TWI596652B - Polarizing beam splitter, substrate processing apparatus, component manufacturing system, and device manufacturing method - Google Patents

Description

Polarizing beam splitter, substrate processing apparatus, component manufacturing system, and component manufacturing method

The present invention relates to a polarizing beam splitter, a substrate processing apparatus, a component manufacturing system, and a component manufacturing method.

Conventionally, as a substrate processing apparatus, an exposure apparatus that irradiates a reflective cylindrical reticle (photomask) with exposure light and projects exposure light reflected from the reticle onto a photosensitive substrate (wafer) is known. (See, for example, Patent Document 1). The exposure apparatus of Patent Document 1 has a projection optical system that projects exposure light reflected from a photomask onto a wafer, and the projection optical system includes exposure light in an imaging optical path in accordance with a polarization state of the incident exposure light. It is composed of a transmissive or reflected polarizing beam splitter.

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-227438

In the exposure apparatus of Patent Document 1, the illumination beam from the illumination optical system is obliquely irradiated onto the cylindrical mask from a direction different from the projection optical system, and the exposure light (projection beam) reflected by the mask is incident on the projection optical system. . When the illumination optical system and the projection optical system are arranged as shown in Patent Document 1, the utilization efficiency of the illumination beam is low, and the photomask projected on the photosensitive substrate (wafer) is used. The image quality of the pattern is also poor. As an illumination form that efficiently maintains good image quality, there is a coaxial epi-illumination method. In this method, a light splitting element such as a half mirror or a beam splitter is disposed in an imaging optical path formed by the projection optical system, and the illumination beam is irradiated to the reticle through the light splitting element, and the projection beam reflected by the reticle is also It is guided to the photosensitive substrate through the light splitting element.

By using the epi-illumination method, when the illumination beam directed to the reticle is separated from the projection beam from the reticle, the loss of the amount of the illumination beam and the projection beam can be suppressed by using the polarization beam splitter as the light splitting element. The ground is less efficient and exposed.

However, in the case where the illumination beam is reflected (or transmitted) by the polarization beam splitter, and the projection beam is transmitted (or reflected), since the polarization beam splitter is shared in the illumination optical system and the projection optical system, there is illumination optics. The possibility of physically interfering with the projection optics.

Further, in the case where the polarizing beam splitter is used in the exposure apparatus of Patent Document 1, the polarizing film of the polarization beam splitter partially reflects one of the incident light beams and becomes a reflected light beam, and transmits a part of the light beam to be a transmitted light beam. At this time, the reflected beam or the transmitted beam is energy-depleted by being separated. Therefore, in order to suppress the energy loss of the reflected beam or the transmitted beam due to the separation, the incident beam incident on the polarizing film is preferably made to be laser light having the same wavelength and phase.

However, the energy density of laser light is high. Therefore, when the incident beam becomes laser light, if the reflectance of the reflected beam and the transmittance of the transmitted beam are low, the energy of the laser light is absorbed in the polarizing film, and the load applied to the polarizing film is increased. Therefore, when light having a high energy density such as laser light is used as the incident light beam, the resistance of the polarizing film of the polarizing beam splitter is liable to be lowered, so that it is difficult to preferably separate the incident light beam.

The present invention has been made in view of the above problems, and an object thereof is to provide Even when the illumination beam is separated from the projection beam by the polarization beam splitter, physical interference between the illumination optical system and the projection optical system can be suppressed, and the polarization beam splitter of the illumination optical system and the projection optical system can be easily arranged, A substrate processing apparatus (exposure apparatus), a component manufacturing system, and a component manufacturing method.

In view of the above-described problems, it is an object of the present invention to provide an incident light beam having a high energy density, thereby reducing the load applied to the polarizing film and partially reflecting the incident light beam. A reflected beam, a polarizing beam splitter that transmits a part of the incident beam to be a transmitted beam, a substrate processing apparatus, a component manufacturing system, and a device manufacturing method.

According to a first aspect of the present invention, a substrate processing apparatus (exposure apparatus) including: a mask holding member that holds a reflection type photomask; and a beam splitter that reflects an incident light beam toward the mask On the other hand, the projection beam obtained by reflecting the illumination beam by the reticle is transmitted; the illumination optical module is configured to inject the illumination beam into the beam splitter; and the projection optical module is transmitted through the beam splitter. The projection beam is projected onto the photosensitive substrate; the illumination beam guided to the reticle includes the illumination optical module and the beam splitter; and the projection optical system that guides the projection beam to the substrate includes The projection optical module and the beam splitter; the illumination optical module and the beam splitter are disposed between the photomask and the projection optical module.

According to a second aspect of the present invention, a component manufacturing system including: a substrate processing apparatus according to a first aspect of the present invention; and a substrate supply apparatus that supplies the substrate to the substrate processing apparatus.

According to a third aspect of the present invention, a method of manufacturing a component, comprising: An operation of projecting and exposing the substrate by the substrate processing apparatus according to the first aspect of the present invention; and an operation of forming the pattern of the photomask on the substrate by processing the substrate that is projected and exposed.

According to a fourth aspect of the present invention, a substrate processing apparatus (exposure apparatus) includes: a mask holding member that holds a reflection type photomask; and a beam splitter that transmits the incident illumination beam to the mask. And the illumination beam is reflected by the projection beam obtained by being reflected by the reticle; the illumination optical module is configured to inject the illumination beam into the beam splitter; and the projection optical module is reflected by the beam splitter The projection light beam is projected on the light-sensitive substrate; the illumination light beam is guided to the illumination optical system of the light cover, and includes the illumination optical module and the beam splitter; and the projection optical system for guiding the projection light beam to the substrate, including the foregoing The projection optical module and the beam splitter; the illumination optical module and the beam splitter are disposed between the photomask and the projection optical module.

According to a fifth aspect of the present invention, there is provided a polarizing beam splitter comprising: a first turn; a second turn having a face facing the first one; and a polarizing film for The incident light beam from the first 稜鏡 to the second 分离 is separated into a reflected light beam that is reflected toward the first 稜鏡 side or a transmitted light beam that is transmitted toward the second 稜鏡 side according to a polarization state, and is provided in the foregoing Between the first surface and the opposite surface of the second layer, a first film body mainly composed of cerium oxide and a second film body mainly composed of cerium oxide are laminated in the film thickness direction. .

According to a sixth aspect of the present invention, a substrate processing apparatus includes: a mask holding member that holds a reflective type mask; an illumination optical module that guides an illumination beam to the mask; and a projection optical module that The projection beam of the illumination beam is reflected by the reticle a polarizing beam splitter according to a first aspect of the present invention, which is disposed between the illumination optical module and the photomask, and disposed between the photomask and the projection optical module And a wavelength plate; the incident angle of the illumination beam incident on the polarizing film of the polarizing beam splitter is a predetermined angular range including a Brewster angle of 52.4° to 57.3°; and the polarizing beam splitter is used to move the illumination beam to the foregoing The light guide transmits and transmits the projection beam to the projection optical module. The wavelength plate polarizes the illumination beam from the polarization beam splitter and further polarizes the projection beam from the mask.

According to a seventh aspect of the present invention, a component manufacturing system comprising: a substrate processing apparatus according to a sixth aspect of the present invention; and a substrate supply apparatus that supplies the workpiece to the substrate processing apparatus.

According to an eighth aspect of the present invention, a method of manufacturing a device, comprising: projecting an exposure of the object to be projected using a substrate processing apparatus according to a sixth aspect of the present invention; and projecting the projected projection by the projection The action of forming the pattern of the reticle.

According to an aspect of the present invention, it is possible to suppress the physical properties of the illumination optical system and the projection optical system even when the illumination beam is separated from the projection beam by the polarization beam splitter shared by the illumination optical system and the projection optical system. The polarizing beam splitter, the substrate processing apparatus, the element manufacturing system, and the element manufacturing method of the illumination optical system and the projection optical system can be easily arranged to interfere.

Further, according to the aspect of the present invention, it is possible to provide a polarizing beam splitter or a substrate which can reduce the load applied to the polarizing film and partially reflect the incident light beam to become a reflected light beam and partially transmit the incident light beam to be a transmitted light beam. Processing device, component manufacturing system, and component manufacturing method.

1‧‧‧Component Manufacturing System

2‧‧‧Substrate supply unit

4‧‧‧Substrate recovery unit

5‧‧‧Upper control device

11‧‧‧Photomask retention mechanism

12‧‧‧Substrate support mechanism

13‧‧‧Light source device

16‧‧‧Lower control device

21‧‧‧Photomask retaining cylinder

25‧‧‧Substrate support cylinder

31‧‧‧Light source

32‧‧‧Light guiding members

41‧‧‧1/4 wavelength plate

51‧‧‧ Collimating lens

52‧‧‧Future eye lens

53‧‧‧ Concentrating lens

54‧‧‧ cylindrical lens

55‧‧‧Lighting field of view

56a~56d‧‧‧Relay lens

61‧‧‧1st Optical Department

62‧‧‧2nd Optical Department

63‧‧‧Projected field of view

64‧‧‧Focus correction optical components

65‧‧‧Optical components for offset

66‧‧‧ magnification correction optical components

67‧‧‧Rotation correction mechanism

68‧‧‧Polarization adjustment mechanism

70‧‧‧1st deflecting member

71‧‧‧1st lens group

72‧‧‧1st concave mirror

80‧‧‧2nd deflecting member

81‧‧‧2nd lens group

82‧‧‧2nd concave mirror

91‧‧‧第1稜鏡

92‧‧‧第2稜鏡

93‧‧‧ polarizing film

110‧‧‧Photomask stage (second embodiment)

P‧‧‧Substrate

FR1‧‧‧ supply reel

FR2‧‧‧Recycling roller

U1~Un‧‧‧Processing device

U3‧‧‧Exposure device (substrate processing device)

M‧‧‧Photo Mask

MA‧‧‧Photomask (Second Embodiment)

AX1‧‧‧1st axis

AX2‧‧‧2nd axis

P1‧‧‧Material cover

P2‧‧‧ bearing surface

P7‧‧‧ intermediate image

EL1‧‧‧ illumination beam

EL2‧‧‧projection beam

Rm‧‧‧ radius of curvature

Rfa‧‧‧ radius of curvature

CL‧‧‧ center face

PBS‧‧‧ polarizing beam splitter

IR1~IR6‧‧‧Lighting area

IL1~IL6‧‧‧Lighting Optics

ILM‧‧‧Lighting Optical Module

PA1~PA6‧‧‧projection area

PL1~PL6‧‧‧Projection Optics

PLM‧‧‧Projection Optical Module

BX1‧‧‧1st optical axis

BX2‧‧‧2nd optical axis

BX3‧‧‧3rd optical axis

D1‧‧‧ first side

D2‧‧‧2nd

D3‧‧‧3rd

D4‧‧‧4th

Θ‧‧‧ angle

Θ1(β)‧‧‧injection angle

θB‧‧‧ Brewster Point

S1‧‧‧ non-injection area

S2‧‧‧Injection area

H‧‧‧ layer

H1‧‧‧1st film body

H2‧‧‧2nd membrane body

Fig. 1 is a view showing the configuration of a component manufacturing system of the first embodiment.

Fig. 2 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.

Fig. 3 is a view showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 2.

4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.

Figure 5A is a diagram showing the illumination beam and the projected beam of the reticle.

Fig. 5B is a view showing a fourth relay lens viewed from a polarizing beam splitter.

Fig. 6 is a view showing an illumination beam and a projection beam of the polarization beam splitter.

Fig. 7 is a view showing a configuration area in which an illumination optical system can be arranged.

Fig. 8 is a view showing the configuration around the polarizing film of the polarization beam splitter of the first embodiment.

Fig. 9 is a view showing the configuration around the polarizing film of the polarization beam splitter of the comparative example of the first embodiment.

Fig. 10 is a graph showing the transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig. 8.

Fig. 11 is a graph showing the transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig. 9.

Fig. 12 is a flow chart showing the method of manufacturing the device of the first embodiment.

Fig. 13 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a second embodiment.

Fig. 14 is a view showing the configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment.

Fig. 15 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment.

Fig. 16 is a view showing the configuration of an exposure apparatus (substrate processing apparatus) according to a fifth embodiment.

Fig. 17 is a view showing the configuration around the polarizing film of the polarization beam splitter of the sixth embodiment.

Fig. 18 is a graph showing the transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig. 17.

Fig. 19 is a view showing the configuration around the polarizing film of the polarization beam splitter of the seventh embodiment.

Fig. 20 is a graph showing the transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig. 19.

Fig. 21 is a view showing the configuration around the polarizing film of the polarization beam splitter of the eighth embodiment.

Fig. 22 is a graph showing the transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig. 21.

The embodiment (embodiment) for carrying out the invention will be described in detail with reference to the drawings. The contents described in the following embodiments are not intended to limit the present invention. Further, the constituent elements described below include those that can be easily considered by those having ordinary knowledge in the technical field to which the invention pertains, and substantially the same. Further, the constituent elements described below can be combined as appropriate. Further, various omissions, substitutions, and changes of the components may be made without departing from the scope of the invention.

[First Embodiment]

The polarizing beam splitter of the first embodiment is provided as an exposure apparatus as a substrate processing apparatus that applies exposure processing to a photosensitive substrate that is a projection. Further, the exposure device is assembled in a component manufacturing system in which various processes are applied to the exposed substrate to manufacture an element. First, the component manufacturing system will be described.

<Component Manufacturing System>

Fig. 1 is a view showing the configuration of a component manufacturing system of a first embodiment. The component manufacturing system 1 shown in Fig. 1 is a production line (flexible display line) for manufacturing a flexible display as a component. As the flexible display, for example, an organic EL display or the like is available. In the component manufacturing system 1, the substrate P is fed from a supply roller FR1 in which a flexible substrate P is wound into a reel shape, and various processes are continuously applied to the fed substrate P, and the processed substrate P is made flexible. Sexual component coiling The recycling roller FR2 is a so-called roll to roll method. In the component manufacturing system 1 of the first embodiment, the substrate P which is a film-like sheet is fed from the supply roller FR1, and the substrate P sent from the supply roller FR1 sequentially passes through the n processing apparatuses U1, U2, U3, and U4. U5, ...Un until the example of being taken up by the recycling roller FR2. First, the substrate P to be processed by the component manufacturing system 1 will be described.

The substrate P is, for example, a resin film, a foil (f0i1) made of a metal or an alloy such as stainless steel, or the like. The material of the resin film includes, for example, a polyethylene resin, a polypropylene resin, a polyester resin, a vinyl vinyl ester copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, a polycarbonate resin, One or more of a polystyrene resin and a vinyl acetate resin.

It is preferable that the substrate P is selected such that the amount of deformation due to the heat received in the various processing steps applied to the substrate P is substantially negligible, and the coefficient of thermal expansion is not significantly increased. The coefficient of thermal expansion can also be set to be smaller than a threshold corresponding to a process temperature or the like by, for example, mixing an inorganic filler to the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, cerium oxide or the like. In addition, the substrate P may be a single layer body of an extremely thin glass having a thickness of about 100 μm which is produced by a floating method or the like, or a laminate of the above resin film, foil or the like may be bonded to the ultrathin glass.

The substrate P configured as described above is wound into a reel shape to be a supply roller FR1, and the supply roller FR1 is attached to the component manufacturing system 1. The component manufacturing system 1 to which the supply roller FR1 is attached is configured to repeatedly perform various processes for manufacturing the component on the substrate P sent from the supply roller FR1. Therefore, the processed substrate P is in a state in which a plurality of elements are connected. In other words, the substrate P sent from the supply roller FR1 is a substrate for multi-faceted. In addition, the substrate P is also It is possible to obtain a fine partition structure (concave-convex structure) which is obtained by modifying the surface by a specific pretreatment to obtain an activation, or to form a fine partition wall structure which is useful for precise patterning on the surface.

