WO2014073165A1 - 単結晶製造装置 - Google Patents

単結晶製造装置 Download PDF

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Publication number
WO2014073165A1
WO2014073165A1 PCT/JP2013/006075 JP2013006075W WO2014073165A1 WO 2014073165 A1 WO2014073165 A1 WO 2014073165A1 JP 2013006075 W JP2013006075 W JP 2013006075W WO 2014073165 A1 WO2014073165 A1 WO 2014073165A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
crucible
heat shield
melt
cylindrical heat
Prior art date
Application number
PCT/JP2013/006075
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
清隆 高野
道明 小田
茂丸 前田
Original Assignee
信越半導体株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Publication of WO2014073165A1 publication Critical patent/WO2014073165A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Definitions

  • the present invention provides a sapphire single crystal from a melt obtained by heating and melting a raw material in a crucible mainly composed of tungsten or molybdenum or tungsten and molybdenum by the CZ method.
  • a pulling device comprising a resistance heater that surrounds the crucible and heats the raw material in the crucible, and a main chamber in which the crucible is arranged, and the melt in the crucible is placed above the crucible from above.
  • the outer diameter of the lower end is smaller than the inner diameter of the crucible, and the inner diameter of the lower end is larger than the target diameter of the sapphire single crystal to be pulled up.
  • An apparatus for producing a single crystal is provided.
  • the cylindrical heat shield is fixed to an inner peripheral end of a ring-shaped flat plate disposed above the resistance heater.
  • a ring-shaped flat plate shields the radiant heat upward of the resistance heater, improves the thermal efficiency, and more effectively suppresses the radiant heat directly hitting the side surface of the pulled single crystal. It becomes.
  • the crucible 14 may contract by repeating the heat cycle. Therefore, as described above, the outer diameter of the lower end of the tubular heat shield 23 is defined by the regulation of the crucible 14. By making it smaller than the inner diameter by 10 mm or more, it is possible to ensure that the crucible 14 is not contacted.
  • the straight portion on the inner surface may be tapered. In this case, it is appropriate that the specified inner diameter is the minimum inner diameter of the straight portion.
  • the diameter control of the sapphire single crystal 17 is generally performed based on the crystal weight. However, in the case of a transparent crystal such as sapphire, the growth interface tends to be convex on the melt side.
  • the material of the cylindrical heat shield 23 is preferably a high-purity-treated isotropic graphite, or a material containing at least one of tungsten, molybdenum, and tantalum as a main component. Since the melting point of alumina is as high as 2050 ° C., the cylindrical heat shield 23 positioned immediately above the melt 15 requires a material having a melting point higher than that, and isotropic graphite or Refractory metals such as tungsten, molybdenum and tantalum are preferred.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PCT/JP2013/006075 2012-11-07 2013-10-11 単結晶製造装置 WO2014073165A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-245562 2012-11-07
JP2012245562A JP2014094842A (ja) 2012-11-07 2012-11-07 単結晶製造装置

Publications (1)

Publication Number Publication Date
WO2014073165A1 true WO2014073165A1 (ja) 2014-05-15

Family

ID=50684291

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/006075 WO2014073165A1 (ja) 2012-11-07 2013-10-11 単結晶製造装置

Country Status (3)

Country Link
JP (1) JP2014094842A (zh)
TW (1) TW201428146A (zh)
WO (1) WO2014073165A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6060349B1 (ja) * 2016-02-25 2017-01-18 並木精密宝石株式会社 サファイア単結晶部材製造装置およびサファイア単結晶部材の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08259369A (ja) * 1995-03-24 1996-10-08 Res Dev Corp Of Japan 結晶引上げ装置
JPH08319190A (ja) * 1995-05-22 1996-12-03 Sumitomo Metal Ind Ltd 熱遮蔽体
WO2004083496A1 (ja) * 2003-02-25 2004-09-30 Sumitomo Mitsubishi Silicon Corporation シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法
JP2010501466A (ja) * 2006-09-01 2010-01-21 オクメティック オサケユフティオ ユルキネン 結晶製造
JP2012101995A (ja) * 2010-11-15 2012-05-31 Sumitomo Metal Fine Technology Co Ltd サファイア製造装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08259369A (ja) * 1995-03-24 1996-10-08 Res Dev Corp Of Japan 結晶引上げ装置
JPH08319190A (ja) * 1995-05-22 1996-12-03 Sumitomo Metal Ind Ltd 熱遮蔽体
WO2004083496A1 (ja) * 2003-02-25 2004-09-30 Sumitomo Mitsubishi Silicon Corporation シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法
JP2010501466A (ja) * 2006-09-01 2010-01-21 オクメティック オサケユフティオ ユルキネン 結晶製造
JP2012101995A (ja) * 2010-11-15 2012-05-31 Sumitomo Metal Fine Technology Co Ltd サファイア製造装置

Also Published As

Publication number Publication date
JP2014094842A (ja) 2014-05-22
TW201428146A (zh) 2014-07-16

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