TWI683345B - Polarizing beam splitter, exposure device using the polarizing beam splitter, and device manufacturing method - Google Patents

Abstract

A substrate processing apparatus includes: a mask holding cylinder 21 that holds a reflective mask M; a beam splitter PBS, on the one hand, reflects the incident illumination beam EL1 toward the mask M, and on the other hand, the illumination beam EL1 is The projection beam EL2 reflected by the reticle M is transmitted; the illumination optical module ILM causes the illumination beam EL1 to enter the beam splitter PBS; and the projection optical module PLM exposes the projection beam EL2 transmitted through the beam splitter PBS to The substrate P; the illumination optical module ILM and the beam splitter PBS are provided between the reticle M and the projection optical module PLM. In addition, a polarizing beam splitter PBS, which includes: a first film 91, a second film 92, and a polarizing film 93, the polarizing film 93 is a first film body of silicon dioxide and a second film body of hafnium oxide Layered in the thickness direction.

Description

Polarizing beam splitter, exposure device using the polarizing beam splitter, and device manufacturing method

The invention relates to a polarizing beam splitter, a substrate processing device, a device manufacturing system and a device manufacturing method.

Conventionally, as a substrate processing apparatus, an exposure apparatus that irradiates a reflective cylindrical reticle (mask) with exposure light and projects the exposure light reflected from the mask on a photosensitive substrate (wafer) (See, for example, Patent Document 1). The exposure apparatus of Patent Document 1 has a projection optical system that projects the exposure light reflected from the reticle onto the wafer. The projection optical system includes the exposure light in the imaging optical path according to the polarization state of the incident exposure light It is composed of a polarizing beam splitter that is transmitted or reflected.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-227438

In the exposure device of Patent Document 1, the illumination beam from the illumination optics is irradiated obliquely on the cylindrical mask from a direction different from the projection optics, and the exposure light (projection beam) reflected on the mask enters the projection optics . If the illumination optical system and the projection optical system are arranged as shown in Patent Document 1, the utilization efficiency of the illumination light beam is low, and a photomask projected on the photosensitive substrate (wafer) The image quality of the pattern is also poor. As an illumination form that efficiently maintains good image quality, there is a coaxial epi-illumination method. In this method, a light splitting element such as a half mirror or beam splitter is arranged in the imaging optical path formed by the projection optical system, the illumination beam is irradiated to the photomask through the light splitting element, and the projection beam reflected on the photomask is also The transmitted light dividing element leads to the photosensitive substrate.

With the epi-illumination method, when the illumination beam to the reticle is separated from the projection beam from the reticle, by using a polarizing beam splitter as the light splitting element, the light amount loss of the illumination beam and the projection beam can be suppressed The lower the effective exposure.

However, in the case where the illumination beam is reflected (or transmitted) by a polarizing beam splitter, for example, and the projection beam is transmitted (or reflected), since the polarization beam splitter is shared between the illumination optical system and the projection optical system, there is illumination optical The possibility of physically interfering with the projection optics.

In addition, in the case of using a polarizing beam splitter in the exposure apparatus of Patent Document 1, the polarizing film of the polarizing beam splitter reflects a part of the incident light beam that has entered and becomes a reflected light beam, and transmits a part of it into a transmitted light beam. At this time, the reflected light beam or the transmitted light beam is separated to cause energy loss. Therefore, in order to suppress the energy loss of the reflected light beam or the transmitted light beam caused by the separation, the incident light beam entering the polarizing film is preferably made to be laser light having the same wavelength and phase.

However, the energy density of laser light is high. Therefore, when the incident beam is made into laser light, if the reflectance of the reflected beam and the transmittance of the transmitted beam in the polarizing film are low, the energy of the laser light will be absorbed in the polarizing film, and the load imposed on the polarizing film becomes larger. Therefore, when light with high energy density such as laser light is used as the incident light beam, the durability of the polarizing film of the polarizing beam splitter is easily reduced, so it may be difficult to separate the incident light beam properly.

The aspect of the present invention is made in view of the above-mentioned problems, and its object is to provide Even in the case where the illumination beam and the projection beam are separated by the polarizing beam splitter, the physical interference of the illumination optical system and the projection optical system can be suppressed and the polarization beam splitter of the illumination optical system and the projection optical system can be easily configured, Substrate processing apparatus (exposure apparatus), component manufacturing system, and component manufacturing method.

In addition, the aspect of the present invention is made in view of the above-mentioned problems, and its object is to provide an incident light beam having a high energy density, which can reduce the load applied to the polarizing film and reflect a part of the incident light beam to become A polarizing beam splitter, a substrate processing device, a component manufacturing system, and a component manufacturing method that reflect a light beam and transmit a part of the incident light beam to become a transmitted light beam.

According to a first aspect of the present invention, there is provided a substrate processing apparatus (exposure apparatus) comprising: a mask holding member that holds a reflective mask; and a beam splitter, on the one hand, the incident illumination beam is reflected toward the mask On the other hand, the projection beam reflected by the illuminating beam is reflected by the reticle; the illumination optical module causes the illumination beam to enter the beam splitter; and the projection optical module transmits the beam splitter The aforementioned projection light beam is projected on a light-sensitive substrate; the illumination optical system that directs the illumination light beam to the photomask includes the illumination optical module and the beam splitter; the projection optical system that directs the projection light beam to the substrate includes The projection optical module and the beam splitter; the illumination optical module and the beam splitter are provided between the reticle and the projection optical module.

According to a second aspect of the present invention, there is provided a component manufacturing system including: the substrate processing apparatus of the first aspect of the present invention; and a substrate supply apparatus that supplies the substrate to the substrate processing apparatus.

According to a third aspect of the present invention, there is provided a device manufacturing method, including: The operation of projecting and exposing the substrate with the substrate processing apparatus of the first aspect of the present invention; and the operation of forming the pattern of the photomask on the substrate by processing the substrate exposed by projection.

According to a fourth aspect of the present invention, there is provided a substrate processing apparatus (exposure apparatus) comprising: a mask holding member that holds a reflective mask; and a beam splitter that transmits the incident illumination light beam to the mask, And reflecting the illumination beam by the projection beam reflected by the reticle; an illumination optical module that causes the illumination beam to enter the beam splitter; and a projection optical module that reflects the beam splitter The projection light beam is projected on a light-sensitive substrate; the illumination optical system that directs the illumination light beam to the photomask includes the illumination optical module and the beam splitter; the projection optical system that directs the projection light beam to the substrate includes the foregoing The projection optical module and the beam splitter; the illumination optical module and the beam splitter are provided between the reticle and the projection optical module.

According to a fifth aspect of the present invention, there is provided a polarizing beam splitter, comprising: a first 珜鏡; a second 鏜鏡 having a face facing the one of the aforementioned first 鏜鏡; and a polarizing film The incident light beam from the first 稜鏡 to the second 稜鏡 is separated into a reflected light beam reflected toward the first 稜鏡 side or a transmitted light beam transmitted toward the second 稜鏡 side according to the polarization state, and is provided in the aforementioned The first film body composed of silicon dioxide as the main component and the second film body composed of hafnium oxide as the main component are stacked between the opposing surfaces of the first 稜鏡 and the aforementioned second 稜鏡 in the film thickness direction .

According to a sixth aspect of the present invention, there is provided a substrate processing apparatus including: a mask holding member that holds a reflective mask; an illumination optical module that directs an illumination beam to the mask; a projection optical module that directs the aforementioned The projection beam projected by the illumination beam reflected by the aforementioned mask A polarizing beam splitter of the first aspect of the present invention, which is reflected on the object to be projected (substrate); and between the illumination optical module and the photomask and between the photomask and the projection optical module And the wavelength plate; the incident angle of the illumination beam entering the polarizing film of the polarizing beam splitter is a predetermined angle range including a Brewster angle of 52.4° to 57.3°; the polarizing beam splitter is used to direct the illumination beam to the foregoing In a manner in which the photomask transmits and transmits the projection light beam to the projection optical module, the wavelength plate polarizes the illumination light beam from the polarizing beam splitter and further polarizes the projection light beam from the photomask.

According to a seventh aspect of the present invention, there is provided a component manufacturing system comprising: the substrate processing apparatus of the sixth aspect of the present invention; and a substrate supply apparatus that supplies the projected object to the substrate processing apparatus.

According to an eighth aspect of the present invention, there is provided a device manufacturing method comprising: an operation of projecting and exposing the projected object using the substrate processing apparatus of the sixth aspect of the present invention; and the projected exposure by processing the projected exposure To form the pattern of the aforementioned photomask.

According to the aspect of the present invention, it is possible to suppress the physical properties of the illumination optical system and the projection optical system even when the illumination light beam and the projection optical beam are separated by the polarization beam splitter shared by the illumination optical system and the projection optical system A polarization beam splitter, a substrate processing device, a device manufacturing system, and a device manufacturing method that interfere and can easily configure an illumination optical system and a projection optical system.

In addition, according to the aspect of the present invention, it is possible to provide a polarizing beam splitter and a substrate that can reduce the load applied to the polarizing film and reflect a part of the incident beam to become a reflected beam, and transmit a part of the incident beam to become a transmitted beam Processing device, component manufacturing system and component manufacturing method.

1‧‧‧Component manufacturing system

2‧‧‧Substrate supply device

4‧‧‧ substrate recycling device

5‧‧‧Higher control device

11‧‧‧ Mask retention mechanism

12‧‧‧Substrate support mechanism

13‧‧‧Light source device

16‧‧‧lower control device

21‧‧‧Retainer cylinder

25‧‧‧Substrate support cylinder

31‧‧‧Light source

32‧‧‧Light guide member

41‧‧‧1/4 wavelength plate

51‧‧‧collimating lens

52‧‧‧ compound eye lens

53‧‧‧Condenser lens

54‧‧‧Cylinder lens

55‧‧‧Lighting field diaphragm

56a~56d‧‧‧Relay lens

61‧‧‧First Optical Department

62‧‧‧Second optics

63‧‧‧Projection field diaphragm

64‧‧‧focus correction optical component

65‧‧‧Optical components for image shift

66‧‧‧Optical components for magnification correction

67‧‧‧ Rotation correction mechanism

68‧‧‧ Polarization adjustment mechanism

70‧‧‧The first deflection member

71‧‧‧1st lens group

72‧‧‧The first concave mirror

80‧‧‧The second deflection member

81‧‧‧ 2nd lens group

82‧‧‧The second concave mirror

91‧‧‧ No. 1

92‧‧‧ No. 2

93‧‧‧ Polarizing film

110‧‧‧mask stage (second embodiment)

P‧‧‧Substrate

FR1‧‧‧Reel for supply

FR2‧‧‧Recycling roller

U1~Un‧‧‧Processing device

U3‧‧‧Exposure device (substrate processing device)

M‧‧‧mask

MA‧‧‧mask (second embodiment)

AX1‧‧‧1st axis

AX2‧‧‧2nd axis

P1‧‧‧ Mask

P2‧‧‧Support surface

P7‧‧‧ middle image

EL1‧‧‧Illumination beam

EL2‧‧‧Projection beam

Rm‧‧‧ radius of curvature

Rfa‧‧‧ radius of curvature

CL‧‧‧Center

PBS‧‧‧polarizing beam splitter

IR1~IR6‧‧‧ Illuminated area

IL1~IL6‧‧‧ Department of Illumination Optics

ILM‧‧‧Lighting optical module

PA1~PA6‧‧‧Projection area

PL1~PL6‧‧‧Projection optics

PLM‧‧‧Projection optical module

BX1‧‧‧First optical axis

BX2‧‧‧ 2nd optical axis

BX3‧‧‧ Third optical axis

D1‧‧‧The first side

D2‧‧‧The second side

D3‧‧‧The third side

D4‧‧‧Fourth

θ‧‧‧angle

θ 1(β)‧‧‧incidence angle

θ B‧‧‧ Brewster angle

S1‧‧‧non-shot area

S2‧‧‧shot area

H‧‧‧layer

H1‧‧‧The first membrane

H2‧‧‧The second membrane

FIG. 1 is a diagram showing the structure of a component manufacturing system according to the first embodiment.

2 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.

FIG. 3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure device shown in FIG. 2.

4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. 2.

FIG. 5A is a diagram showing the illumination beam and the projection beam in the reticle.

FIG. 5B is a diagram showing the fourth relay lens viewed from the polarizing beam splitter.

6 is a diagram showing the illumination beam and the projection beam in the polarizing beam splitter.

FIG. 7 is a diagram showing an arrangement area where the illumination optics can be arranged.

8 is a diagram showing the structure around the polarizing film of the polarizing beam splitter of the first embodiment.

9 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the comparative example of the first embodiment.

FIG. 10 is a graph showing the transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. 8.

FIG. 11 is a graph showing the transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. 9.

FIG. 12 is a flowchart showing the device manufacturing method of the first embodiment.

13 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a second embodiment.

14 is a diagram showing the configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment.

15 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment.

FIG. 16 is a diagram showing the configuration of an exposure apparatus (substrate processing apparatus) according to the fifth embodiment.

Fig. 17 is a diagram showing the structure around the polarizing film of the polarizing beam splitter of the sixth embodiment.

FIG. 18 is a graph showing the transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. 17.

Fig. 19 is a diagram showing the structure around the polarizing film of the polarizing beam splitter of the seventh embodiment.

FIG. 20 is a graph showing the transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. 19.

Fig. 21 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the eighth embodiment.

22 is a graph showing the transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. 21.

The embodiment (embodiment) for implementing the present invention will be described in detail with reference to the drawings. The contents described in the following embodiments are not intended to limit the present invention. In addition, the constituent elements described below include those that can be easily thought of by those who have ordinary knowledge in the technical field to which the invention belongs and are substantially the same. Furthermore, the constituent elements described below can be combined as appropriate. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the gist of the present invention.

[First Embodiment]

The polarizing beam splitter of the first embodiment is provided in an exposure device as a substrate processing device that performs exposure processing on a photosensitive substrate that is a projection object. In addition, the exposure device is assembled in a device manufacturing system that applies various processes to the exposed substrate to manufacture devices. First, the component manufacturing system will be described.

<Component Manufacturing System>

FIG. 1 is a diagram showing the configuration of the component manufacturing system of the first embodiment. The device manufacturing system 1 shown in FIG. 1 is a production line for manufacturing flexible displays as devices (flexible display production lines). Examples of flexible displays include organic EL displays. This component manufacturing system 1 sends out the substrate P from a supply roller FR1 that winds a flexible substrate P into a reel shape, and after various treatments are continuously applied to the sent substrate P, the processed substrate P is regarded as flexible Sexual component winding The roller FR2 for recycling is a so-called roll-to-roll method. The component manufacturing system 1 of the first embodiment shows that the substrate P, which is a film-like sheet, is fed out from the supply roller FR1, and the substrate P sent out from the supply roller FR1 sequentially passes through n processing devices U1, U2, U3, U4, U5, ...Un until it is taken up by the recycling roller FR2. First, the substrate P to be processed by the component manufacturing system 1 will be described.

The substrate P is, for example, a resin film, a foil made of metal or alloy such as stainless steel, or the like. The material of the resin film includes, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl ester copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, One or more of polystyrene resin and vinyl acetate resin.

Preferably, for example, the substrate P is selected to have a coefficient of thermal expansion that is not significantly larger in such a manner that the amount of deformation caused by the heat applied to the substrate P in various processing steps is substantially negligible. The thermal expansion coefficient can also be set smaller than the threshold value corresponding to the process temperature and the like by mixing an inorganic filler to the resin film, for example. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, or the like. In addition, the substrate P may be a single-layer body of extremely thin glass having a thickness of about 100 μm manufactured by a float method or the like, or a laminate in which the above-mentioned resin film, foil, or the like is bonded to the extremely thin glass.

