and IR4, IR6) from the center point of the illumination region IR1 (and IR3, IR5) on the mask MA when viewed in the XZ plane. ) To the center point of the projection area PA1 (and PA3, PA5) on the substrate P following the support surface P2 to the center point of the projection area PA2 (and PA4, PA6) Are set substantially equal.

In the exposure apparatus U3 of FIG. 15 as well, the lower order control device 16 controls the moving device (scanning exposure linear motor, fine movement actuator, etc.) of the mask holding mechanism 11 in synchronization with the rotation of the substrate support drum 25. The mask stage 110 is driven. In the exposure apparatus U3 of FIG. 15, after performing scanning exposure by synchronous movement of the mask MA in the + X direction, an operation (rewinding) of returning the mask MA to the initial position in the −X direction is required. Therefore, when the substrate support drum 25 is continuously rotated at a constant speed and the substrate P is continuously fed at a constant speed, pattern exposure is not performed on the substrate P during the rewinding operation of the mask MA, and the transport direction of the substrate P is not related. The panel pattern is formed in a jump (separated) manner. However, since the speed of the substrate P (peripheral speed here) and the speed of the mask MA during scanning exposure are assumed to be 50 mm / s to 100 mm / s in practice, the mask stage is used when the mask MA is rewound. If 110 is driven at a maximum speed of, for example, 500 mm / s, the margin in the transport direction between panel patterns formed on the substrate P can be reduced.

[Fifth Embodiment]
Next, an exposure apparatus U3 according to the fifth embodiment will be described with reference to FIG. In order to avoid overlapping descriptions, only the parts different from the first embodiment (from the fourth embodiment) will be described, and the same components as those in the first embodiment (from the fourth embodiment) will be described in the first embodiment. Description will be made with the same reference numerals as those of the embodiment (from the fourth embodiment). FIG. 16 is a view showing the arrangement of an exposure apparatus (substrate processing apparatus) according to the fifth embodiment. The exposure apparatus U3 of the fifth embodiment is an example of an exposure apparatus when the reflection / transmission characteristics of the illumination light beam EL1 and the projection light beam EL2 in the polarization beam splitter PBS are reversed. In FIG. 16, among the relay lenses 56 arranged along the optical axis BX1 of the illumination optical module ILM, at least the relay lens 56 closest to the polarization beam splitter PBS cuts out a portion through which the illumination light beam EL1 does not pass. Spatial interference with the projection optical module PLM is avoided. In addition, the extension line of the optical axis BX1 of the illumination optical module ILM intersects the first axis AX1 (line serving as the rotation center).

The polarization beam splitter PBS is disposed such that the second surface D2 and the fourth surface D4 parallel to each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, and the first surface D1 is projected. The optical module PLM is arranged so as to be perpendicular to the optical axis BX4 (fourth optical axis) of the optical module PLM. The intersection angle between the optical axis BX1 and the optical axis BX4 in the XZ plane is the same as the condition of FIG. 6 of the polarizing film 93. Here, the projection light beam EL2 is changed into the Brewster angle θB (52.4 ° to 57). .3 °) is set to an angle other than 90 °.

In the case of the present embodiment, the P-polarized illumination light beam EL1 is incident from the fourth surface D4 of the polarization beam splitter PBS. Therefore, the illumination light beam EL1 passes through the polarizing film 93 and exits from the second surface D2, passes through the quarter-wave plate 41, is converted into circularly polarized light, and the illumination region IR on the mask surface P1 of the mask M. Is irradiated. As the mask M rotates, the projection light beam EL2 (circularly polarized light) generated (reflected) from the mask pattern appearing in the illumination region IR is converted to S-polarized light by the quarter-wave plate 41, and the first light beam of the polarizing beam splitter PBS. Incident on two surfaces D2. The projection light beam EL2 that has become S-polarized light is reflected by the polarizing film 93 and is emitted from the first surface D1 of the polarization beam splitter PBS toward the projection optical module PLM.

