KR102045713B1 - Polarization beam splitter, substrate processing apparatus, device manufacturing system, and device manufacturing method - Google Patents

Abstract

An illumination optical module, a projection optical module, a polarization beam splitter, and a substrate support member, wherein the polarization beam splitter includes a first prism, a second prism having a surface opposite to one surface of the first prism, The opposing of the first prism and the second prism in order to separate the light beam from the first prism toward the second prism into the reflected light beam reflecting to the first prism side or the transmitted light beam transmitted to the second prism side according to the polarization state. It has a polarizing film provided between one surface, and the polarizing film is larger than the refractive index of a 1st prism and a 2nd prism at center wavelength (lambda) so that Brewster angle in the center wavelength (lambda) of an illumination light beam may be 50 degrees or more. The first film body having a large first refractive index and the second film body having a second refractive index smaller than the first refractive index at a wavelength? Are repeatedly formed in a film thickness direction. When the angle formed in the circumferential direction of the first circumferential surface between the center plane passing through the first axis and the second axis and the chief ray passing through the center point of the illumination area among the chief rays of the illumination light beam is θ (θ ≠ 0), Provided is a substrate processing apparatus for setting an incidence angle β of a chief ray passing through a center point of an illumination region of the chief rays of illumination light incident on a polarizing beam splitter within a range of 45 ° ≦ β ≦ (45 ° + θ / 2).

Description

Polarizing beam splitter, substrate processing apparatus, device manufacturing system and device manufacturing method {POLARIZATION BEAM SPLITTER, SUBSTRATE PROCESSING APPARATUS, DEVICE MANUFACTURING SYSTEM, AND DEVICE MANUFACTURING METHOD}

The present invention relates to a polarizing beam splitter, a substrate processing apparatus, a device manufacturing system, and a device manufacturing method.

BACKGROUND ART Conventionally, as a substrate processing apparatus, exposure light is irradiated onto a reflective cylindrical reticle (mask), and the exposure light reflected from the mask is projected onto a photosensitive substrate (wafer). Exposure apparatus is known (for example, refer patent document 1). The exposure apparatus of patent document 1 has a projection optical system which projects the exposure light reflected from the mask on a wafer, and a projection optical system transmits exposure light in an imaging optical path according to the polarization state of incident exposure light. Or a polarizing beam splitter for reflecting or reflecting.

Patent Document 1: Japanese Patent Application Laid-Open No. 2007-227438

In the exposure apparatus of patent document 1, the illumination light beam from an illumination optical system is inclinedly irradiated on the cylindrical mask from the direction different from a projection optical system, and the exposure light (projection light beam) reflected by the mask is projected. It is comprised so that it may inject into an optical system. If the illumination optical system and the projection optical system are arranged in the same manner as in Patent Document 1, there is a problem that the utilization efficiency of the illumination light flux is low, and that the image quality of the mask pattern projected on the photosensitive substrate (wafer) is not very desirable. . As an illumination form which maintains good image quality efficiently, there exists a coaxial fall-off illumination system. This arrange | positions light splitting elements, such as a half mirror and a beam splitter, in the imaging optical path by a projection optical system, irradiates an illumination light beam to a mask via the light splitting element, and reflects the projection light velocity light splitting element reflected by the mask. It guides to the photosensitive substrate via the medium.

When the illumination light beam toward the mask is separated from the projection light beam from the mask by the fall-off illumination method, by using a polarizing beam splitter as the light splitting element, efficient exposure with low light amount loss of the illumination light beam and the projection light beam is possible. .

However, when the polarizing beam splitter reflects (or transmits) the illumination light beam, for example, and transmits (or reflects) the projection light beam, the polarization beam splitter is shared between the illumination optical system and the projection optical system, so that the polarization beam splitter is shared with the illumination optical system. There is a possibility that the projection optical system interferes physically.

Moreover, when using a polarizing beam splitter in the exposure apparatus of patent document 1, the polarizing film of a polarizing beam splitter reflects a part of incident incident light beam as a reflection light beam, and transmits a part and makes it a transmission light beam. At this time, the reflected light beam or the transmitted light beam is separated to generate an energy loss. For this reason, in order to suppress the energy loss of the reflected light beam or the transmitted light beam by separation, it is preferable that the incident light beam which injects into a polarizing film is made into the laser beam of which wavelength and phase matched.

However, laser light has a high energy density. For this reason, when making incident light beam into a laser beam, when the reflectance of the reflected light beam in a polarizing film and the transmittance of a transmission light beam are low, the energy of a laser beam will be absorbed in a polarizing film, and the load provided to a polarizing film will become large. Thereby, when light with high energy density, such as a laser beam, is used as an incident light beam, since tolerance of the polarizing film of a polarizing beam splitter will fall easily, it may become difficult to isolate | separate an incident light beam suitably.

Embodiments of the present invention have been made in view of the above problems, and an object thereof is to suppress physical interference between the illumination optical system and the projection optical system even when the illumination light beam and the projection light beam are separated by a polarizing beam splitter, thereby suppressing the illumination optical system and It is providing the polarizing beam splitter, the substrate processing apparatus (exposure apparatus), the device manufacturing system, and the device manufacturing method which can arrange | position a projection optical system easily.

Moreover, the form of this invention was made | formed in view of the said subject, The objective is to make a reflected light beam by reflecting a part of incident light beam, reducing the load applied to a polarizing film, even the incident light beam with high energy density, A polarizing beam splitter, a substrate processing apparatus, a device manufacturing system, and a device manufacturing method which transmit a part of incident light beam to make a transmitted light beam.

According to the first aspect of the present invention, a projection is obtained by reflecting a mask holding member holding a reflective mask and an incident illumination light beam toward the mask, while the illumination light beam is reflected by the mask. A beam splitter for transmitting light beams, an illumination optical module for injecting the illumination light beams into the beam splitters, and a projection optical module for projecting the projection light beams passing through the beam splitters onto a light-sensitive substrate; The illumination optical system for guiding the illumination light beam to the mask includes the illumination optical module and the beam splitter, and the projection optical system for guiding the projection light beam to the substrate includes the projection optical module and the beam splitter. And the illumination optical module and the beam splitter are between the mask and the projection optical module. The substrate processing apparatus (exposure apparatus) which is provided is provided.

According to the 2nd aspect of this invention, the device manufacturing system provided with the substrate processing apparatus which concerns on the 1st aspect of this invention, and the substrate supply apparatus which supplies the said board | substrate to the said substrate processing apparatus are provided.

According to the 3rd aspect of this invention, the pattern of the said mask is formed on the said board | substrate by carrying out the projection exposure of the said board | substrate using the substrate processing apparatus which concerns on the 1st aspect of this invention, and processing the said projection-exposed board | substrate. There is provided a device manufacturing method comprising forming on the above.

According to the fourth aspect of the present invention, a mask holding member for holding a reflective mask and a light beam incident therethrough are transmitted toward the mask while reflecting the projection light beam obtained by reflecting the illumination light beam by the mask. A beam splitter, an illumination optical module for injecting the illumination light beam into the beam splitter, and a projection optical module for projecting the projection light beam reflected by the beam splitter onto a light-sensitive substrate, wherein the illumination light beam is used as the mask. The illumination optical system for guiding to the light includes the illumination optical module and the beam splitter, and the projection optical system for guiding the projection light beam to the substrate includes the projection optical module and the beam splitter, and the illumination optical module and the The beam splitter is provided between the mask and the projection optical module. It is provided a substrate processing apparatus (exposure apparatus).

According to the fifth aspect of the present invention, there is provided a polarization state of a first prism, a second prism having a surface opposite to one surface of the first prism, and an incident light beam directed from the first prism toward the second prism. The silicon dioxide is disposed between the surface facing the first prism and the second prism so as to be separated into the reflected light beam reflected toward the first prism side or the transmitted light beam transmitted to the second prism side. There is provided a polarizing beam splitter comprising a polarizing film obtained by laminating a first film having a main component and a second film having a hafnium oxide as a main component in the film thickness direction.

According to the sixth aspect of the present invention, a cylindrical mask in which a reflective mask pattern is formed along a first circumferential surface that becomes a first radius of curvature from a first axis is rotated around the first axis, thereby forming an image of the mask pattern ( A substrate processing apparatus for projecting and exposing i) to a photosensitive substrate, comprising: an illumination optical module for irradiating an illumination light beam toward an illumination region set on the mask pattern of the cylindrical mask, and the illumination Projection optics for injecting the projection light beam reflected from the illumination region on the mask pattern image by the irradiation of the light beam to form an image of the mask pattern in the projection region set on the substrate In the optical path between the module and the illumination optical module and the mask pattern, and in the optical path between the mask pattern and the projection optical module. A polarizing beam splitter disposed to reflect the illumination light beam from the illumination optical module and reflect it toward the mask pattern, while injecting the projection light beam from the mask pattern and transmitting it toward the projection optical module; A second axis disposed parallel to the first axis of the cylindrical mask, the substrate being bent and supported along a second circumferential surface which becomes a second radius of curvature from the second axis, and around the second axis The illumination optical module having a cylindrical substrate support member which rotates to move the substrate in a circumferential direction along the second circumferential surface, and wherein a surface passing through the first axis and the second axis is a center plane. And the polarizing beam splitter are between the cylindrical mask and the projection optical module, and on the center plane. The polarizing beam splitter is arranged so as to deviate to one side, and the polarizing beam splitter includes a first prism, a second prism having a surface opposite to one surface of the first prism, and a light beam directed from the first prism to the second prism. Is provided between the opposing surface of the first prism and the second prism in order to separate the light into the reflected light beam reflected to the first prism side or the transmitted light beam transmitted to the second prism side according to the polarization state. The polarizing film is larger than the refractive index of the said 1st prism and the said 2nd prism in the said center wavelength (lambda) so that Brewster angle in the center wavelength (lambda) of the said illumination light beam may be 50 degrees or more. A film thickness direction between the first film body having a first refractive index and the second film body having a second refractive index smaller than the first refractive index at the wavelength? And a plurality of repetitive layers, wherein the angle formed in the circumferential direction of the first circumferential surface between the chief ray passing through the center point of the illumination region and the center plane among the chief rays of the illumination light beam is θ (θ ≠ 0). The substrate processing apparatus which set the incidence angle β of the chief ray passing through the center point of the illumination region among the chief rays of the illumination light beam incident on the polarizing beam splitter within the range of 45 ° ≦ β ≦ (45 ° + θ / 2) Is provided.

According to the 7th aspect of this invention, the device manufacturing system provided with the substrate processing apparatus which concerns on the 6th aspect of this invention, and the substrate supply apparatus which supplies the said to-be-projected object to the said substrate processing apparatus are provided.

According to the eighth aspect of the present invention, a pattern of the mask is formed by subjecting the projected object to the projection object using the substrate processing apparatus according to the sixth aspect of the present invention and by processing the projected object. A device manufacturing method is provided that includes forming.

According to the aspect of the present invention, even when the illumination light beam and the projection light beam are separated by a beam splitter shared by the illumination optical system and the projection optical system, physical interference between the illumination optical system and the projection optical system is suppressed, and the illumination optical system and the projection optical system are easily provided. It is possible to provide a polarizing beam splitter, a substrate processing apparatus, a device manufacturing system, and a device manufacturing method which can be arranged in such a way.

Moreover, according to the aspect of this invention, the polarizing beam splitter, a substrate processing apparatus, which reflects a part of incident light beam as a reflected light beam, and transmits a part of incident light beam as a transmitted light beam, reducing the load applied to a polarizing film, A device manufacturing system and a device manufacturing method can be provided.

FIG. 1: is a figure which shows the structure of the device manufacturing system of 1st Embodiment.
FIG. 2 is a diagram illustrating an entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.
3 is a diagram illustrating an arrangement of an illumination region and a projection region of the exposure apparatus shown in FIG. 2.
4 is a diagram illustrating the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.
It is a figure which shows the illumination light beam and projection light beam by a mask.
5B is a diagram illustrating a fourth relay lens viewed from the polarization beam splitter.
6 is a diagram showing the illumination light flux and the projection light flux in the polarization beam splitter.
7 is a diagram showing an arrangement area in which the illumination optical system can be arranged.
FIG. 8: is a figure which shows the structure around the polarizing film of the polarizing beam splitter of 1st Embodiment.
It is a figure which shows the structure around the polarizing film of the polarizing beam splitter of the comparative example which concerns on 1st Embodiment.
FIG. 10 is a graph showing the transmission characteristics and the reflection characteristics of the polarization beam splitter shown in FIG. 8.
FIG. 11 is a graph showing the transmission characteristics and the reflection characteristics of the polarization beam splitter shown in FIG. 9.
12 is a flowchart illustrating a device manufacturing method of the first embodiment.
FIG. 13: is a figure which shows the whole structure of the exposure apparatus (substrate processing apparatus) of 2nd Embodiment.
FIG. 14: is a figure which shows the structure of the exposure apparatus (substrate processing apparatus) of 3rd Embodiment.
FIG. 15: is a figure which shows the whole structure of the exposure apparatus (substrate processing apparatus) of 4th Embodiment.
FIG. 16: is a figure which shows the structure of the exposure apparatus (substrate processing apparatus) of 5th Embodiment.
It is a figure which shows the structure around the polarizing film of the polarizing beam splitter of 6th Embodiment.
FIG. 18 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in FIG. 17.
FIG. 19: is a figure which shows the structure around the polarizing film of the polarizing beam splitter of 7th Embodiment.
20 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in FIG. 19.
FIG. 21: is a figure which shows the structure around the polarizing film of the polarizing beam splitter of 8th Embodiment.
FIG. 22 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in FIG. 21.

EMBODIMENT OF THE INVENTION The form (embodiment) for implementing this invention is demonstrated in detail, referring drawings. This invention is not limited by the content described in the following embodiment. In addition, the component described below includes the thing which a person skilled in the art can easily think, and the substantially same thing. In addition, the components described below can be appropriately combined. Moreover, various omission, substitution, or a change of a component can be made in the range which does not deviate from the summary of this invention.

[First Embodiment]

The polarizing beam splitter of 1st Embodiment is provided in the exposure apparatus as a substrate processing apparatus which exposes to the photosensitive substrate which is a to-be-projected body. Moreover, the exposure apparatus is assembled to the device manufacturing system which manufactures a device by giving various processes to the board | substrate after exposure. First, a device manufacturing system will be described.

<Device manufacturing system>

FIG. 1: is a figure which shows the structure of the device manufacturing system of 1st Embodiment. The device manufacturing system 1 shown in FIG. 1 is a line (flexible display manufacturing line) which manufactures the flexible display as a device. As a flexible display, organic electroluminescent display etc. are mentioned, for example. This device manufacturing system 1 sends out the board | substrate P from the supply roll FR1 which wound the flexible board | substrate P in roll shape, and continuously performs various processes with respect to the board | substrate P sent out. After implementation, it is a so-called roll-to-roll method in which the substrate P after the treatment is wound on the recovery roll FR2 as a flexible device. In the device manufacturing system 1 of 1st Embodiment, the board | substrate P which is a film-shaped sheet is sent out from the supply roll FR1, and the board | substrate P sent out from the supply roll FR1 is sequentially and an example until it is wound up by the collection roll FR2 through n processing apparatuses U1, U2, U3, U4, U5, ..., Un are shown. First, the board | substrate P used as the process target of the device manufacturing system 1 is demonstrated.

As the board | substrate P, foil (foil) etc. which consist of metals or alloys, such as a resin film and stainless steel, are used, for example. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, It contains one or two or more of vinyl acetate resins.

The substrate P is preferably selected such that the coefficient of thermal expansion is not remarkably large so that the amount of deformation due to heat received in various processes performed on the substrate P can be substantially ignored. The thermal expansion coefficient may be set smaller than the threshold value according to the process temperature, for example, by mixing an inorganic filler into the resin film. The inorganic filler may be titanium oxide, zinc oxide, alumina, silicon oxide or the like, for example. Moreover, the board | substrate P may be the single layer body of the very thin glass of about 100 micrometers thickness manufactured by the float method, etc., or the laminated body which bonded the said resin film, foil, etc. to this very thin glass may be sufficient. good.

The board | substrate P comprised in this way is wound in roll shape, and becomes supply roll FR1, and this supply roll FR1 is attached to the device manufacturing system 1. The device manufacturing system 1 equipped with the supply roll FR1 repeatedly performs the various processes for manufacturing a device with respect to the board | substrate P sent out from the supply roll FR1. For this reason, the board | substrate P after a process will be in the state which the some device connected. That is, the board | substrate P sent out from the supply roll FR1 becomes a board | substrate for obtaining a multifaced. Moreover, the board | substrate P modified the surface in advance by predetermined | prescribed preprocessing, and activated, or formed the fine partition structure (uneven structure) for precision patterning on the surface. It may be okay.

