KR101900225B1 - Polarization beam splitter and exposure apparatus using the polarization beam splitter - Google Patents

Abstract

A mask holding drum 21 for holding a reflection type mask M and a reflecting mirror 21 for reflecting the incident illumination luminous flux EL1 toward the mask M while reflecting the illumination luminous flux EL1 by the mask M An illumination optical module ILM that allows the illumination luminous flux EL1 to be incident on the beam splitter PBS and a projection beam flux that has passed through the beam splitter PBS And a projection optical module (PLM) for projecting and exposing the projection optical module (EL2) onto the substrate (P), wherein the illumination optical module (ILM) and the beam splitter (PBS) Lt; / RTI > The polarizing film 93 includes a first film made of silicon dioxide and a second film made of hafnium oxide laminated in the film thickness direction, and the beam splitter PBS has a first prism, a second prism, and a polarizing film. do.

Description

TECHNICAL FIELD [0001] The present invention relates to a polarizing beam splitter and an exposure apparatus using the polarizing beam splitter.

The present invention relates to a polarizing beam splitter and an exposure apparatus using the polarizing beam splitter.

Conventionally, as a substrate processing apparatus, an exposure light is irradiated to a reticle (reticle) of a reflective cylindrical shape and an exposure light reflected from the mask is projected onto a photosensitive substrate (wafer) An exposure apparatus is known (see, for example, Patent Document 1). The exposure apparatus of Patent Document 1 has a projection optical system that projects exposure light reflected from a mask onto a wafer, and the projection optical system transmits exposure light in an imaging optical path in accordance with the polarization state of the incident light Or a polarizing beam splitter for reflecting or reflecting light.

Patent Document 1: Japanese Patent Application Laid-Open No. 2007-227438

In the exposure apparatus of Patent Document 1, the illumination luminous flux (luminous flux) from the illumination optical system is irradiated obliquely from the direction different from the projection optical system to the cylindrical mask image, and the exposure light (projection luminous flux) And enters the optical system. When the illumination optical system and the projection optical system are arranged as in Patent Document 1, there is a problem that the utilization efficiency of the illumination luminous flux is low and the quality of the mask pattern projected onto the photosensitive substrate (wafer) is not so preferable . As an illumination type that is efficient and maintains good quality, there is a coaxial drop illumination method. This is achieved by disposing a light splitting element such as a half mirror or a beam splitter in the imaging optical path by the projection optical system, irradiating the mask with the illumination light flux via the light splitting element, To the photosensitive substrate.

In the case of separating the illumination luminous flux facing the mask from the projection luminous flux from the mask by the naked eye illumination method, by using the polarizing beam splitter as the light splitting element, it is possible to efficiently expose the luminous flux and the projected luminous flux while suppressing the light amount loss to a low level .

However, when a polarized beam splitter, for example, reflects (or transmits) an illumination luminous flux and transmits (or reflects) the projected luminous flux, the polarizing beam splitter is shared in the illumination optical system and the projection optical system, There is a possibility that the projection optical system is physically interfered.

In the case of using a polarizing beam splitter in the exposure apparatus of Patent Document 1, the polarizing film of the polarizing beam splitter reflects a part of the incident incident light flux as a reflected light flux, and transmits a part thereof as a transmitted light flux. At this time, the reflected light flux or the transmitted light flux is separated, resulting in an energy loss. Therefore, it is preferable that the incident light flux incident on the polarizing film is a laser light whose wavelength and phase coincide with each other so as to suppress the energy loss of the reflected light flux or the transmitted light flux due to separation.

However, laser light has a high energy density. Therefore, when the incident light flux is laser light, the reflectance of the reflected light flux in the polarizing film and the transmittance of the transmitted light flux are low, the energy of the laser light is absorbed by the polarizing film and the load applied to the polarizing film becomes large. As a result, when light having a high energy density such as a laser beam is used as the incident light flux, the resistance of the polarizing film of the polarizing beam splitter tends to be lowered, so that it is likely that it is difficult to separate the incident light flux desirably.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a projection optical system that suppresses physical interference between an illumination optical system and a projection optical system, A substrate processing apparatus (exposure apparatus), a device manufacturing system, and a device manufacturing method capable of easily arranging a projection optical system.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide an optical system which can reduce a load applied to a polarizing film even when an incident light flux having a high energy density is reflected, A substrate processing apparatus, a device manufacturing system, and a device manufacturing method, which transmit a part of an incident light flux into a transmitted light flux.

According to a first aspect of the present invention, there is provided a prism comprising: a first prism; a second prism having a surface opposed to one surface of the first prism; and a second prism having an incident light flux (light flux) directed from the first prism to the second prism , And is arranged between the opposed surfaces of the first prism and the second prism so as to separate into a reflected light flux reflected to the first prism side or a transmitted light flux transmitted to the second prism side depending on the polarization state And a polarizing film in which a first film body containing silicon dioxide and a second film body containing hafnium oxide are laminated in the film thickness direction.

According to the second aspect of the present invention, there is provided a polarizing plate for separating ultraviolet light having a central wavelength? From the one optical prism to the other optical prism in the polarizing film in accordance with the polarization state, A beam splitter, wherein the polarizing film has a first film having a first refractive index greater than a refractive index of the optical prism at the wavelength? And a second film having a second refractive index smaller than the first refractive index at the wavelength? And a plurality of repeating layers laminated in the film thickness direction, wherein a Brewster's angle with respect to the ultraviolet light of the wavelength? Obtained by the polarizing film is 50 or more.

According to a third aspect of the present invention, there is provided an exposure apparatus using a polarizing beam splitter according to the first or second aspect of the present invention, comprising: a mask holding member for holding a reflection type mask; A projection optic module for projecting the projection luminous flux obtained by reflecting the illumination luminous flux to the mask onto a object, the illumination optic module comprising: a projection optic module between the illumination optic module and the mask, And the incident angle of the illumination luminous flux incident on the polarizing film of the polarizing beam splitter is within a predetermined angle range including a Brewster angle of 52.4 DEG to 57.3 DEG And the polarizing beam splitter reflects the illumination luminous flux toward the mask, and the polarizing beam splitter reflects the projection luminous flux To transmit toward the projection optics module group, the wave plate, the polarization Sikkim the illumination luminous flux from the polarization beam splitter as well, the exposure apparatus that further polarization the projection beam from the mask is provided.

According to a fourth aspect of the present invention, there is provided an exposure apparatus using a polarizing beam splitter according to the first or second aspect of the present invention, comprising: a mask holding member for holding a reflection type mask; A projection optic module for projecting the projection luminous flux obtained by reflecting the illumination luminous flux to the mask onto a object, the illumination optic module comprising: a projection optic module between the illumination optic module and the mask, And an incident angle of the projected luminous flux incident on the polarizing film of the polarizing beam splitter is within a predetermined angle range including a Brewster angle of 52.4 DEG to 57.3 DEG And the polarizing beam splitter transmits the illumination luminous flux toward the mask, and the polarized beam splitter transmits the projection luminous flux So as to reflect towards the projection optics module group, the wave plate, the polarization Sikkim the illumination luminous flux from the polarization beam splitter as well, the exposure apparatus that further polarization the projection beam from the mask is provided.

According to the aspect of the present invention, it is possible to suppress the physical interference of the illumination optical system and the projection optical system, and to reduce the illumination optical system and the projection optical system easily, even when the illumination light flux and the projected light flux are separated by the beam splitter shared in the illumination optical system and the projection optical system. And an exposure apparatus using the polarizing beam splitter can be provided.

According to the aspect of the present invention, there is provided a polarizing beam splitter for reducing a load applied to a polarizing film to reflect a part of an incident light flux into a reflected light flux, and transmitting a part of the incident light flux into a transmitted light flux, Can be provided.

1 is a diagram showing a configuration of a device manufacturing system according to the first embodiment.
2 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.
3 is a diagram showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig.
4 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in Fig.
FIG. 5A is a diagram showing illumination luminous flux and projected luminous flux in a mask. FIG.
5B is a view showing the fourth relay lens viewed from the polarization beam splitter.
6 is a diagram showing an illumination luminous flux and a projected luminous flux in a polarizing beam splitter.
Fig. 7 is a view showing an arrangement area in which the illumination optical system can be arranged. Fig.
8 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the first embodiment.
9 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the comparative example according to the first embodiment.
10 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig.
11 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig.
12 is a flowchart showing a device manufacturing method according to the first embodiment.
13 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the second embodiment.
14 is a diagram showing the configuration of an exposure apparatus (substrate processing apparatus) according to the third embodiment.
Fig. 15 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment.
16 is a diagram showing a configuration of an exposure apparatus (substrate processing apparatus) according to the fifth embodiment.
17 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the sixth embodiment.
18 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig.
19 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the seventh embodiment.
20 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig.
21 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the eighth embodiment.
22 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A mode (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments. Incidentally, the constituent elements described below include those that can be easily conceived by those skilled in the art, and substantially the same ones. In addition, the constituent elements described below can be suitably combined. In addition, various omissions, substitutions or alterations of the constituent elements can be made without departing from the gist of the present invention.

[First Embodiment]

The polarizing beam splitter of the first embodiment is provided in an exposure apparatus as a substrate processing apparatus that performs exposure processing on a photosensitive substrate which is a projected object. The exposure apparatus is assembled in a device manufacturing system that manufactures devices by performing various processes on the exposed substrate. First, a device manufacturing system will be described.

<Device Manufacturing System>

1 is a diagram showing a configuration of a device manufacturing system according to the first embodiment. The device manufacturing system 1 shown in Fig. 1 is a line (flexible display manufacturing line) for manufacturing a flexible display as a device. The flexible display includes, for example, an organic EL display. This device manufacturing system 1 is a device manufacturing system 1 in which various processes are continuously carried out on a fed substrate P from a feed roll FR1 on which a flexible substrate P is wound in the form of a roll, Roll-to-roll system in which the processed substrate P is wound as a flexible device on the recovery roll FR2. In the device manufacturing system 1 of the first embodiment, the substrate P, which is a film-like sheet, is fed from the feed roll FR1 and the substrate P fed out from the feed roll FR1 is fed sequentially , until they are wound on the rotating roll FR2 via n processing devices U1, U2, U3, U4, U5, ..., Un. First, the substrate P to be processed by the device manufacturing system 1 will be described.

As the substrate P, for example, a resin (resin) film, a foil made of a metal such as stainless steel or an alloy, or the like is used. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, And one or more of vinyl acetate resin.

It is preferable that the substrate P be selected so as not to have a significantly large thermal expansion coefficient so as to substantially neglect the deformation amount due to heat which is subjected to various treatments to be performed on the substrate P. For example, The thermal expansion coefficient may be set to be smaller than a threshold value according to the process temperature or the like, for example, by mixing an inorganic filler with a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide, or the like. Further, the substrate P may be a very thin glass single layer having a thickness of about 100 占 퐉 manufactured by a float method or the like, and a laminate obtained by bonding the above resin film, foil or the like to the extremely thin glass good.

The substrate P thus configured is rolled into a roll to become a supply roll FR1 and this supply roll FR1 is mounted in the device manufacturing system 1. [ The device manufacturing system 1 equipped with the supply roll FR1 repeatedly executes various processes for manufacturing the device on the substrate P fed out from the feed roll FR1. Therefore, the substrate P after processing becomes a state in which a plurality of devices are connected. That is, the substrate P to be fed out from the supply roll FR1 is a substrate for obtaining multiple faces. The substrate P may be obtained by modifying the surface of the substrate P by a predetermined pretreatment beforehand or by activating the substrate P by forming a fine partition structure (concave-convex structure) for precision patterning on the surface It's okay.

The substrate P after the treatment is recovered as the recovery roll FR2 by being wound in a roll shape. The rotating roll FR2 is mounted on a dicing device (not shown). The dicing apparatus to which the rotation roll FR2 is mounted divides (dices) the processed substrate P for each device to obtain a plurality of devices. The dimension of the substrate P is, for example, about 10 cm to 2 m in the width direction (the short direction) and the dimension in the length direction (long direction) is 10 m or more . The dimensions of the substrate P are not limited to the above dimensions.

With reference to Fig. 1, a device manufacturing system will be described next. In Fig. 1, the coordinate system is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal. The X direction is a direction connecting the supply roll FR1 and the recovery roll FR2 in the horizontal plane. The Y direction is a direction orthogonal to the X direction within the horizontal plane. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is a direction orthogonal to the X direction and the Y direction (vertical direction).

The device manufacturing system 1 includes a substrate supply device 2 for supplying a substrate P and processing devices U1 to Un for performing various processes on the substrate P supplied by the substrate supply device 2, A substrate collecting device 4 for collecting a substrate P processed by the processing devices U1 to Un and an upper control device for controlling each device of the device manufacturing system 1 5).

In the substrate feeder 2, a feed roll FR1 is rotatably mounted. The substrate feeder 2 includes a drive roller R1 for feeding the substrate P from the mounted supply roll FR1 and a drive roller R1 for moving the substrate P in the width direction (Y direction) Controller EPC1. The driving roller R1 rotates while sandwiching the both sides of the front and back sides of the substrate P and sends out the substrate P in the carrying direction from the supplying roll FR1 to the rotating roll FR2, (P) to the processing units U1 to Un. At this time, the edge position controller EPC1 controls the width W of the substrate P so that the position of the edge of the substrate P in the width direction is in the range of about 占 퐉 to about 占 퐉 relative to the target position. To correct the position of the substrate P in the width direction.

In the substrate collection apparatus 4, a rotation roll FR2 is rotatably mounted. The substrate recovery apparatus 4 includes a drive roller R2 for pulling the processed substrate P toward the recovery roller FR2 and an edge position Controller EPC2. The substrate recovery apparatus 4 rotates while sandwiching both the front and back surfaces of the substrate P by the drive roller R2 so as to pull the substrate P in the transport direction, The substrate P is wound up. At this time, the edge position controller EPC2 is constructed in the same manner as the edge position controller EPC1, and the edge position controller EPC2 is arranged in the width direction of the substrate P so that the width direction edge of the substrate P does not deviate in the width direction. .

The processing apparatus U1 is a coating apparatus for applying a photosensitive (photosensitive) functional liquid to the surface of the substrate P supplied from the substrate supply apparatus 2. [ As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material, a UV curable resin liquid, or the like is used. The processing apparatus U1 is provided with a dispensing mechanism Gp1 and a drying mechanism Gp2 in this order from the upstream side in the carrying direction of the substrate P. [ The application mechanism Gp1 has a cylinder roller DR1 on which the substrate P is wound and an application roller DR2 opposed to the cylinder roller DR1. The coating mechanism Gp1 holds the substrate P sandwiched by the cylinder roller DR1 and the application roller DR2 while the supplied substrate P is wound around the cylinder roller DR1. The application mechanism Gp1 applies the photosensitive functional liquid by the application roller DR2 while rotating the cylinder roller DR1 and the application roller DR2 while moving the substrate P in the transport direction. The drying mechanism Gp2 blows air for drying such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid and to dry the substrate P coated with the photosensitive functional liquid, A photosensitive functional layer is formed on the upper surface (P).