In the present embodiment, the principal ray Ls passing through the center of the illumination area IR on the mask M in the projection light beam EL2 is decentered from the optical axis BX4 of the projection optical module PLM, and is the first lens system of the projection optical module PLM. Incident on G1. When the spread (numerical aperture NA) of the projection light beam EL2 is small, it is possible to avoid spatial interference with the lens 56 of the illumination optical module ILM by cutting out a portion of the lens system G1 through which the projection light beam EL2 does not pass. it can.

In FIG. 16, the projection optical module PLM will be described as an all-refractive projection optical system in which the lens system G1 and the lens system G2 are arranged along the optical axis BX4. However, the projection optical module PLM is not limited to such a system. Alternatively, it may be a catadioptric projection optical system combining a flat mirror and a lens. Further, the lens system G1 may be an all-refractive system, and the lens system G2 may be a catadioptric system. When the image of the pattern in the illumination area IR on the mask surface P1 is formed on the projection area PA on the substrate P, The magnification may be any of enlargement or reduction other than equal magnification (× 1).

In FIG. 16, the substrate support member PH that supports the substrate P has a flat surface, and an air bearing layer (gas bearing) of about several μm is formed between the surface and the back surface of the substrate P. In addition, within a predetermined range including at least the projection area PA of the substrate P, there is provided a transport mechanism that feeds the substrate P in the longitudinal direction (X direction) while applying a certain tension to the substrate P to make it flat. Of course, in this embodiment, the substrate P may be wound around a part of a cylindrical body such as the substrate support drum 25 as shown in FIG.

Further, as shown in FIG. 16, an exposure unit composed of the illumination optical module ILM, the polarization beam splitter PBS, the quarter wavelength plate 41, and the projection optical module PLM is connected to the rotation center axis (first axis) AX1 of the mask M. In the case where a plurality is provided in the direction to make a multi-layer, the exposure units may be arranged symmetrically with a center plane CL including the first axis AX1 that is the rotation center line of the mask M and parallel to the ZY plane.

Even in the exposure apparatus U3 as in the fifth embodiment described above, a polarization beam splitter PBS provided with a polarizing film (multilayer film) 93 having a laminated structure of a hafnium oxide film body and a silicon dioxide film body is used. Thus, even when high-luminance laser light in the ultraviolet wavelength region is used as the illumination light beam EL1, high-resolution pattern exposure can be stably continued.

The exposure apparatus U3 described in each of the above embodiments uses a mask M in which a predetermined mask pattern is fixed in a planar shape or a cylindrical shape. However, an apparatus that projects and exposes a variable mask pattern, for example, Patent No. It can be similarly used as a beam splitter of the maskless exposure apparatus disclosed in Japanese Patent No. 423036.

The maskless exposure apparatus includes a programmable mirror array that receives exposure illumination light reflected by a beam splitter, and a beam (reflected light beam) patterned by the mirror array. The microlens array may be included) and projected onto the substrate. When the polarizing beam splitter PBS as shown in FIG. 8 is used as the beam splitter of such a maskless exposure apparatus, even if high-intensity laser light in the ultraviolet wavelength region is used as illumination light, high resolution is achieved. Pattern exposure can be continued stably.

The polarizing beam splitter PBS used in each of the previous embodiments has, as the polarizing film 93, a film body whose main component is silicon dioxide (SiO ₂ ) and a film body whose main component is hafnium oxide (HfO ₂ ) in the film thickness direction. Although it is configured by repeatedly laminating, other materials may be used. For example, similarly to quartz and silicon dioxide (SiO ₂ ), magnesium fluoride (MgF ₂ ), which is a material having a low refractive index with respect to ultraviolet rays in the vicinity of a wavelength of 355 nm and high resistance to ultraviolet laser light, is also used. it can. Further, similarly to hafnium oxide (HfO ₂ ), zirconium oxide (ZrO ₂ ), which is a material having a high refractive index with respect to ultraviolet rays near a wavelength of 355 nm and high resistance to ultraviolet laser light, can be used. Therefore, simulation results of the characteristics of the polarizing film 93 obtained by changing the combination of these materials will be described with reference to FIGS. 17 to 22 below.