The substrate P configured as described above becomes a supply roller FR1 by being wound into a reel shape, and this supply roller FR1 is mounted on the component manufacturing system 1. The component manufacturing system 1 mounted with the supply roller FR1 repeatedly executes various processes for manufacturing components on the substrate P sent out from the supply roller FR1. Therefore, the processed substrate P is in a state where a plurality of elements are connected. That is, the substrate P sent out from the supply roller FR1 extracts the substrate for multiple surfaces. In addition, the substrate P also It may be one in which the surface is modified in advance by specific pretreatment to obtain activation, or a fine partition structure (concave-convex structure) useful for precise patterning is formed on the surface.

The processed substrate P is collected as a collection roller FR2 by being wound into a reel. The recovery roller FR2 is attached to a cutting device (not shown). The cutting device equipped with the recovery roller FR2 divides (cuts) the processed substrate P into individual components, and creates a plurality of components. The size of the substrate P is, for example, about 10 cm to 2 m in the width direction (the Y-axis direction of the short side), and 10 m or more in the length direction (the X-axis direction of the long side). In addition, the size of the substrate P is not limited to the above-mentioned size.

Referring to Fig. 1, the description of the component manufacturing system will be continued. In FIG. 1, it is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal. The X direction is a direction connecting the supply roller FR1 and the recovery roller FR2 in a horizontal plane. The Y direction is the direction orthogonal to the X direction in the horizontal plane. The Y direction is the axial direction of the supply roller FR1 and the recovery roller FR2. The Z direction is a direction orthogonal to the X direction and the Y direction (vertical direction).

The component manufacturing system 1 includes a substrate supply device 2 that supplies a substrate P, a processing device U1 to Un that performs various processes on the substrate P supplied by the substrate supply device 2, and a substrate P that is processed by the processing devices U1 to Un. The substrate recovery device 4 and each device upper control device 5 of the control element manufacturing system 1.

The supply roller FR1 is rotatably mounted on the substrate supply device 2. The substrate supply device 2 has a driving roller R1 that feeds the substrate P from the mounted supply roller FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller R1 rotates while gripping both the front and back surfaces of the substrate P, and sends the substrate P in the transport direction from the supply roller FR1 to the recovery roller FR2, thereby supplying the substrate P to the processing devices U1 to Un. At this time, the edge bit The controller EPC1 moves the substrate P in the width direction to correct the position of the substrate P in the width direction so that the position of the end (edge) of the substrate P in the width direction is about ± tens μm to tens μm relative to the target position Scope.

The recovery roller FR2 is rotatably attached to the substrate recovery device 4. The substrate recovery device 4 has a driving roller R2 that draws the processed substrate P to the recovery roller FR2 side, and an edge position controller EPC2 that adjusts the position of the substrate P in the width direction (Y direction). The substrate recovery device 4 rotates the drive roller R2 while gripping both the front and back surfaces of the substrate P, draws the substrate P in the transport direction, and rotates the recovery roller FR2, thereby winding up the substrate P. At this time, the edge position controller EPC2 is configured in the same manner as the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the end (edge) in the width direction of the substrate P is not uneven in the width direction.

The processing device U1 is a coating device that applies a photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid system, a photoresist, a photosensitive silane coupling material, a UV (ultraviolet) curing resin liquid, or the like is used. The processing device U1 is provided with a coating mechanism Gp1 and a drying mechanism Gp2 in this order from the upstream side in the conveyance direction of the substrate P. The coating mechanism Gp1 has an impression roller DR1 wound around the substrate P, and an application roller DR2 opposed to the impression roller DR1. The coating mechanism Gp1 holds the substrate P between the platen roller DR1 and the coating roller DR2 while the supplied substrate P is wound around the platen roller DR1. Next, the coating mechanism Gp1 rotates the platen roller DR1 and the coating roller DR2 to apply the photosensitive functional liquid by the coating roller DR2 while moving the substrate P in the conveying direction. The drying mechanism Gp2 blows drying air such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid, and forms it on the substrate P by drying the substrate P coated with the photosensitive functional liquid Photosensitive functional layer.

The processing device U2 heats the substrate P transferred from the processing device U1 to A heating device that fixes the temperature (for example, around tens of degrees Celsius to 120 degrees Celsius) to stabilize the photosensitive functional layer formed on the surface of the substrate P. The processing device U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the conveyance direction of the substrate P. The heating chamber HA1 is provided with a plurality of rollers and a plurality of air-turn bars (Air-turn Bar) therein, and the plurality of rollers and the plurality of air-turn bars constitute a transport path of the substrate P. A plurality of rollers are provided by rolling on the back of the substrate P, and a plurality of air steering rods are provided on the front side of the substrate P in a non-contact state. The plurality of rollers and the plurality of air deflecting rods are arranged in a meandering conveying path in order to increase the conveying path of the substrate P. The substrate P passing through the heating chamber HA1 is transported along a meandering conveying path while being heated to a predetermined temperature, and the cooling chamber HA2 is used for the temperature and post-processing of the substrate P heated in the heating chamber HA1 (processing device The ambient temperature of U3) is the same, and the substrate P is cooled to the ambient temperature. The cooling chamber HA2 is provided with a plurality of rollers inside, and the plurality of rollers are arranged in a meander-like transport path in order to increase the transport path of the substrate P in the same way as the heating chamber HA1. The substrate P passing through the cooling chamber HA2 is cooled while being transported along the meandering transport path. A driving roller R3 is provided on the downstream side of the cooling chamber HA2 in the conveying direction. The driving roller R3 supplies the substrate P to the processing device U3 by rotating while sandwiching the substrate P passing through the cooling chamber HA2.

The processing device (substrate processing device) U3 is a scanning type exposure device that supplies a pattern (such as a circuit or wiring for exposure display) to a substrate (photosensitive substrate) P having a photosensitive functional layer formed on the surface supplied from the processing device U2. Although the details will be described later, the processing device U3 illuminates the reflective cylindrical mask M with an illumination beam, and projects the illumination beam by the projection beam reflected by the mask M onto the rotatable substrate support tube 25 The substrate P supported on the outer peripheral surface. The processing device U3 has a driving roller R4 that sends the substrate P supplied from the processing device U2 to the downstream side in the conveyance direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). Drive roller R4 rotates while holding the front and back surfaces of the substrate P, and sends the substrate P downstream in the conveying direction, thereby supplying the substrate P to the exposure position. The edge position controller EPC3 has the same configuration as the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position.

In addition, the processing device U3 has two sets of drive rollers R5 and R6 that transfer the substrate P to the downstream side in the conveying direction in a state where the substrate P after exposure is given slack. The two sets of driving rollers R5 and R6 are arranged at a predetermined interval in the conveying direction of the substrate P. The driving roller R5 rotates while sandwiching the upstream side of the substrate P to be transported, and the driving roller R6 rotates while sandwiching the downstream side of the substrate P to be transported, thereby supplying the substrate P to the processing device U4. At this time, since the substrate P is given slack, it is possible to absorb the variation of the conveying speed which is generated downstream of the driving roller R6 in the conveying direction, and it is possible to eliminate the influence of the conveying speed variation on the exposure process of the substrate P. In addition, in the processing device U3, in order to align (align) a part of the image of the mask pattern of the mask M with the substrate P, an alignment microscope AM1 that detects alignment marks and the like formed on the substrate P in advance is provided , AM2.

The processing device U4 is a wet processing device that performs wet development processing, electroless plating processing, and the like on the exposed substrate P transferred from the processing device U3. The processing device U4 has three processing tanks BT1, BT2, BT3 layered in the vertical direction (Z direction) and a plurality of rollers for transporting the substrate P inside. The plurality of rollers are arranged so that the substrate P will sequentially pass through the transport paths inside the three processing tanks BT1, BT2, and BT3. A driving roller R7 is provided on the downstream side of the processing tank BT3 in the conveying direction. The driving roller R7 supplies the substrate P to the processing apparatus U5 by rotating while holding the substrate P passing through the processing tank BT3.

Although the illustration is omitted, the processing device U5 is a drying device that dries the substrate P transferred from the processing device U4. The processing device U5 will be attached to the processed device U4 The moisture content of the substrate P subjected to wet processing is adjusted to a predetermined moisture content. The substrate P dried by the processing device U5 passes through a number of processing devices and is transferred to the processing device Un. Next, after the processing device Un is processed, the substrate P is wound up by the recovery roller FR2 of the substrate recovery device 4.

The upper-level control device 5 systematically controls the substrate supply device 2, the substrate recovery device 4, and a plurality of processing devices U1 to Un. The higher-level control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to transport the substrate P from the substrate supply device 2 to the substrate recovery device 4. In addition, the higher-level control device 5 controls a plurality of processing devices U1 to Un in synchronization with the conveyance of the substrate P to perform various processings on the substrate P.

<Exposure device (substrate processing device)>

Next, the configuration of the exposure device (substrate processing device) as the processing device U3 of the first embodiment will be described with reference to FIGS. 2 to 7. 2 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. FIG. 3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure device shown in FIG. 2. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in FIG. 2. FIG. 5A is a diagram showing the illumination beam and the projection beam in the reticle. FIG. 5B is a diagram showing the fourth relay lens viewed from the polarizing beam splitter. 6 is a diagram showing the illumination beam and the projection beam in the polarizing beam splitter. FIG. 7 is a diagram showing an arrangement area where the illumination optics can be arranged.

The exposure device U3 shown in FIG. 2 is a so-called scanning exposure device, which projects and exposes the image of the mask pattern formed on the outer peripheral surface of the cylindrical mask M to the substrate while transporting the substrate P in the transport direction (scanning direction) P surface. In addition, in FIGS. 2 and 4 to 7, the orthogonal coordinate system orthogonal to the X direction, the Y direction, and the Z direction is the same orthogonal coordinate system as FIG. 1.

First, the mask M used by the exposure device U3 will be described. The mask M is a reflective cylindrical mask using, for example, a metal cylinder. The mask M is formed on an outer peripheral surface (circumferential surface) The cylindrical body has a radius of curvature Rm centered on the first axis AX1 extending in the Y direction and has a certain thickness in the radial direction. The circumferential surface of the mask M is a mask surface P1 on which a predetermined mask pattern is formed. The mask surface P1 includes a high reflection portion that reflects the light beam in a predetermined direction with high efficiency and a reflection suppression portion (or light absorption portion) that does not reflect the light beam in the predetermined direction or reflects in a low efficiency. The mask pattern includes a high reflection portion and The reflection suppressing portion is formed. Since such a mask M is a metal cylindrical body, it can be manufactured inexpensively.

In addition, the mask M may be formed with the whole or part of the pattern for the panel corresponding to one display element, or may be a multi-faceted extraction type with the pattern for the panel corresponding to a plurality of display elements. Moreover, in the mask M, a plurality of patterns for panels may be formed repeatedly in the circumferential direction around the first axis AX1, or a plurality of patterns for small panels may be formed repeatedly in a direction parallel to the first axis AX1. Furthermore, the mask M may also be formed with a pattern for the panel of the first display element and a size different from the pattern for the panel of the second display element of the first display element. The mask M only needs to have a circumferential surface with a radius of curvature Rm centered on the first axis AX1, and is not limited to the shape of the cylindrical body. For example, the mask M may also be an arc-shaped plate with a circumferential surface. In addition, the mask M may also be in a thin plate shape, and the thin plate-shaped mask M is bent and attached to a cylindrical base material or a cylindrical frame so as to have a circumferential surface.

Next, the exposure device U3 shown in FIG. 2 will be described. The exposure device U3 includes the above-mentioned drive rollers R4 to R6, the edge position controller EPC3, and the alignment microscopes AM1 and AM2, as well as a mask holding mechanism 11, a substrate support mechanism 12, an illumination optical system IL, a projection optical system PL,与下位控制装置16。 And lower control device 16. The exposure device U3 guides the illumination light beam EL1 emitted from the light source device 13 with the illumination optical system IL and the projection optical system PL, and projects the image of the mask pattern of the mask M held by the mask holding mechanism 11 onto The substrate P supported by the substrate support mechanism 12.

The lower-level control device 16 controls each part of the exposure device U3 so that each part executes processing. The lower control device 16 may also be part or all of the upper control device 5 of the component manufacturing system 1. In addition, the lower control device 16 may be controlled by the upper control device 5 and may be a different device from the upper control device 5. The lower control device 16 includes, for example, a computer.

The reticle holding mechanism 11 includes a reticle holding cylinder (reticle holding member) 21 that holds the reticle M, and a first drive unit 22 that rotates the reticle holding cylinder 21. The mask holding cylinder 21 holds the mask M so that the first axis AX1 of the mask M is the center of rotation. The first drive unit 22 is connected to the lower control device 16 and rotates the mask holding cylinder 21 with the first axis AX1 as the rotation center.

In addition, although the mask holding mechanism 11 holds the mask M of a cylindrical body with the mask holding cylinder 21, it is not limited to this structure. The mask holding mechanism 11 may wind and hold the thin-plate-shaped mask M along the outer peripheral surface of the mask holding cylinder 21. In addition, the mask holding mechanism 11 may hold the mask M of the arc-shaped plate material on the outer peripheral surface of the mask holding cylinder 21.

The substrate support mechanism 12 includes a substrate support cylinder (substrate support member) 25 that supports the substrate P, a second drive unit 26 that rotates the substrate support cylinder 25, a pair of air turn bars ATB1, ATB2, and A pair of guide rollers 27, 28. The substrate supporting cylinder 25 is formed into a cylindrical shape having an outer peripheral surface (circumferential surface) with a radius of curvature Rfa centered on the second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the surface passing through the first axis AX1 and the second axis AX2 is the center plane CL. A part of the circumferential surface of the substrate supporting cylinder 25 is a supporting surface P2 that supports the substrate P. That is, the substrate supporting cylinder 25 supports the substrate P by winding the substrate P on its supporting surface P2. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support cylinder 25 with the second axis AX2 as the rotation center. A pair of air reversing levers ATB1 and ATB2 are respectively provided upstream of the substrate P in the conveying direction via the substrate support cylinder 25 Side and downstream side. A pair of air reversing levers ATB1 and ATB2 are provided on the surface side of the substrate P, and are provided below the support surface P2 of the substrate support cylinder 25 in the vertical direction (Z direction). The pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side of the substrate P in the conveying direction via a pair of air reversing bars ATB1 and ATB2, respectively. A pair of guide rollers 27 and 28, one of the guide rollers 27 guides the substrate P conveyed from the driving roller R4 to the air reversing lever ATB1, and the other guide roller 28 conveys the substrate from the air reversing lever ATB2 P is guided to the driving roller R5.

As described above, the substrate support mechanism 12 guides the substrate P transferred from the driving roller R4 to the air reversing lever ATB1 by the guide roller 27, and introduces the substrate P passing through the air reversing lever ATB1 into the substrate support cylinder 25. The substrate support mechanism 12 rotates the substrate support cylinder 25 by the second driving unit 26, and the substrate P introduced into the substrate support cylinder 25 is transferred to the air while being supported by the support surface P2 of the substrate support cylinder 25 Rod ATB2. The substrate support mechanism 12 guides the substrate P conveyed to the air reversing lever ATB2 to the guide roller 28 by the air reversing lever ATB2, and guides the substrate P passing through the guide roller 28 to the driving roller R5.

At this time, the lower control device 16 connected to the first drive unit 22 and the second drive unit 26 rotates the mask holding cylinder 21 and the substrate support cylinder 25 synchronously at a predetermined rotation speed ratio, and forms the mask M The image of the mask pattern on the mask surface P1 is continuously exposed to repeated projection exposure on the surface of the substrate P wound on the support surface P2 of the substrate support cylinder 25 (the surface curved along the circumferential surface).