The substrate P after the treatment is collected in a reel shape and recovered as the recovery roller FR2. The collecting roller FR2 is attached to a cutting device (not shown). The cutting device to which the recovery roller FR2 is attached divides (cuts) the processed substrate P into individual elements, and creates a plurality of elements. The dimension of the substrate P is, for example, about 10 cm to 2 m in the width direction (the Y-axis direction which is the short side), and the dimension in the longitudinal direction (the X-axis direction in the long side) is 10 m or more. Further, the size of the substrate P is not limited to the above-described size.

Referring to Fig. 1, the description of the component manufacturing system will be continued. In Fig. 1, an orthogonal coordinate system orthogonal to the X direction, the Y direction, and the Z direction is shown. The X direction is a direction in which the supply roller FR1 and the recovery roller FR2 are connected in the horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane. The Y direction is the axial direction of the supply roller FR1 and the recovery roller FR2. The Z direction is a direction orthogonal to the X direction and the Y direction (vertical direction).

The component manufacturing system 1 includes a substrate supply device 2 that supplies the substrate P, a processing device U1 to Un that applies various processes to the substrate P supplied by the substrate supply device 2, and a substrate P that has been subjected to processing by the processing device U1 to Un. The substrate recovery device 4 and the device upper control device 5 of the control element manufacturing system 1.

The supply roller FR1 is rotatably mounted to the substrate supply device 2. The substrate supply device 2 has a drive roller R1 that feeds the substrate P from the mounted supply roller FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller R1 rotates while sandwiching the front and back surfaces of the substrate P, and feeds the substrate P to the conveying direction from the supply roller FR1 to the collecting roller FR2, thereby supplying the substrate P to the processing devices U1 to Un. At this time, the edge position The controller EPC1 moves the substrate P in the width direction to correct the position of the substrate P in the width direction so that the position of the end portion (edge) of the substrate P in the width direction is ±10 μm to several tens μm relative to the target position. The scope.

The recovery roller FR2 is rotatably mounted to the substrate recovery device 4. The substrate recovery device 4 has a drive roller R2 that pulls the processed substrate P to the collection roller FR2 side, and an edge position controller EPC2 that adjusts the position of the substrate P in the width direction (Y direction). The substrate recovery device 4 rotates while sandwiching the front and back surfaces of the substrate P by the driving roller R2, pulls the substrate P to the conveyance direction, and rotates the recovery roller FR2, thereby winding up the substrate P. At this time, the edge position controller EPC2 is configured similarly to the edge position controller EPC1, and the position of the substrate P in the width direction is corrected so that the end portion (edge) in the width direction of the substrate P has no unevenness in the width direction.

The processing device U1 is a coating device that applies a photosensitive functional liquid onto the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid, a photoresist, a photosensitive decane coupling material, a UV (ultraviolet) curing resin liquid, or the like is used. The processing apparatus U1 is provided with the application mechanism Gp1 and the drying mechanism Gp2 in this order from the upstream side in the conveyance direction of the board|substrate P. The coating mechanism Gp1 has a platen roller DR1 that winds the substrate P and a coating roller DR2 that faces the platen roller DR1. In the coating mechanism Gp1, the substrate P is sandwiched by the platen roller DR1 and the application roller DR2 while the substrate P to be supplied is wound around the platen roller DR1. Then, the application mechanism Gp1 rotates the platen roller DR1 and the application roller DR2 to apply the photosensitive functional liquid by the application roller DR2 while moving the substrate P in the conveyance direction. The drying mechanism Gp2 blows drying air such as hot air or dry air, removes the solute (solvent or water) contained in the photosensitive functional liquid, and forms the substrate P coated with the photosensitive functional liquid to form a substrate P. Photosensitive functional layer.

The processing device U2 heats the substrate P transferred from the processing device U1 to both A heating device that stabilizes the photosensitive functional layer formed on the surface of the substrate P at a constant temperature (for example, about several tens of ° C to about 120 ° C). The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the transport direction of the substrate P. The heating chamber HA1 has a plurality of rollers and a plurality of air-turn bars therein, and the plurality of rollers and the plurality of air steering bars constitute a transport path of the substrate P. A plurality of rollers are rolled on the back surface of the substrate P, and a plurality of air steering bars are provided on the surface side of the substrate P in a non-contact state. The plurality of rollers and the plurality of air steering bars are disposed in a serpentine transport path in order to increase the transport path of the substrate P. The substrate P in the heating chamber HA1 is heated to a predetermined temperature while being conveyed along the meandering conveyance path, and the cooling chamber HA2 is used to heat the substrate P heated in the heating chamber HA1 and the post process (processing device) The ambient temperature of U3) is uniform, and the substrate P is cooled to the ambient temperature. The cooling chamber HA2 is provided with a plurality of rollers therein, and the plurality of rollers are arranged in a serpentine transport path in order to increase the transport path of the substrate P in the same manner as the heating chamber HA1. The substrate P passing through the cooling chamber HA2 is cooled while being conveyed along the meandering conveyance path. The drive roller R3 is provided on the downstream side in the conveyance direction of the cooling chamber HA2, and the drive roller R3 is rotated while rotating the substrate P passing through the cooling chamber HA2, and the substrate P is supplied to the processing apparatus U3.

The processing apparatus (substrate processing apparatus) U3 is a scanning type exposure apparatus that projects a pattern (such as a circuit or a wiring for an exposure display) on a substrate (photosensitive substrate) P on which a photosensitive functional layer is formed from the processing apparatus U2. Although it will be described later in detail, the processing device U3 illuminates the illumination lens beam on the reflective cylindrical mask M, and projects the illumination beam by the projection beam reflected by the mask M onto the substrate support cylinder 25 that can be rotated. The substrate P supported by the outer peripheral surface. The processing device U3 has a drive roller R4 that feeds the substrate P supplied from the processing device U2 to the downstream side in the transport direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). Drive roller R4 rotates while sandwiching the front and back sides of the substrate P, and feeds the substrate P to the downstream side in the conveyance direction, thereby supplying the substrate P to the exposure position. The edge position controller EPC3 is configured similarly to the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position.

Further, the processing apparatus U3 has two sets of driving rollers R5 and R6 that transport the substrate P to the downstream side in the transport direction with the slack in the exposed substrate P. The driving rollers R5 and R6 of the two groups are disposed at a predetermined interval in the conveying direction of the substrate P. The driving roller R5 is rotated by sandwiching the upstream side of the substrate P to be conveyed, and the driving roller R6 is rotated by sandwiching the downstream side of the substrate P to be conveyed, whereby the substrate P is supplied to the processing apparatus U4. At this time, since the substrate P is provided with a slack, it is possible to absorb the fluctuation of the conveyance speed which is generated on the downstream side in the conveyance direction of the drive roller R6, and it is possible to eliminate the influence of the conveyance speed variation on the exposure processing of the substrate P. Further, in the processing apparatus U3, in order to align (align) a part of the mask pattern of the mask M with respect to the substrate P, an alignment microscope AM1 for detecting an alignment mark or the like formed in advance on the substrate P is provided. , AM2.

The processing apparatus U4 is a wet processing apparatus which performs wet development processing, electroless plating processing, and the like on the exposed substrate P transferred from the processing apparatus U3. The processing apparatus U4 has a plurality of processing tanks BT1, BT2, BT3 which are layered in the vertical direction (Z direction) and a plurality of rollers for transporting the substrate P therein. The plurality of rollers are arranged such that the substrate P sequentially passes through the transport paths inside the three processing tanks BT1, BT2, BT3. The drive roller R7 is provided on the downstream side in the transport direction of the processing tank BT3, and the drive roller R7 is rotated while rotating the substrate P passing through the processing tank BT3, and the substrate P is supplied to the processing apparatus U5.

Although not shown in the drawings, the processing device U5 is a drying device that dries the substrate P transported from the processing device U4. The processing device U5 will be attached to the processing device U4 The moisture content of the substrate P subjected to the wet treatment is adjusted to a predetermined moisture content. The substrate P dried by the processing device U5 is transferred to the processing device Un through a plurality of processing devices. Next, after the processing apparatus Un is processed, the substrate P is wound up by the collecting roller FR2 of the substrate collecting device 4.

The upper control device 5 systematically controls the substrate supply device 2, the substrate recovery device 4, and a plurality of processing devices U1 to Un. The upper control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to transport the substrate P from the substrate supply device 2 to the substrate recovery device 4. Further, the upper control device 5 controls a plurality of processing devices U1 to Un in synchronization with the transfer of the substrate P to perform various processes on the substrate P.

<Exposure device (substrate processing device)>

Next, the configuration of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to Figs. 2 to 7 . Fig. 2 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. Fig. 3 is a view showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 2. 4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2. Figure 5A is a diagram showing the illumination beam and the projected beam of the reticle. Fig. 5B is a view showing a fourth relay lens viewed from a polarizing beam splitter. Fig. 6 is a view showing an illumination beam and a projection beam of the polarization beam splitter. Fig. 7 is a view showing a configuration area in which an illumination optical system can be arranged.

The exposure apparatus U3 shown in FIG. 2 is a scanning exposure apparatus, and the image of the mask pattern formed on the outer peripheral surface of the cylindrical mask M is projected and exposed to the substrate while the substrate P is conveyed in the conveyance direction (scanning direction). The surface of P. In addition, in FIG. 2 and FIG. 4 to FIG. 7, the orthogonal coordinate system orthogonal to the X direction, the Y direction, and the Z direction is the same orthogonal coordinate system as FIG.

First, the mask M used in the exposure device U3 will be described. The mask M is a reflective cylindrical mask using, for example, a metal cylindrical body. The mask M is formed to have an outer peripheral surface (circumferential surface) The cylindrical body has a curvature radius Rm centering on the first axis AX1 extending in the Y direction and has a constant thickness in the radial direction. The circumferential surface of the mask M is a mask surface P1 on which a predetermined mask pattern is formed. The mask surface P1 includes a high reflection portion that reflects the light beam in a predetermined direction with high efficiency, and a reflection suppression portion (or a light absorption portion) that does not reflect the light beam in a predetermined direction or is reflected with low efficiency. The mask pattern is provided by the high reflection portion and The reflection suppressing portion is formed. Since the mask M is made of a metal cylindrical body, it can be produced at low cost.

Further, the mask M may be formed with a whole or a part of a pattern for a panel corresponding to one display element, or may be formed of a multi-faceted type of a pattern for a panel corresponding to a plurality of display elements. Further, in the mask M, a plurality of pattern patterns for the panel may be formed in a circumferential direction around the first axis AX1, or a plurality of small panel patterns may be formed in a direction parallel to the first axis AX1. Further, the mask M may have a panel pattern in which the pattern and the size of the panel of the first display element are different from those of the second display element of the first display element. In addition, the mask M is not limited to the shape of the cylindrical body as long as it has a circumferential surface having a radius of curvature Rm around the first axis AX1. For example, the mask M may be a circular arc-shaped plate having a circumferential surface. Further, the mask M may be in the form of a thin plate, and the thin mask-shaped mask M is bent and attached to a cylindrical base material or a cylindrical frame in a circumferential surface.

Next, the exposure device U3 shown in Fig. 2 will be described. The exposure device U3 includes the above-described driving rollers R4 to R6, the edge position controller EPC3, and the alignment microscopes AM1 and AM2, and further includes a mask holding mechanism 11, a substrate supporting mechanism 12, an illumination optical system IL, and a projection optical system PL. And a lower control device 16. The exposure device U3 guides the illumination light beam EL1 emitted from the light source device 13 to the illumination optical system IL and the projection optical system PL, and projects the image of the mask pattern of the mask M held by the mask holding mechanism 11 to The substrate P supported by the substrate supporting mechanism 12.

The lower control device 16 controls the respective units of the exposure device U3 so that the respective units perform processing. The lower control device 16 may also be part or all of the upper control device 5 of the component manufacturing system 1. Further, the lower control device 16 may be controlled by the higher-level control device 5 and be different from the higher-level control device 5. The lower control device 16 includes, for example, a computer.

The mask holding mechanism 11 has a mask holding cylinder (mask holding member) 21 that holds the mask M, and a first driving portion 22 that rotates the mask holding cylinder 21. The mask holding cylinder 21 holds the mask M so that the first axis AX1 of the mask M is the center of rotation. The first drive unit 22 is connected to the lower control device 16 and rotates the mask holding cylinder 21 with the first axis AX1 as a center of rotation.

Further, although the mask holding mechanism 11 holds the mask M of the cylindrical body by the mask holding cylinder 21, the present invention is not limited to this configuration. The mask holding mechanism 11 can also wind and hold the thin mask-shaped mask M along the outer peripheral surface of the mask holding cylinder 21. Further, the mask holding mechanism 11 may be provided with a mask M for holding an arc-shaped plate on the outer peripheral surface of the mask holding cylinder 21.

The substrate supporting mechanism 12 includes a substrate supporting cylinder (substrate supporting member) 25 that supports the substrate P, a second driving portion 26 that rotates the substrate supporting cylinder 25, a pair of air turn bars ATB1, ATB2, and A pair of guide rollers 27, 28. The substrate supporting cylinder 25 is formed in a cylindrical shape having a radius of curvature centered on the second axis AX2 extending in the Y direction and having a peripheral surface (circumferential surface) other than Rfa. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the surface passing through the first axis AX1 and the second axis AX2 is the center plane CL. One of the circumferential faces of the substrate supporting cylinder 25 is a supporting surface P2 of the supporting substrate P. That is, the substrate supporting cylinder 25 supports the substrate P by winding the substrate P around its supporting surface P2. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support cylinder 25 with the second axis AX2 as a center of rotation. The pair of air flip levers ATB1 and ATB2 are respectively disposed upstream of the transport direction of the substrate P via the substrate supporting cylinder 25 Side and downstream side. The pair of air flip levers ATB1 and ATB2 are provided on the surface side of the substrate P, and are provided on the lower side in the vertical direction (Z direction) than the support surface P2 of the substrate support cylinder 25. The pair of guide rollers 27 and 28 are respectively disposed on the upstream side and the downstream side in the transport direction of the substrate P via the pair of air flip levers ATB1 and ATB2. The pair of guide rolls 27 and 28, wherein one of the guide rolls 27 guides the substrate P transported from the drive roll R4 to the air flip lever ATB1, and the other guide roller 28 transports the substrate from the air flip lever ATB2. P is guided to the driving roller R5.

As described above, the substrate supporting mechanism 12 guides the substrate P conveyed from the driving roller R4 to the air turning lever ATB1 by the guide roller 27, and introduces the substrate P passing through the air turning lever ATB1 into the substrate supporting cylinder 25. In the substrate supporting mechanism 12, the substrate supporting cylinder 25 is rotated by the second driving unit 26, and the substrate P introduced into the substrate supporting cylinder 25 is supported by the supporting surface P2 of the substrate supporting cylinder 25 while being conveyed to the air. Rod ATB2. The substrate supporting mechanism 12 guides the substrate P conveyed to the air turning lever ATB2 to the guide roller 28 by the air turning lever ATB2, and guides the substrate P passing through the guide roller 28 to the driving roller R5.

At this time, the first drive unit 22 and the second drive unit 26 are connected to the lower control device 16, and the mask holding cylinder 21 and the substrate support cylinder 25 are synchronously rotated at a predetermined rotational speed ratio, and are formed in the mask M. The image of the mask pattern of the mask surface P1 is continuously projected and exposed on the surface of the substrate P wound around the support surface P2 of the substrate supporting cylinder 25 (the surface curved along the circumferential surface).