FIG. 17 schematically illustrates the configuration of the polarizing film 93 when a film body of hafnium oxide (HfO ₂ ) is used as a high refractive index material and a magnesium fluoride (MgF ₂ ) film body is used as a low refractive index material. It is a cross section shown in. When the refractive index nh of hafnium oxide is 2.07, the refractive index nL of magnesium fluoride is 1.40, and the refractive index ns of the prism (quartz glass) is 1.47, the Brewster angle θB is
θB = arcsin ([(nh ² × nL ² ) / {ns ² (nh ² + nL ² )}] ^0.5 ),
Therefore, it becomes about 52.1 °.

Therefore, a polarizing film 93 in which a layer of hafnium oxide having a thickness of 22.8 nm is laminated on top and bottom of a film body of magnesium fluoride having a thickness of 78.6 nm is used as a periodic layer. Provided between the joint surfaces of the prism 91 and the second prism 92. In the polarizing beam splitter PBS provided with the polarizing film 93 shown in FIG. 17, the optical characteristics as shown in FIG. 18 were obtained as a result of simulation. When the wavelength of illumination light in the simulation is 355 nm, the incident angle θ1 at which the reflectance Rp for P-polarized light is 5% or less (transmittance Tp is 95% or more) is 43.5 ° or more, and the reflectance Rs for S-polarized light Is 95% or more (transmittance Ts is 5% or less), and the incident angle θ1 is 59.5 ° or less. Also in this example, good polarization splitting characteristics can be obtained in a range of about 15 ° from −8.6 ° to + 7.4 ° with respect to the Brewster angle θB (52.1 °).

FIG. 19 schematically shows the configuration of the polarizing film 93 when a zirconium oxide (ZrO ₂ ) film is used as the high refractive index material and a silicon dioxide (SiO ₂ ) film is used as the low refractive index material. FIG. When the refractive index nh of zirconium oxide is 2.12, the refractive index nL of silicon dioxide is 1.47, and the refractive index ns of the prism (quartz glass) is 1.47, the Brewster angle θB is about 55.2 °.

Therefore, a polarizing film 93 in which 21 cycles of zirconium oxide film bodies having a thickness of 20.2 nm are laminated on top and bottom of a silicon dioxide film body having a thickness of 88.2 nm is used as the first prism. It is provided between the joint surfaces of 91 and the second prism 92. In the polarizing beam splitter PBS provided with the polarizing film 93 shown in FIG. 19, the optical characteristics as shown in FIG. 20 were obtained as a result of the simulation. When the wavelength of illumination light in the simulation is 355 nm, the incident angle θ1 at which the reflectance Rp for P-polarized light is 5% or less (transmittance Tp is 95% or more) is 47.7 °, and the reflectance Rs for S-polarized light is The incident angle θ1 that is 95% or more (transmittance Ts is 5% or less) is 64.1 °. Also in this example, good polarization separation characteristics can be obtained in a range of about 16.4 ° from −7.5 ° to + 8.9 ° with respect to the Brewster angle θB (55.2 °).

Further, FIG. 21 shows the configuration of the polarizing film 93 when a film body of zirconium oxide (ZrO ₂ ) is used as a high refractive index material and a magnesium fluoride (MgF ₂ ) film body is used as a low refractive index material. It is a cross section shown typically. When the refractive index nh of zirconium oxide is 2.12, the refractive index nL of magnesium fluoride is 1.40, and the refractive index ns of the prism (quartz glass) is 1.47, the Brewster angle θB is It will be about 52.6 °.

Therefore, a polarizing film 93 in which 21 cycles of zirconium oxide film bodies having a thickness of 22.1 nm are laminated on top and bottom of a magnesium fluoride film body having a thickness of 77.3 nm is formed as a first layer. Provided between the joint surfaces of the prism 91 and the second prism 92. In the polarizing beam splitter PBS provided with the polarizing film 93 shown in FIG. 21, the optical characteristics as shown in FIG. 22 were obtained as a result of the simulation. When the wavelength of illumination light in the simulation is 355 nm, the incident angle θ1 at which the reflectance Rp for P-polarized light is 5% or less (transmittance Tp is 95% or more) is 43.1 °, and the reflectance Rs for S-polarized light is R3.1. The incident angle θ1 that is 95% or more (transmittance Ts is 5% or less) is 60.7 °. Also in this example, good polarization separation characteristics can be obtained in a range of about 17.6 ° from −9.5 ° to + 8.1 ° with respect to the Brewster angle θB (52.6 °).