The light source device 13 emits an illumination light beam EL1 that illuminates the mask M. The light source device 13 has a light source 31 and a light guide member 32. The light source 31 emits light of a predetermined wavelength that imparts an optical effect to the photosensitive layer formed on the surface of the substrate P. As the light source 31, a lamp light source such as a mercury lamp, a laser diode, a light emitting diode (LED), or the like can be used. The illumination light emitted by the light source 31 is, for example, a glow line (g line, h line, i line, etc.) emitted from the lamp light source, KrF excimer laser light (wavelength 248 nm) Equal far ultraviolet light (DUV light), ArF excimer laser light (wavelength 193nm), etc. Here, the light source 31 preferably emits an illumination light beam EL1 having a wavelength below i-line (wavelength of 365 nm). As the light source 31 that generates the illumination light beam EL1 with a wavelength below the i-line, a YAG third harmonic laser that emits laser light with a wavelength of 355 nm, a YAG fourth harmonic laser that emits laser light with a wavelength of 266 nm, or an emission wavelength can be used KrF excimer laser of 248nm laser light, etc.

Here, the illumination light beam EL1 emitted from the light source device 13 enters the polarizing beam splitter PBS described later. In order to suppress the energy loss caused by the separation of the illumination beam EL1 by the polarizing beam splitter PBS, it is preferable that the incident illumination beam EL1 can reflect substantially all of the beam reflected by the polarizing beam splitter PBS. The polarizing beam splitter PBS can reflect the linearly polarized light beam of S-polarized light and transmit the linearly polarized light beam of P-polarized light. Therefore, the light source device 13 emits the illumination light beam EL1 that enters the polarization beam splitter PBS into a linearly polarized light (S-polarized light). Therefore, the light source device 13 emits polarized laser light having the same wavelength and phase to the polarizing beam splitter PBS.

The light guide member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guide member 32 is constituted by a relay module using an optical fiber or a mirror. In addition, when a plurality of illumination optical systems IL are provided, the light guide member 32 separates the illumination light beam EL1 from the light source 31 into a plurality of pieces, and then guides the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. In addition, for example, when the light beam emitted from the light source 31 is polarized laser light, the light guide member 32 may use a polarization maintaining fiber (Polarization Maintaining Fiber) as the optical fiber, and guide the polarization maintaining fiber while maintaining the polarization state of the laser light Light.

Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment is a so-called multi-lens exposure apparatus. Also, Figure 3 shows from the -Z side Observe the plan view of the illumination area IR on the reticle M held by the reticle holding cylinder 21 (the left figure in FIG. 3) and the projection area PA on the substrate P supported by the substrate support cylinder 25 from the +Z side Top view (right picture of Figure 3). Symbol Xs in FIG. 3 represents the moving direction (rotation direction) of the reticle holding cylinder 21 and the substrate supporting cylinder 25. The multi-lens exposure device U3 is a plurality of (in the first embodiment, for example, six) illumination regions IR1 to IR6 that illuminate the illumination beams EL1 respectively, and illuminates the illumination beams EL1 in each illumination area IR1 A plurality of projection light beams EL2 reflected by IR6 are projected and exposed to a plurality of (in the first embodiment, for example, 6) projection areas PA1 to PA6 on the substrate P.

First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in FIG. 3, a plurality of illumination regions IR1 to IR6 are arranged in two rows in the rotation direction via the center plane CL, and odd-numbered first illumination regions IR1 and third illumination are arranged on the mask M on the upstream side in the rotation direction In the region IR3 and the fifth illumination region IR5, even-numbered second illumination regions IR2, fourth illumination regions IR4, and sixth illumination regions IR6 are arranged on the mask M on the downstream side in the rotation direction. The illumination regions IR1 to IR6 are elongated trapezoidal (rectangular) regions with parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. At this time, each of the trapezoidal illumination regions IR1 to IR6 is a region where the short side is located on the center plane CL side and the long side is located on the outside. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. In addition, the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are also arranged at predetermined intervals in the axial direction. At this time, the second illumination region IR2 is arranged between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Similarly, the third illumination region IR3 is arranged between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is arranged between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. 5th illuminated area IR5 is arranged between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. The illumination areas IR1 to IR6 are arranged in such a manner that the triangles of the oblique side portions of the adjacent trapezoidal illumination areas overlap with each other as viewed from the circumferential direction of the mask M. In the first embodiment, although the illumination regions IR1 to IR6 are trapezoidal regions, they may be rectangular regions.

In addition, the mask M has a pattern formation area A3 where the mask pattern is formed, and a pattern non-formation area A4 where the mask pattern is not formed. The pattern non-formation area A4 is a non-reflective area that absorbs the illumination light beam EL1 and is arranged to surround the pattern formation area A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged so as to cover the full width in the Y direction of the pattern forming region A3.

The illumination optical system IL system is provided with a plurality of plural illumination regions IR1 to IR6 (in the first embodiment, for example, six). The illumination light beams EL1 from the light source device 13 are respectively incident on the plurality of illumination optical systems IL1~IL6. The illumination optical systems IL1 to IL6 guide the illumination light beams EL1 incident from the light source device 13 to the illumination regions IR1 to IR6, respectively. That is, the first illumination optical system IL1 guides the illumination light beam EL1 to the first illumination area IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination light beam EL1 to the second to sixth illumination area IR2 ~IR6. A plurality of illumination optical systems IL1 to IL6 are arranged in two rows in the circumferential direction of the photomask M with the center plane CL interposed (and sandwiched). A plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third, and fifth illumination regions IR1, IR3, and IR5 are placed via the center plane CL (the left side in FIG. 2), and the first illumination optical systems IL1 and IL3 are arranged. The illumination optical system IL3 and the fifth illumination optical system IL5. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at predetermined intervals in the Y direction. In addition, a plurality of illumination optical systems IL1 to IL6 are arranged on the side where the second, fourth, and sixth illumination regions IR2, IR4, and IR6 are arranged via the center plane CL (the right side in FIG. 2), and the second illumination optical systems IL2, The fourth illumination optical system IL4 and the sixth illumination optical system IL6. The second illumination optics IL2, the fourth illumination optics The system IL4 and the sixth illumination optical system IL6 are arranged at predetermined intervals in the Y direction. At this time, the second illumination optical system IL2 is arranged between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3 is arranged between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction. The fourth illumination optical system IL4 is arranged between the third illumination optical system IL3 and the fifth illumination optical system IL5 in the axial direction. The fifth illumination optical system IL5 is arranged between the fourth illumination optical system IL4 and the sixth illumination optical system IL6 in the axial direction. Furthermore, the first illumination optical system IL1, the third illumination optical system IL3, the fifth illumination optical system IL5 and the second illumination optical system IL2, the fourth illumination optical system IL4 and the sixth illumination optical system IL6, viewed from the Y direction, Symmetrically arranged with the center plane CL as the center.

Next, the illumination optical systems IL1 to IL6 will be described with reference to FIG. 4. In addition, since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter, simply referred to as the illumination optical system IL) will be described as an example.

In the illumination optical system IL, in order to illuminate the illumination light beam EL1 of the illumination area IR (first illumination area IR1) into a uniform illuminance distribution, the Kohler illumination method is applied. The illumination optical system IL includes an illumination optical module ILM, a polarizing beam splitter PBS, and a quarter-wave plate 41 in order from the incident side of the illumination light beam EL1 from the light source device 13.

As shown in FIG. 4, the illumination optical module ILM includes a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, a cylindrical lens 54, and an illumination field diaphragm in order from the incident side of the illumination light beam EL1 55, and a plurality of relay lenses 56 are provided on the first optical axis BX1. The collimator lens 51 is provided on the exit side of the light guide member 32 of the light source device 13. The optical axis of the collimator lens 51 is arranged on the first optical axis BX. The collimator lens 51 illuminates the entire entrance side of the fly-eye lens 52. The fly-eye lens 52 is provided on the exit side of the collimator lens 51. The center of the surface on the exit side of the compound eye lens 52 On the first optical axis BX1. The fly-eye lens 52 divides the illumination light beam EL1 from the collimator lens 51 into light beams diverging from each of a plurality of point light source images. At this time, the surface on the exit side of the compound eye lens 52 that generates the point light source image is arranged to be in contact with the first concave mirror by various lenses from the compound eye lens 52 through the illumination field diaphragm 55 to the first concave mirror 72 of the projection optical system PL described later. The pupil plane where the reflecting surface of 72 is located is optically conjugated.

The condenser lens 53 is provided on the emission side of the fly-eye lens 52. The optical axis of the condenser lens 53 is arranged on the first optical axis BX1. The condenser lens 53 transmits each of the illumination light beams divided by the fly-eye lens 52 through the cylindrical lens 54 and overlaps the illumination field diaphragm 55. As a result, the illumination light beam EL1 has a uniform illuminance distribution on the illumination field diaphragm 55. The cylindrical lens 54 is a plano-convex cylindrical lens with a plane on the entrance side and a convex surface on the exit side. The cylindrical lens 54 is provided on the exit side of the condenser lens 53. The optical axis of the cylindrical lens 54 is arranged on the first optical axis BX1.

The cylindrical lens 54 causes the chief ray of the illumination light beam EL1 to converge in the direction orthogonal to the first optical axis BX1 in the XZ plane in FIG. 4. The cylindrical lens 54 is provided adjacent to the emission side of the illumination field diaphragm 55. The opening of the illumination field diaphragm 55 is formed into a trapezoid or a rectangle having the same shape as the illumination region IR, and the center of the opening of the illumination field diaphragm 55 is arranged on the first optical axis BX1. At this time, the illumination field stop 55 is arranged on a surface optically conjugate to the illumination region IR on the mask M by various lenses from the illumination field stop 55 to the mask M. The relay lens 56 is provided on the emission side of the illumination field diaphragm 55. The optical axis of the relay lens 56 is arranged on the first optical axis BX1. The relay lens 56 causes the illumination light beam EL1 from the illumination field diaphragm 55 to enter the polarization beam splitter PBS.

When the illuminating light beam EL1 enters the illuminating optical module ILM, the illuminating light beam EL1 becomes a full beam irradiated on the incident side of the compound eye lens 52 by the collimator lens 51. The illumination light beam EL1 entering the fly-eye lens 52 becomes the illumination light beam EL1 divided into a plurality of point light source images, and transmits The condenser lens 53 enters the cylindrical lens 54. The illumination light beam EL1 incident on the cylindrical lens 54 converges in a direction orthogonal to the first optical axis BX1 in the XZ plane. The illumination light beam EL1 passing through the cylindrical lens 54 enters the illumination field diaphragm 55. The illumination light beam EL1 that enters the illumination field diaphragm 55 passes through the opening of the illumination field diaphragm 55 (a trapezoid or a rectangle such as a rectangle) and enters the polarization beam splitter PBS through the relay lens 56.

The polarizing beam splitter PBS is arranged between the illumination optical module ILM and the center plane CL. The polarizing beam splitter PBS reflects the illumination beam EL1 from the illumination optical module ILM, and on the other hand, transmits the projection beam EL2 reflected by the mask M. That is, by using the illumination beam EL1 from the illumination optical module ILM as linear polarization of S-polarized light, the projection beam EL2 incident on the polarizing beam splitter PBS becomes P-polarized by the 1/4 wavelength plate 41 Linearly polarize and transmit the polarizing beam splitter PBS.

In addition, although the detailed configuration of the polarizing beam splitter PBS will be described later, as shown in FIG. 6, the polarizing beam splitter PBS has the first 稜鏡91, the second 稜鏡92, and the first 訜鏡91 and the first 2 Polarizing film (wavefront dividing surface) 93 between 稜鏡92. The first 稜鏡91 and the second 稜鏡92 are made of quartz glass, and in the XZ plane is a triangular prism. The polarizing beam splitter PBS is formed by joining the polarizing film 93 between the first prism 91 and the second prism 92 of the triangle to form a quadrangle in the XZ plane.

The first 稜鏡91 is the illuminating light beam EL1 and the projection light beam EL2 on the side. The second 稜鏡92 is the 珜鏡 on the exit side of the projection beam EL2 transmitted through the polarizing film 93. The polarizing film 93 enters the illumination beam EL1 from the first 黜鏡91 toward the second 騜鏡92. The polarizing film 93 reflects the illumination light beam EL1 of S polarized light (linear polarized light), and transmits the projection light beam EL2 of P polarized light (linear polarized light).

The polarizing beam splitter PBS reflects most of the illumination beam EL1 that reaches the polarizing film (wavefront dividing plane) 93, and makes most of the projection beam EL2 transmit better. Although the polarization separation characteristic of the wavefront splitting surface of the polarizing beam splitter PBS is expressed by the extinction ratio, since the extinction ratio will also change due to the incident angle of the light rays directed toward the wavefront splitting surface, the characteristics of the wavefront splitting surface are also After considering the NA (Numerical Aperture) of the illumination beam EL1 or the projection beam EL2, the effect on the practical imaging performance will not be a problem.

The 1/4 wavelength plate 41 is arranged between the polarizing beam splitter PBS and the mask M. The 1/4 wavelength plate 41 converts the illumination light beam EL1 reflected by the polarizing beam splitter PBS from linearly polarized light (S-polarized light) to circularly polarized light. The light reflected by the reticle M (circularly polarized light) by the illumination beam EL1 of circularly polarized light is converted into the projection beam EL2 of P-polarized light (linearly polarized light) by the 1/4 wavelength plate 41.

FIG. 5A is a diagram in which the states of the illumination light beam EL1 of the illumination area IR irradiated on the mask M and the projection light beam EL2 reflected in the illumination area IR are exaggerated and displayed on the XZ plane (plane perpendicular to the first axis AX1). As shown in FIG. 5A, the above-mentioned illumination optical system IL illuminates the illumination area IR of the reticle M in such a manner that the chief ray of the projection beam EL2 reflected in the illumination area IR of the reticle M becomes telecentric (parallel system). The chief ray of the light beam EL1 intentionally becomes a non-telecentric state in the XZ plane (plane perpendicular to the first axis AX1), and becomes a telecentric state in the YZ plane (parallel to the center plane CL). The above characteristics of the illumination light beam EL1 are imparted by the cylindrical lens 54 shown in FIG. Specifically, when the point Q1 passing through the center Q1 of the circumferential direction of the illumination area IR on the mask surface P1 has been set to the intersection point Q2 of the circle toward the first axis AX1 and the circle 1/2 of the radius Rm of the mask surface P1, The curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set such that each principal ray of the illumination light beam EL1 passing through the illumination area IR will face the intersection point Q2 on the XZ plane. In this way, each principal ray of the projection light beam EL2 reflected in the illumination area IR becomes and passes the first axis in the XZ plane The state where the straight line of AX1, point Q1, intersection point Q2 is parallel (telecentric).

Next, a plurality of projection areas PA1 to PA6 exposed by projection with the projection optical system PL will be described. As shown in FIG. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to the plurality of illumination areas IR1 to IR6 on the mask M. That is to say, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in two rows in the conveyance direction via the center plane CL, and odd-numbered first projection areas PA1 and third projections are arranged on the substrate P on the upstream side in the conveyance direction In the area PA3 and the fifth projection area PA5, even-numbered second projection areas PA2, fourth projection areas PA4, and sixth projection areas PA6 are arranged on the substrate P on the downstream side in the conveyance direction. Each of the projection areas PA1 to PA6 has an elongated trapezoidal (rectangular) area extending on the short side and long side of the width direction (Y direction) of the substrate P. At this time, each projection area PA1 to PA6 of the trapezoid is an area where the short side is located on the side of the center plane CL and the long side is located on the outside. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at predetermined intervals in the width direction. In addition, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are also arranged at predetermined intervals in the width direction. At this time, the second projection area PA2 is arranged between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is arranged between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is arranged between the third projection area PA3 and the fifth projection area PA5. The fifth projection area PA5 is arranged between the fourth projection area PA4 and the sixth projection area PA6. The projection areas PA1 to PA6 are the same as the illumination areas IR1 to IR6, and are arranged in such a manner that the triangles of the oblique sides of the adjacent trapezoidal projection areas PA are overlapped when viewed from the transport direction of the substrate P. At this time, the projection area PA has an exposure amount in the overlapping area of the adjacent projection area PA and the exposure amount in the non-overlapping area have substantially the same shape. The first to sixth projection areas PA1 to PA6 are configured to cover the exposure area A7 exposed on the substrate P Full width in Y direction.