The board | substrate P after a process is wound up in roll shape, and is collect | recovered as roll for recovery FR2. The recovery roll FR2 is attached to a dicing apparatus (not shown). The dicing apparatus equipped with the collection roll FR2 sets a plurality of devices by dividing (dicing) the substrate P after processing for each device. The dimension of the board | substrate P is about 10 cm-about 2m in the width direction (the direction which becomes short), for example, and the dimension of the longitudinal direction (the direction which becomes long) is 10 m or more. . In addition, the dimension of the board | substrate P is not limited to said dimension.

With reference to FIG. 1, the device manufacturing system is demonstrated next. In FIG. 1, it is a rectangular coordinate system which a X direction, a Y direction, and a Z direction orthogonally cross. The X direction is a direction connecting the supply roll FR1 and the recovery roll FR2 in the horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane. The Y direction is an axial direction of the supply roll FR1 and the recovery roll FR2. Z direction is the direction (vertical direction) orthogonal to a X direction and a Y direction.

The device manufacturing system 1 is a processing apparatus U1-Un which performs various processes with respect to the board | substrate supply apparatus 2 which supplies the board | substrate P, and the board | substrate P supplied by the board | substrate supply apparatus 2. ), A substrate recovery device 4 for recovering the substrate P processed by the processing devices U1 to Un, and an upper control device for controlling each device of the device manufacturing system 1 ( 5).

The supply roll FR1 is rotatably attached to the board | substrate supply apparatus 2. The board | substrate supply apparatus 2 has the edge position which adjusts the position in the width direction (Y direction) of the drive roller R1 which sends the board | substrate P from the attached supply roll FR1, and the board | substrate P. It has a controller EPC1. The drive roller R1 rotates while sandwiching both front and back sides of the substrate P, and sends the substrate P in the conveying direction from the supply roll FR1 to the recovery roll FR2, thereby providing a substrate. (P) is supplied to the processing apparatus U1-Un. At this time, the edge position controller EPC1 has the width | variety of the board | substrate P so that the position in the edge part (edge) of the width direction of the board | substrate P may be in the range of +/- 10 micrometers-about several tens of micrometers with respect to a target position. Direction, and the position in the width direction of the substrate P is corrected.

The recovery roll FR2 is rotatably mounted to the substrate recovery device 4. The board | substrate collection | recovery apparatus 4 is an edge position which adjusts the position in the width direction (Y direction) of the drive roller R2 which pulls the board | substrate P after a process to the roll FR2 side for collection | recovery, and the board | substrate P. It has a controller EPC2. The board | substrate collection | recovery apparatus 4 rotates, holding both sides of the front and back of the board | substrate P by the drive roller R2, pulling the board | substrate P to a conveyance direction, and collecting roll FR2. By rotating, the substrate P is wound up. At this time, the edge position controller EPC2 is configured in the same manner as the edge position controller EPC1, and the edge position controller EPC2 is disposed in the width direction of the substrate P such that the end portion (edge) in the width direction of the substrate P does not deviate from the width direction. Correct the position of.

The processing apparatus U1 is a coating apparatus which applies a photosensitive functional liquid to the surface of the board | substrate P supplied from the board | substrate supply apparatus 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material, a UV curable resin liquid, or the like is used. The processing apparatus U1 is provided with the coating mechanism Gp1 and the drying mechanism Gp2 in order from the upstream side of the conveyance direction of the board | substrate P. FIG. The coating mechanism Gp1 has the cylinder roller DR1 by which the board | substrate P is wound, and the application roller DR2 which opposes the cylinder roller DR1. The coating mechanism Gp1 sandwiches and holds the board | substrate P by the cylinder roller DR1 and the coating roller DR2 in the state which wound the supplied board | substrate P on the cylinder roller DR1. And application | coating mechanism Gp1 apply | coats the photosensitive functional liquid with application | coating roller DR2, moving the board | substrate P to a conveyance direction by rotating cylinder roller DR1 and application | coating roller DR2. The drying mechanism Gp2 blows out drying air such as hot air or dry air, removes the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid. (P) A photosensitive functional layer is formed on it.

The processing apparatus U2 sets the substrate P conveyed from the processing apparatus U1 at a predetermined temperature (for example, several tens to about 120 degrees Celsius) so as to stabilize the photosensitive functional layer formed on the surface of the substrate P. It is a heating device to heat up. The processing apparatus U2 is provided with the heating chamber HA1 and the cooling chamber HA2 in order from the upstream side of the conveyance direction of the board | substrate P. As shown in FIG. The heating chamber HA1 is provided with the some roller and the some air turn bar inside, and the some roller and the some air turn bar comprise the conveyance path | route of the board | substrate P. As shown in FIG. The plurality of rollers are provided in rolling contact with the rear surface of the substrate P, and the plurality of air turn bars are provided in a non-contact state on the surface side of the substrate P. FIG. The plurality of rollers and the plurality of air turn bars are arranged to form a meandering (tortuous) conveying path so as to lengthen the conveying path of the substrate P. The board | substrate P which passes through the inside of heating chamber HA1 is heated to predetermined temperature, conveyed along a meandering conveyance path | route. The cooling chamber HA2 cools the board | substrate P to environmental temperature so that the temperature of the board | substrate P heated by the heating chamber HA1 may match the environmental temperature of a post process (processing apparatus U3). In the cooling chamber HA2, a plurality of rollers are provided therein, and the plurality of rollers are arranged in a meandering conveying path so as to lengthen the conveying path of the substrate P, similarly to the heating chamber HA1. It is. The board | substrate P passing through the cooling chamber HA2 is cooled, conveying along a meandering conveyance path | route. On the downstream side in the conveyance direction of the cooling chamber HA2, the drive roller R3 is provided, and the drive roller R3 rotates while holding the board | substrate P which passed through the cooling chamber HA2, and rotates, The board | substrate P is supplied toward the processing apparatus U3.

The processing apparatus (substrate processing apparatus) U3 projects a pattern such as a circuit or wiring for a display onto the substrate (photosensitive substrate) P supplied with the photosensitive functional layer on the surface supplied from the processing apparatus U2. It is a scanning exposure apparatus to expose. Although the details will be described later, the processing apparatus U3 illuminates the illumination light flux on the reflective cylindrical mask M, and the substrate support drum which can rotate the projection light flux obtained by reflecting the illumination light flux by the mask M. Projection exposure is performed on the board | substrate P supported by the outer peripheral surface of (25). The processing apparatus U3 adjusts the position in the width direction (Y direction) of the drive roller R4 and the board | substrate P which send the board | substrate P supplied from the processing apparatus U2 to the downstream side of a conveyance direction. It has an edge position controller (EPC3). The driving roller R4 rotates while sandwiching both front and back sides of the substrate P, and sends the substrate P toward the downstream side in the conveying direction, thereby feeding the substrate P toward the exposure position. Edge position controller EPC3 is comprised similarly to edge position controller EPC1, and corrects the position in the width direction of board | substrate P so that the width direction of board | substrate P at an exposure position may become a target position. .

Moreover, the processing apparatus U3 has two sets of drive rollers R5 and R6 which send the board | substrate P to the downstream side of a conveyance direction, in the state which gave the board | substrate P after exposure. Two sets of driving rollers R5 and R6 are arranged at predetermined intervals in the conveyance direction of the substrate P. As shown in FIG. The drive roller R5 clamps and rotates the upstream side of the board | substrate P to be conveyed, and the drive roller R6 clamps and rotates the downstream side of the board | substrate P to be conveyed, and rotates it, The substrate P is supplied toward the processing apparatus U4. At this time, since the sagging of the board | substrate P is provided, it can absorb the fluctuation | variation of the conveyance speed which generate | occur | produces in the downstream side of a conveyance direction rather than the drive roller R6, The influence of the exposure treatment can be insulated. Moreover, in the processing apparatus U3, the alignment mark etc. previously formed in the board | substrate P, etc. in order to relatively position (align) the image of a part of the mask pattern of the mask M, and the board | substrate P. Alignment microscopes AM1 and AM2 which detect this are provided.

The processing apparatus U4 is a wet processing apparatus that performs wet development, electroless plating, and the like on the substrate P after exposure conveyed from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, BT3 layered in the vertical direction (Z direction), and the some roller which conveys the board | substrate P inside. The some roller is arrange | positioned so that it may become the conveyance path | route which the board | substrate P passes in order inside the three process tanks BT1, BT2, and BT3. On the downstream side in the conveyance direction of the processing tank BT3, the drive roller R7 is provided, and the driving roller R7 is rotated while holding the board | substrate P which passed the processing tank BT3 between, The board | substrate P is supplied toward the processing apparatus U5.

Although illustration is abbreviate | omitted, the processing apparatus U5 is a drying apparatus which dries the board | substrate P conveyed from the processing apparatus U4. The processing apparatus U5 adjusts the moisture content which adheres to the board | substrate P wet-processed by the processing apparatus U4 to predetermined moisture content. The board | substrate P dried by the processing apparatus U5 is conveyed to the processing apparatus Un through several processing apparatuses. And after processing by the processing apparatus Un, the board | substrate P is wound up by the collection roll FR2 of the board | substrate collection apparatus 4.

The host controller 5 collectively controls the substrate supply device 2, the substrate recovery device 4, and the plurality of processing devices U1 to Un. The host controller 5 controls the substrate supply device 2 and the substrate recovery device 4 to convey the substrate P from the substrate supply device 2 toward the substrate recovery device 4. In addition, the host controller 5 controls the plurality of processing apparatuses U1 to Un to execute various processes for the substrate P while synchronizing with the transfer of the substrate P. FIG.

<Exposure apparatus (substrate processing apparatus)>

Next, the structure of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of 1st Embodiment is demonstrated with reference to FIGS. FIG. 2 is a diagram illustrating an entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. 3 is a diagram illustrating an arrangement of an illumination region and a projection region of the exposure apparatus shown in FIG. 2. 4 is a diagram illustrating the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2. It is a figure which shows the illumination light beam and projection light beam by a mask. 5B is a diagram illustrating a fourth relay lens viewed from the polarization beam splitter. 6 is a diagram showing the illumination light flux and the projection light flux in the polarization beam splitter. 7 is a diagram showing an arrangement area in which the illumination optical system can be arranged.

The exposure apparatus U3 shown in FIG. 2 is what is called a scanning exposure apparatus, The image of the mask pattern formed in the outer peripheral surface of the cylindrical mask M, conveying the board | substrate P to a conveyance direction (scanning direction). This is projected and exposed on the surface of the substrate P. 2 and 4 to 7, the X-direction, the Y-direction, and the Z-direction are orthogonal to the rectangular coordinate system, and the rectangular coordinate system is the same as that of FIG.

First, the mask M used for the exposure apparatus U3 is demonstrated. The mask M is, for example, a reflective cylindrical mask using a metal cylindrical body. The mask M is formed from a cylindrical body having an outer circumferential surface (circumferential surface) that is a radius of curvature Rm around the first axis AX1 extending in the Y direction, and has a constant thickness in the radial direction. The peripheral surface of the mask M is the mask surface P1 in which the predetermined | prescribed mask pattern was formed. The mask surface P1 includes a high reflection portion that reflects light fluxes in a predetermined direction with high efficiency, and a reflection suppressing portion (or light absorbing portion) that does not reflect light fluxes in a predetermined direction or reflects at low efficiency, and includes a mask pattern. Is formed of a high reflection portion and a reflection suppression portion. Since this mask M is a cylindrical metal body, it can be produced in low cost.

In addition, the mask M may be provided with all or part of the panel pattern corresponding to one display device, or may obtain the surface if the panel pattern corresponding to a some display device was formed. In the mask M, a plurality of panel patterns may be repeatedly formed in the circumferential direction around the first axis AX1, and a plurality of small panel patterns may be repeated in a direction parallel to the first axis AX1. The plurality may be formed. In addition, the mask M may be provided with a panel pattern of the first display device and a panel pattern of a second display device having a different size from the first display device. In addition, the mask M should just have the peripheral surface used as the curvature radius Rm centering on the 1st axis | shaft AX1, and is not limited to the shape of a cylindrical body. For example, the mask M may be a circular plate having a circumferential surface. Moreover, the mask M may be a thin plate shape, and may be attached to a cylindrical base material or a cylindrical frame so that the thin plate-shaped mask M may be curved and have a circumferential surface.

Next, the exposure apparatus U3 shown in FIG. 2 is demonstrated. The exposure apparatus U3 includes the mask holding mechanism 11, the substrate support mechanism 12, and illumination, in addition to the above-described driving rollers R4 to R6, the edge position controller EPC3, and the alignment microscopes AM1 and AM2. The optical system IL, the projection optical system PL, and the lower control device 16 are included. The exposure apparatus U3 guides the illumination light beam EL1 emitted from the light source device 13 in the illumination optical system IL and the projection optical system PL, thereby holding the mask M held by the mask holding mechanism 11. ), The image of the mask pattern is projected onto the substrate P supported by the substrate support mechanism 12.

The lower control device 16 controls each unit of the exposure apparatus U3 and causes each unit to execute a process. The lower control device 16 may be part or all of the upper control device 5 of the device manufacturing system 1. In addition, the lower control apparatus 16 may be controlled by the upper control apparatus 5 and may be a device different from the upper control apparatus 5. The lower control apparatus 16 includes a computer, for example.

The mask holding mechanism 11 has a mask holding drum (mask holding member) 21 for holding the mask M and a first drive portion 22 for rotating the mask holding drum 21. The mask holding drum 21 holds the mask M such that the first axis AX1 of the mask M is the rotation center. The 1st drive part 22 is connected to the lower control apparatus 16, and rotates the mask holding | maintenance drum 21 about the 1st axis | shaft AX1 to a rotation center.

In addition, although the mask holding mechanism 11 hold | maintained the mask M of a cylindrical body by the mask holding drum 21, it is not limited to this structure. The mask holding mechanism 11 may wind and hold the thin plate-shaped mask M along the outer circumferential surface of the mask holding drum 21. In addition, the mask holding mechanism 11 may hold the mask M which becomes an arc-shaped board | plate material on the outer peripheral surface of the mask holding drum 21. As shown in FIG.

The board | substrate support mechanism 12 is a pair of cylindrical board | substrate support drum (substrate support member) 25 which supports the board | substrate P, the 2nd drive part 26 which rotates the board | substrate support drum 25, and a pair Air turn bars ATB1 and ATB2 and a pair of guide rollers 27 and 28. The board | substrate supporting drum 25 is formed in the cylindrical shape which has the outer peripheral surface (circumferential surface) used as the curvature radius Rfa centering on the 2nd axis | shaft AX2 extending in a Y direction. Here, the 1st axis | shaft AX1 and the 2nd axis | shaft AX2 are mutually parallel, and the surface which passes through the 1st axis | shaft AX1 and the 2nd axis | shaft AX2 is made into the center plane CL. A part of the circumferential surface of the board | substrate support drum 25 becomes the support surface P2 which supports the board | substrate P. As shown in FIG. That is, the board | substrate support drum 25 supports the board | substrate P by winding the board | substrate P on the support surface P2. The 2nd drive part 26 is connected to the lower control apparatus 16, and rotates the board | substrate support drum 25 about the 2nd axis AX2 to the rotation center. The pair of air turn bars ATB1 and ATB2 are provided on the upstream side and the downstream side of the conveyance direction of the substrate P with the substrate supporting drum 25 interposed therebetween. The pair of air turn bars ATB1 and ATB2 are provided on the surface side of the substrate P and are disposed on the lower side than the support surface P2 of the substrate support drum 25 in the vertical direction (Z direction). . The pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side of the conveyance direction of the board | substrate P, respectively, between a pair of air turn bars ATB1 and ATB2. The pair of guide rollers 27 and 28 guide the substrate P conveyed from the driving roller R4 by one of the guide rollers 27 to the air turn bar ATB1, and the other guide rollers ( 28 guides the substrate P conveyed from the air turn bar ATB2 to the driving roller R5.

Therefore, the board | substrate support mechanism 12 guides the board | substrate P conveyed from the drive roller R4 to the air turn bar ATB1 with the guide roller 27, and passed the air turn bar ATB1. The substrate P is introduced into the substrate supporting drum 25. The board | substrate support mechanism 12 rotates the board | substrate support drum 25 by the 2nd drive part 26, and the board | substrate P introduce | transduced into the board | substrate support drum 25 is the support surface of the board | substrate support drum 25. While supporting at P2, it conveys toward the air turn bar ATB2. The board | substrate support mechanism 12 guides the board | substrate P conveyed by the air turn bar ATB2 to the guide roller 28 by the air turn bar ATB2, and the board | substrate which passed the guide roller 28 ( P) is guided to the drive roller R5.