As shown in FIG. 4, the projection light beam EL2 reflected by the mask M is projected onto the substrate P with a spread angle θna limited by the numerical aperture (NA) of the projection optical system PL of equal magnification. . The numerical aperture NA is defined by NA = sin (θna), and determines the resolving power RS of the projection image by the projection optical system PL together with the wavelength λ of the illumination light beam EL1. The numerical aperture of the illumination light beam EL1 is also set to be equal to or less than the numerical aperture NA on the mask M side of the projection optical system PL when the mask M is a flat mask surface P1 as shown in FIG. The

For example, when the wavelength λ of the illumination light beam EL1 is 355 nm, the process factor k is 0.5, and 3 μm is obtained as the resolving power RS, the mask side of the projection optical system PL of the same magnification from RS = k · (λ / NA) The numerical aperture NA is about 0.06 (θna≈3.4 °). The numerical aperture of the illumination light beam EL1 from the illumination optical system IL is generally slightly smaller than the numerical aperture NA on the mask M side of the projection optical system PL, but is assumed to be equal here.

However, as described above with reference to FIG. 5A, when the mask surface P1 is the cylindrical mask M formed along the cylindrical surface having the radius Rm, the principal ray of the illumination light beam EL1 is related to the circumferential direction of the cylindrical mask M. Is spreading at a wider angle. Here, when the exposure width in the circumferential direction of the illumination region IR on the mask shown in FIG. 3 is De, the most peripheral of the exposure width De with respect to the principal ray of the illumination light beam EL1 passing through the point Q1 in FIG. 5A. The chief ray of the illumination light beam EL1 passing through the end of the direction is generally inclined by an angle φ as follows.
sinφ≈ (De / 2) / (Rm / 2)

Here, when the curvature radius Rm of the cylindrical mask M is 150 mm and the exposure width De is 10 mm, the angle φ is about 3.8 °. Furthermore, an angle θna (about 3.4 °) corresponding to the numerical aperture of the illumination light beam EL1 is added to the chief ray of the illumination light beam EL1 passing through the edge in the most circumferential direction of the exposure width De. The divergence angle of the illumination light beam EL1 takes a range of ± (φ + θna) with respect to the principal ray of the illumination light beam EL1 passing through the point Q1. That is, in the above numerical example, ± 7.2 °, and the illumination light beam EL1 is distributed over an angular range of 14.4 ° with respect to the circumferential direction of the cylindrical mask surface.

As described above, the illumination light beam EL1 is set so as to enter the cylindrical mask surface P1 with a relatively large angle range. Even in such an angle range, the illumination light beam EL1 is shown in FIGS. With the polarization beam splitter PBS of the embodiment and the polarization beam splitter PBS of the example shown in FIGS. 17 to 22, the illumination light beam EL1 and the projection light beam EL2 can be polarized and separated satisfactorily.

In the exposure apparatus in which the projection optical system PL enlarges and projects the pattern of the mask surface P1 onto the substrate P, the numerical aperture NAm on the mask surface P1 side of the projection optical system PL is smaller than the numerical aperture NAp on the substrate P side. Increases by the magnification Mp. For example, if the same resolving power as the resolving power RS obtained with the same-magnification projection optical system exemplified above is obtained, the numerical aperture NA on the mask side in the projection optical system with the magnification Mp of 2 is about 0.12. Accordingly, the spread angle θna of the projection light beam EL2 is also increased to ± 6.8 ° (14.6 ° in width). However, the incident angle range in which polarization polarization can be satisfactorily separated by the polarization beam splitter PBS is about 14.6 ° in the case of FIG. 10, about 16 ° in the case of FIG. 18, about 16.4 ° in the case of FIG. In the case of 22, the angle is about 17.6 °, and in any case, since the spread angle θna is covered, enlarged projection exposure can be performed with good image quality.