Here, in FIG. 2, when viewed in the XZ plane, the circumference from the center point of the illumination area IR1 (and IR3, IR5) on the reticle M to the center point of the illumination area IR2 (and IR4, IR6) is set to The circumference from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) is substantially equal.

The projection optical system PL is provided with a plurality of projection areas PA1 to PA6 (for example, six in the first embodiment). In the plurality of projection optical systems PL1 to PL6, the plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 enter respectively. The projection optical systems PL1 to PL6 guide the projection light beams EL2 reflected by the mask M to the projection areas PA1 to PA6, respectively. In other words, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination area IR1 to the first projection area PA1. Similarly, the second to sixth projection optical systems PL2 to PL6 will come from the second to sixth The projection light beams EL2 of the illumination regions IR2 to IR6 are guided to the second to sixth projection regions PA2 to PA6. A plurality of projection optical systems PL1 to PL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed. A plurality of projection optical systems PL1 to PL6 sandwich the center plane CL, and the first projection optical system PL1 and the third projection are arranged on the side (left side in FIG. 2) where the first, third, and fifth projection areas PA1, PA3, and PA5 are arranged. The optical system PL3 and the fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at predetermined intervals in the Y direction. In addition, a plurality of illumination optical systems IL1 to IL6 sandwich the center plane CL, and the second projection optical system PL2, the second projection optical system PL2, and the second projection optical system PL2 are placed on the side where the second, fourth, and sixth projection areas PA2, PA4, and PA6 are arranged (right side in FIG. 2). 4 The projection optical system PL4 and the sixth projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at predetermined intervals in the Y direction. At this time, the second projection optical system PL2 is arranged in the axial direction between the first projection optical system PL1 and the third Between the projection optics PL3. Similarly, the third projection optical system PL3 is arranged between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction. The fourth projection optical system PL4 is disposed between the third projection optical system PL3 and the fifth projection optical system PL5. The fifth projection optical system PL5 is disposed between the fourth projection optical system PL4 and the sixth projection optical system PL6. Moreover, the first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 and the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6, viewed from the Y direction, Symmetrically arranged with the center plane CL as the center.

Further, each projection optical system PL1 to PL6 will be described with reference to FIG. 4. In addition, since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter, simply referred to as the projection optical system PL) will be described as an example.

The projection optical system PL projects the image of the mask pattern of the illumination region IR (first illumination region IR1) on the mask M on the projection region PA on the substrate P. The projection optical system PL has the 1/4 wavelength plate 41, the polarization beam splitter PBS, and the projection optical module PLM in this order from the incident side of the projection beam EL2 from the mask M.

The 1/4 wavelength plate 41 and the polarization beam splitter PBS are used in combination with the illumination optics IL. In other words, the illumination optical system IL and the projection optical system PL share the quarter-wave plate 41 and the polarizing beam splitter PBS.

As illustrated in FIG. 5A, the projection light beam EL2 reflected in the illumination region IR becomes a telecentric light beam (in a state where the principal light rays are parallel to each other) and enters the projection optical system PL. The projected light beam EL2 reflected in the illumination area IR and converted into circularly polarized light is converted from circularly polarized light to linearly polarized light (P-polarized light) by the 1/4 wavelength plate 41, and then enters the polarizing beam splitter PBS. The projection light beam EL2 incident on the polarizing beam splitter PBS transmits the polarizing beam splitter PBS and then enters the projection optical module PLM.

The projection optical module PLM corresponds to the illumination optical module ILM. That is, the first projection optical system PL1 projects the image of the mask pattern of the first illumination region IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 on the first projection area PA1 on the substrate P. Similarly, the second to sixth projection optical systems PL2 to PL6 are to be masked by the second to sixth illumination regions IR2 to IR6 of the second to sixth illumination optics IL2 to IL6 illumination optical modules ILM The image is projected on the second to sixth projection areas PA2 to PA6 on the substrate P.

As shown in FIG. 4, the projection optical module PLM includes a first optical system 61 that images the mask pattern of the illumination area IR on the intermediate image plane P7, and at least the intermediate image that is imaged by the first optical system 61 A part of it is re-imaged on the second optical system 62 of the projection area PA of the substrate P and the projection field diaphragm 63 disposed on the intermediate image plane P7 forming the intermediate image. In addition, the projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism (polarization adjustment means) 68.

The first optical system 61 and the second optical system 62 are, for example, telecentric catadioptric optical systems in which a Dyson system is deformed. In the first optical system 61, the optical axis (hereinafter, referred to as the second optical axis BX2) is substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflection member 70, a first lens group 71, and a first concave mirror 72. The first deflection member 70 is a triangular prism having a first reflecting surface P3 and a second reflecting surface P4. The first reflection surface P3 is a surface that reflects the projection light beam EL2 from the polarizing beam splitter PBS and makes the reflected projection light beam EL2 pass through the first lens group 71 and enter the first concave mirror 72. The second reflection surface P4 is a surface that projects the projection light beam EL2 reflected by the first concave mirror 72 through the first lens group 71 and reflects the incident projection light beam EL2 toward the projection field diaphragm 63. The first lens group 71 includes various lenses, and the optical axes of the various lenses are arranged on the second optical axis BX2. The first concave mirror 72 is disposed on the pupil plane of the first optical system 61, and is set to The multiple point light source images generated by the fly-eye lens 52 are optically conjugate.

The projection light beam EL2 from the polarizing beam splitter PBS is reflected on the first reflecting surface P3 of the first deflecting member 70, passes through the field of view of the upper half of the first lens group 71, and enters the first concave mirror 72. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72 and passes through the field of view of the lower half of the first lens group 71 to enter the second reflective surface P4 of the first deflection member 70. The projection light beam EL2 incident on the second reflection surface P4 is reflected on the second reflection surface P4, and enters the projection field diaphragm 63 through the focus correction optical member 64 and the image shift optical member 65.

The projection field diaphragm 63 has an opening that defines the shape of the projection area PA. That is, the opening shape of the projection field diaphragm 63 defines the shape of the projection area PA.

The second optical system 62 has the same configuration as the first optical system 61, and is symmetrical to the first optical system 61 via the intermediate image plane P7. The second optical system 62 has an optical axis (hereinafter, referred to as a third optical axis BX3) that is substantially orthogonal to the center plane CL and parallel to the second optical axis BX2. The second optical system 62 includes a second deflection member 80, a second lens group 81, and a second concave mirror 82. The second deflection member 80 has a third reflection surface P5 and a fourth reflection surface P6. The third reflection surface P5 is a surface that reflects the projection light beam EL2 from the projection field diaphragm 63 and makes the reflected projection light beam EL2 pass through the second lens group 81 and enter the second concave mirror 82. The fourth reflection surface P6 is a surface that projects the projection light beam EL2 reflected by the second concave mirror 82 through the second lens group 81 and reflects the incident projection light beam EL2 toward the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are arranged on the third optical axis BX3. The second concave mirror 82 is disposed on the pupil plane of the second optical system 62, and is set to be optically conjugate to a plurality of point light source images formed on the first concave mirror 72.

The projection light beam EL2 from the projection field diaphragm 63 is reflected on the third reflection surface P5 of the second deflection member 80 and enters the second through the field of view area on the upper half of the second lens group 81 Concave mirror 82. The projection light beam EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82, passes through the field of view of the lower half of the second lens group 81, and enters the fourth reflecting surface P6 of the second deflection member 80. The projection light beam EL2 incident on the fourth reflection surface P6 is reflected on the fourth reflection surface P6 and enters the projection area PA through the magnification correction optical member 66. As a result, the image of the mask pattern in the illumination area IR is projected on the projection area PA at an equal magnification (×1).

The focus correction optical member 64 is arranged between the first deflection member 70 and the projection field diaphragm 63. The focus correction optical member 64 adjusts the focus state of the mask pattern image projected on the substrate P. The focus correction optical member 64 is formed by, for example, overlapping two pieces of wedge-shaped prisms upside down (inverted in the X direction in FIG. 4) to form a transparent parallel flat plate as a whole. Sliding this pair of prisms into the direction of the inclined plane without changing the distance between the opposing faces can change the thickness of the parallel flat plate. Accordingly, the effective optical path length of the first optical system 61 can be fine-tuned, and the focus state of the mask pattern image formed on the intermediate image plane P7 and the projection area PA can be fine-tuned.

The optical member 65 for image shift is disposed between the first deflecting member 70 and the projection field diaphragm 63. The optical member 65 for image shift can adjust the image of the mask pattern projected on the substrate P to move in the image plane. The optical member 65 for image shift is composed of transparent parallel flat glass tiltable in the XZ plane of FIG. 4 and transparent parallel flat glass tiltable in the YZ plane of FIG. 4. By adjusting the inclination of the two parallel plate glasses, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

The magnification correction optical member 66 is arranged between the second deflection member 80 and the substrate P. The magnification correction optical member 66 is constituted, for example, by arranging three pieces of a concave lens, a convex lens, and a concave lens coaxially at a predetermined interval, the front and rear concave lenses are fixed, and the convex lens between them can move in the direction of the optical axis (principal light). Accordingly, the image of the mask pattern formed in the projection area PA, That is, while maintaining the telecentric imaging state, it can be zoomed in or out slightly in the same direction. In addition, the optical axes of the three lens groups constituting the magnification correction optical member 66 are inclined in the XZ plane and parallel to the chief ray of the projection light beam EL2.

The rotation correction mechanism 67 is, for example, an actuator (not shown) that slightly rotates the first deflection member 70 about an axis parallel to the Z axis. By rotating the first deflection member 70, the rotation correction mechanism 67 can slightly rotate the image of the mask pattern formed on the intermediate image plane P7 in the intermediate image plane P7.

The polarization adjustment mechanism 68 is, for example, an actuator (not shown) that rotates the 1/4 wavelength plate 41 around an axis orthogonal to the plate surface to adjust the polarization direction. The polarization adjustment mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the 1/4 wavelength plate 41.

In the projection optical system PL configured in this way, the projection light beam EL2 from the mask M is emitted from the illumination area IR to the normal direction of the mask surface P1, and enters through the 1/4 wavelength plate 41 and the polarizing beam splitter PBS The first optical system 61. The projection light beam EL2 incident on the first optical system 61 is reflected on the first reflecting surface (planar mirror) P3 of the first deflection member 70 of the first optical system 61, and is reflected by the first concave mirror 72 through the first lens group 71. The projection light beam EL2 reflected on the first concave mirror 72 passes through the first lens group 71 again and is reflected on the second reflection surface (plane mirror) P4 of the first deflection member 70, and the transmission focus correction optical member 64 and the image shift optical member 65射入projection field diaphragm 63. The projection light beam EL2 passing through the projection field diaphragm 63 is reflected on the third reflection surface (plane mirror) P5 of the second deflection member 80 of the second optical system 62, and is reflected on the second concave mirror 82 by the second lens group 81. The projection light beam EL2 reflected on the second concave mirror 82 passes through the second lens group 81 again and is reflected on the fourth reflecting surface (plane mirror) P6 of the second deflection member 80, and enters the optical member for magnification correction 66. The projection light beam EL2 emitted from the magnification correction optical member 66 enters the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination area IR is projected on the projection area PA at an equal magnification (×1).

In the present embodiment, the second reflecting surface (plane mirror) P4 of the first deflecting member 70 and the third reflecting surface (plane mirror) P5 of the second deflecting member 80 are inclined 45 relative to the center plane CL (or optical axes BX2, BX3) ° surface, but the first reflecting surface (plane mirror) P3 of the first deflection member 70 and the fourth reflecting surface (plane mirror) P6 of the second deflection member 80 are inclined at 45° relative to the central plane CL (or optical axis BX2, BX3) Other angles. The angle α° (absolute value) of the first reflecting surface P3 of the first deflection member 70 with respect to the center plane CL (or optical axis BX2), when the point Q1, the intersection point Q2, and the straight line passing through the first axis AX1 in FIG. When the angle formed by the center plane CL is set to θ°, the relationship is determined to be α°=45°+θ°/2. Similarly, the angle β° (absolute value) of the fourth reflecting surface P6 of the second deflection member 80 with respect to the central surface CL (or optical axis BX2) will pass through the projection area PA in the circumferential direction of the outer peripheral surface of the substrate supporting cylinder 25 When the angle between the chief ray of the projected light beam EL2 at the center point and the center plane CL in the ZX plane is set to ε°, the relationship is determined to be β°=45°+ε°/2.

<Structure of Illumination Optical System and Projection Optical System>

Furthermore, the configuration of the illumination optical system IL and the projection optical system PL of the exposure device U3 of the first embodiment will be described in detail with reference to FIGS. 4, 6 and 7.

As described above, the illumination optical system IL shown in FIG. 4 has the illumination optical module ILM, the projection optical system PL has the projection optical module PLM, and the illumination optical system IL and the projection optical system PL share the polarization beam splitter PBS and 1/4 Wavelength plate 41. The illumination optical module ILM and the polarizing beam splitter PBS are provided between the reticle M and the projection optical module PLM in the direction (Z direction) in which the center plane CL extends. Specifically, the polarizing beam splitter PBS is provided on the reticle M and the projection optical module in the Z direction The first lens group 71 of the PLM is provided between the center plane CL and the illumination optical module ILM in the X direction. In addition, the illumination optical module ILM is provided between the reticle M and the first lens group 71 of the projection optical module PLM in the Z direction, and is provided on the opposite side of the center plane CL side with the polarizing beam splitter PBS in the X direction .

Here, the arrangement area E where the illumination optical module ILM can be arranged will be described with reference to FIG. 7. The arrangement area E in the XZ plane is an area defined by the first line L1, the second line L2, and the third line L3. The second line L2 is the chief ray of the projection light beam EL2 reflected by the mask M (through, for example, point Q1 in FIG. 5A). The first line L1 is the wiring (junction surface) of the mask surface P1 at the intersection (for example, point Q1 in FIG. 5A) where the chief ray of the projection light beam EL2 reflected by the mask M and the mask surface P1 intersect. The third line L3 is set to be a line parallel to the second optical axis BX2 of the first optical system 61 so as not to spatially interfere with the projection optical module PLM. The illumination optical module ILM is arranged in the arrangement area E surrounded by the first line L1, the second line L2, and the third line L3. In the case where the mask M is a cylinder, as shown in FIG. 7, the first line L1 can be inclined so that the distance between the third line L3 and the first line L1 in the Z direction increases as the distance from the center plane CL increases. . Therefore, the installation of the illumination optical module ILM becomes easy.

In addition, the illumination optical module ILM may also specify its arrangement according to the incident angle β of the chief ray of the illumination light beam EL1 that enters the polarizing film 93 of the polarizing beam splitter PBS from the illumination optical module ILM. As shown in FIG. 6, let the angle formed by the chief ray of the projection light beam EL2 reflected by the illumination region IR (through, for example, point Q1 in FIG. 5A) and the center plane CL be θ. At this time, the illumination optical module ILM is configured such that the incident angle β of the chief ray of the illumination light beam EL1 that enters the polarizing film 93 of the polarizing beam splitter PBS (which will be described as θ 1 in the following description) will be 45°×0.8 Within ≦β≦(45°+θ/2)×1.2. That is, the angle range of the incident angle β is a suitable one for the polarizing beam splitter PBS The incident angle β of the polarizing film 93 allows the illumination light beam EL1 to enter, and the range of the illumination optical module ILM can be configured in a manner that does not physically interfere with the reticle M and the projection optical module PLM. In addition, although the angle range of the incident angle β is also determined by considering the angular distribution determined by the numerical aperture (NA) of the illumination beam EL1, 45°≦β≦(45°+θ/2) is preferable. Moreover, the most appropriate incident angle β is to make the illumination light beam EL1 enter the polarization beam splitter PBS in a state where the first optical axis BX1 of the illumination optical module ILM is parallel to the second optical axis BX2 of the projection optical module PLM The incident angle of the polarizing film 93.