At this time, the lower control apparatus 16 connected to the 1st drive part 22 and the 2nd drive part 26 rotates the mask holding drum 21 and the board | substrate support drum 25 synchronously by predetermined rotation speed ratio. Thus, the image of the mask pattern formed on the mask surface P1 of the mask M is curved along the surface (circumferential surface) of the substrate P wound around the support surface P2 of the substrate support drum 25. On one surface) is successively repeatedly projected and exposed.

The light source device 13 emits the illumination light beam EL1 illuminated by the mask M. As shown in FIG. The light source device 13 has a light source 31 and a light guide member 32. The light source 31 is a light source that emits light of a predetermined wavelength that gives a chemical action to the photosensitive layer formed on the surface of the substrate P. FIG. For example, a lamp light source such as a mercury lamp, a laser diode, a light emitting diode (LED), or the like is used for the light source 31. The illumination light emitted from the light source 31 is, for example, ultraviolet rays (g-ray, h-ray, i-ray) emitted from the lamp light source, far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm), and ArF excimer laser. Light (wavelength 193 nm) and the like. Here, it is preferable that the light source 31 emits the illumination light beam EL1 containing the wavelength below i line | wire (wavelength of 365 nm). A third harmonic laser of YAG that emits laser light with a wavelength of 355 nm, and a fourth harmonic laser of YAG that emits laser light with a wavelength of 266 nm, as the light source 31 for generating the illumination light beam EL1 that is a wavelength below i-line. Or a KrF excimer laser for emitting laser light having a wavelength of 248 nm can be used.

Here, the illumination light beam EL1 radiate | emitted from the light source device 13 injects into the polarizing beam splitter PBS mentioned later. The illumination beam EL1 reflects almost all of the incident illumination beam EL1 at the polarization beam splitter PBS so as to suppress the generation of energy loss due to separation of the illumination beam EL1 by the polarization beam splitter PBS. It is preferable to set it as the luminous flux. Polarizing beam splitter PBS reflects the light beam used as linearly polarized light of S polarization, and transmits the light beam used as linearly polarized light of P-polarized light. For this reason, the light source device 13 emits the illumination light beam EL1 in which the illumination light beam EL1 incident on the polarization beam splitter PBS becomes the light beam of linearly polarized light (S polarization). Accordingly, the light source device 13 emits polarized laser light whose wavelength and phase coincide with the polarizing beam splitter PBS.

The light guide member 32 guides the illumination light beam EL1 radiate | emitted from the light source 31 to illumination optical system IL. The light guide member 32 is comprised from the optical fiber or the relay module using a mirror. In addition, when the illumination optical system IL is provided with two or more illumination optical systems IL, the light guide member 32 isolate | separates the illumination light beam EL1 from the light source 31 in plurality, and divides the several illumination light beam EL1 into the several illumination optical system ( IL). In addition, when the light beam emitted from the light source 31 is a polarization laser beam, the light guide member 32 uses a polarization holding fiber (polarization surface preservation fiber) as an optical fiber, The light guide may be performed while maintaining the polarization state of the polarized laser light by the polarization maintaining fiber.

Here, as shown in FIG. 3, the exposure apparatus U3 of 1st Embodiment is the exposure apparatus which assumed what is called a multi-lens system. 3, the top view (left figure of FIG. 3) which looked at illumination region IR on the cylindrical mask M hold | maintained by the mask holding drum 21 from the -Z side, and the board | substrate supporting drum ( The top view (the right figure of FIG. 3) which looked at the projection area | region PA on the board | substrate P supported by 25 from the + Z side is shown. 3, the code | symbol Xs shows the moving direction (rotation direction) of the mask holding drum 21 and the board | substrate supporting drum 25. As shown in FIG. The exposure apparatus U3 of the multi-lens system illuminates the illumination light beam EL1 in the illumination area | regions IR1-IR6 of the plurality (for example, six pieces in 1st embodiment) on the mask M, respectively. And projecting the plurality of projection light beams EL2 obtained by reflecting each of the illumination light beams EL1 to the respective illumination regions IR1 to IR6 on the substrate P (for example, six in the first embodiment). Projection exposure is performed on the areas PA1 to PA6.

First, the some illumination area | regions IR1-IR6 illuminated by illumination optical system IL are demonstrated. As shown in FIG. 3, the some illumination area | regions IR1-IR6 are arrange | positioned in two rows in the rotation direction with the center plane CL interposed, and are located on the mask M on the upstream side of a rotation direction. The odd first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are disposed, and the even second second illumination region is disposed on the mask M on the downstream side in the rotational direction. Illumination area IR2, 4th illumination area IR4, and 6th illumination area IR6 are arrange | positioned. Each illumination area | region IR1-IR6 becomes an elongate trapezoidal shape (rectangular shape) which has the parallel short side and long side extended in the axial direction (Y direction) of the mask M. As shown to FIG. At this time, each of the trapezoidal illumination regions IR1 to IR6 is a region where the short side is located on the center plane CL side and the long side is located on the outside. The 1st illumination area | region IR1, the 3rd illumination area | region IR3, and the 5th illumination area | region IR5 are arrange | positioned at the axial direction at predetermined intervals. Moreover, 2nd illumination area | region IR2, 4th illumination area | region IR4, and 6th illumination area | region IR6 are arrange | positioned at the axial direction at predetermined intervals. At this time, 2nd illumination area | region IR2 is arrange | positioned between 1st illumination area | region IR1 and 3rd illumination area | region IR3 in an axial direction. Similarly, 3rd illumination area | region IR3 is arrange | positioned between 2nd illumination area | region IR2 and 4th illumination area | region IR4 in an axial direction. 4th illumination area | region IR4 is arrange | positioned between 3rd illumination area | region IR3 and 5th illumination area | region IR5 in an axial direction. 5th illumination area | region IR5 is arrange | positioned between 4th illumination area | region IR4 and 6th illumination area | region IR6 in an axial direction. Each illumination area | region IR1-IR6 is arrange | positioned so that the triangular part of the quadrilateral part of the trapezoid-shaped illumination area | region IR next to each other may overlap (overlap), seeing from the circumferential direction of the mask M. FIG. have. In addition, in 1st Embodiment, although each illumination area | region IR1-IR6 was made into the trapezoidal area | region, you may be a rectangular area | region.

Moreover, the mask M has the pattern formation area | region A3 in which the mask pattern is formed, and the pattern non-formation area | region A4 in which the mask pattern is not formed. The pattern non-formation area | region A4 is an area which is hard to reflect which absorbs illumination light beam EL1, and is arrange | positioned surrounding the pattern formation area | region A3 in frame shape. The first to sixth illumination regions IR1 to IR6 are disposed to cover the entire width of the pattern formation region A3 in the Y direction.

The illumination optical system IL is provided in plurality (for example, six pieces in 1st Embodiment) according to some illumination area | regions IR1-IR6. The illumination light beams EL1 from the light source device 13 enter the plurality of illumination optical systems IL1 to IL6, respectively. Each illumination optical system IL1-IL6 guides each illumination light beam EL1 incident from the light source device 13 to each illumination region IR1-IR6, respectively. That is, the 1st illumination optical system IL1 guides illumination light beam EL1 to 1st illumination area | region IR1, and similarly, 2nd-6th illumination optical systems IL2-IL6 guide illumination light beam EL1. Guide to the second to sixth illumination regions IR2 to IR6. The plurality of illumination optical systems IL1 to IL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. The plurality of illumination optical systems IL1 to IL6 are disposed on the side (left side in FIG. 2) where the first, third, and fifth illumination regions IR1, IR3, IR5 are disposed with the center plane CL interposed therebetween. The 1st illumination optical system IL1, the 3rd illumination optical system IL3, and the 5th illumination optical system IL5 are arrange | positioned. The 1st illumination optical system IL1, the 3rd illumination optical system IL3, and the 5th illumination optical system IL5 are arrange | positioned at the Y direction at predetermined intervals. Moreover, the some illumination optical system IL1-IL6 is the side (right side of FIG. 2) in which 2nd, 4th, 6th illumination area | region IR2, IR4, IR6 is arrange | positioned with the center plane CL in between. 2nd illumination optical system IL2, 4th illumination optical system IL4, and 6th illumination optical system IL6 are arrange | positioned at this. 2nd illumination optical system IL2, 4th illumination optical system IL4, and 6th illumination optical system IL6 are arrange | positioned at the Y direction at predetermined intervals. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, 3rd illumination optical system IL3 is arrange | positioned between 2nd illumination optical system IL2 and 4th illumination optical system IL4 in an axial direction. 4th illumination optical system IL4 is arrange | positioned between 3rd illumination optical system IL3 and 5th illumination optical system IL5 in an axial direction. The fifth illumination optical system IL5 is disposed between the fourth illumination optical system IL4 and the sixth illumination optical system IL6 in the axial direction. Moreover, 1st illumination optical system IL1, 3rd illumination optical system IL3, and 5th illumination optical system IL5, 2nd illumination optical system IL2, 4th illumination optical system IL4, and 6th illumination optical system IL6. Are arranged symmetrically about the center plane CL as viewed from the Y direction.

Next, with reference to FIG. 4, each illumination optical system IL1-IL6 is demonstrated. In addition, since each illumination optical system IL1-IL6 has the same structure, the 1st illumination optical system IL1 (henceforth simply called "lighting optical system IL") is demonstrated as an example.

The illumination optical system IL applies the Koehler illumination method so that illumination light beam EL1 which irradiates illumination area | region IR (1st illumination area | region IR1) may become uniform illuminance distribution. Moreover, illumination optical system IL is a fall-off illumination system using polarizing beam splitter PBS. The illumination optical system IL has an illumination optical module ILM, a polarizing beam splitter PBS, and a quarter wave plate in order from the incidence side of the illumination light beam EL1 from the light source device 13. (41).

As shown in FIG. 4, the illumination optical module ILM comprises a collimator lens 51, a flyeye lens 52, and a plurality of condenser lenses in order from the incident side of the illumination light beam EL1. 53, the cylindrical lens 54, the illumination field stop 55, and the plurality of relay lenses 56 are provided on the first optical axis BX1. The collimator lens 51 is provided on the emission side of the light guide member 32 of the light source device 13. The optical axis of the collimator lens 51 is arrange | positioned on the 1st optical axis BX1. The collimator lens 51 irradiates the entire surface on the incident side of the fly's eye lens 52. The fly's eye lens 52 is provided on the emission side of the collimator lens 51. The center of the surface on the emission side of the fly's eye lens 52 is disposed on the first optical axis BX1. The fly's eye lens 52 divides the illumination light beam EL1 from the collimator lens 51 into the light beams emitted from each of the plurality of point light source images. At this time, the surface on the exit side of the fly's eye lens 52 in which the point light source image is generated is the first concave mirror of the projection optical system PL (described later) through the illumination field stop 55 from the fly's eye lens 52 ( By the various lenses reaching 72, it is arrange | positioned so that it may be optically conjugate with the pupil plane in which the reflecting surface of the 1st concave mirror 72 is located.

The condenser lens 53 is provided on the emission side of the fly's eye lens 52. The optical axis of the condenser lens 53 is disposed on the first optical axis BX1. The condenser lens 53 superimposes each of the illumination light beams EL1 divided by the fly's eye lens 52 on the illumination field stop 55 through the cylindrical lens 54. Thereby, illumination light beam EL1 becomes uniform illuminance distribution on illumination field stop 55. The cylindrical lens 54 is a flat convex cylindrical lens in which the incident side becomes flat and the exit side is convex. The cylindrical lens 54 is provided on the emission side of the condenser lens 53. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1.

The cylindrical lens 54 converges the chief ray of the illumination light beam EL1 in a direction orthogonal to the first optical axis BX1 in the XZ plane in FIG. 4. The cylindrical lens 54 is provided adjacent to the incident side of the illumination field stop 55. The opening of the illumination field stop 55 is formed in a rectangular shape, such as a trapezoidal shape or a rectangle, which has the same shape as the illumination area IR, and the center of the opening of the illumination field stop 55 is the first optical axis BX1. ) Is placed on the top. At this time, the illumination field stop 55 is formed on the surface which is optically conjugate with the illumination area IR on the mask M by various lenses from the illumination field stop 55 to the mask M. FIG. Is placed. The relay lens 56 is provided on the emission side of the illumination field stop 55. The optical axis of the relay lens 56 is disposed on the first optical axis BX1. The relay lens 56 causes the illumination light beam EL1 from the illumination field stop 55 to enter the polarizing beam splitter PBS.

When the illumination light beam EL1 enters the illumination optical module ILM, the illumination light flux EL1 becomes a light flux that irradiates the entire incident side surface of the fly's eye lens 52 by the collimator lens 51. The illumination light beam EL1 incident on the fly's eye lens 52 becomes the illumination light beam EL1 divided into a plurality of point light sources, and enters the cylindrical lens 54 through the condenser lens 53. The illumination light beam EL1 incident on the cylindrical lens 54 converges in the direction orthogonal to the first optical axis BX1 in the XZ plane. The illumination light beam EL1 passing through the cylindrical lens 54 enters the illumination field stop 55. The illumination light beam EL1 incident on the illumination field stop 55 passes through an opening (rectangular or rectangular shape, such as a trapezoid or rectangle) of the illumination field stop 55, and is polarized beam splitter PBS through the relay lens 56. Enters into.

Polarizing beam splitter PBS is arrange | positioned between illumination optical module ILM and center plane CL. The polarizing beam splitter PBS reflects the illumination light flux EL1 from the illumination optical module ILM, and transmits the projection light flux EL2 reflected by the mask M. As shown in FIG. That is, by making the illumination light beam EL1 from the illumination optical module ILM into linearly polarized light of S polarization, the projection light beam EL2 incident on the polarization beam splitter PBS acts as a quarter wave plate 41. As a result, linearly polarized light of P-polarized light is transmitted to pass through the polarizing beam splitter PBS.

In addition, although the detail of polarizing beam splitter PBS is mentioned later, as shown in FIG. 6, the polarizing beam splitter PBS is the 1st prism 91, the 2nd prism 92, and the 1st prism ( A polarizing film (waveform dividing surface) 93 provided between the 91 and the second prism 92 is provided. The 1st prism 91 and the 2nd prism 92 are comprised from quartz glass, and are the triangular prism of a triangular shape in XZ plane. The polarizing beam splitter PBS has a triangular shape in the XZ plane by joining the triangular first prism 91 and the second prism 92 with the polarizing film 93 interposed therebetween.

The first prism 91 is a prism on the side on which the illumination light beam EL1 and the projection light beam EL2 enter. The second prism 92 is a prism on the side from which the projection light beam EL2 passing through the polarizing film 93 exits. The illumination light beam EL1 which is directed from the first prism 91 to the second prism 92 is incident on the polarizing film 93. The polarizing film 93 reflects the illumination light beam EL1 of S polarization (linear polarization), and transmits the projection light beam EL2 of P polarization (linear polarization).

It is preferable that the polarizing beam splitter PBS reflects most of the illumination light beam EL1 reaching the polarizing film (wavefront dividing surface) 93 and transmits most of the projection light beam EL2. The polarization splitting characteristic of the wavefront splitting surface of the polarizing beam splitter (PBS) is represented by the extinction ratio, but since the extinction ratio is also changed by the incident angle of the light beam toward the wavefront splitting surface, the characteristics of the wavefront splitting surface are practical. In order that the influence on the imaging performance of an image does not become a problem, it is designed in consideration of NA (the number of openings) of illumination light beam EL1 and projection light beam EL2.

The quarter wave plate 41 is disposed between the polarizing beam splitter PBS and the mask M. FIG. The quarter wave plate 41 converts the illumination light beam EL1 reflected by the polarization beam splitter PBS from linearly polarized light (S polarization) to circularly polarized light. Light (circularly polarized light) reflected by the mask M by irradiation of the illumination light beam EL1 of circularly polarized light is converted into projection light beam EL2 of P polarized light (linearly polarized light) by the quarter wave plate 41. do.

FIG. 5A shows the behavior of the illumination light beam EL1 irradiated to the illumination region IR on the mask M and the projection light flux EL2 reflected from the illumination region IR in terms of the XZ plane (first). The figure which exaggerated in one axis (surface perpendicular | vertical to AX1) is shown. As shown to FIG. 5A, the said illumination optical system IL is made so that the chief ray of the projection light beam EL2 reflected by the illumination area | region IR of the mask M may be telecentric (parallel system). , The chief ray of the illumination light beam EL1 irradiated to the illumination region IR of the mask M is intentionally non-telecentric in the XZ plane (surface perpendicular to the first axis AX1). In the YZ plane (parallel to the center plane CL), a telecentric state is obtained. Such characteristics of the illumination light beam EL1 are imparted by the cylindrical lens 54 shown in FIG. 4. Specifically, the line passing through the center point Q1 in the circumferential direction of the illumination area IR on the mask surface P1 toward the first axis AX1, and the radius Rm of the mask surface P1. When the intersection point Q2 with the half circle of the circle is set, the cylindrical lens is directed so that each chief ray of the illumination light beam EL1 passing through the illumination area IR faces the intersection point Q2 on the XZ plane. The curvature of the convex cylindrical lens surface (54) is set. In this way, each chief ray of the projection light beam EL2 reflected in the illumination region IR is parallel to the straight line passing through the first axis AX1, the point Q1, and the intersection Q2 in the XZ plane. (Telecentric).