The light source device 13 emits an illumination light beam EL1 that is illuminated by the mask M. The light source device 13 has a light source 31 and a light guiding member 32. The light source 31 emits light of a predetermined wavelength that imparts an optical effect to the photo-sensing layer formed on the surface of the substrate P. The light source 31 can use a light source such as a mercury lamp, a laser diode, a light emitting diode (LED), or the like. The illumination light emitted from the light source 31 is, for example, a bright line (g line, h line, i line, etc.) emitted from a light source, and KrF excimer laser light (wavelength 248 nm). Equivalent ultraviolet light (DUV light), ArF excimer laser light (wavelength 193 nm), and the like. Here, the light source 31 preferably emits a wavelength illumination beam EL1 including an i-line (wavelength of 365 nm) or less. As the light source 31 that generates the illumination light beam EL1 having a wavelength below the i-line, a YAG third harmonic laser that emits laser light having a wavelength of 355 nm, a YAG fourth harmonic laser that emits laser light having a wavelength of 266 nm, or an emission wavelength can be used. KrF excimer laser of 248 nm laser light, etc.

Here, the illumination light beam EL1 emitted from the light source device 13 is incident on a polarization beam splitter PBS, which will be described later. In order to suppress the energy loss caused by the separation of the illumination beam EL1 by the polarization beam splitter PBS, the illumination beam EL1 is preferably a beam which is substantially totally reflected by the incident illumination beam EL1 in the polarization beam splitter PBS. The polarizing beam splitter PBS can reflect a linearly polarized light beam that is S-polarized light, and transmits a linearly polarized light beam that is P-polarized. Therefore, the light source device 13 emits the illumination light beam EL1 that is incident on the beam of the polarization beam splitter (S-polarized light) by the illumination light beam EL1 that has entered the polarization beam splitter PBS. Therefore, the light source device 13 emits polarized laser light having a uniform wavelength and phase with respect to the polarization beam splitter PBS.

The light guiding member 32 leads the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guiding member 32 is configured by a relay module or the like using an optical fiber or a mirror. Further, when a plurality of illumination optical systems IL are provided, the light guide member 32 separates the illumination light beams EL1 from the light source 31 into a plurality of stripes, and then directs the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. Further, in the case where the light beam emitted from the light source 31 is polarized laser light, for example, a polarization maintaining fiber (Polarization Maintaining Fiber) can be used as the optical fiber, and the polarization maintaining fiber can be guided while maintaining the polarization of the laser light. Light.

Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment is a so-called multi-lens type exposure apparatus. Also, in Figure 3, the side from the -Z is shown A plan view (left view of FIG. 3) of the illumination region IR on the mask M held by the mask holding cylinder 21, and a projection area PA on the substrate P supported by the substrate support cylinder 25 are observed from the +Z side. Top view (right of Figure 3). The symbol Xs of Fig. 3 represents the moving direction (rotational direction) of the mask holding cylinder 21 and the substrate supporting cylinder 25. In the multi-lens type exposure device U3, a plurality of (in the first embodiment, for example, six) illumination regions IR1 to IR6 illuminate the illumination light beam EL1, and each illumination light beam EL1 is in each illumination region IR1. The plurality of projection light beams EL2 obtained by the reflection of the IR6 are projected onto the substrate P by a plurality of (for example, six in the first embodiment) projection areas PA1 to PA6.

First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in FIG. 3, a plurality of illumination regions IR1 to IR6 are arranged in two rows in the rotation direction via the center plane CL, and an odd-numbered first illumination region IR1 and a third illumination are disposed on the mask M on the upstream side in the rotation direction. In the region IR3 and the fifth illumination region IR5, the even-numbered second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are disposed on the mask M on the downstream side in the rotational direction. Each of the illumination regions IR1 to IR6 has an elongated trapezoidal (rectangular) region extending in parallel with the short side and the long side in the axial direction (Y direction) of the mask M. At this time, each of the illumination regions IR1 to IR6 of the trapezoid is formed in a region whose short side is on the side of the center plane CL and whose long side is located outside. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at a predetermined interval in the axial direction. Further, the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are also arranged at a predetermined interval in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Similarly, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. Fifth lighting area IR5 is disposed between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. Each of the illumination regions IR1 to IR6 is disposed such that the triangular portion of the oblique portion of the adjacent trapezoidal illumination region overlaps as viewed from the circumferential direction of the mask M. Further, in the first embodiment, each of the illumination regions IR1 to IR6 is formed as a trapezoidal region, but may be formed as a rectangular region.

Further, the mask M has a pattern forming region A3 in which a mask pattern is formed, and a pattern non-forming region A4 in which a mask pattern is not formed. The pattern non-formation region A4 absorbs the non-reflective region of the illumination light beam EL1, and is disposed to surround the pattern formation region A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged to cover the full width in the Y direction of the pattern formation region A3.

The illumination optical system IL is provided in a plurality of illumination regions IR1 to IR6 (for example, six in the first embodiment). The illumination light beams EL1 from the light source device 13 are respectively incident on the plurality of illumination optical systems IL1 to IL6. Each of the illumination optical systems IL1 to IL6 leads each illumination light beam EL1 incident from the light source device 13 to each of the illumination regions IR1 to IR6. In other words, the first illumination optical system IL1 leads the illumination light beam EL1 to the first illumination region IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination light beam EL1 to the second to sixth illumination regions IR2. ~IR6. A plurality of illumination optical systems IL1 to IL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. The plurality of illumination optical systems IL1 to IL6 are disposed on the side of the first, third, and fifth illumination regions IR1, IR3, and IR5 (on the left side in FIG. 2) via the center plane CL, and the first illumination optical system IL1 and the third are disposed. The illumination optical system IL3 and the fifth illumination optical system IL5. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. Further, the plurality of illumination optical systems IL1 to IL6 are disposed on the side of the second, fourth, and sixth illumination regions IR2, IR4, and IR6 (on the right side in FIG. 2) via the center plane CL, and the second illumination optical system IL2 is disposed. The fourth illumination optical system IL4 and the sixth illumination optical system IL6. Second illumination optical system IL2, fourth illumination optics The IL4 and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3 is disposed between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction. The fourth illumination optical system IL4 is disposed between the third illumination optical system IL3 and the fifth illumination optical system IL5 in the axial direction. The fifth illumination optical system IL5 is disposed between the fourth illumination optical system IL4 and the sixth illumination optical system IL6 in the axial direction. Further, the first illumination optical system IL1, the third illumination optical system IL3, the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are viewed from the Y direction. It is symmetrically arranged with the center plane CL as the center.

Next, each of the illumination optical systems IL1 to IL6 will be described with reference to Fig. 4 . In addition, since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter simply referred to as the illumination optical system IL) will be described as an example.

In the illumination optical system IL, the illumination beam EL1 for illuminating the illumination region IR (first illumination region IR1) has a uniform illuminance distribution, and the Kohler illumination method is applied. Further, the illumination optical system IL sequentially includes an illumination optical module ILM, a polarization beam splitter PBS, and a quarter-wave plate 41 from the incident side of the illumination light beam EL1 from the light source device 13.

As shown in FIG. 4, the illumination optical module ILM includes a collimating lens 51, a fly-eye lens 52, a plurality of collecting lenses 53, a cylindrical lens 54, and an illumination field of view from the incident side of the illumination beam EL1. 55 and a plurality of relay lenses 56 are provided on the first optical axis BX1. The collimator lens 51 is provided on the emission side of the light guiding member 32 of the light source device 13. The optical axis of the collimator lens 51 is disposed on the first optical axis BX. The collimator lens 51 illuminates the entirety of the incident side of the fly-eye lens 52. The fly-eye lens 52 is provided on the emission side of the collimator lens 51. Center configuration of the exit side of the fly-eye lens 52 On the first optical axis BX1. The fly-eye lens 52 divides the illumination light beam EL1 from the collimator lens 51 into light beams that are diverged from each of the plurality of point light source images. At this time, the surface on the emission side of the fly-eye lens 52 of the point light source image is generated, and the first concave mirror is disposed by the various lenses of the first concave mirror 72 of the projection optical system PL which is transmitted from the fly-eye lens 52 through the illumination field stop 55 to the later-described projection optical system PL. The pupil plane of the reflecting surface of 72 is optically conjugated.

The condensing lens 53 is provided on the emission side of the fly-eye lens 52. The optical axis of the condensing lens 53 is disposed on the first optical axis BX1. The condensing lens 53 superimposes each of the illumination beams split by the fly-eye lens 52 through the cylindrical lens 54 and overlaps the illumination field stop 55. Thereby, the illumination light beam EL1 becomes a uniform illuminance distribution on the illumination field stop 55. The cylindrical lens 54 is a plano-convex cylindrical lens in which the incident side is a flat surface and the emitting side is a convex surface. The cylindrical lens 54 is provided on the emission side of the condensing lens 53. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1.

The cylindrical lens 54 converges the chief ray of the illumination light beam EL1 in the direction orthogonal to the first optical axis BX1 in the XZ plane in Fig. 4 . The cylindrical lens 54 is disposed adjacent to the emission side of the illumination field stop 55. The opening of the illumination field stop 55 is formed in a trapezoidal or rectangular shape having the same shape as the illumination area IR, and the center of the opening of the illumination field stop 55 is disposed on the first optical axis BX1. At this time, the illumination field stop 55 is disposed on the surface optically conjugate with the illumination region IR on the mask M by the various lenses from the illumination field stop 55 to the mask M. The relay lens 56 is provided on the emission side of the illumination field stop 55. The optical axis of the relay lens 56 is disposed on the first optical axis BX1. The relay lens 56 causes the illumination light beam EL1 from the illumination field stop 55 to enter the polarization beam splitter PBS.

When the illumination light beam EL1 is incident on the illumination optical module ILM, the illumination light beam EL1 becomes a comprehensive light beam that is incident on the incident side of the fly-eye lens 52 by the collimator lens 51. The illumination light beam EL1 incident on the fly-eye lens 52 becomes an illumination light beam EL1 that is divided into a plurality of point light source images, and is transmitted through The condenser lens 53 is incident on the cylindrical lens 54. The illumination light beam EL1 incident on the cylindrical lens 54 converges in the XZ plane in a direction orthogonal to the first optical axis BX1. The illumination light beam EL1 passing through the cylindrical lens 54 is incident on the illumination field stop 55. The illumination light beam EL1 that has entered the illumination field stop 55 is incident on the polarization beam splitter PBS through the relay lens 56 by illuminating the opening of the field stop 55 (a rectangle such as a trapezoid or a rectangle).

The polarization beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL. The polarizing beam splitter PBS reflects the illumination light beam EL1 from the illumination optical module ILM, and transmits the projection light beam EL2 reflected by the mask M. That is, by causing the illumination light beam EL1 from the illumination optical module ILM to be linearly polarized as S-polarized light, the projection light beam EL2 incident on the polarization beam splitter PBS becomes P-polarized by the action of the quarter-wavelength plate 41. Linearly polarized and transmitted to the polarizing beam splitter PBS.

Further, although the detailed configuration of the polarization beam splitter PBS will be described later, as shown in FIG. 6, the polarization beam splitter PBS has the first 稜鏡91, the second 稜鏡92, and the first 稜鏡91 and the A polarizing film (wavefront dividing surface) 93 between 2 and 92. The first 稜鏡91 and the second 稜鏡92 are made of quartz glass, and are triangular triangles in the XZ plane. The polarizing beam splitter PBS is joined by the polarizing film 93 between the first 稜鏡91 and the second 稜鏡92 of the triangle, and has a square shape in the XZ plane.

The first 稜鏡91 is the 射 of the illumination beam EL1 and the projection beam EL2 on the incident side. The second 稜鏡 92 is the 射 of the emission side of the projection light beam EL2 of the transmission polarizing film 93. In the polarizing film 93, the illumination light beam EL1 from the first side 91 toward the second side 92 is incident. The polarizing film 93 reflects the S-polarized (linearly polarized) illumination light beam EL1 and transmits the P-polarized (linearly polarized) projection light beam EL2.

The polarizing beam splitter PBS reflects most of the illumination light beam EL1 reaching the polarizing film (wavefront dividing surface) 93, and preferably transmits most of the projection light beam EL2. The polarization separation characteristic of the wavefront splitting surface of the polarizing beam splitter PBS is represented by the extinction ratio, but since the extinction ratio also changes due to the incident angle of the light incident on the wavefront dividing surface, the characteristics of the wavefront dividing surface are also It is not a problem to design the effect on the practical imaging performance after considering the NA (numerical aperture) of the illumination beam EL1 or the projection beam EL2.

The 1⁄4 wavelength plate 41 is disposed between the polarization beam splitter PBS and the photomask M. The 1⁄4 wavelength plate 41 converts the illumination light beam EL1 reflected by the polarization beam splitter PBS from linearly polarized light (S-polarized light) to circularly polarized light. The light reflected by the reticle M by the illumination of the circularly polarized illumination beam EL1 (circularly polarized light) is converted into a P-polarized (linearly polarized) projection light beam EL2 by the 1/4 wavelength plate 41.

5A is a diagram in which the state of the illumination light beam EL1 of the illumination region IR irradiated on the mask M and the projection light beam EL2 reflected by the illumination region IR are exaggerated in the XZ plane (the plane perpendicular to the first axis AX1). As shown in FIG. 5A, the illumination optical system IL is configured to illuminate the illumination region IR of the reticle M such that the chief ray of the projection light beam EL2 reflected by the illumination region IR of the reticle M is telecentric (parallel). The chief ray of the light beam EL1 is intended to be in a non-telecentric state on the XZ plane (the plane perpendicular to the first axis AX1), and is in the telecentric state on the YZ plane (parallel to the center plane CL). The above characteristics of the illumination light beam EL1 are imparted by the cylindrical lens 54 shown in FIG. Specifically, when the intersection Q2 of the circle passing through the point Q1 of the center of the illumination region IR in the circumferential direction of the illumination region IR on the mask surface P1 toward the first axis AX1 and the radius Rm of the mask surface P1 is set, The curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set such that the principal rays of the illumination light beam EL1 passing through the illumination region IR are directed toward the intersection Q2 on the XZ plane. In this way, the principal rays of the projection beam EL2 reflected in the illumination region IR become and pass through the first axis in the XZ plane. The state of AX1, point Q1, and intersection Q2 is parallel (telecentric).

Next, a plurality of projection areas PA1 to PA6 projected by the projection optical system PL will be described. As shown in FIG. 3, a plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to a plurality of illumination areas IR1 to IR6 on the mask M. In other words, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in two rows in the transport direction via the center plane CL, and the first projection area PA1 and the third projection of the odd number are arranged on the substrate P on the upstream side in the transport direction. In the area PA3 and the fifth projection area PA5, the even-numbered second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are disposed on the substrate P on the downstream side in the transport direction. Each of the projection areas PA1 to PA6 has an elongated trapezoidal (rectangular) region extending in the width direction (Y direction) of the substrate P in the width direction (long direction). At this time, each of the projection regions PA1 to PA6 of the trapezoid is a region in which the short side is located on the center plane CL side and the long side thereof is located outside. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at a predetermined interval in the width direction. Further, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are also arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is disposed between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is disposed between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is disposed between the third projection area PA3 and the fifth projection area PA5. The fifth projection area PA5 is disposed between the fourth projection area PA4 and the sixth projection area PA6. Similarly to each of the illumination areas IR1 to IR6, each of the projection areas PA1 to PA6 is disposed such that the triangular portion of the oblique portion of the adjacent trapezoidal projection area PA overlaps as viewed from the direction in which the substrate P is transported. At this time, the projection area PA is substantially the same shape as the exposure amount in the overlap region of the adjacent projection area PA and the exposure amount in the non-overlapping region. The first to sixth projection areas PA1 to PA6 are configured to cover the exposure area A7 exposed on the substrate P. The Y direction is full width.