The polarizing beam splitter PBS is composed of two triangular prisms (for example, made of quartz) 91 and 92 joined via a polarizing film 93. The entrance surface of the 稜鏡91, into which the illumination light beam EL1 from the illumination optical module ILM enters, is set to be perpendicular to the first optical axis BX1 of the illumination optical module ILM, and the plane where the illumination light beam EL1 exits toward the mask M is set to It is perpendicular to the chief ray of the illumination light beam EL1 (for example, the line connecting the point Q1 in FIG. 5A and the rotation center axis AX1). In addition, the projection surface EL2 of the projection beam EL2 from the mask M is transmitted through the projection 91 and the polarizing film 93 to the projection optical module PLM. The exit surface of the projection 92 is also set to be the chief ray of the projection beam EL2 (e.g. Point Q1 is perpendicular to the line of rotation center axis AX1). Therefore, the polarizing beam splitter PBS is an optical parallel plate with a certain thickness relative to the projection beam EL2 having a telecentric chief ray.

As shown in FIG. 4, the illumination optical module ILM is likely to physically interfere with the projection optical module PLM on the side of the polarizing beam splitter PBS, so the various lenses (the first lens) included in the illumination optical module ILM are cut off Part. In addition, in the first embodiment, the case where various lenses of the illumination optical module ILM are cut off has been described, but it is not limited to this configuration. That is, since the projection optical module PLM is also likely to physically interfere with the illumination optical module ILM on the polarizing beam splitter PBS side, it is also possible to cut a part of various lenses (second lens) included in the projection optical module PLM . Therefore, it is also possible to cut off each of the components contained in both the illumination optical module ILM and the projection optical module PLM Part of a kind of lens. However, generally speaking, since the illumination optical module ILM is required to have lower optical precision than the projection optical module PLM, it is simpler and more convenient to cut off a part of various lenses (first lens) included in the illumination optical module ILM. ideal.

In the illumination optical module ILM, a part of the plurality of relay lenses 56 provided on the side of the polarizing beam splitter PBS is cut off. The plurality of relay lenses 56 are, in order from the incident side of the illumination light beam EL1, a first relay lens 56a, a second relay lens 56b, a third relay lens 56c, and a fourth relay lens 56d. The fourth relay lens 56d is provided adjacent to the polarizing beam splitter PBS. The third relay lens 56c is provided adjacent to the fourth relay lens 56d. The second relay lens 56b is provided at a predetermined interval from the third relay lens 56c, and the distance between the second relay lens 56b and the third relay lens 56c is higher than that of the second relay lens 56b and the first relay lens 56a Between long. The first relay lens 56a is provided adjacent to the second relay lens 56b. The first relay lens 56a and the second relay lens 56b on the far side of the polarizing beam splitter PBS are formed in a circle centered on the optical axis. On the other hand, the third relay lens 56c and the fourth relay lens 56d closer to the polarizing beam splitter PBS have a shape in which a part of a circle is cut off.

After the illumination light beam EL1 enters the third relay lens 56c and the fourth relay lens 56d, the third relay lens 56c and the fourth relay lens 56d form the incident area S2 into which the illumination light beam EL1 enters and the illumination light beam EL1 Non-injected non-injected area S1. The third relay lens 56c and the fourth relay lens 56d are formed by cutting a part of the circle by cutting a part of the non-incident area S1. Specifically, the third relay lens 56c and the fourth relay lens 56d are formed by cutting both sides in the XZ plane orthogonal to the orthogonal direction of the first optical axis BX1 on the plane perpendicular to the orthogonal direction shape. Therefore, when viewed from the first optical axis BX1, the third relay lens 56c and the fourth relay lens 56d have a shape including a substantially elliptical shape, a substantially oblong shape, and a substantially small shape.

Here, referring to FIG. 5B, the first closest to the polarizing beam splitter PBS in FIG. 4 will be described. 4 An example of the shape of a relay lens 56d. 5B is a view of the fourth relay lens 56d viewed from the polarizing beam splitter PBS side, there is an incident area S2 through which the illumination light beam EL1 passes, and there is a non-incidence area S1 up and down in the Z direction where the illumination light beam EL1 does not pass. The fourth relay lens 56d is formed by cutting out a portion corresponding to the non-incident area S1 after manufacturing a circular lens of a predetermined diameter.

The diameter of the circular lens is determined according to the size of the illumination area IR on the mask M, the working distance, the numerical aperture (NA) of the illumination beam EL1, and the degree of non-telecentricity of the chief ray of the illumination beam EL1 illustrated in FIG. 5A . In FIG. 5B, attention is paid to the four corners of the illumination region IR (here, the Y direction centered on the point Q1 where the optical axis BX1 passes) as the long side rectangle. Assuming that one of the four corners is FFa, the point FFa in the illumination region IR is irradiated by the partial circular illumination beam EL1a of the illumination beam EL1 passing through the fourth relay lens 56d. The size of the circular distribution of the partial illumination beam EL1a on the fourth relay lens 56d is determined by the working distance (focus distance) or the numerical aperture (NA) of the illumination beam EL1.

Also, as explained with reference to FIG. 5A, each principal ray of the illumination beam EL1 on the mask M is non-telecentric in the XZ plane, so the main part of the illumination beam EL1a that passes through the point FFa on the mask M The light rays are shifted by a certain amount in the Z direction on the fourth relay lens 56d. In this way, all the light beams illuminating the four corners (and on the outer edge) of the illumination area IR on the fourth relay lens 56d are all superimposed on the fourth relay lens 56d. The illumination light beam EL1 entering the area S2. Therefore, as long as the distribution (diffusion) of the illuminating light beam EL1 on the fourth relay lens 56d is added to the non-telecentric state of the illuminating light beam EL1 in the XZ plane, it can be obtained to cover the incident area S2 (the illuminating light beam EL1 The shape and size of the fourth relay lens 56d may be determined by the size of the distribution area.

Similar to the fourth relay lens 56d, the other lens 56c in FIG. 4 or transparent The mirrors 56a and 56b can also determine the shape and size of the lens in such a manner as to cover the size of the distribution area of the actual illumination light beam EL1.

Generally speaking, although a high-precision lens with power (refractive power) is manufactured by grinding the surface of a round glass material such as optical glass or quartz, it can also be prepared from the beginning with an injection equivalent to that determined by, for example, FIG. The size of the area S2 is approximately small, approximately elliptical, approximately oblong, or approximately rectangular glass material, and the surface thereof is polished to form a desired lens surface. In this case, there is no need to cut the part corresponding to the non-incident area S1.

<Polarizing beam splitter>

Next, the configuration of the polarizing beam splitter PBS provided in the exposure apparatus U3 of the first embodiment will be described with reference to FIGS. 6 and 8 to 11. 8 is a diagram showing the structure around the polarizing film of the polarizing beam splitter of the first embodiment. 9 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the comparative example of the first embodiment. FIG. 10 is a graph showing the transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. 8. FIG. 11 is a graph showing the transmission characteristics and reflection characteristics of the polarizing beam splitter shown in FIG. 9.

As shown in FIG. 6, the polarizing beam splitter PBS has a first beam 91, a second beam 92, and a polarizing film 93 provided between the first beam 91 and the second beam 92. The first 稜鏡91 and the second 稜鏡92 are made of quartz glass, and in the XZ plane are triangular prisms of different triangular shapes. The polarizing beam splitter PBS is formed by joining the polarizing film 93 between the first prism 91 and the second prism 92 of the triangle to form a quadrangle in the XZ plane.

The first 稜鏡91 is the side of the side where the illumination beam EL1 and the projection beam EL2 enter. The first 稜鏡91 has a first surface D1 on which the illumination light beam EL1 from the illumination optical module ILM enters and a second surface D2 on which the projection light beam EL2 from the mask M enters. Face 1 D1 opposite The chief ray of the illumination beam EL1 is vertical. In addition, the second surface D2 is perpendicular to the chief ray of the projection light beam EL2.

The second prism 92 is a prism on the side from which the projection beam EL2 of the polarizing film 93 is emitted. The second 稜鏡92 has a third surface D3 opposite to the first surface D1 of the first 稜鏡91, and a fourth surface D4 opposed to the second surface D2 of the first 珜鏡91. The fourth surface D4 is a surface where the projection light beam EL2 incident on the first 稜鏡91 is transmitted through the polarizing film 93, and the principal ray of the projection light beam EL2 relative to the outgoing surface is a vertical plane. At this time, the first surface D1 and the opposing third surface D3 become non-parallel, and on the other hand, the second surface D2 and the opposing fourth surface D4 are parallel.

The illumination light beam EL1 emitted from the first 稜鏡 91 to the second 珜鏡 92 is incident on the polarizing film 93. The polarizing film 93 reflects the illumination light beam EL1 of S polarized light (linear polarized light) and transmits the projection light beam EL2 of P polarized light (linear polarized light). Based polarizing film 93 in a thickness direction of the laminate as a main component silicon dioxide (SiO ₂₎ of the main membrane component is a hafnium oxide (SiO ₂₎ is formed of the membrane. Hafnium oxide is a material that has the same light beam absorption as quartz, and is a material that is not likely to change due to the absorption of the light beam. This polarizing film 93 is a film with a Brewster angle θ B. Here, the Brewster angle θ B is an angle at which the reflectance of P polarized light is 0.

The Brewster angle θ B is calculated by the following formula. In addition, nh is the refractive index of hafnium oxide, nL is the refractive index of silicon dioxide, and ns is the refractive index of Heng (quartz glass).

θ B=arcsin([(nh ² ×nL ² )/{ns ² (nh ² +nL ² )}] ^0.5 )

Here, if nh=2.07(HfO ₂ ), nL=1.47(SiO ₂ ), ns=1.47(quartz glass), according to the above formula, the Brewster angle θ B of the polarizing film 93 is approximately 54.6°.

However, the refractive indexes nh, nL, and ns of each material are not uniquely limited to the above values. The refractive index changes from approximately the wavelength used from ultraviolet to visible light, and has a slight range. In addition, there are cases where the refractive index changes due to slight addition of various materials. For example, the refractive index nh of hafnium oxide is distributed in the range of 2.00 to 2.15, and the refractive index nL of silicon dioxide is distributed in the range of 1.45 to 1.48. And considering the situation where the refraction changes due to the use of wavelength, the refractive index ns of 稜鏡 (quartz glass) will also change. If the refractive index ns is in the range of 1.45 to 1.48 as in the case of SiO ₂ described above, the Brewster angle θ B of the polarizing film 93 derived from the above formula will have a range of 52.4° to 57.3°.

As mentioned above, although the refractive index nh, nL, ns of each material will change slightly due to the material composition or the wavelength used, the Brewster angle θ B may also change, but in the following specific example, θ B=54.6° is used Instructions.

At this time, when the auxiliary line L1 is drawn as shown in FIG. 6, it can be seen that the angle θ 2 formed by the polarizing film 93 and the first surface D1 becomes the incident angle θ with the principal ray of the illumination light beam EL1 incident on the polarizing film 93 1 is the same angle. That is, the first prism 91 is formed such that the angle θ 2 formed by the first surface D1 and the polarizing film 93 is the same angle as the incident angle θ 1 of the chief ray of the illumination light beam EL1.

In addition, in FIG. 6, although the illumination light beam EL1 is reflected by the polarizing film 93, and the reflected light (projected light beam EL2) from the reticle M is transmitted through the polarizing film 93, the polarizing beam splitter PBS is formed. The illuminating light beam EL1 of the polarizing film 93 and the projected light beam EL2 have opposite reflection/transmission transparency. That is, the illumination light beam EL1 may be transmitted through the polarizing film 93, and the reflected light (projected light beam EL2) from the mask M may be reflected on the polarizing film 93. This embodiment will be described later.

As shown in FIG. 8, the direction in which the polarizing film 93 connects the first 稜鏡91 and the second 珜鏡92 is the film thickness direction. The polarizing film 93 has a first film body H1 of silicon dioxide and a second film body H2 of hafnium oxide, and the first film body H1 and the second film body H2 are stacked in the thickness direction. Specifically, the polarizing film 93 is a periodic layer in which plural layers of the first film body H1 and the second film body H2 are periodically stacked in the film thickness direction. Here, the chief ray of the illumination light beam EL1 incident on the polarizing film 93 enters When the angle θ 1 is a Brewster angle θ B of 54.6°, the polarizing film 93 is formed as a periodic layer of 18 cycles or more and 30 cycles or less. The layer body H includes a first film body H1 having a film thickness of λ/4 wavelength with respect to the wavelength λ of the illumination light beam EL1 and provided on both sides in the film thickness direction via the first film body H1 and having a wavelength λ of λ with respect to the illumination light beam EL1 One of the /8 wavelength film thicknesses is to the second film body H2. In the layered body H constructed in this way, by laminating a plurality of layers in the film thickness direction, each second film body H2 of the layered body H is integrated with each second film body H2 of the adjacent layered body H to form a λ/4 wavelength The second film body H2 of the film thickness. Therefore, the polarizing film 93 is a film body on both sides in the film thickness direction of a pair of λ/8 wavelength film thickness pair 2nd film body H2, and between a film thickness of λ/8 wavelength pair 2nd film body H2, The first film body H1 having a film thickness of λ/4 wavelength and the second film body H2 having a film thickness of λ/8 wavelength are alternately provided.

In addition, the polarizing film 93 is fixed between the first 稜鏡91 and the second 珜鏡92 by an adhesive or optical glue. For example, after the polarizing beam splitter PBS is formed on the first 稜鏡 91 and the polarizing film 93 is formed, the second 鏜鏡 92 is bonded to the polarizing film 93 through an adhesive.

Next, the transmission characteristics and reflection characteristics of the above-mentioned polarizing beam splitter PBS will be described with reference to FIG. In FIG. 10, the incident angle θ 1 of the chief ray of the illumination beam EL1 incident on the polarizing film 93 of the polarizing beam splitter PBS is set to a Brewster angle θ B of 54.6°, the polarizing film 93 is a 21-period layer, and the illumination beam EL1 uses a YAG laser with triple harmonics. In the graph shown in FIG. 10, the horizontal axis is the incident angle θ1, and the vertical axis is the transmittance/reflectance. In the graph shown in FIG. 10, Rs is a reflected light beam of S-polarized light entering the polarizing film 93, Rp is a reflected light beam of P-polarized light entering the polarizing film 93, and Ts is a transmitted light beam of S-polarized light entering the polarizing film 93 , Tp is a transmission beam of P-polarized light incident on the polarizing film 93.

Here, the polarizing film 93 of the polarizing beam splitter PBS reflects the reflected light beam (illumination light beam) of S polarized light and transmits the transmitted light beam (projected light beam) of P polarized light. The polarizing film 93 having a high reflectance of the reflected light beam Rs and a high transmittance of the transmitted light beam Tp has excellent film characteristics. In other words, it is a polarizing film having excellent film characteristics with low reflectance of reflected light beam Rp and low transmittance of transmitted light beam Ts. In FIG. 10, the range of transmittance/reflectance of the polarizing film 93 that can be used most appropriately is relative to the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp at a Brewster angle θ B of 54.6° The range of decrease in transmittance/reflectance is -5%. That is, since the transmittance/reflectance at the Brewster angle θ B is 100%, the range of the reflectance of the transmitted beam Ts and the transmittance of the transmitted beam Tp of 95% or more is the most suitable polarizing film 93 Transmittance/reflectivity range. In the case shown in FIG. 10, in the range of the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp of 95% or more, the range of the incident angle θ 1 is 46.8° or more and 61.4° or less.