Next, the some projection area | regions PA1-PA6 exposed by projection by the projection optical system PL are demonstrated. As shown in FIG. 3, the some projection area | region PA1-PA6 on the board | substrate P is arrange | positioned in correspondence with the some illumination area | region IR1-IR6 of the mask M image upper side, and is arrange | positioned have. That is, the several projection area | regions PA1-PA6 on the board | substrate P are arrange | positioned in two rows in a conveyance direction across the center surface CL, and the board | substrate P on the upstream side of a conveyance direction The odd first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are disposed above and are even on the downstream substrate P in the conveying direction. Second projection area PA2, fourth projection area PA4, and sixth projection area PA6 are disposed. Each projection area | region PA1-PA6 becomes an elongate trapezoidal shape (rectangular shape) which has the short side and long side extended in the width direction (Y direction) of the board | substrate P. As shown in FIG. At this time, in each projection area | region PA1-PA6 of trapezoid shape, the short side is located in the center plane CL side, and the long side is an area | region located outside. 1st projection area | region PA1, 3rd projection area | region PA3, and 5th projection area | region PA5 are arrange | positioned at the width direction at predetermined intervals. Moreover, 2nd projection area | region PA2, 4th projection area | region PA4, and 6th projection area | region PA6 are arrange | positioned at the width direction at predetermined intervals. At this time, 2nd projection area | region PA2 is arrange | positioned between 1st projection area | region PA1 and 3rd projection area | region PA3 in an axial direction. Similarly, 3rd projection area | region PA3 is arrange | positioned between 2nd projection area | region PA2 and 4th projection area | region PA4 in an axial direction. 4th projection area | region PA4 is arrange | positioned between 3rd projection area | region PA3 and 5th projection area | region PA5. 5th projection area | region PA5 is arrange | positioned between 4th projection area | region PA4 and 6th projection area | region PA6. Each projection area | region PA1-PA6 is similar to each illumination area | region IR1-IR6, so that the triangular part of the quadrilateral part of the trapezoid-shaped projection area | region PA which mutually adjoin is mutually seen from the conveyance direction of the board | substrate P ( To overlap). At this time, the projection area PA has a shape in which the exposure amount in the overlapping areas of the adjacent projection areas PA is substantially the same as the exposure amount in the non-overlapping area. And 1st-6th projection area | region PA1-PA6 is arrange | positioned so that the whole width | variety of the Y direction of exposure area | region A7 exposed on the board | substrate P may be covered.

Here, in FIG. 2, when viewed in the XZ plane, the circumferential length from the center point of the illumination region IR1 (and IR3, IR5) on the mask M to the center point of the illumination region IR2 (and IR4, IR6) The circumferential length from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the projection area PA2 (and PA4, PA6), It is set substantially the same.

The projection optical system PL is provided in plurality (for example, six in the first embodiment) along the plurality of projection regions PA1 to PA6. The plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 enter the plurality of projection optical systems PL1 to PL6, respectively. Each projection optical system PL1-PL6 guides each projection light beam EL2 reflected by the mask M to each projection area | region PA1-PA6, respectively. That is, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination region IR1 to the first projection region PA1, and similarly, the second to sixth projection optical systems PL2 to PL6. ) Guides each projection light beam EL2 from the second to sixth illumination regions IR2 to IR6 to the second to sixth projection regions PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. The plurality of projection optical systems PL1 to PL6 are disposed on the side (left side in FIG. 2) where the first, third, and fifth projection regions PA1, PA3, and PA5 are disposed with the center plane CL interposed therebetween. The 1st projection optical system PL1, the 3rd projection optical system PL3, and the 5th projection optical system PL5 are arrange | positioned. The 1st projection optical system PL1, the 3rd projection optical system PL3, and the 5th projection optical system PL5 are arrange | positioned at the Y direction at predetermined intervals. Moreover, the some projection optical system PL1-PL6 has the center surface CL in between, and the 2nd, 4th, 6th projection area | region PA2, PA4, PA6 is arrange | positioned (right side of FIG. 2). The 2nd projection optical system PL2, the 4th projection optical system PL4, and the 6th projection optical system PL6 are arrange | positioned. 2nd projection optical system PL2, 4th projection optical system PL4, and 6th projection optical system PL6 are arrange | positioned at the Y direction at predetermined intervals. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, 3rd projection optical system PL3 is arrange | positioned between 2nd projection optical system PL2 and 4th projection optical system PL4 in an axial direction. 4th projection optical system PL4 is arrange | positioned between 3rd projection optical system PL3 and 5th projection optical system PL5. 5th projection optical system PL5 is arrange | positioned between 4th projection optical system PL4 and 6th projection optical system PL6. Moreover, 1st projection optical system PL1, 3rd projection optical system PL3, and 5th projection optical system PL5, 2nd projection optical system PL2, 4th projection optical system PL4, and 6th projection optical system PL6 Are arranged symmetrically about the center plane CL as viewed from the Y direction.

Again, with reference to FIG. 4, each projection optical system PL1-PL6 is demonstrated. In addition, since each projection optical system PL1-PL6 has the same structure, the 1st projection optical system PL1 (henceforth simply "projection optical system PL") is demonstrated as an example.

The projection optical system PL uses an image of the mask pattern in the illumination region IR (first illumination region IR1) on the mask M to form an image on the substrate P. Project onto the projection area PA. The projection optical system PL is the quarter wave plate 41, the polarization beam splitter PBS, and the projection optical module described above, in order from the incident side of the projection light beam EL2 from the mask M. Has a (PLM).

The quarter wave plate 41 and the polarizing beam splitter PBS are combined with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share the quarter wave plate 41 and the polarization beam splitter PBS.

As described with reference to FIG. 5A, the projection light beam EL2 reflected by the illumination region IR becomes a telecentric light beam (a state in which the principal rays are parallel to each other) and enters the projection optical system PL. The projection light beam EL2 that becomes the circularly polarized light reflected by the illumination region IR is converted into linearly polarized light (P polarized light) from circularly polarized light by the quarter wave plate 41, and then to the polarized beam splitter PBS. Enter. The projection light beam EL2 incident on the polarizing beam splitter PBS passes through the polarizing beam splitter PBS and then enters the projection optical module PLM.

Projection optical module PLM is provided corresponding to illumination optical module ILM. That is, the projection optical module PLM of the first projection optical system PL1 is an image of the mask pattern of the first illumination region IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1. ) Is projected onto the first projection area PA1 on the substrate P. Similarly, the projection optical modules PLM of the second to sixth projection optical systems PL2 to PL6 are second to fifth illuminated by the illumination optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image of the mask pattern of 6 illumination area | regions IR2-IR6 is projected on the 2nd-6th projection area | regions PA2-PA6 of the board | substrate P image.

As shown in FIG. 4, the projection optical module PLM includes a first optical system 61 for forming an image of a mask pattern in the illumination region IR on an intermediate image surface P7. , The second optical system 62 which re-images at least a portion of the intermediate image formed by the first optical system 61 into the projection area PA of the substrate P, and the projection disposed on the intermediate image surface P7 on which the intermediate image is formed. The visual field stop 63 is provided. The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and polarization. An adjustment mechanism (polarization adjustment means) 68 is provided.

The 1st optical system 61 and the 2nd optical system 62 are telecentric reflection refractive optical systems which transformed the Dyson system, for example. In the first optical system 61, its optical axis (hereinafter referred to as "second optical axis BX2") is substantially perpendicular to the center plane CL. The first optical system 61 includes a first deflection member 70, a first lens group 71, and a first concave mirror 72. The 1st deflection | deviation member 70 is a triangular prism which has the 1st reflective surface P3 and the 2nd reflective surface P4. The first reflection surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS, and passes the reflected projection light beam EL2 through the first lens group 71 to form a first concave mirror ( 72) is made to enter the surface. The second reflecting surface P4 enters the projection light beam EL2 reflected by the first concave mirror 72 through the first lens group 71 and enters the incident light beam EL2 that has entered the projection field of view aperture. It is a surface reflecting toward (63). The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The first concave mirror 72 is disposed on the same plane of the first optical system 61 and is set in an optically conjugate relationship with a plurality of point light source images generated by the fly's eye lens 52.

The projection light beam EL2 from the polarizing beam splitter PBS is reflected by the first reflecting surface P3 of the first deflection member 70, and the field of view of the upper half of the first lens group 71 is reflected. Passes through the region and enters the first concave mirror 72. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72 and passes through the field of view of the lower half of the first lens group 71. Incident on the second reflecting surface P4 of the first deflection member 70. The projection light beam EL2 incident on the second reflecting surface P4 is reflected on the second reflecting surface P4 and passes through the focus correction optical member 64 and the image shifting optical member 65. Incident on the projection field of view aperture 63.

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA.

The 2nd optical system 62 is the same structure as the 1st optical system 61, and is provided symmetrically with the 1st optical system 61 across the intermediate image surface P7. As for the 2nd optical system 62, the optical axis (henceforth "3rd optical axis BX3") is substantially orthogonal to the center plane CL, and is parallel to the 2nd optical axis BX2. The second optical system 62 includes a second deflection member 80, a second lens group 81, and a second concave mirror 82. The second deflection member 80 has a third reflective surface P5 and a fourth reflective surface P6. The third reflecting surface P5 reflects the projection light beam EL2 from the projection field stop 63 and passes the reflected projection light beam EL2 through the second lens group 81 to form a second concave mirror ( 82) is made to face incident. The fourth reflecting surface P6 enters the projection light beam EL2 reflected by the second concave mirror 82 through the second lens group 81 and enters the incident projection light beam EL2 into the projection area ( It is a surface reflecting toward PA). The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The 2nd concave mirror 82 is arrange | positioned in the coplanar surface of the 2nd optical system 62, and is set in the relationship which is optically conjugate with the many point light source image formed in the 1st concave mirror 72. FIG.

The projection light beam EL2 from the projection field stop 63 is reflected by the third reflecting surface P5 of the second deflection member 80, and passes through the field of view of the upper half of the second lens group 81. Is incident on the second concave mirror 82. The projection light beam EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82, passes through the field of view for the lower half of the second lens group 81, and the second deflection member. It enters into the 4th reflective surface P6 of (80). The projection light beam EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6, passes through the magnification correction optical member 66, and is projected onto the projection area PA. Thereby, the image of the mask pattern in illumination area | region IR is projected by equal magnification (x1) to projection area | region PA.

The focus correction optical member 64 is disposed between the first deflection member 70 and the projection field stop 63. The focus correction optical member 64 adjusts the focus state of the image of the mask pattern projected onto the substrate P. FIG. For example, the focus correction optical members 64 overlap two wedge-shaped prisms in the reverse direction (the opposite direction to the X direction in FIG. 4) so as to form a transparent parallel flat plate as a whole. By sliding this pair of prism in the inclined surface direction without changing the space | interval between the mutually opposing surfaces, the thickness as a parallel flat plate is made variable. As a result, the effective optical path length of the first optical system 61 is finely adjusted, and the focus (focus) state of the image of the mask pattern formed in the intermediate image surface P7 and the projection area PA is finely adjusted. .

The image shift optical member 65 is disposed between the first deflection member 70 and the projection field stop 63. The optical member 65 for image shifting adjusts the image of the mask pattern projected on the board | substrate P so that a movement is possible in an image surface. The optical member 65 for image shift is comprised from the transparent parallel plate glass which can incline in the XZ plane of FIG. 4, and the transparent parallel plate glass which can incline in the YZ plane of FIG. By adjusting the respective inclination amounts of the two parallel plate glasses, the image of the mask pattern formed on the intermediate image surface P7 and the projection area PA can be micro-shifted in the X direction or the Y direction. have.

The magnification correction optical member 66 is disposed between the second deflection member 80 and the substrate P. As shown in FIG. For example, the magnification correction optical member 66 coaxially arranges three of the concave lens, the convex lens, and the concave lens at predetermined intervals, fixes the front and rear concave lenses, and fixes the convex lens between the optical axes (primary rays). It is configured to move in the direction. Thereby, the image of the mask pattern formed in projection area | region PA is enlarged or reduced isotropically by a minute amount, maintaining a telecentric imaging state. Moreover, the optical axis of the three lens groups which comprise the magnification correction optical member 66 is inclined in XZ plane so that it may become parallel to the principal ray of projection light beam EL2.

The rotation correction mechanism 67 rotates the 1st deflection member 70 about the axis parallel to Z axis | shaft with an actuator (not shown), for example. The rotation correction mechanism 67 rotates the first deflection member 70 so that the image of the mask pattern formed on the intermediate upper surface P7 can be minutely rotated within the intermediate upper surface P7. Can be.

The polarization adjustment mechanism 68 rotates the quarter wave plate 41 around an axis orthogonal to the plate surface, for example, by an actuator (not shown) to adjust the polarization direction. The polarization adjustment mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area | region PA by rotating the quarter wave plate 41. FIG.

In the projection optical system PL configured as described above, the projection light beam EL2 from the mask M is emitted from the illumination region IR in the normal direction of the mask surface P1, and the quarter wave plate 41 and Passes through the polarizing beam splitter PBS and enters the first optical system 61. The projection light beam EL2 incident on the first optical system 61 is reflected by the first reflective surface (planar mirror) P3 of the first deflection member 70 of the first optical system 61, and the first lens group Passed through 71 is reflected by the first concave mirror 72. The projection light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again and is reflected by the second reflecting surface (planar mirror) P4 of the first deflection member 70. Then, it passes through the focus correction optical member 64 and the image shift optical member 65 and enters the projection field stop 63. The projection light beam EL2 which has passed through the projection field stop 63 is reflected by the third reflective surface (planar mirror) P5 of the second deflection member 80 of the second optical system 62, and the second lens group Passed by 81 is reflected by the second concave mirror 82. The projection light beam EL2 reflected by the second concave mirror 82 passes through the second lens group 81 again and is reflected by the fourth reflecting surface (planar mirror) P6 of the second deflection member 80. And enters the magnification correcting optical member 66. The projection light beam EL2 emitted from the magnification correction optical member 66 enters the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination area IR is It is projected by equal magnification (x1) to projection area | region PA.

In the present embodiment, the second reflective surface (planar mirror) P4 of the first deflection member 70 and the third reflective surface (planar mirror) P5 of the second deflection member 80 are the center plane ( Although it is made into the surface inclined 45 degrees with respect to CL (or optical axis BX2, BX3), the 1st reflective surface (plane mirror) P3 of the 1st deflection member 70, and the 2nd deflection member 80 4th reflective surface (plane mirror) P6 is set to the angle other than 45 degrees with respect to the center surface CL (or optical axis BX2, BX3). The angle α ° (absolute value) with respect to the center plane CL (or the optical axis BX2) of the first reflection surface P3 of the first deflection member 70 is shown in FIG. 6 by the point Q1 and the intersection point ( Q2) When the angle formed between the straight line passing through the first axis AX1 and the center plane CL is θ °, it is determined in a relationship of α ° = 45 ° + θ ° / 2. Similarly, the angle β ° (absolute value) with respect to the center plane CL (or the optical axis BX2) of the fourth reflective surface P6 of the second deflection member 80 is the outer peripheral surface of the substrate support drum 25. Β ° = 45 ° + ε ° when the angle in the ZX plane between the main light ray of the projection light beam EL2 passing through the center point in the projection area PA in the circumferential direction and the center plane CL is ε ° It is decided in relation of / 2.

<Configuration of Illumination Optical System and Projection Optical System>

In addition, with reference to FIG. 4, the structures of the illumination optical system IL and the projection optical system PL of the exposure apparatus U3 of the first embodiment will be described in detail with reference to FIGS. 6 and 7.

As above, the illumination optical system IL shown in FIG. 4 has the illumination optical module ILM, the projection optical system PL has the projection optical module PLM, and the illumination optical system IL and the projection optical system PL ) Share a polarization beam splitter (PBS) and a quarter wave plate 41. The illumination optical module ILM and the polarizing beam splitter PBS are provided between the mask M and the projection optical module PLM in the direction (Z direction) in which the center plane CL extends. Specifically, the polarization beam splitter PBS is provided between the mask M and the first deflection member 70 of the projection optical module PLM in the Z direction, and the center plane CL in the X direction. It is provided between the illumination optical module ILM. In addition, the illumination optical module ILM is provided between the mask M and the first lens group 71 of the projection optical module PLM in the Z direction, and the polarization beam splitter PBS in the X direction. It is provided on the opposite side to the center plane CL side across the gap.