The processing device U2 is a device for transferring the substrate P conveyed from the processing device U1 to a predetermined temperature (for example, several tens to 120 degrees Celsius) so as to stabilize the photosensitive functional layer formed on the surface of the substrate P, . The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the carrying direction of the substrate P. [ In the heating chamber HA1, a plurality of rollers and a plurality of air-turn bars are provided, and a plurality of rollers and a plurality of air-turn bars constitute a conveying path of the substrate P. The plurality of rollers are provided in a rolling contact with the back surface of the substrate P, and the plurality of air / turn bars are provided in a non-contact state on the surface side of the substrate P. The plurality of rollers and the plurality of air / turn bars are arranged in a meandering (twisted) shape transport path so as to lengthen the transport path of the substrate P. The substrate P passing through the heating chamber HA1 is heated to a predetermined temperature while being conveyed along a serpentine conveying path. The cooling chamber HA2 cools the substrate P to the ambient temperature so that the temperature of the substrate P heated in the heating chamber HA1 coincides with the environmental temperature of the subsequent process (processing device U3). Like the heating chamber HA1, the cooling chamber HA2 is provided with a plurality of rollers therein, and the plurality of rollers are arranged such that the conveying path of the substrate P is long, . The substrate P passing through the inside of the cooling chamber HA2 is cooled while being conveyed along a serpentine conveyance path. A drive roller R3 is provided on the downstream side in the transport direction of the cooling chamber HA2 and the drive roller R3 rotates while sandwiching the substrate P passing through the cooling chamber HA2, And the substrate P is supplied toward the processing unit U3.

The processing apparatus (substrate processing apparatus) U3 projects a pattern such as a circuit for display or wiring on a substrate (photosensitive substrate) P provided with a photosensitive functional layer on its surface supplied from the processing apparatus U2 And is a scanning type exposure apparatus for exposing the wafer to light. The processing apparatus U3 illuminates the reflecting type cylindrical mask M with an illumination luminous flux and outputs the projection luminous flux obtained by reflecting the illumination luminous flux by the mask M to the rotatable substrate support drum (P) supported on the outer peripheral surface of the substrate (25). The processing apparatus U3 includes a driving roller R4 for feeding the substrate P supplied from the processing apparatus U2 to the downstream side in the carrying direction and a driving roller R4 for adjusting the position in the width direction And an edge position controller (EPC3). The driving roller R4 rotates while sandwiching the both sides of the front and back sides of the substrate P and feeds the substrate P toward the exposure position by feeding the substrate P to the downstream side in the carrying direction. The edge position controller EPC3 is constructed in the same manner as the edge position controller EPC1 and corrects the position in the width direction of the substrate P so that the width direction of the substrate P at the exposure position becomes the target position .

The processing unit U3 has two pairs of driving rollers R5 and R6 for feeding the substrate P to the downstream side in the carrying direction in a state in which the substrate P after sagging is given a slack. The two sets of driving rollers R5 and R6 are arranged at a predetermined interval in the conveying direction of the substrate P. [ The drive roller R5 rotates while sandwiching the upstream side of the substrate P to be transported and the drive roller R6 rotates while sandwiching the downstream side of the substrate P to be transported, And supplies the substrate P toward the processing unit U4. At this time, since the substrate P is slackened, it is possible to absorb the fluctuation of the conveying speed occurring on the downstream side in the conveying direction with respect to the driving roller R6, It is possible to insulate the influence of the exposure process. In order to relatively align (align) the substrate P with a part of the mask pattern of the mask M, alignment marks or the like previously formed on the substrate P are formed in the processing apparatus U3 The alignment microscopes AM1 and AM2 are provided.

The processing apparatus U4 is a wet processing apparatus for carrying out a development processing (current image processing) by wet processing, electroless plating processing, and the like on the post-exposure substrate P conveyed from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, and BT3 layered in the vertical direction (Z direction) and a plurality of rollers for transporting the substrate P in the processing apparatus U4. The plurality of rollers are disposed so as to be the conveying paths through which the substrates P pass through the inside of the three treatment tanks BT1, BT2, and BT3 in order. A drive roller R7 is provided on the downstream side of the treatment tank BT3 in the transport direction and the drive roller R7 rotates while sandwiching the substrate P passing through the treatment tank BT3, And the substrate P is supplied toward the processing unit U5.

Although not shown, the processing apparatus U5 is a drying apparatus for drying the substrate P carried from the processing apparatus U4. The processing apparatus U5 adjusts the water content adhering to the substrate P subjected to the wet processing in the processing apparatus U4 to a predetermined water content. The substrate P dried by the processing unit U5 is conveyed to the processing unit Un via several processing units. Then, after being processed in the processing unit Un, the substrate P is wound up on the recovery roll FR2 of the substrate recovery apparatus 4. [

The upper control device 5 collectively controls the substrate feeding device 2, the substrate collecting device 4 and the plurality of processing devices U1 to Un. The upper control apparatus 5 controls the substrate supply apparatus 2 and the substrate collection apparatus 4 to transport the substrate P from the substrate supply apparatus 2 to the substrate collection apparatus 4. [ The upper control device 5 controls the plurality of processing devices U1 to Un while synchronizing with the conveyance of the substrate P to execute various processes on the substrate P. [

&Lt; Exposure Apparatus (Substrate Processing Apparatus) &gt;

Next, the configuration of an exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to Figs. 2 to 7. Fig. 2 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. 3 is a diagram showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 4 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in Fig. FIG. 5A is a diagram showing illumination luminous flux and projected luminous flux in a mask. FIG. 5B is a view showing the fourth relay lens viewed from the polarization beam splitter. 6 is a diagram showing an illumination luminous flux and a projected luminous flux in a polarizing beam splitter. Fig. 7 is a view showing an arrangement area in which the illumination optical system can be arranged. Fig.

The exposure apparatus U3 shown in Fig. 2 is a so-called scanning exposure apparatus and is a so-called scanning exposure apparatus which forms an image of a mask pattern formed on the outer peripheral surface of a cylindrical mask M while conveying the substrate P in the conveying direction Is projected and exposed on the surface of the substrate (P). In Figs. 2 and 4 to 7, an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal is used, and the orthogonal coordinate system is the same as that in Fig.

First, the mask M used in the exposure apparatus U3 will be described. The mask M is, for example, a reflection type cylindrical mask using a metal cylindrical body. The mask M is formed as a cylindrical body having an outer circumferential surface (circumferential surface) having a radius of curvature Rm around the first axis AX1 extending in the Y direction, and has a constant thickness in the radial direction. The circumferential surface of the mask M is a mask surface P1 on which a predetermined mask pattern is formed. The mask surface P1 includes an antireflection portion that reflects the light flux in a predetermined direction with high efficiency and a reflection suppressing portion (or light absorption portion) that does not reflect the light flux in a predetermined direction or reflects the light flux with low efficiency, Is formed by the high reflection portion and the reflection suppressing portion. Since the mask M is a cylindrical body made of metal, it can be manufactured at low cost.

The mask M may be formed to have all or part of the panel pattern corresponding to one display device, or to obtain a surface on which a panel pattern corresponding to a plurality of display devices is formed. A plurality of patterns for the panel may be repeatedly formed on the mask M in the circumferential direction around the first axis AX1 and the small pattern for the panel is repeated in the direction parallel to the first axis AX1 It is also possible to form a plurality thereof. In addition, the mask M may be formed with a pattern for a panel of the first display device and a pattern for a panel of the second display device having a different size from the first display device. The mask M may have a circumferential surface having a radius of curvature Rm around the first axis AX1 and is not limited to a cylindrical shape. For example, the mask M may be an arc-shaped plate having a circumferential surface. The mask M may be in the form of a thin plate, or it may be attached to a cylindrical base material or a cylindrical frame so that the thin plate-shaped mask M is curved and has a circumferential surface.

Next, the exposure apparatus U3 shown in Fig. 2 will be described. The exposure apparatus U3 is provided with a mask holding mechanism 11, a substrate holding mechanism 12, a light source (not shown), and the like, in addition to the driving rollers R4 to R6, the edge position controller EPC3 and the alignment microscopes AM1 and AM2. An optical system IL, a projection optical system PL, and a lower control device 16. The exposure apparatus U3 guides the illumination luminous flux EL1 emitted from the light source device 13 through the illumination optical system IL and the projection optical system PL to the mask M To the substrate P supported by the substrate holding mechanism 12. The substrate P is held by the substrate holding mechanism 12,

The subordinate control device 16 controls each section of the exposure apparatus U3 and causes each section to execute processing. The lower control device 16 may be part or all of the upper control device 5 of the device manufacturing system 1. [ The lower control device 16 may be a device controlled by the higher control device 5 and different from the upper control device 5. [ The subordinate control device 16 includes, for example, a computer.

The mask holding mechanism 11 has a mask holding drum 21 (mask holding member) for holding the mask M and a first driving section 22 for rotating the mask holding drum 21. The mask holding drum 21 holds the mask M such that the first axis AX1 of the mask M is the center of rotation. The first driving part 22 is connected to the lower control device 16 and rotates the mask holding drum 21 around the first axis AX1 as a rotation center.

In the mask holding mechanism 11, the mask M of the cylindrical body is held by the mask holding drum 21, but it is not limited to this configuration. The mask holding mechanism 11 may hold and hold a thin plate-shaped mask M along the outer circumferential surface of the mask holding drum 21. The mask holding mechanism 11 may hold the mask M, which is an arc-shaped plate material, on the outer peripheral surface of the mask holding drum 21.

The substrate supporting mechanism 12 includes a cylindrical substrate supporting drum (substrate supporting member) 25 for supporting the substrate P, a second driving part 26 for rotating the substrate supporting drum 25, The air / turn bars ATB1 and ATB2, and a pair of guide rollers 27 and 28, respectively. The substrate supporting drum 25 is formed into a cylindrical shape having an outer circumferential surface (circumferential surface) having a radius of curvature Rfa centered on a second axis AX2 extending in the Y direction. The first axis AX1 and the second axis AX2 are parallel to each other and the plane passing through the first axis AX1 and the second axis AX2 is the center plane CL. A part of the circumferential surface of the substrate supporting drum 25 is a supporting surface P2 for supporting the substrate P. [ That is, the substrate supporting drum 25 supports the substrate P by winding the substrate P on the supporting surface P2. The second driving part 26 is connected to the lower control device 16 and rotates the substrate supporting drum 25 about the second axis AX2 as a rotation center. A pair of air turn bars ATB1 and ATB2 are provided on the upstream side and the downstream side of the substrate P in the carrying direction with the substrate supporting drum 25 therebetween. The pair of air turn bars ATB1 and ATB2 are provided on the front surface side of the substrate P and are disposed on the lower side of the support surface P2 of the substrate supporting drum 25 in the vertical direction (Z direction) . The pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side of the substrate P in the carrying direction with a pair of air / turn bars ATB1 and ATB2 interposed therebetween. The pair of guide rollers 27 and 28 guide the substrate P conveyed from the driving roller R4 by one of the guide rollers 27 to the air turn bar ATB1, 28 guides the substrate P conveyed from the air / turn bar ATB2 to the drive roller R5.

The substrate supporting mechanism 12 guides the substrate P conveyed from the driving roller R4 to the air turn bar ATB1 by the guide roller 27 and then passes through the air turn bar ATB1 The substrate P is introduced (introduced) into the substrate supporting drum 25. The substrate supporting mechanism 12 rotates the substrate supporting drum 25 by the second driving unit 26 to rotate the substrate P introduced into the substrate supporting drum 25 toward the supporting surface of the substrate supporting drum 25. [ And is conveyed toward the air / turn bar ATB2 while being supported by the air passage P2. The substrate support mechanism 12 guides the substrate P conveyed by the air / turn bar ATB2 to the guide roller 28 by the air / turn bar ATB2, P to the drive roller R5.

At this time, the lower control device 16 connected to the first driving part 22 and the second driving part 26 is configured to synchronously rotate the mask holding drum 21 and the substrate supporting drum 25 at a predetermined rotation speed ratio The image of the mask pattern formed on the mask surface P1 of the mask M is formed on the surface of the substrate P wound around the support surface P2 of the substrate support drum 25 (I.e., one surface).

The light source device 13 emits the illumination luminous flux EL1 illuminated to the mask M. [ The light source device 13 has a light source 31 and a light guiding member 32. The light source 31 is a light source that emits light of a predetermined wavelength that gives a chemical action to the photosensitive layer formed on the surface of the substrate P. [ As the light source 31, for example, a lamp light source such as a mercury lamp or a laser diode, a light emitting diode (LED), or the like is used. The illumination light emitted by the light source 31 may be, for example, a bright line (g line, h line or i line) emitted from a lamp light source, an infrared light (DUV light) such as KrF excimer laser light (wavelength 248 nm), an ArF excimer laser (Wavelength: 193 nm). Here, it is preferable that the light source 31 emits an illumination luminous flux EL1 including a wavelength equal to or less than an i-line (wavelength of 365 nm). a third harmonic laser of YAG for emitting a laser beam having a wavelength of 355 nm, a fourth harmonic laser of YAG for emitting a laser beam having a wavelength of 266 nm, , Or a KrF excimer laser that emits a laser beam having a wavelength of 248 nm.

Here, the illumination luminous flux EL1 emitted from the light source device 13 is incident on the polarizing beam splitter PBS described later. The illumination luminous flux EL1 is a luminous flux of the illumination luminous flux EL1 which is incident on the polarization beam splitter PBS so as to suppress energy loss due to separation of the luminous flux EL1 by the polarization beam splitter PBS, It is preferable to set the speed of light. The polarizing beam splitter PBS reflects a light flux that becomes linearly polarized light of S polarized light and transmits the light flux that becomes linearly polarized light of P polarized light. Therefore, the light source device 13 emits the illumination luminous flux EL1 in which the illumination luminous flux EL1 incident on the polarization beam splitter PBS becomes a luminous flux of linearly polarized light (S polarized light). Therefore, the light source device 13 emits the polarized laser beam whose wavelength and phase agree with the polarization beam splitter PBS.

The light guiding member 32 guides the illumination luminous flux EL1 emitted from the light source 31 to the illumination optical system IL. The light guiding member 32 is composed of an optical fiber or a relay module using a mirror or the like. The light guiding member 32 separates the illumination luminous flux EL1 from the light source 31 into a plurality of illumination luminous fluxes EL1 in a plurality of illumination optical systems IL). The light guide member 32 uses a polarization maintaining fiber (polarization maintaining fiber) as the optical fiber when the light flux emitted from the light source 31 is polarized laser light, for example, It is also possible to conduct the light while maintaining the polarization state of the polarized laser light by the polarization maintaining fiber.

Here, as shown in Fig. 3, the exposure apparatus U3 of the first embodiment is an exposure apparatus that assumes a so-called multi-lens system. 3 shows a plan view (left side view in Fig. 3) of the illumination area IR on the cylindrical mask M held on the mask holding drum 21 viewed from the -Z side, (The right side view in Fig. 3) of the projection area PA on the substrate P supported by the projection optical system 25 from the + Z side. Symbol Xs in Fig. 3 represents the moving direction (rotational direction) of the mask holding drum 21 and the substrate supporting drum 25. [ The multi-lens type exposure apparatus U3 illuminates the illumination luminous flux EL1 to a plurality of illumination regions IR1 to IR6 (for example, six in the first embodiment) on the mask M And a plurality of projected luminous fluxes EL2 obtained by reflecting each illumination luminous flux EL1 on each of the illumination areas IR1 to IR6 is projected onto a plurality of projections (for example, six projections on the substrate P) And projects and exposes the regions PA1 to PA6.