Here, in FIG. 2, when viewed in the XZ plane, the circumference from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the illumination area IR2 (and IR4, IR6) is set to The circumference of the center point of the projection areas PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) is substantially equal.

The projection optical system PL has a plurality of projection areas PA1 to PA6 (for example, six in the first embodiment). The plurality of projection light beams EL2 reflected from the plurality of illumination regions IR1 to IR6 are incident on the plurality of projection optical systems PL1 to PL6. Each of the projection optical systems PL1 to PL6 guides each of the projection light beams EL2 reflected by the mask M to each of the projection areas PA1 to PA6. In other words, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination region IR1 to the first projection region PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 are from the second to the sixth. Each of the projection light beams EL2 of the illumination areas IR2 to IR6 is guided to the second to sixth projection areas PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. The plurality of projection optical systems PL1 to PL6 sandwich the center plane CL, and the first projection optical system PL1 and the third projection are disposed on the side (the left side in FIG. 2) on which the first, third, and fifth projection regions PA1, PA3, and PA5 are disposed. The optical system PL3 and the fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. Further, a plurality of illumination optical systems IL1 to IL6 sandwich the center plane CL, and the second projection optical system PL2 is disposed on the side (the right side in FIG. 2) on which the second, fourth, and sixth projection regions PA2, PA4, and PA6 are disposed. 4 Projection optical system PL4 and sixth projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed in the first projection optical system PL1 and the third direction in the axial direction. Between the projection optical systems PL3. Similarly, the third projection optical system PL3 is disposed between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction. The fourth projection optical system PL4 is disposed between the third projection optical system PL3 and the fifth projection optical system PL5. The fifth projection optical system PL5 is disposed between the fourth projection optical system PL4 and the sixth projection optical system PL6. Further, the first projection optical system PL1, the third projection optical system PL3, the fifth projection optical system PL5, the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are viewed from the Y direction. It is symmetrically arranged with the center plane CL as the center.

Further, each of the projection optical systems PL1 to PL6 will be described with reference to Fig. 4 . In addition, since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter simply referred to as the projection optical system PL) will be described as an example.

The projection optical system PL projects an image of the mask pattern of the illumination region IR (first illumination region IR1) on the mask M onto the projection area PA on the substrate P. The projection optical system PL sequentially includes the quarter-wavelength plate 41, the polarization beam splitter PBS, and the projection optical module PLM from the incident side of the projection light beam EL2 from the mask M.

The 1⁄4 wavelength plate 41 and the polarization beam splitter PBS are used together with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share a quarter-wavelength plate 41 and a polarization beam splitter PBS.

As illustrated in FIG. 5A, the projection light beam EL2 reflected by the illumination region IR becomes a telecentric beam (a state in which the principal rays are parallel to each other) is incident on the projection optical system PL. The projection light beam EL2 which is reflected by the illumination region IR and which is circularly polarized is converted from circularly polarized light to linearly polarized light (P-polarized light) by the 1⁄4 wavelength plate 41, and then incident on the polarization beam splitter PBS. The projection beam EL2 incident on the polarization beam splitter PBS is incident on the projection optical module PLM after passing through the polarization beam splitter PBS.

The projection optical module PLM is corresponding to the illumination optical module ILM. In other words, the first projection optical system PL1 projects an image of the mask pattern of the first illumination region IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 onto the first projection region PA1 on the substrate P. Similarly, the second to sixth projection optical systems PL2 to PL6 are reticle patterns of the second to sixth illumination regions IR2 to IR6 that are illuminated by the illumination optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image is projected on the second to sixth projection areas PA2 to PA6 on the substrate P.

As shown in FIG. 4, the projection optical module PLM includes a first optical system 61 that images an image of a mask pattern of the illumination region IR on the intermediate image plane P7, and at least an intermediate image that is imaged by the first optical system 61. A part of the second optical system 62 that is imaged on the projection area PA of the substrate P and a projection field stop 63 that is disposed on the intermediate image plane P7 of the intermediate image. Further, the projection optical module PLM includes a focus correction optical member 64, an image shifting optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism (polarization adjustment means) 68.

The first optical system 61 and the second optical system 62 are, for example, telecentric optical refraction optical systems that deform the Dyson system. In the first optical system 61, the optical axis (hereinafter referred to as the second optical axis BX2) is substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflecting member 70 , a first lens group 71 , and a first concave mirror 72 . The first deflecting member 70 is a triangular ridge having a first reflecting surface P3 and a second reflecting surface P4. The first reflecting surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS and causes the reflected projection light beam EL2 to enter the first concave mirror 72 through the first lens group 71. The second reflecting surface P4 is a surface on which the projection light beam EL2 reflected by the first concave mirror 72 is incident on the first lens group 71 and the incident projection light beam EL2 is reflected toward the projection field stop 63. The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The first concave mirror 72 is disposed on the pupil plane of the first optical system 61, and is set to borrow A plurality of point light sources generated by the fly-eye lens 52 are optically conjugated.

The projection light beam EL2 from the polarization beam splitter PBS is reflected by the first reflection surface P3 of the first deflecting member 70, and enters the first concave mirror 72 through the field of view of the upper half of the first lens group 71. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72, and is incident on the second reflection surface P4 of the first deflecting member 70 through the field of view of the lower half of the first lens group 71. The projection light beam EL2 incident on the second reflection surface P4 is reflected by the second reflection surface P4, and is incident on the projection field stop 63 by the focus correction optical member 64 and the image shifting optical member 65.

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA.

The second optical system 62 has the same configuration as that of the first optical system 61, and is symmetrical with the first optical system 61 via the intermediate image plane P7. In the second optical system 62, the optical axis (hereinafter, referred to as the third optical axis BX3) is substantially orthogonal to the center plane CL, and is parallel to the second optical axis BX2. The second optical system 62 includes a second deflecting member 80 , a second lens group 81 , and a second concave mirror 82 . The second deflecting member 80 has a third reflecting surface P5 and a fourth reflecting surface P6. The third reflecting surface P5 reflects the projection light beam EL2 from the projection field stop 63 and causes the reflected projection light beam EL2 to enter the second concave mirror 82 through the second lens group 81. The fourth reflecting surface P6 is a surface on which the projection light beam EL2 reflected by the second concave mirror 82 is incident through the second lens group 81 and the incident projection light beam EL2 is reflected toward the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The second concave mirror 82 is disposed on the pupil plane of the second optical system 62, and is set to be optically conjugate with a plurality of point light source images formed on the first concave mirror 72.

The projection light beam EL2 from the projection field stop 63 is reflected by the third reflection surface P5 of the second deflecting member 80, and enters the second field through the field of view of the upper half of the second lens group 81. Concave mirror 82. The projection light beam EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82, and is incident on the fourth reflection surface P6 of the second deflecting member 80 through the field of view of the lower half of the second lens group 81. The projection light beam EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6, and is incident on the projection area PA by the magnification correction optical member 66. Thereby, the image of the mask pattern in the illumination area IR is projected onto the projection area PA by a factor of (×1).

The focus correction optical member 64 is disposed between the first deflecting member 70 and the projection field stop 63. The focus correction optical member 64 adjusts the focus state of the reticle pattern image projected on the substrate P. The focus correcting optical member 64 is, for example, inverted by two wedge-shaped turns (inverted in the X direction in Fig. 4) into a parallel plate which is entirely transparent. By setting the pair of turns to the direction of the slope without changing the interval between the faces facing each other, the thickness of the parallel plate can be changed. Accordingly, the effective optical path length of the first optical system 61 can be finely adjusted, and the in-focus state of the reticle pattern image formed on the intermediate image surface P7 and the projection area PA can be finely adjusted.

The image shifting optical member 65 is disposed between the first deflecting member 70 and the projection field stop 63. Like the offset optical member 65, the image of the mask pattern projected on the substrate P can be moved in the image plane. The offset optical member 65 is composed of a transparent parallel plate glass which is inclined in the XZ plane of FIG. 4 and a parallel parallel plate glass which can be inclined in the YZ plane of FIG. By adjusting the amount of tilt of the two parallel flat glass sheets, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

The magnification correction optical member 66 is disposed between the second deflecting member 80 and the substrate P. For the magnification correction optical member 66, for example, three pieces of a concave lens, a convex lens, and a concave lens are coaxially arranged at a predetermined interval, and the front and rear concave lenses are fixed, and the convex lens is movable in the optical axis (main ray) direction. According to this, the image of the mask pattern formed in the projection area PA, That is, while maintaining the imaging state of the telecentricity, the isotropic magnification is slightly enlarged or reduced. Further, the optical axes of the three lens groups constituting the magnification correcting optical member 66 are inclined in the XZ plane and are parallel to the chief ray of the projection light beam EL2.

The rotation correcting mechanism 67 rotates the first deflecting member 70 slightly around the axis parallel to the Z axis by, for example, an actuator (not shown). By rotating the first deflecting member 70, the rotation correcting mechanism 67 can slightly rotate the image of the mask pattern formed on the intermediate image plane P7 in the intermediate image plane P7.

The polarization adjusting mechanism 68 rotates the quarter-wavelength plate 41 about an axis orthogonal to the plate surface by an actuator (not shown) to adjust the polarization direction. The polarization adjusting mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the quarter-wavelength plate 41.

In the projection optical system PL configured in this manner, the projection light beam EL2 from the mask M is emitted from the illumination region IR toward the normal direction of the mask surface P1, and is incident through the quarter-wavelength plate 41 and the polarization beam splitter PBS. The first optical system 61. The projection light beam EL2 that has entered the first optical system 61 is reflected by the first reflection surface (planar mirror) P3 of the first deflection member 70 of the first optical system 61, and is reflected by the first concave mirror 72 by the first lens group 71. The projection light beam EL2 reflected by the first concave mirror 72 is again reflected by the first lens group 71 on the second reflection surface (planar mirror) P4 of the first deflection member 70, and is transmitted through the focus correction optical member 64 and the image shifting optical member 65. The projection field of view pupil 63 is incident. The projection light beam EL2 of the projection field stop 63 is reflected by the third reflection surface (planar mirror) P5 of the second deflection member 80 of the second optical system 62, and is reflected by the second concave mirror 82 by the second lens group 81. The projection light beam EL2 reflected by the second concave mirror 82 is again reflected by the second lens group 81 on the fourth reflection surface (planar mirror) P6 of the second deflection member 80, and is incident on the magnification correction optical member. 66. The projection light beam EL2 emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination region IR is projected onto the projection area PA at a magnification (×1).

In the present embodiment, the second reflecting surface (planar mirror) P4 of the first deflecting member 70 and the third reflecting surface (planar mirror) P5 of the second deflecting member 80 are inclined with respect to the center plane CL (or the optical axes BX2 and BX3). The first reflecting surface (plane mirror) P3 of the first deflecting member 70 and the fourth reflecting surface (planar mirror) P6 of the second deflecting member 80 are inclined by 45° with respect to the center plane CL (or the optical axes BX2 and BX3). Outside the angle. The angle α° (absolute value) of the first reflecting surface P3 of the first deflecting member 70 with respect to the center plane CL (or the optical axis BX2) is a point Q1, an intersection Q2, a straight line passing through the first axis AX1, and FIG. When the angle formed by the center plane CL is set to θ°, the relationship is determined as α°=45°+θ°/2. Similarly, the angle β (absolute value) of the fourth reflecting surface P6 of the second deflecting member 80 with respect to the center plane CL (or the optical axis BX2) is a projection area PA that passes through the circumferential direction of the outer peripheral surface of the substrate supporting cylinder 25. When the angle between the chief ray of the projection beam EL2 at the center point and the center plane CL in the ZX plane is set to ε°, the relationship is determined to be β°=45°+ε°/2.

<Composition of illumination optical system and projection optical system>

Further, the configuration of the illumination optical system IL and the projection optical system PL of the exposure apparatus U3 of the first embodiment will be described in detail with reference to FIGS. 4, 6, and 7.

As described above, the illumination optical system IL shown in FIG. 4 has an illumination optical module ILM, the projection optical system PL has a projection optical module PLM, and the illumination optical system IL and the projection optical system PL share a polarization beam splitter PBS and 1/4. Wavelength plate 41. The illumination optical module ILM and the polarization beam splitter PBS are disposed between the mask M and the projection optical module PLM in a direction in which the center plane CL extends (Z direction). Specifically, the polarizing beam splitter PBS is disposed in the Z direction on the mask M and the projection optical module. The first lens group 71 of the PLM is disposed between the center plane CL and the illumination optical module ILM in the X direction. Further, the illumination optical module ILM is provided between the mask M and the first lens group 71 of the projection optical module PLM in the Z direction, and is disposed on the opposite side of the center plane CL side via the polarization beam splitter PBS in the X direction. .

Here, the arrangement area E in which the illumination optical module ILM can be disposed will be described with reference to FIG. The arrangement area E in the XZ plane is an area defined by the first line L1, the second line L2, and the third line L3. The second line L2 is the chief ray of the projection beam EL2 reflected by the mask M (through, for example, the point Q1 in Fig. 5A). The first line L1 is a wiring (junction) of the mask face P1 in the intersection of the chief ray of the projection beam EL2 reflected by the mask M and the mask face P1 (for example, the point Q1 in FIG. 5A). The third line L3 is set to be parallel to the second optical axis BX2 of the first optical system 61 so as not to interfere spatially with the projection optical module PLM. The illumination optical module ILM is disposed in the arrangement area E surrounded by the first line L1, the second line L2, and the third line L3. When the mask M is a cylinder, as shown in FIG. 7, the first line L1 can be inclined such that the distance between the third line L3 and the first line L1 in the Z direction increases as it goes away from the center plane CL. . Therefore, the setting of the illumination optical module ILM becomes easy.

Further, the illumination optical module ILM may define the arrangement of the chief ray of the illumination light beam EL1 of the polarizing film 93 of the polarization beam splitter PBS from the illumination optical module ILM. As shown in FIG. 6, the angle formed by the chief ray of the projection beam EL2 reflected by the illumination area IR (for example, by the point Q1 in FIG. 5A) and the center plane CL is set to θ. At this time, the illumination optical module ILM is disposed such that the incident angle β of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 of the polarization beam splitter PBS (described as θ1 in the following description) is 45°×0.8≦. β≦(45°+θ/2)×1.2. That is, the angle range of the incident angle β is one suitable for the polarizing beam splitter PBS. The incident angle β of the polarizing film 93 allows the illumination light beam EL1 to enter, and the illumination optical module ILM can be disposed so as not to physically interfere with the mask M and the projection optical module PLM. Further, although the angle range of the above-described incident angle β is determined by considering the angular distribution determined by the numerical aperture (NA) of the illumination light beam EL1, 45° ≦ β ≦ (45° + θ/2) is preferable. Further, the most appropriate incident angle β is such that the illumination light beam EL1 is incident on the polarization beam splitter PBS in a state where the first optical axis BX1 of the illumination optical module ILM is parallel to the second optical axis BX2 of the projection optical module PLM. The incident angle of the polarizing film 93.

The polarization beam splitter PBS is composed of two triangular turns (for example, made of quartz) 91 and 92 joined by a polarizing film 93. The entrance surface of the cymbal 91 into which the illumination light beam EL1 from the illumination optical module ILM is incident is set to be perpendicular to the first optical axis BX1 of the illumination optical module ILM, and the surface on which the illumination light beam EL1 is emitted toward the reticle M is set to It is perpendicular to the chief ray of the illumination beam EL1 (for example, a line connecting the point Q1 in FIG. 5A and the rotation center axis AX1). Moreover, the exit surface of the pupil 92 that transmits the projection beam EL2 from the mask M through the aperture 91 and the polarizing film 93 to the projection optical module PLM is also set to be the chief ray of the projection beam EL2 (for example, as shown in FIG. 5A). Point Q1 is perpendicular to the line of the central axis of rotation AX1. Therefore, the polarizing beam splitter PBS is an optical parallel plate having a certain thickness with respect to the projection beam EL2 having the telecentric principal ray.