As can be seen from the above, in FIG. 10, when the incident angle θ 1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 of the polarizing beam splitter PBS is set to the Brewster angle θ B of 54.6°, the The range of the incident angle of the light beam other than the chief ray of the illumination light beam EL1 is set to 46.8° or more and 61.4° or less, so that the angle range of the incidence angle of the illumination light beam EL1 that enters the polarizing film 93 becomes 14.6°.

Therefore, in the illumination optical module ILM of the exposure device U3, the incident angle θ 1 of the illumination beam EL1 incident on the polarizing film 93 of the polarizing beam splitter PBS is 46.8° or more and 61.4° or less, and can be illuminated The chief ray of the light beam EL1 emits the illumination light beam EL1 in such a manner that the Brewster angle θ B is 54.6°.

Next, referring to FIG. 9, a polarizing beam splitter PBS as a comparative example to the polarizing beam splitter PBS of the first embodiment shown in FIG. 8 will be described. As a comparative example, the polarizing beam splitter PBS has substantially the same configuration as the first embodiment, and has a first 稜鏡91, a second 稜鏡92, And a polarizing film 100 provided between the first 稜鏡91 and the second 珜鏡92. The first 稜鏡91 and the second 稜鏡92 are the same as those in the first embodiment, so the description is omitted.

As the polarizing film 100 of the polarizing beam splitter PBS of the comparative example, the chief ray of the illumination light beam EL1 that emits the polarizing film 100 becomes a film with an incident angle θ 1 of 45°. Specifically, when the chief ray of the illuminating light beam EL1 incident on the polarizing film 100 has an incident angle θ 1 of 45°, the polarizing film 100 stacks the layer body H in the film thickness direction 31 as in the first embodiment Periodic layers above and below 40 cycles.

Next, the transmission characteristics and reflection characteristics of the polarizing beam splitter PBS of the comparative example will be described with reference to FIG. 11. In FIG. 11, the incident angle θ 1 of the chief ray of the illumination beam EL1 incident on the polarizing film 100 of the polarizing beam splitter PBS is set to an incident angle of 45°. The polarizing film 100 is a 33-period layer, and the illumination beam EL1 is used YAG laser with triple harmonics. In the graph shown in FIG. 11, the horizontal axis is the incident angle, and the vertical axis is the transmittance/reflectance, Rs is the reflected beam of S-polarized light incident on the polarizing film 100, and Rp is the P-polarized light incident on the polarizing film 100 Of the reflected beams, Ts is a transmitted beam of S-polarized light incident on the polarizing film 100, and Tp is a transmitted beam of P-polarized light incident on the polarizing film 100.

In FIG. 11, the range of transmittance/reflectance of the polarizing film 100 that can be used most suitably is the range of the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp of 95% or more. In the case shown in FIG. 11, in the range of the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp of 95% or more, the range of the incident angle θ 1 is 41.9° or more and 48.7° or less.

As can be seen from the above, in FIG. 11, when the incident angle θ 1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 100 of the polarizing beam splitter PBS is set to 45, the chief ray of the illumination light beam EL1 can be set The range of the incident angle of light rays is set to 41.9° or more and 48.7° or less, so that the angle range of the incident angle θ 1 of the illumination light beam EL1 incident on the polarizing film 100 can be 6.8° Scope. Therefore, the polarizing beam splitter PBS shown in FIG. 8 can increase the angle range of the incident angle θ 1 of the illumination light beam EL1 by about twice as compared with the polarizing beam splitter PBS shown in FIG. 9.

<Component manufacturing method>

Next, referring to Fig. 12, a device manufacturing method will be described. FIG. 12 is a flowchart showing the device manufacturing method of the first embodiment.

The device manufacturing method shown in FIG. 12 first performs function and performance design of a display panel formed using self-luminous elements such as organic EL, and designs circuit patterns and wiring patterns required by CAD or the like (step S201). Next, a mask M of a desired layer amount is manufactured according to various patterns of each layer designed by CAD or the like (step S202). And a roll FR1 for supplying the flexible substrate P (resin film, metal foil film, plastic, etc.) serving as the base material of the display panel is prepared (step S203). In addition, the roll substrate P prepared in this step S203 may be the one whose surface has been modified as necessary, or the bottom layer (for example, micro unevenness by imprint) has been formed in advance, or the light is previously deposited Inductive functional film or transparent film (insulating material).

Next, an electrode constituting a display panel element or a base layer composed of wiring, an insulating film, a TFT (thin film semiconductor), etc. are formed on the substrate P, and light emission composed of a self-luminous element such as an organic EL is formed by being laminated on the base Layer (display pixel portion) (step S204). In this step S204, although it includes the conventional lithography process of exposing the photoresist layer using the exposure device U3 described in the previous embodiments, it also includes a substrate P pattern coated with a photosensitive silane coupling agent instead of the photoresist Exposure comes from the exposure process of forming a water-repellent pattern on the surface, the wet process of exposing the photosensitive catalyst layer pattern and forming the metal film pattern (wiring, electrode, etc.) by electroless plating, or containing silver nano Processes such as printing processes for drawing patterns of conductive inks such as rice particles.

Next, for each display that is continuously manufactured on the long substrate P in a roll manner The display panel element is cut into the substrate P, or a protective film (environmental barrier layer) or color filter film is bonded to the surface of each display panel element to assemble the element (step S205). Next, a step of checking whether the display panel element can operate normally or whether it satisfies the desired performance and characteristics is performed (step S206). Through the above method, a display panel (flexible display) can be manufactured.

As described above, in the first embodiment, in the illumination optical system IL using epi-illumination using the polarizing beam splitter PBS, the illumination beam EL1 is reflected by the polarizing beam splitter PBS and the projection beam EL2 is transmitted through the illumination The optical system IL and the projection optical system PL share the polarizing beam splitter PBS, and the outer shape of the lens element in the illumination optical module ILM at least close to the polarizing beam splitter PBS is set to a shape corresponding to the distribution of the illumination beam EL1, and The illumination optical module ILM and the polarizing beam splitter PBS can be provided between the mask M and the projection optical module PLM. Therefore, it can alleviate the physical interference between the illumination optical system IL and the projection optical system PL, especially the physical interference conditions between the illumination optical module ILM and the projection optical module PLM, and improve the illumination optical module ILM and the polarizing beam splitter. The freedom of arrangement of the PBS, the freedom of arrangement of the projection optical module PLM and the polarization beam splitter PBS, and the illumination optical system IL and the projection optical system PL can be easily configured.

Furthermore, in the first embodiment, the fourth relay lens 56d or the third relay lens 56c adjacent to the polarizing beam splitter PBS includes a portion (entrance area S2) through which the illumination light beam EL1 passes substantially, but is not The lens profile of the portion (not the incident area S1) that the illumination light beam EL1 does not substantially pass through, so even if it is a small illumination optical module ILM, the illumination light beam EL1 will hardly cause loss, but the The lighting conditions (telecentricity, uniformity of illuminance, etc.) are maintained at high precision, and the degree of freedom of the configuration of the illumination optical module ILM and the projection optical module PLM is improved.

In the first embodiment, although the illumination optical module ILM is included A part of the lens is missing to reduce the shape, but a part of the lens included in the projection optical module PLM may also be missing to reduce the shape. In this case, as in the illumination optical module ILM, a part of the lens close to the polarizing beam splitter PBS side, for example, the lens located on the side of the first deflection member 70 of the first lens group 71 can be damaged to reduce the outer shape.

Moreover, in the first embodiment, the polarizing film 93 of the polarizing beam splitter PBS can be formed by stacking the first film body H1 of silicon dioxide and the second film body H2 of hafnium oxide in the film thickness direction. Therefore, the polarizing film 93 can make the reflectance of the S-polarized reflected light beam (illumination light beam) incident on the polarizing film 93 and the P-polarized transmitted light beam (projection light beam) incident on the polarizing film 93 high. By this means, even when the illumination beam EL1 with a high energy density at a wavelength below the i-line enters the polarizing film 93, the polarizing beam splitter PBS can suppress the load applied to the polarizing film 93, and can reflect the reflected beam and The transmitted beams are very appropriately separated.

Furthermore, in the first embodiment, the polarizing film 93 can be formed as a film whose incident angle θ 1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 is a Brewster angle θ B of 54.6°. In other words, by setting the chief ray of the illumination beam EL1 incident on the polarizing film 93 to a Brewster angle θ B of 54.6°, the range of the incident angle θ 1 angle of the illumination beam EL1 incident on the polarizing film 93 can be set as Above 46.8°, below 61.4°. Therefore, the angle range of the incident angle θ 1 of the illumination light beam EL1 incident on the polarizing film 93 can be expanded. Thereby, the numerical aperture NA of the lens provided adjacent to the polarizing beam splitter PBS can be increased in accordance with the expansion of the angle range of the incident angle θ 1 of the illumination light beam EL1. Therefore, by using a lens with a large numerical aperture NA, the resolution of the exposure device U3 can be improved, and a fine mask pattern can be exposed to the substrate P.

In addition, due to the uneven refractive index of the material (film body) constituting the polarizing film 93, the Brewster angle θ B of the polarizing film 93 in the first embodiment can be in the range of 52.4° to 57.3°. As long as the range is considered, the angle range of the incident angle θ 1 of the illumination light beam EL1 incident on the polarizing film 93 may be set.

Moreover, in the first embodiment, the first surface D1 and the third surface D3 of the polarizing beam splitter PBS can be made non-parallel, and the second surface D2 and the fourth surface D4 can be made parallel. Furthermore, in the first embodiment, the angle θ 2 formed by the first surface D1 and the polarizing film 93 can be made the same as the incident angle θ 1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93. Therefore, the principal ray of the illumination beam EL1 incident on the first plane D1 can make the first plane D1 a vertical plane, and the principal ray of the projection beam EL2 incident on the second plane D2 can make the second plane D2 becomes a vertical plane. With this, the polarization beam splitter PBS can suppress the reflection of the illumination light beam EL1 on the first surface D1 and the reflection of the projection light beam EL2 on the second surface D2.

Furthermore, in the first embodiment, the polarizing film 93 as a periodic layer can be formed by periodically depositing a plurality of layers in a predetermined layer body H in the film thickness direction. At this time, for example, the incident angle θ 1 of the chief ray of the illumination light beam EL1 is 54.6° at the Brewster angle θ B of the polarizing film 93 (FIG. 8), as compared with the incidence angle of the chief ray of the illumination light beam EL1 θ 1 is the polarizing film 100 of the 45° polarizing beam splitter PBS (FIG. 9), which can reduce the periodic layer. Therefore, since the polarizing film 93 of FIG. 8 has fewer periodic layers than the polarizing film 100 of FIG. 9, the structure can be simplified accordingly, and the manufacturing cost of the polarizing beam splitter PBS can be reduced.

In addition, in the first embodiment, the polarizing film 93 can be very suitably fixed between the first 稜鏡91 and the second 菜鏡92 by an adhesive or an optical glue. In addition, in the first embodiment, the polarizing beam splitter PBS and the 1/4 wavelength plate 41 may be fixed together by an adhesive or optical glue. In this case, the relative position of the polarizing beam splitter PBS and the quarter-wave plate 41 can be prevented from being shifted.

Furthermore, in the first embodiment, a wavelength below the i-line can be used as the illumination light beam EL1. For example, since a harmonic laser or an excimer laser can be used, an illumination light beam EL1 suitable for exposure processing can be used.

Furthermore, in the first embodiment, since the polarization direction of the quarter-wave plate 41 can be adjusted by the polarization adjustment mechanism 68 to adjust the illuminance of the projection area PA, the illuminance of the plurality of projection areas PA1 to PA6 can be made uniform.

[Second Embodiment]

Next, the exposure apparatus U3 of the second embodiment will be described with reference to FIG. In addition, in order to avoid duplication of description, only the parts different from those in the first embodiment will be described, and the same constituent elements as those in the first embodiment will be given the same symbols as in the first embodiment. 13 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a second embodiment. Although the exposure apparatus U3 of the first embodiment is configured to hold the cylindrical reflective mask M to the rotatable mask holding cylinder 21, the exposure apparatus U3 of the second embodiment uses a flat plate The reflective mask MA is held by a movable mask holding mechanism 11.

In the exposure apparatus U3 of the second embodiment, the mask holding mechanism 11 includes a mask stage 110 that holds a planar mask MA, and the mask stage 110 is along the X direction in a plane orthogonal to the center plane CL Scan mobile devices (not shown).

Since the mask surface P1 of the mask MA in FIG. 13 is a plane substantially parallel to the XY plane, the chief ray of the projection light beam EL2 reflected from the mask MA is perpendicular to the XY plane. Therefore, the chief rays of the illumination beams EL1 of the illumination optics IL1~IL6 of the illumination regions IR1~IR6 on the illumination mask MA are also arranged to be perpendicular to the XY plane.

The chief ray of the projection beam EL2 reflected on the mask MA is perpendicular to the XY plane In a straight situation, the first line L1 and the second line L2 that define the arrangement area E will also change corresponding to the chief ray of the projection light beam EL2. That is, the second line L2 is the direction perpendicular to the XY plane from the intersection of the mask MA and the principal ray of the projection beam EL2, and the first line L1 is the intersection point of the mask MA and the principal ray of the projection beam EL2 The direction parallel to the XY plane. Therefore, the configuration of the illumination optical module ILM can be appropriately changed along with the change of the arrangement area E, and with the change of the configuration of the illumination optical module ILM, the arrangement of the polarizing beam splitter PBS is also appropriately changed.

In addition, when the chief ray of the projection light beam EL2 reflected by the mask MA is perpendicular to the XY plane, the first reflection surface P3 of the first deflection member 70 included in the first optical system 61 of the projection optical module PLM is The angle at which the projected light beam EL2 from the polarizing beam splitter PBS is reflected and the reflected projected light beam EL2 passes through the first lens group 71 and enters the first concave mirror 72 is set. Specifically, the first reflection surface P3 of the first deflection member 70 is set to be substantially 45° with respect to the second optical axis BX2 (XY plane).

Also, in the second embodiment, as in the previous FIG. 2, when viewed in the XZ plane, from the center point of the illumination area IR1 (and IR3, IR5) on the mask MA to the illumination area IR2 (and IR4, IR6 ) The perimeter of the center point and the perimeter of the projection area PA1 (and PA3, PA5) along the support surface P2 on the substrate P to the center point of the second projection area PA2 (and PA4, PA6) Set to be substantially equal.

In the exposure device U3 of FIG. 13, the lower-level control device 16 also controls the moving device of the reticle holding mechanism 11 (a linear motor for scanning exposure or an actuator for fine movement, etc.), in synchronization with the rotation of the substrate support cylinder 25地驱动mask stage 110. The exposure apparatus U3 of FIG. 11 must perform the operation (rewind) to return the mask MA to the initial position in the -X direction after the scanning exposure of the mask MA moves synchronously in the +X direction. Therefore, the substrate is supported at a certain speed When the cylinder 25 continuously rotates and continuously transports the substrate P at a constant speed, during the rewinding operation of the mask MA, the pattern is not exposed on the substrate P, but the panel is formed discretely (separately) in the transport direction of the substrate P pattern. However, practically, since the speed of the substrate P during scanning exposure (here, the peripheral speed) and the speed of the mask MA are assumed to be 50 mm/s to 100 mm/s, when rewinding the mask MA, for example, only 500 mm If the mask stage 110 is driven at the highest speed of /s, the margin in the conveying direction between the patterns for panels formed on the substrate P can be reduced.