Here, with reference to FIG. 7, the arrangement | positioning area | region E which can arrange illumination optical module ILM is demonstrated. The arrangement area E in the XZ plane is a region partitioned by the first line L1, the second line L2, and the third line L3. The second line L2 is the chief ray of the projection light beam EL2 reflected by the mask M (for example, passes through the point Q1 in FIG. 5A). The first line L1 is a mask surface (at the intersection (for example, the point Q1 in FIG. 5A) where the main light ray of the projection light beam EL2 reflected by the mask M and the mask surface P1 intersect each other. It is the tangent (contact) of P1). The third line L3 is a line set in parallel with the second optical axis BX2 of the first optical system 61 so as not to spatially interfere with the projection optical module PLM. The illumination optical module ILM is disposed in the placement area E surrounded by the first line L1, the second line L2, and the third line L3. In the case where the mask M is a cylinder, as shown in FIG. 7, the first line (Z) becomes larger as the distance between the third line L3 and the first line L1 in the Z direction increases from the center plane CL. L1) can be tilted. Therefore, installation of the illumination optical module ILM becomes easy.

In addition, the arrangement of the illumination optical module ILM is also defined by the incident angle β of the chief ray of the illumination light beam EL1 incident on the polarization film 93 of the polarization beam splitter PBS from the illumination optical module ILM. . As shown in FIG. 6, the angle between the main light beam (for example, passing through the point Q1 in FIG. 5A) of the projection light beam EL2 reflected by the illumination region IR and the center plane CL is θ (θ). ≠ 0). At this time, in the illumination optical module ILM, the incident angle β (described as θ1 in the following description) of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 of the polarization beam splitter PBS is 45 ° ×. It arrange | positions so that it may become in the range of 0.8 <= (beta) <(45 degrees + (theta) / 2) x1.2. That is, the angle range of the incidence angle β is physically applied to the mask M and the projection optical module PLM while the illumination light beam EL1 is incident on the polarization film 93 of the polarization beam splitter PBS at an incidence angle β. It is in the range which can arrange illumination optical module (ILM) so that it may not interfere. The angle range of the incident angle β is determined in consideration of the angular distribution determined by the numerical aperture NA of the illumination light beam EL1, but 45 ° ≦ β ≦ (45 ° ± θ / 2) is more preferable. . In addition, the optimal incident angle β is the polarization beam splitter PBS in a state where the first optical axis BX1 of the illumination optical module ILM becomes parallel to the second optical axis BX2 of the projection optical module PLM. It is an angle of incidence when the illumination light beam EL1 is incident on the polarizing film 93.

The polarizing beam splitter PBS is composed of two triangular prisms (for example, quartz) 91 and 92 joined by sandwiching the polarizing film 93 therebetween. The incident surface of the prism (first prism) 91 which enters the illumination light beam EL1 from the illumination optical module ILM is set perpendicular to the optical axis BX1 of the illumination optical module ILM, and the illumination light flux ( The surface which emits EL1 toward the mask M is made up of the main light beam of the projection light beam EL2 (for example, a line connecting the point Q1 in FIG. 5A and the rotation center axis (first axis) AX1). It is set vertically. Moreover, the exit surface of the prism (2nd prism) 92 which permeate | transmits the projection light beam EL2 from the mask M toward the projection optical module PLM through the prism 91 and the polarizing film 93, It is set perpendicular to the chief ray of the projection light beam EL2 (for example, a line connecting the point Q1 and the rotation center axis AX1 in FIG. 5A). Therefore, the polarizing beam splitter PBS is an optical parallel flat plate having a constant thickness with respect to the projection light beam EL2 having the telecentric chief ray.

As shown in FIG. 4, since the illumination optical module ILM becomes easy to physically interfere with the projection optical module PLM on the polarizing beam splitter PBS side, various lenses contained in the illumination optical module ILM. A part of the (first lens) is notched. In addition, although 1st Embodiment demonstrates notch of a part of various lenses of illumination optical module ILM, it is not limited to this structure. That is, since the projection optical module PLM also easily interferes with the illumination optical module ILM physically on the polarizing beam splitter PBS side, various lenses (second lenses) included in the projection optical module PLM. It's okay to notch part of it. Therefore, you may notch part of the various lenses contained in both illumination optical module ILM and projection optical module PLM. However, in general, since the illumination optical module ILM has a low optical precision required in comparison with the projection optical module PLM, it is preferable to simply notch a part of various lenses of the illumination optical module ILM. .

In the illumination optical module ILM, a part of the plurality of relay lenses 56 provided on the polarizing beam splitter PBS side is notched. The plurality of relay lenses 56 include the first relay lens 56a, the second relay lens 56b, the third relay lens 56c, and the fourth relay lens in order from the incident side of the illumination light beam EL1. 56d). The fourth relay lens 56d is provided adjacent to the polarization beam splitter PBS. The third relay lens 56c is provided adjacent to the fourth relay lens 56d. The 2nd relay lens 56b is provided in the 3rd relay lens 56c at predetermined intervals, and the 2nd relay lens 56b is between the 2nd relay lens 56b and the 3rd relay lens 56c. ) And the first relay lens 56a are longer than each other. The first relay lens 56a is provided adjacent to the second relay lens 56b. The 1st relay lens 56a and the 2nd relay lens 56b of the side far from polarizing beam splitter PBS are formed circularly centering on the optical axis. On the other hand, the third relay lens 56c and the fourth relay lens 56d on the side close to the polarization beam splitter PBS have a shape in which a part of the circle is notched.

When the illumination light beam EL1 is incident on the third relay lens 56c and the fourth relay lens 56d, the illumination light beam EL1 is incident on the third relay lens 56c and the fourth relay lens 56d. The incident region S2 and the non-incident region S1 to which the illumination light beam EL1 does not enter are formed. The third relay lens 56c and the fourth relay lens 56d are formed by missing a part of the non-incidence region S1, thereby forming a part of a circular shape. Specifically, the third relay lens 56c and the fourth relay lens 56d have a shape in which both sides of the orthogonal direction perpendicular to the first optical axis BX1 are cut in a plane perpendicular to the orthogonal direction in the XZ plane. have. For this reason, when the 3rd relay lens 56c and the 4th relay lens 56d are seen from the 1st optical axis BX1 upper surface, they are substantially elliptical, substantially long shape, and substantially platelet shape. ) And the like.

Here, an example of the external appearance of the fourth relay lens 56d closest to the polarization beam splitter PBS in FIG. 4 will be described with reference to FIG. 5B. 5B is a view of the fourth relay lens 56d from the polarization beam splitter PBS side. The illumination light beam (up and down in the Z direction) is interposed between the incident regions S2 through which the illumination light beam EL1 passes. There is a non-incidence region S1 through which EL1) does not pass. After the fourth relay lens 56d is manufactured as a circular lens having a predetermined diameter, the fourth relay lens 56d is made by cutting a portion corresponding to the non-incidence region S1.

The diameter of the circular lens is the size of the illumination area IR on the mask M, the working distance, the numerical aperture NA of the illumination light flux EL1, and the illumination light flux described in Fig. 5A. Determined by the non-telecentric degree of the chief ray of (EL1). In FIG. 5B, four of the illumination region IR set on the mask M (here, a rectangular shape having a long side in the Y direction centering on the point Q1 through which the optical axis BX1 passes) is shown. Note the corners. If one point among the four corners is FFa, the point FFa in the illumination region IR is caused by a substantially circular partial illumination beam EL1a among the illumination beams EL1 passing through the fourth relay lens 56d. Is investigated. The dimension of the circular distribution on the 4th relay lens 56d of partial illumination light beam EL1a is determined by the working distance (focal length) and numerical aperture NA of illumination light beam EL1.

In addition, as described with reference to FIG. 5A, since the chief rays of the illumination light beam EL1 on the mask M are in a non-telecentric state within the XZ plane, the mask M is on the image. The chief ray of the partial illumination light beam EL1a passing through the point FFa is shifted by a certain amount in the Z direction on the fourth relay lens 56d. Thus, the superposition of all distributions on the 4th relay lens 56d of the partial illumination light beam which irradiates each point of the four corners (and above the outer edge) of illumination area | region IR It becomes the illumination light beam EL1 distribute | distributed to the incidence area | region S2 on the 4 relay lens 56d. Therefore, the distribution (spread) on the fourth relay lens 56d of the illumination light beam EL1 is obtained by taking the non-telecentric state in the XZ plane of the illumination light beam EL1 into consideration. What is necessary is just to determine the shape and dimension of the 4th relay lens 56d so that it may become the magnitude | size which covers area | region S2 (distribution area | region of illumination light beam EL1).

Similarly to the fourth relay lens 56d, the other lens 56c or the lenses 56a and 56b in FIG. 4 also have a size in consideration of the distribution area of the illumination light beam EL1 so as to have a size that covers it. The appearance and dimensions of the can be determined.

In general, a high-precision lens having power (refractive power) is made by polishing a surface of a circular base material such as optical glass or quartz, but from the beginning, the incident region S2 determined as shown in Fig. 5B, for example. An approximately platelet, approximately elliptical, approximately oblong, or approximately rectangular base material having a size corresponding to the above may be prepared, and the surface may be polished to form a desired lens surface. In that case, the process which cuts the part corresponded to non-incidence area | region S1 becomes unnecessary.

<Polarization beam splitter>

Next, the structure of the polarizing beam splitter PBS provided in the exposure apparatus U3 of 1st Embodiment is demonstrated with reference to FIG. 6, FIG. FIG. 8: is a figure which shows the structure around the polarizing film of the polarizing beam splitter of 1st Embodiment. It is a figure which shows the structure around the polarizing film of the polarizing beam splitter of the comparative example which concerns on 1st Embodiment. FIG. 10 is a graph showing the transmission characteristics and the reflection characteristics of the polarization beam splitter shown in FIG. 8. FIG. 11 is a graph showing the transmission characteristics and the reflection characteristics of the polarization beam splitter shown in FIG. 9.

As shown in FIG. 6, the polarizing beam splitter PBS includes a polarizing film provided between the first prism 91, the second prism 92, and the first prism 91 and the second prism 92. Has 93. The 1st prism 91 and the 2nd prism 92 are comprised from quartz glass, and are the triangular prism of another triangular shape in XZ plane. The polarizing beam splitter PBS has a rectangular shape in the XZ plane by joining the first prism 91 and the second prism 92 in a triangular shape with the polarizing film 93 interposed therebetween.

The first prism 91 is a prism on the side on which the illumination light beam EL1 and the projection light beam EL2 enter. The first prism 91 has a first surface D1 on which the illumination light beam EL1 from the illumination optical module ILM enters and a second surface on which the projection light flux EL2 from the mask M enters ( D2) The first surface D1 is a plane perpendicular to the main light beam of the illumination light beam EL1. Moreover, 2nd surface D2 becomes a perpendicular surface with respect to the main light ray of projection light beam EL2.

The second prism 92 is a prism on the side from which the projection light beam EL2 passing through the polarizing film 93 exits. The second prism 92 has a third surface D3 facing the first surface D1 of the first prism 91 and a fourth surface facing the second surface D2 of the first prism 91. It has a face D4. The fourth surface D4 is a surface on which the projection light beam EL2 incident on the first prism 91 passes through the polarizing film 93 and exits, and is perpendicular to the main light beam of the projection light beam EL2 emitted. It is. At this time, while the 1st surface D1 becomes non-parallel with the opposing 3rd surface D3, the 2nd surface D2 becomes parallel to the opposing 4th surface D4.

The illumination light beam EL1 which is directed from the first prism 91 to the second prism 92 is incident on the polarizing film 93. The polarizing film 93 reflects the illumination light beam EL1 of S polarization (linear polarization), and transmits the projection light beam EL2 of P polarization (linear polarization). The polarizing film 93 is formed by laminating a film body whose main component is silicon dioxide (SiO ₂ ) and a film body whose main component is hafnium oxide (HfO ₂ ) in the film thickness direction. Hafnium oxide is a material having a low absorption of light flux, similar to quartz, and is a material that hardly changes due to absorption of the light flux. This polarizing film 93 is a film which becomes a predetermined Brewster angle (theta) B. Here, Brewster's angle (theta) B is an angle which the reflectance of P polarization becomes zero.

Brewster angle (theta) B is computed from the following formula. Nh is the refractive index of hafnium oxide, nL is the refractive index of silicon dioxide, and ns is the refractive index of prism (quartz glass).

θB = arcsin ([(nh ² × nL ² ) / ｛ns ² (nh ² + nL ² )｝] ^0.5 )

If nh = 2.07 (HfO ₂ ), nL = 1.47 (SiO ₂ ) and ns = 1.47 (quartz glass), the Brewster angle θB of the polarizing film 93 is approximately 54.6 ° from the above equation.

However, the refractive indices nh, nL and ns of each material are not limited to the above numerical values. The refractive index generally varies with the wavelengths of use from ultraviolet to visible light, and has a somewhat range. Moreover, a refractive index may change by adding a little to various materials. For example, the refractive index nh of hafnium oxide is in the range of 2.00 to 2.15, and the refractive index nL of silicon dioxide is distributed in the range of 1.45 to 1.48. In addition, when the refractive index changes depending on the wavelength used, the refractive index ns of the prism (quartz glass) also changes. If the refractive index ns is in the range of 1.45 to 1.48 similarly to the SiO ₂ described above, the Brewster angle θB of the polarizing film 93 derived from the above formula has a range of 52.4 ° to 57.3 °.

As described above, since the refractive indices nh, nL, and ns of each material change slightly depending on the material composition and the use wavelength, the Brewster angle θB may also change, but in the following specific examples, θB = 54.6 °.

At this time, as shown in FIG. 6, when the auxiliary line (dotted line) L1 is drawn, the angle θ2 formed between the polarizing film 93 and the first surface D1 is the illumination light beam incident on the polarizing film 93 ( It can be seen that the angle becomes equal to the incident angle θ1 of the chief ray of EL1). That is, the first prism 91 is formed such that the angle θ2 formed between the first surface D1 and the polarizing film 93 is equal to the incident angle θ1 of the main light beam of the illumination light beam EL1.

In addition, in FIG. 6, the illumination light beam EL1 is reflected by the polarizing film 93, and the reflected light (projection light beam EL2) from the mask M transmits the polarizing film 93 so that the polarization beam splitter ( Although PBS was configured, the reflection / transmission characteristics of the illumination light beam EL1 and the projection light beam EL2 with respect to the polarizing film 93 may be reversed. That is, the illumination light beam EL1 may transmit the polarization film 93, and the reflected light (projection light beam EL2) from the mask M may be reflected by the polarization film 93. Such embodiment is mentioned later.

As shown in FIG. 8, in the polarizing film 93, the direction in which the first prism 91 and the second prism 92 are connected is the film thickness direction. The polarizing film 93 has a first film body H1 of silicon dioxide and a second film body H2 of hafnium oxide, and the first film body H1 and the second film body H2 are laminated in the film thickness direction. have. Specifically, the polarizing film 93 is a periodic layer in which a plurality of layer bodies made of the first film body H1 and the second film body H2 are periodically laminated in the film thickness direction. Here, when the incidence angle θ1 of the main light beam of the illumination light beam EL1 incident on the polarizing film 93 becomes the Brewster angle θB of 54.6 °, the polarizing film 93 may perform the layer H for 18 to 30 cycles. It is formed of a periodic layer to be described below. The layer H is provided on both sides of the film thickness direction with the first film body H1 having a film thickness of λ / 4 wavelength relative to the wavelength? Of the illumination light beam EL1 and the first film body H1 interposed therebetween. And a pair of 2nd film | membrane H2 of the film thickness used as (lambda) / 8 wavelength with respect to wavelength (lambda) of illumination light beam EL1, and is comprised. The layer body H configured in this way is laminated | stacked in the film thickness direction, and each 2nd film body H2 of the layer body H is integrated with each 2nd film body H2 of the adjacent layer body H, A second film body H2 having a film thickness of lambda / 4 wavelength is formed. For this reason, as long as the film body of both sides of a film thickness direction becomes a pair of 2nd film body H2 used as the film thickness of (lambda) / 8 wavelength, and it becomes a film thickness of (lambda) / 8 wavelength, Between the pair of second film bodies H2, a first film body H1 having a film thickness of λ / 4 wavelength and a second film body H2 having a film thickness of λ / 4 wavelength are provided alternately. do.

Moreover, the polarizing film 93 is fixed between the 1st prism 91 and the 2nd prism 92 by an adhesive agent or an optical contact. For example, in the polarizing beam splitter PBS, after the polarizing film 93 is formed on the first prism 91, the second prism 92 is formed on the polarizing film 93 by an adhesive agent. It is formed by joining to (上).