As described above, when the mask M is a cylindrical mask, the polarization separation characteristic is good so that the maximum angular range in the circumferential direction of the illumination light beam EL1 irradiated to the illumination region IR on the mask surface P1 is covered. A polarizing beam splitter PBS having an incident angle range including a small Brewster angle θB is selected. Also, the Brewster angle θB of the polarization beam splitter PBS illustrated in FIGS. 17 to 22 is 50 ° or more, and as shown in FIGS. 4 and 6, the optical axis BX1 of the illumination optical system IL and the projection optics Even when the optical axis BX2 (or BX3) of the system PL is made parallel, each traveling direction in the XZ plane of the illumination light beam EL1 directed to the cylindrical mask M and the projection light beam EL2 reflected by the mask surface is defined as the central plane CL. It is possible to incline it, and it is possible to ensure good imaging performance.

In each of the embodiments described above, the hafnium oxide film body or the zirconium oxide film body constituting the polarizing film 93 exhibits a high refractive index nh with respect to light in the ultraviolet region (wavelength 400 nm or less). The ratio nh / ns between the refractive index nh and the refractive index ns of the base material (prisms 91 and 92) may be 1.3 or more. As a high refractive index material, a titanium dioxide (TiO ₂ ) film body, five A film of tantalum oxide (Ta ₂ O ₅ ) can also be used.

DESCRIPTION OF SYMBOLS 1 Device manufacturing system 2 Substrate supply apparatus 4 Substrate collection | recovery apparatus 5 Host control apparatus 11 Mask holding mechanism 12 Substrate support mechanism 13 Light source apparatus 16 Subordinate control apparatus 21 Mask holding drum 25 Substrate support drum 31 Light source 32 Light guide member 41 1/4 wavelength Plate 51 Collimator lens 52 Fly eye lens 53 Condenser lens 54 Cylindrical lens 55 Illumination field stop 56a to 56d Relay lens 61 First optical system 62 Second optical system 63 Projection field stop 64 Focus correction optical member 65 Image shift optical member 66 Magnification Optical member for correction 67 Rotation correction mechanism 68 Polarization adjustment mechanism 70 First deflection member 71 First lens group 72 First concave mirror 80 Second deflection member 81 Second lens group 82 Second concave mirror 91 First prism 92 Second prism 93 Polarization Membrane 10 mask stage (Second Embodiment)
P substrate FR1 supply roll FR2 recovery roll U1 to Un processing apparatus U3 exposure apparatus (substrate processing apparatus)
M mask MA mask (second embodiment)
AX1 1st axis AX2 2nd axis P1 Mask surface P2 Support surface P7 Intermediate image plane EL1 Illumination beam EL2 Projection beam Rm Curvature radius Rfa Curvature radius CL Center plane PBS Polarizing beam splitter IR1 to IR6 Illumination region IL1 to IL6 Illumination optical system ILM illumination Optical module PA1 to PA6 Projection area PL1 to PL6 Projection optical system PLM Projection optical module BX1 First optical axis BX2 Second optical axis BX3 Third optical axis D1 First surface of polarization beam splitter PBS D2 Second surface of polarization beam splitter PBS D3 Third surface of polarizing beam splitter PBS D4 Fourth surface of polarizing beam splitter PBS θ angle θ1 (β) Incident angle θB Brewster angle S1 Non-incident region S2 Incident region H Layer body H1 First film body H2 Second film body