First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in Fig. 3, the plurality of illumination regions IR1 to IR6 are arranged in two rows in the rotational direction with the center plane CL sandwiched therebetween, and are arranged on the mask M on the upstream side in the rotational direction The odd-numbered first illumination region IR1, the third illumination region IR3 and the fifth illumination region IR5 are arranged, and on the mask M on the downstream side in the rotation direction, An illumination region IR2, a fourth illumination region IR4, and a sixth illumination region IR6. Each of the illumination regions IR1 to IR6 has a parallel long side extending in the axial direction (Y direction) of the mask M and an elongated trapezoidal (rectangular) region having a long side. At this time, each of the trapezoidal illumination regions IR1 to IR6 has its short side located on the center plane CL side and its long side located on the outer side. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. The second illumination area IR2, the fourth illumination area IR4 and the sixth illumination area IR6 are arranged at predetermined intervals in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Likewise, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is arranged between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. Each of the illumination regions IR1 to IR6 is arranged such that the triangular portions of the oblique side portions of the trapezoidal illumination regions IR adjacent to each other overlap with each other when viewed from the circumferential direction of the mask M have. In the first embodiment, each of the illumination areas IR1 to IR6 is a trapezoidal area, but may be a rectangular area.

The mask M has a pattern formation area A3 in which a mask pattern is formed and a pattern non-formation area A4 in which no mask pattern is formed. The pattern non-formation area A4 is an area which is difficult to reflect, which absorbs the illumination light flux EL1, and is arranged so as to surround the pattern formation area A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged so as to cover the entire width of the pattern formation region A3 in the Y direction.

The illumination optical system IL is provided with a plurality of (six in the first embodiment, for example) according to the plurality of illumination regions IR1 to IR6. The illumination luminous flux EL1 from the light source device 13 is respectively incident on the plurality of illumination optical systems IL1 to IL6. Each of the illumination optical systems IL1 to IL6 guides each illumination luminous flux EL1 incident from the light source device 13 to each of the illumination areas IR1 to IR6. That is, the first illumination optical system IL1 guides the illumination luminous flux EL1 to the first illumination area IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination luminous flux EL1 To the second to sixth illumination regions IR2 to IR6. The plurality of illumination optical systems IL1 to IL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL therebetween. The plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third and fifth illumination regions IR1, IR3 and IR5 are arranged (left side in Fig. 2) with the center plane CL therebetween, The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. The plurality of illumination optical systems IL1 to IL6 are arranged on the side where the second, fourth and sixth illumination regions IR2, IR4 and IR6 are disposed (the right side in Fig. 2) with the center plane CL therebetween, The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3 is disposed between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction. The fourth illumination optical system IL4 is disposed in the axial direction between the third illumination optical system IL3 and the fifth illumination optical system IL5. The fifth illumination optical system IL5 is disposed between the fourth illumination optical system IL4 and the sixth illumination optical system IL6 in the axial direction. The first illumination optical system IL1, the third illumination optical system IL3 and the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4 and the sixth illumination optical system IL6, Are arranged symmetrically with respect to the center plane CL as viewed from the Y direction.

Next, the respective illumination optical systems IL1 to IL6 will be described with reference to Fig. Since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter, simply referred to as 'illumination optical system IL') will be described as an example.

The illumination optical system IL applies the Koehler illumination method so that the illumination luminous flux EL1 that illuminates the illumination area IR (the first illumination area IR1) has a uniform illumination distribution. The illumination optical system IL is a fall illumination system using a polarization beam splitter (PBS). The illumination optical system IL includes an illumination optical module ILM, a polarization beam splitter PBS, a quarter wave plate (a wave plate (light source) (41).

As shown in Fig. 4, the illumination optical module ILM includes a collimator lens 51, a flyeye lens 52, and a plurality of condenser lenses (in this order) from the incident side of the illumination luminous flux EL1 53, a cylindrical lens 54, an illumination field stop 55, and a plurality of relay lenses 56, and is provided on the first optical axis BX1. The collimator lens 51 is provided on the emission side of the light guide member 32 of the light source device 13. [ The optical axis of the collimator lens 51 is arranged on the first optical axis BX1. The collimator lens 51 irradiates the entire surface on the incidence side of the fly-eye lens 52. The fly-eye lens 52 is provided on the emission side of the collimator lens 51. The center of the exit-side surface of the fly-eye lens 52 is disposed on the first optical axis BX1. The fly-eye lens 52 divides the illumination luminous flux EL1 from the collimator lens 51 into luminous flux diverging from each of a plurality of point light source images (point light original images). The plane of the exit side of the fly's eye lens 52 from which the point light source image is generated is transmitted from the fly's eye lens 52 through the illumination field stop 55 to the first concave mirror (not shown) of the projection optical system PL 72 are arranged so as to be optically conjugate with the pupil plane where the reflection surface of the first concave mirror 72 is located.

The condenser lens 53 is provided on the emission side of the fly-eye lens 52. The optical axis of the condenser lens 53 is arranged on the first optical axis BX1. The condenser lens 53 superposes each of the illumination luminous fluxes EL1 divided by the fly's eye lens 52 on the illumination field stop 55 via the cylindrical lens 54. [ Thereby, the illumination luminous flux EL1 becomes uniform illuminance distribution on the illumination field stop 55. The cylindrical lens 54 is a flat convex cylindrical lens whose incident side is flat and the outgoing side is convex. The cylindrical lens 54 is provided on the output side of the condenser lens 53. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1.

The cylindrical lens 54 converges the principal ray of the illumination luminous flux EL1 in the direction orthogonal to the first optical axis BX1 in the XZ plane in Fig. The cylindrical lens 54 is provided adjacent to the incidence side of the illumination field stop 55. The opening of the illumination field stop 55 is formed in a rectangular shape such as a trapezoid or a rectangle having the same shape as that of the illumination area IR and the center of the opening of the illumination field stop 55 is the first optical axis BX1 As shown in Fig. At this time, the illumination field stop 55 is arranged on the surface optically conjugate with the illumination area IR on the mask M by various lenses from the illumination field stop 55 to the mask M . The relay lens 56 is provided on the emission side of the illumination field stop 55. The optical axis of the relay lens 56 is disposed on the first optical axis BX1. The relay lens 56 causes the illumination luminous flux EL1 from the illumination field stop 55 to enter the polarization beam splitter PBS.

When the illumination luminous flux EL1 enters the illumination optical module ILM, the illumination luminous flux EL1 becomes a luminous flux that illuminates the entire surface of the fly-eye lens 52 on the incidence side by the collimator lens 51. [ The illumination luminous flux EL1 incident on the fly's eye lens 52 becomes the illumination luminous flux EL1 divided into a plurality of point light sources and enters the cylindrical lens 54 through the condenser lens 53. [ The illumination luminous flux EL1 incident on the cylindrical lens 54 converges in a direction orthogonal to the first optical axis BX1 in the XZ plane. The illumination luminous flux EL1 that has passed through the cylindrical lens 54 enters the illumination field stop 55. The illumination luminous flux EL1 incident on the illumination field stop 55 passes through an opening portion (a rectangular shape such as a trapezoid or a rectangle) of the illumination field stop 55 and passes through the relay lens 56 to the polarizing beam splitter PBS. .

The polarizing beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL. The polarization beam splitter PBS reflects the illumination luminous flux EL1 from the illumination optical module ILM and transmits the projection luminous flux EL2 reflected by the mask M. [ That is, by making the illumination luminous flux EL1 from the illumination optical module ILM into linearly polarized light of S polarized light, the projected luminous flux EL2 incident on the polarized beam splitter PBS is converted into the S polarized light by the action of the 1/4 wave plate 41 And becomes linearly polarized light of P polarized light, and is transmitted through the polarizing beam splitter PBS.

6, the polarizing beam splitter PBS includes a first prism 91, a second prism 92, a first prism 91, and a second prism 92. The polarizing beam splitter PBS includes a first prism 91, a second prism 92, And a polarizing film (wavefront dividing surface) 93 provided between the first prism 91 and the second prism 92. The first prism 91 and the second prism 92 are made of quartz glass and are triangular prisms in the XZ plane. The polarizing beam splitter PBS is formed into a rectangular shape in the XZ plane by bonding the first prism 91 and the second prism 92 of triangular shape sandwiching the polarizing film 93 therebetween.

The first prism 91 is a prism on the side where the illumination luminous flux EL1 and the projected luminous flux EL2 are incident. The second prism 92 is a prism on the side from which the projected luminous flux EL2 transmitted through the polarizing film 93 is emitted. An illumination luminous flux EL1 from the first prism 91 to the second prism 92 is incident on the polarizing film 93. [ The polarizing film 93 reflects the illumination luminous flux EL1 of S polarized light (linearly polarized light) and transmits the projected luminous flux EL2 of P polarized light (linearly polarized light).

It is preferable that the polarization beam splitter PBS reflects most of the illumination luminous flux EL1 reaching the polarizing film (wavefront splitting surface) 93 and transmits most of the projected luminous flux EL2. Although the polarized light separating property of the polarizing beam splitter (PBS) is represented by the extinction ratio, the extinction ratio also varies depending on the angle of incidence of the light beam directed to the wavefront dividing surface. Therefore, The numerical aperture (NA) of the illumination luminous flux EL1 and the projected luminous flux EL2 are also designed in consideration of the influence on the image formation performance on the image.

The quarter wave plate 41 is disposed between the polarizing beam splitter PBS and the mask M. [ The 1/4 wave plate 41 converts the illumination luminous flux EL1 reflected by the polarization beam splitter PBS from linearly polarized light (S polarized light) to circularly polarized light. The light (circularly polarized light) reflected by the mask M by the irradiation of the illumination luminous flux EL1 of the circularly polarized light is converted into the projected luminous flux EL2 of P polarized light (linearly polarized light) by the 1/4 wave plate 41 do.

5A shows the behavior of the illumination luminous flux EL1 irradiated on the illumination area IR on the mask M and the projected luminous flux EL2 reflected on the illumination area IR on the XZ plane (The plane perpendicular to the first axis AX1). 5A, the illumination optical system IL is configured so that the principal ray of the projected luminous flux EL2 reflected by the illumination area IR of the mask M becomes telecentric (parallel system) , The principal ray of the illumination luminous flux EL1 irradiated onto the illumination area IR of the mask M is intentionally brought into a non-telecentric state in the XZ plane (plane perpendicular to the first axis AX1) , And is in a telecentric state in the YZ plane (parallel to the center plane CL). Such a characteristic of the illumination luminous flux EL1 is given by the cylindrical lens 54 shown in Fig. More specifically, a line passing through a point Q1 at the center in the circumferential direction of the illumination area IR on the mask surface P1 and directed to the first axis AX1, The principal ray of the illumination luminous flux EL1 passing through the illumination area IR is directed to the intersection Q2 on the XZ plane, The curvature of the convex cylindrical lens surface of the convex lens 54 is set. In this way, each principal ray of the projected luminous flux EL2 reflected in the illumination area IR is parallel to a straight line passing through the first axis AX1, the point Q1, and the intersection Q2 in the XZ plane (Telecentric) state.

Next, a plurality of projection areas PA1 to PA6 to be projected and exposed by the projection optical system PL will be described. 3, a plurality of projection areas PA1 to PA6 on the substrate P are arranged so as to correspond to a plurality of illumination areas IR1 to IR6 on the mask M have. In other words, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in two rows in the transport direction with the center plane CL therebetween, and the substrate P on the upstream side in the transport direction Numbered first projection area PA1, a third projection area PA3 and a fifth projection area PA5 are disposed on the substrate P on the downstream side in the carrying direction, Th second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged. Each of the projection areas PA1 to PA6 has an elongated trapezoidal shape (rectangular shape) having a short side extending in the width direction (Y direction) of the substrate P and a long side. At this time, each of the projection areas PA1 to PA6 in the trapezoidal shape is located on the side of the center plane CL with its short side being located on the outer side. The first projection area PA1, the third projection area PA3 and the fifth projection area PA5 are arranged at a predetermined interval in the width direction. The second projection area PA2, the fourth projection area PA4 and the sixth projection area PA6 are arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is disposed between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is disposed between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is disposed between the third projection area PA3 and the fifth projection area PA5. The fifth projection area PA5 is disposed between the fourth projection area PA4 and the sixth projection area PA6. The projection areas PA1 to PA6 are arranged such that the triangular portions of the oblique projection portions of the trapezoidal projection area PA adjacent to each other are overlapped with each other as viewed from the conveying direction of the substrate P as in each of the illumination areas IR1 to IR6 Overlap). At this time, the projection area PA has such a shape that the exposure amount in the overlapping areas of the adjacent projection areas PA is substantially equal to the exposure amount in the overlapping areas. The first to sixth projection areas PA1 to PA6 are arranged so as to cover the entire width of the exposure area A7 exposed on the substrate P in the Y direction.

2, the circumferential length from the center point of the illumination region IR1 (and IR3, IR5) on the mask M to the center point of the illumination region IR2 (and IR4, IR6), as viewed in the XZ plane, The peripheral length from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the projection area PA2 (and PA4, PA6) And are set substantially the same.

The projection optical system PL is provided with a plurality of (six in the first embodiment, for example) according to the plurality of projection areas PA1 to PA6. A plurality of projection luminous fluxes EL2 reflected from the plurality of illumination regions IR1 to IR6 respectively enter the plurality of projection optical systems PL1 to PL6. Each of the projection optical systems PL1 to PL6 guides each of the projected luminous fluxes EL2 reflected by the mask M to the respective projection areas PA1 to PA6. That is, the first projection optical system PL1 guides the projected luminous flux EL2 from the first illumination area IR1 to the first projection area PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 ) Guides the respective projected luminous fluxes EL2 from the second to sixth illumination areas IR2 to IR6 to the second to sixth projection areas PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL therebetween. The plurality of projection optical systems PL1 to PL6 are arranged on the side where the first, third and fifth projection areas PA1, PA3 and PA5 are disposed (left side in Fig. 2) with the center plane CL therebetween, A first projection optical system PL1, a third projection optical system PL3, and a fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. The plurality of projection optical systems PL1 to PL6 are arranged on the side on which the second, fourth and sixth projection areas PA2, PA4 and PA6 are arranged (right side in Fig. 2) with the center plane CL therebetween, A second projection optical system PL2, a fourth projection optical system PL4, and a sixth projection optical system PL6 are arranged. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3 is disposed between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction. The fourth projection optical system PL4 is disposed between the third projection optical system PL3 and the fifth projection optical system PL5. The fifth projection optical system PL5 is disposed between the fourth projection optical system PL4 and the sixth projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4 and the sixth projection optical system PL6 constitute a first projection optical system PL1, a third projection optical system PL3 and a fifth projection optical system PL5, Are arranged symmetrically with respect to the center plane CL as viewed from the Y direction.

Referring again to Fig. 4, the respective projection optical systems PL1 to PL6 will be described. Since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter, simply referred to as a 'projection optical system PL') will be described as an example.

The projection optical system PL is configured to project an image of the mask pattern in the illumination region IR (first illumination region IR1) on the mask M onto the And projected onto the projection area PA. The projection optical system PL includes the quarter wave plate 41, the polarizing beam splitter PBS, the projection optical system PL2, and the projection optical system PL in that order from the incident side of the projected luminous flux EL2 from the mask M. [ (PLM).