[Third Embodiment]

Next, the exposure apparatus U3 of the third embodiment will be described with reference to FIG. 14. In addition, in order to avoid duplication of description, only the parts that are different from the first embodiment (or the second embodiment) are described, and the same constituent elements as the first embodiment (or the second embodiment) are given The same symbols as in the first embodiment (or second embodiment) will be described. 14 is a diagram showing the configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment. The exposure apparatus of FIG. 14 is a so-called scanning exposure apparatus similar to the previous embodiments, and projects the reflected light (projection beam EL2) from the reflective cylindrical mask on the flexible substrate transported in a planar shape On P, the peripheral speed of the rotation of the cylindrical mask M is synchronized with the transport speed of the substrate P.

The exposure apparatus U3 of the third embodiment is an example of an exposure apparatus in which the reflection/transmission characteristics of the illumination beam EL1 and the projection beam EL2 in the polarizing beam splitter PBS are opposite. In FIG. 14, the relay lens 56 disposed along the optical axis BX1 of the illumination optical module ILM at least closest to the polarizing beam splitter PBS is made to eliminate the portion (not incident) that the illumination beam EL1 does not pass through The shape of the area S1) to avoid spatial interference with the projection optical module PLM. Furthermore, the extension line of the optical axis BX1 of the illumination optical module ILM crosses the first axis AX1 (the line serving as the rotation center).

The polarizing beam splitter PBS is arranged such that the second surface D2 and the fourth surface D4 parallel to each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, and the first surface D1 and the projection optical module PLM are arranged The optical axis BX4 (fourth optical axis) is perpendicular. Although the crossing angle of the optical axis BX1 and the optical axis BX4 in the ZX plane is the same as the condition of the previous polarizing film 93 in FIG. 6, here it is set to an angle other than 90 degrees so that the projection beam EL2 is at the Brewster angle θ B( 52.4°~57.3°) reflection.

The polarizing film 93 (wavefront dividing surface) of the polarizing beam splitter PBS of the present embodiment can be formed by laminating a plurality of layers of the first film body of silicon dioxide and the second film body of hafnium oxide in the thickness direction. Therefore, the polarizing film 93 can make the reflectance of S polarized light incident on the polarizing film 93 and the transmittance of P polarized light incident on the polarizing film 93 higher. By this means, even when the illumination beam EL1 with a high energy density at a wavelength below the i-line enters the polarizing film 93, the polarizing beam splitter PBS can suppress the load applied to the polarizing film 93, and can reflect the reflected beam and The transmitted beams are very appropriately separated. Making the polarizing film 93 a laminated structure of the first film body of silicon dioxide and the second film body of hafnium oxide can also be applied to the polarizing beam splitter PBS of the previous first embodiment or second embodiment.

In the case of the third embodiment, the P-polarized illumination light beam EL1 enters from the fourth surface D4 of the polarizing beam splitter PBS. Therefore, the illumination light beam EL1 is transmitted from the second surface D2 through the polarizing film 93, converted into circularly polarized light by the 1/4 wavelength plate 41, and irradiated to the illumination area IR on the mask surface P1 of the mask M. With the rotation of the reticle M, the projection light beam EL2 (circular polarized light) generated (reflected) from the reticle pattern appearing in the illumination area IR is converted into S-polarized light by the 1/4 wavelength plate 41 and enters the polarized light split The second side D2 of the beamer PBS. The S-polarized projection light beam EL2 is reflected by the polarizing film 93 and is emitted from the first surface D1 of the polarizing beam splitter PBS toward the projection optical module PLM.

In this embodiment, the projection light beam EL2 passes through the illuminated area on the mask M The chief ray Ls of the IR center (point Q1) is the first lens system G1 that enters the projection optical module PLM at a position decentered from the optical axis BX4 of the projection optical module PLM. When the diffusion (numerical aperture NA) of the projection light beam EL2 is small, when the polarizing beam splitter PBS is close to the cylindrical mask M by forming a shape that eliminates the portion of the lens system G1 that the projection light beam EL2 does not substantially pass through To avoid spatial interference between a part of the projection optical module PLM (lens system G1) and a part of the cylindrical mask M or the illumination optical module ILM (lens 56).

In FIG. 14, although it is described that the projection optical module PLM is a total refraction projection optical system in which the lens system G1 and the lens system G2 are arranged along the optical axis BX4, it is not limited to this system, and a concave surface, a convex surface or a The projected optics of the refraction type composed of a plane mirror and a lens. Alternatively, the lens system G1 may be a total refraction system, and the lens system G2 may be a refraction system. The magnification when imaging the image of the pattern in the illumination area IR on the mask surface P1 on the projection area PA on the substrate P may also be It is any one of enlargement or reduction other than equal magnification (×1).

In FIG. 14, the substrate supporting member PH supporting the substrate P is made into a flat surface, and an air bearing layer (gas bearing) of about several μm is formed between the surface and the back surface of the substrate P. The substrate P includes at least Within a predetermined range of the projection area PA, there is provided a conveying mechanism that conveys the substrate P in the longitudinal direction (X direction) while applying a certain tension to the substrate P using a nip-type driving roller or the like to make it flat. Of course, in this embodiment, the substrate P may be wound around a part of a cylindrical body such as the substrate support cylinder 25 shown in FIG. 2 and transported.

In addition, in the exposure unit composed of the illumination optical module ILM, the polarizing beam splitter PBS, the 1/4 wavelength plate 41, and the projection optical module PLM as shown in FIG. 14, the central axis of rotation of the mask M (the first axis ) When multiple directions are set in the direction of AX1 and become multiple, as long as the mask M is included The center axis of rotation, that is, the first axis AX1, may be disposed symmetrically via the center plane CL parallel to the ZY plane.

In the third embodiment above, by using a polarizing beam splitter PBS having a polarizing film (multilayer film) 93 having a laminated structure of a hafnium oxide film body and a silicon dioxide film body, even when a high-intensity laser in the ultraviolet wavelength region is used In the case where the emitted light is used as the illumination beam EL1, it is possible to stably continue high-resolution pattern exposure. The polarizing beam splitter PBS provided with such a polarizing film 93 can also be used in the previous first embodiment and second embodiment.

[Fourth Embodiment]

Next, the exposure apparatus U3 of the fourth embodiment will be described with reference to FIG. 15. In addition, in order to avoid duplication of description, only the parts that are different from the first embodiment (to the third embodiment) are described, and the same constituent elements as the first embodiment (to the third embodiment) are given The same symbols as in the first embodiment (up to the third embodiment) will be described. 15 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment. Although the exposure apparatus U3 of the fourth embodiment is configured to hold the cylindrical reflective mask M to the rotatable mask holding cylinder 21, the exposure apparatus U3 of the fourth embodiment uses a flat plate The reflective mask MA is held by a movable mask holding mechanism 11.

In the exposure apparatus U3 of the fourth embodiment, the mask holding mechanism 11 includes a mask stage 110 that holds a planar mask MA, and the mask stage 110 is along the X direction in a plane orthogonal to the center plane CL Scan mobile devices (not shown).

Since the mask surface P1 of the mask MA of FIG. 15 is a plane substantially parallel to the XY plane, the chief ray of the projection beam EL2 reflected from the mask MA is perpendicular to the XY plane. Therefore, the illumination optics of the illumination regions IR1~IR6 on the illumination mask MA are the illumination beams of IL1~IL6 The chief ray of EL1 is also arranged perpendicular to the XY plane.

When the chief ray of the illumination beam EL1 illuminated on the mask MA is perpendicular to the XY plane, the polarizing beam splitter PBS is configured such that the incidence angle θ 1 of the chief ray of the illumination beam EL1 incident on the polarizing film 93 becomes the blues At a special angle θ B (52.4°~57.3°), the chief ray of the illumination beam EL1 reflected by the polarizing film 93 is perpendicular to the XY plane. With the change of the configuration of the polarizing beam splitter PBS, the configuration of the illumination optical module ILM is also appropriately changed.

In addition, when the chief ray of the projection light beam EL2 reflected from the mask MA is perpendicular to the XY plane, the first reflection surface P3 of the first deflection member 70 included in the first optical system 61 of the projection optical module PLM is The angle at which the projected light beam EL2 from the polarizing beam splitter PBS is reflected and the reflected projected light beam EL2 passes through the first lens group 71 and enters the first concave mirror 72 is set. Specifically, the first reflection surface P3 of the first deflection member 70 is set to be substantially 45° with respect to the second optical axis BX2 (XY plane).

Also, in the fourth embodiment, as in the previous FIG. 2, when viewed in the XZ plane, from the center point of the illumination area IR1 (and IR3, IR5) on the mask MA to the illumination area IR2 (and IR4, IR6 ) The perimeter of the center point and the perimeter of the projection area PA1 (and PA3, PA5) along the support surface P2 on the substrate P to the center point of the second projection area PA2 (and PA4, PA6) Set to be substantially equal.

In the exposure device U3 of FIG. 15, the lower-level control device 16 also controls the moving device of the reticle holding mechanism 11 (a linear motor for scanning exposure or an actuator for fine movement, etc.), in synchronization with the rotation of the substrate support cylinder 25地驱动mask stage 110. The exposure apparatus U3 of FIG. 15 must perform the operation (rewind) of returning the mask MA to the initial position in the -X direction after the mask MA moves synchronously in the +X direction for scanning exposure. Therefore, the substrate is supported at a certain speed When the cylinder 25 continuously rotates and continuously transports the substrate P at a constant speed, during the rewinding operation of the mask MA, the pattern is not exposed on the substrate P, but the panel is formed discretely (separately) in the transport direction of the substrate P pattern. However, practically, since the speed of the substrate P during scanning exposure (here, the peripheral speed) and the speed of the mask MA are assumed to be 50 mm/s to 100 mm/s, when rewinding the mask MA, for example, only 500 mm If the mask stage 110 is driven at the highest speed of /s, the margin in the conveying direction between the patterns for panels formed on the substrate P can be reduced.

[Fifth Embodiment]

Next, the exposure apparatus U3 of the fifth embodiment will be described with reference to FIG. 16. In addition, in order to avoid duplication of description, only the parts that are different from the first embodiment (to the fourth embodiment) are described, and the same constituent elements as the first embodiment (to the fourth embodiment) are given The same symbols as in the first embodiment (up to the fourth embodiment) will be described. 16 is a diagram showing the configuration of an exposure apparatus (substrate processing apparatus) according to a fifth embodiment. The exposure device U3 of the fifth embodiment is an example of an exposure device in which the reflection/transmission characteristics of the illumination beam EL1 and the projection beam EL2 in the polarizing beam splitter PBS are opposite. In FIG. 16, the relay lens 56 disposed along the optical axis BX1 of the illumination optical module ILM at least closest to the polarizing beam splitter PBS is formed by cutting the portion where the illumination beam EL1 does not pass. Avoid spatial interference with the projection optical module PLM. Moreover, the extension line of the optical axis BX1 of the illumination optical module ILM crosses the first axis AX1 (the line serving as the rotation center).

The polarizing beam splitter PBS is arranged such that the second surface D2 and the fourth surface D4 parallel to each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, and the first surface D1 and the projection optical module PLM are arranged The optical axis BX4 (fourth optical axis) is perpendicular. Although the crossing angle of the optical axis BX1 and the optical axis BX4 in the ZX plane is the same as the condition of the polarizing film 93 in FIG. 6 above, it is set here It is an angle other than 90 degrees so that the projection beam EL2 is reflected at Brewster angle θ B (52.4°~57.3°).

In the case of this embodiment, the P-polarized illumination light beam EL1 enters from the fourth surface D4 of the polarizing beam splitter PBS. Therefore, the illumination light beam EL1 is transmitted from the second surface D2 through the polarizing film 93, converted into circularly polarized light by the 1/4 wavelength plate 41, and irradiated to the illumination area IR on the mask surface P1 of the mask M. With the rotation of the reticle M, the projection light beam EL2 (circular polarized light) generated (reflected) from the reticle pattern appearing in the illumination area IR is converted into S-polarized light by the 1/4 wavelength plate 41 and enters the polarized light split The second side D2 of the beamer PBS. The S-polarized projection light beam EL2 is reflected by the polarizing film 93 and is emitted from the first surface D1 of the polarizing beam splitter PBS toward the projection optical module PLM.

In this embodiment, the chief ray Ls of the projection light beam EL2 passing through the center of the illumination region IR on the mask M is the first lens that enters the projection optical module PLM from the position decentered from the optical axis BX4 of the projection optical module PLM Department G1. When the diffusion (numerical aperture NA) of the projection beam EL2 is small, by cutting off the portion of the lens system G1 that the projection beam EL2 does not substantially pass, spatial interference with the lens 56 of the illumination optical module ILM can be avoided.

In FIG. 16, although it is described that the projection optical module PLM is a total refraction projection optical system in which the lens system G1 and the lens system G2 are arranged along the optical axis BX4, it is not limited to this system, and a concave surface, a convex surface or a The projected optics of the refraction type composed of a plane mirror and a lens. Alternatively, the lens system G1 may be a total refraction system, and the lens system G2 may be a refraction system. The magnification when imaging the image of the pattern in the illumination area IR on the mask surface P1 on the projection area PA on the substrate P may also be It is any one of enlargement or reduction other than equal magnification (×1).

In FIG. 16, the substrate supporting member PH supporting the substrate P is made into a flat surface, and an air bearing layer (gas bearing) of about several μm is formed between the surface and the back surface of the substrate P. The substrate P includes at least Within a given range of the projection area PA, there is a side A conveying mechanism that conveys the substrate P in a longitudinal direction (X direction) while applying a certain tension to make the substrate P flat. Of course, in this embodiment, the substrate P may be wound around a part of a cylindrical body such as the substrate support cylinder 25 shown in FIG. 2 and transported.

In addition, in the exposure unit composed of the illumination optical module ILM, the polarizing beam splitter PBS, the 1/4 wavelength plate 41, and the projection optical module PLM as shown in FIG. 16, the central axis of rotation of the mask M (the first axis) ) In the direction of) and a plurality of them, as long as the exposure unit includes the first axis AX1 that is the center axis of rotation of the mask M, and the exposure unit is symmetrically arranged via the center plane CL parallel to the ZY plane.

In the fifth embodiment above, by using a polarizing beam splitter PBS having a polarizing film (multilayer film) 93 having a laminated structure of a hafnium oxide film body and a silicon dioxide film body, even when a high-luminance laser in the ultraviolet wavelength region is used In the case where the emitted light is used as the illumination beam EL1, it is possible to stably continue high-resolution pattern exposure. The polarizing beam splitter PBS provided with such a polarizing film 93 can also be used in the previous first embodiment and second embodiment.

Although the exposure apparatus U3 described in the above embodiments uses a mask M that fixes a predetermined mask pattern into a planar or cylindrical shape, it can also be used to project exposure of a variable mask pattern in the same way A device such as a beam splitter of a maskless exposure device disclosed in Japanese Patent No. 4223036.

The maskless exposure device passes through a programmable mirror array that receives the exposure illumination light reflected by the beam splitter and the beam (reflected beam) patterned by the mirror array passes through the beam splitter and the projection system (Some cases include a microlens array) A structure projected onto the substrate. If the polarizing beam splitter PBS shown in FIG. 8 is used as the beam splitter of such a maskless exposure device, even if high-brightness laser light in the ultraviolet wavelength region is used as the illumination light, it can be stably maintained Continue high-resolution pattern exposure.