Claims

A mask holding member for holding a reflective mask;
A beam splitter that reflects incident illumination light flux toward the mask while transmitting a projection light flux obtained by the illumination light beam being reflected by the mask;
An illumination optical module for causing the illumination light beam to enter the beam splitter;
A projection optical module that projects the projection light beam transmitted through the beam splitter onto a light-sensitive substrate, and
The illumination optical system for guiding the illumination light beam to the mask includes the illumination optical module and the beam splitter,
The projection optical system for guiding the projection light beam to the substrate includes the projection optical module and the beam splitter,
The illumination optical module and the beam splitter are substrate processing apparatuses provided between the mask and the projection optical module.
The illumination optical system includes an optical member that limits an illumination area on the mask by the illumination light beam to a rectangular shape,
The illumination optical module has a first lens that enters the illumination light beam and emits the light toward the beam splitter,
The substrate processing apparatus according to claim 1, wherein the first lens is shaped to have an outer shape corresponding to a first incident region through which the illumination light beam passes.
The substrate processing apparatus according to claim 2, wherein the first lens has a shape in which a part of a lens having a circular outer shape is cut out.
The substrate processing apparatus according to claim 2, wherein the first lens is disposed adjacent to the beam splitter.
The projection optical module has a second lens that enters the projection light beam from the beam splitter,
The said 2nd lens is shape | molded so that it may have the external shape of the shape corresponding to the 2nd incident area | region through which the said projection light beam which goes to the projection area | region on the said photosensitive substrate passes. 2. The substrate processing apparatus according to 1.
The substrate processing apparatus according to claim 5, wherein the second lens has a shape in which a part of a lens having a circular outer shape is cut out.
The substrate processing apparatus according to claim 5, wherein the second lens is disposed adjacent to the beam splitter.
A substrate support member for supporting the substrate by a support surface;
The mask surface of the mask is formed along a first circumferential surface having a first radius of curvature around the first axis,
The support surface of the substrate support member is formed along a second circumferential surface having a second radius of curvature centered on a second axis,
The first axis and the second axis are parallel,
An angle between the central plane passing through the first axis and the second axis and the principal ray of the projected light beam in the circumferential direction of the first circumferential surface of the mask surface is θ,
The incident angle β of the principal ray of the illumination light beam incident on the beam splitter is in a range of 45 ° × 0.8 ≦ β ≦ (45 ° + θ / 2) × 1.2. The substrate processing apparatus according to claim 1.
A substrate support member for supporting the substrate by a support surface;
The mask surface of the mask is formed along a first circumferential surface having a first radius of curvature around the first axis,
The support surface of the substrate support member is formed along a second circumferential surface having a second radius of curvature centered on a second axis,
The first axis and the second axis are parallel,
The illumination optical system is provided in a plurality corresponding to a plurality of illumination areas formed on the mask, and the plurality of illumination optical systems guides the illumination light flux to the plurality of illumination areas,
A plurality of the projection optical systems are provided corresponding to the plurality of illumination optical systems, and the plurality of projection optical systems are a plurality of projection light beams from the plurality of illumination regions formed on the substrate. To the projected area of
The plurality of illumination optical systems and the plurality of projection optical systems are arranged in two rows in the circumferential direction of the mask,
The first row illumination optical system, the first row projection optical system, the second row illumination optical system, and the second row projection optical system sandwich a center plane passing through the first axis and the second axis. The substrate processing apparatus according to claim 1, which is arranged symmetrically.
The beam splitter is a polarizing beam splitter, and further comprises a wave plate provided between the polarizing beam splitter and the mask,
The wave plate changes the polarization state of the illumination light beam from the polarization beam splitter toward the mask, and further changes the polarization state of the projection light beam incident on the polarization beam splitter from the mask. The substrate processing apparatus according to claim 1.
The illumination optical system directs the principal ray of the illumination light beam traveling from the beam splitter toward the mask surface of the mask from a first axis to a radial position of about ½ of the first curvature radius, The substrate processing apparatus of Claim 8 or 9 containing the cylindrical lens made into a mutually non-parallel state regarding the circumferential direction along the said 1st circumferential surface.