The 1/4 wave plate 41 and the polarizing beam splitter PBS are also used as the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share a 1/4 wave plate 41 and a polarization beam splitter (PBS).

As described with reference to FIG. 5A, the projected luminous flux EL2 reflected by the illumination region IR becomes a telecentric luminous flux (principal rays are parallel to each other), and enters the projection optical system PL. The projection luminous flux EL2 that is circularly polarized light reflected by the illumination area IR is converted from circularly polarized light to linearly polarized light (P polarized light) by the quarter wave plate 41 and then transmitted through the polarization beam splitter PBS I will join. The projection luminous flux EL2 incident on the polarizing beam splitter PBS is transmitted through the polarizing beam splitter PBS and is then incident on the projection optical module PLM.

The projection optical module PLM is provided corresponding to the illumination optical module ILM. That is to say, the projection optical module PLM of the first projection optical system PL1 is a projection optical module of the first illumination optical system IL1, ) Onto the first projection area PA1 on the substrate P (upper side). Likewise, the projection optical module PLM of the second to sixth projection optical systems PL2 to PL6 is provided with the second to sixth illumination optical systems IL1 to IL6 which are illuminated by the illumination optical module ILM of the second to sixth illumination optical systems IL2 to IL6. 6 An image of the mask pattern of the illumination areas IR2 to IR6 is projected onto the second to sixth projection areas PA2 to PA6 on the substrate P. [

4, the projection optical module PLM includes a first optical system 61 for forming an image of a mask pattern in the illumination area IR on an intermediate image plane (P7) A second optical system 62 for re-coupling at least part of the intermediate image formed by the first optical system 61 to the projection area PA of the substrate P and a projection optical system 62 for projecting And a field stop 63. The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, And an adjusting mechanism (polarization adjusting means) 68.

The first optical system 61 and the second optical system 62 are, for example, a telecentric reflection / refraction optical system in which a Dyson system is modified. The optical axis of the first optical system 61 is substantially orthogonal to the center plane CL thereof (hereinafter referred to as the "second optical axis BX2"). The first optical system 61 includes a first deflecting member 70, a first lens group 71, and a first concave mirror 72. The first biasing member 70 is a triangular prism having a first reflecting surface P3 and a second reflecting surface P4. The first reflecting surface P3 reflects the projected luminous flux EL2 from the polarizing beam splitter PBS and transmits the reflected projected luminous flux EL2 through the first lens group 71 to the first concave mirror 72 as shown in FIG. The second reflective surface P4 is a surface on which the projected luminous flux EL2 reflected by the first concave mirror 72 passes through the first lens group 71 and is incident, (63). The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The first concave mirror 72 is disposed on the concave surface of the first optical system 61 and is set in an optically conjugate relationship with a plurality of point light source images generated by the fly-eye lens 52.

The projected luminous flux EL2 from the polarizing beam splitter PBS is reflected by the first reflecting surface P3 of the first deflecting member 70 and is reflected by the view of the upper half of the first lens group 71 And is incident on the first concave mirror 72. The projection luminous flux EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72 and passes through the visual field in the lower half of the first lens group 71 Is incident on the second reflecting surface (P4) of the first biasing member (70). The projection luminous flux EL2 incident on the second reflection surface P4 is reflected by the second reflection surface P4 and passes through the focus correction optical member 64 and the optical member 65 for image shift , And enters the projection field stop 63.

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA.

The second optical system 62 has the same structure as the first optical system 61 and is provided symmetrically with the first optical system 61 with the intermediate top face P7 interposed therebetween. The second optical system 62 has its optical axis (hereinafter referred to as "third optical axis BX3") substantially orthogonal to the center plane CL and parallel to the second optical axis BX2. The second optical system 62 includes a second deflecting member 80, a second lens group 81, and a second concave mirror 82. The second biasing member 80 has a third reflecting surface P5 and a fourth reflecting surface P6. The third reflecting surface P5 reflects the projected luminous flux EL2 from the projection visual field diaphragm 63 and passes the reflected projected luminous flux EL2 through the second lens group 81 to the second concave mirror 82, respectively. The fourth reflecting surface P6 is a surface on which the projected luminous flux EL2 reflected by the second concave mirror 82 passes through the second lens group 81 and is incident, PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The second concave mirror 82 is disposed in the coplanar plane of the second optical system 62 and is set in an optically conjugate relationship with a plurality of point light source images formed on the first concave mirror 72.

The projected luminous flux EL2 from the projection field stop 63 is reflected by the third reflecting surface P5 of the second deflecting member 80 and passes through the view area of the upper half of the second lens group 81 Is incident on the second concave mirror (82). The projection luminous flux EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82 and passes through the field of view of the lower half of the second lens group 81, Is incident on the fourth reflecting surface (P6) of the reflecting mirror (80). The projection luminous flux EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6 and passes through the optical element 66 for magnification correction and is projected onto the projection area PA. As a result, the image of the mask pattern in the illumination area IR is projected in the projection area PA at the magnification (x1).

The focus correcting optical member 64 is disposed between the first deflecting member 70 and the projection field stop 63. The focus correcting optical member 64 adjusts the focus state of the image of the mask pattern projected on the substrate P (top). The focus correction optical member 64 is, for example, two prism wedge-shaped prisms which are opposed to each other so as to form a transparent flat plate as a whole with the prisms in the opposite direction (in the direction opposite to the X direction in Fig. 4). The pair of prisms are slid in the inclined plane direction without changing the interval between the surfaces facing each other, whereby the thickness of the parallel plate is made variable. As a result, the effective optical path length of the first optical system 61 is finely adjusted, and the focus (focal) state of the image of the mask pattern formed in the intermediate top plane P7 and the projection area PA is finely adjusted .

The optical member 65 for image shifting is disposed between the first deflecting member 70 and the projection field stop 63. The optical member 65 for image shifting adjusts the image of the mask pattern projected on the substrate P so as to be movable in the image plane. The image-shift optical member 65 is composed of a transparent parallel plate glass which can be tilted in the XZ plane of Fig. 4 and a transparent parallel plate glass which is tiltable in the YZ plane of Fig. The image of the mask pattern formed in the intermediate top plane P7 and the projection area PA can be finely shifted in the X and Y directions by adjusting the angular amounts of the two parallel flat glass plates have.

The magnification correction optical member 66 is disposed between the second deflecting member 80 and the substrate P. [ The optical element 66 for magnification correction is composed of, for example, a concave lens, a convex lens and a concave lens arranged coaxially at predetermined intervals, the front and rear concave lenses being fixed, Direction. As a result, the image of the mask pattern formed in the projection area PA is enlarged or reduced by a small amount isotropically while maintaining the telecentric imaging state. The optical axes of the three lens groups constituting the magnification-correcting optical member 66 are inclined in the XZ plane so as to be parallel to the principal ray of the projected luminous flux EL2.

The rotation correcting mechanism 67 slightly rotates the first biasing member 70 about an axis parallel to the Z axis by, for example, an actuator (not shown). The rotation correcting mechanism 67 rotates the first deflecting member 70 to slightly rotate the image of the mask pattern formed on the intermediate top face P7 within the intermediate top face P7 .

The polarization adjusting mechanism 68 adjusts the polarization direction by rotating the quarter wave plate 41 around an axis orthogonal to the plate surface by, for example, an actuator (not shown). The polarization adjusting mechanism 68 can adjust the illuminance of the projected luminous flux EL2 projected onto the projection area PA by rotating the quarter wave plate 41. [

In the projection optical system PL constructed as described above, the projected luminous flux EL2 from the mask M is emitted from the illumination area IR in the direction normal to the mask surface P1, Passes through the polarizing beam splitter (PBS), and is incident on the first optical system (61). The projected luminous flux EL2 incident on the first optical system 61 is reflected by the first reflecting surface (flat mirror) P3 of the first deflecting member 70 of the first optical system 61, (71) and reflected by the first concave mirror (72). The projection luminous flux EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again and is reflected by the second reflection surface (planar mirror) P4 of the first deflecting member 70 And passes through the focus correction optical member 64 and the optical member 65 for image shifting and is incident on the projection field stop 63. The projection luminous flux EL2 that has passed through the projection field stop 63 is reflected by the third reflection surface (flat mirror) P5 of the second deflecting member 80 of the second optical system 62, (81) and reflected by the second concave mirror (82). The projection luminous flux EL2 reflected by the second concave mirror 82 again passes through the second lens group 81 and is reflected by the fourth reflection plane (planar mirror) P6 of the second deflecting member 80 And enters the optical element 66 for magnification correction. The projection luminous flux EL2 emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P and the image of the mask pattern appearing in the illumination area IR (X1) to the projection area PA.

In the present embodiment, the second reflecting surface (flat mirror) P4 of the first deflecting member 70 and the third reflecting surface (flat mirror) P5 of the second deflecting member 80 are arranged on the center plane (Planar mirror) P3 of the first deflecting member 70 and the second deflecting member 80 of the first deflecting member 70 are set to be inclined at 45 degrees with respect to the first deflecting member 70 (or the optical axes BX2 and BX3) (Plane mirror) P6 is set to an angle other than 45 DEG with respect to the center plane CL (or optical axis BX2, BX3). The angle? (Absolute value) with respect to the center plane CL (or the optical axis BX2) of the first reflecting surface P3 of the first deflecting member 70 is represented by a point Q1, an intersection point Q2), and the angle formed by the straight line passing through the first axis AX1 and the center plane CL is defined as [theta] [theta] = 45 [deg.] + [Epsilon] / 2. Similarly, the angle? (Absolute value) with respect to the center plane CL (or the optical axis BX2) of the fourth reflecting surface P6 of the second biasing member 80 is larger than the angle? When the angle between the principal ray of the projected luminous flux EL2 passing through the center point in the projection area PA with respect to the circumferential direction and the center plane CL in the ZX plane is? / 2. &Lt; / RTI &gt;

&Lt; Configuration of illumination optical system and projection optical system &gt;

In addition, with reference to Fig. 6 and Fig. 7 together with Fig. 4, the configuration of the illumination optical system IL and the projection optical system PL of the exposure apparatus U3 according to the first embodiment will be described in detail. Fig.

4 has the illumination optical module ILM and the projection optical system PL has the projection optical module PLM and the illumination optical system IL and the projection optical system PL ) Share a polarization beam splitter (PBS) and a 1/4 wavelength plate 41. The illumination optical module ILM and the polarization beam splitter PBS are provided between the mask M and the projection optical module PLM in the direction in which the center plane CL extends (Z direction). Specifically, the polarization beam splitter PBS is provided between the mask M and the first deflecting member 70 of the projection optical module PLM in the Z direction, and in the X direction, And an illumination optical module (ILM). The illumination optical module ILM is provided between the mask M and the first lens group 71 of the projection optical module PLM in the Z direction and is provided in the X direction with a polarizing beam splitter PBS, And is provided on the opposite side of the center plane CL side.

Here, with reference to Fig. 7, the arrangement area E in which the illumination optical module ILM can be arranged will be described. The arrangement area E in the XZ plane is an area partitioned by the first line L1, the second line L2 and the third line L3. The second line L2 is a principal ray of the projected luminous flux EL2 reflected by the mask M (for example, passing through a point Q1 in Fig. 5A). The first line L1 is a line L1 at the intersection where the principal ray of the projected luminous flux EL2 reflected by the mask M and the mask plane P1 intersect (e.g., point Q1 in Fig. 5A) P1). The third line L3 is a line set parallel to the second optical axis BX2 of the first optical system 61 so as not to interfere spatially with the projection optical module PLM. The illumination optical module ILM is disposed in the arrangement area E surrounded by the first line L1, the second line L2 and the third line L3. When the mask M is a cylinder, the distance between the third line L3 and the first line L1 in the Z direction becomes larger as the distance from the center plane CL is increased, as shown in Fig. 7, L1 can be inclined. Therefore, the installation of the illumination optical module ILM is facilitated.

The arrangement of the illumination optical module ILM is also determined by the incident angle beta of the principal ray of the illumination luminous flux EL1 incident on the polarizing film 93 of the polarizing beam splitter PBS from the illumination optical module ILM . As shown in Fig. 6, the angle formed by the principal ray of the projected luminous flux EL2 reflected by the illumination area IR (passing through the point Q1 in Fig. 5A, for example) . At this time, the illumination optical module ILM is arranged such that the angle of incidence [beta] of the illumination luminous flux EL1 incident on the polarizing film 93 of the polarizing beam splitter PBS is 45 [ (45 DEG +/-? / 2) x 1.2. That is, the angular range of the angle of incidence? Can be set to a value that the optical axis of the illumination optical flux EL1 is physically incident on the mask M and the projection optical module PLM while allowing the illumination luminous flux EL1 to enter the polarizing film 93 of the polarizing beam splitter PBS at a proper incident angle? So that the illumination optical module (ILM) can be arranged so as not to interfere. The angle range of the incidence angle beta is determined in consideration of the angular distribution determined by the numerical aperture NA of the illumination luminous flux EL1, but 45 deg.?? (45 deg.? / 2) is more preferable . The optimum angle of incidence β is obtained by changing the angle of incidence of the polarizing beam splitter PBS in the state that the first optical axis BX1 of the illumination optical module ILM is parallel to the second optical axis BX2 of the projection optical module PLM Is an incident angle when the illumination luminous flux EL1 is incident on the polarizing film 93. [

The polarizing beam splitter PBS is composed of two triangular prisms (for example, made of quartz) 91 and 92 which are sandwiched by a polarizing film 93 interposed therebetween. An incident surface of a prism (first prism) 91 that receives the illumination luminous flux EL1 from the illumination optical module ILM is set perpendicular to the optical axis BX1 of the illumination optical module ILM, EL1 is directed toward the mask M is a line that connects the principal ray of the projected luminous flux EL2 (for example, a line connecting the point Q1 in Fig. 5A and the rotation center axis (first axis) AX1) Lt; / RTI &gt; An injection surface of a prism (second prism) 92 that transmits the projected luminous flux EL2 from the mask M toward the projection optical module PLM through the prism 91 and the polarizing film 93, Is set perpendicular to the principal ray of the projected luminous flux EL2 (for example, a line connecting the point Q1 in Fig. 5A and the rotation center axis AX1). Therefore, the polarization beam splitter PBS is an optical parallel plate having a constant thickness with respect to the projected luminous flux EL2 having the telecentric principal ray.

The illumination optical module ILM is likely to physically interfere with the projection optical module PLM on the side of the polarization beam splitter PBS as shown in Fig. (The first lens) is notched. In the first embodiment, a case where a part of various lenses of the illumination optical module ILM is notched is described, but the present invention is not limited to this configuration. In other words, since the projection optical module PLM is also likely to physically interfere with the illumination optical module ILM on the polarization beam splitter PBS side, various lenses (second lenses) included in the projection optical module PLM, It's okay to cut out a part of. Therefore, it is possible to notch a part of various lenses included in both the illumination optical module ILM and the projection optical module PLM. In general, however, it is simple and preferable to notch a portion of various lenses of the illumination optical module (ILM), because the illumination optical module (ILM) has a lower optical precision required than the projection optical module (PLM) .