As shown in FIG. 4, since the illumination optical module ILM is physically interfered with the projection optical module PLM on the PBS side of the polarization beam splitter, the various lenses (first lens) included in the illumination optical module ILM are cut off. portion. Further, in the first embodiment, the case where the various lenses of the illumination optical module ILM are removed has been described, but the configuration is not limited thereto. That is to say, the projection optical module PLM also has physical interference with the illumination optical module ILM on the PBS side of the polarization beam splitter, so that part of the various lenses (second lens) included in the projection optical module PLM can also be cut off. . Therefore, each of the illumination optical module ILM and the projection optical module PLM can be cut off. One part of the lens. However, in general, since the illumination optical module ILM is required to have lower optical precision than the projection optical module PLM, one of the various lenses (first lens) included in the illumination illumination module ILM is simpler and more simple. ideal.

In the illumination optical module ILM, a part of the plurality of relay lenses 56 provided on the side of the polarization beam splitter PBS is cut off. The plurality of relay lenses 56 are sequentially the first relay lens 56a, the second relay lens 56b, the third relay lens 56c, and the fourth relay lens 56d from the incident side of the illumination light beam EL1. The fourth relay lens 56d is disposed adjacent to the polarization beam splitter PBS. The third relay lens 56c is provided adjacent to the fourth relay lens 56d. The second relay lens 56b is provided at a predetermined interval from the third relay lens 56c, and the second relay lens 56b and the third relay lens 56c are compared with the second relay lens 56b and the first relay lens 56a. Long between. The first relay lens 56a is provided adjacent to the second relay lens 56b. The first relay lens 56a and the second relay lens 56b on the far side from the polarization beam splitter PBS are formed in a circular shape around the optical axis. On the other hand, the third relay lens 56c and the fourth relay lens 56d which are closer to the polarization beam splitter PBS have a shape in which one part of the circular shape is cut away.

After the illumination light beam EL1 enters the third relay lens 56c and the fourth relay lens 56d, the third relay lens 56c and the fourth relay lens 56d form the incident region S2 and the illumination light beam EL1 into which the illumination light beam EL1 is incident. The non-injection area S1 that does not enter. The third relay lens 56c and the fourth relay lens 56d have a shape in which one of the non-injection regions S1 is partially broken to form a part of the circular shape. Specifically, the third relay lens 56c and the fourth relay lens 56d are formed by cutting off the plane perpendicular to the orthogonal direction on both sides orthogonal to the first optical axis BX1 in the XZ plane. shape. Therefore, the third relay lens 56c and the fourth relay lens 56d have a shape including a substantially elliptical shape, a substantially oblong shape, a substantially small shape, and the like when viewed from the first optical axis BX1.

Here, the first of the polarization beam splitters PBS closest to FIG. 4 will be described with reference to FIG. 5B. An example of the shape of the 4 relay lens 56d. In FIG. 5B, when the fourth relay lens 56d is viewed from the polarization beam splitter PBS side, the non-injection region S1 in which the illumination light beam EL1 does not pass is present in the Z direction via the incident region S2 through which the illumination light beam EL1 passes. The fourth relay lens 56d is formed by cutting a portion corresponding to the non-injection region S1 after being manufactured as a circular lens having a predetermined diameter.

The diameter of the circular lens is determined according to the size of the illumination area IR on the mask M, the working distance, the numerical aperture (NA) of the illumination beam EL1, and the non-telecentricity of the chief ray of the illumination beam EL1 illustrated in FIG. 5A. . In Fig. 5B, attention is paid to the four corners of the illumination region IR (here, the Y direction centered on the point Q1 through which the optical axis BX1 passes is the rectangle of the long side) set on the mask M. When one of the four corners is set to FFa, the point FFa in the illumination area IR is irradiated by the part of the illumination light beam EL1a which is substantially circular in the illumination light beam EL1 of the fourth relay lens 56d. The size of the circular distribution of the partial illumination beam EL1a on the fourth relay lens 56d is determined by the working distance (focus distance) or the numerical aperture (NA) of the illumination beam EL1.

Further, as illustrated in Fig. 5A, the principal rays of the illumination light beam EL1 on the mask M are in a state of being non-telecentric in the XZ plane, so that the portion of the illumination beam EL1a passing through the portion FFa on the mask M is mainly The light is shifted by a certain amount in the Z direction on the fourth relay lens 56d. In this manner, the light beams which are formed by superimposing all of the distributions of the illumination beams on the fourth relay lens 56d at the four corners (and on the outer edge) of the illumination region IR are distributed on the fourth relay lens 56d. The illumination beam EL1 is incident on the area S2. Therefore, the distribution (diffusion) of the illumination light beam EL1 on the fourth relay lens 56d is also added to the non-telecentric state of the illumination light beam EL1 in the XZ plane to be included in the incident region S2 (the illumination light beam EL1). The shape and size of the fourth relay lens 56d may be determined in such a manner as to be the size of the distribution area.

Similarly to the fourth relay lens 56d, the other lens 56c in Fig. 4 or The mirrors 56a and 56b can also determine the shape and size of the lens in consideration of the distribution of the substantial illumination light beam EL1 and the size of the lens.

In general, a high-precision lens having power (refractive power) is produced by polishing a surface of a circular glass material such as optical glass or quartz, but it is also possible to prepare an injection corresponding to, for example, the method of FIG. 5B from the beginning. The size of the region S2 is substantially small, substantially elliptical, substantially oblong, or substantially rectangular, and the surface thereof is ground to form the desired lens surface. In this case, it is not necessary to cut off the portion corresponding to the portion of the non-injection region S1.

<polarized beam splitter>

Next, the configuration of the polarization beam splitter PBS provided in the exposure apparatus U3 of the first embodiment will be described with reference to Figs. 6 and 8 to 11 . Fig. 8 is a view showing the configuration around the polarizing film of the polarization beam splitter of the first embodiment. Fig. 9 is a view showing the configuration around the polarizing film of the polarization beam splitter of the comparative example of the first embodiment. Fig. 10 is a graph showing the transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig. 8. Fig. 11 is a graph showing the transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig. 9.

As shown in FIG. 6, the polarization beam splitter PBS has a first 稜鏡91, a second 稜鏡92, and a polarizing film 93 provided between the first 稜鏡91 and the second 稜鏡92. The first 稜鏡91 and the second 稜鏡92 are made of quartz glass, and are triangular ridges of different triangular shapes in the XZ plane. The polarizing beam splitter PBS is joined by the polarizing film 93 between the first 稜鏡91 and the second 稜鏡92 of the triangle, and has a square shape in the XZ plane.

The first 稜鏡91 is the 稜鏡 of the side on which the illumination light beam EL1 and the projection light beam EL2 are incident. The first side 91 has a first surface D1 from which the illumination light beam EL1 of the illumination optical module ILM is incident and a second surface D2 from which the projection light beam EL2 from the mask M is incident. The first side D1 is relative The chief ray of the illumination beam EL1 is a vertical plane. Further, the second surface D2 is a vertical plane with respect to the chief ray of the projection light beam EL2.

The second 稜鏡92 is the 稜鏡 of the side from which the projection light beam EL2 of the polarizing film 93 is emitted. The second side 92 has a third surface D3 that faces the first surface D1 of the first one 91 and a fourth surface D4 that faces the second surface D2 of the first one 91. The fourth surface D4 is a surface on which the projection light beam EL2 of the first pupil 91 is transmitted through the polarizing film 93, and the principal ray of the projection light beam EL2 that is emitted is a vertical surface. At this time, the first surface D1 and the opposite third surface D3 are non-parallel, and the second surface D2 is parallel to the opposite fourth surface D4.

The illumination light beam EL1 that is emitted from the first 稜鏡91 to the second 稜鏡92 is incident on the polarizing film 93. The polarizing film 93 reflects the S-polarized (linearly polarized) illumination light beam EL1 and transmits the P-polarized (linearly polarized) projection light beam EL2. Based polarizing film 93 in a thickness direction of the laminate as a main component silicon dioxide (SiO ₂₎ of the main membrane component is a hafnium oxide (SiO ₂₎ is formed of the membrane. A material in which the yttrium oxide system and the quartz beam absorb less light is a material that is less likely to change due to absorption of the light beam. This polarizing film 93 is a film of Brewster's angle θB. Here, the Brewster angle θB is a P-polarized reflectance of 0.

The Brewster angle θB is calculated by the following formula. Further, the refractive index of nh is yttrium oxide, the refractive index of nL is cerium oxide, and the refractive index of ns is yttrium (quartz glass).

θB=arcsin([(nh ² ×nL ² )/{ns ² (nh ² +nL ² )}] ^0.5 )

Here, if nh=2.07 (HfO ₂ ), nL=1.47 (SiO ₂ ), and ns=1.47 (quartz glass), the Brewster angle θB of the polarizing film 93 is approximately 54.6° according to the above formula.

However, the refractive indices nh, nL, and ns of the respective materials are not limited to the above numerical values. The refractive index will vary from approximately ultraviolet to visible wavelength, with a slight range. Further, there is also a case where the refractive index changes due to a slight addition of various materials. For example, the refractive index nh of yttrium oxide is distributed in the range of 2.00 to 2.15, and the refractive index nL of cerium oxide is distributed in the range of 1.45 to 1.48. The refractive index ns of bismuth (quartz glass) also changes if the refractive index is changed by the wavelength used. When the refractive index ns is in the range of 1.45 to 1.48 similarly to the above SiO ₂ , the Brewster angle θB of the polarizing film 93 derived from the above formula has a range of 52.4° to 57.3°.

As described above, although the refractive indices nh, nL, and ns of the respective materials may vary somewhat depending on the material composition or the wavelength of use, the Brewster angle θB may also change, but in the following specific examples, θB = 54.6° will be described.

At this time, when the auxiliary line L1 is drawn as shown in FIG. 6, it is understood that the angle θ2 formed by the polarizing film 93 and the first surface D1 is the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93. The same angle. That is, the first meandering 91 is formed such that the angle θ2 formed by the first surface D1 and the polarizing film 93 is equal to the incident angle θ1 of the chief ray of the illumination light beam EL1.

In addition, in FIG. 6, although the illumination light beam EL1 is reflected by the polarizing film 93, the reflected light (projection light beam EL2) from the mask M is transmitted by the polarizing film 93, and the polarizing beam splitter PBS is comprised, The illumination light beam EL1 of the polarizing film 93 is opposite to the reflection/transmission permeability of the projection light beam EL2. That is, the illumination light beam EL1 can also be transmitted through the polarizing film 93, and the reflected light (projection light beam EL2) from the mask M can be reflected on the polarizing film 93. Such an embodiment will be described later.

As shown in FIG. 8, the direction in which the polarizing film 93 connects the first weir 91 and the second weir 92 is the film thickness direction. The polarizing film 93 has the first film body H1 of cerium oxide and the second film body H2 of cerium oxide, and the first film body H1 and the second film body H2 are laminated in the thickness direction. Specifically, the polarizing film 93 is a periodic layer in which a plurality of layers are periodically laminated in the film thickness direction by the layer body H of the first film body H1 and the second film body H2. Here, the incident of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 When the angle θ1 is Brewster angle θB of 54.6°, the polarizing film 93 is formed into a periodic layer of 18 cycles or more and 30 cycles or less. The layer body H includes a first film body H1 having a film thickness λ/4 wavelength of the illumination light beam EL1, a first film body H1 disposed on both sides in the film thickness direction across the first film body H1, and a wavelength λ of the illumination light beam EL1. One of the film thicknesses of /8 wavelengths is opposite to the second film body H2. In the layer body H configured in this manner, by stacking a plurality of layers in the film thickness direction, each of the second film bodies H2 of the layer body H is integrated with each of the second film bodies H2 of the adjacent layer bodies H to form a λ/4 wavelength. The second film body H2 having a film thickness. Therefore, the film body on both sides in the film thickness direction of the polarizing film 93 is one of the film thicknesses of λ/8 wavelengths, and the second film body H2 is between the film thickness of the λ/8 wavelength and the second film body H2. The first film body H1 having a film thickness of λ/4 wavelength and the second film body H2 having a film thickness of λ/8 wavelength are alternately provided.

Further, the polarizing film 93 is fixed between the first crucible 91 and the second crucible 92 by an adhesive or optical glue. For example, the polarizing beam splitter PBS is formed by forming the polarizing film 93 on the first crucible 91 and then bonding the second crucible 92 to the polarizing film 93 through an adhesive.

Next, the transmission characteristics and reflection characteristics of the above-described polarization beam splitter PBS will be described with reference to FIG. In Fig. 10, the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 of the polarization beam splitter PBS is set to a Brewster angle θB of 54.6°, the polarizing film 93 is a 21-period layer, and the illumination light beam EL1 is used. YAG laser with triple harmonics. In the graph shown in Fig. 10, the horizontal axis thereof is the incident angle θ1, and the vertical axis thereof is the transmittance/reflectance. In the graph shown in FIG. 10, Rs is a reflected beam of S-polarized light incident on the polarizing film 93, Rp is a reflected beam of P-polarized light incident on the polarizing film 93, and Ts is a transmitted beam of S-polarized light incident on the polarizing film 93. Tp is a transmitted light beam that is incident on the P-polarized light of the polarizing film 93.

Here, the polarizing film 93 of the polarization beam splitter PBS is configured to reflect the reflected beam of the S-polarized light (illumination beam) and to transmit the transmitted beam (projection beam) of the P-polarized light. The polarizing film 93 having a high reflectance of the reflected light beam Rs and a high transmittance of the transmitted light beam Tp is excellent. In other words, the polarizing film is excellent in film characteristics in which the reflectance of the reflected light beam Rp is low and the transmittance of the transmitted light beam Ts is low. In Fig. 10, the range of transmittance/reflectance of the polarizing film 93 which can be most suitably used is the transmittance of the reflected beam Rs and the transmittance of the transmitted beam Tp with respect to the Brewster angle θB of 54.6°, and transmission is allowed. Rate/reflectance is a range of -5% reduction. That is, since the transmittance/reflectance at the Brewster angle θB is 100%, the transmittance of the transmitted light beam Ts and the transmittance of the transmitted light beam Tp of 95% or more are the most suitable transmission of the polarizing film 93. Rate/reflectance range. In the case shown in FIG. 10, in the range where the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp are 95% or more, the range of the incident angle θ1 is 46.8° or more and 61.4° or less.

As can be seen from the above, in Fig. 10, since the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 of the polarization beam splitter PBS is set to the Brewster angle θB of 54.6°, the illumination beam can be used. Since the range of the incident angle of the light other than the chief ray of EL1 is 46.8° or more and 61.4° or less, the angular range of the incident angle of the illumination light beam EL1 incident on the polarizing film 93 can be made into the range of 14.6°.

Therefore, in the illumination optical module ILM of the exposure device U3, the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 of the polarization beam splitter PBS has an angular range of 46.8° or more and 61.4° or less, and can be an illumination beam. The illumination beam EL1 is emitted in such a manner that the chief ray of EL1 becomes Brewster angle θB of 54.6°.

Next, a polarization beam splitter PBS which is a comparative example of the polarization beam splitter PBS of the first embodiment shown in Fig. 8 will be described with reference to Fig. 9 . The polarizing beam splitter PBS of the comparative example has substantially the same configuration as that of the first embodiment, and has a first 稜鏡91 and a second 稜鏡92. And a polarizing film 100 disposed between the first side 91 and the second side 92. Since the first step 91 and the second block 92 are the same as those in the first embodiment, the description thereof is omitted.