11. The alignment characteristic of the illumination light beam illuminated on the mask from the illumination optical system is set so that chief rays of the projection light beam reflected by the mask are parallel to each other in a telecentric state. The substrate processing apparatus of any one of Claims.
The substrate processing apparatus according to claim 1, wherein the illumination light beam is a laser.
A substrate processing apparatus according to any one of claims 1 to 13,
A device manufacturing system comprising: a substrate supply device that supplies the substrate to the substrate processing apparatus.
Projecting and exposing the substrate using the substrate processing apparatus according to claim 1;
Forming a pattern of the mask on the substrate by processing the substrate subjected to the projection exposure.
A mask holding member for holding a reflective mask;
A beam splitter that reflects incident illumination light flux toward the mask while reflecting a projection light flux obtained by the illumination light beam being reflected by the mask;
An illumination optical module for causing the illumination light beam to enter the beam splitter;
A projection optical module that projects the projected light beam reflected by the beam splitter onto a light-sensitive substrate, and
The illumination optical system for guiding the illumination light beam to the mask includes the illumination optical module and the beam splitter,
The projection optical system for guiding the projection light beam to the substrate includes the projection optical module and the beam splitter,
The illumination optical module and the beam splitter are substrate processing apparatuses provided between the mask and the projection optical module.
The illumination optical system includes an optical member that limits an illumination area on the mask by the illumination light beam to a rectangular shape or a rectangular shape,
The illumination optical module has a first lens that enters the illumination light beam and emits the light toward the beam splitter,
The substrate processing apparatus according to claim 16, wherein the first lens is shaped to have an outer shape corresponding to a first incident region through which the illumination light beam passes.
The substrate processing apparatus according to claim 17, wherein the first lens has a shape in which a part of a lens having a circular outer shape is cut out.
The substrate processing apparatus according to claim 17, wherein the first lens is disposed adjacent to the beam splitter.
The projection optical module has a second lens that enters the projection light beam,
20. The substrate processing apparatus according to claim 16, wherein the second lens is shaped so as to have an outer shape corresponding to a second incident region through which the projection light beam passes.
A first prism;
A second prism having a surface facing one surface of the first prism;
In order to separate the incident light beam from the first prism toward the second prism into a reflected light beam reflected to the first prism side or a transmitted light beam transmitted to the second prism side according to the polarization state, A first film body mainly composed of silicon dioxide and a second film body mainly composed of hafnium oxide, which are provided between the opposing surfaces of the first prism and the second prism, are stacked in the film thickness direction. A polarizing film;
A polarization beam splitter.
The polarizing beam splitter according to claim 21, wherein the polarizing film is a film having a Brewster angle of 52.4 ° to 57.3 °.
The first prism has a first surface on which the incident light beam is incident, and a second surface on which the reflected light beam reflected by the polarizing film is emitted,
The second prism has a third surface facing the first surface, and a fourth surface facing the second surface,
The first surface is a vertical surface orthogonal to the principal ray of the incident light flux that is incident,
The second surface is a vertical surface orthogonal to the principal ray of the reflected luminous flux that is emitted,
The third surface is provided non-parallel to the first surface;
The polarization beam splitter according to claim 21 or 22, wherein the fourth surface is provided in parallel with the second surface.
24. The polarizing beam splitter according to claim 23, wherein an angle formed between the first surface and the polarizing film is the same as an incident angle of a principal ray of the incident light beam incident on the polarizing film.
The polarizing film is a periodic layer in which a plurality of layer bodies are laminated in the film thickness direction,
The layer body is
The first film body made of silicon dioxide and having a thickness of λ / 4 wavelength with respect to the wavelength λ of the incident light beam;
The second film body is provided on both sides in the film thickness direction with the first film body interposed therebetween, is made of hafnium oxide, and has a thickness of λ / 8 wavelength with respect to the wavelength λ of the incident light beam. The polarizing beam splitter according to any one of claims 21 to 24.
The polarizing beam splitter according to any one of claims 21 to 25, wherein the polarizing film is fixed between the first prism and the second prism by an adhesive or an optical contact.
A mask holding member for holding a reflective mask;
An illumination optical module for guiding an illumination beam to the mask;
A projection optical module that projects a projection light beam obtained by the illumination light beam being reflected by the mask onto a projection target;
27. The polarizing beam splitter and the wave plate according to claim 21, which are disposed between the illumination optical module and the mask and between the mask and the projection optical module. And having