In the illumination optical module (ILM), a part of a plurality of relay lenses (56) provided on the polarization beam splitter (PBS) side is notched. The plurality of relay lenses 56 are arranged in order from the incidence side of the illumination luminous flux EL1 through a first relay lens 56a, a second relay lens 56b, a third relay lens 56c, 56d. The fourth relay lens 56d is provided adjacent to the polarizing beam splitter PBS. The third relay lens 56c is provided adjacent to the fourth relay lens 56d. The second relay lens 56b is provided on the third relay lens 56c at a predetermined interval and the second relay lens 56b and the third relay lens 56c are provided between the second relay lens 56b And the first relay lens 56a. The first relay lens 56a is provided adjacent to the second relay lens 56b. The first relay lens 56a and the second relay lens 56b on the far side of the polarizing beam splitter PBS are formed in a circle around the optical axis. On the other hand, the third relay lens 56c and the fourth relay lens 56d closer to the polarizing beam splitter PBS have a shape in which a part of the circular shape is notched.

When the illumination luminous flux EL1 is incident on the third relay lens 56c and the fourth relay lens 56d, the illumination luminous flux EL1 is incident on the third relay lens 56c and the fourth relay lens 56d An incidence region S2 and a non-incidence region S1 in which the illumination luminous flux EL1 is not incident are formed. The third relay lens 56c and the fourth relay lens 56d are formed in a shape in which a part of the circular shape is notched by forming a part of the non-incident area S1 by being defective. Specifically, the third relay lens 56c and the fourth relay lens 56d are formed such that both sides in the orthogonal direction orthogonal to the first optical axis BX1 in the XZ plane are cut in a plane perpendicular to the orthogonal direction have. For this reason, the third relay lens 56c and the fourth relay lens 56d have a substantially elliptical shape, a substantially elliptical shape, a substantially elliptical shape (a small jugular shape) when viewed from above the first optical axis BX1 And the like.

Here, an example of the outer shape of the fourth relay lens 56d closest to the polarization beam splitter PBS in Fig. 4 will be described with reference to Fig. 5B. 5B is a view showing the fourth relay lens 56d from the side of the polarizing beam splitter PBS and showing the illumination light flux EL at the upper and lower portions in the Z direction with the incidence region S2 through which the illumination light flux EL1 passes, Incidence region S1 in which the light-shielding portion EL1 does not pass. The fourth relay lens 56d is made by cutting a portion corresponding to the non-incident area S1 after being manufactured as a circular lens of a predetermined diameter.

The diameter of the circular lens is determined by the size of the illumination area IR on the mask M, the working distance, the numerical aperture NA of the illumination luminous flux EL1, Is determined according to the degree of non-telecentricity of the principal ray of the light beam EL1. In Fig. 5 (b), the light intensity distribution in the illumination region IR (referred to herein as a rectangular shape having the long side in the Y direction centered on the point Q1 through which the optical axis BX1 passes) Pay attention to the corner. And one point of the four corners is FFa, the point FFa in the illumination area IR is divided by the substantially circular partial illumination light beam EL1a of the illumination light beam EL1 passing through the fourth relay lens 56d . The dimension of the circular distribution on the fourth relay lens 56d of the partial illumination light flux EL1a is determined by the working distance (focal distance) and the numerical aperture NA of the illumination light flux EL1.

5A, each principal ray of the illumination luminous flux EL1 on the mask M is in a non-telecentric state in the XZ plane. Therefore, The principal ray of the partial illumination light flux EL1a passing through the point FFa of the first relay lens 56d is shifted by a predetermined amount in the Z direction on the upper side of the fourth relay lens 56d. As described above, the distribution of the partial illumination luminous flux irradiating the respective points at the four corners (and above the outer edge) of the illumination area IR on the fourth relay lens 56d And becomes the illumination luminous flux EL1 distributed in the incidence area S2 on the (upper) relay lens 56d. Therefore, the distribution (spread) on the fourth relay lens 56d of the illumination luminous flux EL1 is obtained in a non-telecentric state in the XZ plane of the illumination luminous flux EL1, The shape and dimensions of the fourth relay lens 56d may be determined so as to cover the area S2 (distribution area of the illumination luminous flux EL1).

The lens 56a and 56b in Fig. 4 are arranged in such a manner as to cover a distribution area of the illumination luminous flux EL1 substantially in the same manner as the fourth relay lens 56d, Can be determined.

Generally, a high-precision lens having power (refracting power) is made by polishing the surface of a circular base material such as optical glass or quartz. However, from the beginning, for example, the incident area S2 determined as shown in FIG. A substantially elliptical shape, a substantially oblong shape, or a substantially oblong shape having a size corresponding to that of the lens surface may be prepared, and the surface of the superposed material may be polished to form a desired lens surface. In this case, a step of cutting a portion corresponding to the non-incident area S1 becomes unnecessary.

&Lt; Polarizing beam splitter &

Next, the configuration of the polarization beam splitter (PBS) provided in the exposure apparatus U3 of the first embodiment will be described with reference to Figs. 6 and 8 to 11. Fig. 8 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the first embodiment. 9 is a diagram showing the configuration around the polarizing film of the polarizing beam splitter of the comparative example according to the first embodiment. 10 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig. 11 is a graph showing transmission characteristics and reflection characteristics of the polarization beam splitter shown in Fig.

6, the polarizing beam splitter PBS includes a first prism 91, a second prism 92, and a polarizing film provided between the first prism 91 and the second prism 92 (93). The first prism 91 and the second prism 92 are made of quartz glass and are triangular prisms different from each other in the XZ plane. The polarization beam splitter PBS is formed into a rectangular shape in the XZ plane by bonding the first prism 91 and the second prism 92 having the triangular shape sandwiching the polarizing film 93 therebetween.

The first prism 91 is a prism on the side where the illumination luminous flux EL1 and the projected luminous flux EL2 are incident. The first prism 91 has a first surface D1 on which the illumination luminous flux EL1 from the illumination optical module ILM is incident and a second surface on which the projected luminous flux EL2 from the mask M is incident D2). The first surface D1 is perpendicular to the principal ray of the illumination luminous flux EL1. The second surface D2 is perpendicular to the principal ray of the projected luminous flux EL2.

The second prism 92 is a prism on the side from which the projected luminous flux EL2 transmitted through the polarizing film 93 is emitted. The second prism 92 has a third surface D3 opposed to the first surface D1 of the first prism 91 and a third surface D2 opposed to the second surface D2 of the first prism 91 And a surface D4. The fourth surface D4 is a surface on which the projected luminous flux EL2 incident on the first prism 91 is transmitted through the polarizing film 93 and is perpendicular to the principal ray of the projected luminous flux EL2, Respectively. At this time, the first surface D1 is opposed to the opposed third surface D3 while the second surface D2 is parallel to the opposed fourth surface D4.

An illumination luminous flux EL1 from the first prism 91 to the second prism 92 is incident on the polarizing film 93. [ The polarizing film 93 reflects the illumination luminous flux EL1 of S polarized light (linearly polarized light) and transmits the projected luminous flux EL2 of P polarized light (linearly polarized light). The polarizing film 93 is formed by laminating a film mainly composed of silicon dioxide (SiO ₂ ) and a film mainly composed of hafnium oxide (HfO ₂ ) in the film thickness direction. Hafnium oxide is a material that absorbs light fluxes as much as quartz, and is a material that is hardly changed by the absorption of light. The polarizing film 93 is a film which becomes a predetermined Brewster angle (Brewster angle)? B. Here, the Brewster angle? B is an angle at which the reflectance of the P polarized light becomes zero.

The Brewster angle? B is calculated from the following equation. Nh is the refractive index of hafnium oxide, nL is the refractive index of silicon dioxide, and ns is the refractive index of the prism (quartz glass).

? B = arcsin ([(nh ² x nL ² ) / {ns ² (nh ² + nL ² )}] ^0.5 )

_{Here, nh = 2.07 (HfO 2)} , nL = 1.47 (SiO 2), when in ns = 1.47 (silica glass), Brewster's angle θB of the polarizing film 93 from the above expressions, is approximately 54.6 °.

However, the refractive indices nh, nL, and ns of the respective materials are not limited to the numerical values uniquely. The refractive index generally changes with respect to the wavelength of use from ultraviolet to visible, and has a certain range. In addition, the refractive index may be changed by adding a small amount to various materials. For example, the refractive index nh of hafnium oxide is in the range of 2.00 to 2.15, and the refractive index nL of silicon dioxide is in the range of 1.45 to 1.48. Also, considering that the refraction changes due to the wavelength of use, the refractive index ns of the prism (quartz glass) also changes. Assuming that the refractive index ns is in the range of 1.45 to 1.48 as in the case of the above SiO ₂ , the Brewster angle? B of the polarizing film 93 derived from the above formula has a range of 52.4 ° to 57.3 °.

Thus, since the refractive indices nh, nL, ns of the respective materials slightly vary depending on the material composition and the wavelength of use, the Brewster angle? B can also be changed. In the following specific example,? B = 54.6 deg.

6, the angle? 2 formed between the polarizing film 93 and the first surface D1 is the same as the angle formed by the illumination light flux (incident angle? 2) incident on the polarizing film 93 The incident angle? 1 of the principal ray of the incident light EL1. That is, the first prism 91 is formed so that the angle? 2 formed by the first surface D1 and the polarizing film 93 is equal to the incident angle? 1 of the principal ray of the illumination luminous flux EL1.

6, the illumination light flux EL1 is reflected by the polarizing film 93 and the reflected light (projected light flux EL2) from the mask M is transmitted through the polarizing film 93 The reflection / transmission characteristics of the illumination luminous flux EL1 and the projection luminous flux EL2 with respect to the polarizing film 93 may be reversed. That is, the illumination luminous flux EL1 may be transmitted through the polarizing film 93, and the reflected light (projected luminous flux EL2) from the mask M may be reflected by the polarizing film 93. [ Such an embodiment will be described later.

As shown in Fig. 8, in the polarizing film 93, the direction in which the first prism 91 and the second prism 92 are connected is in the film thickness direction. The polarizing film 93 has a first film body H1 of silicon dioxide and a second film body H2 of hafnium oxide and the first film body H1 and the second film body H2 are laminated in the film thickness direction have. Specifically, the polarizing film 93 is a periodic layer (periodic layer) in which a plurality of layered bodies H composed of the first film body H1 and the second film body H2 are periodically stacked in the film thickness direction. Here, when the incident angle [theta] 1 of the principal ray of the illumination luminous flux EL1 incident on the polarizing film 93 becomes Brewster angle [theta] B of 54.6 [deg.], The polarizing film 93 rotates the laminate H for 30 cycles Or less. The layered structure H is formed on both sides in the film thickness direction with the first film body H1 sandwiched between the first film body H1 having a thickness of? / 4 with respect to the wavelength? Of the illumination luminous flux EL1 And a pair of second films H2 each having a thickness of? / 8 with respect to the wavelength? Of the illumination luminous flux EL1. A plurality of the layered bodies H thus configured are laminated in the film thickness direction so that each second film body H2 of the layered body H becomes integral with each second film body H2 of the adjacent layered body H, the second film body H2 having a film thickness of? / 4 wavelength is formed. For this reason, the polarizing film 93 becomes a pair of second film bodies H2 each having a film thickness of? / 8 wavelength on both sides in the film thickness direction, and as long as it is a film thickness of? / 8 wavelength The first film body H1 having a film thickness of? / 4 wavelength and the second film body H2 having a film thickness of? / 4 wavelength are alternately arranged between the pair of second film bodies H2. do.

The polarizing film 93 is fixed between the first prism 91 and the second prism 92 by an adhesive or an optical contact. For example, in the polarizing beam splitter (PBS), after the polarizing film 93 is formed on the first prism 91, the second prism 92 is formed on the polarizing film 93 (Upper).

Next, with reference to Fig. 10, transmission characteristics and reflection characteristics of the polarizing beam splitter PBS will be described. 10, the incident angle [theta] 1 of the principal ray of the illumination luminous flux EL1 incident on the polarizing film 93 of the polarizing beam splitter PBS is set to be Brewster angle [theta] B at 54.6 [deg.], And the third (three times) harmonic YAG laser is used as the illumination luminous flux EL1. In the graph shown in Fig. 10, the abscissa has an incident angle (? 1), and the ordinate shows the transmittance and the reflectance. 10, Rs is a reflected light flux of S polarized light incident on the polarizing film 93, Rp is a reflected light flux of P polarized light incident on the polarizing film 93, Ts is a polarizing film 93 , And Tp is a transmitted light flux of P polarized light incident on the polarizing film 93. [

Here, since the polarizing film 93 of the polarizing beam splitter PBS is configured to reflect the S polarized reflected light flux (illumination light flux) and transmit the P-polarized transmitted light flux (projected light flux), the reflected light flux Rs) is high and the transmittance of the transmitted light flux Tp is high. In other words, the polarizing film is excellent in the film characteristic in which the reflectance of the reflected light flux Rp is low and the transmittance of the transmitted light flux Ts is low. 10, the range of the transmittance / reflectance of the polarizing film 93 that can be used optimally is the reflectance of the reflected light flux Rs at the Brewster angle? B of 54.6 占 and the transmittance of the transmitted light flux Tp, Is a range allowing a 5% reduction. That is, since the transmittance / reflectance at the Brewster angle? B is 100%, the reflectance of the reflected light flux Rs and the transmittance of the transmitted light flux Tp are 95% Is the range of the transmittance / reflectance. In the case shown in Fig. 10, the range of the incident angle [theta] 1 is 46.8 [deg.] To 61.4 [deg.] In a range where the reflectance of the reflected light flux Rs and the transmittance of the transmitted light flux Tp are 95%

10, when the incident angle [theta] 1 of the principal ray of the illumination luminous flux EL1 incident on the polarizing film 93 of the polarizing beam splitter PBS is the Brewster angle [theta] B of 54.6 [deg.], The angular range of the incident angle of the illumination luminous flux EL1 to be incident on the polarizing film 93 can be set in the range of 14.6 DEG .

Therefore, the illumination optical module ILM of the exposure apparatus U3 is configured such that the angle range of the incident angle? 1 of the illumination luminous flux EL1 incident on the polarizing film 93 of the polarizing beam splitter PBS is 46.8 degrees or more and 61.4 ° and the illumination luminous flux EL1 can be emitted so that the principal ray of the illumination luminous flux EL1 becomes the Brewster angle [theta] B of 54.6 [deg.].

Next, a polarization beam splitter (PBS) as a comparative example to the polarizing beam splitter (PBS) of the first embodiment shown in Fig. 8 will be described with reference to Fig. The polarization beam splitter PBS as a comparative example has substantially the same configuration as that of the first embodiment and includes a first prism 91, a second prism 92, a first prism 91, And a polarizing film 100 provided between the polarizing films 100 and 92. Since the first prism 91 and the second prism 92 are the same as those in the first embodiment, their descriptions are omitted.

The principal ray of the illumination light flux EL1 incident on the polarizing film 100 becomes a film having an incident angle? 1 of 45 degrees in the polarizing film 100 of the polarizing beam splitter PBS as a comparative example. Specifically, when the principal ray of the illumination luminous flux EL1 incident on the polarizing film 100 becomes an incident angle [theta] l of 45 [deg.], The polarizing film 100 is the same as the film of the first embodiment, The periodic layer has a period from 31 cycles to 40 cycles.