The polarizing beam splitter PBS used in the previous embodiments is composed of a film body mainly composed of silicon dioxide (SiO ₂ ) and a film body mainly composed of hafnium oxide (HfO ₂ ) in the film thickness direction. , But can also be other materials. For example, magnesium fluoride (MgF ₂ ), which is a material having a low refractive index for ultraviolet light near a wavelength of 355 nm and a high resistance to ultraviolet laser light, similar to quartz or silicon dioxide (SiO ₂ ), can also be used. In addition, similar to hafnium oxide (HfO ₂ ), zirconium oxide (ZrO ₂ ), which has a low refractive index for ultraviolet rays near a wavelength of 355 nm and is highly resistant to ultraviolet laser light, can also be used. Next, the results of the characteristics simulation of the polarizing film 93 obtained by changing the combination of these materials will be described based on the following FIGS. 17 to 22.

FIG. 17 schematically shows a polarizing film 93 when a film body of hafnium oxide (HfO ₂ ) is used as a material of high refractive index, and a film body of magnesium fluoride (MgF ₂ ) is used as a material of low refractive index. If the refractive index nh of hafnium oxide is 2.07, the refractive index nL of magnesium fluoride is 1.40, and the refractive index ns of 稜鏡 (quartz glass) is 1.47, then the Brewster angle θ B is based on the following formula θ B=arcsin([( nh ² ×nL ² )/{ns ² (nh ² +nL ² )}] ^0.5 )

It is known that it is about 52.1°.

Therefore, a film layer of hafnium oxide with a thickness of 22.8 nm is stacked on the upper and lower layers of a magnesium fluoride film body with a thickness of 78.6 nm as a periodic layer, and a polarizing film 93 with an amount of 21 cycles is provided on the first tin 91 Between the joint surface with the second 稜鏡92. In the polarizing beam splitter PBS equipped with the polarizing film 93 shown in FIG. 17, the optical characteristics shown in FIG. 18 can be obtained as a result of the simulation. If the wavelength of the illumination light in the simulation is set to 355 nm, the incidence angle θ 1 of the reflectance Rp for P polarized light is 5% or less (transmittance Tp is 95% or more) becomes 43.5° or more, and the reflectance for S polarized light The incident angle θ 1 where Rs is 95% or more (transmittance Ts is 5% or less) becomes 59.5° or less. In this case, also Good polarization separation characteristics can be obtained within a range of about 15° from -8.6° to +7.4° relative to Brewster angle θ B (52.1°).

In addition, FIG. 19 schematically shows a polarizing film 93 when a film body of zirconia (ZrO ₂ ) is used as a material with a high refractive index and a film body of silicon dioxide (SiO ₂ ) is used as a material with a low refractive index. If the refractive index nh of zirconia is 2.12, the refractive index nL of silicon dioxide is 1.47, and the refractive index ns of prism (quartz glass) is 1.47, the Brewster angle θ B is about 55.2° according to the above formula.

Therefore, a layer of silicon dioxide with a thickness of 88.2 nm and a layer of zirconium oxide with a thickness of 20.2 nm stacked on the top and bottom are used as the periodic layer, and the polarizing film 93 with an amount of 21 cycles is provided on the first 稜鏡 91 Between the joint surface with the second 稜鏡92. In the polarizing beam splitter PBS equipped with the polarizing film 93 shown in FIG. 19, the simulation results can obtain the optical characteristics as shown in FIG. If the wavelength of the illumination light in the simulation is set to 355 nm, the incidence angle θ 1 of the reflectance Rp for P polarized light is 5% or less (transmittance Tp is 95% or more) becomes 47.7°, and the reflectance Rs for S polarized light The incident angle θ 1 of 95% or more (transmittance Ts is 5% or less) becomes 64.1° or less. In the case of this example, good polarization separation characteristics can also be obtained within a range of about 16.4° from -7.5° to +8.9° relative to Brewster angle θ B (55.2°).

In addition, FIG. 21 schematically shows a polarizing film 93 when a film body of zirconia (ZrO ₂ ) is used as a material of high refractive index and a film body of magnesium fluoride (MgF ₂ ) is used as a material of low refractive index. If the refractive index nh of zirconia is 2.12, the refractive index nL of magnesium fluoride is 1.40, and the refractive index ns of prism (quartz glass) is 1.47, the Brewster angle θ B becomes approximately 52.6° according to the above formula.

Therefore, a film layer of zirconia with a thickness of 22.1 nm stacked on the upper and lower layers of a magnesium fluoride film with a thickness of 77.3 nm is used as a periodic layer, and a polarizing film 93 with an amount of 21 cycles is provided on the first 稜鏡 91 Between the joint surface with the second 稜鏡92. With the polarized light shown in Figure 21 In the polarizing beam splitter PBS of the film 93, the simulation results can obtain the optical characteristics as shown in FIG. If the wavelength of the illumination light in the simulation is set to 355 nm, the incidence angle θ 1 of the reflectance Rp for P polarized light is 5% or less (transmittance Tp is 95% or more) becomes 43.1°, and the reflectance Rs for S polarized light The incident angle θ 1 of 95% or more (transmittance Ts is 5% or less) becomes 60.7°. In the case of this example, good polarization separation characteristics can be obtained within a range of about 17.6° from -9.5° to +8.1° relative to Brewster angle θ B (52.6°).

As shown in FIG. 4 previously, the projection light beam EL2 reflected on the mask M is projected on the substrate P along with the diffusion angle θ na limited by the numerical aperture (NA) of the projection optical system PL of equal magnification. The numerical aperture NA is defined as NA=sin(θ na), and together with the wavelength λ of the illumination beam EL1 determines the resolution RS of the head image of the projection optical system PL. The numerical aperture of the illumination light beam EL1 is also set to be the same as or less than the numerical aperture NA of the mask side of the projection optical system PL when the mask M has a flat mask surface as shown in FIG. 15.

For example, when the wavelength λ of the illumination beam EL1 is 355 nm, the process factor (Process Fator) k is 0.5, and 3 μm is obtained as the resolution force RS, based on RS=k. (λ/NA), the numerical aperture NA on the mask side of the equal-magnification projection optical system PL becomes about 0.06 (θ na≒3.4°). Although the numerical aperture of the illumination beam EL1 from the illumination optics IL is generally slightly smaller than the numerical aperture NA of the reticle side of the projection optics PL, it is assumed to be equal here.

However, as previously described in FIG. 5A, when the mask surface is a cylindrical mask formed along a cylindrical surface of radius Rm, the chief ray of the illumination beam EL1 is at a wider angle in the circumferential direction of the cylindrical mask Expand. Here, if the circumferential exposure width of the illumination region IR on the reticle shown in FIG. 3 is De, then with respect to the principal ray of the illumination beam EL1 passing through the point Q1 in FIG. 5A, the exposure width De The chief ray of the illumination beam EL1 at the end in the most circumferential direction is roughly inclined The angle ψ is as follows.

sin ψ≒(De/2)/(Rm/2)

Here, if the radius Rm of the cylindrical mask M is 150 mm and the exposure width De is 10 mm, the angle ψ is about 3.8°. Furthermore, since the chief ray of the illumination light beam EL1 passing through the end in the most circumferential direction of the exposure width De is applied by the angle θ na (approximately 3.4°) of the numerical aperture of the illumination light beam EL1, the illumination light beam EL1 is directed toward the illumination area IR The diffusion angle is within a range of ±(ψ+θ na) with respect to the chief ray of the illumination beam EL1 passing through the point Q1. That is, in the above numerical example, it is ±7.2°, and the illumination light beam EL1 is distributed in an angular range of 14.4° in the circumferential direction of the cylindrical mask surface.

As described above, although the illumination light beam EL1 is set to enter the cylindrical mask surface with a large angle range, even if it is such an angle range, as long as it is the polarizing beam splitter PBS of the embodiment shown in FIGS. 8 and 10, And the polarizing beam splitter PBS of the embodiment shown in FIGS. 17-22 can polarize and separate the illumination light beam EL1 and the projection light beam EL2 well.

Furthermore, the projection optical system PL enlarges and projects the pattern of the mask surface P1 onto the exposure device on the substrate P. The numerical aperture NAm on the mask surface P1 side of the projection optical system PL is increased compared to the numerical aperture NAp on the substrate P side The amount of large magnification MP. For example, as long as the same resolution power as that obtained with the equal-magnification projection optical system exemplified above is obtained, the numerical aperture NA on the mask side in the projection optical system PL with a magnification MP of 2 times becomes about 0.12, corresponding to Ground, the diffusion angle θ na of the projection light beam EL2 also increases by ±6.8° (width is 14.6°). However, the incident angle range of the polarization beam splitter PBS can be well polarized, which is about 14.6° in the case of FIG. 10, about 16° in the case of FIG. 18, and about 16.4° in the case of FIG. 20, and then In the case of FIG. 22, it is about 17.6°. In any case, since the spread angle θ na is covered, the projection exposure can be enlarged with good image quality.

As described above, when the reticle M is a cylindrical reticle, the blue light beam with good polarization separation characteristics is selected so as to cover the maximum angular range of the illumination beam EL1 of the illumination area IR irradiated on the reticle surface P1 in the circumferential direction The special angle enters the polarizing beam splitter PBS of the angle range. In addition, the Brewster angle θ B of the polarizing beam splitter PBS illustrated in FIGS. 17 to 22 is 50° or more. Even as shown in FIGS. 4 and 6, the optical axis BX1 of the illumination optical system and the projection optical system PL When the optical axis BX2 (or BX3) is parallel, each traveling direction of the illumination beam EL1 directed to the cylindrical mask M and the projection beam EL2 reflected on the mask surface in the XZ plane is inclined relative to the center plane CL , And can ensure good imaging performance.

In addition, in the above embodiments, the film body of hafnium oxide or the film body of zirconium oxide constituting the polarizing film 93 exhibits a higher refractive index nh relative to light in the ultraviolet region (wavelength below 400 nm), but as long as the refractive index nh The ratio nh/ns of the refractive index ns to the substrate (稜鏡91, 92) should be no less than 1.3, and the film body of titanium dioxide (TiO ₂ ) and the film body of tantalum pentoxide (Ta ₂ O ₅ ) can also be used High refractive index material.

41‧‧‧1/4 wavelength plate

91‧‧‧ No. 1

92‧‧‧ No. 2

93‧‧‧ Polarizing film

AX1‧‧‧1st axis

CL‧‧‧Center

D1‧‧‧The first side

D2‧‧‧The second side

D3‧‧‧The third side

D4‧‧‧Fourth

EL1‧‧‧Illumination beam

EL2‧‧‧Projection beam

M‧‧‧mask

PBS‧‧‧polarizing beam splitter

P1‧‧‧ Mask

Claims (13)

A polarizing beam splitter, comprising: a first 稜鏡; a second 鏜鏡, having a face facing the one of the first 騜鏡; and a polarizing film, in order to radiate from the first 騜鏡 to the first The incident beam of 2 稜鏡 is separated into a reflected beam reflected toward the first 稜鏡 side or a transmitted light beam transmitted toward the second 稜鏡 side according to the polarization state, and is provided in the first 稜鏡 and the second 稜鏡Between the opposing split surfaces, the first film body containing silicon dioxide and the second film body containing hafnium oxide are laminated in the film thickness direction, and the polarizing film is a Brewster with a thickness of 52.4°~57.3° In the form of a corneal film, a plurality of periodic layers are stacked in the thickness direction of the film, the layer system is composed of the first film body and the second film body, and the first film body is formed with respect to the incident light beam. The silicon dioxide with a wavelength λ of λ/4 wavelength film thickness, the second film body is provided on both sides in the film thickness direction via the first film body, and the wavelength λ with respect to the incident light beam is λ The /8 wavelength film thickness of the hafnium oxide is constituted by the principal ray radiated from the first beam to the center of the incident light beam of the polarizing film, and by being reflected by the polarizing film toward the first 1 The angle formed by the chief ray at the center of the reflected light beam on the side of the 珜鏡 is set to be greater than 90 degrees, the first 騜鏡 is composed of the first surface with the incident beam and the reflected on the polarizing film The second surface of the reflected light beam is made of quartz; the second tincture is made of quartz having a third surface that is non-parallel to the first surface and a fourth surface that is parallel to the second surface To make When viewed in a plane orthogonal to the dividing plane on which the polarizing film is provided, the first plane is set to be a perpendicular plane orthogonal to the principal ray passing through the center of the incident light beam; the second The plane is set to be a perpendicular plane orthogonal to the chief ray passing through the center of the aforementioned reflected light beam. A polarizing beam splitter as claimed in item 1 of the patent scope, wherein the angle between the first surface and the dividing surface provided with the polarizing film is set to the center of the incident light beam passing through the polarizing film The incident angle of the chief ray is the same. A polarizing beam splitter as claimed in item 1 or 2 of the patent application, wherein the polarizing film is fixed between the first 稜鏡 and the second 稜鏡 by an adhesive or an optical glue. An exposure device using a polarizing beam splitter according to item 1 or 2 of the patent scope, which has: a mask holding member that holds a reflective mask; an illumination optical module that directs the illumination beam to the aforementioned mask pattern; projection optics A module that projects the projection beam obtained by reflecting the illumination beam by the mask pattern on the object to be projected; and between the illumination optical module and the mask pattern and between the mask pattern and the The polarizing beam splitter and the wavelength plate between the projection optical modules; the incident angle of the illumination beam entering the polarizing film of the polarizing beam splitter is set to a predetermined angle range including a Brewster angle of 52.4° to 57.3° ; In a manner in which the polarizing beam splitter reflects the illumination beam toward the mask pattern and transmits the projection beam toward the projection optical module, the wavelength plate causes the polarizing beam splitter The aforementioned illumination beam polarizes and further polarizes the projection beam from the mask pattern. For example, in the exposure device according to item 4 of the patent application scope, the predetermined angle range is 46.8° or more and 61.4° or less. An exposure device as claimed in item 4 of the patent scope includes: a light source device that generates light having a wavelength below the i-line with a wavelength of 365 nm as the aforementioned illumination light beam. An exposure device as claimed in item 4 of the patent scope includes a light source device that generates harmonic laser light as the aforementioned illumination beam. An exposure device as claimed in item 4 of the patent scope includes a light source device that generates excimer laser light as the aforementioned illumination beam. As in the exposure apparatus according to any one of items 4 to 8 of the patent application range, wherein the mask pattern is arranged by bending a cylindrical surface from a predetermined central axis with a certain radius, the illumination optical module To make the projection beam reflected by the mask pattern and enter the polarizing beam splitter into a telecentric state, set the principal ray of the illumination beam that is illuminated by the polarizing beam splitter to the mask pattern to be curved to the circle The cylindrical mask-shaped mask pattern is non-telecentric in the circumferential direction. An exposure apparatus according to any one of items 4 to 8 of the patent application range, wherein the polarizing beam splitter and the wavelength plate are fixed by an adhesive or optical glue. The exposure device according to any one of the items 4 to 8 of the patent application scope, wherein the illumination optical module is provided with a plurality of illumination regions corresponding to the plurality of illumination regions formed on the mask pattern, and the plurality of illuminations The optical module directs the illumination beam to the plurality of illumination areas; the projection optical module is provided with a plurality of corresponding to the plurality of illumination optical modules The plurality of projection optical modules directs the plurality of projection beams reflected in the mask pattern of the plurality of illumination areas to the plurality of projection areas formed on the object to be projected; the polarizing beam splitter And the wavelength plate is provided with a plurality of corresponding to the plurality of illumination optical modules and the plurality of projection optical modules; further comprising polarization adjustment means for adjusting the polarization directions of the plurality of wavelength plates respectively. A method of manufacturing a device, comprising: using an exposure device according to any one of claims 4 to 8 to project the exposure pattern of the mask pattern corresponding to the circuit or wiring of the device onto the object to be projected; and by processing The projection exposure of the object to be projected, and the operation of forming a circuit or wiring of an element on the object to be projected. A method for manufacturing a device, comprising: projecting and exposing the mask pattern corresponding to the circuit or wiring of the device to the object to be projected using the exposure device of claim 11; and processing the projected exposure by processing the projected exposure The operation of forming the circuit or wiring of the element on the object to be projected.

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