The illumination light beam has an incident angle incident on the polarizing film of the polarizing beam splitter in a predetermined angle range including a Brewster angle of 52.4 ° to 57.3 °,
The wave plate reflects the illumination light beam from the polarization beam splitter so that the polarization beam splitter reflects the illumination light beam toward the mask and transmits the projection light beam toward the projection optical module. A substrate processing apparatus for polarizing and further polarizing the projection light beam from the mask.
The substrate processing apparatus according to claim 27, wherein the predetermined angle range is not less than 41.5 ° and not more than 61.4 °.
The substrate processing apparatus according to claim 27 or 28, wherein an incident angle of the principal ray of the illumination light beam incident on the polarizing film is the Brewster angle.
30. The substrate processing apparatus according to claim 27, wherein the illumination light beam has a wavelength of i-line or less.
31. The substrate processing apparatus according to claim 27, wherein the illumination light beam is a harmonic laser.
32. The substrate processing apparatus according to claim 27, wherein the illumination light beam is an excimer laser.
The substrate processing apparatus according to any one of claims 27 to 32, wherein the illumination light beam illuminating the mask from the illumination optical module is a light beam in which the projection light beam reflected by the mask is telecentric.
The substrate processing apparatus according to claim 27, wherein the polarizing beam splitter and the wave plate are fixed by an adhesive or an optical contact.
The illumination optical module is provided in a plurality corresponding to a plurality of illumination areas formed on the mask, and the plurality of illumination optical modules guides the illumination light flux to the plurality of illumination areas,
A plurality of the projection optical modules are provided corresponding to the plurality of illumination optical modules, and the plurality of projection optical modules are formed on the projection target with the plurality of projection light beams from the plurality of illumination regions. Led to multiple projection areas,
A plurality of the polarizing beam splitter and the wave plate are provided corresponding to the plurality of illumination optical modules and the plurality of projection optical modules,
35. The substrate processing apparatus according to claim 27, further comprising a polarization adjusting unit that adjusts the polarization directions of the plurality of wavelength plates.
A substrate processing apparatus according to any one of claims 27 to 35;
A device manufacturing system comprising: a substrate supply device that supplies the projection target to the substrate processing apparatus.
Performing projection exposure on the projection object using the substrate processing apparatus according to any one of claims 27 to 35;
Forming a pattern of the mask by processing the projection-exposed object to be projected.
A mask holding member for holding a reflective mask;
An illumination optical module for guiding an illumination beam to the mask;
A projection optical module that projects a projection light beam obtained by the illumination light beam being reflected by the mask onto a projection target;
3. The polarizing beam splitter according to claim 1, wherein the polarizing beam splitter and the wave plate are disposed between the illumination optical module and the mask and between the mask and the projection optical module. And having
The projection light beam has an incident angle incident on the polarizing film of the polarizing beam splitter in a predetermined angle range including a Brewster angle of 52.4 ° to 57.3 °,
The wave plate transmits the illumination light beam from the polarization beam splitter so that the polarization beam splitter transmits the illumination light beam toward the mask and reflects the projection light beam toward the projection optical module. A substrate processing apparatus for polarizing and further polarizing the projection light beam from the mask.
A polarizing beam splitter that has a polarizing film on a joint surface between two optical prisms, and that separates ultraviolet light having a central wavelength λ from one optical prism toward the other optical prism by the polarizing film according to a polarization state;
The polarizing film is
A first film body having a first refractive index larger than the refractive index of the optical prism at the wavelength λ;
The second film body having a second refractive index smaller than the first refractive index at the wavelength λ is configured by repeatedly laminating in the film thickness direction,
A Brewster angle with respect to ultraviolet light of the wavelength λ obtained by the polarizing film is set to 50 ° or more;
A polarizing beam splitter.
The optical prism is made of quartz,
The first film body is one of hafnium oxide, zirconium oxide, titanium dioxide, and tantalum pentoxide,
40. The polarizing beam splitter according to claim 39, wherein the second film body is one of silicon dioxide and magnesium fluoride.
A first incident angle with a transmittance of 95% or more for P-polarized light incident on the polarizing film and a reflectance of 5% or less, and a reflection of 95% or more for S-polarized light incident on the polarizing film The first film body and the second film body are repeatedly laminated so that the Brewster angle exists between the first incident angle and the second incident angle at which the transmittance is 5% or less. The polarizing beam splitter according to claim 40.
The polarization beam splitter according to claim 41, wherein a difference between the first incident angle and the second incident angle is 14 ° or more.