Next, the transmission characteristic and the reflection characteristic of the polarizing beam splitter (PBS) of the comparative example will be described with reference to Fig. 11, the incident angle [theta] 1 of the principal ray of the illumination luminous flux EL1 incident on the polarizing film 100 of the polarizing beam splitter PBS is set to an incident angle of 45 [deg.], And the third (three times) harmonic YAG laser is used as the illumination luminous flux EL1. 11, the abscissas of the abscissa shows the incident angle, the ordinate shows the transmittance / reflectance, Rs the reflected light flux of the S polarized light incident on the polarizing film 100, and Rp the reflected light flux incident on the polarizing film 100 A reflected light flux of P polarized light, Ts is a transmitted light flux of S polarized light incident on the polarizing film 100, and Tp is a transmitted light flux of P polarized light incident on the polarizing film 100.

11, the range of the transmittance / reflectance of the polarizing film 100 that can be used optimally is a range in which the reflectance of the reflected light flux Rs and the transmittance of the transmitted light flux Tp are 95% or more. 11, the range of the incident angle [theta] 1 is not less than 41.9 DEG and not more than 48.7 DEG in a range where the reflectance of the reflected light flux Rs and the transmittance of the transmitted light flux Tp are 95% or more.

11, when the incident angle [theta] 1 of the principal ray of the illumination luminous flux EL1 incident on the polarizing film 100 of the polarizing beam splitter PBS is 45 [deg.], The angular range of the incidence angle 1 of the illumination luminous flux EL1 incident on the polarizing film 100 is set to a range of 6.8 deg. Can be obtained. Therefore, the polarization beam splitter PBS shown in Fig. 8 can broaden the angular range of the incident angle [theta] 1 of the illumination luminous flux EL1 by about two times as compared with the polarization beam splitter PBS shown in Fig.

<Device Manufacturing Method>

Next, a device manufacturing method will be described with reference to Fig. 12 is a flowchart showing a device manufacturing method according to the first embodiment.

In the device manufacturing method shown in Fig. 12, first, functional and performance design of a display panel by self-luminous elements such as organic EL is performed, and necessary circuit patterns and wiring patterns are designed by CAD or the like Step S201). Next, on the basis of a pattern for each of various layers designed by a CAD or the like, a mask M of a required number of layers is produced (step S202). A supply roll FR1 on which a flexible substrate P (a resin film, a metal thin film, a plastic or the like) to be a base material of the display panel is wound is prepared (step S203). The roll-shaped substrate P prepared in this step S203 may be one obtained by modifying the surface of the substrate P if necessary, a base layer (for example, minute concavities and convexities by the imprint method) Sensitive functional film or a transparent film (insulating material) may be laminated in advance.

Next, a backplane layer (backplane layer) composed of an electrode or wiring, an insulating film, a TFT (thin film semiconductor) or the like constituting the display panel device is formed on the substrate P, A light emitting layer (display pixel portion) made of a self-luminous element such as an organic EL is formed so as to be formed (step S204). In this step S204, a conventional photolithography process for exposing a photoresist layer using the exposure apparatus U3 described in each of the above embodiments is also included. However, in place of the photoresist, a photosensitive silane coupling material An exposure process for pattern-exposing the substrate P to form a pattern of hydrophilic and hydrophilic properties on the surface, a pattern exposure of a photosensitive catalyst layer to form patterns (wirings, electrodes, etc.) of the metal film according to electroless plating Or a printing process in which a pattern is drawn by a conductive ink containing silver nanoparticles or the like.

Next, for each display panel device which is continuously produced on a long substrate P on a roll basis, the substrate P is diced or a protective film (not shown) is formed on the surface of each display panel device (Barrier layer), a color filter sheet, or the like are bonded to each other to assemble the device (step S205). Next, an inspection process is performed to determine whether the display panel device functions normally or satisfies the desired performance or characteristics (step S206). In this manner, a display panel (flexible display) can be manufactured.

As described above, the first embodiment differs from the first embodiment in that the illumination optical system IL, which becomes the oblique illumination using the polarizing beam splitter PBS, reflects the illumination luminous flux EL1 by the polarizing beam splitter PBS, The outer shape of the lens element which is shared by the illumination optical system IL and the projection optical system PL and which is close to at least the polarization beam splitter PBS in the illumination optical module ILM, The illumination optical module ILM and the polarization beam splitter PBS can be provided between the mask M and the projection optical module PLM by setting the shape according to the distribution of the illumination optical system EL1. This reduces the physical interference of the illumination optical system IL and the projection optical system PL and in particular the physical interference condition between the illumination optical module ILM and the projection optical module PLM, It is possible to increase the degree of freedom in the arrangement of the projection optical system PL and the polarization beam splitter PBS and the degree of freedom in the arrangement of the projection optical module PLM and the polarization beam splitter PBS and to easily arrange the illumination optical system IL and the projection optical system PL .

The first embodiment differs from the first embodiment in that the fourth relay lens 56d and the third relay lens 56c adjacent to the polarizing beam splitter PBS are arranged such that a portion through which the illumination luminous flux EL1 passes The illumination light flux EL1 is used as the compact illumination optical module ILM and the illumination light flux EL1 is used as the illumination optical flux ILM because the lens shape is substantially free from the portion where the illumination luminous flux EL1 does not pass Of the arrangement of the illumination optical module ILM and the projection optical module PLM while keeping the illumination condition of the illumination area IR (telecentricity, illumination uniformity, etc.) The degree of freedom can be increased.

In the first embodiment, a part of the lens included in the illumination optical module ILM is deflected to reduce the outer shape. However, it is also possible to make a part of the lens included in the projection optical module PLM defective and make the outer shape small. In this case as well, a lens close to the polarizing beam splitter PBS, for example, a part of the lens on the first deflecting member 70 side of the first lens group 71, like the illumination optical module ILM, The outer shape can be reduced.

In the first embodiment, the polarizing film 93 of the polarizing beam splitter PBS is formed by laminating the first film body H1 of silicon dioxide and the second film body H2 of hafnium oxide in the film thickness direction . Therefore, the polarizing film 93 reflects the reflectance of the reflected light flux (illumination light flux) of the S polarized light incident on the polarizing film 93 and the transmittance of the transmitted light flux (projected light flux) of the P polarized light incident on the polarizing film 93 Can be made high. Thus, even when the illumination light beam EL1 having a high energy density and having a wavelength equal to or lower than the i-line enters the polarizing film 93, the polarizing beam splitter PBS is able to reduce the load applied to the polarizing film 93 And can be preferably separated into the reflected light flux and the transmitted light flux.

In the first embodiment, the polarizing film 93 can be formed of a film in which the incident angle? 1 of the principal ray of the illumination light flux EL1 incident on the polarizing film 93 becomes Brewster angle? B of 54.6 占. In other words, by setting the principal ray of the illumination luminous flux EL1 incident on the polarizing film 93 at a Brewster angle? B of 54.6 degrees, the angle range of the incident angle? 1 of the illumination luminous flux EL1 incident on the polarizing film 93 is , 46.8 DEG to 61.4 DEG. Therefore, the angular range of the incident angle [theta] 1 of the illumination luminous flux EL1 incident on the polarizing film 93 can be widened. This makes it possible to increase the numerical aperture NA of the lens provided adjacent to the polarizing beam splitter PBS as the angular range of the incidence angle 1 of the illumination luminous flux EL1 can be widened. Therefore, by using a lens having a large numerical aperture NA, the resolution of the exposure apparatus U3 can be increased, and a fine mask pattern can be exposed to the substrate P.

The Brewster's angle? B of the polarizing film 93 in the first embodiment can be in the range of 52.4 ° to 57.3 ° due to the deviation of the refractive index of the material (film) constituting the polarizing film 93 , The angle range of the incident angle? 1 of the illumination luminous flux EL1 incident on the polarizing film 93 may be set in consideration of the range.

The first embodiment differs from the first embodiment in that the first surface D1 and the third surface D3 of the polarizing beam splitter PBS are opposed to each other and the second surface D2 and the fourth surface D4 are parallel . In the first embodiment, the angle? 2 formed between the first surface D1 and the polarizing film 93 is set to be equal to the incident angle? 1 of the principal ray of the illumination luminous flux EL1 entering the polarizing film 93 can do. The first surface D1 can be made to be a vertical surface with respect to the principal ray of the illumination luminous flux EL1 incident on the first surface D1 and the projected luminous flux EL2 incident on the second surface D2 , The second surface D2 may be a vertical surface. As a result, the polarization beam splitter PBS can suppress the reflection of the illumination luminous flux EL1 on the first surface D1 and the reflection of the projected luminous flux EL2 on the second surface D2 Can be suppressed.

In the first embodiment, the polarizing film 93 to be the periodic layer can be formed by laminating a plurality of predetermined stacked layers H periodically in the film thickness direction. At this time, the polarizing film 93 (Fig. 8) having an incident angle [theta] 1 of the main ray of illumination luminous flux EL1 of 54.6 [deg. (Fig. 9) of the polarizing beam splitter (PBS) in which the polarizing beam splitter (PBS) is at 45 deg., The periodic layer can be reduced. Therefore, the polarizing film 93 shown in Fig. 8 can have a simple structure as compared with the polarizing film 100 shown in Fig. 9 as the number of the periodic layers is small, and the manufacturing cost of the polarizing beam splitter PBS can be reduced have.

In the first embodiment, the polarizing film 93 can be preferably fixed between the first prism 91 and the second prism 92 by an adhesive or an optical contact. In the first embodiment, the polarization beam splitter PBS and the 1/4 wave plate 41 may be integrally fixed by an adhesive or an optical contact. In this case, it is possible to suppress the relative positional deviation between the polarization beam splitter (PBS) and the 1/4 wave plate 41.

In the first embodiment, since the harmonic laser or the excimer laser can be used as the illumination luminous flux EL1, for example, the illumination luminous flux EL1 suitable for the exposure process can be used It becomes possible to use it.

In the first embodiment, since the illuminance of the projection area PA can be adjusted by adjusting the polarization direction of the 1/4 wave plate 41 by the polarization adjustment mechanism 68, the projection areas PA1 To PA6 can be made uniform.

[Second Embodiment]

Next, the exposure apparatus U3 according to the second embodiment will be described with reference to FIG. Only parts different from those of the first embodiment will be described so as to avoid overlapping description, and the same components as those of the first embodiment are denoted by the same reference numerals as in the first embodiment. 13 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the second embodiment. The exposure apparatus U3 according to the first embodiment has a configuration in which the cylindrical reflection type mask M is held by the rotatable mask holding drum 21. The exposure apparatus U3 according to the second embodiment, Like reflective mask MA is held by a movable mask holding mechanism 11. The mask MA is movable in the horizontal direction.

In the exposure apparatus U3 according to the second embodiment, the mask holding mechanism 11 includes a mask stage 110 for holding a planar mask MA, and a mask stage 110 for holding the mask stage 110 perpendicularly to the center plane CL. (Not shown) for performing scanning movement along the X direction within the plane of the wafer W.

Since the mask surface P1 of the mask MA shown in Fig. 13 is a plane substantially parallel to the XY plane, the principal ray of the projected luminous flux EL2 reflected from the mask MA becomes perpendicular to the XY plane. Therefore, the principal ray of the illumination luminous flux EL1 from the illumination optical systems IL1 to IL6 that illuminate the illumination areas IR1 to IR6 on the mask MA is also perpendicular to the XY plane.

When the principal ray of the projected luminous flux EL2 reflected by the mask MA becomes perpendicular to the XY plane, the first line L1 and the second line L2 partition the arrangement region E along the main ray of the projected luminous flux EL2, The line L2 also changes. That is, the second line L2 becomes a direction perpendicular to the XY plane from the intersection point where the main light ray of the mask MA and the projected light flux EL2 intersect, and the first line L1 becomes the direction perpendicular to the XY plane, And becomes a direction parallel to the XY plane from the intersection at which the principal ray of the light flux EL2 intersects. For this reason, the arrangement of the illumination optical module ILM is appropriately changed in accordance with the change of the arrangement area E, and the arrangement of the polarizing beam splitter PBS is appropriately changed in accordance with the arrangement of the illumination optical module ILM .

When the principal ray of the projected luminous flux EL2 reflected from the mask MA is perpendicular to the XY plane, the projection optical flux PL2 of the first optical system 61 of the projection optical module PLM, The one reflecting surface P3 reflects the projected luminous flux EL2 from the polarizing beam splitter PBS and passes the reflected projected luminous flux EL2 through the first lens group 71 to the first concave mirror 72 As shown in Fig. Specifically, the first reflecting surface P3 of the first biasing member 70 is set at substantially 45 degrees with respect to the second optical axis BX2 (XY plane).

In the second embodiment, similarly to FIG. 2, from the center point of the illumination area IR1 (and IR3, IR5) on the mask MA in the XZ plane, the illumination area IR2 And IR4 and IR6 in the second projection area PA2 (or PA2 and PA4) from the center point of the projection area PA1 (and PA3 and PA5) on the substrate P along the support surface P2 (And PA4, PA6)) of the first and second electrodes.

In the exposure apparatus U3 in Fig. 13, the subordinate control device 16 controls the moving device (the scanning linear motion motor, the fine motion actuator, etc.) of the mask holding mechanism 11 and the substrate supporting drum 25 The mask stage 110 is driven in synchronization with the rotation of the mask stage 110. In the exposure apparatus U3 in Fig. 13, after the scan exposure is performed by the synchronous movement of the mask MA in the + X direction, the operation (rewinding) of returning the mask MA to the initial position in the -X direction is required . Therefore, when the substrate P is continuously conveyed at a constant speed by continuously rotating the substrate supporting drum 25 at a constant speed, pattern exposure is performed on the substrate P during the rewinding operation of the mask MA And the panel pattern is spatially separated (spaced apart) with respect to the conveying direction of the substrate P. However, since the speed of the substrate P and the speed of the mask MA are considered to be 50 mm / s to 100 mm / s in practice in the scanning exposure, when the mask MA is rewound When the mask stage 110 is driven at the maximum speed of, for example, 500 mm / s, margins in the transport direction between the panel patterns formed on the substrate P can be narrowed.

[Third embodiment]

Next, the exposure apparatus U3 of the third embodiment will be described with reference to Fig. Only the portions different from the first embodiment (or the second embodiment) will be described so as to avoid overlapping substrate, and the same components as those of the first embodiment (or the second embodiment) (Or the second embodiment) are denoted by the same reference numerals. 14 is a diagram showing the configuration of an exposure apparatus (substrate processing apparatus) according to the third embodiment. The exposure apparatus U3 shown in Fig. 14 is a configuration in which reflected light (projected flux of light EL2) from a reflective cylindrical mask M is projected onto a flexible substrate P (Upper), while synchronizing the peripheral velocity by the rotation of the cylindrical mask M and the conveying velocity of the substrate P.

The exposure apparatus U3 according to the third embodiment is an example of an exposure apparatus in which the reflection / transmission characteristics of the illumination luminous flux EL1 and the projection luminous flux EL2 in the polarization beam splitter PBS are reversed. 14, among the relay lenses 56 disposed along the optical axis BX1 of the illumination optical module ILM, at least the relay lens 56 closest to the polarization beam splitter PBS is arranged so that the illumination luminous flux EL1 passes through (Non-incident area S1) is eliminated, spatial interference with the projection optical module PLM is avoided. The extension line of the optical axis BX1 of the illumination optical module ILM intersects with the first axis AX1 (line serving as the rotation center).