As the polarizing film 100 of the polarizing beam splitter PBS of the comparative example, the chief ray of the illumination light beam EL1 of the polarizing film 100 is a film having an incident angle θ1 of 45°. Specifically, when the chief ray of the illumination light beam EL1 incident on the polarizing film 100 is at an incident angle θ1 of 45°, the polarizing film 100 is laminated with the layer body H of the first embodiment in the film thickness direction. Above, the cycle layer below 40 cycles.

Next, the transmission characteristics and reflection characteristics of the polarization beam splitter PBS of the comparative example will be described with reference to FIG. In Fig. 11, the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 100 of the polarization beam splitter PBS is set to an incident angle of 45°, the polarizing film 100 is a 33-period layer, and the illumination light beam EL1 is three. Harmonic YAG laser. In the graph shown in Fig. 11, the horizontal axis is the incident angle, the vertical axis is the transmittance/reflectance, Rs is the reflected light beam of the S-polarized light incident on the polarizing film 100, and the Rp is the P-polarized light incident on the polarizing film 100. The reflected light beam, Ts is transmitted into the S-polarized transmitted light beam of the polarizing film 100, and Tp is incident on the P-polarized transmitted light beam of the polarizing film 100.

In Fig. 11, the range of transmittance/reflectance of the polarizing film 100 which can be most suitably used is such that the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp are 95% or more. In the case shown in Fig. 11, in the range where the reflectance of the reflected light beam Rs and the transmittance of the transmitted light beam Tp are 95% or more, the range of the incident angle θ1 is 41.9° or more and 48.7° or less.

As described above, in FIG. 11, when the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 100 of the polarization beam splitter PBS is 45, the chief ray of the illumination light beam EL1 can be used. Since the range of the incident angle of the light is set to 41.9° or more and 48.7° or less, the angular range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 100 can be made 6.8°. The scope. Therefore, the polarization beam splitter PBS shown in FIG. 8 can expand the angular range of the incident angle θ1 of the illumination light beam EL1 by about two times as compared with the polarization beam splitter PBS shown in FIG.

<Component Manufacturing Method>

Next, a method of manufacturing a component will be described with reference to FIG. Fig. 12 is a flow chart showing the method of manufacturing the device of the first embodiment.

In the device manufacturing method shown in FIG. 12, for example, the function and performance design of a display panel formed using a self-luminous element such as an organic EL are designed, and a desired circuit pattern and wiring pattern are designed by CAD or the like (step S201). Next, a mask M of a desired layer amount is produced in accordance with each of various pattern patterns designed by CAD or the like (step S202). The supply reel FR1 of the flexible substrate P (resin film, metal foil film, plastic, etc.) on which the substrate of the display panel is wound is prepared (step S203). Further, the roll substrate P prepared in the step S203 may be a surface whose surface is modified as necessary, or a bottom layer (for example, a fine unevenness by an imprint method) may be formed in advance, or a layer of light may be laminated in advance. Inductive functional film or transparent film (insulating material).

Then, an electrode constituting the display panel element or a bottom layer formed of a wiring, an insulating film, a TFT (thin film semiconductor) or the like is formed on the substrate P, and a light-emitting element made of a self-luminous element such as an organic EL is formed on the substrate. Layer (display pixel portion) (step S204). In the step S204, the conventional lithography process for exposing the photoresist layer using the exposure device U3 described in the previous embodiments is included, but the substrate P pattern coated with the photosensitive decane coupling agent instead of the photoresist is also included. Exposure process for forming a pattern of water-repellent on the surface, exposing the pattern of the photo-sensitive catalyst layer, forming a metal film pattern (wiring, electrode, etc.) by electroless plating, or containing a silver-colored process The processing of drawing a pattern such as a conductive ink of a rice particle or the like.

Next, for each display continuously manufactured on the long substrate P in a roll manner The panel element dicing the substrate P or bonding a protective film (environmental barrier layer) or a color filter film to the surface of each display panel element, and assembling the device (step S205). Next, an inspection step of whether the display panel element can be normally operated or whether the desired performance and characteristics are satisfied is performed (step S206). Through the above manner, a display panel (flexible display) can be manufactured.

As described above, in the first embodiment, in the illumination optical system IL using the epi-illumination of the polarization beam splitter PBS, the illumination beam EL1 is reflected by the polarization beam splitter PBS and the projection beam EL2 is transmitted. The optical system IL and the projection optical system PL share a polarization beam splitter PBS, and the lens elements of the illumination optical module ILM at least close to the polarization beam splitter PBS are shaped to correspond to the distribution of the illumination light beam EL1. The illumination optical module ILM and the polarization beam splitter PBS can be disposed between the mask M and the projection optical module PLM. Therefore, the physical interference between the illumination optical system IL and the projection optical system PL can be alleviated, in particular, the physical interference condition of the illumination optical module ILM and the projection optical module PLM can be alleviated, and the illumination optical module ILM and the polarization beam splitter can be improved. The arrangement degree of freedom of the PBS, the degree of freedom in arrangement of the projection optical module PLM and the polarization beam splitter PBS, and the illumination optical system IL and the projection optical system PL can be easily arranged.

In the first embodiment, the fourth relay lens 56d or the third relay lens 56c adjacent to the polarization beam splitter PBS includes a portion through which the substantially illumination light beam EL1 passes (injection region S2), and is absent. Substantially the lens shape of the portion (non-injection region S1) through which the illumination beam EL1 does not pass, so that even for the small illumination optical module ILM, the illumination beam EL1 is hardly lost, and the illumination region IR can be The lighting conditions (telecentricity, illuminance uniformity, etc.) are maintained at high precision while improving the freedom of arrangement of the illumination optical module ILM and the projection optical module PLM.

Further, in the first embodiment, the illumination optical module ILM is included. One of the lenses is partially defective to reduce the outer shape, but one of the lenses included in the projection optical module PLM may be partially damaged to reduce the outer shape. In this case, similarly to the illumination optical module ILM, a lens close to the polarizing beam splitter PBS side, for example, one of the lenses on the side of the first deflecting member 70 of the first lens group 71 can be partially broken to reduce the outer shape.

In the first embodiment, the polarizing film 93 of the polarization beam splitter PBS can be formed by laminating the first film body H1 of the cerium oxide and the second film body H2 of cerium oxide in the film thickness direction. Therefore, the polarizing film 93 can make the reflectance of the reflected light beam (illumination light beam) of the S-polarized light incident on the polarizing film 93 and the transmittance of the transmitted light beam (projection light beam) of the P-polarized light incident on the polarizing film 93 high. Thereby, even when the illumination beam EL1 having a high energy density at a wavelength lower than the i-line is incident on the polarizing film 93, the polarizing beam splitter PBS can suppress the load applied to the polarizing film 93, and can reflect the reflected beam. The transmitted beams are very well separated.

Further, in the first embodiment, the polarizing film 93 can be formed as a film having a Brewer angle θB at which the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93 is 54.6°. In other words, by setting the chief ray of the illumination light beam EL1 incident on the polarizing film 93 to the Brewster angle θB of 54.6°, the angle of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 can be set to 46.8°. Above, below 61.4°. Therefore, the angular range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 can be expanded. Thereby, the numerical aperture NA of the lens disposed adjacent to the polarization beam splitter PBS can be increased in accordance with an increase in the angular range of the incident angle θ1 of the illumination light beam EL1. Therefore, by using a lens having a large numerical aperture NA, the resolution of the exposure device U3 can be improved, and a fine mask pattern can be exposed to the substrate P.

Further, the refractive index unevenness of the material (film body) constituting the polarizing film 93 is such that the Brewster angle θB of the polarizing film 93 in the first embodiment can be in the range of 52.4° to 57.3°. The angle range of the incident angle θ1 of the illumination light beam EL1 incident on the polarizing film 93 may be set as long as the range is considered.

Further, in the first embodiment, the first surface D1 and the third surface D3 of the polarization beam splitter PBS can be made non-parallel, and the second surface D2 and the fourth surface D4 can be made parallel. In the first embodiment, the angle θ2 formed by the first surface D1 and the polarizing film 93 can be made the same as the incident angle θ1 of the chief ray of the illumination light beam EL1 incident on the polarizing film 93. Therefore, the first surface D1 can be made a vertical surface as compared with the chief ray of the illumination light beam EL1 incident on the first surface D1, and the second surface can be made closer to the chief ray of the projection light beam EL2 incident on the second surface D2. D2 becomes a vertical plane. Thereby, the polarization beam splitter PBS can suppress the reflection of the illumination light beam EL1 on the first surface D1 and suppress the reflection of the projection light beam EL2 on the second surface D2.

Further, in the first embodiment, the polarizing film 93 as the periodic layer can be formed by periodically laminating a plurality of layers in the film thickness direction in the predetermined layer body H. At this time, for example, the incident angle θ1 of the chief ray of the illumination light beam EL1 is a polarizing film 93 of the Brewster angle θB of 54.6° ( FIG. 8 ), and the incident angle θ1 of the chief ray of the illumination light beam EL1 is The 45° polarizing beam splitter PBS polarizing film 100 (Fig. 9) can reduce the periodic layer. Therefore, the polarizing film 93 of FIG. 8 can have a simpler structure than the polarizing film 100 of FIG. 9, and the manufacturing cost of the polarizing beam splitter PBS can be reduced.

Further, in the first embodiment, the polarizing film 93 can be very suitably fixed between the first weir 91 and the second weir 92 by an adhesive or optical glue. Further, in the first embodiment, the polarization beam splitter PBS and the quarter-wave plate 41 may be integrally fixed by an adhesive or optical glue. In this case, the occurrence of the relative positional shift of the polarization beam splitter PBS and the quarter-wavelength plate 41 can be suppressed.

Further, in the first embodiment, the wavelength below the i-line can be used as the illumination light beam EL1. For example, since a harmonic laser or a pseudo-molecular laser can be used, the illumination light beam EL1 suitable for the exposure processing can be used.

Further, in the first embodiment, since the polarization direction of the quarter-wave plate 41 can be adjusted by the polarization adjusting mechanism 68 to adjust the illuminance of the projection area PA, the illuminance of the plurality of projection areas PA1 to PA6 can be made uniform.

[Second Embodiment]

Next, an exposure apparatus U3 according to the second embodiment will be described with reference to Fig. 13 . In the description of the first embodiment, the same components as those in the first embodiment will be described with the same reference numerals as in the first embodiment. Fig. 13 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a second embodiment. In the exposure apparatus U3 of the first embodiment, the cylindrical reflection mask M is held by the rotatable mask holding cylinder 21, but the exposure apparatus U3 of the second embodiment has a flat shape. The reflective reticle MA is held in a movable reticle holding mechanism 11.

In the exposure apparatus U3 of the second embodiment, the mask holding mechanism 11 includes the mask holder 110 that holds the planar mask MA, and the mask holder 110 in the X direction in a plane orthogonal to the center plane CL. Scan the mobile device (not shown).

Since the mask surface P1 of the mask MA of FIG. 13 is substantially parallel to the XY plane, the chief ray of the projection beam EL2 reflected from the mask MA is perpendicular to the XY plane. Therefore, the chief ray of the illumination light beam EL1 of the illumination optical systems IL1 to IL6 of the illumination areas IR1 to IR6 on the illumination mask MA is also arranged to be perpendicular to the XY plane.

The main ray of the projection beam EL2 reflected by the reticle MA is perpendicular to the XY plane In the straight state, the first line L1 and the second line L2 which define the arrangement area E also change in accordance with the chief ray of the projection light beam EL2. That is, the second line L2 is perpendicular to the XY plane from the intersection of the reticle MA and the chief ray of the projection beam EL2, and the first line L1 is from the intersection of the reticle MA and the chief ray of the projection beam EL2. Parallel to the direction of the XY plane. Therefore, the arrangement of the illumination optical module ILM can be appropriately changed in accordance with the change of the arrangement area E, and the arrangement of the polarization beam splitter PBS is appropriately changed in accordance with the arrangement change of the illumination optical module ILM.

Further, when the chief ray of the projection light beam EL2 reflected by the mask MA is perpendicular to the XY plane, the first reflection surface P3 of the first deflecting member 70 included in the first optical system 61 of the projection optical module PLM is The projection light beam EL2 from the polarization beam splitter PBS is reflected and the reflected projection light beam EL2 is incident on the first concave mirror 72 through the first lens group 71. Specifically, the first reflecting surface P3 of the first deflecting member 70 is set to be substantially 45° with respect to the second optical axis BX2 (XY plane).

Further, in the second embodiment, similarly to the previous FIG. 2, when viewed in the XZ plane, the center of the illumination region IR1 (and IR3, IR5) on the mask MA is illuminated to the illumination region IR2 (and IR4, IR6). The circumference of the center point and the circumference of the center point of the projection areas PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) Set to be substantially equal.

In the exposure apparatus U3 of Fig. 13, the moving means (the linear motor for scanning exposure or the actuator for fine movement, etc.) of the mask holding mechanism 11 is controlled by the lower control device 16, and is synchronized with the rotation of the substrate supporting cylinder 25. The reticle stage 110 is driven. The exposure apparatus U3 of Fig. 11 must perform scanning (expansion) of returning the mask MA to the initial position in the -X direction after scanning exposure in the +X direction of the mask MA. Therefore, the substrate is supported at a certain speed When the cylinder 25 is continuously rotated and the substrate P is continuously conveyed at a constant speed, the substrate P is not exposed to the pattern during the winding operation of the mask MA, and the panel is formed discretely (separately) in the transport direction of the substrate P. pattern. However, practically, since the speed of the substrate P (here, the peripheral speed) and the speed of the reticle MA at the time of scanning exposure are assumed to be 50 mm/s to 100 mm/s, it is only required to be, for example, 500 mm at the time of rewinding the reticle MA. When the mask stage 110 is driven at the highest speed of /s, the margin of the pattern for the panel formed on the substrate P in the transport direction can be reduced.

[Third embodiment]

Next, an exposure apparatus U3 according to the third embodiment will be described with reference to Fig. 14 . In addition, in order to avoid redundancy, only the part different from the first embodiment (or the second embodiment) will be described, and the same constituent elements as those of the first embodiment (or the second embodiment) will be given. The same symbols as in the first embodiment (or the second embodiment) will be described. Fig. 14 is a view showing the configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment. The exposure apparatus of Fig. 14 is a so-called scanning exposure apparatus which projects the reflected light (projection light beam EL2) from the reflective cylindrical mask onto a flexible substrate which is transported in a planar manner. In P, the peripheral speed of the rotation of the cylindrical mask M is synchronized with the transport speed of the substrate P.

The exposure apparatus U3 of the third embodiment is an example of an exposure apparatus in which the reflection/transmission characteristics of the illumination light beam EL1 and the projection light beam EL2 in the polarization beam splitter PBS are opposite. In Fig. 14, at least the relay lens 56 disposed along the optical axis BX1 of the illumination optical module ILM is closest to the relay lens 56 of the polarization beam splitter PBS, by eliminating the portion of the illumination beam EL1 that does not pass (non-injection) The shape of the area S1) avoids interference with the space of the projection optical module PLM. Further, the extension line of the optical axis BX1 of the illumination optical module ILM intersects with the first axis AX1 (the line which is the center of rotation).

The second surface D2 and the fourth surface D4 in which the polarization beam splitters PBS are arranged in parallel with each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, and are arranged as the first surface D1 and the projection optical module PLM. The optical axis BX4 (fourth optical axis) is vertical. The angle of intersection of the optical axis BX1 and the optical axis BX4 in the ZX plane is the same as that of the previous pattern 6 of the polarizing film 93, but is set to an angle other than 90 degrees here so that the projection beam EL2 has a Brewster angle θB (52.4). °~57.3°) reflection.