Next, with reference to FIG. 10, the transmission characteristic and the reflection characteristic of said polarizing beam splitter PBS are demonstrated. In FIG. 10, the incidence angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 of the polarizing beam splitter PBS is set to 5 Brewster's angle θB of 54.6 °, and the polarizing film 93 is 21. As a periodic layer, the illumination light beam EL1 uses the YAG laser of a 3rd (3x) harmonic. In the graph shown in FIG. 10, the horizontal axis is the incident angle θ1, and the vertical axis is the transmittance and reflectance. In the graph shown in FIG. 10, Rs is a reflected light beam of S polarized light incident on the polarizing film 93, Rp is a reflected light beam of P polarized light incident on the polarizing film 93, and Ts is a polarizing film 93. Is the transmission light beam of S-polarized light incident on (), and Tp is the transmission light flux of P-polarized light incident on polarizing film 93.

Here, since the polarizing film 93 of the polarizing beam splitter PBS reflects the reflected light beam (light beam) of S-polarized light and transmits the transmitted light beam (projection light beam) of P-polarized light, the reflected light beam ( It becomes the polarizing film 93 which is high in the reflectance of Rs) and excellent in the film | membrane characteristic with the high transmittance | permeability of the transmission light beam Tp. In other words, it becomes a polarizing film excellent in the film | membrane characteristic with the low reflectance of the reflected light beam Rp, and the low transmittance of the transmitted light flux Ts. In FIG. 10, the range of the transmittance and reflectance of the polarizing film 93 which can be used optimally is the transmittance and reflectance of the reflectance of the reflected light flux Rs and the transmittance of the transmitted light flux Tp at the Brewster angle θB of 54.6 °. It is the range which allows this 5% fall. That is, since the transmittance and the reflectance at the Brewster angle θB are 100%, the polarizing film 93 which can be optimally used has a range in which the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp are 95% or more. It is the range of the transmittance and the reflectance. In the case shown in FIG. 10, the range of the incident angle θ1 is 46.8 ° or more and 61.4 ° or less in a range where the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp are 95% or more.

As described above, in FIG. 10, when the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 of the polarization beam splitter PBS is set to 54.6 °, the Brewster angle θB is the illumination light flux EL1. Since the range of incidence angles of light rays other than the chief ray of) can be 46.8 ° or more and 61.4 ° or less, the angle range of the incidence angles of the illumination light beam EL1 incident on the polarizing film 93 can be in the range of 14.6 °. I can see that there is.

Therefore, in the illumination optical module ILM of the exposure apparatus U3, the angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarization film 93 of the polarization beam splitter PBS is 46.8 ° or more 61.4. The illumination light beam EL1 can be emitted so that the main light beam of the illumination light beam EL1 becomes the Brewster angle θB of 54.6 ° while being less than or equal to °.

Next, with reference to FIG. 9, the polarization beam splitter PBS as a comparative example with respect to the polarization beam splitter PBS of 1st Embodiment shown in FIG. 8 is demonstrated. The polarizing beam splitter PBS used as a comparative example has the structure substantially the same as 1st Embodiment, and the 1st prism 91, the 2nd prism 92, the 1st prism 91, and the 2nd prism ( 92 is provided between the polarizing films 100. Since the 1st prism 91 and the 2nd prism 92 are the same as 1st Embodiment, description is abbreviate | omitted.

In the polarizing film 100 of the polarizing beam splitter PBS serving as a comparative example, the main light beam of the illumination light beam EL1 incident on the polarizing film 100 is a film having an incident angle θ1 of 45 °. Specifically, when the chief ray of the illumination light beam EL1 incident on the polarizing film 100 becomes the incident angle θ1 of 45 °, the polarizing film 100 has the same layer thickness H as in the first embodiment. It is a periodic layer made 31 to 40 cycles in a direction.

Next, with reference to FIG. 11, the transmission characteristic and the reflection characteristic of the polarizing beam splitter PBS of a comparative example are demonstrated. In FIG. 11, the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 100 of the polarizing beam splitter PBS is an incident angle of 45 °, and the polarizing film 100 is a 33 period layer. The illumination light beam EL1 uses a YAG laser of third (three times) harmonic wave. In the graph shown in FIG. 11, the horizontal axis is the incident angle, the vertical axis is the transmittance and reflectance, Rs is the reflected light flux of S polarized light incident on the polarizing film 100, and Rp is incident on the polarizing film 100. The reflected light flux of P-polarized light, Ts is the transmission light flux of S polarization which enters into the polarizing film 100, and Tp is the transmission light flux of P polarization which enters into the polarizing film 100. As shown in FIG.

In FIG. 11, the range of the transmittance | permeability and the reflectance of the polarizing film 100 which can be used optimally is the range which the reflectance of the reflected light beam Rs and the transmittance | permeability of the transmitted light beam Tp become 95% or more. In the case shown in FIG. 11, the range of incidence angle (theta) 1 is 41.9 degrees or more and 48.7 degrees or less in the range in which the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp become 95% or more.

As mentioned above, in FIG. 11, when the incident angle (theta) 1 of the chief ray of the illumination light beam EL1 which injects into the polarizing film 100 of the polarization beam splitter PBS is 45 degrees, other than the main light ray of the illumination light beam EL1. Since the angle range of the incident angle θ1 of the light beam can be 41.9 ° or more and 48.7 ° or less, the angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 100 is in the range of 6.8 °. You can see that you can. Therefore, compared with the polarization beam splitter PBS shown in FIG. 9, the polarizing beam splitter PBS shown in FIG. 8 can make the angle range of the incident angle (theta) 1 of illumination light beam EL1 about 2 times wider.

<Device manufacturing method>

Next, with reference to FIG. 12, a device manufacturing method is demonstrated. 12 is a flowchart illustrating a device manufacturing method of the first embodiment.

In the device manufacturing method shown in FIG. 12, first, the function and performance design of the display panel by the self-luminous element, such as organic electroluminescent element, are performed, for example, and the necessary circuit pattern and wiring pattern are designed by CAD etc. ( Step S201). Next, based on the pattern for every layer designed by CAD etc., the mask M of the required layer is produced (step S202). Moreover, the supply roll FR1 by which the flexible board | substrate P (resin film, a metal thin film, a plastics, etc.) which become a base material of a display panel was wound is prepared (step S203). In addition, the roll-shaped board | substrate P prepared in this step S203 has modified the surface as needed, the base layer (for example, the minute unevenness | corrugation by imprint system), and the light The sensitive functional film or transparent film (insulating material) may be laminated in advance.

Next, a backplane layer formed of electrodes, wirings, insulating films, TFTs (thin film semiconductors), and the like constituting the display panel device is formed on the substrate P, and laminated on the backplane layer. As such, a light emitting layer (display pixel portion) made of a self-light emitting element such as an organic EL is formed (step S204). This step S204 also includes a conventional photolithography step of exposing a photoresist layer using the exposure apparatus U3 described in each of the foregoing embodiments, but the photosensitive silane coupling material is applied instead of the photoresist. The exposure process of pattern exposing the board | substrate P to form a pattern by hydrophilicity on the surface, and pattern-exposing a photosensitive catalyst layer and forming the pattern (wiring, electrode, etc.) of a metal film by the electroless-plating method. The process by a wet process or the printing process which draws a pattern by the conductive ink containing silver nanoparticles, etc. are also included.

Next, for each display panel device continuously manufactured on a long substrate P in a roll method, the substrate P is diced, or a protective film (on the surface of each display panel device). A device is assembled by attaching a large environmental barrier layer, a color filter sheet, or the like (step S205). Next, an inspection process is performed to see whether the display panel device functions normally or satisfies the desired performance and characteristics (step S206). As described above, a display panel (flexible display) can be manufactured.

As described above, the first embodiment reflects the illumination light beam EL1 by the polarization beam splitter PBS in the illumination optical system IL, which is a fall light illumination using the polarization beam splitter PBS, and the projection light beam EL2 is reflected. In the case of transmission, the polarizing beam splitter PBS is shared between the illumination optical system IL and the projection optical system PL, and the shape of the lens element close to the polarization beam splitter PBS in the illumination optical module ILM is at least the illumination light flux. By setting to the shape according to distribution of EL1, illumination optical module ILM and polarizing beam splitter PBS can be provided between mask M and projection optical module PLM. For this reason, physical interference of the illumination optical system IL and the projection optical system PL, in particular, the physical interference condition between the illumination optical module ILM and the projection optical module PLM is alleviated, and the illumination optical module ILM Degree of freedom of arrangement with the polarizing beam splitter PBS and the arrangement of the projection optical module PLM and the polarizing beam splitter PBS can be increased, and the illumination optical system IL and the projection optical system PL can be easily disposed. It becomes possible.

In the first embodiment, a portion of the fourth relay lens 56d and the third relay lens 56c adjacent to the polarization beam splitter PBS is substantially passed through the illumination light beam EL1 (incident area S2). )) And the lens outline without the portion (non-incident area S1) that substantially does not pass the illumination light beam EL1, so that it is a compact illumination optical module ILM, while the illumination light flux EL1 Of the arrangement of the illumination optical module (ILM) and the projection optical module (PLM), while maintaining high accuracy of the illumination conditions (telecentricity, illuminance uniformity, etc.) of the illumination region IR with little loss. You can increase the degree of freedom.

In addition, in the first embodiment, a part of the lens included in the illumination optical module ILM is missing to reduce the appearance, but a part of the lens included in the projection optical module PLM may be missing to reduce the appearance. Also in this case, like the illumination optical module ILM, a part of the lens on the side near the polarization beam splitter PBS, for example, the lens on the side of the first deflection member 70 of the first lens group 71. The appearance can be made small by missing the shape.

In the first embodiment, the polarizing film 93 of the polarizing beam splitter PBS is formed by stacking the first film body H1 of silicon dioxide and the second film body H2 of hafnium oxide in the film thickness direction. Can be. For this reason, the polarizing film 93 has a reflectance of the reflected light beam (lighting beam) of S-polarized light incident on the polarizing film 93 and the transmittance of the transmitted light beam (projection light beam) of P-polarized light incident on the polarizing film 93. Can be made high. As a result, the polarization beam splitter PBS applies a load to the polarization film 93 even when the illumination light beam EL1 having a high energy density, which is a wavelength of i-line or less, is incident on the polarization film 93. It can suppress, and can isolate | separate suitably to a reflection light beam and a transmission light beam.

Further, in the first embodiment, the polarizing film 93 can be formed into a film in which the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 becomes the Brewster angle θB of 54.6 °. . In other words, by setting the main light beam of the illumination light beam EL1 incident on the polarizing film 93 to be Brewster angle θB of 54.6 °, the angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 is adjusted. , 46.8 ° or more and 61.4 ° or less. For this reason, the angle range of the incident angle (theta) 1 of illumination light beam EL1 which injects into the polarizing film 93 can be widened. Thereby, it becomes possible to enlarge the numerical aperture NA of the lens provided adjacent to polarization beam splitter PBS so that the angle range of the incident angle (theta) 1 of illumination light beam EL1 can be widened. For this reason, since it becomes possible to use a lens with a large numerical aperture NA, the resolution of the exposure apparatus U3 can be improved and it becomes possible to expose a fine mask pattern with respect to the board | substrate P. As shown in FIG.

Moreover, since the Brewster angle (theta) B of the polarizing film 93 in 1st Embodiment can take the range of 52.4 degrees-57.3 degrees by the variation of the refractive index of the material (membrane) which comprises the polarizing film 93, In consideration of the range, the angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 may be set.

In addition, in the first embodiment, the first surface D1 and the third surface D3 of the polarizing beam splitter PBS are made to be non-parallel, and the second surface D2 and the fourth surface D4 are parallel to each other. Can be. In the first embodiment, the angle θ2 formed between the first surface D1 and the polarizing film 93 is the same as the incident angle θ1 of the main light beam of the illumination light beam EL1 incident on the polarizing film 93. can do. For this reason, the 1st surface D1 can be made into a perpendicular | vertical plane with respect to the main light ray of the illumination light beam EL1 which injects into the 1st surface D1, and the projection light beam EL2 which injects into the 2nd surface D2 is carried out. 2nd surface D2 can be made into a perpendicular | vertical plane with respect to the chief ray of (). Thereby, the polarization beam splitter PBS can suppress reflection of the illumination light beam EL1 in the 1st surface D1, and also reflects the projection light beam EL2 in the 2nd surface D2. Can be suppressed.

Moreover, in 1st Embodiment, the polarizing film 93 used as a periodic layer can be formed by periodically stacking predetermined | prescribed layer H in the film thickness direction. At this time, as an example, the polarization film 93 (FIG. 8) whose incidence angle θ1 of the main light beam of the illumination light beam EL1 becomes the Brewster angle θB of 54.6 ° is the incident angle θ1 of the main light beam of the illumination light beam EL1. The periodic layer can be reduced as compared with the polarizing film 100 (FIG. 9) of the polarizing beam splitter PBS whose 45 degrees are set to 45 degrees. For this reason, the polarizing film 93 of FIG. 8 can be made into a simple structure by having few periodic layers compared with the polarizing film 100 of FIG. 9, and can reduce the manufacturing cost of polarizing beam splitter PBS. have.

Moreover, in 1st Embodiment, the polarizing film 93 can be fixed suitably between the 1st prism 91 and the 2nd prism 92 by an adhesive agent or an optical contact. In addition, in the first embodiment, the polarizing beam splitter PBS and the quarter wave plate 41 may be integrally fixed by an adhesive or an optical contact. In this case, the occurrence of relative positional shift between the polarization beam splitter PBS and the quarter wave plate 41 can be suppressed.

Further, in the first embodiment, since the i-line or less wavelength can be used as the illumination light flux EL1, and a harmonic laser or an excimer laser can be used, for example, the illumination light flux EL1 suitable for the exposure process is selected. It becomes possible to use.

Moreover, since 1st Embodiment can adjust the illuminance of projection area | region PA by adjusting the polarization direction of the quarter wave plate 41 by the polarization adjustment mechanism 68, several projection area | region PA1 Roughness of ˜PA6) can be made uniform.

Second Embodiment

Next, with reference to FIG. 13, the exposure apparatus U3 of 2nd Embodiment is demonstrated. In addition, only the part different from 1st Embodiment is demonstrated so that the description which overlaps, and the same component as 1st Embodiment is attached | subjected and demonstrated with the same code | symbol as 1st Embodiment. FIG. 13: is a figure which shows the whole structure of the exposure apparatus (substrate processing apparatus) of 2nd Embodiment. The exposure apparatus U3 of the first embodiment was configured to hold the cylindrical reflective mask M by the rotatable mask holding drum 21, but the exposure apparatus U3 of the second embodiment has The mask mask mechanism 11 is configured to hold the flat reflective mask MA by the movable mask holding mechanism 11.

In the exposure apparatus U3 of 2nd Embodiment, the mask holding mechanism 11 orthogonally masks the mask stage 110 holding the mask MA of planar shape, and the mask stage 110 with the center plane CL. And a moving device (not shown) for scanning movement along the X direction.

Since the mask surface P1 of the mask MA of FIG. 13 is a plane substantially parallel to the XY plane, the main light ray of the projection light beam EL2 reflected from the mask MA becomes perpendicular to the XY plane. For this reason, the main light ray of illumination light beam EL1 from illumination optical system IL1-IL6 which illuminates each illumination area | region IR1-IR6 on mask MA is also arrange | positioned so that it may become perpendicular | vertical with respect to an XY plane.

When the main light beam of the projection light beam EL2 reflected by the mask MA is perpendicular to the XY plane, the first line L1 and the second line partitioning the placement area E according to the main light beam of the projection light beam EL2. Line L2 also changes. In other words, the second line L2 is a direction perpendicular to the XY plane from the intersection where the main rays of the mask MA and the projection light beam EL2 intersect, and the first line L1 projects the mask MA and the projection line. From the intersection where the chief rays of light beam EL2 intersect, the direction becomes parallel to the XY plane. For this reason, the arrangement of the illumination optical module ILM is appropriately changed in accordance with the change of the arrangement area E, and the arrangement of the polarization beam splitter PBS is also appropriately changed in accordance with the change of the arrangement of the illumination optical module ILM. .

Moreover, when the chief ray of the projection light beam EL2 reflected from the mask MA becomes perpendicular to the XY plane, the first deflection member 70 included in the first optical system 61 of the projection optical module PLM is made. The first reflecting surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS, and passes the reflected projection light beam EL2 through the first lens group 71 to form the first concave mirror 72. Is an angle to enter. Specifically, the first reflecting surface P3 of the first deflection member 70 is substantially set to 45 ° with respect to the second optical axis BX2 (XY surface).

In addition, also in 2nd Embodiment, similarly to FIG. 2, from the center point of illumination area | region IR1 (and IR3, IR5) on the mask MA, when viewed in XZ plane, illumination area | region IR2 ( And the circumferential length to the center point of IR4, IR6) is the second projection area PA2 from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2. (And PA4, PA6)) are set substantially the same as the circumferential length to the center point.