The polarizing beam splitter PBS is arranged so that the second surface D2 and the fourth surface D4 parallel to each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, The first surface D1 is disposed so as to be perpendicular to the optical axis BX4 (fourth optical axis) of the projection optical module PLM. The intersection angle of the optical axis BX1 and the optical axis BX4 in the XZ plane is the same as the condition shown in Fig. 6 in front of the polarizing film 93. Herein, the projected luminous flux EL2 is changed to the Brewster angle? B To 57.3 [deg.]).

The polarizing film 93 (wave-front split surface) of the polarizing beam splitter PBS in the present embodiment can be formed by laminating a plurality of the first film body made of silicon dioxide and the second film body made of hafnium oxide in the film thickness direction. Therefore, the polarizing film 93 can make the reflectance of the S-polarized light incident on the polarizing film 93 and the transmittance of the P-polarized light incident on the polarizing film 93 high. Thus, even when the illumination light beam EL1 having a high energy density and having a wavelength equal to or lower than the i-line enters the polarizing film 93, the polarizing beam splitter PBS is able to reduce the load applied to the polarizing film 93 And can be preferably separated into a reflected light flux and a transmitted light flux. The polarizing film 93 may have a laminated structure of the first film H1 of silicon dioxide and the second film H2 of hafnium oxide may be a polarizing beam splitter used in the first embodiment or the second embodiment PBS) can be similarly applied.

In the case of the third embodiment, the illumination light flux EL1 of P polarized light enters from the fourth surface D4 of the polarized beam splitter PBS. Therefore, the illumination luminous flux EL1 is transmitted through the polarizing film 93, emitted from the second surface D2, passed through the 1/4 wave plate 41 and converted into circularly polarized light, And is irradiated onto the illumination area IR on the mask surface P1. According to the rotation of the mask M, the projected luminous flux EL2 (circularly polarized light) generated (reflected) from the mask pattern appearing in the illumination area IR is converted into S polarized light by the 1/4 wave plate 41 , And enters the second surface (D2) of the polarizing beam splitter (PBS). The S polarized projected light flux EL2 is reflected by the polarizing film 93 and is emitted from the first surface D1 of the polarizing beam splitter PBS toward the projection optical module PLM.

The principal ray Ls passing through the center (point Q1) of the illumination area IR on the mask M among the projected luminous flux EL2 is incident on the optical axis BX4 of the projection optical module PLM, Is incident on the first lens system G1 of the projection optical module PLM at an eccentric position from the projection optical module PLM. When the spread of projection luminous flux EL2 is small (numerical aperture NA), the polarizing beam splitter PBS is formed by making the shape of the lens system G1 such that a part through which the projected luminous flux EL2 does not substantially pass, A part of the projection optical module PLM (lens system G1) is spaced apart from the cylindrical mask M and a part of the illumination optical module ILM (lens 56) Interference is avoided.

14, the projection optical module PLM is described as a projection optical system of a total refractometer in which the lens system G1 and the lens system G2 are disposed along the optical axis BX4. However, the present invention is not limited to this system, , A convex surface, or a projection optical system of a reflection refraction type in which a plane mirror and a lens are combined. The lens system G1 may be a full refractometer and the lens system G2 may be a refracting refractometer or may be an image of a pattern in an illumination area IR on the mask surface P1, The magnification when forming an image on the projection area PA on the substrate P may be either magnification or reduction other than equal magnification (x1).

14 shows that a substrate supporting member PH supporting the substrate P is a flat surface and an air bearing layer (gas bearing) of about several micrometers is formed between the surface of the substrate supporting member PH and the back surface of the substrate P And a predetermined tension is applied to the substrate P by using a nip type drive roller or the like within a predetermined range including at least the projection area PA of the substrate P so as to be flat A transport mechanism for transporting the substrate P in the longitudinal direction (X direction) is provided. Of course, in the present embodiment as well, the substrate P may be rolled around a part of a cylindrical body such as the substrate supporting drum 25 shown in Fig. 2.

The exposure unit composed of the illumination optical module ILM, the polarization beam splitter PBS, the 1/4 wave plate 41 and the projection optical module PLM as shown in Fig. A plurality of mirrors are provided in the direction of the axis (first axis) AX1 and the center plane CL including the first axis AX1 which is the center line of rotation of the mask M and parallel to the ZY plane The exposure unit may be disposed symmetrically with respect to the center of the exposure unit.

In the third embodiment described above, by using the polarizing beam splitter (PBS) provided with the polarizing film (multilayer film) 93 by the laminated structure of the hafnium oxide film and the silicon dioxide film, Even in the case of using a laser beam of high luminance in the ultraviolet wavelength region, high-resolution pattern exposure can be stably continued. The polarizing beam splitter (PBS) having the polarizing film 93 can be similarly used in the first and second embodiments.

[Fourth Embodiment]

Next, the exposure apparatus U3 according to the fourth embodiment will be described with reference to Fig. Only the parts different from those of the first embodiment (to third embodiment) will be described so as to avoid overlapping substrate, and the same components as those of the first embodiment (to third embodiment) (To the third embodiment) are denoted by the same reference numerals. Fig. 15 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment. The exposure apparatus U3 according to the first embodiment has a structure in which the cylindrical reflection type mask M is held by the rotatable mask holding drum 21. The exposure apparatus U3 according to the fourth embodiment is, , And a mask MA of a flat plate-shaped reflection type is held by a movable mask holding mechanism 11. [

In the exposure apparatus U3 according to the fourth embodiment, the mask holding mechanism 11 includes a mask stage 110 for holding a planar mask MA, (Not shown) for performing scanning movement along the X direction within the plane of the wafer W.

Since the mask surface P1 of the mask MA in Fig. 15 is substantially parallel to the XY plane, the principal ray of the projected luminous flux EL2 reflected from the mask MA becomes perpendicular to the XY plane. Therefore, the principal ray of the illumination luminous flux EL1 from the illumination optical systems IL1 to IL6 that illuminate the illumination areas IR1 to IR6 on the mask MA is also perpendicular to the XY plane.

When the principal ray of the illumination luminous flux EL1 illuminated on the mask MA becomes perpendicular to the XY plane, the polarization beam splitter PBS splits the incident light IL1 incident on the polarizing film 93 into the incident light (52.4 DEG to 57.3 DEG), and the principal ray of the illumination luminous flux EL1 reflected by the polarizing film 93 is perpendicular to the XY plane. In accordance with the change of the arrangement of the polarizing beam splitter (PBS), the arrangement of the illumination optical module ILM is appropriately changed.

When the principal ray of the projected luminous flux EL2 reflected from the mask MA is perpendicular to the XY plane, the projection optical flux PL2 of the first optical system 61 of the projection optical module PLM, The one reflecting surface P3 reflects the projected luminous flux EL2 from the polarizing beam splitter PBS and passes the reflected projected luminous flux EL2 through the first lens group 71 to the first concave mirror 72 As shown in Fig. Specifically, the first reflecting surface P3 of the first deflecting member 70 is set at substantially 45 degrees with respect to the second optical axis (BX2 (XY plane)).

Also in the fourth embodiment, as shown in Fig. 2, from the center point of the illumination area IR1 (and IR3, IR5) on the mask MA in the XZ plane, the illumination area IR2 And IR4 and IR6 from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the projection area PA2 PA4, and PA6) to the center point of each of the first, second,

The lower control device 16 controls the moving device of the mask holding mechanism 11 (such as the linear scanning linear motor and the fine moving actuator) and the rotation of the substrate supporting drum 25 The mask stage 110 is driven. In the exposure apparatus U3 of Fig. 15, after the scanning exposure is performed by the synchronous movement of the mask MA in the + X direction, an operation of rewinding the mask MA to the initial position in the -X direction (rewinding) is required . Therefore, when the substrate P is continuously conveyed at a constant speed by continuously rotating the substrate supporting drum 25 at a constant speed, no pattern exposure is performed on the substrate P during the rewinding operation of the mask MA, P in the conveying direction of the panel. However, since the speed of the substrate P and the speed of the mask MA are considered to be 50 mm / s to 100 mm / s in practice in the scanning exposure, when the mask MA is rewound When the mask stage 110 is driven at the maximum speed of, for example, 500 mm / s, margins in the transport direction between the panel patterns formed on the substrate P can be narrowed.

[Fifth Embodiment]

Next, the exposure apparatus U3 according to the fifth embodiment will be described with reference to Fig. Only the parts different from those of the first embodiment (to fourth embodiment) will be described so as to avoid overlapping substrate, and the same components as those of the first embodiment (to fourth embodiment) (To fourth embodiment) are denoted by the same reference numerals. 16 is a diagram showing a configuration of an exposure apparatus (substrate processing apparatus) according to the fifth embodiment. The exposure apparatus U3 according to the fifth embodiment is an example of an exposure apparatus in which the reflection / transmission characteristics of the illumination luminous flux EL1 and the projection luminous flux EL2 in the polarization beam splitter PBS are reversed. 16, among the relay lenses 56 disposed along the optical axis BX1 of the illumination optical module ILM, at least the relay lens 56 closest to the polarization beam splitter PBS is arranged so that the illumination luminous flux EL1 passes through (Not shown), thereby avoiding spatial interference with the projection optical module PLM. The extension line of the optical axis BX1 of the illumination optical module ILM intersects with the first axis AX1 (line serving as the rotation center).

The polarizing beam splitter PBS is arranged so that the second surface D2 and the fourth surface D4 parallel to each other are perpendicular to the optical axis BX1 (first optical axis) of the illumination optical module ILM, The first surface D1 is disposed so as to be perpendicular to the optical axis BX4 (fourth optical axis) of the projection optical module PLM. The intersection angle of the optical axis BX1 and the optical axis BX4 in the XZ plane is the same as the condition shown in Fig. 6 before the polarizing film 93. Here, the projected luminous flux EL2 is changed to the Brewster angle? B To 57.3 [deg.]).

In the case of the present embodiment, the illumination light flux EL1 of P polarized light enters from the fourth surface D4 of the polarizing beam splitter PBS. Therefore, the illumination luminous flux EL1 is transmitted through the polarizing film 93, emitted from the second surface D2, passed through the 1/4 wave plate 41 and converted into circularly polarized light, And is irradiated onto the illumination area IR on the mask surface P1. According to the rotation of the mask M, the projected luminous flux EL2 (circularly polarized light) generated (reflected) from the mask pattern appearing in the illumination area IR is converted into S polarized light by the 1/4 wave plate 41 , And enters the second surface (D2) of the polarizing beam splitter (PBS). The S polarized projected light flux EL2 is reflected by the polarizing film 93 and is emitted from the first surface D1 of the polarizing beam splitter PBS toward the projection optical module PLM.

The main ray Ls passing through the center of the illumination area IR on the mask M is projected from the optical axis BX4 of the projection optical module PLM to the eccentric Is incident on the first lens system G1 of the projection optical module PLM at one position. When the projected luminous flux EL2 has a small spread (numerical aperture NA), the portion of the lens system G1 not passing through the projected luminous flux EL2 is notched, Spatial interference can be avoided.

16, the projection optical module PLM is described as a projection optical system of an all refraction system in which the lens system G1 and the lens system G2 are disposed along the optical axis BX4. However, the present invention is not limited to such a system, , A convex surface, or a projection optical system of a reflection refraction type in which a plane mirror and a lens are combined. The lens system G1 may be an all refractometer and the lens system G2 may be a refracting refractometer. An image of a pattern in an illumination area IR on (above) The magnification when forming an image on the projection area PA on the substrate P may be either magnification or reduction other than equal magnification (x1).

16 shows an example in which an air bearing layer (gas bearing) of about several micrometers is formed between the surface of the substrate supporting member PH for supporting the substrate P and the back surface of the substrate P And the substrate P is moved in the longitudinal direction (X direction) while a predetermined tension is given to the substrate P and is flat, within a predetermined range including at least the projection area PA of the substrate P, As shown in Fig. Of course, in the present embodiment as well, the substrate P may be rolled around a part of a cylindrical body such as the substrate supporting drum 25 shown in Fig. 2.

The exposure unit composed of the illumination optical module ILM, the polarization beam splitter PBS, the 1/4 wave plate 41 and the projection optical module PLM as shown in Fig. When a plurality of gratings are provided in the direction of the axis (first axis) AX1 and are multiplexed, the center plane CL including the first axis AX1 as the center line of rotation of the mask M and parallel to the ZY plane The exposure unit may be disposed symmetrically with respect to the center of the exposure unit.

Even in the exposure apparatus U3 as in the fifth embodiment described above, the use of a polarizing beam splitter (PBS) provided with a polarizing film (multilayer film) 93 by a lamination structure of a hafnium oxide film and a silicon dioxide film , High-resolution pattern exposure can be stably continued even when high-intensity laser light in the ultraviolet wavelength range is used as the illumination luminous flux EL1.

In the exposure apparatus U3 described in each of the above embodiments, the mask M in which a predetermined mask pattern is fixed in a plane shape or a cylindrical shape is used. However, in the apparatus for projecting and exposing a variable mask pattern, for example, The same can be used as the beam splitter of the exposure apparatus without a mask disclosed in Japanese Patent No. 4223036.

The maskless exposure apparatus includes a programmable mirror array for receiving illumination light for exposure reflected from a beam splitter, and a beam (reflected beam) patterned in the mirror array to a beam splitter and a projection system (Not shown), and projecting the image onto the substrate. When a polarization beam splitter (PBS) as shown in Fig. 8 is used as the beam splitter of the maskless exposure apparatus, high-resolution pattern exposure can be stably performed even when laser light of high luminance in the ultraviolet wavelength region is used as illumination light I can continue.

The polarizing beam splitter PBS used in each of the foregoing embodiments is formed by repeating a polarizing film 93 in which a film mainly composed of silicon dioxide (SiO ₂ ) and a film mainly composed of hafnium oxide (HfO ₂ ) Layer structure, but other materials may be used. For example, similar to the quartz or silicon dioxide (SiO2), a low refractive index with respect to ultraviolet light of wavelength of 355nm, Chemistry of fluorine high-resistance material for the ultraviolet laser light magnesium (MgF ₂₎ may be also used. In addition, as with the hafnium oxide (HfO2), a high refractive index with respect to wavelength ultraviolet light in the vicinity of 355nm, it can be used an ultraviolet laser of zirconium oxide with high resistance material for the light (ZrO _2). Here, the results of simulating the characteristics of the polarizing film 93 capable of changing the combination of these materials will be described with reference to Figs. 17 to 22 below.

17 shows the structure of the polarizing film 93 when a film of hafnium oxide (HfO ₂ ) is used as a material having a high refractive index and a film made of magnesium fluoride (MgF ₂ ) is used as a material having a low refractive index. . When the refractive index nh of hafnium oxide is 2.07, the refractive index nL of magnesium fluoride is 1.40, and the refractive index ns of the prism (quartz glass) is 1.47, the Brewster's angle?

is approximately 52.1 degrees from? B = arcsin ([(nh ² x nL ² ) / {ns ² (nh ² + nL ² )}] ^0.5 ).