The polarizing film 93 (wavefront dividing surface) of the polarization beam splitter PBS of the present embodiment can be formed by laminating a plurality of layers of the first film body of cerium oxide and the second film body of cerium oxide in the thickness direction. Therefore, the polarizing film 93 can make the reflectance of the S-polarized light incident on the polarizing film 93 and the transmittance of the P-polarized light incident on the polarizing film 93 high. Thereby, even when the illumination beam EL1 having a high energy density at a wavelength lower than the i-line is incident on the polarizing film 93, the polarizing beam splitter PBS can suppress the load applied to the polarizing film 93, and can reflect the reflected beam. The transmitted beams are very well separated. The polarizing film 93 is a laminated structure of the first film body of cerium oxide and the second film body of cerium oxide, and can be applied to the polarization beam splitter PBS of the first embodiment or the second embodiment.

In the case of the third embodiment, the P-polarized illumination light beam EL1 is incident from the fourth surface D4 of the polarization beam splitter PBS. Therefore, the illumination light beam EL1 is transmitted through the polarizing film 93 from the second surface D2, is converted into circularly polarized light by the quarter-wavelength plate 41, and is irradiated onto the illumination region IR on the mask surface P1 of the mask M. With the rotation of the mask M, the projection light beam EL2 (circularly polarized light) generated (reflected) from the mask pattern appearing in the illumination region IR is converted into S-polarized light by the quarter-wavelength plate 41, and is incident on the polarization beam. The second side D2 of the beam PBS. The projection light beam EL2 that becomes the S-polarized light is reflected by the polarizing film 93 and is emitted from the first surface D1 of the polarization beam splitter PBS to the projection optical module PLM.

In this embodiment, the illumination area on the reticle M passes through the projection light beam EL2. The chief ray Ls of the IR center (point Q1) is incident on the first lens system G1 of the projection optical module PLM at a position eccentric from the optical axis BX4 of the projection optical module PLM. When the diffusion (numerical aperture NA) of the projection beam EL2 is small, by making the shape of the portion where the projection beam EL2 in the lens system G1 does not substantially pass, the polarizing beam splitter PBS is brought close to the cylindrical mask M. It is possible to prevent spatial interference between a portion of the projection optical module PLM (lens system G1) and a portion of the cylindrical mask M or the illumination optical module ILM (lens 56).

In FIG. 14, the projection optical module PLM is a projection optical system in which the lens system G1 and the lens system G2 are arranged along the optical axis BX4. However, the projection optical module PLM is not limited to this type, and may be concave or convex or A counter-refractive projection optical system in which a flat mirror and a lens are combined. Further, the lens system G1 may be a total refraction system, and the lens system G2 may be a catadioptric system, and the magnification of the image of the pattern in the illumination region IR on the mask surface P1 may be formed on the projection area PA on the substrate P. Any one of enlargement or reduction other than (1).

In FIG. 14, the substrate supporting member PH of the support substrate P is formed into a flat surface, and an air bearing layer (gas bearing) of about several μm is formed between the surface and the back surface of the substrate P, and at least the substrate P is included. In a predetermined range of the projection area PA, a transport mechanism that applies a predetermined tension to the substrate P while holding the substrate P to be flat and transports the substrate P in the longitudinal direction (X direction) is provided. Of course, this embodiment may be configured such that the substrate P is wound around a portion of the cylindrical body like the substrate supporting cylinder 25 shown in FIG. 2 previously.

Further, an exposure unit including an illumination optical module ILM, a polarization beam splitter PBS, a quarter-wavelength plate 41, and a projection optical module PLM as shown in FIG. 14 is applied to the rotation center axis of the mask M (the first axis). ) When the number of AX1 is set to plural and becomes a plurality, it is only necessary to include the mask M. The first axis AX1, which is the central axis of rotation, may be disposed symmetrically with respect to the center plane CL parallel to the ZY plane.

In the third embodiment described above, the polarizing beam splitter PBS using the polarizing film (multilayer film) 93 having the laminated structure of the yttrium oxide film body and the cerium oxide film body is used even in the high-luminance Ray of the ultraviolet wavelength region. In the case of the light beam as the illumination light beam EL1, it is also possible to stably continue the high-resolution pattern exposure. The polarization beam splitter PBS having such a polarizing film 93 can be used in the same manner as in the first embodiment and the second embodiment.

[Fourth embodiment]

Next, an exposure apparatus U3 according to the fourth embodiment will be described with reference to Fig. 15 . In addition, in order to avoid duplication, only the parts different from the first embodiment (to the third embodiment) are described, and the same constituent elements as those of the first embodiment (to the third embodiment) are given. The same symbols as those in the first embodiment (to the third embodiment) will be described. Fig. 15 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment. In the exposure apparatus U3 of the fourth embodiment, the cylindrical reflection mask M is held by the rotatable mask holding cylinder 21, but the exposure apparatus U3 of the fourth embodiment has a flat shape. The reflective reticle MA is held in a movable reticle holding mechanism 11.

In the exposure apparatus U3 of the fourth embodiment, the mask holding mechanism 11 includes the mask holder 110 that holds the planar mask MA, and the mask holder 110 in the X direction in a plane orthogonal to the center plane CL. Scan the mobile device (not shown).

Since the mask surface P1 of the mask MA of FIG. 15 is substantially parallel to the XY plane, the chief ray of the projection beam EL2 reflected from the mask MA is perpendicular to the XY plane. Therefore, the illumination beam of the illumination optical system IL1~IL6 of each illumination area IR1~IR6 on the illumination mask MA The chief ray of EL1 is also arranged to be perpendicular to the XY plane.

When the chief ray of the illumination beam EL1 illuminating the reticle MA is perpendicular to the XY plane, the polarization beam splitter PBS is configured such that the incident angle θ1 of the chief ray of the illumination beam EL1 incident on the polarizing film 93 becomes Brewster. The angle θB (52.4° to 57.3°), the chief ray of the illumination light beam EL1 reflected by the polarizing film 93 is perpendicular to the XY plane. With the arrangement change of the polarization beam splitter PBS, the arrangement of the illumination optical module ILM is also appropriately changed.

Further, when the chief ray of the projection light beam EL2 reflected from the mask MA is perpendicular to the XY plane, the first reflection surface P3 of the first deflecting member 70 included in the first optical system 61 of the projection optical module PLM is The projection light beam EL2 from the polarization beam splitter PBS is reflected and the reflected projection light beam EL2 is incident on the first concave mirror 72 through the first lens group 71. Specifically, the first reflecting surface P3 of the first deflecting member 70 is set to be substantially 45° with respect to the second optical axis BX2 (XY plane).

Further, in the fourth embodiment, similarly to the previous FIG. 2, when viewed in the XZ plane, the center point of the illumination area IR1 (and IR3, IR5) on the mask MA to the illumination area IR2 (and IR4, IR6) The circumference of the center point and the circumference of the center point of the projection areas PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) Set to be substantially equal.

In the exposure device U3 of Fig. 15, the moving device (the linear motor for scanning exposure or the actuator for fine movement, etc.) of the mask holding mechanism 11 is controlled by the lower control device 16, and is synchronized with the rotation of the substrate supporting cylinder 25. The reticle stage 110 is driven. In the exposure apparatus U3 of Fig. 15, it is necessary to perform scanning (expansion) of returning the mask MA to the initial position in the -X direction after scanning exposure in the +X direction of the mask MA. Therefore, the substrate is supported at a certain speed When the cylinder 25 is continuously rotated and the substrate P is continuously conveyed at a constant speed, the substrate P is not exposed to the pattern during the winding operation of the mask MA, and the panel is formed discretely (separately) in the transport direction of the substrate P. pattern. However, practically, since the speed of the substrate P (here, the peripheral speed) and the speed of the reticle MA at the time of scanning exposure are assumed to be 50 mm/s to 100 mm/s, it is only required to be, for example, 500 mm at the time of rewinding the reticle MA. When the mask stage 110 is driven at the highest speed of /s, the margin of the pattern for the panel formed on the substrate P in the transport direction can be reduced.

[Fifth Embodiment]

Next, an exposure apparatus U3 according to the fifth embodiment will be described with reference to Fig. 16 . In addition, in order to avoid duplication, only the parts different from the first embodiment (to the fourth embodiment) are described, and the same constituent elements as those of the first embodiment (to the fourth embodiment) are given. The same symbols as those in the first embodiment (to the fourth embodiment) will be described. Fig. 16 is a view showing the configuration of an exposure apparatus (substrate processing apparatus) according to a fifth embodiment. The exposure apparatus U3 of the fifth embodiment is an example of an exposure apparatus in which the reflection/transmission characteristics of the illumination light beam EL1 and the projection light beam EL2 in the polarization beam splitter PBS are opposite. In FIG. 16, at least the relay lens 56 disposed along the optical axis BX1 of the illumination optical module ILM is at least closest to the relay lens 56 of the polarization beam splitter PBS, and is formed by cutting out the shape of the portion through which the illumination light beam EL1 does not pass. Avoid interference with the space of the projection optics module PLM. Further, the extension line of the optical axis BX1 of the illumination optical module ILM intersects with the first axis AX1 (the line which is the center of rotation).

The second surface D2 and the fourth surface D4 in which the polarization beam splitters PBS are arranged in parallel with each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, and are arranged as the first surface D1 and the projection optical module PLM. The optical axis BX4 (fourth optical axis) is vertical. The angle of intersection of the optical axis BX1 and the optical axis BX4 in the ZX plane is the same as that of the previous embodiment 6 of the polarizing film 93, but is set here. The angle other than 90 degrees is such that the projection beam EL2 is reflected at the Brewster angle θB (52.4° to 57.3°).

In the case of the present embodiment, the P-polarized illumination light beam EL1 is incident from the fourth surface D4 of the polarization beam splitter PBS. Therefore, the illumination light beam EL1 is transmitted through the polarizing film 93 from the second surface D2, is converted into circularly polarized light by the quarter-wavelength plate 41, and is irradiated onto the illumination region IR on the mask surface P1 of the mask M. With the rotation of the mask M, the projection light beam EL2 (circularly polarized light) generated (reflected) from the mask pattern appearing in the illumination region IR is converted into S-polarized light by the quarter-wavelength plate 41, and is incident on the polarization beam. The second side D2 of the beam PBS. The projection light beam EL2 that becomes the S-polarized light is reflected by the polarizing film 93 and is emitted from the first surface D1 of the polarization beam splitter PBS to the projection optical module PLM.

In the present embodiment, the chief ray Ls passing through the center of the illumination region IR on the mask M in the projection beam EL2 is incident on the first lens of the projection optical module PLM at a position eccentric from the optical axis BX4 of the projection optical module PLM. Department G1. In the case where the diffusion (numerical aperture NA) of the projection beam EL2 is small, spatial interference with the lens 56 of the illumination optical module ILM can be avoided by cutting out the portion of the lens system G1 where the projection beam EL2 does not substantially pass.

In FIG. 16, the projection optical module PLM is a projection optical system in which the lens system G1 and the lens system G2 are arranged along the optical axis BX4. However, the projection optical module PLM is not limited to this type, and may be concave or convex or A counter-refractive projection optical system in which a flat mirror and a lens are combined. Further, the lens system G1 may be a total refraction system, and the lens system G2 may be a catadioptric system, and the magnification of the image of the pattern in the illumination region IR on the mask surface P1 may be formed on the projection area PA on the substrate P. Any one of enlargement or reduction other than (1).

In FIG. 16, the substrate supporting member PH of the support substrate P is formed into a flat surface, and an air bearing layer (gas bearing) of about several μm is formed between the surface and the back surface of the substrate P, and at least the substrate P is included. Within a predetermined range of the projection area PA, one side is provided The substrate P is supplied with a constant tension to convey the substrate P in the longitudinal direction (X direction). Of course, this embodiment may be configured such that the substrate P is wound around a portion of the cylindrical body like the substrate supporting cylinder 25 shown in FIG. 2 previously.

Further, an exposure unit including an illumination optical module ILM, a polarization beam splitter PBS, a quarter-wavelength plate 41, and a projection optical module PLM as shown in FIG. 16 is applied to the rotation center axis of the mask M (the first axis). When a plurality of directions are provided in a plurality of directions, the exposure unit may be disposed symmetrically with respect to the center plane CL parallel to the ZY plane including the first axis AX1 which is the central axis of rotation of the mask M.

In the fifth embodiment described above, the polarizing beam splitter PBS using the polarizing film (multilayer film) 93 having the laminated structure of the yttrium oxide film body and the cerium oxide film body is used even in the high-luminance Ray of the ultraviolet wavelength region. In the case of the light beam as the illumination light beam EL1, it is also possible to stably continue the high-resolution pattern exposure. The polarization beam splitter PBS having such a polarizing film 93 can be used in the same manner as in the first embodiment and the second embodiment.

The exposure apparatus U3 described in each of the above embodiments uses a mask M in which a predetermined mask pattern is fixed in a planar shape or a cylindrical shape, but can also be similarly used to project a variable mask pattern. A device such as a beam splitter of a maskless exposure apparatus disclosed in Japanese Patent No. 4223036.

The maskless exposure apparatus transmits a programmable mirror array that receives the illumination light for reflection reflected by the beam splitter and a beam (reflected light beam) patterned by the mirror array through the beam splitter and the projection system (There is also a case where the microlens array is included) projected onto the substrate. If the polarizing beam splitter PBS as shown in FIG. 8 is used as the beam splitter of such a maskless exposure apparatus, even high-intensity laser light in the ultraviolet wavelength region can be stably used as the illumination light. Continued high resolution pattern exposure.

The polarizing beam splitter PBS used in the previous embodiments is formed by laminating a film body having a main component of cerium oxide (SiO ₂ ) and a film body having a main component of hafnium oxide (HfO ₂ ) in a film thickness direction. , but other materials are also available. For example, also with the use of quartz or silicon dioxide (SiO ₂₎ similarly to the near ultraviolet wavelength 355nm low refractive index and ultraviolet laser light of a high resistance to magnesium fluoride material (MgF _2). Further, similarly to yttrium oxide (HfO ₂ ), zirconia (ZrO ₂ ) which is a material having a low refractive index in the vicinity of 355 nm and a high resistance to ultraviolet laser light can be used. Next, the results of the simulation of the characteristics of the polarizing film 93 obtained by changing the combination of these materials will be described based on FIGS. 17 to 22 below.

Fig. 17 is a view schematically showing a structure in which a film body of hafnium oxide (HfO ₂ ) is used as a material having a high refractive index, and a film body of magnesium fluoride (MgF ₂ ) is used as a material of a low refractive index. If the refractive index nh of yttrium oxide is 2.07, the refractive index nL of magnesium fluoride is 1.40, and the refractive index ns of yttrium (quartz glass) is 1.47, the Brewster angle θB is based on the following equation θB=arcsin([(nh ² ×nL ² )/{ns ² (nh ² +nL ² )}] ^0.5 )

It is known to be about 52.1°.

Therefore, a film having a thickness of 22.8 nm of yttrium oxide is deposited as a periodic layer on a film of magnesium fluoride having a thickness of 78.6 nm, and a polarizing film 93 having a period of 21 cycles is provided in the first layer 91. Between the joint surface of the second jaw 92. In the polarizing beam splitter PBS having the polarizing film 93 shown in Fig. 17, the optical characteristics of Fig. 18 were obtained as a result of the simulation. When the wavelength of the illumination light in the simulation is 355 nm, the reflectance Rp of the P-polarized light is 5% or less (the transmittance Tp is 95% or more), and the incident angle θ1 is 43.5° or more, and the reflectance to the S-polarized light is Rs. The incident angle θ1 of 95% or more (the transmittance Ts is 5% or less) is 59.5° or less. In this case, Good polarization separation characteristics can be obtained in the range of about 15° from -8.6° to +7.4° with respect to the Brewster angle θB (52.1°).