Also in the exposure apparatus U3 of FIG. 13, the lower-order control apparatus 16 controls the moving apparatus (linear motor for scanning exposure, an actuator for fine movements, etc.) of the mask holding mechanism 11, and the board | substrate supporting drum 25 The mask stage 110 is driven in synchronism with the rotation. In the exposure apparatus U3 of FIG. 13, after scanning exposure by synchronous movement of the mask MA in the + X direction, an operation (rewind) of returning the mask MA to the initial position in the -X direction is necessary. . Therefore, in the case where the substrate supporting drum 25 is continuously rotated at a constant speed and the substrate P is continuously sent at a constant speed, pattern exposure is not performed on the substrate P during the rewinding operation of the mask MA. Instead, the pattern for the panel is formed spacingly (distally) with respect to the conveyance direction of the substrate P. As shown in FIG. However, in practice, since the speed of the substrate P (in this case, the circumferential speed) and the speed of the mask MA at the time of scanning exposure are considered to be 50 mm / s to 100 mm / s, when rewinding the mask MA, When the mask stage 110 is driven at a maximum speed of, for example, 500 mm / s, the margin of the conveyance direction between the pattern for panels formed on the substrate P can be narrowed.

[Third Embodiment]

Next, with reference to FIG. 14, the exposure apparatus U3 of 3rd Embodiment is demonstrated. In addition, only the parts different from 1st Embodiment (or 2nd Embodiment) are demonstrated so that the description which overlaps, and about 1st Embodiment (or 2nd Embodiment), the same component as 1st Embodiment It demonstrates by attaching | subjecting the same code | symbol as (or 2nd Embodiment). FIG. 14: is a figure which shows the structure of the exposure apparatus (substrate processing apparatus) of 3rd Embodiment. The exposure apparatus U3 of FIG. 14 is similar to each of the previous embodiments, on the flexible substrate P to which the reflected light (projection light beam EL2) from the reflective cylindrical mask M is conveyed in a planar shape. It is a scanning exposure apparatus which synchronizes the circumferential speed by rotation of the cylindrical mask M, and the conveyance speed of the board | substrate P, projecting to the upper surface.

The exposure apparatus U3 according to the third embodiment is an example of an exposure apparatus in the case where the reflection / transmission characteristics of the illumination light beam EL1 and the projection light beam EL2 in the polarization beam splitter PBS are reversed. In FIG. 14, among the relay lenses 56 arranged along the optical axis BX1 of the illumination optical module ILM, at least the relay lens 56 closest to the polarization beam splitter PBS passes through the illumination light beam EL1. The spatial interference with the projection optical module PLM is avoided by making the shape which does not have the part (non-incident area | region S1) which does not have. Moreover, the extension line of the optical axis BX1 of the illumination optical module ILM cross | intersects the 1st axis | shaft AX1 (the line used as rotation center).

The polarizing beam splitter PBS is arranged such that the second surface D2 and the fourth surface D4 parallel to each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, and One surface D1 is disposed to be perpendicular to the optical axis BX4 (fourth optical axis) of the projection optical module PLM. The intersection angle in the XZ plane between the optical axis BX1 and the optical axis BX4 is the same as the condition of FIG. 6 before the polarizing film 93, but here the projection light beam EL2 is defined by the Brewster angle θB (52.4 °). 57.3 degrees), so as to reflect at an angle other than 90 degrees.

The polarizing film 93 (wavefront dividing surface) of the polarizing beam splitter PBS in this embodiment can be formed by laminating a plurality of first film bodies of silicon dioxide and a second film body of hafnium oxide in the film thickness direction. Therefore, the polarizing film 93 can make the reflectance of S polarization incident on the polarizing film 93 high, and the transmittance | permeability of P polarization incident on the polarizing film 93 high. As a result, the polarization beam splitter PBS applies a load to the polarization film 93 even when the illumination light beam EL1 having a high energy density, which is a wavelength of i-line or less, is incident on the polarization film 93. It can suppress and can isolate | separate preferably into a reflected light beam and a transmitted light beam. The polarizing film 93 has a laminated structure between the first film H1 of silicon dioxide and the second film H2 of hafnium oxide, which is used in the first or second embodiment of the present invention. The same applies to PBS).

In the third embodiment, the illumination light beam EL1 of P-polarized light enters from the fourth surface D4 of the polarization beam splitter PBS. Therefore, the illumination light beam EL1 passes through the polarizing film 93 and exits from the second surface D2, passes through the quarter wave plate 41, and is converted into circularly polarized light. It is irradiated to the illumination area | region IR on the mask surface P1. In accordance with the rotation of the mask M, the projection light beam EL2 (circularly polarized light) generated (reflected) from the mask pattern appearing in the illumination region IR is converted into S-polarized light by the quarter wave plate 41. Incident on the second surface D2 of the polarizing beam splitter PBS. The projection light beam EL2 which has become S-polarized light is reflected by the polarizing film 93 and exits from the first surface D1 of the polarizing beam splitter PBS toward the projection optical module PLM.

In the present embodiment, among the projection light beams EL2, the chief ray Ls passing through the center (point Q1) of the illumination region IR on the mask M is the optical axis BX4 of the projection optical module PLM. At the position eccentric from the side, it enters the first lens system G1 of the projection optical module PLM. When the spread (aperture number NA) of the projection light beam EL2 is small, the polarizing beam splitter PBS is formed by removing the portion of the lens system G1 from which the projection light beam EL2 does not substantially pass. In the case of bringing it closer to the cylindrical mask M, a part of the projection optical module PLM (lens system G1) is spatially separated from a part of the cylindrical mask M or the illumination optical module ILM (lens 56). Interference is avoided.

In FIG. 14, the projection optical module PLM is described as a projection optical system of an all refractive system in which the lens system G1 and the lens system G2 are disposed along the optical axis BX4. However, the projection optical module PLM is not limited to this system. Or a convex surface, or a reflection-optical projection optical system in which a planar mirror and a lens are combined. The lens system G1 may be a full refractometer, and the lens system G2 may be a reflective refractometer, and an image of a pattern in the illumination region IR on the mask surface P1 may be used. The magnification at the time of forming an image on the projection area PA on the substrate P may be either enlargement or reduction other than equal magnification (× 1).

In FIG. 14, the board | substrate support member PH which supports the board | substrate P is made into the flat surface, and the air bearing layer (gas bearing) about several micrometers is provided between the surface and the back surface of the board | substrate P. In FIG. In a predetermined range including at least the projection area PA of the substrate P, a predetermined tension is applied to the substrate P by using a nip drive roller or the like to be flat. The conveyance mechanism which sends the board | substrate P to a long direction (X direction) is provided. Of course, also in this embodiment, the structure which winds and conveys the board | substrate P around a part of cylindrical bodies like the board | substrate support drum 25 as shown in FIG. 2 above may be conveyed.

Moreover, as shown in FIG. 14, the exposure unit comprised from the illumination optical module ILM, the polarizing beam splitter PBS, the quarter wave plate 41, and the projection optical module PLM, is a rotation center of the mask M. As shown in FIG. In the case of providing a plurality in the direction of the axis (first axis) AX1 and multiplying, the center plane CL including the first axis AX1 which is the rotation center line of the mask M and parallel to the ZY plane is provided. It is good to arrange an exposure unit symmetrically in between.

In the above 3rd Embodiment, the illumination light beam EL1 is used by using the polarizing beam splitter PBS provided with the polarizing film (multilayer film) 93 by the laminated structure of the film | membrane of hafnium oxide and the film | membrane of silicon dioxide. Even in the case of using a laser beam having a high luminance in the ultraviolet wavelength range, the high-resolution pattern exposure can be continued stably. The polarizing beam splitter PBS provided with such a polarizing film 93 can be similarly used in the first and second embodiments described above.

[4th Embodiment]

Next, with reference to FIG. 15, the exposure apparatus U3 of 4th Embodiment is demonstrated. In addition, only the parts different from 1st Embodiment (to 3rd Embodiment) are demonstrated, and about the same component as 1st Embodiment (to 3rd Embodiment), 1st Embodiment is described so that overlapping description may be avoided. The same code | symbol as (the 3rd embodiment) is attached | subjected and it demonstrates. FIG. 15: is a figure which shows the whole structure of the exposure apparatus (substrate processing apparatus) of 4th Embodiment. Although the exposure apparatus U3 of 1st Embodiment was a structure which holds the mask M of cylindrical reflection type by the rotatable mask holding drum 21, the exposure apparatus U3 of 4th Embodiment is The mask MA of the flat reflection type is held by the movable mask holding mechanism 11.

In the exposure apparatus U3 of 4th Embodiment, the mask holding mechanism 11 orthogonally masks the mask stage 110 holding the mask MA of planar shape, and the mask stage 110 with the center plane CL. And a moving device (not shown) for scanning movement along the X direction.

Since the mask surface P1 of the mask MA of FIG. 15 is a plane substantially parallel to the XY plane, the main light ray of the projection light beam EL2 reflected from the mask MA becomes perpendicular to the XY plane. For this reason, the main light ray of illumination light beam EL1 from illumination optical system IL1-IL6 which illuminates each illumination area | region IR1-IR6 on mask MA is also arrange | positioned so that it may become perpendicular | vertical with respect to an XY plane.

When the main light beam of the illumination light beam EL1 illuminated by the mask MA is perpendicular to the XY plane, the polarization beam splitter PBS has an incident angle θ1 of the main light beam of the illumination light beam EL1 incident on the polarization film 93. ) Is the Brewster angle θB (52.4 ° to 57.3 °), and the main rays of the illumination light beam EL1 reflected by the polarizing film 93 are disposed so as to be perpendicular to the XY plane. In accordance with the change of the arrangement of the polarizing beam splitter PBS, the arrangement of the illumination optical module ILM is also appropriately changed.

Moreover, when the chief ray of the projection light beam EL2 reflected from the mask MA becomes perpendicular to the XY plane, the first deflection member 70 included in the first optical system 61 of the projection optical module PLM is made. The first reflecting surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS, and passes the reflected projection light beam EL2 through the first lens group 71 to form the first concave mirror 72. Is an angle to enter. Specifically, the first reflecting surface P3 of the first deflection member 70 is substantially set to 45 ° with respect to the second optical axis BX2 (XY surface).

Moreover, also in 4th Embodiment, similarly to FIG. 2, from the center point of illumination area | region IR1 (and IR3, IR5) on the mask MA, when viewed in XZ plane, illumination area | region IR2 ( And the circumferential length to the center point of the IR4, IR6) is the projection area PA2 (and the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2. PA4 and PA6) are set substantially the same as the circumferential length to the center point.

Also in the exposure apparatus U3 of FIG. 15, the lower control apparatus 16 controls the movement apparatus (scanning exposure linear motor, a micromotor, etc.) of the mask holding mechanism 11, and rotation of the board | substrate support drum 25 In synchronization with the driving mask stage 110. In the exposure apparatus U3 of FIG. 15, after performing scanning exposure by synchronous movement of the mask MA in the + X direction, an operation (rewinding) of returning the mask MA to the initial position in the -X direction is necessary. . Therefore, in the case where the substrate supporting drum 25 is continuously rotated at a constant speed and the substrate P is continuously sent at a constant speed, the pattern exposure is not performed on the substrate P during the rewinding operation of the mask MA. The pattern for panels is spaced apart with respect to the conveyance direction of P). However, in practice, since the speed of the substrate P (in this case, the circumferential speed) and the speed of the mask MA at the time of scanning exposure are considered to be 50 mm / s to 100 mm / s, when rewinding the mask MA, When the mask stage 110 is driven at a maximum speed of, for example, 500 mm / s, the margin of the conveyance direction between the pattern for panels formed on the substrate P can be narrowed.

[The fifth embodiment]

Next, with reference to FIG. 16, the exposure apparatus U3 of 5th Embodiment is demonstrated. In addition, only the parts different from 1st Embodiment (to 4th Embodiment) are demonstrated, and about the same component as 1st Embodiment (to 4th Embodiment) so that the description which overlaps is 1st Embodiment. The same code | symbol as (the 4th embodiment) is attached | subjected and it demonstrates. FIG. 16: is a figure which shows the structure of the exposure apparatus (substrate processing apparatus) of 5th Embodiment. The exposure apparatus U3 of 5th Embodiment is an example of the exposure apparatus in the case where the reflection / transmission characteristic of illumination light beam EL1 and projection light beam EL2 in polarizing beam splitter PBS is reversed. In FIG. 16, among the relay lenses 56 arranged along the optical axis BX1 of the illumination optical module ILM, at least the relay lens 56 closest to the polarization beam splitter PBS passes through the illumination light beam EL1. By notching a portion not to be used, spatial interference with the projection optical module PLM is avoided. Moreover, the extension line of the optical axis BX1 of the illumination optical module ILM cross | intersects the 1st axis | shaft AX1 (the line used as rotation center).

The polarizing beam splitter PBS is arranged such that the second surface D2 and the fourth surface D4 parallel to each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, and One surface D1 is disposed to be perpendicular to the optical axis BX4 (fourth optical axis) of the projection optical module PLM. The crossing angle in the XZ plane between the optical axis BX1 and the optical axis BX4 is the same as that in FIG. 6 in front of the polarizing film 93, in which the projection light beam EL2 is defined by the Brewster angle θB (52.4 °). 57.3 degrees), so as to reflect at an angle other than 90 degrees.

In the case of this embodiment, the illumination light beam EL1 of P polarization | polarized-light enters from the 4th surface D4 of polarizing beam splitter PBS. Therefore, the illumination light beam EL1 passes through the polarizing film 93 and exits from the second surface D2, passes through the quarter wave plate 41, and is converted into circularly polarized light. It is irradiated to the illumination area | region IR on the mask surface P1. In accordance with the rotation of the mask M, the projection light beam EL2 (circularly polarized light) generated (reflected) from the mask pattern appearing in the illumination region IR is converted into S-polarized light by the quarter wave plate 41. Incident on the second surface D2 of the polarizing beam splitter PBS. The projection light beam EL2 which has become S-polarized light is reflected by the polarizing film 93 and exits from the first surface D1 of the polarizing beam splitter PBS toward the projection optical module PLM.

In the present embodiment, the main light beam Ls passing through the center of the illumination region IR on the mask M is eccentric from the optical axis BX4 of the projection optical module PLM in the projection light beam EL2. At one position, it enters the first lens system G1 of the projection optical module PLM. When the spread (aperture number NA) of the projection luminous flux EL2 is small, by notching a portion of the lens system G1 where the projection luminous flux EL2 does not pass, with the lens 56 of the illumination optical module ILM. Spatial interference can be avoided.

In FIG. 16, the projection optical module PLM is described as the projection optical system of the all-refractive system in which the lens system G1 and the lens system G2 are disposed along the optical axis BX4. However, the projection optical module PLM is not limited to this system. Or a convex surface, or a reflection-optical projection optical system in which a planar mirror and a lens are combined. The lens system G1 may be a full refractometer, and the lens system G2 may be a reflective refractometer, and an image of a pattern in the illumination region IR on the mask surface P1 may be used. The magnification at the time of forming an image on the projection area PA on the substrate P may be either enlargement or reduction other than equal magnification (× 1).

In FIG. 16, the board | substrate support member PH which supports the board | substrate P is made into the flat surface, and the air bearing layer (gas bearing) about several micrometers is provided between the surface and the back surface of the board | substrate P. In FIG. In the predetermined range including at least the projection area PA of the substrate P, the substrate P is elongated in the long direction (X direction) while giving a constant tension to the substrate P and making it flat. The conveyance mechanism to send by is provided. Of course, also in this embodiment, the structure which winds and conveys the board | substrate P around a part of cylindrical bodies like the board | substrate support drum 25 as shown in FIG. 2 above may be conveyed.

Moreover, as shown in FIG. 16, the exposure unit comprised from the illumination optical module ILM, the polarizing beam splitter PBS, the quarter wave plate 41, and the projection optical module PLM, is a rotation center of the mask M. As shown in FIG. In the case of providing a plurality in the direction of the axis (first axis) AX1 and multiplying, the center plane CL including the first axis AX1 which is the rotation center line of the mask M and parallel to the ZY plane is provided. It is good to arrange an exposure unit symmetrically in between.

Even in the exposure apparatus U3 like 5th Embodiment mentioned above, using the polarizing beam splitter PBS provided with the polarizing film (multilayer film) 93 by the laminated structure of the film | membrane body of hafnium oxide and the film | membrane body of silicon dioxide. Thereby, even when using the laser beam of the high luminance of an ultraviolet wavelength range as illumination light beam EL1, high-resolution pattern exposure can be continued stably.