Here, a polarizing film 93 obtained by laminating a film of hafnium oxide having a thickness of 22.8 nm on the upper and lower surfaces of a magnesium fluoride film having a thickness of 78.6 nm as a periodic layer and laminating it for 21 cycles (minutes) Is provided between the bonding surfaces of the prism 91 and the second prism 92. In the polarizing beam splitter (PBS) provided with the polarizing film 93 shown in Fig. 17, as a result of the simulation, optical characteristics as shown in Fig. 18 were obtained. When the wavelength of the illumination light in the simulation is 355 nm, the incident angle [theta] 1 at which the reflectance Rp with respect to the P-polarized light becomes 5% or less (the transmittance Tp becomes 95% or more) becomes 43.5 or more and the reflectance The incident angle [theta] 1 at which Rs becomes 95% or more (transmittance Ts is 5% or less) becomes 59.5 or less. In the case of this example as well, good polarization separation characteristics can be obtained in the range of about 15 degrees from -8.6 DEG to + 7.4 DEG with respect to the Brewster angle &amp;thetas; B (52.1 DEG).

19 shows the structure of the polarizing film 93 when a film of zirconium oxide (ZrO ₂ ) is used as a material having a high refractive index and a film made of silicon dioxide (SiO ₂ ) is used as a material having a low refractive index. . When the refractive index nh of zirconium oxide is 2.12, the refractive index nL of silicon dioxide is 1.47, and the refractive index ns of the prism (quartz glass) is 1.47, the Brewster angle? B becomes about 55.2 占 from the above formula.

Here, a polarizing film 93 obtained by laminating a film of zirconium oxide having a thickness of 20.2 nm on the upper and lower surfaces of a silicon dioxide film having a thickness of 88.2 nm as a periodic layer, and laminating it for 21 cycles, (91) and the second prism (92). In the polarization beam splitter (PBS) provided with the polarizing film 93 shown in Fig. 19, as a result of the simulation, optical characteristics as shown in Fig. 20 were obtained. When the wavelength of the illumination light in the simulation image is 355 nm, the incident angle [theta] 1 at which the reflectance Rp with respect to the P polarized light becomes 5% or less (the transmittance Tp becomes 95% or more) becomes 47.7 [deg.] And the reflectance Rs Is equal to or more than 95% (transmittance Ts is 5% or less) becomes 64.1 degrees. In the case of this example as well, good polarization separation characteristics can be obtained in a range of about 16.4 deg. To -7.5 deg. To + 8.9 deg. With respect to the Brewster angle? B (55.2 deg.).

21 shows the configuration of the polarizing film 93 when a film of zirconium oxide (ZrO ₂ ) is used as a material having a high refractive index and a film made of magnesium fluoride (MgF ₂ ) is used as a material having a low refractive index Fig. When the refractive index nh of zirconium oxide is 2.12, the refractive index nL of magnesium fluoride is 1.40, and the refractive index ns of the prism (quartz glass) is 1.47, the Brewster angle? B becomes about 52.6 占 from the above formula.

Here, a polarizing film 93 obtained by laminating a film of zirconium oxide having a thickness of 22.1 nm on the upper and lower surfaces of a magnesium fluoride film having a thickness of 77.3 nm as a periodic layer and laminating it for 21 cycles (minutes) Is provided between the bonding surfaces of the prism 91 and the second prism 92. In the polarization beam splitter (PBS) provided with the polarizing film 93 shown in Fig. 21, as a result of the simulation, optical characteristics as shown in Fig. 22 were obtained. When the wavelength of the illumination light in the simulation image is 355 nm, the incident angle [theta] 1 at which the reflectance Rp with respect to the P polarized light becomes 5% or less (the transmittance Tp becomes 95% or more) becomes 43.1 [deg.] And the reflectance Rs (The transmittance Ts is 5% or less) is 60.7 degrees. In the case of this example, good polarization separation characteristics can be obtained in a range of -9.5 DEG to + 8.1 DEG with respect to Brewster's angle &amp;thetas; B (52.6 DEG) in the range of about 17.6 DEG.

4, the projected luminous flux EL2 reflected by the mask M is projected onto the substrate P along the spread angle? Na limited by the numerical aperture NA of the projection optical system PL of equal magnification Projected. The numerical aperture NA is defined as NA = sin (? Na), and together with the wavelength? Of the illumination luminous flux EL1, resolving power (resolution) RS of the projected image by the projection optical system PL is determined. The numerical aperture of the illumination luminous flux EL1 and the numerical aperture NA on the side of the mask M of the projection optical system PL when the mask M is the similarly flat mask plane P1 shown in Fig. Or less.

For example, when the wavelength? Of the illumination luminous flux EL1 is 355 nm and the process factor k is 0.5, and 3 占 퐉 is obtained as the resolution RS, RS = k? (? / NA) The numerical aperture NA at the mask side of the projection optical system becomes about 0.06 (? Na? 3.4). The numerical aperture of the illumination luminous flux EL1 from the illumination optical system IL is generally slightly smaller than the numerical aperture NA on the side of the mask M of the projection optical system PL.

5A, when the mask surface P1 is a cylindrical mask M formed along a cylindrical surface having a radius Rm, the principal ray of the illumination light flux EL1 passes through the periphery of the cylindrical mask M As for the direction, it spreads at a wider angle. Here, let De be the exposure width in the circumferential direction of the illumination region IR on the mask top (upper side) shown in Fig. 3, with respect to the principal ray of the illumination luminous flux EL1 passing through the point Q1 in Fig. The principal ray of the illumination luminous flux EL1 passing through the most end in the circumferential direction of De is inclined by an angle?

sin?? (De / 2) / (Rm / 2)

Here, when the curvature radius Rm of the cylindrical mask M is 150 mm and the exposure width De is 10 mm, the angle? Becomes about 3.8 占. Further, an angle? Na (about 3.4 占 minutes) of the numerical aperture (minute) of the illumination luminous flux EL1 is added to the principal ray of the illumination luminous flux EL1 passing through the end in the circumferential direction of the exposure width De The spread angle of the illumination luminous flux EL1 to the illumination area IR takes a range of ± (φ + θna) with respect to the main luminous flux of the illumination luminous flux EL1 passing through the point Q1. That is, in the above numerical example, the illumination luminous flux EL1 becomes ± 7.2 °, and the illumination luminous flux EL1 is distributed over the angular range of 14.4 ° with respect to the circumferential direction of the cylindrical mask surface.

As described above, the illumination luminous flux EL1 is set to be incident on the cylindrical mask plane P1 along a relatively large angular range. However, even in such an angular range, the polarizing beam splitter (PBS) of the embodiment shown in Figs. ) And the polarization beam splitter (PBS) of the embodiment shown in Figs. 17 to 22, the illumination light flux EL1 and the projected light flux EL2 can be well polarized and separated.

In the exposure apparatus that the projection optical system PL enlarges and projects the pattern of the mask surface P1 onto the substrate P, the numerical aperture NAm of the projection optical system PL, Is increased by the magnification factor Mp with respect to the numerical aperture NAp on the substrate P side. For example, when the same resolution as that of the resolution RS obtained by the projection optical system of the same magnification is obtained as described above, the numerical aperture NA at the mask side in the projection optical system having the enlargement magnification Mp of 2 times becomes about 0.12, ) Is also increased to ± 6.8 ° (14.6 ° in width). However, the incident angle range in which the polarization beam splitter (PBS) can be preferably polarized separated is about 14.6 deg. In the case of Fig. 10, about 16 deg. In the case of Fig. 18, about 16.4 deg. 22 is about 17.6 占 In any case, since the spreading angle? Na is covered, enlarged projection exposure can be performed with good quality.

As described above, when the mask M is a cylindrical mask, the maximum angle range of the illumination luminous flux EL1 irradiated on the illumination area IR on the mask surface P1 A polarization beam splitter (PBS) having an incident angle range including a Brewster angle? B with a good polarization separation characteristic is selected. The Brewster's angle &amp;thetas; B of the polarization beam splitter PBS shown in Figs. 17 to 22 is 50 degrees or more, and as shown in Fig. 4 and Fig. 6, the optical axis BX1 of the illumination optical system IL, Even when the optical axis BX2 (or BX3) of the projection optical system PL is made parallel to each other, the illumination luminous flux EL1 directed to the cylindrical mask M and the projected luminous flux EL2 reflected from the mask plane Direction can be inclined with respect to the center plane CL, and satisfactory imaging performance can be ensured.

In each of the embodiments described above, the hafnium oxide film or the zirconium oxide film constituting the polarizing film 93 exhibits a high refractive index nh with respect to light in the ultraviolet region (wavelength 400 nm or less), but the refractive index nh (Ratio) nh / ns to the refractive index ns of the substrate (prisms 91 and 92) is 1.3 or more. As the high refractive index material, a film of titanium dioxide (TiO ₂ ), a film of tantalum pentoxide (Ta ₂ O ₅ ) The body is available.

1: Device manufacturing system 2: Substrate supply device
4: Substrate collection device 5: Higher control device
11: mask holding mechanism 12: substrate holding mechanism
13: light source device 16: lower control device
21: mask holding drum 25: substrate holding drum
31: light source 32: light guiding member
41: 1/4 wavelength plate 51: collimator lens
52: fly-eye lens 53: condenser lens
54: Cylindrical lens 55: Illumination field aperture
56a to 56d: relay lens 61: first optical system
62: second optical system 63: projection field aperture
64: focus correction optical member 65: optical member for image shift
66: optical member for magnification correction 67: rotation correction mechanism
68: polarization adjusting mechanism 70: first biasing member
71: first lens group 72: first concave mirror
80: second deflecting member 81: second lens group
82: second concave mirror 91: first prism
92: second prism 93: polarizing film
110; Mask stage (Second embodiment) P: Substrate
FR1: feed roll FR2:
U1 ~ Un: Processor
U3: Exposure device (substrate processing apparatus)
M: mask MA: mask (second embodiment)
AX1: 1st axis AX2: 2nd axis
P1: mask surface P2: support surface
P7: Intermediate surface EL1: Illumination luminous flux
EL2: Projected luminous flux Rm: Curvature radius
Rfa: Curvature radius CL: Center face
PBS: polarized beam splitter IR1 to IR6: illumination area
IL1 to IL6: illumination optical system ILM: illumination optical module
PA1 to PA6: projection areas PL1 to PL6: projection optical system
PLM: projection optical module BX1: first optical axis
BX2 second optical axis BX3: third optical axis
D1: a first side of the polarizing beam splitter (PBS)
D2: the second surface of the polarizing beam splitter (PBS)
D3: Third surface of polarizing beam splitter (PBS)
D4: Fourth face of polarizing beam splitter (PBS)
?: Angle? 1 (?): Angle of incidence
θB: Brewster's angle S1: non-incident area
S2: incident area H:
H1: first membrane H2: second membrane

Claims (20)

A first prism,
A second prism having a surface opposed to one surface of the first prism;
In order to separate an incident light flux (light flux) from the first prism toward the second prism into a reflected light flux reflected toward the first prism side or a transmitted light flux transmitted to the second prism side depending on the polarization state, And a polarizing film provided on an opposing division surface between the first prism and the second prism and including a first film body containing silicon dioxide and a second film body containing hafnium oxide laminated in the film thickness direction ,
The polarizing film is a periodic layer (periodic layer) in which a plurality of layers are laminated in the film thickness direction,
The layered structure may comprise:
The first film body according to silicon dioxide having a thickness of? / 4 with respect to the wavelength? Of the incident light flux,
And the second film body is provided on both sides in the film thickness direction with the first film interposed therebetween, and the hafnium oxide film having a thickness of? / 8 with respect to the wavelength? Of the incident light flux. The method according to claim 1,
Wherein the polarizing film is a film which becomes a Brewster angle (Brewster angle) of 52.4 DEG to 57.3 DEG. The method of claim 2,
The first prism has a first surface on which the incident light flux enters and a second surface on which the reflected light flux reflected by the polarizing film exits,
The second prism has a third surface opposed to the first surface in non-parallel relationship and a fourth surface opposite to the second surface in parallel,
When viewed in a plane orthogonal to the division plane on which the polarizing film is provided,
Wherein the first surface is set to a vertical plane orthogonal to the principal ray passing through the center of the incident incident light flux,
And said second surface is set to a vertical plane orthogonal to a principal ray passing through a center of said reflected light flux to be emitted. The method of claim 3,
Wherein an angle formed by the first surface and the dividing surface provided with the polarizing film is set to be equal to an incident angle of a principal ray passing through the center of the incident light flux incident on the polarizing film. The method according to any one of claims 1 to 4,
Wherein the polarizing film is fixed between the first prism and the second prism by an adhesive or an optical contact. An exposure apparatus using the polarizing beam splitter according to any one of claims 1 to 4,
A mask holding member for holding a reflection type mask,
An illumination optical module for guiding the illumination luminous flux to the mask,
A projection optical module for projecting the projection luminous flux obtained by reflecting the illumination luminous flux by the mask onto the object,
A polarizing beam splitter disposed between the illumination optical module and the mask and disposed between the mask and the projection optical module;
An incident angle of the illumination luminous flux incident on the polarizing film of the polarization beam splitter is set to a predetermined angle range including a Brewster angle of 52.4 DEG to 57.3 DEG,
Wherein the polarizing beam splitter polarizes the illumination luminous flux from the polarizing beam splitter so that the polarizing beam splitter reflects the illumination luminous flux toward the mask and transmits the projection luminous flux toward the projection optical module And further polarizes the projected light flux from the mask. The method of claim 6,
Wherein the predetermined angle range is set to 41.5 DEG to 61.4 DEG. The method of claim 6,
Wherein the illumination luminous flux has a wavelength equal to or less than an i-line. The method of claim 6,
Wherein the illumination luminous flux is a harmonic laser. The method of claim 6,
Wherein the illumination luminous flux is an excimer laser. The method of claim 6,
Wherein the illumination luminous flux illuminated to the mask from the illumination optical module is set such that the projected luminous flux reflected by the mask becomes telecentric. The method of claim 6,
Wherein the polarizing beam splitter and the wave plate are fixed by an adhesive or an optical contact. The method of claim 6,
Wherein the plurality of illumination optical modules guide the illumination luminous flux to the plurality of illumination areas, and the plurality of illumination optical modules guide the illumination luminous flux to the plurality of illumination areas,
Wherein a plurality of projection optical modules are provided corresponding to the plurality of illumination optical modules, and the plurality of projection optical modules are configured to project the plurality of projected luminous fluxes from the plurality of illumination areas onto the object To the plurality of projection areas,
Wherein the polarizing beam splitter and the wave plate are provided so as to correspond to the plurality of illumination optical modules and the plurality of projection optical modules,
And polarizing adjustment means for adjusting the polarization directions of the plurality of wave plates respectively. An exposure apparatus using the polarizing beam splitter according to any one of claims 1 to 4,
A mask holding member for holding a reflection type mask,
An illumination optical module for guiding the illumination luminous flux to the mask,
A projection optical module for projecting the projection luminous flux obtained by reflecting the illumination luminous flux by the mask onto the object,
A polarizing beam splitter disposed between the illumination optical module and the mask and disposed between the mask and the projection optical module;
An incident angle of the projected light flux incident on the polarizing film of the polarizing beam splitter is set to a predetermined angle range including a Brewster angle of 52.4 DEG to 57.3 DEG,
Wherein the polarizing beam splitter polarizes the illumination luminous flux from the polarizing beam splitter so that the polarizing beam splitter transmits the illumination luminous flux toward the mask and reflects the projection luminous flux toward the projection optical module And further polarizes the projected light flux from the mask. delete delete delete delete delete delete

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