Further, Fig. 19 is a view schematically showing a film body using zirconium oxide (ZrO ₂ ) as a material having a high refractive index and a polarizing film 93 in which a film body of cerium oxide (SiO ₂ ) is used as a material having a low refractive index. If the refractive index nh of zirconia is 2.12, the refractive index nL of cerium oxide is 1.47, and the refractive index ns of cerium (quartz glass) is 1.47, the Brewster angle θB is about 55.2° according to the above formula.

Therefore, a film having a thickness of 20.2 nm of zirconia laminated on a film body having a thickness of 88.2 nm is used as a periodic layer, and a polarizing film 93 having a period of 21 cycles is provided in the first layer 91. Between the joint surface of the second jaw 92. In the polarizing beam splitter PBS having the polarizing film 93 shown in Fig. 19, the optical characteristics of Fig. 20 were obtained as a result of the simulation. When the wavelength of the illumination light in the simulation is 355 nm, the reflectance Rp of the P-polarized light is 5% or less (the transmittance Tp is 95% or more), the incident angle θ1 is 47.7°, and the reflectance Rs for the S-polarized light is The injection angle θ1 of 95% or more (the transmittance Ts is 5% or less) is 64.1° or less. In the case of this example, good polarization separation characteristics were also obtained in the range of about 16.4° from -7.5° to +8.9° with respect to the Brewster angle θB (55.2°).

In addition, FIG. 21 is a view schematically showing a film body using zirconium oxide (ZrO ₂ ) as a material having a high refractive index and a polarizing film 93 in which a film body of magnesium fluoride (MgF ₂ ) is used as a material having a low refractive index. If the refractive index nh of zirconia is 2.12, the refractive index nL of magnesium fluoride is 1.40, and the refractive index ns of bismuth (quartz glass) is 1.47, the Brewster angle θB is about 52.6° according to the above formula.

Therefore, a film body of zirconia having a thickness of 22.1 nm is laminated on a film body of magnesium fluoride having a thickness of 77.3 nm as a periodic layer, and a polarizing film 93 having a thickness of 21 cycles is provided in the first layer 91. Between the joint surface of the second jaw 92. With the polarized light shown in Figure 21 In the polarizing beam splitter PBS of the film 93, the simulation results gave the optical characteristics as shown in Fig. 22. When the wavelength of the illumination light for the simulation is 355 nm, the reflectance Rp of the P-polarized light is 5% or less (the transmittance Tp is 95% or more), the incident angle θ1 is 43.1°, and the reflectance Rs for the S-polarized light is The injection angle θ1 of 95% or more (the transmittance Ts is 5% or less) is 60.7°. In the case of this example, good polarization separation characteristics were also obtained in the range of about 17.6° from -9.5° to +8.1° with respect to the Brewster angle θB (52.6°).

As shown in the previous FIG. 4, the projection light beam EL2 reflected by the mask M is projected onto the substrate P along with the diffusion angle θna limited by the numerical aperture (NA) of the projection optical system PL. The numerical aperture NA is defined by NA=sin(θna), and together with the wavelength λ of the illumination beam EL1, determines the resolution RS of the image of the head of the projection optical system PL. The numerical aperture of the illumination light beam EL1 is also set to be equal to or smaller than the numerical aperture NA of the mask side of the projection optical system PL when the mask M is a flat mask surface as shown in FIG.

For example, when the wavelength λ of the illumination beam EL1 is 355 nm, the process factor (process Fator) k is 0.5, and when 3 μm is obtained as the resolution RS, it is based on RS=k. (λ/NA), the numerical aperture NA of the mask side of the equal-magnification projection optical system PL is about 0.06 (θna ≒ 3.4°). The numerical aperture of the illumination beam EL1 from the illumination optics IL is generally slightly smaller than the numerical aperture NA of the reticle side of the projection optics PL, but is assumed to be equal here.

However, as previously illustrated in FIG. 5A, when the mask surface is a cylindrical mask formed along the cylindrical surface of the radius Rm, the chief ray of the illumination beam EL1 is at a wider angle in the circumferential direction of the cylinder mask. Expansion. Here, if the exposure width in the circumferential direction of the illumination region IR on the photomask shown in FIG. 3 is De, the exposure light width is determined with respect to the chief ray of the illumination light beam EL1 passing through the point Q1 in FIG. 5A. The chief ray of the illumination beam EL1 at the end of the circumferential direction is roughly inclined Oblique at the following angle ψ.

Sinψ≒(De/2)/(Rm/2)

Here, if the radius Rm of the cylindrical mask M is 150 mm and the exposure width De is 10 mm, the angle ψ is about 3.8°. Further, since the angle θna (about 3.4°) of the numerical aperture amount of the illumination light beam EL1 is applied to the chief ray of the illumination light beam EL1 passing through the most circumferential end of the exposure width De, the diffusion of the illumination light beam EL1 toward the illumination region IR is performed. The angle is a range of ±(ψ+θna) with respect to the chief ray of the illumination beam EL1 passing through the point Q1. That is, in the numerical example described above, it is ±7.2°, and the illumination light beam EL1 is distributed over an angular range of 14.4° in the circumferential direction of the cylindrical mask surface.

As described above, the illumination light beam EL1 is set to enter the cylindrical mask surface with a large angular range. However, even if such an angular range is used, the polarization beam splitter PBS of the embodiment shown in FIGS. 8 and 10 will be used. As well as the polarization beam splitter PBS of the embodiment shown in Figs. 17 to 22, the illumination light beam EL1 and the projection light beam EL2 can be well polarized and separated.

Further, the projection optical system PL enlarges and projects the pattern of the mask surface P1 onto the exposure apparatus on the substrate P, and the numerical aperture NAm on the side of the mask surface P1 of the projection optical system PL is increased compared with the numerical aperture NAp on the substrate P side. The amount of large magnification MP. For example, as long as the same analytical force as that obtained by the equal-magnification projection optical system previously exemplified is obtained, the numerical aperture NA of the mask side in the projection optical system PL of the projection optical system PL is about 0.12, corresponding thereto. The diffusion angle θna of the projection beam EL2 is also increased by ±6.8° (width is 14.6°). However, the range of incident angles at which the polarizing beam splitter PBS can be well polarized is about 14.6° in the case of Fig. 10, about 16° in the case of Fig. 18, and about 16.4° in the case of Fig. 20, and then In the case of Fig. 22, it is about 17.6°. In either case, since the diffusion angle θna is covered, the projection exposure can be enlarged with good image quality.

As described above, when the mask M is a cylindrical mask, the blue light including the polarization separation characteristic is selected so as to cover the maximum angular range of the illumination light beam EL1 of the illumination region IR irradiated on the mask surface P1 in the circumferential direction. A polarizing beam splitter PBS that is incident on a range of angles. Further, the Brewster angle θB of the polarization beam splitter PBS illustrated in FIGS. 17 to 22 is 50° or more, and the optical axis BX1 of the illumination optical system and the projection optical system PL are formed as shown in FIGS. 4 and 6 . When the optical axis BX2 (or BX3) is parallel, the illumination beam EL1 that is incident on the cylindrical mask M and the projection direction of the projection beam EL2 reflected on the mask surface in the XZ plane are inclined with respect to the center plane CL. It ensures good imaging performance.

Further, in the above embodiments, the film body of the yttrium oxide constituting the polarizing film 93 or the film body of zirconia exhibits a higher refractive index nh with respect to light in the ultraviolet region (wavelength of 400 nm or less), but the refractive index nh The ratio nh/ns of the refractive index ns of the substrate (稜鏡91, 92) may be 1.3 or more, and a film body of titanium oxide (TiO ₂ ) or a film of tantalum pentoxide (Ta ₂ O ₅ ) may be used as the film body. High refractive index material.

41‧‧‧1/4 wavelength plate

91‧‧‧第1稜鏡

92‧‧‧第2稜鏡

93‧‧‧ polarizing film

AX1‧‧‧1st axis

CL‧‧‧ center face

D1‧‧‧ first side

D2‧‧‧2nd

D3‧‧‧3rd

D4‧‧‧4th

EL1‧‧‧ illumination beam

EL2‧‧‧projection beam

M‧‧‧Photo Mask

PBS‧‧‧ polarizing beam splitter

P1‧‧‧Material cover

Claims (25)

A substrate processing apparatus comprising: a mask holding member that holds a reflection type photomask; and a beam splitter that reflects an incident illumination beam toward the photomask, and causes the illumination beam to be reflected by the mask And the projection optical beam is transmitted; the illumination optical module is configured to inject the illumination beam into the beam splitter; and the projection optical module projects the projection beam transmitted through the beam splitter onto the optically sensitive substrate; The illumination optical system for guiding the illumination beam to the reticle, comprising the illumination optical module and the beam splitter; and a projection optical system for guiding the projection beam to the substrate, comprising the projection optical module and the beam splitter; The optical module and the beam splitter are disposed between the photomask and the projection optical module, and further include a substrate supporting member that supports the substrate by a supporting surface; the mask surface of the photomask is along a first axis The first circumferential surface is formed as a first radius of curvature, and the support surface of the substrate supporting member is a second curvature half centered on the second axis. The second circumferential surface is formed; the first axis is parallel to the second axis; and a central surface passing through the first axis and the second axis and a principal ray of the projection beam are on a first circumferential surface of the mask surface When the angle in the circumferential direction is set to θ, The incident angle β of the chief ray of the illumination beam incident on the beam splitter is in the range of 45° × 0.8 ≦ β ≦ (45 ° + θ / 2) × 1.2. The substrate processing apparatus according to claim 1, wherein the illumination optical system includes an optical member that restricts an illumination region of the reticle to a rectangular region, and the illumination optical module has an illumination beam. And a first lens that is emitted from the beam splitter; and the first lens is formed to have a shape that corresponds to a first incident region through which the illumination beam passes. The substrate processing apparatus according to claim 2, wherein the first lens has a shape in which a lens having a circular outer shape is partially cut away. The substrate processing apparatus according to claim 2, wherein the first lens system is disposed adjacent to the beam splitter. The substrate processing apparatus according to claim 3, wherein the first lens system is disposed adjacent to the beam splitter. The substrate processing apparatus according to any one of claims 1 to 5, wherein the projection optical module has a second lens that enters the projection beam from the beam splitter; and the second lens is formed to have It is shaped in a shape corresponding to the second incident region through which the projection beam of the projection light incident on the substrate on the light-sensitive substrate passes. The substrate processing apparatus according to claim 6, wherein the second lens has a shape in which a lens having a circular outer shape is partially cut away. The substrate processing apparatus according to claim 6, wherein the second lens system is disposed adjacent to the beam splitter. The substrate processing apparatus according to claim 7, wherein the second lens system is disposed adjacent to the beam splitter. The substrate processing apparatus according to any one of claims 1 to 5, wherein the illumination optical system is provided in plurality, and the plurality of illumination opticals are provided corresponding to a plurality of illumination regions formed on the photomask And directing the illumination beam to the plurality of illumination regions; wherein the projection optical system is provided in plurality corresponding to the plurality of illumination optical systems, and the plurality of projection optical systems are to use the plurality of projections from the plurality of illumination regions The light beam is guided to a plurality of projection regions formed on the substrate; the plurality of illumination optical systems and the plurality of projection optical systems are arranged in two rows in a circumferential direction of the photomask; and the illumination optical system and the first row of the first row The projection optical system and the illumination optical system of the second row and the projection optical system of the second row are arranged symmetrically via a center plane passing through the first axis and the second axis. The substrate processing apparatus according to any one of claims 1 to 5, wherein the beam splitter-type polarization beam splitter further includes a wavelength plate provided between the polarization beam splitter and the photomask; The wavelength plate changes a polarization state of the illumination beam that is emitted from the polarizing beam splitter toward the reticle, and further changes a polarization state of the projection beam that is incident on the polarization beam splitter from the reticle. The substrate processing apparatus according to claim 11, wherein the polarizing beam splitter has a range of 52.4° to 57.3° in order to separate the incident illumination beam or the projection beam into a reflected beam or a transmitted beam according to a polarization state. The polarizing film of Brewster Point. The substrate processing apparatus according to claim 12, wherein the illumination beam is incident on the polarizing film of the polarizing beam splitter, and an incident angle is set to include the Brewster angle and the polarizing film. The reflectance of the reflected beam and the transmittance of the transmitted beam are in the range of 95% or more. The substrate processing apparatus according to any one of claims 1 to 5, wherein the illumination optical system comprises a lenticular lens, the lenticular lens being oriented from the beam splitter toward the photomask of the reticle The chief ray of the illumination beam is incident on a radial position of about 1/2 of the first radius of curvature from the first axis, and is in a state of being non-parallel to each other along the circumferential direction of the first circumferential surface. The substrate processing apparatus of claim 10, wherein the illumination optical system comprises a lenticular lens, wherein the lenticular lens has a chief ray of the illumination beam from the beam splitter toward the mask surface of the reticle The radial direction is about 1/2 of the first radius of curvature from the first axis, and is in a state of being non-parallel to each other along the circumferential direction of the first circumferential surface. The substrate processing apparatus according to any one of claims 1 to 5, wherein the directional characteristic of the illumination beam illuminating the reticle from the illumination optical system is set to be the projection beam reflected by the reticle The telecentric state in which the chief rays are parallel to each other. The substrate processing apparatus according to any one of claims 1 to 5, wherein the illumination beam is a laser. A component manufacturing system comprising: the substrate processing apparatus according to any one of claims 1 to 15; and a substrate supply apparatus that supplies the substrate to the substrate processing apparatus. A method of manufacturing a component, comprising: projecting an exposure of the substrate by using a substrate processing apparatus according to any one of claims 1 to 15; and patterning the reticle by processing the substrate exposed by projection The action of forming on the substrate. A substrate processing apparatus comprising: a mask holding member that holds a reflective mask; and a beam splitter that transmits an incident illumination beam to the mask, and the illumination beam is reflected by the mask The projection beam reflects; the illumination optical module causes the illumination beam to be incident on the beam splitter; and the projection optical module projects the projection beam reflected by the beam splitter onto the light-sensitive substrate; An illumination optical system for guiding the light beam to the reticle, comprising the illumination optical module and the beam splitter; and a projection optical system for guiding the projection light beam to the substrate, comprising the projection optical module and the beam splitter; and the illumination optical mode And the beam splitter is disposed between the photomask and the projection optical module; and further includes a substrate supporting member that supports the substrate by a supporting surface; the mask surface of the mask is centered on the first axis The first circumferential surface of the first curvature radius is formed; and the support surface of the substrate supporting member is along the second axis as the second curvature a second circumferential surface of the radius; the first axis is parallel to the second axis; and a central surface passing through the first axis and the second axis and a principal ray of the projection beam are on a first circumference of the mask surface When the angle of the circumferential direction of the surface is θ, the incident angle β of the chief ray of the illumination beam incident on the beam splitter is in the range of 45°×0.8≦β≦(45°+θ/2)×1.2. Inside. The substrate processing apparatus according to claim 20, wherein the illumination optical system includes an optical member that restricts an illumination region of the illuminating mask to a rectangular or rectangular shape; and the illumination optical module has the foregoing The illumination beam is directed to the first lens emitted from the beam splitter; and the first lens is formed to have a shape corresponding to a first incident region through which the illumination beam passes. The substrate processing apparatus according to claim 21, wherein the first lens has a shape in which a part of a lens having a circular outer shape is cut away. The substrate processing apparatus according to claim 21, wherein the first lens system is disposed adjacent to the beam splitter. The substrate processing apparatus according to claim 22, wherein the first lens system is disposed adjacent to the beam splitter. The substrate processing apparatus according to any one of claims 20 to 24, wherein the projection optical module has a second lens that enters the projection beam; and the second lens is formed to have a projection beam The second injection zone pair It should be shaped like a shape.