Although the exposure apparatus U3 demonstrated in each embodiment mentioned above uses the mask M which fixed the predetermined mask pattern to planar shape or cylinder shape, the apparatus which projects and exposes a variable mask pattern, for example, a patent As the beam splitter of the maskless exposure apparatus disclosed in heading 4203036, the same can be used.

The exposure apparatus without the mask includes a programmable mirror array that receives illumination light for exposure reflected by the beam splitter, and a beam (reflected light beam) patterned by the mirror array, and a beam splitter and a projection system (microlens array). It may be included), the configuration is projected on the substrate. As the beam splitter of the exposure apparatus without such a mask, using a polarizing beam splitter (PBS) as shown in FIG. 8 above, high-resolution pattern exposure can be stably performed even when high-intensity laser light in the ultraviolet wavelength range is used as illumination light. You can continue.

The polarizing beam splitter (PBS) used in each of the above embodiments is a polarizing film 93, which is formed by repeating a film body whose main component is silicon dioxide (SiO ₂ ) and a film body whose main component is hafnium oxide (HfO ₂ ) in the film thickness direction. Although it was comprised by lamination | stacking, other materials may be sufficient. For example, similarly to quartz or silicon dioxide (SiO 2), magnesium fluoride (MgF ₂ ), which is a material having high resistance to ultraviolet laser light, can be used as a low refractive index for ultraviolet rays near a wavelength of 355 nm. Similar to hafnium oxide (HfO ₂ ), zirconium oxide (ZrO ₂ ), which is a material having high resistance to ultraviolet laser light, can be used as a high refractive index for ultraviolet rays near a wavelength of 355 nm. Here, the result of the simulation about the characteristic of the polarizing film 93 which can change the combination of these materials is demonstrated based on following FIGS. 17-22.

FIG. 17 schematically shows the configuration of a polarizing film 93 when a film of hafnium oxide (HfO ₂ ) is used as a material of high refractive index and a film of magnesium fluoride (MgF ₂ ) is used as a material of low refractive index. Represented by cross section. When the refractive index nh of hafnium oxide is 2.07, the refractive index nL of magnesium fluoride is 1.40, and the refractive index ns of prism (quartz glass) is 1.47, Brewster angle θB is

from ^{θB = arcsin ([(nh 2} × nL 2) / {ns 2 (nh 2 + nL 2)}] 0.5), it is about 52.1 °.

Here, the polarizing film 93 which laminated | stacked the film body of hafnium oxide which is 22.8 nm thick, and laminated | stacked for 21 cycles was made into the periodic layer above and below the film body of magnesium fluoride of thickness 78.6 nm. It is provided between the joining surface of the prism 91 and the 2nd prism 92. In the polarization beam splitter (PBS) provided with the polarizing film 93 shown in FIG. 17, the optical characteristics as shown in FIG. 18 were obtained as a result of the simulation. When the wavelength of the illumination light of the simulation image is 355 nm, the incident angle θ1 at which the reflectance Rp for P polarized light becomes 5% or less (transmittance Tp is 95% or more) becomes 43.5 ° or more, and the reflectance for S polarized light The incident angle θ1 at which Rs is 95% or more (transmittance Ts is 5% or less) is 59.5 ° or less. Also in this example, with respect to Brewster angle θB (52.1 °), good polarization separation characteristics can be obtained in a range of about 15 ° from −8.6 ° to + 7.4 °.

19 shows the structure of the polarizing film 93 when the film body of zirconium oxide (ZrO ₂ ) is used as a material of high refractive index, and the film body of silicon dioxide (SiO ₂ ) is used as a material of low refractive index. It is a cross section shown as an enemy. When refractive index nh of zirconium oxide is 2.12, refractive index nL of silicon dioxide is 1.47, and refractive index ns of prism (quartz glass) is 1.47, Brewster angle (theta) B becomes about 55.2 degrees from said formula.

Here, the polarizer film 93 obtained by stacking a film body of zirconium oxide having a thickness of 20.2 nm having a thickness of 20.2 nm thick as the main layer, and stacking this for 21 cycles is formed on the first prism. It is provided between the joining surface of 91 and the 2nd prism 92. In the polarization beam splitter PBS provided with the polarizing film 93 shown in this FIG. 19, the optical characteristic like FIG. 20 was obtained as a result of a simulation. When the wavelength of illumination light on the simulation image is 355 nm, the incident angle θ1 at which the reflectance Rp for P polarization becomes 5% or less (transmittance Tp is 95% or more) becomes 47.7 °, and the reflectance Rs for S polarization is The incident angle [theta] 1 at which 95% or more (transmittance Ts is 5% or less) is 64.1 degrees. Also in this example, favorable polarization separation characteristics can be obtained in the range of about 16.4 ° from -7.5 ° to + 8.9 ° with respect to Brewster's angle θB (55.2 °).

21 shows the structure of the polarizing film 93 in the case of using a film body of zirconium oxide (ZrO ₂ ) as the material of high refractive index and using a film body of magnesium fluoride (MgF ₂ ) as the material of low refractive index. It is a cross section shown typically. When refractive index nh of zirconium oxide is 2.12, refractive index nL of magnesium fluoride is 1.40, and refractive index ns of prism (quartz glass) is 1.47, Brewster angle (theta) B becomes about 52.6 degrees from said formula.

Here, the polarizing film 93 which laminated | stacked 21 cycles the film body which laminated | stacked the film body of zirconium oxide of 22.1 nm in thickness above and below the film body of magnesium fluoride of thickness 77.3 nm as 1st period is 1st. It is provided between the joining surface of the prism 91 and the 2nd prism 92. In the polarization beam splitter PBS provided with the polarizing film 93 shown in this FIG. 21, the optical characteristics like FIG. 22 were obtained as a result of a simulation. When the wavelength of illumination light in the simulation image is 355 nm, the incident angle θ1 at which the reflectance Rp for P polarization becomes 5% or less (transmittance Tp is 95% or more) becomes 43.1 °, and the reflectance Rs for S polarization is The incident angle θ1 at which 95% or more (transmittance Ts is 5% or less) is 60.7 °. Also in this example, favorable polarization separation characteristics can be obtained in the range of about 17.6 ° from -9.5 ° to + 8.1 ° with respect to Brewster's angle θB (52.6 °).

As shown in FIG. 4, the projection light beam EL2 reflected by the mask M is applied to the substrate P along the spread angle θna, which is limited to the numerical aperture NA of the projection optical system PL of equal magnification. Projected. The numerical aperture NA is defined by NA = sin (θna), and determines the resolution RS of the projected image by the projection optical system PL together with the wavelength λ of the illumination light flux EL1. The numerical aperture of the illumination light beam EL1 is also the same as the numerical aperture NA on the mask M side of the projection optical system PL when the mask M is a flat mask surface P1 as shown in FIG. It is set as follows.

For example, when the wavelength? Of the illumination light beam EL1 is 355 nm and the process factor k is 0.5 and 3 µm is obtained as the resolution RS, the projection optical system PL is multiplied by RS = k · (λ / NA). The numerical aperture NA on the side of the mask is about 0.06 (θna ≒ 3.4 °). The numerical aperture of the illumination light beam EL1 from the illumination optical system IL is generally slightly smaller than the numerical aperture NA on the mask M side of the projection optical system PL, but is assumed to be the same here.

By the way, as previously demonstrated in FIG. 5A, when the mask surface P1 is the cylindrical mask M formed along the cylindrical surface of radius Rm, the principal ray of the illumination light beam EL1 is the circumference | surroundings of the cylindrical mask M. FIG. As for the direction, it is spread out at a wider angle. Here, if the exposure width in the circumferential direction of the illumination region IR on the mask image shown in FIG. 3 is De, exposure width with respect to the main light ray of the illumination light beam EL1 which passes through the point Q1 in FIG. 5A is exposed. The chief ray of illumination light beam EL1 which passes through the most end part in the circumferential direction of De is generally inclined by the following angle (phi).

sinφ ≒ (De / 2) / (Rm / 2)

Here, when the radius of curvature Rm of the cylindrical mask M is 150 mm and the exposure width De is 10 mm, the angle φ is about 3.8 °. In addition, the angle θna (about 3.4 °) of the numerical aperture of the illumination light flux EL1 is added to the main light beam of the illumination light flux EL1 passing through the most end portion in the circumferential direction of the exposure width De. Therefore, the spread angle of the illumination light beam EL1 to the illumination region IR takes the range of +/- (na) +/- na with respect to the chief ray of the illumination light beam EL1 which passes through the point Q1. That is, in the numerical example described above, it becomes ± 7.2 °, and the illumination light flux EL1 is distributed over an angle range of 14.4 ° with respect to the circumferential direction of the cylindrical mask surface.

Thus, although the illumination light beam EL1 is set so that it may inject into the cylindrical mask surface P1 along a comparatively large angle range, even if it is such an angle range, the polarization beam splitter PBS of embodiment shown in FIG. 8, FIG. 10 mentioned above. ) And the polarization beam splitter PBS of the embodiment shown in FIGS. 17-22, the illumination light beam EL1 and the projection light beam EL2 can be polarized-separated favorably.

In the exposure apparatus in which the projection optical system PL enlarges and projects the pattern of the mask surface P1 onto the substrate P, the numerical aperture NAm on the mask surface P1 side of the projection optical system PL is The numerical aperture NAp on the substrate P side is increased by the magnification Mp. For example, if the same resolution is obtained as the resolution RS obtained in the projection optical system of equal magnification described above, the numerical aperture NA on the mask side of the projection optical system with an enlarged magnification Mp is about 0.12, and the projection light flux EL2 The spread angle θna of) is also increased to ± 6.8 ° (14.6 ° in width). However, the incidence angle range that can be satisfactorily polarized in the polarization beam splitter PBS is about 14.6 ° in FIG. 10, about 16 ° in FIG. 18, about 16.4 ° in FIG. 20, and FIG. In the case of 22, it becomes about 17.6 degrees, and since it covers the spreading angle (theta) na in any case, an enlarged projection exposure can be performed with favorable image quality.

As mentioned above, when making mask M into a cylindrical mask, the largest angle range regarding the circumferential direction of illumination light beam EL1 irradiated to illumination area | region IR on mask surface P1 is covered. Preferably, the polarization beam splitter PBS in the incidence angle range including the Brewster angle θB having good polarization separation characteristics is selected. The Brewster angles θB of the polarizing beam splitters PBS illustrated in FIGS. 17 to 22 are all 50 ° or more, and as shown in FIGS. 4 and 6, the optical axis BX1 and the projection optical system of the illumination optical system IL are shown. Even when the optical axis BX2 (or BX3) of the PL is made parallel, the illumination light flux EL1 directed to the cylindrical mask M and the projection in the XZ plane of the projection light flux EL2 reflected from the mask surface The direction can be inclined with respect to the center plane CL, and good imaging performance can be ensured.

In each of the above embodiments, the film of hafnium oxide or film of zirconium oxide constituting the polarizing film 93 shows a high refractive index nh with respect to light in the ultraviolet region (wavelength of 400 nm or less). The ratio nh / ns to the refractive index ns of the substrate (prisms 91 and 92) may be 1.3 or more, and as a high refractive index material, a film of titanium dioxide (TiO ₂ ) and a film of tantalum pentoxide (Ta ₂ O ₅ ) Sieves are also available.

1 device manufacturing system 2 substrate supply apparatus
4 substrate recovery device 5 upper controller
11 mask holding mechanism 12 substrate supporting mechanism
13 light source device 16 lower control device
21 mask holding drum 25 substrate supporting drum
31: light source 32: light guide member
41: 1/4 wave plate 51: collimator lens
52: fly's eye lens 53: condenser lens
54: cylindrical lens 55: illumination field of view aperture
56a to 56d: relay lens 61: first optical system
62: second optical system 63: projection field aperture
64: focus correction optical member 65: optical member for image shift
66: optical member for magnification correction 67: rotation correction mechanism
68: polarization adjusting mechanism 70: first deflection member
71: first lens group 72: first concave mirror
80: second deflection member 81: second lens group
82: second concave mirror 91: first prism
92: second prism 93: polarizing film
110; Mask stage (2nd embodiment) P: substrate
FR1: Roll for Supply FR2: Roll for Recovery
U1 ~ Un: processing unit
U3: exposure apparatus (substrate processing apparatus)
M: Mask MA: Mask (2nd Embodiment)
AX1: 1st axis AX2: 2nd axis
P1: mask surface P2: support surface
P7: Middle Top EL1: Illumination Beam
EL2: Projected luminous flux Rm: Curvature radius
Rfa: radius of curvature CL: center plane
PBS: Polarizing Beam Splitter IR1-IR6: Illumination Area
IL1 ~ IL6: Illumination Optics ILM: Illumination Optics Module
PA1 to PA6: Projection Area PL1 to PL6: Projection Optical System
PLM: projection optical module BX1: first optical axis
BX2 Second optical axis BX3: Third optical axis
D1: first side of the polarizing beam splitter (PBS)
D2: second side of polarizing beam splitter (PBS)
D3: third side of the polarizing beam splitter (PBS)
D4: fourth side of the polarizing beam splitter (PBS)
θ: angle θ1 (β): incident angle
θB: Brewster angle S1: nonincident area
S2: incident region H: layered
H1: first membrane H2: second membrane

Claims (4)

A cylindrical mask having a reflective mask pattern formed along a first circumferential surface that becomes a first radius of curvature from a first axis is rotated around the first axis to project the image of the mask pattern onto a photosensitive substrate. As a substrate processing apparatus to expose,
An illumination optical module for irradiating an illumination light beam toward an illumination region set on the mask pattern of the cylindrical mask;
For forming an image of the mask pattern in a projection area set on the substrate by injecting a projection light beam reflected from the illumination area on the mask pattern by irradiation of the illumination light beam. Projection optical module,
In addition to being in the optical path between the illumination optical module and the mask pattern, disposed in the optical path between the mask pattern and the projection optical module, the illumination light beam from the illumination optical module is incident to the mask pattern A polarizing beam splitter which reflects and transmits the projection light beam from the mask pattern toward the projection optical module;
The substrate has a second axis disposed in parallel with the first axis of the cylindrical mask, and is bent and supported along a second circumferential surface that becomes a second radius of curvature from the second axis. A cylindrical substrate support member which rotates to move the substrate in a circumferential direction along the second circumferential surface,
When the surface which passes the said 1st axis | shaft and said 2nd axis | shaft is a center plane, the said illumination optical module and the said polarization beam splitter are between the said cylindrical mask and the said projection optical module, and with respect to the said center plane I am placed on one side and placed,
The polarizing beam splitter includes a first prism, a second prism having a surface opposite to one surface of the first prism, and a light beam directed from the first prism toward the second prism according to the polarization state. It has a polarizing film provided between the said 1st prism and the said opposing surface of a said 2nd prism, in order to isolate | separate into the reflected light beam reflected to a 1st prism side, or the transmitted light beam transmitted to a said 2nd prism side,
The polarizing film has a first refractive index greater than the refractive indices of the first prism and the second prism at the center wavelength λ such that the Brewster angle at the center wavelength λ of the illumination light beam is 50 ° or more. A first film body and a second film body having a second refractive index smaller than the first refractive index at the wavelength? Are repeatedly stacked in a film thickness direction,
When the angle formed in the circumferential direction of the first circumferential surface between the main light ray passing through the center point of the illumination region and the center plane among the chief rays of the illumination light beam is θ (θ ≠ 0), the incident light enters the polarizing beam splitter. The substrate processing apparatus which set the incidence angle (beta) of the chief ray which passes through the center point of the said illumination area among the chief rays of the said illumination light beam in the range of 45 degrees <= (beta) <= (45 degrees + (theta) / 2). The method according to claim 1,
The illumination area is set so that the center point is symmetrically positioned at the angle θ in the circumferential direction of the first circumferential surface with respect to the center plane when viewed in a plane perpendicular to the first axis. And a second lighting area,
The illumination optical module includes a first illumination optical module corresponding to the first illumination region and a second illumination optical module corresponding to the second illumination region,
The polarization beam splitter includes a first polarization beam splitter corresponding to the first illumination region and a second polarization beam splitter corresponding to the second illumination region,
The projection optical module includes a first projection optical module for injecting the projection light beam from the first illumination region through the first polarization beam splitter and the second illumination via the second polarization beam splitter. And a second projection optical module for injecting the projection light beam from an area. The method according to claim 2,
The configuration by the first illumination optical module, the first polarization beam splitter, and the first projection optical module, and the configuration by the second illumination optical module, the second polarization beam splitter, and the second projection optical module, The substrate processing apparatus of this invention arrange | positioned symmetrically with the said center surface as seen from the surface perpendicular | vertical to a said 1st axis. The method according to claim 3,
The substrate processing apparatus of claim 1, wherein the first illumination region and the second illumination region set on the mask pattern are arranged at a predetermined interval with respect to the direction of the first axis.

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